JP4352474B2 - Method for manufacturing organic electroluminescence display element - Google Patents
Method for manufacturing organic electroluminescence display element Download PDFInfo
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- JP4352474B2 JP4352474B2 JP20781098A JP20781098A JP4352474B2 JP 4352474 B2 JP4352474 B2 JP 4352474B2 JP 20781098 A JP20781098 A JP 20781098A JP 20781098 A JP20781098 A JP 20781098A JP 4352474 B2 JP4352474 B2 JP 4352474B2
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- resin film
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- 238000005401 electroluminescence Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title description 14
- 229920005989 resin Polymers 0.000 claims description 40
- 239000011347 resin Substances 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 2
- 238000013007 heat curing Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 27
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 4
- 239000007983 Tris buffer Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004049 embossing Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
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- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- YGLVWOUNCXBPJF-UHFFFAOYSA-N (2,3,4,5-tetraphenylcyclopenta-1,4-dien-1-yl)benzene Chemical compound C1=CC=CC=C1C1C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 YGLVWOUNCXBPJF-UHFFFAOYSA-N 0.000 description 1
- JCXLYAWYOTYWKM-UHFFFAOYSA-N (2,3,4-triphenylcyclopenta-1,3-dien-1-yl)benzene Chemical compound C1C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 JCXLYAWYOTYWKM-UHFFFAOYSA-N 0.000 description 1
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- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
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- 229910017073 AlLi Inorganic materials 0.000 description 1
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- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000005010 aminoquinolines Chemical class 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
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- WDFKMLRRRCGAKS-UHFFFAOYSA-N chloroxine Chemical compound C1=CN=C2C(O)=C(Cl)C=C(Cl)C2=C1 WDFKMLRRRCGAKS-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- OPHUWKNKFYBPDR-UHFFFAOYSA-N copper lithium Chemical compound [Li].[Cu] OPHUWKNKFYBPDR-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- OZLBDYMWFAHSOQ-UHFFFAOYSA-N diphenyliodanium Chemical compound C=1C=CC=CC=1[I+]C1=CC=CC=C1 OZLBDYMWFAHSOQ-UHFFFAOYSA-N 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- RQGPLDBZHMVWCH-UHFFFAOYSA-N pyrrolo[3,2-b]pyrrole Chemical class C1=NC2=CC=NC2=C1 RQGPLDBZHMVWCH-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
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- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
- 229960001860 salicylate Drugs 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/877—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Electroluminescent Light Sources (AREA)
Description
【0001】
【発明の属する技術分野】
本発明は有機エレクトロルミネッセンス表示素子に関する。
【0002】
【従来の技術】
有機エレクトロルミネッセンス表示素子(以下、EL表示素子という)は視野角、応答速度に優れ薄型軽量な自発光型の表示素子として注目されている。
一般にEL表示素子は、前面に蛍光を取り出すための透明電極、背面に金属電極があり、その間に有機発光層(エレクトロルミネッセンス層、以下、EL層という)を有する構成となっている。EL層は、正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層などの複数の薄膜からなることが多い。また、電極とEL層との間に誘電体層を持つ場合もある。いずれにしても、EL表示素子は複数の薄膜の積層体であり、その作成方法は、透明基板上に透明電極、EL層及び金属電極を順次蒸着法またはスパッタ法で成膜・積層するものである。
【0003】
ELの発光を取り出すための透明電極としては、ITO(Indium Tin Oxide)を用いることが多いが、成膜時に加熱する必要がある。EL層は、有機物であり各層の界面が重要であるため、熱劣化や融解を避けなければならない。一方、金属(例えばアルミニウム)電極は、基板の加熱を抑えて成膜することができる。そのため、透明基板上にまず透明電極を設け、その上にEL層、金属電極を積層することが通常行われている。
【0004】
EL層の厚さは、積層したものでも1500Å以下と非常に薄い。そのため、外部からの光はEL層を容易に通過する。EL層、金属電極の積層は平坦な基板上になされるため、金属電極も平坦であり鏡面となるから、EL層を通過した外光は、金属電極で鏡面反射されて前面に戻される。したがって、EL表示素子は鏡のように像の写り込みを起こしてしまい、表示の視認性を著しく損なうという問題を有する。
【0005】
金属電極の鏡面反射による像の写り込みの問題を解決しようとして、いくつかの方法が考えられる。一つは、散乱板のような反射防止膜をEL表示素子前面に設けて、EL表示素子への外光の導入と結像を抑止することである。一つは、偏光板や波長板をEL表示素子前面に設けて、外光の反射光をEL表示素子内に閉じこめてしまうことである。どちらもEL表示素子前面に何らかの光学フィルター類が設けられるもので、これによるEL発光の損失や表示のボケは避けられない問題である。
【0006】
もう一つは、金属電極を低反射率の材料に変更することである。然しながら、この構成では、背面金属電極でのEL発光反射損失があり、発光の利用効率が悪くなってしまう問題がある。発光の利用効率を上げるには、背面金属電極でEL発光を反射させ前面に取り出す必要がある。もう一つは、EL層を挟む2つの電極とも透明電極とし、EL表示素子の背面に拡散反射板を設けることである。この場合は、発光部と反射板との距離があるために、視差の問題が生じ、色のにじみが発生する問題がある。いずれの方法も、像の写り込み問題の解決策として最善とは言えない。
【0007】
EL発光を効率よく表示として取り出すには、背面への発光を金属電極で反射させると同時に、像の写り込みを避けなければならない。そのためには、金属電極の平坦性を下げて、鏡面を解消することが有効である。これにより、反射率を落とすことなく像の写り込みを避けることが可能となる。
【0008】
EL層と金属電極は、電子を注入するために完全に接していることが望ましいため、金属電極だけ平坦性を落とすことは出来ない。同様に正孔を注入するためにEL層と透明電極も完全に接している必要がある。したがって、金属電極の平坦性を下げるには、透明電極、EL層、金属電極の積層体全体で平坦性を下げなければならず、そのためには、下地の平坦性を下げればよい。
【0009】
然しながら、単純に下地の平坦性を下げればよいと言うわけではない。例えば、ガラス表面をフッ酸処理して得られる曇りガラスの表面は、光散乱が強すぎて表示がぼける可能性がある。フォトリソグラフィでガラス表面に適当なパターンを形成したものは、パターンの断面形状に角があり、この上に積層していくと上下電極の短絡や断線を招きやすくなるという問題がある。表面の形状の制御をより簡単な方法で行う必要がある。基板表面に型押しをするエンボス法の適用も考えられるが、大きな面積で精度良く行うために精度の高いエンボス版と押圧装置が必要で、設備投資にコストがかさむ問題がある。
【0010】
【発明が解決しようとする課題】
本発明は上記問題点に鑑み考案されたもので、金属電極の鏡面反射による像の写り込みを防止し、発光効率の高いEL表示素子を提供することを目的とする。
【0011】
【課題を解決するための手段】
本発明に於いて上記問題を解決するために、まず請求項1においては、透明基板上に複数のアノード電極、有機エレクトロルミネッセンス層及びカソード電極をこの順に積層してなる有機エレクトロルミネッセンス表示素子の製造方法において、少なくとも、
(a)透明基板上に感光性樹脂溶液を塗布する工程と、
(b)前記感光性樹脂溶液を乾燥し、感光性樹脂膜を形成する工程と、
(c)前記感光性樹脂膜上に、ドット状のパターンが位置的にランダムに分布しているフォトマスクを用いて、露光する工程と、
(d)露光後の前記感光性樹脂膜を現像せずに加熱することで、前記感光性樹脂膜を硬化させ、前記透明基板上にドット状の凹凸樹脂膜を形成する工程と、
(e)前記凹凸樹脂膜上に透明電極、EL層、金属電極をこの順に形成する工程と、
を含むことを特徴とする有機エレクトロルミネッセンス表示素子の製造方法としたものである。
【0012】
また、請求項2においては、前記ドット状の凹凸はドット径10μm以下、高さが500Å以上のなだらかな曲面で構成されていることを特徴とする請求項1に記載の有機エレクトロルミネッセンス表示素子の製造方法としたものである。
【0013】
さらにまた、請求項3においては、前記ドット状の凹凸は前記透明基板上の感光性樹脂膜をパターン露光、加熱硬化することにより形成されていることを特徴とする請求項1又は2に記載の有機エレクトロルミネッセンス表示素子の製造方法としたものである。
【0014】
【発明の実施の形態】
以下本発明の実施の形態につき説明する。
本発明者らは、金属の鏡面反射による像の写り込みを防止する方法を鋭意検討した結果透明基板上にドット状のなだらかな凹凸を形成して、透明電極、EL層及び金属電極を形成すると鏡面反射による像の写り込みを防止できることを見いだした。具体的には、ドット径が10μm以下、高さが500Å以上のなだらかな曲面で構成されているランダムに配置されたドット状の凹凸を形成して、透明電極、EL層及び金属電極を形成すると金属電極の鏡面反射による像の写り込みを防止できる。
【0015】
具体的には、まず、透明基板201上に感光性樹脂溶液を塗布し、所定の温度で乾燥し感光性樹脂膜を形成する。ここで、透明基板としては石英基板、ガラス基板、プラスチック基板などが使用できる。感光性樹脂膜の物性は化学的安定性、熱的安定性に加え透明性が要求される。感光性樹脂溶液の塗布方法はスピンコート法、ロールコート法、印刷法等があり、使用する感光性樹脂溶液に応じて適宜選択すればよい。
【0016】
次に、感光性樹脂膜上に所定のドットパターンを有するフォトマスクを用いて露光する。ここで、フォトマスクは、ドット状のパターンが位置的にランダムに分布しているものである。ドットパターン径は10μm以下であれば良いが使用する感光性樹脂に応じて適宜設定する。
【0017】
次に、露光後の基板をオーブンにて所定の温度で加熱し、露光された感光性樹脂膜を硬化し透明基板201上にドット状の凹凸樹脂膜202を形成する(図1参照)。加熱条件は樹脂膜が十分に硬化する条件でよい。
加熱すると、露光部に対し未露光部が低くなり、その結果ドットパターンに対応したドット状のなだらかな凹凸ができる。露光部と未露光部で相対的な高低差が生じるのは、露光部では感光性部材の反応が進むが、未露光部では未反応物が多く加熱によりこれが蒸発霧散するためと考えられる。この方法による凹凸の断面形状は走査電子顕微鏡観察によると正弦的な連続的曲線で構成されている。凹凸の段差は、膜厚を厚くしたり、露光量を増やすことによりある程度制御可能であるが、概ね50Å〜1μmで制御することが出来る。
【0018】
次に、ドット状の凹凸樹脂膜202上にITOからなる透明電極203を形成し、EL層(204、205)及び金属電極206を形成して本発明の有機エレクトロルミネセンス表示素子を作製する(図1参照)。
ここで、透明電極としてはITOの他IZO(Indium Zinc Oxide)やAluminum Zinc Oxide などが使用できる。
EL層としては、9,10−ジアリールアントラセン誘導体、サリチル酸塩、ピレン、コロネン、ペリレン、ルブレン、テトラフェニルブタジエン、9,10−ビス(フェニルエチニル)アントラセン、8−キノリノラートリチウム、トリス(8−キノリノラート)アルミニウム錯体(以下Alqと略す)、N,N’−ジフェニル−N,N’−ビス(3−メチルフェニル)−ベンジジン(以下TPDと略す)、トリス(5,7−ジクロロ、8−キノリノラート)アルミニウム錯体、トリス(5−クロロ−8キノリノラート)アルミニウム錯体、ビス(8−キノリノラート)亜鉛錯体、トリス(5−フルオロ−8−キノリノラート)アルミニウム錯体、トリス(4−メチル−5−トリフルオロメチル−8−キノリノラート)アルミニウム錯体、トリス(4−メチル−5−シアノ−8−キノリノラート)アルミニウム錯体、ビス〔8−(パラートシル)アミノキノリン〕亜鉛錯体及びカドミウム錯体、1,2,3,4−テトラフェニルシクロペンタジエン、ペンタフェニルシクロペンタジエン、ポリ−2,5−ジヘプチルオキシ−P−フェニレンビニレン、あるいは特開平4―31488号公報、米国特許5141671号、同4769292号で言及されている蛍光物質やN, N’ジアリール置換ピロロピロール化合物等があげられるが、上記例に特に限定されるものではない。 金属電極としては、アルミニウムの他MgAg、AlLi、CuLiなどが使用できる。
【0019】
【実施例】
以下実施例により本発明を詳細に説明する。
まず、エポキシ樹脂(YDPN−601:東都化成(株)製)390g及びアクリル酸108gを1,6−ヘキサンジオールアクリレート750g中に溶解させてハイドロキノン0.5g及びメチルエチルアンモニウムアイオダイド3gの存在下に100〜150℃で2時間反応させた。ついで、無水ヘッド酸279gを添加し、100〜150℃で2時間反応させて、水溶性光重合性オリゴマーを得た。
【0020】
次に、得られた水溶性光重合性オリゴマー100重量部、非水溶性光重合性オリゴマーとしてフェノールノボラック型エポキシ樹脂(YDCN−602:東都化成(株)製)40重量部、光重合性モノマーとしてトリメチロールプロパントリアクリレート(TMP−A:共栄社油脂(株)製)20重量部、光重合開始剤としてイルガキュア−651(チバガイギー社製)5重量部、光硬化用触媒前駆体としてジフェニルヨードニウムヘキサフルオロアンチモネート0.5重量部及び重合禁止剤としてハイドロキノン0.1重量部を酢酸ブチルセロソルブ1000重量部中で混合して、ネガ型感光性樹脂溶液を得た。
【0021】
次に、ガラス基板201上に上記ネガ型感光性樹脂溶液をスピンコート法で塗布し、70℃で30分乾燥し膜厚1.6μmの感光性樹脂膜を形成した。直径8μmのドットパターンが一面にランダムに配置されているフォトマスクを用いて、感光性樹脂膜を50mJ/cm2 の露光量で露光し、150℃で1時間加熱し、ドット状の凹凸樹脂膜202を形成した。ドット状の凹凸樹脂膜202表面を走査型電子顕微鏡で観察したところ高さ2000Åのドット状のなだらかな凹凸が形成されていた。
【0022】
次に、ドット状の凹凸樹脂膜202上に、スパッタ法によりITO膜を2000Å形成し、所定のフォトリソグラフィ法によって、パターニング処理してストライプ状の透明電極203を形成した。透明電極203表面を走査型電子顕微鏡で観察したところ、下地の形状を反映したドット状のなだらかな凹凸が形成されていた。
【0023】
次に、蒸着法により、透明電極203上にTPDからなる正孔輸送層204及びAlqからなる電子輸送発光層205のEL層を形成し、さらに、アルミニウム膜からなる金属電極206を形成し、エポキシ樹脂で表示素子全体を封止して本発明のEL表示素子を得た。
【0024】
得られたEL表示素子を透明電極側から見たところ、金属電極の鏡面反射による像の写り込みは見られなかった。電力を印加したところ、凹凸に起因するような電極の短絡、断線は見られなかった。
【0025】
【発明の効果】
上記したように、本発明のEL表示素子は透明基板上に位置的にランダムなドット状のなだらかな凹凸を形成して、透明電極、EL層及び金属電極を形成するので、金属電極の鏡面反射による像の写り込みを防止でき、発光効率の良い表示品質の優れたEL表示素子を得ることができる。
また、ドット状のなだらかな凹凸は感光性樹脂膜をランダムに配置されたドットパターンの露光と加熱硬化により形成できるので、ドット状の凹凸サイズ及び形状を容易に制御でき、結果として金属電極の鏡面反射による像の写り込み防止効果の最適化が図れる。
さらにまた、ドット状の凹凸は感光性樹脂膜のパターン露光、加熱処理にて形成できるので、現像工程が不要になり、より簡単な工程で形成できる。
【図面の簡単な説明】
【図1】 本発明の有機エレクトロルミネッセンス表示素子の一実施例を示す模式部分断面図である。
【符号の説明】
201……透明基板
202……ドット状の凹凸樹脂膜
203……透明電極
204……正孔輸送層
205……電子注入発光層
206……金属電極[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an organic electroluminescence display element.
[0002]
[Prior art]
Organic electroluminescence display elements (hereinafter referred to as EL display elements) are attracting attention as self-luminous display elements that are excellent in viewing angle and response speed and are thin and light.
In general, an EL display element has a transparent electrode for extracting fluorescence on the front surface and a metal electrode on the back surface, and has an organic light emitting layer (electroluminescence layer, hereinafter referred to as EL layer) therebetween. The EL layer is often composed of a plurality of thin films such as a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. In some cases, a dielectric layer is provided between the electrode and the EL layer. In any case, the EL display element is a laminate of a plurality of thin films, and a method for producing the EL display element is to form a transparent electrode, an EL layer, and a metal electrode on a transparent substrate in sequence by vapor deposition or sputtering. is there.
[0003]
In many cases, ITO (Indium Tin Oxide) is used as a transparent electrode for extracting light emission of EL, but it is necessary to heat at the time of film formation. Since the EL layer is an organic material and the interface between the layers is important, thermal deterioration and melting must be avoided. On the other hand, a metal (for example, aluminum) electrode can be formed while suppressing heating of the substrate. For this reason, a transparent electrode is first provided on a transparent substrate, and an EL layer and a metal electrode are usually laminated thereon.
[0004]
The thickness of the EL layer is as thin as 1500 mm or less even when laminated. Therefore, light from the outside easily passes through the EL layer. Since the EL layer and the metal electrode are stacked on a flat substrate, the metal electrode is also flat and has a mirror surface. Therefore, external light that has passed through the EL layer is mirror-reflected by the metal electrode and returned to the front surface. Therefore, the EL display element causes a reflection of an image like a mirror, and has a problem that display visibility is remarkably impaired.
[0005]
In order to solve the problem of image reflection due to specular reflection of the metal electrode, several methods are conceivable. One is to provide an antireflection film such as a scattering plate on the front surface of the EL display element to suppress the introduction of external light and image formation to the EL display element. One is to provide a polarizing plate and a wave plate on the front surface of the EL display element to confine the reflected light of the outside light in the EL display element. In either case, some kind of optical filter is provided on the front surface of the EL display element, and the loss of EL emission and display blur due to this are inevitable problems.
[0006]
The other is to change the metal electrode to a low reflectivity material. However, in this configuration, there is an EL light emission reflection loss at the back metal electrode, and there is a problem that the light use efficiency is deteriorated. In order to increase the use efficiency of light emission, it is necessary to reflect the EL light emission by the back metal electrode and take it out to the front. The other is that both electrodes sandwiching the EL layer are transparent electrodes, and a diffuse reflector is provided on the back surface of the EL display element. In this case, since there is a distance between the light emitting unit and the reflecting plate, there is a problem of parallax and color blurring occurs. Neither method is the best solution for the image reflection problem.
[0007]
In order to efficiently extract EL light emission as a display, it is necessary to reflect the light emitted from the back surface by a metal electrode and at the same time avoid reflection of an image. For this purpose, it is effective to reduce the flatness of the metal electrode to eliminate the mirror surface. As a result, it is possible to avoid reflection of the image without reducing the reflectance.
[0008]
Since it is desirable that the EL layer and the metal electrode are in complete contact with each other to inject electrons, the flatness of the metal electrode alone cannot be reduced. Similarly, in order to inject holes, the EL layer and the transparent electrode need to be in complete contact. Therefore, in order to reduce the flatness of the metal electrode, the flatness of the entire laminate of the transparent electrode, the EL layer, and the metal electrode must be lowered. To that end, the flatness of the base may be lowered.
[0009]
However, it does not mean that the flatness of the substrate should simply be lowered. For example, the surface of a frosted glass obtained by treating the glass surface with hydrofluoric acid may be too light scattered and display may be blurred. When an appropriate pattern is formed on the glass surface by photolithography, there is a problem in that the cross-sectional shape of the pattern has corners, and if it is laminated on this, the upper and lower electrodes are likely to be short-circuited or disconnected. It is necessary to control the shape of the surface in a simpler way. Although the embossing method of embossing on the substrate surface can be considered, there is a problem that the equipment investment is expensive because a high-accuracy embossing plate and a pressing device are required to perform accurately with a large area.
[0010]
[Problems to be solved by the invention]
The present invention has been devised in view of the above problems, and an object of the present invention is to provide an EL display element that prevents reflection of an image due to specular reflection of a metal electrode and has high luminous efficiency.
[0011]
[Means for Solving the Problems]
In order to solve the above problems in the present invention, first, in claim 1, an organic electroluminescence display element comprising a plurality of anode electrodes, an organic electroluminescence layer and a cathode electrode laminated in this order on a transparent substrate. In the method, at least
(A) applying a photosensitive resin solution on a transparent substrate;
(B) drying the photosensitive resin solution to form a photosensitive resin film;
(C) on the photosensitive resin film, using a photomask in which dot-like patterns are randomly distributed in position, and exposing,
(D) heating the photosensitive resin film after exposure without developing it to cure the photosensitive resin film, and forming a dot-shaped uneven resin film on the transparent substrate;
(E) forming a transparent electrode, an EL layer, and a metal electrode in this order on the concavo-convex resin film;
It is set as the manufacturing method of the organic electroluminescent display element characterized by including these.
[0012]
2. The organic electroluminescence display element according to claim 1, wherein the dot-shaped irregularities are formed by a gentle curved surface having a dot diameter of 10 μm or less and a height of 500 mm or more . This is a manufacturing method .
[0013]
Furthermore, in Claim 3, the said dot-shaped unevenness | corrugation is formed by pattern-exposing and heat-hardening the photosensitive resin film on the said transparent substrate, The Claim 1 or 2 characterized by the above-mentioned. This is a method for manufacturing an organic electroluminescence display element .
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described.
As a result of intensive studies on a method for preventing the reflection of an image due to specular reflection of metal, the inventors of the present invention formed gentle irregularities in the form of dots on a transparent substrate to form a transparent electrode, an EL layer, and a metal electrode. It was found that the reflection of the image due to specular reflection can be prevented. Specifically, when forming a transparent electrode, an EL layer, and a metal electrode by forming randomly arranged dot-like irregularities composed of gentle curved surfaces having a dot diameter of 10 μm or less and a height of 500 mm or more Image reflection due to specular reflection of the metal electrode can be prevented.
[0015]
Specifically, first, a photosensitive resin solution is applied on the
[0016]
Next, it exposes using the photomask which has a predetermined dot pattern on the photosensitive resin film. Here, the photomask is a pattern in which dot-like patterns are randomly distributed. The dot pattern diameter may be 10 μm or less, but is appropriately set according to the photosensitive resin used.
[0017]
Next, the exposed substrate is heated in an oven at a predetermined temperature, and the exposed photosensitive resin film is cured to form a dot-shaped
When heated, the unexposed part becomes lower than the exposed part, and as a result, gentle irregularities of dots corresponding to the dot pattern are formed. The reason why the relative height difference occurs between the exposed portion and the unexposed portion is considered that the reaction of the photosensitive member proceeds in the exposed portion, but there are many unreacted substances in the unexposed portion, and this is evaporated by heating. The cross-sectional shape of the irregularities by this method is constituted by a sinusoidal continuous curve according to scanning electron microscope observation. The uneven step can be controlled to some extent by increasing the film thickness or increasing the amount of exposure, but can be generally controlled at 50 to 1 μm.
[0018]
Next, a
Here, as the transparent electrode, ITO, IZO (Indium Zinc Oxide), Aluminum Zinc Oxide, or the like can be used.
As the EL layer, 9,10-diarylanthracene derivative, salicylate, pyrene, coronene, perylene, rubrene, tetraphenylbutadiene, 9,10-bis (phenylethynyl) anthracene, 8-quinolinolatolithium, tris (8- Quinolinolate) Aluminum complex (hereinafter abbreviated as Alq), N, N′-diphenyl-N, N′-bis (3-methylphenyl) -benzidine (hereinafter abbreviated as TPD), Tris (5,7-dichloro, 8-quinolinolate) ) Aluminum complex, tris (5-chloro-8quinolinolato) aluminum complex, bis (8-quinolinolato) zinc complex, tris (5-fluoro-8-quinolinolato) aluminum complex, tris (4-methyl-5-trifluoromethyl-) 8-quinolinolato) aluminum complex, (4-methyl-5-cyano-8-quinolinolato) aluminum complex, bis [8- (palatosyl) aminoquinoline] zinc complex and cadmium complex, 1,2,3,4-tetraphenylcyclopentadiene, pentaphenylcyclopentadiene , Poly-2,5-diheptyloxy-P-phenylene vinylene, or fluorescent substances and N, N ′ diaryl substituted pyrrolopyrrole compounds mentioned in JP-A-4-31488, US Pat. Nos. 5,141,671 and 4,769,292 However, it is not particularly limited to the above example. As the metal electrode, MgAg, AlLi, CuLi or the like can be used in addition to aluminum.
[0019]
【Example】
Hereinafter, the present invention will be described in detail by way of examples.
First, 390 g of epoxy resin (YDPN-601: manufactured by Tohto Kasei Co., Ltd.) and 108 g of acrylic acid were dissolved in 750 g of 1,6-hexanediol acrylate, and in the presence of 0.5 g of hydroquinone and 3 g of methylethylammonium iodide. It was made to react at 100-150 degreeC for 2 hours. Subsequently, 279 g of anhydrous head acid was added and reacted at 100 to 150 ° C. for 2 hours to obtain a water-soluble photopolymerizable oligomer.
[0020]
Next, 100 parts by weight of the obtained water-soluble photopolymerizable oligomer, 40 parts by weight of a phenol novolac type epoxy resin (YDCN-602: manufactured by Toto Kasei Co., Ltd.) as a water-insoluble photopolymerizable oligomer, as a photopolymerizable monomer 20 parts by weight of trimethylolpropane triacrylate (TMP-A: manufactured by Kyoeisha Yushi Co., Ltd.), 5 parts by weight of Irgacure-651 (manufactured by Ciba Geigy) as a photopolymerization initiator, and diphenyliodonium hexafluoroantimony as a photocuring catalyst precursor A negative photosensitive resin solution was obtained by mixing 0.5 parts by weight of Nate and 0.1 parts by weight of hydroquinone as a polymerization inhibitor in 1000 parts by weight of butyl cellosolve.
[0021]
Next, the negative photosensitive resin solution was applied onto the
[0022]
Next, 2000 mm of ITO film was formed on the dot-shaped
[0023]
Next, an EL layer of a
[0024]
When the obtained EL display element was viewed from the transparent electrode side, no reflection of an image due to specular reflection of the metal electrode was observed. When power was applied, no short circuit or disconnection of the electrode due to unevenness was observed.
[0025]
【The invention's effect】
As described above, the EL display element of the present invention forms gentle irregularities in the form of random dots on a transparent substrate to form a transparent electrode, an EL layer, and a metal electrode. Therefore, it is possible to obtain an EL display element with excellent light emission efficiency and display quality.
In addition, since the dot-shaped gentle irregularities can be formed by exposure and heat curing of the dot pattern in which the photosensitive resin film is randomly arranged, the size and shape of the dot-shaped irregularities can be easily controlled, resulting in the mirror surface of the metal electrode The effect of preventing reflection of an image due to reflection can be optimized.
Furthermore, since the dot-like irregularities can be formed by pattern exposure and heat treatment of the photosensitive resin film, the development process is not required and can be formed by a simpler process.
[Brief description of the drawings]
FIG. 1 is a schematic partial cross-sectional view showing one embodiment of an organic electroluminescence display element of the present invention.
[Explanation of symbols]
201 ……
Claims (3)
をこの順に積層してなる有機エレクトロルミネッセンス表示素子の製造方法において、少
なくとも、
(a)透明基板上に感光性樹脂溶液を塗布する工程と、
(b)前記感光性樹脂溶液を乾燥し、感光性樹脂膜を形成する工程と、
(c)前記感光性樹脂膜上に、ドット状のパターンが位置的にランダムに分布しているフォトマスクを用いて、露光する工程と、
(d)露光後の前記感光性樹脂膜を現像せずに加熱することで、前記感光性樹脂膜を硬化させ、前記透明基板上にドット状の凹凸樹脂膜を形成する工程と、
(e)前記凹凸樹脂膜上に透明電極、EL層、金属電極をこの順に形成する工程と、
を含むことを特徴とする有機エレクトロルミネッセンス表示素子の製造方法。In the method for producing an organic electroluminescence display element comprising a plurality of anode electrodes, an organic electroluminescence layer and a cathode electrode laminated in this order on a transparent substrate,
(A) applying a photosensitive resin solution on a transparent substrate;
(B) drying the photosensitive resin solution to form a photosensitive resin film;
(C) on the photosensitive resin film, using a photomask in which dot-like patterns are randomly distributed in position, and exposing,
(D) heating the photosensitive resin film after exposure without developing it to cure the photosensitive resin film, and forming a dot-shaped uneven resin film on the transparent substrate;
(E) forming a transparent electrode, an EL layer, and a metal electrode in this order on the concavo-convex resin film;
The manufacturing method of the organic electroluminescent display element characterized by including.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8809842B2 (en) | 2012-01-09 | 2014-08-19 | Samsung Display Co., Ltd. | Donor film, method for manufacturing organic light emitting diode display using the same, and organic light emitting diode display manufactured by using the method |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4491942B2 (en) * | 2000-09-19 | 2010-06-30 | 凸版印刷株式会社 | ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME |
JP4053260B2 (en) | 2000-10-18 | 2008-02-27 | シャープ株式会社 | Organic electroluminescence display element |
KR100731033B1 (en) * | 2000-12-27 | 2007-06-22 | 엘지.필립스 엘시디 주식회사 | Electro luminescence device and method for manufacturing the same |
US6717359B2 (en) | 2001-01-29 | 2004-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
US20040119400A1 (en) * | 2001-03-29 | 2004-06-24 | Kenji Takahashi | Electroluminescence device |
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TWI612689B (en) | 2013-04-15 | 2018-01-21 | 半導體能源研究所股份有限公司 | Light-emitting device |
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WO2015189735A1 (en) | 2014-06-13 | 2015-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP6767945B2 (en) * | 2017-08-17 | 2020-10-14 | 株式会社神戸製鋼所 | Metal substrate for electronic devices |
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Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4774435A (en) * | 1987-12-22 | 1988-09-27 | Gte Laboratories Incorporated | Thin film electroluminescent device |
US5072152A (en) * | 1990-02-05 | 1991-12-10 | Planar Systems, Inc. | High brightness TFEL device and method of making same |
JP3247148B2 (en) * | 1992-06-18 | 2002-01-15 | パイオニア株式会社 | Electroluminescence element |
JPH07198919A (en) * | 1993-12-28 | 1995-08-01 | Nec Corp | Production of reflector |
US5485055A (en) * | 1994-07-11 | 1996-01-16 | Alliedsignal Inc. | Active matrix electroluminescent display having increased brightness and method for making the display |
KR19990007825A (en) * | 1995-04-25 | 1999-01-25 | 하루타히로시 | Organic electroluminescent devices |
JP3584575B2 (en) * | 1995-10-13 | 2004-11-04 | ソニー株式会社 | Optical element |
JPH1010525A (en) * | 1996-06-19 | 1998-01-16 | Sharp Corp | Reflection type substrate, its manufacture and reflection type liquid crystal display device |
JP3213242B2 (en) * | 1996-10-23 | 2001-10-02 | シャープ株式会社 | Reflection plate, reflection type liquid crystal display device and method of manufacturing the same |
JPH10199677A (en) * | 1997-01-16 | 1998-07-31 | Denso Corp | Manufacture of element |
JPH118070A (en) * | 1997-06-17 | 1999-01-12 | Casio Comput Co Ltd | Display device |
JPH10186359A (en) * | 1998-01-12 | 1998-07-14 | Sharp Corp | Reflection type liquid crystal display device |
JP2991183B2 (en) * | 1998-03-27 | 1999-12-20 | 日本電気株式会社 | Organic electroluminescence device |
JPH11329742A (en) * | 1998-05-18 | 1999-11-30 | Idemitsu Kosan Co Ltd | Organic electroluminescent(el) element and light emitting device |
JPH11354275A (en) * | 1998-06-04 | 1999-12-24 | Toyota Motor Corp | 3d display el element |
-
1998
- 1998-07-23 JP JP20781098A patent/JP4352474B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8809842B2 (en) | 2012-01-09 | 2014-08-19 | Samsung Display Co., Ltd. | Donor film, method for manufacturing organic light emitting diode display using the same, and organic light emitting diode display manufactured by using the method |
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