JP4216237B2 - Manufacturing method of thermoelectric chemical sensor - Google Patents

Description

The present invention relates to a sensor device that uses a thermopile with a plurality of thermocouples and converts a chemical reaction occurring at the end face thereof into an electrical signal.

  A thermocouple electrically connects two kinds of metals or thermoelectric semiconductors having different polarities, and generates a voltage by giving a temperature difference between both ends. By detecting this voltage, it is generally used as a temperature sensor. Also, it is generally called thermopile that uses multiple thermocouples in series and amplifies the heat-electric conversion characteristics, and is used as a non-contact thermometer that detects infrared rays because of its high sensitivity. It has been done.

  In this way, since the thermocouple or thermopile can obtain a voltage output corresponding to the temperature difference between both ends, it is possible to sense the heat source by generating a temperature difference not only with infrared rays but also with other heat sources. That can be easily guessed.

  One utilization method is a gas sensor. As a use of a thermocouple for a gas sensor, one using a thin film thermocouple or a thermopile has been reported (see, for example, Patent Document 1).

  FIG. 10 shows the structure of a conventional thermoelectric gas sensor. A glass substrate is provided with a plurality of thermocouples each including an n-type columnar element 10 made of an n-type FeSi film and a p-type columnar element 11 made of a p-type FeSi film. A reaction layer 30 is formed on the hot junction side of the thermocouple with an alumina film containing a platinum catalyst through an alumina film.

When this gas sensor is placed in a constant temperature environment and brought into contact with a gas containing a combustible gas, a gas combustion reaction occurs on the surface of the platinum catalyst film. Heat is generated by the combustion reaction of the gas, and the temperature rises in the vicinity of the platinum catalyst film. In other words, this temperature rise causes a temperature difference with the cold junction where the platinum catalyst film is not formed, and by detecting the voltage associated with the temperature difference, the concentration can be determined depending on the presence of gas and the voltage level. Can do.
JP-A-5-10901 (FIG. 1)

  A conventional gas sensor using a thermocouple has less danger of disconnection or the like and can be stably measured as compared with other detection methods such as a resistance detection method using a platinum wire. Further, the use of a thermocouple has an excellent point that a direct voltage output can be obtained and the detection circuit is simplified.

  However, the conventional thermoelectric gas sensor has several problems. One of them is that the material is a thin film and is formed on a substrate. For example, the glass substrate needs to be at least 200 μm, but the film is several μm at most. For this reason, the heat conduction and heat capacity on the substrate side are much larger than those of the thermocouple film, and much heat generated by the catalytic reaction diffuses to the substrate side, so that the temperature difference does not easily occur on the thermoelectric thin film and it is difficult to increase the sensitivity.

In order to increase the sensitivity, the catalyst region may be expanded to increase the reaction amount to increase the temperature, and the thermocouple may increase the temperature difference by increasing the distance between the hot junction and the cold junction. However, since the conventional example is formed by laminating thin films, if the catalyst region is widened, an overlapping portion with the thermocouple film becomes large, and the effective length of the thermocouple is shortened. Therefore, it is difficult to improve sensitivity structurally. Furthermore, since the conventional thermocouple is thin, the resistance value is increased and the S / N is decreased.

    Therefore, an object of the present invention is to provide a thermoelectric chemical sensor capable of solving the conventional problems and capable of detecting with higher sensitivity.

In order to achieve the above object, in the method for manufacturing a thermoelectric chemical sensor of the present invention, a protective layer is formed by combining a plurality of n-type columnar elements made of n-type thermoelectric semiconductors and a plurality of p-type columnar elements made of p-type thermoelectric semiconductors. A wiring electrode made of a metal material by plating on the end surfaces of the n-type columnar element and the p-type columnar element to electrically connect the n-type columnar element and the p-type columnar element. And a step of providing a reaction layer made of a metal catalyst material on the surface of the wiring electrode, which is a catalyst substance that induces a chemical reaction with a detection target or a chemical substance that reacts directly with the detection target, by plating. Have

It is desirable to have a step of dissolving the protective layer immediately before or after the step of providing the reaction layer.

A step of pre-Symbol electrically connected to form the wiring electrode and the n-type pillar element and the p-type pillar-shaped element, by connecting to the n-type pillar element by half of the p-type pillar-shaped element in series Preferably, the first sensor unit and the second sensor unit are formed, and the step of providing the reaction layer is a step of providing only the first sensor unit.

According to the manufacturing method of the present invention , a plurality of n-type columnar elements and p-type columnar elements are provided with wiring electrodes and reaction layers on both end faces, so that the heat generated on the end faces is not diffused outside and the temperature difference is A large thermoelectric sensor with high sensitivity can be obtained. Further, since the reaction region is on the end face of the thermocouple, an effective reaction area can be widened without changing the length of the thermocouple that generates a temperature difference.

  Hereinafter, the optimal embodiment of the thermoelectric chemical sensor of the present invention will be described with reference to the drawings. First, FIG. 1 and FIG. 2 show a side view and a perspective view of the thermoelectric chemical sensor of the present invention.

  As shown in FIG. 1, in the thermoelectric chemical sensor of the present invention, a plurality of n-type columnar elements 10 made of n-type thermoelectric semiconductors and a plurality of p-type columnar elements 11 made of p-type thermoelectric semiconductors are alternately arranged. Here, a BiSeTe alloy is used for the n-type columnar element 10, and a BiSbTe alloy is used for the p-type columnar element 11, respectively. Each columnar element has a shape of 90 μm × 110 μm × 1.5 mm and a very large aspect ratio. The space between the pillars is about 10 μm. Here, a BiTe-based material is used as the thermoelectric semiconductor material, but for example, PbTe-based, SiGe-based, FeSi-based, CoSb-based, and other materials that can be processed into a bulk shape can be used. You only have to choose the right one

Wiring electrodes 20 made of a metal film are provided on both end surfaces of the n-type columnar element 10 and the p-type columnar element 11 that become the hot junction 21 and the cold junction 22. Here, the material of the wiring electrode 20 is nickel / gold 2
A layer film is used. The wiring electrode 20 basically has a structure in which one n-type columnar element 10 and one p-type columnar element 11 adjacent to each other are electrically connected to each other at the end face of the column. The film thickness of the wiring electrode 20 is as very thin as 1 μm to 3 μm at most, but this level is sufficient because the pillar is thin.

  Further, a reaction layer 30 is provided on the wiring electrode 20. The reaction layer 30 is made of a material that induces a chemical reaction of a substance, such as a metal catalyst, an enzyme, an antigen, an antibody, DNA, or RNA, or a material that directly reacts.

  First, the thermoelectric chemical sensor of the present invention was used as a gas sensor. When a gas sensor is used, a metal catalyst is used for the reaction layer 30. Here, the detection of hydrogen gas was mainly assumed, and a platinum film was used as the metal catalyst. The platinum film is formed in direct contact with the wiring electrode 20 and has a thickness of about 0.2 μm.

  A thermoelectric chemical sensor in which a platinum film was formed as the reaction layer 30 was mounted on a base 50 and used as shown in FIG. The base 50 is basically made of an insulating good heat conductor, for example, a ceramic material, and is provided with two base electrodes 51.

  At both ends of the continuous thermopile included in the thermoelectric chemical sensor, there is a columnar element that is free at one end, where the extraction electrode 40 exists. Therefore, the extraction electrode 40 and the base electrode 51 are connected to the base 50 so as to face each other. The lead electrode 40 and the base electrode 51 are connected by a bonding material 41 made of solder or a conductive adhesive, and the other wiring electrodes 20 are fixed by a fixing member 42 made of a heat conductive adhesive or the like. 50 is fixed. A lead wire 60 for signal extraction is connected to the base electrode 51.

  When a gas containing hydrogen gas was brought into contact with this sensor, a voltage of the order of several tens of mV was generated between the lead wires 60, and it was found that hydrogen could be detected with higher sensitivity than before. This is considered to be obtained because the combustion reaction of hydrogen occurred on the platinum membrane catalyst surface and the temperature of the hot junction of the thermocouple increased. Furthermore, it has been found that the output voltage varies proportionally with the concentration of hydrogen gas, and the quantity of hydrogen gas can be determined.

  Then, the manufacturing method of the thermoelectric chemical sensor of this invention is demonstrated. First, as shown in FIG. 4, the vertical grooves 1 are formed in the n-type thermoelectric semiconductor block and the p-type thermoelectric semiconductor block, and the n-type comb-tooth element 3 and the p-type comb-tooth element 4 are left leaving the vertical partition wall 2. Make it. At this time, in the n-type comb-tooth element 3 and the p-type comb-tooth element 4, the pitch of the vertical grooves 1 is the same, and the vertical groove 1 width of one block is larger than the vertical partition wall 2 width of the other block. Like that. Here, a BiSeTe alloy sintered body was used as the n-type thermoelectric semiconductor, and a BiSbTe alloy sintered body was used as the p-type thermoelectric semiconductor. The processing was performed using a wire saw, and the width of the vertical groove 1 was 110 μm and the width of the vertical partition wall 2 was 90 μm.

  Subsequently, the n-type comb-teeth element 3 and the p-type comb-teeth element 4 are combined and integrated by inserting the mating vertical partition wall 2 into the vertical groove 1. FIG. 5 shows a combination of both. The combined two comb-tooth elements 5 are formed as an integrated comb-tooth element 5 by providing a protective layer 70 at the fitting portion and fixing them. For the protective layer 70, a fluid acrylic adhesive is used to penetrate and fill the gaps between the vertical partition walls 2 of the combined comb elements. After that, the adhesive is cured by holding it for a predetermined time and the partition walls are fixed to each other, but may be heated as necessary.

Thereafter, as shown in FIG. 6, the combined comb element 5 is processed again so as to form the horizontal grooves 6 and the horizontal partition walls 7 so as to be orthogonal to the vertical grooves. Then, as in the case of the first combination, the lateral grooves are filled and fixed with an acrylic adhesive, and the protective layer 70 is formed again. By forming the lateral grooves, the thermoelectric semiconductor is processed into a columnar shape, and the number of thermocouples can be increased. Incidentally, the horizontal groove 6 is 90 μm, and the horizontal partition wall 7 is 110 μm.

  Subsequently, as shown in FIG. 7, the integrated comb element 5 having the protective layer 70 formed thereon is ground and removed by grinding. As a result, the n-type columnar elements 10 and the p-type columnar elements 11 are alternately arranged.

    Thereafter, the processed surface is etched several microns using an etching solution such as nitric acid or hydrochloric acid in order to remove the work-affected layer on the ground surface. By this etching, a clean surface appears on the end face of the column, and micro unevenness is generated. Thereby, the adhesion of the wiring electrode 20 described later is improved by the anchor effect. Furthermore, since the micro unevenness is also transferred to the reaction layer 30 to be subsequently formed, the surface area of the reaction layer 30 is increased, the reaction efficiency is improved, and the sensor performance is improved.

    Subsequently, the wiring electrode 20 (hidden in the figure) is formed as shown in FIG. 8 in such a manner that the n-type columnar element 10 and the p-type columnar element 11 are wired, and then the reaction layer 30 is formed. .

    First, an opening having the shape of a desired wiring pattern is provided in a metal plate made of nickel, and alignment is performed so that end faces of the n-type columnar element 10 and the p-type columnar element 11 adjacent to each other can be seen from the opening. Fix it. Installed in a vacuum evaporation system and deposits nickel or palladium slightly as a plating catalyst. This method is generally called a mask vapor deposition method. Here, the vapor deposition layer does not need to cover the two adjacent end faces of the columnar elements, and may be slightly smaller as long as the two can be electrically connected.

  Following the vapor deposition step, the film is immersed in an electroless nickel plating solution to form a nickel film. Since the nickel film grows by using nickel or palladium formed by vapor deposition as reaction nuclei, it is first formed on the vapor deposition layer. Further, a nickel film is also formed on the exposed end surfaces of the n-type columnar element 10 and the p-type columnar element 11 in contact with the vapor deposition metal. When sufficient plating thickness cannot be ensured only by electroless plating, electrolytic nickel plating is further performed. The total thickness of nickel plating is 1 to 3 μm.

  The nickel film is applied for adhesion to the thermoelectric semiconductor and for preventing diffusion of impurities, and gold plating is performed by electrolytic plating after nickel plating. Gold plating is necessary to stabilize the growth of the platinum film formed in the subsequent process. Following the gold plating, a platinum film that becomes the reaction layer 30 is also formed using the electrolytic plating method. At this time, the wiring electrode 20 on one side which becomes the cold junction side of the thermocouple is protected with a masking material such as resin. As a result, the platinum film is deposited only on the hot junction side, and a chemical reaction can be caused only on the hot junction side. Here, the platinum film is formed to have a thickness of about 0.2 μm.

  This completes the thermoelectric chemical sensor to be a gas sensor. However, when the sensor is actually used, it is easier to handle it if it is mounted on the base 50 in advance as shown in FIG. A base electrode 51 is formed on the base 50 using a material having good thermal conductivity such as ceramics. The base electrode 51 is made of a thin film material such as titanium / copper / gold, and is formed on the base 50 by sputtering or the like and patterned into a predetermined shape.

A conductive adhesive or solder is applied as a bonding material 41 to the extraction electrodes 40 at both ends of the continuous thermopile constituting the sensor, and the extraction electrodes 40 and the base electrode 51 are aligned so as to face each other. Thereafter, the bonding is performed by maintaining the temperature at a predetermined temperature and curing the conductive adhesive or melting the solder. Then, a portion between the wiring electrode 20 other than the extraction electrode 40 and the base 50 is infiltrated and solidified with an insulating heat conductive adhesive or the like as the fixing member 42 to increase the mounting strength and heat of the cold junction portion. Can be smoothly diffused to the base 50. Here, when the fixing member 42 covers all the wiring electrodes 20 on the cold junction side, the platinum film described above may be formed also on the cold junction side.

    Furthermore, in order to increase the sensitivity of the thermoelectric chemical sensor of the present invention, the protective layer 70 filled between the columns is dissolved in the middle of the manufacturing process. This can be done by immersing the entire sensor in an organic solvent such as acetone and applying ultrasonic waves. This step is preferably performed after the sensor is mounted on the base 50, but can be performed immediately after the wiring electrode 20 is formed by plating or immediately after the reaction layer 30 is formed.

  Further, although some internal diffusion of heat increases, it is desirable to leave the protective layer 70 undissolved when it is necessary to increase the mechanical strength against the impact of the sensor. However, in that case, it is preferable to use an epoxy resin excellent in heat resistance and chemical resistance for the protective layer 70.

  With the above manufacturing process, the thermoelectric chemical sensor of the present invention that functions as a hydrogen gas sensor is completed. In this manufacturing process, by utilizing fine processing using a wire saw, a very large number of thermocouples can be integrated per unit area, and a highly sensitive sensor can be constructed.

  The thermoelectric chemical sensor of the present invention has the same structure as a normal Peltier element, but the wiring electrode 20 can be directly joined to a columnar thermocouple without using soldering or the like. Therefore, the wiring is exposed, and the reaction layer 30 can be further in direct contact with the wiring electrode 20. Further, since the pillars are thin, the wiring electrode 20 can also be made thin, so that the reaction heat can be transmitted to the hot junction of the thermocouple without loss.

  Further, since the wiring electrode 20 is directly formed on the end face of the column by plating, a catalytic metal can be continuously formed, and a stable reaction layer 30 with good adhesion can be formed.

  Next, a sensor structure and manufacturing method for further improving the resolution of the thermoelectric chemical sensor of the present invention will be described. FIG. 9 shows the structure of the sensor of this embodiment.

  As shown in FIG. 9, the chemical sensor of this embodiment is divided into a first sensor unit 80 and a second sensor unit 81. The thermocouple materials, shapes, and logarithms included in both sensor parts are exactly the same, but the wiring electrode 20 is a part that serializes only the first sensor part 80 and a part that serializes only the second sensor part 81. The patterns are divided. The reaction layer 30 is formed only on the wiring electrode 20 of the first sensor unit 80, and the wiring electrode 20 is exposed in the second sensor unit 81.

  Although not shown in the drawing, by taking the structure of the present embodiment, two extraction electrodes 40 are owned by the first sensor unit 80 and the second sensor unit 81, respectively, so that there are four locations in total. The same number of four base electrodes 51 are also provided at 50 and are joined to each other.

In the thermoelectric chemical sensor of the present embodiment, the first sensor unit 80 and the second sensor unit 81 included therein basically have the same structure, and therefore respond exactly the same to an external temperature change. However, when a measurement object (in the case of a gas sensor using platinum for the reaction layer 30, the target is hydrogen) is introduced into the sensor, the reaction occurs only in the first sensor unit 80, and only the first sensor unit 80 is hydrogen. A voltage output according to the quantity is obtained. On the other hand, the second sensor unit 81 only responds to other disturbances. Therefore, by subtracting the output of the second sensor unit 81 from the output of the first sensor unit 80, that is, by converting the difference as an output, it is possible to remove disturbance factors other than the temperature change inherent to the object, High sensitivity measurement is possible.

  Then, the manufacturing method of the thermoelectric chemical sensor of a present Example is demonstrated. Basically, processes such as processing of the longitudinal groove 1, creation of the integrated comb element 5 by combination and fixation, processing of the lateral groove 6 and formation of the protective layer 70, and grinding of the upper and lower surfaces are the same as in the first embodiment. . Further, although the method for forming the wiring electrode 20 is the same as that in the first embodiment, the metal mask for vapor deposition is designed so that the first sensor unit 80 and the second sensor unit are formed. That is, the first sensor unit 80 and the second sensor unit 81 are simultaneously formed by vapor deposition using the thermocouple group that is originally adjacent to each other in the processing step.

  The subsequent formation method of the reaction layer 30 is also the same as that of the first embodiment, but the reaction layer 30 is energized only in the first sensor unit 80 so that the reaction layer 30 is formed only in the first sensor unit 80. The platinum film is plated.

  In the manufacturing method of the present embodiment, the first sensor unit 80 and the second sensor unit 81 are formed using the same material and using the same process at the same time. Since the basic sensor capability of the sensor unit 81 can be made the same, the difference output is purely a signal from the measurement object, and the noise portion can be greatly reduced.

  Next, in the present invention, an example in which a thermoelectric chemical sensor is used as a biosensor for measuring a biological substance or the like will be described. The sensor structure of this embodiment is the same as that shown in FIG. 1 or 2, and is basically the same as that of the first embodiment. As one of them, we tried to apply to glucose sensor that measures glucose. In the case of a glucose sensor, a glucose oxidase film is used for the reaction layer 30. The glucose oxidase membrane used here has a structure in which glucose oxidase is included in a membrane made of a polymer material.

    The thermoelectric chemical sensor as the glucose sensor is also mounted on the base 50 as shown in FIG. Then, at least a part of the reaction layer 30 of this sensor is immersed in the aqueous solution. And after the temperature fluctuation of aqueous solution becomes small, the sample containing glucose is mixed with aqueous solution. Glucose is oxidized and converted to gluconic acid when it contacts glucose oxidase contained in the reaction layer 30, but the presence of glucose can be detected by generating heat during the reaction process and increasing the temperature of the hot junction.

    In addition, when a thermoelectric chemical sensor is used as a biosensor, there is a tendency that a difference in temperature is difficult to take because the reaction heat is small and it is often used in a solution. Therefore, when using as a biosensor, as described in the previous embodiment, the thermoelectric chemical sensor having the first sensor unit 80 and the second sensor unit 81 shown in FIG. Detecting this can reduce noise and make it easier to use. Naturally, the reaction layer 30 such as glucose oxidase is provided only in the first sensor unit 80 at that time.

  Then, the manufacturing method of the thermoelectric chemical sensor of a present Example is demonstrated. Basically, processes such as processing of the vertical groove 1, creation of the integrated comb element 5 by combination and fixation, processing of the horizontal groove 6 and formation of the protective layer 70, grinding of the upper and lower surfaces, formation of the wiring electrode 20, etc. are performed. Similar to Example 1.

Next, the reaction layer 30 is formed. First, glucose oxidase is made into an aqueous solution. Polyvinyl alcohol is added to this to form a gel. This gel is spread on the wiring surface of the chemical sensor and is formed into a film with a certain thickness using a squeegee or the like. After drying, the reaction layer 30 containing glucose oxidase can be formed by crosslinking polyvinyl alcohol by light irradiation or heating. In the method of physically expanding the film in this way, it is better that the wiring surface is uniform. Therefore, an epoxy resin is used for the protective layer 70 and the final dissolution process of the protective layer 70 is not performed. Is desirable.

  Another method for forming the reaction layer 30 is also possible. First, an aqueous solution in which glucose oxidase is dissolved is prepared, and a paint obtained by partially protonating a polyamine resin is added thereto. A polyamine resin is coated on the wiring electrode 20 by immersing the thermoelectric chemical sensor in this solution and negatively charging the counter electrode. This is a so-called electrodeposition coating method, and glucose oxidase dissolved in the solution is also included in the paint, so that the reaction layer 30 containing glucose oxidase can be formed. Since this method uses an electrochemical method, the reaction layer 30 can be formed only on the wiring electrode 20, and therefore, a step of dissolving the protective layer 70 can also be used.

  In addition, the end of an organic sulfur compound such as alkanethiol can be bonded to an enzyme and directly bonded to the wiring electrode 20 using a specific bonding reaction between gold and sulfur. In this case, the uppermost surface of the wiring electrode 20 needs to be covered with a gold plating film.

  Here, glucose oxidase is used as the enzyme, but it is of course possible to measure the corresponding substrate using another enzyme. For example, many other enzymes can be used as needed, such as lactate dehydrogenase, cholesterol oxidase, uricase, catalase, uriase.

  Further, as the reaction layer 30, in addition to enzymes, antigens or antibodies, DNA, RNA, and the like can be used. By using either the antigen or the antibody as the reaction layer 30, the corresponding partner can be detected by the exotherm of the antigen-antibody reaction. In addition, the reaction layer 30 is formed by immobilizing single-stranded DNA or RNA on the wiring electrode 20, and heat generated when binding to DNA or RNA having the same base sequence can be captured. The reaction layer 30 such as DNA can be formed by coating the surface of the wiring electrode 20 with an organic compound containing an amino group, for example, so as to have a positive charge, and electrostatically bonding the negatively charged DNA thereto. it can.

  As described above, the thermoelectric chemical sensor of the present invention can be used as a biosensor for sensing a biological material by using an organic material such as an enzyme in the reaction layer 30. In addition, since the reaction heat is directly sensed, a simpler sensor than conventional ones can be constructed, and there is no need to use a secondary reaction process for labeling or detecting a fluorescent substance that complicates the process.

    Finally, in the thermoelectric chemical sensor of the present invention, the reaction layer 30 is provided on the warm junction 21 side. However, the expressions “hot junction 21” and “cold junction 22” described here are only used to clarify the difference between the upper and lower columns, and basically the temperature above and below the thermoelectric element is higher. Therefore, there is no problem even if the hot junction 21 side operates at a lower temperature than the cold junction 22 side.

It is a side view which shows the structure of the thermoelectric chemical sensor in embodiment of this invention. It is a perspective view which shows the structure of the thermoelectric chemical sensor in embodiment of this invention. It is a side view which shows the structure at the time of mounting the thermoelectric chemical sensor in embodiment of this invention on the base. It is a perspective view which shows the manufacturing method of the thermoelectric type chemical sensor in embodiment of this invention. It is a perspective view which shows the manufacturing method of the thermoelectric type chemical sensor in embodiment of this invention. It is a perspective view which shows the manufacturing method of the thermoelectric type chemical sensor in embodiment of this invention. It is a perspective view which shows the manufacturing method of the thermoelectric type chemical sensor in embodiment of this invention. It is a perspective view which shows the manufacturing method of the thermoelectric type chemical sensor in embodiment of this invention. It is a perspective view which shows the structure of the thermoelectric chemical sensor in embodiment of this invention. It is a top view which shows the structure of the conventional thermoelectric type chemical sensor.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vertical groove 2 Vertical partition 3 n-type comb-tooth element 4 p-type comb-tooth element 5 Integrated comb-tooth element 6 Horizontal groove 7 Horizontal partition 10 n-type columnar element 11 p-type columnar element 20 Wiring electrode 21 Hot junction 22 Cold junction 30 Reaction Layer 40 Lead electrode 41 Bonding material 42 Fixing member 50 Base 51 Base electrode 60 Lead wire 70 Protective layer 80 First sensor part 81 Second sensor part

Claims (3)

fixing a plurality of n-type columnar elements made of an n-type thermoelectric semiconductor and a plurality of p-type columnar elements made of a p-type thermoelectric semiconductor via a protective layer;
Wiring current made of a metal material on the end surfaces of the n-type columnar element and the p-type columnar element by plating.
Forming a pole to electrically connect the n-type columnar element and the p-type columnar element;
Catalytic substance that induces a chemical reaction with the object to be detected, consisting of a metal catalyst material on the surface of the wiring electrode
Alternatively, a process of providing a reaction layer, which is a chemical substance that reacts directly with the object to be detected, by plating.
A method for producing a thermoelectric chemical sensor comprising: The method for producing a thermoelectric chemical sensor according to claim 1, further comprising a step of dissolving the protective layer immediately before or after the step of providing the reaction layer. A step of pre-Symbol electrically connected to form the wiring electrode and the n-type pillar element and the p-type pillar-shaped element, by connecting to the n-type pillar element by half of the p-type pillar-shaped element in series The step of forming the first sensor portion and the second sensor portion, and the step of providing the reaction layer is a step of providing only the first sensor portion. The manufacturing method of the thermoelectric chemical sensor of description.

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