JP4304674B2 - High-frequency module and communication device using the same - Google Patents

Description

The present invention relates to a radio communication system that transmits and receives signals of two or more different frequencies by sharing one antenna, and a demultiplexing circuit, a switch circuit, a low-pass filter circuit, a coupler circuit, and a high-frequency amplifier circuit are configured on one laminated substrate. The present invention relates to a multiband high-frequency module and a communication device using the same.

For example, EGSM (Extended Global System for Mobile Communications) method and DCS (Digital Cellular System) method, which are popular in Europe, PCS (Personal Communication Service) method, which is popular in the United States, are adopted in Japan. There are various systems using time division multiple access (TDMA) such as PDC (Personal Digital Cellular). With the rapid spread of mobile phones in recent years, especially in major metropolitan areas in developed countries, it is difficult to connect system users in the frequency bands allocated to each system, making it difficult to connect, or connecting in the middle of a call There are problems such as disconnection. Therefore, it has been proposed that the user can use a plurality of systems to increase the number of frequencies that can be substantially used, and further expand the service area and effectively use the communication infrastructure of each system.
Conventionally, as a small and light high-frequency circuit component compatible with a plurality of systems, for example, a dual-band high-frequency switch module used in a portable communication device compatible with two systems of EGSM and DCS is disclosed in Patent Document 1. Patent Document 2 proposes a triple-band compatible high-frequency switch module used in a portable communication device compatible with three systems of EGSM, DCS, and PCS.

FIG. 6 shows an example of a block configuration of a triple band high frequency switch module. Signals in the EGSM frequency band and DCS / PCS frequency band by a demultiplexing circuit Dip (hereinafter sometimes referred to as a demultiplexer or diplexer) connected to the shared antenna ANT terminal The first high-frequency switch SW1 switches between the EGSM transmission terminal Tx and the EGSM reception terminal Rx, and the second high-frequency switch SW2 Switches between the DCS / PCS transmission terminal Tx, the DCS reception terminal Rx, and the PCS reception terminal Rx. The low-pass filters LPF1 and LPF2 are inserted in the transmission path to reduce the amount of harmonic distortion generated by the power amplifier.
Coupler circuits Coupler1 and Coupler2 detect and monitor the output of the power amplifier to enable stable operation. The band pass filters SAW1, SAW2, and SAW3 remove unnecessary frequency components from the received signal from the antenna ANT, and send only the necessary components to the low noise amplifier. Therefore, power amplifiers HPA1 and HPA2 are provided before the EGSM transmission terminal Tx and the DCS / PCS transmission terminal Tx, and low noise amplifiers LNA1 and LNA2 are provided at the subsequent stage of the EGSM reception terminal Rx and the DCS reception terminal Rx and the PCS reception terminal Rx. LNA3 is provided.

In the mobile radio system, a control signal (power control signal) is sent from the base station to the mobile terminal (mobile phone) so that the transmission power is the minimum output necessary for communication in order to avoid interference with other devices. . The output of the high-frequency power amplifier at the transmission side output stage is controlled by an APC (Automatic Power Control) circuit that operates based on this control signal, and the gate voltage is controlled so that it becomes an output necessary for a call. For this reason, a circuit for detecting the power of the power amplifier section is required. Usually, a coupler circuit is used to detect the output of a high-frequency power amplifier. This includes a method of incorporating a single coupler circuit as an external component, and a λ / 4 line on a dielectric substrate forming a high-frequency power amplifier. The structure which directly forms with an electrode pattern using is adopted.

There is still a strong demand for reducing the size and weight of portable communication devices, and parts sharing and modularization of functions are being promoted. For example, the circuit components surrounded by the dotted lines in FIG. 6 are formed by forming transmission lines and capacitors with electrode patterns in a multilayer body in which dielectric sheets such as LTCC (Low Temperature Co-fired Ceramics) are stacked in layers, and forming diodes and the like. This is realized as a multiband antenna switch module ASM mounted on a laminate (see the above-mentioned patent publication). In addition, modularization within the range surrounded by the alternate long and short dash line is also realized by mounting a discrete SAW filter on the laminate.

On the other hand, a power amplifier (high frequency amplifier, high power amplifier, etc.) of about several watts is used on the transmitting side of the portable communication device in order to output a relatively high power signal. Since cellular phones and the like need to be small and have low power consumption, a power amplifier that consumes most of the DC power has high DC-RF power conversion efficiency (also referred to as power added efficiency) and is small. Desired. Especially in mobile phones, the downsizing and high efficiency of power amplifiers can be achieved because the devices are small and the length of talk time per battery charge is an important selling point. It is essential.

An example of a high-frequency module in which the high-frequency amplifier, the antenna switch module, and the coupler are configured on one laminated substrate is disclosed in Patent Document 3. In this example, the coupler is provided with a low-pass filter function, and an interference prevention ground pattern is provided between the power amplifier, the switch circuit, and the coupler. However, this has a problem that a new resonance mode is generated between the coupler and the switch circuit, and a predetermined attenuation characteristic cannot be obtained. Further, it does not mention the output fluctuation of the coupler circuit and the isolation of the transmission signal, and no consideration is given to the arrangement of the main line and sub-line electrode patterns constituting the coupler circuit.

Further, Patent Document 4 discloses a high-frequency module that integrates a coupler that monitors the output power of a high-frequency amplifier and that has different main line and sub-line widths. However, the coupler circuit of this example is a so-called overlap coupler circuit in which a part of the main line and the sub line are arranged and overlapped by a predetermined length. The electrode pattern of the overlapping coupler circuit has a problem in that it is difficult to reduce the size because the arrangement on the dielectric layer is restricted and the space is large.

Japanese Patent Laid-Open No. 11-225088 JP 2000-165288 A JP 2003-8470 A JP 2002-43813 A

Conventionally, it is a permanent problem to further reduce the size of a high-frequency module, to reduce insertion loss, and to improve harmonic attenuation characteristics. Although an example in which a multiband antenna switch circuit, a high-frequency amplifier circuit, and a coupler circuit are modularized on a single laminated substrate can be seen, both Patent Document 3 and Patent Document 4 are provided between the coupler circuit and the switch circuit, particularly in the transmission path. No improvement is shown for isolation from the low-pass filter. In order to improve the attenuation characteristic of the low-pass filter, it is necessary to avoid fluctuations in the output of the coupler circuit and mutual interference of transmission signals.

In view of such problems, the present invention is a high-frequency module in which an antenna switch circuit, a low-pass filter circuit, a coupler circuit, and a high-frequency amplifier circuit are integrated into a laminated substrate, and mainly has an electrode pattern arrangement configuration of the coupler circuit. By reviewing, a small high-frequency module is provided. The present invention also provides a communication device such as a cellular phone using the high frequency module.

The present invention relates to an antenna switch circuit, a low-pass filter circuit, a coupler circuit, and a circuit element formed by laminating a plurality of dielectric layers using a circuit element configured by an electrode pattern and a circuit element mounted on the multilayer substrate. In the high-frequency module in which a high-frequency amplifier circuit is integrated, the coupler circuit has a function of monitoring the output of the high-frequency amplifier circuit, and is disposed between the switch circuit and the high-frequency amplifier circuit. Has a main line and a sub line, and the main line and the sub line are constituted by electrode patterns in the laminated substrate, and the electrode pattern for the main line and the electrode pattern for the sub line are different in the laminated body. Provided in the dielectric layer, and the electrode pattern for the main line and the electrode pattern for the sub line are arranged separately in the vertical direction of the stacking direction. Together and, the high-frequency amplifier circuit 2, the coupler circuit is provided with two, said two couplers circuitry is arranged separately in different areas of the horizontal direction of the dielectric layer for different transmission systems The electrode patterns constituting the main line and the sub line of the two coupler circuits are high-frequency modules arranged so as to be sandwiched between two identical shield electrodes leading to the ground .
In the high-frequency module, the electrode pattern constituting the transmission line of the low-pass filter and the electrode pattern constituting the sub-line are stacked in the stacking direction with respect to the dielectric layer provided with the electrode pattern constituting the main line. It is preferable to arrange | position on the same one side.
Further, in the high-frequency module, it is preferable that a part of the coupler is disposed on a dielectric layer in which a shield electrode that leads to the ground is formed for isolation in the vertical direction of the multilayer substrate.
Furthermore, in the high-frequency module, it is preferable that the respective main lines or sub-lines are arranged substantially symmetrically with respect to the center line of the dielectric layer.

When looking at the arrangement of the electrode pattern constituting the main line and the sub line of the coupler circuit of the present invention, the dielectric layer forming the sub line and the dielectric layer forming the main line are separated in the vertical direction and collectively. Since it is configured, the line lengths of the main line and the sub line can be changed independently and optimized, and the coupling amount can be easily set. In addition, it is possible to apply the phase control by increasing only the main line length.

In the high-frequency module of the present invention, the sub-line of the coupler is formed in a coil shape over two or more different dielectric layers, and two main lines of the coupler are formed below a plurality of dielectric layers constituting the sub-line. It is desirable to form over the above different dielectric layers. Also, it is desirable to form the main line in a coil shape. Thus, by using a so-called coil-type directional coupler, space can be effectively used to reduce the size. And the direction of the current is the same direction, the magnetic field between adjacent transmission lines is strengthened, the coupling rate increases, the line length can be shortened in a small space, and the loss of the signal passing through the main line can be reduced.

In the high frequency module of the present invention, the line width of one of the main line and the sub line of the coupler formed in at least one dielectric layer is different from the width of the other line formed in the other dielectric layer. It is desirable to do so. This is implemented, for example, by making the line width of one of the plurality of dielectric layers forming the sub-line thicker than the line width of the main line provided on the other dielectric layer. By adjusting the line width in this way, the impedance between the elements can be adjusted, and impedance matching can be easily performed. In addition, by forming the line width of either the sub line or the main line large, even if there is a stacking misalignment between the main line and the sub line in the plane direction, the overlap between the main line and the sub line is Since it is alleviated by the difference in width, the variation in coupling amount can be reduced to a practical level.

In the high-frequency module of the present invention, shield electrodes leading to the ground are formed above and below the electrode patterns constituting the main line and the sub line of the coupler circuit, and the electrode patterns constituting the main line and the sub line of the coupler circuit Through-hole electrode leading to the ground between the switch circuit portion in the multilayer substrate and between the electrode pattern constituting the main line and sub-line of the coupler circuit and the high-frequency amplifier circuit portion in the multilayer substrate It is desirable to provide
In this way, shield electrodes having substantially the same effect as the ground electrode are arranged in the vertical direction of the sub-line and the main line, and a column that leads to the ground between the switch circuit part and the high-frequency amplifier circuit part in the multilayer substrate. Since the through-hole electrodes are arranged, the magnetic field lines from the main and sub lines of the coupler are prevented from propagating to the peripheral circuit, and at the same time, unnecessary noise from the peripheral circuit is also prevented. And stabilization of the coupling characteristics can be realized at the same time. Further, mutual interference between the antenna switch circuit and the high frequency amplifier circuit is also prevented.

The high-frequency module of the present invention is provided with two high-frequency amplifier circuits and two coupler circuits, and the two coupler circuits are arranged in separate horizontal regions of the dielectric layer, and Each main line or sub-line is preferably arranged substantially symmetrically with respect to the center line of the dielectric layer.
First, by providing separate horizontal regions for different frequency bands, the main line and sub-line of different frequency bands do not overlap in the vertical direction of the laminated substrate (projected from the top of the substrate) and mutual interference occurs. Does not happen.
In addition, the main line or the sub line of the coupler arranged separately in the horizontal region of the dielectric layer for each different transmission system should be arranged substantially symmetrically with respect to the (horizontal) center line of the dielectric layer. As a result, the isolation between different transmission paths is improved, and as a result, the amount of harmonics generated from the antenna terminal of the module can be reduced. Further, the electrode arrangement in the dielectric substrate is symmetric with respect to the in-plane, and the electrode density inside the dielectric can be made uniform. Generally, in the process of manufacturing a co-fired ceramic substrate, the dielectric substrate shrinks at a certain ratio before and after the firing step. Since this ratio varies depending on the density of the ceramic material and the electrode material of the substrate, it is possible to accurately control the substrate size after firing by making the electrode density inside the dielectric uniform.

In the high frequency module of the present invention, the electrode pattern constituting the main line of the coupler circuit is formed on a dielectric layer different from the dielectric layer on which the electrode pattern for the transmission line of the low-pass filter circuit is formed. It is desirable.
In this way, since the transmission line of the low-pass filter is formed in a layer different from the main line through which the transmission signal passes, the interference of the transmission signal is suppressed and the isolation is improved, and the attenuation characteristic level of the low-pass filter is improved. As a result, the amount of harmonics generated from the antenna terminal of the module can be reduced.

In the high-frequency module of the present invention, it is desirable that the electrode pattern constituting the main line of the coupler circuit is disposed on the lower layer side than the electrode pattern constituting the sub line.
As described above, by positioning the main line in a lower layer of the laminated substrate than the sub line, the main line can be easily arranged close to the shield electrode (ground electrode). As a result, the leakage magnetic field from the main line is reduced, and the amount of harmonic generation can be further reduced. Also, one end of the sub line needs to be terminated by a 50Ω resistor, but by placing the sub line on the top of the laminated substrate, it is possible to minimize the routing to the 50Ω, and further miniaturization can be achieved. It becomes possible.

The high-frequency module according to the present invention includes: a sub-line of the coupler circuit; a transmission line of the low-pass filter circuit; and a transmission line that constitutes a matching circuit of an output stage of the high-frequency amplifier circuit. It is desirable to form on the side (upper layer side than 1/3 of the thickness).
The impedance of the transmission line constituting the transmission line of the low-pass filter and the matching circuit of the output stage of the high-frequency amplifier module section is desirably as large as possible, and the distance between the transmission line and the ground needs to be set as large as possible. For this reason, the sub-line of the coupler, the transmission line of the low-pass filter, and the transmission line constituting the matching circuit of the output stage of the high-frequency amplifier module section are arranged on the upper side with respect to the thickness direction of the dielectric board. It is formed on the upper layer side from 1/3. This makes it possible to improve the passage loss characteristics and attenuation characteristics of the module.

In the laminated substrate used in the high-frequency module of the present invention, the coiled electrode pattern constituting the sub-line of the coupler and the coiled electrode pattern constituting at least the transmission line of the low-pass filter are divided into two or more different dielectrics. Two or more different dielectrics comprising an upper layer mainly composed of an electrode pattern of a transmission line formed over the layers, a coiled electrode pattern constituting the main line of the coupler, and an electrode pattern constituting at least the capacitance of the low-pass filter Mainly a middle layer mainly composed of capacitive electrodes provided over the layers, and a transmission line mainly comprising two or more different dielectric layers with coiled electrode patterns constituting the transmission lines of the branching circuit and the switch circuit. Consists of a lower layer, and each of these upper layer, middle layer, and lower layer is a seal that leads to ground Providing an electrode can be configured.
As described above, the electrode patterns are collectively formed in the vertical region of the multilayer substrate and are separated by the ground electrode, so that interference between the upper and lower elements is suppressed.
In the high-frequency module of the present invention, a 50Ω termination can be connected to one end of the coupler sub-line, and the other end can be connected to an external electrode as a coupling port. This provides a high frequency module having a plurality of independent coupling ports corresponding to different transmission systems.
Further, in the high frequency module of the present invention, a plurality of sub-lines corresponding to different transmission systems can be connected in series in the laminated substrate, one end can be terminated at 50Ω, and the other end can be connected to an external electrode as a coupling port. it can. Thereby, the high frequency module provided with the single coupling port corresponding to a different transmission system can be provided.

According to the present invention, an antenna switch circuit, a low-pass filter circuit, a coupler circuit, and a high-frequency amplifier circuit are integrated into a laminated substrate in a high-frequency module, and mainly by reviewing the arrangement configuration of the electrode pattern of the coupler circuit, A small high-frequency module can be obtained. This coupler circuit can be optimized by independently changing the lengths of the main line and the sub-line, and the coupling amount can be easily set. In addition, it is possible to apply the phase control by increasing only the main line length. Also, by forming the main line on a layer different from the transmission line of the low-pass filter, the isolation between the low-pass filter and the coupler can be improved, and the high-frequency module with improved attenuation characteristics of the low-pass filter can be obtained. Can do. Further, since the coupler is constituted by a coil type directional coupler, the coupling length can be easily set, the size can be reduced, and the loss can be reduced.
According to the present invention, a communication device having a small size and light weight and high power added efficiency can be obtained by mounting the above-described high-frequency module.

Hereinafter, an embodiment of a high-frequency module of the present invention will be described with reference to the drawings, taking a mobile phone system as an example.
First, in general, in a mobile phone system, in order to avoid interference with surrounding mobile phones, a control signal (power control signal) is set so that the outgoing output becomes the minimum power necessary for communication from the base station to the mobile phone. Has been sent. With an APC (Automatic Power Control) circuit that operates based on this control signal, the gate voltage is controlled so that the transmission output of the high-frequency amplifier at the transmission-side output stage is an output required for a call. This is controlled by comparing the detection signal obtained by actually monitoring the power output from the high-frequency amplifier with a coupler and the power control signal from the base station. In this way, mobile phone communication systems are constructed to make it difficult for interference to occur with other mobile phones and to maintain stable call quality by making a call with variable output so as to adapt to the surrounding environment. Has been.
In European digital cellular phone systems, there are two main types of output detection circuits for high-frequency amplifiers. One is to attach a coupler circuit to the output terminal of the high-frequency amplifier and detect the output power, and the other is to attach a resistor of about 1 to 10Ω to the high-frequency amplifier section and obtain the power consumption from the voltage drop. There are two ways to convert to In general, the former is realized by forming a circuit in a laminate, and the latter has various types of derivation means. For example, it is realized by circuit integration on a mounted component or a semiconductor chip. The present invention is a case where output power is monitored by a coupler in the former method.

The embodiment is a range indicated by a solid line in FIG. 6, that is, an EGSM, DCS, PCS triple-band system, a demultiplexing circuit (Dip), a switch circuit (SW1, SW2), a low-pass filter circuit (LPF1, LPF2), and a coupler. This is a multiband high-frequency module in which a circuit (Coupler1, Coupler2) and a high-frequency amplifier circuit (HPA1, HPA2) are configured on one laminated substrate. FIG. 1 shows an example of an equivalent circuit of the antenna switch module unit. FIG. 2 shows an example of an equivalent circuit of the high-frequency amplifier module unit. FIG. 3 is a development view of the dielectric sheet constituting the laminated substrate. FIG. 4 is a schematic cross-sectional view of the main part of the multilayer substrate.

In FIG. 1, a duplexer (hereinafter referred to as a diplexer) Dip includes transmission lines Lf1 to Lf3 and capacitors Cf1 to Cf4. The transmission line Lf2 and the capacitor Cf1 form a series resonance circuit, and in the DCS band (transmission frequency: 1710 to 1785 MHz, reception frequency: 1805 to 1880 MHz) and PCS band (transmission frequency: 1850 to 1910 MHz, reception frequency: 1930 to 1990 MHz) Design to have a resonant frequency. In this example, the attenuation pole is set to 1.8 GHz. The transmission line Lf3 and the capacitor Cf3 form a series resonance circuit and are designed to have a resonance frequency in the EGSM band (transmission frequency: 880 to 915 MHz, reception frequency: 925 to 960 MHz). In this example, the attenuation pole is set to 0.9 GHz. This circuit makes it possible to demultiplex and synthesize an EGSM signal and a DCS / PCS signal. The transmission line Lf1 is preferably set to a certain length so as to have a high impedance for the frequency of the DCS / PCS signal. This makes it difficult to transmit DCS / PCS signals to EGSM routes. On the other hand, the capacitors Cf2 and Cf4 are preferably set to relatively small capacitance values so as to have a high impedance with respect to the frequency of the EGSM signal. This makes it difficult for EGSM signals to be transmitted to the DCS / PCS route.
In addition, an inductor Lf having one end grounded is inserted between the antenna ANT and the diplexer Dip to prevent electrostatic breakdown. This is because when a charge charged on a human body or the like is applied from an antenna terminal, a PIN surge or a GaAs semiconductor may be destroyed by a voltage surge, and the inductor Lf functions to release this voltage surge to GND.

The first switch circuit SW1 includes capacitors Cf and Cg4, transmission lines Lg2 and Lg3, PIN diodes Dg1 and Dg2, and a resistor Rg. The lengths of the transmission lines are set so that the transmission lines Lg2 and Lg3 are λ / 4 resonators in the EGSM transmission frequency band. However, the transmission line Lg2 can be replaced with a choke coil whose ground level appears to be open (high impedance state) at the EGSM transmission frequency. The resistor Rg determines the current flowing through the first and second diodes Dg1 and Dg2 when the control power supply VC1 is in the high state. Capacitances Cf and Cg4 are necessary for DC cut of the control power supply. When the control power source VC1 is high, the PIN diode Dg2 has a parasitic inductance such as a connection wire, and therefore, series resonance is caused with the capacitor Cg4 so as to cancel this.

As described above, when the control power supply VC1 is high, both the first and second diodes Dg1 and Dg2 are turned on, the connection point between the second diode Dg2 and the transmission line Lg3 becomes the ground level, and the transmission is a λ / 4 resonator. The impedance on the opposite side of the line Lg3 becomes infinite. Therefore, when the control power source VC1 is High, a signal cannot pass through the path between the diplexers Dip and EGSM Rx, and the signal easily passes through the path between the diplexers Dip and EGSM Tx. On the other hand, when the control power supply VC1 is low, the first diode Dg1 is also turned off, and no signal can pass through the path between the diplexer Dip and EGSM Tx, and the second diode Dg2 is also turned off, so between the diplexer Dip and EGSM Rx. It is easier for signals to pass through this route. With the above configuration, transmission / reception of EGSM signals can be switched.

The second switch circuit SW2 includes capacitors Cp, Cd4, Cp2, Cp4, transmission lines Ld2, Ld3, Lp2, Lp3, PIN diodes Dd1, Dd2, Dp1, Dp2, and resistors Rd, Rp. Transmission line Ld2, Ld3, Lp2, Lp3 sets the length of the transmission line so as to be a λ / 4 resonator at the frequency of the DCS / PCS signal. However, the transmission line Ld2 can be replaced with a DCS transmission frequency, and Lp2 can be replaced with a choke coil whose ground level appears to be open (high impedance state) at the PCS transmission frequency. The resistor Rd determines the current flowing through the third and fourth diodes Dd1 and Dd2 when the control power supply VC2 is in the high state. The resistor Rp determines the current flowing through the fifth and sixth diodes Dp1, Dp2 when the control power supply VC3 is in the high state. Capacitances Cd4, Cp, and Cp4 are necessary for DC cut of the control power supply. When the control power supply VC2 is high, the PIN diode Dd2 has a parasitic inductance such as a connection wire, so the capacitance value of the capacitor Cd4 is set so as to resonate in series with the capacitor Cd4.

As described above, when the control power source VC2 is High, the third and fourth diodes Dd1 and Dd2 are both turned on, the connection point between the fourth diode Dd2 and the transmission line Ld3 is at the ground level, and the transmission is a λ / 4 resonator. The impedance on the opposite side of the line Ld3 becomes infinite. Therefore, when the control power source VC2 is High, signals cannot pass through the path between the diplexers Dip to PCS Rx and the diplexers Dip to DCS Rx, and signals easily pass through the path between the diplexers Dip to DCS / PCS Tx. On the other hand, when the control terminal VC2 is Low, the third diode Dd1 is also turned OFF, and the signal cannot pass through the path between the diplexer Dip and DCS / PCS Tx, and the fourth diode Dd2 is also OFF, so the diplexer Dip to PCS Rx. The signal easily passes through the path between the diplexer Dip and the DCS Rx.

Further, when the control terminal VC3 is High, since there is a parasitic inductance such as a connection wire in the PIN diode Dp2, the capacitance value of the capacitor Cp4 is set so as to resonate in series with the capacitor Cp4. As a result, when the control terminal VC3 is High, both the fifth and sixth diodes Dp1 and Dp2 are turned on, the connection point between the sixth diode Dp2 and the transmission line Lp3 becomes the ground level, and the transmission is a λ / 4 resonator. The impedance on the opposite side of the line Lp3 becomes infinite. Therefore, when the control terminal VC3 is High, the signal cannot pass through the path between the DCS Rx, and the signal easily passes through the path between the PCS Rx. Conversely, when the control terminal VC3 is Low, the fifth diode Dp1 is also turned OFF, and no signal can pass through the path between the PCS Rx, and the sixth diode Dp2 is also OFF, so the signal is passed through the path between the DCS Rx. Easy to pass. With the above configuration, switching to DCS / PCS Tx when the control terminal VC2 is High, switching to PCS Rx when the control terminals VC2 and VC3 are Low and High respectively, and switching to DCS Rx when the control terminal VC2 and the control terminal VC3 are Low Is possible.

The control logic of Table 1 is also different from the control logic of the antenna switch module described above. In this case, VC3 was set to High in EGSM TX mode and DCS / PCS TX mode. This is for the purpose of reducing the amount of harmonics generated from the fifth and sixth diodes Dp1, Dp2. By setting VC3 to High in the transmission mode, Dp1 and Dp2 are turned on, and the amount of harmonics generated can be reduced.

Next, the first low-pass filter LPF1 is a π-type low-pass filter composed of a transmission line Lg1 and capacitors Cg1, Cg2, and Cg3. Here, the transmission line Lg1 and the capacitor Cg1 form a parallel resonance circuit, and the resonance frequency is set to be twice or three times the transmission frequency of EGSM. In this embodiment, the frequency is set to 3 times 2.7 GHz. With the above configuration, harmonic distortion included in the transmission signal on the EGSM side input from the power amplifier can be removed.

The second low-pass filter LPF2 is a π-type low-pass filter composed of a transmission line Ld1 and capacitors Cd1, Cd2, and Cd3. Here, the transmission line Ld1 and the capacitor Cd1 constitute a parallel resonance circuit, and the resonance frequency is set to be twice or three times the DCS / PCS transmission frequency. In this embodiment, the frequency is set to 3.6 GHz which is doubled. With the above configuration, harmonic distortion included in the DCS / PCS side transmission signal input from the power amplifier can be removed.

The first coupler circuit Coupler1 includes a main line Lcg1, a sub line Lcg2, and a termination resistor Rcg. Here, one end of the transmission line constituting the main line Lcg1 is connected to the transmission line Lg1 of the first low-pass filter LPF1, and the other end is connected to the terminal port of the high-frequency amplifier HPA1. The transmission line constituting the sub line Lcg2 is arranged so as to couple with the main line Lcg1, and one end thereof is grounded via a termination resistor Rcg substantially equal to the characteristic impedance (50Ω). The other end is connected to the monitor terminal CP1. Therefore, a part of the transmission signal of EGSM is taken out, the power of the transmission signal coming from the transmission circuit is detected, and the detection signal is sent to the APC circuit via the detector for feedback control. The electrical length of the main line is ideally required to be about λ / 4 of the EGSM transmission frequency, but the main line and the sub-line are formed in a coil shape as in this embodiment, and the width of the sub-line is larger than that of the main line. When the length is increased, a sufficient coupling amount and isolation can be secured even if the length of the main line is about λ / 8. In the present invention, since the length of the main line can be shortened, the module size can be reduced and the loss can be reduced.

The second coupler circuit Coupler2 includes a main line Lcd1, a sub line Lcd2, and a termination resistor Rcd. Here, one end of the transmission line constituting the main line Lcd1 is connected to the transmission line Ld1 of the second low-pass filter LPF2, and the other end is connected to the terminal port of the high-frequency amplifier HPA2. The transmission line constituting the sub line Lcd2 is arranged so as to be coupled to the main line Lcd1, and one end thereof is grounded via a termination resistor Rcd substantially equal to the characteristic impedance (50Ω). The other end is connected to the monitor terminal CP2. Therefore, a part of the DCS / PCS transmission signal is extracted, the power of the transmission signal coming from the transmission circuit is detected, and the detection signal is sent to the APC circuit via the detector for feedback control. The electrical length of the main line is ideally required to be about λ / 4 of the DCS / CPS transmission frequency, but the main line and the sub line are formed in a coil shape as in this embodiment, and the width of the sub line is the main. When it is made larger than the track, a sufficient amount of coupling and isolation can be secured even if the length of the main track is about λ / 8. In the present invention, since the length of the main line can be shortened, the module size can be reduced and the loss can be reduced.

Next, the high frequency amplifier side will be described. FIG. 2 shows a circuit diagram of the high-frequency amplifier of this embodiment. The output terminal EGSM Po at the matching circuit end on the high frequency amplifier side is connected to the transmission terminal EGSM Tx in FIG. 1 and plays the role of sending the amplified transmission signal to the antenna switch side. One end of a transmission line lm1 is connected to the output terminal EGSM P0 via a DC cut capacitor ca4. Capacitors ca13, ca14, and ca15 having one end grounded are connected to the transmission line lm1 to constitute an output matching circuit. The other end of the transmission line lm1 is connected to the collector of the bipolar transistor GQ3.

The connection point between the other end of the transmission line lm1 and the collector of GQ3 is grounded through a series circuit of an inductor lm2 and a capacitor ca10 made of a λ / 4 strip line or the like, and the connection point between the inductor lm2 and the capacitor ca10 is a drive power source. Connected to Vcc2. The gate of GQ3 and the collector of GQ2 are connected via a capacitor Ca3, and a bias voltage Vb3 is supplied from the power amplifier control circuit to the base side of CQ2.

The collector connection point of the capacitors ca3 and GQ2 is grounded through a series circuit of an inductor lm3 and a capacitor ca9 made of a λ / 4 strip line or the like, and the connection point of the inductor lm3 and the capacitor ca9 is connected to the drive power source Vcc1. ing. The gate of GQ2 and the collector of GQ1 are connected via a capacitor Ca2. Further, a bias voltage Vb2 is supplied from the power amplifier control circuit to the base side of CQ2.

The collector connection point of the capacitors ca2 and GQ1 is grounded via a series circuit of an inductor lm4 and a capacitor ca9 made of a λ / 4 strip line or the like, and the connection point of the inductor lm4 and the capacitor c9 is connected to the drive power source Vcc1. ing. The gate of GQ1 and the input terminal Gin are connected via a capacitor Ca1, and further, a bias voltage Vb1 is supplied from the power amplifier control circuit to the base side of CQ1.

Similarly, the output terminal DCS / PCS Po at the matching circuit end is connected to the transmission terminal DCS / PCS Tx in FIG. 1 and plays a role of transmitting the amplified transmission signal to the antenna switch side. One end of a transmission line lm5 is connected to the output terminal DCS / PCS P0 via a DC cut capacitor ca8. Capacitors ca16, ca17, ca18 having one end grounded are connected to the transmission line lm5 to constitute an output matching circuit. The other end of the transmission line lm5 is connected to the collector of the bipolar transistor DQ3.

The connection point between the other end of the transmission line lm5 and the collector of DQ3 is grounded via a series circuit of an inductor lm6 and a capacitor ca12 made of a λ / 4 strip line, etc., and the connection point between the inductor lm6 and the capacitor ca12 is a driving power source. Connected to Vcc4. The gate of DQ3 and the collector of DQ2 are connected via a capacitor Ca7, and a bias voltage Vb6 is supplied from the power amplifier control circuit to the base side of DQ2.

The collector connection point of the capacitors ca7 and DQ2 is grounded via a series circuit of an inductor lm7 and a capacitor ca11 made of a λ / 4 strip line, and the connection point of the inductor lm7 and the capacitor ca11 is connected to the drive power source Vcc3. ing. The gate of DQ2 and the collector of DQ1 are connected via a capacitor Ca6, and a bias voltage Vb5 is supplied from the power amplifier control circuit to the base side of DQ2.

The collector connection point of the capacitors ca6 and DQ1 is grounded through a series circuit of an inductor lm8 and a capacitor ca11 made of a λ / 4 strip line or the like, and the connection point of the inductor lm8 and the capacitor ca11 is connected to the drive power supply Vcc3. ing. Further, the gate of DQ1 and the input terminal Din are connected via a capacitor Ca5, and a bias voltage Vb4 is supplied from the power amplifier control circuit to the base side of DQ1.

The power amplifier control circuit adjusts the bias voltages Vb1 to Vb6 according to the band select voltage Vbs and the APC control voltage Vapc. As a result, it is possible to amplify the input signals Gin and Din and to input the signal impedance-converted to 50Ω by the matching circuit to the antenna switch circuit side.

In the equivalent circuits of FIGS. 1 and 2, the transmission line and the inductor are often formed of a strip line, but may be formed of a microstrip line, a coplanar guideline, or the like. In the present embodiment, the amplifier circuit side uses three stages of amplifier circuits GQ1 to CQ3 and DQ1 to DQ3. However, the number of stages can be changed according to circumstances. Although GQ1-3 and DQ1-3 are examples of bipolar transistors, other types of transistors may be used. For example, Si-MOSFET, GaAsFET, Si bipolar transistor, GaAsHBT (heterojunction bipolar transistor), HEMT (high electron mobility transistor) and the like can be mentioned. Of course, an MMIC (monolithic microwave integrated circuit) in which several transistors are integrated may be used.

Further, in the above-described embodiment, the EGSM system can be further divided into GSM850 (transmission frequency: 824 to 849 MHz, reception frequency: 869 to 894 MHz) and EGSM so as to be compatible with the quad band. In this case, the transmission system can use a common terminal, and the reception system can be configured by connecting a switch for switching between GSM850 and EGSM to the EGSM reception terminal section of the triple-band antenna switch. Further, it can be realized by using a transmission line which is a λ / 4 resonator in the GSM850 or EGSM band instead of the switch and dividing the frequency between the two.

Next, the structure of the laminated substrate will be described. FIG. 3 shows a development view of a dielectric layer (hereinafter referred to as a green sheet). FIG. 4 is a schematic cross-sectional view for explaining the main part of the present invention of the laminated substrate. Now, in this embodiment, the transmission line of the demultiplexing circuit (Dip), the switch circuit (SW1, SW2) and a part of the capacitance, the low-pass filter circuit (LPF1, LPF2), the transmission line of the coupler circuit (Coupler1, Coupler2), The transmission lines and some capacitances of the high-frequency amplifier circuits (HPA1, HPA2) are configured by electrode patterns on the dielectric layer. In FIG. 1, chip elements such as diodes, high-capacity chip capacitors, chip inductors, and semiconductor elements are stacked. A high-frequency module mounted on a substrate and thus made into one chip is configured.

The green sheet constituting the laminated substrate is made of an LTCC material that can be co-fired at a low temperature of 950 ° C. or lower. For example, 10 to 60% by mass in terms of Al2O3, 25 to 60% by mass in terms of SiO2, 7.5 to 50% by mass in terms of SrO, 20% by mass or less in terms of TiO2 and Al, Si, Sr, Ti and Bi2O3 0.1 to 10% by mass, 0.1 to 5% by mass in terms of Na2O, 0.1 to 5% by mass in terms of K2O, 0.01 to 5% by mass in terms of CuO, and 0.01 to 5 in terms of MnO2. Dielectric compositions containing mass% Bi, Na, K, Cu, and Mn are used.

The laminated substrate is printed on a green sheet with a sheet thickness of 40 to 200 μm by printing a silver-based conductive paste with a predetermined electrode pattern that constitutes a transmission line and a capacitor capacity, and a through hole is appropriately provided to form a circuit. The sheets are integrated by sequentially laminating and pressure bonding and firing at 950 ° C. The size is about 8 mm wide x 8 mm long x 1.5 mm high. A diode, transistor, chip inductor, and chip capacitor are mounted on the top surface, and a metal case is placed on top of it to complete the product. However, a resin sealed package may be used instead of the metal case.

The multilayer substrate constitutes a high-frequency amplifier module part in the left region and a switch module part in the right region. Note that the electrode pattern of the left-side high-frequency amplifier module section is omitted, and the switch module section will be described below.
First, between the left and right regions of the multilayer substrate, a shield electrode SG is provided that communicates with the ground on the back of the lowermost layer via a through-hole electrode. It is desirable to provide shield electrodes on all the green sheets when there is a margin in terms of dimensions, but in many cases this is not possible, so as shown in green sheets 3, 9 etc., strip-shaped shield electrodes SG2, SG6 In addition, the shield electrode can be made to act as a so-called bowl-like shape by intermittently cascading like the through-hole electrodes HG1 to HG4 connected to the ground electrode on the back surface. By providing such shield electrodes SG and HG, the layout design of each electrode pattern is simplified, and mutual interference between high-frequency components can be suppressed. Unstable operation such as oscillation of the high frequency amplifier can be prevented. In addition, it is possible to suppress the occurrence of spurious signals between the necessary signal (transmission signal) and the unnecessary signal, and to prevent the passage characteristics from deteriorating.

Now, the laminated substrate of the embodiment is composed of 10 layers, and the upper layer (1-3 layers) is mainly provided with electrode patterns of transmission lines that respectively constitute one of the diplexers and the sub-lines of the low-pass filter and coupler, and the middle layer. The transmission line and diplexer that constitute the main line of the coupler (4 to 8 layers), the switch pattern and the electrode pattern that constitutes the capacitor capacity of the low-pass filter are mainly provided, and the other diplexer and switch are arranged in the lower layer (9 to 10 layers). The electrode pattern of the transmission line which comprises a circuit is mainly formed. In the following description, the layered pattern of the part related to the present invention is mainly described, and the detailed description of the other layered pattern is omitted.

The uppermost green sheet 1 is formed with a shield electrode SG1, land electrodes for connecting chip elements to be mounted, and transmission lines lm1 and lm5 for a power amplifier matching circuit.
The green sheet 2 includes a shield electrode HG1 in which through-hole electrodes are arranged in cascade, a sub-line Lcg2 of the coupler 1 and a sub-line Lcd2 of the coupler 2, transmission lines lm1 and lm5 of the matching circuit of the power amplifier, and a low-pass filter LPF1. Coiled electrode patterns constituting the transmission line Lg1 and the transmission line Ld1 of the low-pass filter LPF2 are also provided in the same layer. At this time, the coupler sub-lines Lcg2 and Lcd2 are arranged between the transmission lines lm1 and lm5 of the matching circuit of the power amplifier and the transmission lines Lg1 and Ld1 of the low-pass filter, and the sub-line Lcg2 of the coupler 1 and the sub-line of the coupler 2 A coiled electrode pattern is provided in a region different from Lcd2 and substantially in the target position and shape with respect to the center line CL in the horizontal direction of the sheet.

The green sheet 3 is formed with a band-shaped shield electrode SG2, and the coiled electrode pattern following the sub-lines Lcg2 and Lcd2, the coiled electrode pattern following the low-pass filters Lg1 and Ld1, and the transmission of the power amplifier matching circuit Lines lm1 and lm5 are provided. However, the line widths of the sub-lines Lcg2 and Lcd2 in this layer are set to be larger than the line width of the main line described below, so as to reduce variations in the coupling amount due to impedance matching and displacement between sheets. Further, a transmission line Lg3 of the switch circuit SW1 is provided. The transmission lines Lf1 and Lf2 constituting the low-pass filter of the diplexer Dip are also formed on the green sheets 1 to 3.

In the green sheets 4, 6, and 8, the shield electrodes SG3, SG4, and SG5 are arranged at 2/5 to 3/5 of the thickness of the dielectric substrate, and the areas from the green sheets 1 to 5 and the green sheets 6 to the back surface are arranged. The region can be shielded electromagnetically. As a result, the pattern arrangement can be laid out without worrying about the upper and lower isolations of the shield electrodes SG3, SG4, and SG5, so that the module size can be reduced.

On the green sheet 5, the ground capacitors CG2 and Cd2 of the low-pass filter section, the ground capacitors ca13 to 18 of the matching circuit, and the like are formed. Then, to form a coil-shaped electrode pattern constituting the main line Lcd 1 of the main line Lcg1 the coupler 2 of the coupler 1 over this layer in the green sheet 6.

The green sheets 6, the main continues from the upper layer in addition to the shield electrode SG4 line Lcg1, Lcd 1 and the counter electrode CG2 are mainly provided. This main line Lcg1, Lcd 1 layer is not a clear coiled, it can be said that the overall form a coil coupler circuit. As described above, the coiled electrode patterns constituting the main lines Lcg1 and Lcd1 are arranged close to the counter electrodes CG1 and CG2 leading to the ground, so that parasitic capacitance is easily generated, and as a result, the capacitances Cg3 and Cd3 The electrode can be made small.

On the green sheet 7, an electrode pattern that forms the remaining capacitance of the switch circuit, the low-pass filter circuit, and the diplexer circuit is formed.
On the green sheet 8, the shield electrode SG5 is formed as described above.
Then, all of the sub-lines Lcg2 and Lcd2 and the main lines Lcg1 and Lcd1 of the coupler provided in each green sheet are arranged in a state of being sandwiched between the shield electrodes SG1 and SG5 when viewed from above.

The green sheets 9 and 10 are provided with the transmission line on the high-pass filter side of the diplexer, the electrode pattern of the transmission line constituting the switch circuit, the shield electrode SG6, and the cascaded through-hole electrode HG4.
A ground electrode GND is formed almost at the center of the back surface of the green sheet 10, and an ANT terminal, receiving terminals GRx, DRx, PRx terminals, power amplifier input terminals Gin, Din, antenna switch control terminals VC1, VC2, VC3, coupler output terminals CP1, CP2, band select terminal BS, APC control terminal, power amplifier power supply terminals VCC1, VCC2, VCC3, VCC4 and GND terminals are arranged.

FIG. 4 shows DCS / PCS side coupler sub-line lcd2, main line lcd1, low-pass filter transmission line ld1, capacitors cd2, cd3, power amplifier matching circuit transmission line lm5, capacitors ca16, ca17, ca18, and shield electrodes. It is sectional drawing which shows arrangement | positioning structures, such as. In this way, the coupler sub-line lcd2, the low-pass filter transmission line ld1, and the matching circuit transmission line lm5 are formed in the same upper layer. The main line lcd1 of the coupler is formed as a coil in the lower layer of the sub line lcd2, and is shielded by the through-hole electrodes HG1, HG2, HG3 and the shield electrodes SG3, SG4, SG5. This greatly improves the isolation between the transmission line lm5 of the matching circuit and the main line lcd1, and the isolation between the main line lcd1 and the transmission line ld1 of the low-pass filter. The matching circuit and the low-pass filter are separated by the shield electrodes SG1 and SG3 that include the main and sub lines of the coupler, and at the same time, the electromagnetic shielding effect by the ground electrode is combined. Therefore, the isolation between functional blocks is also improved. It should be noted that the vertical relationship between the main line lcd1 and the sub line lcd2 of the coupler may be reversed, and in this case, it is the same as in the present invention.

The characteristics of the high-frequency module of the present invention are as follows. Conventionally, at GSM transmission, the efficiency was 42%, the second harmonic -35 dBm, and the third harmonic -40 dBm, but according to this embodiment, the efficiency is 45%, the second harmonic -50 dBm or less, and the triple. Improvement of characteristics was observed with harmonics below -55 dBm. On the other hand, for the DCS / PCS band, the efficiency was about 33%, the second harmonic -35 dBm, and the third harmonic -35 dBm, but according to this example, the efficiency was 35% or more, the second harmonic -45 dBm or less, A third harmonic of -50 dBm or less was achieved. Due to the above improvement in characteristics, when this high-frequency module is used in a mobile phone, the efficiency can be improved by about 5 to 10% compared to the case where components are separately mounted as in the conventional case. As a result, power consumption during transmission is reduced, battery life is improved, and a long-term call of about 5 to 10% is possible as a call time per charge.
Therefore, it is possible to meet the needs for miniaturization and weight reduction by installing in communication devices such as small information terminals such as mobile phones and PDAs.

The equivalent circuit of the antenna switch shown in FIG. 1 and the equivalent circuit of the high-frequency amplifier shown in FIG. 2 are examples. For example, although an example in which a PIN diode is used as the switch circuit is shown, the switch circuit can also be configured by using an SPnT type GaAs switch such as SPDT (Single Pole Dual Throw) or SP3T. In this case, if the PIN diode switch is simply replaced with an SPDT GaAs switch, the λ / 4 line required for the PIN diode switch is not necessary, so that there is enough room in the stack. For this reason, it is advantageous for further miniaturization and higher integration by reducing this space or forming a new functional element. Further, a SAW filter may be inserted into the reception system path and integrated.

In the above-described embodiment, the circuit has the output terminals CP1 and CP2 for each transmission band as the coupling port. However, as shown in FIG. 5, one end of the sub line lcc2 is replaced with one end of another sub line lcd2. A circuit connected to can also be used. According to this circuit, it is possible to monitor the output power of both EGSM and DCS / PCS bands with a common coupling port, and it is possible to reduce the number of parts of the detector connected in the subsequent stage.

In addition to the transmission / reception system used in the present invention, PDC800 band (810 to 960 MHz), GPS band (1575.42 MHz), PHS band (1895 to 1920 MHz), Bluetooth band (2400 to 2484 MHz), Wireless LAN 2. The same effect can be expected in the case of an antenna switch circuit that supports 5G band, 5G band, CDMA2000, which is expected to be popular in the US, and TD-SCDMA, which is expected to be popular in China. A multi-mode multi-band antenna switch circuit such as a dual-band, 3-band, 4-band, and 5-band can be obtained by using the circuit in these cases.

  The high-frequency module of the present invention can be used for communication devices such as information terminals such as mobile phones and PDAs.

It is an equivalent circuit diagram on the antenna switch module side showing an embodiment of the high-frequency module of the present invention. It is an equivalent circuit diagram on the high frequency amplifier side showing an embodiment of the high frequency module of the present invention. It is a green sheet expansion | deployment figure of the multilayer substrate which shows one Example of the high frequency module of this invention. It is typical sectional drawing of the principal part of a laminated substrate. It is an equivalent circuit diagram on the antenna switch module side showing an embodiment of the high-frequency module of the present invention. It is a block diagram explaining the form of the high frequency module of this invention.

Explanation of symbols

ASM: Antenna switch module
HPA: High power amplifier
Dip: Diplexer (demultiplexer, demultiplexer circuit)
SW: Switch circuit
LPF: Low-pass filter circuit
Coupler: Coupler circuit
SAW: SAW filter
lf1-lf3, lg1-lg3, ld1-ld3, lp1-lp3, lm1-lm8, Lf, Ld: inductor, transmission line
cf1 to cf4, cg1 to cg4, cd1 to cd4, cp1 to cp4, ca1 to ca18, Cd, Cp: capacitors
GQ1 to GQ3, DQ1 to DQ3: Transistors
Dg1, Dg2, Dd1, Dd2, Dp1, Dp2: PIN diode
SG, SG1 to SG7: Ground electrode
HG, HG1 to HG4: Ground electrode by through hole

Claims (9)

An antenna switch circuit, a low-pass filter circuit, a coupler circuit, and a high-frequency amplifier circuit are formed by using a circuit element constituted by an electrode pattern in a laminated substrate formed by laminating a plurality of dielectric layers and a circuit element mounted on the laminated substrate. In the integrated high-frequency module, the coupler circuit has a function of monitoring the output of the high-frequency amplifier circuit, and is disposed between the switch circuit and the high-frequency amplifier circuit, and the coupler circuit is connected to the main line. The main line and the sub line are configured by electrode patterns in the laminated substrate, and the electrode pattern for the main line and the electrode pattern for the sub line are formed on different dielectric layers in the laminate. provided, when and the the electrode pattern for the main line and the electrode pattern for the sub-line are arranged separately in the vertical direction of the stacking direction Moni,
Two high-frequency amplifier circuits and two coupler circuits are provided, and the two coupler circuits are arranged in different regions in the horizontal direction of the dielectric layer for each different transmission system. The high frequency module , wherein the electrode patterns constituting the main line and the sub line of one coupler circuit are arranged so as to be sandwiched between two identical shield electrodes that lead to the ground . The electrode pattern constituting the transmission line of the low-pass filter and the electrode pattern constituting the sub line are arranged on the same one side in the stacking direction with respect to the dielectric layer provided with the electrode pattern constituting the main line. high-frequency module according to claim 1, wherein the are. 3. The high frequency device according to claim 1 , wherein a part of the coupler is disposed in a dielectric layer in which a shield electrode leading to a ground is formed for isolation in a vertical direction of the multilayer substrate. module. 4. The high-frequency module according to claim 1, wherein each of the main line and the sub line is disposed substantially symmetrically with respect to a center line of the dielectric layer . A sub-line of the coupler circuit is formed in a coil shape over two or more different dielectric layers, and two or more different main lines of the coupler circuit are formed above or below a plurality of dielectric layers constituting the sub-line. The high frequency module according to claim 1, wherein the high frequency module is formed over a dielectric layer . The line width of one of the main line and the sub line of the coupler circuit formed in at least one dielectric layer is different from the width of the other line formed in the other dielectric layer, The high frequency module according to any one of claims 1 to 5. Between the electrode pattern constituting the main line and the sub line of the coupler circuit and the switch circuit portion in the multilayer substrate, and the electrode pattern constituting the main line and the sub line of the coupler circuit and the high frequency in the multilayer substrate The high-frequency module according to claim 1, wherein a through-hole electrode leading to the ground is provided between the amplifier circuit portion . The high frequency module according to claim 1, wherein an electrode pattern constituting the main line of the coupler circuit is arranged on a lower layer side than an electrode pattern constituting the sub line. The sub-line of the coupler circuit, the transmission line of the low-pass filter circuit, and the transmission line constituting the matching circuit of the output stage of the high-frequency amplifier circuit are arranged on the upper layer side (1/3 of the thickness) with respect to the thickness direction of the multilayer substrate. The high-frequency module according to claim 1, wherein the high-frequency module is formed on an upper layer side.

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