JP4231391B2 - Lead frame for semiconductor device and surface light emitting device using the same - Google Patents

Lead frame for semiconductor device and surface light emitting device using the same Download PDF

Info

Publication number
JP4231391B2
JP4231391B2 JP2003389697A JP2003389697A JP4231391B2 JP 4231391 B2 JP4231391 B2 JP 4231391B2 JP 2003389697 A JP2003389697 A JP 2003389697A JP 2003389697 A JP2003389697 A JP 2003389697A JP 4231391 B2 JP4231391 B2 JP 4231391B2
Authority
JP
Japan
Prior art keywords
frame
reflective
semiconductor element
lead
reflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003389697A
Other languages
Japanese (ja)
Other versions
JP2005150624A (en
Inventor
善之 杉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2003389697A priority Critical patent/JP4231391B2/en
Publication of JP2005150624A publication Critical patent/JP2005150624A/en
Application granted granted Critical
Publication of JP4231391B2 publication Critical patent/JP4231391B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Led Device Packages (AREA)

Description

本発明は面発光装置の特に反射面の反射効率に関するものである。   The present invention relates to a reflection efficiency of a surface light emitting device, particularly a reflection surface.

従来からの面発光装置として、例えば、発光ダイオード（以下ＬＥＤと称す）は近年、長寿命で消費電力が少ないなどの特性を有していることから、砲弾型や表面実装型など様々な形態にパッケージングされ、テレビやエアコンなどリモート・コントロール用の送信部や、ＬＣＤディスプレイやプロジェクションディスプレイなどの光源に用いられているものが提案されている（例えば、特許文献１参照）。   As a conventional surface light-emitting device, for example, a light-emitting diode (hereinafter referred to as LED) has characteristics such as long life and low power consumption. A packaged transmitter used for a remote control such as a television or an air conditioner, or a light source such as an LCD display or a projection display has been proposed (for example, see Patent Document 1).

図３は、前記特許文献１に記載された従来例１のフレームインサート成型タイプの面発光装置を示すものである。図３において、図３Ａは平面図、図３Ｂは図３ＡのＶ−Ｖ線に沿った断面図であり、１０１は金属板材をプレス加工又はエッチング加工などにより成型されたリードフレーム、１０２は半導体素子、１０３は半導体素子を銀ペーストなど（図示せず）を介して搭載される半導体素子搭載部、１０４はインナーリード部、１０５は半導体素子１０２とインナーリード部１０４とを導通接続するボンディングワイヤ、１０６は外部回路（図示せず）と接続するアウターリード、１０７は半導体素子１０２の平行方向への光の拡散を防ぐポリフタルアミド（以下ＰＰＡと称す）や液晶ポリマー（ＬＣＰ）などからなる反射枠体、１０８は反射枠体１０７の底面を構成する反射枠体底面、１０９は半導体素子１０２から発する光を効率良く外部に放射する反射面、１１０は半導体素子１０２及びボンディングワイヤ１０５を外部環境から保護したり、半導体素子１０２の光の色調変換などを行う透光性樹脂、１１１は反射枠体１０７の上面である。   FIG. 3 shows a frame insert molding type surface emitting device according to Conventional Example 1 described in Patent Document 1. In FIG. 3, FIG. 3A is a plan view, FIG. 3B is a cross-sectional view taken along the line VV in FIG. 3A, 101 is a lead frame formed by pressing or etching a metal plate, and 102 is a semiconductor element. , 103 is a semiconductor element mounting portion on which a semiconductor element is mounted via silver paste or the like (not shown), 104 is an inner lead portion, 105 is a bonding wire for electrically connecting the semiconductor element 102 and the inner lead portion 104, 106 Is an outer lead connected to an external circuit (not shown), 107 is a reflective frame made of polyphthalamide (hereinafter referred to as PPA), liquid crystal polymer (LCP) or the like which prevents diffusion of light in the parallel direction of the semiconductor element 102 , 108 is the bottom surface of the reflecting frame constituting the bottom surface of the reflecting frame 107, and 109 is the light emitted from the semiconductor element 102 to be efficiently emitted to the outside. Reflective surface that, 110 or protects the semiconductor element 102 and the bonding wires 105 from the outside environment, a translucent resin or the like is performed light color tone conversion semiconductor element 102, 111 is the upper surface of the reflective frame 107.

フレームインサート成型されたリードフレーム１０１は光照射方向である前方を除き、半導体素子１０２の周囲をＰＰＡで取り囲んで反射枠体１０７を形成し、さらに反射枠体１０７には光照射の効率が考慮された反射面１０９及び底部を構成する反射枠体底面１０８が形成されている。また、反射枠体底面１０８には半導体素子搭載部１０３及びインナーリード部１０４が形成されている。また、半導体素子１０２をリードフレーム１０１に形成された半導体素子搭載部１０３に載置し、ボンディングワイヤ１０５を介しインナーリード部１０４と接続されている。半導体素子１０２及びボンディングワイヤ１０５が構成されている反射枠体１０７の内側に透光性樹脂１１０を注入したものである。図４に反射面１０９の形状を模式的に示す。図４Ａは従来の半導体装置の断面図であり、図４Ｂは図４ＡのVI−VI線に沿った断面図、図４Ｃは図４ＡのVII−VII線に沿った断面図、図４Ｄは図４ＡのVIII−VIII線に沿った断面図である。このようにして半導体素子１０２から横方向に出射される光も有効に活用して、光度を高めている。
特開平７−１１１３４２号公報 The lead frame 101 formed by frame insert, except for the front in the light irradiation direction, surrounds the semiconductor element 102 with PPA to form a reflection frame 107, and the reflection frame 107 takes into account the light irradiation efficiency. The reflecting surface 109 and the reflecting frame bottom surface 108 constituting the bottom are formed. A semiconductor element mounting portion 103 and an inner lead portion 104 are formed on the bottom surface 108 of the reflection frame. In addition, the semiconductor element 102 is placed on a semiconductor element mounting portion 103 formed on the lead frame 101 and connected to the inner lead portion 104 via a bonding wire 105. The transparent resin 110 is injected into the inside of the reflection frame 107 in which the semiconductor element 102 and the bonding wire 105 are formed. FIG. 4 schematically shows the shape of the reflective surface 109. 4A is a sectional view of a conventional semiconductor device, FIG. 4B is a sectional view taken along line VI-VI in FIG. 4A, FIG. 4C is a sectional view taken along line VII-VII in FIG. 4A, and FIG. It is sectional drawing along line VIII-VIII. In this way, the light emitted from the semiconductor element 102 in the lateral direction is also effectively used to increase the luminous intensity.
JP-A-7-111342

しかし、上記従来の構成では、光輝度を高くすることやカラー表示にするなどのために、半導体素子１０２の数を増やす場合、半導体素子搭載部１０３の面積を大きくする必要があり、全体構造が大きくなってしまう。一方、全体構造が大きくなることを抑えるために、図５に示した従来例２の面発光装置が考えられる。図５Ａ平面図及び図５ＡのIX−IX線に沿った断面図の図５Ｂを用いて説明する。２０１は金属板材をプレス加工又はエッチング加工などにより成型されたリードフレーム、２０２は半導体素子、２０３は半導体素子を銀ペーストなど（図示せず）を介して搭載される半導体素子搭載部、２０４はインナーリード部、２０５は半導体素子２０２とインナーリード部２０４とを導通接続するボンディングワイヤ、２０６は外部回路（図示せず）と接続するアウターリード、２０７は半導体素子２０２の平行方向への光の拡散を防ぐ反射枠体、２０８は反射枠体２０７の底面を構成する反射枠体底面、２０９は半導体素子２０２から発する光を効率良く外部に放射する反射面、２１０は半導体素子及びボンディングワイヤ２０５を外部環境から保護する透光性樹脂、２１１は透光体２０７の上面である。反射枠体底面２０８形状を反射枠体外形に合わせて反射枠体底面２０８の面積を大きくできる。図６に反射面２０９の形状を模式的に示す。図６Ａは従来の半導体装置の断面図であり、図６Ｂは図６ＡのＸ−Ｘ線に沿った断面図、図６Ｃは図６ＡのXI−XI線に沿った断面図、図６Ｄは図６ＡのXII−XII線に沿った断面図である。反射面２０９が反射枠体上面２１１から反射枠体底面２０８まで、四角の形状を保っており、その結果、半導体素子搭載部２０３では半導体素子２０２を実装する際に面積が大きく確保できることが分かる。しかし、半導体素子２０２を実装する面積を大きく確保することは可能であるが、反射枠体上面２１１が角の形状になっているため、光の反射を効率的に照射することが出来なくなる。   However, in the conventional configuration described above, when the number of semiconductor elements 102 is increased in order to increase the light luminance or make a color display, the area of the semiconductor element mounting portion 103 needs to be increased, and the overall structure is reduced. It gets bigger. On the other hand, in order to suppress an increase in the overall structure, the surface light emitting device of Conventional Example 2 shown in FIG. 5 can be considered. 5A is a plan view and FIG. 5B is a sectional view taken along the line IX-IX in FIG. 5A. 201 is a lead frame formed by pressing or etching a metal plate material, 202 is a semiconductor element, 203 is a semiconductor element mounting portion on which the semiconductor element is mounted via silver paste or the like (not shown), and 204 is an inner A lead part 205 is a bonding wire for electrically connecting the semiconductor element 202 and the inner lead part 204, 206 is an outer lead for connecting to an external circuit (not shown), and 207 is a light diffusion in the parallel direction of the semiconductor element 202. A reflection frame body 208 for preventing, a bottom surface of the reflection frame body constituting the bottom surface of the reflection frame body 207, a reflection surface 209 for efficiently radiating the light emitted from the semiconductor element 202 to the outside, and 210 a semiconductor element and the bonding wire 205 for the external environment A translucent resin 211 for protecting the light from the upper surface of the translucent body 207. The area of the reflection frame bottom surface 208 can be increased by matching the shape of the reflection frame bottom surface 208 with the outline of the reflection frame body. FIG. 6 schematically shows the shape of the reflecting surface 209. 6A is a cross-sectional view of a conventional semiconductor device, FIG. 6B is a cross-sectional view along line XX in FIG. 6A, FIG. 6C is a cross-sectional view along line XI-XI in FIG. 6A, and FIG. It is sectional drawing along the XII-XII line | wire. The reflective surface 209 maintains a square shape from the upper surface 211 of the reflective frame body to the bottom surface 208 of the reflective frame body. As a result, it can be seen that the semiconductor element mounting portion 203 can secure a large area when the semiconductor element 202 is mounted. However, although it is possible to secure a large area for mounting the semiconductor element 202, the reflection frame upper surface 211 has a corner shape, so that it is impossible to efficiently irradiate light.

本発明は、上記従来の問題を解決するものであり、複数の半導体素子が搭載できるよう、反射枠体底面の面積を全体構造を大きくすることなく確保し、反射効率の高い面発光装置を提供する。   The present invention solves the above-described conventional problems, and provides a surface light emitting device having high reflection efficiency by ensuring the area of the bottom surface of the reflection frame without increasing the overall structure so that a plurality of semiconductor elements can be mounted. To do.

本発明の半導体装置用リードフレームは、半導体素子搭載部と、インナーリードと、アウターリードと、反射面及び底面から構成された反射枠体とからなる半導体装置用リードフレームであって、前記反射枠体が凹形状に形成され、前記反射枠体の底面が四角形状であり、前記反射枠体上面が円形状であり、前記底面から前記上面にかけてすり鉢形状の反射面が形成されたことを特徴とする。   A lead frame for a semiconductor device according to the present invention is a lead frame for a semiconductor device comprising a semiconductor element mounting portion, an inner lead, an outer lead, and a reflective frame body composed of a reflective surface and a bottom surface. The body is formed in a concave shape, the bottom surface of the reflection frame body is square, the top surface of the reflection frame body is circular, and a mortar-shaped reflection surface is formed from the bottom surface to the top surface. To do.

本発明の面発光装置は、半導体素子搭載部と、インナーリードと、アウターリードと、反射面及び底面から構成された反射枠体とからなる半導体装置用リードフレームを含む面発光装置であって、前記反射枠体が凹形状に形成され、前記反射枠体の底面が四角形状であり、前記反射枠体上面が円形状であり、前記底面から前記上面にかけてすり鉢形状の反射面が形成された半導体装置用リードフレームの半導体素子搭載部に半導体素子が載置され、前記半導体素子と前記インナーリードとが導通接続され、前記反射枠体凹形状内面に透光性樹脂が充填されたことを特徴とする。   The surface light-emitting device of the present invention is a surface light-emitting device including a semiconductor device lead frame including a semiconductor element mounting portion, an inner lead, an outer lead, and a reflective frame body composed of a reflective surface and a bottom surface. The semiconductor in which the reflection frame is formed in a concave shape, the bottom surface of the reflection frame is square, the top surface of the reflection frame is circular, and a mortar-shaped reflection surface is formed from the bottom surface to the top surface A semiconductor element is mounted on a semiconductor element mounting portion of a lead frame for an apparatus, the semiconductor element and the inner lead are conductively connected, and a translucent resin is filled into the concave inner surface of the reflective frame. To do.

本発明は、反射枠体底面部を反射枠体の外形形状に合わせて四角形状とすることにより、半導体素子搭載部の面積を大きくすることができる。さらに、通常半導体素子の外形が四角形状であるため、半導体素子搭載部に有効に半導体素子を搭載することができる。また、反射枠体底面から反射枠体上面にかけてすり鉢形状に反射面を形成することで、半導体素子が発する光を効率よく光放射面に放射できる。   According to the present invention, the area of the semiconductor element mounting portion can be increased by making the bottom surface of the reflective frame into a quadrangular shape in accordance with the outer shape of the reflective frame. Furthermore, since the external shape of the semiconductor element is generally rectangular, the semiconductor element can be effectively mounted on the semiconductor element mounting portion. In addition, by forming the mortar-shaped reflection surface from the bottom surface of the reflection frame to the top surface of the reflection frame, light emitted from the semiconductor element can be efficiently emitted to the light emission surface.

本発明は、半導体素子搭載部と、インナーリードと、アウターリードと、反射面及び底面から構成された反射枠体とからなり、反射枠体は凹形状に形成され、その底面が四角形状であり、上面が円形状であり、底面から上面にかけてすり鉢形状の反射面が形成されたものである。これにより、全体構造を大きくすることなく半導体素子搭載部の面積を大きく確保することができる。   The present invention comprises a semiconductor element mounting portion, an inner lead, an outer lead, and a reflective frame body composed of a reflective surface and a bottom surface. The reflective frame body is formed in a concave shape, and the bottom surface has a quadrangular shape. The top surface is circular, and a mortar-shaped reflecting surface is formed from the bottom surface to the top surface. Thereby, a large area of the semiconductor element mounting portion can be ensured without increasing the overall structure.

さらに、面発光装置は、半導体素子搭載部と、インナーリードと、アウターリードと、反射面及び底面から構成された反射枠体とからなり、反射枠体が凹形状に形成され、反射枠体の底面が四角形状であり、反射枠体上面が円形状であり、底面から前記上面にかけてすり鉢形状の反射面が形成された半導体装置用リードフレームの半導体素子搭載部に半導体素子が載置され、半導体素子とインナーリードとを導通接続され、反射枠体凹形状内面に透光性樹脂が充填されている。これにより、全体構造を大きくすることなく半導体素子搭載部３の面積を有効に活用し半導体素子を搭載することができる。   Further, the surface light emitting device includes a semiconductor element mounting portion, an inner lead, an outer lead, and a reflective frame body constituted by a reflective surface and a bottom surface. The reflective frame body is formed in a concave shape, and the reflective frame body A semiconductor element is mounted on a semiconductor element mounting portion of a lead frame for a semiconductor device in which a bottom surface is a square shape, a top surface of a reflection frame is circular, and a mortar-shaped reflection surface is formed from the bottom surface to the top surface. The element and the inner lead are conductively connected, and the concave inner surface of the reflecting frame is filled with a translucent resin. As a result, the semiconductor element can be mounted by effectively utilizing the area of the semiconductor element mounting portion 3 without increasing the overall structure.

前記四角形状の反射枠体底面の角部は、丸みを帯びたコーナー部に形成されていることが好ましい。   It is preferable that the corners of the bottom surface of the rectangular reflection frame are formed at rounded corners.

前記反射枠体のすり鉢形状の反射面と前記インナーリード部との角度が、前記反射枠体の底面の直線部においては１１０゜〜１２５°の範囲であり、前記反射枠体の底面のコーナー部においては９５゜〜１１０°の範囲であることが好ましい。   The angle between the mortar-shaped reflective surface of the reflective frame and the inner lead portion is in the range of 110 ° to 125 ° at the straight portion of the bottom surface of the reflective frame, and the corner portion of the bottom surface of the reflective frame. Is preferably in the range of 95 ° to 110 °.

本発明の実施形態について図面を参照しながら説明する。図１Ａは本発明に係る半導体装置用リードフレームの平面図であり、図１Ｂは図１ＡのＩ−Ｉ線に沿った断面図である。図１Ａ、図１Ｂにおいて、１は金属板材をプレス加工又はエッチング加工などにより成型されたリードフレーム、２は半導体素子、３は半導体素子を銀ペーストなど（図示せず）を介して搭載される半導体素子搭載部、４はインナーリード部、５は半導体素子２とインナーリード部４とを導通接続するボンディングワイヤ、６は外部回路（図示せず）と接続するアウターリード、７は半導体素子２の平行方向への光の拡散を防ぐポリフタルアミド（ＰＰＡ）からなる反射枠体、８は反射枠体７の底面を構成する反射枠体底面、９は半導体素子２から発する光を効率良く外部に放射する反射面、１０は半導体素子及びボンディングワイヤ５を外部環境から保護したり、半導体素子１０２の光の色調変換などを行う熱硬化型エポキシ樹脂からなる透光性樹脂、１１は反射枠体７の上面である。   Embodiments of the present invention will be described with reference to the drawings. 1A is a plan view of a lead frame for a semiconductor device according to the present invention, and FIG. 1B is a cross-sectional view taken along the line II of FIG. 1A. 1A and 1B, 1 is a lead frame formed by pressing or etching a metal plate material, 2 is a semiconductor element, 3 is a semiconductor on which the semiconductor element is mounted via silver paste or the like (not shown). An element mounting portion, 4 is an inner lead portion, 5 is a bonding wire for electrically connecting the semiconductor element 2 and the inner lead portion 4, 6 is an outer lead for connecting to an external circuit (not shown), and 7 is a parallel of the semiconductor element 2. A reflection frame made of polyphthalamide (PPA) that prevents diffusion of light in the direction, 8 is a bottom surface of the reflection frame that constitutes the bottom surface of the reflection frame 7, and 9 efficiently radiates light emitted from the semiconductor element 2 to the outside. The reflecting surface 10 is made of a thermosetting epoxy resin that protects the semiconductor element and the bonding wire 5 from the external environment, and converts the color tone of light of the semiconductor element 102. Light resin, 11 is the top surface of the reflective frame 7.

以上の構成中、反射枠体底面８の反射面９が四角形状であり、反射枠体上面１１の反射面９が円形状であり、反射枠体底面８から反射枠体上面１１まで連続した曲面で構成されている点が従来例と異なる。   In the above configuration, the reflecting surface 9 on the bottom surface 8 of the reflecting frame has a quadrangular shape, the reflecting surface 9 on the top surface 11 of the reflecting frame has a circular shape, and a curved surface continuous from the bottom surface 8 to the top surface 11 of the reflecting frame. This is different from the conventional example.

以下各部材のディメンションを説明する。
(1)リードフレーム１の平面から見た外形の縦と横の長さ：縦２８ｍｍ、横６２ｍｍ
(2)半導体素子２の平面から見た外形の縦と横の長さ：縦１ｍｍ、横１ｍｍ
(3)半導体素子搭載部３の平面から見た外形の縦と横の長さ：縦１７ｍｍ、横１７ｍｍ
(4)インナーリード部４の平面から見た外形の縦と横の長さ：縦１０ｍｍ、横３ｍｍ
(5)半導体素子搭載部３の平面から見た外形の縦と横の長さ：縦１５ｍｍ、横１０ｍｍ
(6)インナーリード部４の断面から見た縦と横の長さ：縦１．５ｍｍ、横３ｍｍ
(7)半導体素子搭載部３の断面から見た外形の縦と横の長さ：縦１．５ｍｍ、横１０ｍｍ
(8)アウターリード６の平面から見た外形の縦と横の長さ：縦２０ｍｍ、横１５ｍｍ
(9)アウターリード６の断面から見た縦と横の長さ：縦１．５ｍｍ、横１５ｍｍ
(10)反射枠体７の平面から見た外形の縦と横の長さ：縦２８ｍｍ、横３２ｍｍ
(11)反射枠体７の断面図から見た縦と横の長さ：縦１８ｍｍ、横３２ｍｍ
(12)反射枠体底面８の平面から見た外形の縦と横の長さ：縦１７ｍｍ、横１７ｍｍ
(13)反射枠体底面８のコーナー部の半径（Ｒ）：１ｍｍ
フレームインサート成型されたリードフレーム１は光照射方向である前方を除き、半導体素子２の周囲を熱可塑性樹脂例えばＰＰＡで取り囲んで反射枠体７が形成され、さらに反射枠体７には光照射の効率を考慮された反射面９及び底部を構成する反射枠体底面８が形成されている。また、反射枠体底面８には半導体素子搭載部３及びインナーリード部４が形成されている。また、半導体素子２をリードフレーム１に形成された半導体素子搭載部３に載置し、ボンディングワイヤ５を介しインナーリード部４と接続されている。半導体素子２及びボンディングワイヤ５が構成されている反射枠体７の内側に透光性樹脂１０を注入したものであり、半導体素子２から横方向に出射される光も有効に活用して、光度を高めている。 The dimensions of each member will be described below.
(1) The vertical and horizontal lengths of the outer shape viewed from the plane of the lead frame 1: 28 mm long and 62 mm wide
(2) The vertical and horizontal lengths of the outer shape as viewed from the plane of the semiconductor element 2: 1 mm long and 1 mm wide
(3) The vertical and horizontal lengths of the outer shape viewed from the plane of the semiconductor element mounting portion 3: 17 mm long and 17 mm wide
(4) The vertical and horizontal lengths of the outer shape viewed from the plane of the inner lead part 4: 10 mm long and 3 mm wide
(5) Vertical and horizontal lengths of the outer shape viewed from the plane of the semiconductor element mounting portion 3: 15 mm long and 10 mm wide
(6) Vertical and horizontal lengths as seen from the cross section of the inner lead part 4: 1.5 mm length and 3 mm width
(7) Vertical and horizontal lengths of the outer shape viewed from the cross section of the semiconductor element mounting portion 3: 1.5 mm length and 10 mm width
(8) The vertical and horizontal lengths of the outer shape viewed from the plane of the outer lead 6: 20 mm long and 15 mm wide
(9) Vertical and horizontal lengths as seen from the cross section of the outer lead 6: 1.5 mm length and 15 mm width
(10) Vertical and horizontal lengths of the outer shape viewed from the plane of the reflective frame 7: 28 mm long and 32 mm wide
(11) Vertical and horizontal lengths as seen from the cross-sectional view of the reflective frame 7: 18 mm long and 32 mm wide
(12) Vertical and horizontal lengths of the outer shape viewed from the plane of the bottom surface 8 of the reflection frame: 17 mm long and 17 mm wide
(13) Radius (R) of the corner of the bottom face 8 of the reflection frame: 1 mm
The lead frame 1 formed by frame insert except the front in the light irradiation direction surrounds the periphery of the semiconductor element 2 with a thermoplastic resin such as PPA, and a reflection frame 7 is formed. Further, the reflection frame 7 is irradiated with light. The reflecting surface 9 and the reflecting frame bottom surface 8 constituting the bottom are formed in consideration of efficiency. A semiconductor element mounting portion 3 and an inner lead portion 4 are formed on the bottom surface 8 of the reflection frame. Further, the semiconductor element 2 is placed on the semiconductor element mounting portion 3 formed on the lead frame 1 and connected to the inner lead portion 4 via the bonding wire 5. The translucent resin 10 is injected into the inside of the reflection frame 7 in which the semiconductor element 2 and the bonding wire 5 are configured, and the light emitted from the semiconductor element 2 in the lateral direction is also effectively utilized to obtain a luminous intensity. Is increasing.

図２に反射面９の形状を模式的に示す。図２Ａは本実施の形態に係る半導体装置の断面図であり、図２Ｂは図２ＡのII−II線に沿った断面図、図２Ｃは図２ＡのIII−III線に沿った断面図、図２Ｄは図２ＡのIV−IV線に沿った断面図である。このとき、反射枠体底面８が四角形状に形成され、反射枠体上面１１に向かい連続した曲線で放射状に反射面９が形成されている。反射枠体底面の直線部においては、反射面９とインナーリード部４との角度θが１１０°〜１２５゜であり、反射枠体底面のコーナー部において同θは９５゜〜１１０°であった。これにより、全体構造を大きくすることなく半導体素子搭載部３の面積を１０％以上大きく確保することができる。さらに、本実施形態による反射枠体底面８はコーナー部の半径（Ｒ）が小さい四角形状であるため、半導体素子搭載部３の面積を有効に活用し半導体素子２を搭載することができる。   FIG. 2 schematically shows the shape of the reflecting surface 9. 2A is a cross-sectional view of the semiconductor device according to the present embodiment, FIG. 2B is a cross-sectional view taken along line II-II in FIG. 2A, and FIG. 2C is a cross-sectional view taken along line III-III in FIG. 2D is a cross-sectional view taken along line IV-IV in FIG. 2A. At this time, the bottom surface 8 of the reflection frame is formed in a quadrangular shape, and the reflection surface 9 is formed in a radial pattern with a continuous curve toward the top surface 11 of the reflection frame. The angle θ between the reflecting surface 9 and the inner lead portion 4 is 110 ° to 125 ° at the straight portion on the bottom surface of the reflecting frame body, and the same θ is 95 ° to 110 ° at the corner portion on the bottom surface of the reflecting frame body. . Thereby, the area of the semiconductor element mounting portion 3 can be ensured by 10% or more without increasing the overall structure. Furthermore, the bottom surface 8 of the reflecting frame according to the present embodiment is a quadrangular shape having a small radius (R) at the corner, so that the semiconductor element 2 can be mounted by effectively utilizing the area of the semiconductor element mounting portion 3.

以上、本発明による半導体装置用リードフレームとそれを用いた面発光装置の一実施形態について説明したが、本発明に思想に逸脱しない限り適宜変更可能である。   As mentioned above, although one embodiment of the lead frame for a semiconductor device and the surface light emitting device using the same according to the present invention has been described, it can be appropriately changed without departing from the idea of the present invention.

反射面の反射効率改善として有用であり、特に面発光装置に適している。   This is useful for improving the reflection efficiency of the reflection surface, and is particularly suitable for a surface light emitting device.

図１Ａは本発明の実施の形態における面発光装置の平面図、図１Ｂは図１ＡのＩ−Ｉ線に沿った断面図。FIG. 1A is a plan view of a surface light emitting device according to an embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along the line II of FIG. 1A. 図２Ａは本発明の実施の形態における面発光装置の断面図、図２Ｂは図２ＡのII−II線に沿った断面図、図２Ｃは図２ＡのIII−III線に沿った断面図、図２Ｄは図２ＡのIV−IV線に沿った断面図。2A is a cross-sectional view of the surface emitting device according to the embodiment of the present invention, FIG. 2B is a cross-sectional view taken along line II-II in FIG. 2A, and FIG. 2C is a cross-sectional view taken along line III-III in FIG. 2D is a cross-sectional view taken along line IV-IV in FIG. 2A. 図３Ａは従来例１の面発光装置の平面図、図３Ｂは図１ＡのＶ−Ｖ線に沿った断面図。3A is a plan view of the surface light emitting device of Conventional Example 1, and FIG. 3B is a cross-sectional view taken along the line VV of FIG. 1A. 図４Ａは従来例１の面発光装置の断面図、図４Ｂは図４ＡのVI−VI線に沿った断面図、図４Ｃは図４ＡのVII−VII線に沿った断面図、図４Ｄは図４ＡのVIII−VIII線に沿った断面図。4A is a cross-sectional view of the surface light emitting device of Conventional Example 1, FIG. 4B is a cross-sectional view taken along line VI-VI in FIG. 4A, FIG. 4C is a cross-sectional view taken along line VII-VII in FIG. Sectional drawing along the VIII-VIII line of 4A. 図５Ａは従来例２の面発光装置の平面図、図５Ｂは図５ＡのIX−IX線に沿った断面図。5A is a plan view of the surface light emitting device of Conventional Example 2, and FIG. 5B is a cross-sectional view taken along line IX-IX in FIG. 5A. 図６Ａは従来例２の面発光装置の断面図、図６Ｂは図６ＡのＸ−Ｘ線に沿った断面図、図６Ｃは図６ＡのXI−XI線に沿った断面図、図６Ｄは図６ＡのXII−XII線に沿った断面図。6A is a cross-sectional view of the surface light emitting device of Conventional Example 2, FIG. 6B is a cross-sectional view along line XX in FIG. 6A, FIG. 6C is a cross-sectional view along line XI-XI in FIG. Sectional drawing along the XII-XII line of 6A.

符号の説明Explanation of symbols

1,101,201 リードフレーム
2,102,202 半導体素子
3,103,203 半導体素子搭載部
4,104,204 インナーリード部
5,105,205 ボンディングワイヤ
6,106,206 アウターリード
7,107,207 反射枠体
8,108,208 反射枠体底面
9,109,209 反射面
10,110,210 透光性樹脂
11,111,211 反射枠体上面 1,101,201 Lead frame
2,102,202 Semiconductor element
3,103,203 Semiconductor device mounting part
4,104,204 Inner lead
5,105,205 Bonding wire
6,106,206 Outer lead
7,107,207 Reflective frame
8,108,208 Reflective frame bottom
9,109,209 Reflective surface
10,110,210 Translucent resin
11,111,211 Reflective frame top surface

Claims (8)

半導体素子搭載部と、インナーリードと、アウターリードと、反射面及び底面から構成された反射枠体とからなる半導体装置用リードフレームであって、
前記反射枠体が凹形状に形成され、前記反射枠体の底面が四角形状であり、前記反射枠体上面が円形状であり、前記底面から前記上面にかけてすり鉢形状の反射面が形成されたことを特徴とする半導体装置用リードフレーム。 A lead frame for a semiconductor device comprising a semiconductor element mounting portion, an inner lead, an outer lead, and a reflective frame composed of a reflective surface and a bottom surface,
The reflection frame is formed in a concave shape, the bottom surface of the reflection frame is square, the top surface of the reflection frame is circular, and a mortar-shaped reflection surface is formed from the bottom surface to the top surface. A lead frame for a semiconductor device. 前記反射枠体が熱可塑性樹脂からなる請求項１記載の半導体装置用リードフレーム。The lead frame for a semiconductor device according to claim 1, wherein the reflection frame body is made of a thermoplastic resin. 前記四角形状の反射枠体底面の角部は、丸みを帯びたコーナー部に形成されている請求項１または２に記載の半導体装置用リードフレーム。   3. The lead frame for a semiconductor device according to claim 1, wherein a corner portion of the bottom surface of the rectangular reflection frame is formed in a rounded corner portion. 前記反射枠体のすり鉢形状の反射面と前記インナーリード部との角度が、前記反射枠体の底面の直線部においては１１０°〜１２５°の範囲であり、前記反射枠体の底面のコーナー部においては９５°〜１１０°の範囲である請求項１または２に記載の半導体装置用リードフレーム。   The angle between the mortar-shaped reflective surface of the reflective frame and the inner lead portion is in the range of 110 ° to 125 ° at the straight portion of the bottom surface of the reflective frame, and the corner portion of the bottom surface of the reflective frame The lead frame for a semiconductor device according to claim 1, wherein the lead frame is in a range of 95 ° to 110 °. 半導体素子搭載部と、インナーリードと、アウターリードと、反射面及び底面から構成された反射枠体とからなる半導体装置用リードフレームを含む面発光装置であって、
前記反射枠体が凹形状に形成され、前記反射枠体の底面が四角形状であり、前記反射枠体上面が円形状であり、前記底面から前記上面にかけてすり鉢形状の反射面が形成された半導体装置用リードフレームの半導体素子搭載部に半導体素子が載置され、前記半導体素子と前記インナーリードとが導通接続され、前記反射枠体凹形状内面に透光性樹脂が充填されたことを特徴とする面発光装置。 A surface light emitting device including a semiconductor device lead frame comprising a semiconductor element mounting portion, an inner lead, an outer lead, and a reflective frame body constituted by a reflective surface and a bottom surface,
The semiconductor in which the reflective frame is formed in a concave shape, the bottom surface of the reflective frame is square, the top surface of the reflective frame is circular, and a mortar-shaped reflective surface is formed from the bottom surface to the top surface A semiconductor element is mounted on a semiconductor element mounting portion of a lead frame for an apparatus, the semiconductor element and the inner lead are conductively connected, and a translucent resin is filled into the concave inner surface of the reflective frame. Surface emitting device. 前記反射枠体が熱可塑性樹脂からなる請求項５記載の半導体装置用リードフレーム。The lead frame for a semiconductor device according to claim 5, wherein the reflection frame body is made of a thermoplastic resin. 前記四角形状の反射枠体底面の角部は、丸みを帯びたコーナー部に形成されている請求項６に記載の面発光装置。 The surface light-emitting device according to claim 6 , wherein corners of the bottom surface of the rectangular reflection frame are formed at rounded corners. 前記反射枠体のすり鉢形状の反射面と前記インナーリード部との角度が、前記反射枠体の底面の直線部においては１１０°〜１２５°の範囲であり、前記反射枠体の底面のコーナー部においては９５°〜１１０°の範囲である請求項７に記載の面発光装置。 The angle between the mortar-shaped reflective surface of the reflective frame and the inner lead portion is in the range of 110 ° to 125 ° at the straight portion of the bottom surface of the reflective frame, and the corner portion of the bottom surface of the reflective frame The surface light-emitting device according to claim 7 , which has a range of 95 ° to 110 °.
JP2003389697A 2003-11-19 2003-11-19 Lead frame for semiconductor device and surface light emitting device using the same Expired - Lifetime JP4231391B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003389697A JP4231391B2 (en) 2003-11-19 2003-11-19 Lead frame for semiconductor device and surface light emitting device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003389697A JP4231391B2 (en) 2003-11-19 2003-11-19 Lead frame for semiconductor device and surface light emitting device using the same

Publications (2)

Publication Number Publication Date
JP2005150624A JP2005150624A (en) 2005-06-09
JP4231391B2 true JP4231391B2 (en) 2009-02-25

Family

ID=34696358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003389697A Expired - Lifetime JP4231391B2 (en) 2003-11-19 2003-11-19 Lead frame for semiconductor device and surface light emitting device using the same

Country Status (1)

Country Link
JP (1) JP4231391B2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US8669572B2 (en) 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
JP4817820B2 (en) * 2005-12-01 2011-11-16 スタンレー電気株式会社 LED package, light emitting device, and method of manufacturing LED package
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
US8748915B2 (en) 2006-04-24 2014-06-10 Cree Hong Kong Limited Emitter package with angled or vertical LED
US7635915B2 (en) 2006-04-26 2009-12-22 Cree Hong Kong Limited Apparatus and method for use in mounting electronic elements
JP4830768B2 (en) * 2006-05-10 2011-12-07 日亜化学工業株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
US8735920B2 (en) 2006-07-31 2014-05-27 Cree, Inc. Light emitting diode package with optical element
US8367945B2 (en) 2006-08-16 2013-02-05 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
EP2149920A1 (en) 2007-05-17 2010-02-03 Showa Denko K.K. Semiconductor light-emitting device
USD634863S1 (en) 2008-01-10 2011-03-22 Cree Hong Kong Limited Light source of light emitting diode
US8791471B2 (en) 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US8564004B2 (en) 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
WO2014024371A1 (en) * 2012-08-10 2014-02-13 パナソニック株式会社 Semiconductor light-emitting device
US8941130B2 (en) 2012-08-10 2015-01-27 Panasonic Intellectual Property Management Co., Ltd. Semiconductor light-emitting device
JP5398939B1 (en) * 2012-08-10 2014-01-29 パナソニック株式会社 Semiconductor light emitting device
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
US10622522B2 (en) 2014-09-05 2020-04-14 Theodore Lowes LED packages with chips having insulated surfaces

Also Published As

Publication number Publication date
JP2005150624A (en) 2005-06-09

Similar Documents

Publication Publication Date Title
JP4231391B2 (en) Lead frame for semiconductor device and surface light emitting device using the same
US9203006B2 (en) Light emitting device
KR100851636B1 (en) Surface mounting light emitting diode device
US7009285B2 (en) Optoelectronic semiconductor component
US20070194333A1 (en) Light emitting diode package and method of manufacturing the same
TWI435467B (en) Light emitting diode package
JP2005086051A (en) Light emitting device
KR20070103319A (en) Structure for sealing light-emitting diode chip and method thereof
KR101374894B1 (en) Double-side emitting type light emitting diode package
US20150076541A1 (en) Light-emitting device
JP3790199B2 (en) Optical semiconductor device and optical semiconductor module
JP4967347B2 (en) Manufacturing method of linear light source and semiconductor light emitting unit
JP4679917B2 (en) Semiconductor light emitting device
JP2007266246A (en) Led module
KR101121728B1 (en) Led package with heat radiating structure
JP3974154B2 (en) Optical semiconductor module and optical semiconductor device
KR100839122B1 (en) Side view type led lamp and its fabricating method and light emittid apparatus comprising the same
US8581278B2 (en) Light-emitting diode packaging structure
JP2007116078A (en) Housing of light emitting element
JP6064415B2 (en) Light emitting device
KR100609783B1 (en) Side view type led package
KR100754884B1 (en) Light-emitting device and method of manufacturing the same
KR20080089040A (en) Light emitting diode package
KR20050101737A (en) Light emitting diode package
KR100761388B1 (en) Luminescent diode lamp

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050621

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080328

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081113

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081205

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4231391

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111212

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111212

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121212

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121212

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131212

Year of fee payment: 5

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term