JP4209556B2 - Display device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a display device, and more particularly to a technique effective when applied to a flat display device.
[0002]
[Prior art]
As a flat display device, one using a thin film electron source has been proposed.
This thin film type electron source is basically a three-layer thin film structure consisting of an upper electrode, an insulating layer, and a lower electrode. A voltage is applied between the upper electrode and the lower electrode, and electrons are transferred from the surface of the upper electrode into the vacuum. It is what is released.
For example, an MIM (Metal-Insulator-Metal) type in which a metal-insulator-metal is laminated, an MIS (Metal-Insulator-Semiconductor) type in which a metal-insulator-semiconductor is laminated, and the like are known.
An MIM type thin film electron source is disclosed in, for example, Japanese Patent Laid-Open No. 7-65710.
[0003]
FIG. 18 is a diagram for explaining the operating principle of the thin-film electron source.
When a drive voltage is applied from the drive voltage source 20 between the upper electrode 13 and the lower electrode 11 so that the electric field in the insulating layer (tunnel insulating layer) 12 is about 1 to 10 MV / cm, Electrons near the Fermi level pass through the barrier due to the tunnel phenomenon, and are injected into the conduction band of the tunnel insulating layer 12 and the upper electrode 13 to become hot electrons.
Among these hot electrons, those having energy higher than the work function (φ) of the upper electrode 13 are released into the vacuum 18.
Here, when a plurality of upper electrodes 13 and a plurality of lower electrodes 11 are provided, and the plurality of upper electrodes 13 and the plurality of lower electrodes 11 are orthogonal to each other, and the thin film electron source is formed in a matrix shape, from any place Since an electron beam can be generated, it can be used as an electron source for a display device or the like.
Until now, gold (Au)-aluminum oxide (Al ₂ O _Three ) -Electron emission is observed from an MIM (Metal-Insulator-Metal) structure having an aluminum (Al) structure.
[0004]
[Problems to be solved by the invention]
When the thin film type electron source as described above is applied to a display device, heat resistance to a high temperature process during the sealing / sealing process is required.
When aluminum having low heat resistance (hereinafter simply referred to as “Al”) is used for the lower electrode 11, the tunnel insulating layer 12 in the electron emission portion is easily broken due to the formation of hillocks and voids.
As countermeasures, the use of an Al alloy material and a method of laminating a thin Al-based material on a refractory metal film have been studied so far.
The lower electrode 11 made of an Al alloy having a thickness of about 300 nm has a heat resistance of about 400 ° C., and can cope with a sealing / sealing process.
However, as the thickness of the Al alloy is increased, hillocks and voids are likely to be generated and the heat resistance is lowered.
On the other hand, as the display device is increased in size, the wiring length becomes longer. Therefore, it is necessary to increase the thickness of the lower electrode 11.
Therefore, there is a problem that it becomes difficult to ensure heat resistance and reliability as the display device becomes larger.
On the other hand, the lamination of a thin Al-based material on a refractory metal film has disadvantages that the process of processing the laminated film is complicated and that the refractory metal material generally has a higher resistivity than Al.
Increasing the thickness of the lower electrode 11 affects not only heat resistance but also reliability when driving the thin film electron source.
When an Al-based material is used for the lower electrode 11, the surface unevenness increases as the film thickness increases.
Accordingly, the tunnel insulating layer 12 formed by oxidizing the surface also reflects the unevenness.
When a voltage is applied at the time of driving, local electric field concentration is likely to occur due to the surface unevenness, and there is a problem that the reliability of the tunnel insulating layer 12 is broken and the reliability is lowered.
[0005]
The present invention has been made to solve the above-described problems of the prior art, and an object of the present invention is to provide a lower electrode constituting an electron source for a high-temperature process in a sealing / sealing process in a display device. It is an object of the present invention to provide a technique that can ensure the heat resistance of the display device and facilitate the enlargement of the display device.
Another object of the present invention is to provide a technique capable of improving reliability by reducing surface irregularities of a lower electrode constituting an electron source in a display device.
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.
[0006]
[Means for Solving the Problems]
Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.
In the present invention, by providing a lower bus electrode that does not overlap with the electron emission portion of the electron source, aluminum (Al) or an aluminum (Al) alloy mainly composed of aluminum (Al) in the electron emission portion of the electron source The film thickness of the lower electrode made of can be set without depending on the size of the display device.
That is, the present invention is a display device that includes a pair of substrates and a frame member, and a space surrounded by the pair of substrates and the frame member is a vacuum atmosphere, and includes one of the pair of substrates. The substrate is provided in a matrix and includes a plurality of electron sources having a lower electrode, an upper electrode, and an insulating layer provided between the lower electrode and the upper electrode, and the plurality of electron sources. A plurality of lower bus electrodes connected to the lower electrode of each electron source in the row (or column) direction, and the upper electrode of each electron source in the column (or row) direction of the plurality of electron sources. And a plurality of upper bus electrodes. The present invention is also a display device having a pair of substrates and a frame member, wherein a space surrounded by the pair of substrates and the frame member is a vacuum atmosphere, The substrate is provided in a matrix and includes a plurality of electron sources having a lower electrode, an upper electrode, and an insulating layer provided between the lower electrode and the upper electrode, and the plurality of electron sources. A plurality of lower bus electrodes connected to the lower electrode of each electron source in the row (or column) direction, and the upper electrode of each electron source in the column (or row) direction of the plurality of electron sources. A plurality of upper bus electrodes that project into the region of each electron source in the column (or row) direction and have an opening in the region in which the insulating layer of each electron source in the column (or row) direction is provided A plurality of protrusions and covering the openings of the protrusions. And having a plurality of upper bus electrode to which the upper electrode of each electron source of the column (or row) direction is provided so as.
Further, the present invention is characterized in that each of the lower bus electrodes or each of the upper bus electrodes is provided so as not to overlap with a region where the insulating layer of each electron source is provided.
Further, the present invention is characterized in that the thickness of the lower electrode of each electron source is smaller than the thickness of each lower bus electrode.
Further, the present invention is characterized in that the insulating layer of each electron source is an insulating layer formed by anodizing the lower electrode of each electron source.
In the invention, it is preferable that the lower electrode of each electron source is made of aluminum or an aluminum alloy mainly composed of aluminum.
The present invention is characterized in that each of the lower bus electrodes has a trapezoidal cross-sectional shape cut along a plane orthogonal to the extending direction thereof.
Further, the present invention is characterized in that each of the lower bus electrodes is made of a material capable of forming an insulating layer on the surface thereof by an anodic oxidation method.
[0007]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted.
<Basic structure of display device to which the present invention is applied>
FIG. 1 is an exploded perspective view showing a basic structure of a flat display device to which the present invention is applied.
The flat display device shown in FIG. 1 has a thin film type electron source array substrate 1 on which a thin film type electron source array having an MIM type tunnel diode structure is formed and a fluorescent display plate on which striped phosphors are formed. 3 are arranged opposite to each other by a frame glass (frame member of the present invention) 2.
In the figure, 4 is an exhaust pipe.
[0008]
FIG. 2 is a perspective view showing a schematic configuration of an example of the thin film electron source array substrate 1 shown in FIG.
2, a thin film type electron source array substrate 1 includes a striped lower electrode 11 extending in the X direction formed on a substrate 10 such as soda glass, a protective insulating layer 14 formed on the lower electrode 11, and tunnel insulation. The layer 12 is formed on the protective insulating layer 14 and the tunnel insulating layer 12, and is formed on the striped upper electrode bus line 15 (upper bus electrode of the present invention) 15 extending in the Y direction and the upper electrode bus line 15. The upper electrode 13 is constituted.
Here, the lower electrode 11 and the upper electrode bus line 15 are formed so as to be substantially orthogonal to each other, and an electron emission portion 17 is formed in a part of a region where the lower electrode 11 and the upper electrode bus line 15 overlap, The electron emission portions 17 are formed in a matrix. In this electron emission portion 17, the upper electrode bus line 15 is removed, and the upper electrode 13 is opposed to the lower electrode 11 with the tunnel insulating layer 12 interposed therebetween. That is, the electron emission portion is a thin film having an MIM type tunnel diode structure. Construct a type electron source.
Here, the lower electrode 11 is formed of, for example, aluminum having a thickness of 300 nm and containing 2 atomic% of neodymium (hereinafter simply referred to as Nd) (hereinafter simply referred to as Al).
Further, for example, the protective insulating layer 14 and the tunnel insulating layer 12 are both made of an anodic oxide film (Al ₂ O _Three The protective insulating layer 14 has a thickness of 110 nm, and the tunnel insulating layer 12 has a thickness of 5.5 nm.
For example, the upper electrode bus line 15 is formed of a multilayer film of Al having a thickness of 150 nm and molybdenum having a thickness of 45 nm (hereinafter simply referred to as Mo), and the upper electrode 13 has a thickness of Iridium having a thickness of 1 nm (hereinafter simply referred to as Ir), platinum having a thickness of 2 nm (hereinafter simply referred to as Pt), and gold having a thickness of 3 nm (hereinafter simply referred to as Au). And a multilayer film.
[0009]
<Characteristic Structure of Display Device of Embodiment of the Present Invention>
FIG. 3 is a cross-sectional view showing a plan view and a cross-sectional structure of one pixel of the thin film type electron source of the thin film type electron source array substrate 1 of the display device according to the embodiment of the present invention.
As shown in the figure, in the present embodiment, the lower electrode 11 that also serves as a conventional feeder line is divided into a lower electrode 11 and a lower electrode bus line (lower bus electrode of the present invention) 16.
Then, the thickness of the lower electrode bus line 16 is increased to cope with an increase in the size of the display device, and the thickness of the lower electrode 11 is equal to the thickness of the tunnel insulating layer 12 formed on the surface thereof. -The film thickness should be sufficient for the sealing process and with sufficiently small surface irregularities.
Thereby, in this Embodiment, the heat resistance of the lower electrode 11 with respect to the high temperature process at the time of a sealing and sealing process can be ensured, the enlargement of a display apparatus becomes easy, and also the surface of the lower electrode 11 Since the unevenness can be reduced, the reliability of the display device can be improved.
[0010]
Hereinafter, a manufacturing method for one pixel of the thin film type electron source of the thin film type electron source array substrate 1 of the display device of the present embodiment will be described with reference to FIGS.
First, an insulating substrate 10 such as soda glass is prepared, and a metal film for the lower electrode bus line 16 is formed on the substrate 10.
The metal film for the lower electrode bus line may be any material as long as it can realize wiring resistance that functions as a feeder line bus line to the lower electrode 11 and heat resistance during sealing and sealing.
However, it is advantageous to use a material whose surface can form a good-quality insulating film by anodic oxidation because it is easy to insulate from the upper electrode 13 and the upper electrode bus line 15 to be formed later.
As the metal film for the lower electrode bus line, for example, Al, Al alloy, tantalum (Ta), or the like can be used.
In the present embodiment, the Al—Nd alloy is used as the metal film for the lower electrode bus line.
The thickness of the metal film for the lower electrode bus line is arbitrarily set according to the specifications required for the wiring resistance.
In the present embodiment, the thickness of the metal film for the lower electrode bus line is 2 μm.
After the formation of the metal film for the lower electrode bus line, as shown in FIG. 4, the lower electrode bus line 16 is formed by etching.
In the present embodiment, the lower electrode bus line 16 is a simple stripe, but may be processed into another shape that does not overlap the electron emission portion 17.
Next, a metal film for the lower electrode is formed.
As the material of the metal film for the lower electrode, Al, an Al alloy, or the like is used. In the present embodiment, the Al—Nd alloy described above is used.
The thickness of the metal film for the lower electrode is arbitrarily set within a range in which heat resistance to the sealing / sealing temperature can be secured.
In the present embodiment, the thickness of the metal film for the lower electrode is 300 nm.
When pure Al with low heat resistance is used, the thickness of the metal film for the lower electrode is preferably set to about 50 nm.
After forming the metal film for the lower electrode, as shown in FIG. 5, the lower electrode 11 is formed by etching.
In this case, the lower electrode bus line 16 is formed at a position that does not overlap with the electron emission portion 17 to be formed later.
5 illustrates the case where the lower electrode 11 is in contact with the side surface of the lower electrode bus line 16, but in order to make the contact between the lower electrode 11 and the lower electrode bus line 16 more reliable, for example, As shown in FIG. 6, the lower electrode bus line 16 may have a trapezoidal cross section so that a part of the lower electrode 11 is formed on the lower electrode bus line 16.
Furthermore, in order to further ensure the contact between the lower electrode 11 and the lower electrode bus line 16, for example, as shown in FIGS. 7 and 8, a part of the lower electrode 11 may connect the lower electrode bus line 16. The lower electrode 11 may be formed so as to cover the upper surface as well as the side surface of the lower electrode bus line 16.
7 shows the case where the cross-sectional shape of the lower electrode bus line 16 is a rectangular parallelepiped shape, and FIG. 8 shows the case where the cross-sectional shape of the lower electrode bus line 16 is a trapezoidal shape. 7 and 8 both show a case where a part of the lower electrode 11 covering the lower electrode bus line 16 is patterned at the end of the lower electrode bus line 16.
Next, as shown in FIG. 9, a portion that becomes the electron emission portion 17 on the lower electrode 11 is masked with a resist film 21, and the lower electrode 11 and the lower electrode bus line 16 are used as anodes in the chemical conversion solution. The protective insulating layer 14 is formed by selectively anodizing the portion other than the electron emission portion 17 and the lower electrode bus line 16 selectively and thickly.
If the formation voltage is 80 V, the protective insulating layer 14 of about 109 nm is formed.
If the material of the lower electrode bus line 16 is not a material that can form an insulating film on the surface by anodic oxidation, a thick insulating film is deposited on the lower electrode bus line 16.
The protective insulating layer 14 serves to limit the electron emission portion 17 and prevent the electric field from concentrating on the edge of the lower electrode 11.
Further, the lower electrode bus line 16 is insulated from the upper electrode 13 and the upper electrode bus line 15 to be formed later.
Next, as shown in FIG. 10, after the anodic oxidation of the protective insulating layer 14, the resist film 21 is removed, and the lower electrode 11 is used as an anode again, and the electron emission portion 17 is anodized to form the tunnel insulating layer 12. To do.
If the formation voltage is 6 V, a tunnel insulating layer 12 of about 10 nm is formed.
Next, as shown in FIG. 11, a metal film for the upper electrode bus line is formed, and the upper electrode bus line 15 is formed by etching.
In this embodiment, the upper electrode bus line 15 has a simple stripe structure. However, as shown in FIG. 12, the upper electrode bus line 15 is provided with a protruding portion that protrudes up to the lower electrode 11, and an electron You may make it provide an opening part in the area | region of the electron emission part 17 of the said protrusion so that the circumference | surroundings of the emission part 17 may be enclosed.
Finally, an upper electrode metal film is formed by sputtering, and the upper electrode 13 is formed on the upper electrode bus line 15 and the electron emission portion 17 by etching or lift-off.
[0011]
As described above, in the present embodiment, the lower electrode 11 that has also served as a conventional feeder line is divided into the lower electrode 11 and the lower electrode bus line 16, thereby forming the lower electrode in which the electron emission portion 17 is formed. The film thickness of 11 can be set to an arbitrary film thickness that can secure heat resistance in a high-temperature process such as sealing and has sufficiently small surface irregularities.
On the other hand, since the lower electrode bus line 16 can be covered with a thick protective insulating layer 14, even if the film thickness of the lower electrode bus line 16 is increased in accordance with the size of the display device, insulation failure in the sealing process or the like is not caused. Does not occur.
Therefore, a large display device using a thin film electron source can be produced.
[0012]
<Configuration of Thin-Film Electron Source Array Substrate 1 of Display Device of Embodiment of the Present Invention>
The thin film type electron source array substrate 1 of the present embodiment is configured by forming thin film type electron sources in a matrix on the substrate 10 in accordance with the procedure described above.
FIG. 13 is a schematic diagram showing a schematic configuration of the thin-film electron source array substrate 1 of the display device according to the embodiment of the present invention.
In FIG. 13, a (3 × 4) dot thin film type electron source matrix including three lower electrode bus lines 16 and four upper electrode bus lines 15 is shown. The number of thin film type electron source matrices corresponding to the number is formed.
[0013]
<Configuration of Fluorescent Display Plate 3 of Display Device of Embodiment of the Present Invention>
FIG. 14 is a schematic diagram showing a schematic configuration of the fluorescent display plate 3 of the display device according to the embodiment of the present invention.
The fluorescent display panel 3 of the present embodiment includes a black matrix 120 formed on a substrate 110 such as soda glass, and red (R), green (G), and blue (B) formed in a groove of the black matrix 120. ) Phosphors (111 to 113) and a metal back film 114 formed thereon.
Hereinafter, a method for producing the fluorescent display plate 3 of the present embodiment will be described.
First, the black matrix 120 is formed on the substrate 110 for the purpose of increasing the contrast of the display device.
The black matrix 120 is formed by applying a mixed solution of PVA (polyvinyl alcohol; hereinafter, simply referred to as PVA) and ammonium dichromate to the substrate 110 and irradiating the portion other than the portion where the black matrix 120 is to be formed with ultraviolet rays. After exposure, the unexposed portion is removed, a solution in which graphite powder is dissolved is applied thereto, and the PVA is lifted off.
Next, the red phosphor 111 is formed by the following method.
After an aqueous solution in which PVA and ammonium dichromate are mixed with red phosphor particles is applied onto the substrate 110, the phosphor-forming portion is exposed to ultraviolet rays to be exposed, and then the unexposed portion is removed with running water. .
In this way, the red phosphor 111 is patterned.
The phosphor pattern is a stripe pattern shown in FIG. 14, but this stripe pattern is an example. In addition to this, depending on the design of the display, for example, one pixel is formed by four adjacent dots. Of course, the configured “RGBG” pattern is also acceptable.
The red phosphor 111 has a thickness of about 1.4 to 2 layers.
A green phosphor 112 and a blue phosphor 113 are formed by the same method.
Here, as the phosphor, for example, the red phosphor 111 is Y ₂ O ₂ S: Eu (P22-R), green phosphor 112 is Zn ₂ SiO _Four : Mn, blue phosphor 113 was ZnS: Ag (P22-B).
Next, after filming with a film such as nitrocellulose, aluminum (Al) is deposited on the entire substrate 110 to a thickness of about 50 to 300 nm to form a metal back film 114.
This metal back film 114 serves as an acceleration electrode.
Thereafter, the substrate 110 is heated to about 400 ° C. in the atmosphere to thermally decompose organic substances such as a filming film and PVA.
In this way, the fluorescent display panel 3 is completed.
[0014]
<Overall Configuration of Display Device of Embodiment of Present Invention>
FIG. 15 is a schematic diagram showing a schematic overall configuration of a display device according to an embodiment of the present invention.
As shown in FIG. 15, the thin-film electron source array substrate 1 and the fluorescent display plate 3 manufactured by the above procedure are sealed with a frit glass 115 through spacers 30.
The height of the spacer 30 is set so that the distance between the thin film type electron source array substrate 1 and the fluorescent display plate 3 is about 1 to 3 mm.
In FIG. 15, the column of the spacer 30 is provided for each dot emitting light in red (R), green (G), and blue (B), that is, every three rows of the lower electrode. The number (density) of the support columns may be reduced.
Here, the spacer 30 is formed by processing a hole having a desired shape on an insulating plate such as glass or ceramic having a thickness of about 1 to 3 mm, for example, by a sandblast method.
Sealed panels are 10 ~ ⁷ Evacuate to about Torr and seal.
In this way, a display device is completed for the thin film electron source array of the present embodiment.
In the display device of the present embodiment, the distance between the thin-film electron source array substrate 1 and the fluorescent display plate 3 is as long as about 1 to 3 mm, so the acceleration voltage applied to the metal back film 114 is 3 to 6 KV. Can be high voltage.
Therefore, as described above, a phosphor for a cathode ray tube (CRT) can be used as the phosphor.
[0015]
FIG. 16 is a schematic diagram illustrating a state in which a drive circuit is connected to the display device of the present embodiment.
The lower electrode bus line 16 is driven by the lower electrode drive circuit 40, and the upper electrode bus line 15 is driven by the upper electrode drive circuit 50.
An acceleration voltage of about 3 to 6 KV is constantly applied to the metal back film 114 from the acceleration voltage source 60.
[0016]
FIG. 17 is a timing chart showing an example of the waveform of the drive voltage output from each drive circuit shown in FIG.
Here, the mth lower electrode bus line 16 is Km, the nth upper electrode busline 15 is Cn, and the intersection of the mth lower electrode busline 16 and the nth upper electrode busline 15 is (m, n).
At time t0, since no driving voltage is applied to any electrode, no electrons are emitted, and the phosphor does not emit light.
At time t1, the driving voltage (−V1) from the lower electrode driving circuit 40 is applied to the lower electrode bus line 16 of K1, and the upper electrode driving circuit 50 is applied (+ V2) to the upper electrode bus line 15 of (C1, C2). A driving voltage is applied.
Since a voltage of (V1 + V2) is applied between the lower electrode 11 and the upper electrode 13 at the intersections (1, 1) and (1, 2), the voltage of (V1 + V2) is set to be equal to or higher than the electron emission start voltage. If so, electrons are emitted from the thin-film electron source at these two intersections into the vacuum.
The emitted electrons are accelerated by the acceleration voltage from the acceleration voltage source 60 applied to the metal back film 114, and then enter the phosphors (111 to 113) to emit light. At time t2, a drive voltage (−V1) from the lower electrode drive circuit 40 is applied to the lower electrode bus line 16 of K2, and a drive (+ V2) from the upper electrode drive circuit 50 is applied to the upper electrode bus line 15 of C1. When a voltage is applied, the intersection (2, 1) is similarly turned on.
In this manner, a desired image or information can be displayed by changing a signal applied to the upper electrode bus line 15.
In addition, an image with gradation can be displayed by appropriately changing the magnitude of the drive voltage (+ V2) applied to the upper electrode bus line 15.
In addition, the inversion voltage for releasing the electric charge accumulated in the tunnel insulating layer 12 is applied with the drive voltage of (−V1) from the lower electrode drive circuit 40 to all the lower electrode bus lines 16 here. Thereafter, the drive voltage of (+ V3) from the lower electrode drive circuit 40 is applied to all the lower electrode bus lines 16 and the drive voltage of (−V3 ′) is applied to all the upper electrode bus lines 15 from the upper electrode drive circuit 50. went.
In this case, the voltage of (V3 + V3 ′) is set to be approximately the same as the voltage of (V1 + V2).
Although the invention made by the present inventor has been specifically described based on the above-described embodiment, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention. Of course.
[0017]
【The invention's effect】
The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.
(1) According to the present invention, since the thickness of the lower bus electrode can be increased and the thickness of the lower electrode can be set to an optimum thickness, an electron source for a high temperature process during the sealing / sealing process can be provided. The heat resistance of the lower electrode which comprises can be ensured, and the enlargement of a display apparatus becomes easy.
(2) According to the present invention, since the surface unevenness of the lower electrode constituting the electron source can be reduced, the reliability of the display device can be improved.
[Brief description of the drawings]
FIG. 1 is an exploded perspective view showing a basic structure of a flat display device to which the present invention is applied.
2 is a perspective view showing a schematic configuration of an example of a thin film type electron source array substrate shown in FIG. 1. FIG.
FIGS. 3A and 3B are a plan view and a cross-sectional view showing a cross-sectional structure of one pixel of a thin film electron source of a thin film electron source array substrate of a display device according to an embodiment of the present invention. FIGS.
FIG. 4 is a diagram for explaining a method of manufacturing a thin film type electron source of the thin film type electron source array substrate according to the embodiment of the present invention.
FIG. 5 is a diagram for explaining a method of manufacturing a thin film type electron source of the thin film type electron source array substrate according to the embodiment of the present invention.
FIG. 6 is a diagram for explaining another example of the lower electrode according to the embodiment of the present invention.
FIG. 7 is a diagram for explaining another example of the lower electrode according to the embodiment of the present invention.
FIG. 8 is a diagram for explaining another example of the lower electrode according to the embodiment of the present invention.
FIG. 9 is a diagram for explaining a method of manufacturing a thin film type electron source of the thin film type electron source array substrate according to the embodiment of the present invention.
FIG. 10 is a diagram for explaining a method of manufacturing a thin film type electron source of the thin film type electron source array substrate according to the embodiment of the present invention.
FIG. 11 is a diagram for explaining a method of manufacturing a thin film type electron source of the thin film type electron source array substrate according to the embodiment of the present invention.
FIG. 12 is a diagram for explaining a method of manufacturing a thin film type electron source of the thin film type electron source array substrate according to the embodiment of the present invention.
FIG. 13 is a schematic diagram showing a schematic configuration of a thin film type electron source array substrate of the display device according to the embodiment of the present invention.
FIG. 14 is a schematic diagram showing a schematic configuration of a fluorescent display panel of a display device according to an embodiment of the present invention.
FIG. 15 is a schematic diagram showing a schematic overall configuration of a display device according to an embodiment of the present invention.
FIG. 16 is a schematic diagram showing a state in which a drive circuit is connected to the display device according to the embodiment of the present invention.
17 is a timing chart showing an example of a waveform of a drive voltage output from each drive circuit shown in FIG.
FIG. 18 is a diagram for explaining the operating principle of a thin-film electron source.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Thin film type electron source array substrate, 2 ... Frame glass, 3 ... Fluorescent display board, 4 ... Exhaust pipe, 10, 110 ... Substrate, 11 ... Lower electrode, 12 ... Tunnel insulating layer, 13 ... Upper electrode, 14 ... Protection Insulating layer, 15 ... Upper electrode bus line, 16 ... Lower electrode bus line, 17 ... Electron emitter, 18 ... Vacuum, 20 ... Drive voltage source, 21 ... Resist film, 30 ... Spacer, 40 ... Lower electrode drive circuit, 50 DESCRIPTION OF SYMBOLS ... Upper electrode drive circuit, 60 ... Acceleration voltage source, 111 ... Red fluorescent substance, 112 ... Green fluorescent substance, 113 ... Blue fluorescent substance, 114 ... Metal back film, 115 ... Frit glass, 120 ... Black matrix.

Claims (8)

A display device having a pair of substrates and a frame member, wherein a space surrounded by the pair of substrates and the frame member is a vacuum atmosphere,
One substrate of the pair of substrates is provided in a matrix, and a plurality of electron sources having a lower electrode, an upper electrode, and an insulating layer provided between the lower electrode and the upper electrode,
A plurality of lower bus electrodes connected to the lower electrode of each electron source in the row (or column) direction of the plurality of electron sources and not overlapping an electron emission portion of the electron source ;
A plurality of upper bus electrodes connected to the upper electrode of each electron source in the column (or row) direction of the plurality of electron sources, protruding into the region of each electron source in the column (or row) direction; and The column (or row) has a plurality of protrusions having openings in regions where the insulating layers of the electron sources in the column (or row) direction are provided, and covers the openings of the protrusions. And a plurality of upper bus electrodes on which the upper electrodes of the electron sources in the direction are provided.   The display device according to claim 1, wherein each of the lower bus electrodes is provided so as not to overlap with a region where the insulating layer of each of the electron sources is provided.   The display device according to claim 1, wherein a thickness of the lower electrode of each electron source is smaller than a thickness of each lower bus electrode.   The said insulating layer of each said electron source is an insulating layer formed by anodizing the said lower electrode of each said electron source, The any one of Claim 1 thru | or 3 characterized by the above-mentioned. Display device.   5. The display device according to claim 1, wherein the lower electrode of each of the electron sources is made of aluminum or an aluminum alloy containing aluminum as a main material.   6. The display device according to claim 1, wherein each of the lower bus electrodes has a trapezoidal cross-sectional shape cut along a plane orthogonal to an extending direction thereof.   The display device according to claim 1, wherein each of the lower bus electrodes is made of a material capable of forming an insulating layer on a surface thereof by an anodic oxidation method.   The display device according to claim 1, wherein a part of the lower electrode of each electron source is provided on each lower bus electrode.

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