JP4130012B2 - Scanning charged particle beam application apparatus, microscopic method using the same, and semiconductor device manufacturing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a scanning charged particle beam application apparatus and a semiconductor device manufacturing method, and particularly suitable for observing a processing shape when forming a fine semiconductor device on a semiconductor substrate. The present invention relates to a type charged particle beam application apparatus and a method of manufacturing a semiconductor device having high processing accuracy using the same.
[0002]
[Prior art]
In a method of manufacturing a semiconductor device, a technique for forming a pattern is generally called “lithography”.
In the lithography, it is desirable that the design dimension of the pattern is the same as the dimension after processing. That is, the fact that the desired element size of the pattern is equal to the element size after processing indicates that high-precision processing has been performed. However, as the pattern has been miniaturized in recent years, the required drawing accuracy has become higher and the processing has become difficult.
[0003]
This is because, for example, when the processing dimension is at a level of 200 nm, the dimension variation due to the diffusion of the acid substance in the baking process of the pattern-forming chemically amplified resist cannot be ignored. In addition, due to the scattering of incident energy rays and the effective irradiation area variation (generally referred to as proximity effect) due to the effect of interference between energy rays, the processing dimensions change, and the amount of change can no longer be ignored. It is.
[0004]
Therefore, highly accurate observation and evaluation of the processing pattern is essential. This is because the process conditions can be accurately evaluated by accurately evaluating the pattern dimensions after processing, and the process conditions can be optimized by feeding back the pattern dimensions to a semiconductor device manufacturing apparatus. Because it becomes.
As a conventional evaluation apparatus, for example, an electron microscope for measuring length described in JP-A-9-166428 is cited.
In this technique, a sample to be observed is first scanned by irradiating a focused electron beam. At that time, the secondary electron beam generated from the sample to be observed is captured by the detection system, and the image of the sample to be observed is displayed on the display system by synchronizing the scanning line and the detection signal. It is a device intended to measure. At that time, in order to cope with changes in pattern dimensions due to charging and “contamination” due to electron beam irradiation, a means for recording temporal changes in pattern dimensions is provided, and a predetermined calculation is performed from the recording by the recording means. A length-measuring electron microscope provided with means for calculating a pattern size at a predetermined time by a method, for example, time extrapolation.
Further, the above-mentioned electron microscope for length measurement has been limited to simply measuring the length and width of the pattern. In general, an electron microscope for length measurement is an apparatus having a feature that it can scan in one direction and can obtain a considerable accuracy for measurement in the scanning direction. For this reason, there have been microscopic and inspection techniques that take advantage of this feature, but the accuracy of using the matching between multiple patterns and the fidelity between the observation pattern and the processing pattern resulting from processing as designed. There was no technology that could make a decision.
[0005]
[Problems to be solved by the invention]
The problems in the above-described conventional technology will be described with reference to FIGS.
FIG. 1 is an explanatory diagram of pattern measurement of a conventional scanning charged particle microscope for length measurement, and FIG. 2 is an explanatory diagram of an allowable error in the pattern measurement of FIG.
The first problem is that the charged particle beam scans the sample to be observed in one direction in order to improve the S / N ratio when measuring the actual pattern size of the sample to be observed processed by the scanning charged particle beam application device. In addition, a two-dimensional scanning method for moving the scanning charged particle beam in one direction in a direction orthogonal to the scanning direction is performed. In the scanning method, a dimension in a specific one-dimensional direction, for example, in FIG. As shown, only the width in a specific direction of the resist pattern 101 in the screen can be measured, and it does not have a function of determining whether or not the width of the resist pattern 101 is formed in a desired dimension region.
[0006]
The fact that only the dimensions in this specific one-dimensional direction cannot be measured means that the allowable maximum range line 202 and the allowable minimum range line 203 of the resist pattern 201 are displayed on the same screen as shown in FIG. It was not possible to easily evaluate the quality of. Further, the desired pattern and the actual pattern after processing are displayed on the same screen, the difference between them is quantitatively evaluated, and the evaluation result is reflected in the process conditions for operating the processing apparatus. There was a problem that the basic data could not be collected.
Furthermore, on the resist pattern of the sample to be observed, one method is to use the charged particle beam focus as a parameter in one direction and the other is to use a charged particle beam dose as a parameter to form a matrix and determine the optimum conditions manually. There was a problem that it was also a bottleneck in the progress of processing technology that could not be realized other than through the process.
[0007]
Secondly, the evaluation results of the substrate to be processed including the processed actual pattern basically remained as mere evaluation data by the scanning charged particle beam application apparatus. Also, feedback of the evaluation to the processing process steps of the substrate to be processed has been performed manually. For this reason, since the process step itself is not automated as well as the change of the process step, it takes time to change the process condition of the step, the accuracy is not sufficient, and the productivity is not improved. There was a problem.
[0008]
[Means for Solving the Problems]
An example of means for solving the problem will be described.
The first problem is that an observation pattern observed with a scanning charged particle beam application apparatus and a reference pattern (a processing pattern calculated based on design data in this specification) as a judgment condition image corresponding to the observation pattern Inspection using a scanning charged particle beam application device equipped with means for displaying on the same screen, or applying to observation patterns based on parameters defined as judgment condition images. In addition, a condition is set in the observation image, a determination inspection is performed, or information from another processing apparatus is automatically input via the network, and information obtained from the signal obtained by the signal processing system is input to the network. Using a scanning charged particle beam application device configured to include input / output means for automatically outputting output via an input / output unit. The determination means automatically inputs information from another processing apparatus via a network, and is connected to a database storing information on the substrate to be processed, and diagnoses information obtained by the signal processing system. An image of a judgment condition for performing the determination is received from the database, the information of the judgment condition is compared with information from the signal processing system corresponding to the image of the judgment condition, and information based on the judgment result is The problem can be solved by inspecting the processing apparatus using a scanning charged particle beam application apparatus or the like configured to automatically output the processing apparatus via the network.
[0009]
In addition, the lens system irradiates a focused charged particle beam to the actual pattern on the processed substrate according to the design pattern by the processing apparatus, and the detection system irradiates the charged particle beam on the workpiece substrate along with the charged particle beam irradiation. Scanning that captures secondary electrons and / or reflected electrons generated from the actual pattern, converts the detection signal into a two-dimensional image signal by a signal processing system, and displays the two-dimensional image signal as an observation pattern image by a display system A microscopic method using a charged particle beam application apparatus, displaying an image of a judgment condition on the same display screen of the observation pattern image, and a database unit storing information on the processing apparatus and the substrate to be processed, and To connect the input / output unit with a network, and to evaluate the observation pattern image from the processing unit information and the database unit via the network from the input / output unit A scanning type that receives an image of a determination condition, determines the observation pattern image based on the image of the determination condition, and transmits the determination result from the input / output unit to the processing apparatus via the network This can be solved by observing and inspecting using a microscopic method using a charged particle beam application apparatus.
[0010]
Another problem is that in the semiconductor device manufacturing method, a plurality of processing devices and the scanning charged particle beam application device are connected by a transport mechanism, and the semiconductor substrate is connected to the scanning type from the first processing device. For example, it is carried into an inspection apparatus constituted by a charged particle beam application apparatus via a carry-in unit, and is inspected by an inspection apparatus using the scanning charged particle beam application apparatus. After the inspection is completed, the scanning charged particle beam The problem can be solved by unloading from the inspection apparatus constituted by the application apparatus via, for example, the unloading unit and automatically conveying it to the second processing apparatus.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to FIGS. 3 to 13.
First, an outline of an embodiment of the present invention will be described.
First, the actual image obtained by the charged particle beam application apparatus and the image of the determination condition or the two-dimensional reference image are compared as the image of the determination condition to evaluate the process.
Second, a line or an image on a processing pattern is defined as a determination parameter as a determination condition image, and a line or image of a real image by a charged particle beam application apparatus is compared with the definition to evaluate the process. . Third, the process is evaluated by relatively comparing at least two observation pattern images obtained by the charged particle beam application apparatus. In this way, it is roughly divided into three.
These will be described in sequence, but in the following embodiments, the case of an electron beam as the charged particle beam will be described.
Therefore, the charged particle beam application apparatus according to the present invention will be described as a scanning electron microscope according to the present invention. However, in each embodiment, the same applies to the case of using other charged particle beams including ion beams.
[0012]
[Embodiment 1]
FIG. 3 is an explanatory diagram of a configuration and a display screen of the scanning electron microscope according to the embodiment of the present invention.
In the scanning electron microscope according to the present invention shown in FIG. 3A, the electron beam 302 generated from the electron source 301 is focused by the lens system 303, and the electron beam 302 is deflected by the deflection system 304 to be observed. The substrate 305 to be processed is scanned two-dimensionally.
The two-dimensional scanning is performed by a two-dimensional scanning method in which the substrate 305 is horizontally scanned from the left to the right, and the vertical scanning is performed by moving the horizontal scanning vertically at regular intervals. The electron beam 302 is accelerated to, for example, 2 kV by an acceleration electrode (not shown).
[0013]
The acceleration voltage of the electron beam may be decelerated by a deceleration electrode (not shown). The substrate 305 to be processed is placed on a stage system 306 having a moving mechanism, and an area beyond the deflection area of the electron beam 302 can be observed. The substrate 305 to be processed is generally a semiconductor substrate such as silicon formed with a resist pattern, for example.
However, it is needless to say that the semiconductor substrate such as silicon is not limited to a resist pattern, and there is no limitation on the type of metal pattern, insulator pattern, etc. on the semiconductor substrate.
[0014]
The substrate to be processed 305 is taken in and out through a cassette 307 through a conveyance line (not shown). Then, secondary electrons and / or reflected electrons generated from the pattern formed on the workpiece substrate 305 are captured by the detection system 308 along with the electron beam irradiation. Here, the detection system 308 uses, for example, a known scintillator-photomal secondary electron detector or semiconductor detector.
[0015]
Further, after the detected secondary electrons and / or reflected electrons are converted into electrical signals, the signal processing system 309 performs processing for converting the converted signals into image data signals. In this process, an image data signal is generated in synchronization with the scanning speed of the deflection system 304. By displaying the processed image data signal as an image on the display system 310, the pattern shape on the substrate 305 to be processed can be displayed.
[0016]
Here, a lens system 303, a deflection system 304, a stage system 306, a cassette 307, a detection system 308, a signal processing system 309, a display system 310, and a vacuum system (not shown here) for evacuating the entire apparatus are provided. For example, it is controlled by an arithmetic control system 311 provided with a workstation. In addition, a determination unit 312 for determining information entered in the calculation control system 311 is added to the calculation control system 311.
[0017]
Furthermore, the present apparatus may take a form connectable to a network as shown below. That is, it has an information signal input / output unit 313 connected to the control unit 311, for example, a network 314 represented by Ethernet or a dedicated local network using an optical cable or the like is established, and the network is connected to the network via the input / output unit 313. It is connected.
[0018]
The network is connected to a processing device that processes the substrate to be processed and a device that collects a database that stores information such as the “relation table between process conditions and processing results” of the substrate 305 to be processed. Data can be automatically exchanged between the database and the main scanning electron microscope.
Then, on the screen of the display system 301, as shown in FIG. 3B (b), the reference pattern 315 to be processed can be displayed superimposed on the observed observation pattern 316.
[0019]
Here, as described above, the reference pattern 315 is “a simulation result of a processing pattern calculated based on design data, exposure conditions, and development conditions or design data itself”. That is, it is a predicted processing mode. Or, as will be described later, it may be used for a region indicating the allowable range of the observed pattern to be observed.
[0020]
Here, measurement using the present scanning electron microscope will be described according to the flowchart shown in FIG. FIG. 4 is a measurement flowchart using the scanning electron microscope of FIG.
First, a sample (substrate to be processed) is loaded into a scanning electron microscope and measurement is started.
The following various detections, displays, calculations, and the like from Step 1 to Step 7 are controlled and executed by the calculation control system 311.
In step 1, the pattern location to be measured on the sample is specified. For this specification, a measurement location may be registered in advance in a storage unit (not shown) of the scanning electron microscope and automatically specified from the arithmetic control system 311 or may be manually specified from the screen by the measurer. Good.
[0021]
In step 2, the pattern image on the sample is observed. That is, it is detected by the detection system 308 and displayed on the display system 310.
Here, for example, it is assumed that the width of the resist pattern as shown in FIG. 3B formed by normal KrF excimer laser exposure is measured.
The energy beam for resist processing may be an energy beam that can form an electron beam, X-ray, or ion beam pattern in addition to the KrF excimer laser.
[0022]
Next, in step 3, the user selects whether or not to display reference pattern data, that is, whether or not to compare the observed observation pattern image 316 and the displayed reference pattern image 315.
If the comparison is selected, a reference pattern image 315 is displayed.
If it is selected not to compare, this corresponds to performing a normal line width measurement. After the measurement, in step 3a, it is selected again whether or not to observe another pattern.
If another pattern is to be observed, the process returns to step 1. If no other pattern is to be observed, step 7 is ended.
[0023]
The scanning electron microscope is provided with an individual storage device, and stores information on a predicted processing shape (CAD data) obtained by a normal simulation from a design pattern, exposure conditions, and development conditions. These are used as determination parameters for comparing the observation pattern image with the reference pattern image and determining the quality.
The scanning electron microscope is connected to a network, and data similar to that of the individual storage device is stored in an external database. The data can be received and referenced via the network.
If comparison is selected in step 3, in step 4, the observation pattern image and the predicted processing shape to be referred to are displayed on the screen.
In step 5, for example, as shown in FIG. 3B (b), the reference pattern image 315 and the observation pattern image 316 can be superimposed, so that comparison can be performed easily and accurately.
Here, the reference pattern image 315 can be moved by a pointing device such as a mouse or a trackball, and can be moved to an arbitrary position on the screen.
The determination parameter can also be selected with a pointing device such as a mouse or a trackball.
[0024]
Further, the outline portion of the observation pattern image 316 is automatically extracted, and for example, the center of gravity obtained from the primary moment of the figure is determined. Then, the reference pattern image 315 and the observation pattern image 316 are automatically overlapped by superimposing the center of gravity obtained from the primary moment of the reference pattern image 315 on the center of gravity obtained from the primary moment of the observation pattern image 316. Also good.
This makes it possible to compare the desired processed shape with the observed pattern image, and to determine whether the process pattern forming process is good or bad.
Then, the process proceeds to the next step 6 to select whether or not to measure another pattern, thereby selecting whether to return to step 1 to continue the measurement or to end step 7.
[0025]
[Embodiment 2]
With reference to FIG. 5, the inspection of the scanning electron microscope will be described using the predicted processing shape for displaying the allowable range in the observation pattern image. FIG. 5 is a measurement explanatory diagram of a scanning electron microscope according to another embodiment of the present invention.
In the scanning electron microscope of the above-described embodiment, the case where the predicted processing shape is used as the reference pattern has been described. For example, as shown in FIG. 5, when the hole pattern 501 of the resist is observed, the allowable maximum range line 502 and the allowable minimum range line 503 of the hole diameter are displayed concentrically when determining the quality of the hole formation.
[0026]
For example, when processing the hole diameter after processing as 0.2 μm as an ideal value, if it is determined that the hole is in the range of 0.18 μm to 0.22 μm, it is judged as a non-defective product. Display on the screen.
The position adjustment with the observation pattern may be performed by, for example, matching the center of gravity obtained from the first moment as in [Embodiment 1] of FIG.
[0027]
This makes it possible to judge whether a hole is good or bad by visual or so-called visual inspection without using numerical data based on the conventional direct measurement of the hole diameter (or average value if it is not a perfect circle), and at least double the efficiency. It became possible to improve more.
Here, it goes without saying that numerical data may be output on the screen and quantitatively determined by numerical values compared to the numerical data.
[0028]
[Embodiment 3]
Here, hereinafter, determination parameters as images of several determination conditions in the inspection using the scanning electron microscope from [Embodiment 3] shown in FIG. 6 to [Embodiment 8] shown in FIG. , And the measurement and the evaluation method based on the measurement will be described.
These can select determination parameters according to various functions according to a designated menu. Further, each control and calculation described below is performed by the calculation control system 311.
[0029]
With reference to FIG. 6, the measurement of the roughness of the hole pattern using the present scanning electron microscope will be described. FIG. 6 is a measurement explanatory diagram of a scanning electron microscope according to another embodiment of the present invention.
A radial image 603 as illustrated is drawn from the center of gravity 602 of the hole pattern image 601 in the display screen. Here, as a method of obtaining the center-of-gravity point 602, for example, as shown in [Embodiment 1] of FIG. 3, it is determined from the primary moment of the figure formed from the outer periphery of the hole pattern image 601.
Then, the intersection of the outer peripheral portion of the hole pattern 601 image and the radial image 603 is obtained, and the distance from the center of gravity 602 is defined as a “virtual radius”.
[0030]
Here, the average value of the virtual radii is defined as “average radius”. Then, the specified number of radial images 603 are drawn.
For example, if the radial image is drawn by changing the angle by 15 ° and rotated, a total of 24 radial images can be drawn. Each virtual radius is obtained. The variation of these 24 radial image values (for example, a value three times the standard deviation) is defined and displayed as “hole roughness”. Here, for example, a value of 3.213 nm was obtained.
[0031]
In general, when the upper surface of a hole is observed, the upper surface edge of the resist is observed as the outer peripheral portion. However, the bottom of the hole may be observed.
This observation is realized when a negative potential is applied to the sample in order to extract the secondary electron and / or reflected electron signal from the bottom surface while simultaneously reducing the acceleration voltage. In this case, the outline of the bottom surface portion (this is called the inner periphery) is clearly observed inside the outer periphery.
If the shape of the bottom surface is evaluated, the intersection between the inner peripheral portion and the moving radius 603 is obtained, and the “virtual radius” similar to the above is obtained to obtain the roughness and average radius of the bottom surface of the hole. It becomes possible. Here, the user can freely determine which of the outer peripheral portion and the inner peripheral portion is selected as the parameter.
[0032]
[Embodiment 4]
With reference to FIG. 7, the measurement of the closest distance between patterns using this scanning electron microscope will be described. FIG. 7 is a measurement explanatory diagram of a scanning electron microscope according to still another embodiment of the present invention.
The user designates desired first pattern image 701 and second pattern image 702 with a cursor, for example, in a large number of display screens. The arithmetic control system 311 measures the distance between two points connecting the outer peripheral portions of the first pattern image 701 and the second pattern image 702 from the designated display screen, and defines the minimum value as the “closest distance”. And display. Here, for example, a value of 100.234 nm was obtained.
[0033]
[Embodiment 5]
With reference to FIG. 8, the measurement of the pattern transfer fidelity of the processed pattern using this scanning electron microscope will be described. FIG. 8 is a measurement explanatory diagram of a scanning electron microscope according to still another embodiment of the present invention.
Here, reference pattern data relating to a desired pattern is extracted from a database stored in a storage device individually provided in the scanning electron microscope or a database unit of the network and displayed on a display screen. The reference pattern here is a simulation result of a processing pattern calculated based on design data, exposure conditions, and development conditions.
[0034]
As shown in FIG. 8A (a), as in [Embodiment 1] in FIG. 3, the two are compared with each other by superimposing them on the observation pattern image 802.
As a method for obtaining pattern transfer fidelity, for example, the following two methods can be used.
As a first method, evaluation points are set on the reference pattern image 801 as shown in FIG. 8B (b). The evaluation points can be set in any number and arrangement, and only equidistant points and corner points are set.
[0035]
Here, as an example, one of the evaluation points 803 is indicated by “X”. The closest distance between the evaluation point image 803 and the observation pattern image 802 is obtained. Here, the closest distance is a solid line in the figure, and a broken line indicates a line connecting the other evaluation point image 803 and the observation pattern image 802.
Then, the sum of the closest distances of the respective evaluation points is calculated, a ratio with a predetermined value, for example, the length of the outer periphery of the reference pattern is obtained, and a value (%) obtained by subtracting the ratio from 1 is obtained as the pattern transfer fidelity. Define.
[0036]
As a second method, as shown in FIG. 8C (c), a closed region formed by the outer peripheral line of the reference pattern image 801 and the outer peripheral line of the observation pattern image 802, here, from 1 to 10 shown in the figure. The sum of the areas of the portions is calculated, a ratio with a predetermined value, for example, the area of the reference pattern image 801, is obtained, and a value (%) obtained by subtracting the ratio from 1 is defined as pattern transfer fidelity. In FIG. 8 (c), for example, the pattern transfer fidelity was 78.34%.
[0037]
[Embodiment 6]
With reference to FIG. 9, the measurement of the distribution of the area using this scanning electron microscope will be described. FIG. 9 is a measurement explanatory diagram of a scanning electron microscope according to still another embodiment of the present invention.
In the display screen, predetermined pattern images 901 are distributed with various sizes. For example, the pattern after the formation of polycrystalline silicon is observed. Here, the area of the region surrounded by the closed curve of each pattern image is obtained.
[0038]
Then, by obtaining the distribution of the area, the average of the area distribution and the variation of the area, for example, three times the standard deviation are displayed. Here, for example, the average of the area distribution was 25.345 square nm, and the variation was 4.234 square nm. Further, the area distribution may be displayed. Regarding the distribution, not only the area but also the length may be evaluated and the length distribution may be displayed.
[0039]
[Embodiment 7]
With reference to FIG. 10, the display of the defective pattern location using this scanning electron microscope is demonstrated. FIG. 10 is a measurement explanatory diagram of a scanning electron microscope according to still another embodiment of the present invention.
In FIG. 10, a hole pattern image 1001 is displayed on the display screen. Here, the evaluation of the storage capacity pattern of the memory will be described.
Here, as in [Embodiment 5] of FIG. 8, the reference pattern image quoted from the database is compared with the observation pattern image. Here, for example, when it is shifted by 20% or more compared to the desired area, it is determined as a “defective pattern”, and the defective pattern is displayed as 1002, for example, by changing the color. Here, the area is also displayed, and for example, a value of 23145.627784 square nm is obtained.
[0040]
[Embodiment 8]
With reference to FIG. 11, the measurement of the distance of the pattern by a some micro area | region is demonstrated. FIG. 11 is a measurement explanatory diagram of a scanning electron microscope according to still another embodiment of the present invention.
In FIG. 11 (a), an observation pattern image 1101 is displayed on the display screen. Here, the first micro area 1102 and the second micro area 1103 are designated by using a cursor.
When a desired distance in the illustrated X direction is specified, a pattern edge in that direction is defined. And the value is calculated | required by calculating the distance between both pattern edges, and it displays.
[0041]
By this display, the length in a certain axial direction of the predetermined pattern image 1101 surrounded by the minute region can be obtained.
That is, as shown in FIG. 11 (a), the width of an arbitrary figure that could not be measured conventionally can be obtained.
Here, two micro areas have been described. However, a distance between each micro area may be obtained by displaying more micro areas. Needless to say, the direction is not limited to the illustrated X direction.
[0042]
In addition, FIG. 11 (a) also shows a reference pattern image 1104. This reference pattern image 1104 is a processing pattern simulation result calculated based on design data, exposure conditions, and development conditions. That is, it is a processing pattern of a predicted pattern. Here, the first micro area 1102 and the second micro area 1103 are designated by using a cursor. In any region, measurement in the X direction is performed.
First, a difference between the position of the side of the observation pattern image 1101 and the position of the side of the reference pattern image 1104 in the first minute area 1102 is obtained by signal processing of the arithmetic control system 311.
[0043]
Similarly, the difference between the position of the side of the observation pattern image 1101 and the position of the side of the reference pattern image 1104 was also determined in the second minute region 1103. A predetermined dimension of the observation pattern image 1101 could be obtained from the value of these differences and the dimension information of the reference pattern image 1104.
Note that when only a predetermined dimension is measured, the origin position of each minute area is determined corresponding to the observation image plane, and therefore the position of the side of the observation pattern image 1101 within the minute area is the position from the origin of the minute area. , The reference pattern image 1104 is not always necessary.
[0044]
Next, a case where a plurality of minute regions are designated as shown in FIG. 11 (b) will be described. In FIG. 11B (b), micro regions 1110, 1111 and 1112 are regions for obtaining position information in the X direction, and micro regions 1113, 1114 and 1115 are regions for obtaining position information in the Y direction. .
In FIG. 11B (b), the position of the side of the observation pattern 1101, that is, the difference between the pattern edge and the position of the side of the reference pattern was obtained from the minute regions 1110, 1111, and 1112.
[0045]
Next, the sum of the differences between the minute regions is multiplied by the average value of the intervals between the minute regions, so that the sides of the observation pattern image 1101 and the reference pattern image 1104 that intersect at the intersections 1120 and 1121 are surrounded. Approximate the area.
Similarly, the position information in the y direction, that is, the pattern edge is obtained from the minute regions 1113, 1114, and 1115, and the area surrounded by the side of the observation pattern 1101 intersecting at the intersections 1122 and 1123 and the side of the reference pattern is approximated. And asked.
[0046]
The total sum of these areas is defined as an evaluation amount with respect to the periphery of the observation pattern image 1101 from a minute area designated in advance, and when the evaluation amount is small, it is determined that the fidelity of the pattern is good.
The accuracy increases as the number of minute regions set increases, but the calculation time also increases. Therefore, in consideration of processing time and accuracy, two or more minute regions are appropriately set.
[0047]
[Embodiment 9]
A scanning electron microscope according to the present invention connected to a network will be described with reference to FIG.
FIG. 12 is an explanatory diagram of a network-connected scanning electron microscope according to still another embodiment of the present invention.
In the scanning electron microscope according to the present invention shown in the figure, an electron beam 1202 generated from an electron source 1201 is focused by a lens system 1203, and the electron beam 1201 is scanned on a substrate 1205 to be observed by a deflection system 1204. . Here, the electron beam 1202 is accelerated by setting an acceleration electrode (not shown here) of the electron source to 2 kV, for example.
[0048]
The acceleration voltage of the electron beam may be decelerated by a deceleration electrode (not shown). The substrate to be processed 1205 is installed on a stage system 1206 having a moving mechanism, and enables observation of an area above the deflection area of the electron beam 1202.
The substrate to be processed 1205 is generally a semiconductor substrate made of silicon or the like, for example, having a resist pattern formed thereon. However, it is needless to say that the present invention is not limited to the above, and there are no restrictions on the type of metal pattern, insulator pattern, etc. on the semiconductor substrate.
[0049]
The substrate to be processed 1205 is put in and out through a cassette 1207 by a transport system (not shown). Then, secondary electrons or reflected electrons generated from a pattern formed on the workpiece substrate 1205 are captured by the detection system 1208 in accordance with the irradiation of the electron beam 1202.
Here, the detection system 1208 preferably uses, for example, a scintillator-photomal secondary electron detector described in the above-mentioned publicly known example.
[0050]
Further, after the detected secondary electrons or reflected electrons are converted into electric signals, the signal processing system 1209 performs processing for converting the converted signals into image data.
Here, image data is generated in synchronization with the scanning speed of the deflection system 1204. Then, by displaying the processed signal on the display system 1210, the pattern surface shape on the substrate to be processed 1205 is displayed.
[0051]
Here, a lens system 1203, a deflection system 1204, a stage system 1206, a cassette 1207, a detection system 1208, a signal processing system 1209, a display system 1210, and a vacuum system (not shown here) for evacuating the entire apparatus are provided. For example, it is controlled by a control system 1211 having a workstation.
In addition, a determination unit 1212 that determines information entered in the control unit 1211 is added to the control unit 1211.
[0052]
Furthermore, this apparatus has an input / output unit 1213 connected to the control unit 1211, and is connected to a network 1214 typified by Ethernet, for example, via the input / output unit 1213. Connected to the network 1214 is a processing device 1215 that processes the substrate 1205 and a database unit 1216 that stores information represented by a correlation table between process conditions of the substrate 1205 and processing results. Data can be automatically exchanged between the electron microscope and the database unit 1216.
[0053]
Here, the exchange of data is automatically performed according to a predetermined program. For example, when the processing device 1215 is an electron beam drawing device connected to the developing device, information such as the electron beam irradiation amount, the developing temperature, and the developing time is transmitted via the input / output unit 1213 to the control unit 1211 and the determining unit. 1212 is input.
The observation sample is, for example, a resist pattern on a silicon substrate, in which only one wafer is drawn and developed prior to electron beam drawing. The determination unit 1212 receives information on the substrate to be processed 1205 processed by the signal processing system 1209.
[0054]
Here, for example, the area of a specific portion of the storage capacity pattern shown in FIG. FIG. 10 shows a screen display in the display system of the present scanning electron microscope. This area is defined as the area of the region surrounded by the outer periphery of the storage capacitor. The area is obtained by a predetermined method using image processing. For example, although the screen is a digital display, the method of measuring the number of minimum units (pixels) included in the above region, or when the outer peripheral part straddles the pixel, the pixel is interpolated and further divided, and the sub-pixel part There is a method of measuring the area of the region including the number.
[0055]
Further, the determination unit 1212 extracts process condition information from the database unit 1216 and determines whether the area is a desirable value. If it is not desirable, the cause is determined and the result is output to the processing device 1215.
For example, it is determined that the desired hole pattern has become small because the electron beam irradiation amount is too small, and the information is output.
As a result, the electron beam drawing apparatus which is the processing apparatus 1215 automatically executes the processing with the electron beam irradiation amount optimized from the next time. Thereby, a resist pattern having a desired dimension can be formed.
[0056]
[Embodiment 10]
A method of manufacturing a semiconductor device that feeds back the obtained information using the scanning electron microscope will be described with reference to FIG.
FIG. 13 is an explanatory diagram of a method for manufacturing a semiconductor device using a scanning electron microscope according to still another embodiment of the present invention.
In the [Embodiment 10], there are many parts in common with [Embodiment 9] in FIG.
[0057]
As shown in the figure, the substrate 1305 to be processed is processed by a processing device 1315, for example, an electron beam drawing device, and the substrate 1305 to be processed is developed by a developing device (not shown). The substrate to be processed 1305 provided in the scanning electron microscope, which is an inspection apparatus, is carried into the scanning electron microscope through a cassette 1307 that also serves as a carry-in port, a transfer port, and a temporary storage.
Then, the substrate to be processed 1305 carried into the cassette 1307 is placed on a stage system 1306 in a scanning electron microscope that is an inspection apparatus. The processed electron beam drawing pattern is inspected, and the quality of the drawing pattern is determined based on the determination parameter.
After being inspected, the substrate to be processed 1305 is unloaded by the automatic transfer system A indicated by the solid line through the cassette 1307 again. It is conveyed to the next processing apparatus 1317, for example, an etching apparatus, and the next process is processed.
[0058]
The scanning electron microscope as the inspection apparatus has an input / output unit 1313 connected to a control unit 1311, and is connected to a network 1314 typified by Ethernet, for example, via the input / output unit 1313. This function will be described together with connection to the network.
[0059]
In FIG. 13, B indicates automatic exchange of data between the database unit 1316 and the scanning electron microscope.
Here, the exchange of the data B is performed similarly to the exchange between the scanning electron microscope and the database unit 1216 in [Embodiment 9] of FIG.
Here, as in [Embodiment 9], for example, the area of a specific portion of the storage capacity pattern shown in FIG. FIG. 10 shows a part of the screen display in the display system of the scanning electron microscope. This area is defined as the area of the region surrounded by the outer periphery of the storage capacitor pattern.
As described in [Embodiment 9] of FIG. 12, for example, the screen is a digital display. However, the method for measuring the number of minimum units (pixels) included in the region, In the case of straddling pixels, there is a method in which the pixels are further divided by interpolation, and the area of the region including the sub-pixel portion is measured.
[0060]
Further, the determination unit 1312 extracts information on the process conditions from the database unit 1316, and determines whether the area is a desirable value. If not desirable, the cause is determined, and the result is output as a data flow C shown in the drawing to the processing apparatus 1315 via the network 1314.
For example, it is determined that the desired storage capacity pattern has become smaller because the electron beam irradiation amount is too small (for example, 3.5 μC / cm 2), and the information is output.
Here, the database unit 1316 is referred to, and an electron beam irradiation dose for forming a desired dimension is selected.
[0061]
The database unit 1316 includes a correspondence table of electron beam irradiation dose and formation pattern dimensions under a certain development condition. Thereby, the electron beam drawing apparatus as the processing apparatus 1315 automatically optimizes the electron beam irradiation dose from the next time (for example, 4.0 μC / cm). ² ) To perform processing. Thereby, a resist pattern having a desired dimension can be formed.
[0062]
As shown in FIG. 13, the substrate 1205 and information related thereto are transmitted and received by the wafer flow A and the data flows B and C, and the manufacturing method is effectively carried out.
In addition, it is not necessarily necessary that one scanning electron microscope is attached to one line including the first manufacturing apparatus 1315 and the second manufacturing apparatus 1317, and a plurality of manufacturing lines and one electron microscope are connected. The wafer is transferred and inspected by an automatic transfer system mechanism.
Thus, it goes without saying that the scanning electron microscope can be used for managing, setting, and maintaining the process conditions of each processing apparatus.
[0063]
In the above [Embodiment 9] and [Embodiment 10], the database sections 1216 and 1316 include not only the correspondence table of the electron beam irradiation amount and the formation pattern size of each resist but also the development conditions and the formation pattern. Correspondence table of dimensions, correspondence table of focus conditions and formation pattern dimensions, correspondence table of holding time and formation pattern dimensions until processing in a baking furnace, parameters for correcting known proximity effects in an electron beam lithography system And information of processing devices 1215 and 1315 such as a correspondence table of formation pattern dimensions.
When the processing devices 1215 and 1315 are optical transfer devices, processes corresponding to the processing devices 1215 and 1315 such as a correspondence table between focus setting conditions and formation pattern dimensions, a correspondence table between exposure amounts and formation pattern dimensions, and the like. Contains condition information.
[0064]
This information is accumulated in the database units 1216 and 1316 based on the experimental data by the manufacturing apparatus manager. Further, it may be constructed by inputting information supplied from manufacturers of the processing apparatuses 1215 and 1315. Also, it is desirable that the information is not fixed and is always updatable.
[0065]
As described above, in the prior art, only a specific length was evaluated as a measurement target, and thus high evaluation as shown in the embodiment of the present invention could not be performed.
In addition, since the exchange of information as described above has not been performed automatically, the process person can determine the huge amount of data, and the process person can feed back to the processing apparatus. Was adopted. For this reason, much time was required and it did not lead to the improvement of productivity. The method shown in this embodiment makes it possible to achieve both high productivity and high-precision processing in a method for manufacturing a semiconductor device.
[0066]
【The invention's effect】
As described above in detail, according to the configuration of the present invention, in forming a fine semiconductor device, a scanning charged particle application device suitable for simply evaluating the process conditions of a processing apparatus is used. A semiconductor device manufacturing method can be provided, which has a great effect on realizing a semiconductor device manufacturing method with high processing accuracy and increasing the productivity of the semiconductor device.
Further, according to the configuration of the present invention, the scanning charged particle application apparatus measures the dimension in the two-dimensional direction on the screen when measuring the dimension of the processing pattern, and visually displays the desired pattern and the formed pattern. , Quantitatively evaluate the difference between the two, collect basic data for adjusting process conditions, and feed back the evaluation result of the processed substrate including the processing pattern to the processing process step of the processed substrate, We provide a scanning charged particle application device that automates the manufacturing process, realizes high-precision processing, and contributes to productivity improvement.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram of pattern measurement of a conventional scanning charged particle microscope.
FIG. 2 is an explanatory diagram of an allowable error in the pattern measurement of FIG.
FIG. 3 is an explanatory diagram of a configuration and a display screen of a scanning electron microscope according to an embodiment of the present invention.
4 is a measurement flowchart using the scanning electron microscope of FIG. 3;
FIG. 5 is a measurement explanatory diagram of a scanning electron microscope according to another embodiment of the present invention.
FIG. 6 is a measurement explanatory diagram of a scanning electron microscope according to still another embodiment of the present invention.
FIG. 7 is a measurement explanatory diagram of a scanning electron microscope according to still another embodiment of the present invention.
FIG. 8 is a measurement explanatory diagram of a scanning electron microscope according to still another embodiment of the present invention.
FIG. 9 is a measurement explanatory diagram of a scanning electron microscope according to still another embodiment of the present invention.
FIG. 10 is a measurement explanatory diagram of a scanning electron microscope according to still another embodiment of the present invention.
FIG. 11 is a measurement explanatory diagram of a scanning electron microscope according to still another embodiment of the present invention.
FIG. 12 is an explanatory diagram of an Ethernet-connected scanning electron microscope according to still another embodiment of the present invention.
FIG. 13 is an explanatory diagram illustrating a method for manufacturing a semiconductor device in a scanning electron microscope according to still another embodiment of the present invention.
[Explanation of symbols]
101, 201: resist pattern
202, 502 ... Maximum allowable range line
203, 503 ... Minimum allowable range line
202, 501, 601, 1001 ... hole pattern image
301, 401, 1201 ... electron source
302, 1202, 1302 ... electron beam
303, 1203, 1303 ... lens system
304, 1204, 1304 ... deflection system
305, 1205, 1305 ... Substrate to be processed
306, 1206, 1306 ... Stage system
307, 1207, 1307 ... cassette
308, 1208, 1308 ... detection system
309, 1209, 1309 ... Signal processing system
310, 1210, 1310 ... display system
311, 1211, 1311 ... arithmetic control system
312, 1212, 1312 ... determination unit
313, 1213, 1313 ... Input / output unit
314, 1214, 1314 ... network
315, 801 ... Reference pattern image
316, 802 ... Observation pattern image
1215, 1315, 1317 ... Processing device
1216, 1316 ... Database section
602: Center of gravity
603 ... Radial radius
701: First pattern image
702 ... Second pattern image
803 ... Evaluation point
901, 1101 ... predetermined pattern
1002 ... Defect pattern
1102, 1103, 1113, 1111, 1112, 1114, 1115 ... micro area
1120, 1121, 1122, 1123 ... intersections

Claims (20)

A lens system for irradiating a focused charged particle beam to an actual pattern on a substrate to be processed that has been processed according to a design pattern by a processing apparatus, and the substrate to be processed by irradiating the substrate with the charged particle beam. A detection system that captures secondary electrons and / or reflected electrons generated from an actual pattern, a signal processing system that converts the detection signal into a two-dimensional image signal, and a display that displays the two-dimensional image signal as an observation pattern image A scanning charged particle beam application apparatus comprising a system and a memory unit,
The display system on which the observation pattern image is displayed includes means for displaying an image of the determination condition of the actual pattern based on the observation pattern,
The memory unit stores a determination parameter as an image of the determination condition, and further uses at least one of the length and area of the observation pattern image and the unevenness as the determination parameter,
When unevenness is used as the determination parameter, when the observation pattern is a hole pattern, an image of the determination condition is obtained by using the unevenness of the length from the center of gravity of the hole pattern to the outer peripheral portion or the inner peripheral portion of the hole pattern. A scanning charged particle beam application apparatus characterized by comparing with the above. A lens system for irradiating a focused charged particle beam onto an actual pattern on the substrate to be processed that has been processed according to the design pattern by the processing apparatus, and generated from the actual pattern on the substrate to be processed with the charged particle beam irradiation. A detection system that captures secondary electrons and / or reflected electrons, a signal processing system that converts the detection signal into a two-dimensional image signal, a display system that displays the two-dimensional image signal as an observation pattern image, and a memory unit A scanning charged particle beam application apparatus comprising:
Means for displaying an image of the judgment condition of the actual pattern on the same display screen of the observation pattern image;
A database unit storing information on the processing apparatus and the substrate to be processed and a network connecting the input / output unit, information on the processing apparatus from the input / output unit via the network, and the observation pattern from the database unit Receiving means for receiving an image of a judgment condition for evaluating the image, judgment means for comparing the observation pattern image with the image of the judgment condition, and processing the judgment result from the input / output unit via the network Transmission means for transmitting to the device,
The memory unit stores a determination parameter as an image of the determination condition, and further uses at least one of the length and area of the observation pattern image and the unevenness as the determination parameter,
When unevenness is used as the determination parameter, when the observation pattern is a hole pattern, an image of the determination condition is obtained by using the unevenness of the length from the center of gravity of the hole pattern to the outer peripheral portion or the inner peripheral portion of the hole pattern. A scanning charged particle beam application apparatus characterized by comparing with the above. The scanning charged particle beam application apparatus according to claim 1 or 2 ,
As means for obtaining the length of the observation pattern, a minute area designation input means for designating a plurality of minute areas on the observation pattern image, and a pattern edge in a predetermined direction determined by the observation pattern image within the plurality of minute areas A scanning charged particle beam application apparatus, comprising: first calculation means for obtaining a position; and second calculation means for obtaining a distance between the edge positions from the calculation result. In the scanning charged particle beam application apparatus according to claim 3 ,
A scanning charged particle beam application apparatus, wherein the minute region designation input means causes a cursor to be designated on a display screen. In the scanning charged particle beam application apparatus according to claim 3 ,
The scanning charged particle beam application apparatus, wherein the area of the observation pattern is a two-dimensional size of a region surrounded by an outer peripheral portion of the observation pattern image. The scanning charged particle beam application apparatus according to any one of claims 3 to 5 ,
A scanning charged particle beam application apparatus, characterized in that, when the observation pattern image is determined based on the determination parameter, the determination is made based on an upper limit value and a lower limit value set in the determination parameter. In the scanning charged particle beam application apparatus according to any one of claims 3 to 6 ,
A scanning charged particle beam application apparatus, wherein the determination parameter can be selected by a pointing device. A lens system for irradiating a focused charged particle beam to an actual pattern on a substrate to be processed that has been processed according to a design pattern by a processing apparatus, and the substrate to be processed by irradiating the substrate with the charged particle beam. A detection system that captures secondary electrons and / or reflected electrons generated from an actual pattern, a signal processing system that converts the detection signal into a two-dimensional image signal, and a display that displays the two-dimensional image signal as an observation pattern image A scanning charged particle beam application apparatus comprising a system and a memory unit,
A display system in which the observed pattern image is displayed, the reference pattern image example Bei means for displaying as an image of the determination condition of said actual pattern based on the observation pattern,
Using the transfer fidelity of the observation pattern image with respect to the reference pattern image as a determination parameter for the determination condition,
The transfer fidelity is
Predetermining a plurality of predetermined evaluation points on the outer peripheral portion of the reference pattern image, obtaining the closest distance between the evaluation point and the outer peripheral portion of the observation pattern image, and summing up the closest distances of the plurality of evaluation points A first transfer fidelity that is a ratio between the calculated value and a predetermined value;
The outer peripheral portion of the reference pattern image and the total area of the closed region formed by the outer peripheral portion of the observation pattern image are obtained, and consists of a second transfer fidelity using a ratio between the total and a predetermined value.
As means for calculating the total area of the closed region, display means for displaying the reference pattern image superimposed on the observation pattern image, and designation input of a minute region for designating a plurality of minute regions on the superimposed screen Means, a first calculation means for obtaining a difference between a pattern edge position determined from the observation pattern image and a position of a side or a point determined from the reference pattern image within the designated plurality of minute regions, and the calculation result And a second computing means for obtaining a value corresponding to an area value enclosed between the pattern edge position of the observation pattern image and the position of the side or point of the reference pattern image determined by Charged particle beam application equipment. A lens system for irradiating a focused charged particle beam onto an actual pattern on the substrate to be processed that has been processed according to the design pattern by the processing apparatus, and generated from the actual pattern on the substrate to be processed with the charged particle beam irradiation. A detection system that captures secondary electrons and / or reflected electrons, a signal processing system that converts the detection signal into a two-dimensional image signal, a display system that displays the two-dimensional image signal as an observation pattern image, and a memory unit A scanning charged particle beam application apparatus comprising:
A means for displaying a reference pattern image as an image of a determination condition of the actual pattern based on the observation pattern on the same display screen of the observation pattern image, and a database unit storing information on the processing apparatus and the substrate to be processed And a network connecting the input / output unit, and receiving means for receiving the information of the processing apparatus and the reference pattern image for evaluating the observation pattern image from the database unit via the network from the input / output unit, A judgment means for comparing the observation pattern image with the reference pattern image, and a transmission means for sending the judgment result from the input / output unit to the processing apparatus via the network ,
Using the transfer fidelity of the observation pattern image with respect to the reference pattern image as a determination parameter for the determination condition,
The transfer fidelity is
Predetermining a plurality of predetermined evaluation points on the outer peripheral portion of the reference pattern image, obtaining the closest distance between the evaluation point and the outer peripheral portion of the observation pattern image, and summing up the closest distances of the plurality of evaluation points A first transfer fidelity that is a ratio between the calculated value and a predetermined value;
A total sum of the areas of the outer peripheral portion of the reference pattern image and the closed region formed by the outer peripheral portion of the observation pattern image, and a second transfer fidelity using a ratio between the total sum and a predetermined value.
As means for calculating the total area of the closed region, display means for displaying the reference pattern image superimposed on the observation pattern image, and designation input of a minute region for designating a plurality of minute regions on the superimposed screen Means, a first calculation means for obtaining a difference between a pattern edge position determined from the observation pattern image and a position of a side or a point determined from the reference pattern image within the designated plurality of minute regions, and the calculation result And a second computing means for obtaining a value corresponding to an area value enclosed between the pattern edge position of the observation pattern image and the position of the side or point of the reference pattern image determined by Charged particle beam application equipment. The scanning charged particle beam application apparatus according to claim 8 or 9 ,
The scanning charged particle beam application apparatus, wherein the reference pattern image is a machining shape predicted from the design pattern value and a machining method. The scanning charged particle beam application apparatus according to claim 8 or 9 ,
The charged charged particle beam application apparatus characterized in that the reference pattern image shows a size range allowed for the actual pattern in a machining shape predicted from the design pattern value and a machining method. . The scanning charged particle beam application apparatus according to claim 2 or 9 ,
The storage information in the database unit includes storage means including either CAD data of the design pattern or simulation results of the actual pattern formation, or a correlation table of process conditions and processing results for changing the processing conditions of the processing apparatus. A scanning charged particle beam application apparatus comprising: The scanning charged particle beam application apparatus according to claim 12 ,
The storage means stores at least one of energy beam focus condition or irradiation amount, resist processing baking temperature and time, holding time, or proximity effect parameter in energy beam irradiation as the process condition. Scanning charged particle beam application device characterized by The scanning charged particle beam application apparatus according to any one of claims 1 to 13 ,
A scanning charged particle beam application apparatus, wherein the processing apparatus is an energy beam irradiation apparatus that irradiates either an electromagnetic wave or a charged particle beam. The scanning charged particle beam application apparatus according to any one of claims 2 to 7 or 9 to 14 ,
A scanning charged particle beam application apparatus characterized in that the position determined as a defective part is clearly indicated on a display system screen by the judging means. The scanning charged particle beam application apparatus according to any one of claims 3 to 7 or 10 to 15 ,
When there are a plurality of observation pattern images, the determination parameter may be any of the distance between the plurality of observation pattern images, the distribution of the area of the plurality of observation pattern images, or the shape of the plurality of observation pattern images. A scanning charged particle beam application apparatus characterized by using the above. A focused charged particle beam is irradiated onto the actual pattern on the substrate processed by the processing apparatus according to the design pattern by the lens system, and the actual pattern on the processed substrate is irradiated with the charged particle beam irradiation by the detection system. Scanning charged particles that capture the generated secondary electrons and / or reflected electrons, convert the detection signal into a two-dimensional image signal by a signal processing system, and display the two-dimensional image signal as an observation pattern image by a display system A microscopic method using a wire application device,
An image of a determination condition is displayed on the same display screen of the observation pattern image, and the input / output unit is connected to the input / output unit by connecting the processing unit and a database unit storing information about the substrate to be processed to the input / output unit. From the processing device information and the database unit from the database, and receiving an image of a judgment condition for evaluating the actual pattern based on the observation pattern image, and obtaining the observation pattern image based on the image of the judgment condition Determining, and transmitting the determination result from the input / output unit to the processing device via the network ,
A determination parameter is set as an image of the determination condition, and at least one of the length and area of the observation pattern image and the unevenness is used as the determination parameter.
When unevenness is used as the determination parameter, when the observation pattern is a hole pattern, an image of the determination condition is obtained by using the unevenness of the length from the center of gravity of the hole pattern to the outer peripheral portion or the inner peripheral portion of the hole pattern. A microscopic method characterized by using a scanning charged particle beam application apparatus characterized by comparing with the above . 18. The microscopic method according to claim 17 , wherein a reference pattern image is used as the image of the determination condition. A semiconductor device manufacturing method for forming a semiconductor device by processing a desired pattern on a semiconductor substrate using a plurality of processing devices, inspecting the scanning pattern with a scanning charged particle beam application device according to any one of claims 1 to 16. Atsute
A process of automatically receiving information for operating the processing apparatus from the input / output unit via a network, and after processing by the processing apparatus, an actual pattern on the semiconductor substrate is observed with the scanning charged particle microscope. Displaying an observation pattern image on the screen of the display system, and displaying an image of a determination condition based on the design pattern of the memory unit on the same screen as the observation pattern image, and information on the processed semiconductor substrate A step of receiving an image of a determination condition for diagnosing the observation pattern image from the stored database unit from the input / output unit; a determination step of determining the observation pattern image and the image of the determination condition in association with each other by the determination unit; , Automatically transferring the determination result from the input / output unit to the processing apparatus via a network, and changing a process condition for operating the processing apparatus based on the determination result Semiconductor device manufacturing method which comprises a degree. 20. The semiconductor device manufacturing method according to claim 19 , wherein a plurality of processing devices and the scanning charged particle beam application device are connected by a transport mechanism, and the semiconductor substrate is connected to the scanning charged particle beam from the first processing device. A semiconductor that is transported to an inspection apparatus configured by an application apparatus, and automatically transported from the inspection apparatus configured by the scanning charged particle beam application apparatus to the second processing apparatus after completion of the inspection by the inspection apparatus. Device manufacturing method.

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