JP4041649B2 - Electronic component mounting method and electronic component mounting body - Google Patents

Electronic component mounting method and electronic component mounting body Download PDF

Info

Publication number
JP4041649B2
JP4041649B2 JP2000326879A JP2000326879A JP4041649B2 JP 4041649 B2 JP4041649 B2 JP 4041649B2 JP 2000326879 A JP2000326879 A JP 2000326879A JP 2000326879 A JP2000326879 A JP 2000326879A JP 4041649 B2 JP4041649 B2 JP 4041649B2
Authority
JP
Japan
Prior art keywords
electronic component
bonding
bonding material
chip
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000326879A
Other languages
Japanese (ja)
Other versions
JP2002134559A (en
Inventor
英信 西川
一人 西田
一路 清水
修治 大野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2000326879A priority Critical patent/JP4041649B2/en
Priority to PCT/JP2001/005050 priority patent/WO2001097277A1/en
Priority to US10/311,476 priority patent/US7355126B2/en
Priority to KR10-2002-7016837A priority patent/KR100468929B1/en
Priority to CNB018112951A priority patent/CN1278402C/en
Priority to TW090114601A priority patent/TWI226085B/en
Publication of JP2002134559A publication Critical patent/JP2002134559A/en
Application granted granted Critical
Publication of JP4041649B2 publication Critical patent/JP4041649B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/731—Location prior to the connecting process
    • H01L2224/73101—Location prior to the connecting process on the same surface
    • H01L2224/73103—Bump and layer connectors
    • H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a mounting method and a mounting body of an electronic component is which a bonding material of the electronic component can be uniformly distributed in a bonding region of an electronic component in the case of bonding with a circuit forming body, which can increase reliability of joining and sealing. SOLUTION: Under the condition that the electronic component 1-1 is bonded with the circuit forming body 6-1 through the bonding material 5 including a resin and a bump 2 in the electronic component region 6a-1 is electrically connected with an electrode 7 of the circuit forming body, the electronic component 1-1 is boned with the circuit forming body 6-1 by thermo compression and the bonding material is hardened while a flowage of the joining material toward a periphery of the electronic component bonding region is limited by a flowage limiting part 303 of the bonding material in the electronic component bonding region.

Description

【０００１】
【発明の属する技術分野】
本発明は、基板などの回路形成体に半導体素子などの電子部品を少なくとも樹脂を含む接合材料により接合固定する電子部品の実装方法及びそれにより製造された電子部品実装体に関する。
【０００２】
【従来の技術】
従来、四角形のＩＣチップの接合面の電極上に形成されたバンプを回路基板の電極に接触させるとともに、ＩＣチップと回路基板との間に接合材料を配置して、接合材料によりＩＣチップを回路基板に接合保持させるようにしたものがある。
【０００３】
【発明が解決しようとする課題】
しかしながら、上記構造のものでは、四角形のＩＣチップを接合する回路基板のＩＣチップ接合領域で接合材料が不均一に流出する部分、例えば、電極間の配列の大きな隙間、又は、四角形の辺部分に電極が配列される場合に電極が配列されていない角部の隙間などにおいて、ＩＣチップを接合材料を介して回路基板に接合させるとき、ＩＣチップと回路基板との間に挟み込まれた接合材料が回路基板の電極間の上記隙間を通して 回路基板のＩＣチップ接合領域の周囲部分に不均一に流出するため、ＩＣチップ接合領域の中央部分では接合材料の密度が疎になりやすく、接合力及び封止力が低下してしまうことがある。
【０００４】
従って、本発明の目的は、上記問題を解決することにあって、電子部品と回路形成体との接合時に回路形成体の電子部品接合領域での接合材料の分布の均一化が図れ、接合及び封止の信頼性を高めることができる電子部品の実装方法及び電子部品実装体を提供することにある。
【０００５】
【課題を解決するための手段】
上記目的を達成するために、本発明は以下のように構成する。
【０００６】
本発明の第１態様によれば、少なくとも樹脂を含む接合材料を回路形成体又は電子部品に供給する工程と、
上記電子部品の接合面の複数の凸状電極と上記回路形成体の四角形の電子部品接合領域の電極とが電気的に接触可能なように上記接合材料を介して上記電子部品と上記回路形成体とを位置決めする位置決め工程と、
加熱及び加圧で上記電子部品を熱圧着して、上記電子部品の上記凸状電極と上記回路形成体の上記電極とが電気的に接触した状態で上記電子部品の上記接合面と上記回路形成体との間の上記接合材料を硬化させる本圧着工程とを備え、
上記本圧着工程において、上記回路形成体の上記電子部品接合領域で上記接合材料が不均一に流出する部分であってかつ上記回路形成体の上記四角形の電子部品接合領域の一列に配列された隣接電極間の間隔が他の隣接電極間の間隔より大きい広幅間隔部分に備えられることにより上記隣接電極と大略等間隔に配置されかつ上記電極と形状が大略同一でありかつ電気的接合を必要としない凸部である接合材料流動規制部材により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制することにより上記電子部品接合領域の全体において上記接合材料が大略均一に分布保持されるようにしたことを特徴とする電子部品の実装方法を提供する。
【０００７】
本発明の第２態様によれば、少なくとも樹脂を含む接合材料を回路形成体又は電子部品に供給する工程と、
上記電子部品の接合面の複数の電極上の複数のバンプと上記回路形成体の四角形の電子部品接合領域の電極とが電気的に接触可能なように上記接合材料を介して上記電子部品と上記回路形成体とを位置決めする位置決め工程と、
加熱及び加圧で上記電子部品を熱圧着して、上記電子部品の上記電極上の上記バンプと上記回路形成体の上記電極とが電気的に接触した状態で上記電子部品の上記接合面と上記回路形成体との間の上記接合材料を硬化させる本圧着工程とを備え、
上記本圧着工程において、上記回路形成体の上記電子部品接合領域で上記接合材料が不均一に流出する部分であってかつ上記回路形成体の上記四角形の電子部品接合領域の一列に配列された隣接電極間の間隔が他の隣接電極間の間隔より大きい広幅間隔部分に備えられることにより上記隣接電極と大略等間隔に配置されかつ上記電極と形状が大略同一でありかつ電気的接合を必要としない凸部である接合材料流動規制部材により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制することにより上記電子部品接合領域の全体において上記接合材料が大略均一に分布保持されるようにしたことを特徴とする電子部品の実装方法を提供する。
【０００８】
本発明の第３態様によれば、上記接合材料流動規制部材は、上記回路形成体の上記四角形の上記電子部品接合領域のうち対向する２対の辺のそれぞれに上記複数のバンプが形成されている場合にバンプが無いコーナー部に対応する上記回路形成体の上記電子部品接合領域のコーナー部に備えられかつ電気的接合を必要としない第２の凸部をさらに備えており、上記本圧着工程において、上記第２の凸部により、上記コーナー部における上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する第２の態様に記載の電子部品の実装方法を提供する。
【０００９】
本発明の第４態様によれば、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制することにより、上記電子部品接合領域の全体において上記接合材料が大略均一に分布保持されるとともに上記電子部品の側面を覆うフィレットを形成する第１又は２の態様に記載の電子部品の実装方法を提供する。
【００１０】
本発明の第５態様によれば、上記接合材料流動規制部材である上記凸部は、上記接合工程において、上記電子部品側の電気的に接続不要なダミーバンプである第３の態様に記載の電子部品の実装方法を提供する。
【００１１】
本発明の第６態様によれば、上記本圧着工程において、上記接合材料流動規制部材とは別の第２の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域の外側及び上記電子部品接合領域の周辺部に配置された有機膜により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する第２，３，５のいずれか１つの態様に記載の電子部品の実装方法を提供する。
【００１２】
本発明の第７態様によれば、上記接合工程前に、上記接合材料流動規制部材とは別の第３の接合材料流動規制部材としての有機膜が、上記回路形成体の上記電子部品接合領域の外側及び上記電子部品接合領域の周辺部に配置される流動規制部材配置工程をさらに備える第２，３，５のいずれか１つの態様に記載の電子部品の実装方法を提供する。
【００１３】
本発明の第８態様によれば、上記本圧着工程において、上記回路形成体の上記四角形の上記電子部品接合領域のうち中央に一列の上記複数の電極が配置されている場合に上記接合材料流動規制部材とは別の第４の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域の外側から上記中央の一列の上記複数の電極の近傍までに配置されたソルダーレジストの膜により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する第２，３，５〜７のいずれか１つの態様に記載の電子部品の実装方法を提供する。
【００１４】
本発明の第９態様によれば、上記回路形成体の上記四角形の上記電子部品接合領域のうち中央に一列の上記複数の電極が配置されている場合に上記接合材料流動規制部材とは別の第５の接合材料流動規制部材としてのソルダーレジストの膜が、上記回路形成体の上記電子部品接合領域の外側から上記中央の一列の上記複数の電極の近傍までに配置される流動規制部材配置工程をさらに備える第２，３，５〜７のいずれか１つの態様に記載の電子部品の実装方法を提供する。
【００１５】
本発明の第１０態様によれば、上記本圧着工程において、上記回路形成体の上記四角形の接合領域のうち対向する２辺にそれぞれ上記複数のバンプが列状に形成されている場合に、上記接合材料流動規制部材とは別の第６の接合材料流動規制部材として上記電子部品の上記電極と接合に必要な上記電極の接合部を除く、上記回路形成体の上記電子部品接合領域の外側及び上記電子部品接合領域の全面に配置された有機膜により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する第２，３，５〜９のいずれか１つの態様に記載の電子部品の実装方法を提供する。
【００１６】
本発明の第１１態様によれば、上記回路形成体の上記四角形の接合領域のうち対向する２辺にそれぞれ上記複数のバンプが列状に形成されている場合に、上記接合材料流動規制部材とは別の第７の接合材料流動規制部材としての有機膜が、上記電子部品の上記電極と接合に必要な上記電極の接合部を除く、上記回路形成体の上記電子部品接合領域の外側及び上記電子部品接合領域の全面に配置される流動規制部材配置工程をさらに備える第２，３，５〜９のいずれか１つの態様に記載の電子部品の実装方法を提供する。
【００１７】
本発明の第１２態様によれば、上記本圧着工程において、上記接合材料流動規制部材とは別の第８の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域の外側の周辺部に配置されたフィレット形成用凸部により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制して上記電子部品の側面を覆うフィレットを形成する第２，３，５〜１１のいずれか１つの態様に記載の電子部品の実装方法を提供する。
【００１８】
本発明の第１３態様によれば、上記接合材料流動規制部材とは別の第９の接合材料流動規制部材として備えられ、上記回路形成体の上記電子部品接合領域の外側の周辺部に配置されて上記電子部品の側面を覆うフィレットを形成するためのフィレット形成用凸部により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制して上記電子部品の側面を覆う上記フィレットを形成する第２，３，５〜１１のいずれか１つの態様に記載の電子部品の実装方法を提供する。
【００１９】
本発明の第１４態様によれば、上記フィレット形成用凸部は１層以上の膜より構成されている第１２又は１３の態様に記載の電子部品の実装方法を提供する。
【００２０】
本発明の第１５態様によれば、上記フィレット形成用凸部は、１層以上の基板ソルダーレジストの膜より構成されている第１２又は１３の態様に記載の電子部品の実装方法を提供する。
【００２１】
本発明の第１６態様によれば、上記フィレット形成用凸部は、上記回路形成体の上記電極と同じ構成でかつ上記電極より厚いダミー電極より構成されている第１２又は１３の態様に記載の電子部品の実装方法を提供する。
【００２２】
本発明の第１７態様によれば、上記本圧着工程において、上記接合材料流動規制部材とは別の第１０の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さの凸部により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する第２，３，５〜１６のいずれか１つの態様に記載の電子部品の実装方法を提供する。
【００２３】
本発明の第１８態様によれば、上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さの凸部を備えるようにした第２，３，５〜１６のいずれか１つの態様に記載の電子部品の実装方法を提供する。
【００２４】
本発明の第１９態様によれば、少なくとも樹脂を含む接合材料を回路形成体又は電子部品に供給する工程と、
上記電子部品の接合面の複数の電極上の複数のバンプと上記回路形成体の電子部品接合領域の電極とが電気的に接触可能なように上記接合材料を介して上記電子部品と上記回路形成体とを位置決めする位置決め工程と、
加熱及び加圧で上記電子部品を熱圧着して、上記電子部品の上記電極上の上記バンプと上記回路形成体の上記電極とが電気的に接触した状態で上記電子部品の上記接合面と上記回路形成体との間の上記接合材料を硬化させる本圧着工程とを備え、
上記本圧着工程において、接合材料流動規制部材として上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さでかつ上記回路形成体の上記電子部品接合領域の電気的配線に関与しないメッシュ状のダミー電極により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する電子部品の実装方法を提供する。
【００２５】
本発明の第２０態様によれば、少なくとも樹脂を含む接合材料を回路形成体又は電子部品に供給する工程と、
上記電子部品の接合面の複数の電極上の複数のバンプと上記回路形成体の電子部品接合領域の電極とが電気的に接触可能なように上記接合材料を介して上記電子部品と上記回路形成体とを位置決めする位置決め工程と、
加熱及び加圧で上記電子部品を熱圧着して、上記電子部品の上記電極上の上記バンプと上記回路形成体の上記電極とが電気的に接触した状態で上記電子部品の上記接合面と上記回路形成体との間の上記接合材料を硬化させる本圧着工程とを備え、
上記本圧着工程において、接合材料流動規制部材として上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さでかつ上記回路形成体の上記電子部品接合領域の電気的配線に関与せずかつ上記接合材料が貫通可能な貫通穴を有するダミー電極により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する電子部品の実装方法を提供する。
【００２６】
本発明の第２１態様によれば、第１〜２０のいずれか１つの態様に記載の電子部品の実装方法により製造された電子部品実装体を提供する。
【００２７】
本発明の第２２態様によれば、電子部品の接合面の複数の電極の複数のバンプを回路形成体の四角形の電子部品接合領域の電極に電気的に接触した状態で、少なくとも樹脂を含む接合材料を介して上記電子部品を上記回路形成体に接合させることにより構成される電子部品実装体であって、
上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する接合材料流動規制部材を、上記回路形成体の上記電子部品接合領域で上記接合材料が不均一に流出する部分であってかつ上記回路形成体の上記四角形の電子部品接合領域の一列に配列された隣接電極間の間隔が他の隣接電極間の間隔より大きい広幅間隔部分に備えられることにより上記隣接電極と大略等間隔に配置されかつ上記電極と形状が大略同一でありかつ電気的接合を必要としない凸部であることを特徴とする電子部品実装体を提供する。
【００２８】
本発明の第２３態様によれば、上記接合材料流動規制部材は、上記回路形成体の上記四角形の上記電子部品接合領域のうち対向する２対の辺のそれぞれに上記複数のバンプが形成されている場合にバンプが無いコーナー部に対応する上記回路形成体の上記電子部品接合領域のコーナー部に、電気的接合を必要とせず、かつ、上記コーナー部における上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する凸部をさらに備える第２２の態様に記載の電子部品実装体を提供する。
【００２９】
本発明の第２４態様によれば、上記電子部品接合領域の全体において上記接合材料が大略均一に分布保持されるとともに上記電子部品の側面を覆うフィレットが形成されている第２２の態様に記載の電子部品実装体を提供する。
【００３０】
本発明の第２５態様によれば、上記接合材料流動規制部材である上記凸部は、上記電子部品側の電気的に接続不要なダミーバンプである第２３の態様に記載の電子部品実装体を提供する。
【００３１】
本発明の第２６態様によれば、上記接合材料流動規制部材とは別の第１１の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域の外側及び上記電子部品接合領域の周辺部に、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する有機膜を備える第２２〜２５のいずれか１つの態様に記載の電子部品実装体を提供する。
【００３２】
本発明の第２７態様によれば、上記回路形成体の上記電子部品接合領域が四角形でありかつ上記四角形の上記電子部品接合領域のうち中央に一列の上記複数の電極が配置されている場合に上記接合材料流動規制部材とは別の第１２の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域の外側から上記中央の一列の上記複数の電極の近傍までの部分に、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制するソルダーレジストの膜を備える第２２〜２６のいずれか１つの態様に記載の電子部品実装体を提供する。
【００３３】
本発明の第２８態様によれば、上記回路形成体の上記四角形の接合領域のうち対向する２辺にそれぞれ上記複数のバンプが列状に形成されている場合に、上記接合材料流動規制部材とは別の第１３の接合材料流動規制部材として上記電子部品の上記電極と接合に必要な上記電極の接合部を除く、上記回路形成体の上記電子部品接合領域の外側及び上記電子部品接合領域の全面に、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する有機膜を備える第２２〜２７のいずれか１つの態様に記載の電子部品実装体を提供する。
【００３４】
本発明の第２９態様によれば、上記接合材料流動規制部材とは別の第１４の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域の外側の周辺部に、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制して上記電子部品の側面を覆うフィレットを形成するフィレット形成用凸部を備える第２２〜２８のいずれか１つの態様に記載の電子部品実装体を提供する。
【００３５】
本発明の第３０態様によれば、上記フィレット形成用凸部は１層以上の膜より構成されている第２９の態様に記載の電子部品実装体を提供する。
【００３６】
本発明の第３１態様によれば、上記フィレット形成用凸部は、１層以上の基板ソルダーレジストの膜より構成されている第２９の態様に記載の電子部品実装体を提供する。
【００３７】
本発明の第３２態様によれば、上記フィレット形成用凸部は、上記回路形成体の上記電極と同じ構成でかつ上記電極より厚いダミー電極より構成されている第２９の態様に記載の電子部品実装体を提供する。
【００３８】
本発明の第３３態様によれば、上記接合材料流動規制部材とは別の第１５の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さでかつ上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する凸部を備える第２２〜３２のいずれか１つの態様に記載の電子部品実装体を提供する。
【００３９】
本発明の第３４態様によれば、電子部品の接合面の複数の電極の複数のバンプを回路形成体の電子部品接合領域の電極に電気的に接触した状態で、少なくとも樹脂を含む接合材料を介して上記電子部品を上記回路形成体に接合させることにより構成される電子部品実装体であって、
上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する接合材料流動規制部材を、上記回路形成体の上記電子部品接合領域で上記接合材料が不均一に流出する部分に備え、
上記接合材料流動規制部材は、上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さでかつ上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制しかつ上記回路形成体の上記電子部品接合領域の電気的配線に関与しないメッシュ状のダミー電極である電子部品実装体を提供する。
【００４０】
本発明の第３５態様によれば、電子部品（１）の接合面の複数の電極（４）の複数のバンプ（２）を回路形成体（６）の電子部品接合領域の電極（７）に電気的に接触した状態で、少なくとも樹脂を含む接合材料（５）を介して上記電子部品を上記回路形成体に接合させることにより構成される電子部品実装体であって、
上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する接合材料流動規制部材（３０３，３１３，３１９，３２９，３３９，３５５，３６９，３６０）を、上記回路形成体の上記電子部品接合領域で上記接合材料が不均一に流出する部分に備え、
上記接合材料流動規制部材は、上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さでかつ上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制しかつ上記回路形成体の上記電子部品接合領域の電気的配線に関与せずかつ上記接合材料が貫通可能な貫通穴を有するダミー電極である電子部品実装体を提供する。
【００４１】
【発明の実施の形態】
以下に、本発明にかかる実施の形態を図面に基づいて詳細に説明する。なお、各平面図において各バンプ及びダミーバンプは、簡略化のため、四角形で示すが、実際の形状はこれに限られるものではない。
【００４２】
なお、この明細書で回路形成体とは、樹脂基板、紙−フェノール基板、セラミック基板、フィルム基板、ガラス・エポキシ（ガラエポ）基板、フィルム基板などの回路基板、単層基板若しくは多層基板などの回路基板、部品、筐体、又は、フレームなど、回路が形成されている対象物を意味する。
【００４３】
（第１実施形態）
本発明の第１実施形態にかかる電子部品の実装方法及びその方法により製造される電子部品実装体の一例としての、ＩＣチップの実装方法及びその方法により製造されるＩＣチップ実装体を図１〜図６基づいて説明する。図１（Ａ），（Ｂ）は第１実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び平面図であり、図２（Ａ），（Ｂ）は圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面図及びＩＣチップを透視して回路基板上での接合材料の動きを示す平面図であり、図３は圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。また、図４（Ａ），（Ｂ）は第１実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の上記回路基板の側面図及び平面図であり、図５（Ａ），（Ｂ）は図２の従来例の圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面図及びＩＣチップを透視して回路基板上での接合材料の動きを示す平面図であり、図６は図２の従来例の圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【００４４】
第１実施形態では、図１（Ａ），（Ｂ）に示すように、回路形成体の一例としての回路基板６−１の正方形のＩＣチップ接合領域６ａ−１に接合される、電子部品の一例としての正方形のＩＣチップ１−１には、その四隅のコーナー部付近を除く４辺の各辺の辺部近傍に一列のバンプ２２，…，２２を有する場合、回路基板６−１のＩＣチップ接合領域６ａ−１の四隅の各コーナー部付近、すなわち、ＩＣチップ１−１の元々バンプの無い部分に対応する部分に、接合材料流動規制部材の一例である凸部としてのダミー電極３０３を形成して、ダミー電極３０３により接合材料５の流動規制を行うものである。
【００４５】
なお、本明細書において、ＩＣチップ接合領域とは、ＩＣチップを接合すべき回路基板上の領域であって、ＩＣチップと同一形状又はＩＣチップより若干大きい領域のことを意味する。
【００４６】
従来では、図４（Ａ），（Ｂ）に示すように、回路基板７０６の正方形のＩＣチップ接合領域７０６ａの各辺の辺部近傍のそれぞれにおいて電極７０７，…，７０７上に電極７０７，…，７０７が大略等間隔に一列に配列されている一方、回路基板７０６のＩＣチップ接合領域７０６ａの四隅の各コーナー部付近には電極７０７が全く無いと仮定する。このように電極７０７，…，７０７がＩＣチップ７０１に配置されている状態で、接合材料７０５を回路基板７０６に供給したのち、回路基板７０６の接合領域７０６ａの電極７０７にバンプ７０２が形成されたＩＣチップ７０１の上記接合面と上記回路基板７０６との間に上記接合材料７０５を介して、上記ＩＣチップ７０１の上記電極７０４上の上記バンプ７０２と上記回路基板７０６の電極７０７とが電気的に接触するように接合し、基台７１０上に上記回路基板７０６を載置し、ＩＣチップ７０１に加熱された押圧部材７０８を当接させて加圧することにより、加熱及び加圧状態で上記ＩＣチップ７０１を圧着して上記ＩＣチップ７０１の上記接合面と上記回路基板７０６の上記接合領域７０６ａとの間の上記接合材料７０５を硬化させる。このような場合、ヒーターにより加熱しながら本圧着を行うとき、ＩＣチップ７０１と基板７０６との間の接合材料７０５について、基板７０６のＩＣチップ接合領域７０６ａの中央部内で、ＩＣチップ７０１の接合面に形成されたＳｉＮのパッシベーション膜５０９と基板７０６のＩＣチップ接合領域７０６ａとの間での接合材料７０５の流動速度をＳＰ１とする。一方、基板７０６のＩＣチップ接合領域７０６ａの周辺部で、基板７０６のＩＣチップ接合領域７０６ａの電極表面のＡｕメッキとＩＣチップ７０１との間での接合材料７０５の流動速度をＳＰ２とすると、ＩＣチップ接合領域７０６ａの周辺部の流動速度ＳＰ２は上記ＩＣチップ接合領域７０６ａの中央部内の流動速度ＳＰ１より大きくなり、かつ、基板７０６のＩＣチップ接合領域７０６ａの周辺部、特に、大略等間隔に配列されている電極７０７，…，７０７が配置されている辺部近傍よりも、電極７０７が欠けている位置すなわち各コーナー部付近７０３から接合材料７０５がより大きな流動速度でＩＣチップ接合領域７０６ａの外側に基板沿いに流れ出して接合材料７０５の密度が低下してしまい、ＩＣチップ７０１の側面を封止する樹脂量が不足となり、ＩＣチップ７０１の側面を封止するフィレットが小さくなり、ＩＣチップ接合領域の周辺部でのＩＣチップ７０１と接合材料７０５との間で剥離が発生したり、基板７０６の電極７０７と接合材料７０５との間で剥離が発生したりすることになる。
【００４７】
このような剥離の発生を防止するため、第１実施形態では、上記接合材料供給工程の前に、図１（Ａ），（Ｂ）に示すように、正方形のＩＣチップ１−１の電極７の無い各コーナー部付近において、ダミー電極３０３を１個又は複数個配置する。ここで、コーナー部付近にダミー電極３０３を１個又は複数個配置するとは、図４６に示すように上記ＩＣチップ１−１の上記接合面の辺部近傍の一列の電極７，…，７の配置列の延長線Ｌ１及びＬ２が大略９０度でＩＣチップ１−１の上記接合面のコーナー部で交差するとき、交差領域の外側領域Ｒ１内に３０３Ａ，３０３Ｂのように配置したり、又は、各列の最もコーナー部に近い電極７を通り上記延長線Ｌ１，Ｌ２とそれぞれ直交する基準線Ｌ３，Ｌ４で囲まれた領域Ｒ２内に３０３Ａ，３０３Ｂ，３０３Ｃのように配置することを意味する。この結果、回路基板６−１の正方形のＩＣチップ接合領域６ａ−１の各コーナー部付近においても電極３０３が存在することになり、全ての辺部近傍及びコーナー部付近において大略均一に電極７，…，７又はダミー電極３０３，…，３０３がそれぞれ配列されている状態となる。
【００４８】
なお、各ダミー電極３０３は各電極７と同様に形成されることが好ましいが、他の方法で形成するようにしてもよい。
【００４９】
このように電極７，…，７又はダミー電極３０３，…，３０３の列が回路基板６−１の正方形のＩＣチップ接合領域６ａ−１の各辺部近傍に形成されている状態で、接合材料供給工程において、ＩＣチップ１−１の接合領域又は回路基板６−１のＩＣチップ接合領域６ａ−１の少なくともいずれか一方に、少なくとも絶縁性の熱硬化性樹脂を含む接合材料５を供給する。接合材料５の供給方法としては、接合材料５が液体の場合には塗布することにより行い、接合材料５がシート状になどの固体の場合には載置又は貼り付けることにより行う。
【００５０】
接合材料の一例としては、液体状の場合には異方性導電ペースト又は封止樹脂ペーストなどがあり、固体状の場合にはシート状の異方性導電膜又は封止樹脂フィルムなどがある。
【００５１】
次いで、接合工程において、接合材料５を間に挟んで回路基板６−１のＩＣチップ接合領域６ａ−１にＩＣチップ１−１の接合面を重ね合わせて、上記各電極４上にバンプ２が形成されたＩＣチップ１−１の上記接合面と上記回路基板６−１のＩＣチップ接合領域６ａ−１との間に上記接合材料５を介して、上記ＩＣチップ１−１の上記各電極４上の上記バンプ２と上記回路基板６−１の各電極７とが電気的に接触するように位置決めしたのち接合する。この接合工程は、回路基板６−１が基台１０上に載置された状態で行うようにしてもよいし、別の個所で接合材料５を介してＩＣチップ１−１が回路基板６−１に重ね合わされて接合工程を行ったのち、本圧着工程において、接合材料５を介してＩＣチップ１−１が重ね合わされている回路基板６−１が基台１０上に載置されるようにしてもよい。
【００５２】
次いで、本圧着工程において、押圧部材８をＩＣチップ１−１に当接させて、接合材料５を介してＩＣチップ１−１が重ね合わされている回路基板６−１が載置された基台１０に向けて押圧部材８から押圧力を作用させるとともに、押圧部材８内に内蔵されたヒータの熱を押圧部材８からＩＣチップ１−１に伝達する。この結果、所定温度を加えつつ所定の加圧力を作用させて、ＩＣチップ１−１の接合面を回路基板６−１のＩＣチップ接合領域６ａ−１に押圧することにより、ＩＣチップ１−１の接合面の各電極４上のバンプ２が回路基板６−１のＩＣチップ接合領域６ａ−１内の各電極７に接触する。このとき、上記ＩＣチップ１−１の上記接合面と上記回路基板６−１のＩＣチップ接合領域６ａ−１との間の上記接合材料５を、上記ＩＣチップ１−１の上記接合面の中央部から周辺部へ向けて押し出そうとする。ここで、上記したように電極７が欠けている位置すなわちコーナー部付近にダミー電極３０３が配置されている結果として、ＩＣチップ１−１の上記接合面の各コーナー部付近においても、いずれの辺の辺部近傍と同様に電極７，…，７及びダミー電極３０３が大略等間隔に配置されており、図５（Ｂ）に矢印で示すように各辺の辺部近傍及び各コーナー部付近においても同様に接合材料５の中央部から周辺部へ向けての流動が規制されて、基板６−１のＩＣチップ接合領域６ａ−１の中央部での流動速度ＳＰ１と、基板６−１のＩＣチップ接合領域６ａ−１の周辺部での流動速度ＳＰ２とが大略同じになるようにして、ＩＣチップ接合領域６ａ−１の中央部と周辺部でのＩＣチップ１−１と接合材料５との密着性を増加させるとともに、基板６−１の電極７又はダミー電極３１３と接合材料５との間での密着性を増加させることにより、上記剥離を防止できるようにし、回路基板６−１の少なくともＩＣチップ接合領域６ａ−１全体において接合材料５が大略均一に分布保持されて上記熱により硬化させられてＩＣチップ実装体を製造することができる。すなわち、上記本圧着工程において、上記ＩＣチップ１−１に備えたダミー電極３０３，…，３０３により、回路基板６−１の上記ＩＣチップ接合領域６ａ−１の中央部から周辺部特にコーナー部への圧着時の上記接合材料５の不均一な押し出しを規制することができる。
【００５３】
上記接合材料流動規制部材の例としての各ダミー電極３０３の高さは、電極７の高さと大略同一であることが好ましい。なお、通常、基板の電極高さは、多層基板、例えば、松下電子部品株式会社製のアリブ（ＡＬＩＶＨ）のガラエポ基板では、一例として１２〜２５μｍ（Ａｕ／Ｎｉメッキ含む）であり、セラミック基板では、一例として２〜１５μｍ（Ａｕ／Ｎｉメッキ含む）である。また、各ダミー電極３０３は耐熱性を有することが好ましい。ここで、耐熱性の一例としては、例えば、リフロー工程が不要な場合には２００℃で２０秒、リフロー工程を通過させる場合には２５０℃で１０秒程度の熱に耐える性質を持つことを意味する。
【００５４】
また、接合材料５としては、絶縁性の熱硬化性樹脂のみから構成するものに限らず、絶縁性樹脂中に導電性粒子を含む導電性材料を含むようにしてもよいし、無機フィラーを含むようにしてもよい。このように接合材料５に、導電性材料又は無機フィラーを含める場合においても、上記接合材料流動規制部材により、圧着時に樹脂の流動がＩＣチップ１−１の接合面内で均一化されて、導電性材料又は無機フィラーを均一に配置することができる。これに対して、上記接合材料流動規制部材が無い場合には、無機フィラーが添加された樹脂においては、圧着時の樹脂の流動が不均一になると無機フィラーが粗密になり、部分的に樹脂物性が異なることにより品質が劣化しやすい場合があり、導電性材料が添加された樹脂においては、圧着時の樹脂の流動が不均一になると、導電性材料が粗密になり部分的にショートを生じる場合がある。
【００５５】
なお、上記説明においては、接合工程においてＩＣチップ１−１の各バンプ２と回路基板６−１の各電極７とが接触するように記載したが、これに限られるものではなく、接合工程ではＩＣチップ１−１の各バンプ２と回路基板６−１の各電極７とが接触せず、本圧着工程で初めてＩＣチップ１−１の各バンプ２と回路基板６−１の各電極７とが接触するようにしてもよい。
【００５６】
上記第１実施形態によれば、回路基板６−１の正方形ＩＣチップ接合領域６ａ−１において、その四隅のコーナー部を除く４辺の各辺の辺部近傍に大略等間隔に一列の電極７，…，７を有するものであって、回路基板６−１のＩＣチップ接合領域６ａ−１の上記辺の辺部近傍での電極７の無いコーナー部にダミー電極３０３，…，３０３を形成することによって、電極７，…，７の配列状態をＩＣチップ１−１の各辺の辺部近傍及び各コーナー部付近とも大略同一にすることができて、上記圧着工程での上記ＩＣチップ１−１の上記接合領域と上記回路基板６−１のＩＣチップ接合領域６ａ−１との間の上記接合材料５の中央部から周辺部のコーナー部への接合材料５の流動時にダミー電極３０３が接合材料流動規制部材として機能し、基板６−１のＩＣチップ接合領域６ａ−１の中央部での流動速度ＳＰ１と、基板６−１のＩＣチップ接合領域６ａ−１の周辺部での流動速度ＳＰ２とが大略同じになり、ＩＣチップ接合領域６ａ−１の各辺の辺部近傍及び各コーナー部付近での上記接合材料５の中央部から周辺部のコーナー部への流動の大略均一化を図り、かつ、ＩＣチップ１−１の接合面言い替えれば上記回路基板６−１のＩＣチップ接合領域６ａ−１内での接合材料５の分布の均一化が図れる。このように、ＩＣチップ１−１の接合面内及び回路基板６−１のＩＣチップ接合領域６ａ−１内での接合材料５の分布の均一化が図れる結果として接合材料５の密度の低下を防止することができて、ＩＣチップ接合領域６ａ−１の中央部と周辺部、特にコーナー部、でのＩＣチップ１−１と接合材料５との密着性を増加させるとともに、基板６−１の電極７又はダミー電極３０３と接合材料５との間での密着性を増加させることにより、上記剥離を防止できるようにして、接合及び封止の信頼性を高めることができる。
【００５７】
なお、上記コーナー部に配置されたダミー電極３０３と，そのダミー電極３０３に隣接する電極７，７との配置間隔は電極７，…，７の配置間隔と大略同一にすれば、４つの辺部近傍からコーナー部にかけて同様に電極７，…，７が形成されているような状態となり、上記接合材料５の中央部から周辺部への流動の大略均一化をより一層図ることができ、かつ、回路基板６−１のＩＣチップ接合領域６ａ−１内での接合材料５の分布のより一層の均一化を図ることができる。しかしながら、これに限られるものではなく、全く上記ダミー電極３０３，…，３０３が存在しない場合よりも均一性を高めるため、ダミー電極３０３と，そのダミー電極３０３に隣接する電極７，７との配置間隔は、電極７，…，７の配置間隔より大きくしてもよい。
【００５８】
（第２実施形態）
本発明の第２実施形態にかかる電子部品の実装方法及びその方法により製造される電子部品実装体の一例としての、ＩＣチップの実装方法及びその方法により製造されるＩＣチップ実装体を図７〜図１２に基づいて説明する。図７（Ａ）及び（Ｂ）は第２実施形態にかかるＩＣチップの実装方法の接合工程前の上記ＩＣチップの側面図及び裏面図であり、図８（Ａ）は接合工程前の回路基板の側面図であり、図８（Ｂ）は圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。また、図９は上記圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。また、図１０（Ａ）及び（Ｂ）は第２実施形態を説明するための従来例にかかる電子部品の実装方法の接合工程前のＩＣチップの側面図及び裏面図であり、図１１（Ａ）は図１０の従来例の接合工程前の回路基板の側面図であり、図１１（Ｂ）は図１０の従来例の圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。また、図１２は図１０の従来例の上記圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【００５９】
上記ＩＣチップの実装方法は、図７に示すように、四角形すなわち正方形又は長方形のＩＣチップ１−２（図７では正方形のＩＣチップ１−２）の接合面において、その四隅のコーナー部を除く４辺の各辺部の端縁近傍部分に各辺と大略平行にかつ大略等間隔に一列のバンプ２，…，２を有するものであって、ＩＣチップ１−２の接合面の上記辺部近傍のうちのバンプ２の無い箇所（図７（Ｂ）ではＩＣチップ１−２の４辺のうちの上下の２辺及び左右の２辺の辺部近傍のうちのバンプ２の無い箇所）に接合材料流動規制部材の一例としてのダミーバンプ３を形成して、ダミーバンプ３により接合材料５の流動規制を行うものである。一方、基板側においても、図８に示すように、上記四角形すなわち正方形又は長方形のＩＣチップ１−２（図７では正方形のＩＣチップ１−２）の接合面に対応する回路基板６−２の四角形すなわち正方形又は長方形のＩＣチップ接合領域６ａ−２（図７では正方形のＩＣチップ接合領域６ａ−２）において、その四隅のコーナー部を除く４辺の各辺部の端縁近傍部分に各辺と大略平行にかつ大略等間隔に一列の電極７，…，７を有するものであって、ＩＣチップ接合領域６ａ−２の上記辺部近傍のうちの電極７の無い箇所（図８（Ｂ）ではＩＣチップ接合領域６ａ−２の４辺のうちの上下の２辺の辺部近傍のうちの電極７の無い箇所（ダミーバンプ３が形成される箇所）及び左右の２辺の辺部近傍のうちの電極７の無い箇所（ダミーバンプ３が形成される箇所））に接合材料流動規制部材の一例である凸部としてのダミー電極３１３を形成して、ダミー電極３１３により接合材料５の流動規制を行うものである。
【００６０】
従来では、図１０及び図１１に示すように、正方形のＩＣチップ７０１の対向する２辺（図１０（Ｂ）では上下の２辺及び左右の２辺）の辺部近傍のそれぞれにおいて、電極７０４，…，７０４上にバンプ７０２，…，７０２が大略等間隔に配列されている中でバンプ７０２が欠けている位置７０３、言い換えれば、隣接するバンプ７０２，７０２との間隔が他の間隔より大きく離れている広幅間隔部分７０３があるとともに、図１１（Ａ）に示すように、基板７０６側にも上記広幅間隔部分７０３に対応する位置に電極７０７が無く、隣接する電極７０７，７０７との間隔が他の間隔より大きく離れている広幅間隔部分があると仮定する。このようにバンプ７０２，…，７０２がＩＣチップ７０１に配置されているとともに電極７０７，…，７０７が基板７０６に配置されている状態で、接合材料７０５を回路基板７０６に供給したのち、図１１（Ｂ）及び図１２に示すように、接合面の電極７０４上にバンプ７０２が形成されたＩＣチップ７０１の上記接合面と上記回路基板７０６のＩＣチップ接合領域７０６ａとの間に上記接合材料７０５を介して、上記ＩＣチップ７０１の上記電極７０４上の上記バンプ７０２と上記回路基板７０６の電極７０７とが電気的に接触するように接合し、基台７１０上に上記回路基板７０６を載置し、ＩＣチップ７０１に加熱された押圧部材７０８を当接させて加圧することにより、加熱及び加圧状態で上記ＩＣチップ７０１を圧着して上記ＩＣチップ７０１の上記接合面と上記回路基板７０６のＩＣチップ接合領域７０６ａとの間の上記接合材料７０５を硬化させる。このような場合、大略等間隔に配列されているバンプ７０２，…，７０２間の隙間よりも、バンプ７０２が欠けている広幅間隔部分７０３及び大略等間隔に配列されている電極７０７，…，７０７間の隙間よりも、電極７０７が欠けている広幅間隔部分から接合材料７０５が上記ＩＣチップ７０１の上記接合面及び回路基板７０６のＩＣチップ接合領域７０６ａの外側の外周部に大きく流れ出し、接合材料７０５の密度が低下することになる。この結果、図１２に示すように、ＩＣチップ７０１の側面を封止する樹脂量が不足となり、ＩＣチップ７０１の側面を封止するフィレットが小さく又は全く無くなり、ＩＣチップ接合領域７０６ａの周辺部でのＩＣチップ７０１と接合材料７０５との間で剥離が発生したり、基板７０６の電極７０７と接合材料７０５との間で剥離が発生したりすることになる。
【００６１】
このような剥離を防止するため、第２実施形態では、上記接合材料供給工程の前に、図７（Ａ），（Ｂ）に示すように、ＩＣチップ１−２の４辺のうちの対向する２辺（図７（Ｂ）では上下の２辺及び左右の２辺）の辺部近傍のそれぞれにおいて、バンプ２，…，２が大略等間隔に配列されている中でバンプ２が欠けている広幅間隔部分（図１０（Ｂ）及び図１１（Ｂ）の上下の２辺及び左右の２辺の７０３参照）、言い換えれば、隣接するバンプ２，２との間隔が他の間隔より大きく離れている位置にダミーバンプ３を他のバンプ２と同様に形成して大略等間隔にバンプ２が配列されているようにする。この結果、ＩＣチップ１−２の上記対向する各２辺（図７（Ｂ）では上下の２辺）が、各２辺の辺部近傍のそれぞれにおいてバンプ２が欠けることなくバンプ２，…，２が大略等間隔に配列されている状態と同様な状態となる。
【００６２】
一方、基板側においても、上記接合材料供給工程の前に、図８（Ａ），（Ｂ）に示すように、回路基板６−２のＩＣチップ接合領域６ａ−２の４辺のうちの互いに対向する２辺（図８（Ｂ）では上下の２辺及び左右の２辺）の辺部近傍のそれぞれにおいて、電極７，…，７が大略等間隔に配列されている中で電極７が欠けている広幅間隔部分（図１０（Ｂ）及び図１１（Ｂ）の上下の２辺及び左右の２辺の７０３参照）、言い換えれば、隣接する電極７，７との間隔が他の間隔より大きく離れている位置にダミー電極３１３を他の電極７と例えば同様に形成して大略等間隔に電極７が配列されているようにする。この結果、回路基板６−２のＩＣチップ接合領域６ａ−２の上記対向する各２辺（図８（Ｂ）では上下の２辺及び左右の２辺）が、各辺の辺部近傍のそれぞれにおいて電極７が欠けることなく電極７，…，７が大略等間隔に配列されている状態と同様な状態となる。
【００６３】
なお、各バンプ２及び各ダミーバンプ３が形成される方法は、図４７に示すバンプ形成方法などがある。図７（Ａ），（Ｂ）のＩＣチップ１−２に各バンプ２及び各ダミーバンプ３を形成する一例について説明する。ＩＣチップ１−２に相当するＩＣチップ４０１においてＩＣチップ４０１のＡｌパッド電極４０４（電極４に相当）にワイヤボンディング装置により図４７（Ａ）〜図４７（Ｆ）のごとき動作によりバンプ（突起電極）４０２（各バンプ２及び各ダミーバンプ３に相当）を形成する。すなわち、図４７（Ａ）でホルダ１９３から突出したワイヤ１９５の下端にボール１９６を形成し、図４７（Ｂ）でワイヤ１９５を保持するホルダ１９３を下降させ、ボール１９３をＩＣチップ４０１の電極４０４に接合して大略バンプ４０２の形状を形成し、図４７（Ｃ）でワイヤ１９５を下方に送りつつホルダ１９３の上昇を開始し、図４７（Ｄ）に示すような大略四角形のループ１９９にホルダ１９３を移動させて図４７（Ｅ）に示すようにバンプ４０２の上部に湾曲部１９８を形成し、引きちぎることにより図４７（Ｆ）に示すようなバンプ４０２を形成する。あるいは、図４７（Ｂ）でワイヤ１９５をホルダ１９３でクランプして、ホルダ１９３を上昇させて上方に引き上げることにより、金ワイヤ１９５を引きちぎり、図４７（Ｇ）のようなバンプ４０２の形状を形成するようにしてもよい。このように、ＩＣチップ４０１の各電極４０４にバンプ４０２を形成した状態を図４７（Ｂ）に示す。
【００６４】
このようにバンプ２，…，２及び電極７，…，７が形成されている状態で、接合材料供給工程において、ＩＣチップ１−２の接合面又は回路基板６−２のＩＣチップ接合領域６ａ−２の少なくともいずれか一方に、少なくとも絶縁性の熱硬化性樹脂を含む接合材料５を供給する。接合材料５の供給方法としては、接合材料５が液体の場合には塗布することにより行い、接合材料５がシート状になどの固体の場合には載置又は貼り付けることにより行う。
【００６５】
接合材料の一例としては、液体状の場合には異方性導電ペースト又は封止樹脂ペーストなどがあり、固体状の場合にはシート状の異方性導電膜又は封止樹脂フィルムなどがある。
【００６６】
次いで、接合工程において、接合材料５を間に挟んで回路基板６−２のＩＣチップ接合領域６ａ−２にＩＣチップ１−２の接合面を重ね合わせて、上記各電極４上にバンプ２が形成されたＩＣチップ１−２の上記接合面と上記回路基板６−２のＩＣチップ接合領域６ａ−２との間に上記接合材料５を介して、上記ＩＣチップ１−２の上記各電極４上の上記バンプ２と上記回路基板６−２の各電極７とが電気的に接触するように位置決めしたのち接合する。この接合工程は、回路基板６−２が基台１０上に載置された状態で行うようにしてもよいし、別の個所で接合材料５を介してＩＣチップ１−２が回路基板６−２に重ね合わされて接合工程を行ったのち、本圧着工程において、接合材料５を介してＩＣチップ１−２が重ね合わされている回路基板６−２が基台１０上に載置されるようにしてもよい。
【００６７】
次いで、本圧着工程において、押圧部材８をＩＣチップ１−２に当接させて、接合材料５を介してＩＣチップ１−２が重ね合わされている回路基板６−２が載置された基台１０に向けて押圧部材８から押圧力を作用させるとともに、押圧部材８内に内蔵されたヒータの熱を押圧部材８からＩＣチップ１−２に伝達する。この結果、所定温度を加えつつ所定の加圧力を作用させて、ＩＣチップ１−２の接合面を回路基板６−２のＩＣチップ接合領域６ａ−２に押圧することにより、ＩＣチップ１−２の接合面の各電極４上のバンプ２が回路基板６−２のＩＣチップ接合領域６ａ−２内の各電極７に接合工程時よりもさらに接触する。このとき、上記ＩＣチップ１−２の上記接合面と上記回路基板６−２のＩＣチップ接合領域６ａ−２との間の上記接合材料５を、上記ＩＣチップ１−２の上記接合面の中央部から周辺部へ向けて押し出そうとする。ここで、上記したようにバンプ２が欠けている広幅間隔部分にダミーバンプ３及び電極７が欠けている広幅間隔部分にダミー電極３１３が配置されている結果として、ＩＣチップ１−２の上記接合面言い替えれば基板６−２のＩＣチップ接合領域６ａ−２の各辺の辺部近傍においては、いずれの辺の辺部近傍でも同様にバンプ２，…，２及びダミーバンプ３及び電極７，…，７及びダミー電極３１３が大略等間隔に配置されており、図８（Ｂ）に矢印で示すように各辺の辺部近傍において同様に接合材料５の中央部から周辺部へ向けての流動が規制されて、不均一に接合材料５が流動するのを防止し、少なくともＩＣチップ１−２の接合面及び回路基板６−２のＩＣチップ接合領域６ａ−２の全体において接合材料５が大略均一に分布保持されて上記熱により硬化させられてＩＣチップ実装体を製造することができる。すなわち、上記本圧着工程において、上記ＩＣチップ１−２に備えられたダミーバンプ３及び回路基板６−２に備えられたダミー電極３１３により、上記ＩＣチップ１−２の上記接合面言い替えれば基板６−２のＩＣチップ接合領域６ａ−２の中央部から周辺部への圧着時の上記接合材料５の不均一な押し出しを規制することができる。
【００６８】
上記接合材料流動規制部材の例としての各ダミーバンプ３の高さは、ＩＣチップ１−２と回路基板６−２との接合後のＩＣチップ１−２と回路基板６−２との間の間隔の１０％〜３０％が好ましく、一例として２０％が好ましい。具体的な数値例として、接合後のＩＣチップ１−２と回路基板６−２との間の間隔の高さ寸法が３０μｍ〜４０μｍのとき、ダミーバンプ３の高さは７μｍ程度とする。
【００６９】
各ダミーバンプ３としては耐熱性を有するものが好ましい。耐熱性の一例としては、例えば、リフロー工程が不要な場合には２００℃で２０秒、リフロー工程を通過させる場合には２５０℃で１０秒程度の熱に耐える性質を意味する。
【００７０】
また、回路基板６−２のダミー電極３１３の高さは、電極７の高さと大略同一であることが好ましい。
【００７１】
また、接合材料５としては、絶縁性の熱硬化性樹脂のみから構成するものに限らず、絶縁性樹脂中に導電性粒子を含む導電性材料を含むようにしてもよいし、無機フィラーを含むようにしてもよい。このように接合材料５に、導電性材料又は無機フィラーを含める場合においても、ダミーバンプ３及びダミー電極３１３により、圧着時に樹脂の流動がＩＣチップ１−２の接合面内で均一化されて、導電性材料又は無機フィラーを均一に配置することができる。これに対して、ダミーバンプ３及びダミー電極３１３が無い場合には、無機フィラーが添加された樹脂においては、圧着時の樹脂の流動が不均一になると無機フィラーが粗密になり、部分的に樹脂物性が異なることにより品質が劣化しやすい場合があり、導電性材料が添加された樹脂においては、圧着時の樹脂の流動が不均一になると、導電性材料が粗密になり部分的にショートを生じる場合がある。
【００７２】
なお、上記説明においては、接合工程においてＩＣチップ１−２の各バンプ２と回路基板６−２の各電極７とが接触するように記載したが、これに限られるものではなく、接合工程ではＩＣチップ１−２の各バンプ２と回路基板６−２の各電極７とが接触せず、本圧着工程で初めてＩＣチップ１−２の各バンプ２と回路基板６−２の各電極７とが接触するようにしてもよい。
【００７３】
また、上記第２実施形態において、電極７が欠けている広幅間隔部分、言い換えれば、隣接電極７，７間の間隔が他の隣接電極７，７間の間隔より大きい広幅間隔部分に、ダミー電極３１３を形成する場合、隣接電極７，７間の間隔が間隔が必ずしも大略均一ではない場合には、隣接電極７，７間の間隔が許容値を越えている部分にのみダミー電極３１３を形成するようにすればよい。具体的には、図４６に示すように、回路基板６−２の電極７，７間又は電極７とダミー電極３１３との間のピッチのうちの最大ピッチＰｍａｘと最小ピッチＰｍｉｎとの関係が、 Ｐｍａｘ≦（Ｐｍｉｎ×２α） ［ここで、αは１〜６の任意の値である。］となるようにダミー電極３１３を配置するようにすることにより、上記と同様な効果を奏することができる。
【００７４】
上記第２実施形態によれば、四角形すなわち正方形又は長方形のＩＣチップ１−２の接合面において、その四隅のコーナー部を除く４辺の各辺の辺部近傍に大略等間隔に一列のバンプ２，…，２を有するものであって、ＩＣチップ１−２の接合面の上記辺の辺部近傍でのバンプ２の無い箇所にダミーバンプ３を形成するとともに、回路基板６−２のＩＣチップ接合領域６ａ−２の上記辺の辺部近傍での電極７の無い箇所にダミー電極３１３を形成することによって、バンプ２，…，２の配列状態をＩＣチップ１−２の各辺の辺部近傍とも大略同一にすることができるとともに電極７，…，７の配列状態を回路基板６−２のＩＣチップ接合領域６ａ−２の各辺の辺部近傍とも大略同一にすることができて、上記圧着工程での上記ＩＣチップ１−２の上記接合面と上記回路基板６−２のＩＣチップ接合領域６ａ−２との間の上記接合材料５の中央部から周辺部への接合材料５の流動時にダミーバンプ３及びダミー電極３１３が接合材料流動規制部材として機能し、ＩＣチップ１−２の各辺の辺部近傍及び回路基板６−２のＩＣチップ接合領域６ａ−２の各辺の辺部近傍での上記接合材料５の中央部から周辺部への流動の大略均一化を図り、かつ、ＩＣチップ１−２の接合面内及び回路基板６−２のＩＣチップ接合領域６ａ−２内での接合材料５の分布の均一化が図れ、密着力が向上し、接合及び封止の信頼性を高めることができる。また、図９に示すように、ＩＣチップ１−２の接合面内及び回路基板６−２のＩＣチップ接合領域６ａ−２内での接合材料５の分布の均一化が図れる結果として接合材料５の密度の低下を防止することができて、ＩＣチップの側面を封止する樹脂量が十分供給され、ＩＣチップ１−２の側面を封止するフィレット５Ａを大きくすることができて、ＩＣチップ接合領域６ａ−２の周辺部でのＩＣチップ１−２と接合材料５との間で剥離や基板６−２の電極７と接合材料５との間で剥離を効果的に防止することができる。このように、ＩＣチップの側面を封止する樹脂量が十分供給されると、ＩＣチップ１−２の側面を封止するフィレット５Ａを大きくすることができる理由は、ＩＣチップと基板との間隔は、バンプ材質、形状で決まるため、接合樹脂量が十分に供給されて多くなると、圧着時にＩＣチップの外部にはみ出す樹脂量が増加して、フィレットを大きくすることができる。
【００７５】
上記接合材料流動規制部材の一例としてのダミーバンプは、ＩＣチップ１−２の接合面での配置位置は上記対向する一対の辺部近傍に限定されるものではなく、いずれか１つの辺部近傍のバンプ２，…，２の列において、隣接するバンプ２，２との間隔が他の間隔より大きく離れている位置にダミーバンプ３を他のバンプ２と同様に形成して大略等間隔にバンプ２が配列されているようにすればよい。
【００７６】
また、上記接合材料流動規制部材の一例としてのダミー電極３１３は、回路基板６−２のＩＣチップ接合領域６ａ−２での配置位置は上記対向する一対の辺部近傍に限定されるものではなく、いずれか１つの辺部近傍の電極７，…，７の列において、隣接する電極７，７との間隔が他の間隔より大きく離れている位置にダミー電極３１３を他の電極７と同様に形成して大略等間隔に電極７が配列されているようにすればよい。
【００７７】
（第３実施形態）
本発明の第３実施形態にかかる電子部品の実装方法及びその方法により製造される電子部品実装体の一例としての、ＩＣチップの実装方法及びその方法により製造されるＩＣチップ実装体を図１３〜図１６に基づいて説明する。図１３（Ａ）及び（Ｂ）は第３実施形態にかかるＩＣチップの実装方法の接合工程前の上記回路基板の側面図及び平面図であり、図１３（Ｃ）及び図１４は上記圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面図及び部分的に拡大した一部断面側面図である。また、図１５（Ａ）及び（Ｂ）は第３実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の上記回路基板の側面図及び平面図であり、図１５（Ｃ）及び図１６は上記従来例の圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面図及び部分的に拡大した一部断面側面図である。
【００７８】
上記第１及び第２実施形態においては、接合材料流動規制部材の一例として、ダミー電極３０３を電極７が配置されていない位置に配置させるものであるが、これに限られるものではない。例えば、ＩＣチップ１−３の接合面には、その接合面のアクティブ面（配線面）を保護するパッシベーション膜３０９を備えるとともに、図１３（Ｂ）に示すように、回路基板６−３のＩＣチップ接合領域６ａ−３の外側の周囲の四角形領域に、有機膜３１９を備えるものがある。このとき、有機膜３１９は、例えばソルダーレジストであって、回路基板６−３のＩＣチップ接合領域６ａ−３の外側の周囲のみならず、その周囲からＩＣチップ接合領域６ａ−３の各辺の内側でかつ各辺の辺部近傍の四角形枠領域（図中、梨地領域）３２０において、上記電極７，…，７のうちバンプ２，…，２との接合部を除く部分及び電極以外の回路基板６−３の表面に形成される。よって、このＩＣチップ接合領域６ａ−３の外側の周囲からＩＣチップ接合領域６ａ−３の各辺の内側でかつ各辺の辺部近傍の四角形枠領域３２０の有機膜３１９が、接合材料流動規制部材の一例の接合材料流動規制膜として機能して、有機膜３１９により接合材料５の流動規制を行うようにしてもよい。ここで、有機膜３１９の代りに無機膜でも同様の効果が得られるが、無機膜の場合、樹脂との密着が弱いために、ヒートサイクルなどの環境試験下において、封止樹脂と無機膜との間で剥離が起こり、封止樹脂としての機能が低下する恐れがある。これに対して、有機膜３１９とすれば、封止樹脂との密着が無機膜よりも有機膜の方が強く、信頼性及び品質を向上させることができるからである。
【００７９】
上記有機膜３１９は、例えば、他の配線又はバンプなどとの電気的な接触を防止して絶縁性を保持し導体を保護する耐熱性コーティングとして機能する、ポリイミド又はポリベンザオキサゾール（ＰＢＯ）などのソルダーレジストより構成され、そのような有機膜３１９を例えば厚さ３〜７μｍ程度だけスピンコートして、図１３（Ｂ）に示すように、回路基板６−３のＩＣチップ接合領域６ａ−３の外側の周囲、及び、ＩＣチップ接合領域６ａ−３の各辺の内側でかつ各辺の辺部近傍の四角形枠領域（図中、梨地領域）３２０に全面的に塗布する。その後、電極７，…，７のうちバンプ２，…，２との接合に必要な接合部を帯状に除去して当該接合部を露出させる。除去する領域は帯状に独立していてもよいし、連結されて枠状に形成されていてもよい。この結果、有機膜３１９を、ＩＣチップ接合領域６ａ−３の外側の周囲及び上記四角形枠領域（図中、梨地領域）３２０であって、上記電極７，…，７のうちバンプ２，…，２との接合部を除く部分及び電極以外の回路基板６−３の表面に対して形成することができる。有機膜３１９は、図１４に示す様に、ＩＣチップ外周部のＩＣチップと基板との間の距離を縮め、ＩＣチップ外周部の樹脂量を上げる機能を有するものである。この有機膜３１９によって、封止樹脂とＩＣチップとの界面での剥離、及び、封止樹脂と基板との界面での剥離をそれぞれ防止できるとともに、封止樹脂密度を上げてボイドの防止を行うことができ、高湿環境下での水分の進入を極力防止でき、高温高湿環境下での信頼性及び品質を向上させることができる。
【００８０】
従来では、図１５に示すように、正方形のＩＣチップ７０１の接合面のバンプ７０２，…，７０２を有しかつ４辺のバンプ７０２，…，７０２で囲まれた正方形の領域にパッシベーション膜５０９（図中、梨地領域）を配置しているとともに、ＩＣチップ７０１を接合する回路基板７０６のＩＣチップ接合領域７０６ａの各辺の外側の周囲に所定間隔をあけて四角形枠状に有機膜５１９が配置されていると仮定する。このように有機膜５１９が回路基板７０６のＩＣチップ接合領域７０６ａの周囲に配置されている状態で、接合材料７０５を回路基板７０６に供給したのち、接合面の電極７０４上にバンプ７０２が形成されたＩＣチップ７０１の上記接合面と上記回路基板７０６との間に上記接合材料７０５を介して、上記ＩＣチップ７０１の上記電極７０４上の上記バンプ７０２と上記回路基板７０６の電極７０７とが電気的に接触するように接合し、基台７１０上に上記回路基板７０６を載置し、ＩＣチップ７０１に加熱された押圧部材７０８を当接させて加圧することにより、加熱及び加圧状態で上記ＩＣチップ７０１を圧着して上記ＩＣチップ７０１の上記接合面と上記回路基板７０６との間の上記接合材料７０５を硬化させる。このような場合、パッシベーション膜５０９が配置されているＩＣチップ７０１の上記接合面内で４辺のバンプ７０２，…，７０２で囲まれた正方形の領域よりも、４辺のバンプ７０２，…，７０２間の位置及び４辺のバンプ７０２，…，７０２の外側の位置すなわちＩＣチップ接合領域７０６ａ内の周囲部分においては、ＩＣチップ側にパッシベーション膜５０９が無いとともに基板側に有機膜５１９が無いため、ＩＣチップ７０１と基板７０６との隙間が他の部分より大きくなり、当該部分で接合材料７０５の流れる流動速度が遅くなり、接合材料７０５の密度が低下することにより、ＩＣチップ接合領域７０６ａ内の周囲部分での密着力すなわち接合力及び封止力が低下し、剥離が発生することになる。言いかえれば、ＩＣチップ７０１と基板７０６との隙間が他の部分より大きくなると、局部的なＩＣチップと基板との間の体積も大きくなり、このことにより、そこを埋める封止樹脂量も多くなる。よって、ＩＣチップ外周部にはみ出す樹脂量がこの部分で減少し、結果として、フィレットが小さくなる。このように、ＩＣチップ７０１の接合面の周囲部分で接合材料７０５との間で剥離が発生すると、その剥離部分に水分が入り込み、吸湿によるＩＣチップ７０１などが腐食などが生じてしまうことになる。
【００８１】
このような接合力及び封止力の低下を防止するため、第３実施形態では、上記接合材料供給工程の前に、図１３（Ａ），（Ｂ）に示すように、回路基板６−３の正方形のＩＣチップ接合領域６ａ−３の各辺の内側でかつ各辺の辺部近傍の四角形領域（図中、梨地領域）において、上記電極７，…，７のうちバンプ２，…，２との接合部を除く部分及び電極以外の回路基板の表面にも、接合材料流動規制部材の一例の接合材料流動規制膜として、有機膜３１９（図中、梨地領域）を配置する。この結果、パッシベーション膜３０９が配置されているＩＣチップ１−３の上記接合面内で４辺のバンプ２，…，２で囲まれた正方形の領域と、ＩＣチップ側にパッシベーション膜３０９が無いが代わりに基板側に有機膜３１９が配置されている４辺のバンプ２，…，２の外側の位置すなわちＩＣチップ接合領域６ａ−３のやや内側の周囲部分とでは接合材料５の流れる流動速度が大略同じになり、接合材料５の密度の低下を防止することができ、ＩＣチップ接合領域６ａ−３のやや内側の周囲部分すなわちＩＣチップ接合領域６ａ−３の各辺の内側でかつ各辺の辺部近傍での密着力すなわち接合力及び封止力の低下を防止することができる。その結果、ＩＣチップの側面を封止する樹脂量が十分供給され、ＩＣチップ１−３の側面を封止するフィレット５Ａを大きくすることができて、ＩＣチップ接合領域６ａ−３の周辺部でのＩＣチップ１−３と接合材料５との間で剥離や基板６−３の電極７と接合材料５との間で剥離を効果的に防止することができる。
【００８２】
このように有機膜３１９が形成されている状態で、接合材料供給工程において、ＩＣチップ１−３の接合面又は回路基板６−３のＩＣチップ接合領域６ａ−３の少なくともいずれか一方に、少なくとも絶縁性の熱硬化性樹脂を含む接合材料５を供給する。接合材料５の供給方法は第１実施形態と同様である。
【００８３】
次いで、接合工程において、接合材料５を間に挟んで回路基板６−３のＩＣチップ接合領域６ａ−３にＩＣチップ１−３の接合面を重ね合わせて、上記各電極４上にバンプ２が形成されたＩＣチップ１−３の上記接合面と上記回路基板６−３のＩＣチップ接合領域６ａ−３との間に上記接合材料５を介して、上記ＩＣチップ１−３の上記各電極４上の上記バンプ２と上記回路基板６−３の各電極７とが電気的に接触するように位置決めしたのち接合する。この接合工程は、回路基板６−３が基台１０上に載置された状態で行うようにしてもよいし、別の個所で接合材料５を介してＩＣチップ１−３が回路基板６−３に重ね合わされて接合工程を行ったのち、本圧着工程において、接合材料５を介してＩＣチップ１−３が重ね合わされている回路基板６−３が基台１０上に載置されるようにしてもよい。
【００８４】
次いで、本圧着工程において、押圧部材８をＩＣチップ１−３に当接させて、接合材料５を介してＩＣチップ１−３が重ね合わされている回路基板６−３が載置された基台１０に向けて押圧部材８から押圧力を作用させるとともに、押圧部材８内に内蔵されたヒータの熱を押圧部材８からＩＣチップ１−３に伝達する。この結果、所定温度を加えつつ所定の加圧力を作用させて、ＩＣチップ１−３の接合面を回路基板６−３のＩＣチップ接合領域６ａ−３に押圧することにより、ＩＣチップ１−３の接合面の各電極４上のバンプ２が回路基板６−３のＩＣチップ接合領域６ａ−３内の各電極７に接触する。このとき、ＩＣチップ１−３が回路基板６−３に対して短手方向すなわち幅方向にの両側に有機膜３１９が配置されていることにより、上記ＩＣチップ接合領域６ａ−３の中央部から周辺部への上記接合材料５の流動に対して流動抵抗を増加させることができて、バンプ２，…，２の列の両側において、有機膜３１９が無い場合と比較して、図１４に示すようにＩＣチップ１−３と回路基板６−３との間での流動速度を低下させることができ、回路基板６−３のＩＣチップ接合領域６ａ−３内の各辺の辺部近傍において同様に接合材料５の中央部から周辺部へ向けての流動が規制されて、不均一に接合材料５が流動するのを防止し、少なくともＩＣチップ接合領域６ａ−３全体において接合材料５が大略均一に分布保持されて上記熱により硬化させられてＩＣチップ実装体を製造することができる。すなわち、上記本圧着工程において、上記有機膜３１９により、上記ＩＣチップ接合領域６ａ−３の中央部から周辺部への圧着時の上記接合材料５の不均一な押し出しを規制することができる。
【００８５】
なお、上記説明においては、接合工程においてＩＣチップ１−３の各バンプ２と回路基板６−３の各電極７とが接触するように記載したが、これに限られるものではなく、接合工程ではＩＣチップ１−３の各バンプ２と回路基板６−３の各電極７とが接触せず、本圧着工程で初めてＩＣチップ１−３の各バンプ２と回路基板６−３の各電極７とが接触するようにしてもよい。
【００８６】
上記第３実施形態によれば、回路基板６−３のＩＣチップ接合領域６ａ−３の外側の周囲の四角形領域に有機膜３１９を配置することにより、有機膜３１９が、接合材料流動規制部材の一例の接合材料流動規制膜として接合材料５の流動規制を行う。この結果、有機膜３１９が無い場合と比較して、図１４に示すように、上記圧着工程での上記ＩＣチップ１−３の上記接合面と上記回路基板６−３のＩＣチップ接合領域６ａ−３との間の上記接合材料５の中央部から周辺部への接合材料５の流動時に、有機膜３１９が接合材料流動規制部材として機能してＩＣチップ１−３と回路基板６−３との間での流動速度を低下させることができ、上記接合材料５の中央部から周辺部への流動の大略均一化を図り、かつ、ＩＣチップ１−３の接合面内での接合材料５の分布の均一化が図れ、密着力が向上し、接合及び封止の信頼性を高めることができる。
【００８７】
（第４実施形態）
本発明の第４実施形態にかかる電子部品の実装方法及びその方法により製造される電子部品実装体の一例としての、ＩＣチップの実装方法及びその方法により製造されるＩＣチップ実装体を図１７〜図２２に基づいて説明する。図１７（Ａ）及び（Ｂ）は第４実施形態にかかるＩＣチップの実装方法の接合工程前の上記ＩＣチップの側面図及び裏面図であり、図１８は圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図であり、図１９は圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面図である。また、図２０（Ａ）及び（Ｂ）は第４実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の上記ＩＣチップの側面図及び裏面図であり、図２１は圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図であり、図２２は圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面図である。
【００８８】
上記第３実施形態においては、四角形すなわち正方形又は長方形のＩＣチップ接合領域６ａ−４の各辺の内側でかつ各辺の辺部近傍の四角形枠領域３２０に有機膜３１９を配置しているが、これに限られるものではない、例えば、ＩＣチップ１−４が４辺の各辺の辺部近傍に一列のバンプ２，…，２を有するものであったが、本第４実施形態では、図１７に示すように、電子部品の一例としての長方形のＩＣチップ１−４の接合面において、短手方向の中央部に長手方向沿いに１列に延びかつ大略等間隔に配置されたバンプ２，…，２を有するものであって、図１８に示すように、１列のバンプ２，…，２の両側付近まで、接合材料流動規制部材の一例としての有機膜３２９を配置して、有機膜３２９により接合材料５の流動規制を行うものである。
【００８９】
上記有機膜３２９は、例えば、他の配線又はバンプなどとの電気的な接触を防止して絶縁性を保持し導体を保護する耐熱性コーティングとして機能する、ポリイミド又はポリベンザオキサゾール（ＰＢＯ）などのソルダーレジストより構成され、そのような有機膜３２９を例えば厚さ３〜７μｍ程度だけスピンコートして、図１８に示すように、回路基板６−４のＩＣチップ接合領域６ａ−４の外側から、ＩＣチップ接合領域６ａ−４の短手方向の中央部に長手方向沿いに１列延びかつ大略等間隔に配置された電極７，…，７が形成されている長手方向沿いの中央部分を残し、その両側まで、全面的に塗布することにより形成することができる。
【００９０】
従来では、図２０及び図２１に示すように、長方形のＩＣチップ７０１の接合面において、短手方向の中央部に長手方向沿いに１列に延びかつ大略等間隔に配置されたバンプ７０２，…，７０２を有すると仮定する。このようにバンプ７０２，…，７０２がＩＣチップ７０１に配置されている状態で、接合材料７０５を回路基板７０６に供給したのち、ＩＣチップ７０１の接合面の電極７０４上にバンプ７０２が形成されたＩＣチップ７０１の接合面と上記回路基板７０６との間に上記接合材料７０５を介して、上記ＩＣチップ７０１の上記電極７０４上の上記バンプ７０２と上記回路基板７０６の電極７０７とが電気的に接触するように接合し、基台７１０上に上記回路基板７０６を載置し、ＩＣチップ７０１に加熱された押圧部材７０８を当接させて加圧することにより、加熱及び加圧状態で上記ＩＣチップ７０１を圧着して上記ＩＣチップ７０１の上記接合面と上記回路基板７０６との間の上記接合材料７０５を硬化させる。このような場合、短手方向の中央部に長手方向沿いに１列に延びかつ大略等間隔に配置されているバンプ７０２，…，７０２を中心に、バンプ７０２，…，７０２の列の両側において、図２２に示すように長方形のＩＣチップ７０１が回路基板７０６に対して短手方向すなわち幅方向に大きな流動速度で移動してしまい、接合材料７０５の密度が低下することにより、ＩＣチップ接合領域７０６ａ内の短手方向の中央部以外の周囲部分での密着力すなわち接合力及び封止力が低下してしまい、剥離が発生することになる。
【００９１】
このような接合力及び封止力の低下を防止するため、第４実施形態では、上記接合材料供給工程の前に、図１８に示すように、長方形のＩＣチップ１−４の接合面において、短手方向の中央部に長手方向沿いに１列に延びかつ大略等間隔に配置されたバンプ２，…，２に対向する、回路基板６−４のＩＣチップ接合領域６ａ−４の短手方向の中央部に長手方向沿いに１列延びかつ大略等間隔に配置された電極７，…，７付近まで、接合材料流動規制部材の一例としての有機膜３２９を配置する。この結果、ＩＣチップ１−４の接合面言い替えれば回路基板６−４のＩＣチップ接合領域６ａ−４の外側周囲及びＩＣチップ接合領域６ａ−４の短手方向の中央部の両側付近まで、有機膜３２９により覆うようにすることにより、有機膜３２９が配置された領域でＩＣチップ１−４の接合面と回路基板６−４のＩＣチップ接合領域６ａ−４との間の隙間が狭くなり、接合材料５の流動に抵抗をもたらせることができて、有機膜３２９が無い場合よりも、ＩＣチップ１−４の接合面内及び回路基板６−４のＩＣチップ接合領域６ａ−４内での接合材料５の分布の均一化が図れる。この結果、接合材料５の密度の低下を防止することができて、ＩＣチップの側面を封止する樹脂量が十分供給され、ＩＣチップ１−４の側面を封止するフィレット５Ａを大きくすることができて、ＩＣチップ接合領域６ａ−４の周辺部でのＩＣチップ１−４と接合材料５との間で剥離や基板６−４の電極７と接合材料５との間で剥離を効果的に防止することができる。
【００９２】
なお、有機膜３２９が形成される方法は、第３実施形態の有機膜３１９の形成方法と同様である。
【００９３】
このように有機膜３２９が形成されている状態で、接合材料供給工程において、ＩＣチップ１−４の接合面又は回路基板６−４のＩＣチップ接合領域６ａ−４の少なくともいずれか一方に、少なくとも絶縁性の熱硬化性樹脂を含む接合材料５を供給する。接合材料５の供給方法は第１実施形態と同様である。
【００９４】
次いで、接合工程において、接合材料５を間に挟んで回路基板６−４のＩＣチップ接合領域６ａ−４にＩＣチップ１−４の接合面を重ね合わせて、上記各電極４上にバンプ２が形成されたＩＣチップ１−４の上記接合面と上記回路基板６−４のＩＣチップ接合領域６ａ−４との間に上記接合材料５を介して、上記ＩＣチップ１−４の上記各電極４上の上記バンプ２と上記回路基板６−４の各電極７とが電気的に接触するように位置決めしたのち接合する。この接合工程は、回路基板６−４が基台１０上に載置された状態で行うようにしてもよいし、別の個所で接合材料５を介してＩＣチップ１−４が回路基板６−４に重ね合わされて接合工程を行ったのち、本圧着工程において、接合材料５を介してＩＣチップ１−４が重ね合わされている回路基板６−４が基台１０上に載置されるようにしてもよい。
【００９５】
次いで、本圧着工程において、押圧部材８をＩＣチップ１−４に当接させて、接合材料５を介してＩＣチップ１−４が重ね合わされている回路基板６−４が載置された基台１０に向けて押圧部材８から押圧力を作用させるとともに、押圧部材８内に内蔵されたヒータの熱を押圧部材８からＩＣチップ１−４に伝達する。この結果、所定温度を加えつつ所定の加圧力を作用させて、ＩＣチップ１−４の接合面を回路基板６−４のＩＣチップ接合領域６ａ−４に押圧することにより、ＩＣチップ１−４の接合面の各電極４上のバンプ２が回路基板６−４のＩＣチップ接合領域６ａ−４内の各電極７に接触する。このとき、長方形のＩＣチップ１−４が回路基板６−４に対して短手方向すなわち幅方向にの両側に有機膜３２９が配置されていることにより流動抵抗を増加させることができて、バンプ２，…，２の列の両側において、有機膜３２９が無い場合と比較して、図１９に示すようにＩＣチップ１−４と回路基板６−４との間での流動速度を低下させることができ、回路基板６−４のＩＣチップ接合領域６ａ−４内の各辺の辺部近傍において同様に接合材料５の中央部から周辺部へ向けての流動が規制されて、不均一に接合材料５が流動するのを防止し、少なくともＩＣチップ接合領域６ａ−４全体において接合材料５が大略均一に分布保持されて上記熱により硬化させられてＩＣチップ実装体を製造することができる。すなわち、上記本圧着工程において、上記有機膜３２９により、上記ＩＣチップ１−４の上記接合領域６ａ−４の中央部から周辺部への圧着時の上記接合材料５の不均一な押し出しを規制することができる。
【００９６】
なお、上記説明においては、接合工程においてＩＣチップ１−４の各バンプ２と回路基板６−４の各電極７とが接触するように記載したが、これに限られるものではなく、接合工程ではＩＣチップ１−４の各バンプ２と回路基板６−４の各電極７とが接触せず、本圧着工程で初めてＩＣチップ１−４の各バンプ２と回路基板６−４の各電極７とが接触するようにしてもよい。
【００９７】
上記第４実施形態によれば、長方形ＩＣチップ接合領域６ａ−４において、長方形のＩＣチップ１−４が回路基板６−４に対して短手方向すなわち幅方向に１点で支持され、かつ、その両側に有機膜３２９を配置することにより、バンプ２，…，２の列の両側において、有機膜３２９が無い場合と比較して、図１９に示すようにＩＣチップ１−４と回路基板６−４との間での流動速度を低下させることができて、上記圧着工程での上記ＩＣチップ１−４の上記接合面と上記回路基板６−４のＩＣチップ接合領域６ａ−４との間の上記接合材料５の中央部から周辺部への接合材料５の流動時に有機膜３２９が接合材料流動規制部材として機能し、上記接合材料５の中央部から周辺部への流動の大略均一化を図り、かつ、ＩＣチップ１−４の接合面内での接合材料５の分布の均一化が図れ、密着力が向上し、接合及び封止の信頼性を高めることができる。
【００９８】
（第５実施形態）
本発明の第５実施形態にかかる電子部品の実装方法及びその方法により製造される電子部品実装体の一例としての、ＩＣチップの実装方法及びその方法により製造されるＩＣチップ実装体を図２３〜図２６に基づいて説明する。図２３（Ａ）及び（Ｂ）は第５実施形態にかかるＩＣチップの実装方法の接合工程前の上記ＩＣチップの側面図及び裏面図であり、図２４は圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。また、図２５（Ａ）及び（Ｂ）は第５実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の上記ＩＣチップの側面図及び裏面図であり、図２６は圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【００９９】
上記第４実施形態においては、四角形のＩＣチップ１−５の中央部に一列のバンプ２，…，２を有するものであったが、本発明はこれに限られるものではない。例えば、第５実施形態では、図２３に示すように、電子部品の一例としての長方形のＩＣチップ１−５の接合面において、４辺のうちの対向する２辺（図２３（Ｂ）では左右の２辺）の辺部近傍にのみそれぞれ辺と大略平行にかつ大略等間隔に一列のバンプ２，…，２を有するものであって、ＩＣチップ１−５の接合面の残りの２辺（図２３（Ｂ）では上下の２辺）の辺部近傍にはバンプ２が無く、回路形成体の一例としての回路基板６−５のＩＣチップ接合領域６ａ−５の外側及び内側全域に、各電極７の各バンプ２との接合部を除いて、大略全面的に、接合材料流動規制部材の一例としての有機膜３３９を配置して、有機膜３３９により接合材料５の流動規制を行うものである。
【０１００】
上記有機膜３３９は、例えば、他の配線又はバンプなどとの電気的な接触を防止して絶縁性を保持し導体を保護する耐熱性コーティングとして機能する、ポリイミド又はポリベンザオキサゾール（ＰＢＯ）などのソルダーレジストより構成され、そのような有機膜３３９を例えば厚さ３〜７μｍ程度だけスピンコートして、回路基板６−５のＩＣチップ接合領域６ａ−５及びその外側に全面的に塗布する。その後、図２４に示すように、電極７，…，７のうちバンプ２，…，２との接合に必要な接合部を含む領域３４０を帯状に除去して当該接合部を露出させる。除去する領域３４０は帯状に独立していてもよいし、連結されて枠状に形成されていてもよい。この結果、有機膜３３９を、回路基板６−５のＩＣチップ接合領域６ａ−５外側及び内側全域に、各電極７の各バンプ２との接合部を除いて、大略全面的に、形成することができる。
【０１０１】
従来では、図２５に示すように、長方形のＩＣチップ７０１の対向する２辺（図２５（Ｂ）では左右の２辺）の辺部近傍のそれぞれにおいて電極７０４，…，７０４上にバンプ７０２，…，７０２が大略等間隔に配列されている一方、ＩＣチップ７０１の接合面の残りの２辺（図２５（Ｂ）では上下の２辺）の辺部近傍にはバンプ７０２が全く無いとともに、回路基板７０６のＩＣチップ接合領域７０６ａの外側の周囲に有機膜５３９を配置していると仮定する。このようにバンプ７０２，…，７０２がＩＣチップ７０１に配置されている状態で、接合材料７０５を回路基板７０６に供給したのち、接合面の電極７０４上にバンプ７０２が形成されたＩＣチップ７０１の上記接合面と上記回路基板７０６のＩＣチップ接合領域７０６ａとの間に上記接合材料７０５を介して、上記ＩＣチップ７０１の上記電極７０４上の上記バンプ７０２と上記回路基板７０６の電極７０７とが電気的に接触するように接合し、基台７１０上に上記回路基板７０６を載置し、ＩＣチップ７０１に加熱された押圧部材７０８を当接させて加圧することにより、加熱及び加圧状態で上記ＩＣチップ７０１を圧着して上記ＩＣチップ７０１の上記接合面と上記回路基板７０６のＩＣチップ接合領域７０６ａとの間の上記接合材料７０５を硬化させる。このような場合、有機膜５３９が無い回路基板７０６のＩＣチップ接合領域７０６ａ内から有機膜５３９が配置されている回路基板７０６のＩＣチップ接合領域７０６ａ外に向けて接合材料７０５が流れ出すとき、ＩＣチップ７０１の接合面の大略等間隔に配列されているバンプ７０２，…，７０２が配置されている辺部近傍よりも、バンプ７０２が欠けている位置の辺部近傍において接合材料７０５が大きく流れ出すことになる。この結果、ＩＣチップ７０１の中央部分では接合材料７０５の密度が疎になり、接合力及び封止力が低下することになる。
【０１０２】
このような接合力及び封止力の低下を防止するため、第５実施形態では、上記接合材料供給工程の前に、図２３（Ａ），（Ｂ）に示すように、回路基板６−５のＩＣチップ接合領域６ａ−５の外側及び内側全域に、電極７のバンプ２との接合部を除いて、大略全面的に、接合材料流動規制部材の一例としての有機膜３３９を配置して、有機膜３３９により接合材料５の流動規制を行うものである。この結果、長方形のＩＣチップ１−５のバンプ２，…，２を有する上記対向する２辺（図２３（Ｂ）では左右の短辺の２辺）の辺部近傍と、バンプ２が無い２対向する別の２辺（図２３（Ｂ）では上下の長辺の２辺）の辺部近傍とのそれぞれにおいて、有機膜３３９が同様に配置されているため、流動抵抗も同様なものとなり、有機膜３３９が無い場合と比較して、流動抵抗が高まり、接合材料５の流動規制が同様に行われる。
【０１０３】
このように回路基板６−５のＩＣチップ接合領域６ａ−５の外側及び内側全域に、電極７のバンプ２との接合部を除いて、大略全面的に、有機膜３３９が配置されている状態で、接合材料供給工程において、ＩＣチップ１−５の接合面又は回路形成体の一例としての回路基板６−５のＩＣチップ接合領域６ａ−５の少なくともいずれか一方に、少なくとも絶縁性の熱硬化性樹脂を含む接合材料５を供給する。接合材料５の供給方法は第１実施形態と同様である。
【０１０４】
次いで、接合工程において、接合材料５を間に挟んで回路基板６−５のＩＣチップ接合領域６ａ−５にＩＣチップ１−５の接合面を重ね合わせて、上記各電極４上にバンプ２が形成されたＩＣチップ１−５の上記接合面と上記回路基板６−５のＩＣチップ接合領域６ａ−５との間に上記接合材料５を介して、上記ＩＣチップ１−５の上記各電極４上の上記バンプ２と上記回路基板６−５の各電極７とが電気的に接触するように位置合わせしたのち接合する。この接合工程は、回路基板６−５が基台（例えば、図１９の基台１０参照）上に載置された状態で行うようにしてもよいし、別の個所で接合材料５を介してＩＣチップ１−５が回路基板６−５に重ね合わされて接合工程を行ったのち、本圧着工程において、接合材料５を介してＩＣチップ１−５が重ね合わされている回路基板６−５が基台上に載置されるようにしてもよい。
【０１０５】
次いで、本圧着工程において、押圧部材（例えば、図１９の押圧部材８参照）をＩＣチップ１−５に当接させて、接合材料５を介してＩＣチップ１−５が重ね合わされている回路基板６−５が載置された基台に向けて押圧部材から押圧力を作用させるとともに、押圧部材内に内蔵されたヒータの熱を押圧部材からＩＣチップ１−５に伝達する。この結果、所定温度を加えつつ所定の加圧力を作用させて、ＩＣチップ１−５の接合面を回路基板６−５のＩＣチップ接合領域６ａ−５に押圧することにより、ＩＣチップ１−５の接合面の各電極４上のバンプ２が回路基板６−５のＩＣチップ接合領域６ａ−５内の各電極７に接触する。このとき、上記ＩＣチップ１−５の上記接合面と上記回路基板６−５のＩＣチップ接合領域６ａ−５との間の上記接合材料５を、上記ＩＣチップ１−５の上記接合面の中央部から周辺部へ向けて押し出そうとする。ここで、上記したようにバンプ２が欠けている位置にも配置されている位置にも有機膜３３９が配置されている結果として、ＩＣチップ１−５の上記接合面の各辺の辺部近傍においては、いずれの辺の辺部近傍でも流動速度が、大略一定となり、同様に接合材料５の中央部から周辺部へ向けての流動が規制されて、不均一に接合材料５が流動するのを防止し、少なくともＩＣチップ１−５の接合面全体において接合材料５が大略均一に分布保持されて上記熱により硬化させられてＩＣチップ実装体を製造することができる。すなわち、上記本圧着工程において、上記ＩＣチップ１−５に備えた有機膜３３９により、上記ＩＣチップ１−５の上記接合面の中央部から周辺部への圧着時の上記接合材料５の不均一な押し出しを規制することができる。
【０１０６】
上記接合材料流動規制部材の例としての各有機膜３３９の高さ、各有機膜３３９の耐熱性、及び、接合材料５の例については、第４実施形態と同様である。
【０１０７】
なお、上記説明においては、接合工程においてＩＣチップ１−５の各バンプ２と回路基板６−５の各電極７とが接触するように記載したが、これに限られるものではなく、接合工程ではＩＣチップ１−５の各バンプ２と回路基板６−５の各電極７とが接触せず、本圧着工程で初めてＩＣチップ１−５の各バンプ２と回路基板６−５の各電極７とが接触するようにしてもよい。
【０１０８】
上記第５実施形態によれば、回路基板６−５のＩＣチップ接合領域６ａ−５の外側及び内側全域に、電極７のバンプ２との接合部を除いて、大略全面的に、接合材料流動規制部材の一例としての有機膜３３９を配置することにより、上記圧着工程での上記ＩＣチップ１−５の上記接合面と上記回路基板６−５のＩＣチップ接合領域６ａ−５との間の上記接合材料５の中央部から周辺部への接合材料５の流動時に有機膜３３９が接合材料流動規制部材として機能し、ＩＣチップ１−５の各辺の辺部近傍での上記接合材料５の中央部から周辺部への流動の大略均一化を図り、かつ、ＩＣチップ１−５の接合面内での接合材料５の分布の均一化が図れ、密着力が向上し、接合及び封止の信頼性を高めることができる。
【０１０９】
（第６実施形態）
本発明の第６実施形態にかかる電子部品の実装方法及びその方法により製造される電子部品実装体の一例としての、ＩＣチップの実装方法及びその方法により製造されるＩＣチップ実装体を図２７〜図３０に基づいて説明する。図２７（Ａ），（Ｂ）は第６実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び平面図であり、図２７（Ｃ）及び図２８は圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面及び部分的に拡大した一部断面側面図である。また、図２９（Ａ），（Ｂ）は第６実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の上記回路基板の側面図及び平面図であり、図２９（Ｃ）及び図３０は上記従来例の圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面及び部分的に拡大した一部断面側面図である。
【０１１０】
上記接合材料流動規制部材の一例としての有機膜３３９を配置する位置は、回路基板６−６のＩＣチップ接合領域６ａ−６内に限るものではなく、この第６実施形態のように、回路基板６−６のＩＣチップ接合領域６ａ−６の外側に配置するようにしてもよい。すなわち、上記第６実施形態においては、図２７（Ａ），（Ｂ），（Ｃ）及び図２８に示すように、回路形成体の一例としての回路基板６−６のＩＣチップ接合領域６ａ−６の外側の接合材料はみ出し領域に、ＩＣチップ接合領域６ａ−６を囲むような四角形枠状に構成されて回路基板表面より大きく突出したフィレット形成用凸部としてのダム部３４５を上記接合材料流動規制部材の一例として設けて、電子部品の一例としての正方形のＩＣチップ１−６の接合面と回路基板６−６のＩＣチップ接合領域６ａ−６との間に挟みこまれる接合材料５が圧着工程で回路基板６−６のＩＣチップ接合領域６ａ−６の外側に流れ出したとき、上記ダム部３４５により盛り上がるようにほぼ堰き止められてＩＣチップ１−６の側面を覆うフィレット５Ａを大きくして、封止樹脂として機能する接合材料５によるＩＣチップ１−６の封止効果を向上させて、信頼性の向上を図ることができるようにすることもできる。
【０１１１】
上記ダム部３４５は、例えば、ソルダーレジストなどの有機膜、又は、上記回路基板６−６の上記電極７と同じ構成でかつ上記電極７より厚いダミー電極より構成することができる。
【０１１２】
上記ダム部３４５を上記有機膜から構成する場合には、例えば２層の有機膜、すなわち、下側の有機膜３４９と上側の有機膜３４８とより構成することができる。下側の有機膜３４９は、例えば、他の配線又はバンプなどとの電気的な接触を防止して絶縁性を保持し導体を保護する耐熱性コーティングとして機能する、ポリイミド又はポリベンザオキサゾール（ＰＢＯ）などのソルダーレジストより構成され、そのような有機膜３４９を例えば厚さ３〜７μｍ程度だけスピンコートして、図２７（Ｂ）に示すように、回路基板６−６のＩＣチップ接合領域６ａ−６の外側に四角形枠状に塗布する。その後、有機膜３４９の上に、ＩＣチップ接合領域６ａ−６のすぐ外側の近傍にのみ、小さな幅の上側の有機膜３４８を配置して形成している。この上側の有機膜３４８は、ペースト樹脂のスクリーン印刷（通常のソルダーレジスト印刷と凸部印刷の組み合わせ）、又は、フィルムの貼り付け若しくはラミネートにより形成される。ここで、上記ダム部３４５の各層の具体例は、レジスト材料をそのまま使うことを中心に考えれば、エポキシ樹脂又はウレタン樹脂が好ましい。フィルムの貼り付けなどで形成する場合には、ＰＥＴ（ポリエチレンテレフタレート）、ポリエチレン、若しくは、ポリプロピレン樹脂等の熱可塑性樹脂、又は、エポキシ（未硬化）フィルムが使用できる。基板側との密着性を考えれば、エポキシ系樹脂が好ましい。
【０１１３】
従来では、図２９に示すように、正方形のＩＣチップ７０１に対応する回路基板７０６のＩＣチップ接合領域７０６ａの外側の周囲に四角形枠状に有機膜５４９を配置していると仮定する。このように有機膜５４９が配置されている状態で、接合材料７０５を回路基板７０６に供給したのち、ＩＣチップ７０１の上記接合面と上記回路基板７０６のＩＣチップ接合領域７０６ａとの間に上記接合材料７０５を介して、上記ＩＣチップ７０１の上記電極７０４上の上記バンプ７０２と上記回路基板７０６の電極７０７とが電気的に接触するように接合し、基台７１０上に上記回路基板７０６を載置し、ＩＣチップ７０１に加熱された押圧部材７０８を当接させて加圧することにより、加熱及び加圧状態で上記ＩＣチップ７０１を圧着して上記ＩＣチップ７０１の上記接合面と上記回路基板７０６のＩＣチップ接合領域７０６ａとの間の上記接合材料７０５を硬化させる。このような場合、有機膜５３９が無い回路基板７０６のＩＣチップ接合領域７０６ａ内から有機膜５４９が配置されている回路基板７０６のＩＣチップ接合領域７０６ａ外に向けて接合材料７０５が流れ出すとき、ＩＣチップ接合領域７０６ａの外側に離れて配置された有機膜５４９に接合材料７０５が接触するまで、上記ＩＣチップ７０１の上記接合面と上記回路基板７０６のＩＣチップ接合領域７０６ａとの間から流れ出し、有機膜５４９に接合材料７０５が接触すると、接合材料７０５が盛り上がってＩＣチップ７０１の側面を一部覆うようになる。しかしながら、ＩＣチップ７０１の側面の一部しか覆われていないため、接合材料７０５による封止は不充分なものとなっている。
【０１１４】
このような不充分な封止を防止するため、第６実施形態では、上記接合材料供給工程の前に、図２７（Ａ），（Ｂ）に示すように、回路基板６−６のＩＣチップ接合領域６ａ−６の外側の接合材料はみ出し領域、言い替えれば、ＩＣチップ接合領域６ａ−６から所定間隔を空けてＩＣチップ接合領域６ａ−６を囲むような四角形枠状の領域に、ソルダーレジストなどの有機膜から構成されて回路基板表面より大きく突出したダム部３４５を接合材料流動規制部材の一例として配置して、ダム部３４５により接合材料５の流動規制を行うものである。この結果、ダム部３４５が配置されていることにより、ダム部３４５が無い又は低い従来の場合と比較して、上記ダム部３４５により接合材料５が盛り上がるように、接合材料５が回路基板表面沿いに流れ出ようとするのをほぼ堰き止めることができて、ＩＣチップ１−６の側面を覆うようにフィレット５Ａを大きくすることができる。
【０１１５】
このようにダム部３４５が配置されている状態で、接合材料供給工程において、ＩＣチップ１−６の接合面又は回路形成体の一例としての回路基板６−６のＩＣチップ接合領域６ａ−６の少なくともいずれか一方に、少なくとも絶縁性の熱硬化性樹脂を含む接合材料５を供給する。接合材料５の供給方法は第１実施形態と同様である。
【０１１６】
次いで、接合工程において、接合材料５を間に挟んで回路基板６−６のＩＣチップ接合領域６ａ−６にＩＣチップ１−６の接合面を重ね合わせて、上記各電極４上にバンプ２が形成されたＩＣチップ１−６の上記接合面と上記回路基板６−６のＩＣチップ接合領域６ａ−６との間に上記接合材料５を介して、上記ＩＣチップ１−６の上記各電極４上の上記バンプ２と上記回路基板６−６の各電極７とが電気的に接触するように位置合わせしたのち接合する。この接合工程は、回路基板６−６が基台１０上に載置された状態で行うようにしてもよいし、別の個所で接合材料５を介してＩＣチップ１−６が回路基板６−６に重ね合わされて接合工程を行ったのち、本圧着工程において、接合材料５を介してＩＣチップ１−６が重ね合わされている回路基板６−６が基台１０上に載置されるようにしてもよい。
【０１１７】
次いで、本圧着工程において、押圧部材８をＩＣチップ１−６に当接させて、接合材料５を介してＩＣチップ１−６が重ね合わされている回路基板６−６が載置された基台１０に向けて押圧部材８から押圧力を作用させるとともに、押圧部材８内に内蔵されたヒータの熱を押圧部材８からＩＣチップ１−６に伝達する。この結果、所定温度を加えつつ所定の加圧力を作用させて、ＩＣチップ１−６の接合面を回路基板６−６のＩＣチップ接合領域６ａ−６に押圧することにより、ＩＣチップ１−６の接合面の各電極４上のバンプ２が回路基板６−６のＩＣチップ接合領域６ａ−６内の各電極７に接触する。このとき、上記ＩＣチップ１−６の上記接合面と上記回路基板６−６のＩＣチップ接合領域６ａ−６との間の上記接合材料５を、上記ＩＣチップ１−６の上記接合面と上記回路基板６−６のＩＣチップ接合領域６ａ−６との間から外側に向けて押し出そうとする。ここで、上記したように、ＩＣチップ接合領域６ａ−６から所定間隔を空けてＩＣチップ接合領域６ａ−６を囲むような四角形枠状の領域に配置されたダム部３４５により、上記押し出されて回路基板表面沿いに流れ出てきた接合材料５が堰止められる結果として、ＩＣチップ１−６の側面において、接合材料５がダム部３４５により盛り上がり、ＩＣチップ１−６の側面の少なくとも回路基板側の半分程度まで覆うことができたのち、上記熱により硬化させられてＩＣチップ実装体を製造することができる。すなわち、上記本圧着工程において、上記ＩＣチップ１−６に備えたダム部３４５により、上記ＩＣチップ１−６の側面に大きなフィレット５Ａを形成することができて、ＩＣチップ１−６の側面の封止力を向上させることができる。
【０１１８】
上記接合材料流動規制部材の例としてのダム部３４５の高さとしては、上記効果を確実に奏するためには、従来の有機膜３３９よりも少なくとも２倍以上の厚みを有することが好ましい。ダム部３４５を構成する各有機膜３４８，３４９の耐熱性、及び、接合材料５の例については、第５実施形態と同様である。
【０１１９】
なお、上記説明においては、接合工程においてＩＣチップ１−６の各バンプ２と回路基板６−６の各電極７とが接触するように記載したが、これに限られるものではなく、接合工程ではＩＣチップ１−６の各バンプ２と回路基板６−６の各電極７とが接触せず、本圧着工程で初めてＩＣチップ１−６の各バンプ２と回路基板６−６の各電極７とが接触するようにしてもよい。
【０１２０】
なお、図２７（Ｃ）及び図２８では、ＩＣチップ１−６の接合面にはパッシベーション膜３０９が配置されているが、これに限られるものではなく、パッシベーション膜３０９が無くてもよい。
【０１２１】
上記第６実施形態によれば、回路基板６−６のＩＣチップ接合領域６ａ−６から所定間隔を空けてＩＣチップ接合領域６ａ−６を囲むような四角形枠状の領域にダム部３４５を接合材料流動規制部材の一例として配置することにより、上記圧着工程での上記ＩＣチップ１−６の上記接合面と上記回路基板６−６のＩＣチップ接合領域６ａ−６との間の上記接合材料５のＩＣチップ接合領域６ａ−６の外側への接合材料５の流動時に、ダム部３４５により、上記押し出されて回路基板表面沿いに流れ出てきた接合材料５が堰止められて盛り上がり、ＩＣチップ１−６の側面に大きなフィレット５Ａを形成することができて、ＩＣチップ１−６の側面の封止力を向上させることができて、密着力が向上し、接合及び封止の信頼性を高めることができる。
【０１２２】
（第７実施形態）
本発明の第７実施形態にかかる電子部品の実装方法及びその方法により製造される電子部品実装体の一例としての、ＩＣチップの実装方法及びその方法により製造されるＩＣチップ実装体を図３１〜図３４に基づいて説明する。図３１（Ａ），（Ｂ）は第７実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び平面図であり、図３１（Ｃ）は圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面であり、図３２は圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。図３３（Ａ），（Ｂ）は第７実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び平面図であり、図３３（Ｃ）は図３３の従来例の圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面であり、図３４は図３３の従来例の圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【０１２３】
第７実施形態では、図３１（Ｂ）に示すように、電子部品の一例としての正方形のＩＣチップ１−７の接合面に対応する、回路形成体の一例としての回路基板６−７のＩＣチップ接合基板６−７内で、配線密度が所定値以下の領域でかつ中心より偏心した領域（言い替えれば、接合材料５が不均一な流動を示す領域）に、回路基板６−７の電極７の厚みと大略同一厚みの接合材料流動規制部材としての凸部３５５を備える。この突起３５５は、ソルダーレジスト又は銅箔より構成されている。凸部３５５の形成方法としては、銅箔の場合には、配線と同時に形成（例えば、樹脂に貼り付けた銅箔のエッチング、又は、樹脂板上へのメッキで形成）する。ソルダーレジストを使用する場合には、基板上へのソルダーレジスト形成時に同時に行うのが好ましい。
【０１２４】
このように凸部３５５を配置することにより、回路基板６−７のＩＣチップ接合基板６−７内で電極パターンの配線密度の均一化を図ることができ、封止樹脂である接合材料５の流動の均一化を図り、ＩＣチップ１−７と回路基板６−７との間から外側にはみ出る接合材料５のはみ出し量を均一化させて、接合の安定化を図ることができる。
【０１２５】
これに対して、従来では、図３３及び図３４に示すように、回路基板７０６のＩＣチップ接合領域７０６ａ内で配線密度が所定値以下の領域７０６ｄが存在し、パターン配線密度が不均一なものとなっている場合には、以下のような問題がある。接合材料７０５を回路基板７０６に供給したのち、接合面の電極７０４上にバンプ７０２が形成されたＩＣチップ７０１の上記接合面と上記回路基板７０６のＩＣチップ接合領域７０６ａとの間に上記接合材料７０５を介して、上記ＩＣチップ７０１の上記電極７０４上の上記バンプ７０２と上記回路基板７０６の電極７０７とが電気的に接触するように接合し、基台上に上記回路基板７０６を載置し、ＩＣチップ７０１に加熱された押圧部材を当接させて加圧することにより、加熱及び加圧状態で上記ＩＣチップ７０１を圧着して上記ＩＣチップ７０１の上記接合面と上記回路基板７０６のＩＣチップ接合領域７０６ａとの間の上記接合材料７０５を硬化させる。このような場合、回路基板７０６のＩＣチップ接合領域７０６ａ内から外に向けて接合材料７０５が流れ出すとき、接合材料７０５の流動が不均一なものとなり、ＩＣチップ７０１と回路基板７０６との間から外側にはみ出る接合材料７０５のはみ出し量が不均一となり、接合の安定化を図ることができないものになる。
【０１２６】
このような接合力及び封止力の低下を防止するため、第７実施形態では、上記接合材料供給工程の前に、図３１（Ａ），（Ｂ）に示すように、回路基板６−７のＩＣチップ接合基板６−７の内の電極配線密度が所定値以下の領域でかつ中心より偏心した領域に、回路基板６−７の電極７の厚みと大略同一厚みの接合材料流動規制部材としての凸部３５５を備えるようにしている。
【０１２７】
このように凸部３５５が配置されている状態で、接合材料供給工程において、ＩＣチップ１−７の接合面又は回路基板６−７のＩＣチップ接合基板６−７の少なくともいずれか一方に、少なくとも絶縁性の熱硬化性樹脂を含む接合材料５を供給する。接合材料５の供給方法は第１実施形態と同様である。
【０１２８】
次いで、接合工程において、接合材料５を間に挟んで回路基板６−７のＩＣチップ接合基板６−７にＩＣチップ１−７の接合面を重ね合わせて、上記各電極４上にバンプ２が形成されたＩＣチップ１−７の上記接合面と上記回路基板６−７のＩＣチップ接合基板６−７との間に上記接合材料５を介して、上記ＩＣチップ１−７の上記各電極４上の上記バンプ２と上記回路基板６−７の各電極７とが電気的に接触するように位置合わせしたのち接合する。この接合工程は、回路基板６−７が基台１０上に載置された状態で行うようにしてもよいし、別の個所で接合材料５を介してＩＣチップ１−７が回路基板６−７に重ね合わされて接合工程を行ったのち、本圧着工程において、接合材料５を介してＩＣチップ１−７が重ね合わされている回路基板６−７が基台１０上に載置されるようにしてもよい。
【０１２９】
次いで、本圧着工程において、押圧部材８をＩＣチップ１−７に当接させて、接合材料５を介してＩＣチップ１−７が重ね合わされている回路基板６−７が載置された基台１０に向けて押圧部材８から押圧力を作用させるとともに、押圧部材８内に内蔵されたヒータの熱を押圧部材８からＩＣチップ１−７に伝達する。この結果、所定温度を加えつつ所定の加圧力を作用させて、ＩＣチップ１−７の接合面を回路基板６−７のＩＣチップ接合基板６−７に押圧することにより、ＩＣチップ１−７の接合面の各電極４上のバンプ２が回路基板６−７のＩＣチップ接合基板６−７内の各電極７に接触する。このとき、上記ＩＣチップ１−７の上記接合面と上記回路基板６−７のＩＣチップ接合基板６−７との間で上記接合材料５が、上記ＩＣチップ接合基板６−７の中央部から周辺部へ流動するとき、凸部３５５が無い場合と比較して、図３２に示すように、凸部３５５がある場合にはＩＣチップ接合基板６−７の内の電極配線密度が大略均一化され、ＩＣチップ接合基板６−７の中心部から周辺部に向けて接合材料５が流動するとき、不均一に接合材料５が流動するのを防止し、ＩＣチップ接合基板６−７全体において接合材料５が大略均一に分布保持されて上記熱により硬化させられてＩＣチップ実装体を製造することができる。すなわち、上記本圧着工程において、上記凸部３５５により、上記ＩＣチップ接合基板６−７の中央部から周辺部への圧着時の上記接合材料５の不均一な押し出しを規制することができる。なお、接合材料５の例については、第５実施形態と同様である。
【０１３０】
なお、上記説明においては、接合工程においてＩＣチップ１−７の各バンプ２と回路基板６−７の各電極７とが接触するように記載したが、これに限られるものではなく、接合工程ではＩＣチップ１−７の各バンプ２と回路基板６−７の各電極７とが接触せず、本圧着工程で初めてＩＣチップ１−７の各バンプ２と回路基板６−７の各電極７とが接触するようにしてもよい。
【０１３１】
なお、図３１（Ｃ）では、ＩＣチップ１−７の接合面にはパッシベーション膜３０９が配置されているが、これに限られるものではなく、パッシベーション膜３０９が無くてもよい。また、従来の有機膜５４９と同様な有機膜３５６をＩＣチップ接合基板６−７の外側に所定間隔をおいて四角形枠状に配置しているが、このような有機膜３５６が無くてもよい。
【０１３２】
上記第７実施形態によれば、回路基板６−７のＩＣチップ接合基板６−７の内の電極配線密度が所定値以下の領域でかつ中心より偏心した領域に、回路基板６−７の電極７の厚みと大略同一厚みの接合材料流動規制部材としての凸部３５５を備えることにより、回路基板６−７のＩＣチップ接合基板６−７内でパターン配線密度の均一化を図ることができ、封止樹脂である接合材料５の流動の均一化を図り、ＩＣチップ１−７と回路基板６−７との間から外側にはみ出る接合材料５のはみ出し量を均一化させて、接合の安定化を図ることができる。
【０１３３】
（第８実施形態）
本発明の第８実施形態にかかる電子部品の実装方法及びその方法により製造される電子部品実装体の一例としての、ＩＣチップの実装方法及びその方法により製造されるＩＣチップ実装体を図３５〜図３９に基づいて説明する。図３５（Ａ），（Ｂ）は第８実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び平面図であり、図３６（Ａ），（Ｂ）は圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面及び一部拡大断面側面図であり、図３７は圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。図３８及び図３９は第７実施形態を説明するための比較例にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の一部拡大断面側面である。
【０１３４】
第８実施形態では、第７実施形態のソルダーレジスト又は銅箔による凸部３５５において、接合材料５と基板６−８との密着性を向上させるものである。すなわち、第７実施形態のような凸部３５５を例えば電極７と同一構成で構成しようとすると、図３８〜図３９に示すように、接合材料５によりＩＣチップ１と基板６とが接合されているとき接合材料５と基板６との間の凸部３５５は、接合材料側から順に、Ａｕ層３５５ａ、Ｎｉ層３５５ｂ、Ｃｕ層３５５ｃが配置されて、Ｃｕ層３５５ｃが基板６に接触しており、接合材料５とＡｕ層３５５ａとの密着性が弱く、両者の間で、３９５に示すようなハガレ部分が生じる可能性がある。
【０１３５】
そこで、本第８実施形態では、凸部３５５の代わりに、接合材料流動規制部材の一例としてメッシュ状の電極３６９とする。すなわち、回路形成体の一例としての回路基板６−８のＩＣチップ接合領域６ａ−８の中で、配線密度が所定値以下の領域でかつ中心より偏心した領域に、回路基板６−８の接合材料流動規制部材の一例としてのメッシュ状の電極３６９を備える。このメッシュ状の電極３６９は、例えば金製の電極をメッシュにして、封止樹脂の接合材料５に対するアンカー効果により、接合材料５と接着しやすいものとすることができる。
【０１３６】
このように、第８実施形態によれば、メッシュ状の電極３６９を配置することにより、回路基板６−８のＩＣチップ接合領域６ａ−８内での電極パターンの配線密度の均一化を図ることができ、接合材料５の流動の均一化を図り、電子部品の一例としての正方形のＩＣチップ１−８の接合面と回路基板６−８のＩＣチップ接合領域６ａ−８との間から外側にはみ出る接合材料５のはみ出し量を均一化させて、接続の安定化を図ることができる。さらに、このような効果に加えて、メッシュ状の電極３６９のメッシュを構成する貫通穴部分３６９ｈ，…，３６９ｈで基板６−８が露出し、メッシュ状の電極３６９上に配置する接合材料５が上記貫通穴部分３６９ｈ，…，３６９ｈを貫通して基板６−８に直接接触することになる。この結果、メッシュ状電極３６９の貫通穴部分３６９ｈ，…，３６９ｈで接合材料５が基板６−８と直接密着接合することになり、接合材料５と基板６−８との密着性を向上させることができる。
【０１３７】
（第９実施形態）
本発明の第９実施形態にかかる電子部品の実装方法及びその方法により製造される電子部品実装体の一例としての、ＩＣチップの実装方法及びその方法により製造されるＩＣチップ実装体を図４０〜図４１に基づいて説明する。図４０（Ａ），（Ｂ）は第９実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び平面図であり、図４１（Ａ），（Ｂ）は圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面及び一部拡大断面側面図である。
【０１３８】
第９実施形態では、第７実施形態のソルダーレジスト又は銅箔による凸部３５５において、接合材料５と凸部３５５との密着性を向上させるものである。すなわち、第７実施形態のような凸部３５５を形成したのち、回路基板６−９のＩＣチップ接合領域６ａ−９の外側及び内側全域に、凸部３５５を含み、かつ、各電極７の各バンプ２との接合に必要な接合部を含む領域３４０を除いて、大略全面的に、接合材料流動規制部材の一例としての有機膜３３９を配置して、有機膜３３９により接合材料５の流動規制を行うものである。よって、この第９実施形態では、凸部３５５と有機膜３３９との両方が接合材料流動規制部材の一例として機能する。
【０１３９】
上記有機膜３３９は、第５実施形態で使用した有機膜３３９と同様なものであり、例えば、他の配線又はバンプなどとの電気的な接触を防止して絶縁性を保持し導体を保護する耐熱性コーティングとして機能する、ポリイミド又はポリベンザオキサゾール（ＰＢＯ）などのソルダーレジストより構成される。そのような有機膜３３９を例えば厚さ３〜７μｍ程度だけスピンコートして、回路基板６−９のＩＣチップ接合領域６ａ−９及びその外側に全面的に塗布する。その後、図４０に示すように、電極７，…，７のうちバンプ２，…，２との接合に必要な接合部を含む領域３４０を帯状に除去して当該接合部を露出させる。除去する領域３４０は帯状に独立していてもよいし、連結されて枠状に形成されていてもよい。この結果、有機膜３３９を、凸部３５５を含む、回路基板６−９のＩＣチップ接合領域６ａ−９外側及び内側全域に、各電極７の各バンプ２との接合部を除いて大略全面的に形成する。
【０１４０】
上記第９実施形態によれば、上記したように、凸部３５５を含む、回路基板６−９のＩＣチップ接合領域６ａ−９外側及び内側全域に、各電極７の各バンプ２との接合部を除いて大略全面的に有機膜３３９を配置することにより、上記圧着工程での上記ＩＣチップ１−９の上記接合面と上記回路基板６−９のＩＣチップ接合領域６ａ−９との間の上記接合材料５の中央部から周辺部への接合材料５の流動時に有機膜３３９が接合材料流動規制部材として機能し、ＩＣチップ１−９の各辺の辺部近傍での上記接合材料５の中央部から周辺部への流動の大略均一化を図り、かつ、ＩＣチップ１−９の接合面内での接合材料５の分布の均一化が図れ、密着力が向上し、接合及び封止の信頼性を高めることができる。
【０１４１】
（第１０実施形態）
本発明の第１０実施形態にかかる電子部品の実装方法及びその方法により製造される電子部品実装体の一例としての、ＩＣチップの実装方法及びその方法により製造されるＩＣチップ実装体を図４２〜図４５に基づいて説明する。図４２は第１０実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の平面図であり、図４３は圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。図４４は第１０実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の回路基板の平面図であり、図４５は従来例の圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【０１４２】
第１実施形態では、正方形のＩＣチップ１−１０の電極７の無い各コーナー部付近において、ダミー電極３０３を１個又は複数個配置するようにしていたが、第１０実施形態として、ダミー電極３０３に替えて、接合材料流動規制部材の一例として有機膜３６０を配置することにより、第１実施形態と同様な作用効果を奏するようにすることもできる。
【０１４３】
すなわち、図４２に示すように、接合材料５の一例としてのシート材を使用し、電子部品の一例としての正方形のＩＣチップ１−１０の接合面に対応する、回路形成体の一例としての回路基板６−１０の正方形のＩＣチップ接合領域６ａ−１０の電極７が配置されていない各コーナー部付近を全て覆うように、接合材料流動規制部材の一例として、有機膜３６０を配置して、有機膜３６０により接合材料５の流動規制を行うものである。
【０１４４】
有機膜３６０は、各コーナー部付近のみに配置したり、各コーナー部付近に配置したものを相互に連結して四角形枠状に配置してもよい。
【０１４５】
従来では、図４４及び図４５に示すように、基板７０６のＩＣチップ接合領域７０６ａの電極７０７が欠けている位置すなわち各コーナー部付近から接合材料７０５がより大きな流動速度でＩＣチップ接合領域７０６ａの外側に基板沿いに流れ出して接合材料７０５の密度が低下してしまい、ＩＣチップ７０１の側面を封止する樹脂量が不足となり、ＩＣチップ７０１の側面を封止するフィレットが小さくなり、ＩＣチップ接合領域の周辺部でのＩＣチップ７０１と接合材料７０５との間で剥離が発生したり、基板７０６の電極７０７と接合材料７０５との間で剥離が発生したりすることになる。
【０１４６】
これに対して、第１０実施形態では、ＩＣチップ接合領域６ａ−１０の電極７が配置されていない各コーナー部付近を全て覆うように、接合材料流動規制部材の一例として、有機膜３６０を配置して、上記問題を解決するようにしている。
【０１４７】
上記第１０実施形態によれば、回路基板６−１０の正方形ＩＣチップ接合領域６ａ−１０において、その四隅のコーナー部を除く４辺の各辺の辺部近傍に大略等間隔に一列の電極７，…，７を有するものであって、回路基板６−１０のＩＣチップ接合領域６ａ−１０の上記辺の辺部近傍での電極７の無いコーナー部に有機膜３６０を配置することによって、上記圧着工程での上記ＩＣチップ１−１０の上記接合領域と上記回路基板６−１０のＩＣチップ接合領域６ａ−１０との間の上記接合材料５の中央部から周辺部のコーナー部への接合材料５の流動時に、電極７の無いコーナー部においても有機膜３６０が接合材料流動規制部材として機能し、基板６−１０のＩＣチップ接合領域６ａ−１０の中央部での流動速度ＳＰ１と、基板６−１０のＩＣチップ接合領域６ａ−１０の周辺部での流動速度ＳＰ２とが大略同じになり、ＩＣチップ接合領域６ａ−１０の各辺の辺部近傍及び各コーナー部付近での上記接合材料５の中央部から周辺部のコーナー部への流動の大略均一化を図り、かつ、ＩＣチップ１−１０の接合面言い替えれば上記回路基板６−１０のＩＣチップ接合領域６ａ−１０内での接合材料５の分布の均一化が図れるとともに、各コーナー部において有機膜３６０により接合材料５の回路基板表面沿いの流動を堰止めて盛り上げることにより、ＩＣチップ１−１０の側面を覆うフィレット５Ａを形成することができる。このように、ＩＣチップ１−１０の接合面内及び回路基板６−１０のＩＣチップ接合領域６ａ−１０内での接合材料５の分布の均一化が図れる結果として接合材料５の密度の低下を防止することができて、ＩＣチップ接合領域６ａ−１０の中央部と周辺部、特にコーナー部、でのＩＣチップ１−１０と接合材料５との密着性を増加させるとともに、基板６−１０の電極７又は有機膜３６０と接合材料５との間での密着性を増加させることにより、上記剥離を防止できるようにして、接合及び封止の信頼性を高めることができる。
【０１４８】
なお、上記した第１〜第１０実施形態において、上記各バンプ２は予めレベリングして高さを揃えたのち回路基板の各電極７に接触させるものの他、予めレベリングを行うことなく、各バンプ２を回路基板の各電極７に接触させて各電極７でレベリングを行ういわゆるノンスタッドバンプ（ＮＳＤ）形式の実装方法を採用することもできる。このノンスタッドバンプ（ＮＳＤ）形式の実装方法について以下に説明する。
【０１４９】
上記各実施形態における回路基板（以下では代表的に４０６で示す。）へのＩＣチップ（以下では代表的に４０１で示す。）の実装方法を図４８（Ａ）〜図５１（Ｃ）を用いて説明する。
【０１５０】
図４８（Ａ）のＩＣチップ４０１においてＩＣチップ４０１のＡｌパッド電極（以下では代表的に４０４で示す。）にワイヤボンディング装置により図４７（Ａ）〜図４７（Ｆ）のごとき動作によりバンプ（突起電極）（以下では代表的に４０２で示す。）を形成する。すなわち、図４７（Ａ）でホルダ１９３から突出したワイヤ１９５の下端にボール１９６を形成し、図４７（Ｂ）でワイヤ１９５を保持するホルダ１９３を下降させ、ボール１９３をＩＣチップ４０１の電極４０４に接合して大略バンプ４０２の形状を形成し、図４７（Ｃ）でワイヤ１９５を下方に送りつつホルダ１９３の上昇を開始し、図４７（Ｄ）に示すような大略四角形のループ１９９にホルダ１９３を移動させて図４７（Ｅ）に示すようにバンプ４０２の上部に湾曲部１９８を形成し、引きちぎることにより図４７（Ｆ）に示すようなバンプ４０２を形成する。あるいは、図４７（Ｂ）でワイヤ１９５をホルダ１９３でクランプして、ホルダ１９３を上昇させて上方に引き上げることにより、金ワイヤ１９５を引きちぎり、図４７（Ｇ）のようなバンプ４０２の形状を形成するようにしてもよい。このように、ＩＣチップ４０１の各電極４０４にバンプ４０２を形成した状態を図４８（Ｂ）に示す。一例としては、上記各ダミーバンプも上記バンプ４０２と同様に形成する。
【０１５１】
次に、図４８（Ｃ）に示す回路基板４０６の電極４０７上に、図４８（Ｄ）に示すように、ＩＣチップ４０１の大きさより若干大きな寸法にてカットされた接合材料の一例としての熱硬化性樹脂シート（以下では代表的に４０５で示す。）を配置し、例えば８０〜１２０℃に熱せられた貼付けツール４０８Ａにより、例えば４９〜９８Ｎ（５〜１０ｋｇｆ／ｃｍ2）程度の圧力で上記接合材料の具体例としての熱硬化性樹脂シート４０５を基板４０６の電極４０７上に貼り付ける。この後、熱硬化性樹脂シート４０５のツール４０８Ａ側に取り外し可能に配置されたセパレータ４０５ａを剥がすことにより、基板４０６の準備工程が完了する。このセパレータ４０５ａは、ツ−ル４０８Ａに熱硬化性樹脂シート４０５が貼り付くのを防止するためのものである。ここで、熱硬化性樹脂シート４０５は、シリカなどの無機系フィラーを入れたもの（例えば、エポキシ樹脂、フェノール樹脂、ポリイミドなど）、無機系フィラーを全く入れないもの（例えば、エポキシ樹脂、フェノール樹脂、ポリイミドなど）が好ましいとともに、後工程のリフロー工程での高温に耐えうる程度の耐熱性（例えば、２４０℃に１０秒間耐えうる程度の耐熱性）を有することが好ましい。
【０１５２】
次に、図４８（Ｅ）及び図４９（Ｆ）に示すように、熱せられた接合ツール４０８により、上記前工程でバンプ４０２が電極４０４上に形成されたＩＣチップ４０１を、上記前工程で準備された基板４０６のＩＣチップ４０１の電極４０４に対応する電極４０７上に位置決めしたのち押圧する。このとき、バンプ４０２は、その頭部４０２ａが、基板４０６の電極４０７上で図５１（Ａ）から図５１（Ｂ）に示すように変形されながら押しつけられていく、このときＩＣチップ４０１を介してバンプ４０２側に印加する荷重は、バンプ４０２の径により異なるが、折れ曲がって重なり合うようになっているバンプ４０２の頭部４０２ａが、必ず図５１（Ｃ）のように変形する程度の荷重を加えることが必要である。この荷重は最低でも１９６ｍＮ（２０ｇｆ）を必要とする。荷重の上限は、ＩＣチップ４０１、バンプ４０２、回路基板４０６などが損傷しない程度とする。場合によって、その最大荷重は９８０ｍＮ（１００ｇｆ）を越えることもある。なお、４０５ｍ及び４０５ｓは熱硬化性樹脂シート４０５が接合ツール４０８の熱により溶融した溶融中の熱硬化性樹脂及び溶融後に熱硬化された樹脂である。
【０１５３】
なお、セラミックヒータ又はパルスヒータなどの内蔵するヒータにより熱せられた接合ツール４０８により、上記前工程でバンプ４０２が電極４０４上に形成されたＩＣチップ４０１を、上記前工程で準備された基板４０６のＩＣチップ４０１の電極４０４に対応する電極４０７上に位置決めする位置決め工程と、位置決めしたのち押圧接合する工程とを１つの位置決め兼押圧接合装置で行うようにしてもよい。しかしながら、別々の装置、例えば、多数の基板を連続生産する場合において位置決め作業と押圧接合作業とを同時的に行うことにより生産性を向上させるため、位置決め工程は位置決め装置で行い、押圧接合工程は接合装置で行うようにしてもよい。
【０１５４】
このとき、一例として、回路基板４０６は、ガラス布積層エポキシ基板（ガラエポ基板）やガラス布積層ポリイミド樹脂基板などが用いられる。これらの基板４０６は、熱履歴や、裁断、加工により反りやうねりを生じており、必ずしも完全な平面ではないため、適宜、回路基板４０６の反りが矯正された状態で、例えば１４０〜２３０℃の熱が、ＩＣチップ４０１と回路基板４０６の間の熱硬化性樹脂シート４０５に例えば数秒〜２０秒程度印加され、この熱硬化性樹脂シート４０５が硬化される。このとき、最初は熱硬化性樹脂シート４０５を構成する熱硬化性樹脂が流れてＩＣチップ４０１のエッヂまで封止する。また、樹脂であるため、加熱されたとき、当初は自然に軟化するためこのようにエッヂまで流れるような流動性が生じる。熱硬化性樹脂の体積はＩＣチップ４０１と回路基板との間の空間の体積より大きくすることにより、この空間からはみ出すように流れ出て、封止効果を奏することができる。このとき、上記した各実施形態の接合材料流動規制部材により適宜流動規制が行われる。
【０１５５】
この後、加熱されたツール４０８が上昇することにより、加熱源がなくなるためＩＣチップ４０１と熱硬化性樹脂シート４０５の温度が急激に低下して、熱硬化性樹脂シート４０５は流動性を失い、図４９（Ｇ）及び図５１（Ｃ）に示すように、ＩＣチップ４０１は硬化した熱硬化性樹脂４０５ｓにより回路基板４０６上に固定される。また、回路基板４０６側をステージ４１０により加熱しておくと、接合ツール４０８の温度をより低く設定することができる。
【０１５６】
また、熱硬化性樹脂シート４０５を貼り付ける代わりに、図５０（Ｈ）に示すように熱硬化性接着剤４０５ｂを回路基板４０６上に、ディスペンスなどによる塗布、又は印刷、又は転写するようにしてもよい。熱硬化性接着剤４０５ｂを使用する場合は、基本的には上記した熱硬化性樹脂シート４０５を用いる工程と同一の工程を行う。熱硬化性樹脂シート４０５を使用する場合には、固体ゆえに取り扱いやすいとともに、液体成分が無いため高分子で形成することができ、ガラス転移点の高いものを形成しやすいといった利点がある。これに対して、熱硬化性接着剤４０５ｂを使用する場合には、基板４０６の任意の位置に任意の大きさに塗布、印刷、又は転写することができる。
【０１５７】
また、熱硬化性樹脂に代えて異方性導電膜（ＡＣＦ）を用いてもよく、さらに、異方性導電膜に含まれる導電粒子として、ニッケル粉に金メッキを施したものを用いることにより、電極４０７とバンプ４０２との間での接続抵抗値を低下せしめることができて尚好適である。
【０１５８】
なお、図４８（Ａ）から図４８（Ｇ）には熱硬化性樹脂シート４０５を回路基板４０６側に形成することについて説明し、図５０（Ｈ）には熱硬化性接着剤４０５ｂを回路基板４０６側に形成することについて説明したが、これに限定されるものではなく、図５０（Ｉ）又は図５０（Ｊ）に示すように、ＩＣチップ４０１側に形成するようにしてもよい。この場合、特に、熱硬化性樹脂シート４０５の場合には、熱硬化性樹脂シート４０５の回路基板側に取り外し可能に配置されたセパレータ４０５ａとともにゴムなどの弾性体１１７にＩＣチップ４０１を押し付けて、バンプ４０２の形状に沿って熱硬化性樹脂シート４０５がＩＣチップ４０１に貼り付けられるようにしてもよい。
【０１５９】
このようなノンスタッドバンプ（ＮＳＤ）形式の実装方法では、各バンプの先端部分を回路基板の各電極上で潰すため回路基板に対するＩＣチップの押し込み量（押圧量）が大きくなる。すると、接合材料をＩＣチップの接合面の周辺部側に流動させる力が大きくなり、上記ダミーバンプ又は凸部又は有機膜などの上記接合材料流動規制部材による接合材料の流動規制機能がより効果的に働くことになり、ＮＳＢ（ノンスタッドバンプ）ではより規制効果が大きくなる。
【０１６０】
一例として、ノンスタッドバンプ（ＮＳＤ）形式の実装方法では、例えば、直径７５μｍのバンプにおいて回路基板の電極に対して押し付けて潰すことにより電気的接合を得るとき高さにおいて３５μｍだけ短くなるようにバンプを潰すようにしている。このとき、ＩＣチップを回路基板に向けて押し付けるとき両者の間から接合材料が大きく押し出されるため、上記接合材料流動規制部材により上記接合材料の流出を規制し規制することにより、ＩＣチップ中央部分での接合材料の密度の低下を効果的に防止することができる。よって、このようなノンスタッドバンプ形式の実装方法では、接合材料の流出に対する抑制力が大きく期待できる。
【０１６１】
なお、上記第２実施形態において、バンプ２とダミーバンプ３との形状は大略同一であることが接合材料の流動規制を大略均一に行うためには好ましいが、これに限られるものではなく、許容される範囲内で異なる形状や高さとしてもよい。また、バンプとダミーバンプとの材質は異なるものにしてもよい。
【０１６２】
また、上記第２実施形態において、バンプ２とバンプ２の間隔、又はバンプ２とダミーバンプ３との間隔、ダミーバンプ３とダミーバンプ３の間隔は大略均一である場合を中心として説明したが、これに限られるものではなく、許容される範囲内で不均一な間隔となっていてもよい。この場合、許容される範囲外の部分にダミーバンプ３を配置することになる。
【０１６３】
なお、上記第１及び第２実施形態において、電極７２とダミー電極３０３又は３１３との形状は大略同一であることが接合材料の流動規制を大略均一に行うためには好ましいが、これに限られるものではなく、許容される範囲内で異なる形状や高さとしてもよい。また、電極７とダミー電極３０３又は３１３との材質は異なるものにしてもよい。
【０１６４】
また、上記第１及び第２実施形態において、電極７と電極７の間隔、又は電極７とダミー電極３０３又は３１３との間隔、ダミー電極３０３又は３１３とダミー電極３０３又は３１３の間隔は大略均一である場合を中心として説明したが、これに限られるものではなく、許容される範囲内で不均一な間隔となっていてもよい。この場合、許容される範囲外の部分にダミー電極３０３又は３１３を配置することになる。
【０１６５】
上記第２実施形態においては、接合材料流動規制部材として、ＩＣチップの電極４上にダミーバンプ３を形成する例について説明したが、本発明はこれに限られるものではなく、図５２に示すように、樹脂ペーストの印刷又はディペンスなどにより、上記ＩＣチップに直接的にダミーバンプと大略同等の高さのダミーバンプ状の突部２３Ａを形成するようにしてもよい。
【０１６６】
また、上記電子部品の接合面の電極４上にバンプ２を形成するようにしているが、バンプ２の代わりに、上記電子部品の接合面に電極４上に突出した凸状電極を形成するようにしてもよい。
【０１６７】
また、上記各実施形態において、ＩＣチップと回路基板との間からはみ出る接合材料５が、上記接合材料流動規制部材により流動規制を受けて、ＩＣチップの側面に対する盛り上がり部分であるフィレット５Ａを大きくする場合、ＩＣチップの側面をその厚みにおいて回路基板側から半分程度まで覆うように盛り上げることができる。すなわち、従来では、バンプ又はパッシベーション膜が配置されている部分では流動規制を受けるが、バンプ又はパッシベーション膜が配置されていない部分ではそのような規制を受けないため、フィレットを大きくすることができず、例えば、ＩＣチップの厚さが０．４ｍｍのとき０．１ｍｍ程度しかフィレットを形成することができなかった。しかしながら、上記各実施形態では、上記したように上記接合材料５が流動規制を受けるため、例えば、ＩＣチップの厚さが０．４ｍｍのとき０．２〜０．３ｍｍの高さまでフィレットが形成されることになり、フィレット５Ａを大きくすることができる。この結果、フィレットが小さい場合には、ＩＣチップと接合材料と又は基板と接合材料との界面に水分の侵入経路が形成されやすく、また、その経路も短いものであり、耐湿信頼性に劣るものであり、かつ、ヒートサイクル時に基板のソリに対して弱いものであった。しかしながら、フィレット５Ａが大きくなる結果、ＩＣチップと接合材料５と又は回路基板と接合材料５との界面に水分の侵入経路が形成されにくくなり、また、その経路も長くすることができて、耐湿信頼性に優れたものとなり、かつ、例えば−６５℃〜１５０℃までのヒートサイクル時での熱による基板のソリに対して強いものとなる。
【０１６８】
なお、上記実施形態のうち、ダミーバンプが配置されていない実施形態でも、ダミーバンプを配置するようにすれば、ＩＣチップ全面で接合樹脂の流動を均一化させることができる。
【０１６９】
なお、上記様々な実施形態のうちの任意の実施形態を適宜組み合わせることにより、それぞれの有する効果を奏するようにすることができる。
【０１７０】
【発明の効果】
本発明によれば、四角形すなわち正方形又は長方形のＩＣチップなどの電子部品を回路基板などの回路形成性体に押圧力により押し付けて接合材料を介して両者を接合するものにおいて、接合材料が不均一に流出する部分に上記接合材料流動規制部材を配置するようにしたので、上記電子部品を上記回路形成体に接合するとき両者の間の上記接合材料の流動が上記接合材料流動規制部材により規制されて、上記電子部品接合領域の中央部から周辺部への上記接合材料の流動の大略均一化を図り、かつ、電子部品接合領域内での接合材料の分布の均一化が図れ、密着力が向上し、接合及び封止の信頼性を高めることができる。
【０１７１】
より具体的には、本発明の一態様によれば、上記回路形成体の上記電子部品接合領域が四角形であり、その四角形の上記電子部品接合領域のうち対向する２対の辺のそれぞれに上記複数のバンプが形成されている場合にバンプが無いコーナー部に対応する上記回路形成体の上記電子部品接合領域のコーナー部に備えられかつ電気的接合を必要としない凸部を形成する場合、凸部がダミー電極であるときには、電極の配列状態を電子部品の各辺の辺部近傍及び各コーナー部付近とも大略同一にすることができる一方、凸部が有機膜であるときには、電子部品の各辺の辺部近傍及び各コーナー部付近に電極に代わる有機膜の凸部を配置することができる。この結果、圧着工程での上記電子部品の上記接合領域と上記回路形成体の電子部品接合領域との間の上記接合材料の中央部から周辺部のコーナー部への接合材料の流動時に上記凸部が接合材料流動規制部材として機能し、回路形成体の電子部品接合領域の中央部での流動速度と、回路形成体の電子部品接合領域の周辺部での流動速度とが大略同じになり、電子部品接合領域の各辺の辺部近傍及び各コーナー部付近での上記接合材料の中央部から周辺部のコーナー部への流動の大略均一化を図り、かつ、電子部品の接合面言い替えれば上記回路形成体の電子部品接合領域内での接合材料の分布の均一化が図れる。このように、電子部品の接合面内及び回路形成体の電子部品接合領域内での接合材料の分布の均一化が図れる結果として接合材料の密度の低下を防止することができて、電子部品接合領域の中央部と周辺部、特にコーナー部、での電子部品と接合材料との密着性を増加させるとともに、回路形成体の電極又は上記凸部と接合材料との間での密着性を増加させることにより、上記剥離を防止できるようにして、接合及び封止の信頼性を高めることができる。
【０１７２】
また、本発明の別の態様によれば、四角形すなわち正方形又は長方形の電子部品の接合面において、その四隅のコーナー部を除く４辺の各辺の辺部近傍に大略等間隔に一列のバンプを有するものであって、電子部品の接合面の上記辺の辺部近傍でのバンプの無い箇所にダミーバンプを形成するとともに、回路形成体の電子部品接合領域の上記辺の辺部近傍での電極の無い箇所にダミー電極を形成する場合には、バンプの配列状態を電子部品の各辺の辺部近傍とも大略同一にすることができるとともに電極の配列状態を回路形成体の電子部品接合領域の各辺の辺部近傍とも大略同一にすることができて、上記圧着工程での上記電子部品の上記接合面と上記回路形成体の電子部品接合領域との間の上記接合材料の中央部から周辺部への接合材料の流動時にダミーバンプ及びダミー電極が接合材料流動規制部材として機能し、電子部品の各辺の辺部近傍及び回路形成体の電子部品接合領域の各辺の辺部近傍での上記接合材料の中央部から周辺部への流動の大略均一化を図り、かつ、電子部品の接合面内及び回路形成体の電子部品接合領域内での接合材料の分布の均一化が図れ、密着力が向上し、接合及び封止の信頼性を高めることができる。また、電子部品の接合面内及び回路形成体の電子部品接合領域内での接合材料の分布の均一化が図れる結果として接合材料の密度の低下を防止することができて、電子部品の側面を封止するために十分な量の接合材料が供給され、電子部品の側面を封止するフィレットを大きくすることができて、電子部品接合領域の周辺部での電子部品と接合材料との間で剥離や回路形成体の電極と接合材料との間で剥離を効果的に防止することができる。
【０１７３】
また、本発明の別の態様によれば、回路形成体の電子部品接合領域の外側及び上記電子部品接合領域の周辺部に有機膜を配置する場合には、有機膜が、接合材料流動規制部材の一例の接合材料流動規制膜として接合材料の流動規制を行うことができる。この結果、有機膜が無い場合と比較して、上記圧着工程での上記電子部品の上記接合面と上記回路形成体の電子部品接合領域との間の上記接合材料の中央部から周辺部への接合材料の流動時に、有機膜が接合材料流動規制部材として機能して電子部品と回路形成体との間での流動速度を低下させることができ、上記接合材料の中央部から周辺部への流動の大略均一化を図り、かつ、電子部品の接合面内での接合材料の分布の均一化が図れ、密着力が向上し、接合及び封止の信頼性を高めることができる。
【０１７４】
また、本発明の別の態様によれば、上記回路形成体の上記電子部品接合領域が四角形でありかつ上記四角形の上記電子部品接合領域のうち中央に一列の上記複数の電極が配置されて電子部品が回路形成体に対して短手方向すなわち幅方向に１点で支持され、かつ、その両側に有機膜を配置する場合には、バンプの列の両側において、有機膜が無い場合と比較して、電子部品と回路形成体との間での流動速度を低下させることができて、上記圧着工程での上記電子部品の上記接合面と上記回路形成体の電子部品接合領域との間の上記接合材料の中央部から周辺部への接合材料の流動時に有機膜が接合材料流動規制部材として機能し、上記接合材料の中央部から周辺部への流動の大略均一化を図り、かつ、電子部品の接合面内での接合材料の分布の均一化が図れ、密着力が向上し、接合及び封止の信頼性を高めることができる。
【０１７５】
また、本発明の別の態様によれば、回路形成体の電子部品接合領域の外側及び内側全域に、電極のバンプとの接合部を除いて、大略全面的に、接合材料流動規制部材の一例としての有機膜を配置する場合には、上記圧着工程での上記電子部品の上記接合面と上記回路形成体の電子部品接合領域との間の上記接合材料の中央部から周辺部への接合材料の流動時に有機膜が接合材料流動規制部材として機能し、電子部品の各辺の辺部近傍での上記接合材料の中央部から周辺部への流動の大略均一化を図り、かつ、電子部品の接合面内での接合材料の分布の均一化が図れ、密着力が向上し、接合及び封止の信頼性を高めることができる。
【０１７６】
また、本発明の別の態様によれば、回路形成体の電子部品接合領域から所定間隔を空けて電子部品接合領域を囲むような四角形枠状の領域にフィレット形成用凸部を接合材料流動規制部材の一例として配置する場合には、上記圧着工程での上記電子部品の上記接合面と上記回路形成体の電子部品接合領域との間の上記接合材料の電子部品接合領域の外側への接合材料の流動時に、フィレット形成用凸部により、上記押し出されて回路基板表面沿いに流れ出てきた接合材料が堰止められて盛り上がり、電子部品の側面に大きなフィレットを形成することができて、電子部品の側面の封止力を向上させることができて、密着力が向上し、接合及び封止の信頼性を高めることができる。
【０１７７】
また、本発明の別の態様によれば、回路形成体の電子部品接合領域の内で上記接合材料が不均一な流動を示す領域、例えば、電子部品接合領域内の電極配線密度が所定値以下の領域でかつ中心より偏心した領域に、回路形成体の電極の厚みと大略同一厚みの接合材料流動規制部材としての凸部を備える場合には、回路形成体の電子部品接合領域内でパターン配線密度の均一化を図ることができ、接合材料の流動の均一化を図り、電子部品と回路形成体との間から外側にはみ出る接合材料のはみ出し量を均一化させて、接合の安定化を図ることができる。また、フィレット形成用凸部が１層以上の膜で構成されている場合でソルダーレジストで形成される場合には、フィレットを形成する樹脂との密着性が高く、封止力がより向上する。
【０１７８】
また、本発明の別の態様によれば、上記凸部としてメッシュ状の電極又は貫通穴を有する電極を配置する場合には、回路形成体の電子部品接合領域内での電極パターンの配線密度の均一化を図ることができ、接合材料の流動の均一化を図り、電子部品の一例としての正方形の電子部品の接合面と回路形成体の電子部品接合領域との間から外側にはみ出る接合材料のはみ出し量を均一化させて、接続の安定化を図ることができる。さらに、このような効果に加えて、上記電極のメッシュを構成する貫通穴部分又は上記貫通穴で回路形成体が露出し、上記電極上に配置する接合材料が上記貫通穴部分又は上記貫通穴を貫通して回路形成体に直接接触することになる。この結果、上記電極の貫通穴部分又は上記貫通穴で接合材料が回路形成体と直接密着接合することになり、接合材料と回路形成体との密着性を向上させることができる。
【０１７９】
また、本発明の別の態様によれば、上記凸部を含む、回路形成体の電子部品接合領域外側及び内側全域に、各電極の各バンプとの接合部を除いて大略全面的に有機膜を配置する場合には、上記圧着工程での上記電子部品の上記接合面と上記回路形成体の電子部品接合領域との間の上記接合材料の中央部から周辺部への接合材料の流動時に有機膜が接合材料流動規制部材として機能し、電子部品の各辺の辺部近傍での上記接合材料の中央部から周辺部への流動の大略均一化を図り、かつ、電子部品の接合面内での接合材料の分布の均一化が図れ、密着力が向上し、接合及び封止の信頼性を高めることができる。
【０１８０】
また、本発明の別の態様によれば、回路形成体の正方形電子部品接合領域において、その四隅のコーナー部を除く４辺の各辺の辺部近傍に大略等間隔に一列の電極を有するものであって、回路形成体の電子部品接合領域の上記辺の辺部近傍での電極の無いコーナー部に有機膜を配置する場合には、上記圧着工程での上記電子部品の上記接合領域と上記回路形成体の電子部品接合領域との間の上記接合材料の中央部から周辺部のコーナー部への接合材料の流動時に、電極の無いコーナー部においても有機膜が接合材料流動規制部材として機能し、回路形成体の電子部品接合領域の中央部での流動速度と、回路形成体の電子部品接合領域の周辺部での流動速度とが大略同じになり、電子部品接合領域の各辺の辺部近傍及び各コーナー部付近での上記接合材料の中央部から周辺部のコーナー部への流動の大略均一化を図り、かつ、電子部品の接合面言い替えれば上記回路形成体の電子部品接合領域内での接合材料の分布の均一化が図れるとともに、各コーナー部において有機膜により接合材料の回路基板表面沿いの流動を堰止めて盛り上げることにより、電子部品の側面を覆うフィレットを形成することができる。このように、電子部品の接合面内及び回路形成体の電子部品接合領域内での接合材料の分布の均一化が図れる結果として接合材料の密度の低下を防止することができて、電子部品接合領域の中央部と周辺部、特にコーナー部、での電子部品と接合材料との密着性を増加させるとともに、回路形成体の電極又は有機膜と接合材料との間での密着性を増加させることにより、上記剥離を防止できるようにして、接合及び封止の信頼性を高めることができる。
【０１８１】
また、上記各態様にかかる方法より製造された電子部品実装体、又は、上記各態様に記載したような接合材料流動規制部材を備える電子部品実装体では、接合材料流動規制部材により接合材料の不均一な流動が規制されて電子部品接合領域内での接合材料の分布の均一化が図れた状態で、当該接合材料により電子部品と回路形成体とが密着接合されかつ封止されているため、接合及び封止の信頼性が高いものとすることができ、高品質のものとなる。
【図面の簡単な説明】
【図１】 （Ａ），（Ｂ）はそれぞれ本発明の第１実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び平面図である。
【図２】 （Ａ），（Ｂ）はそれぞれ第１実施形態にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面図及びＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【図３】 第１実施形態にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【図４】 （Ａ），（Ｂ）はそれぞれ第１実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の上記回路基板の側面図及び平面図である。
【図５】 （Ａ），（Ｂ）はそれぞれ図４に続く従来例にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面図及びＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【図６】 図５に続く従来例にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【図７】 （Ａ），（Ｂ）はそれぞれ本発明の第２実施形態にかかるＩＣチップの実装方法の接合工程前のＩＣチップの側面図及び平面図である。
【図８】 （Ａ），（Ｂ）はそれぞれ第２実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【図９】 第２実施形態にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【図１０】 （Ａ）及び（Ｂ）は第２実施形態を説明するための従来例にかかる電子部品の実装方法の接合工程前のＩＣチップの側面図及び裏面図である。
【図１１】 （Ａ）は図１０に続く従来例にかかる電子部品の実装方法の接合工程前の回路基板の側面図であり、（Ｂ）は図１０の従来例の圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【図１２】 図１１に続く従来例にかかる電子部品の実装方法の上記圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【図１３】 （Ａ）及び（Ｂ）は本発明の第３実施形態にかかるＩＣチップの実装方法の接合工程前の上記回路基板の側面図及び平面図であり、（Ｃ）は上記圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面図である。
【図１４】 上記第３実施形態にかかる上記ＩＣチップの実装方法の上記接合工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【図１５】 （Ａ）及び（Ｂ）はそれぞれ上記第３実施形態を説明するための従来例にかかる電子部品の実装方法の接合工程前の上記回路基板の側面図及び平面図であり、（Ｃ）は上記従来例の圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面図である。
【図１６】 図１５の上記従来例の圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【図１７】 （Ａ）及び（Ｂ）はそれぞれ本発明の第４実施形態にかかるＩＣチップの実装方法の接合工程前の上記ＩＣチップの側面図及び裏面図である。
【図１８】 上記第４実施形態にかかるＩＣチップの実装方法の圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【図１９】 上記第４実施形態にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面図である。
【図２０】 （Ａ）及び（Ｂ）は上記第４実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の上記ＩＣチップの側面図及び裏面図である。
【図２１】 図２０の従来例の圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【図２２】 図２０の従来例の圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面図である。
【図２３】 （Ａ）及び（Ｂ）はそれぞれ本発明の第５実施形態にかかるＩＣチップの実装方法の接合工程前の上記ＩＣチップの側面図及び裏面図である。
【図２４】 上記第５実施形態にかかるＩＣチップの実装方法の圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【図２５】 （Ａ）及び（Ｂ）はそれぞれ第５実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の上記ＩＣチップの側面図及び裏面図である。
【図２６】 図２５の従来例の圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【図２７】 （Ａ），（Ｂ）はそれぞれ本発明の第６実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び平面図であり、（Ｃ）は圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面及び部分的に拡大した一部断面側面図である。
【図２８】 第６実施形態にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【図２９】 （Ａ），（Ｂ）はそれぞれ第６実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の上記回路基板の側面図及び平面図であり、（Ｃ）は上記従来例の圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面である。
【図３０】 図２９の従来例の圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【図３１】 （Ａ），（Ｂ）はそれぞれ本発明の第７実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び平面図であり、（Ｃ）は圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面である。
【図３２】 圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【図３３】 （Ａ），（Ｂ）は第７実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び平面図であり、（Ｃ）は圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面である。
【図３４】 図３３の従来例の圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【図３５】 （Ａ），（Ｂ）はそれぞれ本発明の第８実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び平面図である。
【図３６】 （Ａ），（Ｂ）はそれぞれ第８実施形態にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面及び一部拡大断面側面図である。
【図３７】 圧着工程での接合材料の流動状態を示し、ＩＣチップを透視して回路基板上での接合材料の動きを示す平面図である。
【図３８】 第７実施形態を説明するための比較例にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の一部拡大断面側面である。
【図３９】 第７実施形態を説明するための比較例にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の一部拡大断面側面である。
【図４０】 （Ａ），（Ｂ）はそれぞれ本発明の第９実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の側面図及び平面図である。
【図４１】 （Ａ），（Ｂ）はそれぞれ第９実施形態にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の一部断面側面及び一部拡大断面側面図である。
【図４２】 本発明の第１０実施形態にかかるＩＣチップの実装方法の接合工程前の回路基板の平面図である。
【図４３】 第１０実施形態にかかるＩＣチップの実装方法の圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【図４４】 第１０実施形態を説明するための従来例にかかるＩＣチップの実装方法の接合工程前の回路基板の平面図である。
【図４５】 図４４の従来例の圧着工程でのＩＣチップと回路基板と接合材料の部分的に拡大した一部断面側面図である。
【図４６】 上記実施形態においてダミーバンプの配置箇所を説明するための説明図である。
【図４７】 （Ａ），（Ｂ），（Ｃ），（Ｄ），（Ｅ），（Ｆ），（Ｇ）はそれぞれ上記実施形態における実装方法において、ワイヤボンダーを用いたＩＣチップのバンプ形成工程を示す説明図である。
【図４８】 （Ａ），（Ｂ），（Ｃ），（Ｄ），（Ｅ）はそれぞれ上記実施形態においてＩＣチップの実装方法の一例としてノンスタッドバンプ（ＮＳＤ）形式の実装方法を仕様する場合を示す説明図である。
【図４９】 （Ｆ），（Ｇ）はそれぞれ図２７に続く上記実施形態においてＩＣチップの実装方法を示す説明図である。
【図５０】 （Ｈ），（Ｉ），（Ｊ）はそれぞれ図２８に続く上記実施形態においてＩＣチップの実装方法を示す説明図である。
【図５１】 （Ａ），（Ｂ），（Ｃ）はそれぞれ上記実施形態にかかる実装方法において、回路基板とＩＣチップの接合工程を示す説明図である。
【図５２】 （Ａ），（Ｂ）はそれぞれ本発明の第２実施形態の変形例にかかるＩＣチップの実装方法の接合工程前のＩＣチップの側面図及び平面図である。
【符号の説明】
１，１−１，１−２，１−３，１−４，１−５，１−６，１−７，１−８，１−９，１−１０…ＩＣチップ、２…バンプ、３…ダミーバンプ、４…ＩＣチップの電極、５…接合材料、６，６−１，６−２，６−３，６−４，６−５，６−６，６−７，６−８，６−９，６−１０…回路基板、６ａ−１，６ａ−２，６ａ−３，６ａ−４，６ａ−５，６ａ−６，６ａ−７，６ａ−８，６ａ−９，６ａ−１０…回路基板のＩＣチップ接合領域、７…回路基板の電極、８…押圧部材、１０…基台、２３Ａ…ダミーバンプ状の突部、３０３，３１３…ダミー電極、３０９…パッシベーション膜、３１９，３２９，３３９，３５６，３６０…有機膜、３２０…四角形枠領域、３４０…接合に必要な接合部を含む領域、３４５…ダム部、３４８…上側の有機膜、３４９…下側の有機膜、３５５…凸部、３６９…メッシュ状の電極、３９５…ハガレ部分。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electronic component mounting method for bonding and fixing an electronic component such as a semiconductor element to a circuit forming body such as a substrate with a bonding material containing at least a resin, and an electronic component mounting body manufactured thereby.
[0002]
[Prior art]
Conventionally, bumps formed on electrodes on the bonding surface of a rectangular IC chip are brought into contact with the electrodes of the circuit board, and a bonding material is disposed between the IC chip and the circuit board, and the IC chip is circuitized by the bonding material. Some are bonded and held on a substrate.
[0003]
[Problems to be solved by the invention]
However, in the structure described above, the bonding material flows out unevenly in the IC chip bonding region of the circuit board to which the rectangular IC chip is bonded, for example, in the large gap between the electrodes or in the rectangular side portion. When the IC chip is bonded to the circuit board via the bonding material in a gap between corners where the electrodes are not arranged when the electrodes are arranged, the bonding material sandwiched between the IC chip and the circuit board is not Through the gaps between the electrodes on the circuit board, it flows out unevenly to the peripheral part of the IC chip bonding area of the circuit board. Therefore, the density of the bonding material tends to be sparse in the central part of the IC chip bonding area, and the bonding force and sealing The power may be reduced.
[0004]
Therefore, an object of the present invention is to solve the above-described problem, and at the time of joining the electronic component and the circuit forming body, the distribution of the bonding material in the electronic component joining region of the circuit forming body can be made uniform. An object of the present invention is to provide an electronic component mounting method and an electronic component mounting body capable of enhancing the reliability of sealing.
[0005]
[Means for Solving the Problems]
In order to achieve the above object, the present invention is configured as follows.
[0006]
  According to the first aspect of the present invention, a step of supplying a bonding material containing at least a resin to a circuit forming body or an electronic component;
  A plurality of convex electrodes on the joint surface of the electronic component and the circuit forming body;SquareA positioning step of positioning the electronic component and the circuit forming body via the bonding material so that the electrode of the electronic component bonding region can be electrically contacted;
  The electronic component is thermocompression-bonded by heating and pressurization, and the joint surface of the electronic component and the circuit are formed in a state where the convex electrode of the electronic component and the electrode of the circuit forming body are in electrical contact with each other. A main pressure bonding step for curing the bonding material between the body and the body,
  In the main crimping step, a portion where the bonding material flows out unevenly in the electronic component bonding region of the circuit formed bodyAnd the gap between the adjacent electrodes arranged in a row of the square electronic component bonding region of the circuit formed body is provided in a wide interval portion larger than the interval between the other adjacent electrodes. Convex portions that are arranged at equal intervals and that have substantially the same shape as the electrode and do not require electrical bonding.The bonding material flow regulating member regulates the flow of the bonding material toward the peripheral part of the electronic component bonding region of the circuit forming body.As a result, the bonding material is substantially uniformly distributed and maintained in the entire electronic component bonding region.An electronic component mounting method characterized by the above is provided.
[0007]
  According to the second aspect of the present invention, supplying a bonding material containing at least a resin to the circuit forming body or the electronic component;
  A plurality of bumps on a plurality of electrodes on the bonding surface of the electronic component and the circuit formed body;SquareA positioning step of positioning the electronic component and the circuit forming body via the bonding material so that the electrode of the electronic component bonding region can be electrically contacted;
  The electronic component is thermocompression-bonded by heating and pressurization, and the bumps on the electrodes of the electronic component and the electrodes of the circuit forming body are in electrical contact with the joint surface of the electronic component and the electronic component. A main pressure bonding step of curing the bonding material between the circuit formed body and
  In the main crimping step, a portion where the bonding material flows out unevenly in the electronic component bonding region of the circuit formed bodyAnd the gap between the adjacent electrodes arranged in a row of the square electronic component bonding region of the circuit formed body is provided in a wide interval portion larger than the interval between the other adjacent electrodes. Convex portions that are arranged at equal intervals and that have substantially the same shape as the electrode and do not require electrical bonding.The bonding material flow regulating member regulates the flow of the bonding material toward the peripheral part of the electronic component bonding region of the circuit forming body.As a result, the bonding material is substantially uniformly distributed and maintained in the entire electronic component bonding region.An electronic component mounting method characterized by the above is provided.
[0008]
  According to the third aspect of the present invention, the bonding material flow restricting member is formed of the circuit forming body.the aboveWhen the plurality of bumps are formed on each of two opposing sides of the quadrangular electronic component bonding region, the corner portion of the electronic component bonding region of the circuit forming body corresponds to a corner portion where there is no bump. And does not require electrical connectionSecondConvexIt is further equipped withIn the main crimping step, the aboveSecondThe mounting method of the electronic component as described in the 2nd aspect which regulates the flow of the said joining material to the peripheral part side of the said electronic component joining area | region of the said circuit formation body in the said corner part by a convex part is provided.
[0009]
  According to a fourth aspect of the present invention,By restricting the flow of the bonding material to the peripheral side of the electronic component bonding region of the circuit formed body, the bonding material is distributed and held substantially uniformly in the entire electronic component bonding region, and the electronic component A fillet to cover the sides of theFirst1 orThe electronic component mounting method according to the second aspect is provided.
[0010]
  According to the fifth aspect of the present invention, the protrusion is the bonding material flow restricting member.Part isIn the bonding process, dummy bumps that do not require electrical connection on the electronic component sideIsFirstThreeAn electronic component mounting method according to an aspect is provided.
[0011]
  According to the sixth aspect of the present invention, in the main crimping step, the joining material flow regulating member2nd joining material flow regulation member different fromAs a result of the organic film disposed on the outside of the electronic component bonding region of the circuit forming body and on the periphery of the electronic component bonding region, the bonding material to the peripheral side of the electronic component bonding region of the circuit forming body is Second to regulate flow, 3,5. A method for mounting an electronic component according to any one of aspects 5 is provided.
[0012]
  According to the seventh aspect of the present invention, before the joining step, the joining material flow regulating member3rd joining material flow regulation member different fromThe organic film as a second step further includes a flow restricting member arrangement step in which the organic film is arranged on the outside of the electronic component bonding region of the circuit forming body and on the periphery of the electronic component bonding region., 3,5. A method for mounting an electronic component according to any one of aspects 5 is provided.
[0013]
  According to the eighth aspect of the present invention, in the main press-bonding step, the circuit-formed body is formed.uponThe bonding material flow restricting member when the plurality of electrodes are arranged in the center of the quadrangular electronic component bonding region.4th joining material flow regulation member different fromAs a peripheral portion side of the electronic component bonding region of the circuit forming body by a solder resist film disposed from the outside of the electronic component bonding region of the circuit forming body to the vicinity of the plurality of electrodes in the central row To regulate the flow of the bonding material to the second, 3, 5The mounting method of the electronic component as described in any one aspect of -7 is provided.
[0014]
  According to the ninth aspect of the present invention, the circuit formed body isFourThe bonding material flow restricting member when the plurality of electrodes in a row are arranged in the center of the rectangular electronic component bonding region.5th joining material flow regulation member different fromThe solder resist film is further provided with a flow regulating member arrangement step in which the solder resist film is arranged from the outside of the electronic component bonding region of the circuit forming body to the vicinity of the plurality of electrodes in the central row., 3, 5The mounting method of the electronic component as described in any one aspect of -7 is provided.
[0015]
  According to the tenth aspect of the present invention, in the main crimping step, the circuit formed body is formed.uponWhen the plurality of bumps are formed in rows on the two opposing sides of the rectangular bonding region, the bonding material flow restriction member6th joining material flow regulation member different fromThe circuit is formed by an organic film disposed outside the electronic component bonding region of the circuit forming body and on the entire surface of the electronic component bonding region, excluding a bonding portion of the electrode necessary for bonding with the electrode of the electronic component. A second for restricting the flow of the bonding material toward the periphery of the electronic component bonding region of the formed body, 3, 5The mounting method of the electronic component as described in any one aspect of -9 is provided.
[0016]
  According to an eleventh aspect of the present invention, the circuit formed body isFourIn the case where the plurality of bumps are respectively formed in rows on two opposite sides of the rectangular bonding region, the bonding material flow regulating member7th joining material flow regulation member different fromThe organic film as a fluid is disposed on the outside of the electronic component bonding region of the circuit forming body and on the entire surface of the electronic component bonding region, excluding the bonding portion of the electrode necessary for bonding with the electrode of the electronic component. A second step further comprising a restricting member arrangement step;, 3, 5The mounting method of the electronic component as described in any one aspect of -9 is provided.
[0017]
  According to the twelfth aspect of the present invention, in the main crimping step, the joining material flow regulating member8th joining material flow regulation member different fromThe flow of the bonding material to the peripheral side of the electronic component bonding region of the circuit forming body is regulated by the fillet forming convex portion arranged at the outer peripheral portion of the electronic component bonding region of the circuit forming body. And forming a fillet covering the side surface of the electronic component., 3, 5The mounting method of the electronic component as described in any one aspect of -11 is provided.
[0018]
  According to the thirteenth aspect of the present invention, the bonding material flow regulating memberProvided as a ninth joining material flow restricting member different from, A fillet-forming convex portion for forming a fillet that is disposed on the outer periphery of the electronic component joining region of the circuit forming body and covers the side surface of the electronic componentTo restrict the flow of the bonding material to the peripheral portion side of the electronic component bonding region of the circuit forming body and form the fillet covering the side surface of the electronic componentSecond, 3, 5The mounting method of the electronic component as described in any one aspect of -11 is provided.
[0019]
According to a fourteenth aspect of the present invention, there is provided the electronic component mounting method according to the twelfth or thirteenth aspect, wherein the fillet forming convex portion is composed of one or more layers of films.
[0020]
According to a fifteenth aspect of the present invention, there is provided the electronic component mounting method according to the twelfth or thirteenth aspect, wherein the fillet forming convex portion is formed of one or more layers of a substrate solder resist film.
[0021]
According to a sixteenth aspect of the present invention, in the twelfth or thirteenth aspect, the fillet forming convex portion is configured by a dummy electrode having the same configuration as the electrode of the circuit forming body and being thicker than the electrode. An electronic component mounting method is provided.
[0022]
  According to the seventeenth aspect of the present invention, in the main crimping step, the joining material flow regulating member10th joining material flow regulation member different fromIn the region where the bonding material exhibits a non-uniform flow in the electronic component bonding region of the circuit formed body, the periphery of the electronic component bonding region of the circuit formed body is formed by a convex portion having substantially the same thickness as the electrode. 2nd which regulates flow of the above-mentioned joining material to the section side, 3, 5The mounting method of the electronic component as described in any one aspect of -16 is provided.
[0023]
  According to an eighteenth aspect of the present invention, the region where the bonding material exhibits non-uniform flow in the electronic component bonding region of the circuit forming body is provided with a convex portion having substantially the same thickness as the electrode. Second, 3, 5The mounting method of the electronic component as described in any one aspect of -16 is provided.
[0024]
  According to a nineteenth aspect of the present invention,Supplying a bonding material containing at least a resin to a circuit forming body or an electronic component;
Forming the electronic component and the circuit through the bonding material so that the plurality of bumps on the plurality of electrodes on the bonding surface of the electronic component and the electrode in the electronic component bonding region of the circuit forming body can be in electrical contact with each other. A positioning step for positioning the body;
The electronic component is thermocompression-bonded by heating and pressurization, and the bumps on the electrodes of the electronic component and the electrodes of the circuit forming body are in electrical contact with the joint surface of the electronic component and the electronic component. A main pressure bonding step of curing the bonding material between the circuit formed body and
In the main press-bonding step, the bonding material flow restricting member has an approximately same thickness as the electrode in a region where the bonding material exhibits non-uniform flow in the electronic component bonding region of the circuit forming body, andMesh-like dummy electrode not involved in electrical wiring in the electronic component joining region of the circuit formed bodyTo restrict the flow of the bonding material to the peripheral side of the electronic component bonding region of the circuit formed bodyAn electronic component mounting method is provided.
[0025]
  According to a twentieth aspect of the present invention,Supplying a bonding material containing at least a resin to a circuit forming body or an electronic component;
Forming the electronic component and the circuit through the bonding material so that the plurality of bumps on the plurality of electrodes on the bonding surface of the electronic component and the electrode in the electronic component bonding region of the circuit forming body can be in electrical contact with each other. A positioning step for positioning the body;
The electronic component is thermocompression-bonded by heating and pressurization, and the bumps on the electrodes of the electronic component and the electrodes of the circuit forming body are in electrical contact with the joint surface of the electronic component and the electronic component. A main pressure bonding step of curing the bonding material between the circuit formed body and
In the main press-bonding step, the bonding material flow restricting member has an approximately same thickness as the electrode in a region where the bonding material exhibits non-uniform flow in the electronic component bonding region of the circuit forming body, andA dummy electrode having a through-hole through which the bonding material can penetrate without being involved in the electrical wiring of the electronic component bonding region of the circuit formed bodyTo restrict the flow of the bonding material to the peripheral side of the electronic component bonding region of the circuit formed bodyAn electronic component mounting method is provided.
[0026]
According to a twenty-first aspect of the present invention, there is provided an electronic component mounting body manufactured by the electronic component mounting method according to any one of the first to twentieth aspects.
[0027]
  According to the twenty-second aspect of the present invention, the plurality of bumps of the plurality of electrodes on the bonding surface of the electronic component are formed on the circuit formed body.SquareAn electronic component mounting body configured by bonding the electronic component to the circuit forming body via a bonding material containing at least a resin in a state of being in electrical contact with the electrode of the electronic component bonding region,
  A bonding material flow restricting member for restricting the flow of the bonding material toward the periphery of the electronic component bonding region of the circuit formed body;,The portion where the bonding material flows out non-uniformly in the electronic component bonding region of the circuit formed bodyAnd the gap between the adjacent electrodes arranged in a row of the square electronic component bonding region of the circuit formed body is provided in a wide interval portion larger than the interval between the other adjacent electrodes. Convex portions that are arranged at equal intervals and that have substantially the same shape as the electrode and do not require electrical bonding.An electronic component mounting body is provided.
[0028]
  According to a twenty-third aspect of the present invention, the bonding material flow restricting member is formed on the circuit forming body.FourThe corner portion of the electronic component bonding region of the circuit forming body corresponding to the corner portion without the bump when the plurality of bumps are formed on each of two opposing sides of the rectangular electronic component bonding region. A convex portion that does not require electrical bonding and restricts the flow of the bonding material to the peripheral portion side of the electronic component bonding region of the circuit forming body at the corner portion.furtherAn electronic component mounting body according to a twenty-second aspect is provided.
[0029]
  According to a twenty-fourth aspect of the present invention,The bonding material is distributed and held substantially uniformly in the entire electronic component bonding region, and a fillet is formed to cover the side surface of the electronic component.An electronic component mounting body according to a twenty-second aspect is provided.
[0030]
  According to the twenty-fifth aspect of the present invention, the convexity which is the bonding material flow regulating member.Part isDummy bumps that do not require electrical connection on the electronic component sideIsSecondThreeAn electronic component mounting body according to an aspect is provided.
[0031]
  According to the twenty-sixth aspect of the present invention, the bonding material flow restriction memberEleventh joining material flow regulation member different fromAn organic film that regulates the flow of the bonding material to the periphery of the electronic component bonding region of the circuit forming body on the outside of the electronic component bonding region of the circuit forming body and the peripheral portion of the electronic component bonding region. An electronic component mounting body according to any one of the 22nd to 25th aspects is provided.
[0032]
  According to the twenty-seventh aspect of the present invention, when the electronic component bonding region of the circuit formed body is a square and the plurality of electrodes in a row are arranged in the center of the rectangular electronic component bonding region. The joining material flow regulating member12th joining material flow regulation member different fromAs described above, the bonding material from the outside of the electronic component bonding region of the circuit forming body to the vicinity of the plurality of electrodes in the central row of the bonding material to the peripheral side of the electronic component bonding region of the circuit forming body An electronic component mounting body according to any one of the twenty-second to twenty-sixth aspects, comprising a solder resist film for regulating flow.
[0033]
  According to a twenty-eighth aspect of the present invention, the circuit forming body isuponWhen the plurality of bumps are formed in rows on the two opposing sides of the rectangular bonding region, the bonding material flow restriction member13th joining material flow regulation member different fromThe electronic component of the circuit-forming body is formed outside the electronic-component joining region of the circuit-forming body and on the entire surface of the electronic-component joining region, excluding a joint portion of the electrode necessary for joining with the electrode of the electronic component. The electronic component mounting body according to any one of the twenty-second to twenty-seventh aspects is provided, which includes an organic film that regulates the flow of the bonding material toward the periphery of the bonding region.
[0034]
  According to the 29th aspect of the present invention, the joining material flow regulating member14th joining material flow regulation member different fromAs described above, the flow of the bonding material to the periphery of the electronic component bonding region of the circuit forming body is restricted to the peripheral portion outside the electronic component bonding region of the circuit forming body to cover the side surface of the electronic component The electronic component mounting body according to any one of the twenty-second to twenty-eighth aspects including a fillet-forming convex portion for forming a fillet is provided.
[0035]
According to a 30th aspect of the present invention, there is provided the electronic component mounting body according to the 29th aspect, wherein the fillet forming convex portion is constituted by one or more layers of films.
[0036]
According to a thirty-first aspect of the present invention, there is provided the electronic component mounting body according to the twenty-ninth aspect, wherein the fillet forming convex portion is composed of one or more layers of a substrate solder resist film.
[0037]
According to a thirty-second aspect of the present invention, in the electronic component according to the twenty-ninth aspect, the fillet forming convex portion is configured by a dummy electrode having the same configuration as the electrode of the circuit forming body and being thicker than the electrode. Provide an implementation.
[0038]
  According to the thirty-third aspect of the present invention, the bonding material flow regulating member15th joining material flow regulation member different fromAs a region where the bonding material exhibits a non-uniform flow in the electronic component bonding region of the circuit formed body, and approximately the same thickness as the electrode and toward the periphery of the electronic component bonding region of the circuit formed body. The electronic component mounting body according to any one of the twenty-second to thirty-second aspects, comprising a convex portion for regulating the flow of the bonding material.
[0039]
  According to a thirty-fourth aspect of the present invention,In a state where a plurality of bumps of a plurality of electrodes on a bonding surface of an electronic component are in electrical contact with an electrode in an electronic component bonding region of the circuit forming body, the electronic component is connected to the circuit forming body through a bonding material containing at least a resin. An electronic component mounting body configured by bonding to
The bonding material flow restricting member for restricting the flow of the bonding material to the peripheral part side of the electronic component bonding region of the circuit forming body is flown unevenly in the electronic component bonding region of the circuit forming body. In preparation for
The bonding material flow restricting member is formed in a region where the bonding material exhibits a non-uniform flow in the electronic component bonding region of the circuit formed body, and is substantially the same thickness as the electrode and the electronic component of the circuit formed body. Restricting the flow of the bonding material to the periphery of the bonding region andA mesh-like dummy electrode that is not involved in electrical wiring in the electronic component joining region of the circuit formed body.RudenA child component mounting body is provided.
[0040]
  According to a thirty-fifth aspect of the present invention,In a state where the plurality of bumps (2) of the plurality of electrodes (4) on the bonding surface of the electronic component (1) are in electrical contact with the electrodes (7) in the electronic component bonding region of the circuit formed body (6), at least resin An electronic component mounting body configured by bonding the electronic component to the circuit forming body via a bonding material (5) including:
A bonding material flow restricting member (303, 313, 319, 329, 339, 355, 369, 360) for restricting the flow of the bonding material to the peripheral part side of the electronic component bonding region of the circuit forming body is connected to the circuit. In the part where the bonding material flows out unevenly in the electronic component bonding region of the formed body,
The bonding material flow restricting member is formed in a region where the bonding material exhibits a non-uniform flow in the electronic component bonding region of the circuit formed body, and is substantially the same thickness as the electrode and the electronic component of the circuit formed body. Restricting the flow of the bonding material to the periphery of the bonding region andA dummy electrode having a through-hole through which the bonding material can penetrate without being involved in the electrical wiring of the electronic component bonding region of the circuit formed bodyRudenA child component mounting body is provided.
[0041]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments according to the present invention will be described below in detail with reference to the drawings. In each plan view, each bump and dummy bump are shown as squares for simplification, but the actual shape is not limited to this.
[0042]
In this specification, the circuit forming body means a circuit board such as a resin board, a paper-phenol board, a ceramic board, a film board, a glass / epoxy (glass epoxy) board, a film board, a single layer board or a multilayer board. An object on which a circuit is formed, such as a substrate, a component, a housing, or a frame.
[0043]
(First embodiment)
FIG. 1 shows an IC chip mounting method and an IC chip mounting body manufactured by the method as an example of an electronic component mounting method and an electronic component mounting body manufactured by the method according to the first embodiment of the present invention. This will be described with reference to FIG. FIGS. 1A and 1B are a side view and a plan view of a circuit board before the joining process of the IC chip mounting method according to the first embodiment, and FIGS. 2A and 2B are a crimping process. FIG. 3 is a partial cross-sectional side view of the IC chip, the circuit board, and the bonding material, and a plan view showing the movement of the bonding material on the circuit board through the IC chip, and FIG. 3 shows the IC chip and the circuit board in the crimping process. FIG. 3 is a partially sectional side view of the bonding material partially enlarged. FIGS. 4A and 4B are a side view and a plan view of the circuit board before the bonding step of the IC chip mounting method according to the conventional example for explaining the first embodiment. FIGS. 2A and 2B are partial cross-sectional side views of the IC chip, the circuit board, and the bonding material in the crimping process of the conventional example of FIG. 2, and a plan view showing the movement of the bonding material on the circuit board through the IC chip. FIG. 6 is a partially enlarged sectional side view of the IC chip, the circuit board, and the bonding material in the crimping process of the conventional example of FIG.
[0044]
In the first embodiment, as shown in FIGS. 1A and 1B, an electronic component bonded to a square IC chip bonding region 6 a-1 of a circuit board 6-1 as an example of a circuit forming body. If the square IC chip 1-1 as an example has a row of bumps 22,..., 22 in the vicinity of the four sides except for the corners at the four corners, the IC of the circuit board 6-1 A dummy electrode 303 as a convex portion, which is an example of a bonding material flow restricting member, is provided in the vicinity of each corner of the four corners of the chip bonding region 6a-1, that is, in a portion corresponding to a portion of the IC chip 1-1 that originally has no bump. Then, the flow of the bonding material 5 is regulated by the dummy electrode 303.
[0045]
In the present specification, the IC chip bonding area means an area on the circuit board to which the IC chip is bonded and has the same shape as the IC chip or slightly larger than the IC chip.
[0046]
Conventionally, as shown in FIGS. 4A and 4B, electrodes 707,..., 707 on the electrodes 707,..., 707 in the vicinity of each side of the square IC chip bonding region 706a of the circuit board 706, respectively. , 707 are arranged in a line at approximately equal intervals, and there are no electrodes 707 near the four corners of the IC chip bonding region 706a of the circuit board 706. After supplying the bonding material 705 to the circuit board 706 with the electrodes 707,..., 707 arranged on the IC chip 701, bumps 702 are formed on the electrodes 707 in the bonding region 706 a of the circuit board 706. The bump 702 on the electrode 704 of the IC chip 701 and the electrode 707 of the circuit board 706 are electrically connected via the bonding material 705 between the bonding surface of the IC chip 701 and the circuit board 706. The circuit board 706 is placed on the base 710, and the heated pressure member 708 is brought into contact with the IC chip 701 to press the IC chip in a heated and pressurized state. The bonding material 705 between the bonding surface of the IC chip 701 and the bonding region 706a of the circuit board 706 is cured by pressure bonding 701. To. In such a case, when the main pressure bonding is performed while heating with a heater, the bonding material 705 between the IC chip 701 and the substrate 706 is bonded to the bonding surface of the IC chip 701 within the central portion of the IC chip bonding region 706a of the substrate 706. The flow rate of the bonding material 705 between the SiN passivation film 509 and the IC chip bonding region 706a of the substrate 706 is SP1. On the other hand, assuming that the flow rate of the bonding material 705 between the Au plating on the electrode surface of the IC chip bonding region 706a of the substrate 706 and the IC chip 701 at the periphery of the IC chip bonding region 706a of the substrate 706 is SP2, The flow velocity SP2 in the peripheral portion of the chip bonding region 706a is larger than the flow velocity SP1 in the central portion of the IC chip bonding region 706a, and the peripheral portion of the IC chip bonding region 706a of the substrate 706, in particular, arranged at approximately equal intervals. .., 707 disposed on the outside of the IC chip bonding region 706a at a position where the electrode 707 is missing, that is, the bonding material 705 flows from the corner portion 703 at a larger flow rate than the vicinity of the side portion where the electrodes 707,. And the density of the bonding material 705 decreases due to flow along the substrate, and the side surface of the IC chip 701 is sealed. The amount of resin to be used is insufficient, the fillet for sealing the side surface of the IC chip 701 is reduced, peeling occurs between the IC chip 701 and the bonding material 705 at the periphery of the IC chip bonding region, Separation occurs between the electrode 707 and the bonding material 705.
[0047]
In order to prevent the occurrence of such peeling, in the first embodiment, before the bonding material supplying step, as shown in FIGS. 1A and 1B, the electrodes 7 of the square IC chip 1-1 are used. One or a plurality of dummy electrodes 303 are arranged in the vicinity of each corner where there is no gap. Here, the arrangement of one or a plurality of dummy electrodes 303 in the vicinity of the corner portion means that one row of electrodes 7,..., 7 in the vicinity of the side portion of the joint surface of the IC chip 1-1 as shown in FIG. When the extension lines L1 and L2 of the arrangement row intersect at the corner portion of the joint surface of the IC chip 1-1 at approximately 90 degrees, they are arranged as 303A and 303B in the outer region R1 of the intersection region, or This means that they are arranged like 303A, 303B, and 303C in a region R2 surrounded by reference lines L3 and L4 that pass through the electrodes 7 closest to the corners of each row and are orthogonal to the extension lines L1 and L2, respectively. As a result, the electrodes 303 exist also in the vicinity of each corner portion of the square IC chip bonding region 6a-1 of the circuit board 6-1, and the electrodes 7, .., 7 or dummy electrodes 303,..., 303 are arranged.
[0048]
Each dummy electrode 303 is preferably formed in the same manner as each electrode 7, but may be formed by other methods.
[0049]
In this way, the bonding material is formed in a state where the rows of the electrodes 7,..., 7 or the dummy electrodes 303,..., 303 are formed in the vicinity of each side of the square IC chip bonding region 6a-1 of the circuit board 6-1. In the supplying step, the bonding material 5 including at least an insulating thermosetting resin is supplied to at least one of the bonding region of the IC chip 1-1 and the IC chip bonding region 6a-1 of the circuit board 6-1. As a method for supplying the bonding material 5, the bonding material 5 is applied by applying it when it is liquid, and when the bonding material 5 is a solid such as a sheet, it is mounted or pasted.
[0050]
Examples of the bonding material include an anisotropic conductive paste or a sealing resin paste in the case of a liquid, and a sheet-like anisotropic conductive film or a sealing resin film in the case of a solid.
[0051]
Next, in the bonding step, the bonding surface of the IC chip 1-1 is superimposed on the IC chip bonding region 6a-1 of the circuit board 6-1 with the bonding material 5 interposed therebetween, and the bumps 2 are formed on the respective electrodes 4. Each electrode 4 of the IC chip 1-1 is interposed between the bonding surface of the formed IC chip 1-1 and the IC chip bonding region 6a-1 of the circuit board 6-1 via the bonding material 5. After positioning so that the said bump 2 and each electrode 7 of the said circuit board 6-1 may contact electrically, it joins. This bonding step may be performed in a state where the circuit board 6-1 is placed on the base 10, or the IC chip 1-1 may be connected to the circuit board 6 through the bonding material 5 at another location. 1, the circuit board 6-1 on which the IC chip 1-1 is overlapped via the bonding material 5 is placed on the base 10 in the main pressure bonding process. May be.
[0052]
Next, in the main press-bonding step, the pressing member 8 is brought into contact with the IC chip 1-1, and the base on which the circuit board 6-1 on which the IC chip 1-1 is superimposed via the bonding material 5 is placed. A pressing force is applied from the pressing member 8 toward 10, and the heat of the heater built in the pressing member 8 is transmitted from the pressing member 8 to the IC chip 1-1. As a result, by applying a predetermined pressure while applying a predetermined temperature, the bonding surface of the IC chip 1-1 is pressed against the IC chip bonding region 6a-1 of the circuit board 6-1, thereby the IC chip 1-1. The bumps 2 on the respective electrodes 4 on the bonding surfaces of the first and second electrodes are in contact with the respective electrodes 7 in the IC chip bonding region 6a-1 of the circuit board 6-1. At this time, the bonding material 5 between the bonding surface of the IC chip 1-1 and the IC chip bonding region 6a-1 of the circuit board 6-1 is moved to the center of the bonding surface of the IC chip 1-1. Try to push from the part toward the periphery. Here, as described above, as a result of the dummy electrode 303 being arranged in the position where the electrode 7 is missing, that is, in the vicinity of the corner portion, any side in the vicinity of each corner portion of the bonding surface of the IC chip 1-1. The electrodes 7,..., 7 and the dummy electrodes 303 are arranged at approximately equal intervals in the same manner as in the vicinity of the sides of the side, and as indicated by arrows in FIG. Similarly, the flow of the bonding material 5 from the central portion toward the peripheral portion is restricted, and the flow rate SP1 at the central portion of the IC chip bonding region 6a-1 of the substrate 6-1 and the IC of the substrate 6-1 are controlled. The flow velocity SP2 in the peripheral part of the chip bonding region 6a-1 is substantially the same so that the IC chip 1-1 and the bonding material 5 in the central part and the peripheral part of the IC chip bonding region 6a-1 In addition to increasing adhesion, By increasing the adhesion between the electrode 7 or dummy electrode 313 of 6-1 and the bonding material 5, it is possible to prevent the peeling, and at least the entire IC chip bonding region 6a-1 of the circuit board 6-1. The bonding material 5 is distributed and held substantially uniformly and cured by the heat, whereby an IC chip mounting body can be manufactured. That is, in the main press-bonding step, the dummy electrodes 303,..., 303 provided on the IC chip 1-1 are moved from the central part of the IC chip bonding region 6a-1 of the circuit board 6-1 to the peripheral part, particularly the corner part. It is possible to regulate the non-uniform extrusion of the bonding material 5 at the time of pressure bonding.
[0053]
The height of each dummy electrode 303 as an example of the bonding material flow regulating member is preferably substantially the same as the height of the electrode 7. In addition, the electrode height of the substrate is usually 12 to 25 μm (including Au / Ni plating) as an example in a multilayer substrate, for example, an ALIVH glass epoxy substrate manufactured by Matsushita Electronic Components Co., Ltd. As an example, it is 2 to 15 μm (including Au / Ni plating). Each dummy electrode 303 preferably has heat resistance. Here, as an example of heat resistance, for example, when a reflow process is not required, it means that it can withstand heat at 200 ° C. for 20 seconds, and when passing through the reflow process, it has a property to withstand heat at 250 ° C. for about 10 seconds. To do.
[0054]
In addition, the bonding material 5 is not limited to the one composed only of the insulating thermosetting resin, and may include a conductive material including conductive particles in the insulating resin, or include an inorganic filler. Good. Thus, even when a conductive material or an inorganic filler is included in the bonding material 5, the flow of the resin is made uniform in the bonding surface of the IC chip 1-1 at the time of pressure bonding by the bonding material flow regulating member, and the conductive material The active material or the inorganic filler can be arranged uniformly. On the other hand, in the case where the bonding material flow regulating member is not provided, in the resin to which the inorganic filler is added, if the flow of the resin at the time of pressure bonding becomes uneven, the inorganic filler becomes coarse and partially has resin physical properties. In some cases, the quality may be easily deteriorated due to the difference in the quality of the resin, and in the case of resin to which conductive material is added, if the flow of the resin at the time of crimping becomes uneven, the conductive material becomes coarse and partially shorts. There is.
[0055]
In the above description, the bumps 2 of the IC chip 1-1 and the electrodes 7 of the circuit board 6-1 are in contact with each other in the joining process. However, the present invention is not limited to this. The bumps 2 of the IC chip 1-1 and the electrodes 7 of the circuit board 6-1 are not in contact with each other. May be in contact with each other.
[0056]
According to the first embodiment, in the square IC chip bonding region 6a-1 of the circuit board 6-1, a row of the electrodes 7 at approximately equal intervals in the vicinity of the sides of the four sides excluding the corners of the four corners. ,..., 7, and dummy electrodes 303,..., 303 are formed at the corners of the circuit board 6-1 in the vicinity of the side of the IC chip bonding region 6 a-1 without the electrodes 7. As a result, the arrangement state of the electrodes 7,..., 7 can be made substantially the same in the vicinity of the sides and the corners of each side of the IC chip 1-1, and the IC chip 1- When the bonding material 5 flows from the central portion of the bonding material 5 to the corner portion of the peripheral portion between the bonding region 1 and the IC chip bonding region 6a-1 of the circuit board 6-1, the dummy electrode 303 is bonded. Functions as a material flow restricting member, substrate Flow rate SP1 at the central portion of the IC chip bonding region 6a-1 and the flow rate SP2 at the peripheral portion of the IC chip bonding region 6a-1 of the substrate 6-1 are substantially the same. The flow from the central portion of the bonding material 5 to the peripheral corner portions of the bonding material 5 in the vicinity of the side portions and in the vicinity of the corner portions of the region 6a-1 is substantially uniform, and the bonding of the IC chip 1-1 is performed. In other words, the distribution of the bonding material 5 in the IC chip bonding region 6a-1 of the circuit board 6-1 can be made uniform. As described above, the distribution of the bonding material 5 in the bonding surface of the IC chip 1-1 and the IC chip bonding region 6a-1 of the circuit board 6-1 can be made uniform. In addition to increasing the adhesion between the IC chip 1-1 and the bonding material 5 at the central portion and the peripheral portion of the IC chip bonding region 6a-1, particularly the corner portion, and the substrate 6-1. By increasing the adhesion between the electrode 7 or the dummy electrode 303 and the bonding material 5, the peeling can be prevented and the reliability of bonding and sealing can be improved.
[0057]
If the arrangement interval between the dummy electrode 303 arranged at the corner portion and the electrodes 7 and 7 adjacent to the dummy electrode 303 is substantially the same as the arrangement interval between the electrodes 7,. Similarly, the electrodes 7,..., 7 are formed from the vicinity to the corner portion, and the flow of the bonding material 5 from the central portion to the peripheral portion can be substantially more uniform, and The distribution of the bonding material 5 in the IC chip bonding region 6a-1 of the circuit board 6-1 can be made more uniform. However, the present invention is not limited to this, and the arrangement of the dummy electrode 303 and the electrodes 7 and 7 adjacent to the dummy electrode 303 is provided in order to improve uniformity as compared with the case where the dummy electrodes 303,. The interval may be larger than the arrangement interval of the electrodes 7.
[0058]
(Second Embodiment)
FIG. 7 shows an IC chip mounting method and an IC chip mounting body manufactured by the method as an example of an electronic component mounting method and an electronic component mounting body manufactured by the method according to the second embodiment of the present invention. This will be described with reference to FIG. FIGS. 7A and 7B are a side view and a back view of the IC chip before the bonding step of the IC chip mounting method according to the second embodiment, and FIG. 8A is a circuit board before the bonding step. FIG. 8B is a plan view showing a flow state of the bonding material in the crimping process and showing the movement of the bonding material on the circuit board through the IC chip. FIG. 9 is a partial cross-sectional side view in which the IC chip, the circuit board, and the bonding material are partially enlarged in the crimping process. FIGS. 10A and 10B are a side view and a back view of the IC chip before the joining step of the electronic component mounting method according to the conventional example for explaining the second embodiment, and FIG. ) Is a side view of the circuit board before the bonding process of the conventional example of FIG. 10, and FIG. 11B shows the flow state of the bonding material in the crimping process of the conventional example of FIG. It is a top view which shows the motion of the joining material on a circuit board. FIG. 12 is a partially enlarged sectional side view of the IC chip, the circuit board, and the bonding material in the above-described crimping process of the conventional example of FIG.
[0059]
As shown in FIG. 7, the mounting method of the IC chip excludes the corners at the four corners of the bonding surface of a square, that is, a square or rectangular IC chip 1-2 (square IC chip 1-2 in FIG. 7). 4 having a row of bumps 2,..., 2 substantially parallel to each side and at substantially equal intervals in the vicinity of the edge of each of the four sides, and the side of the joint surface of the IC chip 1-2. In the vicinity where there is no bump 2 (in FIG. 7B, the upper and lower two sides of the four sides of the IC chip 1-2 and the portion where the bump 2 is not present in the vicinity of the left and right two sides). A dummy bump 3 is formed as an example of a bonding material flow restricting member, and the flow of the bonding material 5 is restricted by the dummy bump 3. On the other hand, on the substrate side, as shown in FIG. 8, the circuit board 6-2 corresponding to the bonding surface of the above-mentioned square, that is, the square or rectangular IC chip 1-2 (square IC chip 1-2 in FIG. 7). In the rectangular or square or rectangular IC chip bonding region 6a-2 (square IC chip bonding region 6a-2 in FIG. 7), each side is adjacent to the edge of each of the four sides excluding the corners of the four corners. , 7 having a row of electrodes 7,..., 7 approximately in parallel with each other at substantially equal intervals, and in the vicinity of the side portion of the IC chip bonding region 6 a-2, where there is no electrode 7 (FIG. 8B). Then, of the four sides of the IC chip bonding area 6a-2, the portion without the electrode 7 (the portion where the dummy bump 3 is formed) in the vicinity of the upper and lower sides of the four sides, and the vicinity of the left and right sides Location without electrode 7 (dummy bump There is formed a dummy electrode 313 serving as the convex portion, which is an example of a bonding material flow regulating member in place)) formed, and performs flow regulation bonding material 5 by the dummy electrodes 313.
[0060]
Conventionally, as shown in FIGS. 10 and 11, the electrodes 704 are respectively provided in the vicinity of the sides of two opposing sides (two upper and lower sides and two left and right sides in FIG. 10B) of a square IC chip 701. , 704, bumps 702,..., 702 are arranged at approximately equal intervals, and the position 703 where the bumps 702 are missing, in other words, the interval between the adjacent bumps 702, 702 is larger than the other intervals. As shown in FIG. 11A, there is no electrode 707 at the position corresponding to the wide interval portion 703 on the substrate 706 side, and the interval between adjacent electrodes 707 and 707 is present. Suppose that there is a wide-spaced portion that is more apart than the other spaces. 11, after supplying the bonding material 705 to the circuit board 706 in a state where the bumps 702,..., 702 are arranged on the IC chip 701 and the electrodes 707,. 12B and FIG. 12, the bonding material 705 is provided between the bonding surface of the IC chip 701 in which the bump 702 is formed on the electrode 704 on the bonding surface and the IC chip bonding region 706a of the circuit board 706. And the bump 702 on the electrode 704 of the IC chip 701 and the electrode 707 of the circuit board 706 are joined so as to be in electrical contact, and the circuit board 706 is placed on the base 710. By pressing the heated pressing member 708 against the IC chip 701 and pressing the IC chip 701 in a heated and pressurized state, the IC chip 701 is pressure-bonded. Curing the bonding material 705 between the IC chip bonding region 706a of the bonding surface and the circuit board 706 of the chip 701. In such a case, the wide spacing portion 703 where the bump 702 is missing and the electrodes 707,..., 707 arranged at approximately equal intervals rather than the gaps between the bumps 702,. The bonding material 705 greatly flows out from the wide gap portion where the electrode 707 is lacking to the outer peripheral portion outside the IC chip bonding region 706a of the circuit board 706 and the bonding surface 705a. The density of the will decrease. As a result, as shown in FIG. 12, the amount of resin for sealing the side surface of the IC chip 701 is insufficient, and the fillet for sealing the side surface of the IC chip 701 is small or not at all, and at the peripheral portion of the IC chip bonding region 706a. In other words, peeling occurs between the IC chip 701 and the bonding material 705, or peeling occurs between the electrode 707 of the substrate 706 and the bonding material 705.
[0061]
In order to prevent such peeling, in the second embodiment, before the bonding material supply step, as shown in FIGS. 7A and 7B, the four sides of the IC chip 1-2 are opposed to each other. In the vicinity of the sides of the two sides (two upper and lower sides and two left and right sides in FIG. 7B), the bumps 2 are missing while the bumps 2,... The wide gap portion (see the upper and lower sides 703 and the left and right sides 703 in FIGS. 10B and 11B), in other words, the gap between the adjacent bumps 2 and 2 is larger than the other gaps. The dummy bumps 3 are formed in the same positions as the other bumps 2 so that the bumps 2 are arranged at approximately equal intervals. As a result, the two opposite sides (the upper and lower sides in FIG. 7B) of the IC chip 1-2 are bumps 2,..., Without the bumps 2 missing in the vicinity of the sides of the two sides. The state is similar to the state in which 2 are arranged at approximately equal intervals.
[0062]
On the other hand, on the substrate side, before the bonding material supplying step, as shown in FIGS. 8A and 8B, each of the four sides of the IC chip bonding region 6a-2 of the circuit board 6-2 is mutually connected. In the vicinity of the sides of the two opposing sides (upper and lower sides and two left and right sides in FIG. 8B), the electrodes 7 are missing while the electrodes 7,... The wide gap portion (see the upper and lower sides 703 and the left and right sides 703 in FIGS. 10B and 11B), in other words, the gap between the adjacent electrodes 7 and 7 is larger than the other gaps. A dummy electrode 313 is formed at a distant position, for example, in the same manner as the other electrodes 7 so that the electrodes 7 are arranged at approximately equal intervals. As a result, the two opposite sides of the IC chip bonding region 6a-2 of the circuit board 6-2 (the two upper and lower sides and the two left and right sides in FIG. 8B) are in the vicinity of the sides of the respective sides. In this case, the electrode 7 is not lost, and the state is the same as the state in which the electrodes 7,...
[0063]
Note that a method for forming each bump 2 and each dummy bump 3 includes a bump forming method shown in FIG. An example in which each bump 2 and each dummy bump 3 are formed on the IC chip 1-2 shown in FIGS. 7A and 7B will be described. In the IC chip 401 corresponding to the IC chip 1-2, bumps (protruding electrodes) are applied to the Al pad electrode 404 (corresponding to the electrode 4) of the IC chip 401 by the operation shown in FIGS. 47A to 47F by a wire bonding apparatus. ) 402 (corresponding to each bump 2 and each dummy bump 3) is formed. That is, a ball 196 is formed at the lower end of the wire 195 protruding from the holder 193 in FIG. 47A, the holder 193 holding the wire 195 is lowered in FIG. 47B, and the ball 193 is moved to the electrode 404 of the IC chip 401. To form the shape of the bump 402, and in FIG. 47C, the holder 193 starts to rise while feeding the wire 195 downward, and the holder 193 is attached to the substantially rectangular loop 199 as shown in FIG. The curved portion 198 is formed on the upper portion of the bump 402 as shown in FIG. 47E by moving 193, and the bump 402 as shown in FIG. 47F is formed by tearing. Alternatively, the wire 195 is clamped by the holder 193 in FIG. 47B, the holder 193 is lifted and pulled upward to tear the gold wire 195, and the shape of the bump 402 as shown in FIG. You may make it form. FIG. 47B shows a state where the bump 402 is formed on each electrode 404 of the IC chip 401 in this way.
[0064]
In the state where the bumps 2,..., 2 and the electrodes 7,..., 7 are formed in this way, in the bonding material supply step, the bonding surface of the IC chip 1-2 or the IC chip bonding region 6a of the circuit board 6-2. The bonding material 5 containing at least an insulating thermosetting resin is supplied to at least one of -2. As a method for supplying the bonding material 5, the bonding material 5 is applied by applying it when it is liquid, and when the bonding material 5 is a solid such as a sheet, it is mounted or pasted.
[0065]
Examples of the bonding material include an anisotropic conductive paste or a sealing resin paste in the case of a liquid, and a sheet-like anisotropic conductive film or a sealing resin film in the case of a solid.
[0066]
Next, in the bonding step, the bonding surface of the IC chip 1-2 is superimposed on the IC chip bonding region 6a-2 of the circuit board 6-2 with the bonding material 5 interposed therebetween, and the bumps 2 are formed on the respective electrodes 4. Each electrode 4 of the IC chip 1-2 is interposed between the bonding surface of the formed IC chip 1-2 and the IC chip bonding region 6a-2 of the circuit board 6-2 via the bonding material 5. After positioning so that the said bump 2 and each electrode 7 of the said circuit board 6-2 may contact electrically, it joins. This bonding step may be performed in a state where the circuit board 6-2 is placed on the base 10, or the IC chip 1-2 is connected to the circuit board 6-6 via the bonding material 5 at another location. 2, the circuit board 6-2 on which the IC chip 1-2 is overlapped via the bonding material 5 is placed on the base 10 in the main crimping process. May be.
[0067]
Next, in the main pressing step, the pressing member 8 is brought into contact with the IC chip 1-2, and the base on which the circuit board 6-2 on which the IC chip 1-2 is superimposed with the bonding material 5 placed thereon is placed. A pressing force is applied from the pressing member 8 toward 10 and the heat of the heater built in the pressing member 8 is transmitted from the pressing member 8 to the IC chip 1-2. As a result, by applying a predetermined pressure while applying a predetermined temperature, the bonding surface of the IC chip 1-2 is pressed against the IC chip bonding region 6a-2 of the circuit board 6-2, thereby the IC chip 1-2. The bumps 2 on the respective electrodes 4 on the bonding surfaces of the first and second electrodes are further in contact with the respective electrodes 7 in the IC chip bonding region 6a-2 of the circuit board 6-2 than in the bonding step. At this time, the bonding material 5 between the bonding surface of the IC chip 1-2 and the IC chip bonding region 6a-2 of the circuit board 6-2 is moved to the center of the bonding surface of the IC chip 1-2. Try to push from the part toward the periphery. Here, as described above, as a result of the dummy bumps 3 and the dummy electrodes 313 being disposed in the wide gap portions where the electrodes 7 are lacking in the wide gap portions where the bumps 2 are missing, the bonding surface of the IC chip 1-2 is obtained. In other words, in the vicinity of each side of the IC chip bonding region 6a-2 of the substrate 6-2, the bumps 2,..., 2 and the dummy bump 3 and the electrodes 7,. And the dummy electrodes 313 are arranged at approximately equal intervals, and the flow from the central part to the peripheral part of the bonding material 5 is similarly regulated in the vicinity of the side part of each side as shown by the arrows in FIG. 8B. Thus, the bonding material 5 is prevented from flowing non-uniformly, and the bonding material 5 is substantially uniform over at least the bonding surface of the IC chip 1-2 and the entire IC chip bonding region 6a-2 of the circuit board 6-2. Distribution retention It is possible to manufacture an IC chip mounting body is cured by the heat Te. That is, in the main press-bonding step, the bonding surface of the IC chip 1-2, that is, the substrate 6-by the dummy bump 3 provided on the IC chip 1-2 and the dummy electrode 313 provided on the circuit substrate 6-2. The non-uniform extrusion of the bonding material 5 at the time of pressure bonding from the central portion to the peripheral portion of the IC chip bonding region 6a-2 of 2 can be restricted.
[0068]
The height of each dummy bump 3 as an example of the bonding material flow restricting member is the distance between the IC chip 1-2 and the circuit board 6-2 after the bonding of the IC chip 1-2 and the circuit board 6-2. 10% to 30% is preferable, and as an example, 20% is preferable. As a specific numerical example, when the height dimension of the interval between the IC chip 1-2 after bonding and the circuit board 6-2 is 30 μm to 40 μm, the height of the dummy bump 3 is about 7 μm.
[0069]
Each dummy bump 3 is preferably heat resistant. As an example of heat resistance, for example, when a reflow process is unnecessary, it means a property that can withstand heat of 200 ° C. for 20 seconds, and when the reflow process is passed, 250 ° C. for about 10 seconds.
[0070]
Moreover, it is preferable that the height of the dummy electrode 313 of the circuit board 6-2 is substantially the same as the height of the electrode 7.
[0071]
In addition, the bonding material 5 is not limited to the one composed only of the insulating thermosetting resin, and may include a conductive material including conductive particles in the insulating resin, or include an inorganic filler. Good. As described above, even when a conductive material or an inorganic filler is included in the bonding material 5, the resin flow is made uniform in the bonding surface of the IC chip 1-2 by the dummy bump 3 and the dummy electrode 313, so that the conductive material is conductive. The active material or the inorganic filler can be arranged uniformly. On the other hand, in the case where the dummy bump 3 and the dummy electrode 313 are not provided, in the resin to which the inorganic filler is added, the inorganic filler becomes dense when the flow of the resin at the time of pressure bonding becomes uneven, and the resin physical properties are partially obtained. In some cases, the quality may be easily deteriorated due to the difference in the quality of the resin, and in the case of resin to which conductive material is added, if the flow of the resin at the time of crimping becomes uneven, the conductive material becomes coarse and partially shorts. There is.
[0072]
In the above description, the bumps 2 of the IC chip 1-2 and the electrodes 7 of the circuit board 6-2 are in contact with each other in the bonding process. However, the present invention is not limited to this. The bumps 2 of the IC chip 1-2 and the electrodes 7 of the circuit board 6-2 are not in contact with each other. May be in contact with each other.
[0073]
Further, in the second embodiment, the dummy electrode is formed in the wide interval portion where the electrode 7 is missing, in other words, in the wide interval portion where the interval between the adjacent electrodes 7 and 7 is larger than the interval between the other adjacent electrodes 7 and 7. In the case of forming 313, if the distance between the adjacent electrodes 7 and 7 is not necessarily uniform, the dummy electrode 313 is formed only in a portion where the distance between the adjacent electrodes 7 and 7 exceeds an allowable value. What should I do? Specifically, as shown in FIG. 46, the relationship between the maximum pitch Pmax and the minimum pitch Pmin among the pitches 7 and 7 of the circuit board 6-2 or between the electrode 7 and the dummy electrode 313 is: Pmax ≦ (Pmin × 2α) [where α is an arbitrary value from 1 to 6. By arranging the dummy electrode 313 so as to satisfy the above, the same effect as described above can be obtained.
[0074]
According to the second embodiment, on the bonding surface of the quadrangular, that is, square or rectangular IC chip 1-2, a row of bumps 2 approximately at regular intervals in the vicinity of the sides of the four sides excluding the corners of the four corners. ,..., 2, and dummy bumps 3 are formed at locations where no bumps 2 exist in the vicinity of the side of the side of the bonding surface of the IC chip 1-2, and the IC chip bonding of the circuit board 6-2 is performed. By forming a dummy electrode 313 at a location without the electrode 7 in the vicinity of the side of the side of the region 6a-2, the arrangement state of the bumps 2,..., 2 is changed to the vicinity of the side of each side of the IC chip 1-2. And the arrangement state of the electrodes 7,..., 7 can be made substantially the same in the vicinity of the sides of each side of the IC chip bonding region 6a-2 of the circuit board 6-2. IC chip 1- in the crimping process When the bonding material 5 flows from the central portion to the peripheral portion of the bonding material 5 between the bonding surface and the IC chip bonding region 6a-2 of the circuit board 6-2, the dummy bump 3 and the dummy electrode 313 are bonded to each other. From the central part of the bonding material 5 that functions as a flow restricting member and in the vicinity of each side of the IC chip 1-2 and in the vicinity of each side of the IC chip bonding area 6a-2 of the circuit board 6-2. The flow to the peripheral portion can be made substantially uniform, and the distribution of the bonding material 5 can be made uniform in the bonding surface of the IC chip 1-2 and in the IC chip bonding region 6a-2 of the circuit board 6-2. Adhesive strength is improved, and the reliability of bonding and sealing can be improved. Further, as shown in FIG. 9, the bonding material 5 can be uniformly distributed in the bonding surface of the IC chip 1-2 and in the IC chip bonding region 6a-2 of the circuit board 6-2. The amount of resin for sealing the side surface of the IC chip is sufficiently supplied, and the fillet 5A for sealing the side surface of the IC chip 1-2 can be enlarged. Separation between the IC chip 1-2 and the bonding material 5 at the periphery of the bonding region 6a-2 and separation between the electrode 7 of the substrate 6-2 and the bonding material 5 can be effectively prevented. . As described above, when a sufficient amount of resin for sealing the side surface of the IC chip is supplied, the reason why the fillet 5A for sealing the side surface of the IC chip 1-2 can be increased is that the distance between the IC chip and the substrate is large. Since it is determined by the bump material and shape, if the amount of bonding resin is sufficiently supplied and increased, the amount of resin that protrudes to the outside of the IC chip at the time of pressure bonding increases, and the fillet can be increased.
[0075]
As for the dummy bump as an example of the bonding material flow regulating member, the arrangement position on the bonding surface of the IC chip 1-2 is not limited to the vicinity of the pair of opposing sides, but in the vicinity of any one of the sides. In the row of bumps 2,..., 2, dummy bumps 3 are formed in the same manner as the other bumps 2 at positions where the distance between the adjacent bumps 2 and 2 is larger than the other intervals, and the bumps 2 are formed at approximately equal intervals. It may be arranged.
[0076]
In addition, the dummy electrode 313 as an example of the bonding material flow regulating member is not limited to the vicinity of the opposed pair of side portions in the IC chip bonding region 6a-2 of the circuit board 6-2. In the row of the electrodes 7,..., 7 in the vicinity of any one of the side portions, the dummy electrode 313 is disposed in the same manner as the other electrodes 7 at a position where the distance between the adjacent electrodes 7, 7 is larger than the other distances. The electrodes 7 may be formed so as to be arranged at approximately equal intervals.
[0077]
(Third embodiment)
As an example of the electronic component mounting method according to the third embodiment of the present invention and the electronic component mounting body manufactured by the method, the IC chip mounting method and the IC chip mounting body manufactured by the method are shown in FIGS. This will be described with reference to FIG. 13A and 13B are a side view and a plan view of the circuit board before the bonding step of the IC chip mounting method according to the third embodiment, and FIGS. 13C and 14 are the crimping step. FIG. 2 is a partial cross-sectional side view and a partially enlarged partial cross-sectional side view of an IC chip, a circuit board, and a bonding material. FIGS. 15A and 15B are a side view and a plan view of the circuit board before the bonding step of the IC chip mounting method according to the conventional example for explaining the third embodiment. C) and FIG. 16 are a partial sectional side view and a partially enlarged partial sectional side view of the IC chip, the circuit board, and the bonding material in the above-described conventional crimping process.
[0078]
In the first and second embodiments, as an example of the bonding material flow regulating member, the dummy electrode 303 is disposed at a position where the electrode 7 is not disposed. However, the present invention is not limited to this. For example, the bonding surface of the IC chip 1-3 is provided with a passivation film 309 that protects the active surface (wiring surface) of the bonding surface, and as shown in FIG. 13B, the IC of the circuit board 6-3. Some include an organic film 319 in a rectangular region around the outside of the chip bonding region 6a-3. At this time, the organic film 319 is, for example, a solder resist, and not only the outer periphery of the IC chip bonding region 6a-3 of the circuit board 6-3 but also the sides of the IC chip bonding region 6a-3 from the periphery. In the rectangular frame region (in the figure, satin region) 320 on the inner side and in the vicinity of each side, a portion other than the junctions with the bumps 2,... It is formed on the surface of the substrate 6-3. Therefore, the organic film 319 in the rectangular frame region 320 from the outer periphery of the IC chip bonding region 6a-3 to the inner side of each side of the IC chip bonding region 6a-3 and in the vicinity of the side part of each side is bonded material flow regulation. It may function as a bonding material flow restricting film as an example of a member, and the organic material 319 may restrict the flow of the bonding material 5. Here, the same effect can be obtained with an inorganic film instead of the organic film 319. However, in the case of an inorganic film, since the adhesion with the resin is weak, the sealing resin and the inorganic film can be used under an environmental test such as a heat cycle. Peeling may occur between them, and the function as a sealing resin may be reduced. On the other hand, when the organic film 319 is used, the organic film has stronger adhesion to the sealing resin than the inorganic film, and the reliability and quality can be improved.
[0079]
The organic film 319 is made of, for example, polyimide or polybenzoxazole (PBO) that functions as a heat-resistant coating that prevents electrical contact with other wirings or bumps to maintain insulation and protect the conductor. The organic film 319 is made of a solder resist and spin-coated with, for example, a thickness of about 3 to 7 μm. As shown in FIG. 13B, the IC chip bonding region 6a-3 of the circuit board 6-3 is formed. The entire surface is applied to the outer periphery and the rectangular frame region 320 (the satin region in the figure) near each side of each side of the IC chip bonding region 6a-3. Thereafter, of the electrodes 7,..., 7, the joints necessary for joining to the bumps 2,. The regions to be removed may be independent in a strip shape, or may be connected and formed in a frame shape. As a result, the organic film 319 is formed around the outside of the IC chip bonding region 6a-3 and the rectangular frame region (satin region in the figure) 320, and the bumps 2,. 2 can be formed on the surface of the circuit board 6-3 other than the portion excluding the joint portion with the electrode 2 and the electrode. As shown in FIG. 14, the organic film 319 has a function of reducing the distance between the IC chip and the substrate at the outer periphery of the IC chip and increasing the amount of resin at the outer periphery of the IC chip. The organic film 319 can prevent peeling at the interface between the sealing resin and the IC chip and peeling at the interface between the sealing resin and the substrate, and increase the density of the sealing resin to prevent voids. It is possible to prevent moisture from entering in a high humidity environment as much as possible, and to improve the reliability and quality in a high temperature and high humidity environment.
[0080]
Conventionally, as shown in FIG. 15, a passivation film 509 (in a square region having bumps 702,..., 702 on the joint surface of a square IC chip 701 and surrounded by bumps 702,. In the figure, an organic film 519 is arranged in a rectangular frame shape with a predetermined interval around the outside of each side of the IC chip bonding area 706a of the circuit board 706 to which the IC chip 701 is bonded. Assuming that In such a state where the organic film 519 is arranged around the IC chip bonding region 706a of the circuit board 706, the bonding material 705 is supplied to the circuit board 706, and then the bump 702 is formed on the electrode 704 on the bonding surface. The bump 702 on the electrode 704 of the IC chip 701 and the electrode 707 of the circuit board 706 are electrically connected via the bonding material 705 between the bonding surface of the IC chip 701 and the circuit board 706. The circuit board 706 is placed on the base 710, the heated pressing member 708 is brought into contact with the IC chip 701, and the IC chip 701 is pressed and heated, whereby the IC is heated and pressurized. The bonding material 705 between the bonding surface of the IC chip 701 and the circuit board 706 is cured by pressing the chip 701. In such a case, four-side bumps 702,..., 702 rather than a square area surrounded by four-side bumps 702,..., 702 in the joint surface of the IC chip 701 on which the passivation film 509 is disposed. , 702, the outer side of the bumps 702,..., 702, that is, the peripheral portion in the IC chip bonding region 706a, since there is no passivation film 509 on the IC chip side and no organic film 519 on the substrate side. The gap between the IC chip 701 and the substrate 706 is larger than the other part, the flow rate of the bonding material 705 flows in that part, and the density of the bonding material 705 decreases, so that the periphery of the IC chip bonding region 706a is reduced. The adhesion strength, that is, the joining strength and the sealing strength at the portion are reduced, and peeling occurs. In other words, when the gap between the IC chip 701 and the substrate 706 becomes larger than the other portions, the volume between the local IC chip and the substrate also increases, which increases the amount of sealing resin filling the area. Become. Therefore, the amount of resin that protrudes to the outer periphery of the IC chip is reduced at this portion, and as a result, the fillet is reduced. As described above, when peeling occurs between the bonding material 705 and the peripheral portion of the bonding surface of the IC chip 701, moisture enters the peeling portion, and the IC chip 701 and the like due to moisture absorption corrode. .
[0081]
In order to prevent such a decrease in bonding force and sealing force, in the third embodiment, before the bonding material supplying step, as shown in FIGS. 13A and 13B, a circuit board 6-3 is provided. , 2 of the electrodes 7,... 7 in the rectangular area (in the drawing, satin area) inside each side of the square IC chip bonding area 6 a-3 and near the side of each side. An organic film 319 (a satin region in the figure) is disposed as a bonding material flow restricting film as an example of the bonding material flow restricting member on the surface of the circuit board other than the electrode and the portion other than the bonding portion. As a result, there is no passivation film 309 in the square area surrounded by the bumps 2, 2, 2 on the four sides in the joint surface of the IC chip 1-3 on which the passivation film 309 is disposed, and the IC chip side. Instead, the flow velocity of the bonding material 5 flows at the position outside the four sides of the bumps 2,..., 2 where the organic film 319 is disposed on the substrate side, that is, slightly around the IC chip bonding region 6a-3. The density of the bonding material 5 can be prevented from lowering, and the inner peripheral portion of the IC chip bonding region 6a-3, that is, the inner side of each side of the IC chip bonding region 6a-3 It is possible to prevent a decrease in the adhesion force, that is, the bonding force and the sealing force in the vicinity of the side portion. As a result, a sufficient amount of resin for sealing the side surface of the IC chip is supplied, the fillet 5A for sealing the side surface of the IC chip 1-3 can be enlarged, and the peripheral portion of the IC chip bonding region 6a-3 can be increased. The separation between the IC chip 1-3 and the bonding material 5 and the separation between the electrode 7 of the substrate 6-3 and the bonding material 5 can be effectively prevented.
[0082]
With the organic film 319 thus formed, in the bonding material supply step, at least one of the bonding surface of the IC chip 1-3 and the IC chip bonding region 6a-3 of the circuit board 6-3 is at least A bonding material 5 containing an insulating thermosetting resin is supplied. The method for supplying the bonding material 5 is the same as in the first embodiment.
[0083]
Next, in the bonding step, the bonding surface of the IC chip 1-3 is superimposed on the IC chip bonding region 6a-3 of the circuit board 6-3 with the bonding material 5 interposed therebetween, and the bumps 2 are formed on the respective electrodes 4. Each electrode 4 of the IC chip 1-3 is interposed between the bonding surface of the formed IC chip 1-3 and the IC chip bonding region 6a-3 of the circuit board 6-3 via the bonding material 5. After positioning so that the said bump 2 and each electrode 7 of the said circuit board 6-3 may electrically contact, it joins. This bonding step may be performed in a state where the circuit board 6-3 is placed on the base 10, or the IC chip 1-3 is connected to the circuit board 6 through the bonding material 5 at another location. 3, the circuit board 6-3 on which the IC chip 1-3 is overlapped via the bonding material 5 is placed on the base 10 in the final press-bonding process. May be.
[0084]
Next, in the main pressing step, the pressing member 8 is brought into contact with the IC chip 1-3, and the base on which the circuit board 6-3 on which the IC chip 1-3 is superimposed via the bonding material 5 is placed. A pressing force is applied from the pressing member 8 toward 10, and the heat of the heater built in the pressing member 8 is transmitted from the pressing member 8 to the IC chip 1-3. As a result, a predetermined pressure is applied while applying a predetermined temperature, and the bonding surface of the IC chip 1-3 is pressed against the IC chip bonding region 6a-3 of the circuit board 6-3, whereby the IC chip 1-3. The bumps 2 on the respective electrodes 4 on the bonding surfaces of the first and second electrodes are in contact with the respective electrodes 7 in the IC chip bonding region 6a-3 of the circuit board 6-3. At this time, the organic film 319 is disposed on both sides of the IC chip 1-3 in the short direction, that is, in the width direction with respect to the circuit board 6-3, so that the IC chip 1-3 is separated from the center of the IC chip bonding region 6a-3. As shown in FIG. 14, the flow resistance can be increased with respect to the flow of the bonding material 5 to the peripheral portion, and compared with the case where there is no organic film 319 on both sides of the row of bumps 2,. Thus, the flow rate between the IC chip 1-3 and the circuit board 6-3 can be reduced, and the same is performed in the vicinity of the sides of the respective sides in the IC chip bonding region 6a-3 of the circuit board 6-3. Therefore, the flow of the bonding material 5 from the central portion to the peripheral portion is restricted to prevent the bonding material 5 from flowing non-uniformly, and the bonding material 5 is substantially uniform at least over the entire IC chip bonding region 6a-3. The distribution is maintained and hardened by the heat Let is capable of producing an IC chip mounting body. That is, in the main press-bonding step, the organic film 319 can regulate the non-uniform extrusion of the bonding material 5 when the IC chip bonding region 6a-3 is pressed from the central portion to the peripheral portion.
[0085]
In the above description, the bumps 2 of the IC chip 1-3 and the electrodes 7 of the circuit board 6-3 are in contact with each other in the bonding process. However, the present invention is not limited to this. The bumps 2 of the IC chip 1-3 do not come into contact with the electrodes 7 of the circuit board 6-3, and the bumps 2 of the IC chip 1-3 and the electrodes 7 of the circuit board 6-3 are not in contact with each other for the first time in the main pressing process. May be in contact with each other.
[0086]
According to the third embodiment, by arranging the organic film 319 in the rectangular area around the outside of the IC chip bonding area 6a-3 of the circuit board 6-3, the organic film 319 is made of the bonding material flow regulating member. As an example of the bonding material flow restriction film, flow restriction of the bonding material 5 is performed. As a result, as compared with the case where there is no organic film 319, as shown in FIG. 14, the bonding surface of the IC chip 1-3 and the IC chip bonding region 6a- of the circuit board 6-3 in the pressure bonding step. 3, the organic film 319 functions as a bonding material flow restricting member when the bonding material 5 flows from the central portion to the peripheral portion of the bonding material 5 between the IC chip 1-3 and the circuit board 6-3. The flow rate of the bonding material 5 can be reduced, the flow of the bonding material 5 from the central portion to the peripheral portion can be substantially uniformed, and the distribution of the bonding material 5 in the bonding surface of the IC chip 1-3 is achieved. Can be made uniform, adhesion can be improved, and bonding and sealing reliability can be improved.
[0087]
(Fourth embodiment)
FIG. 17 shows an IC chip mounting method and an IC chip mounting body manufactured by the method as an example of the electronic component mounting method and the electronic component mounting body manufactured by the method according to the fourth embodiment of the present invention. This will be described with reference to FIG. FIGS. 17A and 17B are a side view and a rear view of the IC chip before the bonding step of the IC chip mounting method according to the fourth embodiment, and FIG. 18 is a flow state of the bonding material in the pressure bonding step. FIG. 19 is a plan view showing the movement of the bonding material on the circuit board through the IC chip, and FIG. 19 is a partial cross-sectional side view of the IC chip, the circuit board, and the bonding material in the crimping process. FIGS. 20A and 20B are a side view and a rear view of the IC chip before the joining step of the IC chip mounting method according to the conventional example for explaining the fourth embodiment, and FIG. FIG. 22 is a plan view showing the flow state of the bonding material in the crimping process and showing the movement of the bonding material on the circuit board through the IC chip, and FIG. 22 shows the IC chip, the circuit board, and the bonding material in the crimping process. It is a partial cross section side view.
[0088]
In the third embodiment, the organic film 319 is disposed in the rectangular frame region 320 inside each side of the quadrangular, that is, square or rectangular IC chip bonding region 6a-4 and in the vicinity of the side portion of each side. For example, the IC chip 1-4 has one row of bumps 2,..., 2 in the vicinity of the sides of each of the four sides. However, in the fourth embodiment, FIG. As shown in FIG. 17, bumps 2, which extend in a single line along the longitudinal direction at the center of the short direction and are arranged at approximately equal intervals on the joint surface of a rectangular IC chip 1-4 as an example of an electronic component, , 2, and as shown in FIG. 18, an organic film 329, which is an example of a bonding material flow regulating member, is disposed near both sides of the bumps 2,. 329 regulates the flow of the bonding material 5 A.
[0089]
The organic film 329 is made of, for example, polyimide or polybenzoxazole (PBO) that functions as a heat-resistant coating that prevents electrical contact with other wirings or bumps to maintain insulation and protect the conductor. It is composed of a solder resist, and such an organic film 329 is spin-coated by a thickness of about 3 to 7 μm, for example, and as shown in FIG. 18, from the outside of the IC chip bonding region 6a-4 of the circuit board 6-4. Leaving a central portion along the longitudinal direction in which the electrodes 7,..., 7 are formed, extending in one row along the longitudinal direction and arranged at substantially equal intervals in the central portion in the short direction of the IC chip bonding region 6a-4, It can be formed by coating the entire surface up to both sides.
[0090]
Conventionally, as shown in FIG. 20 and FIG. 21, bumps 702,..., Arranged in a row along the longitudinal direction at a central portion in the short direction and arranged at approximately equal intervals on the joint surface of the rectangular IC chip 701. , 702. In a state where the bumps 702,..., 702 are arranged on the IC chip 701, after supplying the bonding material 705 to the circuit board 706, the bump 702 is formed on the electrode 704 on the bonding surface of the IC chip 701. The bump 702 on the electrode 704 of the IC chip 701 and the electrode 707 of the circuit board 706 are in electrical contact via the bonding material 705 between the bonding surface of the IC chip 701 and the circuit board 706. The circuit board 706 is placed on the base 710, and the heated pressure member 708 is brought into contact with the IC chip 701 to pressurize the IC chip 701 in a heated and pressurized state. The bonding material 705 between the bonding surface of the IC chip 701 and the circuit board 706 is cured. In such a case, on the both sides of the bumps 702,..., 702 centered on the bumps 702,. 22, the rectangular IC chip 701 moves with respect to the circuit board 706 in the short direction, that is, in the width direction at a large flow rate, and the density of the bonding material 705 is reduced, thereby reducing the IC chip bonding region. The adhesion force, that is, the bonding force and the sealing force in the peripheral portion other than the central portion in the short direction in 706a are reduced, and peeling occurs.
[0091]
In order to prevent such a decrease in bonding force and sealing force, in the fourth embodiment, before the bonding material supply step, as shown in FIG. 18, on the bonding surface of the rectangular IC chip 1-4, The short side direction of the IC chip bonding region 6a-4 of the circuit board 6-4 that faces the bumps 2,..., 2 that extend in one row along the long direction in the central portion in the short side direction and are arranged at approximately equal intervals. An organic film 329 as an example of a bonding material flow restricting member is disposed up to the vicinity of the electrodes 7,. As a result, the bonding surface of the IC chip 1-4, in other words, the outer periphery of the IC chip bonding region 6a-4 of the circuit board 6-4 and the vicinity of both sides of the central portion in the short direction of the IC chip bonding region 6a-4. By covering with the film 329, the gap between the bonding surface of the IC chip 1-4 and the IC chip bonding area 6a-4 of the circuit board 6-4 is narrowed in the area where the organic film 329 is disposed, Resistance can be brought about in the flow of the bonding material 5, and in the bonding surface of the IC chip 1-4 and in the IC chip bonding region 6 a-4 of the circuit board 6-4, compared with the case where there is no organic film 329. The distribution of the bonding material 5 can be made uniform. As a result, a decrease in the density of the bonding material 5 can be prevented, a sufficient amount of resin for sealing the side surface of the IC chip is supplied, and the fillet 5A for sealing the side surface of the IC chip 1-4 is enlarged. The separation between the IC chip 1-4 and the bonding material 5 at the periphery of the IC chip bonding region 6a-4 and the separation between the electrode 7 of the substrate 6-4 and the bonding material 5 are effective. Can be prevented.
[0092]
The method for forming the organic film 329 is the same as the method for forming the organic film 319 of the third embodiment.
[0093]
With the organic film 329 thus formed, in the bonding material supply step, at least one of the bonding surface of the IC chip 1-4 and the IC chip bonding region 6a-4 of the circuit board 6-4 is at least A bonding material 5 containing an insulating thermosetting resin is supplied. The method for supplying the bonding material 5 is the same as in the first embodiment.
[0094]
Next, in the bonding process, the bonding surface of the IC chip 1-4 is superimposed on the IC chip bonding area 6a-4 of the circuit board 6-4 with the bonding material 5 interposed therebetween, and the bumps 2 are formed on the respective electrodes 4. Each electrode 4 of the IC chip 1-4 is interposed between the bonding surface of the formed IC chip 1-4 and the IC chip bonding region 6a-4 of the circuit board 6-4 via the bonding material 5. After positioning so that the said bump 2 and each electrode 7 of the said circuit board 6-4 may contact electrically, it joins. This bonding step may be performed in a state where the circuit board 6-4 is placed on the base 10, or the IC chip 1-4 may be connected to the circuit board 6 via the bonding material 5 at another location. 4, the circuit board 6-4 on which the IC chip 1-4 is overlaid via the bonding material 5 is placed on the base 10 through the bonding material 5. May be.
[0095]
Next, in the main pressing step, the pressing member 8 is brought into contact with the IC chip 1-4, and the base on which the circuit board 6-4 on which the IC chip 1-4 is overlapped via the bonding material 5 is placed. A pressing force is applied from the pressing member 8 toward 10, and the heat of the heater built in the pressing member 8 is transmitted from the pressing member 8 to the IC chip 1-4. As a result, a predetermined pressure is applied while applying a predetermined temperature, and the bonding surface of the IC chip 1-4 is pressed against the IC chip bonding region 6a-4 of the circuit board 6-4, whereby the IC chip 1-4. The bumps 2 on the respective electrodes 4 on the bonding surface of each contact the electrodes 7 in the IC chip bonding region 6a-4 of the circuit board 6-4. At this time, since the rectangular IC chip 1-4 has the organic film 329 disposed on both sides in the short direction, that is, the width direction with respect to the circuit board 6-4, the flow resistance can be increased. 2, 2, 2, the flow velocity between the IC chip 1-4 and the circuit board 6-4 is reduced as shown in FIG. 19 as compared with the case where the organic film 329 is not provided. The flow from the central part to the peripheral part of the bonding material 5 is similarly restricted in the vicinity of the side of each side in the IC chip bonding region 6a-4 of the circuit board 6-4, and the bonding is unevenly performed. The material 5 is prevented from flowing, and the bonding material 5 is distributed and held substantially uniformly in at least the entire IC chip bonding region 6a-4, and is cured by the heat, whereby the IC chip mounting body can be manufactured. That is, in the main press-bonding step, the organic film 329 restricts the non-uniform extrusion of the bonding material 5 when the IC chip 1-4 is pressed from the central portion to the peripheral portion of the bonding region 6a-4. be able to.
[0096]
In the above description, the bumps 2 of the IC chip 1-4 and the electrodes 7 of the circuit board 6-4 are in contact with each other in the bonding process. However, the present invention is not limited to this. Each bump 2 of the IC chip 1-4 and each electrode 7 of the circuit board 6-4 are not in contact with each other, and each bump 2 of the IC chip 1-4 and each electrode 7 of the circuit board 6-4 are not in contact with each other for the first time in this crimping process. May be in contact with each other.
[0097]
According to the fourth embodiment, in the rectangular IC chip bonding region 6a-4, the rectangular IC chip 1-4 is supported at one point in the lateral direction, that is, the width direction with respect to the circuit board 6-4, and By disposing the organic film 329 on both sides thereof, the IC chip 1-4 and the circuit board 6 as shown in FIG. 19 as compared with the case where the organic film 329 is not provided on both sides of the row of the bumps 2,. -4 between the bonding surface of the IC chip 1-4 and the IC chip bonding region 6a-4 of the circuit board 6-4 in the crimping step. The organic film 329 functions as a bonding material flow restricting member when the bonding material 5 flows from the central portion to the peripheral portion of the bonding material 5 to substantially uniform the flow of the bonding material 5 from the central portion to the peripheral portion. And bonding of IC chip 1-4 Hakare is uniform distribution of bonding material 5 at the inner, improves adhesive force, it is possible to enhance the reliability of the bonding and sealing.
[0098]
(Fifth embodiment)
An IC chip mounting method and an IC chip mounting body manufactured by the method as an example of an electronic component mounting method and an electronic component mounting body manufactured by the method according to the fifth embodiment of the present invention are shown in FIGS. This will be described with reference to FIG. FIGS. 23A and 23B are a side view and a back view of the IC chip before the bonding step of the IC chip mounting method according to the fifth embodiment, and FIG. 24 is a flow state of the bonding material in the pressure bonding step. FIG. 3 is a plan view showing the movement of the bonding material on the circuit board through the IC chip. FIGS. 25A and 25B are a side view and a rear view of the IC chip before the joining step of the IC chip mounting method according to the conventional example for explaining the fifth embodiment, and FIG. It is a top view which shows the flow state of the joining material in a crimping | compression-bonding process, and shows a motion of the joining material on a circuit board seeing through an IC chip.
[0099]
In the fourth embodiment, the bumps 2,..., 2 are arranged in the center of the square IC chip 1-5, but the present invention is not limited to this. For example, in the fifth embodiment, as shown in FIG. 23, two opposite sides of four sides (left and right sides in FIG. 23B) of the joint surface of a rectangular IC chip 1-5 as an example of an electronic component. 2) having only one row of bumps 2,..., 2 substantially parallel to the sides and at substantially equal intervals, and the remaining two sides of the bonding surface of the IC chip 1-5 ( In FIG. 23 (B), there are no bumps 2 in the vicinity of the upper and lower sides, and the outside and inside of the IC chip bonding region 6a-5 of the circuit board 6-5 as an example of the circuit formed body An organic film 339 as an example of a bonding material flow restricting member is disposed on almost the entire surface except for the bonding portion of each electrode 7 to each bump 2, and the flow of the bonding material 5 is restricted by the organic film 339. is there.
[0100]
The organic film 339 is made of, for example, polyimide or polybenzoxazole (PBO) that functions as a heat-resistant coating that prevents electrical contact with other wirings or bumps to maintain insulation and protect the conductor. The organic film 339 is composed of a solder resist and spin-coated with, for example, a thickness of about 3 to 7 μm, and is applied to the entire surface of the IC chip bonding area 6a-5 of the circuit board 6-5 and the outside thereof. Thereafter, as shown in FIG. 24, the region 340 including the joint necessary for joining to the bumps 2,..., 2 of the electrodes 7,. The region 340 to be removed may be independent in a strip shape, or may be connected and formed in a frame shape. As a result, the organic film 339 is formed almost entirely on the entire outside and inside of the IC chip bonding area 6a-5 of the circuit board 6-5 except for the bonding portion with each bump 2 of each electrode 7. Can do.
[0101]
Conventionally, as shown in FIG. 25, bumps 702, 704, and 704 are formed on electrodes 704,..., 704 in the vicinity of opposite sides of the rectangular IC chip 701 (two sides on the left and right in FIG. 25B). .., 702 are arranged at approximately equal intervals, while there are no bumps 702 in the vicinity of the remaining two sides of the bonding surface of the IC chip 701 (upper and lower sides in FIG. 25B), It is assumed that the organic film 539 is disposed around the outside of the IC chip bonding region 706a of the circuit board 706. In this state where the bumps 702,..., 702 are arranged on the IC chip 701, the bonding material 705 is supplied to the circuit substrate 706, and then the IC chip 701 in which the bump 702 is formed on the electrode 704 on the bonding surface. The bump 702 on the electrode 704 of the IC chip 701 and the electrode 707 of the circuit board 706 are electrically connected via the bonding material 705 between the bonding surface and the IC chip bonding region 706a of the circuit board 706. The circuit board 706 is placed on the base 710, and the heated pressing member 708 is brought into contact with the IC chip 701 to pressurize it. The bonding material between the bonding surface of the IC chip 701 and the IC chip bonding region 706a of the circuit board 706 by crimping the IC chip 701 05 is cured. In such a case, when the bonding material 705 flows out of the IC chip bonding area 706a of the circuit board 706 without the organic film 539 toward the outside of the IC chip bonding area 706a of the circuit board 706 on which the organic film 539 is disposed, The bonding material 705 flows out more in the vicinity of the side where the bump 702 is missing than in the vicinity of the side where the bumps 702,..., 702 arranged at substantially equal intervals on the bonding surface of the chip 701 are arranged. become. As a result, the density of the bonding material 705 is sparse in the central portion of the IC chip 701, and the bonding force and the sealing force are reduced.
[0102]
In order to prevent such a decrease in bonding force and sealing force, in the fifth embodiment, before the bonding material supplying step, as shown in FIGS. An organic film 339 as an example of a bonding material flow restricting member is disposed almost entirely on the outside and inside of the IC chip bonding region 6a-5 except for the bonding portion between the electrode 7 and the bump 2; The organic film 339 regulates the flow of the bonding material 5. As a result, the rectangular IC chip 1-5 has the bumps 2,..., 2 having the bumps 2,..., 2 on the opposite sides (two sides of the left and right short sides in FIG. Since the organic film 339 is similarly arranged in each of the two opposite sides (two sides of the upper and lower long sides in FIG. 23B) in the vicinity of the side portion, the flow resistance is also the same. Compared with the case where the organic film 339 is not provided, the flow resistance is increased, and the flow regulation of the bonding material 5 is similarly performed.
[0103]
In this way, the organic film 339 is disposed almost entirely on the entire outside and inside of the IC chip bonding region 6a-5 of the circuit board 6-5 except for the bonding portion between the electrode 7 and the bump 2. In the bonding material supplying step, at least one of the bonding surface of the IC chip 1-5 or the IC chip bonding region 6a-5 of the circuit board 6-5 as an example of the circuit forming body is at least insulative thermosetting. A bonding material 5 containing a conductive resin is supplied. The method for supplying the bonding material 5 is the same as in the first embodiment.
[0104]
Next, in the bonding process, the bonding surface of the IC chip 1-5 is superimposed on the IC chip bonding region 6a-5 of the circuit board 6-5 with the bonding material 5 interposed therebetween, and the bumps 2 are formed on the respective electrodes 4. Each electrode 4 of the IC chip 1-5 is interposed between the bonding surface of the formed IC chip 1-5 and the IC chip bonding region 6a-5 of the circuit board 6-5 via the bonding material 5. The bumps 2 and the respective electrodes 7 of the circuit board 6-5 are aligned so that they are in electrical contact, and then joined. This joining step may be performed in a state where the circuit board 6-5 is placed on a base (for example, see the base 10 in FIG. 19), or via the joining material 5 at another location. After the IC chip 1-5 is overlaid on the circuit board 6-5 and the bonding process is performed, the circuit board 6-5 on which the IC chip 1-5 is overlaid through the bonding material 5 is used in the main bonding process. It may be placed on a table.
[0105]
Next, in the main crimping step, a circuit board on which the IC chip 1-5 is overlapped with the bonding material 5 by bringing a pressing member (see, for example, the pressing member 8 in FIG. 19) into contact with the IC chip 1-5. A pressing force is applied from the pressing member toward the base on which 6-5 is placed, and the heat of the heater incorporated in the pressing member is transmitted from the pressing member to the IC chip 1-5. As a result, a predetermined pressure is applied while applying a predetermined temperature, and the bonding surface of the IC chip 1-5 is pressed against the IC chip bonding region 6a-5 of the circuit board 6-5, whereby the IC chip 1-5. The bumps 2 on the respective electrodes 4 on the bonding surfaces of the first and second electrodes are in contact with the respective electrodes 7 in the IC chip bonding region 6a-5 of the circuit board 6-5. At this time, the bonding material 5 between the bonding surface of the IC chip 1-5 and the IC chip bonding region 6a-5 of the circuit board 6-5 is moved to the center of the bonding surface of the IC chip 1-5. Try to push from the part toward the periphery. Here, as a result of the organic film 339 being disposed at the position where the bump 2 is missing as described above, as a result of the vicinity of the side portion of each side of the bonding surface of the IC chip 1-5. In this case, the flow velocity is substantially constant in the vicinity of any of the sides, and similarly, the flow from the central portion to the peripheral portion of the bonding material 5 is restricted, and the bonding material 5 flows non-uniformly. The bonding material 5 is distributed and held substantially uniformly over at least the entire bonding surface of the IC chip 1-5, and is cured by the heat, whereby an IC chip mounting body can be manufactured. That is, in the main press-bonding step, the organic film 339 provided on the IC chip 1-5 causes the non-uniformity of the bonding material 5 when the IC chip 1-5 is pressed from the central portion to the peripheral portion of the bonding surface. Can be controlled.
[0106]
The height of each organic film 339 as an example of the bonding material flow regulating member, the heat resistance of each organic film 339, and the example of the bonding material 5 are the same as in the fourth embodiment.
[0107]
In the above description, the bumps 2 of the IC chip 1-5 and the electrodes 7 of the circuit board 6-5 are in contact with each other in the bonding process. However, the present invention is not limited to this. The bumps 2 of the IC chip 1-5 and the electrodes 7 of the circuit board 6-5 are not in contact with each other. May be in contact with each other.
[0108]
According to the fifth embodiment, the bonding material flow is substantially entirely performed on the entire outside and inside of the IC chip bonding region 6a-5 of the circuit board 6-5 except for the bonding portion with the bump 2 of the electrode 7. By disposing the organic film 339 as an example of a restricting member, the above-described bonding surface of the IC chip 1-5 and the IC chip bonding region 6a-5 of the circuit board 6-5 in the crimping step. When the bonding material 5 flows from the central part to the peripheral part of the bonding material 5, the organic film 339 functions as a bonding material flow regulating member, and the center of the bonding material 5 in the vicinity of the side part of each side of the IC chip 1-5. The flow from the part to the peripheral part can be substantially uniformed, and the distribution of the bonding material 5 in the bonding surface of the IC chip 1-5 can be made uniform, the adhesion force is improved, and the reliability of bonding and sealing is improved. Can increase the sex.
[0109]
(Sixth embodiment)
FIG. 27 shows an IC chip mounting method and an IC chip mounting body manufactured by the method as an example of the electronic component mounting method and the electronic component mounting body manufactured by the method according to the sixth embodiment of the present invention. This will be described with reference to FIG. 27A and 27B are a side view and a plan view of the circuit board before the joining step of the IC chip mounting method according to the sixth embodiment, and FIGS. 27C and 28 are views in the crimping step. It is the partial cross section side view and partial cross section side view of the IC chip, the circuit board, and the bonding material partially enlarged. FIGS. 29A and 29B are a side view and a plan view of the circuit board before the joining step of the IC chip mounting method according to the conventional example for explaining the sixth embodiment. C) and FIG. 30 are a partial cross-sectional side view and a partially enlarged partial cross-sectional side view of the IC chip, the circuit board, and the bonding material in the above-described conventional crimping process.
[0110]
The position where the organic film 339 as an example of the bonding material flow restricting member is disposed is not limited to the IC chip bonding region 6a-6 of the circuit board 6-6, and the circuit board as in the sixth embodiment. You may make it arrange | position outside 6-6 IC chip joining area | region 6a-6. That is, in the sixth embodiment, as shown in FIGS. 27 (A), (B), (C) and FIG. 28, an IC chip bonding region 6a- of a circuit board 6-6 as an example of a circuit forming body. The dam portion 345 as a fillet forming convex portion which is configured in a rectangular frame shape surrounding the IC chip bonding region 6a-6 and protrudes larger than the circuit board surface is provided in the protruding material protruding region of the bonding material flow. A bonding material 5 provided as an example of a regulating member and sandwiched between a bonding surface of a square IC chip 1-6 as an example of an electronic component and an IC chip bonding region 6a-6 of a circuit board 6-6 is pressure-bonded. When the process flows out of the IC chip bonding area 6a-6 of the circuit board 6-6 in the process, the fillet 5 is dammed up so as to rise by the dam portion 345 and covers the side surface of the IC chip 1-6. The Increase, to improve the sealing effect of the IC chip 1-6 by bonding material 5 functioning as a sealing resin, it is also possible to be able to improve the reliability.
[0111]
The dam portion 345 can be formed of, for example, an organic film such as a solder resist, or a dummy electrode having the same configuration as the electrode 7 of the circuit board 6-6 and thicker than the electrode 7.
[0112]
When the dam portion 345 is composed of the organic film, it can be composed of, for example, two layers of organic films, that is, a lower organic film 349 and an upper organic film 348. The lower organic film 349 is made of, for example, polyimide or polybenzoxazole (PBO) that functions as a heat-resistant coating that prevents electrical contact with other wirings or bumps to maintain insulation and protect the conductor. The organic film 349 is spin-coated by a thickness of about 3 to 7 μm, for example, and as shown in FIG. 27B, the IC chip bonding region 6a- of the circuit board 6-6 is formed. Apply to the outside of 6 in the form of a square frame. Thereafter, an upper organic film 348 having a small width is formed on the organic film 349 only in the vicinity immediately outside the IC chip bonding region 6a-6. The upper organic film 348 is formed by screen printing of a paste resin (combination of normal solder resist printing and convex printing), or by attaching or laminating a film. Here, the specific example of each layer of the dam portion 345 is preferably an epoxy resin or a urethane resin, considering that the resist material is used as it is. When the film is formed by pasting a film, a thermoplastic resin such as PET (polyethylene terephthalate), polyethylene, or polypropylene resin, or an epoxy (uncured) film can be used. In view of the adhesion to the substrate side, an epoxy resin is preferable.
[0113]
Conventionally, as shown in FIG. 29, it is assumed that an organic film 549 is disposed in a rectangular frame shape around the outside of an IC chip bonding region 706a of a circuit board 706 corresponding to a square IC chip 701. After supplying the bonding material 705 to the circuit board 706 with the organic film 549 thus arranged, the bonding is performed between the bonding surface of the IC chip 701 and the IC chip bonding region 706a of the circuit board 706. The bump 702 on the electrode 704 of the IC chip 701 and the electrode 707 of the circuit board 706 are bonded to each other through the material 705 so that the circuit board 706 is mounted on the base 710. The IC chip 701 is pressed against the IC chip 701 in a heated and pressurized state by bringing the heated pressing member 708 into contact with the IC chip 701 and pressurizing the IC chip 701, and the circuit board 706. The bonding material 705 with the IC chip bonding region 706a is cured. In such a case, when the bonding material 705 flows out of the IC chip bonding region 706a of the circuit board 706 without the organic film 539 toward the outside of the IC chip bonding region 706a of the circuit board 706 where the organic film 549 is disposed, Until the bonding material 705 comes into contact with the organic film 549 disposed away from the chip bonding region 706a, the organic film 549 flows out from between the bonding surface of the IC chip 701 and the IC chip bonding region 706a of the circuit board 706, When the bonding material 705 comes into contact with the film 549, the bonding material 705 rises and partially covers the side surface of the IC chip 701. However, since only a part of the side surface of the IC chip 701 is covered, sealing with the bonding material 705 is insufficient.
[0114]
In order to prevent such insufficient sealing, in the sixth embodiment, before the bonding material supplying step, as shown in FIGS. 27A and 27B, the IC chip of the circuit board 6-6 is used. A bonding material protruding outside the bonding area 6a-6, in other words, a rectangular frame-shaped area surrounding the IC chip bonding area 6a-6 at a predetermined interval from the IC chip bonding area 6a-6, a solder resist or the like A dam portion 345 made of the organic film and projecting larger than the circuit board surface is disposed as an example of a bonding material flow restriction member, and the flow of the bonding material 5 is regulated by the dam portion 345. As a result, since the dam portion 345 is disposed, the bonding material 5 is formed along the circuit board surface so that the bonding material 5 is raised by the dam portion 345 as compared with the conventional case where the dam portion 345 is not provided or is low. The fillet 5A can be enlarged so as to cover the side surface of the IC chip 1-6.
[0115]
In the state where the dam portion 345 is arranged in this manner, in the bonding material supply step, the bonding surface of the IC chip 1-6 or the IC chip bonding region 6a-6 of the circuit board 6-6 as an example of the circuit forming body At least one of them is supplied with a bonding material 5 containing at least an insulating thermosetting resin. The method for supplying the bonding material 5 is the same as in the first embodiment.
[0116]
Next, in the bonding process, the bonding surface of the IC chip 1-6 is superimposed on the IC chip bonding region 6a-6 of the circuit board 6-6 with the bonding material 5 interposed therebetween, and the bumps 2 are formed on the respective electrodes 4. Each electrode 4 of the IC chip 1-6 is interposed between the bonding surface of the formed IC chip 1-6 and the IC chip bonding region 6a-6 of the circuit board 6-6 via the bonding material 5. The bumps 2 and the electrodes 7 on the circuit board 6-6 are aligned so that they are in electrical contact with each other and then bonded. This bonding step may be performed in a state where the circuit board 6-6 is placed on the base 10, or the IC chip 1-6 is connected to the circuit board 6 through the bonding material 5 at another location. 6, the circuit board 6-6 on which the IC chip 1-6 is overlaid via the bonding material 5 is placed on the base 10 through the bonding material 5. May be.
[0117]
Next, in the main pressing step, the pressing member 8 is brought into contact with the IC chip 1-6, and the base on which the circuit board 6-6 on which the IC chip 1-6 is overlapped via the bonding material 5 is placed. A pressing force is applied from the pressing member 8 toward 10, and the heat of the heater built in the pressing member 8 is transmitted from the pressing member 8 to the IC chip 1-6. As a result, by applying a predetermined pressure while applying a predetermined temperature, the bonding surface of the IC chip 1-6 is pressed against the IC chip bonding region 6a-6 of the circuit board 6-6, whereby the IC chip 1-6. The bumps 2 on the respective electrodes 4 on the bonding surfaces of the first and second electrodes are in contact with the respective electrodes 7 in the IC chip bonding region 6a-6 of the circuit board 6-6. At this time, the bonding material 5 between the bonding surface of the IC chip 1-6 and the IC chip bonding region 6a-6 of the circuit board 6-6 is replaced with the bonding surface of the IC chip 1-6 and the An attempt is made to push outward from between the IC chip bonding region 6a-6 of the circuit board 6-6. Here, as described above, the dam portion 345 disposed in a rectangular frame-like region surrounding the IC chip bonding region 6a-6 at a predetermined interval from the IC chip bonding region 6a-6 is pushed out by the dam part 345. As a result of the blocking of the bonding material 5 that has flowed out along the surface of the circuit board, the bonding material 5 is raised by the dam portion 345 on the side surface of the IC chip 1-6, and at least on the circuit board side of the side surface of the IC chip 1-6. After being able to cover up to about half, it is cured by the heat and an IC chip mounting body can be manufactured. That is, in the main crimping step, a large fillet 5A can be formed on the side surface of the IC chip 1-6 by the dam portion 345 provided on the IC chip 1-6. The sealing force can be improved.
[0118]
The height of the dam portion 345 as an example of the bonding material flow regulating member is preferably at least twice as thick as that of the conventional organic film 339 in order to reliably achieve the above effect. About the heat resistance of each organic film 348,349 which comprises the dam part 345, and the example of the joining material 5, it is the same as that of 5th Embodiment.
[0119]
In the above description, the bumps 2 of the IC chip 1-6 and the electrodes 7 of the circuit board 6-6 are in contact with each other in the bonding process. However, the present invention is not limited to this. The bumps 2 of the IC chip 1-6 and the electrodes 7 of the circuit board 6-6 do not come into contact with each other. May be in contact with each other.
[0120]
In FIGS. 27C and 28, the passivation film 309 is disposed on the bonding surface of the IC chip 1-6, but the present invention is not limited to this, and the passivation film 309 may be omitted.
[0121]
According to the sixth embodiment, the dam portion 345 is bonded to a rectangular frame-shaped region surrounding the IC chip bonding region 6a-6 at a predetermined interval from the IC chip bonding region 6a-6 of the circuit board 6-6. By arranging as an example of the material flow regulating member, the bonding material 5 between the bonding surface of the IC chip 1-6 and the IC chip bonding region 6a-6 of the circuit board 6-6 in the crimping step. When the bonding material 5 flows to the outside of the IC chip bonding area 6a-6, the bonding material 5 that has been pushed out and flows out along the surface of the circuit board is dammed up by the dam portion 345, and rises. The large fillet 5A can be formed on the side surface of the IC 6, the sealing force on the side surface of the IC chip 1-6 can be improved, the adhesion force is improved, and the reliability of bonding and sealing is improved. In That.
[0122]
(Seventh embodiment)
As an example of an electronic component mounting method and an electronic component mounting body manufactured by the electronic component mounting method according to the seventh embodiment of the present invention, an IC chip mounting method and an IC chip mounting body manufactured by the method are shown in FIGS. This will be described with reference to FIG. FIGS. 31A and 31B are a side view and a plan view of a circuit board before the joining process of the IC chip mounting method according to the seventh embodiment, and FIG. 31C shows the IC chip in the crimping process. FIG. 32 is a partial cross-sectional side view of the circuit board and the bonding material, and FIG. 32 is a plan view showing the flow state of the bonding material in the crimping process and showing the movement of the bonding material on the circuit board through the IC chip. 33A and 33B are a side view and a plan view of the circuit board before the joining step of the IC chip mounting method according to the conventional example for explaining the seventh embodiment, and FIG. 33 is a partial cross-sectional side view of the IC chip, the circuit board, and the bonding material in the conventional crimping process of FIG. 33. FIG. 34 shows the flow state of the bonding material in the conventional crimping process of FIG. It is a top view which shows the movement of the joining material on a circuit board seeing through.
[0123]
In the seventh embodiment, as shown in FIG. 31B, an IC of a circuit board 6-7 as an example of a circuit formation corresponding to a bonding surface of a square IC chip 1-7 as an example of an electronic component. In the chip bonding substrate 6-7, the electrode 7 of the circuit substrate 6-7 is disposed in a region where the wiring density is not more than a predetermined value and is eccentric from the center (in other words, a region where the bonding material 5 exhibits a non-uniform flow). The convex portion 355 is provided as a bonding material flow restricting member having substantially the same thickness as the above. The protrusion 355 is made of a solder resist or a copper foil. As a method for forming the convex portion 355, in the case of a copper foil, it is formed at the same time as wiring (for example, formed by etching a copper foil attached to a resin or plating on a resin plate). When using a solder resist, it is preferable to carry out simultaneously with the solder resist formation on a board | substrate.
[0124]
By arranging the convex portions 355 in this way, the wiring density of the electrode pattern can be made uniform in the IC chip bonding substrate 6-7 of the circuit substrate 6-7, and the bonding material 5 which is a sealing resin can be formed. The flow can be made uniform, and the amount of protrusion of the bonding material 5 protruding outside from between the IC chip 1-7 and the circuit board 6-7 can be made uniform to stabilize the bonding.
[0125]
In contrast, conventionally, as shown in FIGS. 33 and 34, a region 706d having a wiring density of a predetermined value or less exists in the IC chip bonding region 706a of the circuit board 706, and the pattern wiring density is not uniform. In such a case, there are the following problems. After supplying the bonding material 705 to the circuit board 706, the bonding material is interposed between the bonding surface of the IC chip 701 in which the bump 702 is formed on the electrode 704 on the bonding surface and the IC chip bonding region 706 a of the circuit board 706. The bump 702 on the electrode 704 of the IC chip 701 and the electrode 707 of the circuit board 706 are joined to each other via the 705, and the circuit board 706 is placed on a base. The IC chip 701 is pressed against the IC chip 701 in a heated and pressurized state by bringing the heated pressing member into contact with the IC chip 701 to press the IC chip 701 and the IC chip of the circuit board 706. The bonding material 705 between the bonding region 706a is cured. In such a case, when the bonding material 705 flows out from the inside of the IC chip bonding region 706a of the circuit board 706 to the outside, the flow of the bonding material 705 becomes uneven, and from between the IC chip 701 and the circuit board 706. The protruding amount of the bonding material 705 that protrudes to the outside becomes non-uniform, and the bonding cannot be stabilized.
[0126]
In order to prevent such a decrease in the bonding force and the sealing force, in the seventh embodiment, before the bonding material supplying step, as shown in FIGS. 31A and 31B, the circuit board 6-7 is used. As a bonding material flow regulating member having a thickness substantially the same as the thickness of the electrode 7 of the circuit board 6-7 in a region where the electrode wiring density in the IC chip bonding substrate 6-7 is less than a predetermined value and deviated from the center. The convex portion 355 is provided.
[0127]
In the state in which the convex portion 355 is arranged in this way, in the bonding material supply step, at least one of the bonding surface of the IC chip 1-7 and the IC chip bonding substrate 6-7 of the circuit board 6-7 is at least A bonding material 5 containing an insulating thermosetting resin is supplied. The method for supplying the bonding material 5 is the same as in the first embodiment.
[0128]
Next, in the bonding process, the bonding surface of the IC chip 1-7 is superimposed on the IC chip bonding substrate 6-7 of the circuit board 6-7 with the bonding material 5 interposed therebetween, and the bumps 2 are formed on the respective electrodes 4. Each electrode 4 of the IC chip 1-7 is interposed between the bonding surface of the formed IC chip 1-7 and the IC chip bonding substrate 6-7 of the circuit board 6-7 with the bonding material 5 interposed therebetween. The bumps 2 and the electrodes 7 of the circuit board 6-7 are aligned so that they are in electrical contact, and then joined. This bonding step may be performed in a state where the circuit board 6-7 is placed on the base 10, or the IC chip 1-7 may be connected to the circuit board 6 through the bonding material 5 at another location. 7, the circuit board 6-7 on which the IC chip 1-7 is overlaid via the bonding material 5 is placed on the base 10 in the final press-bonding process. May be.
[0129]
Next, in the main crimping step, the pressing member 8 is brought into contact with the IC chip 1-7, and the base on which the circuit board 6-7 on which the IC chip 1-7 is superimposed with the bonding material 5 placed thereon is placed. A pressing force is applied from the pressing member 8 toward 10 and the heat of the heater built in the pressing member 8 is transmitted from the pressing member 8 to the IC chip 1-7. As a result, a predetermined pressure is applied while applying a predetermined temperature, and the bonding surface of the IC chip 1-7 is pressed against the IC chip bonding substrate 6-7 of the circuit substrate 6-7, whereby the IC chip 1-7. The bumps 2 on the electrodes 4 on the bonding surfaces of the circuit board 6-7 are in contact with the electrodes 7 in the IC chip bonding substrate 6-7 of the circuit board 6-7. At this time, the bonding material 5 is between the bonding surface of the IC chip 1-7 and the IC chip bonding substrate 6-7 of the circuit board 6-7 from the central portion of the IC chip bonding substrate 6-7. When flowing to the peripheral portion, as shown in FIG. 32, when there is a convex portion 355, the electrode wiring density in the IC chip bonded substrate 6-7 is substantially uniform as compared to the case without the convex portion 355. When the bonding material 5 flows from the center portion to the peripheral portion of the IC chip bonding substrate 6-7, the bonding material 5 is prevented from flowing non-uniformly and bonded to the entire IC chip bonding substrate 6-7. The material 5 is distributed and held substantially uniformly and cured by the heat, whereby an IC chip mounting body can be manufactured. That is, in the main press-bonding step, the protrusions 355 can regulate the non-uniform extrusion of the bonding material 5 when the IC chip bonding substrate 6-7 is pressed from the central portion to the peripheral portion. The example of the bonding material 5 is the same as that of the fifth embodiment.
[0130]
In the above description, the bumps 2 of the IC chip 1-7 and the electrodes 7 of the circuit board 6-7 are in contact with each other in the bonding process. However, the present invention is not limited to this. The bumps 2 of the IC chip 1-7 and the electrodes 7 of the circuit board 6-7 are not in contact with each other. May be in contact with each other.
[0131]
In FIG. 31C, the passivation film 309 is disposed on the bonding surface of the IC chip 1-7. However, the present invention is not limited to this, and the passivation film 309 may be omitted. Further, the organic film 356 similar to the conventional organic film 549 is arranged in a rectangular frame shape at a predetermined interval outside the IC chip bonding substrate 6-7. However, such an organic film 356 may be omitted. .
[0132]
According to the seventh embodiment, the electrode of the circuit board 6-7 is disposed in a region where the electrode wiring density in the IC chip bonding substrate 6-7 of the circuit substrate 6-7 is not more than a predetermined value and is eccentric from the center. By providing the convex portion 355 as a bonding material flow regulating member having substantially the same thickness as the thickness of 7, the pattern wiring density can be made uniform in the IC chip bonding substrate 6-7 of the circuit substrate 6-7. Stabilization of the bonding by uniformizing the flow of the bonding material 5 which is the sealing resin and uniformizing the amount of the bonding material 5 that protrudes between the IC chip 1-7 and the circuit board 6-7. Can be achieved.
[0133]
(Eighth embodiment)
As an example of an electronic component mounting method and an electronic component mounting body manufactured by the electronic component mounting method according to the eighth embodiment of the present invention, an IC chip mounting method and an IC chip mounting body manufactured by the method are shown in FIGS. This will be described with reference to FIG. FIGS. 35A and 35B are a side view and a plan view of the circuit board before the joining process of the IC chip mounting method according to the eighth embodiment, and FIGS. 36A and 36B are a crimping process. FIG. 37 is a partial cross-sectional side view and a partial enlarged cross-sectional side view of the IC chip, the circuit board, and the bonding material, and FIG. 37 shows the flow state of the bonding material in the crimping process. It is a top view which shows the motion of joining material. 38 and 39 are partially enlarged cross-sectional side views of the IC chip, the circuit board, and the bonding material in the crimping step of the IC chip mounting method according to the comparative example for explaining the seventh embodiment.
[0134]
In the eighth embodiment, the adhesion between the bonding material 5 and the substrate 6-8 is improved in the convex portion 355 made of the solder resist or the copper foil of the seventh embodiment. That is, if the convex portion 355 as in the seventh embodiment is configured to have the same configuration as that of the electrode 7, for example, the IC chip 1 and the substrate 6 are bonded by the bonding material 5 as shown in FIGS. The convex portion 355 between the bonding material 5 and the substrate 6 has an Au layer 355a, a Ni layer 355b, and a Cu layer 355c arranged in this order from the bonding material side, and the Cu layer 355c is in contact with the substrate 6. In addition, the adhesion between the bonding material 5 and the Au layer 355a is weak, and there is a possibility that a peeling portion as shown by 395 occurs between them.
[0135]
Therefore, in the eighth embodiment, a mesh electrode 369 is used as an example of a bonding material flow regulating member instead of the convex portion 355. That is, in the IC chip bonding area 6a-8 of the circuit board 6-8 as an example of the circuit forming body, the circuit board 6-8 is bonded to the area where the wiring density is not more than a predetermined value and is eccentric from the center. A mesh electrode 369 is provided as an example of the material flow regulating member. The mesh electrode 369 can be easily bonded to the bonding material 5 by using, for example, a gold electrode as a mesh and an anchor effect of the sealing resin to the bonding material 5.
[0136]
As described above, according to the eighth embodiment, by arranging the mesh-shaped electrode 369, the wiring density of the electrode pattern in the IC chip bonding region 6a-8 of the circuit board 6-8 is made uniform. The flow of the bonding material 5 can be made uniform, and the space between the bonding surface of the square IC chip 1-8 as an example of the electronic component and the IC chip bonding region 6a-8 of the circuit board 6-8 is outside. The amount of protrusion of the protruding bonding material 5 can be made uniform to stabilize the connection. Further, in addition to such effects, the substrate 6-8 is exposed at the through-hole portions 369h,..., 369h constituting the mesh of the mesh electrode 369, and the bonding material 5 disposed on the mesh electrode 369 is provided. The through holes 369h,..., 369h are directly contacted with the substrate 6-8. As a result, the bonding material 5 is directly and closely bonded to the substrate 6-8 at the through-hole portions 369h,..., 369h of the mesh electrode 369, and the adhesion between the bonding material 5 and the substrate 6-8 is improved. Can do.
[0137]
(Ninth embodiment)
As an example of an electronic component mounting method and an electronic component mounting body manufactured by the electronic component mounting method according to the ninth embodiment of the present invention, an IC chip mounting method and an IC chip mounting body manufactured by the method are shown in FIGS. This will be described with reference to FIG. 40A and 40B are a side view and a plan view of the circuit board before the joining step of the IC chip mounting method according to the ninth embodiment, and FIGS. 41A and 41B are a crimping step. It is a partial cross-section side view and a partially enlarged cross-section side view of the IC chip, the circuit board, and the bonding material.
[0138]
In the ninth embodiment, the adhesion between the bonding material 5 and the convex portion 355 is improved in the convex portion 355 made of the solder resist or the copper foil of the seventh embodiment. That is, after forming the convex portion 355 as in the seventh embodiment, the convex portion 355 is included in the entire area outside and inside the IC chip bonding region 6a-9 of the circuit board 6-9, and each of the electrodes 7 is provided. An organic film 339 as an example of a bonding material flow restricting member is disposed almost entirely except for the region 340 including a bonding portion necessary for bonding to the bump 2, and the flow restriction of the bonding material 5 is performed by the organic film 339. Is to do. Therefore, in the ninth embodiment, both the convex portion 355 and the organic film 339 function as an example of a bonding material flow regulating member.
[0139]
The organic film 339 is similar to the organic film 339 used in the fifth embodiment. For example, electrical contact with other wirings or bumps is prevented to maintain insulation and protect the conductor. It is composed of a solder resist such as polyimide or polybenzoxazole (PBO) that functions as a heat resistant coating. Such an organic film 339 is spin-coated by a thickness of about 3 to 7 μm, for example, and is entirely applied to the IC chip bonding region 6a-9 of the circuit board 6-9 and the outside thereof. Thereafter, as shown in FIG. 40, the region 340 including the joint necessary for joining the bumps 2,..., 2 of the electrodes 7,. The region 340 to be removed may be independent in a strip shape, or may be connected and formed in a frame shape. As a result, the organic film 339 is formed almost entirely on the entire outside and inside of the IC chip bonding region 6a-9 of the circuit board 6-9 including the convex portion 355 except for the bonding portion with each bump 2 of each electrode 7. To form.
[0140]
According to the ninth embodiment, as described above, the joints between the bumps 2 of the electrodes 7 are provided on the outside and inside of the IC chip joint region 6a-9 of the circuit board 6-9 including the protrusions 355. By disposing the organic film 339 substantially over the entire surface except for the above, the bonding surface of the IC chip 1-9 and the IC chip bonding region 6a-9 of the circuit board 6-9 in the crimping step are arranged. When the bonding material 5 flows from the central portion to the peripheral portion of the bonding material 5, the organic film 339 functions as a bonding material flow restricting member, and the bonding material 5 near the side portions of the respective sides of the IC chip 1-9. The flow from the central part to the peripheral part can be made substantially uniform, and the distribution of the bonding material 5 in the bonding surface of the IC chip 1-9 can be made uniform, the adhesion force can be improved, and the bonding and sealing can be performed. Reliability can be increased.
[0141]
(10th Embodiment)
As an example of an electronic component mounting method and an electronic component mounting body manufactured by the electronic component mounting method according to the tenth embodiment of the present invention, an IC chip mounting method and an IC chip mounting body manufactured by the method are shown in FIGS. This will be described with reference to FIG. FIG. 42 is a plan view of the circuit board before the bonding process of the IC chip mounting method according to the tenth embodiment, and FIG. 43 is a partially enlarged view of the IC chip, the circuit board, and the bonding material in the crimping process. It is a cross-sectional side view. FIG. 44 is a plan view of a circuit board before the joining process of the IC chip mounting method according to the conventional example for explaining the tenth embodiment, and FIG. 45 is a plan view of the IC chip and circuit board in the conventional crimping process. It is the partial cross section side view which expanded the joining material partially.
[0142]
In the first embodiment, one or a plurality of dummy electrodes 303 are arranged in the vicinity of each corner portion where the electrodes 7 of the square IC chip 1-10 are not provided. However, as the tenth embodiment, the dummy electrodes 303 are arranged. Instead of this, by arranging the organic film 360 as an example of the bonding material flow regulating member, it is possible to achieve the same operational effects as in the first embodiment.
[0143]
That is, as shown in FIG. 42, a circuit as an example of a circuit forming body that uses a sheet material as an example of the bonding material 5 and corresponds to a bonding surface of a square IC chip 1-10 as an example of an electronic component. An organic film 360 is disposed as an example of a bonding material flow restricting member so as to cover the vicinity of each corner portion where the electrodes 7 of the square IC chip bonding region 6a-10 of the substrate 6-10 are not disposed. The flow of the bonding material 5 is regulated by the film 360.
[0144]
The organic film 360 may be disposed only in the vicinity of each corner portion, or may be disposed in a rectangular frame shape by connecting those disposed in the vicinity of each corner portion.
[0145]
Conventionally, as shown in FIGS. 44 and 45, the bonding material 705 flows at a higher flow rate from the position where the electrode 707 of the IC chip bonding region 706 a of the substrate 706 is missing, that is, from the vicinity of each corner portion, in the IC chip bonding region 706 a. The density of the bonding material 705 decreases as it flows along the substrate to the outside, the resin amount for sealing the side surface of the IC chip 701 becomes insufficient, the fillet for sealing the side surface of the IC chip 701 becomes small, and the IC chip bonding Peeling occurs between the IC chip 701 and the bonding material 705 at the periphery of the region, or peeling occurs between the electrode 707 of the substrate 706 and the bonding material 705.
[0146]
On the other hand, in the tenth embodiment, the organic film 360 is disposed as an example of a bonding material flow restriction member so as to cover the vicinity of each corner portion where the electrodes 7 of the IC chip bonding region 6a-10 are not disposed. Then, the above problem is solved.
[0147]
According to the tenth embodiment, in the square IC chip bonding region 6a-10 of the circuit board 6-10, a row of the electrodes 7 at approximately equal intervals in the vicinity of the sides of the four sides excluding the corners of the four corners. ,..., 7, and the organic film 360 is disposed in a corner portion without the electrode 7 in the vicinity of the side portion of the IC chip bonding region 6 a-10 of the circuit board 6-10. Bonding material from the central portion of the bonding material 5 to the corner portion of the peripheral portion between the bonding region of the IC chip 1-10 and the IC chip bonding region 6a-10 of the circuit board 6-10 in the crimping step 5, the organic film 360 functions as a bonding material flow regulating member even in the corner portion where the electrode 7 is not present, and the flow rate SP1 at the center of the IC chip bonding region 6a-10 of the substrate 6-10 and the substrate 6 -10 The flow velocity SP2 in the peripheral part of the IC chip bonding region 6a-10 is substantially the same, and the central part of the bonding material 5 in the vicinity of each side of the IC chip bonding region 6a-10 and in the vicinity of each corner part. Distribution of the bonding material 5 in the IC chip bonding area 6a-10 of the circuit board 6-10, in other words, the bonding surface of the IC chip 1-10. In addition, the fillet 5A covering the side surface of the IC chip 1-10 can be formed by blocking up the flow of the bonding material 5 along the surface of the circuit board by the organic film 360 at each corner. . As described above, the distribution of the bonding material 5 can be made uniform in the bonding surface of the IC chip 1-10 and in the IC chip bonding region 6a-10 of the circuit board 6-10. In addition to increasing the adhesion between the IC chip 1-10 and the bonding material 5 at the central portion and the peripheral portion of the IC chip bonding region 6a-10, particularly the corner portion, and the substrate 6-10. By increasing the adhesion between the electrode 7 or the organic film 360 and the bonding material 5, the peeling can be prevented and the reliability of bonding and sealing can be improved.
[0148]
In the first to tenth embodiments described above, the bumps 2 are leveled in advance and aligned with the height, and then brought into contact with the electrodes 7 of the circuit board. In addition, the bumps 2 are not leveled in advance. It is also possible to employ a so-called non-stud bump (NSD) type mounting method in which leveling is performed on each electrode 7 by bringing the electrode into contact with each electrode 7 on the circuit board. The non-stud bump (NSD) type mounting method will be described below.
[0149]
A mounting method of an IC chip (typically denoted by 401 below) on a circuit board (hereinafter typically denoted by 406) in each of the above embodiments is shown in FIGS. I will explain.
[0150]
In the IC chip 401 of FIG. 48 (A), bumps (FIG. 47 (A) to FIG. 47 (F)) are applied to the Al pad electrode of the IC chip 401 (represented by reference numeral 404 in the following) by the wire bonding apparatus. (Projection electrode) (in the following, typically indicated by 402). That is, a ball 196 is formed at the lower end of the wire 195 protruding from the holder 193 in FIG. 47A, the holder 193 holding the wire 195 is lowered in FIG. 47B, and the ball 193 is moved to the electrode 404 of the IC chip 401. To form the shape of the bump 402, and in FIG. 47C, the holder 193 starts to rise while feeding the wire 195 downward, and the holder 193 is attached to the substantially rectangular loop 199 as shown in FIG. The curved portion 198 is formed on the upper portion of the bump 402 as shown in FIG. 47E by moving 193, and the bump 402 as shown in FIG. 47F is formed by tearing. Alternatively, the wire 195 is clamped by the holder 193 in FIG. 47B, the holder 193 is lifted and pulled upward to tear the gold wire 195, and the shape of the bump 402 as shown in FIG. You may make it form. FIG. 48B shows a state in which the bump 402 is formed on each electrode 404 of the IC chip 401 as described above. As an example, the dummy bumps are formed in the same manner as the bumps 402.
[0151]
Next, heat as an example of a bonding material cut on the electrode 407 of the circuit board 406 shown in FIG. 48C to a size slightly larger than the size of the IC chip 401 as shown in FIG. 48D. For example, 49 to 98 N (5 to 10 kgf / cm) is provided by a pasting tool 408A, for example, by placing a curable resin sheet (typically indicated by 405 below) and heated to 80 to 120 ° C.2) A thermosetting resin sheet 405 as a specific example of the bonding material is attached on the electrode 407 of the substrate 406 with a pressure of a certain degree. Then, the preparation process of the board | substrate 406 is completed by peeling the separator 405a arrange | positioned so that removal to the tool 408A side of the thermosetting resin sheet 405 is carried out. The separator 405a is for preventing the thermosetting resin sheet 405 from sticking to the tool 408A. Here, the thermosetting resin sheet 405 includes those containing an inorganic filler such as silica (for example, epoxy resin, phenol resin, polyimide, etc.), and those not containing any inorganic filler (for example, epoxy resin, phenol resin). , Polyimide, etc.) are preferable, and it is preferable to have heat resistance enough to withstand a high temperature in a subsequent reflow process (for example, heat resistance enough to withstand 240 ° C. for 10 seconds).
[0152]
Next, as shown in FIGS. 48E and 49F, the IC chip 401 in which the bump 402 is formed on the electrode 404 in the previous process is heated in the previous process by the heated bonding tool 408. The prepared substrate 406 is pressed after positioning on the electrode 407 corresponding to the electrode 404 of the IC chip 401. At this time, the bump 402 is pressed while its head portion 402a is deformed on the electrode 407 of the substrate 406 as shown in FIGS. 51 (A) to 51 (B). At this time, the IC chip 401 is interposed. The load applied to the bump 402 varies depending on the diameter of the bump 402, but a load is applied so that the head 402a of the bump 402 that is bent and overlapped is deformed as shown in FIG. 51C. It is necessary. This load requires a minimum of 196 mN (20 gf). The upper limit of the load is such that the IC chip 401, the bump 402, the circuit board 406, and the like are not damaged. In some cases, the maximum load may exceed 980 mN (100 gf). Reference numerals 405 m and 405 s denote a thermosetting resin during melting in which the thermosetting resin sheet 405 is melted by the heat of the joining tool 408 and a resin that is thermoset after melting.
[0153]
Note that the IC chip 401 in which the bump 402 is formed on the electrode 404 in the previous step is bonded to the substrate 406 prepared in the previous step by a bonding tool 408 heated by a built-in heater such as a ceramic heater or a pulse heater. The positioning step of positioning on the electrode 407 corresponding to the electrode 404 of the IC chip 401 and the step of pressing and bonding after positioning may be performed by one positioning and pressing bonding device. However, in order to improve productivity by performing positioning work and press bonding work simultaneously in separate devices, for example, when a large number of substrates are continuously produced, the positioning process is performed by a positioning device, and the press bonding process is performed You may make it carry out with a joining apparatus.
[0154]
At this time, as an example, a glass cloth laminated epoxy substrate (glass epoxy substrate), a glass cloth laminated polyimide resin substrate, or the like is used as the circuit board 406. Since these substrates 406 are warped or wavy due to thermal history, cutting, or processing, and are not necessarily completely flat, the circuit substrate 406 is appropriately warped, for example, at 140 to 230 ° C. Heat is applied to the thermosetting resin sheet 405 between the IC chip 401 and the circuit board 406, for example, for several seconds to 20 seconds, and the thermosetting resin sheet 405 is cured. At this time, first, the thermosetting resin constituting the thermosetting resin sheet 405 flows to seal the edge of the IC chip 401. Further, since it is a resin, when it is heated, it initially softens spontaneously and thus has a fluidity that flows to the edge. By making the volume of the thermosetting resin larger than the volume of the space between the IC chip 401 and the circuit board, the thermosetting resin can flow out of the space and have a sealing effect. At this time, flow restriction is appropriately performed by the bonding material flow restriction member of each embodiment described above.
[0155]
Thereafter, when the heated tool 408 is raised, the temperature of the IC chip 401 and the thermosetting resin sheet 405 is drastically lowered because there is no heating source, and the thermosetting resin sheet 405 loses fluidity, As shown in FIGS. 49G and 51C, the IC chip 401 is fixed on the circuit board 406 with a cured thermosetting resin 405s. Further, when the circuit board 406 side is heated by the stage 410, the temperature of the bonding tool 408 can be set lower.
[0156]
Further, instead of attaching the thermosetting resin sheet 405, as shown in FIG. 50H, the thermosetting adhesive 405b is applied on the circuit board 406 by dispensing, printing, or transferring. Also good. When using the thermosetting adhesive 405b, the same process as the process using the thermosetting resin sheet 405 described above is basically performed. When the thermosetting resin sheet 405 is used, there are advantages that it is easy to handle because it is solid, and can be formed of a polymer because there is no liquid component, and can easily form a material having a high glass transition point. On the other hand, when the thermosetting adhesive 405b is used, it can be applied, printed, or transferred to an arbitrary position on the substrate 406 in an arbitrary size.
[0157]
Further, an anisotropic conductive film (ACF) may be used in place of the thermosetting resin, and further, by using a nickel-plated nickel powder as the conductive particles contained in the anisotropic conductive film, It is more preferable that the connection resistance value between the electrode 407 and the bump 402 can be lowered.
[0158]
48A to 48G illustrate the formation of the thermosetting resin sheet 405 on the circuit board 406 side, and FIG. 50H illustrates the thermosetting adhesive 405b. Although the formation on the 406 side has been described, the present invention is not limited to this, and it may be formed on the IC chip 401 side as shown in FIG. 50I or 50J. In this case, particularly in the case of the thermosetting resin sheet 405, the IC chip 401 is pressed against an elastic body 117 such as rubber together with a separator 405a that is detachably disposed on the circuit board side of the thermosetting resin sheet 405. A thermosetting resin sheet 405 may be attached to the IC chip 401 along the shape of the bump 402.
[0159]
In such a non-stud bump (NSD) type mounting method, the tip portion of each bump is crushed on each electrode of the circuit board, so that the amount of pressing (pressing amount) of the IC chip against the circuit board increases. Then, the force to flow the bonding material to the peripheral portion side of the bonding surface of the IC chip becomes large, and the flow restriction function of the bonding material by the bonding material flow restriction member such as the dummy bump, the convex portion, or the organic film is more effective. With NSB (non-stud bump), the regulation effect becomes larger.
[0160]
As an example, in a non-stud bump (NSD) type mounting method, for example, when bumps having a diameter of 75 μm are pressed against a circuit board electrode and crushed to obtain an electrical connection, the bumps are shortened by 35 μm in height. I'm trying to crush. At this time, when the IC chip is pressed against the circuit board, the bonding material is greatly pushed out from between the two, so that the bonding material flow restricting member regulates and regulates the outflow of the bonding material, so that the center portion of the IC chip The decrease in the density of the bonding material can be effectively prevented. Therefore, such a non-stud bump type mounting method can be expected to have a large suppression force against the outflow of the bonding material.
[0161]
In the second embodiment, the shapes of the bumps 2 and the dummy bumps 3 are preferably substantially the same in order to perform the flow regulation of the bonding material substantially uniformly. However, the present invention is not limited to this and is allowed. Different shapes and heights may be used within a certain range. The material of the bump and the dummy bump may be different.
[0162]
In the second embodiment, the description has been made centering on the case where the distance between the bump 2 and the bump 2, or the distance between the bump 2 and the dummy bump 3, and the distance between the dummy bump 3 and the dummy bump 3 are substantially uniform. The intervals may be non-uniform within an allowable range. In this case, the dummy bumps 3 are disposed outside the allowable range.
[0163]
In the first and second embodiments, it is preferable that the shape of the electrode 72 and the dummy electrode 303 or 313 is substantially the same in order to perform the flow regulation of the bonding material substantially uniformly, but the shape is not limited thereto. The shape and height may be different within the allowable range. The material of the electrode 7 and the dummy electrode 303 or 313 may be different.
[0164]
In the first and second embodiments, the distance between the electrode 7 and the electrode 7, or the distance between the electrode 7 and the dummy electrode 303 or 313, and the distance between the dummy electrode 303 or 313 and the dummy electrode 303 or 313 are substantially uniform. Although a description has been given centering on a certain case, the present invention is not limited to this, and the intervals may be non-uniform within an allowable range. In this case, the dummy electrode 303 or 313 is disposed outside the allowable range.
[0165]
In the second embodiment, the example in which the dummy bump 3 is formed on the electrode 4 of the IC chip as the bonding material flow regulating member has been described. However, the present invention is not limited to this, and as shown in FIG. Alternatively, a dummy bump-like protrusion 23A having a height substantially equal to the dummy bump may be directly formed on the IC chip by printing or dispensing with a resin paste.
[0166]
In addition, the bump 2 is formed on the electrode 4 on the bonding surface of the electronic component. Instead of the bump 2, a convex electrode protruding on the electrode 4 is formed on the bonding surface of the electronic component. It may be.
[0167]
In each of the above embodiments, the bonding material 5 that protrudes between the IC chip and the circuit board is subjected to flow restriction by the bonding material flow restriction member, and the fillet 5A that is a raised portion with respect to the side surface of the IC chip is enlarged. In this case, the side surface of the IC chip can be raised so as to cover about half of the thickness from the circuit board side. In other words, conventionally, the flow restriction is applied to the portion where the bump or the passivation film is disposed, but such restriction is not applied to the portion where the bump or the passivation film is not disposed, so that the fillet cannot be increased. For example, when the thickness of the IC chip is 0.4 mm, the fillet can be formed only about 0.1 mm. However, in each of the above embodiments, since the bonding material 5 is restricted in flow as described above, for example, when the thickness of the IC chip is 0.4 mm, the fillet is formed to a height of 0.2 to 0.3 mm. Therefore, the fillet 5A can be enlarged. As a result, when the fillet is small, a moisture intrusion path is likely to be formed at the interface between the IC chip and the bonding material or the substrate and the bonding material, and the path is short, resulting in poor moisture resistance reliability. And it was weak against the warpage of the substrate during the heat cycle. However, as the fillet 5A becomes larger, it becomes difficult to form a moisture intrusion path at the interface between the IC chip and the bonding material 5 or between the circuit board and the bonding material 5, and the path can be lengthened. It becomes excellent in reliability and strong against warping of the substrate due to heat during a heat cycle of, for example, -65 ° C to 150 ° C.
[0168]
Of the embodiments described above, even in the embodiment in which no dummy bumps are arranged, if the dummy bumps are arranged, the flow of the bonding resin can be made uniform over the entire surface of the IC chip.
[0169]
It is to be noted that, by appropriately combining arbitrary embodiments of the various embodiments described above, the effects possessed by them can be produced.
[0170]
【The invention's effect】
According to the present invention, an electronic component such as a square, that is, a square or rectangular IC chip is pressed against a circuit forming body such as a circuit board by a pressing force, and the two are bonded via the bonding material. Since the bonding material flow restricting member is disposed in the portion flowing out into the circuit, when the electronic component is bonded to the circuit forming body, the flow of the bonding material between the two is restricted by the bonding material flow restricting member. Thus, the flow of the bonding material from the central part to the peripheral part of the electronic component bonding region can be substantially uniformed, and the distribution of the bonding material in the electronic component bonding region can be made uniform, thereby improving the adhesion. In addition, the reliability of bonding and sealing can be improved.
[0171]
More specifically, according to one aspect of the present invention, the electronic component bonding region of the circuit forming body is a quadrangle, and each of two opposing sides of the quadrangular electronic component bonding region is the above. When a plurality of bumps are formed, a convex portion that is provided at a corner portion of the electronic component bonding region of the circuit formed body corresponding to a corner portion without a bump and does not require electrical bonding is formed. When the portion is a dummy electrode, the arrangement state of the electrodes can be made substantially the same in the vicinity of each side of each side of the electronic component and in the vicinity of each corner portion, whereas when the convex portion is an organic film, The convex part of the organic film which replaces an electrode can be arrange | positioned in the side part vicinity of each edge | side, and each corner part vicinity. As a result, when the bonding material flows from the central portion of the bonding material to the corner portion of the peripheral portion between the bonding region of the electronic component and the electronic component bonding region of the circuit forming body in the crimping step, the convex portion Functions as a bonding material flow regulating member, and the flow rate at the center of the electronic component bonding region of the circuit formed body and the flow rate at the peripheral portion of the electronic component bonding region of the circuit formed body are substantially the same, The flow of the bonding material from the central part to the peripheral corners in the vicinity of the sides and the corners of each side of the component bonding region is substantially uniformed, and in other words, the bonding surface of the electronic component is the circuit described above. The distribution of the bonding material in the electronic component bonding region of the formed body can be made uniform. As described above, it is possible to prevent the decrease in the density of the bonding material as a result of the uniform distribution of the bonding material in the bonding surface of the electronic component and in the electronic component bonding region of the circuit forming body. Increases the adhesion between the electronic component and the bonding material at the central part and the peripheral part of the region, particularly at the corner, and also increases the adhesion between the electrode of the circuit forming body or the convex part and the bonding material. Accordingly, the peeling can be prevented and the reliability of bonding and sealing can be improved.
[0172]
Further, according to another aspect of the present invention, on the joint surface of a quadrilateral, that is, a square or rectangular electronic component, a row of bumps is formed at approximately equal intervals in the vicinity of the sides of each of the four sides excluding the corners of the four corners. A dummy bump is formed in the vicinity of the side of the side of the bonding surface of the electronic component, and a dummy bump is formed, and the electrode near the side of the side of the electronic component bonding region of the circuit forming body is formed. When the dummy electrode is formed in a non-existing place, the arrangement state of the bumps can be made substantially the same in the vicinity of the side of each side of the electronic component, and the arrangement state of the electrode can be changed in each electronic component joining region of the circuit forming body. The vicinity of the side of the side can be substantially the same, and from the central part to the peripheral part of the bonding material between the bonding surface of the electronic component and the electronic component bonding region of the circuit forming body in the crimping step Of joining material to When moving, the dummy bump and the dummy electrode function as a bonding material flow restricting member, and from the central portion of the bonding material in the vicinity of each side of the electronic component and in the vicinity of each side of the electronic component bonding region of the circuit forming body. The flow to the peripheral part is substantially uniform, and the distribution of the bonding material in the bonding surface of the electronic component and the electronic component bonding region of the circuit formed body can be made uniform, improving the adhesion, The reliability of sealing can be improved. In addition, it is possible to prevent a decrease in the density of the bonding material as a result of the uniform distribution of the bonding material in the bonding surface of the electronic component and in the electronic component bonding region of the circuit formed body. A sufficient amount of bonding material for sealing is supplied, and the fillet for sealing the side surface of the electronic component can be enlarged, so that the electronic component and the bonding material at the periphery of the electronic component bonding region Peeling and peeling between the electrode of the circuit forming body and the bonding material can be effectively prevented.
[0173]
According to another aspect of the present invention, in the case where an organic film is disposed outside the electronic component bonding region of the circuit formed body and around the electronic component bonding region, the organic film is a bonding material flow regulating member. As an example of the bonding material flow restriction film, flow restriction of the bonding material can be performed. As a result, compared with the case where there is no organic film, from the central part to the peripheral part of the bonding material between the bonding surface of the electronic component and the electronic component bonding region of the circuit forming body in the crimping step. When the bonding material flows, the organic film functions as a bonding material flow regulating member to reduce the flow rate between the electronic component and the circuit forming body, and the flow of the bonding material from the central portion to the peripheral portion The distribution of the bonding material within the bonding surface of the electronic component can be made uniform, the adhesion can be improved, and the reliability of bonding and sealing can be improved.
[0174]
According to another aspect of the present invention, the electronic component bonding region of the circuit forming body is a quadrangle, and the plurality of electrodes in a row are arranged in the center of the rectangular electronic component bonding region. When the component is supported at one point in the short direction, that is, in the width direction with respect to the circuit forming body, and the organic film is disposed on both sides of the circuit formed body, the organic film is not formed on both sides of the bump row. The flow rate between the electronic component and the circuit forming body can be reduced, and the bonding surface of the electronic component and the electronic component bonding region of the circuit forming body in the crimping step can be reduced. The organic film functions as a bonding material flow regulating member during the flow of the bonding material from the central portion to the peripheral portion of the bonding material, substantially equalizes the flow of the bonding material from the central portion to the peripheral portion, and an electronic component. Of bonding material in the joint surface Hakare is uniform, improved adhesion is able to improve the reliability of the bonding and sealing.
[0175]
Further, according to another aspect of the present invention, an example of a bonding material flow regulating member is formed almost entirely on the outside and inside of the electronic component bonding region of the circuit formed body, except for the bonding portion with the bump of the electrode. When the organic film is disposed as a bonding material, the bonding material from the central part to the peripheral part of the bonding material between the bonding surface of the electronic component and the electronic component bonding region of the circuit forming body in the crimping step The organic film functions as a bonding material flow restricting member at the time of flow of the electronic component, and the flow of the bonding material from the central part to the peripheral part in the vicinity of the side part of each side of the electronic component is substantially uniform, and the electronic component The distribution of the bonding material within the bonding surface can be made uniform, the adhesion force can be improved, and the reliability of bonding and sealing can be improved.
[0176]
Further, according to another aspect of the present invention, the convex material for forming the fillet is placed in a rectangular frame-like region surrounding the electronic component bonding region at a predetermined interval from the electronic component bonding region of the circuit formed body. When arranged as an example of a member, the bonding material to the outside of the electronic component bonding region of the bonding material between the bonding surface of the electronic component and the electronic component bonding region of the circuit forming body in the crimping step During the flow, the bonding material that has been pushed out and flows out along the surface of the circuit board is dammed and raised by the projecting portion for forming the fillet, and a large fillet can be formed on the side surface of the electronic component. The side sealing force can be improved, the adhesion force is improved, and the reliability of bonding and sealing can be increased.
[0177]
According to another aspect of the present invention, the bonding material exhibits a non-uniform flow in the electronic component bonding region of the circuit formed body, for example, the electrode wiring density in the electronic component bonding region is a predetermined value or less. If a convex portion as a bonding material flow restricting member having a thickness substantially the same as the thickness of the electrode of the circuit forming body is provided in the region that is eccentric from the center, the pattern wiring in the electronic component bonding region of the circuit forming body The density can be made uniform, the flow of the bonding material can be made uniform, and the amount of the bonding material that protrudes from the outside between the electronic component and the circuit forming body can be made uniform to stabilize the bonding. be able to. Further, in the case where the fillet forming convex portion is composed of one or more layers and is formed of a solder resist, the adhesion with the resin forming the fillet is high, and the sealing force is further improved.
[0178]
According to another aspect of the present invention, when a mesh electrode or an electrode having a through hole is disposed as the convex portion, the wiring density of the electrode pattern in the electronic component bonding region of the circuit forming body is reduced. It is possible to make the flow of the bonding material uniform, and the bonding material that protrudes outward from between the bonding surface of the square electronic component as an example of the electronic component and the electronic component bonding region of the circuit forming body can be achieved. The amount of protrusion can be made uniform to stabilize the connection. Further, in addition to such an effect, the circuit forming body is exposed in the through hole portion or the through hole constituting the mesh of the electrode, and the bonding material disposed on the electrode has the through hole portion or the through hole. It will penetrate and come into direct contact with the circuit formation. As a result, the bonding material directly adheres to the circuit forming body at the through hole portion of the electrode or the through hole, and the adhesion between the bonding material and the circuit forming body can be improved.
[0179]
Further, according to another aspect of the present invention, the organic film is formed almost entirely on the outside and inside of the electronic component bonding region of the circuit forming body including the convex portion except for the bonding portion with each bump of each electrode. When the bonding material flows from the central part to the peripheral part of the bonding material between the bonding surface of the electronic component and the electronic component bonding region of the circuit forming body in the crimping step. The film functions as a bonding material flow restricting member, and the flow of the bonding material from the central portion to the peripheral portion in the vicinity of each side of the electronic component is substantially uniform, and within the bonding surface of the electronic component The distribution of the bonding material can be made uniform, the adhesion can be improved, and the reliability of bonding and sealing can be improved.
[0180]
Further, according to another aspect of the present invention, in the square electronic component joining region of the circuit formed body, there is one row of electrodes at approximately equal intervals in the vicinity of the sides of the four sides excluding the corners of the four corners. In the case where an organic film is disposed in a corner portion without an electrode near the side of the side of the electronic component bonding region of the circuit formed body, the bonding region of the electronic component in the crimping step and the above When the bonding material flows from the central part of the bonding material to the peripheral part of the peripheral part between the electronic component bonding region of the circuit formation body, the organic film functions as a bonding material flow regulating member even in the corner part where there is no electrode. The flow rate at the center of the electronic component bonding region of the circuit formed body and the flow rate at the periphery of the electronic component bonding region of the circuit formed body are substantially the same, and the sides of each side of the electronic component bonded region Above and near each corner The flow of the bonding material from the central portion to the peripheral corner portion is substantially uniform, and the bonding surface of the electronic component, in other words, the distribution of the bonding material in the electronic component bonding region of the circuit forming body is made uniform. In addition, the fillet covering the side surface of the electronic component can be formed by blocking and increasing the flow of the bonding material along the circuit board surface with an organic film at each corner. As described above, it is possible to prevent the decrease in the density of the bonding material as a result of the uniform distribution of the bonding material in the bonding surface of the electronic component and in the electronic component bonding region of the circuit forming body. To increase the adhesion between the electronic component and the bonding material at the central part and the peripheral part of the region, especially the corner, and the adhesion between the electrode or organic film of the circuit forming body and the bonding material. Thus, the peeling can be prevented and the reliability of bonding and sealing can be improved.
[0181]
In addition, in the electronic component mounting body manufactured by the method according to each aspect described above or the electronic component mounting body including the bonding material flow restriction member as described in each aspect above, the bonding material flow restriction member causes no bonding material. In a state where the uniform flow is regulated and the distribution of the bonding material in the electronic component bonding region is uniform, the electronic component and the circuit forming body are closely bonded and sealed by the bonding material. The reliability of joining and sealing can be made high, and the quality becomes high.
[Brief description of the drawings]
FIGS. 1A and 1B are a side view and a plan view, respectively, of a circuit board before a bonding step of an IC chip mounting method according to a first embodiment of the present invention.
FIGS. 2A and 2B are partial cross-sectional side views of an IC chip, a circuit board, and a bonding material in a crimping process of the IC chip mounting method according to the first embodiment, respectively, and a perspective view of the IC chip; It is a top view which shows the motion of the joining material on a circuit board.
FIG. 3 is a partial cross-sectional side view in which an IC chip, a circuit board, and a bonding material are partially enlarged in a crimping process of the IC chip mounting method according to the first embodiment.
FIGS. 4A and 4B are a side view and a plan view, respectively, of the circuit board before the bonding step of the IC chip mounting method according to the conventional example for explaining the first embodiment. FIGS.
FIGS. 5A and 5B are perspective views of a partial cross-sectional side view of an IC chip, a circuit board, and a bonding material, respectively, in a pressure-bonding step of an IC chip mounting method according to a conventional example following FIG. FIG. 5 is a plan view showing the movement of the bonding material on the circuit board.
6 is a partial cross-sectional side view in which the IC chip, the circuit board, and the bonding material are partially enlarged in the crimping process of the IC chip mounting method according to the conventional example following FIG. 5;
FIGS. 7A and 7B are a side view and a plan view, respectively, of an IC chip before a bonding step of an IC chip mounting method according to a second embodiment of the present invention.
FIGS. 8A and 8B are a side view of a circuit board before the bonding step of the IC chip mounting method according to the second embodiment and a flow state of the bonding material in the pressure bonding step, respectively. It is a top view which shows the movement of the joining material on a circuit board seeing through.
FIG. 9 is a partial cross-sectional side view in which an IC chip, a circuit board, and a bonding material are partially enlarged in a crimping process of the IC chip mounting method according to the second embodiment.
FIGS. 10A and 10B are a side view and a back view of an IC chip before a joining step of a mounting method of an electronic component according to a conventional example for explaining the second embodiment.
11A is a side view of the circuit board before the joining process of the electronic component mounting method according to the conventional example following FIG. 10, and FIG. 11B is a joining material in the crimping process of the conventional example of FIG. FIG. 6 is a plan view showing the flow state of the bonding material on the circuit board through the IC chip.
FIG. 12 is a partial cross-sectional side view in which the IC chip, the circuit board, and the bonding material are partially enlarged in the crimping step of the electronic component mounting method according to the conventional example following FIG. 11;
FIGS. 13A and 13B are a side view and a plan view of the circuit board before the bonding step of the IC chip mounting method according to the third embodiment of the present invention, and FIG. It is a partial cross section side view of IC chip in FIG.
FIG. 14 is a partially enlarged cross-sectional side view of an IC chip, a circuit board, and a bonding material in the bonding step of the IC chip mounting method according to the third embodiment.
FIGS. 15A and 15B are a side view and a plan view, respectively, of the circuit board before the joining step of the electronic component mounting method according to the conventional example for explaining the third embodiment; C) is a partial cross-sectional side view of the IC chip, the circuit board, and the bonding material in the crimping process of the conventional example.
16 is a partial cross-sectional side view in which an IC chip, a circuit board, and a bonding material are partially enlarged in the crimping process of the conventional example of FIG.
FIGS. 17A and 17B are a side view and a back view, respectively, of the IC chip before the joining step of the IC chip mounting method according to the fourth embodiment of the present invention.
FIG. 18 is a plan view showing a flow state of the bonding material in the crimping step of the IC chip mounting method according to the fourth embodiment, and showing the movement of the bonding material on the circuit board through the IC chip. .
FIG. 19 is a partial cross-sectional side view of an IC chip, a circuit board, and a bonding material in a crimping process of the IC chip mounting method according to the fourth embodiment.
FIGS. 20A and 20B are a side view and a back view of the IC chip before the joining step of the IC chip mounting method according to the conventional example for explaining the fourth embodiment.
FIG. 21 is a plan view showing the flow state of the bonding material in the crimping process of the conventional example of FIG. 20 and showing the movement of the bonding material on the circuit board through the IC chip.
22 is a partial cross-sectional side view of an IC chip, a circuit board, and a bonding material in the crimping process of the conventional example of FIG.
FIGS. 23A and 23B are a side view and a back view, respectively, of the IC chip before the bonding step of the IC chip mounting method according to the fifth embodiment of the present invention.
FIG. 24 is a plan view showing a flow state of the bonding material in the crimping step of the IC chip mounting method according to the fifth embodiment, and showing the movement of the bonding material on the circuit board through the IC chip. .
FIGS. 25A and 25B are a side view and a back view of the IC chip before the joining step of the IC chip mounting method according to the conventional example for explaining the fifth embodiment, respectively. FIGS.
FIG. 26 is a plan view showing the flow state of the bonding material in the crimping process of the conventional example of FIG. 25 and showing the movement of the bonding material on the circuit board through the IC chip.
FIGS. 27A and 27B are a side view and a plan view, respectively, of a circuit board before the joining step of the IC chip mounting method according to the sixth embodiment of the present invention, and FIG. 27C is a crimping step; It is the partial cross section side view of the IC chip, the circuit board, and the bonding material of FIG.
FIG. 28 is a partial cross-sectional side view in which the IC chip, the circuit board, and the bonding material are partially enlarged in the crimping process of the IC chip mounting method according to the sixth embodiment.
FIGS. 29A and 29B are a side view and a plan view, respectively, of the circuit board before the joining step of the IC chip mounting method according to the conventional example for explaining the sixth embodiment; ) Is a partial cross-sectional side view of the IC chip, the circuit board, and the bonding material in the above-described conventional crimping process.
30 is a partial cross-sectional side view in which the IC chip, the circuit board, and the bonding material are partially enlarged in the crimping process of the conventional example of FIG. 29;
FIGS. 31A and 31B are a side view and a plan view, respectively, of a circuit board before a joining step of an IC chip mounting method according to a seventh embodiment of the present invention, and FIG. 4 is a partial cross-sectional side view of the IC chip, the circuit board, and the bonding material.
FIG. 32 is a plan view showing a flow state of the bonding material in the crimping process and showing the movement of the bonding material on the circuit board through the IC chip.
33 (A) and 33 (B) are a side view and a plan view of a circuit board before the joining step of the IC chip mounting method according to the conventional example for explaining the seventh embodiment, and FIG. 33 (C). 4 is a partial cross-sectional side view of an IC chip, a circuit board, and a bonding material in a crimping process.
34 is a plan view showing a flow state of the bonding material in the crimping process of the conventional example of FIG. 33 and showing the movement of the bonding material on the circuit board through the IC chip.
FIGS. 35A and 35B are a side view and a plan view, respectively, of a circuit board before a bonding step of an IC chip mounting method according to an eighth embodiment of the present invention.
FIGS. 36A and 36B are a partial cross-sectional side view and a partially enlarged cross-sectional side view of an IC chip, a circuit board, and a bonding material, respectively, in a pressure-bonding step of the IC chip mounting method according to the eighth embodiment. is there.
FIG. 37 is a plan view showing the flow state of the bonding material in the crimping process and showing the movement of the bonding material on the circuit board through the IC chip.
FIG. 38 is a partially enlarged cross-sectional side view of an IC chip, a circuit board, and a bonding material in a crimping process of an IC chip mounting method according to a comparative example for explaining the seventh embodiment.
FIG. 39 is a partially enlarged cross-sectional side view of an IC chip, a circuit board, and a bonding material in a crimping process of an IC chip mounting method according to a comparative example for explaining the seventh embodiment.
FIGS. 40A and 40B are a side view and a plan view, respectively, of a circuit board before a bonding step of an IC chip mounting method according to a ninth embodiment of the present invention.
FIGS. 41A and 41B are a partial cross-sectional side view and a partial enlarged cross-sectional side view of an IC chip, a circuit board, and a bonding material, respectively, in a pressure-bonding step of the IC chip mounting method according to the ninth embodiment. is there.
FIG. 42 is a plan view of a circuit board before a bonding step in the IC chip mounting method according to the tenth embodiment of the present invention;
FIG. 43 is a partial cross-sectional side view in which the IC chip, the circuit board, and the bonding material are partially enlarged in the crimping process of the IC chip mounting method according to the tenth embodiment.
FIG. 44 is a plan view of a circuit board before a bonding step in an IC chip mounting method according to a conventional example for explaining the tenth embodiment;
45 is a partial cross-sectional side view in which the IC chip, the circuit board, and the bonding material are partially enlarged in the crimping process of the conventional example of FIG. 44;
FIG. 46 is an explanatory diagram for explaining the placement location of the dummy bumps in the embodiment.
47 (A), (B), (C), (D), (E), (F), and (G) are bumps of an IC chip using a wire bonder in the mounting method in the above embodiment, respectively. It is explanatory drawing which shows a formation process.
48 (A), (B), (C), (D), and (E) each specify a non-stud bump (NSD) type mounting method as an example of an IC chip mounting method in the above embodiment. It is explanatory drawing which shows a case.
FIGS. 49 (F) and 49 (G) are explanatory views showing a method of mounting an IC chip in the embodiment following FIG. 27, respectively.
50 (H), (I), and (J) are explanatory views showing a method of mounting an IC chip in the embodiment that follows FIG. 28, respectively.
FIGS. 51A, 51B, and 51C are explanatory views showing a bonding process of a circuit board and an IC chip in the mounting method according to the embodiment.
52A and 52B are a side view and a plan view, respectively, of an IC chip before a bonding step of an IC chip mounting method according to a modification of the second embodiment of the present invention.
[Explanation of symbols]
1, 1-1, 1-2, 1-3, 1-4, 1-5, 1-6, 1-7, 1-8, 1-9, 1-10... IC chip, 2. ... Dummy bumps, 4 ... IC chip electrodes, 5 ... Joint materials, 6,6-1,6-2,6-3,6-4,6-5,6-6,6-7,6-8,6 -9, 6-10... Circuit board, 6a-1, 6a-2, 6a-3, 6a-4, 6a-5, 6a-6, 6a-7, 6a-8, 6a-9, 6a-10. IC chip bonding area of circuit board, 7 ... Electrode of circuit board, 8 ... Press member, 10 ... Base, 23A ... Dummy bump-shaped protrusion, 303, 313 ... Dummy electrode, 309 ... Passivation film, 319, 329, 339 , 356, 360 ... organic film, 320 ... square frame region, 340 ... region including the joint necessary for joining, 345 ... dam part, 348 ... organic on the upper side , 349 ... lower organic layer, 355 ... protrusion, 369 ... mesh electrode, 395 ... peeling portion.

Claims (35)

少なくとも樹脂を含む接合材料（５）を回路形成体（６）又は電子部品（１）に供給する工程と、
上記電子部品の接合面の複数の凸状電極（４，２）と上記回路形成体の四角形の電子部品接合領域の電極（７）とが電気的に接触可能なように上記接合材料を介して上記電子部品と上記回路形成体とを位置決めする位置決め工程と、
加熱及び加圧で上記電子部品を熱圧着して、上記電子部品の上記凸状電極と上記回路形成体の上記電極とが電気的に接触した状態で上記電子部品の上記接合面と上記回路形成体との間の上記接合材料を硬化させる本圧着工程とを備え、
上記本圧着工程において、上記回路形成体の上記電子部品接合領域で上記接合材料が不均一に流出する部分であってかつ上記回路形成体の上記四角形の電子部品接合領域の一列に配列された隣接電極間の間隔が他の隣接電極間の間隔より大きい広幅間隔部分に備えられることにより上記隣接電極と大略等間隔に配置されかつ上記電極と形状が大略同一でありかつ電気的接合を必要としない凸部（３１３）である接合材料流動規制部材（３０３，３１３，３１９，３２９，３３９，３５５，３６９，３６０）により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制することにより上記電子部品接合領域の全体において上記接合材料が大略均一に分布保持されるようにしたことを特徴とする電子部品の実装方法。Supplying a bonding material (5) containing at least a resin to the circuit forming body (6) or the electronic component (1);
The plurality of convex electrodes (4, 2) on the bonding surface of the electronic component and the electrode (7) of the quadrangular electronic component bonding region of the circuit forming body are placed via the bonding material so as to be in electrical contact. A positioning step of positioning the electronic component and the circuit formed body;
The electronic component is thermocompression-bonded by heating and pressurization, and the joint surface of the electronic component and the circuit are formed in a state where the convex electrode of the electronic component and the electrode of the circuit forming body are in electrical contact with each other. A main pressure bonding step for curing the bonding material between the body and the body,
In the main crimping step, the bonding material flows out unevenly in the electronic component bonding region of the circuit formed body and adjacent to the circuit formed body arranged in a row of the square electronic component bonding region. Since the gap between the electrodes is provided in a wide gap portion that is larger than the gap between other adjacent electrodes, the electrodes are arranged at approximately equal intervals with the adjacent electrodes, and are substantially the same in shape as the electrodes and do not require electrical connection. The joining material to the peripheral part side of the electronic component joining region of the circuit forming body by the joining material flow regulating member (303, 313, 319, 329, 339, 355, 369, 360) which is a convex part (313) The electronic component mounting method is characterized in that the bonding material is distributed and held substantially uniformly in the entire electronic component bonding region by restricting the flow of the electronic component. 少なくとも樹脂を含む接合材料（５）を回路形成体（６）又は電子部品（１）に供給する工程と、
上記電子部品の接合面の複数の電極（４）上の複数のバンプ（２）と上記回路形成体の四角形の電子部品接合領域の電極（７）とが電気的に接触可能なように上記接合材料を介して上記電子部品と上記回路形成体とを位置決めする位置決め工程と、
加熱及び加圧で上記電子部品を熱圧着して、上記電子部品の上記電極上の上記バンプと上記回路形成体の上記電極とが電気的に接触した状態で上記電子部品の上記接合面と上記回路形成体との間の上記接合材料を硬化させる本圧着工程とを備え、
上記本圧着工程において、上記回路形成体の上記電子部品接合領域で上記接合材料が不均一に流出する部分であってかつ上記回路形成体の上記四角形の電子部品接合領域の一列に配列された隣接電極間の間隔が他の隣接電極間の間隔より大きい広幅間隔部分に備えられることにより上記隣接電極と大略等間隔に配置されかつ上記電極と形状が大略同一でありかつ電気的接合を必要としない凸部（３１３）である接合材料流動規制部材（３０３，３１３，３１９，３２９，３３９，３５５，３６９，３６０）により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制することにより上記電子部品接合領域の全体において上記接合材料が大略均一に分布保持されるようにしたことを特徴とする電子部品の実装方法。Supplying a bonding material (5) containing at least a resin to the circuit forming body (6) or the electronic component (1);
The bonding is performed so that the plurality of bumps (2) on the plurality of electrodes (4) on the bonding surface of the electronic component can be electrically contacted with the electrodes (7) in the rectangular electronic component bonding region of the circuit forming body. A positioning step for positioning the electronic component and the circuit forming body via a material;
The electronic component is thermocompression-bonded by heating and pressurization, and the bumps on the electrodes of the electronic component and the electrodes of the circuit forming body are in electrical contact with the joint surface of the electronic component and the electronic component. A main pressure bonding step of curing the bonding material between the circuit formed body and
In the main crimping step, the bonding material flows out unevenly in the electronic component bonding region of the circuit formed body and adjacent to the circuit formed body arranged in a row of the square electronic component bonding region. Since the gap between the electrodes is provided in a wide gap portion that is larger than the gap between other adjacent electrodes, the electrodes are arranged at approximately equal intervals with the adjacent electrodes, and are substantially the same in shape as the electrodes and do not require electrical connection. The joining material to the peripheral part side of the electronic component joining region of the circuit forming body by the joining material flow regulating member (303, 313, 319, 329, 339, 355, 369, 360) which is a convex part (313) The electronic component mounting method is characterized in that the bonding material is distributed and held substantially uniformly in the entire electronic component bonding region by restricting the flow of the electronic component. 上記接合材料流動規制部材は、上記回路形成体の上記四角形の上記電子部品接合領域のうち対向する２対の辺のそれぞれに上記複数のバンプが形成されている場合にバンプが無いコーナー部に対応する上記回路形成体の上記電子部品接合領域のコーナー部に備えられかつ電気的接合を必要としない第２の凸部（３０３，３６０）をさらに備えており、上記本圧着工程において、上記第２の凸部により、上記コーナー部における上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する請求項２に記載の電子部品の実装方法。  The bonding material flow restricting member corresponds to a corner portion where there is no bump when the plurality of bumps are formed on each of two opposing sides of the quadrangular electronic component bonding region of the circuit forming body. A second convex portion (303, 360) that is provided at a corner portion of the electronic component joining region of the circuit forming body and that does not require electrical joining. The mounting method of the electronic component according to claim 2, wherein the flow of the bonding material to the peripheral portion side of the electronic component bonding region of the circuit forming body at the corner portion is regulated by the convex portion. 上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制することにより、上記電子部品接合領域の全体において上記接合材料が大略均一に分布保持されるとともに上記電子部品の側面を覆うフィレットを形成する請求項１又は２に記載の電子部品の実装方法。  By restricting the flow of the bonding material to the peripheral side of the electronic component bonding region of the circuit formed body, the bonding material is distributed and held substantially uniformly in the entire electronic component bonding region, and the electronic component The mounting method of the electronic component of Claim 1 or 2 which forms the fillet which covers the side surface of this. 上記接合材料流動規制部材である上記凸部は、上記接合工程において、上記電子部品側の電気的に接続不要なダミーバンプ（３）である請求項３に記載の電子部品の実装方法。  4. The electronic component mounting method according to claim 3, wherein the convex portion which is the bonding material flow regulating member is a dummy bump (3) which does not require electrical connection on the electronic component side in the bonding step. 上記本圧着工程において、上記接合材料流動規制部材とは別の第２の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域の外側及び上記電子部品接合領域の周辺部に配置された有機膜（３１９）により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する請求項２，３，５のいずれか１つに記載の電子部品の実装方法。  In the main compression bonding step, the second bonding material flow restriction member different from the bonding material flow restriction member is disposed outside the electronic component bonding region of the circuit forming body and around the electronic component bonding region. The electronic component mounting according to any one of claims 2, 3, and 5, wherein the organic film (319) regulates the flow of the bonding material to the peripheral portion side of the electronic component bonding region of the circuit formed body. Method. 上記接合工程前に、上記接合材料流動規制部材とは別の第３の接合材料流動規制部材としての有機膜（３１９）が、上記回路形成体の上記電子部品接合領域の外側及び上記電子部品接合領域の周辺部に配置される流動規制部材配置工程をさらに備える請求項２，３，５のいずれか１つに記載の電子部品の実装方法。  Before the bonding step, the organic film (319) as a third bonding material flow restricting member different from the bonding material flow restricting member is formed outside the electronic component bonding region of the circuit forming body and the electronic component bonding. The electronic component mounting method according to claim 2, further comprising a flow regulating member arranging step arranged in a peripheral portion of the region. 上記本圧着工程において、上記回路形成体の上記四角形の上記電子部品接合領域のうち中央に一列の上記複数の電極が配置されている場合に上記接合材料流動規制部材とは別の第４の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域の外側から上記中央の一列の上記複数の電極の近傍までに配置されたソルダーレジストの膜（３２９）により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する請求項２，３，５〜７のいずれか１つに記載の電子部品の実装方法。  In the main crimping step, a fourth joint different from the joining material flow regulating member is provided when the plurality of electrodes in a row are arranged in the center of the quadrangular electronic component joining region of the circuit formed body. A solder resist film (329) disposed from the outside of the electronic component joining region of the circuit forming body to the vicinity of the plurality of electrodes in the central row as a material flow regulating member, the electronic of the circuit forming body The electronic component mounting method according to claim 2, wherein the flow of the bonding material to the peripheral portion side of the component bonding region is regulated. 上記回路形成体の上記四角形の上記電子部品接合領域のうち中央に一列の上記複数の電極が配置されている場合に上記接合材料流動規制部材とは別の第５の接合材料流動規制部材としてのソルダーレジストの膜（３２９）が、上記回路形成体の上記電子部品接合領域の外側から上記中央の一列の上記複数の電極の近傍までに配置される流動規制部材配置工程をさらに備える請求項２，３，５〜７のいずれか１つに記載の電子部品の実装方法。  As a fifth bonding material flow restriction member different from the bonding material flow restriction member when the plurality of electrodes in a row are arranged in the center of the square electronic component joining region of the circuit formed body. The flow regulating member disposing step, wherein the solder resist film (329) is disposed from the outside of the electronic component joining region of the circuit forming body to the vicinity of the plurality of electrodes in the central row. The mounting method of the electronic component as described in any one of 3, 5-7. 上記本圧着工程において、上記回路形成体の上記四角形の電子部品接合領域のうち対向する２辺にそれぞれ上記複数のバンプが列状に形成されている場合に、上記接合材料流動規制部材とは別の第６の接合材料流動規制部材として上記電子部品の上記電極と接合に必要な上記電極の接合部を除く、上記回路形成体の上記電子部品接合領域の外側及び上記電子部品接合領域の全面に配置された有機膜（３３９）により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する請求項２，３，５〜９のいずれか１つに記載の電子部品の実装方法。  In the main press-bonding step, when the plurality of bumps are formed in rows on the two opposing sides of the quadrangular electronic component bonding region of the circuit-formed body, separate from the bonding material flow regulating member. As a sixth bonding material flow restricting member, on the outside of the electronic component bonding region of the circuit forming body and on the entire surface of the electronic component bonding region, excluding a bonding portion of the electrode necessary for bonding with the electrode of the electronic component. 10. The flow of the bonding material to the peripheral side of the electronic component bonding region of the circuit forming body is regulated by the arranged organic film (339). Electronic component mounting method. 上記回路形成体の上記四角形の接合領域のうち対向する２辺にそれぞれ上記複数のバンプが列状に形成されている場合に、上記接合材料流動規制部材とは別の第７の接合材料流動規制部材としての有機膜（３３９）が、上記電子部品の上記電極と接合に必要な上記電極の接合部を除く、上記回路形成体の上記電子部品接合領域の外側及び上記電子部品接合領域の全面に配置される流動規制部材配置工程をさらに備える請求項２，３，５〜９のいずれか１つに記載の電子部品の実装方法。  A seventh bonding material flow restriction different from the bonding material flow restriction member when the plurality of bumps are respectively formed in rows on two opposite sides of the rectangular bonding region of the circuit forming body. An organic film (339) as a member is formed on the outside of the electronic component bonding region of the circuit forming body and on the entire surface of the electronic component bonding region except for the bonding portion of the electrode necessary for bonding with the electrode of the electronic component. The electronic component mounting method according to any one of claims 2, 3, 5 to 9, further comprising a flow regulating member arrangement step to be arranged. 上記本圧着工程において、上記接合材料流動規制部材とは別の第８の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域の外側の周辺部に配置されたフィレット形成用凸部（３４５）により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制して上記電子部品の側面を覆うフィレットを形成する請求項２，３，５〜１１のいずれか１つに記載の電子部品の実装方法。  In the main press-bonding step, a fillet forming convex portion (as an eighth bonding material flow restriction member different from the bonding material flow restriction member) disposed on the outer periphery of the electronic component bonding region of the circuit forming body ( 345) to restrict the flow of the bonding material to the periphery of the electronic component bonding region of the circuit forming body to form a fillet covering the side surface of the electronic component. The electronic component mounting method according to any one of the above. 上記接合材料流動規制部材とは別の第９の接合材料流動規制部材として備えられ、上記回路形成体の上記電子部品接合領域の外側の周辺部に配置されて上記電子部品の側面を覆うフィレットを形成するためのフィレット形成用凸部（３４５）により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制して上記電子部品の側面を覆う上記フィレットを形成する請求項２，３，５〜１１のいずれか１つに記載の電子部品の実装方法。  A fillet that is provided as a ninth bonding material flow restriction member different from the bonding material flow restriction member and that is disposed on the outer periphery of the electronic component bonding region of the circuit forming body and covers the side surface of the electronic component. Forming the fillet to cover the side surface of the electronic component by regulating the flow of the bonding material to the peripheral side of the electronic component bonding region of the circuit formed body by the fillet forming convex portion (345) for forming The electronic component mounting method according to any one of claims 2, 3, 5 to 11. 上記フィレット形成用凸部（３４５）は１層以上の膜より構成されている請求項１２又は１３に記載の電子部品の実装方法。  14. The electronic component mounting method according to claim 12, wherein the fillet forming convex portion (345) is composed of one or more layers. 上記フィレット形成用凸部（３４５）は、１層以上の基板ソルダーレジストの膜より構成されている請求項１２又は１３に記載の電子部品の実装方法。  The method for mounting an electronic component according to claim 12 or 13, wherein the fillet forming convex portion (345) is composed of one or more layers of a substrate solder resist film. 上記フィレット形成用凸部（３４５）は、上記回路形成体の上記電極と同じ構成でかつ上記電極より厚いダミー電極より構成されている請求項１２又は１３に記載の電子部品の実装方法。  14. The electronic component mounting method according to claim 12, wherein the fillet forming convex portion (345) includes a dummy electrode having the same configuration as the electrode of the circuit forming body and being thicker than the electrode. 上記本圧着工程において、上記接合材料流動規制部材とは別の第１０の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さの凸部（３５５，３６９）により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する請求項２，３，５〜１６のいずれか１つに記載の電子部品の実装方法。  In the main press-bonding step, as a tenth bonding material flow restriction member different from the bonding material flow restriction member, in the region where the bonding material exhibits non-uniform flow in the electronic component bonding region of the circuit forming body, The flow of the bonding material to the peripheral portion side of the electronic component bonding region of the circuit forming body is regulated by a convex portion (355, 369) having substantially the same thickness as the electrode. The electronic component mounting method according to any one of the above. 上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さの凸部（３５５，３６９）を備えるようにした請求項２，３，５〜１６のいずれか１つに記載の電子部品の実装方法。  4. A projecting portion (355, 369) having substantially the same thickness as the electrode is provided in a region where the joining material exhibits non-uniform flow in the electronic component joining region of the circuit forming body. , 5-16, The mounting method of the electronic component as described in any one of 5-16. 少なくとも樹脂を含む接合材料（５）を回路形成体（６）又は電子部品（１）に供給する工程と、
上記電子部品の接合面の複数の電極（４）上の複数のバンプ（２）と上記回路形成体の電子部品接合領域の電極（７）とが電気的に接触可能なように上記接合材料を介して上記電子部品と上記回路形成体とを位置決めする位置決め工程と、
加熱及び加圧で上記電子部品を熱圧着して、上記電子部品の上記電極上の上記バンプと上記回路形成体の上記電極とが電気的に接触した状態で上記電子部品の上記接合面と上記回路形成体との間の上記接合材料を硬化させる本圧着工程とを備え、
上記本圧着工程において、接合材料流動規制部材（３０３，３１３，３１９，３２９，３３９，３５５，３６９，３６０）として上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さでかつ上記回路形成体の上記電子部品接合領域の電気的配線に関与しないメッシュ状のダミー電極（３６９）により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する電子部品の実装方法。Supplying a bonding material (5) containing at least a resin to the circuit forming body (6) or the electronic component (1);
The bonding material is used so that the plurality of bumps (2) on the plurality of electrodes (4) on the bonding surface of the electronic component and the electrodes (7) in the electronic component bonding region of the circuit forming body can be in electrical contact with each other. A positioning step for positioning the electronic component and the circuit formed body via,
The electronic component is thermocompression-bonded by heating and pressurization, and the bumps on the electrodes of the electronic component and the electrodes of the circuit forming body are in electrical contact with the joint surface of the electronic component and the electronic component. A main pressure bonding step of curing the bonding material between the circuit formed body and
In the main compression bonding step, the bonding material flows unevenly in the electronic component bonding region of the circuit forming body as the bonding material flow regulating member (303, 313, 319, 329, 339, 355, 369, 360). In the region shown, the electronic component joining region of the circuit forming body is formed by a mesh-like dummy electrode (369) having substantially the same thickness as the electrode and not involved in the electrical wiring of the electronic component joining region of the circuit forming body. A method for mounting an electronic component that restricts the flow of the bonding material to the peripheral portion side. 少なくとも樹脂を含む接合材料（５）を回路形成体（６）又は電子部品（１）に供給する工程と、
上記電子部品の接合面の複数の電極（４）上の複数のバンプ（２）と上記回路形成体の電子部品接合領域の電極（７）とが電気的に接触可能なように上記接合材料を介して上記電子部品と上記回路形成体とを位置決めする位置決め工程と、
加熱及び加圧で上記電子部品を熱圧着して、上記電子部品の上記電極上の上記バンプと上記回路形成体の上記電極とが電気的に接触した状態で上記電子部品の上記接合面と上記回路形成体との間の上記接合材料を硬化させる本圧着工程とを備え、
上記本圧着工程において、接合材料流動規制部材（３０３，３１３，３１９，３２９，３３９，３５５，３６９，３６０）として上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さでかつ上記回路形成体の上記電子部品接合領域の電気的配線に関与せずかつ上記接合材料が貫通可能な貫通穴（３６９ｈ）を有するダミー電極（３６９）により、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する電子部品の実装方法。Supplying a bonding material (5) containing at least a resin to the circuit forming body (6) or the electronic component (1);
The bonding material is used so that the plurality of bumps (2) on the plurality of electrodes (4) on the bonding surface of the electronic component and the electrodes (7) in the electronic component bonding region of the circuit forming body can be in electrical contact with each other. A positioning step for positioning the electronic component and the circuit formed body via,
The electronic component is thermocompression-bonded by heating and pressurization, and the bumps on the electrodes of the electronic component and the electrodes of the circuit forming body are in electrical contact with the joint surface of the electronic component and the electronic component. A main pressure bonding step of curing the bonding material between the circuit formed body and
In the main compression bonding step, the bonding material flows unevenly in the electronic component bonding region of the circuit forming body as the bonding material flow regulating member (303, 313, 319, 329, 339, 355, 369, 360). A dummy electrode (369h) having a through hole (369h) through which the bonding material can pass and is not involved in electrical wiring in the electronic component bonding region of the circuit forming body in the region shown in FIG. The electronic component mounting method for restricting the flow of the bonding material to the peripheral portion side of the electronic component bonding region of the circuit formed body. 請求項１〜２０のいずれか１つに記載の電子部品の実装方法により製造された電子部品実装体。  The electronic component mounting body manufactured by the mounting method of the electronic component as described in any one of Claims 1-20. 電子部品（１）の接合面の複数の電極（４）の複数のバンプ（２）が回路形成体（６）の四角形の電子部品接合領域の電極（７）に電気的に接触し、上記電子部品と上記回路形成体との間に少なくとも樹脂を含む接合材料（５）が介在し、
上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する接合材料流動規制部材（３０３，３１３，３１９，３２９，３３９，３５５，３６９，３６０）が、上記回路形成体の上記四角形の電子部品接合領域の一列に配列された隣接電極間の間隔が他の隣接電極間の間隔より大きい広幅間隔部分に備えられ、上記隣接電極と大略等間隔に配置されかつ上記電極と形状が大略同一でありかつ電気的に接続されない凸部（３１３）であることを特徴とする電子部品実装体。A plurality of bumps (2) is in electrical contact with the electrode (7) of the electronic component bonding region of square circuit forming member (6) of the plurality of electrodes of the bonding surface of the electronic component (1) (4), the electronic A bonding material (5) containing at least a resin is interposed between the component and the circuit forming body ,
A bonding material flow restricting member (303, 313, 319, 329, 339, 355, 369, 360) for restricting the flow of the bonding material to the peripheral part side of the electronic component bonding region of the circuit forming body is the circuit. spacing between adjacent electrodes arranged in a row of the electronic component bonding region above SL square formers are provided a large wide-interval area than the spacing between other adjacent electrodes, and is located approximately equidistant and the adjacent electrode An electronic component mounting body characterized in that it is a convex portion (313) that is substantially the same in shape as the electrode and is not electrically connected . 上記接合材料流動規制部材は、上記回路形成体の上記四角形の上記電子部品接合領域のうち対向する２対の辺のそれぞれに上記複数のバンプが形成されている場合にバンプが無いコーナー部に対応する上記回路形成体の上記電子部品接合領域のコーナー部に、電気的接合を必要とせず、かつ、上記コーナー部における上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する凸部（３０３，３６０）をさらに備える請求項２２に記載の電子部品実装体。  The bonding material flow restricting member corresponds to a corner portion where there is no bump when the plurality of bumps are formed on each of two opposing sides of the quadrangular electronic component bonding region of the circuit forming body. In the corner portion of the electronic component bonding region of the circuit forming body, electrical bonding is not required, and the bonding material to the peripheral portion side of the electronic component bonding region of the circuit forming body in the corner portion The electronic component mounting body according to claim 22, further comprising a convex portion (303, 360) for regulating flow. 上記電子部品接合領域の全体において上記接合材料が大略均一に分布保持されるとともに上記電子部品の側面を覆うフィレットが形成されている請求項２２に記載の電子部品実装体。  The electronic component mounting body according to claim 22, wherein the bonding material is distributed and held substantially uniformly in the entire electronic component bonding region, and a fillet is formed to cover a side surface of the electronic component. 上記接合材料流動規制部材である上記凸部は、上記電子部品側の電気的に接続不要なダミーバンプ（３）である請求項２３に記載の電子部品実装体。  The electronic component mounting body according to claim 23, wherein the convex portion that is the bonding material flow regulating member is a dummy bump (3) that does not require electrical connection on the electronic component side. 上記接合材料流動規制部材とは別の第１１の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域の外側及び上記電子部品接合領域の周辺部に、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する有機膜（３１９）を備える請求項２２〜２５のいずれか１つに記載の電子部品実装体。  As an eleventh bonding material flow restricting member different from the bonding material flow restricting member, the electronic component of the circuit forming body is provided outside the electronic component joining region of the circuit forming body and around the electronic component joining region. The electronic component mounting body according to any one of claims 22 to 25, further comprising an organic film (319) that regulates the flow of the bonding material toward the periphery of the bonding region. 上記回路形成体の上記四角形の上記電子部品接合領域のうち中央に一列の上記複数の電極が配置されている場合に上記接合材料流動規制部材とは別の第１２の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域の外側から上記中央の一列の上記複数の電極の近傍までの部分に、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制するソルダーレジストの膜（３２９）を備える請求項２２〜２６のいずれか１つに記載の電子部品実装体。  As a twelfth bonding material flow restricting member different from the bonding material flow restricting member when the plurality of electrodes in a row are arranged in the center in the quadrangular electronic component joining region of the circuit formed body The bonding material flows from the outside of the electronic component bonding region of the circuit forming body to the vicinity of the plurality of electrodes in the central row to the peripheral side of the electronic component bonding region of the circuit forming member. The electronic component mounting body according to any one of claims 22 to 26, further comprising a solder resist film (329) to be regulated. 上記回路形成体の上記四角形の接合領域のうち対向する２辺にそれぞれ上記複数のバンプが列状に形成されている場合に、上記接合材料流動規制部材とは別の第１３の接合材料流動規制部材として上記電子部品の上記電極と接合に必要な上記電極の接合部を除く、上記回路形成体の上記電子部品接合領域の外側及び上記電子部品接合領域の全面に、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する有機膜（３３９）を備える請求項２２〜２７のいずれか１つに記載の電子部品実装体。  A thirteenth bonding material flow restriction different from the bonding material flow restriction member when the plurality of bumps are respectively formed in rows on two opposite sides of the rectangular bonding region of the circuit formed body. The electronic component of the circuit-forming body is disposed outside the electronic-component joining region of the circuit-forming body and on the entire surface of the electronic-component joining region, excluding a joining portion of the electrode necessary for joining the electrode of the electronic component as a member The electronic component mounting body according to any one of claims 22 to 27, further comprising an organic film (339) that regulates the flow of the bonding material toward the peripheral portion side of the component bonding region. 上記接合材料流動規制部材とは別の第１４の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域の外側の周辺部に、上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制して上記電子部品の側面を覆うフィレットを形成するフィレット形成用凸部（３４５）を備える請求項２２〜２８のいずれか１つに記載の電子部品実装体。  As a fourteenth bonding material flow restricting member different from the bonding material flow restricting member, the outer peripheral side of the electronic component joining region of the circuit forming member is disposed on the outer peripheral side of the electronic component joining region of the circuit forming member. The electronic component mounting body according to any one of claims 22 to 28, further comprising a fillet forming convex portion (345) that forms a fillet that covers a side surface of the electronic component by restricting a flow of the bonding material to the surface. 上記フィレット形成用凸部（３４５）は１層以上の膜より構成されている請求項２９に記載の電子部品実装体。  30. The electronic component mounting body according to claim 29, wherein the fillet forming convex portion (345) is composed of one or more layers. 上記フィレット形成用凸部（３４５）は、１層以上の基板ソルダーレジストの膜より構成されている請求項２９に記載の電子部品実装体。  30. The electronic component mounting body according to claim 29, wherein the fillet forming convex portion (345) is composed of one or more layers of a substrate solder resist film. 上記フィレット形成用凸部（３４５）は、上記回路形成体の上記電極と同じ構成でかつ上記電極より厚いダミー電極より構成されている請求項２９に記載の電子部品実装体。  30. The electronic component mounting body according to claim 29, wherein the fillet forming convex portion (345) includes a dummy electrode having the same configuration as the electrode of the circuit forming body and being thicker than the electrode. 上記接合材料流動規制部材とは別の第１５の接合材料流動規制部材として上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さでかつ上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する凸部（３５５，３６９）を備える請求項２２〜３２のいずれか１つに記載の電子部品実装体。  As a fifteenth bonding material flow restricting member different from the bonding material flow restricting member, in the region where the bonding material exhibits non-uniform flow in the electronic component bonding region of the circuit forming body, the thickness is approximately the same as the electrode. The electron according to any one of claims 22 to 32, further comprising a convex portion (355, 369) for restricting the flow of the bonding material toward the peripheral portion side of the electronic component bonding region of the circuit forming body. Component mounting body. 電子部品（１）の接合面の複数の電極（４）の複数のバンプ（２）を回路形成体（６）の電子部品接合領域の電極（７）に電気的に接触した状態で、少なくとも樹脂を含む接合材料（５）を介して上記電子部品を上記回路形成体に接合させることにより構成される電子部品実装体であって、
上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する接合材料流動規制部材（３０３，３１３，３１９，３２９，３３９，３５５，３６９，３６０）を、上記回路形成体の上記電子部品接合領域で上記接合材料が不均一に流出する部分に備え、
上記接合材料流動規制部材は、上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さでかつ上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制しかつ上記回路形成体の上記電子部品接合領域の電気的配線に関与しないメッシュ状のダミー電極（３６９）である電子部品実装体。In a state where the plurality of bumps (2) of the plurality of electrodes (4) on the bonding surface of the electronic component (1) are in electrical contact with the electrodes (7) in the electronic component bonding region of the circuit formed body (6), at least resin An electronic component mounting body configured by bonding the electronic component to the circuit forming body via a bonding material (5) including:
A bonding material flow restricting member (303, 313, 319, 329, 339, 355, 369, 360) for restricting the flow of the bonding material to the peripheral part side of the electronic component bonding region of the circuit forming body is connected to the circuit. In the part where the bonding material flows out unevenly in the electronic component bonding region of the formed body,
The bonding material flow restricting member is formed in a region where the bonding material exhibits a non-uniform flow in the electronic component bonding region of the circuit formed body, and is substantially the same thickness as the electrode and the electronic component of the circuit formed body. The electronic component mounting body which is a mesh-like dummy electrode (369) which regulates the flow of the bonding material to the peripheral portion side of the bonding region and does not participate in the electrical wiring of the electronic component bonding region of the circuit forming body. 電子部品（１）の接合面の複数の電極（４）の複数のバンプ（２）を回路形成体（６）の電子部品接合領域の電極（７）に電気的に接触した状態で、少なくとも樹脂を含む接合材料（５）を介して上記電子部品を上記回路形成体に接合させることにより構成される電子部品実装体であって、
上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制する接合材料流動規制部材（３０３，３１３，３１９，３２９，３３９，３５５，３６９，３６０）を、上記回路形成体の上記電子部品接合領域で上記接合材料が不均一に流出する部分に備え、
上記接合材料流動規制部材は、上記回路形成体の上記電子部品接合領域内で上記接合材料が不均一な流動を示す領域に、上記電極と大略同一厚さでかつ上記回路形成体の上記電子部品接合領域の周辺部側への上記接合材料の流動を規制しかつ上記回路形成体の上記電子部品接合領域の電気的配線に関与せずかつ上記接合材料が貫通可能な貫通穴（３６９ｈ）を有するダミー電極（３６９）である電子部品実装体。In a state where the plurality of bumps (2) of the plurality of electrodes (4) on the bonding surface of the electronic component (1) are in electrical contact with the electrodes (7) in the electronic component bonding region of the circuit formed body (6), at least resin An electronic component mounting body configured by bonding the electronic component to the circuit forming body via a bonding material (5) including:
A bonding material flow restricting member (303, 313, 319, 329, 339, 355, 369, 360) for restricting the flow of the bonding material to the peripheral part side of the electronic component bonding region of the circuit forming body is connected to the circuit. In the part where the bonding material flows out unevenly in the electronic component bonding region of the formed body,
The bonding material flow restricting member is formed in a region where the bonding material exhibits a non-uniform flow in the electronic component bonding region of the circuit formed body, and is substantially the same thickness as the electrode and the electronic component of the circuit formed body. There is a through hole (369h) that restricts the flow of the bonding material to the peripheral side of the bonding region and does not participate in the electrical wiring of the electronic component bonding region of the circuit forming body and allows the bonding material to pass therethrough. The electronic component mounting body which is a dummy electrode (369).
JP2000326879A 2000-06-16 2000-10-26 Electronic component mounting method and electronic component mounting body Expired - Fee Related JP4041649B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000326879A JP4041649B2 (en) 2000-10-26 2000-10-26 Electronic component mounting method and electronic component mounting body
PCT/JP2001/005050 WO2001097277A1 (en) 2000-06-16 2001-06-14 Electronic parts packaging method and electronic parts package
US10/311,476 US7355126B2 (en) 2000-06-16 2001-06-14 Electronic parts packaging method and electronic parts package
KR10-2002-7016837A KR100468929B1 (en) 2000-06-16 2001-06-14 Electronic parts packaging method and electronic parts package
CNB018112951A CN1278402C (en) 2000-06-16 2001-06-14 Electronic parts packaging method and electronic parts package
TW090114601A TWI226085B (en) 2000-06-16 2001-06-15 Mounting method of electronic component and electronic component forming-body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000326879A JP4041649B2 (en) 2000-10-26 2000-10-26 Electronic component mounting method and electronic component mounting body

Publications (2)

Publication Number Publication Date
JP2002134559A JP2002134559A (en) 2002-05-10
JP4041649B2 true JP4041649B2 (en) 2008-01-30

Family

ID=18803996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000326879A Expired - Fee Related JP4041649B2 (en) 2000-06-16 2000-10-26 Electronic component mounting method and electronic component mounting body

Country Status (1)

Country Link
JP (1) JP4041649B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196728A (en) 2005-01-14 2006-07-27 Seiko Epson Corp Electronic component, electro-optical device and electronic apparatus
US7564536B2 (en) 2005-11-08 2009-07-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4828238B2 (en) * 2006-01-19 2011-11-30 オンセミコンダクター・トレーディング・リミテッド Semiconductor device
JP2008205057A (en) * 2007-02-19 2008-09-04 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method therefor
JP2009094353A (en) * 2007-10-10 2009-04-30 Furukawa Electric Co Ltd:The Semiconductor device and method of manufacturing the same
KR100924552B1 (en) * 2007-11-30 2009-11-02 주식회사 하이닉스반도체 Substrate for semiconductor package and semiconductor package having the same
US8421979B2 (en) 2008-07-28 2013-04-16 Sharp Kabushiki Kaisha Display panel and display device including the same
JP5954075B2 (en) * 2012-09-21 2016-07-20 ソニー株式会社 Semiconductor device and manufacturing method of semiconductor device
CN105259720B (en) * 2015-10-23 2018-11-27 深超光电（深圳）有限公司 Array substrate and the display panel for using the array substrate

Also Published As

Publication number Publication date
JP2002134559A (en) 2002-05-10

Similar Documents

Publication Publication Date Title
US6137183A (en) Flip chip mounting method and semiconductor apparatus manufactured by the method
US7355126B2 (en) Electronic parts packaging method and electronic parts package
JP3150347B2 (en) Method and apparatus for mounting electronic components on circuit board
US7902678B2 (en) Semiconductor device and manufacturing method thereof
US20110139500A1 (en) Electrical connecting method and electrically connected connection structure
US20120111616A1 (en) Electronic-component-mounted wiring substrate and method of manufacturing the same
JP4041649B2 (en) Electronic component mounting method and electronic component mounting body
KR100701133B1 (en) Electric connecting method and apparatus
JP2012164965A (en) Wiring board and manufacturing method of the same
JP4051570B2 (en) Manufacturing method of semiconductor device
JPH10112476A (en) Manufacture of semiconductor device
JP2001223465A (en) Connection method of printed-wiring board and connection structure
JP2000260817A (en) Semiconductor device and manufacture thereof
JP3741553B2 (en) Semiconductor device connection structure and connection method, and semiconductor device package using the same
JP2001127194A (en) Flip chip semiconductor device and its manufacturing method
JP4287987B2 (en) Electronic component mounting method and electronic component mounting body
JP2003152022A (en) Bonding member, semiconductor device and method for manufacturing the same, circuit board, and electronic equipment
KR101008824B1 (en) Semiconductor device having electrode attached polymer particle and Semiconductor package using the same
JP3923248B2 (en) Method of mounting electronic component on circuit board and circuit board
US20120186857A1 (en) Method for manufacturing wiring board for mounting electronic component, wiring board for mounting electronic component, and method for manufacturing wiring board having an electronic component
JPH11340278A (en) Resin sheet for mounting semiconductor device, flip chip mounting method and circuit board
JP2002076208A (en) Packaging structure of semiconductor device and display of structure and its manufacturing method
JPH06140554A (en) Outgoing lead of electronic component and joining method therefor
JP2000208544A (en) Bare ic chip and semiconductor device
JP2009016414A (en) Electronic circuit device and electronic apparatus using the same, and manufacturing method of the electronic circuit device

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060919

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061116

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20061212

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070213

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20071016

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20071112

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101116

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111116

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121116

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121116

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131116

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees