JP3988209B2 - Alkali-free glass and liquid crystal display panel - Google Patents
Alkali-free glass and liquid crystal display panel Download PDFInfo
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- JP3988209B2 JP3988209B2 JP14549597A JP14549597A JP3988209B2 JP 3988209 B2 JP3988209 B2 JP 3988209B2 JP 14549597 A JP14549597 A JP 14549597A JP 14549597 A JP14549597 A JP 14549597A JP 3988209 B2 JP3988209 B2 JP 3988209B2
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
Description
【0001】
【発明の属する技術分野】
本発明は、各種ディスプレイやフォトマスク用基板ガラスとして好適な、アルカリ金属酸化物を実質上含有せずフロート成形可能な、無アルカリガラスおよびそれを用いた液晶ディスプレイパネルに関する。
【0002】
【従来の技術】
従来、各種ディスプレイ用基板ガラス、特に表面に金属または酸化物薄膜等を形成させるものでは、以下の特性が要求される。
【0003】
(1)アルカリ金属酸化物を含有すると、アルカリ金属イオンが薄膜中に拡散して、膜特性を劣化させるため、実質的にアルカリ金属イオンを含まないこと。
(2)薄膜形成工程で高温にさらされるので、ガラスの変形およびガラスの構造安定化に伴う収縮を最小限に抑えるため、高い歪点を有すること。
(3)半導体形成に用いられる各種薬品に対して充分な化学耐久性を有すること。特にSiOx やSiNx のエッチングのためのフッ酸、フッ化アンモニウム等を主成分とするバッファードフッ酸(BHF)に対して耐久性があること。
(4)内部および表面に欠点(泡、脈理、インクルージョン、ピット、キズ、等)をもたないこと。
【0004】
従来、各種ディスプレイやフォトマスク用基板ガラスとしてコーニングコード7059ガラスが広く用いられている。しかし、このガラスにはディスプレイ用として以下に示す不充分な点があった。
【0005】
(1)歪点が593℃と低いので、ディスプレイ作製工程におけるガラスの収縮を低減するための前熱処理を、工程前に行わなければならない。
(2)金属電極や透明導電膜(ITOなど)のエッチングに用いる塩酸等への溶出量が多く、ディスプレイ作製工程中で溶出物が再結晶するなどして、ディスプレイ作製に困難がある。
【0006】
上記要求に加えて、近年、ディスプレイが大型化するに伴い次の2点が新たに要求されてきた。
(1)上記コード7059ガラスの密度は2.76g/ccであり、さらに軽量化を図るため密度の小さいものが必要である。
(2)上記コード7059ガラスの熱膨張係数が46×10-7/℃であり、ディスプレイ作製時の昇降温速度を上げ、生産効率を上げるため、さらに熱膨張係数の小さいものが必要である。
【0007】
B2 O3 に関しては、特開平1−160844にはB2 O3 を20〜23カチオン%含有するものが開示されているが、B2 O3 量が多く歪点が充分には高くない。特開昭61−281041にはB2 O3 を0.1〜4重量%、特開平4−175242にはB2 O3 を0.1〜5モル%、特開平4−325435にはB2 O3 を0〜3重量%、含有するものが開示されているが、B2 O3 量が少なくBHFに対する耐久性が充分ではない。
【0008】
BaOに関しては、特開平4−325434にはBaOを10〜20重量%、特開昭63−74935にはBaOを10〜22重量%、特開昭59−169953にはBaOを15〜40重量%、含有するものが開示されているが、BaOが多く熱膨張係数が大きいうえ、密度も大きい。
【0009】
MgOに関しては、特開昭61−132536にはMgOを6.5〜12重量%、特開昭59−116147にはMgOを5〜15重量%、特開昭60−71540にはMgOを5〜17重量%、特開昭60−42246にはMgOを10〜25モル%、含有するものが開示されているが、MgOを多く含有したガラスは分相がおきやすくなる。
【0010】
CaOに関しては、特開昭63−176332にはCaOを11〜25重量%、特開昭58−32038にはCaOを7〜20モル%、特開平2−133334にはCaOを8〜15重量%、特開平3−174336にはCaOを7〜12重量%、特開平6−40739にはCaOを10〜12重量%、特開平5−201744にはCaOを18カチオン%以上、含有するものが開示されているが、CaOを多量に含有すると熱膨張係数が大きくなる傾向がある。
【0011】
Al2 O3 に関しては、特開昭61−236631にはAl2 O3 を22.5〜35重量%、含有するものが開示されているが、Al2 O3 量が多く塩酸等への薬品への溶出が多い。
【0012】
P2 O5 に関しては、特開昭61−261232、特開昭63−11543、にはP2 O5 を含有するものが開示されているが、薄膜の半導体特性を悪化させ好ましくない。
【0013】
【発明が解決しようとする課題】
また、歪点が640℃以上で、熱膨張係数が比較的小さいガラスは、特開平4−160030、特開平6−263473に記載されている。しかし、このガラスはBaOを相当量必須としているので、低密度と低熱膨張係数の両立が難しく、より大型化をめざすという時代の要請に完全にこたえたものになっていない。
【0014】
本発明の目的は、上記欠点を解決するとともに、歪点が650℃以上で、熱膨張係数、密度が小さく、BHFにより白濁をおこさず、塩酸等の薬品への耐久性も優れ、熔解・成形が容易で、フロート成形が可能な無アルカリガラスを提供することにある。
【0015】
【課題を解決するための手段】
本発明は、歪点が650℃以上であって、重量%表示で実質的に、SiO2 :58.4〜66.0%、Al2 O3 :15.3〜22.0%、B2 O3 :5.0〜12.0%、MgO:3.9〜6.5%、CaO:0.9〜7.0%、SrO:4.0〜12.5%、MgO+CaO+SrO:9.0〜18.0%を含有し、PbO、As2 O3、Sb2 O3およびBaOを実質的に含有せず、密度が2.55g/cc未満であり、熱膨張係数が40×10-7/℃未満であり、粘度が102ポイズとなる温度が1670℃以下であり、90℃の0.1規定のHCl中に20時間浸漬後の単位面積あたりの重量減少量が0.3mg/cm2 以下である無アルカリガラスである。
【0016】
【発明の実施の形態】
本発明の無アルカリガラスはアルカリ金属酸化物(例えばNa2 O、K2 Oなど)を実質的に含有しないものである。具体的にはアルカリ金属酸化物が総量で0.5重量%以下、より好ましくは0.2重量%以下とされる。
【0017】
上記の通り各成分の組成範囲を限定した理由について述べる。
SiO2 はその含有量が少なすぎると、歪点が充分に上げられないとともに、化学耐久性が悪化し、熱膨張係数が増大する。好ましくは59.0重量%以上である。多すぎると、熔解性が低下し、失透温度が上昇する。好ましくは65.0重量%以下、より好ましくは62.7重量%以下である。
【0018】
Al2 O3 はガラスの分相性を抑制し、熱膨張係数を下げ、歪点を上げる。その含有量が少なすぎると、この効果があらわれない。好ましくは15.3重量%以上である。多すぎると、ガラスの熔解性が悪くなる。好ましくは21.1重量%以下である。
【0019】
B2 O3 はBHFによる白濁発生を防止し、高温での粘性を高くさせずに熱膨張係数と密度の低下を達成できる。その含有量が少なすぎると、BHF性が悪化する。好ましくは5.2重量%以上である。多すぎると、耐酸性が悪くなるとともに歪点が低くなる。好ましくは10.2重量%以下である。
【0020】
MgOはアルカリ土類金属酸化物の中では熱膨張係数を低くし、かつ歪点が低下しないため、必須ではないが、含有させることができる。その含有量が多すぎると、BHFによる白濁やガラスの分相が生じやすくなる。好ましくは6.0重量%以下である。
【0021】
CaOは、含有することによりガラスの熔解性を向上させうる。一方、多すぎると、熱膨張係数を大きくし、失透温度を上げてしまう。好ましくは6.6重量%以下である。
【0022】
SrOはガラスの分相を抑制し、BHFによる白濁に対し比較的有用な成分であるため、必須とされる。好ましくは4.6重量%以上である。その含有量が多すぎると、熱膨張係数が増大する。好ましくは12.1重量%以下である。
【0023】
BaOは、ガラスの分相を抑制し、熔解性を向上させ、失透温度を抑制する効果を有する成分である。しかし、その含有量が多すぎると、密度が大きくなり、熱膨張係数を増大させる傾向が強い。より密度が小さく熱膨張係数を小さくするという観点では、不純物として含有される量を超えて(すなわち実質的に)含有されない。
【0024】
MgO+CaO+SrOは、その合量が少なすぎると、熔解を困難にさせる。
好ましくは10.9重量%以上である。多すぎると、密度が大きくなる。好ましくは17.4重量%以下である。
【0025】
近年、液晶表示装置としてすでに商品化されているアモルファスシリコンタイプのTFTを使用したものに対して、ポリシリコンタイプのTFTが提案され、使用されてきている。ポリシリコンタイプのTFTは、(1)トランジスタの易動度を上げうるので、1画素あたりの制御時間が短くなり、LCDの高精細化が可能になる、(2)画面周辺に駆動用ICを実装することが可能になる、などの利点がある反面、作製工程での強い熱処理(例えば、500〜600℃×数時間)が必要になる。
【0026】
このような高温では、ガラス中の不純物がTFTに拡散して、リーク電流が増大し、TFT特性を悪化させ、高精細のTFT作製を難しくするおそれがある。このような不純物でもっとも問題視されるのは、リンである。ガラス基板にTFTを形成する際、熱処理によってリンがTFT中に拡散し、リーク電流を増大させ、TFT特性を悪化させるおそれがあるため、本発明では、リンは原子(カチオン)重量表示で20ppm以下にされることが好ましい。
【0027】
本発明のガラスは上記成分以外にガラスの熔解性、清澄性、成形性を改善するため、ZnO、SO3 、F、Clを総量で5モル%以下添加できる。
また、PbO、As2 O3 またはSb2 O3 を含むとガラスカレットの処理に工数を多く必要とするので不純物等として不可避的に混入するものを除き含有しない。
【0028】
かくして本発明において好ましい態様のガラスの組成は、例えば、重量%表示で実質的に、SiO2 :59.0〜62.7%、Al2 O3 :15.3〜21.1%、B2 O3 :5.2〜10.2%、MgO:3.9〜6.0%、CaO:0.9〜6.6%、SrO:4.6〜12.5%、MgO+CaO+SrO:10.9〜17.4%からなるものである。
【0029】
本発明のガラスは、歪点が650℃以上である。熱膨張係数については、40×10-7/℃未満であり、特に、30×10-7/℃以上40×10-7/℃未満であることが好ましい。密度については、2.55g/cc未満であり、好ましくは2.50g/cc未満である。
【0030】
また、本発明のガラスは、フロート法の成形における成形温度(粘度が104 ポイズになる温度)が失透温度より低くないので、フロート成形に適したものになっている。
【0031】
本発明のガラスは、例えば次のような方法で製造できる。すなわち、通常使用される各成分の原料を目標成分になるように調合し、これを熔解炉に連続的に投入し、1500〜1600℃に加熱して熔融する。この熔融ガラスをフロート法により所定の板厚に成形し、徐冷後切断する。こうして得られたガラス板は、液晶ディスプレイのセルを形成する1対の基板のうちの少なくとも一方の基板として使用される。
【0032】
【実施例】
各成分の原料を目標組成になるように調合し、白金坩堝を用いて1500〜1600℃の温度で熔解した。熔解にあたっては、白金スターラを用い撹拌しガラスの均質化を行った。次いで熔解ガラスを流し出し、板状に成形後徐冷した。
【0033】
表1〜表4には、こうして得られたガラス組成と熱膨張係数、高温粘度、失透温度、歪点、密度、耐酸性、耐BHF性を示した。表5〜表8は、表1〜表4の組成をモル%換算したものである。例23〜27は実施例、例1〜22および例28〜34は比較例である。特に、例28〜32には、リンの含有量(原子重量ppm)と、TFT特性を示すリーク電流を併記した。
【0034】
熱膨張係数は単位:10-7/℃で示し、高温粘度は粘度が102 、104 ポイズとなる温度(単位:℃)で示し、失透温度、歪点は単位:℃で示し、密度は単位:g/ccで示した。歪点(単位:℃)はJIS R3103に従って測定した。
【0035】
耐酸性は、90℃の0.1規定のHCl中に20時間浸漬後の単位面積あたりの重量減少量(単位:mg/cm2 )で示す。耐酸性は0.3mg/cm2 以下であり、0.2mg/cm2 以下であることが特に好ましい。
【0036】
耐BHF性は、NH4 F/HF混液(40重量%NH4 F水溶液と50重量%HF水溶液とを体積比で9:1に混合した液)中に25℃で20分浸漬後の単位面積あたりの重量減少量(単位:mg/cm2 )で示す。耐BHF性は0.7mg/cm2 以下であることが好ましく、0.6mg/cm2 以下であることが特に好ましい。
【0037】
リーク電流は、電極長さ10μmのポリシリコンタイプTFTをガラス基板上に作成し、ゲート電圧を−5V、ソース電圧を0V、ドレイン電圧を+10Vとしたときのリーク電流(単位:pA)を測定した。リーク電流は50pA程度以下であることが好ましい。
【0038】
例23〜27のガラスは、熱膨張係数は30×10-7〜40×10-7/℃と低い値を示し、歪点は650℃以上と高い値を示し、高温での熱処理に充分耐えられる。密度も2.55g/cc未満で従来のコーニングコード7059ガラスの2.76g/ccよりはるかに小さい。化学的特性に関してもBHFにより白濁を生じにくく、耐酸性にも優れる。熔解の目安となる102 ポイズに相当する温度も比較的低く熔解が容易であり、成形性の目安となる104 ポイズに相当する温度が失透温度以上になっており、フロート成形時に失透が生成するなどのトラブルがないと考えられる。
【0039】
一方、本発明の範囲外の組成である例33、例34は熱膨張係数が大きく、密度が比較的大きい。また、例32はリンの含有量が大きく、リーク電流が大きくなっている。
【0040】
【表1】
【0041】
【表2】
【0042】
【表3】
【0043】
【表4】
【0044】
【表5】
【0045】
【表6】
【0046】
【表7】
【0047】
【表8】
【0048】
【発明の効果】
本発明によるガラスは、フロート法による成形が可能である。また、BHFによる白濁が生じにくく、耐酸性に優れ、耐熱性が高く、低い熱膨張係数を有するのでディスプレイ用基板、フォトマスク基板として適する。特に、密度が非常に小さいので、大型のTFTタイプのディスプレイ基板等に好適である。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a non-alkali glass suitable for various displays and photomask substrate glass, which can be float-molded substantially without containing an alkali metal oxide, and a liquid crystal display panel using the same.
[0002]
[Prior art]
Conventionally, various display substrate glasses, particularly those in which a metal or oxide thin film is formed on the surface, require the following characteristics.
[0003]
(1) When an alkali metal oxide is contained, the alkali metal ions diffuse into the thin film and deteriorate the film characteristics.
(2) Since it is exposed to a high temperature in the thin film formation process, it has a high strain point in order to minimize the deformation caused by glass deformation and glass structural stabilization.
(3) Sufficient chemical durability against various chemicals used for semiconductor formation. In particular, it has durability against buffered hydrofluoric acid (BHF) mainly composed of hydrofluoric acid, ammonium fluoride, etc. for etching SiO x and SiN x .
(4) There are no defects (bubbles, striae, inclusions, pits, scratches, etc.) inside and on the surface.
[0004]
Conventionally, Corning Code 7059 glass has been widely used as substrate glass for various displays and photomasks. However, there was a point insufficient shown below as a de I spray on the glass.
[0005]
(1) Since the strain point is as low as 593 ° C., pre-heat treatment for reducing glass shrinkage in the display manufacturing process must be performed before the process.
(2) The amount of elution into hydrochloric acid or the like used for etching a metal electrode or transparent conductive film (ITO, etc.) is large, and the eluate recrystallizes during the display manufacturing process, which makes it difficult to manufacture the display.
[0006]
In addition to the above requirements, the following two points have been newly demanded in recent years as the display becomes larger.
(1) The density of the cord 7059 glass is 2.76 g / cc, and a glass with a low density is required to further reduce the weight.
(2) The above-described code 7059 glass has a thermal expansion coefficient of 46 × 10 −7 / ° C., and in order to increase the temperature raising / lowering speed during production of the display and increase the production efficiency, a glass having a smaller thermal expansion coefficient is required.
[0007]
Regarding B 2 O 3 , JP-A-1-160844 discloses B 2 O 3 containing 20 to 23 cations, but the amount of B 2 O 3 is large and the strain point is not sufficiently high. JP 61-281041 to 0.1 to 4% by weight of B 2 O 3 is from 0.1 to 5 mol% of B 2 O 3 is in JP-A 4-175242, the Japanese Patent Laid-Open 4-325435 B 2 O 3 0 to 3% by weight, although those containing discloses, is not sufficient resistance to the amount of B 2 O 3 is less BHF.
[0008]
Regarding BaO, JP-A-4-325434 contains 10 to 20% by weight of BaO, JP-A 63-74935 uses 10 to 22% by weight of BaO, and JP-A 59-169953 uses 15 to 40% by weight of BaO. Although what is contained is disclosed, the BaO content is large, the thermal expansion coefficient is large, and the density is also large.
[0009]
Regarding MgO, JP-A 61-132536 includes 6.5 to 12% by weight of MgO, JP-A 59-116147 includes 5 to 15% by weight of MgO, JP-A 60-71540 includes 5 to 5% of MgO. 17% by weight, and JP-A-60-42246 discloses a composition containing 10 to 25 mol% of MgO, but a glass containing a large amount of MgO tends to cause phase separation.
[0010]
Regarding CaO, JP-A-63-176332 has 11 to 25% by weight of CaO, JP-A-58-32038 has 7 to 20% by mole of CaO, and JP-A-2-133334 has 8 to 15% by weight of CaO. JP-A-3-174336 discloses 7-12% by weight of CaO, JP-A-6-40739 contains 10-12% by weight of CaO, and JP-A-5-201744 contains at least 18 cations of CaO. However, when CaO is contained in a large amount, the thermal expansion coefficient tends to increase.
[0011]
With respect to Al 2 O 3, chemicals to 22.5 to 35 wt% of Al 2 O 3 in JP 61-236631, although those containing discloses, Al 2 O 3 amount is large such as hydrochloric acid There are many elutions.
[0012]
Regarding P 2 O 5 , JP-A-61-261232 and JP-A-63-11543 disclose those containing P 2 O 5 , but this is not preferable because it deteriorates the semiconductor characteristics of the thin film.
[0013]
[Problems to be solved by the invention]
Glasses having a strain point of 640 ° C. or higher and a relatively small thermal expansion coefficient are described in JP-A-4-160030 and JP-A-6-263473. However, since this glass requires a considerable amount of BaO, it is difficult to achieve both a low density and a low thermal expansion coefficient, and it has not completely met the demands of the era of increasing the size.
[0014]
The object of the present invention is to solve the above-mentioned drawbacks, have a strain point of 650 ° C. or higher, a small coefficient of thermal expansion and density, no white turbidity due to BHF, excellent durability to chemicals such as hydrochloric acid, melting and molding It is an object of the present invention to provide an alkali-free glass that is easy to float and can be float formed.
[0015]
[Means for Solving the Problems]
The present invention has a strain point of 650 ° C. or higher, and is substantially expressed in terms of weight%, SiO 2 : 58.4 to 66.0%, Al 2 O 3 : 15.3 to 22.0%, B 2 O 3 : 5.0 to 12.0%, MgO: 3.9 to 6.5%, CaO: 0.9 to 7.0%, SrO: 4.0 to 12.5%, MgO + CaO + SrO: 9.0 ˜18.0%, substantially free of PbO, As 2 O 3 , Sb 2 O 3 and BaO, a density of less than 2.55 g / cc, and a thermal expansion coefficient of 40 × 10 −7 The temperature at which the viscosity becomes 10 2 poise is less than 1670 ° C., and the weight loss per unit area after immersion in 0.1 N HCl at 90 ° C. for 20 hours is 0.3 mg / cm It is an alkali-free glass that is 2 or less.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
The alkali-free glass of the present invention contains substantially no alkali metal oxide (for example, Na 2 O, K 2 O, etc.). Specifically, the total amount of alkali metal oxide is 0.5% by weight or less, more preferably 0.2% by weight or less.
[0017]
The reason for limiting the composition range of each component as described above will be described.
If the content of SiO 2 is too small, the strain point cannot be sufficiently increased, the chemical durability is deteriorated, and the thermal expansion coefficient is increased. Preferably it is 59.0 weight% or more. When too much, meltability will fall and devitrification temperature will rise. Preferably it is 65.0 weight% or less, More preferably, it is 62.7 weight% or less.
[0018]
Al 2 O 3 suppresses the phase separation of the glass, lowers the thermal expansion coefficient, and increases the strain point. If the content is too small, this effect does not appear. Preferably it is 15.3% by weight or more. When too much, the meltability of glass will worsen. Preferably it is 21.1 weight% or less.
[0019]
B 2 O 3 prevents white turbidity from being generated by BHF, and can achieve a reduction in thermal expansion coefficient and density without increasing the viscosity at high temperatures. When the content is too small, the BHF property is deteriorated. Preferably it is 5.2 weight% or more. If the amount is too large, the acid resistance is deteriorated and the strain point is lowered. Preferably it is 10.2 weight% or less.
[0020]
MgO is not essential among alkaline earth metal oxides because it has a low coefficient of thermal expansion and does not lower the strain point, but it can be contained. When the content is too large, white turbidity due to BHF or phase separation of glass tends to occur. Preferably it is 6.0 weight% or less.
[0021]
CaO can improve the meltability of the glass by containing. On the other hand, if too large, the coefficient of thermal expansion is increased, and the devitrification temperature is increased. Preferably it is 6.6 weight% or less.
[0022]
SrO is essential because it suppresses the phase separation of glass and is a relatively useful component against white turbidity due to BHF. Preferably it is 4.6 weight% or more. When there is too much the content, a thermal expansion coefficient will increase. Preferably it is 12.1 weight% or less.
[0023]
BaO is a component having an effect of suppressing phase separation of glass, improving meltability, and suppressing devitrification temperature. However, when the content is too large, the density increases and the thermal expansion coefficient tends to increase. From the viewpoint of a smaller density and a smaller thermal expansion coefficient, it is not contained in excess of (ie substantially) the amount contained as an impurity.
[0024]
MgO + CaO + SrO makes melting difficult if the total amount is too small.
Preferably it is 10.9 weight% or more. If it is too much, the density increases. Preferably it is 17.4 weight% or less.
[0025]
In recent years, polysilicon type TFTs have been proposed and used for those using amorphous silicon type TFTs that have already been commercialized as liquid crystal display devices. Polysilicon type TFT (1) Since the mobility of the transistor can be increased, the control time per pixel is shortened and the high definition of the LCD can be achieved. (2) A driving IC is provided around the screen. While there is an advantage that it can be mounted, a strong heat treatment (for example, 500 to 600 ° C. × several hours) is required in the manufacturing process.
[0026]
At such a high temperature, impurities in the glass diffuse into the TFT, increasing the leakage current, deteriorating the TFT characteristics, and making it difficult to produce a high-definition TFT. The most problematic of such impurities is phosphorus. When forming TFTs on a glass substrate, phosphorus diffuses into the TFTs by heat treatment, which may increase leakage current and deteriorate TFT characteristics. Therefore, in the present invention, phosphorus is 20 ppm or less in terms of atomic (cation) weight. It is preferable that
[0027]
In addition to the above components, the glass of the present invention can contain ZnO, SO 3 , F, and Cl in a total amount of 5 mol% or less in order to improve the meltability, clarity, and moldability of the glass.
In addition, when PbO, As 2 O 3 or Sb 2 O 3 is contained, a lot of man-hours are required for the processing of the glass cullet.
[0028]
Thus, the composition of the glass of a preferred embodiment in the present invention is, for example, substantially in terms of% by weight, SiO 2 : 59.0 to 62.7%, Al 2 O 3 : 15.3 to 21.1%, B 2 O 3 : 5.2 to 10.2%, MgO: 3.9 to 6.0%, CaO: 0.9 to 6.6%, SrO: 4.6 to 12.5%, MgO + CaO + SrO: 10.9 It consists of ˜17.4%.
[0029]
The glass of the present invention has a strain point of 650 ° C. or higher. The coefficient of thermal expansion is less than 40 × 10 −7 / ° C., and particularly preferably 30 × 10 −7 / ° C. or more and less than 40 × 10 −7 / ° C. The density is less than 2.55 g / cc, preferably less than 2.50 g / cc.
[0030]
In addition, the glass of the present invention is suitable for float molding because the molding temperature (temperature at which the viscosity becomes 10 4 poise) in the molding by the float method is not lower than the devitrification temperature.
[0031]
The glass of the present invention can be produced, for example, by the following method. That is, normally used raw materials for each component are blended so as to become target components, which are continuously charged into a melting furnace and heated to 1500 to 1600 ° C. for melting. The molten glass is formed into a predetermined plate thickness by a float method, and is cut after slow cooling. The glass plate thus obtained is used as at least one of a pair of substrates forming a cell of a liquid crystal display.
[0032]
【Example】
The raw material of each component was prepared so that it might become a target composition, and it melted at the temperature of 1500-1600 degreeC using the platinum crucible. In melting, the glass was homogenized by stirring with a platinum stirrer. Subsequently, the molten glass was poured out, formed into a plate shape, and then slowly cooled.
[0033]
Tables 1 to 4 show the glass composition, thermal expansion coefficient, high temperature viscosity, devitrification temperature, strain point, density, acid resistance, and BHF resistance thus obtained. Tables 5 to 8 convert the compositions of Tables 1 to 4 into mol%. Examples 23-27 are Examples, Examples 1-22 and Examples 28-34 are comparative examples. In particular, in Examples 28 to 32, the phosphorus content (atomic weight ppm) and the leakage current indicating the TFT characteristics are shown together.
[0034]
The coefficient of thermal expansion is shown in units of 10 −7 / ° C., the high temperature viscosity is shown in terms of the viscosity (unit: ° C.) of 10 2 and 10 4 poise, the devitrification temperature and strain point are shown in units of ° C. Is expressed in units of g / cc. The strain point (unit: ° C.) was measured according to JIS R3103.
[0035]
The acid resistance is shown by the weight loss per unit area (unit: mg / cm 2 ) after immersion in 0.1 N HCl at 90 ° C. for 20 hours. The acid resistance is 0.3 mg / cm 2 or less, and particularly preferably 0.2 mg / cm 2 or less.
[0036]
BHF resistance is a unit area after immersion for 20 minutes at 25 ° C. in a NH 4 F / HF mixed solution (a solution in which a 40 wt% NH 4 F aqueous solution and a 50 wt% HF aqueous solution are mixed at a volume ratio of 9: 1). The weight loss per unit (unit: mg / cm 2 ). The BHF resistance is preferably 0.7 mg / cm 2 or less, particularly preferably 0.6 mg / cm 2 or less.
[0037]
For the leakage current, a polysilicon type TFT having an electrode length of 10 μm was formed on a glass substrate, and the leakage current (unit: pA) was measured when the gate voltage was −5 V, the source voltage was 0 V, and the drain voltage was +10 V. . The leakage current is preferably about 50 pA or less.
[0038]
The glasses of Examples 23 to 27 have a low coefficient of thermal expansion of 30 × 10 −7 to 40 × 10 −7 / ° C., a high strain point of 650 ° C. or higher, and are sufficiently resistant to heat treatment at high temperatures. It is done. The density is also less than 2.55 g / cc, much less than 2.76 g / cc of the conventional Corning Code 7059 glass. In terms of chemical characteristics, BHF hardly causes white turbidity and has excellent acid resistance. The temperature corresponding to 10 2 poise, which is a standard for melting, is relatively low and melting is easy, and the temperature corresponding to 10 4 poise, which is a standard for moldability, is higher than the devitrification temperature. It seems that there is no trouble such as generating.
[0039]
On the other hand, Examples 33 and 34, which are compositions outside the scope of the present invention, have a large coefficient of thermal expansion and a relatively high density. In Example 32, the phosphorus content is large and the leakage current is large.
[0040]
[Table 1]
[0041]
[Table 2]
[0042]
[Table 3]
[0043]
[Table 4]
[0044]
[Table 5]
[0045]
[Table 6]
[0046]
[Table 7]
[0047]
[Table 8]
[0048]
【The invention's effect】
The glass according to the present invention can be formed by a float process. Further, white turbidity due to BHF hardly occurs, the acid resistance is excellent, the heat resistance is high, and the coefficient of thermal expansion is low, so that it is suitable as a display substrate or a photomask substrate. In particular, since the density is very low, it is suitable for a large TFT type display substrate.
Claims (3)
Priority Applications (1)
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JP14549597A JP3988209B2 (en) | 1996-06-03 | 1997-06-03 | Alkali-free glass and liquid crystal display panel |
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JP14030596 | 1996-06-03 | ||
JP8-140305 | 1996-06-03 | ||
JP14549597A JP3988209B2 (en) | 1996-06-03 | 1997-06-03 | Alkali-free glass and liquid crystal display panel |
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JP3988209B2 true JP3988209B2 (en) | 2007-10-10 |
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