JP4268433B2 - Plasma processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma processing apparatus used in, for example, a liquid crystal glass cleaning process, a flexible substrate desmear process, a printing rubber surface treatment process, and the like.
[0002]
[Prior art]
Conventionally, as a device for performing surface treatment of a substrate using discharge plasma, a parallel plate type counter electrode made up of a pair of upper and lower electrodes is disposed under a substantially normal pressure, and the substrate is placed on the lower electrode of the counter electrode. A plasma processing apparatus has been proposed in which a processing gas is introduced between opposed electrodes and an electric field is applied between the opposed electrodes to generate discharge plasma, and surface treatment of the substrate is performed with the generated plasma. (For example, refer to Patent Document 1).
[0003]
As such a plasma processing apparatus, of the upper and lower electrodes, the upper electrode can be moved up and down, the base electrode is set on the lower electrode with the upper electrode separated upward, An apparatus configured to take out a material has been proposed (see, for example, Patent Document 2).
[0004]
Further, a structure has been proposed in which electrodes can be exchanged in a plasma processing apparatus. For example, a technique has been proposed in which mounting / removal of electrodes can be performed relatively easily by providing a counterbored portion on a circular electrode plate to provide a fitting structure (see, for example, Patent Document 3).
[0005]
[Patent Document 1]
Japanese Patent No. 3040358 [Patent Document 2]
JP 2002-126675 A [Patent Document 3]
Japanese Patent Laid-Open No. 2000-12297 [0006]
[Problems to be solved by the invention]
By the way, according to the plasma processing apparatus described in Patent Document 1, since the pair of upper and lower electrodes are fixed, the base material is arranged on the lower electrode as the distance between the electrodes is set narrower. Becomes difficult. On the other hand, in the plasma processing apparatus described in Patent Document 2, although the upper electrode can move up and down, a large force is required to lift the upper electrode. Further, when the upper electrode is lowered, there is a risk of being pinched if a finger is mistakenly placed between the electrodes.
[0007]
In the technique described in Patent Document 3, the gas blowing hole and the electrode are fitted to each other. However, it is necessary to replace the electrode in a narrow space and to fix the electrode by screwing. Because there are, changing electrodes is not so easy. In addition, in the case of a structure that moves the electrode, if the target device is a device that is used in a low vacuum such as a CVD device, it is necessary to install a seal on the moving part, and the seal part can be moved by parallel movement or rotation. The seal material may be damaged.
[0008]
The present invention has been made to solve such problems, and it is possible to easily perform the arrangement / removal operation of the base material between the parallel plate type counter electrodes and the mounting / removal operation of the electrodes. An object is to provide a possible plasma processing apparatus.
[0009]
[Means for Solving the Problems]
The plasma processing apparatus of the present invention has a parallel plate type counter electrode composed of a pair of electrodes facing each other with a certain interval in the facing direction, and a power source for applying an electric field between the facing electrodes. In a plasma processing apparatus for processing a base material using plasma generated by applying an electric field between electrodes, one electrode of the pair of electrodes is moved perpendicular to the facing direction with respect to the other electrode A moving mechanism that is moved in parallel in a direction (sliding) and selectively positioned at one of a processing position for performing the processing and a retracting position for setting and removing the base material. The one electrode is set or set to the other electrode when viewed from the opposite direction while maintaining the predetermined distance from the other electrode in the opposite direction. That is retracted to the outside of the area occupied by the wood are first features.
Further, the plasma processing apparatus of the present invention has a parallel plate type counter electrode composed of a pair of electrodes facing each other with a certain interval in the facing direction, and a power source for applying an electric field between the counter electrodes, In a plasma processing apparatus for processing a substrate using plasma generated by applying an electric field between the counter electrodes, one electrode of the pair of electrodes is orthogonal to the counter direction with respect to the other electrode A pair of movement mechanisms arranged to extend in the movement direction on both sides in a direction perpendicular to both the facing direction and the movement direction with the other electrode interposed therebetween. Guide means, a pair of slide frames slidably provided in the moving direction along the guide means, and a support frame spanned between the slide frames When, wherein the said one electrode to the support frame that are supported, and a second feature which is not claimed.
[0010]
According to the plasma processing apparatus of the present invention, even if the distance between the pair of electrodes constituting the counter electrode is narrow, one electrode (for example, the upper electrode) is slid to move the other electrode (the lower electrode). By setting it at a position where it does not interfere (retracted position), it is possible to easily set and take out the base material. In addition, cleaning such as removal of foreign matters attached to the electrodes is simplified.
[0011]
Furthermore, since one electrode is slid by the moving mechanism, the force required to move the electrode can be reduced. Moreover, even when a finger or a hand is mistakenly placed on the other electrode when the one electrode is moved to the processing position, it can be prevented from being pinched between the electrodes, thereby improving safety. be able to. In addition, since the electrode is detachably fixed to the moving mechanism, the electrode can be easily attached / detached.
[0012]
In the plasma processing apparatus of the present invention, an adjusting means for adjusting the distance between the electrodes of the pair of electrodes constituting the counter electrode may be provided. If such an adjusting means is provided, the adjustment work can be easily performed when the distance between the electrodes needs to be changed depending on the form (type, thickness, etc.) of the substrate to be processed.
[0013]
Next, the present invention will be described in more detail.
[0014]
First, substantially under normal pressure referred to in the present invention refers to under a pressure of 1.333 × 10 ^{4 to} 10.664 × 10 ⁴ Pa. Among them, easy pressure adjustment, is preferably in the range of ^{9.331 × 10 4 ~10.397 × 10 4} Pa for device configuration is simplified.
[0015]
In the present invention, examples of the material of the electrode (electrode body) constituting the counter electrode include simple metals such as iron, copper, and aluminum, alloys such as stainless steel and brass, and intermetallic compounds. The pair of electrodes constituting the counter electrode preferably has a structure in which the distance between the counter electrodes (plasma space) is constant in order to avoid occurrence of arc discharge due to electric field concentration.
[0016]
In the present invention, a solid dielectric must be disposed between the counter electrodes. Specifically, a solid dielectric may be disposed on at least one of the pair of electrodes constituting the counter electrode. At this time, it is preferable that the solid dielectric and the electrode on the side to be installed are in close contact with each other and the opposite surface of the electrode in contact is completely covered. If there is a portion where the electrodes directly face each other without being covered by the solid dielectric, arc discharge is likely to occur therefrom.
[0017]
The solid dielectric may be in the form of a sheet or a film. The thickness of the solid dielectric is preferably 0.01 to 4 mm. If the thickness of the solid dielectric is too thick, a high voltage may be required to generate discharge plasma, and if it is too thin, dielectric breakdown may occur during voltage application and arc discharge may occur. The solid dielectric may be a film coated on the electrode surface by a thermal spraying method.
[0018]
Examples of the solid dielectric include plastics such as polytetrafluoroethylene and polyethylene terephthalate, glass, metal dioxide such as silicon dioxide, aluminum oxide, zirconium dioxide, and titanium dioxide, and double oxides such as barium titanate. It is done.
[0019]
The solid dielectric preferably has a relative dielectric constant of 2 or more (25 ° C. environment, the same applies hereinafter). Specific examples of the solid dielectric having a relative dielectric constant of 2 or more include polytetrafluoroethylene, glass, and metal oxide film. Further, in order to stably generate a high density discharge plasma, it is preferable to use a solid dielectric having a relative dielectric constant of 10 or more. The upper limit of the relative dielectric constant is not particularly limited, but about 18,500 is known as an actual material. Examples of the solid dielectric having a relative dielectric constant of 10 or more include a metal oxide film mixed with 5 to 50% by weight of titanium oxide and 50 to 95% by weight of aluminum oxide, or a metal oxide containing zirconium oxide. The thing which consists of a material film can be mentioned.
[0020]
The distance between the electrodes of the counter electrode used in the present invention is appropriately determined in consideration of the thickness of the solid dielectric, the magnitude of the applied voltage, the purpose of using plasma, and the like, but is 0.1 to 5 mm. preferable. If the distance between the electrodes is less than 0.1 mm, it may not be sufficient to install the pair of electrodes at a distance between the electrodes, whereas if it exceeds 5 mm, it is difficult to generate uniform discharge plasma. Furthermore, the preferable distance between electrodes is 0.5-3 mm in which discharge is easy to stabilize.
[0021]
An electric field such as a high frequency, a pulse wave, or a microwave is applied between the electrodes of the counter electrode to generate plasma, but it is preferable to apply a pulse electric field, and in particular, the rise time and / or the fall time of the electric field. A pulsed electric field of 10 μs or less is preferred. If it exceeds 10 μs, the discharge state tends to shift to an arc and becomes unstable, and it becomes difficult to maintain a high-density plasma state by a pulse electric field. Also, the shorter the rise time and fall time, the more efficiently ionization of the gas during plasma generation, but it is actually difficult to realize a pulsed electric field with a rise time of less than 40 ns. A more preferable range of the rise time and the fall time is 50 ns to 5 μs. The rise time here refers to the time during which the voltage (absolute value) increases continuously, and the fall time refers to the time during which the voltage (absolute value) decreases continuously.
[0022]
The electric field strength of the pulse electric field is 1-1000 kV / cm, preferably 20-300 kV / cm. If the electric field strength is less than 1 kV / cm, the process takes too much time, and if it exceeds 1000 kV / cm, arc discharge tends to occur.
[0023]
The frequency of the pulse electric field is preferably 0.5 kHz or more. If it is less than 0.5 kHz, the plasma density is low, and the process takes too much time. The upper limit is not particularly limited, but it may be a high frequency band such as 13.56 MHz that is commonly used and 500 MHz that is used experimentally. In consideration of ease of matching with the load and handling, 500 kHz or less is preferable. By applying such a pulse electric field, the processing speed can be greatly improved.
[0024]
Moreover, it is preferable that one pulse duration in the said pulse electric field is 200 microseconds or less, More preferably, it is 3-200 microseconds. If it exceeds 200 μs, it tends to shift to arc discharge. Here, one pulse duration means a continuous ON time of one pulse in a pulse electric field composed of repetition of ON / OFF.
[0025]
Base materials (substrates) that can be treated in the present invention include polyethylene, polypropylene, polystyrene, polycarbonate, polyethylene terephthalate, polyimide, liquid crystal polymer, epoxy resin, polytetrafluoroethylene, acrylic resin and other plastics, glass, ceramic, metal, silicon A wafer etc. are mentioned. Examples of the shape of the substrate include a plate shape and a film shape, but are not particularly limited thereto. According to the present invention, it is possible to easily cope with processing of base materials having various shapes.
[0026]
The processing gas used in the present invention is not particularly limited as long as it is a gas that generates plasma by applying an electric field, and various gases can be used depending on the purpose of substrate processing. Moreover, even if it is liquid at normal temperature, any substance that can be vaporized in the treatment system can be used. Examples of the processing gas include air, nitrogen, oxygen, argon, helium, fluorine gas such as CF ₄ , organic substances such as alcohol, TEOM [tetraethoxysilane: Si (OC ₂ H ₅ ) ₄ ], titanium tetraisopropoxy. Examples thereof include alkoxides which are raw materials (precursors) of metal oxides such as metal oxides. These may be used alone or in admixture of two or more.
[0027]
In addition, according to the plasma processing apparatus of this invention, it is possible to generate glow discharge plasma irrespective of the kind of gas which exists in plasma generation space. Further, in the atmospheric pressure plasma treatment under a specific gas atmosphere, it is essential to perform the treatment in a sealed container that is shielded from the outside air. However, in the plasma treatment apparatus of the present invention, an open system or a gas is used. It is possible to perform processing in a low airtight system that prevents the free flow of water.
[0028]
In the plasma processing apparatus of the present invention, it is possible to generate a discharge directly under the atmospheric pressure between the counter electrodes, a more simplified electrode structure, an atmospheric pressure plasma apparatus based on a discharge procedure, and a processing technique and high-speed processing. Can be realized. In addition, parameters relating to processing can be adjusted by parameters such as frequency, voltage, and electrode interval of the applied electric field.
[0029]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0030]
FIG. 1 is a front view (A) and a plan view (B) schematically showing an embodiment of the plasma processing apparatus of the present invention.
[0031]
The plasma processing apparatus of FIG. 1 includes a parallel plate type counter electrode 1 composed of an upper electrode 2 and a lower electrode 3, a power source 4, a processing gas supply source 5, a main base 6, a moving mechanism 7, and the like.
[0032]
The upper electrode 2 and the lower electrode 3 of the counter electrode 1 are arranged to face each other with a predetermined distance (distance between electrodes), and a discharge space (plasma space) 10 is formed between the upper electrode 2 and the lower electrode 3. It is formed.
[0033]
The upper electrode 2 includes an electrode body 21 made of a conductive material and an electrode holder 22 made of an insulating material, and a dielectric plate 23 (FIG. 2) is disposed on the lower surface (electrode facing surface) of the electrode body 21. . In the electrode holder 22 of the upper electrode 2, female screw holes 22 a (FIG. 2) are formed at positions corresponding to through holes 71 a. The upper electrode 2 is an electrode on the voltage application side, and is connected to a power source 4.
[0034]
The lower electrode 3 includes an electrode body 31 made of a conductive material and an electrode holder 32 made of an insulating material, and a dielectric plate (not shown) is disposed on the upper surface (electrode facing surface) of the electrode body 31. . The lower electrode 3 is fixed to the main base 6. The lower electrode 3 is placed on the ground.
[0035]
And in the plasma processing apparatus of the above structure, while arrange | positioning the counter electrode 1 under a substantially normal pressure (under the pressure of atmospheric pressure vicinity), the base material S is arrange | positioned on the lower electrode 3. FIG. Next, a processing gas (for example, dry air) is supplied from the processing gas supply source 5 between the upper electrode 2 and the lower electrode 3, and exhausted by a gas exhaust unit (not shown) so as to be at substantially normal pressure. In this state, an electric field (for example, a high voltage pulse electric field) from the power source 4 is applied between the upper electrode 2 and the lower electrode 3. By applying this electric field, glow discharge plasma is generated in the discharge space 10 formed between the upper electrode 2 and the lower electrode 3, and the plasma contacts the surface of the substrate S, whereby the surface treatment of the substrate S is performed. (For example, processing such as washing, desmearing, etc.) is performed.
[0036]
-Description of moving mechanism-
Next, the electrode moving mechanism 7 which is a characteristic part of the present invention will be described.
[0037]
As shown in FIG. 1, the moving mechanism 7 includes a pair of front and rear horizontal frames 71 and 71 (support frames) , slide frames 72... 72 that support both ends of the horizontal frames 71 and 71, two linear guides 73, 73 etc., and is configured as a gantry type as a whole.
[0038]
The linear guide 73 is a member extending in the front-rear direction of the main base 6 and is disposed on both sides of the lower electrode 3. The slide frame 72 is a member arranged substantially perpendicular (substantially vertical) to the main base 6, and can slide along the linear guide 73 between the processing position P <b> 1 and the retracted position P <b> 2. Both end portions of the horizontal frames 71 and 71 are fixed to the upper end portions of the slide frames 72.
[0039]
Each horizontal frame 71, 71 is provided with two through-holes 71a (FIG. 2) for penetrating bolts (center distribution), and a pair of front and rear horizontal frames 71, 71 is provided using each through-hole 71a. The upper electrode 2 can be detachably fixed to 71. Specifically, as shown in FIG. 2, the upper electrode 2 is arranged below the horizontal frame 71, and the positions of the through holes 71 a of the horizontal frame 71 and the female screw holes 22 a of the upper electrode 2 (electrode holder 22). In a state where they are aligned (FIG. 2A), the fixing bolt 8 is inserted into the through hole 71a of the horizontal frame 71 from above, and the fixing bolt 8 is screwed into the female screw hole 22a of the electrode holder 22, whereby the upper electrode 2 Can be fixed to the horizontal frames 71, 71 (FIG. 2B). Instead of the linear guide 73, other guide means such as a linear shaft may be used.
[0040]
By providing the moving mechanism 7 having the above-described structure, the upper electrode 2 fixed to the horizontal frames 71 and 71 is slid in the front-rear direction, and selectively moved to either the processing position P1 or the retreat position P2. Can be arranged. Therefore, when the base material S is placed on the lower electrode 3 before the processing is started, the base material S can be easily set by placing the upper electrode 2 at the retracted position P2.
[0041]
In addition, after the processing is completed, the upper electrode 2 is moved from the processing position P1 to the retracted position P2, so that the substrate S after the processing can be easily taken out. Further, even if foreign matter or the like adheres to the upper electrode 2 or the lower electrode 3, by moving the upper electrode 2 to the retracted position P2, it is possible to easily clean the adhered matter.
[0042]
Moreover, since the upper electrode 2 is detachable from the horizontal frames 71 and 71 of the moving mechanism 7, the upper electrode 2 can be easily detached from the horizontal frames 71 and 71 at the retracted position P2, and the upper electrode 2 (lower The electrode 3 (including the electrode 3) can be easily replaced.
[0043]
In the above embodiment, the fixing bolt 8 and the female screw hole 72a are used as the fastening means of the upper electrode 2. However, the present invention is not limited to this, and the upper electrode 2 can be attached to and detached from the horizontal frame 71. Any other fastening means may be used as long as it can be fixed. An example is shown in FIG.
[0044]
The fastening means shown in FIG. 3 includes a locking member 80 including a substantially cylindrical head 81 and an insertion portion 82, and a locking hole 90 provided in the electrode holder 22 of the upper electrode 2. A groove 81 a into which a tool such as a screwdriver is inserted is machined in the head 81 of the lock member 80. A locking pin 83 is provided at the lower end of the lock member 80.
[0045]
On the other hand, the locking hole 90 includes an insertion portion 91 (FIG. 4A) having a cross-sectional shape through which the insertion portion 82 and the locking pin 83 of the lock member 80 can pass, and the engagement inserted through the insertion portion 91. A locking portion 92 for locking the pin 83 is provided. The locking surface 92a of the locking portion 92 is an inclined surface that is inclined in a spiral shape.
[0046]
4A and 4B show the cross-sectional shape (XX cross section in FIG. 3) of the insertion portion 91 of the locking hole 90 and the cross-sectional shape (YY cross section of FIG. 3) of the locking portion 92, respectively. Shown in The cross-sectional shape of the through hole 71b formed in the horizontal frame 71 is also the same as the cross-sectional shape of the insertion portion 91 of the locking hole 90 of the electrode holder 22 (FIG. 4A).
[0047]
In the fastening means shown in FIG. 3, the through hole 71b of the horizontal frame 71 is aligned with the through hole 71b of the horizontal frame 71 and the locking hole 90 of the upper electrode 2 (electrode holder 22). The lock member 80 is inserted from above and inserted into the locking hole 90 of the electrode holder 22, and then the lock member 80 is screwed in with the lower surface of the head 81 of the lock member 80 in contact with the upper surface of the horizontal frame 71. Rotate with. By the rotation of the lock member 80, the locking pin 83 at the tip comes into contact with the locking surface (spiral surface) 92a below the locking hole 90, and the locking pin 83 is pushed and locked by the locking surface 92a. The member 80 is pressed toward the electrode holder 22, and the upper electrode 2 is fixed to the horizontal frame 71 by this pressing force.
[0048]
Further, when the lock member 80 is rotated in the direction opposite to the above from such a fixed state, the locking pin 83 is detached from the locking surface 92a, and the upper electrode 2 can be detached from the horizontal frame 71.
[0049]
-Explanation of the mechanism for adjusting the distance between electrodes-
First, when performing processing by placing a substrate on the lower electrode of the counter electrode in a plasma processing apparatus, it is necessary to change the distance between the electrodes of the counter electrode depending on the form (type, thickness, etc.) of the substrate to be processed. There is. Specific examples of the adjusting mechanism are shown in FIGS.
[0050]
5 has a structure in which a horizontal frame 71 holding the upper electrode 2 is connected to a slide frame 72 by a connection bolt 101, and the horizontal frame 71 is connected to the slide frame 72 at a connection portion with a gap adjusting screw. It is characterized in that 102 is provided.
[0051]
In the adjusting mechanism shown in FIG. 5, (1) the connecting bolt 101 is loosened so that the horizontal frame 71 can move up and down with respect to the slide frame 72. (2) The gap adjusting screw 102 is operated to adjust the gap between the horizontal frame 71 and the slide frame 72, that is, the inter-electrode distance between the upper electrode 2 and the lower electrode 3. (3) The distance between the electrodes can be adjusted by the procedure of fastening the connecting bolt 101 and fixing the horizontal frame 71 to the slide frame 72.
[0052]
6 has a structure in which the horizontal frame 71 holding the upper electrode 2 is connected to the slide frame 72 by the connecting bolt 101, and between the lower surface of the horizontal frame 71 and the upper end surface of the slide frame 72. It is characterized in that a gap adjusting spacer (constant thickness) 103 is disposed.
[0053]
In the adjusting mechanism shown in FIG. 6, (1) the connecting bolt 101 is loosened so that the horizontal frame 71 can move up and down with respect to the slide frame 72. (2) The spacer 103 is sandwiched between the lower surface of the horizontal frame 71 and the upper end surface of the slide frame 72. (3) The distance between the electrodes can be adjusted by the procedure of fastening the connecting bolt 101 and fixing the horizontal frame 71 with the spacer 103 sandwiched between the slide frame 72.
[0054]
-Explanation of automatic movement mechanism-
A structure for automatically moving the upper electrode 2 is shown in FIGS.
[0055]
The automatic movement mechanism shown in FIG. 7 is replaced with one of the linear guides 73 and 73 arranged on both sides of the lower electrode 3 (the right side linear guide in FIG. 7) in the configuration shown in FIG. The ball screw 202 is disposed, and the ball screw 202 is screwed into each female screw hole 72 a provided in the slide frames 72 and 72. Further, the motor 201 is connected to the ball screw 202 via the coupling 203.
[0056]
In the automatic movement mechanism of this example, the upper electrode 2 fixed to the horizontal frame 71 can be moved in the front-rear direction by driving the motor 201 and rotating the ball screw 202, and the processing position P1 or The upper electrode 2 can be selectively disposed at any one of the retreat positions P2. The drive / stop and rotation direction of the motor 201 (upper electrode 2 in the front-rear direction) can be operated on the operation panel 200.
[0057]
In addition to the configuration shown in FIG. 1, the automatic movement mechanism in FIG. 8 includes one of linear guides 73 and 73 arranged on both sides of the lower electrode 3 (the right side linear guide in FIG. 8). A pair of front and rear timing pulleys 204, 205 disposed on the side, an endless timing belt 206 wound around the timing pulleys 204, 205, a fixing jig 207 for fixing the horizontal frame 71 to the timing belt 206, and a rear A motor 201 that rotates the timing pulley 205 on the side is provided.
[0058]
In the automatic movement mechanism of this example, the upper electrode 2 fixed to the horizontal frame 71 can be moved in the front-rear direction by driving the motor 201 and rotationally driving the timing belt 206, and the processing position P1. Alternatively, the upper electrode 2 can be selectively disposed at any one of the retreat positions P2. Also in this example, the driving / stopping and rotation direction of the motor 201 (the upper electrode 2 in the front-rear direction) can be operated with an operation panel (not shown).
[0059]
Here, the operation panel used for the automatic movement mechanism as described above is connected to a sequencer or the like provided in the plasma processing apparatus, so that the entire apparatus can be automated.
[0060]
【The invention's effect】
As described above, according to the plasma processing apparatus of the present invention, even if the distance between the electrodes of the pair of electrodes constituting the counter electrode is narrow, the retreat position where one electrode is slid and does not interfere with the other electrode. By disposing in this manner, it is possible to easily set and take out the base material, and it is also easy to perform cleaning such as removal of foreign matters attached to the electrodes. In addition, the force required to move one of the electrodes can be small. Moreover, even when a finger or a hand is mistakenly placed on the other electrode when the one electrode is moved to the processing position, it can be prevented from being pinched between the electrodes, thereby improving safety. be able to. In addition, since the electrodes are detachably fixed to the horizontal frame of the moving mechanism, it is possible to easily attach / remove the electrodes.
[Brief description of the drawings]
FIG. 1 is a diagram showing a front view (A) and a plan view (B) schematically showing a configuration of an embodiment of the present invention.
FIG. 2 is a cross-sectional view schematically showing a configuration of fastening means used in the embodiment of the present invention.
FIG. 3 is a cross-sectional view schematically showing another example of fastening means.
4 is a view showing both the XX sectional view (A) and the YY sectional view (B) of FIG. 3; FIG.
FIG. 5 is a diagram schematically showing a configuration of an adjustment mechanism used in an embodiment of the present invention.
FIG. 6 is a diagram schematically illustrating another example of an adjustment mechanism.
FIG. 7 is a diagram showing a front view (A) and a plan view (B) schematically showing the configuration of another embodiment of the present invention.
FIG. 8 is a diagram showing a front view (A), a plan view (B), and a side view (C) schematically showing the configuration of another embodiment of the present invention.
[Explanation of symbols]
1 Counter electrode 10 Discharge space (plasma space)
2 Upper electrode 21 Electrode body 22 Electrode holder 22a Female screw hole 23 Dielectric plate 3 Lower electrode 31 Electrode body 32 Electrode holder 4 Power supply 5 Processing gas supply source 6 Main base 7 Moving mechanism 71 Horizontal frame 71a, 71b Through hole 72 Slide frame 72a Female screw hole 73 Linear guide 8 Fixing bolt 80 Lock member 81 Head 82 Insertion part 83 Locking pin 90 Locking hole 91 Insertion part 92 Locking part 92a Locking surface 101 Connection bolt 102 Gap adjusting screw 103 Spacer 200 Operation panel 201 Motor 202 Ball screw 203 Coupling 204, 205 Timing pulley 206 Timing belt 207 Fixing jig P1 Processing position P2 Retraction position S Substrate

Claims (1)

A parallel plate type counter electrode composed of a pair of electrodes facing each other with a predetermined interval in the facing direction, and a power source for applying an electric field between the counter electrodes, and applying an electric field between the counter electrodes In the plasma processing apparatus for processing the substrate using the plasma generated by the above process, the electrode is parallelly moved in a moving direction perpendicular to the facing direction with respect to the other electrode with respect to the other electrode. A moving mechanism for selectively positioning at either one of a processing position for performing the above and a retreating position for setting and removing the base material, wherein the one electrode is disposed in the opposite direction at the retreating position. Japanese that is retracted to the outside of the other electrode with respect to the predetermined interval while maintaining the opposite when viewed from the direction is set to the other electrode or the set substrate occupied area To plasma processing apparatus.

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