JP4250208B2 - Non-alkali glass and liquid crystal display panel for display substrates - Google Patents

Non-alkali glass and liquid crystal display panel for display substrates Download PDF

Info

Publication number
JP4250208B2
JP4250208B2 JP31101995A JP31101995A JP4250208B2 JP 4250208 B2 JP4250208 B2 JP 4250208B2 JP 31101995 A JP31101995 A JP 31101995A JP 31101995 A JP31101995 A JP 31101995A JP 4250208 B2 JP4250208 B2 JP 4250208B2
Authority
JP
Japan
Prior art keywords
glass
alkali
mgo
bao
display substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP31101995A
Other languages
Japanese (ja)
Other versions
JPH09169538A (en
Inventor
学 西沢
泰昌 中尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP31101995A priority Critical patent/JP4250208B2/en
Publication of JPH09169538A publication Critical patent/JPH09169538A/en
Application granted granted Critical
Publication of JP4250208B2 publication Critical patent/JP4250208B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Glass Compositions (AREA)

Description

【0001】
【発明の属する技術分野】
本発明は、各種ディスプレイやフォトマスク用基板ガラスとして好適な、アルカリ金属酸化物を実質上含有せずフロート成形可能な、無アルカリガラス及びそれを用いた液晶ディスプレイパネルに関する。
【0002】
【従来の技術】
従来、各種ディスプレイ用基板ガラス、特に表面に金属又は酸化物薄膜等を形成させるものでは、以下の特性が要求される。
【0003】
(1)アルカリ金属酸化物を含有すると、アルカリ金属イオンが薄膜中に拡散して、膜特性を劣化させるため、実質的にアルカリ金属イオンを含まないこと。
(2)薄膜形成工程で高温にさらされるので、ガラスの変形及びガラスの構造安定化に伴う収縮を最小限に抑えるため、高い歪点を有すること。
(3)半導体形成に用いられる各種薬品に対して充分な化学耐久性を有すること。特にSiOx やSiNx のエッチングのためのフッ酸、フッ化アンモニウム等を主成分とするバッファードフッ酸(BHF)に対して耐久性があること。
(4)内部及び表面に欠点(泡、脈理、インクルージョン、ピット、キズ、等)をもたないこと。
【0004】
従来、各種ディスプレイやフォトマスク用基板ガラスとしてコーニングコード7059ガラスが広く用いられている。しかし、このガラスにはデイスプレイ用として以下に示す不充分な点があった。
【0005】
(1)歪点が593℃と低いので、ディスプレイ作製工程におけるガラスの収縮を低減するための前熱処理を、工程前に行わなければならない。
(2)金属電極や透明導電膜(ITOなど)のエッチングに用いる塩酸等への溶出量が多く、ディスプレイ作製工程中で溶出物が再結晶するなどして、ディスプレイ作製に困難がある。
【0006】
上記要求に加えて、近年、ディスプレイが大型化するに伴い次の2点が新たに要求されてきた。
【0007】
(1)上記コード7059ガラスの密度は2.76g/ccであり、さらに軽量化を図るため密度の小さいものが必要である。
(2)上記コード7059ガラスの熱膨張係数が46×10-7/℃であり、ディスプレイ作製時の昇降温速度を上げ、生産効率を上げるため、さらに熱膨張係数の小さいものが必要である。
【0008】
23 に関しては、特開平1−160844にはB23 を20〜23カチオン%含有するものが開示されているが、B23 量が多く歪点が充分には高くない。特開昭61−281041にはB23 を0.1〜4重量%、特開平4−175242にはB23 を0.1〜5モル%、特開平4−325435にはB23 を0〜3重量%、含有するものが開示されているが、B23 量が少なくBHFに対する耐久性が充分ではない。
【0009】
BaOに関しては、特開平4−325434にはBaOを10〜20重量%、特開昭63−74935にはBaOを10〜22重量%、特開昭59−169953にはBaOを15〜40重量%、含有するものが開示されているが、BaOが多く熱膨張係数が大きい。
【0010】
MgOに関しては、特開昭61−132536にはMgOを6.5〜12重量%、特開昭59−116147にはMgOを5〜15重量%、特開昭60−71540にはMgOを5〜17重量%、特開昭60−42246にはMgOを10〜25モル%、含有するものが開示されているが、MgOを多く含有したガラスは分相がおきやすくなる。
【0011】
CaOに関しては、特開昭63−176332にはCaOを11〜25重量%、特開昭58−32038にはCaOを7〜20モル%、特開平2−133334にはCaOを8〜15重量%、特開平3−174336にはCaOを7〜12重量%、特開平6−40739にはCaOを10〜12重量%、特開平5−201744にはCaOを18カチオン%以上、含有するものが開示されているが、CaOを多量に含有するため熱膨張係数が大きくなる傾向がある。
【0012】
Al23 に関しては、特開昭61−236631にはAl23 を22.5〜35重量%、含有するものが開示されているが、Al23 量が多く塩酸等への薬品への溶出が多い。
【0013】
25 に関しては、特開昭61−261232、特開昭63−11543、にはP25 を含有するものが開示されているが、薄膜の半導体特性を悪化させ好ましくない。
【0014】
【発明が解決しようとする課題】
また、640℃以上で、熱膨張係数が30〜45×10-7/℃、密度2.70g/cc以下のガラスは、特開平6−263473に開示されている。しかし、このガラスを常法に従って、バッチ調合、溶解、成形して作成したガラスを高精細のポリシリコンタイプのTFTに適用すると、充分に特性の良いトランジスタが得られない場合がある。
【0015】
本発明の目的は、上記欠点を解決するとともに、歪点が640℃以上で、熱膨張係数、密度が小さく、BHFにより白濁をおこさず、塩酸等の薬品への耐久性も優れ、熔解・成形が容易で、フロート成形が可能な無アルカリガラスを提供することにある。
【0016】
【課題を解決するための手段】
本発明は、モル%表示で実質的に、SiO2 :60〜72%、Al23 :9〜14%、B23 :5〜10%未満、MgO:1〜5%、CaO:0〜1.5%、SrO:1〜7%、BaO:1〜5%、MgO+CaO+SrO+BaO:7〜18%からなり、リンを実質的に含有せず、歪点が640℃以上、密度が2.70g/cc以下であるディスプレイ基板用無アルカリガラスである。
【0017】
【発明の実施の形態】
本発明の無アリカリガラスはアルカリ金属酸化物(例えばNa2 O、K2 Oなど)を実質的に含有しないものである。具体的にはアルカリ金属酸化物が総量で0.5重量%以下、より好ましくは0.2重量%以下とされる。
【0018】
次に上記の通り各成分の組成範囲を限定した理由について述べる。
【0019】
SiO2 はその含有量が60%モル未満では、歪点が充分に上げられないとともに、化学耐久性が悪化し、熱膨張係数が増大する。72モル%超では熔解性が低下し、失透温度が上昇する。より好ましい範囲は66〜70モル%である。
【0020】
Al23 はガラスの分相性を抑制し、熱膨張係数を下げ、歪点を上げる
【0021】
23 はBHFによる白濁発生を防止し、高温での粘性を高くさせずに熱膨張係数と密度の低下を達成できる。その含有量が5モル%未満ではBHF性が悪化し、10モル%以上では耐酸性が悪くなる。より好ましい範囲は6〜9モル%である。
【0022】
MgOは必須成分ではないが、アルカリ土類金属酸化物のうちでは熱膨張係数を低くし、かつ歪点が低下しないため含有することができる。その含有量が5モル%超ではBHFによる白濁やガラスの分相が生じやすくなる。本発明における範囲は1〜5モル%である。
【0023】
CaOは必須成分ではないが含有することによりガラスの熔解性を向上させうる。その含有量が2.5モル%超では高精細ポリシリコンTFTの特性を悪化させるおそれがある。
【0024】
近年、液晶表示装置としてすでに商品化されているアモルファスシリコンタイプのTFTを使用したものに対して、ポリシリコンタイプのTFTが提案され、使用されてきている。ポリシリコンタイプのTFTは、(1)トランジスタの易動度を上げうるので、1画素あたりの制御時間が短くない、LCDの高精細化が可能になる、(2)画面周辺に駆動用ICを実装することが可能になる、などの利点がある反面、作製工程での強い熱処理(例えば、500〜600℃×数時間)が必要になる。このような高温では、ガラス中の不純物がTFTに拡散して、リーク電流が増大、TFT特性を悪化させ、高精細のTFT作製を難しくするおそれがある。
【0025】
このような不純物でもっとも問題視されるのは、CaOの原料として使用される石灰石中のリンである。したがって、本発明の無アルカリガラス中に、リンは実質的に含まれないことが望ましい。ガラス中のリンを減らすためには、リン不純物の少ない高純度原料を用いる方法も考えられるが、コスト的に不利がある。
【0026】
本発明では、CaOの含有量を1.5モル%以下にしたので、TFT特性を悪化させることがなく、液晶表示パネル用として優れた特性のガラス基板が得られる。CaOの範囲は1.5モル%以下であり、特に好ましくは、実質的に含有されない。
【0027】
SrOはガラスの分相を抑制し、BHFによる白濁に対し比較的有用な成分であるため、1モル%以上含有される。その含有量がモル%超では熱膨張係数が増大する。より好ましい範囲は2〜モル%である。
【0028】
BaOはガラスの分相を抑制し、熔解性を向上させ、失透温度を抑制する効果があるため本発明では必須とする。その含有量が5モル%超では熱膨張係数が増大し、耐酸性等の化学耐久性も劣化する。
【0029】
MgO+CaO+SrO+BaOは、その合量が7モル%未満では熔解を困難にさせる。18モル%超では密度が大きくなる。より好ましい範囲は9〜16モル%である。
【0030】
本発明では、リンはTFT特性を悪化させるおそれがあるため、実質的に含有しない。
【0031】
本発明のガラスは上記成分以外にガラスの熔解性、清澄性、成形性を改善するため、ZnO、SO3 、F、Clを総量で5モル%以下添加できる。
【0032】
また、PbO、As23 及びSb23 を含むとガラスカレットの処理に工数を多く必要とするので不純物等として不可避的に混入すものを除き含有しないことが好ましい。
【0033】
かくして、本発明のより好ましいガラスの組成は、モル%表示で実質的に、SiO2 :66〜70%、Al23 :9〜14%、B23 :6〜9%、MgO:1〜5%、SrO:2〜%、BaO:1〜5%、MgO+SrO+BaO:9〜16%からなり、リン及びCaOを実質的に含有しないものである。
【0034】
本発明のガラスは、歪点が640℃以上である好ましくは650℃以上である。また、熱膨張係数が30×10-7/℃〜45×10-7/℃であることが好ましく、より好ましくは30×10-7/℃〜40×10-7/℃である。さらに、密度2.70g/cc以下である好ましくは2.65g/cc以下である。
【0035】
本発明のガラスは、例えば次のような方法で製造できる。すなわち、通常使用される各成分の原料を目標成分になるように調合し、これを熔解炉に連続的に投入し、1500〜1600℃に加熱して熔融する。この熔融ガラスをフロート法により所定の板厚に成形し、徐冷後切断する。
【0036】
【実施例】
各成分の原料を目標組成になるように調合し、白金坩堝を用いて1500〜1600℃の温度で熔解した。熔解にあたっては、白金スターラを用い撹拌しガラスの均質化を行った。次いで熔解ガラスを流し出し、板状に成形後徐冷した。
【0037】
表1〜2には、こうして得られたガラス組成と熱膨張係数、高温粘度、失透温度、歪点、密度、耐酸性、耐BHF性、リーク電流(TFT特性)を示す。例1、例5、例7は実施例、例2〜4、例6、例8〜13は比較例である。
【0038】
熱膨張係数は単位:10-7/℃で示し、高温粘度は粘度が102 、104 ポイズとなる温度(単位:℃)で示し、失透温度は単位:℃で示し、密度は単位:g/ccで示した。歪点(単位:℃)はJIS R3103に従って測定した。
【0039】
耐酸性は、90℃の0.1規定のHCl中に20時間浸漬後の単位面積あたりの重量減少量(単位:mg/cm2 )で示した。耐酸性は0.3mg/cm2 以下、特には0.2mg/cm2 以下、であることが好ましい。
【0040】
耐BHF性は、NH4 F/HF混液(40重量%NH4 F水溶液と50重量%HF水溶液とを体積比で9:1に混合した液)中に25℃で20分浸漬後の単位面積あたりの重量減少量(単位:mg/cm2 )で示した。耐BHF性は0.7mg/cm2 以下、特には0.6mg/cm2 以下、であることが好ましい。
【0041】
TFT特性は、例1、2、10〜12について、測定した。すなわち、電極長さ10μmのポリシリコンタイプTFTをガラス基板上に作成し、ゲート電圧を−5V、ソース電圧を0V、ドレイン電圧を+10Vとしたときのリーク電流(単位:pA)を測定した。リーク電流は数pA程度以下であることが好ましい。
【0042】
例1〜10のガラスは、熱膨張係数は30〜40×10-7/℃の低い値を示し、歪点は630℃以上と高い値を示し、高温での熱処理に充分耐えられる。密度も2.70g/cc未満で従来のコーニングコード7059ガラスの2.76g/ccより小さい。化学的特性に関してもBHFにより白濁を生じにくく、耐酸性にも優れる。熔解の目安となる102 ポイズに相当する温度も比較的低く熔解が容易であり、成形性の目安となる104 ポイズに相当する温度と失透温度の関係も良好で、成形時に失透が生成するなどのトラブルがないと考えられる。
【0043】
さらに、TFT特性については、リーク電流が10pA未満であり、近年のTFTの高集積化にも充分に耐えられる。
【0044】
一方、例11〜13は、リーク電流が十数〜数十pA程度になっており、TFTが高集積化するに従って、問題となりうる。
【0045】
【表1】

Figure 0004250208
【0046】
【表2】
Figure 0004250208
【0047】
【発明の効果】
本発明によるガラスは、フロート法による成形が可能である。また、BHFによる白濁が生じにくく、耐酸性に優れ、耐熱性が高く、低い熱膨張係数を有するのでディスプレイ用基板、フォトマスク基板として適する。特に、TFT特性に悪影響を与えにくいので、、TFTタイプのディスプレイ基板等に好適である。
【0048】[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a non-alkali glass suitable for various displays and photomask substrate glass, which can be float-molded substantially without containing an alkali metal oxide, and a liquid crystal display panel using the same.
[0002]
[Prior art]
Conventionally, various display substrate glasses, particularly those in which a metal or oxide thin film is formed on the surface, require the following characteristics.
[0003]
(1) When an alkali metal oxide is contained, the alkali metal ions diffuse into the thin film and deteriorate the film characteristics.
(2) Since it is exposed to a high temperature in the thin film forming process, it has a high strain point in order to minimize the deformation caused by the glass deformation and the glass structural stabilization.
(3) Sufficient chemical durability against various chemicals used for semiconductor formation. In particular, it has durability against buffered hydrofluoric acid (BHF) mainly composed of hydrofluoric acid, ammonium fluoride, etc. for etching SiO x and SiN x .
(4) There are no defects (bubbles, striae, inclusions, pits, scratches, etc.) inside and on the surface.
[0004]
Conventionally, Corning Code 7059 glass has been widely used as substrate glass for various displays and photomasks. However, this glass has the following inadequate points for display.
[0005]
(1) Since the strain point is as low as 593 ° C., pre-heat treatment for reducing glass shrinkage in the display manufacturing process must be performed before the process.
(2) The amount of elution into hydrochloric acid or the like used for etching a metal electrode or transparent conductive film (ITO, etc.) is large, and the eluate recrystallizes during the display manufacturing process, which makes it difficult to manufacture the display.
[0006]
In addition to the above requirements, the following two points have been newly demanded in recent years as the display becomes larger.
[0007]
(1) The density of the cord 7059 glass is 2.76 g / cc, and a glass with a low density is required to further reduce the weight.
(2) The above-described code 7059 glass has a thermal expansion coefficient of 46 × 10 −7 / ° C., and in order to increase the temperature raising / lowering speed during production of the display and increase the production efficiency, a glass having a smaller thermal expansion coefficient is required.
[0008]
Regarding B 2 O 3 , JP-A-1-160844 discloses B 2 O 3 containing 20 to 23 cations, but the amount of B 2 O 3 is large and the strain point is not sufficiently high. JP 61-281041 to 0.1 to 4% by weight of B 2 O 3 is from 0.1 to 5 mol% of B 2 O 3 is in JP-A 4-175242, the Japanese Patent Laid-Open 4-325435 B 2 O 3 0 to 3% by weight, although those containing discloses, is not sufficient resistance to the amount of B 2 O 3 is less BHF.
[0009]
Regarding BaO, JP-A-4-325434 contains 10 to 20% by weight of BaO, JP-A-63-74935 uses 10 to 22% by weight of BaO, and JP-A-59-169953 uses 15 to 40% by weight of BaO. Although what is contained is disclosed, BaO is large and the thermal expansion coefficient is large.
[0010]
Regarding MgO, JP-A 61-132536 includes 6.5 to 12% by weight of MgO, JP-A 59-116147 includes 5 to 15% by weight of MgO, JP-A 60-71540 includes 5 to 5% of MgO. 17% by weight, and JP-A-60-42246 discloses a composition containing 10 to 25 mol% of MgO, but a glass containing a large amount of MgO tends to cause phase separation.
[0011]
Regarding CaO, JP-A-63-176332 has 11 to 25% by weight of CaO, JP-A-58-32038 has 7 to 20% by mole of CaO, and JP-A-2-133334 has 8 to 15% by weight of CaO. JP-A-3-174336 discloses 7-12% by weight of CaO, JP-A-6-40739 contains 10-12% by weight of CaO, and JP-A-5-201744 contains at least 18 cations of CaO. However, since a large amount of CaO is contained, the thermal expansion coefficient tends to increase.
[0012]
With respect to Al 2 O 3, chemicals to 22.5 to 35 wt% of Al 2 O 3 in JP 61-236631, although those containing discloses, Al 2 O 3 amount is large such as hydrochloric acid There are many elutions.
[0013]
Regarding P 2 O 5 , JP-A-61-261232 and JP-A-63-11543 disclose those containing P 2 O 5 , but this is not preferable because it deteriorates the semiconductor characteristics of the thin film.
[0014]
[Problems to be solved by the invention]
A glass having a thermal expansion coefficient of 30 to 45 × 10 −7 / ° C. and a density of 2.70 g / cc or less at 640 ° C. or higher is disclosed in JP-A-6-263473. However, when a glass prepared by batch-mixing, melting and molding this glass according to a conventional method is applied to a high-definition polysilicon type TFT, a transistor having sufficiently good characteristics may not be obtained.
[0015]
The object of the present invention is to solve the above-mentioned drawbacks, have a strain point of 640 ° C. or higher, a small thermal expansion coefficient and density, no white turbidity due to BHF, excellent durability to chemicals such as hydrochloric acid, melting and molding It is an object of the present invention to provide an alkali-free glass that is easy to float and can be float formed.
[0016]
[Means for Solving the Problems]
The present invention is essentially by mol%, SiO 2: 60~72%, Al 2 O 3: 9~14%, B 2 O 3: less than 5~10%, MgO: 1~5%, CaO: It is composed of 0 to 1.5%, SrO: 1 to 7%, BaO: 1 to 5%, MgO + CaO + SrO + BaO: 7 to 18%, does not substantially contain phosphorus, has a strain point of 640 ° C. or higher, and a density of 2. It is a non-alkali glass for display substrates that is 70 g / cc or less.
[0017]
DETAILED DESCRIPTION OF THE INVENTION
The antlerous glass of the present invention contains substantially no alkali metal oxide (for example, Na 2 O, K 2 O, etc.). Specifically, the total amount of alkali metal oxide is 0.5% by weight or less, more preferably 0.2% by weight or less.
[0018]
Next, the reason for limiting the composition range of each component as described above will be described.
[0019]
When the content of SiO 2 is less than 60% mol, the strain point cannot be sufficiently increased, the chemical durability is deteriorated, and the thermal expansion coefficient is increased. If it exceeds 72 mol%, the meltability decreases and the devitrification temperature increases. A more preferable range is 66 to 70 mol%.
[0020]
Al 2 O 3 suppresses the phase separation of the glass, lowers the thermal expansion coefficient, and increases the strain point .
[0021]
B 2 O 3 prevents white turbidity from being generated by BHF, and can achieve a reduction in thermal expansion coefficient and density without increasing the viscosity at high temperatures. When the content is less than 5 mol%, the BHF property is deteriorated, and when it is 10 mol% or more, the acid resistance is deteriorated. A more preferable range is 6 to 9 mol%.
[0022]
MgO is not an essential component, but among alkaline earth metal oxides, it can be contained because it has a low coefficient of thermal expansion and does not lower the strain point. If the content exceeds 5 mol%, white turbidity due to BHF or phase separation of glass tends to occur. The range in this invention is 1-5 mol%.
[0023]
Although CaO is not an essential component, it can improve the meltability of glass by containing CaO. If the content exceeds 2.5 mol%, the characteristics of the high-definition polysilicon TFT may be deteriorated.
[0024]
In recent years, polysilicon type TFTs have been proposed and used for those using amorphous silicon type TFTs that have already been commercialized as liquid crystal display devices. Polysilicon type TFT (1) Since the mobility of the transistor can be increased, the control time per pixel is not short, and high definition of the LCD is possible. (2) Driving ICs are provided around the screen. While there is an advantage that it can be mounted, a strong heat treatment (for example, 500 to 600 ° C. × several hours) is required in the manufacturing process. At such a high temperature, impurities in the glass diffuse into the TFT, increasing the leakage current, deteriorating the TFT characteristics, and making it difficult to produce a high-definition TFT.
[0025]
The most problematic of such impurities is phosphorus in limestone used as a raw material for CaO. Therefore, it is desirable that phosphorus is not substantially contained in the alkali-free glass of the present invention. In order to reduce phosphorus in the glass, a method using a high-purity raw material with a small amount of phosphorus impurities can be considered, but it is disadvantageous in terms of cost.
[0026]
In the present invention, since the CaO content is 1.5 mol% or less, the TFT characteristics are not deteriorated, and a glass substrate having excellent characteristics for a liquid crystal display panel can be obtained. CaO range of not more than 1.5 mol%, particularly preferably not substantially contained.
[0027]
SrO suppresses the phase separation of glass and is a relatively useful component against white turbidity due to BHF, so it is contained in an amount of 1 mol% or more. If the content exceeds 7 mol%, the thermal expansion coefficient increases. A more preferable range is 2 to 7 mol%.
[0028]
BaO is essential in the present invention because it has effects of suppressing glass phase separation, improving meltability, and suppressing devitrification temperature. If the content exceeds 5 mol%, the thermal expansion coefficient increases, and chemical durability such as acid resistance also deteriorates.
[0029]
MgO + CaO + SrO + BaO makes melting difficult if the total amount is less than 7 mol%. If it exceeds 18 mol%, the density increases. A more preferable range is 9 to 16 mol%.
[0030]
In the present invention, phosphorus because it may deteriorate the TFT characteristics, have a substantially contained.
[0031]
In addition to the above components, the glass of the present invention can contain ZnO, SO 3 , F, and Cl in a total amount of 5 mol% or less in order to improve the meltability, clarity, and moldability of the glass.
[0032]
In addition, when PbO, As 2 O 3 and Sb 2 O 3 are included, a lot of man-hours are required for the treatment of glass cullet, so it is preferable not to include them except for those inevitably mixed as impurities.
[0033]
Thus, the composition of the preferred glass of the present invention, essentially by mol%, SiO 2: 66~70%, Al 2 O 3: 9~14%, B 2 O 3: 6~9%, MgO: It consists of 1 to 5%, SrO: 2 to 7 %, BaO: 1 to 5%, MgO + SrO + BaO: 9 to 16%, and substantially does not contain phosphorus and CaO.
[0034]
The glass of the present invention has a strain point of 640 ° C. or higher . Preferably it is 650 degreeC or more. The thermal expansion coefficient is preferably 30 × 10 −7 / ° C. to 45 × 10 −7 / ° C., more preferably 30 × 10 −7 / ° C. to 40 × 10 −7 / ° C. Furthermore, the density is 2.70 g / cc or less . Preferably it is 2.65 g / cc or less.
[0035]
The glass of the present invention can be produced, for example, by the following method. That is, normally used raw materials for each component are blended so as to become target components, which are continuously charged into a melting furnace and heated to 1500 to 1600 ° C. for melting. The molten glass is formed into a predetermined plate thickness by a float method, and is cut after slow cooling.
[0036]
【Example】
The raw material of each component was prepared so that it might become a target composition, and it melted at the temperature of 1500-1600 degreeC using the platinum crucible. In melting, the glass was homogenized by stirring with a platinum stirrer. Subsequently, the molten glass was poured out, formed into a plate shape, and then slowly cooled.
[0037]
Tables 1 and 2 show the glass composition, thermal expansion coefficient, high temperature viscosity, devitrification temperature, strain point, density, acid resistance, BHF resistance, and leakage current (TFT characteristics) thus obtained. Examples 1 , 5, and 7 are examples, and examples 2 to 4, example 6, and examples 8 to 13 are comparative examples.
[0038]
The coefficient of thermal expansion is shown in units of 10 −7 / ° C., the high temperature viscosity is shown in terms of the viscosity (unit: ° C.) of 10 2 and 10 4 poise, the devitrification temperature is shown in units of ° C., and the density is in units of units. Indicated in g / cc. The strain point (unit: ° C.) was measured according to JIS R3103.
[0039]
The acid resistance was shown as a weight loss per unit area (unit: mg / cm 2 ) after immersion in 0.1 N HCl at 90 ° C. for 20 hours. The acid resistance is preferably 0.3 mg / cm 2 or less, particularly 0.2 mg / cm 2 or less.
[0040]
BHF resistance is a unit area after immersion for 20 minutes at 25 ° C. in a NH 4 F / HF mixed solution (a solution in which a 40 wt% NH 4 F aqueous solution and a 50 wt% HF aqueous solution are mixed at a volume ratio of 9: 1). The weight loss per unit (unit: mg / cm 2 ). The BHF resistance is preferably 0.7 mg / cm 2 or less, particularly 0.6 mg / cm 2 or less.
[0041]
TFT characteristics were measured for Examples 1, 2, and 10-12. That is, a polysilicon type TFT having an electrode length of 10 μm was formed on a glass substrate, and the leakage current (unit: pA) was measured when the gate voltage was −5 V, the source voltage was 0 V, and the drain voltage was +10 V. The leakage current is preferably about several pA or less.
[0042]
The glasses of Examples 1 to 10 have a low coefficient of thermal expansion of 30 to 40 × 10 −7 / ° C., a high strain point of 630 ° C. or higher, and can sufficiently withstand heat treatment at high temperatures. The density is also less than 2.70 g / cc, less than 2.76 g / cc of conventional Corning Code 7059 glass. In terms of chemical characteristics, BHF hardly causes white turbidity and has excellent acid resistance. The temperature corresponding to 10 2 poise, which is a standard for melting, is relatively low, and melting is easy. The relationship between the temperature corresponding to 10 4 poise, which is a standard for moldability, and the devitrification temperature is good, and devitrification occurs during molding. There seems to be no trouble such as generating.
[0043]
Furthermore, with respect to TFT characteristics, the leakage current is less than 10 pA, and it can sufficiently withstand the recent high integration of TFTs.
[0044]
On the other hand, Examples 11 to 13 have a leakage current of about a dozen to several tens pA, and may become a problem as TFTs are highly integrated.
[0045]
[Table 1]
Figure 0004250208
[0046]
[Table 2]
Figure 0004250208
[0047]
【The invention's effect】
The glass according to the present invention can be formed by a float process. Further, white turbidity due to BHF hardly occurs, the acid resistance is excellent, the heat resistance is high, and the coefficient of thermal expansion is low, so that it is suitable as a display substrate or a photomask substrate. In particular, since it does not adversely affect the TFT characteristics, it is suitable for a TFT type display substrate.
[0048]

Claims (9)

モル%表示で実質的に、SiO2 :60〜72%、Al23 :9〜14%、B23 :5〜10%未満、MgO:1〜5%、CaO:0〜1.5%、SrO:1〜7%、BaO:1〜5%、MgO+CaO+SrO+BaO:7〜18%からなり、リンを実質的に含有せず、歪点が640℃以上、密度が2.70g/cc以下であるディスプレイ基板用無アルカリガラス。Essentially by mol%, SiO 2: 60~72%, Al 2 O 3: 9~14%, B 2 O 3: less than 5~10%, MgO: 1~5%, CaO: 0~1. 5%, SrO: 1 to 7%, BaO: 1 to 5%, MgO + CaO + SrO + BaO: 7 to 18% , substantially not containing phosphorus, strain point of 640 ° C. or higher, density of 2.70 g / cc or lower Alkali-free glass for display substrates . PbO、As23 及びSb23 を実質的に含有しない請求項1に記載のディスプレイ基板用無アルカリガラス。The alkali-free glass for a display substrate according to claim 1, substantially free of PbO, As 2 O 3 and Sb 2 O 3 . 90℃の0.1規定のHCl中に20時間浸漬後の単位面積あたりの重量減少量が0.3mg/cm2 以下である請求項1または2に記載のディスプレイ基板用無アルカリガラス。90 ° C. 0.1N claim 1 or 2 display substrate for alkali-free glass according to weight loss per unit area after immersion for 20 hours in HCl is 0.3 mg / cm 2 less. NH4 F/HF混液(40重量%NH4 F水溶液と50重量%HF水溶液とを体積比で9:1に混合した液)中に25℃で20分浸漬後の単位面積あたりの重量減少量が0.7mg/cm2 以下である請求項1〜のいずれかに記載のディスプレイ基板用無アルカリガラス。Weight reduction per unit area after immersion in NH 4 F / HF mixture (40% by weight NH 4 F aqueous solution and 50% by weight HF aqueous solution mixed at a volume ratio of 9: 1) at 25 ° C. for 20 minutes The alkali-free glass for a display substrate according to any one of claims 1 to 3 , wherein is 0.7 mg / cm 2 or less. モル%表示で実質的に、SiO2 :66〜70%、Al23 :9〜14%、B23 :6〜9%、MgO:1〜5%、SrO:2〜7%、BaO:1〜5%、MgO+SrO+BaO:9〜16%からなり、リン及びCaOを実質的に含有しない請求項1〜のいずれかに記載のディスプレイ基板用無アルカリガラス。Essentially by mol%, SiO 2: 66~70%, Al 2 O 3: 9~14%, B 2 O 3: 6~9%, MgO: 1~5%, SrO: 2~7%, BaO: 1~5%, MgO + SrO + BaO: made 9-16%, phosphorus and CaO substantially containing non claim 1 display substrate for alkali-free glass according to any one of 4. 歪点が650℃以上である請求項1〜のいずれかに記載のディスプレイ基板用無アルカリガラス。The alkali-free glass for a display substrate according to any one of claims 1 to 5 , wherein the strain point is 650 ° C or higher. 熱膨張係数が30×10-7/℃〜40×10-7/℃である請求項1〜のいずれかに記載のディスプレイ基板用無アルカリガラス。Thermal expansion coefficient of 30 × 10 -7 / ℃ ~40 × 10 -7 / ℃ at which claims 1-6 non-alkali glass for a display substrate according to any one of. 請求項1〜のいずれかに記載のディスプレイ基板用無アルカリガラスをセルを形成する一対の基板のうちの少なくとも一方の基板として使用した液晶ディスプレイパネル。Liquid crystal display panel used as at least one substrate of the pair of substrates forming the cell display alkali-free glass substrate according to any one of claims 1-7. 請求項1〜のいずれかに記載のディスプレイ基板用無アルカリガラスからなるガラス板であって、フロート法により成形されたガラス板。A glass plate made of non-alkali glass for a display substrate according to any one of claims 1 to 7 a glass sheet by a float method.
JP31101995A 1994-11-30 1995-11-29 Non-alkali glass and liquid crystal display panel for display substrates Expired - Lifetime JP4250208B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31101995A JP4250208B2 (en) 1994-11-30 1995-11-29 Non-alkali glass and liquid crystal display panel for display substrates

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP29652294 1994-11-30
JP27323595 1995-10-20
JP7-273235 1995-10-20
JP6-296522 1995-10-20
JP31101995A JP4250208B2 (en) 1994-11-30 1995-11-29 Non-alkali glass and liquid crystal display panel for display substrates

Publications (2)

Publication Number Publication Date
JPH09169538A JPH09169538A (en) 1997-06-30
JP4250208B2 true JP4250208B2 (en) 2009-04-08

Family

ID=27336079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31101995A Expired - Lifetime JP4250208B2 (en) 1994-11-30 1995-11-29 Non-alkali glass and liquid crystal display panel for display substrates

Country Status (1)

Country Link
JP (1) JP4250208B2 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6169047B1 (en) 1994-11-30 2001-01-02 Asahi Glass Company Ltd. Alkali-free glass and flat panel display
DE19840113B9 (en) * 1998-09-03 2016-10-13 Eglass Asia Ltd. Alkali-free glass composition for the production of flat glass
US6319867B1 (en) 1998-11-30 2001-11-20 Corning Incorporated Glasses for flat panel displays
JP4576680B2 (en) * 1999-08-03 2010-11-10 旭硝子株式会社 Alkali-free glass
DE19942259C1 (en) * 1999-09-04 2001-05-17 Schott Glas Alkaline earth aluminum borosilicate glass and its uses
DE10000836B4 (en) * 2000-01-12 2005-03-17 Schott Ag Alkali-free aluminoborosilicate glass and its uses
DE10000838B4 (en) * 2000-01-12 2005-03-17 Schott Ag Alkali-free aluminoborosilicate glass and its uses
DE10000837C1 (en) 2000-01-12 2001-05-31 Schott Glas Alkali-free alumino-borosilicate glass used as substrate glass in thin film transistor displays and thin layer solar cells contains oxides of silicon, boron, aluminum, magnesium, strontium, and barium
DE10000839C1 (en) 2000-01-12 2001-05-10 Schott Glas Alkali-free aluminoborosilicate glass used as substrate glass in displays and in thin layer photovoltaics contains oxides of silicon, boron, aluminum, magnesium, calcium, strontium, barium and zinc
JP2002003240A (en) * 2000-06-19 2002-01-09 Nippon Electric Glass Co Ltd Glass substrate for liquid crystal display
DE10064804C2 (en) * 2000-12-22 2003-03-20 Schott Glas Alkali-free aluminoborosilicate glasses and their use
JP2002308643A (en) * 2001-02-01 2002-10-23 Nippon Electric Glass Co Ltd Alkali-free glass and glass substrate for display
JP4135088B2 (en) * 2003-07-31 2008-08-20 日本電気株式会社 Liquid crystal display device and liquid crystal projector
JPWO2013005402A1 (en) * 2011-07-01 2015-02-23 AvanStrate株式会社 Glass substrate for flat panel display and manufacturing method thereof
KR101305592B1 (en) * 2011-07-20 2013-09-09 아사히 가라스 가부시키가이샤 Method for producing float glass
WO2013047586A1 (en) * 2011-09-30 2013-04-04 AvanStrate株式会社 Glass substrate for flat panel display
KR101833805B1 (en) 2011-12-29 2018-03-02 니폰 덴키 가라스 가부시키가이샤 Alkali-free glass
EP3142977B1 (en) * 2014-05-15 2021-10-06 Corning Incorporated Aluminosilicate glasses
CN109153596A (en) * 2016-05-25 2019-01-04 Agc株式会社 The manufacturing method of alkali-free glass substrate, multilayer board and glass substrate

Also Published As

Publication number Publication date
JPH09169538A (en) 1997-06-30

Similar Documents

Publication Publication Date Title
JP3988209B2 (en) Alkali-free glass and liquid crystal display panel
US5801109A (en) Alkali-free glass and flat panel display
US6169047B1 (en) Alkali-free glass and flat panel display
JP3804112B2 (en) Alkali-free glass, alkali-free glass manufacturing method and flat display panel
JP3901757B2 (en) Alkali-free glass, liquid crystal display panel and glass plate
JP4250208B2 (en) Non-alkali glass and liquid crystal display panel for display substrates
JP3800657B2 (en) Alkali-free glass and flat display panel
US5374595A (en) High liquidus viscosity glasses for flat panel displays
US10351466B2 (en) Glass
TWI396670B (en) Method for manufacturing non-alkali glass
JP4737709B2 (en) Method for producing glass for display substrate
JP5233998B2 (en) Glass plate, method for producing the same, and method for producing TFT panel
US5326730A (en) Barium aluminosilicate glasses
JPH04325435A (en) Alkali-free glass
JPH0458421B2 (en)
JP7448890B2 (en) Alkali-free glass plate
JP7478340B2 (en) Alkaline-free glass plate
WO2014208521A1 (en) Alkali-free glass
JP7530032B2 (en) Glass Substrate
KR102229428B1 (en) Alkali-free glass
WO2018186143A1 (en) Glass substrate
CN102399061A (en) Alkali-free glass and liquid crystal display panel
WO2014208524A1 (en) Alkali-free glass
US20230257295A1 (en) Alkali-free glass panel
TW202430479A (en) Alkali-free glass plate

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081127

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090119

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120123

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120123

Year of fee payment: 3

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120123

Year of fee payment: 3

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120123

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130123

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130123

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140123

Year of fee payment: 5

EXPY Cancellation because of completion of term