JP4166598B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

Info

Publication number
JP4166598B2
JP4166598B2 JP2003067010A JP2003067010A JP4166598B2 JP 4166598 B2 JP4166598 B2 JP 4166598B2 JP 2003067010 A JP2003067010 A JP 2003067010A JP 2003067010 A JP2003067010 A JP 2003067010A JP 4166598 B2 JP4166598 B2 JP 4166598B2
Authority
JP
Japan
Prior art keywords
group
hydrogen atom
atom
general formula
alkyl group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003067010A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004279471A5 (US06780888-20040824-C00057.png
JP2004279471A (ja
Inventor
知也 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2003067010A priority Critical patent/JP4166598B2/ja
Priority to EP04004961A priority patent/EP1457819A3/en
Priority to US10/796,083 priority patent/US7118846B2/en
Publication of JP2004279471A publication Critical patent/JP2004279471A/ja
Publication of JP2004279471A5 publication Critical patent/JP2004279471A5/ja
Application granted granted Critical
Publication of JP4166598B2 publication Critical patent/JP4166598B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2003067010A 2003-03-12 2003-03-12 ポジ型レジスト組成物 Expired - Fee Related JP4166598B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003067010A JP4166598B2 (ja) 2003-03-12 2003-03-12 ポジ型レジスト組成物
EP04004961A EP1457819A3 (en) 2003-03-12 2004-03-03 Positive resist composition and method of forming a resist pattern using the same
US10/796,083 US7118846B2 (en) 2003-03-12 2004-03-10 Positive resist composition and method of forming a resist pattern using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003067010A JP4166598B2 (ja) 2003-03-12 2003-03-12 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2004279471A JP2004279471A (ja) 2004-10-07
JP2004279471A5 JP2004279471A5 (US06780888-20040824-C00057.png) 2005-09-29
JP4166598B2 true JP4166598B2 (ja) 2008-10-15

Family

ID=32767944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003067010A Expired - Fee Related JP4166598B2 (ja) 2003-03-12 2003-03-12 ポジ型レジスト組成物

Country Status (3)

Country Link
US (1) US7118846B2 (US06780888-20040824-C00057.png)
EP (1) EP1457819A3 (US06780888-20040824-C00057.png)
JP (1) JP4166598B2 (US06780888-20040824-C00057.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005173549A (ja) * 2003-11-21 2005-06-30 Fuji Photo Film Co Ltd 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5675070B2 (ja) * 2009-07-30 2015-02-25 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
JP5331624B2 (ja) * 2009-09-04 2013-10-30 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法
KR101810520B1 (ko) * 2009-07-30 2017-12-19 후지필름 가부시키가이샤 감활성 광선성 또는 감방사선성 수지 조성물 및 그것을 사용한 패턴 형성 방법
JP5621432B2 (ja) * 2009-09-17 2014-11-12 住友化学株式会社 レジスト組成物
JP5556522B2 (ja) * 2009-09-17 2014-07-23 住友化学株式会社 レジスト組成物
US9726976B2 (en) * 2009-09-17 2017-08-08 Sumitomo Chemical Company, Limited Photoresist composition
US9223208B2 (en) 2011-12-29 2015-12-29 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition
KR20150101074A (ko) * 2014-02-26 2015-09-03 삼성전자주식회사 포토레지스트 조성물, 이를 이용한 패턴 형성 방법 및 반도체 소자의 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3591672B2 (ja) * 1996-02-05 2004-11-24 富士写真フイルム株式会社 ポジ型感光性組成物
WO2000017712A1 (en) 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
AU4678100A (en) * 1999-05-04 2000-11-17 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
TWI224713B (en) * 2000-01-27 2004-12-01 Fuji Photo Film Co Ltd Positive photoresist composition
US20020155376A1 (en) * 2000-09-11 2002-10-24 Kazuhiko Hashimoto Positive resist composition
JP3876968B2 (ja) 2001-04-26 2007-02-07 信越化学工業株式会社 高分子化合物、化学増幅レジスト材料及びパターン形成方法
US7108951B2 (en) * 2002-02-26 2006-09-19 Fuji Photo Film Co., Ltd. Photosensitive resin composition
KR100955454B1 (ko) * 2002-05-31 2010-04-29 후지필름 가부시키가이샤 포지티브 레지스트 조성물

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005173549A (ja) * 2003-11-21 2005-06-30 Fuji Photo Film Co Ltd 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP4639062B2 (ja) * 2003-11-21 2011-02-23 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法

Also Published As

Publication number Publication date
US7118846B2 (en) 2006-10-10
EP1457819A3 (en) 2004-10-20
US20060035165A1 (en) 2006-02-16
EP1457819A2 (en) 2004-09-15
JP2004279471A (ja) 2004-10-07

Similar Documents

Publication Publication Date Title
JP3909829B2 (ja) ポジ型レジスト組成物
JP4007581B2 (ja) ポジ型レジスト組成物
JP4056345B2 (ja) ポジ型レジスト組成物
JP4092153B2 (ja) ポジ型レジスト組成物
JP4166598B2 (ja) ポジ型レジスト組成物
JP4007582B2 (ja) ポジ型レジスト組成物
JP4018454B2 (ja) ポジ型レジスト組成物
JP2005049695A (ja) ポジ型レジスト組成物
JP2004069981A (ja) ポジ型レジスト組成物
JP2004029542A (ja) ポジ型レジスト組成物
JP4073337B2 (ja) 感光性樹脂組成物
JP3841400B2 (ja) ポジ型レジスト組成物
JP4073253B2 (ja) ポジ型レジスト組成物
JP2004109834A (ja) ポジ型レジスト組成物
JP2004318045A (ja) ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2004101934A (ja) ポジ型レジスト組成物
JP2004170871A (ja) ポジ型レジスト組成物
JP2004271630A (ja) ポジ型レジスト組成物
JP2004302200A (ja) ポジ型レジスト組成物
JP2004271843A (ja) ポジ型レジスト組成物
JP4178007B2 (ja) ポジ型レジスト組成物
JP2003295442A (ja) ポジ型レジスト組成物
JP2004069921A (ja) ポジ型レジスト組成物
JP4084965B2 (ja) ポジ型レジスト組成物
JP2004102264A (ja) 化学増幅型レジスト組成物及びそれを用いたパターン形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050421

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050421

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060325

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20061124

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070803

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070815

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071015

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071108

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071115

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20071122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080109

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080205

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080326

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080410

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080709

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080730

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110808

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110808

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120808

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120808

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130808

Year of fee payment: 5

LAPS Cancellation because of no payment of annual fees