JP4328251B2 - Conductive pattern forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-resolution conductive pattern material which is excellent in production suitability and in durability and conduction stability and to provide a conductive pattern forming method with which the high-resolution conductive pattern which is excellent in durability and conduction stability is manufactured with a simple process excellent in production suitability. <P>SOLUTION: The conductive pattern material is formed by carrying out pattern exposure on a substrate to which a compound having a polymerization initiating site to initiate radical polymerization with photo-cleavage and a substrate bonding site is bonded, deactivating the polymerization initiating site on the exposure region, subsequently bringing an unsaturated compound capable of radical polymerization into contact with the substrate, exposing an entire surface of the substrate, generating the photo-cleavage on the polymerization initiating site remaining on the unexposed region in the pattern exposure and generating a graft polymer by initiating the radical polymerization and subsequently adhering a conductive material to the graft polymer. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

The present invention relates to a conductive pattern forming method, in particular, the wiring board consisting of a single circuit forming, or a method of forming a suitably conductive pattern to be used as a wiring board requiring conductive region having a large area.

Conventionally, various conductive patterns are used as a wiring board. As a typical method for forming these conductive patterns, a thin film conductive material formed by a known method such as vacuum vapor deposition is provided on an insulator, which is subjected to a resist treatment and previously formed by pattern exposure. One example is one in which a part of the resist is removed and then an etching process is performed to form a desired pattern (for example, see Patent Document 1). In this method, at least four steps are required, and when the wet etching process is performed, a treatment process for the waste liquid is also required, so that complicated processes have to be taken.
As another pattern forming method, a conductive pattern forming method using a photoresist is also known. This method is a method in which a substrate coated with a photoresist polymer or a photoresist on a dry film is exposed to UV through an arbitrary photomask to form a pattern such as a lattice. It is useful for forming an electromagnetic wave shield that requires high performance.
In recent years, with the progress of micromachine development and the further miniaturization of VLSI, these wiring structures have been required to be fine in nano units, and there is a limit to miniaturization in conventional metal etching. There is also concern about disconnection during processing of the thin wire portion. For this reason, a method for forming a dense pattern with controlled orientation has been desired.

On the other hand, in recent years, a method for forming a pattern directly from digitized data without using a mask or the like has attracted attention and various proposals have been made.
If such a digitized pattern forming method is used, it is expected that a fine pattern is arbitrarily formed. One of such methods is a method using a self-assembled monolayer. This utilizes a molecular assembly that is spontaneously formed when the substrate is immersed in an organic solvent containing surface active molecules. For example, a combination of an organic silane compound and a substrate of SiO ₂ or Al ₂ O ₃ In addition, a combination of alcohol or amine and a platinum substrate can be used, and pattern formation by an optical lithography method or the like is possible. Although such monomolecular films enable the formation of fine patterns, it is necessary to use a limited combination of substrates and materials, which makes it difficult to develop practical applications, and is suitable for practical use. The current pattern forming technology has not been established yet.

Furthermore, organic transistors using conductive polymer patterns have been studied from the viewpoints of light weight, flexibility, and environmental friendliness, but the characteristics of supports using such organic materials are light, thin, and flexible. Therefore, an element having a large area can be easily produced (using a technique similar to printing at room temperature). Combining these features with the electrical and optical properties of newly developed organic semiconductors, the most needed technology for information personalization in current information technology, for example, simple information It can be expected to create new developments in technologies for making wearable mobile devices with processing functions and human-friendly input / output functions.
However, none of them is sufficient from the practical viewpoints such as durability, enlargement of area, conductivity stability, and manufacturing suitability.

In response, proposals have been made to form a conductive pattern using a highly hydrophilic graft polymer. For example, a method of attaching a hydrophobic compound to a surface having a hydrophilic graft polymer on the entire surface to form a hydrophilic / hydrophobic pattern and attaching a conductive substance to the hydrophilic graft portion (for example, Patent Document 2) (See, for example, Patent Document 3), forming a hydrophilic graft polymer on the entire surface of the substrate, and depositing a conductive material in a pattern on the surface using a method such as ink jetting. There is a method in which a hydrophilic graft polymer is locally generated to form a hydrophilic graft pattern, and then a conductive polymer layer is formed on the hydrophilic pattern (see, for example, Patent Document 4). All of these have the advantage that patterns based on digital data can be easily formed, but there is still room for improvement in terms of pattern resolution. That is, in the former two techniques, there is a limit in resolution in the method of attaching the conductive substance in a pattern. In the third technique, a new hydrophobic polarity conversion type graft polymer is formed on the entire surface of the substrate, and then image exposure is performed with an infrared laser to locally convert the polarity to obtain a hydrophilic graft pattern. However, it is difficult to form a high resolution pattern of 10 μm or less due to the restriction of the beam diameter of the infrared laser. According to another aspect of the third technique, a hydrophilic graft polymer is locally generated using a surface graft reaction by coating a monomer solution on a substrate and then exposing the image. However, the coating layer of the monomer solution is thick and easily affected by the refractive index of the coating layer during exposure, and as a result, there is a problem that high resolution is difficult.
JP 2004-31588 A JP 2003-345038 A JP 2003-234561 A JP 2003-188498 A

An object of the present invention is to solve the conventional problems of the present invention and achieve the following objects.
It is an object of the present invention is to provide a high resolution conductive pattern having excellent and durability and conductive stability, the conductive pattern forming method capable of producing a simple process with excellent production suitability .

Means for solving the above-mentioned problems are as follows.
That is, the conductive pattern forming method of the present invention comprises a step of bonding a compound having a polymerization initiation site capable of initiating radical polymerization by photocleavage and a substrate binding site to a substrate,
Performing pattern exposure and deactivating the polymerization initiation site in the exposed area;
After contacting an unsaturated compound capable of radical polymerization on the substrate, the entire surface is exposed to cause photo-cleavage at the polymerization initiation site remaining in the non-exposed region at the time of pattern exposure, thereby initiating radical polymerization. A step of generating a graft polymer,
Attaching a conductive material to the graft polymer;
Are performed in this order.

In the conductive pattern forming method of the present invention, the polymerization initiation site is composed of a C—C bond, a C—N bond, a C—O bond, a C—Cl bond, a N—O bond, and a S—N bond. It is preferable to include any selected from the group.

  Furthermore, the graft polymer according to the present invention preferably has a polar group in the polymer. In particular, it is preferable to have a polar group in the side chain of the polymer. The polar group is particularly preferably an ionic group capable of dissociating into ions. Moreover, it is preferable that the graft polymer production | generation area | region in this aspect is a hydrophilic area | region.

In this invention, the polymerization start site | part of an exposure area | region can be deactivated by performing pattern exposure with respect to the compound which has the superposition | polymerization start site | part couple | bonded with the base-material surface, and a base-material joint site. In addition, the polymerization initiation site remaining in the non-exposed region at the time of pattern exposure causes photocleavage to occur by subsequent overall exposure, and radical polymerization is initiated, whereby a graft polymer is generated. From these things, in this invention, since pattern exposure can be performed beforehand and the exposure area | region can be made into the non-formation area | region of a graft polymer, the high-resolution graft polymer production | generation area | region according to the exposure pattern is formed. be able to.
Furthermore, the graft polymer produced by the method of the present invention can be chemically bonded to a compound having a polymerization initiation site and a substrate binding site bonded to the substrate surface at one end of the polymer. It is very strongly fixed to the material. In addition, only one end of the polymer is fixed to the base material, and the other end is free. Therefore, the polymer is less constrained and has extremely high mobility. From these facts, the graft polymer produced in the present invention has the high mobility as described above, is produced at a high resolution on the base material, and is firmly bonded to the base material. In addition to basic properties such as that, by introducing a highly hydrophilic functional group that is a polar group in the molecule, the graft polymer generation region has a high-mobility hydrophilic graft polymer. It becomes a hydrophilic region.
Here, by selectively attaching a conductive material having a property of adsorbing to the hydrophilic region (graft polymer generation region), the conductive material is adsorbed to the hydrophilic region to become a conductive region, and the graft polymer non- A conductive material is not adsorbed in the generation region and becomes a non-conductive region, and a conductive pattern (circuit) is formed. The conductive material ionically strongly adsorbed with the hydrophilic functional group of the hydrophilic graft polymer can form a monomolecular film or a polymer layer. It is considered that the conductivity is excellent.

According to the present invention is to provide a high resolution conductive pattern having excellent and durability and conductive stability, the conductive pattern forming method capable of producing a simple process with excellent production suitability.

Hereinafter, the present invention will be described in detail.
The conductive pattern forming method of the present invention is a step of bonding a compound having a polymerization initiation site capable of initiating radical polymerization by photocleavage and a base material binding site to a base material (hereinafter referred to as “photocleavable compound binding step” as appropriate). ), Pattern exposure, and a step of deactivating the polymerization initiation site in the exposed region (hereinafter, appropriately referred to as a “polymerization initiation ability deactivation step”), and radical polymerization on the substrate. A step of generating a graft polymer by bringing the whole surface to exposure after contact with a unsaturated compound, causing photo-cleavage at the polymerization initiation site remaining in the non-exposed region at the time of pattern exposure, and initiating radical polymerization (Hereinafter referred to as “graft polymer generation step” as appropriate) and a step of attaching a conductive material to the graft polymer (hereinafter referred to as “conductive material attachment step” as appropriate). When the is characterized in that it is carried out in this order.

First, in this invention, the outline from a photocleavable compound coupling | bonding process to a graft polymer production | generation process is demonstrated using FIG. Here, FIG. 1 is a conceptual diagram showing an outline from the photocleavable compound binding step to the graft polymer generation step in the present invention.
As shown in FIG. 1A, a functional group (represented by Z in the figure) is present on the substrate surface from the beginning. Here, a compound (QY) having a substrate binding site (Q) and a polymerization initiation site (Y) capable of initiating radical polymerization by photocleavage is imparted and brought into contact with the substrate surface. As a result, as shown in FIG. 1B, the functional group (Z) present on the substrate surface and the substrate binding site (Q) are bonded to each other, and the compound (QY) is bonded to the substrate surface. ) Is introduced [photocleavable compound binding step]. Thereafter, pattern exposure is performed on the surface into which the compound (QY) is introduced as indicated by the arrow in FIG. Thereby, the polymerization initiation site (Y) is photo-cleavage by the exposure energy. As a result, as shown in FIG. 1 (c), in the exposed portion of the compound (QY), the polymerization initiation site (Y) is deactivated to become a polymerization initiation ability deactivated site (S) [polymerization. Initiation ability deactivation process].
Thereafter, as shown in FIG. 1 (d), the entire surface is exposed as shown by the arrow in FIG. 1 (d) in a state where a known graft polymer raw material such as a monomer is brought into contact. Thus, as shown in FIG. 1 (e), in the region where the polymerization initiation site (Y) are still present, the graft polymer is produced polymerization initiation site of the compound (Q-Y) and (Y) starting from [ Graft polymer production step].

Hereinafter, each of these steps will be specifically described.
The group represented by Z in FIG. 1 is a functional group present on the surface of the substrate, and specific examples include a hydroxyl group, a carboxyl group, and an amino group. These functional groups may be originally present on the surface of the base material due to the material of the base material in the silicon substrate or glass substrate, and may be present on the surface by subjecting the base material surface to a surface treatment such as corona treatment. It may be.

Next, the structure of a compound having a polymerization initiation site capable of initiating radical polymerization by photocleavage (hereinafter simply referred to as polymerization initiation site) and a substrate binding site will be specifically described. If this compound is described in detail using a model of a compound (QY) having a base material binding site (Q) and a polymerization initiation site (Y) in the conceptual diagram of FIG. The initiation site (Y) is a structure containing a single bond that can be cleaved by light.
As the single bond that is cleaved by this light, carbonyl α-cleavage, β-cleavage reaction, light-free rearrangement reaction, phenacyl ester cleavage reaction, sulfonimide cleavage reaction, sulfonyl ester cleavage reaction, N-hydroxysulfonyl ester cleavage reaction, benzyl Examples thereof include a single bond that can be cleaved using an imide cleavage reaction, a cleavage reaction of an active halogen compound, and the like. These reactions break a single bond that can be cleaved by light. Examples of the single bond that can be cleaved include a C—C bond, a C—N bond, a C—O bond, a C—Cl bond, a N—O bond, and a S—N bond.

  In addition, since the polymerization initiation site (Y) containing a single bond that can be cleaved by light is the starting point of graft polymerization in the graft polymer production step, when the single bond that can be cleaved by light is cleaved, the cleavage reaction causes Has the function of generating radicals. Thus, the structure of the polymerization initiation site (Y) having a single bond that can be cleaved by light and capable of generating radicals includes an aromatic ketone group, a phenacyl ester group, a sulfonimide group, and a sulfonyl ester group. , N-hydroxysulfonyl ester group, benzylimide group, trichloromethyl group, benzyl chloride group and the like.

Since such a polymerization initiation site (Y) is cleaved by exposure to generate a radical, if there is a polymerizable compound in the vicinity of the radical, this radical functions as a starting point for the graft polymerization reaction. The graft polymer can be produced (graft polymer production region).
On the other hand, even if the polymerization initiation site (Y) is cleaved by exposure and a radical is generated, if there is no polymerizable compound in the vicinity of the radical, the radical is deactivated without being used. The polymerization initiating ability itself is deactivated. As a result, such a region becomes a non-grafted polymer region.

  On the other hand, the base material binding site (Q) is composed of a reactive group capable of reacting with and binding to the functional group (Z) present on the base material surface. And groups as shown below.

  The polymerization initiation site (Y) and the substrate binding site (Q) may be directly bonded or may be bonded via a linking group. Examples of the linking group include a linking group containing an atom selected from the group consisting of carbon, nitrogen, oxygen, and sulfur. Specifically, for example, a saturated carbon group, an aromatic group, an ester group, an amide group. Ureido group, ether group, amino group, sulfonamide group and the like. This linking group may further have a substituent, and examples of the substituent that can be introduced include an alkyl group, an alkoxy group, and a halogen atom.

  Specific examples [Exemplary Compound 1 to Exemplified Compound 16] of Compound (QY) having a substrate binding site (Q) and a polymerization initiation site (Y) are shown below together with the cleavage portion. However, it is not limited to these.

The photocleavable compound bonding step in the present invention is a step of bonding such a compound (QY) to a substrate.
As a method for bonding the compound (QY) as exemplified to the functional group Z present on the substrate surface, the compound (QY) is dissolved or dispersed in a suitable solvent such as toluene, hexane, acetone or the like. A method of applying the solution or dispersion to the surface of the substrate or a method of immersing the substrate in the solution or dispersion may be applied. At this time, the concentration of the compound (QY) in the solution or in the dispersion is preferably 0.01% by mass to 30% by mass, and particularly preferably 0.1% by mass to 15% by mass. As a liquid temperature in the case of making it contact, 0 to 100 degreeC is preferable. The contact time is preferably 1 second to 50 hours, and more preferably 10 seconds to 10 hours.

There is no restriction | limiting in particular in the base material used in this invention, The base material which has functional groups (Z), such as a hydroxyl group, a carboxyl group, and an amino group, or a corona treatment, a glow process, a plasma treatment, etc. By this surface treatment, a substrate in which a hydroxyl group, a carboxyl group or the like is generated can be applied.
In general, a flat substrate is used, but the substrate is not necessarily limited to a flat substrate, and the graft polymer may be similarly introduced to the surface of a substrate having an arbitrary shape such as a cylindrical shape. it can.

As a base material suitable for the present invention, for example, various base materials having surface hydroxyl groups such as glass, quartz, ITO, silicon, etc., surface treatment such as corona treatment, glow treatment, plasma treatment, etc. Examples thereof include plastic base materials such as generated PET, polypropylene, polyimide, epoxy, acrylic, and urethane.
The thickness of the substrate is selected according to the purpose of use and is not particularly limited, but is generally about 10 μm to 10 cm.

  Then, in the polymerization initiating ability deactivation step, pattern exposure is performed along the region where the graft polymer is not desired to be generated, and the compound (QY) bonded to the substrate surface is photocleavaged to lose the polymerization initiating ability. Make it live.

In this way, after the polymerization startable region and the polymerization initiating ability deactivation region are formed, a graft polymer generation step is performed.
In this graft polymer formation step, a radically polymerizable unsaturated compound (for example, a hydrophilic monomer) is used as a material for the desired graft polymer, using a substrate having a polymerization startable region and a polymerization initiating ability deactivated region. Then, the entire surface is exposed to activate the polymerization initiating group in the polymerization startable region to generate a radical, and the graft reaction between the radical and the unsaturated compound capable of radical polymerization is started. Occur and progress. As a result, a graft polymer is formed only in the region where polymerization can be initiated.

  In addition, as a method of bringing the unsaturated compound capable of radical polymerization into contact with the substrate surface, a method of applying a solution or a dispersed dispersion in which the unsaturated compound capable of radical polymerization is dissolved, the substrate in the solution or the dispersion liquid There is a method of soaking.

As the unsaturated compound capable of radical polymerization used in the graft polymer production step, any compound having a radical polymerizable group can be used. For example, hydrophilic monomers, hydrophobic monomers, macromers, oligomers can be used. And polymers having a polymerizable unsaturated group. In the present invention, a hydrophilic polymer, a hydrophilic macromer, a hydrophilic monomer, or the like having a hydrophilic group that is a polar group is particularly preferable from the viewpoint of adhesion of the conductive material.
Specific examples of the unsaturated compound capable of radical polymerization that are preferably used in the graft polymer production step are shown below.

-Hydrophilic polymer having a polymerizable unsaturated group-
The hydrophilic polymer having a polymerizable unsaturated group is a radically polymerizable group-containing hydrophilic polymer in which an ethylene addition polymerizable unsaturated group such as a vinyl group, an allyl group or a (meth) acryl group is introduced in the molecule. Point to. This radical polymerizable group-containing hydrophilic polymer needs to have a polymerizable group at the main chain end and / or side chain, and preferably has a polymerizable group at both of them. Hereinafter, a hydrophilic polymer having a polymerizable group (at the main chain end and / or side chain) is referred to as a radical polymerizable group-containing hydrophilic polymer.

Such a radically polymerizable group-containing hydrophilic polymer can be synthesized as follows.
As a synthesis method, (a) a method of copolymerizing a hydrophilic monomer and a monomer having an ethylene addition polymerizable unsaturated group, (b) copolymerizing a hydrophilic monomer and a monomer having a double bond precursor, Next, a method of introducing a double bond by treatment with a base or the like, and (c) a method of reacting a functional group of a hydrophilic polymer with a monomer having an ethylene addition polymerizable unsaturated group. Among these, from the viewpoint of synthesis suitability, (c) a method of reacting a functional group of a hydrophilic polymer with a monomer having an ethylene addition polymerizable unsaturated group is particularly preferable.

In the methods (a) and (b), the hydrophilic monomer used for the synthesis of the radical polymerizable group-containing hydrophilic polymer includes (meth) acrylic acid or its alkali metal salt and amine salt, itaconic acid or its alkali. Metal salt and amine salt, 2-hydroxyethyl (meth) acrylate, (meth) acrylamide, N-monomethylol (meth) acrylamide, N-dimethylol (meth) acrylamide, allylamine or its hydrohalide, 3-vinylpropion Acid or alkali metal salt and amine salt thereof, vinyl sulfonic acid or alkali metal salt and amine salt thereof, 2-sulfoethyl (meth) acrylate, polyoxyethylene glycol mono (meth) acrylate, 2-acrylamido-2-methylpropanesulfone Monomers having hydrophilic groups such as carboxyl groups, sulfonic acid groups, phosphoric acid groups, amino groups or salts thereof, hydroxyl groups, amide groups and ether groups, such as acid phosphooxypolyoxyethylene glycol mono (meth) acrylate Can be mentioned.
As the hydrophilic polymer used in the method (c), a hydrophilic homopolymer or copolymer obtained using at least one selected from these hydrophilic monomers is used.

  When the radically polymerizable group-containing hydrophilic polymer is synthesized by the method (a), examples of the monomer having an ethylene addition polymerizable unsaturated group that is copolymerized with the hydrophilic monomer include an allyl group-containing monomer. Examples include allyl (meth) acrylate and 2-allyloxyethyl methacrylate.

  Further, when the radical polymerizable group-containing hydrophilic polymer is synthesized by the method (b), a monomer having a double bond precursor that is copolymerized with a hydrophilic monomer is 2- (3-chloro-1-oxopropoxy). ) Ethyl methacrylate.

  Further, when the radical polymerizable group-containing hydrophilic polymer is synthesized by the method (c), a reaction between a carboxyl group, an amino group or a salt thereof in the hydrophilic polymer and a functional group such as a hydroxyl group and an epoxy group is performed. It is preferable to introduce an unsaturated group using it. Examples of the monomer having an addition polymerizable unsaturated group used for this purpose include (meth) acrylic acid, glycidyl (meth) acrylate, allyl glycidyl ether, and 2-isocyanatoethyl (meth) acrylate.

-Hydrophilic macromonomer-
The method for producing a macromonomer that can be used in the present invention is described in, for example, Chapter 2 of “Macromonomer Chemistry and Industry” (Editor, Yuya Yamashita) published on September 20, 1999 by the IP Publishing Bureau. Various production methods have been proposed in “Synthesis”.
Particularly useful hydrophilic macromonomers that can be used in the present invention include macromonomers derived from carboxyl group-containing monomers such as acrylic acid and methacrylic acid, 2-acrylamido-2-methylpropanesulfonic acid, and vinylsterene sulfone. Sulfonic acid macromonomer derived from monomer of acid and its salt, (meth) acrylamide, N-vinylacetamide, N-vinylformamide, amide macromonomer derived from N-vinylcarboxylic amide monomer, hydroxyethyl Macromonomers derived from hydroxyl group-containing monomers such as methacrylic acid, hydroxyethyl acrylate, glycerol monomethacrylate, methoxyethyl acrylate, methoxypolyethylene glycol acrylate, polyethylene glycol Macromonomers derived from alkoxy group or ethylene oxide group-containing monomers such Lumpur acrylate. A monomer having a polyethylene glycol chain or a polypropylene glycol chain can also be usefully used as the macromonomer of the present invention.
Among these hydrophilic macromonomers, useful ones have a molecular weight in the range of 250 to 100,000, and a particularly preferable range is 400 to 30,000.

-Hydrophilic monomer-
The hydrophilic monomer may be a monomer having a positive charge such as ammonium or phosphonium, or an acid having a negative charge such as a sulfonic acid group, a carboxyl group, a phosphoric acid group, or a phosphonic acid group or capable of dissociating into a negative charge. Examples thereof include monomers having a group, but other hydrophilic monomers having a nonionic group such as a hydroxyl group, an amide group, a sulfonamide group, an alkoxy group, and a cyano group can also be used.

Specific examples of the hydrophilic monomer that can be used in the present invention include the following monomers.
For example, (meth) acrylic acid or its alkali metal salt and amine salt, itaconic acid or its alkali metal salt and amine salt, allylamine or its hydrohalide salt, 3-vinylpropionic acid or its alkali metal salt and amine salt, Vinyl sulfonic acid or its alkali metal salt and amine salt, styrene sulfonic acid or its alkali metal salt and amine salt, 2-sulfoethylene (meth) acrylate, 3-sulfopropylene (meth) acrylate or its alkali metal salt and amine salt, 2-acrylamido-2-methylpropanesulfonic acid or alkali metal salts and amine salts thereof, acid phosphooxypolyoxyethylene glycol mono (meth) acrylate or salts thereof, 2-dimethylaminoethyl (meta Acrylate or its hydrohalide, 3-trimethylammoniumpropyl (meth) acrylate, 3-trimethylammoniumpropyl (meth) acrylamide, N, N, N-trimethyl-N- (2-hydroxy-3-methacryloyloxypropyl) Ammonium chloride and the like can be used. In addition, 2-hydroxyethyl (meth) acrylate, (meth) acrylamide, N-monomethylol (meth) acrylamide, N-dimethylol (meth) acrylamide, N-vinylpyrrolidone, N-vinylacetamide, polyoxyethylene glycol mono (meth) ) Acrylate is also useful.

-Solvent-
The solvent for dissolving and dispersing the above-mentioned radically polymerizable unsaturated compound is not particularly limited as long as the compound and additives added as necessary can be dissolved.
For example, when a hydrophilic compound such as a hydrophilic monomer is applied, an aqueous solvent such as water or a water-soluble solvent is preferable, and a mixture thereof or a solvent in which a surfactant is further added is preferable. . The water-soluble solvent refers to a solvent miscible with water in an arbitrary ratio, and examples of such a water-soluble solvent include alcohol solvents such as methanol, ethanol, propanol, ethylene glycol, and glycerin, acids such as acetic acid, Examples thereof include ketone solvents such as acetone, amide solvents such as formamide, and the like.
When hydrophobic compounds such as hydrophobic monomers are applied, alcohol solvents such as methanol, ethanol, 1-methoxy-2-propanol, ketone solvents such as methyl ethyl ketone, and aromatics such as toluene. A group hydrocarbon solvent is preferred.

There is no particular limitation on the exposure method that can be used for the pattern exposure in the polymerization inactivation ability deactivation step of the pattern formation method of the present invention and the overall exposure in the graft polymer generation step, and the energy that causes cleavage at the polymerization start site (Y). As long as exposure is possible, exposure with ultraviolet rays or exposure with visible light may be used. Moreover, the pattern exposure in the polymerization initiating ability deactivation step and the entire surface exposure in the graft polymer generation step may be performed under the same exposure conditions or different exposure conditions.
Examples of the light source used for exposure include ultraviolet light, deep ultraviolet light, visible light, and laser light. Specifically, excimer lasers such as ultraviolet light, i-line, g-line, KrF, and ArF are used. Among these, i-line, g-line, and excimer laser are preferable.

The resolution of the pattern formed by the present invention depends on the exposure conditions.
By using the pattern forming method of the present invention, a high-resolution pattern can be formed, and a high-definition pattern corresponding to the exposure can be formed by performing high-definition pattern exposure. Examples of the exposure method for forming a high-definition pattern include light beam scanning exposure using an optical system, exposure using a mask, and the like, and an exposure method corresponding to the resolution of a desired pattern may be taken.
Specific examples of the high-definition pattern exposure include stepper exposure such as i-line stepper, g-line stepper, KrF stepper, and ArF stepper.

  Thus, by the pattern formation method of the present invention, the substrate on which the pattern composed of the graft polymer generation region and the non-generation region is formed on the surface is subjected to a treatment such as solvent immersion or solvent washing after exposure, The remaining homopolymer is removed and purified. Specifically, washing with water or acetone, drying and the like can be mentioned. From the viewpoint of homopolymer removability, it is preferable to adopt means such as ultrasonic waves. The purified base material has the homopolymer remaining on the surface completely removed, and only the patterned graft polymer firmly bonded to the base material is present.

  From these things, the pattern which consists of the graft polymer production | generation area | region and non-production | generation area | region obtained at the above-mentioned process turns into a fine pattern according to the resolution of exposure.

Next, the conductive material used in the conductive pattern forming method of the present invention and the adhesion method will be described.
In the present invention, a conductive pattern is obtained by attaching a conductive material to the graft polymer generation region obtained above, and as a result, a circuit is formed.
In addition, as a method of attaching such a conductive material,
(A) a method of attaching conductive fine particles to the graft polymer formation region;
(B) a method of forming a conductive polymer layer in the graft polymer formation region;
And can be appropriately selected according to the application. Hereinafter, a method for adsorbing these conductive materials will be described in detail.

(A) Adhesion of conductive fine particles In the present invention, the conductive material adsorption method (A) ionically adsorbs the conductive fine particles described below to the polar group of the graft polymer according to the polarity. It is a method to make it. The conductive fine particles adsorbed here are firmly fixed in a state close to a monomolecular film, so that even a small amount has sufficient conductivity and has an advantage that it can be applied to a fine circuit.
The conductive fine particles applicable to this method are not particularly limited as long as they have conductivity, and fine particles made of a known conductive material can be arbitrarily selected and used. For example, fine metal particles such as Au, Ag, Pt, Cu, Rh, Pd, Al, Cr, In ₂ O ₃ , SnO ₂ , ZnO, Cdo, TiO ₂ , CdIn ₂ O ₄ , Cd ₂ SnO ₂ , Zn ₂ SnO ₄ , oxide semiconductor fine particles such as In ₂ O ₃ —ZnO, fine particles using a material doped with impurities compatible with these, spinel compound fine particles such as MgInO and CaGaO, and conductivity such as TiN, ZrN, and HfN Suitable examples include nitride fine particles, conductive boride fine particles such as LaB, and conductive polymer fine particles as the organic material.

-Relationship between polarity of polar group (hydrophilic group) of graft polymer and conductive fine particles-
When the graft polymer obtained in the present invention has an anionic polar group (hydrophilic group) such as a carboxyl group, a sulfonic acid group, or a phosphonic acid group, the graft polymer formation region has a negative charge selectively. A conductive region (wiring) is formed by adsorbing (cationic) conductive fine particles having a positive charge here.

  Examples of such cationic conductive fine particles include positively charged metal (oxide) fine particles. The fine particles having a high density and positive charge on the surface can be obtained by, for example, the method of Toru Yonezawa et al. Yonezawa, Chemistry Letters. 1999 page 1061, T.M. Yonezawa, Langumuir 2000, vol 16, 5218 and Toru Yonezawa, Polymer preprints, Japan vol. 49.2911 (2000). Yonezawa et al. Show that metal particle surfaces that are chemically modified with a functional group having a positive charge at high density can be formed using metal-sulfur bonds.

  On the other hand, when the obtained graft polymer has a polar group (hydrophilic group) of a cationic group such as an ammonium group described in JP-A-10-296895, the graft polymer formation region selectively has a positive charge. A conductive region (wiring) is formed by adsorbing conductive fine particles having a negative charge thereto. Examples of the negatively charged metal particles include gold or silver particles obtained by citrate reduction.

  The particle diameter of the conductive fine particles used in the present invention is preferably in the range of 0.1 nm to 1000 nm, and more preferably in the range of 1 nm to 100 nm. When the particle diameter is smaller than 0.1 nm, the conductivity caused by the continuous contact between the surfaces of the fine particles tends to decrease. Moreover, when larger than 1000 nm, the adhesiveness of the hydrophilic group and particle | grains of a graft polymer will fall, and there exists a tendency for the intensity | strength of an electroconductive area | region to deteriorate.

  It is preferable from the viewpoint of durability that these conductive fine particles are bonded in the maximum amount that can be adsorbed to the hydrophilic group of the graft polymer. Further, from the viewpoint of ensuring conductivity, the dispersion concentration of the dispersion is preferably about 0.001 to 20% by weight.

  As a method of adsorbing the conductive fine particles to the hydrophilic group of the graft polymer, a solution in which conductive fine particles having a charge are dissolved or dispersed on the surface is applied to the surface of the substrate on which the graft polymer generation region is formed in an image-like manner. Examples thereof include a method of coating, and a method of immersing a substrate on which a graft polymer formation region is formed in an image-like manner in these solutions or dispersions. In either case of coating or dipping, an excessive amount of conductive fine particles are supplied and introduced by sufficient ionic bonds with the polar group (hydrophilic group). The contact time with the generation surface is preferably about 10 seconds to 24 hours, and more preferably about 1 minute to 180 minutes.

  Not only one type of conductive fine particles but also a plurality of types can be used in combination as required. In order to obtain desired conductivity, a plurality of materials can be mixed and used in advance.

(B) Formation of Conductive Polymer Layer The conductive material adsorption method (B) in the present invention ionically converts a conductive monomer, which is a precursor of a conductive polymer described below, into a polar group of the graft polymer. It is a method of forming a polymer layer (conductive polymer layer) by adsorbing and causing a polymerization reaction as it is. The conductive polymer layer obtained in this way is strong and excellent in durability, and a very thin film can be formed by adjusting conditions such as the monomer supply rate. In addition, there is an advantage that the film thickness is uniform.
As a conductive polymer applicable to this method, any polymer compound having conductivity of 10 ⁻⁶ s · cm ⁻¹ or more, preferably 10 ⁻¹ s · cm ⁻¹ or more is usable. Specifically, for example, substituted and unsubstituted conductive polyaniline, polyparaphenylene, polyparaphenylene vinylene, polythiophene, polyfuran, polypyrrole, polyselenophene, polyisothianaphthene, polyphenylene sulfide, Examples include polyacetylene, polypyridyl vinylene, and polyazine. These may use only 1 type and may use it in combination of 2 or more type according to the objective. Moreover, as long as desired conductivity can be achieved, it can be used as a mixture with other polymers having no conductivity, or a copolymer of these monomers and other monomers without conductivity can be used. be able to.

Although there is no restriction | limiting in particular in the method of forming a conductive polymer layer using such a conductive polymer, From the viewpoint that a uniform thin film can be formed, the monomer which has the following conductivity is used. The method is preferred.
First, the base material on which the graft polymer formation region is formed is immersed in a solution containing a polymerization catalyst such as potassium persulfate or iron (III) sulfate or a compound having a polymerization initiating ability, and this solution is agitated while stirring. A monomer capable of forming a conductive polymer, such as 3,4-ethylenedioxythiophene, is gradually added dropwise. In this way, the polar group (hydrophilic group) in the polymerization polymer or the graft polymer imparted with the polymerization initiating ability and the monomer capable of forming the conductive polymer are strongly adsorbed by the interaction, The polymerization reaction proceeds, and an extremely thin film of the conductive polymer is formed in the graft polymer formation region on the substrate, which becomes a conductive polymer layer.

In the present invention, the conductive monomer itself is strongly adsorbed by forming an interaction electrostatically or polarly with the functional group present in the graft polymer formation region, so that they are formed by polymerization. Since the conductive polymer layer forms a strong interaction with the graft polymer generation region, even if it is a thin film, it has sufficient strength against rubbing and scratching.
Furthermore, by selecting a material in which the conductive polymer and the polar group (hydrophilic group) of the graft polymer are adsorbed in the relationship between a cation and an anion, the polar group (hydrophilic group) of the conductive polymer is selected. Since it adsorbs as a counter anion and functions as a kind of dopant, it is possible to obtain the effect that the conductivity of the conductive pattern can be further improved. Specifically, for example, when styrene sulfonic acid is selected as the hydrophilic group and thiophene is selected as the material of the conductive polymer, the interaction between the two causes a counter anion at the interface between the graft polymer generation region and the conductive polymer layer. There is a polythiophene having a sulfonic acid group (sulfo group), which functions as a conductive polymer dopant.

  Although there is no restriction | limiting in particular in the film thickness of the conductive polymer layer formed in the graft polymer production | generation area | region surface, It is preferable that it is the range of 0.01 micrometer-10 micrometers, and it is more preferable that it is the range of 0.1 micrometer-5 micrometers. . If the film thickness of the conductive polymer layer is within this range, sufficient conductivity and transparency can be achieved. If the thickness is 0.01 μm or less, there is a concern that the conductivity may be insufficient.

More electrically conductive pattern forming method with the resulting conductive pattern materials are excellent in strength and durability, high definition (high resolution) wiring board comprising a single circuit forming or conducting a large area Wide application is expected as a wiring board requiring a region.
Furthermore, when a transparent film such as PET is used as the substrate, it can be used as a patterned transparent conductive film. Applications of such transparent conductive films include transparent electrodes for displays, light control devices, solar cells, touch panels, and other transparent conductive films, but are particularly useful as electromagnetic wave shielding filters for CRTs and plasma displays. . Since such an electromagnetic wave shielding filter requires high conductivity and transparency, it is preferable to provide a conductive material in a lattice shape. Such a lattice line width is preferably about 20 to 100 μm, and the opening is preferably about 50 to 600 μm. This lattice does not necessarily have to be regular and configured with straight lines, and may be configured with curved lines.
In the present invention, a finer pattern having a line width of 10 μm or less can be easily formed by selecting an exposure condition at the time of pattern exposure. Adsorption of metal wiring or metal fine particles having such an arbitrary pattern shape Since the region can be easily formed, various settings according to the purpose are possible.

EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited thereto.
(Synthesis Example 1: Synthesis of Compound A)
The exemplary compound 1 is synthesized by the following two steps. A description will be given of the scheme of each step.

1. Step 1 (Synthesis of Compound a)
24.5 g (0.12 mol) of 1-hydroxycyclohexyl phenyl ketone was dissolved in a mixed solvent of DMAc 50 g and THF 50 g, and 7.2 g (0.18 mol) of NaH (60% in oil) was gradually added in an ice bath. Thereto, 44.2 g (0.18 mol) of 11-bromo-1-undecene (95%) was added dropwise and reacted at room temperature. The reaction was completed in 1 hour. The reaction solution was poured into ice water and extracted with ethyl acetate to obtain a mixture containing Compound a in the form of a yellow solution. 37 g of this mixture was dissolved in 370 ml of acetonitrile, and 7.4 g of water was added. 1.85 g of p-toluenesulfonic acid monohydrate was added and stirred at room temperature for 20 minutes. The organic phase was extracted with ethyl acetate and the solvent was distilled off. Compound a was isolated by column chromatography (filler: Wakogel C-200, developing solvent: ethyl acetate / hexane = 1/80).
A synthesis scheme is shown below.

¹ H NMR (300 MHz CDCl ₃ )
δ = 1.2-1.8 (mb, 24H), 2.0 (q, 2H), 3.2 (t, J = 6.6, 2H), 4.9-5.0 (m, 2H) ) 5.8 (ddt, J = 24.4, J = 10.5, J = 6.6, 1H _. ), 7.4 (t, J = 7.4, 2H), 7.5 (t, J = 7.4, 1H), 8.3 (d, 1H)

2. Step 2 (Synthesis of Compound A by Hydrosilylation of Compound a)
Two drops of Spear catalyst (H ₂ PtCl ₆ .6H ₂ O / 2-PrOH, 0.1 mol / l) was added to 5.0 g (0.014 mol) of compound a, and 2.8 g (0.021 mol) of trichlorosilane in an ice bath. ) Was added dropwise and stirred. After 1 hour, 1.6 g (0.012 mol) of trichlorosilane was added dropwise, and the temperature was returned to room temperature. The reaction was complete after 3 hours. After completion of the reaction, unreacted trichlorosilane was distilled off under reduced pressure to obtain Compound A.
A synthesis scheme is shown below.

¹ H NMR (300 MHz CDCl ₃ )
δ = 1.2−1.8 (m, 30H), 3.2 (t, J = 6.3, 2H), 7.3-7.7 (m, 3H), 8.3 (d, 2H) )

(Synthesis Example 2: Synthesis of hydrophilic polymer P having a polymerizable group)
18 g of polyacrylic acid (average molecular weight 25,000) is dissolved in 300 g of DMAc (dimethylacetamide), and 0.41 g of hydroquinone, 19.4 g of 2-methacryloyloxyethyl isocyanate and 0.25 g of dibutyltin dilaurate are added thereto. , Reacted at 65 ° C. for 4 hours. The acid value of the obtained polymer was 7.02 meq / g. The carboxyl group was neutralized with a 1 mol / l sodium hydroxide aqueous solution, the polymer was precipitated in addition to ethyl acetate, and washed well to obtain a hydrophilic polymer P having a polymerizable group.

[Example 1]
(Photocleavable compound binding step)
A glass substrate (manufactured by Nippon Sheet Glass Co., Ltd.) was immersed in a piranha solution (sulfuric acid / 30% hydrogen peroxide = 1/1 vol mixed solution) overnight, and then washed with pure water. The substrate was placed in a separable flask purged with nitrogen and immersed in a dehydrated toluene solution of 12.5% by mass of Compound A for 1 hour. After taking out, it wash | cleaned in order with toluene, acetone, and a pure water. The substrate to which compound A thus obtained is bonded is referred to as substrate A1.

(Polymerization initiation ability deactivation process)
A pattern mask (NC-1, manufactured by Toppan Printing Co., Ltd.) was clipped to one side of the substrate A1, and pattern exposure was performed for 1 minute with an exposure machine (UVX-02516S1LP01, manufactured by USHIO INC.). The substrate thus treated is referred to as a substrate B1.

(Graft polymer production process)
Hydrophilic polymer P (0.5 g) was dissolved in a mixed solvent of 4.0 g of pure water and 2.0 g of acetonitrile to prepare a coating solution for producing a graft polymer. The coating solution for the graft generation layer was applied to the pattern exposure surface of the substrate B1 with a spin coater. The spin coater was first rotated at 300 rpm for 5 seconds and then at 1000 rpm for 20 seconds. The coated substrate B1 was dried at 100 ° C. for 2 minutes. The thickness of the graft polymer production layer after drying was 2 μm.
The entire surface of the substrate having the graft polymer generation layer was exposed with an exposure machine (UVX-02516S1LP01, manufactured by USHIO INC.) For 5 minutes. Thereafter, the exposed surface was sufficiently washed with pure water.
As described above, a pattern C1 was formed.

(Conductive material adhesion process)
The substrate having the pattern C1 is immersed in a positively charged Ag particle dispersion obtained as follows, and then the surface is sufficiently washed with running water to remove excess fine particle dispersion, thereby generating a graft polymer. A conductive pattern material D1 in which Ag particles were adsorbed only in the region was obtained.

<Preparation of Ag particle dispersion>
Add 3 g of bis (1,1-trimethylammonium decanoylaminoethyl) disulfide to 50 ml of ethanol solution (5 mmol / l) of silver perchlorate, and add 30 ml of sodium borohydride solution (0.4 mol / l) with vigorous stirring. The ions were slowly dropped to reduce the ions, and a dispersion of silver particles coated with quaternary ammonium was obtained. When the size of the silver particles was measured with an electron microscope, the average particle size was 5 nm.

<Confirmation of conductive pattern>
When the surface of the obtained conductive pattern material D1 was observed with a transmission electron microscope (JEOL JEM-200CX) at a magnification of 100,000 times, a dense uneven shape caused by Ag fine particles attached only to the graft polymer generation region was found. It was confirmed that it was formed. Further, it was confirmed that fine wiring having a line width of 8 μm / a void width of 8 μm was formed in the conductive pattern material D1.

<Evaluation of conductive stability>
When the surface conductivity of the pattern part of the obtained Ag fine particles was measured by a four-probe method using LORESTA-FP (manufactured by Mitsubishi Chemical Corporation), it showed 10 Ω / □. The transmittance of the entire surface of the patterned film was measured to be 58%. From this, it was found that a conductive pattern having high transparency and excellent conductivity was formed.

[Example 2]
(Photocleavable compound binding step)
A single-side corona-treated PET (biaxially stretched polyethylene terephthalate film) having a thickness of 188 μm is cut into a size of 5 cm × 5 cm, and the substrate is placed in a separable flask purged with nitrogen, and 12.5% by mass of Compound A It was immersed in a dehydrated toluene solution for 1 hour. After taking out, it wash | cleaned in order with toluene, acetone, and a pure water. The substrate to which compound A thus obtained is bonded is referred to as substrate A2.

(Polymerization initiation ability deactivation process)
Pattern exposure was performed on the surface of Compound A2 on which Compound A was bonded in the same manner as in Example 1. The substrate thus treated is referred to as substrate B2.

(Graft polymer production process)
Acrylic acid aqueous solution is placed between the PET substrate (substrate A2) and the quartz plate by suspending it in 1.0 ml of a 20% by mass aqueous solution of acrylic acid on the pattern exposure surface of the substrate B2, and placing quartz glass thereon. Was sandwiched.
Thereafter, the entire surface exposure was performed in the same manner as in Example 1. Thereafter, the exposed surface was sufficiently washed with pure water.
As described above, the pattern C2 was formed.

(Conductive material adhesion process)
The substrate having the pattern C2 was dipped in a positively charged Ag particle dispersion in the same manner as in Example 1, and then the surface was sufficiently washed with running water to remove excess fine particle dispersion, and the conductive pattern. Material D2 was obtained.

<Confirmation of conductive pattern>
When the surface of the conductive pattern material D2 on which the conductive fine particles are adsorbed is observed at a magnification of 100,000 times with a transmission electron microscope (JEOL JEM-200CX), the fine particles caused by the Ag fine particles attached only to the graft polymer formation region are observed. It was confirmed that an uneven shape was formed. Further, it was confirmed that fine wiring having a line width of 8 μm / a gap width of 8 μm was formed in the conductive pattern material D2.

<Evaluation of conductive stability>
When the surface conductivity of the pattern part of the obtained Ag fine particles was measured by a four-probe method using LORESTA-FP (manufactured by Mitsubishi Chemical Corporation), it showed 20Ω / □. The transmittance of the entire surface of the patterned film was measured to be 58%. From this, it was found that a conductive pattern having high transparency and excellent conductivity was formed.

Example 3
(Photocleavable compound binding step)
Using an ITO-deposited glass substrate (manufactured by Nippon Sheet Glass Co., Ltd., surface resistance 10Ω / □, product number. 49J183), ultrasonically wash in order of isopropyl alcohol, acetone, methanol, and pure water for 5 minutes or more respectively. Nitrogen was blown dry. The substrate was placed in a separable flask purged with nitrogen and immersed in a dehydrated toluene solution of 12.5% by mass of Compound A for 1 hour to overnight. After taking out, it wash | cleaned in order with toluene, acetone, and a pure water. The substrate to which compound A thus obtained is bonded is referred to as substrate A3.

(Polymerization initiation ability deactivation process)
Pattern exposure was performed on one side of the substrate A3 in the same manner as in Example 1. The substrate thus treated is referred to as a substrate B3.

(Graft polymer production process)
On the substrate B3, a graft polymer generation layer was formed using a coating solution for generating a graft polymer in the same manner as in Example 1, and then the entire surface was exposed to form a pattern C3.

(Conductive material adhesion process)
The substrate having the pattern C3 is immersed in a dispersion of positively charged Ag particles in the same manner as in Example 1, and then the surface is sufficiently washed with running water to remove excess fine particle dispersion, thereby forming a conductive pattern. D3 was obtained.

<Confirmation of conductive pattern>
When the surface of the conductive pattern material D3 on which the conductive fine particles are adsorbed is observed with a transmission electron microscope (JEOL JEM-200CX) at a magnification of 100,000 times, the fine pattern caused by the Ag fine particles attached only to the graft polymer formation region is observed. It was confirmed that an uneven shape was formed. Further, it was confirmed that fine wiring having a line width of 8 μm / a void width of 8 μm was formed in the conductive pattern material D3.

<Evaluation of conductive stability>
When the surface conductivity of the pattern part of the obtained Ag fine particles was measured by a four-probe method using LORESTA-FP (manufactured by Mitsubishi Chemical Corporation), it showed 15 Ω / □. The transmittance of the entire surface of the patterned film was measured to be 58%. From this, it was found that a conductive pattern having high transparency and excellent conductivity was formed.

[Examples 4 to 6]
Substrates having patterns C1 to C3 prepared in Examples 1 to 3 were respectively 1.23 g of sodium anthraquinone-2-sulfonate · monohydrate and 7.20 g of sodium 5-sulfosalicylic acid · hydrate. And, it was immersed in a solution consisting of 4.38 g of iron trichloride hexahydrate and 125 ml of water, and a solution of 0.75 ml of pyrrole and 125 ml of water was added with stirring. One hour later, the substrate was taken out, washed with water, and then washed with acetone to form a conductive pattern material D4 to Examples 4 to 6 in which a polypyrrole layer (conductive polymer layer) was formed on the surface of the substrate. D6 was obtained.
When the surfaces of the conductive pattern materials D4 to D6 were observed with a transmission electron microscope in the same manner as in Example 1, the conductive pattern materials D4 to D6 each had a fine wiring with a line width of 8 μm and a gap width of 8 μm. It was confirmed that it was formed.

<Evaluation>
The obtained conductive patterns D4 to D6 were evaluated for conductive stability in the same manner as in Example 1.
In the evaluation of the conductive stability, the surface conductivity of the conductive polymer layer portion in the conductive patterns D4 to D6 indicates 350Ω / □, 100Ω / □, and 150Ω / □ in order, and the conductive pattern having excellent conductivity is obtained. It was found that it was formed.

<Durability evaluation>
The surfaces of the conductive patterns D1, D2, and D4 of Examples 1, 2, and 4 were manually rubbed back and forth 20 times with a cloth (BEMCOT, manufactured by Asahi Kasei Kogyo Co., Ltd.) moistened with water. After rubbing, the surface was observed at a magnification of 100,000 times with a transmission electron microscope (JEOL JEM-200CX) in the same manner as described above. As before the rubbing treatment, Ag fine particles were formed only in the unexposed area. A dense uneven shape was observed.
Further, the surface conductivity was also measured by the same method as the above-described evaluation of the conductivity stability, but even after the rubbing treatment, the same value as before the treatment was shown and no change was observed.

As described above, according to the embodiment, the conductive pattern material obtained by the conductive pattern forming method of the present invention has a fine conductive pattern regardless of whether the conductive fine material or the conductive polymer is used as the conductive material. In addition, it was confirmed that stable conductivity was easily obtained and that the durability was further excellent.

  The conductive pattern material obtained by the present invention can form a fine pattern, and a fine metal particle dispersion layer having excellent conductivity and durability can be formed into a desired fine pattern. As described above, materials that require high conductivity and arbitrary high-definition (high-resolution) pattern formation, for example, application to circuit formation including circuit formation such as micromachines and VLSI, electromagnetic waves attached to CRTs and plasma displays It can be applied to a wide range of applications such as shield filters, transparent electrodes for displays, light control devices, solar cells, touch panels and other transparent conductive films.

It is a conceptual diagram which shows the outline of a graft polymer production | generation process from the photocleavable compound coupling | bonding process in this invention.

Claims (2)

Binding a compound having a polymerization initiation site capable of initiating radical polymerization by photocleavage and a substrate binding site to the substrate;
Performing pattern exposure and deactivating the polymerization initiation site in the exposed area;
After contacting an unsaturated compound capable of radical polymerization on the substrate, the whole surface is exposed, photocleavage occurs at the polymerization initiation site remaining in the non-exposed region at the time of pattern exposure, and radical polymerization is started. A step of generating a graft polymer,
Attaching a conductive material to the graft polymer;
Are performed in this order. The polymerization initiation site includes any one selected from the group consisting of C—C bond, C—N bond, C—O bond, C—Cl bond, N—O bond, and S—N bond. The conductive pattern forming method according to claim 1 .

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