JP4090410B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device, and more particularly to a power semiconductor module applied to a power converter such as a switching power supply device.

In mounting a semiconductor device constituting a power semiconductor module, an “electrode extraction structure” is required to realize desired electrical contact with each electrode. Conventionally, such an electrode extraction structure of a semiconductor device has been realized by connecting an electrode of the semiconductor device to an extraction electrode provided separately by wire bonding (see, for example, Patent Document 1).
JP 2002-368192 A JP-A-9-232513 Japanese Patent Laid-Open No. 10-93017

  However, in the electrode lead-out structure by wire bonding, the current capacity for each wire is limited, so that the number of wires required increases when the semiconductor device is applied to a power converter that handles a relatively large current. As a result, the arrangement space of the semiconductor device increases, and the workability of the mounting decreases.

  In addition, regarding the control electrode of the semiconductor device (transistor), since it is necessary to input a signal for controlling the operation of the semiconductor device, it is desirable to efficiently provide a structure for taking out the semiconductor device.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor device having an electrode extraction structure that can reduce the arrangement space and improve the workability of mounting. It is to be.

  A semiconductor device according to the present invention includes first and second electrodes, a conductive electrode plate, an insulating coating, and a conductor. The electrode plate has a portion that is electrically connected to the first electrode. The insulating coating is formed on at least a part of the surface of the electrode plate excluding the connection portion with the first electrode. The conductor is formed on the surface of the insulating coating, is insulated from the electrode plate by the insulating coating, and is electrically connected to the second electrode.

  Preferably, the conductor is formed of a conductive film.

  Preferably, in the electrode plate, the insulating coating and the conductor are provided not only on the surface opposite to the connection portion with the first electrode but also on the same surface side as the connection portion, and the second electrode is on the same surface. It is electrically connected to a conductor provided on the side.

  Alternatively, preferably, in the electrode plate, the intermediate portion provided between the connection portion with the first electrode and the contact portion in contact with the second electrode via the conductor is the first and second electrodes. The distance from the arrangement surface is secured to be longer than the distance between the connection portion and the contact portion and the arrangement surface.

  Preferably, in the electrode plate, the insulating film and the conductor are provided only on the side opposite to the connection portion with the first electrode, and the semiconductor device electrically connects the conductor and the second electrode. The apparatus further includes a coupling portion for coupling.

  More preferably, the coupling portion is configured by wire bonding.

  Alternatively, preferably, the electrode plate is manufactured in a state in which the insulating film and the conductor are provided only on the side opposite to the connection portion with the first electrode, and the first and second electrodes are connected to the first electrode. The conductor formed in the portion arranged on the same surface side as that of the connection portion and located on the same surface side by bending the end portion of the electrode plate is electrically connected to the second electrode. The

  Preferably, the second electrode is a control electrode, and a signal line for electrically connecting a drive circuit for generating an electric signal for driving the control electrode and the control electrode is provided on the conductor.

  Alternatively, preferably, the first and second electrodes are arranged along the horizontal direction, and the electrode plate includes a first portion formed along the horizontal direction and a second portion formed along the vertical direction. The second portion is electrically connected to an element other than the semiconductor device.

  More preferably, the semiconductor device further includes a coupling portion, and the coupling portion electrically connects the region formed on the surface of the second portion of the conductor and the control circuit board.

  In particular, the semiconductor device is used as a switching element of a power converter.

  Therefore, in the semiconductor device according to the present invention, electrical contact to the first electrode (for example, the emitter electrode) is ensured by the electrode plate without using a bonding wire, so that the arrangement space of the semiconductor device can be reduced and the workability of the connection can be reduced. Improvements can be realized. Furthermore, since the electrical contact with the second electrode (for example, the gate electrode) can be integrally secured by the conductor formed on the electrode plate via the insulating coating, the electrode take-out structure can be further reduced and the device can be obtained. Contributes to overall miniaturization.

  Further, by forming the conductor with a conductive film, the electrode lead-out structure can be further saved.

  In particular, by providing an electrode extraction structure in which an insulating coating and a conductor are formed only on the side opposite to the connection portion of the electrode plate by further providing a coupling portion, the shape of the electrode plate is simplified and its creation is easy In addition, since the insulating film and the conductor 90 can be easily formed, the manufacturing cost can be reduced.

  Alternatively, by forming an electrode extraction structure that secures a contact portion with the second electrode by bending the end portion of the electrode plate, the shape of the electrode plate is simplified to facilitate its creation, and the insulating coating and the conductive layer Since the forming operation of the body 90 can be easily performed, the manufacturing cost can be reduced.

  Further, by providing a signal line on the conductor for electrically connecting the control electrode drive circuit and the control electrode, the drive signal for the control electrode can be transmitted without providing a signal terminal group for relaying. Can do.

  Alternatively, by providing a vertical portion on the electrode plate, the first electrode (for example, the emitter electrode) can be easily connected to the outside of the semiconductor device.

  Furthermore, by further providing a coupling portion that electrically connects the region formed on the surface of the vertical portion of the conductor to the control circuit board, a signal group transmitted and received between the semiconductor device and the outside thereof can be obtained. It can be transmitted efficiently.

  In particular, the electrode extraction structure of the semiconductor device according to the present invention is suitable for a switching element of a power converter.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, about the same or equivalent part in a figure, the same code | symbol is attached | subjected and the description is not repeated.

[Embodiment 1]
FIG. 1 is a diagram showing a configuration example of a power converter to which a semiconductor device according to the present invention is applied.

  Referring to FIG. 1, power converter 10 converts a DC voltage supplied from battery 20 into an AC voltage in accordance with an instruction from control device 40, and drives and controls AC motor 30 that is a load. In the example of FIG. 1, the AC motor 30 is a three-phase motor.

  The battery 20 includes a secondary battery such as nickel hydride or lithium ion, a fuel cell, or the like. The positive side of the battery 20 is connected to the power line 11 and the negative side is connected to the ground line 12 and grounded.

The power converter 10 includes a smoothing capacitor 14, switching elements Q1 to Q6 constituting a three-phase inverter, a switching control circuit 15, a current detector 16, and gate driving provided corresponding to the switching elements Q1 to Q6, respectively. Circuits GD1 to GD6. For the switching elements Q1 to Q6, a power semiconductor element typified by an IGBT (Insulated Gate Bipolar Transistor) is applied. Each of switching elements Q1 to Q6 corresponds to a semiconductor device according to the present invention and has an electrode extraction structure described below.

  Switching element Q1 is connected between power supply line 11 and node 17U, and switching element Q2 is connected between node 17U and ground line 12. Switching elements Q1, Q2 connected in series constitute a U-phase arm.

  Switching element Q3 is connected between power supply line 11 and node 17V, and switching element Q4 is connected between node 17V and ground line 12. Switching elements Q3 and Q4 connected in series constitute a V-phase arm.

  Switching element Q5 is connected between power supply line 11 and node 17W, and switching element Q6 is connected between node 17W and ground line 12. Switching elements Q5 and Q6 connected in series constitute a W-phase arm.

  Furthermore, diodes D1 to D6 for flowing current from the emitter side to the collector side are connected between the collector and emitter of each switching element Q1 to Q6.

  In the following description, among the switching elements Q1 to Q6, the switching elements Q1, Q3, Q5 connected to the power supply line 11 are also collectively referred to as “upper arm element QU”, and the switching elements Q2, Q2 connected to the earth line 12 Q4 and Q6 are also collectively referred to as “lower arm element QD”.

  The current detector 16 detects passing currents of the nodes 17U, 17V, and 17W, that is, phase currents iu, iv, and iw. Nodes 17U, 17V, and 17W are electrically connected to respective phase coils (not shown) of AC motor 30.

  Control device 40 instructs on / off timing of switching elements Q1 to Q6 based on a motor command value from the outside of power converter 10, phase currents iu, iv, iw and the like detected by current detection unit 16. Generate a control signal.

  The switching control circuit 15 generates gate signals S1 to S6 for turning on / off the switching elements Q1 to Q6 in accordance with a control signal from the control device 40. Gate drive circuits GD1 to GD6 drive the gates of switching elements Q1 to Q6 in response to gate signals S1 to S6 from switching control circuit 15, respectively. As the gate drive circuits GD1 to GD6, a general integrated circuit (IC) is used.

  Thereby, the AC voltage generated by the switching control of the switching elements Q1 to Q6 is applied to the AC motor 30, and the AC motor 30 is driven to generate the torque specified by the torque command value Tref according to the motor command value. Is done.

  Hereinafter, an electrode extraction structure in the semiconductor device according to the present invention will be described. First, for comparison, a comparative example in which the electrode extraction structure for the switching elements Q1 to Q6 shown in FIG. Will be described with reference to FIG.

  FIG. 2 shows a planar layout of each phase according to the comparative example of the three-phase inverter portion shown in FIG.

  Referring to FIG. 2, the collector electrode (not shown) of upper arm element QU is electrically connected to conductor 75. The conductor 75 is coupled to the positive electrode conductor 51 electrically connected to the power supply line 11 by wire bonding by the wire 200. Similarly, the emitter electrode (not shown) of the upper arm element QU is coupled to the conductor 70 by the wire 201 by wire bonding.

  A base electrode (not shown) of the upper arm element QU is coupled to a gate signal terminal in the signal terminal group 65 by a wire 202 by wire bonding. The signal terminal group 65 includes a temperature detection terminal and a current detection terminal in addition to the gate signal terminal. These temperature detection terminal and current detection terminal are also coupled to a predetermined terminal (not shown) of the upper arm element QU by a wire 202 by wire bonding.

  The conductor 70 is coupled by wire bonding to the output conductor 53 electrically connected to the node 17 (generally showing the nodes 17U, 17V, and 17W in FIG. 1) and the wire 203.

  The collector electrode (not shown) of the lower arm element QD is connected to the conductor 70, and the emitter electrode (not shown) is wire-bonded by the negative electrode conductor 52 electrically connected to the earth line 12 and the wire 204. Combined with

  A base electrode (not shown) and a predetermined terminal of the lower arm element QD are coupled to a signal terminal group 66 including a gate signal terminal, a temperature detection terminal, and a current detection terminal by a wire 205 by wire bonding.

  3 shows a PQ cross-sectional view in FIG.

  Referring to FIG. 3, positive electrode conductor 51 is insulated from case 60 by insulating member 61. The positive electrode conductor 51 has a bent plate shape, and includes a portion coupled by the conductor 75 and the wire 200 and a portion taken out to be electrically connected to the power supply line 11.

  Similarly, the negative electrode conductor 52 is insulated from the case 60 by the insulating member 62. The negative electrode conductor 52 has the same shape as the positive electrode conductor 51, and includes a portion that is wire-bonded by the wire 204 and a portion that is taken out to be electrically connected to the ground line 12. Although not shown, the output conductor 53 also has a shape similar to that of the positive electrode conductor 51 and the negative electrode conductor 52, and includes a portion that is wire-bonded and a portion that is taken out upward.

  In this manner, an electrode extraction structure for each switching element arranged on the case 60 is realized by wire bonding.

  FIG. 4 shows an overall planar layout of the three-phase inverter portion shown in FIG. That is, the layout shown in FIG. 4 is obtained by arranging the three-phase parallel layouts of the phases shown in FIG.

  Referring to FIG. 4, in U phase, positive electrode conductor 51U, negative electrode conductor 52U and output conductor 53U are provided for switching element Q1 which is the upper arm element and switching element Q2 which is the lower arm element, The connection relationship shown in FIG. 1 is realized by wire bonding using the wires 200U to 205U.

Similarly, in the V phase, a positive conductor 51V, a negative conductor 52V, and an output conductor 53V are provided for the switching element Q3 that is the upper arm element and the switching element Q4 that is the lower arm element, and in the W phase, A positive conductor 51W, a negative conductor 52W, and an output conductor 53W are provided for the switching element Q5 that is the upper arm element and the switching element Q6 that is the lower arm element. Further, wire 200V～205V, by wire Bonn Dinh grayed by 200W～205W, the connection relationship shown in FIG. 1 is achieved.

  As described above, in the electrode extraction structure by wire bonding, when applied to a three-phase inverter having a relatively large current capacity, the number of wires increases, the arrangement space of the switching element (semiconductor device) increases, Workability is reduced.

  FIG. 5 is a diagram for explaining a planar layout of the electrode lead-out structure of the semiconductor device according to the first embodiment of the present invention.

  Referring to FIG. 5, in the first embodiment, plate-shaped extraction electrode plates 100 and 100 # are provided in place of bonding wires, corresponding to upper arm element QU and lower arm element QD, respectively. On the surfaces of electrode plates 100 and 100 #, conductive films 90 and 90 # on which a pattern of wiring group 95 is formed in advance are formed, respectively.

  2, the arrangement direction is reversed left and right, but the positive electrode conductor 51, the negative electrode conductor 52, and the output conductor 53 are provided in order to obtain electrical contact with the outside of the case 60. The collector electrodes (not shown) of lower arm element QD and upper arm element QU are connected to conductors 70 and 75, respectively.

  The conductor 70 is electrically connected to the output conductor 53 by soldering or the like without using a bonding wire. Similarly, the conductor 75 is electrically connected to the positive electrode conductor 51 by soldering or the like without using a bonding wire.

  Next, the electrode plate 100 will be described in detail with reference to FIG. 6 which is a cross-sectional view taken along line AB in FIG.

  Referring to FIG. 6, case 60 for storing power converter 10 is made of aluminum or the like having high heat conductivity. Case 60 is formed with at least one cooling path 60 # through which a cooling medium such as water passes.

  An insulating resin layer 71 having high thermal conductivity is provided on the upper surface of the case 60, and a conductor 75 is formed on the insulating resin layer 71 with a conductive material (typically metal). A collector electrode (not shown) of the upper arm element QU is connected to the conductor 75 by soldering or the like. As shown in FIG. 5, since the conductor 75 is electrically connected to the positive electrode conductor 51, the collector electrode of the upper arm element QU is electrically connected to the power supply line 11.

  The electrode plate 100 has a bent shape, and includes a horizontal portion 101 formed in the horizontal direction and a vertical portion 102 formed in the vertical direction.

  The emitter electrode Qe and the gate electrode Qg of the upper arm element QU are located on the lower surface side of the horizontal portion 101. In the connection portion 103 on the lower surface side of the horizontal portion 101, the electrode plate 100 is electrically connected to the emitter electrode Qe by soldering or the like.

  On the other hand, an insulating film 80 is formed on at least a part of the surface of the electrode plate 100 excluding the connection portion 103. In the first embodiment, insulating film 80 is formed on the surface of contact portion 104 in contact with gate electrode Qg on the upper surface side of horizontal portion 101 and vertical portion 102 and on the lower surface side of horizontal portion 101.

  A conductive film 90 made of a conductive material is further formed on the surface of the insulating coating 80.

  A wiring group 95 for transmitting gate signals S1 to S6, a temperature detection signal, and a current detection signal to be input / output between the signal terminal groups 55 and 56 in FIG. The wiring pattern which comprises is previously provided. As the conductive film 90, for example, a copper foil having the wiring pattern formed on the upper surface can be used.

  The conductive film 90 formed on the surface of the contact portion 140 is electrically connected to the gate electrode Qg by soldering or the like.

  Further, on the upper surface side of the vertical portion 102, a gate drive circuit GD (generically referring to the gate drive circuits GD1 to GD6 shown in FIG. 1) is disposed on the conductive film 90. The gate drive circuit GD can be electrically contacted with the gate electrode Qg through a wiring group 95 formed in advance on the conductive film 90.

  As described above, the gate signals S1 to S6, the temperature detection signal, and the current detection signal are transmitted to the outside of the switching element without providing the signal terminal groups 65 and 66 for relay as in the comparative example shown in FIGS. Can be exchanged between.

  Further, the portions 105 and 106 of the horizontal portion 101 that are not connected to the emitter electrode Qe and the gate electrode Qg have a distance from the arrangement surface of the emitter electrode Qe and the gate electrode Qg, and the connection portion 103 and the contact portion 104 to the arrangement surface. It has a shape that becomes longer than the distance between.

  For example, the parts 105 and 106 are provided by bending the horizontal part 101 into a convex shape. Thereby, insulation can be improved about the part which is not connected with an electrode. Moreover, the workability | operativity at the time of electrode connection of a switching element can be improved.

  The insulating coating 80 can be formed by spraying an insulating material onto the surface of the region where the conductive film 90 is provided in a state where the electrode plate 100 is processed into the shape as described above. Furthermore, before the insulating film 80 is completely dried, a copper foil for forming the conductive film 90 is attached, and the solder foil is overlaid and reflowed in accordance with the place to be soldered, whereby the electrode plate 100 is produced. And connection work can be performed.

  The emitter electrode Qe of the upper arm element QU is taken out by the vertical portion 102 of the electrode plate 100 and can be electrically connected to other parts. Thereby, the emitter electrode Qe can be easily connected to the outside of the switching element (semiconductor device). Further, without providing the output conductor 53, the vertical portion 102 may be further extended so as to be directly connected to the circuit portion outside the case 60.

  Although not shown, the vertical portion 102 of the upper arm element QU is also electrically connected to the conductor 70 shown in FIG. 5 without using a bonding wire.

  Electrode plate 100 # corresponding to lower arm element QD also has the same structure as electrode plate 100 shown in FIG. In the lower arm element QD, the emitter electrode (not shown) is electrically connected to the conductor 70 by soldering or the like, and the collector electrode (not shown) is electrically connected to the ground line 12 by soldering or the like. Connected.

  Therefore, in electrode plate 100 # corresponding to lower arm element QD, conductor 75 in the structure of FIG. Further, the vertical portion 102 is electrically connected to the negative electrode conductor 52 shown in FIG. 5 by soldering or the like without using a bonding wire. On the other hand, the gate electrode extraction structure is the same as that shown in FIG.

  Thus, in the electrode lead-out structure according to the first embodiment, electrical contact to the electrodes (emitter electrodes) of switching elements Q1 to Q6 is ensured by taking-out electrode plates 100 and 100 # without using bonding wires. Therefore, even when applied to a three-phase inverter having a relatively large current capacity, an increase in arrangement space of switching elements (semiconductor devices) and a reduction in connection workability can be avoided.

  Further, the conductive film laminated on the extraction electrode plates 100 and 100 # secures electrical contact to the gate electrodes (control electrodes) of the switching elements Q1 to Q6, thereby reducing the space for the electrode extraction structure. This can contribute to the miniaturization of the entire device.

  In particular, by forming the wiring pattern 95 on the conductive film 90, electrical contact to the gate electrode (control electrode) and the output terminal of a predetermined signal can be efficiently provided.

[Embodiment 2]
FIG. 7 is a diagram for explaining an electrode lead-out structure of a semiconductor device according to the second embodiment of the present invention.

  Referring to FIG. 7, the electrode plate 200 according to the second embodiment is compared with the electrode plate 100 shown in FIG. 6, in the horizontal portion 101, the portion ahead of the connection portion 103, that is, the gate electrode Qg. The difference is that the contact portion 104 and the intermediate portion 105 are omitted. Therefore, electrode plate 200 has a simpler shape than electrode plate 100 according to the first embodiment.

  In the electrode plate 200, the insulating film 80 and the conductive film 90 are provided only on the side opposite to the connection portion 103 with the emitter electrode Qe, that is, on the upper surface side of the horizontal portion 101 and the vertical portion 102. Thereby, in the electrode plate 200, the operation of forming the insulating film 80 and the conductive film 90 can be easily performed as compared with the electrode plate 100 according to the first embodiment.

  Further, a coupling portion 210 for electrically connecting the conductive film 90 and the gate electrode Qg is provided. Coupling unit 210 is formed of, for example, a bonding wire and transmits gate signals S1 to S6. More specifically, the coupling part 210 needs to connect the gate signal wiring in the wiring group 95 formed on the conductive film 90 to the gate electrode Qg. Since the gate of the IGBT is voltage-driven, the current flowing through the coupling unit 210 is small, and it is not necessary to provide a large number of wires as the coupling unit 210 even in a large capacity three-phase inverter.

  Except for the shape change of the electrode plate 200 and the addition of the coupling portion 210, the electrode extraction structure according to the second embodiment is the same as that of the first embodiment. Therefore, the electrode extraction structure according to the second embodiment can obtain the same effect as the electrode extraction structure according to the first embodiment by simplifying the shape of the electrode plate. Thereby, since an electrode plate can be produced easily, it is possible to reduce the manufacturing cost.

[Embodiment 3]
FIG. 8 is a second diagram illustrating an electrode take-out structure of a semiconductor device according to the third embodiment of the present invention.

  Referring to FIG. 8, the electrode plate 300 according to the third embodiment is compared with the electrode plate 100 shown in FIG. Bending the end 107 is different in that the contact portion 104 in contact with the gate electrode Qg is formed. That is, the electrode plate 300 has a simpler shape than the electrode plate 100 according to the first embodiment.

  Therefore, in a state before the end portion 107 is bent, the insulating film 80 and the conductive film 90 are provided only on the side opposite to the connection portion 103 with the emitter electrode Qe, that is, only on the upper surface side of the horizontal portion 101 and the vertical portion 102. . Thereby, in the electrode plate 300, the insulating film 80 and the conductive film 90 can be formed more easily than the electrode plate 100 according to the first embodiment.

  Except for the shape of the electrode plate 300, the electrode lead-out structure according to the third embodiment is the same as that of the first embodiment. Therefore, the electrode take-out structure according to the third embodiment obtains the same effect as the electrode take-out structure according to the first embodiment, and the electrode plate can be easily manufactured, so that the manufacturing cost can be reduced.

  Further, by further providing a coupling portion 91 for electrically connecting the conductive film 90 formed on the surface of the vertical portion 102 and the control circuit substrate 110, a signal from the switching element can be taken out more easily. Is possible. On the control circuit board 110, for example, the switching control circuit 15 shown in FIG. 1 and the circuit elements of the control device 40 are arranged.

  With such a configuration, the gate signals S1 to S6, the temperature detection signal, the current detection signal, and the like exchanged between the switching element and the outside thereof are sent to the switching control circuit 15 and the control device 40. It can be transmitted efficiently. Control circuit board 110 and coupling portion 91 can be similarly arranged in the electrode lead-out structure according to the first and second embodiments.

  In the embodiment of the present invention, a switching element used for an inverter that performs DC-AC conversion using a three-phase motor as a load is shown as a representative example of a semiconductor device. However, the present invention is applied in such a case. It is not limited to. That is, the present invention can be commonly applied to semiconductor devices used as switching elements in various power converters without limiting the type of load and the power conversion system.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a figure which shows the structural example of the power converter with which the semiconductor device by this invention is applied. It is a figure which shows the planar layout of each phase in the comparative example which implement | achieved the electrode extraction structure from the switching element by wire bonding. It is PQ sectional drawing in FIG. It is a 1st figure which shows the planar layout for the three phases in a comparative example. It is the 1st figure explaining the electrode extraction structure of the semiconductor device by Embodiment 1 of this invention. It is a 2nd figure explaining the electrode extraction structure of the semiconductor device by Embodiment 1 of this invention. It is a figure explaining the electrode extraction structure of the semiconductor device by Embodiment 2 of this invention. It is a figure explaining the electrode extraction structure of the semiconductor device by Embodiment 3 of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 Power converter, 11 Power supply line, 12 Ground line, 14 Smoothing capacitor, 15 Switching control circuit, 20 Battery, 30 AC motor, 51 Positive conductor, 52 Negative conductor, 53 Output conductor, 60 Case, 60 # Cooling path, 65 , 66 Signal terminal group, 70, 75 Conductor, 71 Insulating resin layer, 80 Insulating film, 90 Conductive film, 95 Wiring pattern, 91 Coupling part, 100, 100 #, 200, 300 Electrode plate, 101 Horizontal part, 102 Vertical part , 103 connection part, 104 contact part, 105 intermediate part, 106, 107 end, 110 control circuit board, 210 coupling part, GD1-GD6 gate drive circuit, Q1-Q6 switching element, QD lower arm element, QU upper arm Element, Qe emitter electrode, Qg gate electrode, S1-S6 Gate signal.

Claims (11)

First and second electrodes formed on the same side of the semiconductor element;
A first connection portion for electrically connecting to the first electrode, formed on one surface side of the conductive electrode plate that contacts the first and second electrodes;
Insulating coating is formed on the one surface of the first electrode plate surface over the other surface side opposite to the one surface from a part region except the connecting portions of the front Symbol collector electrode plate and, from the one side A conductor formed on the surface of the insulating coating over the other surface and insulated from the electrode plate ;
A semiconductor device comprising: a second connection portion configured to be electrically connected to the second electrode, which is configured by a portion formed on a surface of the partial region of the conductor.   The semiconductor device according to claim 1, wherein the conductor is formed of a conductive film. The second electrode is a control electrode;
The semiconductor device according to claim 1, wherein the first electrode is an electrode that generates a current corresponding to an electrical input to the control electrode. On the one surface side of the electrode plate , the intermediate portion provided between the first and second connection portions has a distance from the first and second electrode arrangement surfaces that is the first and second. The semiconductor device according to claim 1, wherein the semiconductor device has a shape secured longer than a distance between the second connection portion and the arrangement surface. First and second electrodes formed on the same side of the semiconductor element;
Formed on one side in contact with the first electrode of the conductive electrode plate, and a connecting portion for connecting the first electrode and electrically,
Insulating film in the other surface facing the one surface side of the front Symbol electrostatic electrode plate is formed on the surface of the electrode plate and a conductor which is insulated from the electrode plate is formed on a surface of said insulating film,
A semiconductor device comprising: a coupling portion that electrically couples the conductor and the second electrode.   The semiconductor device according to claim 5, wherein the coupling portion is configured by wire bonding. The electrode plate is only on one surface, the conductor and the insulating film is made of a flat plate while being formed,
By folding the end portion of the electrode plate, the second connecting portion by the conductor formed on the now positioned on one side portion of the electrode plate is composed, according to claim 1, wherein Semiconductor device. The second electrode is a control electrode;
The first electrode is an electrode that generates a current corresponding to an electrical input to the control electrode,
The conductor is provided with a signal line that electrically connects a drive circuit that generates an electrical signal for driving the control electrode and the control electrode,
The semiconductor device according to claim 1, wherein the drive circuit is disposed on the other surface side of the electrode plate . The first and second electrodes are arranged along a horizontal direction;
The electrode plate includes a first portion formed along the horizontal direction and a second portion formed along the vertical direction,
The semiconductor device according to claim 1, wherein the second portion is electrically connected to an element other than the semiconductor element .   The semiconductor device according to claim 9, further comprising a coupling portion for electrically connecting a region formed on the other surface side of the second portion of the conductor and a control circuit board.   The semiconductor device according to claim 1, wherein the semiconductor device is used as a switching element of a power converter.

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