JP4112686B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4112686B2
JP4112686B2 JP16136698A JP16136698A JP4112686B2 JP 4112686 B2 JP4112686 B2 JP 4112686B2 JP 16136698 A JP16136698 A JP 16136698A JP 16136698 A JP16136698 A JP 16136698A JP 4112686 B2 JP4112686 B2 JP 4112686B2
Authority
JP
Japan
Prior art keywords
film
signal
circuit
memory
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP16136698A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000019557A (ja
JP2000019557A5 (enExample
Inventor
舜平 山崎
潤 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP16136698A priority Critical patent/JP4112686B2/ja
Priority to US09/132,633 priority patent/US6667494B1/en
Priority to KR1019980033200A priority patent/KR100635085B1/ko
Publication of JP2000019557A publication Critical patent/JP2000019557A/ja
Priority to US09/540,639 priority patent/US6717179B1/en
Priority to US09/539,828 priority patent/US6670635B1/en
Priority to US09/540,357 priority patent/US6597014B1/en
Priority to US10/700,198 priority patent/US7126156B2/en
Priority to KR1020050091094A priority patent/KR100619673B1/ko
Publication of JP2000019557A5 publication Critical patent/JP2000019557A5/ja
Priority to KR1020060039894A priority patent/KR100680741B1/ko
Priority to US11/583,599 priority patent/US7750347B2/en
Application granted granted Critical
Publication of JP4112686B2 publication Critical patent/JP4112686B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP16136698A 1997-08-19 1998-05-25 半導体装置 Expired - Fee Related JP4112686B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP16136698A JP4112686B2 (ja) 1997-08-20 1998-05-25 半導体装置
US09/132,633 US6667494B1 (en) 1997-08-19 1998-08-11 Semiconductor device and semiconductor display device
KR1019980033200A KR100635085B1 (ko) 1997-08-19 1998-08-17 반도체 장치
US09/540,639 US6717179B1 (en) 1997-08-19 2000-03-31 Semiconductor device and semiconductor display device
US09/539,828 US6670635B1 (en) 1997-08-19 2000-03-31 Semiconductor device and semiconductor display device
US09/540,357 US6597014B1 (en) 1997-08-19 2000-03-31 Semiconductor device and semiconductor display device
US10/700,198 US7126156B2 (en) 1997-08-19 2003-11-03 Thin film transistor display device with integral control circuitry
KR1020050091094A KR100619673B1 (ko) 1997-08-19 2005-09-29 반도체장치
KR1020060039894A KR100680741B1 (ko) 1997-08-19 2006-05-03 반도체장치
US11/583,599 US7750347B2 (en) 1997-08-19 2006-10-19 Semiconductor device and semiconductor display device

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP24050697 1997-08-20
JP9-240506 1997-08-20
JP10-132749 1998-04-27
JP13274998 1998-04-27
JP16136698A JP4112686B2 (ja) 1997-08-20 1998-05-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2000019557A JP2000019557A (ja) 2000-01-21
JP2000019557A5 JP2000019557A5 (enExample) 2005-09-29
JP4112686B2 true JP4112686B2 (ja) 2008-07-02

Family

ID=27316574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16136698A Expired - Fee Related JP4112686B2 (ja) 1997-08-19 1998-05-25 半導体装置

Country Status (1)

Country Link
JP (1) JP4112686B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6667494B1 (en) 1997-08-19 2003-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor display device
JP3643808B2 (ja) * 2001-11-14 2005-04-27 三洋電機株式会社 半導体装置
JP4159779B2 (ja) * 2001-12-28 2008-10-01 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP4498685B2 (ja) * 2002-03-22 2010-07-07 株式会社半導体エネルギー研究所 半導体記憶素子の作製方法
US6812491B2 (en) 2002-03-22 2004-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory cell and semiconductor memory device
KR101258671B1 (ko) * 2004-02-20 2013-04-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법, ｉｃ 카드, ｉｃ 태그, ｒｆｉｄ,트랜스폰더, 지폐, 유가증권, 여권, 전자 기기, 가방 및의류
JP5062388B2 (ja) * 2004-12-10 2012-10-31 株式会社ジャパンディスプレイウェスト 表示パネル及び表示装置

Also Published As

Publication number Publication date
JP2000019557A (ja) 2000-01-21

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