JP2666428B2 - Organic thin film EL device - Google Patents
Organic thin film EL deviceInfo
- Publication number
- JP2666428B2 JP2666428B2 JP29128488A JP29128488A JP2666428B2 JP 2666428 B2 JP2666428 B2 JP 2666428B2 JP 29128488 A JP29128488 A JP 29128488A JP 29128488 A JP29128488 A JP 29128488A JP 2666428 B2 JP2666428 B2 JP 2666428B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- organic
- film layer
- organic thin
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 75
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000011368 organic material Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- BJGSIJBRIKSCMX-UHFFFAOYSA-N N-(2-cyclohexylphenyl)-2-methyl-N-(2-methylphenyl)aniline Chemical class C1(=C(C=CC=C1)N(C1=C(C=CC=C1)C)C1=C(C=CC=C1)C1CCCCC1)C BJGSIJBRIKSCMX-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000004697 chelate complex Chemical class 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は平面光源やディスプレイ等に使用される有機
薄膜EL素子に関するものである。Description: TECHNICAL FIELD The present invention relates to an organic thin film EL device used for a flat light source, a display, and the like.
有機物質を原料としたEL（電界発光）素子は、安価な
大面積フルカラー表示素子を実現するものとして注目を
集めた。例えばアントラセンやペリレンをLB法や真空蒸
着法等で薄膜化し、直流駆動の有機薄膜EL素子が製造さ
れ、その発光特性が研究されている。しかし、従来の有
機薄膜EL素子は駆動電圧が高く、その発光輝度・効率が
無機薄膜EL素子のそれぞれと比べ低かった。また、発光
特性の劣化も著しく実用レベルのものはできなかった。2. Description of the Related Art Electroluminescent (EL) devices made of organic materials have attracted attention for realizing inexpensive large-area full-color display devices. For example, anthracene or perylene is thinned by the LB method, the vacuum evaporation method, or the like, and a DC-driven organic thin film EL device is manufactured, and the light emission characteristics thereof are being studied. However, the conventional organic thin-film EL device has a high driving voltage, and its emission luminance and efficiency are lower than those of each of the inorganic thin-film EL devices. In addition, the emission characteristics were remarkably deteriorated, and a practical level was not obtained.
ところが、最近有機薄膜を２層構造にした新しいタイ
プの有機薄膜EL素子が報告され強い感心を集めている
（アプライト・フィジックス・レターズ、51巻、913ペ
ージ、1987年）。この新しいタイプの有機薄膜EL素子
は、第３図に示すように、強い蛍光を発する金属キレー
ト錯体を有機蛍光体薄膜24に使用し、アミン系材料を正
孔伝導性有機物の正孔注入層23に使用しており、明るい
緑色発光が得られる。６〜7Vの直流印加で数100cd/m2の
輝度を得ている。最大発光効率は1.5lm/Wと、実用レベ
ルに近い性能を持っている。However, recently, a new type of organic thin film EL device in which an organic thin film has a two-layer structure has been reported and attracted a great deal of interest (Apprite Physics Letters, Vol. 51, p. 913, 1987). As shown in FIG. 3, this new type of organic thin film EL element uses a metal chelate complex that emits strong fluorescence for the organic phosphor thin film 24 and uses an amine-based material as a hole-injecting layer 23 made of a hole-conductive organic substance. And emits bright green light. A luminance of several 100 cd / m 2 is obtained by applying a direct current of 6 to 7 V. The maximum luminous efficiency is 1.5lm / W, which is close to the practical level.
前述したように、有機蛍光体薄膜と有機物の正孔注入
層が２層積層した構造を有している新しい有機薄膜EL素
子は、最大発光輝度が1000cd/m2以上の明るい緑色発光
を示す。しかし、この素子は電流駆動型であるために上
記の輝度を得るために100mA/cm2以上の電流を流さなけ
ればならない。この結果電極部での電力損（ジュール
熱）が、素子サイズが大きくなるほど無視できないほど
に増大し、全体としての効率低下を招いていた。またこ
の有機薄膜EL素子で発生したジュール熱は素子劣化を速
め、この素子の実用化を困難にしている。更に、電圧印
加時間の経過とともに素子に流れる電流が減少し、この
結果発光輝度が低下していった。As described above, the new organic thin-film EL device having a structure in which the organic phosphor thin film and the organic hole injection layer are stacked in two layers emits bright green light with a maximum emission luminance of 1000 cd / m 2 or more. However, since this element is a current drive type, a current of 100 mA / cm 2 or more must be passed to obtain the above-mentioned luminance. As a result, the power loss (Joule heat) at the electrode portion increases to a non-negligible extent as the element size increases, resulting in a decrease in overall efficiency. Further, Joule heat generated in the organic thin film EL element accelerates element deterioration, making practical use of this element difficult. Further, the current flowing through the element decreased with the passage of the voltage application time, and as a result, the light emission luminance decreased.
従って、素子発光効率を更に向上させ、且つ劣化速度
を低下させることがこの有機薄膜EL素子の実用化の上で
非常に重要である。しかし、従来の技術ではこれらの問
題解決が困難であった。Therefore, it is very important to further improve the luminous efficiency of the device and to reduce the rate of deterioration in putting this organic thin film EL device to practical use. However, it has been difficult to solve these problems with the conventional technology.
本発明は上述の点を鑑みてなされたもので、発光効
率、信頼性に選れた有機薄膜EL素子を提供することを目
的としている。The present invention has been made in view of the above points, and has as its object to provide an organic thin-film EL device that is selected for its luminous efficiency and reliability.
前述の問題点を解決するために本発明が提供する手段
は、少なくとも一方が透明であるが一対の電極間に順次
Ｐ型無機半導体薄膜層、正孔伝導性の有機薄膜層および
有機蛍光体薄膜層を積層した構造を有する事を特徴とし
た有機薄膜EL素子である。Means provided by the present invention in order to solve the above-mentioned problems is to provide a P-type inorganic semiconductor thin film layer, a hole conductive organic thin film layer, and an organic phosphor thin film between at least one of which is transparent, in sequence. An organic thin-film EL device having a structure in which layers are stacked.
２層構造の有機薄膜EL素子の発光メカニズムは次のよ
うであると考えられている。即ち、ITOなどの正孔注入
電極から有機の正孔注入層に正孔が注入され、その層を
伝導して有機蛍光体薄膜層に正孔が注入される。一方、
仕事関数の低い金属を主体とした電子注入電極から電子
が有機蛍光体薄膜層に注入される。注入された電子は有
機蛍光体薄膜層を伝導し、有機の正孔注入層との界面で
正孔と再結合して一重項励起子を生成する。この結果発
光を生じる。発光スペクトルは有機蛍光体薄膜層の蛍光
スペクトルと一致し、前記一重項励起子は有機蛍光体薄
膜層で生成されていることが確認されている。The light emission mechanism of the organic EL device having a two-layer structure is considered to be as follows. That is, holes are injected into the organic hole injection layer from a hole injection electrode such as ITO, and the holes are injected into the organic phosphor thin film layer through the layer. on the other hand,
Electrons are injected into the organic phosphor thin film layer from an electron injection electrode mainly composed of a metal having a low work function. The injected electrons are conducted through the organic phosphor thin film layer and recombine with holes at the interface with the organic hole injection layer to generate singlet excitons. This results in light emission. The emission spectrum coincides with the fluorescence spectrum of the organic phosphor thin film layer, and it has been confirmed that the singlet exciton is generated in the organic phosphor thin film layer.
有機薄膜EL素子の発光効率を向上させるには、正孔及
び電子注入電極から正孔注入層及び有機蛍光体薄膜層へ
の電荷注入効率、正孔注入層及び有機蛍光体薄膜層内で
の電荷輸送効率、有機蛍光体薄膜層内での励起子生成及
び発光遷移確率を高めることが重要である。この点をふ
まえ更に発光効率の高い有機薄膜EL素子を鋭意研究し
た。In order to improve the luminous efficiency of the organic thin film EL device, the charge injection efficiency from the hole and electron injection electrode to the hole injection layer and the organic phosphor thin film layer, the charge in the hole injection layer and the organic phosphor thin film layer It is important to increase the transport efficiency, the exciton generation in the organic phosphor thin film layer and the emission transition probability. Based on this point, we studied organic thin-film EL devices with higher luminous efficiency.
キャリアー（正孔または電子）密度及び移動度がとも
に有機の正孔注入層より格段に優れた無機物の低抵抗Ｐ
型薄膜半導体を有機薄膜EL素子の正孔注入層として使用
し、正孔注入電極からの正孔注入効率及び正孔注入層内
の正孔輸送効率を高める事が可能となった。低抵抗Ｐ型
薄膜半導体材料としては非晶質あるいは微結晶のSi,Si
1-XCX等がある。Low resistance P of inorganic material, both carrier (hole or electron) density and mobility are much better than organic hole injection layer
Using a thin film semiconductor as a hole injection layer of an organic thin film EL device, it has become possible to increase the hole injection efficiency from the hole injection electrode and the hole transport efficiency in the hole injection layer. As low-resistance P-type thin film semiconductor materials, amorphous or microcrystalline Si, Si
1-X C X and so on.
しかしこの無機の低抵抗Ｐ型半導体を使用した場合、
有機薄膜EL素子の発光効率を十分高めることができなか
った。However, when this inorganic low-resistance P-type semiconductor is used,
The luminous efficiency of the organic thin film EL device could not be sufficiently increased.
この無機の低抵抗Ｐ型半導体層と有機蛍光体薄膜層と
の界面に有機の正孔注入層を挿入すると、有機薄膜EL素
子の発光効率は格段に向上した。この正孔伝導性の有機
薄膜層（有機正孔注入層）を挿入することによる発光効
率向上のメカニズムは明確ではないが、次のように考え
ている。即ち、有機蛍光体薄膜層と無機のＰ型半導体薄
膜層との界面に正孔伝導性有機薄膜層が無い場合、界面
でのエネルギーポテンシャルの関係から有機蛍光体薄膜
層の界面の電子が無機の低抵抗Ｐ型半導体側に流れやす
くなった。その結果Ｐ型無機半導体薄膜層の界面に近い
ところの有機蛍光体薄膜層内で電子密度が低下し、電子
・正孔再結合が少なくなった。When an organic hole injecting layer was inserted at the interface between the inorganic low-resistance P-type semiconductor layer and the organic phosphor thin film layer, the luminous efficiency of the organic thin film EL device was significantly improved. Although the mechanism of improving the luminous efficiency by inserting the hole conductive organic thin film layer (organic hole injection layer) is not clear, it is considered as follows. That is, when there is no hole-conducting organic thin film layer at the interface between the organic phosphor thin film layer and the inorganic P-type semiconductor thin film layer, electrons at the interface of the organic phosphor thin film layer are inorganic due to the energy potential at the interface. It easily flows to the low resistance P-type semiconductor side. As a result, the electron density was reduced in the organic phosphor thin film layer near the interface of the P-type inorganic semiconductor thin film layer, and the electron-hole recombination was reduced.
しかし界面にハンドギャップが広く、比較的高抵抗な
正孔伝導性有機薄膜を挿入することにより電子を有機蛍
光体薄膜層界面に多量に蓄積させることができるように
なった。その結果有機蛍光体薄膜層内での電子・正孔再
結合が多くなった。However, by inserting a hole conductive organic thin film having a wide hand gap at the interface and having a relatively high resistance, a large amount of electrons can be accumulated at the interface of the organic phosphor thin film layer. As a result, electron-hole recombination in the organic phosphor thin film layer increased.
本発明により、従来の有機薄膜EL素子に比べ効率は２
から５倍改善された。従来よりも少ない電流で発光する
ため、ジュール熱の発生量が少なくなった。この結果、
素子発熱にともなう発光特性の劣化も少なくなった。According to the present invention, the efficiency is 2 compared to the conventional organic thin film EL device.
5 times better than Since light is emitted with a smaller current than before, the amount of generated Joule heat is reduced. As a result,
Deterioration of light emission characteristics due to heat generation of the element was reduced.
なお、挿入する正孔伝導性の有機薄膜層の厚さは20Å
から2000Åの間であれば充分に効果が認められた。有機
薄膜の厚さが20Å未満であるとトンネル電流が流れはじ
め有機薄膜層挿入の効果がなくなった。一方有機薄膜層
の厚さが2000Å以上であると、この有機薄膜層での電力
損失が無視できなくなる。The thickness of the hole-conductive organic thin film layer to be inserted is 20 mm.
Between 2000 and 2000 mm, the effect was fully recognized. When the thickness of the organic thin film was less than 20 mm, a tunnel current began to flow and the effect of inserting the organic thin film layer was lost. On the other hand, when the thickness of the organic thin film layer is 2000 mm or more, the power loss in the organic thin film layer cannot be ignored.
また、従来の素子では通電により電極と有機正孔注入
層の界面に電荷のトラップ層が形成され、これが原因で
素子に流せる電流が減少し、発光も低下した。しかし、
本発明による有機薄膜EL素子では上記のような減少は極
めて少なく、長時間素子を安定に発光させることが可能
であった。In addition, in the conventional device, a current trapping layer was formed at the interface between the electrode and the organic hole injecting layer due to energization. Due to this, the current that could flow through the device was reduced, and light emission was also reduced. But,
In the organic thin film EL device according to the present invention, the decrease as described above was extremely small, and the device could emit light stably for a long time.
以下実施例を以て、本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail with reference to Examples.
有機蛍光体としてトリス（８−ハイドロキシキノリ
ン）アルミニウムを用いた。第１図に示すように、ガラ
ス基板１上に透明電極２を形成してから無機半導体薄膜
層３としてｐ型の低抵抗アモルファスSiX-1CXを1000Å
形成した。次に正孔伝導性の有機薄膜層４として1,1−
ビス（４−N,N−ジトリルアミノフェニル）シクロヘキ
サンを無機半導体薄膜層上に350Å蒸着した。その後有
機蛍光体薄膜５と背面金属電極６をそれぞれ700Å、200
0Å形成して有機薄膜EL素子が完成する。Tris (8-hydroxyquinoline) aluminum was used as the organic phosphor. As shown in FIG. 1, after forming a transparent electrode 2 on a glass substrate 1, a p-type low-resistance amorphous Si X-1 C X is formed as an inorganic semiconductor thin film layer 3 at 1000 °.
Formed. Next, as a hole conductive organic thin film layer 4, 1,1-
Bis (4-N, N-ditolylaminophenyl) cyclohexane was deposited at 350 ° on the inorganic semiconductor thin film layer. Thereafter, the organic phosphor thin film 5 and the back metal electrode 6 are respectively
0 ° is formed to complete the organic thin film EL device.
この素子の発光特性を乾燥窒素中で測定したところ、
第２図に示すように、約8Vの直流電圧の印加で300cd/m2
の発光が得られた。従来の素子に比べ発光輝度・効率が
改善されていることがわかる。この有機薄膜EL素子を電
流密度1mA/cm2の状態でエージング試験をしたところ輝
度半減時間は1000時間以上であった。従来の素子では10
0から300時間であったから、この素子の信頼性は大幅に
改善されている。When the light emission characteristics of this device were measured in dry nitrogen,
As shown in FIG. 2, 300 cd / m 2 by applying a DC voltage of about 8 V
Was obtained. It can be seen that the light emission luminance and efficiency are improved as compared with the conventional device. When an aging test was performed on the organic thin film EL device at a current density of 1 mA / cm 2 , the luminance half life was 1000 hours or more. 10 for conventional elements
Since the time was from 0 to 300 hours, the reliability of the device was greatly improved.
本発明はトリス（８−ハイドロキシキノリン）アルミ
ニウム有機蛍光体ばかりでなく他の有機蛍光体でも同様
な効果が認められた。また低抵抗のＰ型無機半導体薄膜
材料もアモルファスSiX-1CXばかりでなく他にSiやCul,Z
nTe等でも同様な効果が認められた。更に正孔伝導性の
有機薄膜層材料も本実施例で使用した1,1−ビス（４−
N,N−ジトリルアミノフェニル）シクロヘキサン以外
に、他のジアミン形の誘導体やトリフェニルメタン系等
の正孔伝導性有機物で効果が認められた。In the present invention, not only the tris (8-hydroxyquinoline) aluminum organic phosphor but also other organic phosphors exhibited the same effect. In addition, low-resistance P-type inorganic semiconductor thin film materials include not only amorphous Si X-1 C X but also Si, Cul, Z
Similar effects were observed with nTe and the like. Further, the hole-conductive organic thin film layer material used in this example was 1,1-bis (4-
In addition to (N, N-ditolylaminophenyl) cyclohexane, other diamine derivatives and hole conducting organic substances such as triphenylmethane were effective.
このように本発明で重要な点は、低抵抗のＰ型無機半
導体薄膜層、正孔導電性の有機薄膜層および有機蛍光体
薄膜層を順次積層した構造を有することを特徴とした有
機薄膜EL素子であり、有機薄膜EL素子を構成する材料そ
のものを限定するものではない。As described above, the important point of the present invention is that the organic thin film EL has a structure in which a low-resistance P-type inorganic semiconductor thin film layer, a hole conductive organic thin film layer, and an organic phosphor thin film layer are sequentially laminated. It is an element and does not limit the material itself constituting the organic thin film EL element.
以上説明したように本発明により発光特性及び信頼性
を大幅に改善することができた。As described above, according to the present invention, the light emission characteristics and the reliability can be greatly improved.
このように、本発明により有機薄膜EL素子を実用レベ
ルまで引き上げることができ、その工業的価値は高い。As described above, the present invention makes it possible to raise the organic thin film EL element to a practical level, and its industrial value is high.
第１図は本発明の実施例に使用した有機薄膜EL素子の断
面構造を示す図、第２図は本発明により製造した有機薄
膜EL素子の発光特性を従来素子と比較して示した図、第
３図は従来の有機薄膜EL素子の断面構造を示した図であ
る。 １……ガラス基板、２……透明電極、３……Ｐ型無機半
導体薄膜層、４……正孔伝導性の有機薄膜層、5,24……
有機蛍光体薄膜層、６……背面電極、23……有機正孔注
入層。FIG. 1 is a diagram showing a cross-sectional structure of an organic thin-film EL device used in an example of the present invention, FIG. 2 is a diagram showing light-emitting characteristics of an organic thin-film EL device manufactured according to the present invention in comparison with a conventional device, FIG. 3 is a diagram showing a cross-sectional structure of a conventional organic thin film EL device. DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 2 ... Transparent electrode, 3 ... P-type inorganic semiconductor thin film layer, 4 ... Hole conductive organic thin film layer, 5,24 ...
Organic phosphor thin film layer 6, back electrode 23, organic hole injection layer.
フロントページの続き (56)参考文献 特開 昭61−47097（ＪＰ，Ａ) 特開 昭62−93897（ＪＰ，Ａ) 特開 平２−10693（ＪＰ，Ａ) 特開 平２−126593（ＪＰ，Ａ) 特開 昭59−154793（ＪＰ，Ａ) 特開 昭53−50689（ＪＰ，Ａ) 実開 昭63−129995（ＪＰ，Ｕ)Continuation of the front page (56) References JP-A-61-47097 (JP, A) JP-A-62-93897 (JP, A) JP-A-2-10693 (JP, A) JP-A-2-126593 (JP) JP-A-59-154793 (JP, A) JP-A-53-50689 (JP, A) JP-A-63-129995 (JP, U)
Claims (1)
に順次Ｐ型無機半導体薄膜層、正孔伝導性の有機薄膜層
および有機蛍光体薄膜層を積層した構造を有する事を特
徴とした有機薄膜EL素子。An organic material having a structure in which a P-type inorganic semiconductor thin film layer, a hole conductive organic thin film layer and an organic phosphor thin film layer are sequentially laminated between a pair of electrodes at least one of which is transparent. Thin film EL element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29128488A JP2666428B2 (en) | 1988-11-18 | 1988-11-18 | Organic thin film EL device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29128488A JP2666428B2 (en) | 1988-11-18 | 1988-11-18 | Organic thin film EL device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02139892A JPH02139892A (en) | 1990-05-29 |
| JP2666428B2 true JP2666428B2 (en) | 1997-10-22 |
Family
ID=17766885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29128488A Expired - Lifetime JP2666428B2 (en) | 1988-11-18 | 1988-11-18 | Organic thin film EL device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2666428B2 (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1990005998A1 (en) * | 1988-11-21 | 1990-05-31 | Mitsui Toatsu Chemicals, Inc. | Light-emitting element |
| JPH02207488A (en) * | 1989-02-07 | 1990-08-17 | Mitsui Toatsu Chem Inc | Thin film type luminescent element |
| JP4837811B2 (en) | 1998-04-09 | 2011-12-14 | 出光興産株式会社 | Organic electroluminescence device |
| KR20120062911A (en) | 2003-09-26 | 2012-06-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Composite material and method for manufacturing composite material |
| EP2276088B1 (en) | 2003-10-03 | 2018-02-14 | Semiconductor Energy Laboratory Co, Ltd. | Light emitting element, and light emitting device using the light emitting element |
| US8796670B2 (en) | 2003-12-26 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element |
| JP2006295104A (en) | 2004-07-23 | 2006-10-26 | Semiconductor Energy Lab Co Ltd | Light emitting element and light emitting device using the same |
| KR101436791B1 (en) | 2004-10-29 | 2014-09-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Composite material, light-emitting element, light-emitting device, and manufacturing method thereof |
| US8420227B2 (en) | 2005-03-23 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Composite material, light emitting element and light emitting device |
| US7851989B2 (en) | 2005-03-25 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| EP1724852A3 (en) | 2005-05-20 | 2010-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
| US8334057B2 (en) | 2005-06-08 | 2012-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
| US7745989B2 (en) | 2005-06-30 | 2010-06-29 | Semiconductor Energy Laboratory Co., Ltd | Light emitting element, light emitting device, and electronic apparatus |
| US7635858B2 (en) | 2005-08-10 | 2009-12-22 | Au Optronics Corporation | Organic light-emitting device with improved layer conductivity distribution |
| JP2010153365A (en) | 2008-11-19 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | Light-emitting element, light-emitting device, electronic equipment, and illumination device |
| US8404500B2 (en) | 2009-11-02 | 2013-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting element, light-emitting element, light-emitting device, lighting device, and electronic appliance |
| JP5969216B2 (en) | 2011-02-11 | 2016-08-17 | 株式会社半導体エネルギー研究所 | Light emitting element, display device, lighting device, and manufacturing method thereof |
-
1988
- 1988-11-18 JP JP29128488A patent/JP2666428B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02139892A (en) | 1990-05-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2727620B2 (en) | Organic thin film EL device | |
| JP2666428B2 (en) | Organic thin film EL device | |
| JP2926845B2 (en) | Organic thin film EL device | |
| JP2773297B2 (en) | Organic thin film EL device | |
| Ikai et al. | Highly efficient phosphorescence from organic light-emitting devices with an exciton-block layer | |
| JPH03152184A (en) | El element of organic thin film | |
| Noda et al. | A novel yellow-emitting material, 5, 5′′-bis {4-[bis (4-methylphenyl) amino] phenyl}-2, 2′: 5′, 2′′-terthiophene, for organic electroluminescent devices | |
| TWI422088B (en) | Organic light emitting diode with nano-dots and fabrication method thereof | |
| Kalinowski et al. | Kinetics of charge carrier recombination in organic light-emitting diodes | |
| JP2636341B2 (en) | Organic thin film EL device | |
| KR20020092977A (en) | High efficiency transparent organic light emitting devices | |
| JPH11149985A (en) | Organic electroluminescent device having inorganic electron transport layer | |
| JPH08109373A (en) | Organic thin-film el element | |
| JP3861743B2 (en) | Driving method of electroluminescent element | |
| JPH02305886A (en) | Organic thin-film el element | |
| Li et al. | Degradation of phosphorescent organic light-emitting diodes under pulsed current stressing | |
| Sachnik et al. | Single‐layer blue organic light‐emitting diodes with near‐unity internal quantum efficiency | |
| KR100547055B1 (en) | Organic Electroluminescent Device | |
| JP2581165B2 (en) | Organic thin film EL device | |
| JPH01313892A (en) | Image display device and manufacture thereof | |
| JP3152506B2 (en) | Organic electroluminescent device | |
| JPH07166160A (en) | Organic thin film el element | |
| Soichi et al. | High-efficiency phosphorescent OLEDs using chemically doped layers | |
| JPH10223372A (en) | Organic electroluminescent element and flat panel display using it | |
| Park et al. | Enhanced luminescence in top-gate-type organic light-emitting transistors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080627 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090627 Year of fee payment: 12 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090627 Year of fee payment: 12 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090627 Year of fee payment: 12 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090627 Year of fee payment: 12 |
|
| R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090627 Year of fee payment: 12 |