JP4112527B2 - システムオンパネル型の発光装置の作製方法 - Google Patents

システムオンパネル型の発光装置の作製方法 Download PDF

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Publication number
JP4112527B2
JP4112527B2 JP2004185758A JP2004185758A JP4112527B2 JP 4112527 B2 JP4112527 B2 JP 4112527B2 JP 2004185758 A JP2004185758 A JP 2004185758A JP 2004185758 A JP2004185758 A JP 2004185758A JP 4112527 B2 JP4112527 B2 JP 4112527B2
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tft
semiconductor film
film
light
emitting device
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JP2005051211A5 (enExample
JP2005051211A (ja
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舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2004185758A 2003-07-14 2004-06-24 システムオンパネル型の発光装置の作製方法 Expired - Fee Related JP4112527B2 (ja)

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JP2004185758A JP4112527B2 (ja) 2003-07-14 2004-06-24 システムオンパネル型の発光装置の作製方法

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JP2003273872 2003-07-14
JP2004185758A JP4112527B2 (ja) 2003-07-14 2004-06-24 システムオンパネル型の発光装置の作製方法

Related Child Applications (1)

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JP2007241214A Division JP4906106B2 (ja) 2003-07-14 2007-09-18 発光装置

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JP2005051211A5 JP2005051211A5 (enExample) 2007-08-09
JP4112527B2 true JP4112527B2 (ja) 2008-07-02

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4748954B2 (ja) * 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
KR101277606B1 (ko) * 2006-03-22 2013-06-21 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US7897971B2 (en) * 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101446251B1 (ko) * 2007-08-07 2014-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 이 표시 장치를 구비한 전자기기 및 그 제조 방법
JP5395384B2 (ja) * 2007-09-07 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
TWI371223B (en) * 2008-02-20 2012-08-21 Chimei Innolux Corp Organic light emitting display device and fabrications thereof and electronic device
JP5525778B2 (ja) * 2008-08-08 2014-06-18 株式会社半導体エネルギー研究所 半導体装置
US8283667B2 (en) * 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
WO2010032425A1 (ja) 2008-09-16 2010-03-25 シャープ株式会社 半導体素子
JP5711463B2 (ja) * 2009-01-16 2015-04-30 株式会社半導体エネルギー研究所 薄膜トランジスタ
WO2012035984A1 (en) * 2010-09-15 2012-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
JP5982147B2 (ja) * 2011-04-01 2016-08-31 株式会社半導体エネルギー研究所 発光装置
KR20210068637A (ko) 2014-10-28 2021-06-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61104671A (ja) * 1984-10-29 1986-05-22 Sharp Corp 電界効果トランジスタ
JPH03222370A (ja) * 1990-01-26 1991-10-01 Mitsubishi Electric Corp 薄膜トランジスタ
JPH03233431A (ja) * 1990-02-09 1991-10-17 Hitachi Ltd 液晶ディスプレイパネル
JP3054187B2 (ja) * 1990-11-09 2000-06-19 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置の作製方法
JP2997737B2 (ja) * 1990-12-25 2000-01-11 株式会社半導体エネルギー研究所 液晶表示装置
JPH07131030A (ja) * 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
JPH10256554A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 薄膜トランジスタ及びその製造方法
JPH1197706A (ja) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH1197705A (ja) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体集積回路
JP4393662B2 (ja) * 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法

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