JP4023861B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4023861B2
JP4023861B2 JP01042097A JP1042097A JP4023861B2 JP 4023861 B2 JP4023861 B2 JP 4023861B2 JP 01042097 A JP01042097 A JP 01042097A JP 1042097 A JP1042097 A JP 1042097A JP 4023861 B2 JP4023861 B2 JP 4023861B2
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JP
Japan
Prior art keywords
line
column selection
level
potential
column
Prior art date
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Expired - Fee Related
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JP01042097A
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English (en)
Japanese (ja)
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JPH10222997A (ja
JPH10222997A5 (enExample
Inventor
徹 市村
裕美 沖本
正紀 林越
洋一 飛田
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Renesas Technology Corp
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Renesas Technology Corp
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Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP01042097A priority Critical patent/JP4023861B2/ja
Priority to TW086101012A priority patent/TW328593B/zh
Publication of JPH10222997A publication Critical patent/JPH10222997A/ja
Publication of JPH10222997A5 publication Critical patent/JPH10222997A5/ja
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Publication of JP4023861B2 publication Critical patent/JP4023861B2/ja
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Expired - Fee Related legal-status Critical Current

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
JP01042097A 1996-03-01 1997-01-23 半導体記憶装置 Expired - Fee Related JP4023861B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP01042097A JP4023861B2 (ja) 1996-03-01 1997-01-23 半導体記憶装置
TW086101012A TW328593B (en) 1996-03-01 1997-01-29 Semiconductor memory device

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP4525596 1996-03-01
JP19820496 1996-07-26
JP8-198204 1996-07-26
JP8-321950 1996-12-02
JP8-45255 1996-12-02
JP32195096 1996-12-02
JP01042097A JP4023861B2 (ja) 1996-03-01 1997-01-23 半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH10222997A JPH10222997A (ja) 1998-08-21
JPH10222997A5 JPH10222997A5 (enExample) 2004-12-24
JP4023861B2 true JP4023861B2 (ja) 2007-12-19

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ID=27455389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP01042097A Expired - Fee Related JP4023861B2 (ja) 1996-03-01 1997-01-23 半導体記憶装置

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JP (1) JP4023861B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100582422B1 (ko) * 2004-05-15 2006-05-22 에스티마이크로일렉트로닉스 엔.브이. 낸드 플래시 메모리 소자
US11521697B2 (en) * 2019-01-30 2022-12-06 STMicroelectronics International, N.V. Circuit and method for at speed detection of a word line fault condition in a memory circuit

Also Published As

Publication number Publication date
JPH10222997A (ja) 1998-08-21

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