JP4124508B2 - 化合物半導体ウエハの表面保護方法 - Google Patents

化合物半導体ウエハの表面保護方法 Download PDF

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Publication number
JP4124508B2
JP4124508B2 JP06780198A JP6780198A JP4124508B2 JP 4124508 B2 JP4124508 B2 JP 4124508B2 JP 06780198 A JP06780198 A JP 06780198A JP 6780198 A JP6780198 A JP 6780198A JP 4124508 B2 JP4124508 B2 JP 4124508B2
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Prior art keywords
compound semiconductor
semiconductor wafer
oxide
evaporation source
compound
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Expired - Fee Related
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JP06780198A
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English (en)
Japanese (ja)
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JPH10289906A (ja
JPH10289906A5 (2
Inventor
マシュアス・パスラック
ジョナサン・ケイ・アブロクワ
ラビ・ドュルーパッド
コレイ・ディー・オーバーガード
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP06780198A 1997-03-04 1998-03-02 化合物半導体ウエハの表面保護方法 Expired - Fee Related JP4124508B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/812,950 US6030453A (en) 1997-03-04 1997-03-04 III-V epitaxial wafer production
US812950 1997-03-04

Publications (3)

Publication Number Publication Date
JPH10289906A JPH10289906A (ja) 1998-10-27
JPH10289906A5 JPH10289906A5 (2) 2008-04-24
JP4124508B2 true JP4124508B2 (ja) 2008-07-23

Family

ID=25211066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06780198A Expired - Fee Related JP4124508B2 (ja) 1997-03-04 1998-03-02 化合物半導体ウエハの表面保護方法

Country Status (3)

Country Link
US (1) US6030453A (2)
EP (1) EP0863542A3 (2)
JP (1) JP4124508B2 (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107039245A (zh) * 2017-04-20 2017-08-11 中国科学院微电子研究所 提高氧化镓材料导热性的方法

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US6670651B1 (en) 2000-05-04 2003-12-30 Osemi, Inc. Metal sulfide-oxide semiconductor transistor devices
US6445015B1 (en) 2000-05-04 2002-09-03 Osemi, Incorporated Metal sulfide semiconductor transistor devices
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US6451711B1 (en) * 2000-05-04 2002-09-17 Osemi, Incorporated Epitaxial wafer apparatus
US6989556B2 (en) * 2002-06-06 2006-01-24 Osemi, Inc. Metal oxide compound semiconductor integrated transistor devices with a gate insulator structure
NO322192B1 (no) * 2002-06-18 2006-08-28 Thin Film Electronics Asa Fremgangsmate til fremstilling av elektrodelag av ferroelektriske minneceller i en ferroelektrisk minneinnretning, samt ferroelektrisk minneinnretning
US7187045B2 (en) * 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
US6770536B2 (en) 2002-10-03 2004-08-03 Agere Systems Inc. Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate
WO2004074556A2 (ja) * 2003-02-24 2004-09-02 Waseda University β‐Ｇａ2Ｏ3系単結晶成長方法、薄膜単結晶の成長方法、Ｇａ2Ｏ3系発光素子およびその製造方法
US20070138506A1 (en) * 2003-11-17 2007-06-21 Braddock Walter D Nitride metal oxide semiconductor integrated transistor devices
WO2005061756A1 (en) * 2003-12-09 2005-07-07 Osemi, Inc. High temperature vacuum evaporation apparatus
JP2005235961A (ja) * 2004-02-18 2005-09-02 Univ Waseda Ｇａ２Ｏ３系単結晶の導電率制御方法
US7202182B2 (en) * 2004-06-30 2007-04-10 Freescale Semiconductor, Inc. Method of passivating oxide/compound semiconductor interface
US20080157073A1 (en) * 2006-12-29 2008-07-03 Walter David Braddock Integrated Transistor Devices
US8273649B2 (en) 2008-11-17 2012-09-25 International Business Machines Corporation Method to prevent surface decomposition of III-V compound semiconductors
US10475930B2 (en) 2016-08-17 2019-11-12 Samsung Electronics Co., Ltd. Method of forming crystalline oxides on III-V materials
US11462402B2 (en) 2020-10-21 2022-10-04 Cornell University Suboxide molecular-beam epitaxy and related structures

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US4592927A (en) * 1982-09-24 1986-06-03 At&T Bell Laboratories Growth of oxide thin films using solid oxygen sources
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4745082A (en) * 1986-06-12 1988-05-17 Ford Microelectronics, Inc. Method of making a self-aligned MESFET using a substitutional gate with side walls
US4859253A (en) * 1988-07-20 1989-08-22 International Business Machines Corporation Method for passivating a compound semiconductor surface and device having improved semiconductor-insulator interface
US5550089A (en) * 1994-03-23 1996-08-27 Lucent Technologies Inc. Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.
US5451548A (en) * 1994-03-23 1995-09-19 At&T Corp. Electron beam deposition of gallium oxide thin films using a single high purity crystal source
US5767388A (en) * 1995-04-26 1998-06-16 Siemens Aktiengesellschaft Methane sensor and method for operating a sensor
US5665658A (en) * 1996-03-21 1997-09-09 Motorola Method of forming a dielectric layer structure
US5597768A (en) * 1996-03-21 1997-01-28 Motorola, Inc. Method of forming a Ga2 O3 dielectric layer
US5693565A (en) * 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107039245A (zh) * 2017-04-20 2017-08-11 中国科学院微电子研究所 提高氧化镓材料导热性的方法
CN107039245B (zh) * 2017-04-20 2020-01-21 中国科学院微电子研究所 提高氧化镓材料导热性的方法

Also Published As

Publication number Publication date
EP0863542A3 (en) 2000-06-28
JPH10289906A (ja) 1998-10-27
EP0863542A2 (en) 1998-09-09
US6030453A (en) 2000-02-29

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