JP2006035247A - Laser heating apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a laser heating apparatus that can improve soldering efficiency. <P>SOLUTION: The apparatus is equipped with a watt class one-chip semiconductor laser 9 provided with an emitting part 8 for emitting a laser beam L around the optical axis center 7 and an aspherical lens 10 arranged around the optical axis center 7 in front of the watt class one-chip semiconductor laser 9. An F value is varied by changing a distance L1 from the emitting part 8 to the focal position N of the aspherical lens 10 and a distance L2 from the focal position N of the aspherical lens 10 to a light collecting part M. Using the aspherical lens 10 of this F value, the width in the slow direction in the light collecting part M can be varied, which makes the shape of the laser beam L deformable in a desired shape in the light collecting part M; thus, the soldering efficiency can be improved. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a laser heating apparatus that condenses laser light emitted from, for example, a semiconductor laser and performs heat treatment such as soldering, resin bonding, and welding with the collected laser light.

Conventionally, there is a laser heating device as a device for performing a non-contact heat treatment using a laser beam, which is disclosed in Patent Document 1, for example.
This laser heating facility (laser heating device) includes a laser diode module (semiconductor laser array) in which a plurality of laser diodes are stacked, a power supply for supplying power to the laser diode module, and a plurality of laser diodes including the laser diode module. The first optical system (collimating lens) that collimates the emitted laser light and the second optical system (condensing lens) that condenses the collimated laser light.

With this configuration, the laser light emitted from the laser diode is collimated by the collimator lens, and the collimated laser light is collected by the condenser lens.
In this way, heat treatment such as soldering or welding can be performed on the object to be heated placed at the focal point by the focused laser beam.
JP 2002-9388 A

  However, according to the configuration of the above conventional laser heating equipment (laser heating device), a plurality of laser beams emitted from the laser diode module are condensed into a long line by the condenser lens, and are actually resin-bonded or metal-bonded. Since it could not be transformed into the shape necessary for performing heating, it was not possible to cope with heated objects having various sizes and shapes, and heating such as soldering or welding performed on the heated objects Processing takes time and there is a problem that the efficiency of soldering is lowered.

  Accordingly, an object of the present invention is to provide a laser heating apparatus capable of improving the efficiency of soldering by deforming the shape of a laser beam condensing portion into a desired shape.

  In order to achieve the above object, a laser heating apparatus according to claim 1 of the present invention is a laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more, and having a work distance of 50 to 500 μm. A watt-class one-chip semiconductor laser light source of 1 W or more having an emission part that emits a laser beam centered on the optical axis center, The first light emitted from the watt-class one-chip semiconductor laser light source is disposed in front of the class-one one-chip semiconductor laser light source, centered on the optical axis center, has an F value of F4 to F9 and a numerical aperture of 0.3 or more. An aspherical lens for condensing the laser light in the direction, and the first direction and scanning direction of the watt-class one-chip semiconductor laser By utilizing the astigmatic difference in the row direction, the shape of the laser beam in the laser beam condensing unit is changed to a desired shape.

  A laser heating apparatus according to a second aspect is the invention according to the first aspect, wherein the watt-class one-chip semiconductor laser light source of 3 W or more with a slow direction emission width of 100 μm and an F value of F7 to F9 The position of the aspherical lens is adjusted on the optical axis center so that the shape of the laser light in the condensing unit is set to a condensing width of 300 μm or more in the slow direction. It is a feature.

  The laser heating apparatus according to claim 3 is a laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more, and a light emission width in a slow direction of 50 to 500 μm, and 0.5 A watt-class one-chip semiconductor laser light source of 1 W or more having an emission part that emits laser light with an optical axis center as the center, and a forward direction of the watt-class one-chip semiconductor laser light source; A first non-collimating laser beam emitted from the watt-class one-chip semiconductor laser light source is arranged around the optical axis center and has an F value of F4 to F9 and a numerical aperture of 0.3 or more. A spherical lens and a first aspherical lens are arranged in front of the optical axis center and have an F value of F10 to F5. And a second aspheric lens that condenses the laser light in the first direction collimated by the first aspheric lens and collimates the laser light in the slow direction. .

  Furthermore, the laser heating apparatus according to claim 4 is a laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more, and a light emission width in a slow direction of 50 to 500 μm, and 0.5 A watt-class one-chip semiconductor laser light source of 1 W or more having an emission part that emits laser light with an optical axis center as the center, and a forward direction of the watt-class one-chip semiconductor laser light source; An aspherical lens that is arranged around the optical axis center, has an F value of F4 to F9, has a numerical aperture of 0.3 or more, and collimates laser light emitted from the watt-class one-chip semiconductor laser light source in the first direction. And the center of the optical axis is arranged in front of the aspheric lens, and the F value is F10 to F50. A cylindrical lens for condensing laser light in the fast direction collimated by the aspheric lens and collimating the laser light in the slow direction is provided.

  In addition, the laser heating apparatus according to claim 5 is a laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more, and a light emission width in a slow direction of 50 to 500 μm, and 0.5 A first watt-class one-chip semiconductor laser light source of 1 W or more having an emission part that emits laser light around the first optical axis center, and is orthogonal to the first optical axis center. 1 W or more having an emission part that emits laser light around the second optical axis center, and is formed in a slow direction emission width of 50 to 500 μm and a first direction emission width of 0.5 to 5 μm. A second watt-class one-chip semiconductor laser light source and a first watt-class one-chip semiconductor laser light source disposed in front of the first watt-class one-chip semiconductor laser light source with the first optical axis center as a center. A first aspherical lens for collimating the laser light emitted from the first watt-class one-chip semiconductor laser light source, and the second optical axis center in front of the second watt-class one-chip semiconductor laser light source. A second aspherical lens for collimating the laser light emitted from the second watt-class one-chip semiconductor laser light source; and the first optical axis in front of the first aspherical lens and the second aspherical lens. A prism that is arranged around the intersection of the center and the second optical axis center, reflects the laser light emitted from the second watt-class one-chip semiconductor laser light source, and a first optical axis center in front of the prism. A condensing lens disposed at the center for condensing the laser light from the prism, and the first watt-class one-chip semiconductor is provided in the condensing portion of the laser light; The laser light emitted from the body laser light source and the laser light emitted from the second watt-class one-chip semiconductor laser light source are condensed into a cross shape.

  The laser heating apparatus according to claim 6 is a laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more, and a light emission width in a slow direction of 50 to 500 μm, and 0.5 A first watt-class one-chip semiconductor laser light source of 1 W or more having an emission part that emits laser light around the first optical axis center, and is orthogonal to the first optical axis center. 1 W or more having an emission part that emits laser light around the second optical axis center, and is formed in a slow direction emission width of 50 to 500 μm and a first direction emission width of 0.5 to 5 μm. Second watt class one-chip semiconductor laser light source, first watt class one-chip semiconductor laser light source, and second watt class one-chip semiconductor laser light The laser beam emitted from the first watt-class one-chip semiconductor laser light source and the second watt-class one-chip are arranged in front of the center of the intersection of the first optical axis center and the second optical axis center. A prism for adding laser light emitted from a semiconductor laser light source; and an aspherical lens that is arranged in front of the prism with a first optical axis center as a center and condenses the laser light added by the prism; The laser beam is condensed in a cross shape by the laser beam emitted from the first watt-class one-chip semiconductor laser light source and the laser beam emitted from the second watt-class one-chip semiconductor laser light source. It is characterized by.

  According to a seventh aspect of the present invention, there is provided the laser heating apparatus according to the sixth aspect, wherein a distance from the emitting portion of the first watt class one-chip semiconductor laser light source to the prism is a first distance, and the first In the laser beam condensing unit, the distance from the emission part of the two-watt class one-chip semiconductor laser light source to the prism is a second distance, and the magnitudes of the first distance and the second distance are respectively changed. It is characterized by forming a desired cross shape.

  Further, the laser heating apparatus according to claim 8 is the invention according to claim 6, wherein the first watt-class one-chip semiconductor laser on the optical axis center is set to a predetermined F value of the aspheric lens. The distance from the light emitting part to the aspheric lens is adjusted, and the aspherical surface is disposed between the aspherical lens and the condensing part disposed at a position where the distance is adjusted around the optical axis center. The first cylindrical lens disposed on the lens side and the aspherical lens disposed at a position where the distance is adjusted with the optical axis center as the center, and the light condensing unit side. And adjusting the position of the first cylindrical lens and the second cylindrical lens on the optical axis center to thereby adjust the first cylindrical lens and the second cylindrical lens. It is obtained characterized in that it is changing the laser light shaped into a desired shape.

  In addition, the laser heating apparatus according to claim 9 is a laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more, and a light emission width in a slow direction of 50 to 500 μm, and 0.5 A watt-class one-chip semiconductor laser light source of 1 watt or more, which has a plurality of emitting portions in the vertical direction and is formed with a light emission width of ˜5 μm in the first direction and emits laser light around the optical axis center; A plurality of fast lenses that are arranged around the respective optical axis centers in front of the respective emission portions of the laser light source and collect laser light in the first direction emitted from the respective emission portions, and around the optical axis center The watt-class one-chip semiconductor laser light source and the laser beam condensing unit are arranged at a location located substantially in the center. A first cylindrical lens for condensing laser light in the slow direction emitted from each emitting portion of the high-class one-chip semiconductor laser light source is provided.

  A laser heating apparatus according to a tenth aspect is the invention according to the ninth aspect, wherein the laser heating apparatus is disposed between the fast lens and the first cylindrical lens with the optical axis center as a center. A second cylindrical lens having an F value larger than that of the cylindrical lens is provided, and by adjusting the position of the second cylindrical lens on the optical axis center, the shape of the laser beam in the condensing unit is changed to a desired shape. It is characterized by that.

  The laser heating apparatus according to claim 11 is a laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more, and a light emission width in a slow direction of 50 to 500 μm, and 0.5 1 W or more formed in a first direction light emission width of ˜5 μm, having an emission part for emitting laser light around the optical axis center, a plurality of emission parts arranged in the front-rear direction and at least one line arranged in the left-right direction The watt-class one-chip semiconductor laser light source and the optical axis center of each watt-class one-chip semiconductor laser light source are arranged around the optical axis center, respectively, and collimate laser light in the first direction emitted from each watt-class one-chip semiconductor laser light source. A plurality of aspherical lenses, and a laser beam for adding the laser beams from the respective aspherical lenses. The laser beam adding means and a condenser lens for condensing the laser light added by the laser light adding means are provided.

  Furthermore, the laser heating apparatus according to claim 12 is a laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more, and a light emission width in a slow direction of 50 to 500 μm, and 0.5 A watt-class one-chip semiconductor laser light source of 1 W or more, which is formed in a light emission width in the first direction of ˜5 μm, is arranged in the left-right direction, and has a plurality of emitting portions that emit laser light around the optical axis center; A fast lens arranged in front of a chip semiconductor laser light source and centering on a center line of the watt-class one-chip semiconductor laser light source, and collimating laser light in the first direction respectively emitted from the plurality of emitting portions; and The fast line is arranged in front of the center line. A laser beam adder for adding the laser beams respectively emitted from the plurality of emission units collimated by the laser beam, and the laser beam adder arranged in front of the laser beam adder and centered on the center line. And a condensing lens for condensing the laser beam.

  In addition, the laser heating apparatus according to claim 13 is a laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more, and a light emission width in a slow direction of 50 to 500 μm, and 0.5 A watt-class one-chip semiconductor laser light source of 1 W or more, which is formed in a first direction light emission width of ˜5 μm, is arranged in the left-right direction and the up-down direction, and has a plurality of emitting portions that emit laser light around the optical axis center; Located in front of a watt-class one-chip semiconductor laser light source and centered on the center line of the watt-class one-chip semiconductor laser light source, a plurality of laser beams are provided in the vertical direction, and laser beams in the first direction respectively emitted from the plurality of emitting portions are A fast lens to be collimated, and the center line in front of the fast lens And a laser beam adder for adding the laser beams respectively emitted from the plurality of emission units collimated by the fast lens, and the center line is arranged in front of the laser beam adder. A condensing lens for condensing the laser light added by the laser light adder is provided.

  The laser heating apparatus according to claim 14 is a laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more, and a light emission width in a slow direction of 50 to 500 μm, and 0.5 A watt-class one-chip semiconductor laser light source of 1 W or more, which has a plurality of emitting portions which are formed in a fast direction light emission width of ˜5 μm, are arranged in the vertical direction, and emit laser light around an optical axis center; A lens holding unit for holding an aspherical lens for condensing laser light respectively emitted from a plurality of emission units of a chip semiconductor laser light source, and a reflection adjustment of laser light from the aspherical lens attached to the lens holding unit And a reflector holding unit that reflects the laser light from the aspheric lens, and the reflector. And a tilt adjusting set screw for adjusting the tilt of the reflector mounting table.

  The laser heating apparatus of the present invention changes the F value by changing the distance from the emitting portion to the focal position of the aspheric lens and the distance from the focal position of the aspheric lens to the light collecting portion. By using an aspheric lens, it is possible to change the width in the slow direction at the condensing part, and the shape of the laser beam at the condensing part can be transformed into a desired line shape. Multipoint simultaneous soldering can be performed on a heated portion such as a connector (connector for FPC) or an electronic device, and thus the efficiency of soldering can be improved.

Below, the laser heating apparatus in each embodiment of the present invention will be described with reference to the drawings. A direction in which laser light is emitted from the laser heating device is a forward direction, a direction opposite to the front direction is a rear direction, and a direction perpendicular to the front-rear direction X on the horizontal plane is a left-right direction Y. The vertical direction is Z. Further, the distance (working distance) from the tip of the lens holding part to the light collecting part is defined as a work distance (hereinafter referred to as WD).
(Embodiment 1)
Below, the laser heating apparatus in Embodiment 1 of this invention is demonstrated, referring drawings.

FIG. 1 shows the configuration of the laser heating apparatus according to Embodiment 1 of the present invention.
As shown in FIGS. 1 (a) and 1 (b), a laser heating device 1 that emits a laser beam that dissolves a substance toward a laser beam condensing unit is an alumite-treated aluminum alloy (Al alloy). The holder 2 formed by the holder body 2A formed by the above and the holder cover 2B mounted on the upper part of the holder body 2A, and the heat conduction provided on the left and right side surfaces and the lower surface of the inner surface of the holder body 2A An insulating sheet 3, an indium sheet (hereinafter referred to as an In sheet) 4 provided on the lower surface of the holder cover 2B, and a heat sink (copper block) provided in contact with each of the heat conductive insulating sheet 3 and the In sheet 4 ) 5 and 1 W or more having an emission part 8 that is fixed to the front surface of the heat sink 5 by a fixing screw 6 and emits the laser beam L around the optical axis center 7. A class-one one-chip semiconductor laser (LD) (an example of a watt-class one-chip semiconductor laser light source) 9 and an optical axis center 7 disposed in front of the holder 2, and an emitting portion 8 of the watt-class one-chip semiconductor laser 9 The aspherical lens (aspherical convex lens) 10 for condensing the laser beam L in the first direction emitted from the laser beam L and the aspherical lens 10 are held, and a visible light cut filter 11A is provided at a position located in front of the aspherical lens 10. It is connected to the lens holding portion 11 provided, a positive power supply line 12A connected to the heat sink 5, a first negative power supply line 12B connected to the heat sink 5, and a watt-class one-chip semiconductor laser 9. Built in the power cable 12 having the second negative power line 12C and the heat sink 5, the watt From a thermistor (an example of a temperature sensor) 13A for measuring the temperature of the one-chip semiconductor laser 9, a thermistor cable (an example of a temperature sensor cable) 13 connected to the thermistor 13A, and a watt-class one-chip semiconductor laser 9 Each of the photodiode (optical sensor) 14A for detecting the return light of the emitted laser light L, the photodiode cable (an example of the optical sensor cable) 14 connected to the photodiode 14A, and the holder cover 2B It is provided at the corner in the vertical direction Z, and includes a mounting screw 16 for mounting the holder 2 to the mounting plate 15 or the like. When the cables 12, 13, and 14 are inserted into the holder 2, a black seal material 17 is provided at the insertion portion of the cables 12, 13, and 14 in the holder 2, and the cables 12, 13, and 14 are fixed. Has been.

  Note that the emission portion 8 formed in the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm. The aspheric lens 10 has a numerical aperture NA of 0.3.

  The lens holding unit 11 includes an adjusting unit (not shown), and the position of the aspherical lens 10 on the optical axis center 7 can be adjusted in the front-rear direction by the adjusting unit.

Hereinafter, the operation in the first embodiment will be described with reference to FIG.
As shown in FIG. 2A, the F value of the aspheric lens 10 disposed in the lens holding unit 11 is
F = (L1 × L2) / (L1 + L2) (1)
L1: Distance from the emitting portion 8 to the focal position N of the aspherical lens 10
L2: It can be obtained from the distance from the focal position N of the aspherical lens 10 to the condenser M.

Here, when L1 = 10 mm and L2 = 40 mm, since F = (10 × 40) / (10 + 40) = 8, the aspherical lens 10 of F8 is used.
And when the aspherical lens 10 of F8 is used, the width H2 in the slow direction at the condensing part M is:
H2 = {(L2-F) / F} H1 (2)
H1: It can be obtained from the light emission width in the slow direction at the emitting portion 8. Note that {(L2-F) / F} indicates a magnification.

Here, when H1 = 0.5 mm, H2 = {(40−8) / 8} 0.5 = 4 × 0.5 = 2 mm.
Further, the width h2 in the fast direction in the light condensing part M is 4 μm because it is obtained by multiplying 1 μm, which is the light emission width h1 in the fast direction in the emitting part 8, by the above magnification.

  In this way, the distance L1 from the emitting portion 8 to the focal position N of the aspherical lens 10 and the distance L2 from the focal position N of the aspherical lens 10 to the condensing portion M are adjusted and arranged on the lens holding portion 11. By appropriately determining the F value of the aspherical lens 10 to be formed, the width in the slow direction of the condensing part M formed at a position away from the aspherical lens 10 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more. Since H2 is appropriately changed, the line shape of the laser light L in the light condensing part M is deformed.

  Further, as the watt-class one-chip semiconductor laser 9, a watt-class one-chip semiconductor laser of 3 W or more with a light emission width in the slow direction of 100 μm is used, and the aspheric lens 10 has an aspheric surface with an F value of F7 to F9. By using a lens and adjusting the position of this aspheric lens in the front-rear direction on the optical axis center by the adjusting means of the lens holding unit 11, the shape of the laser beam in the condensing unit M with a WD of 20 mm or more is obtained. The condensing width in the slow direction can be deformed into a line shape or a square shape with 300 μm or more. Further, the position adjustment is performed in the same manner as described above, and defocusing is performed by using aberration in the fast direction and the slow direction, and the aspect ratio of the shape of the laser beam in the condensing unit M (the length in the left-right direction Y and the vertical direction Z) By adjusting the length ratio) or by using the astigmatic difference between the fast direction and the slow direction, the shape of the laser light in the condensing part M can be changed to a round shape or an elliptical shape.

  Further, for example, a collimating lens, a PBS prism, and an aspherical lens (plano-convex lens) having an F value of 25 or more are provided in the lens holding unit 10 in this order from the emission unit 8 centering on the optical axis center 7. If a condensing lens and a CCD camera are provided above the laser beam L in the first direction emitted from the emitting unit 8, it is collimated by a collimating lens, and after passing through a PBS prism, is condensed by an aspheric lens. The At this time, the return light of the laser light L is reflected by the PBS prism and condensed on the CCD camera by the condenser lens. Thereby, the condensing part of the laser beam L can be confirmed with a CCD camera. The collimating lens, the aspherical lens, and the condenser lens are arranged so that the aspherical part of each lens is on the PBS prism side.

  As described above, according to the first embodiment, the distance L1 from the emitting unit 8 to the focal position N of the aspherical lens 10 and the distance L2 from the focal position N of the aspherical lens 10 to the condensing unit M are changed. By changing the F value by using the aspherical lens 10 having this F value, the width H2 in the slow direction in the condensing part M can be changed, and the shape of the laser light L in the condensing part M is desired. Because it can be deformed into the shape of the above, it is easy to perform multi-point simultaneous soldering on heated parts such as flexible printed wiring board connectors (FPC connectors) and electronic devices. Efficiency can be improved.

  Further, according to the first embodiment, since the aspherical lens 10 having a numerical aperture NA of 0.3 is used, the loss is caused, that is, the rate at which the laser light L leaks from the aspherical lens 10 is about 10%. Can be suppressed.

  In the first embodiment, the emission part 8 of the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm. Alternatively, a watt-class one-chip semiconductor laser 9 having a light emission width of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm may be used.

In the first embodiment, the aspherical lens 10 has an F value indicating the lens brightness of F8 and a numerical aperture NA of 0.3, but the F value may be in the range of F4 to F9. The numerical aperture NA may be 0.3 or more.
(Embodiment 2)
Below, the laser heating apparatus in Embodiment 2 of this invention is demonstrated, referring drawings.

  The configuration of the laser heating device in Embodiment 2 of the present invention will be described. The configuration of the laser heating apparatus in the second embodiment is substantially the same as that in the first embodiment, and thus detailed description thereof is omitted, and only a different part, that is, the lens configuration of the lens holding unit will be described. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 3, the lens holding portion (not shown) is disposed in front of the watt-class one-chip semiconductor laser 9 with the optical axis center 7 as the center, and has an F value of F8 and a numerical aperture NA. 0.3, a first aspheric lens 21 that collimates the laser light L emitted from the watt-class one-chip semiconductor laser 9 in the fast direction and the slow direction, and the optical axis center 7 in front of the first aspheric lens 21. A second aspherical lens 22 that is arranged at the center and has an F value of F14.5 and condenses the laser light L in the first direction collimated by the first aspherical lens 21 is provided.

The emission part 8 formed in the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm.
The aspheric lenses 21 and 22 are arranged such that the aspheric surfaces 21A and 22A face each other.

Hereinafter, the operation in the second embodiment will be described with reference to FIG.
First, the combined F value of the first aspheric lens 21 and the second aspheric lens 22 is
F = (F1 × F2) / (F1 + F2-d) (3)
F1: F value of the first aspherical lens 21
F2: F value of the second aspherical lens 22
d: the focal position N1 of the first aspheric lens 21 and the second aspheric lens 22;
Can be obtained from the distance to the focal position N2.

Therefore, when d = 8 mm, F = (8 × 14.5) / (8 + 14.5−8) = 8, so the combined F value of the first aspherical lens 21 and the second aspherical lens 22 is 8
And if this synthetic | combination F value is substituted into following formula (4), the width | variety H2 of the slow direction in the condensing part M will be given by
H2 = {(L2-F) / F} H1 (4)
H1: Light emission width in the slow direction at the emission part 8
L2: It can be obtained from the distance from the focal position N2 of the second aspherical lens 22 to the condenser M. Note that {(L2-F) / F} indicates a magnification.

  Here, when L2 = 30 mm, H2 = {(30−8) / 8} 0.5 = 2.75 × 0.5 = 1.375 mm, and the width h2 in the fast direction of the light collecting portion M is Since the above-mentioned magnification is multiplied by 1 μm, which is the light emission width h1 in the first direction in the emission part 8, it is 2.75 μm.

  Thus, by adjusting the combined F value of the first aspherical lens 21 and the second aspherical lens 22 and the distance L2 from the focal position N2 of the second aspherical lens 22 to the condensing part M, the second Since the width H2 in the slow direction of the condensing part M formed at a position away from the aspherical lens 22 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more is appropriately changed, the laser light in the condensing part M The line shape of L is deformed.

  As described above, according to the second embodiment, from the distance d between the focal position N1 of the first aspherical lens 21 and the focal position N2 of the second aspherical lens 22, and the focal position N2 of the second aspherical lens 22. By changing the distance L2 to the condensing part M, the width H2 of the condensing part M in the slow direction can be changed, and the shape of the laser light L in the condensing part M is deformed into a desired line shape. Therefore, multi-point simultaneous soldering can be easily performed on a heated part such as a flexible printed wiring board connector (FPC connector) or an electronic device, thereby improving the efficiency of soldering. it can.

  In the second embodiment, the emission part 8 of the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm. A watt-class one-chip semiconductor laser 9 having a light emission width of 0.05 mm to 0.5 mm and a light emission width in the first direction of 0.5 μm to 5 μm may be used.

  In the second embodiment, the first aspherical lens 21 has an F value indicating the lens brightness of F8 and a numerical aperture NA of 0.3, but the F value is F4 to F9 and the numerical aperture NA is 0. .3 or more.

In the second embodiment, the second aspherical lens 22 has an F value indicating brightness of F14.5, but the F value may be F3 to F50.
(Embodiment 3)
Hereinafter, a laser heating apparatus according to Embodiment 3 of the present invention will be described with reference to the drawings.

  The structure of the laser heating apparatus in Embodiment 3 of this invention is demonstrated. The configuration of the laser heating apparatus in the third embodiment is substantially the same as that in the first embodiment, and thus detailed description thereof is omitted, and only a different part, that is, the lens configuration of the lens holding unit will be described. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 4, the lens holding part (not shown) is arranged in front of the watt-class one-chip semiconductor laser 9 with the optical axis center 7 as the center, the F value is F8, and the numerical aperture NA is. 0.3, an aspherical lens 31 for collimating the laser beam L in the fast direction emitted from the watt-class one-chip semiconductor laser 9, and an aspherical lens 31 disposed in front of the aspherical lens 31 with the optical axis center 7 as the center. Is a cylindrical lens 32 that condenses the laser light L in the fast direction collimated by the aspherical lens 31 and collimates the laser light L in the slow direction.

Note that the emission portion 8 formed in the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm.
The aspherical lens 31 and the cylindrical lens 32 are arranged so that the aspherical portions 31A and 32A face each other.

Hereinafter, the operation in the third embodiment will be described with reference to FIGS.
First, the width H2 in the slow direction at the processing point P is
H2 = {(L2-F) / F} H1 (5)
L2: Distance from the focal position N1 of the aspherical lens 31 to the processing point P
F: F value of the aspherical lens 31
H1: It can be obtained from the light emission width in the slow direction at the emitting portion 8.

  Thus, for example, when L2 = 50 mm, H2 = {(50−8) / 8} 0.1 = 0.525≈0.52 mm, and when L2 = 45 mm, H2 = {(45−8 )}} 0.1 = 0.625≈0.46 mm.

  Here, in order to make the shape of the laser beam L at the processing point P a square spot, the width h2 in the fast direction at the processing point P must be the same as the width H2 in the slow direction at the processing point P, that is, H2. = H2.

At this time, the similarity formula in the first direction is
h2: (L2-F2-d) = D: F2 (6)
h2: width in the first direction at the processing point P
F2: From the focal position N2 of the cylindrical lens 32 to the condenser M
distance
d: Cylindrical lens 3 from the focal position N1 of the aspherical lens 31
Distance to 2 focal position N2
D: Maximum in the first direction of the laser light L in the aspheric lens 31
The above formula (6) is transformed into h2 × F2 = (L2−F2) D−dD. From this formula, d = {(L2−F2) D−h2 × F2} / D (7) )
Is derived.

  Here, when L2 = 50 mm, F2 = 40 mm, and D = 6 mm, the shape of the laser beam L at the processing point P is a square spot with one side calculated as above, that is, h2 = H2 = 0.52 mm. When the square spot is formed, the distance d from the focal position N1 of the aspherical lens 41 to the focal position N2 of the cylindrical lens 32 is d≈6.8 mm from the above equation (7).

  Further, when L2 = 50 mm, F2 = 40 mm, and D = 6 mm, which are the same conditions as described above, as the shape of the laser light L at the processing point P, a square spot having one side calculated above of 0.46 mm, that is, h2 = H2 = 0.46 mm When forming a square spot, the distance d from the focal position N1 of the aspherical lens 31 to the focal position N2 of the cylindrical lens 32 is set to d≈1.2 mm from the above equation (7). The

  Thus, by setting in advance the length (width) of one side of the square spot to be formed at the processing point P, and adjusting the distance d from the focal position N1 of the aspherical lens 31 to the focal position N2 of the cylindrical lens 32. A square spot of a desired size is obtained at the processing point P.

  As described above, according to the third embodiment, as shown in FIG. 5, when the workpiece 35 of the land 34 provided on the epoxy substrate 33 is processed, the light converging part M is connected to the workpiece 35 ( By adjusting so as to be generated before the processing point P) and irradiating the workpiece 35 with the processing point P formed in a square spot (square shape), the optimum soldering to the workpiece 35 is achieved. At the same time, since the epoxy substrate 33 is irradiated with the laser beam L defocused behind the processing point P, it is possible to optimally solder the workpiece 35 without scorching the epoxy substrate 33. Therefore, the efficiency of soldering can be improved.

  In the third embodiment, the emission part 8 of the watt-class one-chip semiconductor laser 9 has a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm. A watt-class one-chip semiconductor laser 9 having a light emission width of 0.05 mm to 0.5 mm and a light emission width in the first direction of 0.5 μm to 5 μm may be used.

  In the third embodiment, the aspherical lens 31 has the F value indicating the brightness of the lens as F8 and the numerical aperture NA of 0.3, but the F value is F4 to F9 and the numerical aperture NA is 0. .3 or more.

In the third embodiment, the cylindrical lens 32 has an F value indicating brightness of F40, but the F value may be F10 to F50.
(Embodiment 4)
Hereinafter, a laser heating apparatus according to Embodiment 4 of the present invention will be described with reference to the drawings.

  The structure of the laser heating apparatus in Embodiment 4 of this invention is demonstrated. Since the configuration of the laser heating apparatus in the fourth embodiment is substantially the same as that in the first embodiment, detailed description thereof will be omitted, and only a different part, that is, the lens configuration of the lens holding unit will be described. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 6, the laser heating apparatus according to the fourth embodiment is a first watt-class one-chip semiconductor laser (first radiating laser beam L1 centered on the first optical axis center 41B in the front-rear direction X). An example of a one-watt class one-chip semiconductor laser light source) 41 and a laser beam arranged in a direction orthogonal to the first optical axis center 41B, that is, in the left-right direction Y, and centered on the second optical axis center 42B in the left-right direction Y. A first optical axis center in front of the second watt-class one-chip semiconductor laser (an example of a second watt-class one-chip semiconductor laser light source) 42 that emits the light L2 and the first watt-class one-chip semiconductor laser 41 in the laser emission direction. The first aspherical lens 43, which is arranged around 41B and collimates the laser beam L1, and the laser output of the second watt-class one-chip semiconductor laser 42. The first optical axis in front of the second aspherical lens 44 centered on the second optical axis center 42B in the direction, the first aspherical lens 43 and the second aspherical lens 44 in the laser emission direction. A PBS prism (also called a polarization beam splitter) (an example of a prism) 45 that is arranged around the intersection of the center 41B and the second optical axis center 42B and adds the laser light L1 and the laser light L2, and a laser of the PBS prism 45 It is arranged in front of the emission direction with the first optical axis center 41B as the center, and includes a condenser lens 46 that condenses the laser beams L1 and L2 from the PBS prism 45, and the like.

  The first watt-class one-chip semiconductor laser 41 is arranged so that the first direction of the emission part 41A is the left-right direction Y, and the second watt-class one-chip semiconductor laser 42 is the slow direction (polarization direction) of the emission part 42A. Are arranged in the front-rear direction X.

  The emission portions 41A and 42A formed in the watt-class one-chip semiconductor lasers 41 and 42 have a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 0.5 μm, respectively. It is 5 μm.

Hereinafter, the operation in the fourth embodiment will be described with reference to FIG.
The focal position of the first aspherical lens 43 is N1, the focal position of the second aspherical lens 44 is N2, the distance from the emitting part 41A of the first watt class one-chip semiconductor laser 41 to the focal position N1 is f ₁ , the distance from the emitting portion 42A of the watt one-chip semiconductor laser 42 to the focal position N2 and f _2.

Here, the first aspheric lens 43 is moved back and forth on the first optical axis center 41B so that the F value of the first aspheric lens 43 and the second aspheric lens 44 is F = f ₁ = f _2. The second aspheric lens 44 is moved back and forth on the second optical axis center 42B.

  As a result, as shown in FIG. 6A, the laser beam L1 emitted from the first watt class one-chip semiconductor laser 41 is emitted from the first watt class one-chip semiconductor laser 41 in the first direction (left-right direction Y). The laser beam L1 thus focused is collimated in the fast direction and collimated, and reaches the condensing unit M via the condensing lens 46 in a collimated state. The laser beam L2 emitted from the second watt-class one-chip semiconductor laser 42 is reflected by the PBS prism 45 and then reaches the condensing unit M via the condensing lens 46 in a collimated state.

  As shown in FIG. 6B, the laser beam L1 emitted from the first watt class one-chip semiconductor laser 41 is emitted from the first watt class one-chip semiconductor laser 41 in the slow direction (vertical direction). The laser beam L1 is collimated by the condenser lens 46. The laser light L2 emitted from the second watt-class one-chip semiconductor laser 42 is focused in the fast direction, collimated, reflected by the PBS prism 45, and then condensed by the condenser lens 46.

  Thereby, the laser light L1 in the condensing part M is collimated in the slow direction and is condensed in the fast direction, and the laser light L2 in the condensing part M is condensed in the slow direction (laser light L1). At the same time, since it is collimated in the fast direction (of the laser beam L1), a regular cross spot is obtained at the condensing part M.

Further, when the distance f ₁ = F and the distance f ₂ > F, the laser light L1 in the light converging part M is collimated in the slow direction and condensed in the fast direction, and the laser light in the light converging part M L2 is condensed in the slow direction (of the laser light L1) and diffused in the fast direction (of the laser light L1), so that a cross-shaped spot that is long in the vertical direction is obtained in the condensing part M.

Further, when the distance f ₁ > F and the distance f ₂ = F, the laser light L1 in the condensing unit M is diffused in the slow direction and condensed in the fast direction, and the laser light in the condensing unit M L2 is condensed in the slow direction (laser beam L1) and collimated in the fast direction (laser beam L1), so that a cross-shaped spot that is long in the left-right direction is obtained in the condensing part M.

As described above, by appropriately changing the distances f ₁ and f ₂ , the condensing unit M formed at a position away from the condensing lens 46 by 20 mm or more, that is, the condensing unit M having a WD of 20 mm or more, A cruciform spot having a line width of 10 to 50 μm and a line length of 100 to 500 μm is formed.

  As described above, according to the fourth embodiment, it is possible to obtain a cruciform spot in the condensing part M, and to easily determine the irradiation center, so that optimal soldering is performed on the workpiece. Therefore, the efficiency of soldering can be improved.

  Further, according to the fourth embodiment, as shown in FIG. 7, when the workpieces A and B are joined, the margin of irradiation deviation can be increased, and therefore the irradiation center S is shifted. However, the workpieces A and B can be heated with a high-density laser beam.

Further, according to the fourth embodiment, by changing the F value of the condensing lens 46, the spot size and WD in the condensing part can be easily changed, and the distances f ₁ and f ₂ are different values. By doing so, the aspect ratio of the cruciform spot in the condensing part M can be easily changed.
(Embodiment 5)
Hereinafter, a laser heating apparatus according to Embodiment 5 of the present invention will be described with reference to the drawings.

  The structure of the laser heating apparatus in Embodiment 5 of this invention is demonstrated. The configuration of the laser heating apparatus in the fifth embodiment is substantially the same as that in the first embodiment, and thus detailed description thereof will be omitted. Only a different part, that is, the lens configuration of the lens holding portion will be described. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 8, the laser heating apparatus of the fifth embodiment is a first watt-class one-chip semiconductor laser (first radiating laser beam L1 centered on the first optical axis center 51B in the front-rear direction X). An example of a 1-watt class one-chip semiconductor laser light source) 51 and a laser beam arranged in a direction orthogonal to the first optical axis center 51B, that is, in the left-right direction Y, and centered on the second optical axis center 52B in the left-right direction Y. A second watt-class one-chip semiconductor laser (an example of a second watt-class one-chip semiconductor laser light source) 52 that emits light L2, and a laser of the first watt-class one-chip semiconductor laser 51 and the second watt-class one-chip semiconductor laser 52 The laser beam L1 and the laser beam are arranged in front of the emission direction, centering on the intersection of the first optical axis center 51B and the second optical axis center 52B. A PBS prism (also called a polarization beam splitter) 53 that adds 2 (an example of a prism) 53 and the PBS prism 53 are arranged in front of the first optical axis center 51B in the laser emission direction and added by the PBS prism 53. A round convex aspherical lens (an example of an aspherical lens) 54 for condensing the laser beams L1 and L2 is used. An insulator 55 having a thickness of 0.1 mm is provided between the first watt-class one-chip semiconductor laser 51 and the second watt-class one-chip semiconductor laser 52.

  The first watt-class one-chip semiconductor laser 51 is arranged so that the first direction of the emission part 51A is the left-right direction Y, and the second watt-class one-chip semiconductor laser 52 is arranged such that the slow direction of the emission part 52A is the front-rear direction X. It is arranged to become.

  In addition, the emission portions 51A and 52A formed in the watt-class one-chip semiconductor lasers 51 and 52 have a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm, respectively. It is 5 μm.

Hereinafter, the operation in the fifth embodiment will be described with reference to FIG.
The focal position of the round-convex aspherical lens 54 is N1, the distance from the emitting part 51A of the first watt-class one-chip semiconductor laser 41 to the focal position N1 is L1, and the distance from the focal position N1 to the condensing part M is L2. .

  As shown in FIG. 8A, the laser emitted from the first watt class one-chip semiconductor laser 51 in the first direction (left-right direction Y) of the laser light L1 emitted from the first watt class one-chip semiconductor laser 51. The light L1 is collected by the round convex aspheric lens 54. Further, the laser light L2 emitted from the second watt-class one-chip semiconductor laser 52 is reflected by the PBS prism 53, that is, added to the laser light L1, and then collimated through the round-convex aspheric lens 54. It reaches the condensing part M.

  Further, as shown in FIG. 8B, the laser beam L1 emitted from the first watt class one-chip semiconductor laser 51 is emitted from the first watt class one-chip semiconductor laser 51 in the slow direction (vertical direction Z). The laser light L1 reaches the condensing part M through the PBS prism 53 and the round-convex aspherical lens 54 in a collimated state. The laser light L2 emitted from the second watt-class one-chip semiconductor laser 52 is reflected by the PBS prism 45, that is, added to the laser light L1, and then condensed by the round-convex aspheric lens 54.

  Thereby, the laser beam L1 in the condensing part M formed at a position away from the round-convex aspherical lens 54 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more is collimated in the slow direction and fast. Condensed in the direction, and the laser light L2 in the condensing part M is condensed in the slow direction (laser light L1) and collimated in the fast direction (laser light L1). A regular cross spot is obtained at.

  Therefore, for example, when the F value of the round-convex aspheric lens 54 is F8, the distance L1 is 9.5 mm, and the distance L2 is 50 mm, the light condensing part M has a line width of 5.3 μm and a line length of 530 μm. A letter-shaped spot is formed.

  Further, assuming that the distance from the emitting portion 52A to the PBS prism 53 is d1, and the distance from the emitting portion 51A to the PBS prism 53 is d2, the size of the distance d1 and the distance d2 is changed, so The length (size) of the letter-shaped spot in the left-right direction Y and the up-down direction Z can be changed.

  Further, as shown in FIGS. 8C and 8D, the first watt-class one-chip semiconductor laser 51 is emitted on the optical axis center 51B to a predetermined F value of the round-convex aspheric lens 54. The distance from the portion 51A to the round-convex aspherical lens 54 is adjusted, the round-convex aspherical lens 54 is disposed at that position, and the round-convex disposed at the position where the distance is adjusted with the optical axis center 51B as the center. Between the aspherical lens 54 and the condensing part M, the first cylindrical lens 56 is arranged on the round-convex aspherical lens 54 side, and is arranged at a position where the distance is adjusted around the optical axis center 51B. Between the round-convex aspherical lens 54 and the condensing part M, the second cylindrical lens 57 is disposed on the condensing part M side.

  The cylindrical lenses 56 and 57 are arranged so that the aspherical portions 56A and 57A face the round-convex aspherical lens 54 side, and the first cylindrical lens 56 and the second cylindrical lens 57 have a 90-degree ridge direction. Are different, that is, the second cylindrical lens 57 is arranged in a state where the first cylindrical lens 56 is rotated by 90 degrees.

  At this time, as shown in FIG. 8C, the laser beam L1 emitted from the first watt class one-chip semiconductor laser 51 is emitted from the first watt class one-chip semiconductor laser 51 in the first direction (left-right direction Y). The laser beam L 1 is collimated by the round convex aspheric lens 54 and then condensed by the second cylindrical lens 57. The laser light L2 emitted from the second watt-class one-chip semiconductor laser 52 is reflected by the PBS prism 53, that is, added to the laser light L1, and in a collimated state, the round-convex aspherical lens 54 and the first cylindrical lens. After passing through 56, the light is collected by the second cylindrical lens 57.

  Further, as shown in FIG. 8D, the laser light L1 emitted from the first watt class one-chip semiconductor laser 51 is emitted from the first watt class one-chip semiconductor laser 51 in the slow direction (vertical direction Z). The laser light L1 is condensed by the first cylindrical lens 56 after passing through the PBS prism 53 and the round-convex aspherical lens 54. The laser light L2 emitted from the second watt-class one-chip semiconductor laser 52 is reflected by the PBS prism 53, collimated by the round-convex aspheric lens 54, and then condensed by the first cylindrical lens 56. .

  Here, by adjusting the positions of the first cylindrical lens 56 and the second cylindrical lens 57 on the optical axis center 51B, that is, by moving them on the optical axis center 51B in the front-rear direction, a cross-shaped spot in the light condensing unit M is obtained. The lengths (sizes) in the left-right direction Y and the up-down direction Z can be changed, so that the shape of the laser light in the condensing part M can be changed to a desired cross-shaped spot.

  The first watt-class one-chip semiconductor laser 51 and the second watt-class one-chip semiconductor laser 52 are each fixed to a heat sink (not shown), and these heat sinks are attached to the front and rear portions of the holder body 2A. Each heat sink can be moved to a desired position by being moved in the front-rear direction X and the left-right direction Y by an adjustment tool (such as a screw) (not shown) provided.

  As described above, according to the fifth embodiment, a desired cruciform spot can be obtained in the condensing unit M, and the irradiation center can be easily determined. Therefore, the efficiency of soldering can be improved.

In addition, according to the fifth embodiment, as shown in FIG. 7, when the workpieces A and B are joined, the margin of irradiation deviation can be increased, and therefore the irradiation center S is shifted. However, the workpieces A and B can be heated with a high-density laser beam.
(Embodiment 6)
Below, the laser heating apparatus in Embodiment 6 of this invention is demonstrated, referring drawings.

  The structure of the laser heating apparatus in Embodiment 6 of this invention is demonstrated. The configuration of the laser heating apparatus in the sixth embodiment is substantially the same as that in the first embodiment, and thus detailed description thereof is omitted, and only a different part, that is, the lens configuration of the lens holding unit will be described. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 9, two emission parts 8 in the vertical direction Z are formed with a light emission width of 0.5 mm in the slow direction and a light emission width of 1 μm in the first direction and emitting laser light around the optical axis center 7. (Multiple) Stack LD 63 (an example of a watt-class one-chip semiconductor laser light source) and a lens holding part (not shown) are arranged in the vertical direction Z around the optical axis center 7 in front of the stack LD 63, respectively. Positioned approximately at the center between the stack LD 63 and the condensing part M with the two (plural) fast lenses 61 condensing the laser light L in the fast direction emitted from each emitting part 8 and the optical axis center 7 as the center. The first cylindrical lens 62 is provided that condenses the laser light L in the slow direction emitted from the emission part 8 that the stack LD 63 lacks. .

Hereinafter, the operation of the sixth embodiment will be described with reference to FIG.
As shown in FIG. 9A, the F value of the first cylindrical lens 62 arranged in the lens holding unit 11 is
F = (L1 × L2) / (L1 + L2) (1)
L1: Distance from the emitting portion 8 to the focal position N of the first cylindrical lens 62
Separation
L2: Distance from the focal position N of the first cylindrical lens 62 to the condenser M
It can be obtained by separation.

Here, for example, when L1 = 40 mm and L2 = 40 mm, F = (40 × 40) / (40 + 40) = 20, so the first cylindrical lens 62 of F20 is used.
When the first cylindrical lens 62 of F20 is used, the width H2 in the slow direction of the light condensing unit M is
H2 = {(L2-F) / F} H1 (2)
H1: It can be obtained from the light emission width in the slow direction at the emitting portion 8. Note that {(L2-F) / F} indicates a magnification.

Here, when H1 = 0.5 mm, H2 = {(40−20) / 20} 0.5 = 1 × 0.5 = 0.5 mm.
Further, the width h2 in the fast direction in the light condensing part M is 1 μm because the light emission width h1 in the fast direction in the emitting part 8 is multiplied by the above magnification.

  Thus, the lens holding unit 11 is adjusted by adjusting the distance L1 from the emitting unit 8 to the focal position N of the first cylindrical lens 62 and the distance L2 from the focal position N of the first cylindrical lens 62 to the condensing unit M. By appropriately determining the F value of the first cylindrical lens 62 disposed in the condensing unit M formed at a position separated from the first cylindrical lens 62 by 20 mm or more, that is, the condensing unit M having a WD of 20 mm or more. Since the width H2 in the slow direction is appropriately deformed, the line shape of the laser light L in the condensing part M is deformed.

  Further, as shown in FIGS. 9C and 9D, an F-number larger than that of the first cylindrical lens 62 between the fast lens 61 and the first cylindrical lens 62 with the optical axis center 7 as the center ( A second cylindrical lens 64 having F10 to F50) is arranged.

The second cylindrical lens 64 is arranged so that the aspherical surface portion 64A faces the fast lens 61 side.
At this time, as shown in FIG. 9C, the laser light in the slow direction emitted from the stack LD 63 passes through the fast lens 61 and the second cylindrical lens 64, and is then collected in a line by the first cylindrical lens 62. Lighted.

  Further, as shown in FIG. 9D, one laser beam L1 in the fast direction emitted from the stack LD 63 is collimated by the fast lens 61 without being parallel to the optical axis center 7, and then the second cylindrical beam. The light is collected by the lens 64. The other laser beam L2 is collimated by the fast lens 61 in a state parallel to the optical axis center 7, and then condensed by the second cylindrical lens 64.

  Thus, even when the alignment (position adjustment) of the fast lens 61 is deviated and the optical axis 65 of the one laser beam L1 is deviated, the position of the second cylindrical lens 57 is adjusted on the optical axis center 7. Thus, that is, by moving the optical axis center 7 in the front-rear direction, the laser light L1 can be condensed on the condensing part M, and the shape of the laser light in the condensing part M can be changed to a desired shape (for example, , Line shape, rectangular shape, etc.).

  When the first cylindrical lens 62 having an F value of 20, for example, is used as the first cylindrical lens 62, L1 = L2 = 40 mm, and the width H2 in the slow direction in the light converging part M where WD is 25 mm or more is emitted. The light emission width H1 in the slow direction in the portion 8 can be set to, for example, 0.05 mm to 0.5 mm.

  As described above, according to the sixth embodiment, the distance L1 from the emitting unit 8 to the focal position N of the first cylindrical lens 62 and the distance L2 from the focal position N of the first cylindrical lens 62 to the condensing unit M are changed. By changing the F value and using the first cylindrical lens 62 having this F value, the width H2 in the slow direction of the condensing part M can be changed. Can be deformed into a desired line shape, and a plurality of laser beams L emitted from the stack LD 63 are condensed on the condensing unit M, and a condensing degree (laser light power) in the condensing unit M is increased. Because it can be increased, simultaneous multi-point soldering to heated parts such as flexible printed wiring board connectors (FPC connectors) and electronic devices is short. It can be easily performed (fast), thus it is possible to improve the efficiency of the soldering.

  In the sixth embodiment, the emission part 8 of each watt class one-chip semiconductor laser 9 in the stack LD 63 has a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm. 8 may be a watt-class one-chip semiconductor laser 9 having a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm.

In the sixth embodiment, the first cylindrical lens 62 has the F value indicating the brightness of the lens as F20, but the F value may be in the range of F10 to F50.
(Embodiment 7)
Next, FIG. 10 illustrates the configuration of the laser heating apparatus according to Embodiment 7 of the present invention. The configuration of the laser heating apparatus according to the seventh embodiment is substantially the same as that of the first embodiment, so detailed description thereof will be omitted, and only different parts, that is, the configuration of the lens holding unit and the laser light source will be described. To do. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIGS. 10A and 10B, the laser heating apparatus according to the seventh embodiment is arranged in a line on the center line 3A on the upper surface of the heat conductive insulating sheet 3 provided on the lower surface of the holder body 2A. A watt-class one-chip semiconductor laser (an example of a watt-class one-chip semiconductor laser light source) 72A, 72B, which is formed and emits laser beams L1, L2, and L3 centered on optical axis centers 71A, 71B, and 71C directed vertically upward. The heat sinks 73A, 73B, and 73C having 72C and the optical axis centers 71A, 71B, and 71C are arranged above the heat sinks 73A, 73B, and 73C, respectively, and are arranged from the watt-class one-chip semiconductor lasers 72A, 72B, and 72C. An aspherical lens 7 of F7 that collimates the emitted laser beams L1, L2, and L3 in the first direction. A, 74B, 74C, a copper step mirror (an example of laser beam adding means) 75 (above described in detail) provided above each aspheric lens 74A, 74B, 74C, and in front of the copper step mirror 75 It is provided with a condensing lens 77 of F15 that condenses the laser beams L1, L2, and L3 reflected by the copper step mirror 75.

  The copper step mirror 75 includes a 45-degree mirror 76A that reflects, that is, adds, laser light L1 emitted from the watt-class one-chip semiconductor laser 72A forward, and laser light L2 emitted from the watt-class one-chip semiconductor laser 72B. 45 degrees mirror 76B that reflects, ie, adds forward, and 45 degree mirror 76C that reflects, ie, adds, laser light L3 emitted from the watt-class one-chip semiconductor laser 72C.

Each of the watt-class one-chip semiconductor lasers 72A, 72B, and 72C has a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm.
Hereinafter, the operation in the seventh embodiment will be described with reference to FIG.

  In the fast direction, the laser beams L1, L2, and L3 emitted from the watt-class one-chip semiconductor lasers 72A, 72B, and 72C are collimated by the aspheric lenses 74A, 74B, and 74C, respectively. The collimated laser beams L1, L2, and L3 are reflected forward by the 45-degree mirrors 76A, 76B, and 76C of the copper step mirror 75, that is, added together, and then rapidly condensed by the condenser lens 77. In the condensing part M, it becomes a dot shape.

  As shown in FIG. 10C, in the flat portion 77A of the condenser lens 77, the laser light L1 emitted from the watt-class one-chip semiconductor laser 72A is located in the upper portion A, and the watt-class one-chip semiconductor laser. The laser light L2 emitted from 72B is located in the central portion B, and the laser light L3 emitted from the watt-class one-chip semiconductor laser 72C is located in the lower portion C.

  In the slow direction, the laser beams L1, L2, and L3 emitted from the watt-class one-chip semiconductor lasers 72A, 72B, and 72C pass through the aspheric lenses 74A, 74B, and 74C, respectively, and each 45 degree mirror 76A. , 76B and 76C are reflected forward, that is, added, and then gradually condensed by the condenser lens 77 to form a line shape at the condenser M.

  Thereby, in the condensing part M formed at a position away from the condensing lens 77 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more, a line-shaped laser with high condensing degree, that is, improved power. Light can be obtained.

  As described above, according to the seventh embodiment, in the condensing unit M, a line-shaped laser beam with a high degree of condensing, that is, with increased power can be obtained. Therefore, a flexible printed wiring board connector (FPC connector) ) And electronic devices or the like to be heated, multi-point simultaneous soldering can be performed in a short time (high speed), and thus the efficiency of soldering can be improved.

  In the seventh embodiment, the watt-class one-chip semiconductor lasers 72A, 72B, and 72C have a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm. Watt-class one-chip semiconductor lasers 72A, 72B, and 72C having a light emission width of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm may be used.

In the seventh embodiment, three heat sinks 73A, 73B, 73C including watt-class one-chip semiconductor lasers 72A, 72B, 72C are arranged in the front-rear direction X. However, three or more heat sinks 73-A, 73B, 73C are arranged in the front-rear direction X. May be. At this time, the copper step mirror 75 needs to include 45 degree mirrors corresponding to the number arranged in the front-rear direction X.
(Embodiment 8)
Next, FIG. 11 illustrates the configuration of the laser heating apparatus according to the eighth embodiment of the present invention. The configuration of the laser heating apparatus according to the eighth embodiment is substantially the same as that of the first embodiment, and thus detailed description thereof will be omitted. Only different parts, that is, the lens holding unit and the laser light source will be described. To do. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 11, the laser heating apparatus of the eighth embodiment has laser beams L1, L2, L3, L4 in the front-rear direction X on the upper surface of the heat conductive insulating sheet 3 provided on the lower surface of the holder body 2A. Heat sink provided with watt-class one-chip semiconductor lasers (an example of a watt-class one-chip semiconductor laser light source) 82A, 82B, 82C, and 82D that emit light centered on optical axis centers 81A, 81B, 81C, and 81D. 83A, 83B, 83C, 83D, and above the heat sinks 83A, 83B, 83C, 83D, the optical axis centers 81A, 81B, 81C, 81D are arranged around the watt class one-chip semiconductor lasers 82A, 82B, 82C, Collimate laser beams L1, L2, L3 and L4 in the first direction emitted from 82D F7 aspheric lenses 84A, 84B, 84C, 84D and copper step mirrors (an example of laser beam adding means) 85 provided above the aspheric lenses 84A, 84B, 84C, 84D (details will be described later) And an F25 achromatic lens (an example of a condensing lens) 86 that condenses the laser beams L1, L2, L3, and L4 reflected by the copper step mirror 85.

  The copper step mirror 85 includes a 45 degree mirror 85B that reflects, that is, adds, laser light L2 emitted from the watt-class one-chip semiconductor laser 82B forward, and a laser light L4 emitted from the watt-class one-chip semiconductor laser 82D. The first PBS prism 87 for reflecting the laser beam L1 emitted from the watt-class one-chip semiconductor laser 82A forward, that is, adding, and the watt-class one chip. Laser light L3 emitted from the semiconductor laser 82C is reflected between the second PBS prism 88 to be forwarded, that is, is added between the first PBS prism 87 and the 45 ° mirror 85B, and is reflected by the 45 ° mirror 85B. A half-wave plate 89 that rotates the polarization plane of L2, and the second PB It is provided between the prism 88 and 45 degree mirror 85D, 1/2 wave plate 90 for rotating is provided the polarization plane of the laser beam L4 reflected by the 45 ° mirror 85D.

  The watt-class one-chip semiconductor lasers 82A, 82B, 82C, and 82D each have a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm.

Hereinafter, the operation in the above-described eighth embodiment will be described with reference to FIG.
In the fast direction, the laser beams L1, L2, L3, and L4 emitted from the respective watt-class one-chip semiconductor lasers 82A, 82B, 82C, and 82D are collimated by the aspheric lenses 84A, 84B, 84C, and 84D, respectively. The collimated L1 and L3 are reflected or added forward by the first PBS prism 87 and the second PBS prism 88, respectively, and the collimated L2 and L4 are reflected forward or added by the 45 degree mirrors 85B and 85D, respectively. Then, the plane of polarization is rotated by the half-wave plates 89 and 90 and passes through the first PBS prism 87 and the second PBS prism 88. Then, the laser beams L1, L2, L3, and L4 reflected or added by the first PBS prism 87, the second PBS prism 88, and the 45-degree mirrors 85B and 85D are rapidly condensed by the achromat lens 86, respectively. In M, it is point-like.

  As shown in FIG. 11C, in the flat portion 86A of the achromat lens 86, the laser beams L1 and L2 emitted from the watt class one-chip semiconductor lasers 82A and 82B are located in the upper portion A, and the watt class one. The laser beams L3 and L4 emitted from the chip semiconductor lasers 82C and 82D are located in the central portion B.

  In the slow direction, the laser beams L1, L2, L3, and L4 emitted from the watt-class one-chip semiconductor lasers 82A, 82B, 82C, and 82D pass through the aspheric lenses 84A, 84B, 84C, and 84D, respectively. Then, the light is reflected by the first PBS prism 87, the second PBS prism 88, and the 45 ° mirrors 85B and 85D, that is, added together, and is gradually condensed by the achromat lens 86 and becomes a line shape at the condensing part M.

  Thereby, in the condensing part M formed at a position away from the achromat lens 86 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more, a linear laser beam having a high condensing degree, that is, improved power. Can be obtained.

  As described above, according to the eighth embodiment, in the condensing unit M, a line-shaped laser beam with a high degree of condensing, that is, with increased power can be obtained. Therefore, a flexible printed wiring board connector (an FPC connector) ) And electronic devices or the like to be heated, multi-point simultaneous soldering can be performed in a short time (high speed), and thus the efficiency of soldering can be improved.

  In the eighth embodiment, the laser beam L2 emitted from the watt-class one-chip semiconductor laser 82B and the watt-class one-chip semiconductor laser 82D are emitted by the 45-degree mirrors 85B and 85D formed on the copper step mirror 85. However, instead of the copper step mirror 85 provided with the 45 degree mirrors 85B and 85D, a prism mirror may be provided to reflect the laser lights L2 and L4.

  In the eighth embodiment, the watt-class one-chip semiconductor lasers 82A, 82B, 82C, and 82D have a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm. The width may be 0.05 mm to 0.5 mm, and the light emission width in the fast direction may be 0.5 μm to 5 μm.

In the eighth embodiment, four heat sinks 83A, 83B, 83C, and 84D including watt-class one-chip semiconductor lasers 82A, 82B, 82C, and 82D are arranged in the front-rear direction X. Two or more may be arranged. At this time, the copper step mirror 85 needs to include a 45 degree mirror, a half-wave plate, and a PBS prism according to the heat sinks arranged in the front-rear direction X.
(Embodiment 9)
Next, FIG. 12 illustrates the configuration of the laser heating apparatus according to Embodiment 9 of the present invention. The configuration of the laser heating apparatus according to the ninth embodiment is substantially the same as that of the first embodiment, and thus detailed description thereof will be omitted. Only the different portions, that is, the lens holding portion lens and the laser light source configuration will be described. explain. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 12, the laser heating device of the ninth embodiment is formed in two rows on the left and right sides with respect to the center line 3A on the upper surface of the heat conductive insulating sheet 3 provided on the lower surface of the holder body 2A. A watt-class one-chip semiconductor laser that is provided on one side of the line 3A (on the left side facing the laser emission direction) and emits laser beams L1, L2, and L3 about the optical axis centers 91A, 91B, and 91C that are directed vertically upward. (An example of a watt-class one-chip semiconductor laser light source) Heat sinks 93A, 93B, and 93C provided with 92A, 92B, and 92C, and the center line 3A (on the right side facing the laser emission direction) are provided on the other side, and laser light L4 , L5 and L6 are watt-class one-chip semiconductor lasers 92 that emit light around optical axis centers 91D, 91E, and 91F vertically upward. , 92E, and 92F and heat sinks 93D, 93E, and 93F, and lasers in the first direction that are disposed above the heat sinks 93 with the optical axis centers 91 as the centers and emitted from the watt-class one-chip semiconductor lasers 92. F7 aspherical lenses 94A, 94B, 94C, 94D, 94E, and 94F for collimating the light L, and a copper step mirror (an example of laser beam adding means) 95 provided above each aspherical lens 94 (for details) And a condensing lens 97 of F15 for condensing each laser beam L reflected by the copper step mirror 95.

  The copper step mirror 95 includes a 45-degree mirror 96A that reflects, that is, adds, laser beams L1 and L4 emitted from the watt-class one-chip semiconductor lasers 92A and 92D forward, and watt-class one-chip semiconductor lasers 92B and 92E. 45 degree mirror 96B for reflecting or adding laser beams L2 and L5 emitted forward, and 45 degree for reflecting or adding laser lights L3 and L6 emitted from watt-class one-chip semiconductor lasers 92C and 92F forward. A mirror 96C is formed.

  The watt-class one-chip semiconductor lasers 92A, 92B, 92C, 92D, 92E, and 92F have a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm, respectively.

Hereinafter, the operation in the ninth embodiment will be described with reference to FIG.
In the fast direction, the laser beams L1, L2, L3, L4, L5, and L6 emitted from the respective watt class one-chip semiconductor lasers 92A, 92B, 92C, 92D, 92E, and 92F are respectively aspherical lenses 94A, 94B, Collimated with 94C, 94D, 94E, 94F. The collimated laser beams L1 and L4 are reflected by the 45-degree mirror 96A, the laser beams L2 and L5 are reflected by the 45-degree mirror 96B, and the laser beams L3 and L6 are reflected by the 45-degree mirror 96C. The light is condensed rapidly by the condensing lens 97 and becomes a point-like shape at the condensing part M.

  As shown in FIG. 12C, in the flat portion 97A of the condenser lens 97, the laser beam L1 emitted from the watt-class one-chip semiconductor laser 92A is located in the upper left portion A, and the watt-class one-chip semiconductor. The laser beam L2 emitted from the laser 92B is located in the left central portion B, and the laser beam L3 emitted from the watt-class one-chip semiconductor laser 92C is located in the lower left portion C and emitted from the watt-class one-chip semiconductor laser 92D. The laser beam L4 thus positioned is located in the upper right portion D, and the laser beam L5 emitted from the watt class one-chip semiconductor laser 92E is located in the right center portion E, and the laser beam emitted from the watt class one-chip semiconductor laser 92F. L6 is located in the lower right portion F.

  In the slow direction, the laser beams L1, L2, L3, L4, L5, and L6 emitted from the respective watt-class one-chip semiconductor lasers 92A, 92B, 92C, 92D, 92E, and 92F are respectively aspherical lenses 94A, 94B, 94C, 94D, 94E, and 94F are transmitted. The laser beams L1 and L4 are forwarded by a 45-degree mirror 96A, the laser beams L2 and L5 are forwarded by a 45-degree mirror 96B, and the laser beams L3 and L6 are forwarded by a 45-degree mirror 96C. After being reflected, that is, added, the light is gradually condensed by the condensing lens 97 and becomes a line shape in the condensing part M.

  Thereby, in the condensing part M formed at a position away from the condensing lens 97 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more, a line-shaped laser with high condensing degree, that is, improved power. Light can be obtained.

  As described above, according to the ninth embodiment, in the condensing unit M, a line-shaped laser beam with a high degree of condensing, that is, with increased power can be obtained. Therefore, a flexible printed wiring board connector (FPC connector) ) And electronic devices or the like to be heated, multi-point simultaneous soldering can be performed in a short time (high speed), and thus the efficiency of soldering can be improved.

  In the ninth embodiment, the watt-class one-chip semiconductor lasers 92A, 92B, 92C, 92D, 92E, and 92F have a light emission width in the slow direction of 0.1 mm and a light emission width in the fast direction of 1 μm. Watt-class one-chip semiconductor lasers 92A, 92B, 92C, 92D, 92E, and 92F having a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm may be used.

In the ninth embodiment, three heat sinks 93A, 93B, 93C, 93D, 93E, and 93F including watt-class one-chip semiconductor lasers 92A, 92B, 92C, 92D, 92E, and 92F are provided in the front-rear direction X, and left and right Although two are arranged in the direction Y, three or more in the front-rear direction X and two or more in the left-right direction Y may be arranged. At this time, the copper step mirror 95 needs to include 45 degree mirrors corresponding to the number arranged in the front-rear direction X.
(Embodiment 10)
(10-A)
Next, FIG. 13 illustrates the configuration of the laser heating apparatus according to the tenth embodiment of the present invention. The configuration of the laser heating apparatus according to the tenth embodiment is substantially the same as that of the first embodiment, so detailed description thereof is omitted, and only different parts, that is, the lens holding unit and the laser light source are described. To do. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIGS. 13A and 13B, the laser heating apparatus according to the tenth embodiment has a plurality of emitting portions arranged in the left-right direction Y and emitting laser light L around the optical axis center. An LD array (an example of a watt-class one-chip semiconductor laser light source) 101 and a fast lens (cylindrical lens) that is arranged in front of the LD array 101 around the center line 101A of the LD array 101 and collimates the laser light L in the first direction. 102, a laser beam adder 103 that is arranged around the center line 101A in front of the fast lens 102 and adds the laser beam L collimated by the fast lens 102, and a center line 101A in front of the laser beam adder 103. Laser light arranged at the center and added by the laser light adder 103 It is configured of a condensing lens 104 for condensing the.

Note that the emission part of the LD array 101 has a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm, respectively.
The laser beam adder 103 is formed of a parallel plate prism, and a first reflection that reflects the laser beam L1 emitted from the right side (one side) in the emission direction of the laser beam L of the LD array 101 downward. The plate 111, the second reflector 112 that reflects the laser beam L1 reflected downward by the first reflector 111 in the forward direction, and the laser beam L1 that is reflected forward by the second reflector 112 in the middle direction The laser beam L of the LD array 101 is reflected together with the third reflector 113 that reflects (to the left) and the fourth reflector 114 that reflects the laser beam L1 reflected in the middle direction by the third reflector 113 in the forward direction. The fifth reflecting plate 115 that reflects the laser beam L2 emitted from the left side (the other side) in the emitting direction upward, and the laser beam L2 reflected upward by the fifth reflecting plate 115 is reflected forward. You The sixth reflecting plate 116, the seventh reflecting plate 117 that reflects the laser beam L2 reflected forward by the sixth reflecting plate 116 in the middle direction (rightward), and the seventh reflecting plate 117 are reflected in the middle direction. And an eighth reflector 118 that reflects the laser beam L2 forward. A cavity 119 is formed at the center of the laser adder 103, and the laser beam L3 emitted from the center of the LD array 101 is emitted in the forward direction as it is.

Hereinafter, the operation in the tenth embodiment will be described with reference to FIG.
For example, among the laser beams L emitted from the LD array 101, the laser beam L 1 emitted from the right side in the laser emission direction is incident on the laser beam adder 103 via the fast lens 102.

  Thereafter, as shown in FIG. 13, the laser light L <b> 1 is reflected downward by the first reflecting plate 111 and then reflected forward by the second reflecting plate 112. The laser beam L1 reflected in the forward direction is reflected in the middle direction by the third reflecting plate 113, and subsequently reflected in the forward direction by the fourth reflecting plate 114, and then condensed by the condenser lens 104.

  Of the laser beams L emitted from the LD array 101, the laser beam L 2 emitted from the left side in the laser emission direction is incident on the laser beam adder 103 through the fast lens 102.

  Thereafter, as shown in FIG. 13, the laser light L <b> 2 is reflected upward by the fifth reflector 115 and then reflected forward by the sixth reflector 116. The laser beam L2 reflected in the forward direction is reflected in the middle direction by the seventh reflecting plate 117, and subsequently reflected in the forward direction by the eighth reflecting plate 118, and then condensed by the condenser lens 104.

As described above, since the plurality of laser beams L (L1, L2, L3) emitted from the LD array 101 are added by the laser beam adder 103 and further condensed in a line shape by the condenser lens 104. In the condensing part M formed at a position away from the condensing lens 104 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more, a linear shape with a high degree of condensing, that is, the power of the laser light L is increased. It becomes laser light L.
(10-B)
Next, as shown in FIG. 14, instead of the laser beam adder 103 centered on the center line 101A in front of the fast lens 102, on the left side (one side) of the center line 101A in the left-right direction Y. A first reflecting mirror (an example of a first reflector) 121, a second reflecting mirror (an example of a second reflector) 122, which are arranged one by one in the vertical direction Z and inclined 45 degrees forward from the longitudinal direction X; It is adjacent to the front side of the first reflecting mirror 121 and the second reflecting mirror 122, and is disposed on the left side (one side) and the right side (the other side) of the center line 101A, and is inclined 45 degrees forward from the left-right direction Y. The laser beam adder 125 includes a third reflecting mirror (an example of a third reflector) 123 and a fourth reflecting mirror (an example of a fourth reflector) 124.

Hereinafter, the operation of the laser heating apparatus including the laser beam adder 125 will be described with reference to FIG.
For example, among the laser beams L emitted from the LD array 101, the laser beam L1 emitted from the left side in the laser emission direction is incident on the laser beam adder 125 via the fast lens 102 (FIG. 14 ( c)).

  Thereafter, the laser light L1 emitted from the left side is reflected upward by the first reflecting mirror 121 as shown in FIGS. Reflected forward by the two-reflection mirror 122. The laser beam L1 reflected in the forward direction is reflected in the right direction by the third reflecting mirror 123, and subsequently reflected in the forward direction by the fourth reflecting mirror 124, and then condensed by the condenser lens 104.

  Of the laser beams L emitted from the LD array 101, the laser beam L 2 emitted from the right side in the laser emission direction passes under the fourth reflection mirror 124 and is condensed by the condenser lens 104. Is done.

In this way, the plurality of laser beams L (L1, L2) emitted from the LD array 101 are added by the laser beam adder 125, and then lined by the condenser lens 104 as shown in FIG. In the light collecting part M formed at a position separated from the condenser lens 104 by 20 mm or more, that is, the light collecting part M having a WD of 20 mm or more, the degree of light collection is high, that is, the laser light L. The laser beam L is a line-shaped laser beam with increased power.
(10-C)
Next, as shown in FIG. 15, in place of the laser beam adders 103 and 125 arranged around the center line 101A in front of the fast lens 102, the first triangle arranged at the lowest position in the vertical direction Z A mirror (first reflector) 131, a second triangular mirror (second reflector) 132 disposed above the first triangular mirror 131, and a third triangle disposed above the second triangular mirror 132 A mirror (third reflector) 133, a fourth triangular mirror (fourth reflector) 134 disposed above the third triangular mirror, and a fifth triangular mirror disposed in front of the second triangular mirror ( (Fifth reflector) 135 and a sixth triangular mirror (sixth reflector) 136 disposed in front of the third triangular mirror 136, a seventh triangular mirror (seventh reflector) disposed in front of the fourth triangular mirror 137 , And a eighth triangular mirror (Eighth reflecting member) 138 laser beam adder 139 and a provided adjacent to the right side of the seventh triangular mirror 137.

Hereinafter, the operation of the laser heating apparatus including the above-described laser beam adder 139 will be described with reference to FIG.
For example, among the laser beams L emitted from the LD array 101, the laser beam L 1 is incident on the laser beam adder 139 through the fast lens 102. Thereafter, as shown in FIGS. 15A, 15 </ b> B, and 15 </ b> C, the light is reflected upward by the first triangular mirror 131 and then reflected forward by the second triangular mirror 132. The laser beam L1 reflected in the forward direction is reflected in the right direction by the fifth triangular mirror 135, then reflected in the forward direction by the eighth triangular mirror 138, and then condensed by the condenser lens 104.

  Of the laser beams L emitted from the LD array 101, the laser beam L 2 is incident on the laser beam adder 139 through the fast lens 102. Thereafter, as shown in FIGS. 15A, 15 </ b> B, and 15 </ b> C, the light is reflected upward by the first triangular mirror 131 and then reflected forward by the third triangular mirror 133. The laser beam L2 reflected in the forward direction is reflected in the right direction by the sixth triangular mirror 136, then reflected in the forward direction by the eighth triangular mirror 138, and then collected by the condenser lens 104.

  Of the laser beams L emitted from the LD array 101, the laser beam L 3 is incident on the laser beam adder 139 through the fast lens 102. Thereafter, as shown in FIGS. 15A, 15 </ b> B, and 15 </ b> C, the light is reflected upward by the first triangular mirror 131 and then reflected forward by the fourth triangular mirror 134. The laser beam L3 reflected in the forward direction is reflected in the right direction by the seventh triangular mirror 137, subsequently reflected in the forward direction by the eighth triangular mirror 138, and then condensed by the condenser lens 104.

As described above, since the plurality of laser beams L emitted from the LD array 101 are added by the laser beam adder 139 and further collected in a line shape by the condenser lens 104, 20 mm from the condenser lens 104 is obtained. In the condensing part M formed in the position farther away, that is, the condensing part M having a WD of 20 mm or more, the line-shaped laser light L has a high degree of condensing, that is, the power of the laser light L is increased.
(10-D)
Next, as shown in FIG. 16, in place of the LD array 101, the laser diode L is arranged in the left-right direction Y and the up-down direction Z, and has a plurality of emitting portions that emit laser light L around the optical axis center. Instead of the stack LD (an example of a watt-class one-chip semiconductor laser light source) 141 and the fast lens (cylindrical lens) 102 in which the array 101 is stacked, the center line 101A is arranged in front of the stack LD 141, and the upper and lower portions are horizontally arranged. Three (a plurality) of the cut portions are stacked in the vertical direction Z, and a fast lens (rod lens) 142 that collimates the laser light L in the first direction and the laser light adders 103, 125, and 139 are stacked. Instead, centering on the center line 101A in front of the fast lens 142 Is location, and a laser beam adder 143 for condensing the laser beam L is collimated by fast lens 142.

Note that the emission part of the stack LD 141 has a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 1 μm.
The laser beam adder 143 includes three plano-convex lenses 144A, 144B, and 144C disposed in front of the fast lens 142 and a plano-convex lens 144A that is provided on the right side among the three plano-convex lenses 144A, 144B, and 144C. A right wedge prism 145A disposed behind and a left wedge prism 145B disposed behind the plano-convex lens 144A provided on the left side of the three plano-convex lenses 144A, 144B, and 144C. Yes.

Hereinafter, the operation of the laser heating apparatus including the laser beam adder 143 will be described with reference to FIG.
For example, among the laser beams L emitted from the stack LD 141, the laser beam L 1 emitted from the right side is incident on the laser beam adder 143 through the fast lens 142. Thereafter, as shown in FIG. 16, the incident angle of the laser light L1 is changed by the plano-convex lens 144A, is incident on the condenser lens 104 through the right wedge prism 145A, and is condensed by the condenser lens 104.

  Of the laser beams L emitted from the stack LD 141, the laser beam L 2 emitted from the left side enters the laser beam adder 143 through the fast lens 142. Thereafter, as shown in FIG. 16, the incident angle of the laser light L2 is changed by the plano-convex lens 144C, is incident on the condenser lens 104 via the right wedge prism 145B, and is condensed by the condenser lens 104.

  As described above, since the plurality of laser beams L emitted from the stack LD 141 are added by the laser beam adder 143 and further condensed in a line shape by the condenser lens 104, the laser beams L from the condenser lens 104 are 20 mm or more. In the condensing part M formed in a distant position, that is, the condensing part M having a WD of 20 mm or more, the laser beam L is a line-shaped laser light L having a high degree of condensing, that is, a high power of the laser light L.

  As described above, according to the tenth embodiment, the laser beam adders 103, 125, 139, and 143 can obtain, in the light condensing unit M, a line-shaped laser beam with a high degree of condensing, that is, with increased power. Therefore, multi-point simultaneous soldering can be easily performed in a short time (high speed) to a heated part such as a flexible printed wiring board connector (FPC connector) or an electronic device. Can be improved.

In the tenth embodiment, a plurality of LD arrays 101 provided in the left-right direction Y and having an emission part that emits laser light L are used. However, a one-chip LD that emits an expanded line beam may be used.
(Embodiment 11)
Next, the structure of the laser heating apparatus in Embodiment 11 of this invention is demonstrated based on FIG. The configuration of the laser heating apparatus according to the eleventh embodiment is substantially the same as that of the first embodiment, and thus detailed description thereof will be omitted. Only different portions, that is, the lens holding unit and the laser light source configuration will be described. To do. The same members as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 17, the laser heating apparatus of the eleventh embodiment is 1 mm above the emitting portion 8 of a watt-class one-chip semiconductor laser (not shown) that emits laser light L1 around the optical axis center 7. An upper watt-class one-chip semiconductor laser (not shown) provided with an upper emission part 151 for emitting the laser beam L2, and an inner holder disposed at the tip of the holder 2 around the optical axis center 7. A lens holding part 152 having 152A and an outer holding body 152B, an F4 aspherical lens 153 arranged around the optical axis center 7 and held by the inner holding body 152A of the lens holding part 152, and a lens holding Larger than the diameter of the first cavity 155A and the outer holding body 152B, which are attached to the outer holding body 152B of the portion 152 and formed to have a diameter smaller than the diameter of the outer holding body 152B. A second cavity 155B which is formed in the radial, and a like 155 (an example of the reflector holding portion) mirror holding unit that performs reflection adjustment of the laser beam.

  The mirror holding portion 155 is formed in the radial direction from the first cavity portion 155A, and has three (a plurality of) first insertion holes 157 through which first fixing set screws 156 for fixing to the lens holding portion 152 are inserted. The second cavity 155B is formed in the radial direction, and two (plural) are formed in the front-rear direction through which the tilt adjusting set screws 158 for adjusting the tilt of the mirror mounting table 164 (described later) are inserted. A third insertion hole formed between the second insertion hole 159 and the second insertion hole 159 in the radial direction from the first cavity 155A and through which the second fixing set screw 160 for fixing the mirror mounting table 164 is inserted. 161 and a fourth insertion hole 162 which is disposed in the second cavity portion 155B and into which the second fixing set screw 160 inserted from the third insertion hole 161 is inserted is formed, and the upper emission portion 151 is formed. And 163 (one example of the reflector) mirror for reflecting the laser beam L2 al emitted, and a mirror mount (reflector mounting an example of table) 164 for supporting the mirror 163.

  The mirror 163 has one end mounted on the mirror mounting table 164 and the other end mounted on the first cavity 155A, so that the laser beams L1 and L2 are condensed by the condensing unit M, respectively. Is arranged.

The emission part 8 and the upper emission part 151 have a light emission width in the slow direction of 0.5 mm and a light emission width in the fast direction of 1 μm.
Further, when the aspherical lens 153 is held in the lens holding part 152, the aspherical lens 153 is placed so that the aspherical part of the aspherical lens 153 faces forward, that is, the aspherical part faces the emitting direction of the laser light L. .

Hereinafter, the operation of the laser heating apparatus according to the eleventh embodiment will be described with reference to FIG.
First, the mirror mounting table 164 is moved up and down by moving the respective tilt adjustment set screws 158 so that the mirror mounting table 164 is tilted appropriately so as to have an angle at which the laser beam L2 can be reflected by the condensing unit M. After the adjustment and adjustment to the desired tilt position, the mirror mounting table 164 is fixed to the mirror holding portion 155 by the second fixing set screw 160.

The laser light L1 emitted from the emission unit 8 of the watt-class one-chip semiconductor laser is condensed by the aspherical lens 153.
The laser beam L2 emitted from the upper emission unit 151 of the upper watt class one-chip semiconductor laser is condensed by the aspherical lens 153, reflected by the mirror 163 placed on the mirror placement table 164, and collected. The light is collected by the optical part M.

  As described above, the laser beam L1 emitted from the emitting unit 8 is collected by the condensing unit M, and after the laser beam L2 emitted from the upper emitting unit 151 is reflected by the mirror 163, the collecting unit Since the light is condensed by M, in the condensing part M formed at a position away from the aspherical lens 153 by 20 mm or more, that is, the condensing part M having a WD of 20 mm or more, a linear laser beam having a high degree of condensing That is, the laser light L is a high power line.

  As described above, according to the eleventh embodiment, since the mirror holding unit 155 having the mirror 163 can obtain a line-shaped laser beam with high condensing degree, that is, increased power, in the condensing unit M. Multi-point simultaneous soldering can be performed in a short time (high speed) on a heated part such as a flexible printed wiring board connector (FPC connector) or an electronic device, thus improving the soldering efficiency. it can.

  In the eleventh embodiment, the emission unit 8 and the upper emission unit 151 have a light emission width in the slow direction of 0.5 mm and a light emission width in the first direction of 1 μm. A watt-class one-chip semiconductor laser having a light emission width in the slow direction of 0.05 mm to 0.5 mm and a light emission width in the fast direction of 0.5 μm to 5 μm may be used.

  In Embodiment 11, the aspherical lens 153 has the F value indicating the brightness of the lens as F4. However, the F value may be F4 to F9 and the numerical aperture NA may be 0.3 or more.

It is a laser heating apparatus in Embodiment 1 of this invention, (a) is a top view, (b) is a side view. It is a lens holding | maintenance part of the laser heating apparatus, (a) is a top view, (b) is a side view. It is a figure which shows lens arrangement | positioning of the laser heating apparatus in Embodiment 2 of this invention, (a) is a top view, (b) is a side view. It is a figure which shows lens arrangement | positioning of the laser heating apparatus in Embodiment 3 of this invention, (a) is a top view, (b) is a side view. It is a side view at the time of processing with respect to a workpiece using the laser heating device. It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and laser light source in Embodiment 4 of this invention, (a) is a top view, (b) is a side view. It is a side view at the time of processing with respect to a workpiece using the laser heating device. It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and laser light source in Embodiment 5 of this invention, (a) is a top view, (b) is a side view, (c) is arrangement | positioning of other Embodiment 5. FIG. 6D is a side view showing the arrangement of another embodiment 5; It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and laser light source in Embodiment 6 of this invention, (a) is a top view, (b) is a side view, (c) is arrangement | positioning of other Embodiment 6. FIG. 6D is a side view showing the arrangement of another embodiment 6; It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and laser light source in Embodiment 7 of this invention, (a) is a top view, (b) is a side view, (c) is AA sectional drawing. It is a figure which shows arrangement | positioning of the lens and laser light source of the laser heating apparatus in Embodiment 8 of this invention, (a) is a top view, (b) is a side view, (c) is AA sectional drawing. It is a figure which shows arrangement | positioning of the lens and laser light source of the laser heating apparatus in Embodiment 9 of this invention, (a) is a top view, (b) is a side view, (c) is AA sectional drawing. It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and laser light source in Embodiment 10 (10-A) of this invention, (a) is a top view, (b) is a side view, (c) is AA. It is sectional drawing. It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and a laser light source in the same (10-B), (a) is a top view, (b) is a side view, (c) is AA sectional drawing, (d). Is a BB cross-sectional view, and (e) is a CC cross-sectional view. It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and a laser light source in the same (10-C), (a) is a top view, (b) is a side view, (c) is AA sectional drawing. It is a figure which shows arrangement | positioning of the lens of a laser heating apparatus and a laser light source in the same (10-D), (a) is a top view, (b) is a side view. It is a figure which shows lens arrangement | positioning of the laser heating apparatus in Embodiment 11 of this invention, (a) is a side view, (b) is AA sectional drawing.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Laser heating apparatus 7 Optical axis center 8 Light emission part 9 Watt class one chip semiconductor laser (Watt class one chip semiconductor laser
light source)
DESCRIPTION OF SYMBOLS 10 Aspherical lens 21 1st aspherical lens 22 2nd aspherical lens 31 Aspherical lens 32 Cylindrical lens 41 First watt class one chip semiconductor laser (first watt class one chip semiconductor
Body laser light source)
41B First optical axis center 42 Second watt class one-chip semiconductor laser (second watt class one-chip semiconductor)
Body laser light source)
42B Second optical axis center 43 First aspheric lens 44 Second aspheric lens 45 PBS prism (prism)
46 Condensing Lens 51 First Watt Class One-Chip Semiconductor Laser (First Watt Class One-Chip Semiconductor
Body laser light source)
51B First optical axis center 52 Second watt class one-chip semiconductor laser (second watt class one-chip semiconductor)
Body laser light source)
52B Second optical axis center 53 PBS prism (prism)
54 Round Convex Aspherical Lens (Aspherical Lens)
56 1st cylindrical lens 57 2nd cylindrical lens 61 fast lens 62 1st cylindrical lens 64 2nd cylindrical lens 71A-71C Optical axis center 72A-72C Watt class one-chip semiconductor laser (Watt class one-chip semiconductor laser
light source)
74A-74C Aspherical lens 75 Copper step mirror (laser beam adding means)
77 Condensing lenses 81A to 81D Optical axis centers 82A to 82D Watt-class one-chip semiconductor laser (Watt-class one-chip semiconductor laser
light source)
84A to 84D Aspherical lens 85 Copper step mirror (laser beam adding means)
86 Achromatic lens (condensing lens)
91A to 91F Optical axis centers 92A to 92F Watt class one-chip semiconductor laser (Watt class one-chip semiconductor laser
light source)
94A-94F Aspherical lens 95 Copper step mirror (laser beam adding means)
97 Condensing lens 101 LD array (Watt class one-chip semiconductor laser light source)
101A Center line 102 Fast lens 103 Laser light adder 104 Condensing lens 125 Laser light adder 139 Laser light adder 141 Stack LD (Watt class one-chip semiconductor laser light source)
142 fast lens 143 laser beam adder 151 emitting unit 152 lens holding unit 153 aspherical lens 155 mirror holding unit (reflector holding unit)
158 Set screw 163 for tilt adjustment Mirror (reflector)
164 mirror mounting table (reflector mounting table)

Claims (14)

A laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more,
A watt-class one-chip semiconductor laser light source of 1 W or more having a light emission width of 50 to 500 μm and a light emission width of 0.5 to 5 μm in the first direction and having an emission part for emitting laser light around the optical axis center; ,
The watt-class one-chip semiconductor laser light source is disposed in front of the watt-class one-chip semiconductor laser light source, and has an F value of F4 to F9 and a numerical aperture of 0.3 or more. Equipped with an aspheric lens that condenses laser light in the first direction
A laser heating apparatus characterized in that the shape of the laser beam in the laser beam condensing part is changed to a desired shape by utilizing the astigmatic difference between the fast direction and the slow direction of the watt class one-chip semiconductor laser. The watt class one-chip semiconductor laser light source of 3 W or more with a light emission width in the slow direction of 100 μm;
Including the aspheric lens having an F value of F7 to F9,
The position of the aspherical lens is adjusted on the optical axis center so that the laser beam in the condensing unit has a condensing width of 300 μm or more in the slow direction. Laser heating device. A laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more,
A watt-class one-chip semiconductor laser light source of 1 W or more having a light emission width of 50 to 500 μm and a light emission width of 0.5 to 5 μm in the first direction and having an emission part for emitting laser light around the optical axis center; ,
The watt-class one-chip semiconductor laser light source is disposed in front of the watt-class one-chip semiconductor laser light source, and has an F value of F4 to F9 and a numerical aperture of 0.3 or more. A first aspheric lens for collimating the laser beam in the first direction;
The first aspherical lens is disposed in front of the optical axis center and has an F value of F10 to F50. The laser light in the fast direction collimated by the first aspherical lens is condensed and thrown. A laser heating apparatus comprising a second aspheric lens for collimating laser light in a direction. A laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more,
A watt-class one-chip semiconductor laser light source of 1 W or more having a light emission width of 50 to 500 μm and a light emission width of 0.5 to 5 μm in the first direction and having an emission part for emitting laser light around the optical axis center; ,
The watt-class one-chip semiconductor laser light source is disposed in front of the watt-class one-chip semiconductor laser light source, and has an F value of F4 to F9 and a numerical aperture of 0.3 or more. An aspheric lens that collimates the laser beam in the first direction;
The aspherical lens is disposed in front of the optical axis center, has an F value of F10 to F50, condenses laser light in the fast direction collimated by the aspherical lens, and laser light in the slow direction. A laser heating apparatus comprising a cylindrical lens for collimating the lens. A laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more,
A first watt class one-chip of 1 W or more having a light emitting width of 50 to 500 μm and a light emitting width in the first direction of 0.5 to 5 μm and having a light emitting portion that emits laser light around the first optical axis center. A semiconductor laser light source;
Arranged in a direction orthogonal to the first optical axis center, formed in a slow direction emission width of 50 to 500 μm and a first direction emission width of 0.5 to 5 μm, and emits laser light around the second optical axis center A second watt-class one-chip semiconductor laser light source of 1 W or more having an emitting part that
A first aspherical lens disposed around the first optical axis center in front of the first watt-class one-chip semiconductor laser light source and collimating the laser light emitted from the first watt-class one-chip semiconductor laser light source; ,
A second aspherical lens disposed in front of the second watt-class one-chip semiconductor laser light source and centered on the second optical axis center, and collimating the laser light emitted from the second watt-class one-chip semiconductor laser light source; ,
The first aspherical lens and the second aspherical lens are arranged in front of the first optical axis center and the second optical axis center in front of the second watt-class one-chip semiconductor laser light source. A prism that reflects the emitted laser light;
A condensing lens disposed in front of the prism with the first optical axis center as a center, and condensing the laser light from the prism;
The laser light is condensed in a cross shape by the laser light emitted from the first watt-class one-chip semiconductor laser light source and the laser light emitted from the second watt-class one-chip semiconductor laser light source. A laser heating apparatus. A laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more,
A first watt class one-chip of 1 W or more having a light emitting width of 50 to 500 μm and a light emitting width in the first direction of 0.5 to 5 μm and having a light emitting portion that emits laser light around the first optical axis center. A semiconductor laser light source;
Arranged in a direction orthogonal to the first optical axis center, formed in a slow direction emission width of 50 to 500 μm and a first direction emission width of 0.5 to 5 μm, and emits laser light around the second optical axis center A second watt-class one-chip semiconductor laser light source of 1 W or more having an emitting part that
The first watt-class one-chip semiconductor laser light source and the second watt-class one-chip semiconductor laser light source are arranged in front of the first optical axis center and the second optical axis center, and A prism for adding the laser light emitted from the watt-class one-chip semiconductor laser light source and the laser light emitted from the second watt-class one-chip semiconductor laser light source;
An aspherical lens that is arranged around the first optical axis center in front of the prism and condenses the laser light added by the prism;
The laser light is condensed in a cross shape by the laser light emitted from the first watt-class one-chip semiconductor laser light source and the laser light emitted from the second watt-class one-chip semiconductor laser light source. A laser heating apparatus. The distance from the emission part of the first watt class one-chip semiconductor laser light source to the prism is a first distance,
The distance from the emission part of the second watt class one-chip semiconductor laser light source to the prism is a second distance,
The laser heating apparatus according to claim 6, wherein a desired cross shape is formed in the laser beam condensing unit by changing the sizes of the first distance and the second distance. The distance from the emitting part of the first watt class one-chip semiconductor laser light source on the optical axis center to the aspheric lens is adjusted to a predetermined F value possessed by the aspheric lens,
A first cylindrical lens disposed on the aspheric lens side between the aspheric lens disposed at a position where the distance is adjusted around the optical axis center and the condenser;
A second cylindrical lens disposed on the condensing unit side between the aspherical lens disposed at a position where the distance is adjusted around the optical axis center and the condensing unit;
The shape of the laser beam in the condensing unit is changed to a desired shape by adjusting the positions of the first cylindrical lens and the second cylindrical lens on the optical axis center. The laser heating apparatus as described. A laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more,
A wattage class of 1 watt or more having a plurality of emitting portions in the vertical direction that are formed with a light emission width of 50 to 500 μm in the slow direction and a light emission width of 0.5 to 5 μm in the first direction and centering on the optical axis center. A one-chip semiconductor laser light source;
A plurality of fast lenses arranged around the respective optical axis centers in front of the respective emission portions of the watt-class one-chip semiconductor laser light source and condensing laser light in the first direction emitted from the respective emission portions;
Centered on the optical axis center, it is disposed at a location located approximately in the center between the watt-class one-chip semiconductor laser light source and the laser beam condensing unit, and is emitted from each emitting part of the watt-class one-chip semiconductor laser light source. A laser heating apparatus comprising a first cylindrical lens for condensing laser light in the slow direction. A second cylindrical lens that is disposed between the fast lens and the first cylindrical lens around the optical axis center and has a larger F-number than the first cylindrical lens;
10. The laser heating apparatus according to claim 9, wherein the shape of the laser light in the condensing unit is changed to a desired shape by adjusting the position of the second cylindrical lens on the optical axis center. A laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more,
Formed in a slow direction light emission width of 50 to 500 μm and a first direction light emission width of 0.5 to 5 μm, having an emission part that emits laser light around the optical axis center, and a plurality of them are arranged in the front-rear direction, 1 W or more Watt-class one-chip semiconductor laser light source arranged in at least one row in the left-right direction;
A plurality of aspherical lenses arranged around the optical axis center of each watt class one-chip semiconductor laser light source, and collimating laser light in the first direction emitted from each watt class one-chip semiconductor laser light source;
Laser beam adding means for adding the laser beams from the respective aspheric lenses,
A laser heating apparatus comprising a condenser lens for condensing the laser light added by the laser light adding means. A laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more,
1W or more having a plurality of emission portions that are formed in a slow direction emission width of 50 to 500 μm and a first direction emission width of 0.5 to 5 μm, arranged in the left-right direction, and emit laser light around the optical axis center Watt-class one-chip semiconductor laser light source,
A fast lens arranged in front of the watt-class one-chip semiconductor laser light source and centering on a center line of the watt-class one-chip semiconductor laser light source, and collimating laser beams in the first direction respectively emitted from the plurality of emitting portions;
A laser beam adder that is arranged around the center line in front of the fast lens and adds laser beams respectively emitted from the plurality of emission units collimated by the fast lens;
A laser heating apparatus, comprising: a condensing lens that is disposed around the center line in front of the laser beam adder and collects the laser beam added by the laser beam adder. A laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more,
It is formed with a light emission width in the slow direction of 50 to 500 μm and a light emission width in the first direction of 0.5 to 5 μm, and is arranged in the left and right directions and the vertical direction, and has a plurality of emission portions that emit laser light around the optical axis center. A watt-class one-chip semiconductor laser light source of 1 W or more,
Laser light in the first direction that is disposed in front of the watt-class one-chip semiconductor laser light source, centered on the center line of the watt-class one-chip semiconductor laser light source, and is provided in a plurality in the vertical direction and emitted from the plurality of emitting portions, respectively. A fast lens for collimating,
A laser beam adder that is arranged around the center line in front of the fast lens and adds laser beams respectively emitted from the plurality of emission units collimated by the fast lens;
A laser heating apparatus, comprising: a condensing lens that is disposed around the center line in front of the laser beam adder and collects the laser beam added by the laser beam adder. A laser heating apparatus that emits a rectangular laser beam that dissolves a substance with a work distance of 20 mm or more,
1 W or more having a plurality of emission portions that are formed in a slow direction emission width of 50 to 500 μm and a first direction emission width of 0.5 to 5 μm and are arranged in the vertical direction and emit laser light around the optical axis center Watt-class one-chip semiconductor laser light source,
A lens holding part for holding an aspherical lens for condensing laser beams emitted from a plurality of emission parts of the watt class one-chip semiconductor laser light source;
A reflector holding unit that is attached to the lens holding unit and adjusts the reflection of laser light from the aspheric lens;
The reflector holding unit includes a reflector that reflects the laser light from the aspheric lens, a reflector mounting table that supports the reflector, and a tilt adjustment set screw that adjusts the inclination of the reflector mounting table. A laser heating apparatus comprising:

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