JP7036063B2 - Plasma processing equipment - Google Patents

Description

The present invention relates to a plasma processing apparatus.

Conventionally, a technique of depressurizing the inside of a closed container to generate plasma and plasma-treating the work arranged in the closed container has been widely used. Further, in recent years, a technique for stably discharging plasma under atmospheric pressure has been established, and plasma processing in an open space has been realized. This eliminates the need for a strong closed container that can withstand decompression, and can realize an inexpensive plasma processing device.

A conventional plasma processing apparatus that performs plasma processing under atmospheric pressure is disclosed in Patent Document 1. The plasma processing apparatus of Patent Document 1 includes a HOT electrode to which a voltage is applied and a dielectric covering the surface of the HOT electrode. A conductive object to be treated is arranged so as to face the dielectric.

A processing gas is supplied between the dielectric and the object to be processed, and a voltage is applied to the HOT electrode to generate an electric discharge between the HOT electrode and the object to be processed. The processing gas turned into plasma by electric discharge is brought into contact with the surface of the object to be processed, and the surface is plasma-treated.

Japanese Unexamined Patent Publication No. 2007-115616

However, in Patent Document 1, for example, due to variations in the height position of the surface of the object to be treated, the distance between the dielectric and the surface may not be constant, and stable plasma discharge may not be possible. ..

In view of the above situation, it is an object of the present invention to provide a plasma processing apparatus capable of stabilizing plasma discharge.

An exemplary plasma processing apparatus of the present invention includes a stage and a counter electrode portion arranged so as to face the object to be processed placed on the stage, and the counter electrode portion and the object to be processed are provided with each other. A plasma processing device that processes the object to be processed by the plasma generated between the objects, and the distance between the object to be processed and the counter electrode portion by relatively moving the stage and the counter electrode portion. It is provided with a moving mechanism for adjusting the movement mechanism and a control unit for controlling the moving mechanism according to a current generated by applying a voltage to the counter electrode portion by the power supply unit.

According to the exemplary plasma processing apparatus of the present invention, plasma discharge can be stabilized.

FIG. 1 is a diagram schematically showing the overall configuration of the plasma processing apparatus according to the first embodiment. FIG. 2 is a diagram showing an example of the relationship between the distance between the object to be processed and the counter electrode portion and the current value of the discharge current. FIG. 3 is a diagram showing an example of waveforms of an output voltage applied to a voltage application electrode in the plasma processing apparatus according to the first embodiment and a detection current signal detected by an ammeter. FIG. 4 is a diagram showing an example of waveforms of an output voltage applied to a voltage application electrode in a plasma processing apparatus according to a comparative example and a detection current signal detected by an ammeter. FIG. 5 is a top view showing a first example of the processing process of the object to be processed. FIG. 6 is a top view showing a second example of the processing process of the object to be processed. FIG. 7 is a top view showing an example of an actuator that moves the counter electrode portion. FIG. 8 is a diagram schematically showing a partial configuration of the plasma processing apparatus according to the second embodiment. FIG. 9 is a diagram schematically showing a partial configuration of the plasma processing apparatus according to the third embodiment.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the drawings.

<1. First Embodiment>
FIG. 1 is a diagram schematically showing the overall configuration of the plasma processing apparatus 15 according to the first embodiment.

The plasma processing apparatus 15 shown in FIG. 1 is an apparatus that generates plasma under atmospheric pressure and performs plasma processing on a metal object 1 to be processed. The plasma processing device 15 includes a counter electrode unit 2, an actuator 3, a power supply unit 4, a stage 5, an insulating unit 6, an actuator 7, a signal processing box 8, a displacement meter 9, and an actuator 10. Have. The counter electrode portion 2 has a voltage application electrode 2A and a dielectric portion 3. The counter electrode portion 2 is lighter and smaller than the object to be processed 1.

The power supply unit 4 has a first output end 41 and a second output end 42. The power supply unit 4 applies a high-frequency, high-voltage output voltage from the first output terminal 41 to the voltage application electrode 2A. The output voltage is an AC voltage.

The frequency of the voltage applied by the power supply unit 4 is, for example, 1 kHz to 100 kHz. The waveform of the voltage applied by the power supply unit 4 is preferably a pulse waveform, but may be a sine wave, a square wave, or the like, and a known waveform used in atmospheric pressure plasma discharge may be used. The voltage applied by the power supply unit 4 is, for example, 5 kVpp to 20 kVpp, and is appropriately set by a gap between the voltage application electrode 2A and the object 1 to be processed.

The dielectric portion 2B is arranged on the lower surface of the voltage application electrode 2A. As the material of the dielectric portion 3, a ceramic material such as alumina or zirconia, a free-cutting ceramic, or the like is preferably used.

The object 1 to be processed is arranged below the dielectric portion 2B and faces the dielectric portion 2B in the vertical direction. That is, the counter electrode portion 2 is arranged so as to face the object to be processed 1. The object 1 to be processed is a metal member.

A gap S1 is formed between the dielectric portion 2B and the object to be processed 1. The surface to be processed 1 of the object to be processed 1 is plasma-processed by the plasma P generated in the gap S1. The object to be processed 1 functions as an electrode, and the object to be processed 1 is directly processed by the plasma P generated between the dielectric portion 2B and the object to be processed 1. The processing gas may be supplied to the gap S1 by the gas supply means. The treatment gas is not limited to a gas type such as nitrogen or a mixed gas of nitrogen and air.

In the stage 5, the object to be processed 1 is placed and the object to be processed 1 is held. The stage 5 is made of metal.

That is, the plasma processing apparatus 15 includes a stage 5 and a counter electrode portion 2 arranged to face the object to be processed 1 placed on the stage 5, and the counter electrode portion 2 and the object to be processed 1 are provided with each other. The object 1 to be processed is processed by the plasma P generated between them.

The insulating portion 6 is arranged between the stage 5 and the actuator 7. The insulating portion 6 is made of, for example, a sheet-shaped insulating material. The insulating portion 6 electrically insulates the stage 5 and the actuator 7.

The actuator 7 conveys the object 1 to be processed together with the stage 5 and the insulating portion 6 in the conveying direction. In FIG. 1, the transport direction is shown as the Y-axis direction, the vertical direction is shown as the Z-axis direction, and the directions orthogonal to the Y-axis direction and the Z-axis direction are shown as the X direction. The same applies to drawings other than FIG. 1.

The stage 5 is connected to the second output end 42 via the first line L1. The signal processing box 8 houses the ammeter 81 and the control unit 82. The ammeter 81 is arranged in the middle of the first line L1.

In the plasma processing apparatus 15 that plasma-treats the object 1 to be processed under atmospheric pressure, the dielectric portion 2B is arranged on the voltage application electrode 2A, and the power supply unit 4 applies a high voltage / high frequency output voltage to the voltage application electrode 2A. By applying the voltage, a dielectric barrier discharge is generated in the gap S1. The electric charge carried by the discharge current accumulates in the dielectric portion 2B, so that the voltage applied to the gap S1 decreases, and the discharge is automatically stopped. As a result, the dielectric barrier discharge becomes a pulse-shaped discharge, and a stable atmospheric pressure non-thermal equilibrium plasma can be obtained.

The discharge current generated by the dielectric barrier discharge flows through the first line L1 via the object to be processed 1 and the stage 5. The ammeter 81 detects the discharge current.

That is, the plasma processing device 15 includes an ammeter 81 arranged in the current path L1 connected to the stage 5. The ammeter 81 detects the current generated by applying a voltage to the counter electrode unit 2 by the power supply unit 4. As a result, the ammeter 81 can be arranged on the reference potential side, so that the configuration of the ammeter 81 can be simplified. It is also possible to arrange the ammeter in the current path between the first output terminal 41 and the voltage application electrode 2A.

The actuator 7 is grounded by the second line L2. The first line L1 is not connected to the second line L2 that grounds the actuator 7.

The ammeter 81 is composed of, for example, a resistance that converts a current into a voltage. The ammeter 81 outputs a detected current signal to the control unit 82 as a current detection result. The control unit 82 controls each unit of the plasma processing device 15, and is configured by, for example, a processor or the like.

The actuator 3 moves the counter electrode portion 2 in the X-axis direction and the Z-axis direction. The actuator 3 can adjust the distance between the counter electrode portion 2 and the object to be processed 1 by moving the counter electrode portion 2 in the Z-axis direction. That is, the plasma processing device 15 includes a moving mechanism (actuator) 3 that adjusts the distance between the object to be processed 1 and the facing electrode portion 2 by relatively moving the stage 5 and the facing electrode portion 2. The movement control of the counter electrode portion 2 using the actuator 3 will be described later.

The displacement meter 9 measures the height of the surface to be processed 11 of the object to be processed 1. As the displacement meter 9, for example, an optical sensor, an ultrasonic sensor, or the like can be used. The actuator 10 moves the displacement meter 9 in the X direction. The movement control of the displacement meter 9 using the actuator 10 will be described later.

<2. Gap control between the object to be processed and the counter electrode
When the current value of the generated discharge current was measured while changing the distance between the object to be processed 1 and the counter electrode portion 2, the relationship between the distance GP and the current value Id shown in FIG. 2 was obtained. .. The current value Id indicates the peak to peak value of the discharge current.

As shown in FIG. 2, for the distance GP in a predetermined range, the longer the distance GP, the larger the current value Id. It is considered that this is because the amount of the processing gas existing between the object to be processed 1 and the counter electrode portion 2 increases as the distance GP becomes longer. However, in the range in which the distance GP becomes longer than the predetermined range, there is a range in which the current value Id decreases as the distance GP becomes longer. This is because if the distance GP becomes too long, discharge is less likely to occur.

As shown in FIG. 2, the current value Id is I0 with respect to the predetermined value G0 of the distance GP, and when a current value I1 higher than I0 is detected, the distance from G1 to G0, which is the distance GP with respect to I1, is calculated. When the current value I2 lower than I0 is detected, the distance GP can be controlled to a predetermined value G0 by expanding the distance from G2, which is the distance GP to I2, to G0.

Therefore, in the plasma processing device 15, for example, the control unit 82 stores the relationship shown in FIG. 2, and the control unit 82 has a counter electrode unit by the actuator 3 based on the above relationship with the current value detected by the ammeter 81. Controls the movement of 2 in the Z-axis direction. Thereby, the distance between the object to be processed 1 and the counter electrode portion 2 can be controlled to a predetermined value. The control unit 82 can acquire the current value by acquiring the peak to peak value of the detected current signal output from the ammeter 81.

That is, the plasma processing device 15 includes a control unit 82 that controls the moving mechanism (actuator) 3 according to the current generated by applying a voltage to the counter electrode unit 2 by the power supply unit 4. As a result, the distance between the object to be processed 1 and the counter electrode portion 2 can be adjusted to a predetermined value, so that the plasma discharge can be stabilized.

Further, the plasma processing apparatus 15 processes the object to be processed 1 by plasma discharge at atmospheric pressure. In the atmospheric pressure plasma treatment, since the distance between the object to be processed 1 and the counter electrode portion 2 is short, it is of great significance to be able to control the distance. For example, the predetermined value, which is the control target value of the distance between the object to be processed 1 and the counter electrode portion 2, is set to a value of 1 mm or less.

Further, since the stage 5 and the counter electrode portion 2 need only be relatively movable, an actuator for moving the stage 5 in the Z-axis direction may be provided instead of the actuator 3. However, it is desirable to provide an actuator 3 that moves the counter electrode portion 2 in the Z-axis direction. That is, the moving mechanism (actuator) 3 moves the counter electrode portion 2. As a result, the counter electrode portion 2, which is lighter than the object to be processed 1, is moved, so that the configuration of the moving mechanism can be simplified.

<3. Regarding the insulation part>
Here, FIG. 3 is a diagram showing an example of waveforms of the output voltage V applied to the voltage application electrode 2A in the plasma processing apparatus 15 according to the present embodiment and the detection current signal I detected by the ammeter 81. Note that FIG. 3 shows a case where a sinusoidal output voltage V is applied as an example.

As shown in FIG. 3, a pulsed discharge current is generated near the timing at which the polarity of the output voltage V is switched. For example, in the region A of FIG. 3, a discharge current is generated. In FIG. 3, the influence of noise on the detected current signal I is small, and the peak to peak value of the discharge current is large and clear. It is considered that this is because the inflow of noise from the actuator 7 into the ammeter 81 can be suppressed by the insulating portion 6, and the outflow of the discharge current flowing through the object 1 to the actuator 7 can be suppressed by the insulating portion 6. This makes it possible to improve the S / N ratio of the discharge current detected by the ammeter 81.

That is, the plasma processing device 15 is arranged in the actuator 7 for moving the stage 5, the insulating portion 6 arranged between the stage 5 and the actuator 7, and the current path L1 connected to the stage 5 to detect the current. The ammeter 81 is provided.

As a result, the inflow of noise from the actuator 7 into the ammeter 81 can be suppressed by the insulating portion 6, and the outflow of the discharge current flowing through the stage 5 to the actuator 7 can be suppressed by the insulating portion 6. Therefore, the S / N ratio of the discharge current detected by the ammeter 81 can be improved. Therefore, the distance between the object to be processed 1 and the counter electrode portion 2 can be appropriately controlled.

As a reference, FIG. 4 is a diagram showing an example of waveforms of the output voltage V and the detection current signal I when the actuator 7 and the stage 5 are not isolated. In this case, the influence of noise on the detected current signal I becomes large, and the discharge current is unclear because the peak to peak value becomes small as shown in the B region, for example. As a result, the S / N ratio of the discharge current is deteriorated.

The noise from the actuator 7 includes not only the noise generated when the actuator 7 is driven but also the noise based on the electromagnetic wave received by the actuator 7 from the power supply unit 4. The plasma processing apparatus 15 of the present embodiment processes the object 1 to be processed by plasma discharge at atmospheric pressure. In plasma discharge at atmospheric pressure, a high voltage / high voltage output voltage is applied to the voltage application electrode 2A by the power supply unit 4, so that noise is likely to be generated by the electromagnetic wave received by the actuator 7 from the power supply unit 4, but the insulation unit 6 Therefore, the inflow of noise into the current meter 81 can be suppressed.

Further, since the actuator 7 is grounded by the second line L2, the noise generated by the actuator 7 is absorbed by the grounding, and the inflow of the noise into the ammeter 81 can be further suppressed.

Further, since the first line L1 is not connected to the second line L2 that grounds the actuator 7, it is possible to suppress the noise from the ground from flowing into the ammeter 81.

Further, since the ammeter 81 and the stage 5 are connected by the third line L3 which is a part of the first line L1, it is not necessary to connect the ammeter 81 to the object 1 to be processed by the line, and the processing process can be performed. It can be simplified.

<4. Processing process of the object to be processed>
Next, an example of the processing step of the object to be processed 1 will be described. FIG. 5 is a top view showing a first example of the processing process of the object to be processed 1.

First, in the step ST1, the object to be processed 1 is set in the stage 5. Here, the object 1 to be processed is, for example, a member having a cylindrical shape, and has an annular surface as the surface to be processed 11 which is the upper surface.

The object to be processed 1 placed on the stage 5 is conveyed to one side in the Y-axis direction by the actuator 7. Then, in step ST2, the height of the surface to be processed of the object to be processed 1 is measured by the displacement meter 9. At this time, the control unit 82 controls the movement of the object 1 to be processed by the actuator 7 in the Y-axis direction, and also controls the movement of the displacement meter 9 by the actuator 10 in the X-axis direction. This makes it possible to measure the height of the annular surface, which is the surface to be processed 11, in the entire circumferential direction.

In the processing step ST2, the actuator 10 may move the displacement meter 9 in the X and Y directions, and the actuator 7 may move the stage 5 in the X and Y directions.

Next, the object 1 to be processed is conveyed to one side in the Y-axis direction by the actuator 7. Then, in the step ST3, the surface to be processed of the object to be processed 1 is plasma-treated by the plasma generated by the voltage application electrode 2A to which the voltage is applied. Specifically, the control unit 82 controls the movement of the object 1 to be processed by the actuator 7 in the Y-axis direction, and also controls the movement of the counter electrode unit 2 by the actuator 3 in the X-axis direction.

At this time, the control unit 82 sets the distance between the surface to be processed 11 of the object to be processed 1 and the counter electrode unit 2 to the predetermined value based on the measurement result by the displacement meter 9 in the step ST2, and the actuator 3 Feed forward control is performed to control the movement of the counter electrode portion 2 in the Z-axis direction. Further, the control unit 82 determines the distance between the surface to be processed 11 and the counter electrode unit 2 based on the relationship between the current value detected by the ammeter 81 and the stored distance and the current value. In order to set the value, the feedback control for controlling the movement of the counter electrode portion 2 in the Z-axis direction by the actuator 3 is performed in combination with the feedforward control. As a result, the distance between the surface to be processed 11 and the counter electrode portion 2 is controlled to be constant in the circumferential direction of the torus surface.

As shown in FIG. 7, in the processing step ST3, the actuator 3 may move the counter electrode portion 2 in the X direction and the Y direction. Alternatively, the actuator 7 may move the stage 5 in the X and Y directions.

That is, the plasma processing device 15 is an actuator that moves at least one of the stage 5 and the counter electrode portion 2 in a predetermined direction (Y direction, X direction) perpendicular to the moving direction (Z direction) by the moving mechanism (actuator) 3. 7 and 3 are provided. As a result, plasma treatment can be stably performed over a wide range at a desired portion of the object to be treated 1.

Further, the plasma processing apparatus 15 makes at least one of the displacement meter 9 for measuring the height of the surface to be processed 11 of the object to be processed 1 and the stage 5 and the displacement meter 9 in the predetermined directions (Y direction, X direction). The moving actuators 7 and 10 are provided, and the control unit 82 controls the moving mechanism (actuator) 3 based on the measurement result of the displacement meter 9 and the current. As a result, the distance between the object to be processed 1 and the counter electrode portion 2 can be accurately adjusted over the entire desired portion of the object to be processed 1.

Then, the object to be processed 1 is conveyed to one side in the Y-axis direction by the actuator 7, and the object to be processed 1 is removed from the stage 5 and carried out in the step ST4.

FIG. 6 is a top view showing a second example of the processing step of the object to be processed 1. The difference between the processing process shown in FIG. 6 and FIG. 5 is the processes ST2 and ST3.

In step ST2, the displacement meter 9 does not move, and the height of one point on the surface to be processed 11 is measured by the displacement meter 9. Therefore, an actuator for moving the displacement meter 9 is unnecessary.

Then, in the step ST3, the control unit 82 controls the movement of the stage 5 in the Y direction by the actuator 7 and also controls the movement of the counter electrode unit 2 in the X direction by the actuator 3, so that the displacement meter 9 is controlled in the step ST2. The counter electrode portion 2 is positioned at the location where the measurement is performed. At this time, the control unit 82 moves the counter electrode unit 2 in the Z-axis direction by the actuator 3 so that the distance between the surface to be processed 11 and the counter electrode unit 2 is set to a predetermined value based on the measurement result in the step ST2. To control. As a result, the counter electrode portion 2 is controlled to the initial position.

After that, the control unit 82 controls the movement of the stage 5 in the Y direction by the actuator 7 and controls the movement of the counter electrode unit 2 in the X direction by the actuator 3, so that the counter electrode unit 2 is an annular surface. It is aligned with the surface to be processed 11 in the circumferential direction. At this time, the control unit 82 controls the movement of the counter electrode unit 2 by the actuator 3 in the Z-axis direction based on the relationship between the current value detected by the ammeter 81 and the stored distance and the current value. The distance between the surface to be processed 11 and the counter electrode portion 2 is adjusted to the above-mentioned predetermined value. As a result, the distance between the surface to be processed 11 and the counter electrode portion 2 is controlled to be constant in the circumferential direction of the torus surface.

That is, the control unit 82 controls the moving mechanism (actuator) 3 based on the measurement result at one location by the displacement meter 9 and the current. As a result, it is not necessary to have the displacement meter 9 measure the entire desired portion of the object to be processed 1, and the configuration can be simplified.

<5. Regarding the relationship between the distance between the object to be processed and the counter electrode and the current value>
The relationship between the distance between the object to be processed 1 and the counter electrode portion 2 and the current value, as shown in FIG. 2 as an example, is, for example, the same product, a product manufactured from the same material, a product of the same lot, or the like. The control unit 82 may store each object to be processed classified in 1.

That is, the control unit 82 stores the relationship between the distance between the object to be processed 1 and the counter electrode unit 2 and the current value for each object to be processed classified according to a predetermined standard. Thereby, even if the characteristics are different for each object to be processed classified according to a predetermined standard, the distance can be appropriately controlled for each object to be processed.

In addition, the relationship between the distance and the current value may change due to aging. Therefore, the following processing may be performed at a predetermined timing such as every time a predetermined period elapses.

For example, the height of the object to be processed 1 is measured at a predetermined position on the surface to be processed 11 by using a displacement meter 9. Then, the control unit 82 controls the movement of the counter electrode unit 2 by the actuator 3 in the Z-axis direction, and controls the distance at the predetermined location to a predetermined sample value. In that state, the control unit 82 acquires the current value detected by the ammeter 81 when the voltage is applied to the voltage application electrode 2A. Then, the control unit 82 corrects the relationship between the distance and the current value based on the sample value of the distance and the acquired current value. The sample value may be one or a plurality.

Further, the control unit 82 searches for the position of the counter electrode unit 2 in which the current value detected by the ammeter 81 becomes a predetermined sample value while moving the counter electrode unit 2 in the Z-axis direction by the actuator 3. The above distance may be acquired based on the position of the counter electrode portion 2 and the height measured by the displacement meter 9. This also makes it possible to correct the relationship between the distance and the current value.

That is, the control unit 82 corrects the relationship between the stored distance between the object to be processed 1 and the counter electrode unit 2 and the current value based on the current detection result. Thereby, the distance between the object to be processed 1 and the counter electrode portion 2 can be appropriately controlled according to the secular variation.

<6. 2nd Embodiment>
FIG. 8 is a diagram schematically showing a partial configuration of the plasma processing apparatus 151 according to the second embodiment.

The difference between the plasma processing apparatus 151 and the plasma processing apparatus 15 according to the first embodiment is that the fourth line L4 is connected to the stage 5 and the ammeter 81 is arranged in the middle, and the fifth line L4 is connected to the actuator 7. The line L5 and the sixth line L6 connected to the second output end 42 are both grounded.

<7. Third Embodiment>
FIG. 9 is a diagram schematically showing a partial configuration of the plasma processing apparatus 152 according to the third embodiment.

The difference from the plasma processing device 15 according to the first embodiment of the plasma processing device 152 is that the actuator 7 is not grounded and is in a floating state. When the noise generated from the actuator 7 is small, the noise flowing into the ammeter 81 can be sufficiently suppressed by the insulating portion 6 even in the configuration of the plasma processing device 152.

<8. Others>
Although the embodiments of the present invention have been described above, the embodiments can be modified in various ways within the scope of the gist of the present invention.

For example, although the insulating portion 6 is provided in the above-described embodiment, if the noise generated from the actuator 7 is small, the insulating portion 6 may not be provided and the actuator 7 and the stage 5 may be short-circuited.

The present invention can be used for various plasma treatments on an object to be treated.

1 ... Object to be processed, 11 ... Surface to be processed, 2 ... Opposite electrode part, 2A ... Voltage application electrode, 2B ... Dielectric part, 3 ... Actuator, 4 ... Power supply unit, 41 ... 1st output end, 42 ... 2nd output end, 5 ... stage, 6 ... insulation part, 7 ... actuator, 8 ... signal processing box, 81. .. Current meter, 82 ... Control unit, 9 ... Displacement meter, 10 ... Actuator, 15 ... Plasma processing device, 151, 152 ... Plasma processing device, L1 ... First line , L2 ... 2nd line, L3 ... 3rd line, L4 ... 4th line, L5 ... 5th line, L6 ... 6th line

Claims (8)

A stage, a counter electrode portion arranged to face the object to be processed placed on the stage, and a counter electrode portion.
A plasma processing apparatus that processes the object to be processed by the plasma generated between the counter electrode portion and the object to be processed.
A moving mechanism that adjusts the distance between the object to be processed and the counter electrode portion by relatively moving the stage and the counter electrode portion.
A control unit that controls the movement mechanism according to a current generated by applying a voltage to the counter electrode unit by the power supply unit.
A first actuator that moves at least one of the stage and the counter electrode portion in a predetermined direction perpendicular to the moving direction by the moving mechanism.
A displacement meter that measures the height of the surface to be processed of the object to be processed, and
A second actuator for moving at least one of the stage and the displacement meter in the predetermined direction is provided.
The control unit is a plasma processing device that controls the moving mechanism based on the measurement result of the displacement meter and the current . A stage, a counter electrode portion arranged to face the object to be processed placed on the stage, and a counter electrode portion.
A plasma processing apparatus that processes the object to be processed by the plasma generated between the counter electrode portion and the object to be processed.
A moving mechanism that adjusts the distance between the object to be processed and the counter electrode portion by relatively moving the stage and the counter electrode portion.
A control unit that controls the movement mechanism according to a current generated by applying a voltage to the counter electrode unit by the power supply unit.
A first actuator that moves at least one of the stage and the counter electrode portion in a predetermined direction perpendicular to the moving direction by the moving mechanism.
A displacement meter that measures the height of the surface to be processed of the object to be processed, and
Equipped with
The control unit is a plasma processing device that controls the moving mechanism based on the measurement result of one place by the displacement meter and the current. The plasma processing apparatus according to claim 1 or 2 , wherein the object to be processed is processed by plasma discharge at atmospheric pressure. The plasma processing apparatus according to any one of claims 1 to 3 , further comprising an ammeter arranged in a current path connected to the stage and detecting the current. The plasma processing apparatus according to any one of claims 1 to 4 , wherein the moving mechanism moves the counter electrode portion. The control unit determines the relationship between the distance between the object to be processed and the counter electrode unit and the current value.
The plasma processing apparatus according to any one of claims 1 to 5 , which stores each of the objects to be processed classified according to a predetermined standard. The control unit corrects the relationship between the stored distance between the object to be processed and the counter electrode unit and the current value based on the detection result of the current, according to claims 1 to 6 . The plasma processing apparatus according to any one of the following items. The third actuator that moves the stage and
An insulating portion arranged between the stage and the third actuator,
The plasma processing apparatus according to any one of claims 1 to 7 , further comprising an ammeter arranged in a current path connected to the stage and detecting the current.

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