JP4316974B2 - Magnetic field sensor using light emitting element whose emission intensity depends on magnetic field - Google Patents
Magnetic field sensor using light emitting element whose emission intensity depends on magnetic field Download PDFInfo
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- -1 aluminum quinolinol Chemical compound 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 13
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Natural products C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 229960000956 coumarin Drugs 0.000 claims description 6
- 235000001671 coumarin Nutrition 0.000 claims description 6
- 230000005525 hole transport Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 3
- 125000000332 coumarinyl group Chemical group O1C(=O)C(=CC2=CC=CC=C12)* 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 35
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000012044 organic layer Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229930192419 itoside Natural products 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Description
本発明は、ＥＬＤ（エレクトロルミネッセンスデバイス）の発光輝度の磁場依存性を用いて、直接磁場強度を光信号に変換する発光素子を用いた磁場センサーに関するものである。 The present invention relates to a magnetic field sensor using a light emitting element that directly converts a magnetic field intensity into an optical signal using the magnetic field dependence of the emission luminance of an ELD (electroluminescence device).
磁場センサーは、電磁誘導相互作用を利用したものと、磁電変換を利用したものに大別される。前者の例として、磁気ヘッド、差動トランス、タコジェネレータ、後者の例としてホール素子、ＭＲＥ素子(磁気抵抗効果素子)を挙げることができる。
一般的に電磁誘導型の磁気センサーは出力電圧が徴分的になり、磁力線の時間的変化量に出力が比例する。つまり、磁気エネルギーの時間的変化のない場合は、磁気を検出することができない。
Magnetic field sensors are roughly classified into those using electromagnetic induction interaction and those using magnetoelectric conversion. Examples of the former include a magnetic head, a differential transformer, a tachometer, and examples of the latter include a Hall element and an MRE element (magnetoresistance effect element).
Generally, the output voltage of an electromagnetic induction type magnetic sensor becomes fractional, and the output is proportional to the amount of change over time of the lines of magnetic force. That is, magnetism cannot be detected when there is no temporal change in magnetic energy.
これに対して、磁電変換型の磁気センサーは電流と磁気の相互間に生ずるローレンツ力(フレミングの左手三指の法則)を利用しており、静磁界での検出も可能である。いずれのセンサーも磁気エネルギーを電気エネルギーに変換するものである。
このため磁場信号を光信号に変換するには、磁場によって発生した電気信号を何らかな手法で光信号に変える必要があり、磁気センサー構造の複雑さやコストを上げる原因となっている。
On the other hand, the magnetoelectric conversion type magnetic sensor uses Lorentz force (Fleming's left-handed three-finger law) generated between current and magnetism, and can be detected by a static magnetic field. Both sensors convert magnetic energy into electrical energy.
For this reason, in order to convert a magnetic field signal into an optical signal, it is necessary to change an electric signal generated by the magnetic field into an optical signal by some technique, which increases the complexity and cost of the magnetic sensor structure.
従来まで類似の機能を持つ発明, つまり磁場を直接光信号に変換する手法として、アントラセンを用いた有機ＥＬ素子が知られている（例えば、非特許文献１参照）。
アントラセンを陰極と陽極で挟みホールと電子をアントラセン中に入れると、三重項励起子が発生する。電流密度が高まると三重項励起子の密度も高まり、励起子同士が再結合し一重項励起子が発生し、これが発光に寄与する。
磁場が存在するとこの三重項励起子から１重項励起子への転換速度が変化し、ＥＬ素子の発光強度が変化することが知られている。しかしながら、アントラセンを用いたＥＬは、燐光性の発光を伴いその寿命が数十msに及ぶことや、化学的安定性、低い発光効率が原因で、実用的なＥＬ素子としての応用にはいたっていない。
When an anthracene is sandwiched between a cathode and an anode and holes and electrons are put into the anthracene, triplet excitons are generated. As the current density increases, the density of triplet excitons also increases, and the excitons recombine to generate singlet excitons, which contribute to light emission.
It is known that when a magnetic field is present, the rate of conversion from triplet excitons to singlet excitons changes, and the emission intensity of the EL element changes. However, EL using anthracene has not been put to practical use as an EL element due to phosphorescent emission and its lifetime of several tens of ms, chemical stability, and low emission efficiency. .
空間の磁場強度は、一旦、ホール電圧などの電気信号として測定された後、その信号を増幅して光信号化しており、このため複数のデバイスの組みあわせが必要となり、高コスト化につながっている。
本発明は、この点を改良し、磁気エネルギーを直接光信号として計測可能とするものであり、ＥＬＤの発光輝度の磁場依存性を用いて、直接磁場強度を光信号に変換することで、単純な構造を持ち、安定性及び発光効率に優れ、安価な発光素子を用いた磁場センサーを提供するものである。
The magnetic field strength in the space is once measured as an electrical signal such as a Hall voltage, and then the signal is amplified into an optical signal, which requires a combination of multiple devices, leading to higher costs. Yes.
The present invention improves this point and makes it possible to measure magnetic energy as a direct optical signal, and by simply converting the magnetic field strength into an optical signal by using the magnetic field dependence of the emission luminance of ELD, the present invention is simple. It is an object of the present invention to provide a magnetic field sensor having a simple structure, excellent in stability and luminous efficiency, and using an inexpensive light emitting element.
１）透明基板上に形成した正極となる透明電極、該透明電極の上に形成したホール輸送層、ホール輸送層の上に形成したアルミキノリノール錯体又はこれを含む有機物からなる発光層、さらにその上に負極となる電極が形成されている磁場センサーであって、磁場によって発光強度が変化する発光素子を用い、磁場強度を光信号に直接変換することを特徴とする磁場センサー、２）発光層に発光効率を高める色素がドーピングされていることを特徴とする１）記載の磁場センサー、３）発光層に発光効率を高める色素がドーピングされているアルミキノリノール錯体又はこれを含む有機物からなる発光層上に、さらに色素がドーピングされていないアルミキノリノール錯体又はこれを含む有機物からなる発光層が形成されていることを特徴とする２）記載の磁場センサー、４）色素がクマリンであることを特徴とする２）又は３）記載の磁場センサー、を提供する。 1) a transparent electrode to be a positive electrode formed on a transparent substrate, a hole transport layer formed on the transparent electrode, an aluminum quinolinol complex formed on the hole transport layer or a light emitting layer made of an organic material containing the same, and further thereon A magnetic field sensor in which an electrode serving as a negative electrode is formed using a light emitting element whose light emission intensity changes depending on the magnetic field, and directly converting the magnetic field intensity into an optical signal, and 2) a light emitting layer 1. A magnetic field sensor according to 1) , wherein a dye for increasing the luminous efficiency is doped; 3) an aluminum quinolinol complex doped with a dye for increasing the luminous efficiency in the light emitting layer or an organic layer containing the same. Further, a light emitting layer made of an aluminum quinolinol complex not doped with a dye or an organic substance containing the same is formed. 2) The magnetic field sensor according to 2) or 4), wherein the dye is coumarin.
本発明の発光素子により、発光輝度の磁場依存性を用いて、磁場強度を光信号に直接変換することが可能となり、これにより、単純な構造を持ち、安定性及び発光効率に優れ、かつ安価な磁場センサーを提供することができるという優れた効果を有する。 The light-emitting element of the present invention makes it possible to directly convert the magnetic field intensity into an optical signal using the magnetic field dependence of the emission luminance, and thus has a simple structure, excellent stability and luminous efficiency, and low cost. It is possible to provide an excellent magnetic field sensor.
本発明における磁場センサー（有機ＥＬＤ）の基本構造を図１に示す。有機ELDにおいては基板上に形成された厚さ数百〜数千オングストロングの有機発光層薄膜を一対の電極が対向して挟む構造をとっており、その電極の一方から電子を、他方から正孔を注入して、有機発光層内部で電子と正孔が再結合した時に光が発生する機構となっている。
最近、アルミキノリノール錯体をフラットパネルディスプレイに用いられるようになったが、このアルミキノリノール錯体を発光層に含む蛍光材料を用いたＥＬ素子においては、磁場に依存した発光強度の変化が起こることは全く知られていなかった。
The basic structure of the magnetic field sensor (organic ELD) in the present invention is shown in FIG. An organic ELD has a structure in which a pair of electrodes are sandwiched between organic light emitting layer thin films with a thickness of several hundred to several thousand angstroms formed on a substrate, with electrons from one of the electrodes and positive from the other. Light is generated when holes are injected and electrons and holes are recombined inside the organic light emitting layer.
Recently, an aluminum quinolinol complex has been used for a flat panel display. However, in an EL element using a fluorescent material containing the aluminum quinolinol complex in a light emitting layer, a change in emission intensity depending on a magnetic field does not occur at all. It was not known.
本発明らは、アルミキノリノール錯体（代表例は、Ａｌｑ３）を含む有機物が、発光輝度の磁場依存性があることを知見し、これを用いることにより磁場強度を光信号に直接変換することで、単純な構造を持ち、安価な磁場センサーを製造することができるとの確証を得た。 The present inventors have found that an organic substance containing an aluminum quinolinol complex (typically, Alq3) has a magnetic field dependency of emission luminance, and by using this, the magnetic field strength is directly converted into an optical signal. We have confirmed that it is possible to manufacture an inexpensive magnetic field sensor with a simple structure.
本発明の有機ＥＬＤにおいては、まずガラス等の透明基板上に、ＩＴＯ（＝Indium tin oxide, Ｉｎ２Ｏ３−ＳｎＯ２）やＩＺＯ（＝Indium zinc oxide, Ｉｎ２Ｏ３−ＺｎＯ２）等の透明電極を正極として形成する。
次に、正極の上に有機発光層を一様に形成する。ここにいう有機発光層には、純然たる電子と正孔の再結合による光発生層以外に、発生した光を受けて二次的な蛍光を発生する層や、電子輸送層，正孔輸送層，電子注入層，正孔注入層，正孔阻止層，電子阻止層等の既に知られている各種機能層を一括して、ここでは有機発光層と呼ぶことにする。
In the organic ELD of the present invention, first, on a transparent substrate such as glass, ITO (= Indium tin oxide, In 2 O 3 —SnO 2 ), IZO (= Indium zinc oxide, In 2 O 3 —ZnO 2 ), etc. A transparent electrode is formed as a positive electrode.
Next, an organic light emitting layer is uniformly formed on the positive electrode. The organic light emitting layer mentioned here includes a layer that generates secondary fluorescence by receiving generated light, in addition to a light generation layer by pure electron-hole recombination, an electron transport layer, a hole transport layer Various known functional layers such as an electron injection layer, a hole injection layer, a hole blocking layer, and an electron blocking layer are collectively referred to herein as an organic light emitting layer.
従って、そこに含まれる化合物や層の数、種類等は適宜選択することができる。本発明は、これらを全て含むものである。
本発明においては、上記の通り発光層中にアルミキノリノール錯体の有機物を含むが、有機発光層内部の構成又はその他の一般的な磁場センサーとしての素子基本構造については、特に説明を要しないために省略する。
次に、その上に金属（例えばアルミニウム）膜の層を陰極として形成する。
Accordingly, the number and types of compounds and layers contained therein can be appropriately selected. The present invention includes all of these.
In the present invention, an organic material of an aluminum quinolinol complex is contained in the light emitting layer as described above, but the configuration inside the organic light emitting layer or other element basic structure as a general magnetic field sensor is not particularly required for explanation. Omitted.
Next, a metal (for example, aluminum) film layer is formed thereon as a cathode.
このように形成された有機ＥＬＤ素子の有機層内部では、一重項励起子と三重項励起子が存在し、一重項励起子の一部は蛍光となって外部に光信号を送ることになる。
アルミキノリノール錯体等を用いたＥＬＤにおいては、工業的応用においてはアモルファス膜が利用されること、蛍光が発光の殆どを占めると従来まで考えられていため、上記のように磁場に依存した発光強度変化をすることは知られてはいなかった。
しかしながら、本発明では、アルミキノリノール錯体を用いたＥＬＤにおいては、磁場の存在により発光強度が変化し、磁場センサーとして利用可能であることを示すものである。
Inside the organic layer of the organic ELD element formed in this way, singlet excitons and triplet excitons exist, and some of the singlet excitons become fluorescence and send an optical signal to the outside.
In ELDs using aluminum quinolinol complexes, etc., it has been conventionally considered that amorphous films are used in industrial applications, and fluorescence accounts for most of the emission. It was not known to do.
However, in the present invention, in ELD using an aluminum quinolinol complex, the light emission intensity changes due to the presence of a magnetic field, which indicates that it can be used as a magnetic field sensor.
有機ＥＬＤにおいては外部への光取り出し効率を高めるために、濃度消光を防ぐ色素を発光層中にドープされているが、アルミキノリノール錯体を用いたＥＬＤにおいても同様に、クマリン、ルブレン、スクアリリウムなどが有効である。
本発明のアルミキノリノール錯体を用いたＥＬＤを磁場センサーとして利用する場合には、クマリンを色素として１０Ｖｏｌ％以下、特に１〜５Ｖｏｌ％程度含有させることが好ましい。
In the organic ELD, a dye for preventing concentration quenching is doped in the light emitting layer in order to increase the light extraction efficiency to the outside. Similarly, in the ELD using an aluminum quinolinol complex, coumarin, rubrene, squarylium, etc. It is valid.
When the ELD using the aluminum quinolinol complex of the present invention is used as a magnetic field sensor, it is preferable to contain coumarin as a pigment in an amount of 10 Vol% or less, particularly about 1 to 5 Vol%.
次に、実施例について説明する。なお、以下に示す実施例については、本発明の理解を容易にするためのものであり、本発明を制限するものではない。すなわち、本発明の技術思想の基づく改変又は他の実施態様は、全て本発明に含まれるものである。 Next, examples will be described. In addition, about the Example shown below, it is for making an understanding of this invention easy, and does not restrict | limit this invention. In other words, all modifications or other embodiments based on the technical idea of the present invention are included in the present invention.
図２に示す素子構成の有機ＥＬＤを作成した。作成プロセル条件、手順を以下に示す。まず、ガラス基板上に１００ｎｍのＩＴＯをスパッタリング法にて形成した。
この際、ＩＴＯの抵抗値下げるため、Ａｒ＝９７ｓｃｃｍ、Ｏ２＝３ｓｃｃｍの流量とし、Ｓｎが６原子パーセント入ったＩｎ２Ｏ３ターゲットを用いて、基板温度３００°ＣでＤＣスパッタにより作成した。
この上に、以下の有機層、負極電極層を１０−４Ｐａ程度まで真空度を高めた真空チャンバー内で抵抗加熱によって真空蒸着した。
有機層はホール輸送性のあるα―ＮＰＤ（Ｎ，Ｎ′−ｄｉ−（α−ｎａｐｈｔｈｙｌ）−Ｎ，Ｎ′−ｄｉｐｈｅｎｙｌ−１，１′−ｂｉｐｈｅｎｙｌ−４，４′−ｄｉａｍｉｎｅ）を８０ｎｍ、発光特性と電子輸送特性を有するＡｌｑ３、６０ｎｍからなる。その上に、金属電極層として、１００ｎｍのＡｌを成膜した。
An organic ELD having the element configuration shown in FIG. 2 was prepared. The creation process conditions and procedures are shown below. First, ITO having a thickness of 100 nm was formed on a glass substrate by a sputtering method.
At this time, in order to lower the resistance value of ITO, the flow rate was Ar = 97 sccm, O 2 = 3 sccm, and an In 2 O 3 target containing 6 atomic percent of Sn was used and DC sputtering was performed at a substrate temperature of 300 ° C.
On top of this, the following organic layer and negative electrode layer were vacuum deposited by resistance heating in a vacuum chamber whose degree of vacuum was increased to about 10 −4 Pa.
The organic layer emits α-NPD (N, N′-di- (α-naphthyl) -N, N′-diphenyl-1,1′-biphenyl-4,4′-diaminine) having a hole transporting property at 80 nm. It consists of Alq3, 60 nm, which has characteristics and electron transport characteristics. On top of this, 100 nm of Al was deposited as a metal electrode layer.
実施例１と同様な方法で、ＩＴＯ層、ホール輸送層（α―ＮＰＤ）をガラス基板上に形成した後、クマリン（Ｃ５４５Ｔ）が４Ｖｏｌ％程度含まれるＡｌｑ３層を膜厚３０ｎｍ、発光層として形成した。
具体的には、１０−４Ｐａ程度まで真空度を高めた真空蒸着装置内で、クマリン（Ｃ５４５Ｔ）とＡｌｑ３の入ったそれぞれのボートを同時に加熱することで、前記のクマリン（Ｃ５４５Ｔ）が４Ｖｏｌ％程度含まれるＡｌｑ３層を作成した。
その上に、純粋なＡｌｑ３層を膜厚３０ｎｍ、電子輸送層として形成した。その上に、金属電極層として、１００ｎｍのＡｌを成膜した。
After the ITO layer and the hole transport layer (α-NPD) are formed on the glass substrate in the same manner as in Example 1, an Alq3 layer containing about 4 Vol% of coumarin (C545T) is formed as a light emitting layer with a thickness of 30 nm. did.
Specifically, the coumarin (C545T) is 4 Vol% by simultaneously heating each boat containing coumarin (C545T) and Alq3 in a vacuum deposition apparatus in which the degree of vacuum is increased to about 10 −4 Pa. An Alq3 layer included to some extent was created.
On top of this, a pure Alq3 layer was formed as an electron transport layer with a thickness of 30 nm. On top of this, 100 nm of Al was deposited as a metal electrode layer.
次に、上記実施例１と２で作成した有機ＥＬＤ素子の発光効率の磁場依存性を評価した。素子の劣化の原因として酸素や水が問題なので、その要因を除くため真空チャンバーから取り出し後、乾燥窒素で満たされたグローブボックス内で、ガラスカバーによる封止を行った。
ガラスカバーとガラス基板の接着には、紫外線効果樹脂を用いた。
Next, the magnetic field dependence of the luminous efficiency of the organic ELD elements prepared in Examples 1 and 2 was evaluated. Since oxygen and water are the causes of deterioration of the element, in order to remove the cause, after taking out from the vacuum chamber, sealing with a glass cover was performed in a glove box filled with dry nitrogen.
An ultraviolet effect resin was used for bonding the glass cover and the glass substrate.
ＩＴＯ側を正極にＡｌ側を負極にして電圧を印加し、輝度の測定を行った。実施例１で作成した有機ＥＬＤ素子については、一定の電流量（１２５０ｍＡ／ｃｍ２）を流し、その輝度の磁場依存性を測定した。
磁場強度は０ガウスから５００ガウスまで変化させた。磁場が０ガウスの時の輝度を基準にした磁場による輝度の変化を図３に示す。
１００ガウス程度の磁場強度で発光輝度の変化量は飽和し、２％程度の輝度変化が磁場によって起こることがわかる。
A voltage was applied with the ITO side as the positive electrode and the Al side as the negative electrode, and the luminance was measured. About the organic ELD element produced in Example 1, a fixed electric current (1250 mA / cm < 2 >) was passed, and the magnetic field dependence of the brightness | luminance was measured.
The magnetic field intensity was changed from 0 gauss to 500 gauss. FIG. 3 shows a change in luminance due to the magnetic field based on the luminance when the magnetic field is 0 gauss.
It can be seen that the amount of change in emission luminance is saturated at a magnetic field intensity of about 100 Gauss, and a luminance change of about 2% is caused by the magnetic field.
実施例２についても実施例１と同様な測定を行った。但し、電流量は、２５ｍＡ／ｃｍ２と１２５ｍＡ/ ｃｍ２とした。
図５に輝度の磁場依存性を示す。１００ガウス程度の磁場強度で、４％程度の輝度変化が起きていることがわかる。
For Example 2, the same measurement as in Example 1 was performed. However, the amount of current was set to 25 mA / cm 2 and 125 mA / cm 2 .
FIG. 5 shows the magnetic field dependence of luminance. It can be seen that a luminance change of about 4% occurs at a magnetic field intensity of about 100 Gauss.
以上の実施例からわかるように、本発明内で例示される有機ＬＥＤ素子は、磁場によってその発光強度を変化させ、磁場センサーとして応用できることがわかる。
なお本発明の結果から、アルミキノリノール錯体以外にも蛍光性材料である錯体など磁場依存性が存在し、早い緩和過程を持つ燐光材料を使用することができる。
As can be seen from the above examples, the organic LED element exemplified in the present invention can be applied as a magnetic field sensor by changing its emission intensity by a magnetic field.
From the results of the present invention, it is possible to use a phosphorescent material having a magnetic field dependency such as a complex which is a fluorescent material in addition to the aluminum quinolinol complex and having a fast relaxation process.
本発明の発光素子により、発光輝度の磁場依存性を用いて、磁場強度を光信号に直接変換することが可能となり、これにより、単純な構造を持ち、安定性及び発光効率に優れ、かつ安価な磁場センサーとして有用である。 The light-emitting element of the present invention makes it possible to directly convert the magnetic field intensity into an optical signal using the magnetic field dependence of the emission luminance, and thus has a simple structure, excellent stability and luminous efficiency, and low cost. It is useful as a magnetic field sensor.
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