JP4331200B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof. More specifically, the present invention relates to a semiconductor device in which a transistor is manufactured using a polycrystalline semiconductor crystallized by laser light irradiation and a manufacturing method thereof. The present invention also relates to a semiconductor device using the transistor for a pixel and a manufacturing method thereof.

  In recent years, portable devices such as PDAs, mobile phones, and notebook PCs are widely used. Such devices are equipped with flat panel displays. As the flat panel display, an STN liquid crystal display, an amorphous silicon TFT (amorphous silicon thin film transistor) liquid crystal display, or the like is often employed. However, recently, a low-temperature polysilicon (polycrystalline silicon) TFT type liquid crystal display having a built-in drive circuit on a glass substrate is often mounted. Furthermore, not a liquid crystal display but a light emitting display (such as an EL display) using a low-temperature polysilicon TFT is expected to be mounted as a flat panel display.

  FIG. 26 shows an example of a pixel circuit of a light-emitting display, and the operation will be briefly described. In the pixel circuit shown in FIG. 26, the current flowing through the light-emitting element 2602 (hereinafter referred to as a light-emitting current) is controlled by controlling Vgs (gate-source voltage) of the driving transistor 2601. The value of the light emission current and the luminance of the light emitting element are in a proportional relationship. Therefore, the luminance of the light emitting element can also be controlled by controlling the light emission current.

  A light-emitting element is formed using a wide variety of materials such as an organic material, an inorganic material, and a bulk material. Among them, organic light emitting diodes (OLEDs) mainly composed of organic materials are listed as typical light emitting elements. The light emitting element has an anode and a cathode, and a structure in which a light emitting layer is sandwiched between the anode and the cathode. The light emitting layer is made of one or more materials selected from the above materials. Luminescence in the light-emitting layer includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. The present invention can also be applied to the case where one or both light emission is used.

  FIG. 27A illustrates a circuit diagram including the light-emitting element 2602 and the driving transistor 2601. FIG. 27B illustrates the relationship between Vgs (gate-source voltage) of the driving transistor 2601 and the light-emitting current. Show. FIG. 27B shows two graphs. These show the case where the characteristics of the driving transistor 2601 are not the same. As shown in FIG. 27B, if the characteristics of the driving transistor 2601 vary, the light emission current varies even if the magnitude of Vgs is the same. Therefore, in order to display an image with accurate gradation, it is necessary to prevent the characteristics of the driving transistor 2601 from varying. If characteristics such as mobility and threshold voltage of the driving transistor 2601 vary, it becomes impossible to display an image with an accurate gradation.

  On the other hand, the low-temperature polysilicon TFT is characterized by being a high-performance TFT formed on a glass substrate. In order to improve the performance of a TFT, it is necessary to increase the crystallinity of a semiconductor (more specifically, a channel formation region) in the transistor.

  As a technique for improving the crystallinity of a semiconductor, a technique for crystallizing a semiconductor (polycrystallization or polysilicon) by irradiating a semiconductor in an amorphous state (amorphous state) with laser light is widely used. ing. When this method is used, high energy is applied only to the portion irradiated with the laser beam, so that it is not necessary to expose the entire substrate to a high temperature. A TFT formed by this method is called a low-temperature polysilicon TFT.

  In contrast, a TFT formed by a method of crystallizing a semiconductor layer by thermal annealing is called a high-temperature polysilicon TFT.

  By the way, as a laser used when forming a low-temperature polysilicon TFT, there are many excimer lasers, and a method of irradiating a glass substrate with linear laser light is often used as the laser irradiation method. By scanning the linear laser, the entire glass substrate is irradiated with laser light.

  FIG. 28 shows a schematic diagram of laser irradiation. The direction in which the linear laser 2801 is scanned is defined as the x direction. In FIG. 28, the linear laser is irradiated in parallel with the source driver, and the laser is scanned in parallel with the gate driver (see, for example, Patent Document 1).

Japanese Patent No. 2756530

  Next, an arrangement method of each pixel in the pixel portion in which a plurality of pixels are formed in a matrix will be described. In the pixel region 2802 in FIG. 28, a plurality of pixels are arranged in a matrix. In the case of a pixel portion that displays a monochrome image, the pixel portions are arranged at equal intervals in both the vertical direction and the horizontal direction. However, in the case of a pixel portion that displays a color image, there are various methods for arranging the R, G, and B pixels.

A method of arranging pixels corresponding to RGB colors will be described with reference to FIG.
FIG. 29A shows a vertical stripe arrangement in which pixels of the same color are arranged vertically, and FIG. 29B shows a delta arrangement in which pixels are shifted every half sub-pixel in each row.

  In the vertical stripe arrangement, when attention is paid to pixels corresponding to RGB colors, the length in the horizontal direction is one third of the length in the vertical direction. When the three pixels of RGB are one pixel, the length in the vertical direction and the length in the horizontal direction are the same, and the shape thereof is a square shape. That is, the pixel pitch N in the vertical direction and the horizontal direction in one pixel is the same length. In the delta arrangement, when attention is paid to pixels (sub-pixels) corresponding to RGB colors, the length in the horizontal direction is the same as the length in the vertical direction. That is, the shape of the pixel (subpixel) corresponding to each color is a square shape.

  As already described, a semiconductor crystallized by irradiation with a linear laser is used for the low-temperature polysilicon TFT. Here, the operation of the linear laser will be described using the intensity distribution of the laser light (FIG. 30) when the semiconductor is irradiated with the laser light by scanning the linear laser.

  First, a linear laser is irradiated at a certain position. In many cases, the intensity distribution of the laser light at this time has a mountain shape as shown in FIG. As an example, it often has a Gaussian distribution. Thereafter, the laser irradiation position is moved in the x direction by the laser scanning pitch M, and the linear laser beam is irradiated again. Next, the laser irradiation position is moved again in the x direction, and laser irradiation is performed. Thereafter, the same operation is repeated to irradiate the entire glass substrate with laser.

  At this time, as shown in FIG. 30, depending on the position in the x direction (laser scanning direction), there are regions where the semiconductor is irradiated with many laser beams, and there are regions where the laser beams are irradiated only several times. That is, the number of laser irradiations varies depending on the semiconductor region.

  Furthermore, the intensity of the laser light emitted from the laser is not always constant and varies. That is, even in a semiconductor with the same number of laser irradiations, the laser is not uniformly irradiated.

  As described above, when the number of laser irradiations and the intensity of laser light vary depending on the semiconductor region, the crystal state of the semiconductor crystallized by the laser also varies. When the crystal state of the semiconductor is different, the characteristics of the transistor using the semiconductor also vary.

  If a light-emitting display is manufactured using transistors whose characteristics vary, the characteristics of the driving transistor 2601 of each pixel vary. Such a light emitting display cannot display an image expressed with an accurate gradation.

  FIG. 31 shows a diagram in which a non-uniform image is displayed due to the influence of variation in characteristics of the driving transistor 2601. The non-uniform image is caused by variations in the number of laser irradiations to the semiconductor and the intensity of the irradiated laser light depending on the position in the x direction (laser scanning direction). As a result, a striped pattern parallel to the y direction (laser irradiation direction) is seen, and a trace of laser irradiation remains. Hereinafter, such image unevenness is referred to as laser stripes.

  An object of the present invention is to provide a semiconductor device and a manufacturing method thereof in which the above problems are solved. More specifically, it is an object of the present invention to provide a semiconductor device and a manufacturing method thereof in which the influence of variation in characteristics of transistors due to variation in the number of times of laser irradiation to the semiconductor and intensity of irradiated laser light is suppressed. Furthermore, it is an object of the present invention to provide a semiconductor device in which laser fringes are reduced and a manufacturing method thereof.

  In order to solve the above problems, the present invention provides a semiconductor device in which a plurality of pixels each including a transistor are provided in a matrix, and the transistor includes a semiconductor crystallized by laser light irradiation. The channel forming region is arranged in parallel to the laser scanning direction.

The present invention is a semiconductor device in which a plurality of pixels each including a transistor are provided in a matrix. The transistor includes a semiconductor crystallized by laser light irradiation, and a channel formation region of the transistor It is arranged parallel to the scanning direction and extends over a region longer than the pixel pitch.

  The present invention relates to a semiconductor device in which a plurality of pixels each including a transistor are provided in a matrix. The transistor includes a semiconductor crystallized by laser light irradiation, and the semiconductor is disposed across at least two pixels. The length of the semiconductor is longer than the pixel pitch of the pixel, the scanning pitch of the laser light is M, and when the pixel pitch of the pixel is N, the number of times the laser light is applied to the semiconductor is (N / M) times or more.

  The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor is crystallized by irradiating a laser beam, and a plurality of transistors formed using the crystallized semiconductor are provided in a matrix, each channel of the plurality of transistors The formation region is arranged to extend in a first direction, and among the plurality of transistors, at least two transistors adjacent in a second direction perpendicular to the first direction are in the second direction. And the plurality of transistors have the same characteristics.

  The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor is crystallized by irradiation with laser light, a transistor is formed using the crystallized semiconductor, and a plurality of pixels formed using the transistor are provided in a matrix. The semiconductor is disposed across at least two pixels, and the length of the semiconductor is longer than the pixel pitch of the pixel, the scanning pitch of the laser light is M, and the pixel pitch of the pixel is N In this case, the laser light is applied to the semiconductor at least (N / M) times.

  In the present invention, semiconductors are arranged in parallel to the x direction (laser scanning direction) in order to average the transistor characteristic variation due to the position in the x direction (laser scanning direction). By disposing the transistor in parallel with the x direction (laser scanning direction), the number of times of laser irradiation to the channel formation region of the transistor can be increased. As a result, since the influence due to the variation in the semiconductor crystal state caused by the variation in the number of times of laser irradiation can be reduced, the influence of the variation in characteristics of the transistor including the semiconductor can be suppressed.

  In the present invention, in order to increase the number of times of laser irradiation to the semiconductor, the semiconductor is arranged across at least two pixels. Then, the length of the semiconductor is arranged longer than the pixel pitch of the pixels. Thus, by increasing the size of the transistor, for example, by increasing the channel length L with respect to the channel width, variations in the transistor itself can be reduced.

  Note that when a semiconductor is irradiated with laser light, the width and length of the laser light and the laser scanning pitch are not particularly limited. However, in the present invention, since the number of times of laser irradiation to the semiconductor increases, it is preferable to widen the width of the laser beam. By doing so, it is possible to further reduce the influence due to variations in the crystalline state of the semiconductor. In the case where the length of the semiconductor is sufficiently long, the number of times of laser irradiation to the semiconductor can be sufficiently increased even if the laser scanning pitch is slightly increased, so that variations in transistors can be reduced. Thus, a semiconductor device can be manufactured without increasing the number of times of laser irradiation on the entire screen. As a result, the processing speed when manufacturing the semiconductor device is increased, so that manufacturing cost can be reduced.

  In the present invention, a plurality of transistors are arranged in a matrix, and each transistor includes a semiconductor crystallized by laser light irradiation. Each channel formation region of the plurality of transistors is arranged to extend in a first direction (laser scanning direction), and among the plurality of transistors, in a second direction perpendicular to the first direction. At least two adjacent transistors have a positional relationship shifted from each other in the first direction. Each of the semiconductors included in the plurality of transistors has a shape in which “” ”, which is an end point mark of a bracket, and“ “”, which is a start point mark, are combined, and is arranged across two pixels. . In this way, although the length of the channel formation region of each semiconductor included in the transistor is longer than the pixel pitch, the area occupied by the semiconductor in the pixel can be made as small as possible.

  In the present invention, semiconductors are arranged in parallel to the x direction (laser scanning direction) in order to average the transistor characteristic variation due to the position in the x direction (laser scanning direction). By disposing the transistor in parallel with the x direction (laser scanning direction), the number of times of laser irradiation to the channel formation region of the transistor can be increased. As a result, the influence of variation in the crystal state of the channel formation region in the transistor can be reduced, so that variation in transistor characteristics can be suppressed.

  In the present invention, in order to increase the number of times of laser irradiation to the semiconductor, the semiconductor is arranged across at least two pixels. Then, the length of the semiconductor is arranged longer than the pixel pitch of the pixels. Thus, by increasing the size of the transistor and increasing the channel length L with respect to the channel width, variations in the transistor itself can be reduced.

  In addition, if the pixel pitch is increased in the future, the length of the semiconductor can be increased, so that the number of laser irradiations can be increased. As a result, variations in the transistors including the semiconductor can be suppressed, so that the present invention can be expected to have a great effect.

  Note that when a semiconductor is irradiated with laser light, the width and length of the laser light and the laser scanning pitch are not particularly limited. However, in the present invention, since the number of times of laser irradiation to the semiconductor increases, it is preferable to widen the width of the laser beam. By so doing, the influence of variations in the crystal state of the channel formation region in the transistor can be further reduced, so that variations in transistor characteristics can be further suppressed. In the case where the length of the semiconductor is sufficiently long, the number of times of laser irradiation to the semiconductor can be sufficiently increased even if the laser scanning pitch is slightly increased, so that variations in transistors can be reduced. Thus, a semiconductor device can be manufactured without increasing the number of times of laser irradiation on the entire screen. As a result, the processing speed when manufacturing the semiconductor device is increased, so that manufacturing cost can be reduced.

Embodiment Mode 1 An embodiment mode of a semiconductor device of the present invention will be described with reference to FIGS. FIG. 1 shows a schematic diagram of the arrangement of transistors in a pixel. FIG. 1 shows three pixels of RGB arranged in stripes. However, when one pixel is considered as one color, it corresponds to nine pixels. In order to identify each pixel, in FIG. 1, the R color portion of the first pixel from the top is the pixel R (i-1), the G color portion is the pixel G (i-1), and the B color portion is the pixel. Called B (i-1). Similarly, the R color portion of the second pixel is the pixel R (i), the G color portion is the pixel G (i), the B color portion is the pixel B (i), and the R pixel portion of the third pixel is the pixel. The R (i + 1) and G color portions are referred to as pixels G (i + 1), and the B color portions are referred to as pixels B (i + 1).

  Each pixel has a transistor. For example, the pixel R (i-1) includes a transistor for driving a light-emitting element included in the pixel. This is referred to as a pixel R (i-1) drive transistor 101. Similarly, the pixel R (i) has a drive transistor 102 for the pixel R (i), and the pixel R (i + 1) has a drive transistor 103 for the pixel R (i + 1). The other pixels are similar to the above.

In the present embodiment, as shown in FIG. 1, the driving transistor of each pixel is arranged across the area of another pixel arranged around. In other words, the pixel R (i + 1) driving transistor 103 is disposed across the region of the pixel R (i).
Similarly, the drive transistor 102 for the pixel R (i) is disposed across the pixel R (i−1). As described above, in the present invention, a driving transistor included in a certain pixel is arranged across a pixel region arranged around the pixel.

  As a result, the length of the driving transistor can be made longer than the pixel pitch. Accordingly, since the laser scanning direction and the extending direction of the channel formation region of the transistor can be made parallel, the number of times of irradiating each driving transistor with the laser increases. Therefore, variation in transistor characteristics can be suppressed.

Here, as shown in FIG. The pixel pitch is N. As shown in FIG. 1, the length 104 of the transistor is Z.
Then, the number of times that one transistor is irradiated with laser is (Z / M) times. Here, since Z> N, (Z / M)> (N / M).

  As described above, according to the present invention, the number of times of laser irradiation to the transistor can be increased, so that variation in characteristics of the transistor can be suppressed. Further, when the length Z of the transistor is sufficiently long, the laser scanning pitch M can be made somewhat larger than before, so that the number of times of laser irradiation on the entire screen can be reduced. In FIG. 1, however, the transistor length Z extends over two pixels. Therefore, in order to increase the number of times of irradiation with respect to the transistor, it is preferable to set the scanning pitch M to 2 times or less. As a result, since the processing speed when manufacturing a semiconductor device is increased, manufacturing cost can be reduced.

  Next, FIG. 2 shows a layout diagram of pixels corresponding to FIG. In FIG. 2, only the pixel R (i) portion is shown as an example. A circuit diagram corresponding to FIG. 2 is shown in FIG. A cross-sectional view of FIG. 2 is shown in FIG. 2 to 4, the same reference numerals are used to indicate the same items.

  The features of the layout diagram shown in FIG. 2 include the following.

  First, a source wiring layer is used as a selection gate line in order to dispose a driving transistor of a certain pixel over a region of another pixel. By doing so, the selection gate line and the driving transistor can be crossed, so that they can be overlapped. As a result, the layout of the drive transistors can be easily performed.

  For example, in FIG. 2, the (i-1) -th row selection gate line 203 and the pixel R (i) drive transistor 102 are arranged so as to overlap each other. Therefore, it becomes easy to dispose the driving transistor across another pixel region.

  Further, the power supply lines can be overlapped with each other so as to intersect with the selection gate lines, and the overlapped portion can be formed with a gate wiring layer. For example, the j-th column power supply line 205 and the (i-1) -th row selection gate line 203 intersect with each other, and are arranged so as to overlap each other. Since the j-th column power supply line 205 at the intersection is formed of a gate wiring layer, the power supply line can cross the selection gate line.

  Since the power supply line intersects with the selection gate line, only the intersecting portion was formed with a gate wiring layer. However, the crossing portion of the power supply line may be formed of any wiring layer as long as it can cross the selection gate line.

  A feature other than the above is that the driving transistor is arranged in parallel with the power supply line or the source signal line. For example, the pixel R (i) drive transistor 102 is arranged in parallel with the power supply line and the source signal line. Therefore, a long transistor can be efficiently arranged in each pixel.

  Thus, by devising the arrangement of the selection gate line and the power supply line, the length of the driving transistor can be made longer than the pixel pitch. More specifically, the length of the channel formation region of the driving transistor can be made longer than the pixel pitch.

  As shown in FIG. 2, in the channel formation region of the driving transistor, a long region is a portion indicated by a long channel formation region 201 and a portion indicated by a long channel formation region 202. With respect to the driving transistor, the longest portion of the channel formation region is the sum of the portion indicated by the long channel formation region 201 and the portion indicated by the long channel formation region 202. The length of the channel formation region indicated by this sum is longer than the pixel pitch, more specifically, about twice as long as the pixel pitch. As a result, the number of times the transistor is irradiated with laser light increases, and variations in transistor characteristics can be reduced.

  Finally, points that are devised in the layout diagram shown in FIG. 2 will be described. It relates to the arrangement of the drive transistors. In FIG. 2, the pixel R (i) drive transistor 102 is disposed across the region of the pixel R (i−1). It is not arranged in the region of the pixel R (i + 1). This is to cope with noise from the selection gate line. That is, since the selection gate line and the driving transistor cross each other, noise may enter the driving transistor from the selection gate line. Therefore, if a signal is input to the pixel after the selection gate line intersecting with the driving transistor is selected, the influence of noise can be reduced.

  As described above, the example in which the transistor is arranged across the two pixels has been described with reference to FIGS. However, the present invention is not limited to this. A transistor may be arranged across two or more pixels.

  Therefore, as an example in which transistors are arranged over two or more pixels, a case where transistors are arranged over three pixels will be described with reference to FIG. In FIG. 5, the transistor length Z504 is about three times the pixel pitch N. FIG. 6 shows a pixel layout corresponding to FIG.

  By disposing the driving transistor as shown in FIGS. 5 and 6, the length of the transistor can be arbitrarily designed. As a result, the number of times the transistor is irradiated with laser light is increased, so that the influence of variations in crystal state in the channel formation region can be reduced.

  In this embodiment mode, the case of color display has been described. However, the present invention can also be applied to the case of monochrome display.

  In the present embodiment, the case of the stripe arrangement has been described. However, the present invention is not limited to this, and can also be applied to a case where they are arranged by another method such as delta arrangement.

  In the present embodiment, the case where the driving transistor is configured by only one transistor has been described. However, it is possible to operate in the same manner as one drive transistor using a plurality of transistors connected in series or in parallel. Therefore, the present invention can be applied to a transistor in which transistors are arranged correspondingly.

In this embodiment mode, as illustrated in FIG. 4, the transistor is described using a structure in which a gate electrode is formed above a channel formation region, that is, a so-called top gate transistor. However, as shown in FIG. 35, a transistor having any structure such as a structure in which a gate electrode is formed below a channel formation region, a so-called bottom gate structure, can be applied.
This is because the present invention does not depend on their structure.

  In this embodiment mode, the example in which the present invention is applied to the case where two transistors are included in one pixel of the selection transistor and the driving transistor is described as the circuit configuration of the pixel. However, the present invention can be applied to other circuit configurations. As an example, as shown in FIGS. 33 and 34, there are configurations described in JP-A-2001-343933, US 6229506 B1, JP-A-11-219146, JP-A-2001-147659, and the like. That is, the present invention does not depend on the circuit configuration. The present invention can be applied to any circuit configuration. However, when the present invention is applied to various circuit configurations, it is effective to apply the present invention to a transistor that affects performance or a transistor that is susceptible to variations.

  The features of the present invention other than those described above will be described below. In the semiconductor device of the present invention, a plurality of transistors are arranged in a matrix, and each transistor includes a semiconductor crystallized by laser light irradiation. Each channel formation region of the plurality of transistors is arranged to extend in the first direction, and among the plurality of transistors, at least two adjacent in a second direction perpendicular to the first direction. The transistors have a positional relationship shifted from each other in the first direction.

  The first direction corresponds to the scanning direction of the laser. In the case where the semiconductor is arranged so as to have a long channel length, the laser scanning direction corresponds to the charge movement direction in the channel formation region of the transistor. As an example for carrying out the present invention, a semiconductor having a shape as shown in the pixel R (i-1) drive transistor 101 in FIG. 1 or the pixel R (i-1) drive transistor 501 in FIG. As described above, a semiconductor is arranged across two or three pixels. In this way, although the channel length of each semiconductor included in the transistor is longer than the pixel pitch, the area occupied by the semiconductor in the pixel can be made as small as possible. Note that the shape of the semiconductor is not limited to the above, and any shape may be used as long as the semiconductor is arranged so that the length of the semiconductor is longer than the pixel pitch. Further, the channel forming region may be extended by the channel length L, the channel width W, or both.

[Embodiment Mode 2] In this embodiment mode, a case where the arrangement of driving transistors is different from that in Embodiment Mode 1 will be described with reference to FIGS. FIG. 7 shows a schematic diagram of the arrangement of transistors in a pixel.

  FIG. 7 shows a pixel in which the driving transistor of each pixel is arranged so as to extend over another pixel area arranged around the pixel. In FIG. 7, two transistors are connected in series or in parallel to perform the same function as one transistor. Accordingly, a pixel R (i + 1) driving transistor 2704 and a pixel R (i) driving transistor 1701 are arranged in the pixel R (i). The pixel R (i) drive transistor 2702 is disposed in the pixel R (i−1). The pixel R (i) drive transistor 1701 and the pixel R (i) drive transistor 2702 are electrically connected. As described above, in FIG. 7, a driving transistor included in a certain pixel is also arranged in the region of the upper pixel, and they are electrically connected.

  As a result, the length of the driving transistor corresponds to the sum of the electrically connected transistors. Therefore, the length of the driving transistor can be made longer than the pixel pitch. Therefore, if the laser scanning direction and the transistor are made parallel, the number of times of laser light irradiation to each driving transistor increases, so that the influence of variations in the crystal state of the semiconductor (more specifically, the channel formation region) can be reduced. And variations in transistor characteristics can be suppressed.

  Here, as shown in FIG. The pixel pitch is N. Let the length of the transistor be Z. Then, the number of times the transistor is irradiated with laser light is (Z / M) times. Here, since Z> N, (Z / M)> (N / M).

  In this manner, since the number of laser light irradiations on the semiconductor included in the transistor can be increased, variation in the transistor itself can be reduced. When the length Z of the transistor is sufficiently long, the laser scanning pitch M can be made somewhat larger than before, so that the number of times the entire screen is irradiated with laser light can be reduced. In FIG. 1, however, the transistor length Z extends over two pixels. Therefore, in order to increase the number of times of irradiation with respect to the transistor, it is preferable to set the scanning pitch M to 2 times or less. As a result, since a processing speed when manufacturing a semiconductor is increased, manufacturing can be performed in a short period of time, and manufacturing cost can be reduced.

  Next, FIG. 8 shows a layout diagram of pixels corresponding to FIG. In FIG. 8, only the pixel R (i) portion is shown as an example. A circuit diagram corresponding to FIG. 8 is shown in FIG. A cross-sectional view of FIG. 8 is shown in FIG. 7 to 9, the same reference numerals are used for the same parts.

  The following can be mentioned as features of FIG.

  First, in order to electrically connect a driving transistor arranged across a plurality of pixels, a wiring line is arranged by crossing selection gate lines. For example, over the (i-1) -th row selection gate line 803, the pixel R (i) drive transistor 1701 is connected to the pixel R (i-1) drive transistor. In order to cross over the selection gate line formed of the gate wiring layer, the wiring of the crossing part is formed of the source wiring layer. Therefore, a transistor with a long channel formation region can be provided.

  Another feature is that the drive transistor is arranged in parallel with the power supply line and the source signal line. For example, the pixel R (i) drive transistor 1701 and the like are arranged in parallel with the power supply line and the source signal line. Therefore, a transistor having a long channel formation region can be arranged efficiently.

  Thus, by devising the connection of the drive transistor, the length of the channel formation region of the drive transistor can be made longer than the pixel pitch. Here, two transistors are connected in series. Therefore, the length of the channel formation region corresponds to the sum of the channel formation regions of the two transistors.

  Heretofore, examples have been described in which transistors are arranged and connected to two pixels. However, the present invention is not limited to this. A transistor may be arranged over two or more pixels.

  Therefore, as an example in which transistors are arranged over two or more pixels, FIG. 11 shows a case where transistors are arranged and connected to three pixels.

  By arranging the transistors as shown in FIG. 11, the length of the transistors can be arbitrarily designed. As a result, the number of times the transistor is irradiated with laser light increases. When the number of times of laser light irradiation is increased, the influence of variation in the crystal state of the channel formation region in the transistor can be reduced, so that variation in characteristics of the transistor can be suppressed.

  In this embodiment mode, the case of color display has been described. However, the present invention can also be applied to the case of monochrome display.

  In the present embodiment, the case of the stripe arrangement has been described. However, the present invention is not limited to this, and can also be applied to a case where they are arranged by another method such as delta arrangement.

  In the present embodiment, the case where the driving transistor is configured by only one transistor has been described. However, it is possible to operate in the same manner as one drive transistor using a plurality of transistors connected in series or in parallel. Therefore, the present invention can be applied to a transistor in which transistors are arranged correspondingly.

  In this embodiment mode, as illustrated in FIG. 10, the transistor is described using a structure in which a gate electrode is formed above a channel formation region, that is, a so-called top gate transistor. However, as shown in FIG. 35, a transistor having any structure such as a structure in which a gate electrode is formed below a channel formation region, a so-called bottom gate structure, can be applied. This is because the present invention does not depend on their structure.

  In this embodiment mode, the example in which the present invention is applied to the case where two transistors are included in one pixel of the selection transistor and the driving transistor is described as the circuit configuration of the pixel. However, the present invention can be applied to other circuit configurations. As an example, as shown in FIGS. 33 and 34, there are configurations described in JP-A-2001-343933, US 6229506 B1, JP-A-11-219146, JP-A-2001-147659, and the like. That is, the present invention does not depend on the circuit configuration. The present invention can be applied to any circuit configuration. However, when the present invention is applied to various circuit configurations, it is effective to apply the present invention to a transistor that affects performance or a transistor that is susceptible to variations.

  The features of the present invention other than those described above will be described below. In the semiconductor device of the present invention, a plurality of transistors are arranged in a matrix, and each transistor includes a semiconductor crystallized by laser light irradiation. Note that when irradiating a semiconductor with laser light, the laser itself may be moved for irradiation, or the substrate itself may be moved for irradiation. Each channel formation region of the plurality of transistors is arranged to extend in the laser scanning direction, and among the plurality of transistors, at least two transistors adjacent in the direction perpendicular to the laser scanning direction are: It has a positional relationship shifted from each other in the scanning direction of the laser.

  In addition, each semiconductor included in a plurality of transistors has a shape that combines the end point mark “” ”and the start point mark“ “”, and is arranged across two or three pixels. Has been. In this way, although the channel length of each semiconductor included in the transistor is longer than the pixel pitch, the area occupied by the semiconductor in the pixel can be made as small as possible.

[Embodiment 3] In the above-described embodiment, the case where the arrangement of the transistors is devised has been described. In the present embodiment, a case where the arrangement of the selection gate lines is devised will be described with reference to FIGS. FIG. 12 shows a schematic diagram of the arrangement of transistors in a pixel. FIG. 12 shows pixels for two pixels arranged in stripes. However, when one pixel is considered as one color, it corresponds to six pixels. In order to identify each pixel, in FIG. 12, the R color portion of the first pixel from the top is called a pixel R1, the G color portion is called a pixel G1, and the B color portion is called a pixel B1. Similarly, the R color portion of the second pixel is called a pixel R2, the G color portion is called a pixel G2, and the B color portion is called a pixel B2.

  Each pixel has a transistor. For example, the pixel G1 includes a transistor for driving a light-emitting element included in the pixel. This is referred to as a pixel G1 driving transistor 1201. Similarly, the pixel G2 includes a drive transistor 1202 for the pixel G2. The other pixels are similar to the above.

  In the layout diagram shown in FIG. 12, two pixels are arranged in a pair, and the driving transistors of the upper pixel are arranged so as to extend over the region of the lower pixel. The drive transistors are arranged over the upper pixel region. That is, the pixel G1 driving transistor 1201 is disposed so as to extend over the region of the pixel G2. Similarly, the driving transistor 1202 for the pixel G2 is disposed over the region of the pixel G1.

  As a result, the length of the driving transistor can be made longer than the pixel pitch. Accordingly, since the laser scanning direction and the transistor extending direction can be made parallel, the number of times each driving transistor is irradiated with the laser increases. Therefore, variation in transistor characteristics can be suppressed.

  Here, as shown in FIG. The pixel pitch is N. Let the length of the transistor be Z. Then, the number of times the transistor is irradiated with laser light is (Z / M) times. Here, since Z> N, (Z / M)> (N / M).

  As described above, according to the present invention, the number of times of laser irradiation to the transistor can be increased, so that variations in the transistor itself can be reduced. Further, when the length Z of the transistor is sufficiently long, the laser scanning pitch M can be made somewhat larger than before, so that the number of times of laser irradiation on the entire screen can be reduced. In FIG. 1, however, the transistor length Z extends over two pixels. Therefore, in order to increase the number of times of irradiation with respect to the transistor, it is preferable to set the scanning pitch M to 2 times or less. As a result, since the processing speed when manufacturing a semiconductor device is increased, manufacturing cost can be reduced.

  Next, FIG. 13 shows a layout diagram of pixels corresponding to FIG. In FIG. 13, the pixel R1, the pixel R2, the pixel G1, and the pixel G2 are described as an example. A circuit diagram corresponding to FIG. 13 is shown in FIG. A cross-sectional view of FIG. 13 is shown in FIG. Note that, in FIGS. 13 to 15, the same reference numerals are used to indicate the same items.

  The features of the layout diagram shown in FIG. 13 include the following.

  First, in the upper pixel such as the pixel R1 and the pixel G1, the selection gate line and the selection transistor are arranged on the upper side. For example, the i-th row selection gate line 1303 and the pixel G1 selection transistor 1301 are arranged on the upper side in the pixel. On the other hand, in the lower pixels such as the pixel R2 and the pixel G2, the selection gate line and the selection transistor are arranged on the lower side. For example, the (i + 1) th row selection gate line 1305 and the pixel G2 selection transistor 1306 are arranged on the lower side of the pixel.

  As a result, the drive transistor can be arranged as it is in another pixel. That is, the driving transistor 1201 for the pixel G1 is arranged as it is in the region of the pixel G2. The pixel G2 driving transistor 1202 is also arranged as it is in the region of the pixel G1.

  Therefore, the position where the selection gate line and the selection transistor are arranged in the pixel region differs depending on the row. Furthermore, the arrangement of the drive transistors is different in which position in the pixel region. In addition, the ITO is different in the position in the pixel region. Since ITO serves as the anode electrode of the light emitting element, the region (more precisely, a region that is slightly smaller) becomes the light emitting region. Therefore, the arrangement of the light emitting area is different in which position in the pixel area is arranged.

  As other features, the driving transistor, for example, the driving transistor 1201 for the pixel G1 is arranged in parallel with the power supply line and the source signal line. Therefore, a long transistor can be arranged efficiently.

  Thus, by devising the arrangement of the selection gate line and the like, the length of the channel formation region of the driving transistor can be made longer than the pixel pitch.

  In this embodiment mode, the case of color display has been described. However, the present invention can also be applied to the case of monochrome display.

  In the present embodiment, the case of the stripe arrangement has been described. However, the present invention is not limited to this, and can also be applied to a case where they are arranged by another method such as delta arrangement.

  In the present embodiment, the case where the driving transistor is configured by only one transistor has been described. However, it is possible to operate in the same manner as one drive transistor using a plurality of transistors connected in series or in parallel. Therefore, the present invention can be applied to a transistor in which transistors are arranged correspondingly.

  In this embodiment mode, as illustrated in FIGS. 15A and 15B, the transistor is described using a structure in which a gate electrode is formed above a channel formation region, that is, a so-called top gate transistor. However, as shown in FIG. 35, a transistor having any structure such as a structure in which a gate electrode is formed below a channel formation region, a so-called bottom gate structure, can be applied. This is because the present invention does not depend on their structure.

  In this embodiment mode, the example in which the present invention is applied to the case where two transistors are included in one pixel of the selection transistor and the driving transistor is described as the circuit configuration of the pixel. However, the present invention can be applied to other circuit configurations. As an example, as shown in FIGS. 33 and 34, there are configurations described in JP-A-2001-343933, US 6229506 B1, JP-A-11-219146, JP-A-2001-147659, and the like. That is, the present invention does not depend on the circuit configuration. The present invention can be applied to any circuit configuration. However, when the present invention is applied to various circuit configurations, it is effective to apply the present invention to a transistor that affects performance or a transistor that is susceptible to variations.

[Embodiment Mode 4] In this embodiment mode, a case where drive transistors are arranged in a horizontal direction will be described with reference to FIGS. FIG. 16 shows a schematic diagram of arrangement of transistors in a pixel. FIG. 16 shows four pixels in a stripe arrangement. However, when one pixel is considered as one color, it corresponds to 12 pixels. In order to identify each pixel, in FIG. 16, the R color portion of the first pixel from the left is the pixel R (i), the G color portion is the pixel G (i), and the B color portion is the pixel B (i). . Similarly, the R color portion of the second pixel from the left is the pixel R (i + 1), the G color portion is the pixel G (i + 1), the B color portion is the pixel B (i + 1), 3 pixels The R color portion of the eye pixel is the pixel R (i + 2), the G color portion is the pixel G (i + 2), the B color portion is the pixel B (i + 2), the fourth pixel pixel The R color portion is referred to as a pixel R (i + 3), the G color portion is referred to as a pixel G (i + 3), and the B color portion is referred to as a pixel B (i + 3).

  Each pixel has a transistor. For example, the pixel R (i + 1) includes a transistor for driving a light-emitting element included in the pixel. This is referred to as a pixel R (i + 1) driving transistor 1604. The other pixels are similar to the above.

  In the present embodiment, as shown in FIG. 16, the driving transistor of each pixel extends in the horizontal direction and is arranged across the area of another pixel arranged horizontally. That is, the pixel R (i + 1) driving transistor 1604 includes the pixel G (i + 1), the pixel B (i + 1), the pixel R (i + 2), the pixel G (i + 2), and the pixel B ( i + 2). As described above, in FIG. 16, a driving transistor included in a certain pixel is arranged so as to straddle the pixel located beside the pixel.

  As a result, the length of the driving transistor can be made longer than the pixel pitch. Accordingly, since the laser scanning direction and the transistor extending direction can be made parallel, the number of times each driving transistor is irradiated with the laser increases. Therefore, variation in transistor characteristics can be suppressed.

  Here, as shown in FIG. The pixel pitch is N. Let the length of the transistor be Z. Then, the number of times the transistor is irradiated with laser is Z / M. Here, since Z> N, (Z / M)> (N / M).

  As described above, according to the present invention, the number of times of laser irradiation to the transistor can be increased, so that variations in the transistor itself can be reduced. Further, when the length Z of the transistor is sufficiently long, the laser scanning pitch M can be made somewhat larger than before, so that the number of times of laser irradiation on the entire screen can be reduced. In FIG. 1, however, the transistor length Z extends over two pixels. Therefore, in order to increase the number of times of irradiation with respect to the transistor, it is preferable to set the scanning pitch M to 2 times or less. As a result, since the processing speed when manufacturing a semiconductor device is increased, manufacturing cost can be reduced.

  Next, FIG. 17 shows a layout diagram of pixels corresponding to FIG. In FIG. 17, the pixel R (i + 2) is described as an example. If the layout is similar to this layout and is repeated, the layout of the entire pixel portion is completed. A circuit diagram corresponding to FIG. 17 is shown in FIG. In addition, the same code | symbol is used when referring to the same thing.

  The following can be mentioned as features of FIG.

  First, the driving transistor is arranged in parallel with the selection gate line. For example, each driving transistor is arranged in parallel with the j-th row selection gate line 1705. As a result, the length of the driving transistor can be easily increased.

  Thus, by devising the arrangement of the driving transistors, the length of the driving transistor, more precisely, the channel formation region of the driving transistor can be made longer than the pixel pitch.

  In the above, the example which has arrange | positioned the transistor over 2 pixels has been described. However, the present invention is not limited to this. A transistor may be disposed over two or more pixels.

  With this arrangement, the transistor length can be arbitrarily designed. As a result, the number of times of laser irradiation can be increased. When the number of laser irradiations is increased, the influence of variation in the crystal state of the channel formation region in the transistor can be reduced, so that variation in transistor characteristics can be suppressed.

  In this embodiment mode, the case of color display has been described. However, the present invention can also be applied to the case of monochrome display.

  In the present embodiment, the case of the stripe arrangement has been described. However, the present invention is not limited to this, and can also be applied to a case where they are arranged by another method such as delta arrangement.

  In the present embodiment, the case where the driving transistor is configured by only one transistor has been described. However, it is possible to operate in the same manner as one drive transistor using a plurality of transistors connected in series or in parallel. Therefore, the present invention can be applied to a transistor in which transistors are arranged correspondingly.

In this embodiment mode, as illustrated in FIG. 4, the transistor is described using a structure in which a gate electrode is formed above a channel formation region, that is, a so-called top gate transistor. However, as shown in FIG. 35, a transistor having any structure such as a structure in which a gate electrode is formed below a channel formation region, a so-called bottom gate structure, can be applied.
This is because the present invention does not depend on their structure.

  In this embodiment mode, the example in which the present invention is applied to the case where two transistors are included in one pixel of the selection transistor and the driving transistor is described as the circuit configuration of the pixel. However, the present invention can be applied to other circuit configurations. As an example, as shown in FIGS. 33 and 34, there are configurations described in JP-A-2001-343933, US 6229506 B1, JP-A-11-219146, JP-A-2001-147659, and the like. That is, the present invention does not depend on the circuit configuration. The present invention can be applied to any circuit configuration. However, when the present invention is applied to various circuit configurations, it is effective to apply the present invention to a transistor that affects performance or a transistor that is susceptible to variations.

[Embodiment Mode 5] In this embodiment mode, a case where a pixel arrangement is devised will be described with reference to FIGS. In a normal stripe arrangement, it is aligned horizontally with RGB. Therefore, FIG. 19 shows a schematic diagram of the arrangement of transistors in a pixel in the case where the pixels are vertically aligned with RGB. FIG. 19 shows pixels for four pixels in which RGB are arranged in a vertical stripe pattern. However, when one pixel is considered as one color, it corresponds to 12 pixels. In order to identify each pixel, in FIG. 19, the R color portion of the first pixel from the left is the pixel R (i-1), the G color portion is the pixel G (i-1), and the B color portion is the pixel. Called B (i-1). Similarly, the R color portion of the second pixel is the pixel R (i), the G color portion is the pixel G (i), the B color portion is the pixel B (i), and the R color of the third pixel is the R color. The portion is a pixel R (i + 1), the G color portion is a pixel G (i + 1), the B color portion is a pixel B (i + 1), and the R color portion of the fourth pixel is the pixel R. The (i + 2), G color portion is referred to as a pixel G (i + 2), and the B color portion is referred to as a pixel B (i + 2).

  Each pixel has a transistor. For example, the pixel R (i-1) includes a transistor for driving a light-emitting element included in the pixel. This is called a pixel R (i-1) driving transistor 1901. The other pixels are similar to the above.

  In the present embodiment, as shown in FIG. 19, the driving transistors of each pixel extend in the horizontal direction and are arranged across the area of another pixel arranged horizontally. That is, the drive transistor 1901 for the pixel R (i−1) is disposed so as to extend over the region of the pixel R (i). Similarly, the drive transistor 1902 for the pixel R (i) is disposed across the region of the pixel R (i + 1). As described above, the driving transistor included in a certain pixel in FIG. 19 is arranged so as to extend over the pixel region next to the pixel.

  Here, as shown in FIG. The pixel pitch is N. Let the length of the transistor be Z. Then, the number of times the transistor is irradiated with laser is Z / M. Here, since Z> N, (Z / M)> (N / M).

  Thus, since the number of times of laser irradiation can be increased, variation in the transistor itself can be reduced. On the contrary, when the length Z of the transistor is sufficiently long, the laser scanning pitch M can be made somewhat larger than before, so that the number of times of laser irradiation on the entire screen can be reduced. In FIG. 1, however, the transistor length Z extends over two pixels. Therefore, in order to increase the number of times of irradiation with respect to the transistor, it is preferable to set the scanning pitch M to 2 times or less. As a result, the processing speed is increased, and manufacturing can be performed in a short period of time, leading to cost reduction.

  Next, FIG. 20 shows a layout diagram of pixels corresponding to FIG. In FIG. 20, only the pixel R (i) is described as an example. A circuit diagram corresponding to FIG. 20 is shown in FIG. In FIG. 19 to FIG. 21, the same reference numerals are used to indicate the same components.

  The following can be mentioned as features of FIG.

  First, the driving transistor is arranged in parallel with the selection gate line. For example, each driving transistor is arranged in parallel with the j-th row selection gate line 2001. As a result, the length of the driving transistor can be easily increased.

  Further, the color of the pixel is aligned with RGB in the vertical direction. As a result, when the driving transistor is disposed in the lateral direction, the length of the driving transistor can be easily increased.

  Thus, by devising the arrangement of the driving transistors, the length of the driving transistor, more precisely, the channel formation region of the driving transistor can be made longer than the pixel pitch.

  In the above, the example which has arrange | positioned the transistor over 2 pixels has been described. However, the present invention is not limited to this. A transistor may be disposed over two or more pixels.

  Thus, FIG. 22 shows a case where transistors are arranged over three pixels as an example in which transistors are arranged over two or more pixels.

  By arranging in this way, the length of the transistor can be designed to be arbitrarily long. As a result, the number of times of laser irradiation increases. When the number of times of laser irradiation is increased, the influence of variation in the crystal state of the channel formation region in the transistor can be reduced, so that variation in transistor characteristics can be suppressed.

  In this embodiment mode, the case of color display has been described. However, the present invention can also be applied to the case of monochrome display.

  In the present embodiment, the case of the stripe arrangement has been described. However, the present invention is not limited to this, and can also be applied to a case where they are arranged by another method such as delta arrangement.

  In the present embodiment, the case where the driving transistor is configured by only one transistor has been described. However, it is possible to operate in the same manner as one drive transistor using a plurality of transistors connected in series or in parallel. Therefore, the present invention can be applied to a transistor in which transistors are arranged correspondingly.

  In this embodiment mode, as illustrated in FIGS. 15A and 15B, the transistor is described using a structure in which a gate electrode is formed above a channel formation region, that is, a so-called top gate transistor. However, as shown in FIG. 35, a transistor having any structure such as a structure in which a gate electrode is formed below a channel formation region, a so-called bottom gate structure, can be applied. This is because the present invention does not depend on their structure.

  In this embodiment mode, the example in which the present invention is applied to the case where two transistors are included in one pixel of the selection transistor and the driving transistor is described as the circuit configuration of the pixel. However, the present invention can be applied to other circuit configurations. As an example, as shown in FIGS. 33 and 34, there are configurations described in JP-A-2001-343933, US 6229506 B1, JP-A-11-219146, JP-A-2001-147659, and the like. That is, the present invention does not depend on the circuit configuration. The present invention can be applied to any circuit configuration. However, when the present invention is applied to various circuit configurations, it is effective to apply the present invention to a transistor that affects performance or a transistor that is susceptible to variations.

  The features of the present invention other than those described above will be described below. In the semiconductor device of the present invention, a plurality of transistors are arranged in a matrix, and each transistor includes a semiconductor crystallized by laser light irradiation. Each channel formation region of the plurality of transistors is arranged to extend in the first direction, and among the plurality of transistors, at least two adjacent in a second direction perpendicular to the first direction. The transistors have a positional relationship shifted from each other in the first direction.

The first direction corresponds to the scanning direction of the laser. In the case where the semiconductor is arranged so as to have a long channel length, the laser scanning direction corresponds to the charge movement direction in the channel formation region of the transistor. As an example for carrying out the present invention, a semiconductor having a shape as shown in the pixel R (i-1) drive transistor 101 in FIG. 1 or the pixel R (i-1) drive transistor 501 in FIG. As described above, a semiconductor is arranged across two or three pixels. In this way, although the channel length of each semiconductor included in the transistor is longer than the pixel pitch, the area occupied by the semiconductor in the pixel can be made as small as possible. Note that the shape of the semiconductor is not limited to the above, and any shape may be used as long as the semiconductor is arranged so that the length of the semiconductor is longer than the pixel pitch. Further, the channel forming region may be extended by the channel length L, the channel width W, or both.

  In the sectional views so far, only the ITO layer has been shown. Therefore, next, a cross-sectional view including the light emitting element portion is shown. FIG. 23 shows a cross-sectional view when light is emitted downward, that is, toward the glass. FIG. 24 shows a cross-sectional view when light is emitted upward.

  In FIG. 23, a light emitting layer 2301 is formed on ITO. On top of that, a cathode 2302 is formed. A material manufactured by a known technique is formed on the light-emitting layer 2301.

  As an example of the light-emitting layer 2301, a layer in which a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and the like are stacked is often used.

  In FIG. 24, a light emitting layer is formed on the anode wiring. In addition, a cathode capable of transmitting light, that is, a light-transmitting cathode 2401 is used. However, the anode and the cathode may be reversed, and the anode may be formed in this layer.

This cross-sectional structure can be manufactured using a known technique. Further, the present embodiment can be applied to the above-described first to fifth embodiments.
Thereby, the semiconductor device of the present invention can display an image.

  A light-emitting device using a light-emitting element, such as a light-emitting display, is self-luminous, and thus has superior visibility in a bright place and a wide viewing angle compared to a liquid crystal display. Therefore, it can be used for display portions of various electronic devices.

  As an electronic device using a light emitting display to which the present invention is applied, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, an audio playback device (car audio, audio component, etc.), a notebook personal computer, a game A device, a portable information terminal (mobile computer, mobile phone, portable game machine, electronic book, etc.), an image playback device equipped with a recording medium (specifically, a recording medium such as a digital versatile disc (DVD)) And a device having a display capable of displaying an image). In particular, it is desirable to use a light-emitting device for a portable information terminal that often has an opportunity to see a screen from an oblique direction because the wide viewing angle is important. Specific examples of these electronic devices are shown in FIGS.

  FIG. 25A shows a display device, which includes a housing 3001, a support base 3002, a display portion 3003, a speaker portion 3004, a video input terminal 3005, and the like. A light-emitting display to which the present invention is applied can be used for the display portion 3003. Since the light-emitting device is a self-luminous type, a backlight is not necessary and a display portion thinner than a liquid crystal display can be obtained. The display devices include all information display devices for personal computers, for receiving TV broadcasts, for displaying advertisements, and the like.

  FIG. 25B shows a digital still camera, which includes a main body 3101, a display portion 3102, an image receiving portion 3103, operation keys 3104, an external connection port 3105, a shutter 3106, and the like. A semiconductor device to which the present invention is applied can be used for the display portion 3102.

  FIG. 25C illustrates a laptop personal computer, which includes a main body 3201, a housing 3202, a display portion 3203, a keyboard 3204, an external connection port 3205, a pointing mouse 3206, and the like. A semiconductor device to which the present invention is applied can be used for the display portion 3203.

  FIG. 25D illustrates a mobile computer, which includes a main body 3301, a display portion 3302, a switch 3303, operation keys 3304, an infrared port 3305, and the like. A semiconductor device to which the present invention is applied can be used for the display portion 3302.

  FIG. 25E shows a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 3401, a housing 3402, a display portion A 3403, a display portion B 3404, and a recording medium (DVD or the like). A reading unit 3405, operation keys 3406, a speaker unit 3407, and the like are included. Although the display portion A 3403 mainly displays image information and the display portion B 3404 mainly displays character information, a semiconductor device to which the present invention is applied can be used for the display portions A, B 3403, and 3404. Note that an image reproducing device provided with a recording medium includes a home game machine and the like.

  FIG. 25F illustrates a goggle type display (head mounted display), which includes a main body 3501, a display portion 3502, and an arm portion 3503. A semiconductor device to which the present invention is applied can be used for the display portion 3502.

  FIG. 25G illustrates a video camera, which includes a main body 3601, a display portion 3602, a housing 3603, an external connection port 3604, a remote control receiving portion 3605, an image receiving portion 3606, a battery 3607, an audio input portion 3608, operation keys 3609, and the like. . A semiconductor device to which the present invention is applied can be used for the display portion 3602.

  FIG. 25H illustrates a mobile phone, which includes a main body 3701, a housing 3702, a display portion 3703, an audio input portion 3704, an audio output portion 3705, operation keys 3706, an external connection port 3707, an antenna 3708, and the like. A semiconductor device to which the present invention is applied can be used for the display portion 3703. Note that the display portion 3703 can suppress current consumption of the mobile phone by displaying white characters on a black background.

  If the light emission luminance of the organic light emitting material is increased in the future, the light including the output image information can be enlarged and projected by a lens or the like and used in a front type or rear type projector.

  In addition, the electronic devices often display information distributed through electronic communication lines such as the Internet and CATV (cable television), and in particular, opportunities to display moving image information are increasing. Since the response speed of the organic light emitting material is very high, a light emitting device using the light emitting material is preferable for displaying moving images.

  In addition, since the light emitting device consumes power in the light emitting portion, it is desirable to display information so that the light emitting portion is minimized. Therefore, when a light emitting device is used for a display unit mainly including character information, such as a portable information terminal, particularly a mobile phone or a sound reproduction device, it is driven so that character information is formed by the light emitting part with the non-light emitting part as the background. It is desirable to do.

  As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields.

Schematic of transistor arrangement of the present invention Layout diagram of the circuit of the present invention Circuit diagram of the circuit of the present invention Top and sectional views of the circuit of the present invention Schematic of transistor arrangement of the present invention Layout diagram of the circuit of the present invention Schematic of transistor arrangement of the present invention Layout diagram of the circuit of the present invention Circuit diagram of the circuit of the present invention Top and sectional views of the circuit of the present invention Schematic of transistor arrangement of the present invention Schematic of transistor arrangement of the present invention Layout diagram of the circuit of the present invention Circuit diagram of the circuit of the present invention Top and sectional views of the circuit of the present invention Schematic of transistor arrangement of the present invention Layout diagram of the circuit of the present invention Circuit diagram of the circuit of the present invention Schematic of transistor arrangement of the present invention Layout diagram of the circuit of the present invention Circuit diagram of the circuit of the present invention Schematic of transistor arrangement of the present invention Sectional view of the semiconductor device of the present invention Sectional view of the semiconductor device of the present invention FIG. 7 is a diagram of an electronic device using the semiconductor device of the present invention. Conventional pixel circuit diagram Conventional pixel operation diagram Schematic diagram of conventional laser irradiation Conventional pixel layout Conventional laser light intensity distribution map The figure explaining the display screen of the conventional semiconductor device Schematic diagram of conventional transistor arrangement Conventional pixel layout Conventional pixel layout The top view and sectional drawing of the circuit of this invention.

Claims (6)

In a semiconductor device in which a plurality of pixels each including a transistor that drives a light-emitting element are provided in a matrix.
The transistors included in each of the plurality of pixels include a plurality of semiconductors,
Each of the plurality of semiconductors is a semiconductor crystallized by laser light irradiation,
The plurality of semiconductors are electrically connected,
Among the plurality of semiconductors, at least two semiconductors are disposed in different pixel regions,
The length of the channel formation region in the plurality of transistors in the scanning direction of the laser light and the channel length are each longer than the pixel pitch of the pixels. In a semiconductor device in which a plurality of pixels each including a transistor that drives a light-emitting element are provided in a matrix.
The transistors included in each of the plurality of pixels include a plurality of semiconductors,
Each of the plurality of semiconductors is a semiconductor crystallized by laser light irradiation, and is arranged to extend in a first direction that is a scanning direction of the laser light,
The plurality of semiconductors are electrically connected,
Among the plurality of semiconductors, at least two semiconductors are disposed in different pixel regions,
Each of the length in the first direction and the channel length of the channel formation region in the plurality of transistors is longer than the pixel pitch of the pixels,
Among the plurality of transistors, at least two transistors adjacent in a second direction perpendicular to the first direction have a positional relationship shifted from each other in the second direction. In a semiconductor device in which a plurality of pixels each including a transistor that drives a light-emitting element are provided in a matrix.
The transistors included in each of the plurality of pixels include a plurality of semiconductors,
Each of the plurality of semiconductors is a semiconductor crystallized by laser light irradiation,
The plurality of semiconductors are electrically connected,
Among the plurality of semiconductors, at least two semiconductors are disposed in different pixel regions,
The length in the scanning direction of the laser beam and the channel length of the channel formation regions in the plurality of transistors are each longer than the pixel pitch of the pixels,
When the scanning pitch of the laser beam is M and the pixel pitch of the pixel is N, the number of times that the laser beam is applied to the semiconductor included in each of the plurality of transistors is (N / M) or more. A semiconductor device characterized by the above. In a semiconductor device in which a plurality of pixels having a transistor for driving a light emitting element and a wiring are provided in a matrix,
The transistors included in each of the plurality of pixels include a plurality of semiconductors,
Each of the plurality of semiconductors is a semiconductor crystallized by laser light irradiation,
The plurality of semiconductors are electrically connected,
Among the plurality of semiconductors, at least two semiconductors are disposed in different pixel regions,
The plurality of semiconductors extend in a direction parallel to the plurality of wirings and in a scanning direction of the laser light,
The length in the scanning direction of the laser beam and the channel length of the channel formation regions in the plurality of transistors are each longer than the pixel pitch of the pixels,
When the scanning pitch of the laser beam is M and the pixel pitch of the pixel is N, the number of times the laser beam is applied to the plurality of semiconductors is (N / M) or more. Semiconductor device.   5. The length of a region in which a charge movement direction in a channel formation region of the plurality of transistors is parallel to a scanning direction of the laser light is longer than a pixel pitch of the pixels. A semiconductor device.   6. The semiconductor device according to claim 1, wherein channel formation regions of the plurality of transistors have regions bent in the pixels.

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