JP4112747B2

JP4112747B2 - Switching switching means

Info

Publication number: JP4112747B2
Application number: JP16430199A
Authority: JP
Inventors: 利康鈴木
Original assignee: 利康鈴木
Priority date: 1998-05-06
Filing date: 1999-05-06
Publication date: 2008-07-02
Anticipated expiration: 2019-05-06
Also published as: JP2000059187A

Description

【０００１】
【技術分野】
第１〜第８の各発明は「２つの可制御スイッチング手段の直列接続によって構成した、切換えスイッチ機能を持つ切換えスイッチング手段」においてそれら可制御スイッチング手段の同時オンを阻止したり、あるいは、同時オンによって両可制御スイッチング手段を流れる短絡電流（貫通電流）を低減したり、できる切換えスイッチング手段に関する。もちろん、それぞれの切換えスイッチング手段を３端子スイッチング手段あるいは２端子スイッチング手段などとして利用することもできる。従って、各発明は電力変換装置、論理回路、各種の駆動装置あるいはこれらを利用した各種装置もしくは各種回路などの分野に大いに役に立つ。
【０００２】
【背景技術】
従来の同時オン防止機能を持つ切換えスイッチング手段を図２と図３に２つ示す。図２の切換えスイッチング手段では両スイッチ端子ＳＷ４・ＳＷ６間には直流電源などが接続され、ダイオード９、１０が有る場合には両スイッチ端子ＳＷ４・ＳＷ６間に交流電源なども接続できる。その動作は次の通りである。万が一トランジスタ３、４が同時オンし掛かっても、両方を流れる短絡電流の一部がスイッチ端子ＳＷ４からトランジスタ３、ダイオード６、トランジスタ４のベース・エミッタ間静電容量およびトランジスタ４を経てスイッチ端子ＳＷ６へ流れるので、トランジスタ４のベース・エミッタ間静電容量の蓄積電荷は引き抜かれ、そのベース・エミッタ間は「ダイオード７、８の両順電圧の和からダイオード６の順電圧を引いた電圧」で逆バイアスされる。同時にその短絡電流の別の一部がスイッチ端子ＳＷ４からトランジスタ３、トランジスタ３のベース・エミッタ間静電容量、ダイオード５及びトランジスタ４を経てスイッチ端子ＳＷ６へ流れるので、トランジスタ３のベース・エミッタ間静電容量の蓄積電荷は引き抜かれ、そのベース・エミッタ間は「ダイオード７、８の両順電圧の和からダイオード５の順電圧を引いた電圧」で逆バイアスされる。その結果、両トランジスタ３、４は同時にオフ方向へ制御され、両トランジスタ３、４の完全な同時オンは完壁に阻止され、その短絡電流は自動的に制限されて小さくなったり、全く流れなかったりする。この様に図２の切換えスイッチング手段は同時オン防止機能を持つ。
【０００３】
一方、図３の切換えスイッチング手段でも両スイッチ端子ＳＷ１０・ＳＷ１２間に直流電源などが接続され、ダイオード９、１０が有る場合には両スイッチ端子ＳＷ１０・ＳＷ１２間に交流電源なども接続できる。その動作は次の通りである。万が一トランジスタ３、４が同時オンし掛かると、両方を流れる短絡電流の一部がスイッチ端子ＳＷ１０からトランジスタ３、「トランジスタ３のベース・エミッタ間静電容量もしくはダイオード６」、「トランジスタ４のベース・エミッタ間静電容量もしくはダイオード５」及びトランジスタ４を経てスイッチ端子ＳＷ１２へ流れるので、トランジスタ３、４の各ベース・エミッタ間静電容量の蓄積電荷が引き抜かれ、各ベース・エミッタ間はダイオード６、５の各順電圧で逆バイアスされる。その結果、両トランジスタ３、４は同時にオフ方向へ制御され、両トランジスタ３、４の完全な同時オンは完璧に阻止され、その短絡電流は自動的に制限されて小さくなったり、全く流れなかったりする。この様に図３の切換えスイッチング手段は同時オン防止機能を持つ。
【０００４】
尚、これら切換えスイッチング手段ではトランジスタ３の代わりに「その駆動信号入力用に対を成す制御端子と主端子（例：ＭＯＳ・ＦＥＴのゲート端子とソース端子など。）の間の逆バイアス電圧極性がマイナスで、自己ターン・オフ機能（＝自己消弧機能）を持つ、ノーマリィ・オフの可制御スイッチング手段」ならば、ＭＯＳ・ＦＥＴ、ＩＧＢＴ、ＧＴＢＴ（接地した溝形電極を持つバイポーラ型ＦＥＴ）、ＳＩＴ、ＢＳＩＴ（バイポーラ・モードのＳＩＴ）、ＧＴＯサイリスタ、ＳＩサイリスタ又は「複数の可制御スイッチング手段を組み合わせたスイッチング手段（参考例：特許第２７９６５６７号）」でも何でも使用できる。そして、トランジスタ４の代わりに「その駆動信号入力用に対を成す制御端子と主端子の間の逆バイアス電圧極性がプラスで、自己ターン・オフ機能を持つ、ノーマリィ・オフの可制御スイッチング手段」なら前述と同様何でも使用できる。また、ダイオード７、８の各順電圧に対してダイオード５、６の各順電圧が大きい場合、前述した同時オン防止作用が働かないことに注意する必要がある。
【０００５】
しかしながら、図２、図３に示す従来の各切換えスイッチング手段には『同時オン防止用の駆動逆バイアス電圧の大きさが小さい』という第１の問題点が有る。（第１の問題点）
例えば、トランジスタ３、４それぞれの代わりに可制御スイッチング手段としてＧＴＯサイリスタで電流容量の大きいプラス・ゲート型とマイナス・ゲート型を１つずつ使用する場合、同時オン防止機能を持たせるには大きなゲート逆バイアス電圧が必要である。また、大きな駆動逆バイアス電圧を供給できれば、トランジスタ３、４それぞれの代わりにノーマリィ・オンの可制御スイッチング手段も１つずつ使用することができる。さらに、トランジスタ３、４の様にノーマリィ・オフの可制御スイッチング手段を使う場合、駆動逆バイアス電圧を大きくすることによって同時オン防止機能を強化することができる。
【０００６】
ところが、図２の切換えスイッチング手段だとトランジスタ３、４それぞれに供給できる同時オン防止用のベース逆バイアス電圧は「ダイオード７、８の両順電圧の和からダイオード５、６の各順電圧を引いた各大きさ」にしかできない。仮にダイオード７、８それぞれに順電圧の大きいものを使用し、ダイオード５、６それぞれに順電圧の小さいものを使用すれば、その第１の問題点は解決するし、ノーマリィ・オンの可制御スイッチング手段の使用も可能になって来る。その一方、ダイオード７、８それぞれによる電圧降下が大きく、ダイオード７、８の各電圧降下による電圧損失を補うために電圧の大きい電源などを使用する必要が有ったり、エネルギー損失が大きくなったりしてしまう。
【０００７】
また、図３の切換えスイッチング手段ではトランジスタ３、４に供給できる同時オン防止用の各ベース逆バイアス電圧はダイオード６、５の各順電圧に依存する。仮にダイオード６、５それぞれに順電圧の大きいものを使用すれば、同時オン状態時にトランジスタ３、４を流れる短絡電流はダイオード６、５を流れず、ダイオード７、８にしか流れなくなるため、ダイオード６、５それぞれに電圧降下は生じず、先程述べた同時オン防止作用は働かなくなる。
【０００８】
それから、図２、図３に示す従来の各切換えスイッチング手段には『同時オン防止のためにオン駆動を阻止するのに利用できる短絡電流の割合が低い』という第２の問題点が有る。（第２の問題点）
図２、図３の各切換えスイッチング手段では同時オン状態時に短絡電流をトランジスタ３、４の各ベース側に導き、オン駆動される方のベース順バイアス電流をその短絡電流中に吸収して、オン駆動される方のベースに流れる順バイアス電流の量を抑えている。その結果、全体の短絡電流量が小さくなり、同時オン防止作用が強く働く。しかし、利用できる短絡電流の割合が低いと、それを補うために全体の短絡電流量は多くなり、同時オン防止作用は弱くなってしまう。
【０００９】
具体的に説明する。いま図２の切換えスイッチング手段においてトランジスタ４のターン・オフが遅れ、トランジスタ３のエミッタ・ベース間に例えば直流電源と抵抗の直列回路によってベース順バイアス電流が供給されて同時オンし掛かる場合を考える。その短絡電流の一部はスイッチ端子ＳＷ４からトランジスタ３、ダイオード７、８及びトランジスタ４を経てスイッチ端子ＳＷ６へ流れるが、その短絡電流の別の一部はスイッチ端子ＳＷ４からトランジスタ３、上述した「トランジスタ３のエミッタ・ベース間に接続される直流電源と抵抗の直列回路」、ダイオード５及びトランジスタ４を経てスイッチ端子ＳＷ６へ流れる。その短絡電流のまた別の一部はスイッチ端子ＳＷ４からダイオード６等を経てスイッチ端子ＳＷ６へ流れる。従って、その「直流電源と抵抗の直列回路」によって供給されるベース順バイアス電流は、全てではないが、その短絡電流の一部として吸収されていることが分かる。ダイオード７、８の方を流れる短絡電流の割合が高い程、『同時オン防止のためにオン駆動を阻止するのに利用できる短絡電流の割合は低く』なるが、その結果、その直列回路によって供給されるベース順バイアス電流の量は多くなり、全体の短絡電流量も多くなり、同時オン防止作用は弱くなる。この事は図３の切換えスイッチング手段でも同様である。
【００１０】
そこで、第１発明は『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできて、しかも、同時オン防止のためにオン駆動を阻止するのに利用できる短絡電流の割合を多くできる』切換えスイッチング手段を提供することを目的としている。（第１発明の目的）
【００１１】
第２発明は『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできる』切換えスイッチング手段を提供することを目的としている。（第２発明の目的）
【００１２】
第３発明は『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできて、同時オン防止のためにオン駆動を阻止するのに利用できる短絡電流の割合を多くできる』切換えスイッチング手段を提供することを目的としている。（第３発明の目的）
【００１３】
第４発明は『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできる』切換えスイッチング手段を提供することを目的としている。（第４発明の目的）
【００１４】
第５発明は『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできて、しかも、同時オン防止のためにオン駆動を阻止するのに利用できる短絡電流の割合を多くできる』切換えスイッチング手段を提供することを目的としている。（第５発明の目的）
【００１５】
第６発明は『同時オン防止のためにオン駆動を阻止するのに利用できる短絡電流の割合を多くできる』切換えスイッチング手段を提供することを目的としている。（第６発明の目的）
【００１６】
第７発明は『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできる』切換えスイッチング手段を提供することを目的としている。（第７発明の目的）
【００１７】
第８発明は『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできる』切換えスイッチング手段を提供することを目的としている。（第８発明の目的）
【００１８】
【第１発明の開示】
第１発明は請求項１記載の切換えスイッチング手段であって、「前記第２の可制御スイッチング手段に大きな駆動逆バイアス電圧を供給し、短絡電流を前記第１、第２の非可制御スイッチング手段よりも前記第３の非可制御スイッチング手段の方へ流れ易くする前記第１の直流電源手段」を設け、「前記第１の可制御スイッチング手段に大きな駆動逆バイアス電圧を供給し、短絡電流を前記第１、第２の非可制御スイッチング手段よりも前記第４の非可制御スイッチング手段の方へ流れ易くする前記第２の直流電源手段」を設けたことを特徴としている。
【００１９】
このことによって、万が一、前記第１、第２の可制御スイッチング手段が同時オンし掛かると、先ず短絡電流が前記第１の可制御スイッチング手段から前記第３の非可制御スイッチング手段、前記第１の直流電源手段、制御端子ｃｔ２・主端子ｍｔ２間静電容量および前記第２の可制御スイッチング手段へ流れて、制御端子ｃｔ２・主端子ｍｔ２間静電容量を逆バイアス方向に充電し、前記第２の可制御スイッチング手段をオフ方向へ制御する。同時に短絡電流が前記第１の可制御スイッチング手段から制御端子ｃｔ１・主端子ｍｔ１間静電容量前記第４の非可制御スイッチング手段、前記第２の直流電源手段および前記第２の可制御スイッチング手段へ流れて、制御端子ｃｔ１・主端子ｍｔ１間静電容量を逆バイアス方向に充電し、前記第１の可制御スイッチング手段をオフ方向へ制御する。
【００２０】
その結果、各駆動逆バイアス電圧の大きさは従来より前記第１、第２の直流電源手段の各電圧分大きくなり、『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできる』という第１の効果が第１発明に有る。（第１発明の第１の効果）
【００２１】
また、短絡電流は前記第１、第２の非可制御スイッチング手段よりも「前記第３の非可制御スイッチング手段と前記第１の直流電源手段の直列回路」の方や「前記第４の非可制御スイッチング手段と前記第２の直流電源手段の直列回路」の方が流れ易くなるので、『同時オン防止のためにオン駆動を阻止するのに利用できる短絡電流の割合を多くできる』という第２の効果が第１発明に有る。
（第１発明の第２の効果）
【００２２】
第１発明が請求項２記載の切換えスイッチング手段に対応する場合、前記第１、第２の直流電源手段の片方しか無いので、駆動逆バイアス電圧の大きさを大きくできるのは前記第１、第２の可制御スイッチング手段の片方だけであり、利用できる短絡電流の割合を多くできるのも片方だけである。
【００２３】
【第２発明の開示】
第２発明は請求項３記載の切換えスイッチング手段であって、「前記第１の可制御スイッチング手段に大きな駆動逆バイアス電圧を供給する前記第１の直流電源手段」を設け、「前記第２の可制御スイッチング手段に大きな駆動逆バイアス電圧を供給する前記第２の直流電源手段」を設けたことを特徴としている。
【００２４】
このことによって、万が一、前記第１、第２の可制御スイッチング手段が同時オンし掛かると、短絡電流の一部が前記第１の可制御スイッチング手段から前記第３、第４の非可制御スイッチング手段および前記第２の可制御スイッチング手段へ流れるので、前記第３、第４の非可制御スイッチング手段はそれぞれ逆方向電圧に対して間接的にオンとなる。このため、前記第１の直流電源手段が前記第３の非可制御スイッチング手段を介して制御端子ｃｔ１・主端子ｍｔ１間を逆バイアスして前記第１の可制御スイッチング手段をオフ方向へ制御し、同時に前記第２の直流電源手段が前記第４の非可制御スイッチング手段を介して制御端子ｃｔ２・主端子ｍｔ２間を逆バイアスして前記第２の可制御スイッチング手段をオフ方向へ制御する。その結果、各駆動逆バイアス電圧の大きさは従来より前記第１、第２の直流電源手段の各電圧分大きくなり、『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできる』という効果が第２発明に有る。（第２発明の効果）
【００２５】
第２発明が請求項４記載の切換えスイッチング手段に対応する場合、前記第１、第２の直流電源手段の片方しか無いので、駆動逆バイアス電圧の大きさを大きくできるのは前記第１、第２の可制御スイッチング手段の片方だけである。
【００２６】
【第３発明の開示】
第３発明は請求項５記載の切換えスイッチング手段であって、「前記第１、第２の可制御スイッチング手段それぞれに大きな駆動逆バイアス電圧を供給し、短絡電流を前記第１、第２の非可制御スイッチング手段よりも制御端子ｃｔ１・主端子ｍｔ１間静電容量と制御端子ｃｔ２・主端子ｍｔ２間静電容量の方へ流れ易くする前記第１、第２の直流電源手段」を設けたことを特徴としている。
【００２７】
このことによって、万が一、前記第１、第２の可制御スイッチング手段が同時オンし掛かると、短絡電流が前記第１の可制御スイッチング手段から制御端子ｃｔ１・主端子ｍｔ１間静電容量、前記第１、第２の直流電源手段、制御端子ｃｔ２・主端子ｍｔ２間静電容量および前記第２の可制御スイッチング手段へ流れて、制御端子ｃｔ１・主端子ｍｔ１間と制御端子ｃｔ２・主端子ｍｔ２間を同時に逆バイアス方向に充電し、前記第１、第２の可制御スイッチング手段を同時にオフ方向へ制御する。
【００２８】
その結果、各駆動逆バイアス電圧の大きさは従来より前記第１、第２の直流電源手段の各電圧分大きくなり、『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできる』という第１の効果が第３発明に有る。（第３発明の第１の効果）
【００２９】
また、短絡電流は前記第１、第２の非可制御スイッチング手段よりも前記第１、第２の直流電源手段の直列回路の方が流れ易くなるので、『同時オン防止のためにオン駆動を阻止するのに利用できる短絡電流の割合を多くできる』という第２の効果が第３発明に有る。（第３発明の第２の効果）
【００３０】
第３発明が請求項６記載の切換えスイッチング手段に対応する場合、前記第１、第２の直流電源手段の直列回路は１つにまとめられた直流電源手段となる。
【００３１】
【第４発明の開示】
第４発明は請求項７記載の切換えスイッチング手段であって、「前記第１，第２の可制御スイッチング手段それぞれに大きな駆動逆バイアス電圧を供給する前記第１、第２の直流電源手段の直列回路」を設けたことを特徴としている。
【００３２】
このことによって、万が一、前記第１、第２の可制御スイッチング手段が同時オンし掛かると、短絡電流の一部が前記第１の可制御スイッチング手段から制御端子ｃｔ１・主端子ｍｔ１間静電容量、前記第１、第２の直流電源手段、制御端子ｃｔ２・主端子ｍｔ２間静電容量および前記第２の可制御スイッチング手段へ流れるので、前記第１、第２の直流電源手段の直列回路は制御端子ｃｔ１・主端子ｍｔ１間静電容量と制御端子ｃｔ２・主端子ｍｔ２間静電容量を同時に逆バイアスして前記第１、第２の可制御スイッチング手段を同時にオフ方向へ制御する。その結果、各駆動逆バイアス電圧の大きさは従来より前記第１、第２の直流電源手段の各電圧分大きくなり、『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできる』という効果が第４発明に有る。（第４発明の効果）
【００３３】
第４発明が請求項８記載の切換えスイッチング手段に対応する場合、前記第１、第２の直流電源手段の直列回路は１つにまとめられた直流電源手段となる。
【００３４】
【第５発明の開示】
第５発明は請求項９記載の切換えスイッチング手段であって、「前記第１の可制御スイッチング手段に大きな駆動逆バイアス電圧を供給する前記第１の直流電源手段」、「短絡電流を前記第１、第２の非可制御スイッチング手段よりも前記第３、第４の非可制御スイッチング手段の方へ流れ易くする前記第２、第３の直流電源手段」および「前記第２の可制御スイッチング手段に大きな駆動逆バイアス電圧を供給前記第４の直流電源手段」を設けたことを特徴としている。
【００３５】
このことによって、万が一、前記第１、第２の可制御スイッチング手段が同時オンし掛かると、短絡電流が前記第１の可制御スイッチング手段から前記第３の非可制御スイッチング手段、前記第２、第３の直流電源手段、前記第４の非可制御スイッチング手段および前記第２の可制御スイッチング手段へ流れるので、前記第３、第４の非可制御スイッチング手段はそれぞれ逆方向電圧に対して間接的にオンとなる。このため、前記第１の直流電源手段が前記第３の非可制御スイッチング手段を介して制御端子ｃｔ１・主端子ｍｔ１間を逆バイアスして前記第１の可制御スイッチング手段をオフ方向へ制御し、同時に前記第４の直流電源手段が前記第４の非可制御スイッチング手段を介して制御端子ｃｔ２・主端子ｍｔ２間を逆バイアスして前記第２の可制御スイッチング手段をオフ方向へ制御する。
【００３６】
その結果、各駆動逆バイアス電圧の大きさは従来より前記第１、第２の直流電源手段の各電圧分大きくなり、『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできる』という第１の効果が第５発明に有る。（第５発明の第１の効果）
【００３７】
また、短絡電流は前記第１、第２の非可制御スイッチング手段よりも「前記第３の非可制御スイッチング手段、前記第２、第３の直流電源手段および前記第４の非可制御スイッチング手段の直列回路」の方が流れ易くなるので、『同時オン防止のためにオン駆動を阻止するのに利用できる短絡電流の割合を多くできる』という第２の効果が第５発明に有る。（第５発明の第２の効果）
【００３８】
第５発明が請求項１０記載の切換えスイッチング手段に対応する場合、前記第１、第２の直流電源手段の直列回路は１つにまとめられた直流電源手段となる。
【００３９】
第５発明が請求項１１又は１２記載の切換えスイッチング手段に対応する場合、前記第１、第２の直流電源手段の片方もしくは両方が無いので、駆動逆バイアス電圧の大きさを大きくできるのは前記第１、第２の可制御スイッチング手段の片方だけ又はどちらも大きくできない。
【００４０】
【第６発明の開示】
第６発明は請求項１３記載の切換えスイッチング手段であって、「短絡電流を前記第１、第２の非可制御スイッチング手段よりも前記第３、第４の非可制御スイッチング手段の方へ流れ易くする前記第１、第２の直流電源手段」を設けたことを特徴としている。
【００４１】
このことによって、万が一、前記第１、第２の可制御スイッチング手段が同時オンし掛かると、短絡電流が前記第１の可制御スイッチング手段から前記第３の非可制御スイッチング手段、前記第１、第２の直流電源手段、前記第４の非可制御スイッチング手段および前記第２の可制御スイッチング手段へ流れて、前記第３、第４の非可制御スイッチング手段それぞれに電圧降下（順電圧）を生じる。このため、前記第３の非可制御スイッチング手段はその順電圧で制御端子ｃｔ１・主端子ｍｔ１間を逆バイアスして前記第１の可制御スイッチング手段をオフ方向へ制御し、同時に前記第４の非可制御スイッチング手段はその順電圧で制御端子ｃｔ２・主端子ｍｔ２間を逆バイアスして前記第２の可制御スイッチング手段をオフ方向へ制御する。その結果、短絡電流は前記第１、第２の非可制御スイッチング手段よりも前記第１、第２の直流電源手段の直列回路の方が流れ易くなるので、『同時オン防止のためにオン駆動を阻止するのに利用できる短絡電流の割合を多くできる』という効果が第６発明に有る。（第６発明の効果）
【００４２】
第６発明が請求項１４記載の切換えスイッチング手段に対応する場合、前記第１、第２の直流電源手段の直列回路は１つにまとめられた直流電源手段となる。
【００４３】
【第７発明の開示】
第７発明は請求項１５記載の切換えスイッチング手段であって、「制御端子ｃｔ１ａ・主端子ｍｔ１ａ間に大きな駆動逆バイアス電圧を供給する前記第１の直流電源手段」および「制御端子ｃｔ２ａ・主端子ｍｔ２ａ間に大きな駆動逆バイアス電圧を供給する前記第２の直流電源手段」を設けたことを特徴としている。
【００４４】
このことによって、前記可制御スイッチング手段がオンのとき前記オン・オフ・スイッチング手段がターン・オンすると、前記第３の直流電源手段から前記第２の非可制御スイッチング手段、前記可制御スイッチング手段、前記第１の非可制御スイッチング手段および前記オン・オフ・スイッチング手段を経て短絡電流が流れるので、前記第１、第２の非可制御スイッチング手段はそれぞれ逆方向電圧に対して間接的にオンとなる。このため、前記第１の直流電源手段が前記第１の非可制御スイッチング手段を介して制御端子ｃｔ１ａ・主端子ｍｔ１ａ間を逆バイアスし、同時に前記第２の直流電源手段が前記第２の非可制御スイッチング手段を介して制御端子ｃｔ１ｂ・主端子ｍｔ１ｂ間を逆バイアスして前記可制御スイッチング手段をオフ方向へ制御するので、前記可制御スイッチング手段はターン・オフする。その結果、各駆動逆バイアス電圧の大きさは従来より前記第１、第２の直流電源手段の各電圧分大きくなり、『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできる』という効果が第７発明に有る。（第７発明の効果）
【００４５】
第７発明が請求項１６記載の切換えスイッチング手段に対応する場合、前記第１、第２の直流電源手段の片方しか無いので、駆動逆バイアス電圧の大きさを大きくできるのは制御端子ｃｔ１ａ・主端子ｍｔ１ａ間か制御端子ｃｔ１ｂ・主端子ｍｔ１ｂ間の片方だけである。
【００４６】
【第８発明の開示】
第８発明は請求項１７記載の切換えスイッチング手段であって、「制御端子ｃｔ１・主端子ｍｔ１ａ間に大きな駆動逆バイアス電圧を供給する前記第１の直流電源手段」及び「制御端子ｃｔ２・主端子ｍｔ２ａ間に大きな駆動逆バイアス電圧を供給する前記第２の直流電源手段」を設け、主端子ｍｔ１ａ・主端子ｍｔ２ａ間にこのスイッチング手段の負荷を接続して使用することを特徴としている。
【００４７】
このことによって、前記第２の可制御スイッチング手段がオンのとき前記第１の可制御スイッチング手段がターン・オンすると、前記第４の直流電源手段から前記第１の可制御スイッチング手段、前述した負荷および前記第２の非可制御スイッチング手段を経て負荷電流が流れるので、前記第２の非可制御スイッチング手段はその逆方向電圧に対して間接的にオンとなる。このため、前記第２の直流電源手段が前記第２の非可制御スイッチング手段を介して制御端子ｃｔ２・主端子ｍｔ２ａ間を逆バイアスして前記第２の可制御スイッチング手段をオフ方向へ制御するので、前記第２の可制御スイッチング手段はターン・オフする。
【００４８】
一方、前記第１の可制御スイッチング手段がオンのとき前記第２の可制御スイッチング手段がターン・オンすると、前記第３の直流電源手段から前記第２の可制御スイッチング手段、前述した負荷および前記第１の非可制御スイッチング手段を経て負荷電流が流れるので、前記第１の非可制御スイッチング手段はその逆方向電圧に対して間接的にオンとなる。このため、前記第１の直流電源手段が前記第１の非可制御スイッチング手段を介して制御端子ｃｔ１・主端子ｍｔ１ａ間を逆バイアスして前記第１の可制御スイッチング手段をオフ方向へ制御するので、前記第１の可制御スイッチング手段はターン・オフする。
【００４９】
その結果、各駆動逆バイアス電圧の大きさは従来より前記第１、第２の直流電源手段の各電圧分大きくなり、『電圧損失やエネルギー損失を増やさずに同時オン防止用の駆動逆バイアス電圧の大きさを大きくできる』という効果が第８発明に有る。（第８発明の効果）
尚、この切換えスイッチング手段によって前記負荷には前記第４の直流電源手段の電圧が供給されたり、それと逆向きに前記第３の直流電源手段の電圧が供給されたりしてプラス、マイナスの電圧の切換えが行われる。
【００５０】
第８発明が請求項１８記載の切換えスイッチング手段に対応する場合、前記第４の直流電源手段しか無いので、前記第２の可制御スイッチング手段がオンのとき前記負荷の両端は前記第１の非可制御スイッチング手段と前記第２の可制御スイッチング手段の直列回路によって短絡される。従って、この切換えスイッチング手段によって前記負荷には前記第４の直流電源手段の電圧が供給されたり、電圧ゼロが供給されたりして電圧の大きさの切換えが行われる。
【００５１】
【各発明を実施するための最良の形態】
各発明を詳細に説明するために以下添付図面に従ってこれを説明する。図１に示す第１発明の実施例では次の通りそれぞれが前述した各構成要素に相当する。ａ）トランジスタ３、４が前述した第１、第２の可制御スイッチング手段に。
ｂ）直流電源１、２が前述した第１、第２の直流電源手段に。
ｃ）ダイオード７、８、６、５が前述した第１〜第４の非可制御スイッチング手段に。
ｄ）トランジスタ３のベース端子とエミッタ端子が前述した制御端子ｃｔ１と主端子ｍｔ１に。
ｅ）トランジスタ４のベース端子とエミッタ端子が前述した制御端子ｃｔ２と主端子ｍｔ２に。
【００５２】
両スイッチ端子ＳＷ１・ＳＷ３間には直流電源などが接続され、ダイオード９、１０が有る場合には両スイッチ端子ＳＷ１・ＳＷ３間に交流電源なども接続できる。その回路動作は次の通りである。万が一、トランジスタ３、４が同時オンし掛かっても、両方を流れる短絡電流がダイオード７、８にも流れてこれらに電圧降下（両順電圧の和）を生じるので、両順電圧と直流電源１の相が逆バイアス電圧となって、ダイオード６を介してトランジスタ４のベース・エミッタ間に印加され、トランジスタ４はオフ方向へ制御される。同時に、両順電圧と直流電源２の和が逆バイアス電圧となって、ダイオード５を介してトランジスタ３のベース・エミッタ間に印加され、トランジスタ３はオフ方向へ制御される。
【００５３】
あるいは、「スイッチ端子ＳＷ１からトランジスタ３のコレクタ・エミッタ間、直流電源１、ダイオード６、トランジスタ４のベース・エミッタ間とエミッタ・コレクタ間を経てスイッチ端子ＳＷ３へ流れる短絡電流」がトランジスタ４のベース・エミッタ間を逆バイアスしてトランジスタ４をオフ方向へ制御する。同時に「スイッチ端子ＳＷ１からトランジスタ３のコレクタ・エミッタ間とエミッタ・ベース間、ダイオード５、直流電源２、トランジスタ４のエミッタ・コレクタ間を経てスイッチ端子ＳＷ３へ流れる短絡電流」がトランジスタ３のエミッタ・ベース間を逆バイアスしてトランジスタ３をオフ方向へ制御する。その結果、両トランジスタ３、４の完全な同時オンは完璧に阻止され、そして、その短絡電流は自動的に制限され、小さくなる。この様に図１の切換えスイッチング手段は同時オン防止機能を持ち、各前記逆バイアス電圧の大きさは従来より直流電源１、２の各電圧ぶん大きくなる。この事は第１発明全部について言える。
【００５４】
尚、トランジスタ３の代わりに「その駆動信号入力用に対を成す制御端子と主端子（例：ＭＯＳ・ＦＥＴのゲート端子とソース端子など。）の間の逆バイアス電圧極性がマイナスで、自己ターン・オフ機能を持つ可制御スイッチング手段」ならばノーマリィ・オフ、ノーマリィ・オンに関係無く、例えば、接合型ＦＥＴ、ＭＯＳ・ＦＥＴ、ＩＧＢＴ、ＧＴＢＴ（接地した溝形電極を持つバイポーラ型ＦＥＴ）、ＳＩＴ、ＢＳＩＴ（バイポーラ・モードのＳＩＴ）、ＧＴＯサイリスタ、ＳＩサイリスタ、「Ｐ、Ｎチャネルの接合型ＦＥＴ又はＧＴＢＴ又はＳＩＴ又はＢＳＩＴ２つ（異種類同士でも良い。）の一方のゲートと他方のドレイン、一方のドレインと他方のゲートそれぞれを接続したサイリスタ」あるいは「ＰＮＰと（Ｎチャネルの接合型ＦＥＴ、ＧＴＢＴ、ＳＩＴ、ＢＳＩＴのどれか１つ）の２つで、又は、ＮＰＮと（Ｐチャネルの接合型ＦＥＴ、ＧＴＢＴ、ＳＩＴ、ＢＳＩＴのどれか１つ）の２つで、そのベースとそのドレイン、そのコレクタとそのゲートそれぞれを接続したサイリスタ」など何でも使用できる。
【００５５】
そして、トランジスタ４の代わりに「その駆動信号入力用に対を成す制御端子と主端子の間の逆バイアス電圧極性がプラスで、自己ターン・オフ機能を持つ可制御スイッチング手段」ならばノーマリィ・オフ、ノーマリィ・オンに関係無く、上述と同様に何でも使用できる。この事は後述する他の各実施例や他の各発明の各実施例についても言える。この様に各構成要素の置換えによって各実施例から新しい実施例がいくつも派生する。（派生実施例）
【００５６】
図４、図５各図に示す第１発明の各実施例は請求項２記載の切換えスイッチング手段に対応する。これらの様に一方のトランジスタの逆バイアス電圧だけを大きくするとその一方だけでもオフ駆動し易くなるから、同時オン防止作用は従来より強くなる。
【００５７】
図６に示す第１発明の実施例の様にダイオード６と直流電源１の接続位置を入れ換えても良い。あるいは、ダイオード５と直流電源２の接続位置を入れ換えても良い。ダイオード９、１０が有る図６の実施例２つをスイッチ端子ＳＷ７、ＳＷ９のところで逆並列接続し、スイッチ端子ＳＷ８同士を接続すれば双方向性の切換えスイッチング手段を構成できる。この事は他の各実施例や他の各発明の各実施例についても同様である。
【００５８】
図７〜図１２各図に示す第１発明の各実施例は図６の実施例を利用した各種の論理回路である。各図中Ｖ１〜Ｖ４は電位の高さを示す符号で、Ｖ１からＶ４へ行くに従って電位は高くなるが、「Ｖ１＝Ｖ２又はＶ３＝Ｖ４」の場合も有るし、「Ｖ１がＶ２より高く、Ｖ３がＶ４より高い」場合も有る。各実施例においてＶ４の電源線とＶ１の電源線それぞれにダイオードが１つずつ接続されているが、ＮＰＮ等もしくはＰＮＰ等が逆バイアス電圧供給用の各直流電源を短絡しない様にするためにこれらは有る。
【００５９】
図１３〜図１５各図に示す第１発明の切換えスイッチング手段の実施例では各コンデンサ等が絶縁直流電源（図１の直流電源１、２）の役割を果たす。
【００６０】
「図１６、１７両図」、「図１６、１８両図」それぞれに第１発明の切換えスイッチング手段を用いた直列インバータ回路を１つずつ示す。「図１６、１９両図」に第１発明の切換えスイッチング手段を用いた螢光灯点灯回路を示す。「図２０、１７両図」、「図２０、１８両図」それぞれに第１発明の切換えスイッチング手段を用いた直列インバータ回路を示す。「図２０、１９両図」に第１発明の切換えスイッチング手段を用いた螢光灯点灯回路を示す。各図中３８は負荷、３９は螢光灯で、符号ｔ２０〜ｔ２３に関して同じ符号を付した導線同士はそれぞれ接続状態にある。逆並列接続されたダイオード５４、５５を流れる電流の方向に応じて各トランジスタのオン、オフが制御される。
【００６１】
各回路では図６の実施例を利用しているが、図６の切換えスイッチング手段の代わりに後述する図２１〜図２４、図３９〜図４０、図５３〜図５８、図６５〜図６６の各切換えスイッチング手段を利用した直列インバータ回路あるいは螢光灯点灯回路も同様に可能である。この場合も前述通りダイオード７、８が無い各回路が可能である。尚、図１８の回路部ではコレクタ接地のＮＰＮはベース接地のＰＮＰの出力電圧波形を改善するために接続されており、その出力電圧波形の立上りと立下りを鋭くするが、図１９の回路部でも同様にコレクタ接地のＮＰＮを追加接続して波形改善しても良い。図１９の回路部に等価サイリスタとツェナー・ダイオードを接続したＳＵＳ（シリコン・ユニラテラル・スイッチ、負性抵抗素子。）と同様なものが有るが、これは起動手段である。電源オンでｔ２０とｔ２２を付した両電源線間の電圧が所定値に達すると、その等価サイリスタがトリガーされてターン・オンし、その点灯回路は発振する。その後、その等価サイリスタの主電流がその保持電流より大きく設定されているため、その等価サイリスタはオンしっ放しとなる。電源オフでその点灯回路は発振停止する。
【００６２】
図２１、図２２各図に示す第２発明の各実施例は請求項３記載の切換えスイッチング手段に対応する。図２３、図２４各図に示す第２発明の各実施例は請求項４記載の切換えスイッチング手段に対応する。例えば図２１の実施例でトランジスタ３、４が同時オンしようとすると、短絡電流の一部は両トランジスタの他にダイオード６、５も流れるので、ダイオード６、５は逆方向に対しても間接的にオンとなる。その結果、直流電源１の電圧とダイオード６の順電圧の和がトランジスタ３のベース逆バイアス電圧となって供給され、直流電源２の電圧とダイオード５の順電圧の和がトランジスタ４のベース逆バイアス電圧となって供給されるので、トランジスタ３、４はオフ方向へ制御され、同時オンが防止される。図２５〜図３０各図に図２１の実施例を利用した各種の論理回路を示す。図３１〜図３８各図に図２２の実施例を利用した各種の論理回路を示す。
【００６３】
図３９に示す第３発明の実施例は請求項５記載の切換えスイッチング手段に対応し、図４０に示す第３発明の実施例は請求項６記載の切換えスイッチング手段に対応する。例えば図３９の実施例でトランジスタ３、４が同時オンしようとすると、短絡電流は優先的に両トランジスタ３からダイオード７、８よりも直流電源１、２の方へ流れるので、トランジスタ３、４の両ベース・エミッタ間接合容量は逆バイアス方向に充電されてベース逆バイアスされる。従って、トランジスタ３、４はオフ方向へ制御され、同時オンが防止される。図４１〜図４４各図に図３９の実施例を利用した各種の論理回路を示す。図４５〜図５０各図に図４０の実施例を利用した各種の論理回路を示す。
【００６４】
図５１〜図５２各図に第４発明の各実施例を示す。また、図３９〜図５０の第３発明の各実施例においてダイオード７、８が無い各実施例、即ち、ダイオード７、８を取り外し、後に残って開放状態になった導線同士を接続した各実施例も可能で、それらも第４発明の実施例である。図５１の実施例と「図３９、図４１〜図４４の第３発明の各実施例をその様にした第４発明の実施例」は請求項７記載の切換えスイッチング手段に対応し、図５２の実施例と「図４０、図４５〜図５０の第３発明の各実施例をその様にした第４発明の実施例」は請求項８記載の切換えスイッチング手段に対応する。
【００６５】
図５３〜図５４各図に第９発明の各実施例を示す。各実施例において両エミッタ間にダイオードが１つしか接続されていないが、短絡電流が流れるとき短絡電流が両ベース側へ流れる様にそのダイオードは作用する。その切換えスイッチング手段の出力端子はトランジスタ３のエミッタ側から取り出しても良いし、トランジスタ４のエミッタ側から取り出しても良い。図４１〜図５０の第３発明の各実施例においてダイオード７、８のどちらか一方だけ無い各実施例、即ち、ダイオード７、８のどちらか一方だけを取り外し、後に残って開放状態になった導線同士を接続した各実施例も可能で、それらも第９発明の実施例である。
【００６６】
図５５に示す第５発明の実施例は請求項９記載の切換えスイッチング手段に対応し、図５６に示す第５発明の実施例は請求項１０記載の切換えスイッチング手段に対応し、図５７〜図６０に示す第５発明の各実施例は請求項１１又は１２記載の切換えスイッチング手段に対応する。例えば図５５の実施例でトランジスタ３、４が同時オンしようとすると、短絡電流は優先的に両トランジスタ３からダイオード７、８よりもダイオード６、５と直流電源１０１、１０２の方へ流れるので、ダイオード６、５それぞれは逆方向に対して間接的にオンとなる。このため、直流電源１の電圧とダイオード６の順電圧の和がベース逆バイアス電圧となってトランジスタ３に供給され、直流電源２の電圧とダイオード５の順電圧の和がベース逆バイアス電圧となってトランジスタ４に供給される。その結果、トランジスタ３、４はオフ方向へ制御され、同時オンが防止される。図６１〜図６４各図に図５５の実施例を利用した論理回路（ＯＲ回路）を示す。図６１〜図６４の各実施例において電位Ｖ１とＶ２を入れ換え、各直流電源と各ダイオードの向きを逆にし、各Ｐチャネル型ＩＧＢＴをＮチャネル型で１つずつ置換え、各Ｎチャネル型ＩＧＢＴをＰチャネル型で１つずつ置換えた各実施例（ＡＮＤ回路）も可能である。図４５〜図５０の各実施例ではＮＰＮとＰＮＰの各ベース電位をＰＭＯＳとＮＭＯＳでプル・アップしたり、プル・ダウンしたりする各種の論理回路が示されているが、図５６の実施例でもこれらと同様にＮＰＮとＰＮＰの各ベース電位をＰＭＯＳとＮＭＯＳでプル・アップしたり、プル・ダウンしたりする各種の論理回路が考えられる。
【００６７】
図６５〜図６７各図に第６発明の実施例を１つずつ示す。図６５の実施例において直流電源１０１、１０２が無い場合、即ち、直流電源１０１、１０２の各両端を短絡し、直流電源１０１、１０２を取り外した場合、トランジスタ３、４の同時オン時に流れる短絡電流の全てがダイオード７、８に流れてしまうと、ダイオード５、６それぞれに電圧降下（順電圧）は生ぜず、意図した短絡防止効果は無くなる。その全てではなくてもその短絡防止効果は弱まる。そこで、その短絡電流がダイオード５、６へ全て流れる様に、あるいは、ダイオード７、８よりダイオード５、６へ流れ易く様に直流電源１０１、１０２が図６５の様に接続されている。図６６〜図６７の各実施例では『その作用のための直流電源が１つだけで済む』という効果が有る。図６５の実施例を「図５５の実施例を利用した各種の論理回路」に応用できるし、図６６の実施例も「図５６の実施例を利用した各種の論理回路」に応用できる。
【００６８】
各図中Ｖ１〜Ｖ６は電位の高さを示す符号で、Ｖ１からＶ６へ行くに従って電位は高くなるが、Ｖ１＝Ｖ２又はＶ３＝Ｖ４の場合も有る。図６８にＯＰアンプを使って電位Ｖ１〜Ｖ６を供給する電源回路の１例を示す。
【００６９】
図７４〜図７９各図に第７発明の切換えスイッチング手段の実施例を１つずつ示す。各実施例ともスイッチのオン、オフによって負荷（この切換えスイッチング手段の負荷）の両端を短絡したり、電源電圧をその両端に印加したりする。どれも「２つのゲートを持つＧＴＯサイリスタ」を用いているが、それぞれの代わりに「２つのゲートを持つＳＩサイリスタ」、「Ｐ、Ｎチャネルの接合型ＦＥＴ又はＧＴＢＴ又はＳＩＴ又はＢＳＩＴ２つ（異種類同士でも良い。）で、一方のゲートと他方のドレイン、一方のドレインと他方のゲートそれぞれを接続したサイリスタ」、「ＰＮＰ（又はＮＰＮ）と｛Ｎ（又はＰ）チャネルの接合型ＦＥＴ、ＧＴＢＴ、ＳＩＴ、ＢＳＩＴのどれか１つ｝の２つで、そのベースとそのドレイン、そのコレクタとそのゲートそれぞれを接続したサイリスタ」、「ＧＴＯサイリスタ又はＳＩサイリスタの等価回路」又は「複数の、逆バイアス電圧がプラス、マイナスの制御端子と自己ターン・オフ機能を持つ可制御スイッチング手段」等を１つずつ使用できる。図７２に示す従来の切換えスイッチング手段より大きい逆バイアス電圧をオフ駆動時にサイリスタに供給できる。
【００７０】
図７４〜図７９の各実施例において「直流電源とスイッチの直列回路」の代わりに「発光ダイオード等の発光手段と対を成す光起電力手段」を用いた実施例も可能である。（参考：特開昭５５−１０１５号、特開昭５５−３２５９号、特開昭５５−１４６１７〜２０号、特公平６−１２８７４号、実開平１−１３０５６６号、実開平１−１３５８２８号、実開平４−３５６８９号、特願昭６２−５０４７８５号、オーム社出版の『ＳＩデバイス』）
【００７１】
図８０〜図８１各図に第８発明の切換えスイッチング手段の実施例を１つずつ示す。図８１の実施例では負荷（この切換えスイッチング手段の負荷）の両端を短絡したり、電源電圧をその両端に印加したりすることができる。図８０の実施例では負荷（この切換えスイッチング手段の負荷）の両端にプラス電圧を印加したり、マイナス電圧を印加したりすることができる。図７３に示す従来の切換えスイッチング手段より大きい逆バイアス電圧をオフ駆動時に各トランジスタに供給できる。
【００７２】
最後に以下の事を補足する。
ａ）本発明者が図２の切換えスイッチング手段を用いた特願平７−３１９４６４号の図２０〜図７０に示す各切換えスイッチング手段あるいは各論理回路において従来の切換えスイッチング手段の代わりに各発明の切換えスイッチング手段を用いた各切換えスイッチング手段あるいは各論理回路も可能である。
ｂ）各実施例あるいはそれから派生する各派生実施例において、各可制御スイッチング手段をそれと相補的な関係に有る可制御スイッチング手段（例：ＮＰＮトランジスタに対してＰＮＰトランジスタ等。）で１つずつ置き換え、電圧極性もしくは電圧方向の有る各回路構成手段（例：直流電源、ダイオード等。）の向きを逆にした「元の実施例に対して電圧極性もしくは電圧方向に関して対称的な関係に有る実施例」もまた当然のことながら可能である。
【００７３】
ｃ）可制御スイッチング手段の駆動信号入力用に対を成す制御端子と主端子とは、例えば、「バイポーラ・トランジスタならばベース端子とエミッタ端子」、「接合型ＦＥＴ、ＭＯＳ・ＦＥＴ、ＧＴＢＴ、ＳＩＴならばゲート端子とソース端子」、「ＩＧＢＴならばゲート端子とエミッタ端子」、「サイリスタ、ＳＩサイリスタならばカソード側ゲート端子とカソード端子あるいはアノード側ゲート端子とアノード端子」のことである。ただし、複数の可制御スイッチング手段を組み合わせた名前の無い可制御スイッチング手段の場合、正式な制御端子と主端子の名前は付いていないが、それぞれに相当する制御端子と主端子は当然存在する。
ｄ）各実施例あるいはそれから派生する各派生実施例において直流電源１の代わりに「発光手段と光起電力手段の組合せ」を用い、別の電源手段でその発光手段を発光させ、その光起電力手段の出力電圧を電源電圧として用いても良い。
直流電源２についても同様である。これらもまた新派生実施例である。
【００７４】
ｅ）図６９〜図７１にダイオード以外の非可制御スイッチング手段を１０個示す。その他の非可制御スイッチング手段にはＰＮ接合、２端子のセレン整流器、「そのツェナー方向にツェナー電圧以上の電圧が印加されることが無いツェナー・ダイオード」、「ドレインとゲートを接続したＧＴＢＴ又はＢＳＩＴ」、「コレクタとゲートを接続した逆阻止型ＩＧＢＴ」、「アノードとカソード側ゲートを接続した逆阻止型サイリスタ」、「アノード側ゲートとカソードを接続した逆阻止型サイリスタ」、「特開平９−２７０６８７号に開示された非可制御スイッチング手段」等が有る。各実施例において使用している各ダイオードの代わりにこれらの非可制御スイッチング手段を１つずつ使用した各実施例（各派生実施例）もまた可能である。
【図面の簡単な説明】
【図１】第１発明の１実施例を示す回路図である。
【図２〜図３】各図は従来の切換えスイッチング手段を１例ずつ示す回路図である。
【図４〜図１５】各図は第１発明の実施例を１つずつ示す回路図である。
【図１６〜図１７】両図で第１発明の実施例を用いた直列インバータ回路の１例を示す回路図である。
【図１８】図１６と共に両図で第１発明の実施例を用いた直列インバータ回路の１例を示す回路図である。
【図１９】図１６と共に両図で第１発明の実施例を用いた蛍光灯点灯回路の１例を示す回路図である。
【図２０】「図２０と図１７両図」、「図２０と図１８両図」それぞれで第１発明の実施例を用いた直列インバータ回路を１例ずつ示す回路図であり、「図２０と図１９両図」で第１発明の実施例を用いた蛍光灯点灯回路の１例を示す回路図である。
【図２１〜図３８】各図は第２発明の実施例を１つずつ示す回路図である。
【図３９〜図５０】各図は第３発明の実施例を１つずつ示す回路図である。
【図５１〜図５２】各図は第４発明の実施例を１つずつ示す回路図である。
【図５３〜図５４】各図は第９発明の実施例を１つずつ示す回路図である。
【図５５〜図６４】各図は第５発明の実施例を１つずつ示す回路図である。
【図６５〜図６７】各図は第６発明の実施例を１つずつ示す回路図である。
【図６８】各実施例で使用する電源回路の１例を示す回路図である。
【図６９〜図７１】各図は各発明の構成要素となる、ダイオード以外の非可制御スイッチング手段の例を複数個ずつ示す回路図である。
【図７２〜図７３】各図は従来の切換えスイッチング手段を１例ずつ示す回路図である。
【図７４〜図７９】各図は第７発明の実施例を１つずつ示す回路図である。
【図８０〜図８１】各図は第８発明の実施例を１つずつ示す回路図である。
【符号の説明】
ＳＷ１〜ＳＷ９スイッチ端子
３８、１３８負荷
３９蛍光灯[0001]
【Technical field】
In each of the first to eighth inventions, in "a switching switching means having a changeover switch function constituted by connecting two controllable switching means in series", the controllable switching means are prevented from being turned on simultaneously or simultaneously turned on. The switching switching means that can reduce or reduce the short-circuit current (through current) flowing through both controllable switching means. Of course, each switching switching means can be used as a three-terminal switching means or a two-terminal switching means. Accordingly, each invention is very useful in the fields of power conversion devices, logic circuits, various drive devices, various devices using these, or various circuits.
[0002]
[Background]
Two conventional switching means having a simultaneous on-prevention function are shown in FIGS. In the switching switching means of FIG. 2, a DC power source or the like is connected between the switch terminals SW4 and SW6, and an AC power source or the like can be connected between the switch terminals SW4 and SW6 when the diodes 9 and 10 are provided. The operation is as follows. Even if the transistors 3 and 4 are turned on at the same time, a part of the short-circuit current flowing through both transistors passes from the switch terminal SW4 to the transistor 3, diode 6, the base-emitter capacitance of the transistor 4 and the transistor 4 to the switch terminal SW6. Therefore, the accumulated charge of the base-emitter capacitance of the transistor 4 is extracted, and the base-emitter is “the voltage obtained by subtracting the forward voltage of the diode 6 from the sum of the forward voltages of the diodes 7 and 8”. Reverse biased. At the same time, another part of the short-circuit current flows from the switch terminal SW4 to the switch terminal SW6 via the transistor 3, the base-emitter capacitance of the transistor 3, the diode 5 and the transistor 4. The accumulated charge of the capacitance is extracted, and the base and emitter are reverse-biased by “a voltage obtained by subtracting the forward voltage of the diode 5 from the sum of the forward voltages of the diodes 7 and 8”. As a result, both transistors 3 and 4 are simultaneously controlled in the off direction, and complete simultaneous on of both transistors 3 and 4 is completely prevented, and the short-circuit current is automatically limited to decrease or not flow at all. Or In this way, the switching switching means of FIG. 2 has a simultaneous on prevention function.
[0003]
On the other hand, in the switching switching means shown in FIG. 3, a DC power source or the like is connected between the switch terminals SW10 and SW12. When the diodes 9 and 10 are provided, an AC power source or the like can be connected between the switch terminals SW10 and SW12. The operation is as follows. If the transistors 3 and 4 are turned on at the same time, a part of the short-circuit current flowing through both of them is switched from the switch terminal SW10 to the transistor 3, "the capacitance between the base and emitter of the transistor 3 or the diode 6", "the base of the transistor 4 Since the capacitance between the emitters or the diode 5 "and the transistor 4 flows to the switch terminal SW12, the accumulated charges of the capacitances between the bases and the emitters of the transistors 3 and 4 are extracted, and the diodes 6 and 6 are connected between the bases and the emitters. Reverse biased at each forward voltage of 5. As a result, both transistors 3 and 4 are simultaneously controlled in the off direction, and both transistors 3 and 4 are completely prevented from being turned on at the same time, and the short-circuit current is automatically limited to be small or not flow at all. To do. In this way, the switching switching means of FIG. 3 has a simultaneous on prevention function.
[0004]
In the switching switching means, instead of the transistor 3, “the polarity of the reverse bias voltage between the control terminal and the main terminal (for example, the gate terminal and the source terminal of the MOS / FET) paired for driving signal input is set. If it is minus, it has a self-turn-off function (= self-extinguishing function) and normally-off controllable switching means ", MOS / FET, IGBT, GTBT (bipolar FET with grounded groove electrode), Any of SIT, BSIT (bipolar mode SIT), GTO thyristor, SI thyristor or “switching means combining a plurality of controllable switching means (reference example: Japanese Patent No. 2796567)” can be used. Then, instead of the transistor 4, “a normally-off controllable switching means having a self-turn-off function with a positive reverse bias voltage polarity between the control terminal and the main terminal paired for driving signal input” Then you can use anything as before. In addition, it is necessary to note that the above-described simultaneous ON prevention action does not work when the forward voltages of the diodes 5 and 6 are larger than the forward voltages of the diodes 7 and 8.
[0005]
However, each of the conventional switching switching means shown in FIGS. 2 and 3 has a first problem that “the magnitude of the drive reverse bias voltage for simultaneous ON prevention is small”. (First problem)
For example, when using one plus gate type and one minus gate type having a large current capacity as a controllable switching means instead of each of the transistors 3 and 4 with a GTO thyristor, a large gate is required to provide a simultaneous on prevention function. A reverse bias voltage is required. If a large drive reverse bias voltage can be supplied, one normally-on controllable switching means can be used instead of each of the transistors 3 and 4. Further, when using normally-off controllable switching means such as the transistors 3 and 4, the simultaneous ON prevention function can be enhanced by increasing the drive reverse bias voltage.
[0006]
However, in the switching switching means of FIG. 2, the base reverse bias voltage for simultaneous ON prevention that can be supplied to each of the transistors 3 and 4 is “subtract the forward voltages of the diodes 5 and 6 from the sum of the forward voltages of the diodes 7 and 8”. It can only be “size”. If diodes 7 and 8 each have a large forward voltage and diodes 5 and 6 each have a small forward voltage, the first problem can be solved, and normally-on controllable switching. The use of means will also become possible. On the other hand, the voltage drop due to each of the diodes 7 and 8 is large, and it is necessary to use a power source with a large voltage to compensate for the voltage loss due to each voltage drop of the diodes 7 and 8, and the energy loss becomes large. End up.
[0007]
Further, in the switching switching means of FIG. 3, each base reverse bias voltage for simultaneous ON prevention that can be supplied to the transistors 3 and 4 depends on each forward voltage of the diodes 6 and 5. If diodes 6 and 5 each having a large forward voltage are used, the short-circuit current flowing through the transistors 3 and 4 does not flow through the diodes 6 and 5 in the simultaneous ON state, but only flows through the diodes 7 and 8. 5 does not cause a voltage drop, and the above-described simultaneous ON prevention function does not work.
[0008]
Then, each of the conventional switching switching means shown in FIGS. 2 and 3 has the second problem that “the ratio of the short-circuit current that can be used to prevent the on-drive for preventing the simultaneous on-state is low”. (Second problem)
In each switching switching means of FIGS. 2 and 3, a short-circuit current is guided to each base side of the transistors 3 and 4 in the simultaneous ON state, and the base forward bias current which is turned on is absorbed in the short-circuit current. The amount of forward bias current flowing in the driven base is suppressed. As a result, the total amount of short-circuit current is reduced, and the simultaneous on-preventing action works strongly. However, if the proportion of the short-circuit current that can be used is low, the total short-circuit current amount increases to compensate for this, and the simultaneous on-prevention action becomes weak.
[0009]
This will be specifically described. Consider a case where the turn-off of the transistor 4 is delayed in the switching switching means of FIG. 2, and a base forward bias current is supplied between the emitter and base of the transistor 3 by, for example, a series circuit of a DC power source and a resistor, and the transistors are turned on simultaneously. A part of the short-circuit current flows from the switch terminal SW4 to the switch terminal SW6 via the transistor 3, the diodes 7 and 8, and the transistor 4, but another part of the short-circuit current is transmitted from the switch terminal SW4 to the transistor 3 described above. 3 flows through the diode 5 and the transistor 4 to the switch terminal SW6. Another part of the short-circuit current flows from the switch terminal SW4 to the switch terminal SW6 via the diode 6 and the like. Therefore, it can be seen that the base forward bias current supplied by the “DC power supply and resistor series circuit” is absorbed as a part of the short-circuit current, if not all. The higher the percentage of short-circuit current that flows through the diodes 7 and 8, the lower the percentage of short-circuit current that can be used to block on-drive to prevent simultaneous on-off, but as a result, it is supplied by the series circuit The amount of base forward bias current increases, the total amount of short-circuit current also increases, and the simultaneous on-prevention action is weakened. The same applies to the switching switching means shown in FIG.
[0010]
Therefore, the first aspect of the present invention can be used to increase the drive reverse bias voltage for preventing simultaneous ON without increasing voltage loss or energy loss, and to prevent ON drive for preventing simultaneous ON. The object is to provide a switching means that can increase the proportion of the short-circuit current. (Object of the first invention)
[0011]
The second aspect of the invention is to provide a switching device that can increase the drive reverse bias voltage for preventing simultaneous ON without increasing voltage loss or energy loss. (Object of the second invention)
[0012]
According to the third aspect of the present invention, “the ratio of the short-circuit current that can be used to prevent the on-drive for preventing the simultaneous on-time by increasing the magnitude of the drive reverse bias voltage for preventing the simultaneous on-on without increasing the voltage loss and the energy loss. The purpose is to provide a switching means that can increase the amount of switching. (Object of the third invention)
[0013]
The fourth aspect of the present invention is to provide a switching device that can increase the drive reverse bias voltage for preventing simultaneous ON without increasing voltage loss or energy loss. (Object of the fourth invention)
[0014]
According to the fifth aspect of the present invention, “a short-circuit current that can be used to increase the reverse bias voltage for preventing simultaneous ON without increasing voltage loss and energy loss, and can be used to prevent ON drive for preventing simultaneous ON” The purpose of this is to provide a switching means that can increase the ratio. (Object of the fifth invention)
[0015]
The sixth aspect of the invention aims to provide a switching means that can increase the proportion of the short-circuit current that can be used to prevent the on-drive to prevent simultaneous on-state. (Purpose of the sixth invention)
[0016]
A seventh object of the present invention is to provide a switching device that can increase the drive reverse bias voltage for preventing simultaneous ON without increasing voltage loss or energy loss. (Object of the seventh invention)
[0017]
An object of the eighth invention is to provide switching switching means that “the drive reverse bias voltage for preventing simultaneous ON can be increased without increasing voltage loss and energy loss”. (Object of the eighth invention)
[0018]
[Disclosure of the first invention]
According to a first aspect of the present invention, there is provided the switching switching means according to the first aspect, wherein "a large driving reverse bias voltage is supplied to the second controllable switching means, and a short-circuit current is supplied to the first and second non-controllable switching means. The first DC power supply means for facilitating the flow toward the third non-controllable switching means rather than supplying a large drive reverse bias voltage to the first controllable switching means and reducing the short-circuit current. The second DC power supply means for facilitating the flow toward the fourth non-controllable switching means than the first and second non-controllable switching means ”is provided.
[0019]
In this way, if the first and second controllable switching means are simultaneously turned on, first, a short circuit current is transferred from the first controllable switching means to the third non-controllable switching means, The DC power supply means, the capacitance between the control terminal ct2 and the main terminal mt2 and the second controllable switching means, charging the capacitance between the control terminal ct2 and the main terminal mt2 in the reverse bias direction, 2 controllable switching means are controlled in the off direction. At the same time, the short-circuit current from the first controllable switching means to the capacitance between the control terminal ct1 and the main terminal mt1 The fourth non-controllable switching means, the second DC power supply means, and the second controllable switching means , The electrostatic capacitance between the control terminal ct1 and the main terminal mt1 is charged in the reverse bias direction, and the first controllable switching means is controlled in the OFF direction.
[0020]
As a result, the magnitude of each drive reverse bias voltage becomes larger than the conventional voltage of each of the first and second DC power supply means, and “drive reverse bias voltage for preventing simultaneous ON without increasing voltage loss or energy loss. The first invention has the first effect that the size of can be increased. (First effect of the first invention)
[0021]
Further, the short-circuit current is greater in the “series circuit of the third non-controllable switching means and the first DC power supply means” than in the first and second non-controllable switching means and in the “fourth non-controllable switching means”. Since the controllable switching means and the series circuit of the second DC power supply means are easier to flow, the first is that “the ratio of the short-circuit current that can be used to prevent the on-drive to prevent simultaneous on-state can be increased”. The second effect is in the first invention.
(Second effect of the first invention)
[0022]
When the first invention corresponds to the switching switching means described in claim 2, since only one of the first and second DC power supply means is provided, the magnitude of the drive reverse bias voltage can be increased. Only one of the two controllable switching means, and only one can increase the proportion of available short-circuit current.
[0023]
[Disclosure of Second Invention]
According to a second aspect of the present invention, there is provided switching switching means according to claim 3, wherein "the first DC power supply means for supplying a large driving reverse bias voltage to the first controllable switching means" is provided, The second DC power supply means for supplying a large drive reverse bias voltage to the controllable switching means is provided.
[0024]
Thus, if the first and second controllable switching means are turned on at the same time, a part of the short-circuit current is transferred from the first controllable switching means to the third and fourth non-controllable switching means. And the second controllable switching means, the third and fourth non-controllable switching means are each turned on indirectly with respect to the reverse voltage. For this reason, the first DC power source means reversely biases the control terminal ct1 and the main terminal mt1 via the third non-controllable switching means to control the first controllable switching means in the OFF direction. At the same time, the second DC power source means reversely biases the control terminal ct2 and the main terminal mt2 via the fourth non-controllable switching means to control the second controllable switching means in the OFF direction. As a result, the magnitude of each drive reverse bias voltage becomes larger than the conventional voltage of each of the first and second DC power supply means, and “drive reverse bias voltage for preventing simultaneous ON without increasing voltage loss or energy loss. The second invention has the effect that the size of “can be increased”. (Effect of the second invention)
[0025]
When the second invention corresponds to the switching switching means according to claim 4, since only one of the first and second DC power supply means is provided, the magnitude of the drive reverse bias voltage can be increased. Only one of the two controllable switching means.
[0026]
[Disclosure of Third Invention]
According to a third aspect of the present invention, there is provided the switching switching means according to claim 5, wherein “a large drive reverse bias voltage is supplied to each of the first and second controllable switching means, and a short-circuit current is supplied to the first and second non-switching means. The first and second DC power supply means for facilitating the flow between the control terminal ct1 and the main terminal mt1 and the control terminal ct2 and the main terminal mt2 than the controllable switching means are provided. It is characterized by.
[0027]
Thus, if the first and second controllable switching means are turned on at the same time, a short-circuit current is transferred from the first controllable switching means to the capacitance between the control terminal ct1 and the main terminal mt1, and the first 1, the second DC power supply means, the capacitance between the control terminal ct2 and the main terminal mt2, and the second controllable switching means, between the control terminal ct1 and the main terminal mt1, and between the control terminal ct2 and the main terminal mt2 Are simultaneously charged in the reverse bias direction, and the first and second controllable switching means are simultaneously controlled in the off direction.
[0028]
As a result, the magnitude of each drive reverse bias voltage becomes larger than the conventional voltage of each of the first and second DC power supply means, and “drive reverse bias voltage for preventing simultaneous ON without increasing voltage loss or energy loss. The third invention has the first effect that the size of can be increased. (First effect of the third invention)
[0029]
Further, since the short circuit current is more likely to flow in the series circuit of the first and second DC power supply means than the first and second non-controllable switching means, The third effect is that the ratio of the short-circuit current that can be used for blocking can be increased. (Second effect of the third invention)
[0030]
When the third invention corresponds to the switching switching means described in claim 6, the series circuit of the first and second DC power supply means is a DC power supply means integrated into one.
[0031]
[Disclosure of Fourth Invention]
According to a fourth aspect of the present invention, there is provided switching switching means according to claim 7, wherein "the first and second DC power supply means for supplying a large drive reverse bias voltage to each of the first and second controllable switching means are connected in series. A circuit is provided.
[0032]
As a result, if the first and second controllable switching means are turned on at the same time, a part of the short-circuit current is transferred from the first controllable switching means to the capacitance between the control terminal ct1 and the main terminal mt1. The first and second DC power supply means, the capacitance between the control terminal ct2 and the main terminal mt2 and the second controllable switching means flow to the series circuit of the first and second DC power supply means. The electrostatic capacitance between the control terminal ct1 and the main terminal mt1 and the electrostatic capacitance between the control terminal ct2 and the main terminal mt2 are simultaneously reverse-biased to control the first and second controllable switching means simultaneously in the off direction. As a result, the magnitude of each drive reverse bias voltage becomes larger than the conventional voltage of each of the first and second DC power supply means, and “drive reverse bias voltage for preventing simultaneous ON without increasing voltage loss or energy loss. The fourth invention has the effect that the size of “can be increased”. (Effect of the fourth invention)
[0033]
When the fourth invention corresponds to the switching switching means described in claim 8, the series circuit of the first and second DC power supply means is a DC power supply means integrated into one.
[0034]
[Disclosure of fifth invention]
According to a fifth aspect of the present invention, there is provided switching switching means according to claim 9, wherein "the first DC power supply means for supplying a large drive reverse bias voltage to the first controllable switching means", , The second and third DC power supply means for facilitating the flow toward the third and fourth non-controllable switching means than the second non-controllable switching means "and" the second controllable switching means " The fourth DC power supply means for supplying a large driving reverse bias voltage is provided.
[0035]
In this way, if the first and second controllable switching means are simultaneously turned on, a short-circuit current is transferred from the first controllable switching means to the third non-controllable switching means, the second, Since the third DC power supply means, the fourth non-controllable switching means and the second controllable switching means flow, the third and fourth non-controllable switching means are indirect with respect to the reverse voltage, respectively. Is turned on. For this reason, the first DC power source means reversely biases the control terminal ct1 and the main terminal mt1 via the third non-controllable switching means to control the first controllable switching means in the OFF direction. At the same time, the fourth DC power source means reversely biases the control terminal ct2 and the main terminal mt2 via the fourth non-controllable switching means to control the second controllable switching means in the OFF direction.
[0036]
As a result, the magnitude of each drive reverse bias voltage becomes larger than the conventional voltage of each of the first and second DC power supply means, and “drive reverse bias voltage for preventing simultaneous ON without increasing voltage loss or energy loss. The fifth effect of the present invention is to increase the size of "." (First effect of the fifth invention)
[0037]
Further, the short-circuit current is larger than that of the first and second non-controllable switching means. The third non-controllable switching means, the second and third DC power supply means, and the fourth non-controllable switching means. In the fifth aspect of the present invention, there is a second effect that “the ratio of the short-circuit current that can be used to prevent the on-drive to prevent simultaneous on-state can be increased”. (Second effect of the fifth invention)
[0038]
When the fifth invention corresponds to the switching switching means according to claim 10, the series circuit of the first and second DC power supply means becomes a DC power supply means integrated into one.
[0039]
When the fifth invention corresponds to the switching switching means according to claim 11 or 12, since one or both of the first and second DC power supply means are absent, the magnitude of the drive reverse bias voltage can be increased. Only one or both of the first and second controllable switching means cannot be increased.
[0040]
[Disclosure of the sixth invention]
According to a sixth aspect of the present invention, there is provided the switching switching means according to the thirteenth aspect, wherein “a short-circuit current flows toward the third and fourth non-controllable switching means rather than the first and second non-controllable switching means. The first and second DC power supply means for facilitating the operation are provided.
[0041]
In this way, if the first and second controllable switching means are simultaneously turned on, a short-circuit current is transferred from the first controllable switching means to the third non-controllable switching means, the first, It flows to the second DC power source means, the fourth non-controllable switching means, and the second controllable switching means, and a voltage drop (forward voltage) is applied to each of the third and fourth non-controllable switching means. Arise. Therefore, the third non-controllable switching means reversely biases the control terminal ct1 and the main terminal mt1 with the forward voltage to control the first controllable switching means in the off direction, and at the same time, the fourth non-controllable switching means The non-controllable switching means reversely biases the control terminal ct2 and the main terminal mt2 with the forward voltage to control the second controllable switching means in the off direction. As a result, the short circuit current is more likely to flow in the series circuit of the first and second DC power supply means than in the first and second non-controllable switching means. The sixth invention has the effect that the ratio of the short-circuit current that can be used to prevent the above can be increased. (Effect of the sixth invention)
[0042]
When the sixth invention corresponds to the switching switching means described in claim 14, the series circuit of the first and second DC power supply means is a DC power supply means integrated into one.
[0043]
[Disclosure of seventh invention]
According to a seventh aspect of the present invention, there is provided switching switching means according to claim 15, wherein "the first DC power supply means for supplying a large drive reverse bias voltage between the control terminal ct1a and the main terminal mt1a" and "control terminal ct2a · main terminal The second DC power supply means for supplying a large drive reverse bias voltage between mt2a "is provided.
[0044]
Thereby, when the on / off switching means is turned on when the controllable switching means is on, the second non-controllable switching means, the controllable switching means, from the third DC power supply means, Since the short-circuit current flows through the first non-controllable switching means and the on / off switching means, the first and second non-controllable switching means are turned on indirectly with respect to the reverse voltage, respectively. Become. For this reason, the first DC power supply means reversely biases between the control terminal ct1a and the main terminal mt1a via the first non-controllable switching means, and at the same time, the second DC power supply means is connected to the second non-controllable means. Since the controllable switching means is controlled in the OFF direction by reversely biasing the control terminal ct1b and the main terminal mt1b via the controllable switching means, the controllable switching means is turned off. As a result, the magnitude of each drive reverse bias voltage becomes larger than the conventional voltage of each of the first and second DC power supply means, and “drive reverse bias voltage for preventing simultaneous ON without increasing voltage loss or energy loss. The seventh invention has the effect that the size of “can be increased”. (Effect of the seventh invention)
[0045]
When the seventh invention corresponds to the switching switching means according to claim 16, since there is only one of the first and second DC power supply means, the magnitude of the drive reverse bias voltage can be increased by the control terminal ct1a, the main Only between the terminal mt1a or between the control terminal ct1b and the main terminal mt1b.
[0046]
[Disclosure of eighth invention]
According to an eighth aspect of the present invention, there is provided switching switching means according to claim 17, wherein "the first DC power supply means for supplying a large drive reverse bias voltage between control terminal ct1 and main terminal mt1a" and "control terminal ct2 · main terminal". The second DC power supply means for supplying a large drive reverse bias voltage between mt2a "is provided, and the load of this switching means is connected between the main terminal mt1a and the main terminal mt2a for use.
[0047]
Thus, when the first controllable switching means is turned on when the second controllable switching means is on, the first controllable switching means, the load described above, from the fourth DC power supply means. Since the load current flows through the second non-controllable switching means, the second non-controllable switching means is indirectly turned on with respect to the reverse voltage. For this reason, the second DC power source means reversely biases the control terminal ct2 and the main terminal mt2a via the second non-controllable switching means to control the second controllable switching means in the OFF direction. Thus, the second controllable switching means is turned off.
[0048]
On the other hand, when the second controllable switching means is turned on when the first controllable switching means is on, the second controllable switching means, the load described above and the third DC power supply means Since the load current flows through the first non-controllable switching means, the first non-controllable switching means is indirectly turned on with respect to the reverse voltage. For this reason, the first DC power source means reversely biases the control terminal ct1 and the main terminal mt1a via the first non-controllable switching means to control the first controllable switching means in the OFF direction. Thus, the first controllable switching means is turned off.
[0049]
As a result, the magnitude of each drive reverse bias voltage becomes larger than the conventional voltage of each of the first and second DC power supply means, and “drive reverse bias voltage for preventing simultaneous ON without increasing voltage loss or energy loss. The eighth invention has the effect that the size of “can be increased”. (Effect of the eighth invention)
Note that the voltage of the fourth DC power supply means is supplied to the load by the switching switching means, or the voltage of the third DC power supply means is supplied in the opposite direction. Switching takes place.
[0050]
When the eighth invention corresponds to the switching switching means according to claim 18, since there is only the fourth DC power supply means, when the second controllable switching means is on, both ends of the load are not connected to the first non-switching means. Short-circuited by a series circuit of the controllable switching means and the second controllable switching means. Therefore, the voltage of the fourth DC power supply means is supplied to the load or the voltage zero is supplied to the load by the switching switching means.
[0051]
[Best Mode for Carrying Out the Invention]
In order to explain each invention in detail, this will be described with reference to the accompanying drawings. In the embodiment of the first invention shown in FIG. 1, each corresponds to each of the above-described components as follows. a) The transistors 3 and 4 serve as the first and second controllable switching means described above.
b) The DC power supplies 1 and 2 are the first and second DC power supply means described above.
c) The diodes 7, 8, 6, and 5 are the first to fourth non-controllable switching means described above.
d) The base terminal and the emitter terminal of the transistor 3 are connected to the control terminal ct1 and the main terminal mt1 described above.
e) The base terminal and the emitter terminal of the transistor 4 are connected to the control terminal ct2 and the main terminal mt2 described above.
[0052]
A DC power source or the like is connected between the switch terminals SW1 and SW3. When the diodes 9 and 10 are provided, an AC power source or the like can be connected between the switch terminals SW1 and SW3. The circuit operation is as follows. Even if the transistors 3 and 4 are turned on at the same time, a short-circuit current flowing through both transistors also flows through the diodes 7 and 8, causing a voltage drop (the sum of both forward voltages). Is applied to the base and emitter of the transistor 4 via the diode 6, and the transistor 4 is controlled in the OFF direction. At the same time, the sum of both forward voltages and the DC power supply 2 becomes a reverse bias voltage, which is applied between the base and emitter of the transistor 3 via the diode 5, and the transistor 3 is controlled in the off direction.
[0053]
Alternatively, “the short-circuit current flowing from the switch terminal SW1 to the switch terminal SW3 via the collector-emitter of the transistor 3, the DC power supply 1, the diode 6, the base-emitter of the transistor 4 and the emitter-collector” is The transistor 4 is controlled in the off direction by reverse biasing between the emitters. At the same time, the “short-circuit current flowing from the switch terminal SW1 to the switch terminal SW3 via the collector-emitter and emitter-base of the transistor 3, the diode 5, the DC power supply 2, and the emitter-collector of the transistor 4” is the emitter-base of the transistor 3. The transistor 3 is controlled in the off direction by reverse biasing the gap. As a result, complete simultaneous turn-on of both transistors 3, 4 is completely prevented and the short circuit current is automatically limited and reduced. As described above, the switching switching means of FIG. 1 has a simultaneous on-prevention function, and the magnitudes of the respective reverse bias voltages are larger than the voltages of the DC power supplies 1 and 2 as compared with the prior art. This is true for all the first inventions.
[0054]
In addition, instead of the transistor 3, the reverse bias voltage polarity between the control terminal and the main terminal (for example, the gate terminal and the source terminal of the MOS / FET) paired for the drive signal input is negative, and the self-turn "Controllable switching means with off function", regardless of normally off, normally on, for example, junction FET, MOS-FET, IGBT, GTBT (bipolar FET with grounded groove electrode), SIT , BSIT (bipolar mode SIT), GTO thyristor, SI thyristor, “P, N-channel junction FET or GTBT or SIT or BSIT (one of different types may be used) and one gate and the other drain. Thyristor that connects the drain of each other and the other gate ”or“ PNP (N-channel connection) Type FET, GTBT, SIT, BSIT) or NPN and (P-channel junction type FET, GTBT, SIT, BSIT) Anything can be used, such as its drain, its collector and its thyristor connected to its gate.
[0055]
If the "controllable switching means having a self-turn-off function with a positive reverse bias voltage polarity between the control terminal and the main terminal paired for driving signal input" instead of the transistor 4 is normally off Regardless of normally-on, anything can be used as described above. This also applies to other embodiments described later and other embodiments of other inventions. In this way, a number of new embodiments are derived from each embodiment by replacing each component. (Derived Example)
[0056]
Each embodiment of the first invention shown in each of FIGS. 4 and 5 corresponds to the switching means of the second aspect. As described above, when only the reverse bias voltage of one transistor is increased, it becomes easy to drive off only one of them, so that the simultaneous on-prevention action is stronger than before.
[0057]
As in the embodiment of the first invention shown in FIG. 6, the connection positions of the diode 6 and the DC power source 1 may be interchanged. Alternatively, the connection position of the diode 5 and the DC power supply 2 may be interchanged. If the two embodiments of FIG. 6 having the diodes 9 and 10 are connected in reverse parallel at the switch terminals SW7 and SW9 and the switch terminals SW8 are connected to each other, a bidirectional switching switching means can be configured. The same applies to the other embodiments and the embodiments of the other inventions.
[0058]
Each embodiment of the first invention shown in each of FIGS. 7 to 12 is various logic circuits using the embodiment of FIG. In each figure, V1 to V4 are symbols indicating the height of the potential, and the potential increases as it goes from V1 to V4. However, there are cases where “V1 = V2 or V3 = V4”, and “V1 is higher than V2, In some cases, V3 is higher than V4. In each embodiment, one diode is connected to each of the V4 power supply line and the V1 power supply line. However, in order to prevent NPN or the like or PNP from short-circuiting each DC power supply for supplying the reverse bias voltage. There is.
[0059]
In the embodiment of the switching switching means of the first invention shown in each of FIGS. 13 to 15, each capacitor or the like serves as an insulated DC power supply (DC power supplies 1 and 2 in FIG. 1).
[0060]
Each of “FIGS. 16 and 17” and “FIGS. 16 and 18” shows one series inverter circuit using the switching means of the first invention. "Figures 16 and 19" show a fluorescent lamp lighting circuit using the switching means of the first invention. Each of “FIGS. 20 and 17” and “FIGS. 20 and 18” shows a series inverter circuit using the switching means of the first invention. 20 and 19 show a fluorescent lamp lighting circuit using the switching means of the first invention. In each figure, 38 is a load, 39 is a fluorescent lamp, and the conducting wires having the same reference numerals t20 to t23 are in a connected state. On / off of each transistor is controlled according to the direction of current flowing through the diodes 54 and 55 connected in reverse parallel.
[0061]
Each circuit uses the embodiment of FIG. 6, but instead of the switching switching means of FIG. 6, FIGS. 21 to 24, 39 to 40, 53 to 58, and 65 to 66 described later. A series inverter circuit or a fluorescent lamp lighting circuit using each switching means is also possible. In this case, each circuit without the diodes 7 and 8 is possible as described above. In the circuit portion of FIG. 18, the collector grounded NPN is connected to improve the output voltage waveform of the base grounded PNP, and the rise and fall of the output voltage waveform are sharpened. However, the waveform may be improved by additionally connecting an NPN with a common collector. There is a similar SUS (silicon unilateral switch, negative resistance element) in which the equivalent thyristor and Zener diode are connected to the circuit portion of FIG. 19, but this is a starting means. When the voltage between the two power lines marked t20 and t22 reaches a predetermined value when the power is turned on, the equivalent thyristor is triggered to turn on, and the lighting circuit oscillates. After that, since the main current of the equivalent thyristor is set larger than the holding current, the equivalent thyristor is turned on. When the power is turned off, the lighting circuit stops oscillation.
[0062]
Each embodiment of the second invention shown in FIG. 21 and FIG. 22 corresponds to the switching means of claim 3. Each embodiment of the second invention shown in each of FIGS. 23 and 24 corresponds to the switching means of the fourth aspect. For example, in the embodiment shown in FIG. 21, when the transistors 3 and 4 try to be turned on simultaneously, a part of the short-circuit current also flows through the diodes 6 and 5 in addition to the two transistors. Turned on. As a result, the sum of the voltage of the DC power source 1 and the forward voltage of the diode 6 is supplied as the base reverse bias voltage of the transistor 3, and the sum of the voltage of the DC power source 2 and the forward voltage of the diode 5 is the base reverse bias of the transistor 4. Since the voltage is supplied, the transistors 3 and 4 are controlled in the off direction, and simultaneous on is prevented. 25 to 30 show various logic circuits using the embodiment of FIG. FIGS. 31 to 38 show various logic circuits using the embodiment of FIG.
[0063]
The embodiment of the third invention shown in FIG. 39 corresponds to the switching switching means according to claim 5, and the embodiment of the third invention shown in FIG. 40 corresponds to the switching switching means according to claim 6. For example, in the embodiment of FIG. 39, when the transistors 3 and 4 try to be turned on simultaneously, the short-circuit current preferentially flows from both transistors 3 to the DC power sources 1 and 2 rather than the diodes 7 and 8. Both base-emitter junction capacitances are charged in the reverse bias direction and reversely biased. Therefore, the transistors 3 and 4 are controlled in the off direction, and simultaneous on is prevented. 41 to 44 show various logic circuits using the embodiment of FIG. Each of FIGS. 45 to 50 shows various logic circuits using the embodiment of FIG.
[0064]
Each embodiment of the fourth invention is shown in FIGS. Further, in each embodiment of the third invention of FIGS. 39 to 50, each embodiment in which the diodes 7 and 8 are not provided, that is, each embodiment in which the diodes 7 and 8 are removed and the conductive wires remaining after being opened are connected to each other. Examples are possible and they are also examples of the fourth invention. The embodiment of FIG. 51 and the “embodiment of the fourth invention in which the embodiments of the third invention of FIGS. 39 and 41 to 44 are so configured” correspond to the switching means according to claim 7, and FIG. The embodiment of the present invention and "the embodiment of the fourth invention in which each embodiment of the third invention of FIGS. 40 and 45 to 50 is made so" corresponds to the switching means described in claim 8.
[0065]
Each embodiment of the ninth invention is shown in FIGS. In each embodiment, only one diode is connected between both emitters, but when the short-circuit current flows, the diode acts so that the short-circuit current flows to both bases. The output terminal of the switching switching means may be taken out from the emitter side of the transistor 3 or from the emitter side of the transistor 4. In each embodiment of the third invention of FIGS. 41 to 50, each embodiment in which only one of the diodes 7 and 8 is not provided, that is, only one of the diodes 7 and 8 is removed, and is left open afterwards. Each embodiment in which the conducting wires are connected to each other is also possible, and these are also embodiments of the ninth invention.
[0066]
The embodiment of the fifth invention shown in FIG. 55 corresponds to the switching switching means according to claim 9, and the embodiment of the fifth invention shown in FIG. 56 corresponds to the switching switching means according to claim 10, and FIGS. Each embodiment of the fifth invention shown in FIG. 60 corresponds to the switching means of claim 11 or 12. For example, in the embodiment of FIG. 55, when the transistors 3 and 4 try to turn on simultaneously, the short circuit current preferentially flows from both transistors 3 to the diodes 6 and 5 and the DC power supplies 101 and 102 rather than the diodes 7 and 8. Each of the diodes 6 and 5 is indirectly turned on in the reverse direction. Therefore, the sum of the voltage of the DC power supply 1 and the forward voltage of the diode 6 becomes the base reverse bias voltage and is supplied to the transistor 3, and the sum of the voltage of the DC power supply 2 and the forward voltage of the diode 5 becomes the base reverse bias voltage. And supplied to the transistor 4. As a result, the transistors 3 and 4 are controlled in the off direction, and simultaneous on is prevented. Each of FIGS. 61 to 64 shows a logic circuit (OR circuit) using the embodiment of FIG. 61 to 64, the potentials V1 and V2 are interchanged, the directions of the DC power supplies and the diodes are reversed, each P-channel IGBT is replaced one by one with the N-channel type, and each N-channel IGBT is replaced. Each embodiment (AND circuit) in which the P channel type is replaced one by one is also possible. Each of the embodiments of FIGS. 45 to 50 shows various logic circuits for pulling up and pulling down the base potentials of NPN and PNP with PMOS and NMOS, but the embodiment of FIG. However, similarly to these, various logic circuits are conceivable in which the base potentials of NPN and PNP are pulled up and pulled down by PMOS and NMOS.
[0067]
Each of FIGS. 65 to 67 shows one embodiment of the sixth invention. In the embodiment of FIG. 65, when the DC power supplies 101 and 102 are not present, that is, when both ends of the DC power supplies 101 and 102 are short-circuited and the DC power supplies 101 and 102 are removed, the short-circuit current that flows when the transistors 3 and 4 are simultaneously turned on. When all of the current flows through the diodes 7 and 8, no voltage drop (forward voltage) occurs in each of the diodes 5 and 6, and the intended short-circuit prevention effect is lost. Even if not all, the short-circuit prevention effect is weakened. Therefore, the DC power supplies 101 and 102 are connected as shown in FIG. 65 so that the short-circuit current flows all to the diodes 5 and 6 or more easily flows from the diodes 7 and 8 to the diodes 5 and 6. Each of the embodiments shown in FIGS. 66 to 67 has an effect that “only one DC power source is required for the operation”. The embodiment of FIG. 65 can be applied to “various logic circuits using the embodiment of FIG. 55”, and the embodiment of FIG. 66 can also be applied to “various logic circuits using the embodiment of FIG. 56”.
[0068]
In the drawings, V1 to V6 are symbols indicating the height of the potential, and the potential increases from V1 to V6. However, there are cases where V1 = V2 or V3 = V4. FIG. 68 shows an example of a power supply circuit that supplies potentials V1 to V6 using an OP amplifier.
[0069]
74 to 79 show one embodiment of the switching switching means of the seventh invention. In each embodiment, both ends of a load (the load of this switching unit) are short-circuited or a power supply voltage is applied to both ends by turning on and off the switch. All use “GTO thyristors with two gates”, but instead of “SI thyristors with two gates”, “P, N-channel junction FET or GTBT or SIT or BSIT two (different types) Thyristor in which one gate and the other drain, one drain and the other gate are connected to each other ”,“ PNP (or NPN) and {N (or P) channel junction FET, GTBT, One of SIT and BSIT}, a thyristor having its base and its drain, its collector and its gate connected to each other ”,“ an equivalent circuit of a GTO thyristor or SI thyristor ”, or“ a plurality of reverse bias voltages ” Can be controlled one by one using the positive and negative control terminals and the self-turn-off function. It can be. A reverse bias voltage larger than that of the conventional switching switching means shown in FIG. 72 can be supplied to the thyristor during off-drive.
[0070]
In each of the embodiments shown in FIGS. 74 to 79, an embodiment using “photovoltaic means paired with light emitting means such as a light emitting diode” instead of “series circuit of DC power supply and switch” is also possible. (Reference: JP-A-55-1015, JP-A-55-3259, JP-A-55-14617-20, JP-B-6-12874, JP-A-1-130666, JP-A-1-135828, (Japanese Utility Model Publication No. 4-35689, Japanese Patent Application No. 62-504785, “SI Device” published by Ohmsha)
[0071]
80 to 81 show one embodiment of the switching means of the eighth invention. In the embodiment of FIG. 81, both ends of a load (the load of this switching unit) can be short-circuited, or a power supply voltage can be applied to both ends. In the embodiment of FIG. 80, a positive voltage can be applied to both ends of a load (the load of this switching switching means) or a negative voltage can be applied. A reverse bias voltage larger than that of the conventional switching switching means shown in FIG. 73 can be supplied to each transistor during off-drive.
[0072]
Finally, the following will be supplemented.
a) The present inventor uses each switching switching means shown in FIGS. 20 to 70 of Japanese Patent Application No. 7-319464 using the switching switching means of FIG. 2 or each logic circuit in place of the conventional switching switching means. Each switching switching means using switching switching means or each logic circuit is also possible.
b) In each embodiment or each derived embodiment derived therefrom, each controllable switching means is replaced one by one with a controllable switching means (eg, a PNP transistor or the like for an NPN transistor) having a complementary relationship thereto. “Embodiment having a symmetrical relationship with respect to voltage polarity or voltage direction with respect to the original embodiment, in which the direction of each circuit configuration means (eg, DC power supply, diode, etc.) having voltage polarity or voltage direction is reversed. Is of course also possible.
[0073]
c) The control terminal and the main terminal which are paired for driving signal input of the controllable switching means are, for example, “base terminal and emitter terminal if bipolar transistor”, “junction FET, MOS • FET, GTBT, SIT "Gate terminal and source terminal", "If IGBT, gate terminal and emitter terminal", "Thyristor, SI thyristor, cathode side gate terminal and cathode terminal or anode side gate terminal and anode terminal". However, in the case of a controllable switching means having no name formed by combining a plurality of controllable switching means, the formal names of the control terminal and the main terminal are not given, but there are naturally control terminals and main terminals corresponding to the names.
d) In each embodiment or each derived embodiment derived therefrom, instead of the DC power source 1, a "combination of light emitting means and photovoltaic means" is used, and the light emitting means is caused to emit light by another power means, and the photovoltaic power The output voltage of the means may be used as the power supply voltage.
The same applies to the DC power supply 2. These are also newly derived embodiments.
[0074]
e) FIGS. 69 to 71 show ten non-controllable switching means other than the diode. Other non-controllable switching means include a PN junction, a two-terminal selenium rectifier, “a Zener diode in which a voltage higher than the Zener voltage is not applied in the Zener direction”, “GTBT or BSIT with drain and gate connected” "Reverse blocking IGBT with collector and gate connected", "Reverse blocking thyristor with anode and cathode gate connected", "Reverse blocking thyristor with anode gate and cathode connected", Non-controllable switching means disclosed in US Pat. Each embodiment (each derived embodiment) is also possible using one of these non-controllable switching means instead of each diode used in each embodiment.
[Brief description of the drawings]
FIG. 1 is a circuit diagram showing one embodiment of the first invention.
FIGS. 2 to 3 are circuit diagrams showing examples of conventional switching switching means.
4 to 15 are circuit diagrams showing one embodiment of the first invention. FIG.
16 to 17 are circuit diagrams showing an example of a series inverter circuit using the embodiment of the first invention in both figures. FIG.
FIG. 18 is a circuit diagram showing an example of a series inverter circuit using the embodiment of the first invention in both figures together with FIG. 16;
FIG. 19 is a circuit diagram showing an example of a fluorescent lamp lighting circuit using the embodiment of the first invention in FIGS.
20 is a circuit diagram showing one example of a series inverter circuit using the embodiment of the first invention in each of “FIGS. 20 and 17” and “FIGS. 20 and 18”. FIG. 19 is a circuit diagram showing an example of a fluorescent lamp lighting circuit using the embodiment of the first invention.
FIGS. 21 to 38 are circuit diagrams showing one embodiment of the second invention.
FIGS. 39 to 50 are circuit diagrams showing one embodiment of the third invention.
FIGS. 51 to 52 are circuit diagrams showing one embodiment of the fourth invention. FIG.
FIGS. 53 to 54 are circuit diagrams showing one embodiment of the ninth invention.
FIGS. 55 to 64 are circuit diagrams showing one embodiment of the fifth invention. FIG.
FIGS. 65 to 67 are circuit diagrams showing one embodiment of the sixth invention. FIG.
FIG. 68 is a circuit diagram showing an example of a power supply circuit used in each embodiment.
FIG. 69 to FIG. 71 are circuit diagrams showing a plurality of examples of non-controllable switching means other than diodes, which are constituent elements of each invention.
FIGS. 72 to 73 are circuit diagrams showing one example of conventional switching means.
FIGS. 74 to 79 are circuit diagrams showing one embodiment of the seventh invention.
80 to 81 are circuit diagrams showing one embodiment of the eighth invention one by one.
[Explanation of symbols]
SW1 to SW9 switch terminal
38, 138 load
39 Fluorescent light

Claims

There are first and second controllable switching means having a self-turn-off function. The former control terminal and main terminal which are paired for driving signal input are called control terminal ct1 and main terminal mt1, and the latter When the control terminal and the main terminal that make a pair for driving signal input are called the control terminal ct2 and the main terminal mt2,
The reverse bias voltage polarity between the control terminal ct1 and the main terminal mt1 is negative,
The reverse bias voltage polarity between the control terminal ct2 and the main terminal mt2 is positive,
First and second non-controllable switching means are connected in series from the main terminal mt1 to the main terminal mt2,
A first DC power source means and a third non-controllable switching means are connected in series from the main terminal mt1 to the control terminal ct2,
Switching switching means characterized in that the second DC power supply means and the fourth non-controllable switching means are connected in series from the control terminal ct1 to the main terminal mt2.

2. The switching switching means according to claim 1, wherein either one of the first and second DC power supply means is removed and the remaining conductors in an open state are connected to each other.

There are first and second controllable switching means having a self-turn-off function. The former control terminal and main terminal which are paired for driving signal input are called control terminal ct1 and main terminal mt1, and the latter When the control terminal and the main terminal that make a pair for driving signal input are called the control terminal ct2 and the main terminal mt2,
The reverse bias voltage polarity between the control terminal ct1 and the main terminal mt1 is negative,
The reverse bias voltage polarity between the control terminal ct2 and the main terminal mt2 is positive,
First and second non-controllable switching means are connected in series from the main terminal mt1 to the main terminal mt2,
Third and fourth non-controllable switching means are connected in series from the main terminal mt1 to the main terminal mt2,
Connecting the first DC power supply means from the control terminal ct1 toward the connection point of the third and fourth non-controllable switching means;
A switching switching means characterized in that a second DC power supply means is connected from the connection point toward the control terminal ct2.

4. The switching switching means according to claim 3, wherein either one of the first and second DC power supply means is removed and the remaining conductors in an open state are connected to each other.

There are first and second controllable switching means having a self-turn-off function. The former control terminal and main terminal which are paired for driving signal input are called control terminal ct1 and main terminal mt1, and the latter When the control terminal and the main terminal that make a pair for driving signal input are called the control terminal ct2 and the main terminal mt2,
The reverse bias voltage polarity between the control terminal ct1 and the main terminal mt1 is negative,
The reverse bias voltage polarity between the control terminal ct2 and the main terminal mt2 is positive,
First and second non-controllable switching means are connected in series from the main terminal mt1 to the main terminal mt2,
Switching switching means characterized in that the first and second DC power supply means are connected in series in the same direction from the control terminal ct1 to the control terminal ct2.

6. The switching switching means according to claim 5, wherein a series circuit of the first and second DC power supply means is combined into one.

There are first and second controllable switching means having a self-turn-off function. The former control terminal and main terminal which are paired for driving signal input are called control terminal ct1 and main terminal mt1, and the latter When the control terminal and the main terminal that make a pair for driving signal input are called the control terminal ct2 and the main terminal mt2,
The reverse bias voltage polarity between the control terminal ct1 and the main terminal mt1 is negative,
The reverse bias voltage polarity between the control terminal ct2 and the main terminal mt2 is positive,
Connect the main terminal mt1 and the main terminal mt2,
Switching switching means characterized in that the first and second DC power supply means are connected in series in the same direction from the control terminal ct1 to the control terminal ct2.

8. The switching switching means according to claim 7, wherein the series circuit of the first and second DC power supply means is combined into one.

There are first and second controllable switching means having a self-turn-off function. The former control terminal and main terminal which are paired for driving signal input are called control terminal ct1 and main terminal mt1, and the latter When the control terminal and the main terminal that make a pair for driving signal input are called the control terminal ct2 and the main terminal mt2,
The reverse bias voltage polarity between the control terminal ct1 and the main terminal mt1 is negative,
The reverse bias voltage polarity between the control terminal ct2 and the main terminal mt2 is positive,
First and second non-controllable switching means are connected in series from the main terminal mt1 to the main terminal mt2,
The first to fourth DC power supply means are connected in series in the same direction in this order from the control terminal ct1 to the control terminal ct2.
Connecting the third non-controllable switching means from the main terminal mt1 toward the connection point of the first and second DC power supply means;
Switching switching means characterized in that fourth non-controllable switching means is connected from the connection point of the third and fourth DC power supply means toward the main terminal mt2.

10. The switching switching means according to claim 9, wherein a series circuit of the second and third DC power supply means is combined into one.

The switching switching means according to claim 9 or 10, wherein the first DC power supply means is removed and the remaining conductors in an open state are connected to each other.

The switching switching means according to claim 9, 10 or 11, wherein the fourth DC power supply means is removed and the remaining conductors in an open state are connected to each other.

There are first and second controllable switching means having a self-turn-off function. The former control terminal and main terminal which are paired for driving signal input are called control terminal ct1 and main terminal mt1, and the latter When the control terminal and the main terminal that make a pair for driving signal input are called the control terminal ct2 and the main terminal mt2,
The reverse bias voltage polarity between the control terminal ct1 and the main terminal mt1 is negative,
The reverse bias voltage polarity between the control terminal ct2 and the main terminal mt2 is positive,
First and second non-controllable switching means are connected in series from the main terminal mt1 to the main terminal mt2,
First to second DC power source means are connected in series in the same direction in this order from the control terminal ct1 to the control terminal ct2.
Connecting the third non-controllable switching means from the main terminal mt1 to the control terminal ct1,
Switching switching means characterized in that a fourth non-controllable switching means is connected from the control terminal ct2 to the main terminal mt2.

14. The switching switching means according to claim 13, wherein the series circuit of the first and second DC power supply means is combined into one.

There is a controllable switching means having a self-turn-off function. The control terminal and the main terminal which are paired for inputting the first drive signal are called the control terminal ct1a and the main terminal mt1a, and the second drive signal When the control terminal and the main terminal that make a pair for input are called the control terminal ct1b and the main terminal mt1b,
The reverse bias voltage polarity between the control terminal ct1a and the main terminal mt1a is negative, the reverse bias voltage polarity between the control terminal ct1b and the main terminal mt1b is positive,
Connecting the first non-controllable switching means to the main terminal mt1a in the forward bias voltage direction between the control terminal ct1a and the main terminal mt1a;
Connecting the first DC power source means from the control terminal ct1a toward the open end of the first non-controllable switching means;
A second non-controllable switching means is connected to the main terminal mt1b in the forward bias voltage direction between the control terminal ct1b and the main terminal mt1b;
Connecting the second DC power source means from the open end of the second non-controllable switching means toward the control terminal ct1b;
A third point between “a connection point between the first non-controllable switching means and the first DC power supply means” and “a connection point between the second non-controllable switching means and the second DC power supply means”. DC power supply means and on / off switching means are connected in series,
A switching switching means comprising an on drive means for driving the controllable switching means on.

16. The switching switching means according to claim 15, wherein either one of the first and second DC power supply means is removed, and the remaining conductors in an open state are connected to each other.

There are first and second controllable switching means having a self-turn-off function. The former control terminal and both main terminals are called control terminal ct1, main terminal mt1a and main terminal mt1b, and the latter control terminal When the two main terminals are referred to as a control terminal ct2, a main terminal mt2a, and a main terminal mt2b, the control terminal ct1 and the main terminal mt1a form a pair for inputting the former drive signal, and the control terminal ct2 and the main terminal When mt2a is paired for the latter drive signal input and the reverse bias voltage polarity between the control terminal ct1 and the main terminal mt1a and between the control terminal ct2 and the main terminal mt2a is the same,
Connecting the first non-controllable switching means to the main terminal mt1a in the forward bias direction between the control terminal ct1 and the main terminal mt1a;
Connecting the first DC power source means between the control terminal ct1 and the open end of the first non-controllable switching means in the reverse bias direction between the control terminal ct1 and the main terminal mt1a;
A second non-controllable switching means is connected to the main terminal mt2a in the forward bias direction between the control terminal ct2 and the main terminal mt2a;
Connecting the second DC power source means between the control terminal ct2 and the open end of the second non-controllable switching means in the reverse bias direction between the control terminal ct2 and the main terminal mt2a;
A third DC power supply means is connected to the first DC power supply means in the same direction between the “connection point of the first non-controllable switching means and the first DC power supply means” and the main terminal mt2b. ,
The fourth DC power supply means is connected with the second DC power supply means in the same direction between "the connection point of the second non-controllable switching means and the second DC power supply means" and the main terminal mt1b. Switching switching means characterized by that.

18. The switching switching means according to claim 17, wherein the third DC power supply means is removed and the opened conducting wires are connected to each other.