JP4278729B2 - Substrate processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a single-wafer type substrate processing for processing a semiconductor substrate for manufacturing a semiconductor device, a glass substrate used for a liquid crystal display or the like (hereinafter collectively referred to as “substrate”) in a predetermined atmosphere at normal pressure. Relates to the device.
[0002]
[Background Art and Problems to be Solved by the Invention]
In the case where a substrate on which a precise pattern is formed is processed in a predetermined atmosphere, it is necessary to strictly adjust (or maintain high purity) the gas components in the processing chamber in which the processing is performed. For example, if the oxygen concentration is high in a silicide process in an RTP apparatus that processes a semiconductor substrate by applying a sharp temperature change, the metal thin film is oxidized and the contact resistance is increased. In addition, when the nitrogen concentration is high in the thermal oxidation treatment, the oxide film thickness distribution is deteriorated, and when the oxygen concentration is high during the annealing treatment in ammonia gas, the processing performance may be deteriorated.
[0003]
In order to prevent such deterioration in processing performance due to the strict adjustment of the atmosphere around the substrate, the gas inside the processing chamber is completely replaced with a specification that allows the processing chamber to be evacuated. It is also possible to adopt the technique of doing. However, if the substrate processing apparatus is adapted to vacuum, the manufacturing cost of the substrate processing apparatus itself becomes too high. In view of this, unless otherwise necessary, the processing chamber has a structure for atmospheric pressure processing, and measures have been taken by another method that can strictly adjust the atmosphere of the processing chamber.
[0004]
As a measure for strictly adjusting the atmosphere in the processing chamber, there is a method of preventing outside air from being caught together with the substrate when the substrate is loaded. In general, since a passage for carrying in and out the substrate is attached to the processing chamber, a method of surely replacing the gas remaining in the passage has been studied.
[0005]
Specifically, there is a substrate processing apparatus in which a supply port for a gas supplied into the processing chamber is provided at a position facing a mounting position of a passage. Thus, gas is ejected from the back of the processing chamber toward the passage to generate a gas flow from the processing chamber to the outside, thereby preventing outside air from being involved when the substrate is carried in and out.
[0006]
However, the structure in which the gas is ejected from the processing chamber toward the passage is excellent from the viewpoint of preventing the outside air from being involved when the substrate is carried in and out, but the gas is supplied from the side to the substrate during the processing. As a result, the in-plane uniformity of the substrate processing is reduced. That is, the conventional atmospheric pressure type substrate processing apparatus cannot satisfy all of the prevention of entrainment of the outside air, the replacement of the gas in the passage, and the maintenance of the in-plane uniformity of the substrate processing.
[0007]
Therefore, the present invention has been made in view of the above problems, and provides an atmospheric pressure type substrate processing apparatus capable of strictly adjusting the atmosphere of the processing chamber while considering the purpose of not impairing the in-plane uniformity of the substrate processing. The purpose is to do.
[0008]
[Means for Solving the Problems]
  The invention of claim 1 is a single-wafer type substrate processing apparatus for performing a predetermined process on a substrate at normal pressure, and includes a processing chamber in which the predetermined process is performed on the substrate, and an openable / closable inlet / outlet. A passage portion that is connected to the processing chamber and forms a space for the substrate from the carry-in / out entrance to the processing chamber, and processing means for performing the predetermined processing on the substrate in the processing chamberWhen,A gas supply passage for a passage portion connected to the passage portion as a gas supply passage into the passage portion;A gas exhaust passage for a passage portion connected to the passage portion as an exhaust passage for gas from the inside of the passage portion, and the processing chamber for supplying gas from one main surface side of the substrate disposed in the processing chamber. A gas supply passage for the processing chamber connected, a gas exhaust passage for the processing chamber connected to the processing chamber for exhausting gas from the other main surface of the substrate disposed in the processing chamber, and the processing chamber When the substrate is carried into and out of the substrate, gas is supplied from the gas supply passage for the processing chamber and the gas supply passage for the passage portion, and the gas is exhausted at a first flow rate from the gas exhaust passage for the passage portion, When replacing the gas in the processing chamber with the loading / unloading port closed, gas is supplied from the processing chamber gas supply passage and the passage portion gas supply passage, and from the passage portion gas exhaust passage. Gas at a second flow rate greater than the first flow rate When the predetermined processing is performed in the processing chamber, the gas is supplied from the processing chamber gas supply passage and the gas is exhausted from the processing chamber gas exhaust passage. A gas supply / exhaust control means for controlling the supply and exhaust of the gas so as to stop the supply of gas from the gas supply passage for the part,Is provided.
[0009]
  Invention of Claim 2 is the substrate processing apparatus of Claim 1, Comprising:The gas supply / exhaust control means exhausts gas at the first flow rate from the gas exhaust passage for the passage section when the predetermined processing is performed in the processing chamber.
A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the gas supply / exhaust control means moves the substrate into the processing chamber when the substrate is carried in / out of the processing chamber. The gas for the processing chamber is exhausted when the gas is exhausted at the third flow rate and the processing chamber is replaced with the gas in the state where the carry-in / out port is closed, and when the predetermined processing is performed in the processing chamber. Gas is exhausted from the exhaust path at a fourth flow rate greater than the third flow rate.
A fourth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects, wherein each of the processing chamber exhaust passage and the passage portion exhaust passage has a flow rate of gas flowing through the exhaust passage. A first flow valve that holds a predetermined value; and a second flow valve that holds a flow rate of the gas flowing through the exhaust passage at a value smaller than the predetermined value. The first flow rate valve and the second flow rate valve provided in each of the processing chamber exhaust passage and the passage portion exhaust passage are controlled to be opened and closed at predetermined timings, respectively.
[0010]
  Claim 5The invention ofAny one of claims 1 to 4The gas from the gas supply passage for the passage section is sprayed toward both main surfaces of the substrate to be transported in the passage section.
[0011]
  Claim 6The invention ofAny one of claims 1 to 5The flow path of the gas supply path for passage parts inclines toward the carry-in / out opening in the vicinity of the gas supply port in the passage part communicating with the gas supply path for passage parts.
[0012]
  Claim 7The invention ofAny one of claims 1 to 6The gas supply port communicating with the gas supply path for the passage section is unevenly distributed in the outer edge direction of the substrate to be transported.
[0013]
  Claim 8The present invention is a single-wafer type substrate processing apparatus that performs a predetermined process on a substrate at normal pressure, and includes a processing chamber in which the predetermined process is performed on the substrate, and an openable / closable loading / unloading port. A passage portion connected to a chamber and forming a space serving as a passage for the substrate from the carry-in / out entrance to the processing chamber;When,A gas exhaust passage for a passage portion connected to the passage portion as an exhaust passage for the gas from the inside of the passage portion;A gas supply path for the processing chamber connected to the processing chamber for supplying gas from one main surface side of the substrate disposed in the processing chamber, and another main surface of the substrate disposed in the processing chamber A gas exhaust path for a processing chamber connected to the processing chamber for exhausting gas from the side, and when the substrate is carried into and out of the processing chamber, and in the processing chamber in a state where the carry-in / out port is closed When the gas is replaced, the gas is supplied from the gas supply passage for the processing chamber, and the gas is exhausted from the passage portion gas exhaust passage at a first flow rate, and the predetermined processing is performed in the processing chamber. In addition, gas is supplied from the processing chamber gas supply passage and gas is exhausted from the processing chamber gas exhaust passage. On the other hand, the first flow rate is smaller than the first flow rate from the passage portion gas exhaust passage. Gas supply and evacuating the gas at a flow rate of 2 and A gas supply exhaust control means for controlling the mind,Is provided.
[0014]
A ninth aspect of the present invention is the substrate processing apparatus according to the eighth aspect, wherein the gas supply / exhaust control means is connected to the processing chamber gas exhaust path when the substrate is carried into and out of the processing chamber. The gas exhaust passage for the processing chamber when the gas is exhausted at a flow rate of 3 and the gas is replaced in the processing chamber with the carry-in / out port closed, and when the predetermined processing is performed in the processing chamber. The gas is exhausted at a fourth flow rate greater than the third flow rate.
[0015]
A tenth aspect of the present invention is the substrate processing apparatus according to the ninth aspect, wherein each of the processing chamber exhaust passage and the passage portion exhaust passage holds a flow rate of the gas flowing through the exhaust passage at a predetermined value. And a second flow valve for maintaining the flow rate of the gas flowing through the exhaust passage at a value smaller than the predetermined value, wherein the gas supply / exhaust control means is for the processing chamber. The first flow rate valve and the second flow rate valve provided in each of the exhaust passage and the passage portion exhaust passage are controlled to be opened and closed at a predetermined timing.
[0016]
  Claim 11The invention ofAny one of claims 1 to 102. The substrate processing apparatus according to claim 1, wherein the predetermined process is a process involving heating of the substrate.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a longitudinal sectional view showing an entire substrate processing apparatus 1 according to an embodiment of the present invention, and FIG. 2 is a transverse sectional view when viewed from the direction of reference AA shown in FIG. In FIG. 1, the configuration for supplying and exhausting gas is also shown as a block diagram.
[0018]
The substrate processing apparatus 1 is a single-wafer type apparatus that performs a process involving heating on the substrate 9 after setting the periphery of the substrate 9 to a predetermined atmosphere. A chamber 21 and a chamber 21 form a space in which the substrate 9 is processed. Are connected to the passage 21, which serves as a passage for the substrate 9 into and out of the chamber 21, the supply system 4 for supplying a predetermined gas into the chamber 21 and the passage 31, and the gas in the chamber 21 and the passage 31. An exhaust system 5 for exhausting is provided.
[0019]
The chamber 21 has a columnar shape centering on an axis facing the vertical direction (Z direction shown in FIG. 1), and a processing space 21s in which a predetermined gas is filled to process the substrate 9 is formed. It has become. A plurality of pins 22 for supporting the substrate 9 to be processed are provided below the processing space 21 s, and the substrate 9 carried into the chamber 21 is placed on these pins 22.
[0020]
An opening plate 23 in which a plurality of openings are formed is provided above the processing space 21 s, and gas supplied from the supply system 4 is evenly supplied from the openings of the opening plate 23 to the upper surface of the substrate 9. It is like that. Further, a heater 61 is provided above the opening plate 23, and the substrate 9 is heated and processed in a predetermined gas atmosphere by radiation from the heater 61. Specifically, RTP processing such as silicide processing, thermal oxidation processing, and annealing processing is performed on the substrate 9 that is a semiconductor. The inner wall of the chamber 21 is processed into a mirror surface so that the radiation from the heater 61 can be efficiently reflected.
[0021]
A passage space 31s extending in the horizontal direction (X direction) is formed inside the passage portion 31. One end of the passage space 31s communicates with the processing space 21s, and the other end is a carry-in / out port 31a through which the substrate 9 is taken in and out. It has become. That is, the substrate 9 carried into the chamber 21 is held in a horizontal posture by a transfer robot (not shown) outside the apparatus from the carry-in / out port 31a to the pin 22 in the processing space 21s via the passage space 31s. The substrate 9 transported in the horizontal direction (X direction) and transported out of the chamber 21 is transported out of the transport inlet / outlet 31a via the passage space 31s in a horizontal posture.
[0022]
The carry-in / out port 31a is provided with an insulating valve 32 for shutting off the processing space 21s and the passage space 31s from the outside air when the substrate 9 is processed, and when necessary, the processing space 21s and the passage space 31s It is opened and closed to release or seal the combined space. Further, the inner wall of the passage portion 31 is processed into a mirror surface (surface roughness of about 0.05 mm by arithmetic mean roughness) in the same manner as the inner wall of the chamber 21, thereby preventing gas from adhering to the inner wall of the passage portion 31. .
[0023]
The supply system 4 supplies a processing gas around the substrate 9 to be processed with heating, and supplies a gas from a gas supply source 81 outside the apparatus into the chamber 21 (processing space 21 s). There are provided a chamber supply pipe 41 serving as a flow path for the purpose and a passage section supply pipe 42 serving as a flow path for supplying a predetermined gas into the passage section 31 (passage space 31s). Further, in order to adjust the flow rate of the gas in each supply pipe, the chamber supply pipe 41 is provided with a chamber supply valve 411, and the passage part supply pipe 42 is provided with a passage part supply valve 421. . These valves are controlled to open / close (or flow rate adjustment control) in response to a signal from the gas supply control unit 43. The gas supply source 81 has a function of switching and supplying a plurality of types of gases such as a gas used for processing and a temporarily filled gas.
[0024]
The chamber supply pipe 41 is connected to the side surface of the upper portion of the chamber 21, and the gas supplied from the chamber supply pipe 41 is sent upward from the opening plate 23 to the upper surface of the substrate 9 from the opening of the opening plate 23. To be supplied. The gas supply to the passage portion 31 will be described later.
[0025]
The exhaust system 5 includes a chamber exhaust pipe 51 serving as a flow path for gas exhausted from the chamber 21 (processing space 21 s), and a passage section serving as a flow path for gas exhausted from the passage section 31 (passage space 31 s). The exhaust pipe 52 is provided. Further, the chamber exhaust pipe 51 and the passage part exhaust pipe 52 are branched into two, respectively, and one of them is passed through large flow valves 511 and 521 to a utility exhaust apparatus (not shown) provided in the factory. The other is connected to the utility exhaust device via small flow valves 512, 522. The large flow valves 511 and 512 and the small flow valves 512 and 522 are controlled to be opened and closed independently by the exhaust control unit 53.
[0026]
In the substrate processing apparatus 1, the gas inside the chamber 21 is replaced by supplying a required gas from the chamber supply pipe 41 and exhausting the gas from the chamber exhaust pipe 51. The supply pipe 41, the chamber exhaust pipe 51, and the surrounding configuration are configured to replace the gas inside the chamber 21.
[0027]
The chamber exhaust pipe 51 is connected to the lower part of the chamber 21, and exhausts the gas inside the chamber 21 from the opening on the lower surface side of the substrate 9 (gap near the pin 22). The exhaust of gas from the passage portion 31 will be described later.
[0028]
Next, the form of the passage portion 31 of the substrate processing apparatus 1 will be described.
[0029]
3 and 4 are enlarged views of the passage portion 31 shown in FIGS. 1 and 2, respectively. FIG. 5 is a view of the passage portion 31 as viewed from the carry-in / out port 31a side.
[0030]
As shown in FIG. 3, the passage portion supply pipe 42 is connected to a side surface (a side surface on the Y direction side) of the passage portion 31. A plurality of supply ports 422 communicating with the passage portion supply pipe 42 are formed in the passage portion 31, and a predetermined gas is ejected from the supply port 422 toward the inside of the passage portion 31. That is, the supply port 422 is formed so as to be unevenly distributed in the outer edge direction of the substrate 9 in the horizontal posture to be transported and to eject gas toward the outer edge portion of the substrate 9. These supply ports 422 are formed so as to be arranged in two upper and lower rows, and the substrate 9 is conveyed in the horizontal direction between the two rows of supply ports 422. Therefore, a predetermined gas is ejected from the two rows of supply ports 422 toward the upper and lower main surfaces of the substrate 9.
[0031]
Furthermore, as shown in FIG. 4, the flow path 422a in the vicinity of each supply port 422 is formed to be inclined toward the carry-in / out port 31a, and gas is ejected from the supply port 422 toward the carry-in / out port 31a. As shown in FIG. 4, a supply chamber 423 serving as a buffer is provided between the supply port 422 and the passage portion supply pipe 42 so that the gas is ejected from each supply port 422 almost evenly.
[0032]
The passage portion exhaust pipe 52 is connected to the lower portion of the passage portion 31 as shown in FIG. 3, and the exhaust port 523 connected to the passage portion exhaust pipe 52 faces the insulating valve 32 side below the carry-in / out port 31a. Is formed. In addition, as shown in FIG. 5, the carry-in / out entrance 31a has an opening that is long in the Y direction so that the horizontal position of the substrate 9 can be taken in and out in order to keep the passage space 31s small. The opening is long in the Y direction along the lower side of the carry-in / out entrance 31a. The exhaust port 523 is connected to the passage portion exhaust pipe 52 via a plurality of openings 524.
[0033]
Thus, the exhaust port 523 is not formed inside the passage portion 31 but is formed on the outer wall of the passage portion 31. This is because when the exhaust port 523 is formed in the passage portion 31, outside air enters the passage portion 31 when exhaust is performed with the insulating valve 32 open. That is, the exhaust port 523 exhausts the gas in the passage portion 31 from the carry-in / out port 31a side. Note that a step (see FIG. 3) is provided below the carry-in / out port 31a so that the gas in the passage 31 can be exhausted from the exhaust port 523 even when the insulating valve 32 is closed. Even in this state, the passage space 31s and the exhaust port 523 communicate with each other.
[0034]
Next, operations of the supply system 4 and the exhaust system 5 when the substrate 9 is carried in and out of the substrate processing apparatus 1 and during processing will be described.
[0035]
FIG. 6 is a diagram showing the operation of the supply system 4 and the exhaust system 5 when the substrate 9 is carried into the chamber 21 from the carry-in / out entrance 31a via the passage portion 31, and the substrate processing apparatus is viewed from the direction corresponding to FIG. The state when 1 is seen is shown conceptually. 6, arrows 41f and 42f indicate the state of gas supply from the chamber supply pipe 41 and the passage supply pipe 42, respectively, and the arrows 51f and 52f indicate the chamber supply pipes, respectively. The state of the gas exhausted from the exhaust pipe 51 and the passage exhaust pipe 52 is shown.
[0036]
When the substrate 9 is carried in, nitrogen gas (N₂And the like are supplied from the chamber supply pipe 41 (arrow 41f). Also in the passage portion 31, nitrogen gas is supplied toward the carry-in / out port 31a (arrow 42f). In these supply operations, the gas supplied from the gas supply source 81 shown in FIG. 1 is switched to nitrogen gas, and the chamber supply valve 411 and the passage supply valve 421 are opened in response to a signal from the gas supply control unit 43. Is done.
[0037]
On the other hand, on the exhaust side, the small flow rate valves 512 and 522 are opened with the large flow rate valves 511 and 521 closed in response to a signal from the exhaust control unit 53. As a result, exhaust is performed at a small flow rate from the chamber exhaust pipe 51 and the passage part exhaust pipe 52 (arrows 51f and 52f). That is, the flow rate of the nitrogen gas supplied in the processing space 21s and the passage space 31s is larger than the flow rate of the exhausted gas, a gas flows from the processing space 21s toward the passage space 31s, and in the passage space 31s. In the vicinity of the carry-in / out port 31a, a strong gas flow toward the carry-in / out port 31a is generated in response to the gas flow supplied from the supply port 422. As a result, it is possible to prevent outside air from being entrained with the loading of the substrate 9. Note that the exhaust from the exhaust pipe 52 for the passage section may be stopped by closing the small flow valve 522 on the passage section 31 side.
[0038]
By the way, in this substrate processing apparatus 1, the supply port 422 is preferably arranged to prevent the outside air from being caught when the substrate 9 is carried in. That is, gas is ejected from the supply port 422 toward the carry-in / out port 31a, and the supply ports 422 are provided in two upper and lower rows so as to be unevenly distributed in the outer edge direction of the substrate 9.
[0039]
As shown in FIG. 4, in the vicinity of the supply port 422, the flow path 422a is formed to be inclined toward the carry-in / out port 31a, so that the gas ejected from the supply port 422 flows uniformly toward the carry-in / out port 31a. It has become. This is because if the gas is ejected perpendicularly from the supply port 422 to the inner wall of the passage portion 31, a part of the ejected gas may flow into the chamber 21 side. Therefore, in this substrate processing apparatus 1, the outside air that is entrained with the loading of the substrate 9 can be surely expelled from the passage portion 31 by ejecting gas from the supply port 422 toward the loading / unloading port 31 a.
[0040]
In the substrate processing apparatus 1, gas is supplied from the outer edge direction of the substrate 9 to be transported. This is because if the gas is supplied from a direction perpendicular to the main surface of the substrate 9, the gas flow is blocked by the substrate 9. If gas is supplied from the upper surface side of the substrate 9 in the passage portion 31, the gas flow is not transmitted to the lower surface side of the substrate 9, and outside air flows from the lower surface side of the substrate 9 to the chamber 21 side. Therefore, gas is supplied from the outer edge direction of the substrate 9 so that the gas flow is not hindered by the substrate 9.
[0041]
Further, for the same reason, in the substrate processing apparatus 1, supply ports 422 are provided on the upper surface side and the lower surface side of the substrate 9 in order to surely generate a gas flow toward the carry-in / out port 31 a on the upper surface and the lower surface of the substrate 9. Are arranged in two rows.
[0042]
As described above, the passage portion 31 of the substrate processing apparatus 1 reliably prevents the outside air from being involved when the substrate 9 is carried in, and sufficiently maintains the atmosphere around the substrate 9 when the substrate 9 is processed. can do. In addition, when the board | substrate 9 is carried out, the same operation | movement of prevention of external air entrainment is performed. Further, it is also possible to quickly carry out the loading / unloading operation of the substrate 9 by preventing the outside air from being involved in this way.
[0043]
Next, the gas replacement operation in the chamber 21 performed before and after the processing of the substrate 9 or during the processing of the substrate 9 will be described with reference to FIG. FIG. 7 is a conceptual diagram showing the operation of the supply system 4 and the exhaust system 5 in the same manner as in FIG. Further, the carry-in / out port 31 a is closed by the insulating valve 32.
[0044]
Gas replacement (eg ammonia gas (NH_Three) To nitrogen gas (N₂) Is performed, the type of gas supplied from the gas supply source 81 is changed, and the chamber supply valve 411 and the passage supply valve 421 are activated by a signal from the gas supply control unit 43. Can be opened. As a result, predetermined gases are supplied from the chamber supply pipe 41 and the passage portion supply pipe 42 into the chamber 21 and the passage portion 31, respectively (arrows 41f and 42f).
[0045]
On the other hand, on the exhaust side, the large flow rate valves 511 and 521 are opened with the small flow rate valves 512 and 522 being closed by a signal from the exhaust control unit 53. As a result, gas is exhausted at a large flow rate from the chamber exhaust pipe 51 and the passage part exhaust pipe 52 (arrows 51f and 52f). As a result, the gas in the chamber 21 is quickly replaced, and the gas is quickly replaced in the passage portion 31 without stagnation. As described above, the substrate processing apparatus 1 can perform the processing of the substrate 9 after sufficiently replacing the gas in the passage portion 31 with the predetermined gas, so that the atmosphere around the substrate 9 is sufficiently adequate. Can be maintained.
[0046]
In the gas replacement operation, strong exhaust is performed from the chamber exhaust pipe 51 and the passage part exhaust pipe 52. On the other hand, the chamber in the operation at the time of loading and unloading the substrate 9 shown in FIG. As described above, the total exhaust flow from the exhaust pipe 51 and the passage exhaust pipe 52 is relatively smaller than the exhaust flow at the time of gas replacement.
[0047]
FIG. 8 is a conceptual diagram showing the operation of the supply system 4 and the exhaust system 5 during the processing of the substrate 9, and the gas flow is denoted by reference numerals as in FIG. 6. Further, the carry-in / out port 31 a is closed by the insulating valve 32.
[0048]
In the processing of the substrate 9, the passage supply valve 421 is closed and the chamber supply valve 411 is opened by a signal from the gas supply control unit 43. Thus, the supply of gas from the passage portion supply pipe 42 is stopped, and a predetermined processing gas is supplied from the chamber supply pipe 41 into the chamber 21 (arrow 41f). Then, the large flow rate valve 511 is opened in a state where the small flow rate valve 512 on the chamber 21 side is closed by a signal from the exhaust control unit 53. As a result, the substrate 9 receives a uniform flow of the processing gas from above, and further receives the radiation from the heater 61 to perform a uniform processing (arrow 51f).
[0049]
As the exhaust on the passage portion 31 side, only the small flow valve 522 is opened and exhausted at a small flow rate (arrow 52f). For example, when processing is performed with ammonia gas from a state where the inside of the chamber 21 and the passage portion 31 is filled with nitrogen gas, the nitrogen gas remaining in the passage portion 31 is in-plane uniformity of processing of the substrate 9 ( For example, a small amount of air is exhausted from the passage portion 31 to such an extent that the film thickness distribution formed on the surface of the substrate 9 is not impaired. In addition, when the inside of the passage portion 31 has an atmosphere similar to the atmosphere of the processing gas by the replacement operation performed prior to the processing, the exhaust from the passage portion 31 may be stopped.
[0050]
As described above, in the substrate processing apparatus 1, the processing gas can be uniformly supplied from the upper surface of the substrate 9 when processing the substrate 9, so that the in-plane uniformity of processing of the substrate 9 is impaired. There is nothing.
[0051]
As described above, the substrate processing apparatus 1 is an apparatus having an atmospheric pressure specification. However, since the gas can be supplied into the passage portion 31, it is possible to prevent entrainment of outside air when the substrate 9 is carried in and out. It has been realized. Further, the gas in the passage 31 can be exhausted, and the exhaust from the chamber 21 and the passage 31 can be switched between a high flow rate exhaust and a small flow rate exhaust. The gas replacement inside can also be performed appropriately. Further, since the processing gas can be supplied uniformly from the upper surface to the lower surface of the substrate 9 in the chamber 21, the in-plane uniformity of the processing of the substrate 9 is not impaired.
[0052]
In addition, the substrate processing apparatus 1 is also preferably provided with a supply port 422 so that outside air can be effectively prevented from being involved.
[0053]
Next, a case where the passage portion supply pipe 42 is not used will be described as another operation mode of the substrate processing apparatus 1.
[0054]
FIG. 9 is a diagram showing the operation of the supply system 4 and the exhaust system 5 when the substrate 9 is carried in and out, and uses the same expression method as in FIG. In the operation shown in FIG. 9, nitrogen gas is supplied from the chamber supply pipe 41 in the chamber 21 (arrow 41f), and weak exhaust is performed from the chamber exhaust pipe 51 (exhaust is not performed from the chamber exhaust pipe 51). (Arrow 51f). In the passage portion 31, gas is exhausted from the passage portion exhaust pipe 52 (arrow 52f). It is assumed that the gas supply amount to the chamber 21 is sufficiently larger than the exhaust amount from the chamber exhaust pipe 51.
[0055]
Thereby, in the channel | path part 31, the flow of the gas which goes to the entrance / exit 31a from the chamber 21 can be produced, and the entrainment of external air can be prevented like the example shown in FIG.
[0056]
FIG. 10 is a diagram showing the operation of the supply system 4 and the exhaust system 5 when the gas is replaced after the substrate 9 is carried. At the time of gas replacement, gas is supplied from the chamber supply pipe 41 in the chamber 21 and strong exhaust is also performed from the chamber exhaust pipe 51 (arrows 41f and 51f). In the passage portion 31, gas is exhausted relatively strongly from the passage portion exhaust pipe 52 (arrow 52f).
[0057]
Thus, unnecessary gas in the passage portion 31 flows from the chamber 21 side to the carry-in / out port 31a and is exhausted from the passage portion exhaust pipe 52.
[0058]
Further, in the processing after the gas replacement, the same operation as the example shown in FIG. 8 is performed.
[0059]
9, 10, and 8 illustrate the operation of the substrate processing apparatus 1 when no gas is supplied from the passage portion supply pipe 42 of the passage portion 31. In this way, depending on the type of processing, only the exhaust of the passage portion is activated, so that the entrainment of outside air can be prevented, and further, the gas can be uniformly supplied to the surface of the substrate 9 in the chamber 21. Therefore, the in-plane uniformity of processing of the substrate 9 can be maintained.
[0060]
As mentioned above, although the structure and operation | movement of the substrate processing apparatus 1 which is one embodiment of this invention were demonstrated, this invention is not limited to the said embodiment, Various deformation | transformation are possible.
[0061]
For example, in the above-described embodiment, the substrate 9 is heated and processed by the heater 61. However, depending on the content of the process, a process without heating may be used.
[0062]
Moreover, in the said embodiment, although the chamber 21 has the column-shaped external shape, a rectangular parallelepiped shape may be sufficient and the boundary of the chamber 21 and the channel | path part 31 does not need to be clear. That is, the chamber 21 may have a rectangular parallelepiped shape, and a part of the chamber 21 may function as the passage portion 31.
[0063]
In the above-described embodiment, the substrate 9 is heated by the heater 61. However, a so-called lamp annealing apparatus that heats by a halogen lamp through a quartz window may be used.
[0064]
Further, the contents of the processing performed by the present invention are not limited to those exemplified in the above embodiment, and the gas used for the processing may be arbitrarily changed according to the type of processing.
[0065]
In addition, each supply pipe and each exhaust pipe in the above-described embodiment may be in the form of a flow path formed inside a certain configuration, not in the form of a pipe.
[0066]
In the above embodiment, the supply port 422 is formed in the inner wall of the passage portion 31. For example, even if the distal end of the tubular body extending from the inner wall of the passage portion 31 toward the carry-in / out port 31a is the supply port 422. Good.
[0067]
Moreover, as shown in FIG. 4, in the said embodiment, although gas is ejected from the inner wall of the both sides by the side of the Y direction of the channel | path part 31, gas can fully be ejected toward the carrying in / out port 31a. If possible, the supply port 422 may be provided only on one side. Further, as long as the gas can be sufficiently blown to the upper and lower main surfaces of the substrate 9, the supply ports 422 may be provided only in one row.
[0068]
Furthermore, although the gas supply source 81 has been described as being present outside the substrate processing apparatus 1 in the above embodiment, it may of course be provided inside the apparatus. Further, the gas may be individually guided to the substrate processing apparatus 1 through a valve for each type of gas. In this case, if there is a kind of gas that only needs to be supplied into the chamber 21, a chamber supply pipe connected only to the chamber 21 may exist.
[0069]
【The invention's effect】
  Claims 1 to 11In the invention described in (4), it is possible to prevent the outside air from being involved when the substrate is carried in and out of the processing chamber without considering the gas supply method in the processing chamber. Thereby, the atmosphere of the processing chamber can be strictly adjusted without impairing the in-plane uniformity of the substrate processing.
[0070]
  Also,Claim 1In the invention described in the above, the gas in the passage portion can be appropriately replaced by exhausting while supplying the gas into the passage portion.
[0071]
  Also,Claims 5 and 7In the invention described in the above, it is possible to prevent entrainment of outside air on both main surface sides of the substrate,Claim 6In the invention described in (3), it is possible to further reliably prevent the outside air from being involved by ejecting the gas toward the carry-in / out port.
[0072]
  further,Claims 1 to 11In the invention described in (1), since the gas can flow from one main surface side to the other main surface side, the in-plane uniformity of the processing of the substrate can be reliably maintained.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view of a substrate processing apparatus according to an embodiment of the present invention.
2 is a cross-sectional view of the substrate processing apparatus shown in FIG.
FIG. 3 is a longitudinal sectional view of a passage portion.
FIG. 4 is a cross-sectional view of a passage portion.
FIG. 5 is a diagram showing a passage portion from the carry-in / out entrance side.
FIG. 6 is a conceptual diagram showing how gas is supplied and exhausted when a substrate is carried in and out.
FIG. 7 is a conceptual diagram showing how gas is supplied and exhausted during gas replacement.
FIG. 8 is a conceptual diagram showing how gas is supplied and exhausted when a substrate is processed.
FIG. 9 is a conceptual diagram showing how gas is supplied and exhausted when a substrate is carried in and out.
FIG. 10 is a conceptual diagram showing how gas is supplied and exhausted during gas replacement.
[Explanation of symbols]
1 Substrate processing equipment
9 Board
21 chambers
31 Passage
31a Unloading entrance 31a
32 Insulation valve
41 Supply pipe for chamber
42 Supply pipe for passage
43 Gas supply controller
51 Exhaust pipe for chamber
52 Exhaust pipe for passage
53 Exhaust control unit
61 Heater
411 Chamber supply valve
422 Supply port
422a flow path
511, 521 Large flow valve
512, 522 Small flow valve

Claims (11)

A single-wafer type substrate processing apparatus for performing predetermined processing on a substrate at normal pressure,
A processing chamber in which the predetermined processing is performed on the substrate;
A passage part that has an opening / closing port that can be opened and closed, and is connected to the processing chamber to form a space that serves as a substrate passage from the loading / unloading port to the processing chamber;
Processing means for performing the predetermined processing on the substrate in the processing chamber ;
A gas supply passage for a passage portion connected to the passage portion as a gas supply passage into the passage portion;
A gas exhaust passage for a passage portion connected to the passage portion as an exhaust passage for gas from within the passage portion;
A gas supply passage for the processing chamber connected to the processing chamber for supplying gas from one main surface side of the substrate disposed in the processing chamber;
A gas exhaust passage for the processing chamber connected to the processing chamber for exhausting gas from the other main surface side of the substrate disposed in the processing chamber;
When the substrate is carried into and out of the processing chamber, gas is supplied from the processing chamber gas supply passage and the passage portion gas supply passage, and gas is supplied from the passage portion gas exhaust passage at a first flow rate. Exhaust,
When replacing the gas in the processing chamber with the loading / unloading port closed, gas is supplied from the processing chamber gas supply passage and the passage portion gas supply passage, and from the passage portion gas exhaust passage. Exhausting the gas at a second flow rate greater than the first flow rate;
When the predetermined processing is performed in the processing chamber, gas is supplied from the processing chamber gas supply passage and exhausted from the processing chamber gas exhaust passage, while the passage portion gas is supplied. Gas supply and exhaust control means for controlling supply and exhaust of gas so as to stop the supply of gas from the supply path;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The gas supply / exhaust control means comprises:
A substrate processing apparatus , wherein when the predetermined processing is performed in the processing chamber, gas is exhausted at the first flow rate from the gas exhaust passage for passage portion . The substrate processing apparatus according to claim 1, wherein:
The gas supply / exhaust control means comprises:
When the substrate is carried into and out of the processing chamber, gas is exhausted from the processing chamber gas exhaust passage at a third flow rate,
When replacing the gas in the processing chamber with the carry-in / out port closed, and when the predetermined processing is performed in the processing chamber, the flow rate is larger than the third flow rate from the processing chamber gas exhaust passage. A substrate processing apparatus which exhausts gas at a fourth flow rate . A substrate processing apparatus according to any one of claims 1 to 3,
Each of the exhaust passage for the processing chamber and the exhaust passage for the passage portion is
A first flow valve for maintaining the flow rate of the gas flowing through the exhaust passage at a predetermined value;
A second flow valve for maintaining the flow rate of the gas flowing through the exhaust passage at a value smaller than the predetermined value;
With
The gas supply / exhaust control means comprises:
A substrate processing apparatus, wherein the first flow rate valve and the second flow rate valve provided in each of the processing chamber exhaust passage and the passage portion exhaust passage are controlled to open and close at a predetermined timing . The substrate processing apparatus according to claim 1, wherein:
In the passage part, a gas from the passage part gas supply path is blown toward both main surfaces of the substrate to be transported . A substrate processing apparatus according to any one of claims 1 to 5,
The substrate processing apparatus, wherein a flow path of the gas supply path for the passage section is inclined toward the carry-in / out opening in the vicinity of the gas supply port in the passage section communicating with the gas supply path for the passage section . A substrate processing apparatus according to any one of claims 1 to 6,
A substrate processing apparatus, wherein a gas supply port communicating with the gas supply passage for the passage section is unevenly distributed in an outer edge direction of a substrate to be transported . A single-wafer type substrate processing apparatus for performing predetermined processing on a substrate at normal pressure,
A processing chamber in which the predetermined processing is performed on the substrate;
A passage part that has an opening / closing port that can be opened and closed, and is connected to the processing chamber to form a space that serves as a substrate passage from the loading / unloading port to the processing chamber;
Processing means for performing the predetermined processing on the substrate in the processing chamber;
A gas exhaust passage for a passage portion connected to the passage portion as an exhaust passage for gas from within the passage portion;
A gas supply passage for the processing chamber connected to the processing chamber for supplying gas from one main surface side of the substrate disposed in the processing chamber;
A gas exhaust passage for the processing chamber connected to the processing chamber for exhausting gas from the other main surface side of the substrate disposed in the processing chamber;
When the substrate is carried into and out of the processing chamber and when the gas in the processing chamber is replaced while the carry-in / out port is closed, gas is supplied from the processing chamber gas supply path, and the passage portion Exhaust the gas at a first flow rate from the gas exhaust passage,
When the predetermined processing is performed in the processing chamber, gas is supplied from the processing chamber gas supply passage and exhausted from the processing chamber gas exhaust passage, while the passage portion gas is supplied. Gas supply / exhaust control means for controlling supply and exhaust of gas so as to exhaust gas at a second flow rate smaller than the first flow rate from the exhaust path;
A substrate processing apparatus, characterized in that it comprises a. The substrate processing apparatus according to claim 8, comprising:
The gas supply / exhaust control means comprises:
When the substrate is carried into and out of the processing chamber, gas is exhausted from the processing chamber gas exhaust passage at a third flow rate,
When replacing the gas in the processing chamber with the carry-in / out port closed , and when the predetermined processing is performed in the processing chamber, the flow rate is larger than the third flow rate from the processing chamber gas exhaust passage. A substrate processing apparatus which exhausts gas at a fourth flow rate .   The substrate processing apparatus according to claim 9, comprising:
  Each of the exhaust passage for the processing chamber and the exhaust passage for the passage portion is
  A first flow valve for maintaining the flow rate of the gas flowing through the exhaust passage at a predetermined value;
  A second flow valve for maintaining the flow rate of the gas flowing through the exhaust passage at a value smaller than the predetermined value;
With
  The gas supply / exhaust control means comprises:
  A substrate processing apparatus, wherein the first flow rate valve and the second flow rate valve provided in each of the processing chamber exhaust passage and the passage portion exhaust passage are controlled to be opened and closed at a predetermined timing. .   A substrate processing apparatus according to any one of claims 1 to 10,
  The substrate processing apparatus, wherein the predetermined process is a process involving heating of the substrate.

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