JP4114345B2 - Vacuum deposition system - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
In the present invention, a film-formation gas is jetted by a chemical vapor deposition method (CVD) onto a web-like substrate such as polyethylene terephthalate (PET), triacetylcellulose (TAC), and other resin roll film surfaces in a vacuum. The present invention relates to a vacuum film forming apparatus for forming a thin film thereon.
[0002]
[Prior art]
For example, as shown in FIG. 4, it has a winding shaft 1 having a winding means capable of winding at a constant tension such as a torque motor, and a constant back tension is applied by a torque control means such as a powder clutch. While having the unwinding shaft 2 that enables unwinding of the web-shaped synthetic resin film, the idle rollers 3 and 4 that restrict the running of the synthetic resin film 9 between these two shafts and the tension are detected. A film is formed on the surface of the tension rolls 7 and 8 and the synthetic resin film 9 provided with tension detectors 5 and 6 for appropriately feeding back to the winding shaft 1 or the unwinding shaft 2 by controlling the temperature of the film 9. A predetermined tension is applied from the unwinding shaft 2 by disposing the temperature control drum 10 and the film forming means including the electrode 11 and the plurality of film forming gas ejection pipes 17 and 18. The web-like synthetic resin film 9 to be discharged is formed on the surface of the synthetic resin film 9 on the temperature control drum 10 by the film-forming means, and then applied to the winding shaft 1 with a predetermined tension. The film 13 having a thin film formed on the surface can be obtained.
[0003]
However, the conventional technique as shown in FIG. 4 has the following problems.
Since the CVD method and the sputtering method have a low film formation rate, it is necessary to deposit a necessary film thickness by increasing the area. Therefore, when the electrode is enlarged, depending on the shape and width of the film, the enlargement itself is impossible, or even if the enlargement is possible, the film formation speed and film quality change greatly at the center and both ends of the electrode. There was a problem such as.
[0004]
The reason why the film formation rate is slow involves several factors. One of the reasons is that the density of plasma that can be generated is low. In order to improve this density, there are methods such as applying a large amount of power and reducing the substrate distance, but this tends to shift to abnormal discharge called arc discharge, and it is difficult to form a stable film or to the substrate. The damage of the film increased, causing deterioration of the film quality.
[0005]
Furthermore, there are many reports on electrodes using the holocathode effect, but these always require an anode for the cathode, which is greatly influenced by the distance and shape of each, making the phenomenon more complicated and the necessary effects. There was a problem that it was difficult to obtain.
[0006]
[Problems to be solved by the invention]
The present invention solves the problems of the prior art, and the problem is that in a vacuum film forming apparatus for forming a thin film on the surface of a web-like synthetic resin film by chemical vapor deposition (CVD), a large electrode is used. The present invention provides a vacuum film forming apparatus and a film forming method using the same, which can improve the high-speed stability of film formation without increasing the power and power consumption, and can further simplify the electrode. is there.
[0007]
[Means for Solving the Problems]
In order to achieve the above object in the present invention, first, in the invention of claim 1, a mechanism in which a web-shaped substrate travels in a vacuum film-forming chamber and a film-forming gas that jets a plasma-forming film-forming gas to the substrate running surface. A vacuum film forming apparatus comprising at least means for forming an internal space in which the film forming means converts the film forming gas into plasma, an electrode having the internal space, a permanent magnet attached to the electrode, and an equal installation on the electrode A hole for ejecting a plasma-forming film-forming gas from the internal space to the substrate running surface, an introducing means for introducing the film-forming gas into the internal space, and an electrode installed on the back surface of the web-shaped substrate; And providing a high-frequency power application mechanism capable of applying a high-frequency power between an electrode having the internal space and an electrode installed on the back surface of the web-like substrate. .
[0008]
According to the vacuum apparatus of the present invention, a stable thin film can be laminated at high speed without complicating the film forming means. Furthermore, the power supply to the film forming means can be suppressed to ½ or less compared to the conventional electrode, and wasteful power consumption can be suppressed.
[0009]
Further, it is easy to generate plasma by utilizing the E × B drift effect in the internal space, the density can be increased, and the plasma generation itself can be confined in the space inside the electrode.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
As in the conventional example, the vacuum film forming apparatus may be a device for unwinding and winding the web-like substrate in a vacuum environment like the film forming chamber. However, an external unwinding / winding mechanism is provided. It may be that which is introduced into or discharged from the vacuum apparatus.
[0011]
Further, although the mechanism is transported to the film forming chamber while being wound around the temperature control drum, it may have another transport form.
Furthermore, the partition between the film forming chamber and the other region is formed as close to the temperature control drum as it does not come into contact with the web-like substrate, but the size of the partition can be selected as appropriate.
Further, the web-like substrate may be made of any material as long as it has a long property such that it can be bent and wound.
[0012]
As the film forming gas, any material can be used as long as it can be attached to the web substrate by CVD. HMDSO (hexamethyldisiloxy acid), Ti (i-OC ₃ H ₇ ) ₄ (tetraisoproxytitanium) Etc. can be used.
The film forming means in the present invention requires at least an electrode having an internal space, and the material is an electrode material, and usually SUS (stainless steel) or the like is used.
[0013]
In addition to the hole and the internal space, the electrode is provided with an introduction tube that forms part of the means for introducing the film formation gas. For the purpose of efficient plasma conversion of the internal introduction gas and efficient discharge during film formation. In addition, the shape can be selected as appropriate. For example, the hole portion is formed toward the film forming portion.
[0014]
As an introduction means for introducing film formation gas into the internal space, it refers to a mechanism for releasing the film formation gas from the outside to the internal space. Since the inside is low in atmospheric pressure, simply connect with the outside, regulate the flow rate, and pipe But it is possible.
The flow rate adjustment is preferably finely adjustable because it is related to the film thickness.
[0015]
The high-frequency power application mechanism is a mechanism that applies high-frequency power between the back surface of the web substrate, for example, an electrode installed on a temperature control drum and the electrode of the present application. Here, the high frequency means 40 kHz to 54 MHz. The pressurizing power is a mechanism that can be adjusted, and the maximum power and the like vary depending on the size and material of the vacuum mechanism, the desired film thickness, and the like.
[0016]
In addition, as with the conventional example, it is possible to unwind a web-like synthetic resin film while applying a constant back tension by a winding means capable of winding at a constant tension such as a torque motor, and a torque control means such as a powder clutch. It may be provided with means such as unwinding means, a plurality of idle rollers, a tension detector, a tension roll, and a temperature control drum.
[0017]
【Example】
An example when the present invention is implemented is shown below.
Except for the film forming means 11 in FIG. 4 of the conventional example, the film forming means 11 is provided with a shower head electrode 19 instead of the film forming means 11 as shown in FIGS.
The size is 100 × 300 × 50 mm, and an internal space 20 of 80 × 270 × 2 mm is provided therein.
Furthermore, twelve holes 21 having a diameter of 3 mm that penetrate from the inner space 20 to the outside are provided uniformly to form a shower head.
[0018]
Further, as shown in FIG. 3, a permanent magnet is provided on the rear surface so that the N pole 22 is surrounded by the S pole 23.
In addition, it experimented after adjusting the distance of the temperature control drum 10 surface and the electrode 19 with 35 mm.
[0019]
A high frequency power with a frequency of 13.56 kHz and a power of 1.5 kW is applied between the electrode 19 and the electrode in the temperature control drum 10, and 100 sccm of HMSDO as a film forming gas is introduced into the internal space 20, and the material is PET (polyethylene terephthalate). The experiment was conducted by flowing a synthetic resin film 9 of a web-shaped substrate having a width of 300 mm at a line speed of 1 m / min.
[0020]
By drawing out the high-density plasma from the hole of the shower head, a chemical reaction occurred between the substrate and the electrode, and a thin film can be stacked.
The resulting thin film had a thickness of 20 nm and no arc discharge traces were generated.
In addition, the film quality of the thin film which can be laminated | stacked can also be changed by changing the hole position and size of a shower head.
[0021]
【The invention's effect】
Since this invention is the above structure, there exist the following effects.
That is, without complicating the film forming means, it is possible to generate a high density plasma with a very simple apparatus configuration and power saving, and to improve the film forming speed which has been a problem in the conventional CVD method.
[0022]
Therefore, the present invention is excellent as a vacuum film forming apparatus for forming a thin film on the surface of a substrate in a vacuum, particularly as a vacuum film forming apparatus for forming a thin film on the surface of a web-like synthetic resin film by chemical vapor deposition (CVD) or the like. Demonstrate practical effects.
[0023]
In particular, by using a permanent magnet in the lower part of the electrode, it is easy to generate plasma using the E × B drift effect, and it is possible to achieve higher density, and the generation of plasma itself can be confined in the space inside the electrode. For this reason, this discharge itself is a discharge close to induction discharge, and does not require an anode. This also has the effect of increasing the degree of freedom with respect to the device configuration.
[Brief description of the drawings]
FIG. 1 is a partial perspective view showing a schematic view of a film forming means of a vacuum winding apparatus according to the present invention.
FIG. 2 is a partial enlarged cross-sectional view showing an example of a film forming means of a vacuum winding apparatus according to the present invention.
FIG. 3 is a partially enlarged sectional view showing an example of a permanent magnet of a vacuum winding device according to the present invention.
FIG. 4 is a schematic explanatory view showing an overall view of a winding type vacuum film forming apparatus in the prior art.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Winding axis | shaft 2 Unwinding axis | shaft 3, 4 Idle roller 5, 6 Tension detector 7, 8 Tension roller 9, 12 Synthetic resin film 10 Temperature control drum 11 Electrode 13 Films 17 and 18 Deposition gas ejection pipe 19 Electrode 20 Internal space 21 Hole 22 N pole 23 S pole

Claims (1)

A vacuum film forming apparatus comprising at least a mechanism for moving a web-shaped substrate in a vacuum film forming chamber and film forming means for ejecting a plasma forming film gas onto the substrate running surface,
An inner space in which the film forming means converts the film forming gas into plasma, an electrode having the inner space, a permanent magnet attached to the electrode, and a plasma that is evenly installed on the electrode from the inner space to the substrate running surface. Holes for jetting the formed film forming gas, introduction means for introducing the film forming gas into the internal space, electrodes installed on the back surface of the web-shaped substrate, electrodes having the internal space, and the web-shaped substrate A vacuum film-forming apparatus comprising a high-frequency power application mechanism capable of applying high-frequency power to an electrode placed on the back surface of a material .

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