JP4211564B2 - Substrate transport tray, substrate transport device, and electronic component mounting device - Google Patents

Substrate transport tray, substrate transport device, and electronic component mounting device Download PDF

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JP4211564B2
JP4211564B2 JP2003356096A JP2003356096A JP4211564B2 JP 4211564 B2 JP4211564 B2 JP 4211564B2 JP 2003356096 A JP2003356096 A JP 2003356096A JP 2003356096 A JP2003356096 A JP 2003356096A JP 4211564 B2 JP4211564 B2 JP 4211564B2
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substrate
insulating
voltage
unit
tray
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JP2005123373A (en
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直樹 鈴木
達雄 笹岡
和之 富田
美根男 徳永
昭広 梅本
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Supply And Installment Of Electrical Components (AREA)

Description

本発明は、基板を保持して搬送する技術、および、基板に電子部品を実装する技術に関する。   The present invention relates to a technology for holding and transporting a substrate and a technology for mounting electronic components on the substrate.

携帯電話やPDA等の小型化に伴い、近年、内部の電気回路に可撓性を有するプリント配線基板(以下、「FPC(Flexible Printed Circuit)」という。)が使用され、さらに、FPCにIC(Integrated Circuit)のベアチップ(以下、「ICチップ」という。)が直接実装される。FPCにICチップを実装する際には各種処理を行う装置がライン状に配列された設備(以下、「ICチップ実装装置」という。)が用いられ、ICチップ実装装置では特許文献1に例示されるように、専用の固定治具や粘着層を利用してパレット上にFPCを固定して搬送する技術が利用されつつある。   In recent years, with the miniaturization of cellular phones, PDAs, etc., flexible printed wiring boards (hereinafter referred to as “FPC”) are used for internal electric circuits, and further, ICs (FPCs) are used in FPCs. A bare chip (hereinafter referred to as an “IC chip”) of an integrated circuit is directly mounted. When an IC chip is mounted on an FPC, equipment (hereinafter referred to as an “IC chip mounting device”) in which devices for performing various processes are arranged in a line shape is used. As described above, a technique for fixing and transporting an FPC on a pallet using a dedicated fixing jig or an adhesive layer is being used.

なお、特許文献2では、基板搬入スライダから基板を取り出して処理ガスが供給されたチャンバ内にICチップとの接合前の基板を静電吸着により保持し、プラズマを発生させて基板の表面の有機物を除去したり、表面を活性化させることにより、電気的回路の信頼性を向上する技術が開示されている。
特開2002−232197号公報 特開2003−124612号公報
In Patent Document 2, a substrate before being bonded to an IC chip is held by electrostatic adsorption in a chamber supplied with a processing gas after the substrate is taken out from the substrate loading slider, and plasma is generated to generate organic substances on the surface of the substrate. A technique for improving the reliability of an electric circuit by removing the surface or activating the surface is disclosed.
JP 2002-232197 A JP 2003-124612 A

ところで、ICチップ実装装置においてパレット上にFPCを固定する際に固定治具を利用する場合には、FPCの形状に応じた専用品を作製しなければならずコストが増大してしまう。また、パレット上に粘着層を設ける場合、ICチップ実装装置において施される処理によっては粘着層が比較的早く劣化して粘着性能が低下し、搬送中にFPCが剥がれてしまう恐れがある。   By the way, when a fixing jig is used when fixing an FPC on a pallet in an IC chip mounting apparatus, a dedicated product corresponding to the shape of the FPC must be manufactured, resulting in an increase in cost. Further, when an adhesive layer is provided on the pallet, the adhesive layer deteriorates relatively quickly depending on the processing performed in the IC chip mounting apparatus, the adhesive performance is lowered, and the FPC may be peeled off during conveyance.

本発明は上記課題に鑑みなされたものであり、基板を安定して保持しつつ搬送する手法を提供することを主たる目的としている。   The present invention has been made in view of the above problems, and has as its main object to provide a technique for transporting a substrate while stably holding it.

請求項1に記載の発明は、基板搬送用トレイであって、基板載置する絶縁1面と、前記絶縁1面とは反対側の絶縁2面と、で構成する板状の絶縁部と、前記絶縁部の絶縁2と接触する導体1面と、前記導体1面とは反対側の導体2面と、で構成する板状の導体板と、前記導体板の導体2面と接触するベース1面と、前記ベース1面とは反対側のベース2面と、で構成する板状のベース部と、前記導体板に電気的に接続され、外部端子と接して電圧が付与される接触端子と、を備え、前記絶縁1面上の基板を、前記ベース2面に投影した領域の外に、前記接触端子を、配置する。 According to one aspect of the present invention, a substrate carrying tray, an insulating first surface for placing a substrate, said insulating one surface and the opposite side of the insulating dihedral is in configuration to that plate-like insulating portion When a conductor one surface in contact with the insulating second surface of said insulating portion, and the conductor a second surface opposite to the conductor one surface, in a plate-shaped conductive plate constituting a conductor 2 side of the conductor plate contact A plate-like base portion constituted by a base 1 surface and a base 2 surface opposite to the base 1 surface are electrically connected to the conductor plate and applied with a voltage in contact with an external terminal. a contact terminal provided with, a substrate on the insulating first surface, outside of the area projected on the base 2 side, the contact terminals, place.

請求項に記載の発明は、請求項1に記載の基板搬送用トレイであって、前記絶縁1面上の基板が載置される領域の一部に、前記絶縁部、前記導体板および前記ベース部を貫通する開口が設けられる。 Invention of Claim 2 is a tray for board | substrate conveyance of Claim 1, Comprising: In a part of area | region in which the board | substrate on the said insulation 1 surface is mounted, the said insulation part, the said conductor board, and the said An opening penetrating the base portion is provided.

請求項に記載の発明は、基板を搬送する基板搬送装置であって、請求項1ないしのいずれかに記載の基板搬送用トレイを搬送する搬送機構と、前記基板搬送用トレイの搬送途上において前記接触端子に接して電圧を付与する外部端子を備える電圧付与部とを備える。 Invention of Claim 3 is a board | substrate conveyance apparatus which conveys a board | substrate, Comprising: The conveyance mechanism in which the board | substrate conveyance tray in any one of Claim 1 thru | or 2 is conveyed, and the conveyance way of the said board | substrate conveyance tray And a voltage applying unit including an external terminal for applying a voltage in contact with the contact terminal.

請求項に記載の発明は、請求項に記載の基板搬送装置であって、前記搬送機構による搬送経路において、前記電圧付与部から所定の距離だけ離れた位置に配置されるもう1つの電圧付与部をさらに備える。 According to a fourth aspect of the present invention, there is provided the substrate transfer apparatus according to the third aspect , wherein another voltage disposed at a position away from the voltage applying unit by a predetermined distance in the transfer path by the transfer mechanism. A provision part is further provided.

請求項に記載の発明は、請求項またはに記載の基板搬送装置であって、前記絶縁部の表面電位を測定する電位測定部をさらに備え、前記電圧付与部が、前記電位測定部により測定された前記絶縁部の表面電位に基づいて電圧付与の要否を決定する。 Invention of Claim 5 is a board | substrate conveyance apparatus of Claim 3 or 4 , Comprising: The electric potential measurement part which measures the surface potential of the said insulation part is further provided, The said voltage provision part is the said electric potential measurement part The necessity of voltage application is determined based on the surface potential of the insulating part measured by the above.

請求項に記載の発明は、請求項に記載の基板搬送装置であって、前記電圧付与部が、前記外部端子と前記接触端子とが接触する前に前記外部端子に前記絶縁部の表面電位近傍の電圧を付与する。 Invention of Claim 6 is a board | substrate conveyance apparatus of Claim 5 , Comprising: The said voltage provision part is a surface of the said insulation part in the said external terminal before the said external terminal and the said contact terminal contact. A voltage near the potential is applied.

請求項に記載の発明は、請求項またはに記載の基板搬送装置であって、前記絶縁部の表面電位を測定する電位測定部をさらに備え、前記電圧付与部が、前記外部端子と前記接触端子とが接触する前に前記外部端子に前記絶縁部の表面電位近傍の電圧を付与する。 The invention according to claim 7 is the substrate transfer apparatus according to claim 3 or 4 , further comprising a potential measuring unit that measures a surface potential of the insulating unit, wherein the voltage applying unit is connected to the external terminal. Before the contact terminal comes into contact, a voltage in the vicinity of the surface potential of the insulating portion is applied to the external terminal.

請求項に記載の発明は、基板に電子部品を実装する電子部品実装装置であって、請求項ないしのいずれかに記載の基板搬送装置と、前記基板搬送装置により搬送途上の基板搬送用トレイに載置された基板に電子部品の実装を行う実装機構とを備える。 The invention according to claim 8 is an electronic component mounting apparatus for mounting an electronic component on a substrate, and the substrate transfer apparatus according to any one of claims 3 to 7 and the substrate transfer in the process of being transferred by the substrate transfer apparatus. And a mounting mechanism for mounting electronic components on a substrate placed on the tray.

本発明によれば、静電気力を利用して基板を安定して基板搬送用トレイに保持しつつ搬送することができ、基板搬送用トレイ上の基板上に電子部品を実装することもできる。   According to the present invention, it is possible to stably transport a substrate while holding it on the substrate transport tray using electrostatic force, and it is also possible to mount electronic components on the substrate on the substrate transport tray.

図1は本発明の一の実施の形態に係る基板搬送用トレイ8を示す縦断面図であり、図2は平面図である。図1は図2中の矢印A−Aの位置での断面を拡大して示している。図1に示すように、基板搬送用トレイ8は、アルミナ(Al2O3)により形成される矩形の板状の絶縁部81を有し、絶縁部81の上面(絶縁1面)811には可撓性を有するプリント配線基板(以下、「基板」という。)9が載置される。絶縁部81の上面811とは反対側の面(絶縁2面)812には、例えば銅箔である2枚の導体板82が互いに重なり合うことなく並べて設けられる。また、導体板82の絶縁部81と接触する導体1面とは反対側の面(導体2面)821には、アルミナにより形成される板状のベース部83がさらに設けられ、絶縁部81とベース部83とはほぼ一体的に形成される。なお、基板搬送用トレイ8の厚さは、例えば、10mmとされる。 FIG. 1 is a longitudinal sectional view showing a substrate carrying tray 8 according to one embodiment of the present invention, and FIG. 2 is a plan view. FIG. 1 shows an enlarged cross section at the position of the arrow AA in FIG. As shown in FIG. 1, the substrate transfer tray 8 has a rectangular plate-like insulating portion 81 formed of alumina (Al 2 O 3), and the upper surface (insulating one surface) 811 of the insulating portion 81 is flexible. A printed wiring board (hereinafter, referred to as “substrate”) 9 having the above is placed. Two conductive plates 82 made of, for example, copper foil are provided side by side without overlapping each other on a surface (insulating two surfaces) 812 opposite to the upper surface 811 of the insulating portion 81. Further, on the surface (conductor 2 surface) 821 opposite to the conductor 1 surface that contacts the insulating portion 81 of the conductor plate 82, a plate-like base portion 83 formed of alumina is further provided. The base portion 83 is formed substantially integrally. In addition, the thickness of the board | substrate conveyance tray 8 shall be 10 mm, for example.

基板搬送用トレイ8は、2枚の導体板82にそれぞれ電気的に接続される2つの接触端子84をさらに備え、接触端子84はベース部83の導体板82と接触するベース1面とは反対側の面(以下、「下面(導体2面)」ともいう。)831上の外縁部に設けられる。各接触端子84には後述する外部の端子が接続され、一方の導体板82には接触端子84を介して正(プラス)の電圧が付与され、他方の導体板82には負(マイナス)の電圧が付与される。これにより、絶縁部81が帯電し(正確には、一方の導体板82側と他方の導体板82側とで異なる極性に帯電し)、静電気力が発生して基板9が絶縁部81上に保持される。また、接触端子84は下面831上において基板9の真下の領域の外側に配置されるため、外部の端子の接続時において絶縁部81に過度の撓みが生じることが防止される。 The substrate transfer tray 8 further includes two contact terminals 84 that are electrically connected to the two conductor plates 82, respectively. The contact terminals 84 are opposite to the base 1 surface that contacts the conductor plate 82 of the base portion 83. A side surface (hereinafter also referred to as “lower surface (conductor 2 surface) ”) 831 is provided at an outer edge portion. Each contact terminal 84 is connected to an external terminal to be described later. A positive voltage is applied to one conductor plate 82 via the contact terminal 84, and a negative voltage is applied to the other conductor plate 82. A voltage is applied. As a result, the insulating portion 81 is charged (precisely, it is charged with different polarities on one conductor plate 82 side and the other conductor plate 82 side), and electrostatic force is generated, so that the substrate 9 is placed on the insulating portion 81. Retained. Further, since the contact terminal 84 is disposed outside the region directly below the substrate 9 on the lower surface 831, it is possible to prevent the insulating portion 81 from being excessively bent when an external terminal is connected.

図1および図2に示すように、絶縁部81上の基板9が載置される領域の一部には絶縁部81、導体板82およびベース部83を貫通する開口85が設けられる。これにより、開口85の位置において、基板搬送用トレイ8の下側から(すなわち、面831側から)基板9の下面にアクセスすることが可能とされる。なお、絶縁部81はアルミナ以外の絶縁体(例えば、絶縁性を有する他のセラミックスやポリイミド等の樹脂)により形成されてもよい。また、導体板82も銅箔以外の板状の導体であってもよく、ベース部83も基板搬送用トレイ8の構造に応じて様々な材料を用いることができる。   As shown in FIGS. 1 and 2, an opening 85 penetrating the insulating portion 81, the conductor plate 82 and the base portion 83 is provided in a part of the region on the insulating portion 81 where the substrate 9 is placed. Thereby, at the position of the opening 85, it is possible to access the lower surface of the substrate 9 from below the substrate carrying tray 8 (that is, from the surface 831 side). The insulating portion 81 may be formed of an insulator other than alumina (for example, other insulating ceramics or polyimide resin). In addition, the conductor plate 82 may be a plate-like conductor other than the copper foil, and the base portion 83 may use various materials depending on the structure of the substrate carrying tray 8.

次に、基板搬送用トレイ8を利用して基板9を搬送しつつ基板9にICチップを実装するICチップ実装装置について説明する。   Next, an IC chip mounting apparatus for mounting an IC chip on the substrate 9 while transporting the substrate 9 using the substrate transport tray 8 will be described.

図3はICチップ実装装置2の構成を示す図である。ICチップ実装装置2は、装置要素をライン状に順に配列した構造となっており、基板9(図3において図示省略)が保持される基板搬送用トレイ8を収納ラック91から取り出してICチップ実装装置2の処理部側へと送るローダ11、基板9を基板搬送用トレイ8とともにチャンバ内にてドライ洗浄する洗浄部3、基板搬送用トレイ8上の基板9にICチップを実装する実装部4、および、処理後の基板9を基板搬送用トレイ8とともにもう1つの収納ラック92に収納するアンローダ14を順に備える。なお、基板搬送用トレイ8は外部の装置において接触端子84を介して導体板82に電圧が予め付与され、絶縁部81上において導体板82の配列方向に垂直な方向に並べられた2枚の基板9を保持した状態でローダ11の収納ラック91に準備される。   FIG. 3 is a diagram showing a configuration of the IC chip mounting apparatus 2. The IC chip mounting device 2 has a structure in which device elements are arranged in a line in order, and the substrate transport tray 8 holding the substrate 9 (not shown in FIG. 3) is taken out of the storage rack 91 and mounted on the IC chip. A loader 11 for sending to the processing unit side of the apparatus 2, a cleaning unit 3 for dry cleaning the substrate 9 together with the substrate transfer tray 8 in the chamber, and a mounting unit 4 for mounting an IC chip on the substrate 9 on the substrate transfer tray 8. And an unloader 14 for sequentially storing the processed substrate 9 in the other storage rack 92 together with the substrate transfer tray 8. Note that the substrate carrying tray 8 is preliminarily applied with voltage to the conductor plate 82 via the contact terminal 84 in an external device, and is arranged on the insulating portion 81 in a direction perpendicular to the arrangement direction of the conductor plates 82. The storage rack 91 of the loader 11 is prepared while holding the substrate 9.

ローダ11は、複数の基板搬送用トレイ8を収納する収納ラック91の高さを順次上昇させる機構を有し、移載アーム111が収納ラック91から基板搬送用トレイ8を取り出して洗浄部3から突出するコンベヤ12上に移載する。   The loader 11 has a mechanism for sequentially raising the height of the storage rack 91 that stores the plurality of substrate transfer trays 8, and the transfer arm 111 takes out the substrate transfer tray 8 from the storage rack 91 and removes it from the cleaning unit 3. Transfer onto the protruding conveyor 12.

洗浄部3は、基板搬送用トレイ8ごと搬入される基板9にドライ洗浄を行うチャンバ31、および、コンベヤ12上を搬送されてきた基板搬送用トレイ8をチャンバ31内へと移載する移載ロボット32を有する。洗浄部3の上部はカバー33により覆われており、カバー33には窒素ガスを供給するガス供給管34が接続される。   The cleaning unit 3 performs dry cleaning on the substrate 9 loaded together with the substrate transporting tray 8, and the transfer of the substrate transporting tray 8 transported on the conveyor 12 into the chamber 31. A robot 32 is included. The upper part of the cleaning unit 3 is covered with a cover 33, and a gas supply pipe 34 for supplying nitrogen gas is connected to the cover 33.

実装部4は、洗浄部3のコンベヤ12から基板搬送用トレイ8を受け取るとともに搬送するコンベヤ13を有し、コンベヤ13により移動する基板搬送用トレイ8上の基板9に対して導電性微粒子を含む接着材料を付与する付与部41、付与された接着材料上にICチップを装着する装着部42、および、ICチップを基板9に向けて加圧するとともに加熱する加熱部43を順に有する。加熱部43による加圧により接着材料に含まれる導電性微粒子がICチップの電極と基板9上の配線との間で潰れてICチップと配線とが電気的に接合され、加熱により接着材料が硬化して基板9上にICチップが固定される。実装部4の上部もカバー44に覆われており、カバー44には窒素ガスを供給するガス供給管45が接続される。   The mounting unit 4 includes a conveyor 13 that receives and conveys the substrate transfer tray 8 from the conveyor 12 of the cleaning unit 3, and includes conductive fine particles with respect to the substrate 9 on the substrate transfer tray 8 that is moved by the conveyor 13. An application unit 41 for applying an adhesive material, a mounting unit 42 for mounting an IC chip on the applied adhesive material, and a heating unit 43 for pressing and heating the IC chip toward the substrate 9 are sequentially provided. The conductive fine particles contained in the adhesive material are crushed between the electrode of the IC chip and the wiring on the substrate 9 by pressurization by the heating unit 43, and the IC chip and the wiring are electrically joined, and the adhesive material is cured by heating. Then, the IC chip is fixed on the substrate 9. The upper part of the mounting part 4 is also covered with a cover 44, and a gas supply pipe 45 for supplying nitrogen gas is connected to the cover 44.

また、カバー44内では基板搬送用トレイ8の搬送途上において、付与部41と装着部42との間、装着部42と加熱部43との間、および、加熱部43の直後に、基板搬送用トレイ8の表面電位を測定する電位測定部15a,15b,15cがそれぞれ取り付けられ、電位測定部15a〜15c(以下、「電位測定部15」とも総称する。)の下方には基板搬送用トレイ8の接触端子84に接して電圧を付与する2つの外部端子を備える電圧付与部16a,16b,16cがそれぞれ設けられる。   Further, in the course of transporting the substrate transport tray 8 in the cover 44, the substrate transport is performed between the applying unit 41 and the mounting unit 42, between the mounting unit 42 and the heating unit 43, and immediately after the heating unit 43. Potential measuring units 15a, 15b, and 15c for measuring the surface potential of the tray 8 are respectively attached, and the substrate conveying tray 8 is provided below the potential measuring units 15a to 15c (hereinafter also collectively referred to as “potential measuring unit 15”). Voltage application portions 16a, 16b, and 16c each having two external terminals that apply a voltage in contact with the contact terminal 84 are provided.

アンローダ14は、収納ラック92の高さを順次下降させる機構を有し、移載アーム141が実装部4から伸びるコンベヤ13上の基板搬送用トレイ8を取り出して収納ラック92に収納する。以上のように、ICチップ実装装置2では、ローダ11、コンベヤ12,13およびアンローダ14により基板搬送用トレイ8の搬送経路が構成される。   The unloader 14 has a mechanism for sequentially lowering the height of the storage rack 92, and the transfer arm 141 takes out the substrate transfer tray 8 on the conveyor 13 extending from the mounting portion 4 and stores it in the storage rack 92. As described above, in the IC chip mounting apparatus 2, the transport path of the substrate transport tray 8 is configured by the loader 11, the conveyors 12 and 13, and the unloader 14.

ICチップ実装装置2では、さらに洗浄部3のカバー33と実装部4のカバー44とがダクト51により接続され、ローダ11と洗浄部3との間、および、実装部4とアンローダ14との間には、窒素ガスの気流を利用した外気遮断機構(いわゆる、エアカーテン)52,53が取り付けられる。これにより、カバー33およびカバー44の内部は窒素ガスの雰囲気とされる。   In the IC chip mounting apparatus 2, the cover 33 of the cleaning unit 3 and the cover 44 of the mounting unit 4 are further connected by a duct 51, between the loader 11 and the cleaning unit 3, and between the mounting unit 4 and the unloader 14. Are fitted with outside air blocking mechanisms (so-called air curtains) 52 and 53 using a nitrogen gas flow. Thereby, the inside of the cover 33 and the cover 44 is made an atmosphere of nitrogen gas.

図4は、洗浄部3の構成を示す平面図である。2枚の基板9を保持しつつコンベヤ12上を搬送されてきた基板搬送用トレイ8は、移載ロボット32のメカニカルチャック321により保持され、僅かに持ち上げられた後にチャンバ31に向けて搬送される。チャンバ31の搬出入口にはゲート部材311が設けられており、ゲート部材311が移動した後に基板搬送用トレイ8がチャンバ31内のステージ312上に載置される。なお、移載ロボット32のメカニカルチャック321において基板搬送用トレイ8の絶縁部81に当接する部位は絶縁体(例えば、アルミナ等のセラミックス、あるいは、ポリイミドやフッ素系樹脂等の樹脂)により形成される。   FIG. 4 is a plan view showing the configuration of the cleaning unit 3. The substrate transport tray 8 that has been transported on the conveyor 12 while holding the two substrates 9 is held by the mechanical chuck 321 of the transfer robot 32, lifted slightly, and then transported toward the chamber 31. . A gate member 311 is provided at the entrance / exit of the chamber 31, and the substrate transfer tray 8 is placed on the stage 312 in the chamber 31 after the gate member 311 moves. Note that the portion of the mechanical chuck 321 of the transfer robot 32 that contacts the insulating portion 81 of the substrate transfer tray 8 is formed of an insulator (for example, ceramics such as alumina, or resin such as polyimide or fluorine-based resin). .

その後、ゲート部材311により搬出入口が閉じられ、チャンバ31内で基板9に対してプラズマを利用した減圧ドライ洗浄が行われる。洗浄が完了すると、ゲート部材311が移動して搬出入口が開かれ、メカニカルチャック321が基板9を基板搬送用トレイ8ごと取り出してコンベヤ12へと戻す。基板搬送用トレイ8はコンベヤ12により実装部4へと搬送される。   Thereafter, the carry-in / out opening is closed by the gate member 311, and the substrate 9 is subjected to low-pressure dry cleaning using plasma in the chamber 31. When the cleaning is completed, the gate member 311 moves to open the carry-in / out entrance, and the mechanical chuck 321 takes out the substrate 9 together with the substrate transfer tray 8 and returns it to the conveyor 12. The substrate transport tray 8 is transported to the mounting unit 4 by the conveyor 12.

図5は洗浄部3内のチャンバ31の構成を示す図である。基板搬送用トレイ8が載置されるステージ312は金属にて形成される電極板となっており、チャンバ31内の上部にはステージ312に対向する電極板313が設けられる。ステージ312には高周波の交流電源314が接続され、ステージ312、電極板313および交流電源314によりチャンバ31内にプラズマを発生させるプラズマ発生機構が構成される。   FIG. 5 is a diagram showing the configuration of the chamber 31 in the cleaning unit 3. The stage 312 on which the substrate transfer tray 8 is placed is an electrode plate formed of metal, and an electrode plate 313 facing the stage 312 is provided in the upper portion of the chamber 31. A high-frequency AC power source 314 is connected to the stage 312, and a plasma generating mechanism for generating plasma in the chamber 31 is configured by the stage 312, the electrode plate 313, and the AC power source 314.

ステージ312には2つの外部端子161が設けられ、各外部端子161は電圧付与ケーブル162aを介して電源ユニット162に接続され、2つの外部端子161および2つの電源ユニット162により1つの電圧付与部16dが構成される。また、ステージ312において外部端子161および電圧付与ケーブル162aの周囲には、例えばアルミナ等の絶縁体により形成されるシールド部312bが設けられ、外部端子161および電圧付与ケーブル162aとステージ312との間が絶縁される。さらに、各電圧付与ケーブル162aにはステージ312と電源ユニット162との間においてノイズフィルタ162bが設けられ、交流電源314に起因する高周波のノイズが電圧付与ケーブル162aを介して電源ユニット162に導かれることが防止される。   Two external terminals 161 are provided on the stage 312, and each external terminal 161 is connected to the power supply unit 162 via the voltage application cable 162 a, and one voltage application unit 16 d is provided by the two external terminals 161 and the two power supply units 162. Is configured. In addition, a shield 312b formed of an insulator such as alumina is provided around the external terminal 161 and the voltage application cable 162a in the stage 312, and the space between the external terminal 161 and the voltage application cable 162a and the stage 312 is provided. Insulated. Furthermore, each voltage applying cable 162a is provided with a noise filter 162b between the stage 312 and the power supply unit 162, and high-frequency noise caused by the AC power supply 314 is guided to the power supply unit 162 via the voltage applying cable 162a. Is prevented.

一方、チャンバ31にはガスを導入するガス導入管315および内部のガスを排気する排気管316が接続されており、ガス導入管315は基板9を洗浄処理するための処理ガスを供給する処理ガス供給部317および窒素ガスを供給する窒素ガス供給部318に接続される。排気管316からはチャンバ31内のガスが強制排気され、チャンバ31内の気圧を調整することが可能とされている。   On the other hand, a gas introduction pipe 315 for introducing gas and an exhaust pipe 316 for exhausting the internal gas are connected to the chamber 31, and the gas introduction pipe 315 supplies a processing gas for cleaning the substrate 9. A supply unit 317 and a nitrogen gas supply unit 318 for supplying nitrogen gas are connected. The gas in the chamber 31 is forcibly exhausted from the exhaust pipe 316, and the atmospheric pressure in the chamber 31 can be adjusted.

図6は1つの外部端子161近傍を拡大して示す図である。図6に示すように、ステージ312の上面312aは基板搬送用トレイ8の下面831に当接する支持面とされ、上面312aには凹部163が形成される。外部端子161は、凹部163内に設けられるとともにバネ等の弾性体164により上方に向けて付勢されており、基板搬送用トレイ8がステージ312に載置されていない状態では、外部端子161の上部が上面312aから突出する。したがって、基板搬送用トレイ8がステージ312上に載置されると、外部端子161は基板搬送用トレイ8の接触端子84に当接して下降し、外部端子161と接触端子84とが確実に電気的に接続される。   FIG. 6 is an enlarged view showing the vicinity of one external terminal 161. As shown in FIG. 6, the upper surface 312a of the stage 312 is a support surface that comes into contact with the lower surface 831 of the substrate transport tray 8, and a recess 163 is formed on the upper surface 312a. The external terminal 161 is provided in the recess 163 and is urged upward by an elastic body 164 such as a spring. When the substrate transfer tray 8 is not placed on the stage 312, the external terminal 161 The upper part protrudes from the upper surface 312a. Therefore, when the substrate transfer tray 8 is placed on the stage 312, the external terminal 161 comes into contact with the contact terminal 84 of the substrate transfer tray 8 and descends, and the external terminal 161 and the contact terminal 84 are surely electrically connected. Connected.

実装部4内に設けられる電圧付与部16a〜16cも(図3参照)、図6の電圧付与部16dと同様の構成とされ、それぞれが電源ユニット162に接続される2つの外部端子161が設けられたステージを有する。ただし、このステージには交流電源314は接続されないため、ノイズフィルタ162bは不要とされる。また、各電圧付与部16a〜16cは対応する電位測定部15からの信号が入力される付与電圧制御部165をさらに有し、付与電圧制御部165は2つの電源ユニット162に接続される(図6において、電圧付与部16a〜16cに係る構成である電位測定部15および付与電圧制御部165を破線にて示す。)。そして、電圧付与部16a〜16cでは取得される基板搬送用トレイ8の表面電位に基づいて付与電圧制御部165により2つの電源ユニット162がそれぞれ制御され、接触端子84に電圧が付与される。なお、電圧付与部16a〜16cが有するステージが絶縁体で形成される場合は、図6中に示すシールド部312bは不要となる。   The voltage application units 16a to 16c provided in the mounting unit 4 (see FIG. 3) are also configured in the same manner as the voltage application unit 16d in FIG. 6, and two external terminals 161 connected to the power supply unit 162 are provided. Stage. However, since the AC power source 314 is not connected to this stage, the noise filter 162b is unnecessary. Each of the voltage applying units 16a to 16c further includes an applied voltage control unit 165 to which a signal from the corresponding potential measuring unit 15 is input, and the applied voltage control unit 165 is connected to two power supply units 162 (see FIG. 6, the potential measuring unit 15 and the applied voltage control unit 165, which are configurations related to the voltage applying units 16a to 16c, are indicated by broken lines. In the voltage application units 16 a to 16 c, the two power supply units 162 are controlled by the application voltage control unit 165 based on the surface potential of the substrate transport tray 8 acquired, and a voltage is applied to the contact terminal 84. In addition, when the stage which the voltage provision parts 16a-16c have is formed with an insulator, the shield part 312b shown in FIG. 6 becomes unnecessary.

図7は、ICチップ実装装置2が基板9上にICチップを実装する動作の流れを示す図である。ICチップ実装装置2では、まず、ローダ11により基板搬送用トレイ8が収納ラック91から取り出され、コンベヤ12上に移載される(ステップS11)。   FIG. 7 is a diagram showing a flow of operations in which the IC chip mounting apparatus 2 mounts the IC chip on the substrate 9. In the IC chip mounting apparatus 2, first, the substrate transport tray 8 is taken out from the storage rack 91 by the loader 11 and transferred onto the conveyor 12 (step S <b> 11).

基板搬送用トレイ8はコンベヤ12により洗浄部3へと搬入され、移載ロボット32により基板9が基板搬送用トレイ8ごと図5に示すチャンバ31内のステージ312上に載置される(ステップS12)。このとき、基板搬送用トレイ8の2つの接触端子84はそれぞれステージ312の2つの外部端子161に当接し、電源ユニット162がONとされることにより、2つの接触端子84にそれぞれ正および負の電圧が、0Vから所定の大きさ(例えば、±2kV)まで増大されつつ付与され、その後一定にされる。これにより、基板9が基板搬送用トレイ8に確実に静電気力により保持される。   The substrate transfer tray 8 is carried into the cleaning section 3 by the conveyor 12, and the transfer robot 32 places the substrate 9 together with the substrate transfer tray 8 on the stage 312 in the chamber 31 shown in FIG. 5 (step S12). ). At this time, the two contact terminals 84 of the substrate transfer tray 8 are in contact with the two external terminals 161 of the stage 312, respectively, and the power supply unit 162 is turned on, whereby the two contact terminals 84 are positive and negative respectively. The voltage is applied while being increased from 0 V to a predetermined magnitude (for example, ± 2 kV), and then is made constant. As a result, the substrate 9 is reliably held by the electrostatic force on the substrate carrying tray 8.

続いて、ゲート部材311により搬出入口が閉じられてチャンバ31内が密閉される。チャンバ31内にはガス導入管315を介して処理ガス供給部317から処理ガス(例えば、四フッ化炭素(CF4)に酸素ガス(O2)を添加したもの)が導入され、さらに、排気管316からガスが排気されることによりチャンバ31内が所定の処理ガスによる所定の気圧へと減圧される。   Subsequently, the gate member 311 closes the carry-in / out entrance, and the chamber 31 is sealed. A processing gas (for example, carbon tetrafluoride (CF 4) added with oxygen gas (O 2)) is introduced into the chamber 31 from a processing gas supply unit 317 via a gas introduction pipe 315, and further, an exhaust pipe 316. As the gas is exhausted from the chamber, the inside of the chamber 31 is depressurized to a predetermined pressure by a predetermined processing gas.

チャンバ31内の雰囲気が調整されると、ステージ312と電極板313との間に高周波の電圧が与えられ、高周波放電により処理ガスがプラズマ化される。チャンバ31内の処理ガス中にプラズマが発生すると、プラズマにより生じたラジカルやイオンにより基板9の洗浄が行われる(ステップS13)。これにより、基板9表面の活性化や基板9上の配線パターンに付着している有機物等の除去が行われる。   When the atmosphere in the chamber 31 is adjusted, a high-frequency voltage is applied between the stage 312 and the electrode plate 313, and the processing gas is turned into plasma by high-frequency discharge. When plasma is generated in the processing gas in the chamber 31, the substrate 9 is cleaned by radicals and ions generated by the plasma (step S13). Thereby, activation of the surface of the substrate 9 and removal of organic substances adhering to the wiring pattern on the substrate 9 are performed.

図8は基板9上の有機物が酸素ラジカルや各種イオンにより除去される様子を示す図である。なお、図8において、*はラジカルであることを示している。図8の左側は、基板9上の有機物が酸素ラジカルにより酸素、水素、水、二酸化炭素、一酸化炭素等に分解され、ガス化されて除去される様子を示している。右側はイオンが有機物に衝突するスパッタ作用により有機物が除去される様子を示している。図8では酸素イオンのみを例示しているが、他のイオンも有機物除去に寄与する。さらに、酸素ラジカル等により基板9の表面の活性化も行われる。このように、チャンバ31内では化学反応および物理反応により有機物が除去されるとともに、基板9の表面の活性化も実現される。   FIG. 8 is a diagram showing how organic substances on the substrate 9 are removed by oxygen radicals and various ions. In FIG. 8, * indicates a radical. The left side of FIG. 8 shows how organic substances on the substrate 9 are decomposed by oxygen radicals into oxygen, hydrogen, water, carbon dioxide, carbon monoxide, etc., and are gasified and removed. The right side shows a state in which organic substances are removed by a sputtering action in which ions collide with organic substances. Although only oxygen ions are illustrated in FIG. 8, other ions also contribute to organic matter removal. Further, the surface of the substrate 9 is activated by oxygen radicals or the like. Thus, in the chamber 31, organic substances are removed by chemical reaction and physical reaction, and activation of the surface of the substrate 9 is also realized.

洗浄が完了すると、処理ガスの導入が停止されるとともに窒素ガス供給部318からガス導入管315を介して窒素ガスがチャンバ31内に導入され、排気管316から排気が行われることにより基板9の周囲が窒素ガスの雰囲気へと置換される。その後、電源ユニット162がOFFとされて接触端子84への電圧の付与が停止されるとともにゲート部材311が搬出入口を開放し、基板9が基板搬送用トレイ8ごと移載ロボット32により搬出される(ステップS14)。   When the cleaning is completed, the introduction of the processing gas is stopped, the nitrogen gas is introduced into the chamber 31 from the nitrogen gas supply unit 318 through the gas introduction pipe 315, and the exhaust from the exhaust pipe 316 is performed. The atmosphere is replaced with an atmosphere of nitrogen gas. Thereafter, the power supply unit 162 is turned off, the application of voltage to the contact terminal 84 is stopped, the gate member 311 opens the loading / unloading port, and the substrate 9 is unloaded by the transfer robot 32 together with the substrate transfer tray 8. (Step S14).

続いて、基板9は洗浄部3から実装部4へと搬送される。洗浄部3のカバー33内および実装部4のカバー44内には窒素ガスを供給するガス供給管34,45が接続され、チャンバ31から基板9が搬出される際の搬送経路はこれらのカバー33,44に覆われることから、基板9は窒素ガス雰囲気下にて搬送されることとなる(ステップS15)。これにより、基板9は活性ガスによる影響を受けることなく実装部4へと搬送される。   Subsequently, the substrate 9 is transported from the cleaning unit 3 to the mounting unit 4. Gas supply pipes 34 and 45 for supplying nitrogen gas are connected in the cover 33 of the cleaning unit 3 and the cover 44 of the mounting unit 4, and the transport path when the substrate 9 is unloaded from the chamber 31 is the cover 33. , 44, the substrate 9 is transported in a nitrogen gas atmosphere (step S15). Thereby, the board | substrate 9 is conveyed to the mounting part 4 without receiving the influence by active gas.

図9および図10(A)ないし図10(C)は、基板9上にICチップ96(図10(C)参照)が実装される様子を説明するための図であり、基板搬送用トレイ8の一部のみが図示されている。前述のように、基板搬送用トレイ8の表面の一部には開口85が設けられており、図9において2点鎖線にて示すように基板9は開口85を覆うようにして基板搬送用トレイ8上に保持される。開口85に接する基板9上の領域はICチップが実装される領域となっており、以下の説明において、この領域を「実装領域」と呼ぶ。また、実装部4近傍では、コンベヤ13は基板搬送用トレイ8の搬送方向に沿う外縁部のみを支持して搬送する構造となっている。   FIGS. 9 and 10A to 10C are views for explaining a state in which the IC chip 96 (see FIG. 10C) is mounted on the substrate 9, and the substrate carrying tray 8 is illustrated. Only a part of is shown. As described above, an opening 85 is provided in a part of the surface of the substrate transfer tray 8, and the substrate 9 is configured to cover the opening 85 as shown by a two-dot chain line in FIG. 9. 8 is held on. An area on the substrate 9 that is in contact with the opening 85 is an area where an IC chip is mounted. In the following description, this area is referred to as a “mounting area”. Further, in the vicinity of the mounting portion 4, the conveyor 13 is configured to support and transport only the outer edge portion along the transport direction of the substrate transport tray 8.

実装部4では、付与部41の下方において基板搬送用トレイ8が停止し、図10(A)に示すように下方から開口85に向かって基板9を部分的に支持する支持台(以下、「バックアップ」という。)411が上昇して、基板9の実装領域が下面から支持される。そして、付与部41のノズルヘッドにより基板9上の実装領域に導電性微粒子を含む接着材料95が付与される(ステップS16)。   In the mounting portion 4, the substrate transport tray 8 stops below the applying portion 41, and as shown in FIG. 10A, a support base (hereinafter, “ This is called “backup”.) 411 is raised, and the mounting area of the substrate 9 is supported from the lower surface. Then, the adhesive material 95 containing conductive fine particles is applied to the mounting region on the substrate 9 by the nozzle head of the applying unit 41 (step S16).

接着材料95が付与されると、バックアップ411が下降して基板搬送用トレイ8が電位測定部15aの下方へと移動し、基板搬送用トレイ8の表面電位に応じて導体板82(図1参照)に電圧が付与される(ステップS17)。   When the adhesive material 95 is applied, the backup 411 descends and the substrate transport tray 8 moves below the potential measuring unit 15a, and the conductor plate 82 (see FIG. 1) according to the surface potential of the substrate transport tray 8. ) Is applied (step S17).

図11は、図7のステップS17(および、後述するステップS19,S21)の電圧付与処理におけるICチップ実装装置2の動作の流れを示す図である。ICチップ実装装置2では、電位測定部15aは進退機構により基板搬送用トレイ8に対して進退可能に支持されており、基板搬送用トレイ8が下方に位置すると電位測定部15aが基板搬送用トレイ8の絶縁部81の表面に所定の距離(例えば、5mm)まで接近して正極側の表面電位が測定される(ステップS31)。   FIG. 11 is a diagram showing an operation flow of the IC chip mounting apparatus 2 in the voltage applying process in step S17 (and steps S19 and S21 described later) in FIG. In the IC chip mounting apparatus 2, the potential measurement unit 15 a is supported by the advance / retreat mechanism so as to be able to advance and retract, and when the substrate transfer tray 8 is positioned below, the potential measurement unit 15 a is moved to the substrate transfer tray. The surface potential on the positive electrode side is measured by approaching the surface of the eight insulating portions 81 to a predetermined distance (for example, 5 mm) (step S31).

測定結果は図6に示す付与電圧制御部165に入力され、絶縁部81の表面電位に基づいて電圧付与の要否が決定される。例えば、絶縁部81の表面において正の電圧が付与される導体板82の真上の位置の表面電位が(+500)Vであり所定の基準値よりも小さい場合には(ステップS32)、電圧付与部16aが有する昇降機構により2つの外部端子161を有するステージが基板搬送用トレイ8の下方から上昇し、2つの外部端子161がそれぞれ基板搬送用トレイ8の2つの接触端子84に当接して電源ユニット162により電圧が付与される(ステップS33)。   The measurement result is input to the applied voltage control unit 165 shown in FIG. 6, and the necessity of voltage application is determined based on the surface potential of the insulating unit 81. For example, when the surface potential of the position directly above the conductor plate 82 to which a positive voltage is applied on the surface of the insulating portion 81 is (+500) V and is smaller than a predetermined reference value (step S32), the voltage is applied. The stage having two external terminals 161 is raised from below the substrate transport tray 8 by the lifting mechanism of the part 16a, and the two external terminals 161 abut against the two contact terminals 84 of the substrate transport tray 8, respectively. A voltage is applied by the unit 162 (step S33).

このとき、付与電圧制御部165の制御により電源ユニット162から正極側の外部端子161に付与される電圧が絶縁部81の表面電位近傍(例えば、表面電位に対して±20パーセントの範囲内の電圧であり、ここでは、(+500±100)V)とされ、負極側の外部端子161に付与される電圧も(−500)V近傍とされた後に、ステージを上昇して外部端子161が接触端子84に当接し、外部端子161の電圧がそれぞれ(+2)kVおよび(−2)kVまで増大される。   At this time, the voltage applied from the power supply unit 162 to the positive external terminal 161 under the control of the applied voltage control unit 165 is near the surface potential of the insulating unit 81 (for example, a voltage within a range of ± 20% with respect to the surface potential). In this case, (+ 500 ± 100) V), and the voltage applied to the external terminal 161 on the negative electrode side is also in the vicinity of (−500) V, and then the stage is raised so that the external terminal 161 is a contact terminal. 84, the voltage of the external terminal 161 is increased to (+2) kV and (−2) kV, respectively.

すなわち、電圧付与部16aでは、外部端子161と接触端子84とが接触する前に外部端子161に絶縁部81の表面電位近傍の電圧が付与され、接触後に所定の大きさまで電圧が増大される。これにより、外部端子161と接触端子84とが接触する際に、接触端子84と外部端子161との間の大きな電位差に起因する放電(いわゆる、スパーク)が生じることが抑制される。なお、正極側および負極側の導体板82にそれぞれ対応する絶縁部81上の2カ所の表面電位が測定され、それぞれの測定値に基づいて各接触端子84への電圧の付与が独立して制御されてもよい。   That is, in the voltage application unit 16a, a voltage near the surface potential of the insulating unit 81 is applied to the external terminal 161 before the external terminal 161 and the contact terminal 84 contact each other, and the voltage is increased to a predetermined level after the contact. Thereby, when the external terminal 161 and the contact terminal 84 contact, it is suppressed that the discharge (what is called spark) resulting from the big potential difference between the contact terminal 84 and the external terminal 161 arises. The surface potentials at two locations on the insulating portion 81 corresponding to the positive electrode side and negative electrode side conductor plates 82 are measured, and the application of voltage to each contact terminal 84 is independently controlled based on the measured values. May be.

各接触端子84に付与する電圧の大きさが2kVまで達すると、電源ユニット162からの電圧付与が停止され、ステージが下降して外部端子161が接触端子84から離れる。なお、ステップS32において表面電位が所定の値以上である場合には、接触端子84に電圧は付与されない。   When the magnitude of the voltage applied to each contact terminal 84 reaches 2 kV, voltage application from the power supply unit 162 is stopped, the stage is lowered, and the external terminal 161 is separated from the contact terminal 84. If the surface potential is equal to or higher than a predetermined value in step S32, no voltage is applied to the contact terminal 84.

以上のようにして接触端子84に電圧が付与されると(または、表面電位が所定の値以上と判定されると)、基板搬送用トレイ8が装着部42の下方へと移動する。そして、図10(B)に示すようにバックアップ421が上昇して基板9の実装領域が下方から支持され、ICチップ96を保持した装着部42のヘッドにより接着材料95上にICチップ96が位置決めされつつ装着される(図7:ステップS18)。   As described above, when a voltage is applied to the contact terminal 84 (or when the surface potential is determined to be equal to or higher than a predetermined value), the substrate transfer tray 8 moves below the mounting portion 42. Then, as shown in FIG. 10B, the backup 421 is raised and the mounting area of the substrate 9 is supported from below, and the IC chip 96 is positioned on the adhesive material 95 by the head of the mounting portion 42 holding the IC chip 96. (FIG. 7: Step S18).

続いて、バックアップ421が下降した後に基板搬送用トレイ8が次の電位測定部15bの下方へと移動し、図7の電圧付与処理が同様に行われる(ステップS19)。電圧付与処理後の基板搬送用トレイ8は加熱部43へと移動する。   Subsequently, after the backup 421 is lowered, the substrate carrying tray 8 is moved below the next potential measuring unit 15b, and the voltage application process of FIG. 7 is similarly performed (step S19). The substrate carrying tray 8 after the voltage application process moves to the heating unit 43.

加熱部43は図9および図10(C)に示すようにヒータにより加熱されたヘッド432を有し、バックアップ431が開口85を介して基板9に到達するとともにヘッド432がICチップ96に当接してICチップ96を挟み込む(すなわち、ICチップ96を基板9側に押圧する)ことにより、接着材料95中の導電性微粒子がICチップ96と基板9上の配線との間で潰れて電気的な接合が行われる。このとき、基板9およびICチップ96はヘッド432とバックアップ431とにより適切に支持されつつ、ヘッド432からの熱を受けて接着材料95が硬化し、ICチップ96が基板9上に固定される(ステップS20)。   The heating unit 43 includes a head 432 heated by a heater as shown in FIGS. 9 and 10C, and the backup 431 reaches the substrate 9 through the opening 85 and the head 432 contacts the IC chip 96. By sandwiching the IC chip 96 (that is, pressing the IC chip 96 toward the substrate 9), the conductive fine particles in the adhesive material 95 are crushed between the IC chip 96 and the wiring on the substrate 9 to electrically Joining is performed. At this time, while the substrate 9 and the IC chip 96 are appropriately supported by the head 432 and the backup 431, the adhesive material 95 is cured by receiving heat from the head 432, and the IC chip 96 is fixed on the substrate 9 ( Step S20).

基板搬送用トレイ8は、ヘッド432およびバックアップ431が離れた後に、次の電位測定部15cの下方へと移動して電圧付与処理が行われる(ステップS21)。そして、基板9はコンベヤ13により図3に示す外気遮断機構53を介して窒素雰囲気下から大気中へと搬出され、アンローダ14により基板搬送用トレイ8とともにコンベヤ13から取り出されて収納ラック92に収納される(ステップS22)。   After the head 432 and the backup 431 are separated from each other, the substrate transfer tray 8 moves to the lower side of the next potential measurement unit 15c to perform voltage application processing (step S21). Then, the substrate 9 is carried out from the nitrogen atmosphere to the atmosphere by the conveyor 13 via the outside air blocking mechanism 53 shown in FIG. 3, and taken out from the conveyor 13 together with the substrate carrying tray 8 by the unloader 14 and stored in the storage rack 92. (Step S22).

以上のように、図1に示す基板搬送用トレイ8では、基板9が載置される絶縁部81の基板9とは反対側に接触端子84と電気的に接続される導体板82を設け、接触端子84を介して導体板82に電圧が付与される。これにより、電圧を常時付与することなく基板9を静電吸着により保持することが可能な基板搬送用トレイ8が実現される。   As described above, in the substrate transport tray 8 shown in FIG. 1, the conductive plate 82 electrically connected to the contact terminal 84 is provided on the opposite side of the insulating portion 81 on which the substrate 9 is placed from the substrate 9, A voltage is applied to the conductor plate 82 via the contact terminal 84. Thereby, the board | substrate conveyance tray 8 which can hold | maintain the board | substrate 9 by electrostatic adsorption | suction, without always providing a voltage is implement | achieved.

また、ICチップ実装装置2における基板搬送用トレイ8の搬送途上において、導体板82に電圧を付与する電圧付与部から所定の距離だけ離れた位置にもう1つの電圧付与部を設けることにより、絶縁部81の帯電量が減衰した場合であっても導体板82に電圧を付与して絶縁部81を帯電させ、静電気力を保ちつつ基板9を安定して保持し、搬送することができる。さらに、電圧を付与する前に絶縁部81の表面電位を測定し、測定結果に基づいて電圧付与部による電圧の付与の要否を決定することで、電圧を効率よく付与することができる。   Further, in the process of transporting the substrate transport tray 8 in the IC chip mounting apparatus 2, insulation is provided by providing another voltage applying unit at a position away from the voltage applying unit for applying a voltage to the conductor plate 82 by a predetermined distance. Even when the charge amount of the portion 81 is attenuated, a voltage is applied to the conductor plate 82 to charge the insulating portion 81, and the substrate 9 can be stably held and transported while maintaining the electrostatic force. Furthermore, the voltage can be efficiently applied by measuring the surface potential of the insulating portion 81 before applying the voltage and determining whether or not the voltage applying portion needs to be applied based on the measurement result.

これにより、図3のICチップ実装装置2では、基板搬送用トレイ8の搬送途上において、基板搬送用トレイ8からの基板9の剥がれ等が生じてICチップ96の実装に不具合が生じることが防止され、ICチップ96を基板9上に安定して実装することができる。また、1種類の基板搬送用トレイ8で様々な形状の基板9に対応することができ、ICチップ実装のコストの削減を図ることができる。   3 prevents the substrate 9 from being peeled off from the substrate transfer tray 8 during the transfer of the substrate transfer tray 8 to cause problems in mounting the IC chip 96. Thus, the IC chip 96 can be stably mounted on the substrate 9. Further, one type of substrate carrying tray 8 can cope with substrates 9 having various shapes, and the cost for mounting IC chips can be reduced.

また、ICチップ実装装置2の電圧付与部16a〜16dでは、OFFとされると同時に外部端子161が電気的に接地される電源ユニットが必要に応じて利用されてもよい。   In addition, in the voltage applying units 16a to 16d of the IC chip mounting apparatus 2, a power supply unit that is turned off and the external terminal 161 is electrically grounded may be used as necessary.

以上、本発明の実施の形態について説明してきたが、本発明は上記実施の形態に限定されるものではなく、様々な変形が可能である。   Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications are possible.

上記実施の形態では、2つの導体板82を有する双極方式の基板搬送用トレイ8が利用されるが、基板搬送用トレイは全ての導体板82に付与される電圧が同じ極性である単極方式であってもよく、基板9中の導体パターンの面積や基板9に施す処理の種類等に応じて双極方式または単極方式が適宜選択される。さらに、導体板82の枚数は1つであっても3以上であってもよい。   In the above embodiment, the bipolar substrate transport tray 8 having the two conductor plates 82 is used, but the substrate transport tray is a monopolar method in which the voltages applied to all the conductor plates 82 have the same polarity. The bipolar method or the monopolar method is appropriately selected according to the area of the conductor pattern in the substrate 9, the type of treatment applied to the substrate 9, and the like. Further, the number of conductor plates 82 may be one or three or more.

また、基板搬送用トレイは様々な構造とすることができ、例えばベース部が導体(例えば、SUS)により形成される図12の基板搬送用トレイ8aでは、板状のベース部83a上に絶縁性の接着剤86が塗布されて導体板82が固定され、導体板82上に基板9が載置される絶縁部81が設けられる。また、ベース部83aには絶縁体により形成される円筒部832が設けられ、接触端子84が円筒部832内に挿入されて導体板82に接続される。   Further, the substrate transfer tray can have various structures. For example, in the substrate transfer tray 8a of FIG. 12 in which the base portion is formed of a conductor (for example, SUS), an insulating property is provided on the plate-like base portion 83a. The conductive plate 82 is fixed by applying the adhesive 86, and an insulating portion 81 on which the substrate 9 is placed is provided on the conductive plate 82. The base portion 83 a is provided with a cylindrical portion 832 formed of an insulator, and the contact terminal 84 is inserted into the cylindrical portion 832 and connected to the conductor plate 82.

既述のように、電圧付与時の基板搬送用トレイ8の歪みを抑制するためには、接触端子84は下面831のうち絶縁部81上の基板9が載置される領域に対応する領域(すなわち、基板9の真下の領域)以外に配置されることが好ましい。ただし、例えば、基板9において実装領域が小さい等の理由により、基板9の外縁部に多少の撓みが生じても基板9に対する処理に支障がない場合には、接触端子84はベース部83の下面831において基板9の真下の領域に配置されてもよい。なお、基板搬送用トレイおよびICチップ実装装置の設計によっては、接触端子84が基板搬送用トレイ8の上面または側面に設けられてもよい。   As described above, in order to suppress the distortion of the substrate carrying tray 8 at the time of applying a voltage, the contact terminal 84 is a region corresponding to a region of the lower surface 831 corresponding to the region on which the substrate 9 on the insulating portion 81 is placed ( In other words, it is preferable to be disposed in a region other than the region immediately below the substrate 9. However, for example, if the substrate 9 has a small mounting area, the contact terminal 84 is the bottom surface of the base portion 83 when there is no problem in processing the substrate 9 even if the outer edge portion of the substrate 9 is slightly bent. 831 may be disposed in a region directly below the substrate 9. Depending on the design of the substrate transport tray and the IC chip mounting apparatus, the contact terminals 84 may be provided on the upper surface or the side surface of the substrate transport tray 8.

上記実施の形態では、電圧付与部は洗浄部3のチャンバ31内、並びに、実装部4の付与部41と装着部42との間、装着部42と加熱部43との間、および、加熱部43の直後に設けられるが、電圧付与部の配置はICチップ実装装置2の構成や基板9に施される処理に応じて様々に変更することが可能である。   In the above embodiment, the voltage applying unit is provided in the chamber 31 of the cleaning unit 3, between the applying unit 41 and the mounting unit 42 of the mounting unit 4, between the mounting unit 42 and the heating unit 43, and the heating unit. Although provided immediately after 43, the arrangement of the voltage applying unit can be variously changed according to the configuration of the IC chip mounting apparatus 2 and the processing applied to the substrate 9.

また、ICチップ実装装置の製造コストを削減する場合には、電位測定部を省くことも可能であり、この場合、基板搬送用トレイ8が電圧付与部に達するごとに接触端子84に電圧が付与される。   Further, in order to reduce the manufacturing cost of the IC chip mounting apparatus, it is possible to omit the potential measuring unit. In this case, a voltage is applied to the contact terminal 84 every time the substrate transport tray 8 reaches the voltage applying unit. Is done.

ICチップ実装装置2は、ICチップ以外の他の電子部品を基板9上に実装する用途(例えば、はんだを用いた抵抗器やコンデンサ等の実装)に利用されてもよい。また、基板搬送用トレイ8に保持される基板は、必ずしも可撓性を有するプリント配線基板である必要はなく、例えば半導体基板やガラス基板であってもよい。基板搬送用トレイ8に保持される基板の枚数は何枚であってもよい。   The IC chip mounting apparatus 2 may be used for a purpose of mounting electronic components other than the IC chip on the substrate 9 (for example, mounting of a resistor or a capacitor using solder). Moreover, the board | substrate hold | maintained at the board | substrate conveyance tray 8 does not necessarily need to be a printed wiring board which has flexibility, For example, a semiconductor substrate and a glass substrate may be sufficient. Any number of substrates may be held on the substrate transport tray 8.

さらに、基板搬送用トレイ8は電子部品を実装する装置以外の装置において設けられる搬送機構による搬送対象とされてもよい。   Further, the substrate transfer tray 8 may be a transfer target by a transfer mechanism provided in an apparatus other than an apparatus for mounting electronic components.

基板搬送用トレイを示す縦断面図Longitudinal cross section showing substrate transfer tray 基板搬送用トレイを示す平面図Plan view showing the substrate transfer tray ICチップ実装装置の構成を示す図The figure which shows the constitution of the IC chip mounting device 洗浄部の構成を示す平面図Plan view showing the configuration of the cleaning section 洗浄部内のチャンバの構成を示す図The figure which shows the structure of the chamber in a washing | cleaning part 外部端子近傍を拡大して示す図Enlarged view showing the vicinity of external terminals 基板上にICチップを実装する動作の流れを示す図The figure which shows the flow of operation which mounts an IC chip on a substrate 基板上の有機物が除去される様子を示す図The figure which shows a mode that the organic substance on a board | substrate is removed 基板上にICチップが実装される様子を説明するための図The figure for demonstrating a mode that an IC chip is mounted on a substrate (A)基板上にICチップが実装される様子を説明するための図(B)基板上にICチップが実装される様子を説明するための図(C)基板上にICチップが実装される様子を説明するための図(A) A diagram for explaining how an IC chip is mounted on a substrate. (B) A diagram for explaining how an IC chip is mounted on a substrate. (C) An IC chip is mounted on a substrate. Illustration for explaining the situation 電圧付与処理の動作の流れを示す図Diagram showing the flow of voltage application processing 基板搬送用トレイの他の例を示す縦断面図Longitudinal sectional view showing another example of substrate transfer tray

符号の説明Explanation of symbols

2 ICチップ実装装置
4 実装部
8,8a 基板搬送用トレイ
9 基板
11 ローダ
12,13 コンベヤ
14 アンローダ
15,15a〜15c 電位測定部
16a〜16d 電圧付与部
81 絶縁部
82 導体板
83,83a ベース部
84 接触端子
85 開口
96 ICチップ
161 外部端子
312a,811,812,821,831 面
DESCRIPTION OF SYMBOLS 2 IC chip mounting apparatus 4 Mounting part 8,8a Substrate conveyance tray 9 Substrate 11 Loader 12, 13 Conveyor 14 Unloader 15, 15a-15c Potential measurement part 16a-16d Voltage provision part 81 Insulation part 82 Conductor plate 83, 83a Base part 84 Contact terminal 85 Opening 96 IC chip 161 External terminal 312a, 811, 812, 821, 831 surface

Claims (8)

基板搬送用トレイであって、
基板載置する絶縁1面と、前記絶縁1面とは反対側の絶縁2面と、で構成する板状の絶縁部と、
前記絶縁部の絶縁2と接触する導体1面と、前記導体1面とは反対側の導体2面と、で構成する板状の導体板と、
前記導体板の導体2面と接触するベース1面と、前記ベース1面とは反対側のベース2面と、で構成する板状のベース部と、
前記導体板に電気的に接続され、外部端子と接して電圧が付与される接触端子と、
を備え
前記絶縁1面上の基板を、前記ベース2面に投影した領域の外に、前記接触端子を、配置することを特徴とする基板搬送用トレイ。
A substrate carrying tray,
An insulating one surface for mounting a substrate, the opposite side of the insulating dihedral and the insulating first surface, in a to that plate-shaped insulating part configuration,
A plate-like conductor plate composed of a conductor 1 surface in contact with the insulating 2 surface of the insulating portion and a conductor 2 surface opposite to the conductor 1 surface ;
A plate-like base portion constituted by a base 1 surface contacting the conductor 2 surface of the conductor plate and a base 2 surface opposite to the base 1 surface ;
A contact terminal electrically connected to the conductor plate and applied with a voltage in contact with the external terminal;
Equipped with a,
Wherein the substrate on the insulating first surface, outside of the area projected on the base 2 side, the substrate carrying tray, characterized in Rukoto the contact terminal, arranged to.
請求項1に記載の基板搬送用トレイであって、
前記絶縁1面上の基板が載置される領域の一部に、前記絶縁部、前記導体板および前記ベース部を貫通する開口が設けられることを特徴とする基板搬送用トレイ。
The tray for transporting a substrate according to claim 1 ,
A substrate transfer tray, wherein an opening penetrating the insulating portion, the conductive plate, and the base portion is provided in a part of a region on which the substrate on the insulating surface is placed.
基板を搬送する基板搬送装置であって、
請求項1ないしのいずれかに記載の基板搬送用トレイを搬送する搬送機構と、
前記基板搬送用トレイの搬送途上において前記接触端子に接して電圧を付与する外部端子を備える電圧付与部と、
を備えることを特徴とする基板搬送装置。
A substrate transfer device for transferring a substrate,
A transport mechanism for transporting the substrate carrying tray according to any one of claims 1 to 2,
A voltage applying unit including an external terminal for applying a voltage in contact with the contact terminal during the transfer of the substrate transfer tray;
The board | substrate conveyance apparatus characterized by the above-mentioned.
請求項に記載の基板搬送装置であって、
前記搬送機構による搬送経路において、前記電圧付与部から所定の距離だけ離れた位置に配置されるもう1つの電圧付与部をさらに備えることを特徴とする基板搬送装置。
It is a board | substrate conveyance apparatus of Claim 3 , Comprising:
The substrate transfer apparatus further comprising another voltage applying unit disposed at a position separated from the voltage applying unit by a predetermined distance in the transfer path by the transfer mechanism.
請求項またはに記載の基板搬送装置であって、
前記絶縁部の表面電位を測定する電位測定部をさらに備え、
前記電圧付与部が、前記電位測定部により測定された前記絶縁部の表面電位に基づいて電圧付与の要否を決定することを特徴とする基板搬送装置。
It is a board | substrate conveyance apparatus of Claim 3 or 4 , Comprising:
A potential measuring unit for measuring the surface potential of the insulating unit;
The substrate transfer apparatus, wherein the voltage applying unit determines whether or not to apply a voltage based on a surface potential of the insulating unit measured by the potential measuring unit.
請求項に記載の基板搬送装置であって、
前記電圧付与部が、前記外部端子と前記接触端子とが接触する前に前記外部端子に前記絶縁部の表面電位近傍の電圧を付与することを特徴とする基板搬送装置。
It is a board | substrate conveyance apparatus of Claim 5 , Comprising:
The substrate transfer apparatus, wherein the voltage applying unit applies a voltage in the vicinity of a surface potential of the insulating unit to the external terminal before the external terminal and the contact terminal come into contact with each other.
請求項またはに記載の基板搬送装置であって、
前記絶縁部の表面電位を測定する電位測定部をさらに備え、
前記電圧付与部が、前記外部端子と前記接触端子とが接触する前に前記外部端子に前記絶縁部の表面電位近傍の電圧を付与することを特徴とする基板搬送装置。
It is a board | substrate conveyance apparatus of Claim 3 or 4 , Comprising:
A potential measuring unit for measuring the surface potential of the insulating unit;
The substrate transfer apparatus, wherein the voltage applying unit applies a voltage in the vicinity of a surface potential of the insulating unit to the external terminal before the external terminal and the contact terminal come into contact with each other.
基板に電子部品を実装する電子部品実装装置であって、
請求項ないしのいずれかに記載の基板搬送装置と、
前記基板搬送装置により搬送途上の基板搬送用トレイに載置された基板に電子部品の実装を行う実装機構と、
を備えることを特徴とする電子部品実装装置。
An electronic component mounting apparatus for mounting electronic components on a substrate,
A substrate transfer device according to any one of claims 3 to 7 ,
A mounting mechanism for mounting electronic components on a substrate placed on a substrate transport tray in the middle of transport by the substrate transport device;
An electronic component mounting apparatus comprising:
JP2003356096A 2003-10-16 2003-10-16 Substrate transport tray, substrate transport device, and electronic component mounting device Expired - Fee Related JP4211564B2 (en)

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Application Number Priority Date Filing Date Title
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* Cited by examiner, † Cited by third party
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WO2009113317A1 (en) * 2008-03-13 2009-09-17 株式会社ニコン Substrate holder, substrate holder unit, substrate transfer apparatus and substrate bonding apparatus
JP2012109409A (en) * 2010-11-17 2012-06-07 Ulvac Japan Ltd Substrate transfer tray
CN102651331A (en) * 2011-06-14 2012-08-29 京东方科技集团股份有限公司 Substrate tray and manufacturing method of flexible electronic device
JP6687495B2 (en) * 2016-10-14 2020-04-22 株式会社Fuji Component mounting line
JP6811840B2 (en) * 2017-03-08 2021-01-13 株式会社Fuji Mounting related equipment

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