JP4169541B2 - Thin film removal equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention generally relates to a thin film removing apparatus that removes a part of the thin film from the periphery or corners of a substrate coated with a thin film, and in particular, a liquid crystal panel substrate, a semiconductor mask, a liquid crystal panel mask, etc. The present invention relates to a thin film removing apparatus for removing a part of a resist applied to a substrate.
[0002]
[Prior art]
A conventional thin film removing apparatus will be described by taking as an example a thin film removing apparatus that removes a part of a resist from a peripheral portion of a semiconductor mask coated with a resist.
[0003]
The semiconductor mask is produced, for example, by sputtering a chromium film of about 0.1 micron on a quartz substrate with a side of 152 mm and a thickness of 6.3 mm. In order to form a mask pattern on the semiconductor mask using the exposure apparatus, the resist is applied on the semiconductor mask with a thickness of, for example, about 0.5 microns using a rotary resist coating apparatus.
[0004]
When the resist is applied using the rotary resist coating apparatus as described above, the resist adheres to the upper surface, the slope, and the side surface of the peripheral portion of the semiconductor mask. Furthermore, the resist may adhere to the lower surface of the peripheral portion of the semiconductor mask. On the other hand, since the mask transfer robot contacts a part of the side surface of the semiconductor mask, there is a problem that the resist is peeled off and dust is generated, resulting in a mask pattern defect.
[0005]
In order to remove the film adhering to the peripheral part of the substrate, Japanese Patent Laid-Open No. 6-250380 describes an unnecessary film removing method and apparatus for removing an unnecessary film in the peripheral part of the substrate without leaving a residue. In this unnecessary film removing method, while a substrate having a phase shift film having an unnecessary raised portion formed on the surface peripheral portion is rotated, a solvent is sprayed to the surface peripheral portion of the substrate by the first spray nozzle, thereby the raised portion. Next, the solvent is sprayed by the second spray nozzle provided at a position slightly closer to the outer periphery than the position of the first spray nozzle, so that the film remaining on the peripheral portion of the substrate is sprayed. The residue is washed away.
[0006]
However, the film adhering to the side surface or the lower surface of the substrate cannot be removed even by this unnecessary film removing method. Further, according to this unnecessary film removing method, since it is necessary to inject the solvent strongly, there is a possibility that the solvent mist adheres to the substrate, or a part of the scattered film reattaches to the substrate and contaminates the substrate. .
[0007]
[Problems to be solved by the invention]
Therefore, in view of the above points, the present invention is a thin film that removes a part of the thin film with high accuracy and high quality from the upper surface, slope, side surface, lower surface, or corner of the peripheral portion of the substrate coated with the thin film. An object is to provide a removal device. Furthermore, an object of the present invention is to provide a thin film removing apparatus that does not cause the substrate to be contaminated.
[0008]
[Means for Solving the Problems]
To solve the above problems, the thin film removing apparatus of the present invention is an apparatus for removing a portion of the thin film from the peripheral portion of the substrate on which a thin film is applied, a stage for the placing of the substrate, stripping solution A discharge hole for discharging the discharge liquid, a suction hole for sucking the stripping solution, and an introduction groove connecting the discharge hole and the suction hole are formed, and the discharge hole is discharged from the discharge hole when hitting the peripheral part of the substrate. A head that guides the stripping solution through the introduction groove surrounded by the substrate surface to the suction hole, a moving means that relatively moves the stage and the head, and a relative movement between the stage and the head. Moving means, stripping liquid supplying means for supplying the stripping liquid to the head, and stripping liquid collecting means for collecting the stripping liquid from the head.
Furthermore, the thin film removing apparatus according to the first aspect of the present invention is characterized in that the discharge hole opens toward a side surface of the substrate, and the suction hole opens above the substrate.
[0009]
The thin film removing apparatus according to the second aspect of the present invention is an apparatus for removing a part of the thin film from the peripheral portion of the substrate on which the thin film is applied, the stage on which the substrate is placed, and the substrate side A head that discharges the release liquid from one side and sucks the release liquid from below the substrate, a moving means that relatively moves the stage and the head, a release liquid supply means that supplies the release liquid to the head, and a release from the head A stripping solution collecting means for collecting the solution.
[0010]
Furthermore, the thin film removing apparatus according to the third aspect of the present invention is an apparatus for removing a part of the thin film from the peripheral portion of the substrate coated with the thin film, and a stage on which the substrate is placed, and a lower part of the substrate A head that discharges the release liquid from the side of the substrate and sucks the release liquid from the side of the substrate, a moving means that relatively moves the stage and the head, a release liquid supply means that supplies the release liquid to the head, and a release from the head A stripping solution collecting means for collecting the solution.
[0011]
In addition, the thin film removing apparatus according to the fourth aspect of the present invention is an apparatus suitable for removing a part of the thin film from the corner portion of the substrate coated with the thin film, and a stage on which the substrate is placed. And a plurality of protrusions for enclosing the corners of the substrate, discharging the stripping liquid to one side surface of the substrate and sucking the stripping liquid from the other side surface, and the stage and the head relative to each other Moving means for moving to the head, stripping liquid supply means for feeding the stripping liquid to the head, and stripping liquid collecting means for collecting the stripping liquid from the head.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, the same reference number is attached | subjected to the same component and description is abbreviate | omitted.
[0013]
FIG. 1 is a cross-sectional view showing a head and a semiconductor mask used in the thin film removing apparatus according to the first embodiment of the present invention. In the present embodiment, the present invention is applied to a thin film removing apparatus that removes a part of a resist from a peripheral portion of a semiconductor mask coated with a resist.
[0014]
The semiconductor mask 10 is formed, for example, by sputtering a chromium film 13 of about 0.1 micron on a quartz substrate 12 having a square of 152 mm on one side and a thickness of 6.3 mm. In order to form a mask pattern on the semiconductor mask 10 using the exposure apparatus, the resist 14 is applied on the semiconductor mask 10 to a thickness of, for example, about 0.5 microns using a rotary resist coating apparatus. The
[0015]
When the resist is applied using the rotary resist coating apparatus as described above, the resist 14 also adheres to the upper surface 10a, the inclined surface 10b, and the side surface 10c of the peripheral portion of the semiconductor mask. On the other hand, since the mask transfer robot contacts a part of the side surface 10c of the semiconductor mask, there is a problem that the resist is peeled off and dust is generated, resulting in a defect in the mask pattern. In order to prevent this, the thin film removing apparatus according to this embodiment removes the resist 14 from at least the side surface 10c of the semiconductor mask.
[0016]
FIG. 2 is a perspective view of a head used in the thin film removing apparatus according to the first embodiment of the present invention. As shown in FIGS. 1 and 2, the head 1 has an inverted L-shaped shape that covers the upper surface 10 a of the peripheral portion of the semiconductor mask 10 and the upper side of the central portion of the side surface 10 c. An input port 2 and a discharge hole 3 are formed on the side of the head 1, a suction hole 5 and a discharge port 6 are formed on the top of the head 1, and an introduction groove 4 is formed across the side and top of the head 1. Has been.
[0017]
The stripping solution is supplied from the input port 2 and discharged from the discharge hole 3. When suctioned from the discharge port 6 under reduced pressure, the stripping solution discharged from the discharge hole 3 flows to the suction hole 5 along the introduction groove 4 and is discharged from the discharge port 6. Due to the flow of the stripping solution, the resist adhering to the peripheral portion of the semiconductor mask is dissolved and discharged from the discharge port 6. Here, the depth of the introduction groove is preferably within 1.5 mm. By making the introduction groove shallow, the stripping solution can surely come into contact with the semiconductor mask and the stripping efficiency can be increased. As the stripping solution, an organic solvent such as acetone, methyl ethyl ketone, ester, propylene glycol / monomethyl ether / acetate, ethyl lactate, anisole tetrahydrocran, or the like is used.
[0018]
As described above, in this embodiment, in order to surely remove the resist on the side surface of the substrate that must be removed, the stripping solution is discharged toward the side surface of the substrate. Further, since the stripping solution is sucked up against the gravity, the introduction groove can be filled with the stripping solution, and the stripping solution can be reliably brought into contact with the substrate.
[0019]
FIG. 3 is a cross-sectional view showing the semiconductor mask after the resist is removed. As shown in FIG. 3, the resist 14 can be removed from the upper surface 10a, the inclined surface 10b, and the central portion of the side surface 10c in the peripheral portion of the semiconductor mask. In this embodiment, the head is formed so as to remove the resist from the upper surface of the semiconductor mask within 1.5 mm, more preferably within 2 mm from the periphery of the semiconductor mask.
[0020]
FIG. 4 is a plan view showing a moving mechanism for relatively moving the head and the semiconductor mask, and FIG. 5 is a front view showing the stage on which the semiconductor mask is placed.
The semiconductor mask 10 is fixed to the stage 33 using a vacuum pad 34. On the other hand, the arm 30 that supports the head 1 is integrated with a feed screw 31 that is driven by a motor 32. When the motor 32 rotates, the head 1 removes the resist adhering to the periphery of the first side of the semiconductor mask 10 while moving linearly on the guide 36.
[0021]
Next, after moving the head 1 to a position sufficiently away from the semiconductor mask 10, the stage 33 on which the semiconductor mask 10 is placed is rotated 90 degrees by the pulse motor 35. Thereafter, the head 1 is linearly moved again, and the resist adhering to the periphery of the second side is removed. Similarly, the resist adhering to the periphery of the third and fourth sides is removed.
Alternatively, two or four sets of the head and linear movement mechanism shown in FIG. 4 may be provided, and the resist may be removed by moving the head twice or once.
[0022]
Here, as shown in FIG. 6, a mechanism for adjusting the distance between the head and the substrate can be provided so that the peeling liquid fills the introduction groove and does not flow out of the introduction groove.
In FIG. 6, the head 1 is fixed to the base 41. The base 41 is fitted to the upper and lower guides 43 of the adjustment block 42 so as to be movable in the vertical direction. By turning the vertical adjustment screw 44, the position of the base 41 can be adjusted in the vertical direction with respect to the adjustment block 42. The adjustment block 42 is fitted to the front and rear rails 45 of the arm 30 so as to be movable in the front and rear direction (left and right direction in the figure). By turning the front / rear adjustment screw 46, the position of the adjustment block 42 can be adjusted in the front / rear direction with respect to the arm 30.
[0023]
Thereby, the distance (clearance) between the head 1 and the semiconductor mask 10 can be adjusted. For example, the distance between the head 1 and the periphery of the semiconductor mask 10 is adjusted with high accuracy in the range of 0.1 mm to 2 mm so that the peeling liquid fills the introduction groove and does not flow out of the introduction groove. Thus, the resist around the periphery of the semiconductor mask 10 can be efficiently removed.
[0024]
Further, as shown in FIG. 7, a mechanism for cleaning the head may be provided. Since the stripping solution in which the resist is dissolved flows in the ejection hole, the suction hole, and the introduction groove of the head, the periphery thereof is contaminated by the dissolved resist. If the head is contaminated with a dissolved resist, it may cause generation of particles on the substrate. Therefore, it is desirable to periodically clean the head using a mechanism for cleaning the head.
[0025]
In FIG. 7, a nozzle 51 for cleaning the head is movable along the ejection hole 3, the introduction groove 4, and the suction hole 5 of the head 1. When the head 1 is retracted, the nozzle 51 ejects a cleaning liquid to clean the head 1. The cleaning liquid is supplied to the nozzle 51 by a pressurized tank or a pump. As the cleaning liquid, it is desirable to use the same or equivalent chemical liquid as the peeling liquid discharged from the head 1.
[0026]
FIG. 8 is a diagram illustrating a configuration example of a circulation system for supplying and collecting the stripping solution in the present embodiment.
The pressurizing port 21 of the stripping solution tank 20 is pressurized with nitrogen or the like, and the flow rate is controlled by the valve 22 and the needle valve 23 to supply the stripping solution 24 to the head 1. The discharge flow rate of the stripping solution is measured by a float type flow meter 28. On the other hand, the stripping solution in which the resist is dissolved is sucked from the head 1 via the valve 25 by the vacuum pump 27 and collected in the collection tank 26. In the recovery tank 26, gas-liquid separation is performed.
[0027]
Here, instead of the needle valve 23 and the float type flow meter 28 shown in FIG. 8, as shown in FIG. 9, the discharge flow rate of the stripping liquid may be controlled by an electronic type flow rate controller 29. Examples of the electronic flow controller include a combination of an electronic sensor and a piezo type, solenoid type, and thermal expansion type control valve, a mass flow controller, and the like. Since the discharge flow rate of the stripping solution is as small as 1 to 5 ml / min and high flow rate accuracy is required, it is effective to use an electronic flow controller capable of high-precision flow rate control.
[0028]
In FIGS. 8 and 9, the stripping solution is supplied to the head by pressurizing the pressure port 21 of the stripping solution tank 20 with nitrogen or the like. As shown in FIG. 10, a bellows pump (suction pump) 63 is used. The stripping solution may be supplied to the head.
First, when the bellows pump 63 is extended by rotating the pump drive motor 64, the check valve 61 is opened, the check valve 62 is closed, and the peeling liquid is sucked into the bellows pump 63. Next, when the pump drive motor 64 is reversed to contract the bellows pump 63, the check valve 61 is closed and the check valve 62 is opened, so that the stripping solution is supplied to the head 1. Here, the discharge flow rate of the stripping liquid can be controlled by changing the rotational speed of the pump drive motor 64. The expansion / contraction drive of the bellows pump 63 can be performed by an air cylinder or the like in addition to the pump drive motor 64.
[0029]
Next, a second embodiment of the present invention will be described. FIG. 11 is a sectional view showing a head and a semiconductor mask used in the thin film removing apparatus according to the second embodiment of the present invention. In FIG. 11, the resist 14 adheres to the lower surface 10d of the peripheral portion of the semiconductor mask. Since the mask transfer robot is in contact with the lower side of the central portion of the side surface 10c of the semiconductor mask, the thin film removing apparatus according to the present embodiment has a lower side than the central portion of the side surface 10c of the semiconductor mask, The resist 14 is removed from the lower surface 10d.
[0030]
FIG. 12 is a perspective view of a head used in the thin film removing apparatus according to the second embodiment of the present invention. As shown in FIGS. 1 and 2, the head 71 has an L-shape that covers the lower side of the central portion of the side surface 10 c of the semiconductor mask 10 and the lower surface 10 d of the peripheral portion. The ejection hole 3 is formed in the side portion of the head 71, the suction hole 5 is formed in the lower portion of the head 71, and the introduction groove 4 is formed across the side portion and the lower portion of the head 71.
[0031]
The stripping solution is supplied from the input port 2 and discharged from the discharge hole 3. When suctioned from the discharge port 6 under reduced pressure, the stripping solution discharged from the discharge hole 3 flows to the suction hole 5 along the introduction groove 4 and is discharged from the discharge port 6. Due to the flow of the stripping solution, the resist adhering to the lower side of the side surface 10 c of the semiconductor mask and the lower surface 10 d of the peripheral portion is dissolved and discharged from the discharge port 6. Also here, the depth of the introduction groove is preferably within 1.5 mm. By making the introduction groove shallow, the stripping solution can surely come into contact with the semiconductor mask and the stripping efficiency can be increased.
[0032]
As described above, in this embodiment, in order to surely remove the resist on the side surface of the substrate that must be removed, the stripping solution is discharged toward the side surface of the substrate.
[0033]
FIG. 13A is a cross-sectional view showing the semiconductor mask before the resist is removed, and FIG. 13B is a cross-sectional view showing the semiconductor mask after the resist is removed. As shown in FIG. 13A, the resist 14 swells on the upper surface of the peripheral portion of the semiconductor mask and adheres to the lower surface. Even in such a case, as shown in FIG. 13B, the resist 14 can be removed from the lower side of the central portion of the side surface 10c of the semiconductor mask and the lower surface 10d of the peripheral portion. In this embodiment, the head is formed so as to remove the resist from the lower surface of the semiconductor mask within 1.5 mm, more preferably within 2 mm from the periphery of the semiconductor mask.
[0034]
Next, a third embodiment of the present invention will be described. FIG. 14 is a cross-sectional view showing a head and a semiconductor mask used in the thin film removing apparatus according to the third embodiment of the present invention. The head 81 used in the present embodiment is obtained by reversing the positions of the input port 2 and the discharge hole 3 of the head 71 in the second embodiment.
[0035]
The stripping solution is supplied from the input port 2 and discharged from the discharge hole 3. When suctioned from the discharge port 6 under reduced pressure, the stripping solution discharged from the discharge hole 3 flows to the suction hole 5 along the introduction groove 4 and is discharged from the discharge port 6. Due to the flow of the stripping solution, the resist adhering to the lower surface 10 d of the peripheral portion of the semiconductor mask and the lower side of the central portion of the side surface 10 c is dissolved and discharged from the discharge port 6. Also here, the depth of the introduction groove is preferably within 1.5 mm. By making the introduction groove shallow, the stripping solution can surely come into contact with the semiconductor mask and the stripping efficiency can be increased.
[0036]
Thus, in this embodiment, since the stripping solution is sucked up against gravity, the introduction groove can be filled with the stripping solution, and the stripping solution can be reliably brought into contact with the substrate.
[0037]
Next, a fourth embodiment of the present invention will be described. FIG. 15A is a sectional view showing a first head and a semiconductor mask used in the thin film removing apparatus according to the fourth embodiment of the present invention, and FIG. It is sectional drawing which shows the 2nd head and semiconductor mask which are used in the thin film removal apparatus which concerns on 4 embodiment. In the present embodiment, the first head 71 and the second head 91 are used. The first head 71 is the same as the head 71 in the second embodiment, and the second head 91 reverses the positions of the input port 2 and the discharge hole 3 of the head 1 in the first embodiment. It is a thing.
[0038]
16A is a cross-sectional view showing the semiconductor mask before the resist is removed, and FIG. 16B is a cross-sectional view showing the semiconductor mask after the resist is removed. As shown in FIG. 16A, the resist 14 swells on the upper surface of the peripheral portion of the semiconductor mask and adheres to the lower surface. Even in such a case, the first head 71 can remove the resist adhering to the lower side and the lower surface 10d of the peripheral portion from the center portion of the side surface 10c of the semiconductor mask. On the other hand, the second head 91 can remove the resist adhering to the upper side from the central portion of the upper surface 10a, the inclined surface 10b, and the side surface 10c of the peripheral portion of the semiconductor mask. As described above, by using the two heads in combination, in this embodiment, the resist adhering to the lower surface of the semiconductor mask can be completely removed from the peripheral portion of the semiconductor mask.
[0039]
In the above embodiment, the case where the substrate is a square has been described, but the present invention can be realized even if the substrate is a round shape. When the substrate has a round shape, the thin film attached to the circumferential portion of the substrate can be removed by fixing the head and rotating the substrate.
[0040]
Next, a fifth embodiment of the present invention will be described. 17A and 17B are diagrams showing a head and a substrate used in a thin film removing apparatus according to a fifth embodiment of the present invention, where FIG. 17A is a plan view, and FIG. 17B is a cross section taken along the plane BB ′ of FIG. FIG. The thin film removing apparatus according to this embodiment is suitable for removing a part of the thin film from the corner portion of the substrate on which a thin film such as a resist is applied. Further, the head shown in FIG. 17 can be used in combination with the head described in the above embodiment.
[0041]
As shown in FIG. 17A, in the substrate 100, a corner between two orthogonal side surfaces is chamfered, and the resist 14 is attached to the chamfered portion. Since the resist attached to such a portion is difficult to peel off, it is necessary to remove it using a special head.
[0042]
The head 101 has a first side surface 101 a and a second side surface 101 b that respectively oppose two orthogonal side surfaces of the substrate 100. A discharge hole 103 for discharging a stripping solution is formed on the first side surface 101a of the head 101, and a suction hole 105 for sucking the stripping solution is formed on the second side surface 101b. Furthermore, an introduction groove 104 for guiding the stripping liquid discharged from the discharge hole 103 to the suction hole 105 is formed across the first side surface 101a and the second side surface 101b.
[0043]
As shown in FIG. 17B, the head 101 has convex portions 111 and 112 provided above and below to surround the corner portion of the substrate 100. The head 101 is brought close to the corner of the substrate 100 to discharge the release liquid from the discharge hole 103 to one side surface of the substrate, and the release liquid is sucked into the suction hole 105 from the other side surface of the substrate. And the stripping solution is caused to flow into the introduction groove 104 surrounded by 112 and the corner of the substrate 100. The stripping solution dissolves the resist 14 and is discharged from the suction hole 105. As a result, the resist can be removed from the corners of the substrate without contaminating the substrate. Since the head 101 in this embodiment removes the thin film linearly close to the substrate, it is also possible to remove the thin film simultaneously in cooperation with other heads that move relatively around the substrate. It is.
[0044]
【The invention's effect】
As described above, according to the present invention, a thin film that removes a part of the thin film with high accuracy and high quality from the upper surface, slope, side surface, lower surface, or corner of the peripheral portion of the substrate coated with the thin film. A removal device can be provided. Furthermore, according to the present invention, it is possible to provide a thin film removing apparatus that does not cause the substrate to be contaminated.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a head and a semiconductor mask used in a thin film removal apparatus according to a first embodiment of the present invention.
FIG. 2 is a perspective view of a head used in the thin film removing apparatus according to the first embodiment of the present invention.
FIG. 3 is a cross-sectional view showing the semiconductor mask after the resist is removed in the first embodiment of the present invention.
FIG. 4 is a plan view showing a moving mechanism for relatively moving the head and the substrate in the first embodiment of the present invention.
FIG. 5 is a front view showing a stage on which a semiconductor mask is placed in the first embodiment of the present invention.
FIG. 6 is a diagram showing a mechanism for adjusting a distance between a head and a substrate in the first embodiment of the present invention.
FIG. 7 is a diagram showing a mechanism for cleaning a head in the first embodiment of the present invention.
FIG. 8 is a diagram illustrating a configuration example of a circulation system for supplying and collecting a stripping solution in the first embodiment of the present invention.
FIG. 9 is a diagram showing another configuration example of the circulation system for supplying and collecting the stripping solution in the first embodiment of the present invention.
FIG. 10 is a diagram showing still another configuration example of the circulation system for supplying and collecting the stripping solution in the first embodiment of the present invention.
FIG. 11 is a cross-sectional view showing a head and a semiconductor mask used in a thin film removal apparatus according to a second embodiment of the present invention.
FIG. 12 is a perspective view of a head used in a thin film removing apparatus according to a second embodiment of the present invention.
FIG. 13 is a cross-sectional view for comparing the semiconductor mask before the resist is removed and the semiconductor mask after the resist is removed in the second embodiment of the present invention.
FIG. 14 is a longitudinal sectional view of a head used in a thin film removing apparatus according to a third embodiment of the present invention.
FIG. 15 is a cross-sectional view showing two types of heads and a semiconductor mask used in a thin film removing apparatus according to a fourth embodiment of the present invention.
FIG. 16 is a cross-sectional view for comparing the semiconductor mask before the resist is removed with the semiconductor mask after the resist is removed in the fourth embodiment of the present invention.
FIGS. 17A and 17B are views showing a head and a substrate used in a thin film removing apparatus according to a fifth embodiment of the present invention, where FIG. 17A is a plan view, and FIG. 17B is a cross section taken along the plane BB ′ of FIG. FIG.
[Explanation of symbols]
1, 71, 81, 91, 101 Head 2 Input port 3, 103 Discharge port 4, 104 Introducing groove 5, 105 Suction port 6 Discharge port 10 Mask for semiconductor 12 Quartz substrate 13 Chrome film 14 Resist 20 Stripping solution tank 21 Pressurization Mouth 22, 25 Valve 23 Needle valve 24 Stripping liquid 26 Recovery tank 27 Vacuum pump 28 Float flow meter 29 Electronic flow controller 30 Arm 31 Feed screw 32 Motor 33 Stage 34 Vacuum pad 35 Pulse motor 36 Guides 61, 62 Check valve 63 Bellows pump 64 Pump drive motor 100 Substrate 111, 112 Projection

Claims (12)

A thin film removing apparatus for removing a part of the thin film from the peripheral portion of the substrate on which the thin film is applied,
A stage for placing the substrate;
A discharge hole for discharging the stripping liquid, a suction hole for sucking the stripping liquid, and an introduction groove connecting the discharge hole and the suction hole are formed, and discharged from the discharge hole when it is applied to the peripheral portion of the substrate. A head that guides the stripped liquid to the suction hole through the introduction groove surrounded by the substrate surface ;
Moving means for relatively moving the stage and the head;
Stripping solution supplying means for supplying a stripping solution to the head;
A stripping solution collecting means for collecting the stripping solution from the head;
A thin film removing apparatus comprising: 2. The thin film removing apparatus according to claim 1, wherein the discharge hole opens toward a side surface of the substrate, and the suction hole opens above the substrate. Said head has an inverted L-shape, the discharge hole is formed in the side, the suction hole is formed in the upper, the front Kishirube insertion groove is formed across the sides and top The thin film removing apparatus according to claim 2 . 2. The thin film removing apparatus according to claim 1, wherein the discharge hole opens toward a side surface of the substrate, and the suction hole opens below the substrate. Said head has a L-shape, the discharge hole is formed in the side, the suction hole is formed in a lower portion, that before Kishirube insertion groove is formed across the sides and bottom 5. The thin film removing apparatus according to claim 4, wherein The thin film removing apparatus according to claim 1, wherein the discharge hole opens toward a lower side of the substrate, and the suction hole opens on a side surface of the substrate. It said head has a L-shape, the discharge hole is formed in a lower portion, the suction hole is formed in the side, that the front Kishirube insertion groove is formed over the lower and side The thin film removing apparatus according to claim 6 . Thin film removal device according to claim 1, 2, 4 or 6, wherein the depth of the previous SL introduction groove is within 1.5 mm. It said head is a thin film removal of any one of claims 1-8, characterized in that it is formed so as to remove the film from the upper or lower surface of the substrate at within 1.5mm from the edge of the substrate apparatus. The thin film removing apparatus according to any one of claims 1 to 9 , further comprising means for adjusting a distance between the head and the substrate. A thin film removing apparatus for removing a part of the thin film from the peripheral portion of the substrate on which the thin film is applied,
A stage for placing the substrate;
The first discharge hole for discharging the stripping liquid from the side of the substrate, the first suction hole for sucking the stripping liquid from the lower side of the substrate, and the first discharge hole and the first suction hole are connected. A first head with a first introduction groove ;
The second discharge hole for discharging the stripping liquid from above the substrate, the second suction hole for sucking the stripping liquid from the side of the substrate, and the second discharge hole and the second suction hole are connected. A second head with a second introduction groove ;
Moving means for relatively moving the stage and the first and second heads;
Stripping liquid supply means for supplying stripping liquid to the first and second heads;
Stripping solution collecting means for collecting stripping solution from the first and second heads;
A thin film removing apparatus comprising: The thin film removing apparatus according to any one of claims 1 to 11 , wherein the stripping solution supply means includes an electronic flow controller for controlling an amount of the stripping solution to be discharged.

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