JP2000058410A - Scanning charged particle beam applying apparatus and microscoping method and semiconductor manufacturing method using the device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a scanning charged particle applying apparatus which realizes automation of manufacturing steps and a processing in a high precision by evaluating pattern images by measuring two dimensional sizes on a screen. SOLUTION: This charged particle beam applying apparatus is provided with an input and output means 313, which detects a reference pattern image 315 and a signal obtained by radiating charged particle beam to a real pattern processed by a processing device by a detecting system 308, displays a pattern which processed the detected signal by a signal processing system 309 as a monitoring pattern image 316 with the reference pattern image 315 together on the same screen, compares both the pattern images by a judging part, based on a judging parameter and outputs the result to the processing device via a network 314.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning charged particle beam application apparatus and a method for manufacturing a semiconductor device, and more particularly to a method for observing a processed shape in forming a fine semiconductor device on a semiconductor substrate. The present invention relates to a scanning type charged particle beam application device having high accuracy and high function, and a method for manufacturing a semiconductor device using the same with high processing accuracy.

[0002]

2. Description of the Related Art In a method of manufacturing a semiconductor device, a technique of forming a pattern is generally called "lithography". In the lithography, it is desirable that the design dimension of the pattern and the dimension after processing are the same. That is, the fact that the desired element size of the pattern is equal to the element size after processing indicates that high-precision processing has been performed.
However, in recent years, as the miniaturization of the pattern has progressed, the required drawing accuracy has become higher and the processing thereof has become more difficult.

[0003] The reason is, for example, that the processing size is 200
This is because, at the nanometer level, dimensional fluctuation due to diffusion of an acid substance in the bake treatment of the chemically amplified resist for pattern formation cannot be ignored. In addition, the processing dimensions change due to the variation of the effective irradiation area (generally called the proximity effect) due to the scattering of incident energy rays and the effect of interference between energy rays, and the amount of the change cannot be ignored. It is.

[0004] Therefore, high-precision observation and evaluation of a processed pattern is essential. This is because the process conditions can be accurately evaluated by accurately evaluating the processed pattern dimensions, and the process conditions can be optimized by feeding back the pattern dimensions to a semiconductor device manufacturing apparatus. This is because As a conventional evaluation device, for example, there is an electron microscope for length measurement described in Japanese Patent Application Laid-Open No. 9-166428. In this technique, first, a converged electron beam is irradiated on a sample to be observed and scanned. Then, at that time, the secondary electron beam generated from the sample to be observed is captured by the detection system, and the scanning line and the detection signal are synchronized, thereby displaying the image of the sample to be observed on the display system and adjusting the desired pattern size. It is a device intended for measurement. At that time,
In order to cope with a change in pattern size due to charging due to electron beam irradiation and “contamination”, a means for recording a temporal change in pattern size is provided, and a predetermined calculation method, such as time This is a length-measuring electron microscope including means for calculating a pattern dimension at a predetermined time by an extrapolation method. In the above-mentioned electron microscope for length measurement, the length and width of the pattern are simply measured. In general, an electron microscope for length measurement is a device that has a characteristic that it scans in one direction and can obtain considerable accuracy in the measurement in the scanning direction. For this reason, there were techniques for microscopic methods and inspection methods that took advantage of this feature.However, accurate techniques were used by using the degree of coincidence between multiple patterns and the fidelity between the observed pattern and the processed pattern resulting from processing as designed. There was no technology that could make a decision.

[0005]

The problem in the above-mentioned conventional technique will be described with reference to FIGS. FIG. 1 is an explanatory diagram of a pattern measurement of a conventional scanning charged particle microscope for length measurement, and FIG. 2 is an explanatory diagram of an allowable error in the pattern measurement of FIG. The first problem is that, when measuring the dimensions of the actual pattern of the sample to be observed processed by the scanning charged particle beam application apparatus, the charged particle beam improves the S / N ratio.
A two-dimensional scanning method of scanning the sample to be observed in one direction and moving the scanning charged particle beam in the one direction in a direction orthogonal to the scanning direction is performed. Only the dimension in the direction, for example, the width of the resist pattern 101 in the specific direction on the screen as shown in FIG. 1 can be measured, and it is determined whether or not the width of the resist pattern 101 is formed in a desired dimension area. It does not have the function to perform.

The fact that it is not possible to measure only this specific one-dimensional dimension means that, as shown in FIG.
03 was displayed on the same screen, and the quality of the actual pattern after processing could not be easily evaluated. Also, with the desired pattern,
Displaying the actual pattern after processing on the same screen and quantitatively evaluating the difference, reflecting the evaluation result in the process conditions for operating the processing apparatus, or collecting basic data of the process conditions There was a problem that I could not do it.
Furthermore, a method of manually forming a matrix on the resist pattern of the sample to be observed using the focus of the charged particle beam in one direction as a parameter and the dose of the charged particle beam in the other direction as a parameter to determine an optimal condition is also manual. However, there has been a problem that it has become a bottleneck for the advancement of processing technology, which cannot be realized except through the use of a tool.

Second, the results of evaluation of a substrate to be processed including a processed actual pattern have basically been merely evaluation data obtained by a scanning charged particle beam application apparatus. In addition, feedback of the evaluation to a processing process step of a substrate to be processed has been performed manually. For this reason, not only the process steps are changed, but also the process steps themselves are not automated, so that it takes time to change the process conditions of the steps, the precision is not sufficiently improved, and the productivity is not improved. There was a problem.

[0008]

An example of means for solving the problem will be described. The first problem is that an observation pattern observed by a scanning charged particle beam application device and a reference pattern (a processing pattern calculated based on design data or the like in this specification) are used as judgment condition images corresponding to the observation pattern. Inspection by using a scanning charged particle beam application device equipped with a means for displaying the processing form or design data by simulation on the same screen on the same screen, or by applying it to an observation pattern based on parameters defined as judgment condition images Further, conditions are set in the observation image, judgment and inspection are performed, or information from another processing device is automatically input via the network, and information obtained from a signal obtained by the signal processing system is transmitted to the network. Using a scanning type charged particle beam application device configured to have input / output means to automatically output via The determination means automatically inputs information from another processing apparatus via a network, and is connected to a database storing information on the substrate to be processed, and diagnoses information obtained by the signal processing system. Image from the signal processing system corresponding to the image of the judgment condition and the image of the judgment condition, and judges the information based on the judgment result. The problem can be solved by performing an inspection using a scanning type charged particle beam application device or the like configured to have a function of automatically outputting to the processing device via the network.

The lens system irradiates a focused charged particle beam to a processed actual pattern on a substrate to be processed in accordance with a design pattern by a processing apparatus, and a detection system causes the processed pattern to be irradiated along with the charged particle beam irradiation. Secondary electrons and / or reflected electrons generated from the actual pattern on the substrate are captured, the detection signal is converted to a two-dimensional image signal by a signal processing system, and the two-dimensional image signal is used as an observation pattern image by a display system. A microscopic method using a scanning charged particle beam application apparatus for displaying, wherein an image of a judgment condition is displayed on the same display screen of the observation pattern image, and a database in which information on the processing apparatus and the substrate to be processed is stored. Unit and the input / output unit are connected by a network, and the information on the processing apparatus and the observation pattern image are read from the database unit via the network from the input / output unit Receiving an image of a determination condition for evaluation, determining the observation pattern image based on the image of the determination condition, and transmitting the determination result from the input / output unit to the processing apparatus via the network. The problem can be solved by observing and inspecting using a microscopic method using a scanning charged particle beam application device.

Another problem is that in a method of manufacturing a semiconductor device, a plurality of processing devices and the scanning charged particle beam application device are connected by a transport mechanism, and the semiconductor substrate is separated from the first processing device. For example, the scanning type charged particle beam application apparatus is loaded into an inspection apparatus via a carry-in unit, inspected by the inspection apparatus using the scanning type charged particle beam application apparatus, and after the inspection, the scanning type The problem can be solved by carrying out, for example, through an unloading section from an inspection apparatus constituted by a charged particle beam application apparatus and automatically transporting the same to the second processing apparatus.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. First, an outline of an embodiment of the present invention will be described. First, a process is evaluated by comparing an actual image obtained by the charged particle beam application device with an image of a determination condition or a two-dimensional reference image as an image of a determination condition. Secondly, a line or an image on the processing pattern is defined as a judgment parameter as a judgment condition image, and a line or an image of a real image by a charged particle beam application device is compared in accordance with the definition to evaluate a process. . Third, at least two or more observation pattern images by the charged particle beam application device are relatively compared to evaluate the process. Thus, it is roughly divided into three. These will be described sequentially, but in the following embodiments, the case where the charged particle beam is an electron beam will be described. Therefore, the charged particle beam application device according to the present invention will be described as a scanning electron microscope according to the present invention. However, in each embodiment, the present invention can be applied to the case where another charged particle beam including an ion beam is used.

[Embodiment 1] FIG. 3 is an explanatory diagram of a configuration and a display screen of a scanning electron microscope according to an embodiment of the present invention. The scanning electron microscope according to the present invention shown in FIG.
02 is focused by a lens system 303, and the electron beam 302 is deflected by a deflection system 304, so that the substrate 30 to be processed is
5 is scanned two-dimensionally. The two-dimensional scanning is performed by a two-dimensional scanning method in which horizontal scanning is performed on the substrate to be processed 305 from left to right, and vertical scanning in which the horizontal scanning is vertically moved at a constant interval. The electron beam 302 is accelerated to, for example, 2 kV by an acceleration electrode (not shown).

The acceleration voltage of the electron beam may be decelerated by a deceleration electrode (not shown). The substrate to be processed 305 is mounted on a stage system 306 having a moving mechanism, and enables observation of an area larger than the deflection area of the electron beam 302. The substrate to be processed 305 is generally a semiconductor substrate such as silicon on which a resist pattern is formed, for example. However, it is needless to say that the present invention is not limited to a resist pattern on a semiconductor substrate such as silicon as described above, and there is no limitation on the type of the metal pattern, the insulator pattern and the like on the semiconductor substrate.

The substrate to be processed 305 is loaded and unloaded through a transfer line (not shown) via a cassette 307. Then, secondary electrons and / or reflected electrons generated from the pattern formed on the substrate to be processed 305 due to the electron beam irradiation are captured by the detection system 308. Here, detection system 3
For 08, a known scintillator / photomulti type secondary electron detector or semiconductor detector is used, for example.

Further, after converting the detected secondary electrons and / or reflected electrons into electric signals, a signal processing system 309 performs a process of converting the converted signals into image data signals. In this process, an image data signal is generated in synchronization with the scanning speed of the deflection system 304. Then, by displaying the processed image data signal as an image on the display system 310, the pattern shape on the processing target substrate 305 can be displayed.

Here, a lens system 303, a deflection system 304,
A stage system 306, a cassette 307, a detection system 308, a signal processing system 309, a display system 310, and a vacuum system (not shown here) for evacuating the entire apparatus include, for example, an arithmetic control system 311 including a workstation. Is controlled by The operation control system 311 includes the operation control system 3.
A judgment unit 312 for judging the information entered into 11 is added.

Further, the present apparatus may take a form connectable to the following network. That is, the information signal input / output unit 31 connected to the control unit 311
For example, a dedicated local network such as a network 314 represented by Ethernet or an optical cable is constructed and connected to the network via the input / output unit 313.

The network is connected to a processing apparatus for processing the substrate to be processed and an apparatus for collecting a database storing information such as a “correlation table between process conditions and processing results” of the substrate to be processed 305. Data can be automatically exchanged between the database and the main scanning electron microscope. Then, on the screen of the display system 301,
As shown in FIG. 3B, a reference pattern 315 to be processed is superimposed on the observed pattern 316 and can be displayed.

Here, the reference pattern 315 is "the simulation result of the processed pattern calculated based on the design data, exposure conditions, and development conditions or the design data itself" as described above. That is, the predicted processing mode. Alternatively, as described later, it may be used for a region indicating an allowable range of an observation pattern to be observed.

Here, the measurement using the present scanning electron microscope will be described with reference to the flowchart shown in FIG. FIG. 4 is a measurement flowchart using the scanning electron microscope of FIG. First, a sample (substrate to be processed) is loaded into a scanning electron microscope and measurement is started. Various detections, displays, calculations, and the like in the following steps 1 to 7 are controlled and executed by the calculation control system 311. In step 1, a pattern portion to be measured on a sample is specified. For this specification, the measurement location may be registered in advance in a storage unit (not shown) of the scanning electron microscope, and may be automatically specified from the arithmetic control system 311 or may be specified manually by the measurer from the screen. Good.

In step 2, observation of a pattern image on the sample is executed. That is, detection is performed by the detection system 308,
It is displayed on the display system 310. Here, for example, it is assumed that the width of a resist pattern formed by normal KrF excimer laser exposure is measured as shown in FIG. 3B. The energy beam for the resist processing may be an energy beam capable of forming a pattern of an electron beam, an X-ray, and an ion beam in addition to the KrF excimer laser.

Next, in step 3, whether or not to display the reference pattern data, that is, the observed pattern image 316 and the displayed reference pattern image 31 are displayed.
The user selects whether or not 5 is to be compared. When the comparison is selected, the reference pattern image 315 is displayed. If no comparison is selected, this corresponds to performing normal line width measurement. After the measurement is completed, in step 3a, whether or not to observe another pattern is selected again. If another pattern is to be observed, the process returns to step 1, and if no other pattern is to be observed, step 7 ends.

The scanning electron microscope is provided with an individual storage device, and stores information on a predicted processing shape (CAD data) obtained by a normal simulation from a design pattern, exposure conditions, and development conditions. They are,
The observed pattern image is compared with the reference pattern image, and is used as a judgment parameter for judging the quality. Further, the scanning electron microscope is connected to a network, and the same data as that of the individual storage device is stored in an external database. The data can be received and referenced via the network. If comparison is selected in step 3, in step 4, the observation pattern image and the predicted processing shape to be referred to are displayed on the screen. In step 5, for example, as shown in FIG. 3B, the reference pattern image 315 and the observation pattern image 316 can be superimposed, so that comparison can be performed easily and accurately. Here, the reference pattern image 315
Can be moved by a pointing device such as a mouse or a trackball, and can be moved to an arbitrary position on the screen. The above judgment parameters can also be selected by a pointing device using a mouse, a trackball or the like.

Further, the contour of the observation pattern image 316 is automatically extracted, and, for example, the center of gravity determined from the first moment of the figure is determined. Then, the reference pattern image 31
By superimposing the center of gravity obtained from the first moment of the fifth observation pattern image 316 on the center of gravity obtained from the first moment of the observation pattern image 316, an operation of automatically overlapping the reference pattern image 315 and the observation pattern image 316 may be performed. This makes it possible to compare the desired processed shape with the observed pattern image, and to judge the quality of the process for forming the processed pattern. Then, proceeding to the next step 6, by selecting whether or not to measure another pattern, it is returned to step 1 to select whether to continue the measurement or to end step 7.

[Embodiment 2] An inspection of a scanning electron microscope will be described with reference to FIG. 5 by using a predicted processing shape for displaying an allowable range in an observation pattern image. FIG.
FIG. 7 is an explanatory diagram of measurement by a scanning electron microscope according to another embodiment of the present invention. In the scanning electron microscope of the above embodiment, the case where the processing predicted shape is used as the reference pattern has been described, but the present invention is also applicable to the case where the allowable range of the processed observation pattern is displayed. For example, FIG.
As shown in (2), when the hole pattern 501 of the resist is observed, the allowable maximum range line 502 and the minimum allowable range line 503 of the hole diameter are displayed concentrically in determining the quality of the hole formation.

For example, the hole diameter after processing is 0.2 μm.
When processing is performed with m as an ideal value, 0.18 μm to 0.2
When it is determined that a hole is formed within a range of 2 μm, the hole is displayed as a reference pattern on the screen. Position adjustment with the observation pattern
For example, as in [Embodiment 1] of FIG. 3, the center of gravity determined from the first moment may be matched.

Thus, the quality of the hole can be determined visually, that is, simply by looking at the hole, without using the numerical data obtained by the conventional direct measurement of the hole diameter (the average value when the hole is not a perfect circle). It was possible to improve at least twice or more. Here, it goes without saying that numerical data may be output on the screen and quantitatively determined by numerical values compared with the numerical data.

[Embodiment 3] Hereafter, from [Embodiment 3] shown in FIG. 6 to [Embodiment 8] shown in FIG. 13, some of the inspections using the scanning electron microscope will be described. An example of a judgment parameter as an image of a judgment condition, its measurement, and an evaluation method based thereon will be described. These follow the specified menu,
It is possible to select a judgment parameter according to various functions. The following controls and calculations are performed by the arithmetic control system 31.
1 is implemented.

Referring to FIG. 6, measurement of roughness of a hole pattern using the present scanning electron microscope will be described. FIG. 6 is an explanatory diagram of measurement by a scanning electron microscope according to another embodiment of the present invention. A radial image 603 as shown is drawn from the center of gravity 602 of the hole pattern image 601 on the display screen. Here, the method of finding the center of gravity point 602 is determined from the first moment of a figure formed from the outer peripheral portion of the hole pattern image 601 as in [Embodiment 1] of FIG. Then, the hole pattern 60
The intersection between the outer peripheral portion of one image and the radial image 603 is obtained, and the center of gravity 6
The distance from 02 is defined as “virtual radius”.

Here, the average value of the virtual radius is defined as "average radius". Then, a specified number of radial images 603 are drawn. When the radial image is drawn by changing the angle by, for example, 15 °, a total of 24 radial images can be drawn.
A virtual radius there is obtained. The variation (for example, three times the standard deviation) of the 24 radial image values is defined and displayed as “hole roughness”. here,
For example, a value of 3.213 nm was obtained.

Generally, when the top surface of a hole is observed, the top edge of the resist is observed as an outer peripheral portion. However, the bottom of the hole may be observed. This observation is realized when a negative potential is applied to the sample in order to lower the accelerating voltage and at the same time extract secondary electron and / or reflected electron signals from the bottom surface. In this case, the outline of the bottom portion (this is referred to as the inner peripheral portion) is clearly observed inside the outer peripheral portion. If the shape of the bottom surface is to be evaluated, an intersection between the inner peripheral portion and the moving radius 603 is obtained,
By obtaining the “virtual radius” similar to the above, it is possible to obtain the roughness and the average radius of the hole bottom surface. Here, the user can freely determine which of the outer peripheral portion and the inner peripheral portion is to be selected as the parameter.

[Embodiment 4] The measurement of the closest distance between patterns using the present scanning electron microscope will be described with reference to FIG. FIG. 7 is an explanatory diagram of measurement by a scanning electron microscope according to still another embodiment of the present invention. A user designates a desired first pattern image 701 and desired second pattern image 702 on a large number of display screens, for example, with a cursor. The arithmetic control system 311 measures the distance between two points connecting the outer peripheral portions of the first pattern image 701 and the second pattern image 702 from the designated display screen, and defines the minimum value as “nearest distance”. To display. Here, for example, 10
A value of 0.234 nm was determined.

[Embodiment 5] The measurement of the pattern transfer fidelity of a processed pattern using the present scanning electron microscope will be described with reference to FIG. FIG. 8 is an explanatory diagram of measurement by a scanning electron microscope according to still another embodiment of the present invention. Here, reference pattern data relating to a desired pattern is extracted from a database stored in a storage device individually provided in the present scanning electron microscope or a database section of the network and displayed on a display screen. The reference pattern here is a simulation result of a processed pattern calculated based on design data, exposure conditions, and development conditions.

As shown in FIG. 8A, as in [Embodiment 1] of FIG. 3, the two are compared by superimposing them on the observation pattern image 802. For example, the following two methods can be used to determine the pattern transfer fidelity. As a first method, an evaluation point is set on the reference pattern image 801 as shown in FIG. The number and arrangement of the evaluation points can be freely set, and only equally spaced points and corner points are set.

Here, as an example, one of the evaluation points 803 is indicated by an “X” mark. This evaluation point image 803
And the closest distance of the observation pattern image 802 are obtained. Here, the closest distance is a solid line in the drawing, and a broken line indicates a line connecting the other evaluation point image 803 and the observation pattern image 802. Then, the sum of the closest distances of each evaluation point is calculated, a ratio with a predetermined value, for example, the length of the outer peripheral line of the reference pattern is obtained, and a value (%) obtained by subtracting the ratio from 1 is used as the pattern transfer fidelity. Define.

As a second method, as shown in FIG. 8 (c), a closed area formed by the outer peripheral line of the reference pattern image 801 and the outer peripheral line of the observation pattern image 802, here, from 1 to 1 shown in FIG. The sum of the ten ten areas is calculated, and a ratio with a predetermined value, for example, the area of the portion of the reference pattern image 801 is obtained, and a value (%) obtained by subtracting the ratio from 1 is defined as the pattern transfer fidelity. I do. In FIG. 8C, for example, the pattern transfer fidelity was 78.34%.

[Embodiment 6] With reference to FIG. 9, the measurement of the area distribution using the present scanning electron microscope will be described. FIG. 9 is an explanatory diagram of measurement by a scanning electron microscope according to still another embodiment of the present invention. In the display screen, predetermined pattern images 901 are distributed with various sizes. For example, the pattern after the formation of the polycrystalline silicon is observed. Here, the area of a region surrounded by a closed curve of each pattern image is obtained.

Then, by obtaining the distribution of the area, the average of the area distribution and the variation of the area, for example, three times the standard deviation are displayed. Here, for example, the average of the area distribution is 25.345 square nm, and the variation is 4.23.
A value of 4 square nm was determined. Further, the distribution of the area may be displayed. As for the distribution, not only the area but also the length may be evaluated and the length distribution may be displayed.

[Embodiment 7] With reference to FIG. 10, the display of a defective pattern portion using the present scanning electron microscope will be described. FIG. 10 is an explanatory diagram of measurement by a scanning electron microscope according to still another embodiment of the present invention. FIG.
, A hole pattern image 1001 is displayed on the display screen. Here, the evaluation of the storage capacity pattern of the memory will be described. Here, as in [Embodiment 5] of FIG. 8, the reference pattern image quoted from the database and the observed pattern image are compared. Here, for example, if the area is shifted by 20% or more compared to the desired area, it is determined as a “defective pattern”, and the defective pattern is displayed as 1002, for example, with a different color. Here, the area is also displayed, and for example, a value of 23145.62784 square nm was obtained.

[Embodiment 8] Referring to FIG. 11, measurement of a pattern distance by a plurality of minute regions will be described. FIG. 11 is an explanatory diagram of measurement by a scanning electron microscope according to still another embodiment of the present invention. Figure 11 (a)
In, the observation pattern image 1101 is displayed on the display screen. Here, the first minute area 1102 and the second minute area 1103 are designated by using a cursor. When a desired distance in the illustrated X direction is designated, a pattern edge in that direction is defined. Then, by calculating the distance between both pattern edges, its value is obtained,
indicate.

With this display, the length in a certain axial direction of the predetermined pattern image 1101 surrounded by the minute area can be obtained. That is, as shown in FIG. 11A, the width of an arbitrary figure which cannot be measured conventionally can be obtained. Here, two micro regions have been described, but more micro regions may be displayed, and the distance between each of the micro regions may be obtained. It goes without saying that the direction is not limited to the illustrated X direction.

FIG. 11A also shows a reference pattern image 1104. This reference pattern image 110
Reference numeral 4 denotes a simulation result of a processing pattern calculated based on design data, exposure conditions, and development conditions. That is, it is the processing form of the predicted pattern. Here, the first minute region 1102 and the second minute region 1103
Is specified by using a cursor. It is assumed that the measurement in the X direction is performed for any of the regions. First, the difference between the position of the side of the observation pattern image 1101 and the position of the side of the reference pattern image 1104 in the first minute region 1102 is obtained by signal processing of the arithmetic control system 311.

Similarly, the difference between the position of the side of the observation pattern image 1101 and the position of the side of the reference pattern image 1104 was determined also in the second minute area 1103. From the values of these differences and the dimensional information of the reference pattern image 1104, the predetermined dimensions of the observation pattern image 1101 could be obtained.
When only a predetermined size is measured, the origin position of each minute area is determined in correspondence with the observation image plane. Therefore, the position of the side of the observation pattern image 1101 in the minute area is determined from the origin of the minute area. The reference pattern image 1104 is not necessarily required.

Next, a case where a plurality of minute regions are designated as shown in FIG. 11B will be described. In FIG. 11B, minute regions 1110, 1111 and 11 are shown.
Reference numeral 12 denotes an area for obtaining position information in the X direction, and minute areas 1113, 1114, and 1115 are areas for obtaining position information in the Y direction. In FIG. 11 (b),
From the minute regions 1110, 1111, and 1112, the difference between the position of the side of the observation pattern 1101, that is, the difference between the pattern edge and the position of the side of the reference pattern was obtained.

Next, by multiplying the sum of the differences between the minute regions by the average value of the intervals between the minute regions, the intersection 1120 is obtained.
The area surrounded by the side of the observation pattern image 1101 and the side of the reference pattern image 1104 that intersect with each other is obtained by approximation. Similarly, minute regions 1113, 1114, and 11
The position information in the y direction, that is, the pattern edge, was obtained from No. 15 and the area surrounded by the side of the observation pattern 1101 intersecting at the intersections 1122 and 1123 and the side of the reference pattern was obtained by approximation.

The sum of these areas is calculated from the previously specified minute area to the periphery of the observation pattern image 1101 and defined as an evaluation amount. When the evaluation amount is small, it is determined that the fidelity of the pattern is good. . In addition, although the accuracy improves as the set number of minute regions increases, the calculation time also increases.
In consideration of processing time and accuracy, two or more plural small areas are appropriately set.

[Embodiment 9] A scanning electron microscope according to the present invention connected to a network will be described with reference to FIG. FIG. 12 is an explanatory diagram of a network-connected scanning electron microscope according to still another embodiment of the present invention. The scanning electron microscope according to the present invention shown in FIG.
The beam is converged at 203 and the electron beam 1201 is scanned by a deflection system 1204 on a substrate to be processed 1205 to be observed.
Here, the electron beam 1202 is accelerated by setting an acceleration electrode (not shown here) of the electron source to, for example, 2 kV.

The acceleration voltage of the electron beam may be decelerated by a deceleration electrode (not shown). Substrate to be processed 1205
Is mounted on a stage system 1206 having a moving mechanism, and enables observation of an area larger than the deflection area of the electron beam 1202. The substrate to be processed 1205 is generally a semiconductor substrate such as silicon on which a resist pattern is formed, for example. However, it is needless to say that the present invention is not limited to the above, and there is no limitation on the type of the metal pattern on the semiconductor substrate, the pattern of the insulator, and the like.

The substrate to be processed 1205 is loaded and unloaded via a cassette 1207 by a transport system, not shown. Then, with the irradiation of the electron beam 1202, the processing target substrate 12
Secondary electrons or reflected electrons generated from the pattern formed on the pattern 05 are captured by the detection system 1208. Here, as the detection system 1208, it is preferable to use, for example, a scintillator / photomar type secondary electron detector described in the above-mentioned known example.

Further, after converting the detected secondary electrons or reflected electrons into electric signals, the signal processing system 1209 performs a process of converting the converted signals into image data. Here, image data is generated in synchronization with the scanning speed of the deflection system 1204. Then, the processed signal is displayed on the display system 1.
At 210, by displaying, the processed substrate 12
05 is displayed.

Here, the lens system 1203 and the deflection system 120
4, stage system 1206, cassette 1207, detection system 1
208, a signal processing system 1209, a display system 1210, and a vacuum system (not shown here) for evacuating the entire apparatus include, for example, a control system 1 having a workstation.
It is controlled by 211. The control unit 1211 includes:
Judgment unit 121 for judging information entered into control unit 1211
2 is added.

Further, the present apparatus has an input / output unit 1213 connected to the control unit 1211.
Is connected to a network 1214 represented by, for example, Ethernet. The network 121
Reference numeral 4 denotes a processing apparatus 1215 that has processed the substrate to be processed 1205.
And a database unit 121 storing information typified by a correlation table between a process condition of the substrate to be processed 1205 and a processing result.
6 is connected, and automatic exchange of data between the scanning electron microscope and the database unit 1216 is possible.

Here, the exchange of data is automatically performed according to a predetermined program. For example,
When the processing device 1215 is an electron beam lithography device connected to a developing device, information such as the amount of irradiation of the electron beam, the developing temperature, and the developing time is transmitted to the control unit 1 via the input / output unit 1213.
211 and the judgment unit 1212. As the observation sample, for example, a resist pattern on a silicon substrate, prior to electron beam drawing of a large number of wafers,
Only one sheet has been drawn and developed. The determination unit 1212 receives information on the substrate to be processed 1205 processed by the signal processing system 1209.

Here, for example, the area of a specific portion of the storage capacitance pattern shown in FIG. 10 is to be measured. FIG. 10 shows a screen display in the display system of the present scanning electron microscope. This area is defined as the area of a region surrounded by the outer peripheral portion of the storage capacitor. The area is determined by a predetermined method using image processing. For example, although the screen is a digital display, a method for measuring the number of minimum units (pixels) included in the above-described area, or when the outer peripheral portion extends over pixels, interpolates the pixel and further divides the sub-pixel portion. There is a method of measuring the area of the region including the number.

Further, the judging unit 1212 extracts information on the process conditions from the database unit 1216, and judges whether the area is a desired value. If it is not desirable, the cause is determined and the result is output to the processing device 1215. For example, it is determined that the desired hole pattern has become smaller because the electron beam irradiation amount is too small, and the information is output. Thereby, the processing apparatus 1
The electron beam drawing apparatus 215 automatically performs the processing from the next time with the amount of irradiation of the electron beam optimized. As a result, a resist pattern having desired dimensions can be formed.

[Embodiment 10] A method of manufacturing a semiconductor device for feeding back obtained information using the above-mentioned scanning electron microscope will be described with reference to FIG. FIG. 13 is an explanatory diagram of a method for manufacturing a semiconductor device using a scanning electron microscope according to still another embodiment of the present invention. In [Embodiment 10], there are many portions common to [Embodiment 9] in FIG. 12, and the repetitive description of the portions will be omitted because it is complicated, and the description will be focused on the characteristic portions.

As shown in the figure, a substrate to be processed 1305 is processed by a processing device 1315, for example, an electron beam drawing device.
The substrate to be processed 1305 is developed by a developing device (not shown), and thereafter, by the automatic transfer system A shown by a solid line in the drawing, a loading port, a transfer port, and a temporary port of the substrate to be processed 1305 provided in the scanning electron microscope as the inspection device. It is carried into the scanning electron microscope via a cassette 1307 also serving as a storage. The substrate 1305 carried into the cassette 1307 is placed on a stage system 1306 in a scanning electron microscope as an inspection device. The processed electron beam drawing pattern is inspected, and the quality of the drawing pattern is determined based on the determination parameter. After being inspected, the processed substrate 1305 is returned to the cassette 130 again.
7 and is carried out by an automatic transfer system A shown by a solid line in the drawing. It is transported to the next processing device 1317, for example, an etching device, and processed in the next step.

The scanning electron microscope as the inspection apparatus has an input / output unit 1313 connected to a control unit 1311. The input / output unit 1313 is connected to a network 1314 represented by, for example, Ethernet. However, this function will be described together with connection to a network.

In FIG. 13, B is the database unit 1
316 and an automatic exchange of data with the scanning electron microscope. Here, the exchange of the data B is performed in the same manner as the exchange between the scanning electron microscope and the database unit 1216 in [Embodiment 9] of FIG. Here, similarly to [Embodiment 9], for example,
The area of a specific portion of the storage capacitance pattern shown in FIG. 10 is to be measured. FIG. 10 shows a part of a screen display in a display system of the scanning electron microscope. This area is defined as the area of a region surrounded by the outer peripheral portion of the storage capacitor pattern. The method for obtaining the area is shown in FIG.
As described in [9], for example, the screen is a digital display, but the method of measuring the number of the minimum units (pixels) included in the above-mentioned area, or the case where the outer peripheral portion extends over the pixels, interpolates the pixels and further divides the pixels Then, there is a method of measuring the area of the region including the sub-pixel portion.

Further, the judging unit 1312 extracts information on the process conditions from the database unit 1316, and judges whether the area is a desired value. If it is not desirable, the cause is determined, and the result is output to the processing device 1315 via the network 1314 as the illustrated data flow C. For example, it is determined that the electron beam irradiation amount is too small (for example, 3.5 μC / cm 2), so that the desired storage capacitance pattern is reduced, and the information is output. Here, referring to the database unit 1316, an electron beam irradiation amount for forming a desired size is selected.

The database section 1316 includes a correspondence table between the electron beam irradiation amount and the size of the formed pattern under a certain developing condition. As a result, the electron beam lithography apparatus, which is the processing apparatus 1315, automatically executes the processing in the state in which the electron beam irradiation amount has been optimized (for example, 4.0 μC / cm ² ) from the next time. As a result, a resist pattern having desired dimensions can be formed.

As shown in FIG. 13, the flow A of the wafer
The substrate to be processed 1205 and information related thereto are transmitted and received by the data flows B and C, and the manufacturing method is effectively performed. Further, it is not inevitable that one scanning electron microscope is attached to one line including the first manufacturing apparatus 1315 and the second manufacturing apparatus 1317, and a plurality of manufacturing lines and one
An electron microscope is connected, and the wafer is transferred and inspected by an automatic transfer mechanism. As described above, it goes without saying that the scanning electron microscope can be used for managing, setting, and maintaining the process conditions of each processing apparatus.

In the above [Ninth Embodiment] and [Embodiment 10], the database units 1216, 13
Reference numeral 16 shows not only a correspondence table between the electron beam irradiation amount of each resist and the size of the formed pattern, but also a correspondence table between the development conditions and the formed pattern size, a correspondence table between the focus conditions and the formed pattern size, and a baking furnace. The table includes information on the processing devices 1215 and 1315, such as a correspondence table between the lay-out time until formation and the size of the formed pattern, a correspondence table between the parameter for correcting the proximity effect known in the electron beam lithography apparatus and the formed pattern size, and the like. I have. When the processing devices 1215 and 1315 are optical transfer devices, a process corresponding to the processing devices 1215 and 1315 such as a correspondence table of focus setting conditions and formed pattern dimensions, a correspondence table of exposure amounts and formed pattern dimensions, and the like. Contains condition information.

This information is stored in the database units 1216 and 1316 by the manufacturing equipment manager based on the experimental data. Further, the information processing apparatus may be constructed by inputting information supplied from a maker of the processing apparatuses 1215 and 1315. Further, it is desirable that the information is not fixed but can always be updated.

As described above, in the prior art, since only a specific length was evaluated as a measurement object, a high-level evaluation as shown in the embodiment of the present invention could not be performed. Further, since the exchange of information as described above has not been performed automatically, the process conditions are determined by a method in which a person in charge of processing determines a huge amount of data and feeds back the data to the processing apparatus by the person in charge of processing. Was adopted.
Therefore, it took a lot of time and did not lead to an improvement in productivity. According to the method described in the present embodiment, it is possible to achieve both high productivity and high-precision processing in a method for manufacturing a semiconductor device.

[0066]

As described above in detail, according to the structure of the present invention, in forming a fine semiconductor device, a scanning type charged particle application apparatus suitable for easily evaluating process conditions of a processing apparatus. It is possible to provide a semiconductor device manufacturing method using the same, which has a great effect on realizing a semiconductor device manufacturing method with high processing accuracy and increasing the productivity of the semiconductor device. Further, according to the configuration of the present invention, in the scanning charged particle application apparatus, in measuring the dimension of the processing pattern, the dimension in the two-dimensional direction on the screen is measured, and the desired pattern and the formed pattern are visually checked. , Quantitatively evaluate the difference between the two, collect the basic data of the adjustment of the process conditions, furthermore, the evaluation result of the substrate to be processed including the processing pattern is fed back to the processing process of the substrate to be processed, To provide a scanning type charged particle application apparatus which automates a manufacturing process, realizes high-precision processing, and contributes to improvement in productivity.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of pattern measurement by a conventional scanning charged particle microscope.

FIG. 2 is an explanatory diagram of an allowable error in the pattern measurement of FIG.

FIG. 3 is an explanatory diagram of a configuration and a display screen of a scanning electron microscope according to an embodiment of the present invention.

4 is a measurement flowchart using the scanning electron microscope of FIG.

FIG. 5 is an explanatory diagram of measurement by a scanning electron microscope according to another embodiment of the present invention.

FIG. 6 is an explanatory diagram of measurement by a scanning electron microscope according to still another embodiment of the present invention.

FIG. 7 is an explanatory diagram of measurement by a scanning electron microscope according to still another embodiment of the present invention.

FIG. 8 is an explanatory diagram of measurement by a scanning electron microscope according to still another embodiment of the present invention.

FIG. 9 is an explanatory diagram of measurement by a scanning electron microscope according to still another embodiment of the present invention.

FIG. 10 is an explanatory diagram of measurement by a scanning electron microscope according to still another embodiment of the present invention.

FIG. 11 is an explanatory diagram of measurement by a scanning electron microscope according to still another embodiment of the present invention.

FIG. 12 is an explanatory diagram of an Ethernet-connected scanning electron microscope according to still another embodiment of the present invention.

FIG. 13 is a diagram illustrating a method for manufacturing a semiconductor device using a scanning electron microscope according to still another embodiment of the present invention.

[Explanation of symbols]

101, 201 ... resist pattern 202, 502 ... allowable maximum range line 203, 503 ... allowable minimum range line 202, 501, 601, 1001 ... hole pattern image 301, 401, 1201 ... electron source 302, 1202, 1302 ... electron beam 303 , 1203, 1303 ... Lens system 304, 1204, 1304 ... Deflection system 305, 1205, 1305 ... Substrate to be processed 306, 1206, 1306 ... Stage system 307, 1207, 1307 ... Cassette 308, 1208, 1308 ... Detection system 309, 1209 1309 Signal processing system 310, 1210, 1310 Display system 311, 1211, 1311 Operation control system 312, 1212, 1312 Judgment unit 313, 1213, 1313 Input / output unit 314, 1214, 1314 Network 315, 8 1 Reference pattern image 316, 802 Observation pattern image 1215, 1315, 1317 Processing device 1216, 1316 Database part 602 Center of gravity 603 Radial 701 First pattern image 702 Second pattern image 803 Evaluation points 901, 1101... Predetermined pattern 1002... Defective pattern 1102, 1103, 1113, 1111, 1112,
1114, 1115: minute area 1120, 1211, 1122, 1123 ... intersection

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Jiro Yamamoto 1-280 Higashi Koigakubo, Kokubunji-shi, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Masayuki Hiranuma 5-2-1, Josuihoncho, Kodaira-shi, Tokyo Within the Semiconductor Division, Hitachi, Ltd. (72) Inventor Makoto Esumi, 882 Ma, Hitachinaka-shi, Ibaraki Pref. Inside the Instrumentation Division, Hitachi, Ltd. (72) Inventor Tadashi Otaka 882, Ma, Hitachinaka-shi, Ibaraki Stock Association Inside Hitachi Measuring Instruments Division (72) Inventor Hideo Todokoro 882-mo, Hitachinaka-shi, Ibaraki Prefecture Co., Ltd.Inside Hitachi Measuring Instruments Division (72) Inventor Takashi Iizumi 882-Momo, Hitachinaka-shi, Ibaraki Corporation. F-term (reference) 2F067 AA54 AA57 BB04 CC17 EE03 EE04 EE10 HH06 JJ05 KK04 KK08 LL00 LL14 RR35 SS13 4M106 AA01 BA02 BA03 CA39 DB05 DJ18 DJ21 DJ23 5F056 BA05 BA08 BB01 BC08 CA25 CB40

Claims (28)

[Claims] 1. A lens system for irradiating a focused charged particle beam to a real pattern on a substrate to be processed which has been processed according to a design pattern by a processing apparatus, and irradiating the substrate to be processed with the charged particle beam. A detection system that captures secondary electrons and / or reflected electrons generated from an actual pattern on a substrate to be processed, a signal processing system that converts the detection signal into a two-dimensional image signal, and an observation pattern that converts the two-dimensional image signal into an observation pattern A scanning charged particle beam application device comprising a display system for displaying as an image and a memory unit, wherein a display system on which the observation pattern image is displayed has an image of a determination condition of the actual pattern based on the observation pattern. A scanning type charged particle beam application device, comprising: means for displaying 2. A lens system for irradiating a focused charged particle beam onto an actual pattern on a substrate to be processed which has been processed according to a design pattern by a processing device, and a lens system for irradiating the charged substrate with the charged particle beam irradiation. A detection system for capturing secondary electrons and / or reflected electrons generated from an actual pattern, a signal processing system for converting the detection signal into a two-dimensional image signal, and a display for displaying the two-dimensional image signal as an observation pattern image A scanning type charged particle beam application device comprising a system and a memory unit, means for displaying the image of the judgment condition of the actual pattern on the same display screen of the observed pattern image, the processing device and the coating device. A database in which information on a processing board is stored and a network connecting the input / output unit, and information of the processing apparatus and the database from the input / output unit via the network. Receiving means for receiving an image of the determination condition for evaluating the observation pattern image, determination means for comparing the observation pattern image with the image of the determination condition, and the determination result from the input / output unit via the network A scanning charged particle beam application apparatus, comprising: a transmission unit for transmitting the data to the processing apparatus. 3. A scanning charged particle beam application apparatus according to claim 1, wherein a judgment parameter to be stored in a memory unit in advance is determined as an image of the judgment condition, and the judgment parameter is used. Scanning charged particle beam application equipment. 4. The scanning-type charged particle beam application apparatus according to claim 3, wherein at least one of a length, an area, and unevenness of the observation pattern image is used as the determination parameter. Type charged particle beam application equipment. 5. The scanning-type charged particle beam application apparatus according to claim 4, wherein a dimensional change value in a predetermined region in a predetermined direction of the observation pattern image is used as the unevenness of the observation pattern image. Charged particle beam application equipment. 6. The scanning charged particle beam application apparatus according to claim 4, wherein, when the observation pattern image is a hole pattern, the outer periphery of the hole pattern is determined from the center of gravity of the hole pattern. A scanning type charged particle beam application apparatus characterized by using irregular lengths of parts. 7. The scanning charged particle beam application apparatus according to claim 4, wherein, when the observation pattern image is a hole pattern, the hole pattern is determined from the center of gravity of the hole pattern. A scanning type charged particle beam application apparatus characterized by using irregular lengths in a peripheral portion. 8. The scanning charged particle beam application apparatus according to claim 4, wherein the means for determining the length of the observation pattern includes a minute area designation input means for designating a plurality of minute areas on the observation pattern image. In the plurality of minute regions, a first calculating means for obtaining a pattern edge position in a predetermined direction defined by the observation pattern image and a second calculating means for obtaining a distance between the edge positions from the calculation result are provided. A scanning type charged particle beam application apparatus characterized by the above-mentioned. 9. A scanning type charged particle beam application apparatus according to claim 8, wherein said minute area designation input means designates and inputs a minute area with a cursor on a display screen. 10. The scanning charged particle beam application apparatus according to claim 4, wherein the area of the observation pattern is a two-dimensional size of a region surrounded by an outer peripheral portion of the observation pattern image. Scanning type charged particle beam application equipment. 11. The scanning charged particle beam application apparatus according to claim 3, wherein when the observation pattern image is determined based on the determination parameter, an upper limit value and a lower limit value set for the determination parameter. A scanning type charged particle beam application device characterized by making a judgment based on: 12. The scanning charged particle beam application apparatus according to claim 3, wherein said judgment parameter can be selected by a pointing device. 13. A lens system for irradiating a focused charged particle beam to an actual pattern on a substrate to be processed which has been processed according to a design pattern by a processing apparatus, and irradiating the substrate to be processed with the charged particle beam. A detection system that captures secondary electrons and / or reflected electrons generated from an actual pattern on a substrate to be processed, a signal processing system that converts the detection signal into a two-dimensional image signal, and an observation pattern that converts the two-dimensional image signal into an observation pattern A display system for displaying as an image, and a scanning charged particle beam application device including a memory unit, wherein a display system on which the observation pattern image is displayed includes a reference pattern image of the actual pattern based on the observation pattern. A scanning type charged particle beam application apparatus, comprising: means for displaying a determination condition image. 14. A lens system for irradiating a focused charged particle beam to an actual pattern on a substrate to be processed which has been processed according to a design pattern by a processing apparatus, and a lens system for irradiating the charged substrate with the charged particle beam irradiation. A detection system for capturing secondary electrons and / or reflected electrons generated from an actual pattern, a signal processing system for converting the detection signal into a two-dimensional image signal, and a display for displaying the two-dimensional image signal as an observation pattern image A scanning type charged particle beam application device comprising a system and a memory unit, wherein a reference pattern image is displayed on the same display screen of the observation pattern image as an image of the judgment condition of the actual pattern based on the observation pattern. Means, a database unit storing information on the processing apparatus and the substrate to be processed, a network connecting the input / output unit, and a network from the input / output unit via the network. Receiving means for receiving information on the processing apparatus and a reference pattern image for evaluating the observation pattern image from the database unit; determining means for comparing the observation pattern image with the reference pattern image; A transmitting means for transmitting from the input / output unit to the processing apparatus via the network to the processing apparatus. 15. The scanning charged particle beam application apparatus according to claim 13, wherein a transfer fidelity is used as a determination parameter instead of the reference pattern image as the image of the determination condition. Is
A plurality of predetermined evaluation points are defined in advance on the outer peripheral portion of the reference pattern image, a closest distance between the evaluation point and the outer peripheral portion of the observation pattern image is obtained, and a sum of the closest distances of the plurality of evaluation points is obtained. And a ratio between the calculated value and a predetermined value is calculated. 16. The scanning charged particle beam application apparatus according to claim 15, wherein the transfer fidelity includes: an outer peripheral portion of the reference pattern image;
A scanning charged particle beam application apparatus, wherein a sum of areas of a closed region formed at an outer peripheral portion of the observation pattern image is obtained, and a ratio of the sum to a predetermined value is used. 17. The scanning-type charged particle beam application apparatus according to claim 16, wherein a display means for superimposing and displaying the reference pattern image on the observation pattern image as means for obtaining the total area of the closed area; Means for specifying a plurality of minute regions on the superimposed screen; a pattern edge position determined from the observation pattern image and a side determined from the reference pattern image within the plurality of designated minute regions Alternatively, a first calculating means for obtaining a difference from a position of a point corresponds to an area value surrounded by a pattern edge position of the observation pattern image determined by the calculation result and a position of a side or a point of the reference pattern image. A scanning type charged particle beam application apparatus, comprising: a second calculating means for obtaining a value. 18. The scanning charged particle beam application apparatus according to claim 13, wherein the reference pattern image is a processing shape predicted from the design pattern value and the processing method. Scanning charged particle beam application equipment. 19. The scanning charged particle beam application apparatus according to claim 13, wherein the reference pattern image is allowed for the actual pattern in a processing shape predicted from the design pattern value and the processing method. A scanning type charged particle beam application apparatus characterized in that it shows a large and small range. 20. The scanning-type charged particle beam application apparatus according to claim 2, wherein information stored in the database unit includes a C of the design pattern.
A scanning type charged particle beam application apparatus, comprising: a storage unit including one of AD data, a simulation result of the actual pattern formation, and a correlation table of a processing result and a processing result for changing a processing condition of the processing apparatus. . 21. The scanning type charged particle beam application apparatus according to claim 20, wherein the storage means includes at least a focus condition or an irradiation amount of an energy beam, a bake temperature and a time of a resist process, and a holding time as the process condition. Alternatively, a scanning type charged particle beam application apparatus characterized in that any one of proximity effect parameters in energy beam irradiation is stored. 22. The scanning charged particle beam application apparatus according to claim 1, wherein the processing device is an energy beam irradiation device that irradiates either an electromagnetic wave or a charged particle beam. Scanning charged particle beam application equipment. 23. The scanning-type charged particle beam application device according to claim 2, wherein the position determined to be defective is clearly displayed on a screen of a display system by the determination means. A scanning type charged particle beam application device, characterized in that: 24. In the scanning charged particle beam application apparatus according to any one of claims 3 to 12 or 15 to 22, when a plurality of observation pattern images are provided, the judgment parameter is set to the plurality of observation pattern images. A scanning type charged particle beam application apparatus using any one of a distance between each other, an area distribution of the plurality of observation pattern images, and a shape of the plurality of observation pattern images. 25. A lens system for irradiating a focused charged particle beam on a real pattern on a processed substrate processed according to a design pattern by a processing apparatus, and a detecting system for irradiating the processed substrate with the charged particle beam irradiation. Capturing secondary electrons and / or reflected electrons generated from the actual pattern above, converting the detection signal into a two-dimensional image signal by a signal processing system,
A microscopic method using a scanning type charged particle beam application device for displaying the two-dimensional image signal as an observation pattern image by a display system, wherein an image of a judgment condition is displayed on the same display screen of the observation pattern image, and the processing is performed. A database unit storing information on the apparatus and the substrate to be processed and the input / output unit are connected via a network, and the information on the processing apparatus and the observation pattern image from the database unit are transmitted from the input / output unit via the network. Receiving an image of a determination condition for evaluating the actual pattern based on the image, determining the observation pattern image based on the image of the determination condition, and transmitting the determination result from the input / output unit via the network to the processing apparatus. A microscopic method characterized by using a scanning charged particle beam application device characterized by transmitting to a scanning electron beam. 26. The microscopic method according to claim 25, wherein a reference pattern image is used as the image of the determination condition. 27. A semiconductor device manufacturing method wherein a desired pattern is processed on a semiconductor substrate by a plurality of processing devices, and inspected by a scanning charged particle beam application device according to any one of claims 1 to 24 to form a semiconductor device. A method of automatically receiving information for operating the processing apparatus from the input / output unit via a network, and a method of processing the actual pattern on the semiconductor substrate after processing by the processing apparatus. Observing with a particle microscope, displaying as an observed pattern image on the screen of the display system, and displaying an image of a determination condition based on the design pattern of the memory unit on the same screen as the observed pattern image, and Receiving, from the input / output unit, an image of a judgment condition for diagnosing the observation pattern image from a database unit storing information on the semiconductor substrate; A step of automatically transferring the determination result from the input / output unit to the processing apparatus via a network, and a step of operating the processing apparatus based on the determination result. And a step of changing conditions. 28. The method of manufacturing a semiconductor device according to claim 27, wherein the plurality of processing devices and the scanning charged particle beam application device are connected by a transport mechanism, and the semiconductor substrate is separated from the first processing device by the first processing device. Conveying to the inspection device composed of the scanning charged particle beam application device, and after the inspection by the inspection device is completed, automatically transporting from the inspection device composed of the scanning charged particle beam application device to the second processing device. A method for manufacturing a semiconductor device, comprising: