JP4092867B2 - Piezoelectric film and piezoelectric element provided with the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a piezoelectric film and a piezoelectric element used for an ink jet recording head or the like. In particular, the present invention relates to a columnar piezoelectric film having a large particle size in a piezoelectric film in which barium titanate (BaTiO ₃ : BT) or a part thereof is substituted with another metal atom, and a piezoelectric element using the piezoelectric film.
[0002]
[Prior art]
A piezoelectric element used as an actuator such as an ink jet recording head is an element in which a piezoelectric film exhibiting an electromechanical conversion function is sandwiched between two electrodes, and the piezoelectric film is composed of crystallized piezoelectric ceramics. Yes. As this piezoelectric ceramic, a composite oxide having a perovskite crystal structure and represented by the chemical formula ABO ₃ is known. For example, barium (Ba) is used for A, barium titanate (BT) in which a mixture of titanium (Ti) is applied to B, and strontium barium titanate (BST) in which a part of barium is replaced with strontium (Sr). ing.
[0003]
Regarding the above barium titanate and strontium barium titanate, the paper "Control of the Morphology of CSD-prepared (Ba, Sr) TiO ₃ Thin Films", Journal of the European Ceramic Society 19 (1999) pp.1339-1343, S. Hoffmann & R. Waser discloses obtaining columnar crystals by devising the precursor composition and parameters in the CSD (Chemical Solution Deposition) method.
[0004]
JP-A-7-57535 discloses a ferroelectric thin film having uniform crystal grains by forming lead zirconate titanate (PZT) in the first layer and barium titanate in the second layer. It is disclosed to form.
[0005]
[Problems to be solved by the invention]
However, barium titanate produced by the method described in the above paper by S. Hoffmann & R. Waser is a columnar crystal but has a particle size of about 50 nm to 100 nm and is not sufficiently large.
[0006]
Further, in the method described in JP-A-7-57535, lead zirconate titanate and barium titanate have different lattice constants. Therefore, lead zirconate titanate is used as a seed layer for forming barium titanate. I don't think it works enough.
[0007]
Accordingly, an object of the present invention is to obtain crystal grains having a large grain size in barium titanate used as a piezoelectric film in a piezoelectric element. Moreover, it aims at providing the manufacturing method of this piezoelectric material film and a piezoelectric element.
[0008]
[Means for Solving the Problems]
The piezoelectric film according to the present invention is a piezoelectric film composed of a complex oxide polycrystal containing at least barium and titanium, wherein the polycrystal is composed of columnar crystal grains.
[0009]
At least the lower layer side of the piezoelectric film preferably has a barium and barium substitution element / titanium molar ratio of less than 1. Thereby, a piezoelectric film having large crystal grains can be obtained and the dielectric constant of the piezoelectric film can be reduced.
[0010]
Further, the upper layer side of the piezoelectric film preferably has a barium and barium substitution element / titanium molar ratio of 1 or more and 1.2 or less. Thereby, a piezoelectric film having a close to stoichiometric ratio and good piezoelectric characteristics can be obtained.
[0011]
Moreover, it is preferable that the film thickness ratio between the lower layer side and the upper layer side is in the range of 1: 9 to 3: 7. Thereby, the dielectric constant of the entire piezoelectric film can be suppressed, and a piezoelectric film having excellent piezoelectric characteristics can be obtained.
[0012]
The piezoelectric film is preferably obtained by applying a sol containing a metal oxide constituting the piezoelectric film and carbon on a substrate and crystallizing the sol. Thereby, a good columnar crystal can be obtained.
[0013]
The composite oxide is preferably barium titanate and preferably contains at least crystal grains having a grain size of 0.4 μm or more.
[0014]
A piezoelectric element according to the present invention includes the above-described piezoelectric film, and a lower electrode and an upper electrode arranged with the piezoelectric film interposed therebetween.
[0015]
The ink jet recording head of the present invention is provided at a position corresponding to the pressure chamber of the pressure plate, a vibration plate provided on one surface of the pressure chamber, a pressure chamber substrate on which the pressure chamber is formed, And the piezoelectric element configured to be able to change the volume of the pressure chamber.
[0016]
In the method of manufacturing a piezoelectric film by the solution coating method of the present invention, barium titanate having a ratio of barium and a barium-substituted element / titanium ratio of less than 1 on a substrate or a part of barium in barium titanate is used as another element. A step of forming a substituted piezoelectric film, and a barium titanate having a barium and barium-substitution element / titanium ratio of 1 or more, or a part of barium in barium titanate replaced with another element And a step of forming a body film.
[0017]
In the above manufacturing method, the piezoelectric film is preferably manufactured by crystallization using a sol of a piezoelectric film precursor containing carbon.
[0018]
The piezoelectric element manufacturing method of the present invention includes a step of forming a lower electrode on a substrate, a step of forming the piezoelectric film on the lower electrode, and a step of forming an upper electrode on the piezoelectric film. And.
[0019]
The inkjet recording head manufacturing method of the present invention includes a step of forming a diaphragm on one surface of a substrate, a step of forming the piezoelectric element on the diaphragm, and a step of etching the substrate to form a pressure chamber. , Provided.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0021]
(Overall configuration of inkjet printer)
FIG. 1 is a perspective view illustrating the structure of a printer in which an ink jet recording head having a piezoelectric element according to this embodiment is used. In this printer, a main body 2 is provided with a tray 3, a discharge port 4, and operation buttons 9. Furthermore, an ink jet recording head 1, a supply mechanism 6, and a control circuit 8 are provided inside the main body 2.
[0022]
The ink jet recording head 1 includes a piezoelectric element manufactured by the manufacturing method of the present invention. The ink jet recording head 1 is configured to be able to eject ink from nozzles in response to the ejection signal supplied from the control circuit 8.
[0023]
The main body 2 is a housing of the printer, and a supply mechanism 6 is arranged at a position where the paper 5 can be supplied from the tray 3, and the ink jet recording head 1 is arranged so that printing can be performed on the paper 5. The tray 3 is configured to be able to supply the paper 5 before printing to the supply mechanism 6, and the discharge port 4 is an outlet for discharging the paper 5 that has been printed.
[0024]
The supply mechanism 6 includes a motor 600, rollers 601 and 602, and other mechanical structures (not shown). The motor 600 is rotatable in response to the drive signal supplied from the control circuit 8. The mechanical structure is configured so that the rotational force of the motor 600 can be transmitted to the rollers 601 and 602. The rollers 601 and 602 are rotated when the rotational force of the motor 600 is transmitted, and the paper 5 placed on the tray 3 is drawn by the rotation, and is supplied by the head 1 so as to be printable. Yes.
[0025]
The control circuit 8 includes a CPU, a ROM, a RAM, an interface circuit, and the like (not shown). The control circuit 8 supplies a drive signal to the supply mechanism 6 in correspondence with print information supplied from a computer via a connector (not shown), and discharge signals. Can be supplied to the ink jet recording head 1. In addition, the control circuit 8 can perform operation mode setting, reset processing, and the like in response to an operation signal from the operation panel 9.
[0026]
(Configuration of inkjet recording head)
FIG. 2 is an explanatory diagram of the structure of an ink jet recording head provided with the piezoelectric element of the present embodiment. As shown in the drawing, the ink jet recording head 1 includes a nozzle plate 10, a pressure chamber substrate 20, and a vibration plate 30. This head constitutes an on-demand type piezo jet head.
[0027]
The pressure chamber substrate 20 includes a cavity (pressure chamber) 21, a side wall (partition wall) 22, a reservoir 23, and a supply port 24. The cavity 21 is a space for storing ink or the like formed by etching a substrate such as silicon. The side walls 22 are formed so as to partition the cavities 21. The reservoir 23 is a flow path for filling the cavities 21 with ink in common. The supply port 24 is formed so that ink can be introduced from the reservoir 23 into each cavity 21. The shape of the cavity 21 and the like can be variously modified by an ink jet method. For example, it may be a planar Kyser shape or a cylindrical Zoltan shape. Further, the cavity may be configured for one chamber type or may be configured for two chamber types.
[0028]
The nozzle plate 10 is bonded to one surface of the pressure chamber substrate 20 so that the nozzle holes 11 are disposed at positions corresponding to the cavities 21 provided in the pressure chamber substrate 20. The pressure chamber substrate 20 to which the nozzle plate 10 is bonded is further housed in a housing 25 to constitute the ink jet recording head 1.
[0029]
The diaphragm 30 is bonded to the other surface of the pressure chamber substrate 20. The diaphragm 30 is provided with a piezoelectric element (not shown). The vibration plate 30 is provided with an ink tank port (not shown) so that ink stored in an ink tank (not shown) can be supplied into the pressure chamber substrate 20.
[0030]
(Layer structure)
FIG. 3 is a sectional view for explaining a more specific structure of the ink jet recording head and the piezoelectric element manufactured by the method of the present embodiment. This sectional view is an enlarged view of the cross section of one piezoelectric element. As shown in the figure, the diaphragm 30 is configured by laminating an insulating film 31 and a lower electrode 32, and the piezoelectric element 40 is configured by laminating a piezoelectric film layer 41, an upper electrode 42 and a lower electrode 32. Yes. In particular, the ink jet recording head 1 includes a piezoelectric element 40, a cavity 21, and nozzle holes 11 connected at a constant pitch. The pitch between the nozzles can be appropriately changed in design according to the printing accuracy. For example, they are arranged to be 400 dpi (dot per inch).
[0031]
The insulating film 31 is made of a non-conductive material, for example, silicon dioxide (SiO ₂ ) formed by thermally oxidizing a silicon substrate, and is deformed by deformation of the piezoelectric film layer, so that the pressure inside the cavity 21 is instantaneously changed. It is possible to increase it.
[0032]
Although the lower electrode 32 is formed on the insulating film 31, a titanium or titanium oxide film (adhesion layer) of about 20 nm may be formed between the insulating film 31 and the lower electrode 32.
[0033]
The lower electrode 32 is one electrode for applying a voltage to the piezoelectric film layer, and is made of a conductive material such as platinum (Pt). The lower electrode 32 is not limited to this, and may be made of iridium (Ir), which is a metal having the same FCC structure as platinum. The lower electrode 32 is formed in the same region as the insulating film 31 so as to function as an electrode common to a plurality of piezoelectric elements formed on the pressure chamber substrate 20. However, it may be formed in the same size as the piezoelectric film layer 41, that is, in the same shape as the upper electrode.
[0034]
The upper electrode 42 becomes the other electrode for applying a voltage to the piezoelectric film layer, and is made of a conductive material, for example, platinum (Pt) or iridium (Ir) with a thickness of 0.1 μm.
[0035]
The piezoelectric film layer 41 is, for example, a piezoelectric ceramic crystal having a perovskite structure manufactured by the manufacturing method of the present invention, and is formed on the diaphragm 30 in a predetermined shape.
[0036]
As the composition of the piezoelectric film layer 41, for example, a piezoelectric ceramic such as barium titanate (BaTiO ₃ : BT) is used. In addition, a part of barium constituting barium titanate such as strontium barium titanate ((Ba, Sr) TiO ₃ : BST) may be substituted with another element.
[0037]
The piezoelectric film layer 41 is composed of a polycrystalline body and is composed of columnar crystal grains. Further, at least the lower layer side of the piezoelectric film has a barium / titanium molar ratio of less than 1, and the upper layer side has a barium / titanium molar ratio of 1 to 1.2. In the case of strontium barium titanate, the molar ratio of (barium + strontium) / titanium is set to the above range. Further, it is desirable that this polycrystal body contains at least crystal grains having a grain size of 0.4 μm or more.
[0038]
(Printing operation)
A printing operation in the configuration of the ink jet recording head 1 will be described. When a drive signal is output from the control circuit 8, the supply mechanism 6 operates and the paper 5 is conveyed to a printable position by the head 1. When no discharge signal is supplied from the control circuit 8 and no voltage is applied between the lower electrode 32 and the upper electrode 42 of the piezoelectric element 40, the piezoelectric film layer 41 is not deformed. No pressure change occurs in the cavity 21 provided with the piezoelectric element 40 to which no ejection signal is supplied, and no ink droplet is ejected from the nozzle hole 11.
[0039]
On the other hand, when a discharge voltage is supplied from the control circuit 8 and a constant voltage is applied between the lower electrode 32 and the upper electrode 42 of the piezoelectric element 40, the piezoelectric film layer 41 is deformed. In the cavity 21 where the piezoelectric element 40 to which the discharge signal is supplied is provided, the vibration plate 30 is greatly bent. For this reason, the pressure in the cavity 21 increases instantaneously, and ink droplets are ejected from the nozzle holes 11. Arbitrary characters and figures can be printed by individually supplying ejection signals to the piezoelectric elements at the positions to be printed in the head.
[0040]
(Production method)
Next, the manufacturing method of the piezoelectric element according to this embodiment will be described together with the manufacturing method of the ink jet recording head. 4 and 5 are cross-sectional views of the manufacturing process of the piezoelectric element and the ink jet recording head according to the present embodiment.
[0041]
Insulating film forming step (S1)
The insulating film forming step is a step of forming the insulating film 31 on the silicon substrate 20. The thickness of the silicon substrate 20 is, for example, about 200 μm so that the height of the side wall does not become too high. The insulating film 31 is formed to a thickness of about 1 μm, for example. A silicon dioxide film is formed by using a known thermal oxidation method or the like for manufacturing the insulating film. Note that a titanium film or a titanium oxide film (adhesion layer: not shown) having a thickness of preferably 5 nm to 40 nm, more preferably about 20 nm may be further formed on the insulating film 31. This adhesion layer improves the adhesion between the insulating film 31 and the lower electrode 32.
[0042]
Lower electrode forming step (S2)
This lower electrode forming step is a step of forming the lower electrode 32 on the insulating film 31 or the adhesion layer. The lower electrode 32 is formed by laminating platinum or iridium with a thickness of 200 nm, for example. These layers are manufactured using a known electron beam evaporation method, sputtering method, or the like.
[0043]
Furthermore, a titanium (Ti) seed layer is preferably formed on the platinum film with a thickness of 3 nm to 25 nm, more preferably 5 nm. For example, a known DC sputtering method is used for forming the titanium seed layer. This seed layer is formed with a uniform thickness, but may be an island shape in some cases.
[0044]
Formation of piezoelectric precursor film first layer (S3)
Next, a first layer 411 ′ of a piezoelectric precursor film is formed on the lower electrode 32. The piezoelectric precursor film is configured as an amorphous film before being crystallized by the processing described later to become the piezoelectric film 41. In this embodiment, a barium titanate precursor film is formed by a sol-gel method. The film formation method of barium titanate is not limited to the sol-gel method, and any solution coating method such as a MOD (Metal-Organic Decomposition) method may be used.
[0045]
In the sol-gel method, a metal organic compound such as a metal alkoxide is hydrolyzed and polycondensed in a solution system. Specifically, first, a solution (sol) containing a metal organic compound is applied on a substrate and dried (S3). Examples of the metal organic compound used include alkoxides such as methoxides, ethoxides, propoxides, and butoxides that constitute inorganic oxides, and acetate compounds. Inorganic salts such as nitrates, oxalates and perchlorates may be used.
[0046]
In particular, the molar ratio of barium / titanium is preferably less than 1. Thereby, the grain size of the crystal grains constituting the first layer 411 of the piezoelectric film can be increased, and the dielectric constant can also be decreased. For example, here, the barium / titanium molar ratio is 0.9.
[0047]
Moreover, it is preferable that carbon is contained in sol. By containing carbon, crystallization in directions other than a specific direction can be suppressed and columnar crystal grains can be easily obtained. In this embodiment, a mixed solution (sol) of barium hydroxide, titanium isopropoxide, and isoamyl acetate is prepared as a starting material for barium titanate.
[0048]
This mixed solution is applied on the lower electrode to a thickness of 20 nm, for example. At the stage of application, each metal atom constituting BT is dispersed as an organometallic complex.
[0049]
After application, the sol solvent is evaporated by drying at a constant temperature for a certain time. For example, the drying temperature is set to, for example, 150 ° C. or more and 200 ° C. or less. Preferably, it is dried at 180 ° C. The drying time is, for example, 5 minutes or more and 15 minutes or less. Preferably, it is dried for about 10 minutes.
[0050]
After drying, it is further degreased for a certain period of time at a certain degreasing temperature in an air atmosphere. The degreasing temperature is preferably in the range of 400 ° C to 600 ° C. This is because crystallization starts at a temperature higher than this range, and sufficient degreasing cannot be performed at a temperature lower than this range. Preferably, it is set to about 450 ° C. to 550 ° C. The degreasing time is, for example, 5 minutes or more and 90 minutes or less. This is because crystallization starts in a time longer than this range, and degreasing is not sufficient in a time shorter than this range. Preferably, degreasing is performed for about 10 minutes. The organic matter coordinated to the metal by degreasing dissociates from the metal, causes an oxidative combustion reaction, and is scattered in the atmosphere. Through the above steps, the first layer 411 ′ of the piezoelectric precursor film is formed.
[0051]
Crystallization step (S4)
The first layer 411 ′ of the piezoelectric precursor film obtained by the above process is crystallized by heat treatment to form the first layer 411 of the piezoelectric film. Although the sintering temperature varies depending on the material, in this embodiment, heating is performed at 650 ° C. for 5 to 30 minutes. As the heating device, an RTA (Rapid Thermal Annealing) device, a diffusion furnace, or the like can be used.
[0052]
By this crystallization, the first layer 411 of the piezoelectric film is formed. In this embodiment, the first layer 411 of the piezoelectric film is formed by performing the sol coating, drying, degreasing, and crystallization processes once. However, the first layer 411 is not limited to this, and is repeated twice or more times. Also good.
[0053]
Lamination of piezoelectric film (S5 to S7)
Next, a second layer 412 ′ of the piezoelectric precursor film is formed (S5). At this time, the barium / titanium molar ratio of the applied sol is preferably 1 or more and 1.2 or less. In particular, the barium / titanium molar ratio is preferably close to 1. As a result, a piezoelectric film close to the stoichiometric ratio and excellent in piezoelectric characteristics can be formed. For example, here, the barium / titanium molar ratio is 1.05.
[0054]
The thickness of 412 ′ of the second layer of the piezoelectric precursor film is preferably 50 nm or less in order to obtain good columnar crystal grains. In addition, it is necessary to set it as 20 nm or less under the conditions where carbon is not contained in the sol.
[0055]
Next, crystallization is performed in the same manner as described above to form the piezoelectric film second layer 412 (S6). By repeating the process of forming and crystallizing the precursor film a predetermined number of times, the piezoelectric film second layer 412 can be further thickened (S7). The piezoelectric film second layer 412 formed in this way has a large grain size and columnar crystal grains in order to grow crystals on the first layer 411. For example, the maximum particle size is 0.4 μm.
[0056]
The ratio of the film thickness of the piezoelectric film first layer 411 and the film thickness of the piezoelectric film second layer 412 is, for example, 1: 9 to 3: 7 so that the high dielectric constant can be suppressed and the piezoelectric characteristics can be maintained. It is preferable to be between. Increasing the film thickness ratio of the first piezoelectric film can lower the dielectric constant of the entire piezoelectric film, and increasing the film thickness ratio of the second piezoelectric film improves the piezoelectric characteristics of the entire piezoelectric film. Can be made. For example, here, the ratio of the thickness of the first layer 411 to the thickness of the second layer 412 is 2: 8.
[0057]
Upper electrode formation process (FIG. 5: S8)
The upper electrode 42 is formed on the piezoelectric film 41 formed as described above. Specifically, platinum (Pt), iridium (Ir), or other metal is formed as the upper electrode 42 to a thickness of 100 nm by DC sputtering.
[0058]
Formation of piezoelectric element (S9)
Next, after spin-coating a resist on the upper electrode 42, patterning is performed by exposure and development in accordance with the position where the ink chamber is to be formed. The upper electrode 42 and the piezoelectric film 41 are etched by ion milling or the like using the remaining resist as a mask. Through the above steps, a piezoelectric actuator that is an example of a piezoelectric element is formed.
[0059]
Inkjet recording head formation (S10, S11)
Further, the ink chamber 21 is formed on the ink chamber substrate 20, and the nozzle plate 10 is formed. Specifically, an etching mask is applied to the ink chamber substrate 20 in accordance with the position where the ink chamber is to be formed, and predetermined by dry etching using an active gas such as parallel plate type reactive ion etching. The ink chamber substrate 20 is etched to the depth to form the ink chamber 21. The portion remaining without being etched becomes the side wall 22.
[0060]
Finally, the nozzle plate 10 is bonded to the ink chamber substrate 20 using resin or the like. When the nozzle plate 10 is joined to the ink chamber substrate 20, the nozzles 11 are aligned so as to be arranged corresponding to the respective spaces in the ink chamber 21. Through the above steps, an ink jet recording head is formed.
[0061]
(Other variations)
The piezoelectric element manufactured by the present invention is applicable not only to the pressure generation source of the ink jet recording head but also to the piezoelectric element device such as a piezoelectric fan, an ultrasonic motor, and an ultrasonic vibrator, and the manufacture of such a device. be able to.
[0062]
【The invention's effect】
According to the present invention, by obtaining crystal grains having a large grain size, it is possible to provide a piezoelectric film excellent in piezoelectric characteristics and a piezoelectric element using the piezoelectric film. Further, since the dielectric constant of the entire piezoelectric film can be lowered due to the influence of the piezoelectric film first layer, the capacity of the entire piezoelectric element can be reduced, and a suitable piezoelectric body when driving with a rectangular wave. An element can be provided.
[0063]
Moreover, according to the present invention, it is possible to provide a method for manufacturing the piezoelectric film and the piezoelectric element as described above.
[Brief description of the drawings]
FIG. 1 is a perspective view illustrating the structure of a printer in which an ink jet recording head having a piezoelectric element according to an embodiment is used.
FIG. 2 is an explanatory diagram of the structure of an ink jet recording head having the piezoelectric element of the present embodiment.
FIG. 3 is a cross-sectional view illustrating a specific structure of an ink jet recording head and a piezoelectric element according to the present invention.
FIG. 4 is a cross-sectional view of a manufacturing process of the piezoelectric element according to the present embodiment.
FIG. 5 is a manufacturing process cross-sectional view illustrating the method for manufacturing the piezoelectric element and the ink jet recording head according to the present embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Nozzle plate, 20 ... Pressure chamber board | substrate, 30 ... Vibrating plate, 31 ... Insulating film, 32 ... Lower electrode, 40 ... Piezoelectric element, 41 ... Piezoelectric film layer, 42 ... Upper electrode, 21 ... Cavity

Claims (10)

In the piezoelectric film composed of a complex oxide polycrystal including at least barium and titanium, the polycrystal is composed of columnar crystal grains ,
At least the lower layer side of the piezoelectric film has a barium and barium substitution element / titanium molar ratio of less than 1,
The piezoelectric film, wherein the upper layer side of the piezoelectric film has a barium and barium substitution element / titanium molar ratio of 1 to 1.2 . In claim 1 ,
The piezoelectric film according to claim 1, wherein a ratio of a film thickness between the lower layer side and the upper layer side is in a range of 1: 9 to 3: 7. In claim 1 or claim 2 ,
A piezoelectric film characterized in that a sol containing a metal oxide constituting a piezoelectric film and carbon is applied on a substrate and crystallized. In any one of Claims 1 thru | or 3 ,
The composite film is barium titanate and includes at least crystal grains having a grain size of 0.4 μm or more. A piezoelectric film according to any one of claims 1 to 4, the piezoelectric element characterized in that a lower electrode and an upper electrode are arranged to sandwich the piezoelectric film. In an ink jet recording head comprising the piezoelectric element according to claim 5 ,
A pressure chamber substrate on which the pressure chamber is formed;
A diaphragm provided on one surface of the pressure chamber;
An ink jet recording head comprising: the piezoelectric element provided at a position corresponding to the pressure chamber of the vibration plate and configured to be capable of changing a volume of the pressure chamber. A method of manufacturing a piezoelectric film having columnar crystal grains by a solution coating method,
Forming a piezoelectric film in which barium and barium titanate having a molar ratio of barium and a barium-substituted element / titanium of less than 1 or a part of barium in barium titanate is substituted with another element on a substrate;
A step of forming a piezoelectric film in which barium and barium titanate having a barium / barium substitution element / titanium molar ratio of 1 or more and 1.2 or less and a part of barium in barium titanate are substituted with other elements And a method of manufacturing a piezoelectric film. In claim 7 ,
The method of manufacturing a piezoelectric film, wherein the piezoelectric film is manufactured by crystallizing a sol of a piezoelectric film precursor containing carbon. A method for manufacturing a piezoelectric element comprising a piezoelectric film manufactured by the manufacturing method according to claim 8 , comprising:
Forming a lower electrode on the substrate;
Forming the piezoelectric film on the lower electrode;
And a step of forming an upper electrode on the piezoelectric film. A method for manufacturing an ink jet recording head comprising the piezoelectric element manufactured by the manufacturing method according to claim 9 ,
Forming a diaphragm on one surface of the substrate;
Forming the piezoelectric element on the diaphragm;
And a step of etching the substrate to form a pressure chamber.

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