JP4023677B2 - LiNbO3 oriented thin film forming method - Google Patents

LiNbO3 oriented thin film forming method Download PDF

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JP4023677B2
JP4023677B2 JP2003037803A JP2003037803A JP4023677B2 JP 4023677 B2 JP4023677 B2 JP 4023677B2 JP 2003037803 A JP2003037803 A JP 2003037803A JP 2003037803 A JP2003037803 A JP 2003037803A JP 4023677 B2 JP4023677 B2 JP 4023677B2
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linbo
thin film
film
sio
oriented
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JP2004244703A (en
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方省 赤澤
勝 嶋田
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Nippon Telegraph and Telephone Corp
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Description

【０００１】
【発明の属する技術分野】
本発明は、光導波路や機能性光学部品に用いられるLiNbＯ３光学薄膜を作製するLiNbＯ３配向性薄膜形成方法に関する。
【０００２】
【従来の技術】
LiNbＯ３（ニオブ酸リチウム）のバルク結晶は、電気光学効果、非線形光学効果、音響光学効果、ピエゾ電気効果など数々の特性を示す。このため、LiNbＯ３のバルク結晶は光通信分野や光応用分野で広く用いられてきた。その一方で、LiNbＯ３薄膜を異種基板上に成膜して、薄膜ならではの低電圧駆動、素子の微細化などのメリットを活かすことを目的とするLiNbＯ３薄膜の成膜方法が開発されている。その方法の代表的なものとして、例えばＲＦ（高周波）スッパタ法、マグネトロンスパッタ法、ＥＣＲ（電子サイクロトロン共鳴）スパッタ法、有機金属気相成長法、ゾル−ゲル法、レーザーアブレーション法などが挙げられる。
【０００３】
LiNbＯ３薄膜を光導波路のコアとして用いるには、LiNbＯ３よりも低屈折率の材料をクラッド層とし、この上にLiNbＯ３薄膜を形成する必要がある。従来から、LiNbＯ３結晶と格子整合が取れて、しかも、低屈折率であるサファイア基板が主に用いられてきた。
【０００４】
最近、シリコンとSiＯ２との間の高い屈折率差に着目した微小光回路の可能性が指摘されている。そのような系にLiNbＯ３薄膜を組み入れ、電気光学効果や非線形光学効果を利用して、機能素子部品として働かせるために、LiNbＯ３結晶よりも屈折率の低い石英基板やSiＯ２膜の上に、LiNbＯ３の配向性膜を成膜することが必要である。
【０００５】
【発明が解決しようとする課題】
しかし、LiNbＯ３結晶よりも屈折率の低い石英基板やSiＯ２膜の上に、LiNbＯ３配向性膜を成膜するためには、次のような問題点がある。つまり、SiＯ２は元来無定形であるため、サファイア基板上のようなエピタキシャル成長を期待することはできない。しかし、ＥＣＲスパッタ法を用いると、本来、LiNbＯ３と格子整合しないSi基板上で、良好な結晶性と配向性を兼ね備えるLiNbＯ３薄膜が得られている。この点については、次の文献に記載されている。
文献１：特願２００２−１１８７１３ LiNbＯ３薄膜形成方法；赤澤方省、嶋田勝 Ｈ１４／０４／２２
【０００６】
ところが、Si基板上の成膜と同様な条件をSiＯ２膜上での成長に適用した場合、十分な結晶性と配向性とを有するLiNbＯ３薄膜が得られないという問題点があった。
【０００７】
本発明は、前記の課題を解決し、十分な結晶性と配向性とを有するLiNbＯ３薄膜を、石英基板上またはSiＯ２膜上に形成することができるLiNbＯ３配向性薄膜形成方法を提供することを目的とする。
【０００８】
【課題を解決するための手段】
前記課題を解決するために、請求項１の発明は、定組成のLiNbＯ３ターゲットを用いた電子サイクロトロン共鳴スパッタリング法によるLiNbＯ３配向性薄膜形成方法において、石英基板もしくはSiＯ２膜（１）の温度が４３０℃以上４９０℃以下の状態で酸素ガスを供給して、前記石英基板もしくは前記SiＯ２膜（１）上にLiNbＯ３薄膜（２）を形成することを特徴とするLiNbＯ３配向性薄膜形成方法である。
請求項２の発明は、請求項１に記載のLiNbＯ３配向性薄膜形成方法において、前記酸素ガスの供給は、LiNb３Ｏ８相が生ずるよりも低く、かつ、前記LiNbＯ３ターゲット表面を一定量の酸素原子が覆った状態を保つのに十分な流量にすることを特徴とする。
【０００９】
本発明により、SiＯ２上では非常に限られた成膜条件の範囲において、配向性膜が得られることが明らかになり、光学的薄膜としての利用に適した配向性結晶薄膜が得られるようになった。
【００１０】
【発明の実施の形態】
つぎに、この発明の実施の形態について、図面を参照して詳しく説明する。この実施の形態では、図１に示すように、SiＯ２膜１上にLiNbＯ３薄膜２を形成する。
【００１１】
ＥＣＲスパッタ法によりSi基板上にLiNbＯ３薄膜を成膜する場合の最適温度は、前述の文献１に記載されているように５３０℃である。この温度ではSiＯ２膜で良好な配向性結晶薄膜が得られないため、以下にその原因を検討した。
【００１２】
図２は、基板温度４６０℃および酸素分圧１.２ｍPaの条件下において、膜厚１４０nmのSiＯ２膜１上に成膜した膜厚３６０nmのLiNbＯ３薄膜２試料中の各元素の深さ分布を、二次イオン質量分析法により測定した結果である。Li原子の分布はLiNbＯ３／SiＯ２界面３付近（深さ４６０nm）にパイルアップ３Ａが見られるものの、LiNbＯ３薄膜２とSiＯ２膜１との界面３で急峻に落ちている。同様に、Nb原子の分布もLiNbＯ３薄膜２とSiＯ２膜１の界面３で２桁近く落ちている。したがって、基板温度４６０℃では、LiNbＯ３薄膜２とSiＯ２膜１とは基本的に界面で分離している。この結果、良好な配向性結晶薄膜を得ることができる。
【００１３】
一方、成膜温度５３０℃および酸素分圧１.２ｍPaの条件下による結果を図３に示す。図３の結果では、Li原子とNb原子の分布はLiNbＯ３薄膜とSiＯ２膜との界面より深い領域でも緩やかにしか下がらず、SiＯ２膜中へ拡散していることが分かる。Si原子のLiNbＯ３膜内の濃度は、図２に比べて約２桁程度高く、SiＯ２膜から拡散してLiNbＯ３薄膜の表面まで達している。このように、LiNbＯ３／SiＯ２界面が著しくだれていることが、LiNbＯ３薄膜の配向性に多大な影響を与えることは必死である。プラズマが作る電界のもとで成膜をするスパッタリング法の最中には、このようなSi、Li、Nb原子の相互拡散現象は、単なる加熱の効果以上に顕著に起るものと推察される。この結果、良好な配向性結晶薄膜を得ることができない。
【００１４】
逆に、基板温度が４６０℃よりもさらに低くなると、LiNbＯ３薄膜２の結晶性は悪化する。このことから、LiNbＯ３配向性結晶薄膜を得るためには、基板温度４６０℃付近が最適である。また、基板温度４６０℃付近から少しでもずれると、結晶性もしくは配向性が悪くなることが分かる。
【００１５】
同様に、酸素分圧に関しても最適な条件が存在する。もし、酸素分圧が高すぎると、一度成膜したLiNbＯ３薄膜２からのLi２Ｏ分子の脱離が促進されて、LiNb３Ｏ８相が生じてしまう。逆に、酸素分圧が低すぎると、ターゲット表面が酸素欠損をした状態になり、多結晶状態のLiNbＯ３が成長する。したがって、ターゲット表面を一定量の酸素原子が覆う程度に酸素分圧は高く、LiNbＯ３の単一相だけが得られる程度に酸素分圧は低くなければならない。
【００１６】
以上述べた基板温度と酸素分圧とによって、SiＯ２膜上に＜００１＞方向へ高配向したLiNbＯ３結晶薄膜であるLiNbＯ３薄膜２を得ることが可能になった。
【００１７】
【実施例】
以下に、実施例をあげて本発明をさらに詳細に説明するが、本発明は本実施例によって限定されるものではない。ＥＣＲプラズマスパッタ法により、SiＯ２膜上に連続成膜したLiNbＯ３薄膜（薄膜３５０nm）のＸ線回折スペクトルを図４に示す。スパッタガスとしてアルゴンと酸素との混合気体を用い、実施の形態で述べた実験結果を踏まえて、酸素流量０.５sccm、基板温度４６０℃の条件で連続的にLiNbＯ３薄膜を成長させた。
【００１８】
Si基板からの＜００４＞反射（６９.５°）以外には、LiNbＯ３薄膜がＣ軸配向していることを示す＜００６＞反射（３８.９°）、＜００１２＞反射（８３.５°）だけが観測されている。図５に示す基板温度を変化させたときの＜００６＞反射点強度の変化から、４６０℃で結晶性が最大になることが分かる。４６０℃以下では、基板温度が低くなる程、結晶性が劣化して、＜００６＞反射点の強度が低下する。４６０℃以上では、Li原子の拡散による組成性の崩れや界面のラフネス増大による配向性の変位の拡大により、＜００６＞反射点の強度が低下するものと考えられる。アモルファス状態から結晶化が始まる温度は４３０℃であるため、４３０〜４９０℃の範囲で成膜が可能であるが、基板温度４４０〜４９０℃が実用上成膜に使用できる温度である。
【００１９】
一方、酸素流量に関しては、図６に示す酸素分圧を０〜８ｍPaの範囲で変化させたときの＜００６＞反射点強度の変化から、１ｍPaで配向性・結晶性が最大になることが分かる。実用上は、１〜３ｍPaが成膜に使える範囲であることが分かる。この最適酸素ガス分圧は、装置の排気速度、イオン源に投入するマイクロ波のパワー、ターゲットに印加する電圧に依存するため、使用する装置ごとに異なる。しかし、共通して言えることは、高酸素分圧で配向性・結晶性が低下するのは、LiＯ２分子の離脱が促進されるからであり、１ｍPaより低い酸素分圧で配向性・結晶性が低下するのは、成膜されるLiNbＯ３薄膜の内部が酸素不足になるからである。
【００２０】
以上、本発明の実施の形態および実施例を詳述してきたが、具体的な構成は本実施の形態および実施例に限られるものではなく、本発明の要旨を逸脱しない範囲の設計の変更等があっても、本発明に含まれる。たとえば、前記の実施の形態および実施例では、結晶性と配向性とを有するLiNbＯ３薄膜をSiＯ２膜上に形成する場合を例としたが、SiＯ２膜と同様に石英基板上にLiNbＯ３薄膜を形成してもよい。
【００２１】
【発明の効果】
以上、説明したように、本発明によれば、SiＯ２膜または石英基板上では非常に限られた成膜条件の範囲で、LiNbＯ３の配向性膜を得ることができることが明らかになり、光学的薄膜としての利用に適した配向性結晶薄膜を得ることができる。
【図面の簡単な説明】
【図１】発明の実施の形態によってSiＯ２膜上に成膜したLiNbＯ３薄膜を示す断面図である。
【図２】ＥＣＲスパッタ法により、基板温度４６０℃、酸素分圧１.２ｍPaの条件下でSiＯ２膜上に成膜したLiNbＯ３薄膜の二次イオン質量分析法による各元素の深さ分布を示す図である。
【図３】ＥＣＲスパッタ法により、基板温度５３０℃、酸素分圧１.２ｍPaの条件下でSiＯ２膜上に成膜したLiNbＯ３薄膜の二次イオン質量分析法による各元素の深さ分布を示す図である。
【図４】ＥＣＲスパッタ法により、基板温度４６０℃、酸素分圧１.２ｍPaの条件下でSiＯ２膜上に成膜したLiNbＯ３薄膜のＸ線回折θ−２θスペクトルを示す図である。
【図５】ＥＣＲスパッタ法により成膜したLiNbＯ３薄膜の＜００６＞反射点の基板温度依存性を示す図である。
【図６】ＥＣＲスパッタ法により成膜したLiNbＯ３薄膜の＜００６＞反射点の酸素分圧依存性を示す図である。
【符号の説明】
１ SiＯ２膜
２ LiNbＯ３薄膜
３ LiNbＯ３／SiＯ２界面[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a LiNbO 3 oriented thin film forming method of making a LiNbO 3 optical thin film used in the optical waveguide and a functional optical components.
[0002]
[Prior art]
A bulk crystal of LiNbO 3 (lithium niobate) exhibits various characteristics such as an electro-optic effect, a nonlinear optical effect, an acousto-optic effect, and a piezoelectric effect. For this reason, the bulk crystal of LiNbO 3 has been widely used in the optical communication field and the optical application field. On the other hand, by forming a LiNbO 3 thin film on a substrate different low voltage thin film unique, the LiNbO 3 thin film forming method that aims to exploit the benefits of such miniaturization of elements have been developed . Typical examples of the method include RF (radio frequency) sputtering method, magnetron sputtering method, ECR (electron cyclotron resonance) sputtering method, metalorganic vapor phase epitaxy method, sol-gel method, laser ablation method and the like.
[0003]
In order to use the LiNbO 3 thin film as the core of the optical waveguide, it is necessary to use a material having a refractive index lower than that of LiNbO 3 as a cladding layer and to form the LiNbO 3 thin film thereon. Conventionally, a sapphire substrate having a lattice match with a LiNbO 3 crystal and having a low refractive index has been mainly used.
[0004]
Recently, the possibility of a micro optical circuit focusing on a high refractive index difference between silicon and SiO 2 has been pointed out. In order to incorporate a LiNbO 3 thin film into such a system and use it as a functional element component using the electro-optic effect or nonlinear optical effect, on a quartz substrate or SiO 2 film having a refractive index lower than that of a LiNbO 3 crystal, It is necessary to form an alignment film of LiNbO 3 .
[0005]
[Problems to be solved by the invention]
However, in order to form a LiNbO 3 oriented film on a quartz substrate or a SiO 2 film having a refractive index lower than that of the LiNbO 3 crystal, there are the following problems. That is, since SiO 2 is originally amorphous, it cannot be expected to grow epitaxially on a sapphire substrate. However, the use of ECR sputtering, originally on Si substrates without LiNbO 3 lattice matched, and LiNbO 3 thin film having both excellent crystallinity and orientation can be obtained. This point is described in the following document.
Literature 1: Japanese Patent Application No. 2002-118713 LiNbO 3 thin film formation method; Akazawakata, Masaru Shimada H14 / 04/22
[0006]
However, when the same conditions as the film formation on the Si substrate are applied to the growth on the SiO 2 film, there is a problem that a LiNbO 3 thin film having sufficient crystallinity and orientation cannot be obtained.
[0007]
The present invention provides a method for forming a LiNbO 3 oriented thin film, which solves the above-mentioned problems and can form a LiNbO 3 thin film having sufficient crystallinity and orientation on a quartz substrate or a SiO 2 film. For the purpose.
[0008]
[Means for Solving the Problems]
In order to solve the above problems, the invention of claim 1 is directed to a method of forming a LiNbO 3 oriented thin film by an electron cyclotron resonance sputtering method using a LiNbO 3 target having a constant composition, and the temperature of the quartz substrate or the SiO 2 film (1). Forming an LiNbO 3 oriented thin film, wherein an oxygen gas is supplied in a state of 430 ° C. or higher and 490 ° C. or lower to form a LiNbO 3 thin film (2) on the quartz substrate or the SiO 2 film (1). Is the method.
According to a second aspect of the present invention, in the method for forming a LiNbO 3 oriented thin film according to the first aspect, the supply of the oxygen gas is lower than the generation of the LiNb 3 O 8 phase, and a certain amount of the surface of the LiNbO 3 target is formed. The flow rate is sufficient to keep the oxygen atom covered.
[0009]
According to the present invention, it becomes clear that an oriented film can be obtained within a very limited range of film forming conditions on SiO 2 , so that an oriented crystal thin film suitable for use as an optical thin film can be obtained. became.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described in detail with reference to the drawings. In this embodiment, a LiNbO 3 thin film 2 is formed on a SiO 2 film 1 as shown in FIG.
[0011]
The optimum temperature when a LiNbO 3 thin film is formed on a Si substrate by ECR sputtering is 530 ° C. as described in the above-mentioned document 1. At this temperature, an oriented crystal thin film cannot be obtained with the SiO 2 film, and the cause thereof was examined below.
[0012]
FIG. 2 shows the depth distribution of each element in a sample of a LiNbO 3 thin film having a thickness of 360 nm formed on a SiO 2 film 1 having a thickness of 140 nm under the conditions of a substrate temperature of 460 ° C. and an oxygen partial pressure of 1.2 mPa. Is the result of measuring by secondary ion mass spectrometry. The distribution of Li atoms sharply falls at the interface 3 between the LiNbO 3 thin film 2 and the SiO 2 film 1 although the pile-up 3A is seen near the LiNbO 3 / SiO 2 interface 3 (depth 460 nm). Similarly, the distribution of Nb atoms also drops by almost two digits at the interface 3 between the LiNbO 3 thin film 2 and the SiO 2 film 1. Therefore, at the substrate temperature of 460 ° C., the LiNbO 3 thin film 2 and the SiO 2 film 1 are basically separated at the interface. As a result, a good orientation crystal thin film can be obtained.
[0013]
On the other hand, FIG. 3 shows the results under conditions of a film forming temperature of 530 ° C. and an oxygen partial pressure of 1.2 mPa. From the results of FIG. 3, it can be seen that the distribution of Li atoms and Nb atoms is only gently lowered even in a region deeper than the interface between the LiNbO 3 thin film and the SiO 2 film and diffuses into the SiO 2 film. The concentration of Si atoms in the LiNbO 3 film is about two orders of magnitude higher than that in FIG. 2, and diffuses from the SiO 2 film and reaches the surface of the LiNbO 3 thin film. Thus, it is desperate that the LiNbO 3 / SiO 2 interface being drastically affected greatly affects the orientation of the LiNbO 3 thin film. During the sputtering method in which film formation is performed under the electric field generated by plasma, it is assumed that such interdiffusion phenomenon of Si, Li, and Nb atoms occurs more significantly than the effect of mere heating. . As a result, a good orientation crystal thin film cannot be obtained.
[0014]
On the contrary, when the substrate temperature is further lower than 460 ° C., the crystallinity of the LiNbO 3 thin film 2 is deteriorated. Thus, in order to obtain a LiNbO 3 oriented crystal thin film, a substrate temperature around 460 ° C. is optimal. It can also be seen that the crystallinity or orientation deteriorates even if the substrate temperature deviates even slightly from around 460 ° C.
[0015]
Similarly, optimum conditions exist for oxygen partial pressure. If the oxygen partial pressure is too high, desorption of Li 2 O molecules from the LiNbO 3 thin film 2 once formed is promoted, and a LiNb 3 O 8 phase is generated. On the other hand, if the oxygen partial pressure is too low, the target surface is in an oxygen deficient state, and polycrystalline LiNbO 3 grows. Therefore, the oxygen partial pressure must be high enough to cover the target surface with a certain amount of oxygen atoms, and low enough that only a single phase of LiNbO 3 can be obtained.
[0016]
With the substrate temperature and oxygen partial pressure described above, it is possible to obtain the LiNbO 3 thin film 2 which is a LiNbO 3 crystal thin film highly oriented in the <001> direction on the SiO 2 film.
[0017]
【Example】
Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention is not limited to the examples. FIG. 4 shows an X-ray diffraction spectrum of the LiNbO 3 thin film (thin film 350 nm) continuously formed on the SiO 2 film by the ECR plasma sputtering method. A mixed gas of argon and oxygen was used as a sputtering gas, and based on the experimental results described in the embodiment, a LiNbO 3 thin film was continuously grown under the conditions of an oxygen flow rate of 0.5 sccm and a substrate temperature of 460 ° C.
[0018]
In addition to <004> reflection (69.5 °) from the Si substrate, <006> reflection (38.9 °), <00 12 > reflection (83.) indicating that the LiNbO 3 thin film is C-axis oriented. Only 5 °) is observed. From the change of <006> reflection point intensity when the substrate temperature shown in FIG. 5 is changed, it can be seen that the crystallinity becomes maximum at 460 ° C. Below 460 ° C., the lower the substrate temperature, the lower the crystallinity and the <006> reflection point intensity decreases. Above 460 ° C., it is considered that the intensity of the <006> reflection point decreases due to the collapse of the composition due to the diffusion of Li atoms and the expansion of the displacement of the orientation due to the increased roughness of the interface. Since the temperature at which crystallization starts from the amorphous state is 430 ° C., film formation is possible in the range of 430 to 490 ° C., but the substrate temperature of 440 to 490 ° C. is a temperature that can be practically used for film formation.
[0019]
On the other hand, regarding the oxygen flow rate, it can be seen that the orientation and crystallinity are maximized at 1 mPa from the change in <006> reflection point intensity when the oxygen partial pressure shown in FIG. 6 is changed in the range of 0 to 8 mPa. . Practically, it can be seen that 1 to 3 mPa can be used for film formation. This optimal oxygen gas partial pressure depends on the exhaust speed of the apparatus, the power of the microwave input to the ion source, and the voltage applied to the target, and therefore differs depending on the apparatus used. However, what can be said in common is that the orientation / crystallinity decreases at a high oxygen partial pressure because the separation of LiO 2 molecules is promoted, and the orientation / crystallinity at an oxygen partial pressure lower than 1 mPa. The reason for the decrease is that the inside of the LiNbO 3 thin film to be deposited becomes oxygen deficient.
[0020]
The embodiments and examples of the present invention have been described in detail above, but the specific configuration is not limited to the embodiments and examples, and design changes and the like without departing from the scope of the present invention. Is included in the present invention. For example, in the embodiment and examples of the embodiment, although the LiNbO 3 thin film having an orientation and crystallinity taken as an example a case where formed on the SiO 2 film, LiNbO 3 to SiO 2 film as well as a quartz substrate A thin film may be formed.
[0021]
【The invention's effect】
As described above, according to the present invention, it becomes clear that an orientation film of LiNbO 3 can be obtained on a SiO 2 film or a quartz substrate within a very limited range of film formation conditions. An oriented crystal thin film suitable for use as a general thin film can be obtained.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a LiNbO 3 thin film formed on a SiO 2 film according to an embodiment of the invention.
FIG. 2 shows the depth distribution of each element by secondary ion mass spectrometry of a LiNbO 3 thin film formed on a SiO 2 film under the conditions of a substrate temperature of 460 ° C. and an oxygen partial pressure of 1.2 mPa by ECR sputtering. FIG.
FIG. 3 shows the depth distribution of each element by secondary ion mass spectrometry of a LiNbO 3 thin film formed on a SiO 2 film under conditions of a substrate temperature of 530 ° C. and an oxygen partial pressure of 1.2 mPa by ECR sputtering. FIG.
FIG. 4 is a diagram showing an X-ray diffraction θ-2θ spectrum of a LiNbO 3 thin film formed on a SiO 2 film by ECR sputtering under conditions of a substrate temperature of 460 ° C. and an oxygen partial pressure of 1.2 mPa.
FIG. 5 is a diagram showing the substrate temperature dependence of the <006> reflection point of a LiNbO 3 thin film formed by ECR sputtering.
FIG. 6 is a graph showing the oxygen partial pressure dependence of the <006> reflection point of a LiNbO 3 thin film formed by ECR sputtering.
[Explanation of symbols]
1 SiO 2 film 2 LiNbO 3 thin film 3 LiNbO 3 / SiO 2 interface

Claims (2)

定組成のLiNbＯ３ターゲットを用いた電子サイクロトロン共鳴スパッタリング法によるLiNbＯ３配向性薄膜形成方法において、
石英基板もしくはSiＯ２膜（１）の温度が４３０℃以上４９０℃以下の状態で酸素ガスを供給して、前記石英基板もしくは前記SiＯ２膜（１）上にLiNbＯ３薄膜（２）を形成することを特徴とするLiNbＯ３配向性薄膜形成方法。In a method for forming a LiNbO 3 oriented thin film by electron cyclotron resonance sputtering using a constant composition LiNbO 3 target,
An oxygen gas is supplied in a state where the temperature of the quartz substrate or the SiO 2 film (1) is not lower than 430 ° C. and not higher than 490 ° C. to form the LiNbO 3 thin film (2) on the quartz substrate or the SiO 2 film (1). A method of forming a LiNbO 3 oriented thin film characterized by the above. 前記酸素ガスの供給は、LiNb３Ｏ８相が生ずるよりも低く、かつ、前記LiNbＯ３ターゲット表面を一定量の酸素原子が覆った状態を保つのに十分な流量にすることを特徴とする請求項１に記載のLiNbＯ３配向性薄膜形成方法。The supply of the oxygen gas is lower than that in which a LiNb 3 O 8 phase is generated, and a flow rate sufficient to maintain a state where a certain amount of oxygen atoms cover the surface of the LiNbO 3 target. Item 2. The method for forming a LiNbO 3 oriented thin film according to Item 1.
JP2003037803A 2003-02-17 2003-02-17 LiNbO3 oriented thin film forming method Expired - Fee Related JP4023677B2 (en)

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