JP4154880B2 - 電気光学装置及びその製造方法 - Google Patents
電気光学装置及びその製造方法 Download PDFInfo
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- JP4154880B2 JP4154880B2 JP2001294719A JP2001294719A JP4154880B2 JP 4154880 B2 JP4154880 B2 JP 4154880B2 JP 2001294719 A JP2001294719 A JP 2001294719A JP 2001294719 A JP2001294719 A JP 2001294719A JP 4154880 B2 JP4154880 B2 JP 4154880B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims description 85
- 230000005540 biological transmission Effects 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000003990 capacitor Substances 0.000 claims description 22
- 238000003860 storage Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 123
- 239000010410 layer Substances 0.000 description 94
- 239000004973 liquid crystal related substance Substances 0.000 description 37
- 238000000034 method Methods 0.000 description 23
- 239000011347 resin Substances 0.000 description 18
- 229920005989 resin Polymers 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 16
- 239000012535 impurity Substances 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 239000011521 glass Substances 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 9
- 229910052715 tantalum Inorganic materials 0.000 description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- -1 phosphorus ions Chemical class 0.000 description 7
- 239000003566 sealing material Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 239000004925 Acrylic resin Substances 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000010365 information processing Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 235000013842 nitrous oxide Nutrition 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Optical Elements Other Than Lenses (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001294719A JP4154880B2 (ja) | 2001-09-26 | 2001-09-26 | 電気光学装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001294719A JP4154880B2 (ja) | 2001-09-26 | 2001-09-26 | 電気光学装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003107453A JP2003107453A (ja) | 2003-04-09 |
| JP2003107453A5 JP2003107453A5 (enrdf_load_stackoverflow) | 2005-07-21 |
| JP4154880B2 true JP4154880B2 (ja) | 2008-09-24 |
Family
ID=19116277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001294719A Expired - Fee Related JP4154880B2 (ja) | 2001-09-26 | 2001-09-26 | 電気光学装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4154880B2 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070001169A (ko) | 2004-03-05 | 2007-01-03 | 이데미쓰 고산 가부시키가이샤 | 반투명ㆍ반사 전극 기판, 그의 제조 방법, 및 이러한반투과ㆍ반반사 전극 기판을 이용한 액정 표시 장치 |
| EP1610170A1 (en) * | 2004-06-25 | 2005-12-28 | Sony Deutschland GmbH | A method of applying a particle film to create a surface having light-diffusive and/or reduced glare properties |
| US7821613B2 (en) | 2005-12-28 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| KR101148200B1 (ko) * | 2006-01-27 | 2012-05-24 | 삼성전자주식회사 | 표시 기판, 이의 제조 방법 및 이를 갖는 표시 장치 |
| JP4205144B2 (ja) * | 2007-10-12 | 2009-01-07 | 三菱電機株式会社 | アクティブマトリクス基板及びその製造方法 |
| KR101274715B1 (ko) | 2009-12-22 | 2013-06-12 | 엘지디스플레이 주식회사 | 박막트랜지스터 기판 및 그 제조 방법 |
| JP7393927B2 (ja) * | 2019-11-29 | 2023-12-07 | シャープ株式会社 | 液晶表示パネル |
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2001
- 2001-09-26 JP JP2001294719A patent/JP4154880B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2003107453A (ja) | 2003-04-09 |
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