JP4082265B2 - Manufacturing method of semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for manufacturing a semiconductor device.
[0002]
[Prior art]
As a conventional method of manufacturing a chip-type semiconductor device, a semiconductor wafer diced to a chip size is sandwiched between metal plates via a conductive adhesive for the purpose of omitting the wire bonding process of the semiconductor chip, and the chip In some cases, a chip-type semiconductor device is obtained by injecting a sealing resin in between and then dicing into a chip size (see, for example, Patent Document 1).
[0003]
FIG. 2 shows a manufacturing process of the conventional chip type semiconductor device described in Patent Document 1. 2A is a process of bonding the semiconductor wafer to the first substrate, FIG. 2B is a process of dicing the semiconductor wafer, and FIG. 2C is a process of bonding the second substrate to the semiconductor wafer. 2D is a resin sealing process, and FIG. 2E is a dicing process. 101 is a first substrate with electrodes formed on the entire surface, 102 is a conductive adhesive, 103 is a semiconductor wafer on which some device is constructed, 104 is a semiconductor chip, and 105 is a second substrate with electrodes formed on the entire surface. 106 are translucent sealing resins filled in the dicing grooves.
[0004]
A detailed manufacturing process will be described below. First, the conductive adhesive 102 is applied to the entire surface of the first substrate 101, the semiconductor wafer 103 is placed, and the conductive adhesive 102 is cured by passing through a curing furnace to bond the first substrate 101 and the semiconductor wafer 103. . Next, using a dicing machine in which the blade depth is adjusted so that the first substrate is not completely cut, the semiconductor wafer 103 is cut into a grid shape and divided into semiconductor chips 104. Next, like the first substrate 101, the conductive adhesive 102 is applied to the entire surface of the second substrate 105 on which the electrodes are formed on the entire surface, positioned and placed on the semiconductor chip 104, and then cured again. Then, the conductive adhesive 102 is cured, and the semiconductor chip 104 and the second substrate 105 are bonded. Then, a gap formed between the semiconductor chips 104 by dicing is filled with a translucent sealing resin 106 to seal the periphery of the semiconductor chip 104 with resin. Finally, in the dicing process, the first substrate 101, the semiconductor chip 104, and the second substrate 105 having the sandwich structure as described above are cut together for each semiconductor chip 104 by a dicing machine. Therefore, the light-transmitting sealing resin 106 sealed with resin can be left on the side surface of the semiconductor chip 104, and the chip-type semiconductor in which the periphery of the semiconductor chip 104 is surrounded by the light-transmitting sealing resin 106 is completed.
[0005]
[Patent Document 1]
JP-A-10-229097 [0006]
[Problems to be solved by the invention]
However, in the conventional configuration, since the conductive adhesive 102 is used for the electrical connection between the first substrate 101 and the second substrate 105 and the semiconductor wafer 103, the step of applying the conductive adhesive 102, A curing step is required. Therefore, the process becomes complicated. Further, since the conductive adhesive 102 is used, there is a problem that air bubbles enter between the first and second substrates and the semiconductor wafer 103 to cause poor conduction.
[0007]
The present invention solves the above-described conventional problems, and an object thereof is to provide a semiconductor chip that can be manufactured at a wafer level without using the conductive adhesive 102.
[0008]
[Means for Solving the Problems]
In order to solve the conventional problems, a method of manufacturing a semiconductor device according to the present invention includes a first electrode forming step in which a first metal layer is plated on a first main surface of a semiconductor wafer to form an electrode; A bump forming step for forming bumps on the second main surface of the semiconductor element formed on the semiconductor wafer, and then groove formation for dicing the semiconductor wafer into individual semiconductor elements, leaving the first metal layer. A second electrode forming step in which the bump and the second metal layer are thermocompression-bonded to form an electrode, a resin filling step in which the groove is filled with a sealing resin, and then the first A dicing step of dicing the sealing resin between the one metal layer and the semiconductor element and the second metal layer into individual pieces of the semiconductor element at a time, and each of the bump surface and the substrate surface With gold plating and sealing resin on the substrate Those having a through hole used for input.

[0009]
With this configuration, it is possible to manufacture a semiconductor device at the wafer level without using a conductive adhesive, and it is possible to reduce the process by forming external electrodes by plating technology, and by incorporating the bubbles of the conductive adhesive, Conduction failure can be eliminated.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
[0011]
(Embodiment)
1A to 1F show a method for manufacturing a semiconductor device according to an embodiment of the present invention. 1A to 1F, the same components as those in FIG.
[0012]
1A to 1F, 1 is a semiconductor wafer, 2 is a first metal layer formed by electrolytic plating on a base electrode provided on one surface of the wafer, and 3 is constructed on a semiconductor wafer. Plating bumps formed on the electrodes of the device, 4 is a semiconductor element in which the device is constructed, 5 is a groove formed by dicing the semiconductor wafer into chips, and 6 is bump plating formed on the semiconductor wafer. A second metal layer that becomes an external electrode by thermocompression bonding, 7 fills a groove formed by dicing, encapsulating resin surrounding the outer periphery of the chip, and 8 a seal provided on the second metal layer 6 It is a through-hole for filling a stop resin.
[0013]
(Configuration of the embodiment)
A detailed configuration will be described below.
[0014]
A first metal layer 2 such as copper is formed by electrolytic plating on a base electrode (not shown) provided on the first main surface of the semiconductor wafer 1 (FIG. 1A). According to this, there is no need to use a conductive adhesive when forming the metal layer 2 on the semiconductor wafer 1, there is no entrapment of bubbles generated when the conductive adhesive is used, and the semiconductor wafer 1 and This prevents poor conduction with the metal layer 2. Since this metal layer 2 directly serves as an external electrode (not shown) of the semiconductor chip component, it needs a certain thickness, and needs to be about 40 μm in consideration of the dicing process.
[0015]
Bumps 3 are formed on the device electrodes formed on the semiconductor wafer 1 by plating a metal such as copper. The bump 3 is subjected to Au / Ni plating (not shown) on the surface for thermocompression bonding with the second metal layer 6 (FIG. 1B) .
[0016]
The semiconductor wafer 1 is diced into individual semiconductor elements 4. At this time, the individual semiconductor elements 4 are diced and grooves 5 for filling the sealing resin 7 are formed (FIG. 1C).
[0017]
As the bump 3 and the second metal layer 6, for example, a metal plate having nickel plated on the surface of copper and subjected to gold plating is thermocompression bonded (FIG. 1D). At this time, by applying a heat of about 200 ° C. and a load of about 150 to 200 g per bump and thermocompression bonding, the gold applied to the bump 3 and the gold applied to the metal layer 6 are combined and firmly bonded. Is. In addition, a through hole 8 for injecting the sealing resin 7 is provided at the center of the second metal layer 6 to be crimped at this time (FIG. 1D).
[0018]
By injecting the sealing resin 7 from the through-hole 8 provided in the second metal layer 6, the groove 5 is filled with the sealing resin 7, and the sealing resin 7 is placed around the semiconductor element 4. Fill. After filling, the sealing resin 7 is cured and cured. If the through hole 8 is a 4-inch wafer, about 1 mm is required (FIG. 1 (e)).
[0019]
The first metal layer 2, the sealing resin 7, and the second metal layer 6, which have a sandwich structure through the above steps, are divided into individual semiconductor element 4 dimensions by dicing (FIG. 1). (F)). At this time, dicing may be performed at once in a state where the first metal layer 2 and the second metal layer 6 and the sealing resin 7 are combined. Further, dicing may be performed using a dicing blade suitable for each of the metal and the resin. Furthermore, the semiconductor element 4 and the scribe lane can be aligned by the through hole 8 for resin injection during dicing.
[0020]
According to such a configuration, one electrode of the semiconductor wafer 1 is formed by plating, a plating bump is formed on the other side, and an electrode is formed by thermocompression bonding with a metal plate, thereby using a conductive adhesive. Without any problem, a chip type semiconductor device having the periphery surrounded by the sealing resin 7 for protecting the chip element can be manufactured at the wafer level.
[0021]
In this embodiment, a metal layer is provided as an external electrode. However, a metal wiring may be provided on a substrate such as a glass-epoxy substrate and nickel may be plated on the surface thereof. Further, the bumps 3 provided on the electrodes of the device constructed on the semiconductor wafer 1 are not limited to plating bumps, and it is possible to perform thermocompression bonding with a metal layer by providing a stat bump such as gold.
[0022]
Moreover, although it demonstrated using dicing when dividing | segmenting into each semiconductor element, it is not limited to this method.
[0023]
【The invention's effect】
As described above, according to the manufacturing process of the chip type semiconductor device of the present invention, by forming the external electrode by plating, the process of applying and curing the conductive adhesive can be reduced, and the plating bump and the metal plate can be attached to the wafer. By performing pressure bonding in units at a time, it is possible to eliminate defects such as entrapment of bubbles, which are caused by reducing the number of processes and using a conductive adhesive or the like.
[Brief description of the drawings]
FIG. 1 is a manufacturing process diagram of a chip-type semiconductor device according to an embodiment of the present invention. FIG. 2 is a manufacturing process diagram of a conventional chip-type semiconductor device.
DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 First metal layer 3 Bump 4 Semiconductor element 5 Groove 6 Second metal layer 7 Sealing resin 8 Through hole 101 First substrate 102 Conductive adhesive 103 Semiconductor wafer 104 Semiconductor chip 105 Second Substrate 106 Translucent sealing resin

Claims (3)

A first electrode forming step of forming an electrode by plating a first metal layer on the first main surface of the semiconductor wafer; and a bump for forming a bump on the second main surface of the semiconductor element formed on the semiconductor wafer. Forming a groove, then forming a groove by dicing the semiconductor wafer into individual semiconductor elements, leaving the first metal layer, and then thermocompressing the bump and the second metal layer to form an electrode. A second electrode forming step of forming a resin, a resin filling step of filling the groove with a sealing resin, a sealing resin between the first metal layer and the semiconductor element, and the second metal layer And a dicing step of dicing the semiconductor element into individual pieces at once.   The method of manufacturing a semiconductor device according to claim 1, wherein the bump surface and the substrate surface are individually provided with gold plating.   3. The method of manufacturing a semiconductor device according to claim 1, wherein the substrate is provided with a through hole used for injecting a sealing resin.

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