JP4046268B2 - Vapor deposition mask for organic EL device and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vapor deposition mask for organic EL elements used when forming a light emitting layer of an organic EL element by a vapor deposition mask method, and a method for producing the vapor deposition mask for organic EL elements.
[0002]
[Prior art]
As a display device that replaces CRT and liquid crystal, light emitting layers of red (R), green (G), and blue (B) made of an organic compound material are formed on a light-transmitting substrate in a matrix shape or a stripe shape. There are organic EL (electroluminescence) display panels arranged in various patterns. As a method for forming a light emitting layer of an organic EL element, it is widely known that a dry process represented by an evaporation mask method is advantageous from the viewpoint of accuracy, productivity, and the like. As shown in FIG. 20, in the vapor deposition mask method according to the conventional example, a vapor deposition mask 50 having vapor deposition through holes 52 corresponding to the formation pattern of the coloring layer 51 is brought into close contact with the substrate 2 of the element. Only the organic material vaporized by the vaporization source is vapor-deposited to form the coloring layer 51 on the substrate 2. The vapor deposition mask 50 is made of stainless steel, iron, nickel alloy or the like.
[0003]
[Problems to be solved by the invention]
However, in this vapor deposition mask 50, the organic material bites into the inner peripheral surface of the vapor deposition through hole 52, so that the releasability from the substrate 2 is poor, and the peripheral edge of the light emitting layer 51 is scraped off by the opening edge 52 a of the mask 50. As a result, chipping 53 is likely to occur. As described above, the light emitting layer 51 having the chip 53 has uneven luminance, which is a major obstacle to improving the accuracy of the organic EL element.
[0004]
In addition, as a method for manufacturing a through-hole of a vapor deposition mask at present, there are a wet etching method and a laser method, but the wet etching method cannot be formed with high accuracy. In addition, in the case of using a laser, if the number of vapor deposition through holes to be formed is large, the manufacturing cost becomes high, and warping due to heat reaction, that is, undulation is likely to occur around the through holes due to the influence of heat during formation. There are also problems such as a decrease in accuracy.
[0005]
An object of the present invention is to obtain a vapor deposition mask for an organic EL element which can form a light emitting layer having a uniform shape with high reproducibility and can be manufactured at a low cost, and a method for manufacturing the same.
[0006]
[Means for Solving the Problems]
The present invention relates to a vapor deposition mask for an organic EL element in which a large number of vapor deposition through holes 6 for forming a light emitting layer 5 are independently provided in a mask body 3 made of an electrodeposited metal as shown in FIG. On the upper surface side of the vapor deposition mask, that is, on the side facing the substrate 2 on which the light emitting layer 5 is vapor-deposited, a projecting portion 7 for improving releasability with respect to the substrate 2 is provided so as to protrude upward. It is characterized by that. The protrusion height dimension h of the convex portion 7 is desirably in the range of 1 to 10 μm.
[0007]
Specifically, as shown in FIG. 3 and FIG. 6, a large number of vapor deposition through holes 6 are arranged and a large number of independent convex portions 7 are arranged in a divided row between the vapor deposition through holes 6. Can do. In this case, as shown in FIG. 7, it is desirable that each convex portion 7 has a shape that can contact the substrate 2 in a dot shape.
[0008]
As shown in FIGS. 9 and 10, long rib-like convex portions 7 can be provided between the rows of the vapor deposition through holes 6 in the front-rear direction.
[0009]
Further, the present invention provides a vapor deposition for an organic EL element in which a plurality of vapor deposition through holes 6 for forming a light emitting layer 5 on a substrate 2 are independently provided in a mask body 3 made of an electrodeposited metal. In the mask manufacturing method, a first patterning step of providing a primary pattern resist 13 having a resist body 13a on the surface of the mother die 10 as shown in FIG. 4C, and a mother die as shown in FIG. The first electrodeposition step of forming a primary electrodeposition layer 14 by electroforming an electrodeposited metal on the electrode 10, and the upper surface of the resist body 13a as shown in FIG. A second patterning step of providing a secondary pattern resist 18 having an opening 18b corresponding to an arbitrary position, and electrodeposition corresponding to the opening 18b on the primary electrodeposition layer 14 as shown in FIG. A primary electrodeposition layer 14 is formed by electroforming metal. A second electroforming step for forming an inseparable manner the secondary electrodeposited layers 19, a peeling step from the matrix 30 for separating the primary and secondary electrodeposited layers 14, 19,
Before and after the peeling step, a step of removing the primary and secondary pattern resists 13 and 18 is included. According to this, with the removal of the resist body 13 a of the primary pattern resist 13, the vapor deposition through hole 6 is formed in the primary electrodeposition layer 14, and the secondary electrodeposition layer formed in the opening 18 b of the secondary pattern resist 18. 19 becomes the convex part 7 for mold release improvement with respect to the board | substrate 2. As shown in FIG. The pattern resists 13 and 18 can be formed by a lithography method using a photoresist or the like or any other method, and the forming means for the pattern resists 13 and 18 is not limited.
[0010]
In order to manufacture a vapor deposition mask for an organic EL element as shown in FIG. 3, the secondary pattern resist 18 is provided with a large number of independent openings 18b (rectangular shapes) adjacent to each other between the vapor deposition through holes 6, and these. A large number of independent protrusions 7 may be electroformed in the opening 18b.
[0011]
In order to manufacture a vapor deposition mask for an organic EL element as shown in FIG. 6, the primary electrodeposition layer is replaced with the primary electrodeposition layer as shown in FIG. 8 (a) instead of the steps of FIG. 5 (a) and FIG. 5 (b). A second patterning process in which a secondary pattern resist 18 having a circular opening different from the shape of the previous opening 18b is thinly formed in a range of 1 to 3 μm, for example, on the surface 14, as shown in FIG. 8B. The electrodeposition metal is electroformed on the primary electrodeposition layer 14 so as to overhang the resist body 18a, and the secondary electrodeposition layer is inseparably integral with the primary electrodeposition layer 14. What is necessary is just to take the 2nd electroforming process which forms 19. Also by this, with the removal of the resist body 13a of the primary pattern resist 13, the vapor deposition through hole 6 is formed in the primary electrodeposition layer 14, and the opening 18b of the secondary pattern resist 18 is used for improving the releasability with respect to the substrate 2. The convex part 7 can be formed.
[0012]
In order to manufacture a vapor deposition mask for an organic EL element as shown in FIG. 9, a long line-shaped opening 18b in the front-rear direction is provided in a stripe pattern instead of the secondary pattern resist 18 having a large number of independent openings 18b. The secondary pattern resist 18 may be used, and the long rib-like convex portions 7 corresponding to the openings 18b can be electroformed.
[0013]
Furthermore, the vapor deposition mask for organic EL elements as shown in FIG. 9 can be manufactured by the procedure as shown in FIGS. That is, as shown in FIG. 11A, a first patterning process in which an etching resist 31 having a resist body 31a in a long line in the front-rear direction is provided on the mother die 30, and a resist as shown in FIG. An etching process for etching the surface of the master block 30 in the left-right gap of the body 31a to form the concave groove 32, and an etching resist is recoated so as to fill the concave groove 32 as shown in FIG. After that, a second patterning process for providing a pattern resist 34 having a large number of independent resist bodies 34a as shown in FIG. 12A, and on the mother die 30 excluding the resist bodies 34a as shown in FIG. The electrodeposition metal 35 is electroformed to form an electrodeposition layer 35, the resist removal step of removing the resist body 34a, and the electrodeposition layer 35 is peeled off from the matrix 30. Manufacturing method include a separation step may be adopted. According to this, the vapor deposition through-hole 6 is formed in the electrodeposition layer 35 with the removal of the resist body 34a. Further, the portion of the electrodeposition layer 35 formed by electroforming in the concave groove 32 of the mother die 30 becomes the convex portion 7 for improving the peelability from the substrate 2.
[0014]
Moreover, the frame sticking process which sticks the metal frame 4 to the periphery of the mask main body 3 can be included. In this case, it is preferable that the frame attaching process is performed prior to the peeling process.
[0015]
[Effects of the invention]
As shown in FIG. 20, when the deposition operation is performed so that the substrate 2 and the deposition mask 50 are in close contact with each other, the light emission deposited on the substrate 2 when the deposition mask 50 is released from the substrate 2 after the deposition operation. There is a problem that the peripheral edge of the layer 51 is scraped off by the opening edge 52a of the mask 50 and the chip 53 is generated. In this regard, according to the vapor deposition mask for an organic EL element according to the present invention, the convex portion 7 is formed on the upper surface side of the vapor deposition mask 1, that is, on the side facing the substrate 2 on which the light emitting layer 5 is vapor deposited, as shown in FIG. Is provided so as to protrude upward, so that the vapor deposition operation is carried out in such a posture that only the upper end of the projection 7 is in contact with the substrate 2, and after completion of the operation, the vapor deposition mask 1 is not interfered with the light emitting layer 5. Can be separated from the glass substrate 2. Therefore, inevitable chipping of the light emitting layer 5 when the mask body 3 is in close contact with the substrate 2 can be effectively prevented, and the light emitting layer 5 having a uniform shape can be formed with high accuracy and good reproducibility.
[0016]
Moreover, since the whole mask main body 3 is reinforced by presence of the convex part 7, the whole intensity | strength of the vapor deposition mask 1 increases and it can make it hard to bend | deflection by its own weight. Accordingly, there is no problem that the alignment accuracy in the vapor deposition apparatus varies, and the positional accuracy and reproducibility of the light emitting layer 5 can be improved.
[0017]
In this invention, as shown in FIG. 1, the protrusion height dimension of the convex part 7 is set to the range of 1-10 micrometers. When the height dimension of the convex part 7 is less than 1 μm, it is difficult to obtain an effect of improving the releasability, and when the height dimension exceeds 10 μm, the vapor deposition material wraps around the back surface of the mask 1, so There is a problem that bleeding occurs at the boundary with the vapor deposition region and the periphery of the light emitting layer 5 becomes unclear.
[0018]
As shown in FIG. 3, the fact that a large number of independent protrusions 7 are arranged in parallel between the rows of vapor deposition through holes 6 reduces the contact area with the substrate 2 and improves the releasability. Because. Furthermore, as shown in FIG. 6 and FIG. 7, if each convex portion 7 has a tapered shape in which the thickness gradually increases as it goes from the periphery to the center, the convex portion 7 contacts the substrate 2 in a point shape. , Adhesion and releasability are improved.
[0019]
As shown in FIG. 9, if the long rib-like convex portions 7 are provided at the front and rear, the backing portion of the mask main body 3 is compared with the configuration including a large number of independent convex portions 7 as shown in FIGS. 3 and 6. Therefore, the mask 1 is more difficult to bend. Therefore, the vapor deposition mask 1 having excellent positional accuracy and reproducibility of the light emitting layer 5 can be obtained.
[0020]
According to the method for manufacturing a vapor deposition mask for an organic EL element according to the present invention, the mask body 3 having the primary electrodeposition layer 14, that is, the vapor deposition through hole 6 is formed by an electroforming method. Compared to the type to be formed, it has the advantage that it can be manufactured with high accuracy and with high productivity. Compared to the laser processing type, it is advantageous in that the manufacturing cost is low, and no swell due to thermal reaction occurs, and it can be made with high accuracy.
[0021]
If the mounting operation of the frame 4 is performed in a state where it is attached to the mother die, there is an advantage that positional deviation of the mask main body 3 hardly occurs and dimensional stability can be secured.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
First Embodiment FIGS. 1 to 3 show a vapor deposition mask for an organic EL element according to a first embodiment of the present invention. FIG. 1 shows a state in which the mask 1 is arranged below a glass substrate 2 on which the light emitting layer 5 is to be deposited. The mask 1 shown here is a mask for forming the red (R) light emitting layer 5. The mask 1 is made of a nickel alloy such as nickel or nickel cobalt, or other electrodeposited metal as a raw material, and a mask body 3 formed by an electroforming method and a metal made of a metal such as stainless steel or aluminum attached to the periphery thereof. It consists of a frame 4 (FIG. 2). The mask body 3 is provided with a large number of vapor deposition holes 6 for forming the light emitting layer 5 independently. The thickness of the mask body 3 is preferably in the range of 10 to 100 μm, and is set to 10 μm in this embodiment. In FIG. 1, a transparent electrode, a buffer layer, and the like are formed between the glass substrate 2 and the light emitting layer 5, but the illustration is omitted here.
[0023]
As shown in FIG. 3, the vapor deposition through-hole 6 has a rectangular shape with a longitudinal dimension of 200 μm and a lateral width dimension of 30 to 80 μm in plan view. The vapor deposition through-hole 6 is formed in a matrix shape in which a plurality of through-hole groups arranged linearly in the front-rear direction are arranged in a row, and the plurality of rows are arranged in parallel in the left-right direction. Between the rows of the vapor deposition through holes 6 adjacent to each other, two light emitting layers of green (G) and blue (B) are formed as indicated by phantom lines in FIG. For this reason, the opening interval of the adjacent vapor deposition through holes 6 in the left-right direction is set to be as large as the formation region of these two-color light emitting layers. As shown in FIG. 1, the inner peripheral surface of each vapor deposition through-hole 6 is straight.
[0024]
As shown in FIG. 1, on the upper surface side of the mask 1, that is, on the surface facing the substrate 2, a convex portion 7 for improving releasability with respect to the substrate 2 is provided so as to protrude upward. As shown in FIG. 3, each convex portion 7 has a rectangular shape that is long to the left and right in a plan view, and is disposed between the vapor deposition through holes 6 that are aligned in the front-rear direction. In the present embodiment, the width dimension before and after the convex portion 7 is set to 10 μm, and the left and right width dimension is set to 100 μm. As shown in FIG. 1, each convex portion 7 preferably has a bowl shape with a thin end portion and a thick central portion as viewed in a longitudinal side view, and the central portion is in line contact with the glass substrate 2.
[0025]
The protrusion dimension h of the convex part 7, ie, the thickness dimension in the center part of the convex part 7 shall be 1-10 micrometers. When the protrusion dimension h of the convex portion 7 is less than 1 μm, it is difficult to obtain an effect of improving the releasability. When the protruding dimension h exceeds 10 μm, the vapor deposition material goes around to the back surface of the mask 1, and bleeding is likely to occur at the boundary between the vapor deposition region and the non-vapor deposition region, and the shape of the peripheral edge of the light emitting layer 5 tends to be uneven.
[0026]
4 and 5 show a method of manufacturing an electrodeposition mask for organic EL elements according to this example. First, as shown in FIG. 4A, a photoresist layer 11 is formed on the surface of a mother mold 10 made of, for example, stainless steel or brass having conductivity. This photoresist layer 11 was formed by laminating one or several negative photosensitive dry film resists according to a predetermined height, and then thermocompression bonding.
[0027]
Next, as shown in FIG. 4B, a pattern film 12 (glass mask) having a light transmitting hole 12a corresponding to the vapor deposition through hole 6 is brought into close contact with the photoresist layer 11, and then ultraviolet rays are used with an ultraviolet light lamp. A straight resist corresponding to the vapor deposition through-hole 6 as shown in FIG. 4C is obtained by irradiating light, performing development, drying, and dissolving and removing unexposed portions. A primary pattern resist 13 having a body 13 a was formed on the mother die 10.
[0028]
Subsequently, the mother die 10 is put in an electroforming bath that is bathed under a predetermined condition, and the resist member 13a of the mother die 10 is used within the range of the height of the previous resist member 13a as shown in FIG. The electrodeposited metal such as nickel or nickel alloy is preferably subjected to primary electroforming on the uncovered surface in the range of 10 to 100 μm thickness, in this embodiment 50 μm thickness, and the primary electrodeposition layer 14, that is, the mask body 3 and A layer was formed. Next, after polishing and smoothing the surface of the primary electrodeposition layer 14, as shown in FIG. 5A, the secondary pattern resist 18 having the resist body 18 a is made into a primary electrode using a photosensitive resist or the like. It was formed on the deposition layer 14. Here, the resist body 18a is formed so as to have a thickness of 3 to 5 μm. The secondary pattern resist 18 has a rectangular opening 18 b corresponding to the convex portion 7. A part of the resist body 18 a covers the primary electrodeposition layer 14.
[0029]
Next, as shown in FIG. 5B, an electrodeposition metal such as nickel or nickel alloy is preferably deposited on the surface of the opening 18b of the primary electrodeposition layer 14 that is not covered with the secondary pattern resist 18 in a thickness of 1 to 10 μm. In this embodiment, in this example, the film was electroformed with a thickness of 3 μm to form a secondary electrodeposition layer 19, that is, a layer to be the convex portion 7. Thus, the mask body 3 was obtained in which the secondary electrodeposition layer 19 was inseparably formed on the primary electrodeposition layer 14. Finally, after the primary and secondary pattern resists 13 and 18 are dissolved and removed, a frame 4 made of aluminum or stainless steel is attached to the periphery of the mask body 3, and the primary and secondary electrodeposition layers are formed from the matrix 10. By peeling 14 and 19, the organic EL element deposition mask 1 having a large number of independent protrusions 7 on the upper surface side of the mask body 3 having a large number of deposition through-holes 6, as shown in FIG. Obtained. In the secondary electroforming process shown in FIG. 5 (b), a bright plating was performed by putting a second type brightener such as butynediol in the electroforming tank. Thus, as shown in FIG. 1, a ridge-shaped convex portion 7 having a thin front and rear end portion and a thick central portion in a longitudinal side view was obtained.
[0030]
As described above, in the vapor deposition mask 1 for an organic EL element according to the present embodiment, since a large number of independent convex portions 7 are provided on the upper surface side of the mask body 3, in the vapor deposition process of forming the light emitting layer 5 on the substrate 2, The operation can be performed in such a posture that only the upper ends of the convex portions 7 are in contact with the substrate 2. That is, the vapor deposition operation can proceed with the mask body 3 slightly lifted from the substrate 2. Therefore, the vapor deposition mask 1 can be separated from the glass substrate 2 without the peripheral edge of each vapor deposition through-hole 6 interfering with the light emitting layer 5 after the operation is completed, and the mask body 3 is brought into close contact with the substrate 2. In this case, it is possible to effectively prevent the inevitable chipping of the light emitting layer 5 and to form the light emitting layer 5 having a uniform shape with high accuracy and good reproducibility. In addition, since the mask 1 has a substantially two-layer structure of the mask main body 3 and the convex portion 7, it is advantageous in that the overall strength of the mask 1 is increased.
[0031]
When the convex portion 7 has a bowl shape in a longitudinal sectional view in which the thickness of the front and rear end portions is thin and the thickness gradually increases toward the central portion, only the central portion is in linear contact with the substrate 2. As shown in FIG. 1, compared with the form in which the entire upper surface of the convex portion 7 is in contact with the substrate 2, it is excellent in adhesion and releasability. Moreover, when the convex part 7 is formed near the vapor deposition through hole 6, the convex part 7 itself contacts the light emitting layer 5, and there is a possibility that the periphery of the light emitting layer 5 is scraped. If the thickness of the front and rear end portions of 7 is reduced, the probability of contact with the light emitting layer 5 is kept low, and the lack of the light emitting layer 5 can also be effectively prevented in this respect.
[0032]
Since the protrusion dimension h of the convex portion 7 is set to be as low as 1 to 10 μm, the vapor deposition material wraps around the back surface of the mask 1, and bleeding occurs at the boundary between the vapor deposition region and the non-vapor deposition region. There are few defects that become uniform. Therefore, this point can also contribute to high accuracy of the element.
[0033]
The vapor deposition through holes 6 can be arranged in an oblique direction as shown in FIG. 16 in addition to being arranged linearly in the front-rear direction as shown in FIG. In the form shown in FIG. 16, the length dimension of the convex part 7 in the left-right direction is set slightly larger than the opening width dimension of the two vapor deposition through holes 6 in the left-right direction. Other configurations and operational effects are the same as those in FIGS. 1 to 3, and thus description thereof is omitted here.
[0034]
Second Example FIGS. 6 and 7 show a vapor deposition mask for organic EL elements according to a second example of the present invention. In the mask 1 according to this embodiment, a large number of independent protrusions 7 are formed on the upper surface of the mask body 3 so as to protrude upward, and each protrusion 7 has a circular shape in plan view. However, this is different from the first embodiment. As shown in FIG. 7, each convex portion 7 has a tapered shape in which the thickness gradually increases from the periphery toward the center, and the upper end portion contacts the substrate 2 (see FIG. 1) in a dot shape. .
[0035]
The manufacturing method of the vapor deposition mask for organic EL elements which concerns on 2nd Example is demonstrated using FIG. 4 and FIG. First, as shown in FIG. 4A, a photoresist layer 11 was formed on the surface of a matrix 10 made of stainless steel or brass having conductivity. Next, as shown in FIG. 4B, a pattern film 12 (glass mask) having a light transmitting hole 12a corresponding to the vapor deposition through hole 6 is brought into close contact with the photoresist layer 11, and then an ultraviolet ray is irradiated with an ultraviolet lamp. Is exposed to light, and each process of development and drying is performed, and unexposed portions are dissolved and removed, so that a straight resist body 13a corresponding to the vapor deposition through-hole 6 is obtained as shown in FIG. A primary pattern resist 13 having the following is formed on the mother die 10. Subsequently, as shown in FIG. 4 (d), an electrodeposited metal such as a nickel alloy is preferably 5 on the surface not covered with the resist body 13a of the mother die 10 within the range of the height of the previous resist body 13a. In this embodiment, primary electroforming was performed in a thickness of 10 μm in the range of ˜100 μm, and the primary electrodeposition layer 14, that is, the layer that becomes the mask body 3 was formed. The above steps are the same as in the first embodiment.
[0036]
Next, after the surface of the primary electrodeposition layer 14 is polished, as shown in FIG. 8A, a secondary pattern resist 18 having a resist body 18a is formed on the primary electrodeposition layer 14 using a photosensitive liquid resist or the like. Thinly formed. Here, the resist body 18a is formed so as to have a thickness in the range of 1 to 2 μm. A portion not covered with the resist body 18a is a circular opening 18b corresponding to the convex portion 7 (see FIG. 6).
[0037]
Next, as shown in FIG. 8B, an electrodeposition metal such as nickel-cobalt containing a large amount of brightener is electroformed on the surface of the opening 18b of the primary electrodeposition layer 14 not covered with the secondary pattern resist 18. Thus, the secondary electrodeposition layer 19, that is, the convex portion 7 was formed. Here, the electrodeposited metal was electroformed beyond the height of the resist body 18a and overhanged so that the convex portion 7 covered the edge of the resist body 18a. Specifically, the convex portion 7 was formed by electroforming with a thickness of 4 μm in the present example in the range of 3 to 5 μm.
[0038]
Finally, after the primary and secondary pattern resists 13 and 18 are dissolved and removed, the frame body 4 (see FIG. 2) is attached to the peripheral edge of the mask body 3, and the primary and secondary electrodeposition layers 14 and 19 are attached from the matrix 10. As shown in FIG. 8C, an organic EL element deposition mask 1 having a large number of convex portions 7 on the mask body 3 was obtained.
[0039]
The convex part 7 of the vapor deposition mask 1 for organic EL elements obtained as described above has a circular shape in a plan view and a tapered shape in a tapered side view as shown in FIGS. The convex portions 7 are positioned between the vapor deposition through holes 6 adjacent to each other in the front-rear direction, and are provided independently in a large number so as to protrude upward from the mask body 3. By dissolving and removing the secondary pattern resist 18, fine concave portions 25 are formed at the joint portion between the convex portions 7 and the mask body 3.
[0040]
According to the mask 1 according to the present embodiment, since a large number of independent protrusions 7 are provided on the upper surface side of the mask body 3, only the upper ends of these protrusions 7 are formed in the vapor deposition process for forming the light emitting layer 5 on the substrate 2. The work can be carried out in such a posture that makes point contact with the substrate 2. Therefore, after completion of the operation, the peripheral edge of each vapor deposition through hole 6 can separate the vapor deposition mask 1 from the glass substrate 2 without interfering with the light emitting layer 5, and the mask body 3 is brought into close contact with the substrate 2. In this case, it is possible to effectively prevent the inevitable chipping of the light emitting layer 5 and to form the light emitting layer 5 having a uniform shape with high accuracy and good reproducibility. In particular, the convex portion 7 has a tapered shape so as to come into contact with the substrate 2 in a point-like manner, which is advantageous in that the mask 1 exhibits excellent adhesion and releasability.
[0041]
(Third Embodiment) FIGS. 9 and 10 show a vapor deposition mask for an organic EL element according to a third embodiment of the present invention. The mask 1 according to the present embodiment is different from the first and second embodiments in that each convex portion 7 is formed in a continuous rib shape that is long on the left and right. Each convex portion 7 has a ridge shape in which the thickness of the front and rear end portions is thin in a longitudinal sectional view and gradually increases toward the central portion, and the central portion is in linear contact with the substrate 2 (see FIG. 1). It is.
[0042]
FIG. 11 and FIG. 12 show the manufacturing method of the vapor deposition mask for organic EL elements based on a present Example. First, as shown in FIG. 11A, an etching resist 31 having a resist body 31a that is long in the left-right direction is formed in a stripe shape on the surface of a stainless steel mother die 30 having conductivity. Next, as shown in FIG. 11B, the surface not covered with the resist body 31a of the matrix 30 was etched to form a groove 32 that was long in the left-right direction. Here, chemical etching was performed to form a groove 32 having a bowl-shaped cross section having a depth of 3 μm.
[0043]
Next, as shown in FIG. 11 (c), the resist is recoated so as to fill the concave grooves 32, and the entire surface of the mother die 30 is covered with the etching resist 31, and then pattern baking, development, and unnecessary. The resist removal process was performed to form a pattern resist 34 having a large number of independent resist bodies 34a corresponding to the vapor deposition through holes 6 as shown in FIG. Subsequently, as shown in FIG. 12B, an electrodeposited metal such as nickel cobalt is electroformed on the surface of the mother die 30 not covered with the resist body 34a, so that the mask body 3 and the convex portion 7 are inseparably integrated. Thus, an electrodeposition layer 35 formed in the above was obtained. Here, the thickness of the electrodeposition layer 35 according to the mask main body 3 was set to 30 μm.
[0044]
The resist body 34a is dissolved and removed to form the vapor deposition through hole 6, the frame body 4 (see FIG. 10) is attached to the periphery of the mask body 3, and finally the electrodeposition layer is peeled off from the matrix 30. The vapor deposition mask 1 for organic EL elements which has the continuous rib-shaped convex part 7 long in the left-right direction as shown in FIG.12 (c) was obtained.
[0045]
According to the vapor deposition mask for organic EL elements according to the present embodiment, since a large number of continuous rib-shaped convex portions 7 are provided on the upper surface side of the mask body 3, in the vapor deposition process of forming the light emitting layer 5 on the substrate 2, Work is carried out in such a posture that only the upper ends of the convex portions 7 are in contact with the substrate 2. After the work is finished, the vapor deposition mask 1 is placed on the glass substrate 2 without the opening edge of the vapor deposition through-hole 6 interfering with the light emitting layer 5. Can be separated from Therefore, inevitable chipping of the light emitting layer 5 when the mask body 3 is in close contact with the substrate 2 can be effectively prevented, and the light emitting layer 5 having a uniform shape can be formed with high accuracy and good reproducibility.
[0046]
If the rib-shaped convex portions 7 that are long on the left and right are provided, the backing portion of the mask body 3 can be enlarged, and the bending deformation due to the weight of the mask 1 can be effectively prevented. Therefore, the mask 1 according to the present embodiment is excellent in positional accuracy and reproducibility of the light emitting layer 5.
[0047]
Fourth Example An organic EL element deposition mask 1 according to this example includes an upper layer 41 provided on the substrate 2 side and a lower surface side of the upper layer 41, that is, a vaporization source 43 as shown in FIG. The lower layer 42 is formed in the flying direction. The vapor deposition through-hole 6 has a stepped shape in cross section formed so as to spread outward in the direction in which the vaporized material from the vaporization source 43 comes in. Specifically, each vapor deposition through hole 6 has a small hole portion 44 whose inner peripheral surface is provided in a straight shape in the upper layer 41, and an opening larger than the small hole portion 44 that communicates with the small hole portion 44. It has a large hole portion 45 provided on the lower layer 42 side in a straight shape with an inner peripheral surface having a dimension. FIG. 14 is a plan view of the organic EL element deposition mask 1 according to the present embodiment as viewed from below. In this mask 1, the lower layer 42 is formed so as to surround the peripheral edge of the rectangular small hole 44. A rectangular large hole 45 is formed in a recess.
[0048]
As shown in FIG. 21, when the plate thickness of the mask body 3 is thick, a shadow is formed by the opening upper edge 6a of the vapor deposition through hole 6, and the obtained light emitting layer 5 has a distorted shape. In this regard, as shown in FIG. 13, the mask body 3 has a two-layer structure of a lower layer 42 and an upper layer 41, and the vapor deposition through hole 6 has a small hole 44 on the upper layer 41 side and a large hole 45 on the lower layer 42 side. If it is made into the stepped shape of the cross-sectional shape which consists of below, it will become possible to receive the vaporization material from the vaporization source 43 from a wide angle. Therefore, there is an advantage that the light-emitting layer 5 having a uniform cross-sectional shape can be obtained by eliminating the shadow caused by the upper edge of the opening. In addition, the reinforcement effect due to the presence of the lower layer 42 can further prevent the deposition mask 1 itself from being deformed or bent. Thus, coupled with the provision of the projecting portion 7 for improving the releasability, the light emitting layer 5 can be formed with high accuracy and good reproducibility.
[0049]
As shown in FIG. 15 (a), the lower layer 42 is formed in a long line shape along the left and right ends of the vapor deposition through hole 6, and the recessed portion surrounded by these lower layers 42 and 42 is formed as a small hole 44. It can be set as the large hole part 45 which leads to. Moreover, as shown in FIG.15 (b), it is good also considering the lower stage layer 42 as a parting row shape. Also by these forms, the same effect as the mask 1 shown in FIGS. 13 and 14 can be obtained.
[0050]
In addition to the above embodiments, the vapor deposition mask 1 for organic EL elements according to the present invention can be configured as shown in FIGS. First, in FIG. 17A, the vapor deposition through-holes 6 are long and straight, and then, along the left and right edges of the vapor deposition through-holes 6, long divided front and rear convex portions 7 are arranged. is there. As shown in FIG. 17B, the convex portions 7 may be formed in a long row in the front-rear direction. As shown in FIG. 17C, circular convex portions 7 may be arranged at equal intervals in plan view along the left and right edges of the linear vapor deposition through hole 6 that is long in the front-rear direction.
[0051]
As shown in FIGS. 18A to 18C, the masks 1 for the light emitting layers of three colors R, G, and B may have completely different forms. That is, in the R and G masks shown in FIGS. 18A and 18B, the convex portions 7 are in a long line shape in the front-rear direction along the left and right end sides of the vapor deposition through hole 6. On the other hand, in the B mask shown in FIG. 18C, the projections 7 are in a row shape that is long in the left-right direction.
[0052]
In each of the above-described embodiments, the convex portion 7 has a ridge shape or a tapered shape having a tapered shape. However, as shown in FIG. 19, the convex portion 7 may have a square section with a flat upper end surface.
[Brief description of the drawings]
FIG. 1 is a longitudinal side view of a vapor deposition mask for an organic EL device according to a first embodiment of the present invention.
FIG. 2 is a partially enlarged perspective view of a vapor deposition mask for organic EL elements according to a first embodiment of the present invention.
FIG. 3 is a plan view of a vapor deposition mask for organic EL elements according to the first embodiment of the present invention.
FIG. 4 is a process explanatory diagram of a manufacturing process of a vapor deposition mask for an organic EL element according to a first embodiment of the present invention.
FIG. 5 is a process explanatory diagram of a manufacturing process of a vapor deposition mask for an organic EL element according to a first embodiment of the present invention.
FIG. 6 is a plan view of a vapor deposition mask for organic EL elements according to a second embodiment of the present invention.
FIG. 7 is a vertical side view of a vapor deposition mask for organic EL elements according to a second embodiment of the present invention.
FIG. 8 is a process explanatory diagram of a manufacturing process of a vapor deposition mask for organic EL elements according to a second embodiment of the present invention.
FIG. 9 is a plan view of a vapor deposition mask for organic EL elements according to a third embodiment of the present invention.
FIG. 10 is a partially enlarged perspective view of a vapor deposition mask for organic EL elements according to a second embodiment of the present invention.
FIG. 11 is a process explanatory diagram of a manufacturing process of an organic EL element deposition mask according to a third embodiment of the present invention.
FIG. 12 is a process explanatory diagram of a manufacturing process of a vapor deposition mask for organic EL elements according to a third embodiment of the present invention.
FIG. 13 is a longitudinal sectional view showing a vapor deposition mask for an organic EL device according to a fourth embodiment of the invention.
FIG. 14 is a plan view of a vapor deposition mask for an organic EL device according to a fourth embodiment of the present invention as viewed from below.
FIGS. 15A and 15B are diagrams showing another embodiment of the vapor deposition mask for organic EL elements according to the fourth example, and are plan views of the mask as seen from below. FIGS.
FIG. 16 is a plan view showing another embodiment of the vapor deposition mask for organic EL elements according to the present invention.
17 (a), (b), and (c) are plan views showing another embodiment of a vapor deposition mask for organic EL elements according to the present invention.
FIGS. 18A and 18B are plan views showing another embodiment of a vapor deposition mask for organic EL elements according to the present invention.
FIG. 19 is a longitudinal sectional view showing another embodiment of the vapor deposition mask for organic EL elements according to the present invention.
FIG. 20 is a longitudinal sectional view showing a conventional organic EL element deposition mask.
FIG. 21 is a diagram for explaining problems of a conventional vapor deposition mask for organic EL elements.
[Explanation of symbols]
1 mask
2 Substrate
3 Mask body
4 Frame
5 Light emitting layer
6 Vapor deposition hole
7 Convex
10 Mother mold
13 Primary pattern resist
13a resist body
14 Primary electrodeposition layer
18 Secondary pattern resist
18b opening
19 Secondary electrodeposition layer
30 mother mold
31 Etching resist
31a Resist body
32 groove
34 Pattern resist
34a resist body
35 Electrodeposition layer

Claims (4)

A mask body (3) made of electrodeposited metal is a vapor deposition mask for an organic EL element in which a plurality of vapor deposition through holes (6) for forming a light emitting layer (5) are provided independently in a vertically penetrating manner,
On the upper surface side of the vapor deposition mask, that is, on the side facing the substrate (2) on which the light emitting layer (5) is vapor-deposited, a projecting portion (7) for improving releasability with respect to the substrate (2) It is provided in a protruding shape ,
The convex portion (7) is formed in a circular shape in plan view, and has a thin end portion and a thick central portion in a longitudinal side view, and is formed between the convex portion (7) and the mask body (3). A fine recessed portion (25) is formed in the joint portion,
The central portion of the convex portion (7) is formed in a constricted shape having no flat surface, and the convex portion (7) is in point contact with the substrate (2),
A vapor deposition mask for organic EL elements, wherein a peripheral edge portion of the convex portion (7) is curved in an arc shape . For organic EL elements, a mask body (3) made of electrodeposited metal is provided with a number of vapor deposition holes (6) for forming a light emitting layer (5) on a substrate (2) independently in a vertically penetrating manner. A method of manufacturing a vapor deposition mask of
A first patterning step of providing a primary pattern resist (13) having a resist body (13a) on the surface of the matrix (10);
A first electroforming step of electroforming an electrodeposited metal on the matrix (10) to form a primary electrodeposition layer (14);
A second patterning step of providing a secondary pattern resist (18) having a circular opening (18b) on the upper surface of the resist body (13a);
A second electroforming step in which an electrodeposited metal is electroformed on the primary electrodeposition layer (14) to form a secondary electrodeposition layer (19) inseparably from the primary electrodeposition layer (14); ,
A peeling step of peeling the primary and secondary electrodeposition layers (14, 19) from the matrix (10);
Before and after the peeling step, and removing the primary and secondary pattern resists (13, 18),
In the second electroforming process, an electrodeposited metal is deposited on the primary electrodeposition layer (14) so as to overhang the resist pattern (18a) of the secondary pattern resist (18). The secondary electrodeposition layer (19) is inseparably formed integrally with the primary electrodeposition layer (14) by electroforming,
In the second electroforming step, the secondary electrodeposition layer (19) is curved in an arc shape so that the end portion is thin and the center portion is thick when viewed in a longitudinal side view, and the center portion is thick. It is formed to be a constricted shape without a flat surface,
With the removal of the resist body (13a) of the primary pattern resist (13), a vapor deposition through hole (6) is formed in the primary electrodeposition layer (14),
The secondary electrodeposition layer (19) formed in the circular opening (18b) of the secondary pattern resist (18) is made to be a convex part (7) for improving releasability from the substrate (2). Yes,
Along with the removal of the secondary pattern resist (18), a fine portion is formed at the junction between the secondary electrodeposition layer (19) as the convex portion (7) and the mask body (3) as the primary electrodeposition layer (14). A method for producing a vapor deposition mask for an organic EL element , wherein a recessed portion (25) is formed . An organic EL device in which a mask body (3) made of electrodeposited metal is provided with a large number of vapor deposition through holes (6) for forming a light emitting layer (5) on a substrate (2) independently in a vertically penetrating manner A method of manufacturing a vapor deposition mask for
A first patterning step of providing an etching resist (31) having a row of resist bodies (31a) long in the front-rear direction on the matrix (30);
An etching step of etching the surface of the mother die (30) over the gap of the resist body (31a) to form a concave groove (32);
After re-coated with the etching resist so as to fill the groove (32), a second patterning step of forming a pattern resist (34) having a number independent of the registration list body (34a),
An electroforming step of forming an electrodeposition layer (35) by electroforming an electrodeposition metal on the matrix (30) excluding the resist body (34a);
A resist removal step of removing the resist body (34a);
A peeling step of peeling the electrodeposition layer (35) from the matrix (30),
With the removal of the resist body (34a), the vapor deposition through hole (6) is formed in the electrodeposition layer (35), and the electrodeposition layer (35 formed by electroforming in the concave groove (32) of the mother die (30). ) Is a convex part (7) for improving releasability with respect to the substrate (2) . A method for producing a vapor deposition mask for an organic EL element, wherein: The periphery of the mask body (3) comprises a frame attaching step of attaching a metal frame (4), the frame attaching process, according to claim 2 or 3 wherein are to perform prior to peeling step The manufacturing method of the vapor deposition mask for organic EL elements .

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