JP4022619B2

JP4022619B2 - Annealing treatment, apparatus and system

Info

Publication number: JP4022619B2
Application number: JP2002381085A
Authority: JP
Inventors: 智安藤; 篤一山本; 光寿松下; 利和吉川
Original assignee: Showa Shinku Co Ltd
Current assignee: Showa Shinku Co Ltd
Priority date: 2002-12-27
Filing date: 2002-12-27
Publication date: 2007-12-19
Anticipated expiration: 2022-12-27
Also published as: JP2004211948A

Description

【０００１】
【発明の属する技術分野】
本発明は、真空中で加熱処理を行うアニール装置及びアニール方法に関するものである。
【０００２】
【従来の技術】
水晶振動子は一般的に、人工水晶の結晶体を切断し研磨する工程と、研磨した結晶体に電極膜を付して振動子を構成する第１の蒸着工程と、振動子をケースに組み込む工程と、前記電極膜を安定化する為の第１のアニール工程と、振動子の周波数を調整する第２の蒸着工程と、周波数調整を行った電極膜を安定化する為の第２のアニール工程と、振動子を収納したケースを封止する工程とにより製造される。
【０００３】
従来の製造方法では、上記アニール工程は、図９に示すバッチ式のアニール装置により行われていた。バッチ式のアニール装置は一般的に縦型であり、真空槽１００内部には処理対象物である基板１０１を収容する複数段の棚１０２と加熱手段が設けられる。各棚１０２に複数の振動子を充填した基板１０１を配置し、図示しない真空ポンプにより真空排気した後、加熱手段を用いて所定時間加熱処理を行い、ガス導入系１０３によりガスを導入して大気圧に開放し処理を終了していた。
【０００４】
【発明が解決しようとする課題】
図９に示すアニール装置は、複数枚の基板を同時に一括処理するバッチ式装置である為、アニール処理の前後工程である蒸着工程やケースへの組み込み工程、ケース封止工程を行う処理装置（基板を１枚ずつ処理する）との間で基板のやり取りするのに時間がかかりシステム全体のスループット向上が難しいという問題があった。
【０００５】
上記問題に関して、枚葉式処理部とバッチ式処理部とをインライン化して一貫した連続処理を可能とする処理システムが提案されている。図１０は、特開平７−１３７８０３号公報に開示される処理システムを用いたアニール装置の概略図である。
【０００６】
アニール処理を行う熱処理部１１０は、基板の受け渡しを行うインターフェイス部１１１を介して枚葉式処理部１１２に接続される。熱処理部１１０は縦型の加熱炉１１３とボート移載室１１４で構成され、ボート移載室１１４には搬送アーム１１５が設けられている。枚葉式処理を終えた基板１０１はインターフェイス部１１１において複数枚の基板１０１を収容するボート１１６に多数枚装填される。ボート１１６に1ロット分（加熱炉１１３で一度に処理を受けるべき基板１０１の枚数）が装填されると、インターフェイス部１１１からボート移載室１１４へボート１１６が搬送される。搬送アーム１１５によりボート移載室１１４から加熱炉１１３の中へ第１のボートが挿入され基板１０１の加熱処理が施される。この間枚葉式処理部１１２では基板１０１が１枚ずつ処理を施され、インターフェイス部１１１に順次多段に収容される。これにより第１のボート１１６が加熱処理を終了したときには、第2のボート１１６が１ロット分収容されており、順次アニール処理が施される。
【０００７】
同公報に開示される処理システムは、半導体製造装置に関するものである為各装置の構成は異なるが、１枚ずつ行う基板処理と複数枚を一括して行う基板処理を連続して行う点で水晶振動子の製造と同一である。しかし、水晶振動子の製造過程においては、振動子をケースに組み込む工程等大気中で行われる工程もある為、上記のような連続処理システムを応用できない場合もある。
【０００８】
この場合、処理対象物である振動子が大気に晒される為周波数変動が生じ、大気に晒される時間も振動子毎に異なる為周波数の変動値も一定ではないという振動子の品質管理上の問題が解消されない。
【０００９】
更に、上記公報に開示される処理システムを用いた場合、基板を１枚ずつ処理する装置と複数枚の基板を一括処理する装置との間で一貫した連続処理を行う事が可能となるが、１枚ずつ処理を終了する基板がバッチ式アニール装置に収容できる数だけ溜まってからアニール処理が開始される為、バッチ式アニール処理装置でアニール処理が開始されるまでの間に基板の待ち時間ができ、生産性に大きな影響を与えていた。これは、アニール工程の後工程が１枚ずつ行う基板処理の場合にも同じ様に影響を与え、複数枚の基板が同時にアニール工程を終了する為、アニール工程を終えても次工程に進むまでの間に基板に待ち時間ができるという問題があった。
【００１０】
更に、図９に示すアニール装置は、複数枚の基板の加熱及び冷却を常温から同時に一括して行う為、基板の昇温及び降温に時間を要するという問題があった。
【００１１】
ここで、基板の昇温及び降温時間を短縮する為に基板の予備加熱手段及び冷却手段を備えた従来のアニール装置について図１１を参照に説明する。同図に示すアニール装置は、特開平９−２７５０８０号公報に開示されるものであり、アニールチャンバー内に予備加熱ヒーターと冷却手段を設けることを特徴とする。
【００１２】
同図に示す装置は、基板投入用チャンバー１２０と、搬送チャンバー１２１，１２３と、アニールチャンバー１２２と、基板取出し用チャンバー１２４により構成され、アニールチャンバー１２２内には予備加熱ヒーター１２５と、アニール処理手段１２６と、冷却手段１２７とを備えるものである。
【００１３】
以下動作について説明する。まず、基板投入用チャンバー１２０内のカセット１２８に多数の未処理の被処理基板を収容し、搬送チャンバー１２１を介して基板を1枚ずつアニールチャンバー１２２内に搬送する。アニールチャンバー１２２内では基板の予備加熱、アニール処理、冷却を行い、搬送チャンバー１２３を介して基板取出し用チャンバー１２４のカセット１２９に被処理基板を収容する。
【００１４】
同公報に記載のアニール装置を用いた場合、アニールチャンバー１２２内に予備加熱ヒーター１２５及び冷却手段１２７を設けることで、基板の昇温及び降温時間を短縮することが可能になり、短いアニール処理時間でも所望の薄膜が得られるようになるが、基板を1枚ずつアニール処理する為、アニール処理時間を長時間必要とする場合には非常に生産性が低くなり、上記装置を用いることは現実的ではないという問題がある。
【００１５】
本発明は、複数枚の基板を一定時間収容処理するバッチ式アニール装置の生産性を保ちながらも基板の待ち時間を作らずにアニール処理の前後工程を行う処理装置と接続可能であり、更に基板の昇温及び降温時間を短縮する生産性の高いアニール装置を提供する事を目的とする。
【００１６】
【発明の概要】
本発明は上記問題を解決する為、アニール装置に複数段の棚を昇降自在に設け、複数段の棚に順次基板を収容処理することにより、基板の搬出入は１枚ずつ一定間隔で行いながらも、アニール処理は複数枚を平行して行うものである。又、装置を仕込室、アニール室、取出室の３室構成とし、加熱処理を施すアニール室の左右に、昇温時間を短縮する予備加熱機構を備えた仕込室と、降温時間を短縮する急冷機構を備えた取出室設け、基板を１枚ずつ予備加熱及び冷却することにより、基板の昇温及び高温を短時間に行うものである。
【００１７】
具体的に、本装置アニール室は、基板の加熱手段と、基板を収容する複数段の棚を設けた基板ストッカーと、基板ストッカーの昇降手段とを具備し、仕込室から搬入されてくる基板を、前記加熱手段を用いて設定温度に加熱された基板ストッカー内へ、前記昇降手段を駆動して１枚ずつ連続的に搬入し、基板ストッカー内で加熱処理後、所定加熱時間に達した基板から前記昇降手段を駆動して１枚ずつ所定間隔をおいて連続的に取出室へ搬出することを特徴とする。
【００１８】
又、本装置仕込室は、基板を予備加熱手段によって所定温度迄加熱後、一定間隔でアニール室へ搬送することを特徴とし、本装置取出室は、アニール処理を施された基板を強制冷却手段によって１枚ずつ所定温度迄急冷することを特徴とする。
【００１９】
上記アニール装置は、アニール工程の前後工程を行う処理装置に接続してインライン化することも可能である。この場合、本発明アニール装置は、前工程を行う処理装置から１枚ずつ搬送される基板を順次搬入し、所定時間の処理を終了した基板を次工程を行う処理装置に１枚ずつ順次搬出する。このとき接続する処理装置は真空中で処理を行う装置でも大気中で処理を行う装置でも構わない。
【００２０】
本発明では、バルブの開閉動作、基板の搬入・搬出、ストッカー移動（昇降）手段、真空排気動作、及び加熱動作はあるタイミングスケジュールで行われるが、それぞれの動作は制御装置（プロセッサ）にプログラムされた内容で、制御装置の指令によりシステム制御される。
【００２１】
【実施例の説明】
構成
図１は本発明アニール装置の横断面を示す概略図であり、図２は縦断面を示す概略図である。本装置は、中央に設置されたアニール室２と左右に設置された仕込室１、取出室３を有して構成され、各室は開閉可能なゲートバルブ１３，１４を有する口１７と１９で連結されている。
【００２２】
基板６は仕込室１から搬入され、アニール室２でアニール処理を施された後、取出室３から搬出される。
【００２３】
本実施例では、図８（a）に示すトレー７０に複数の振動子を充填したものを基板６として搬送するが、本発明装置の処理対象となる基板６は同図に示すトレー７０に限られるものではなく、他の物品でもよい。トレー７０には、例えばＡｌの様な熱容量の小さい材料を用いることで、充填した振動子の昇降温を短時間に行うことが可能となる。
【００２４】
仕込室１は基板６の搬入を行う入口１６と搬出を行う出口１７とを有し、出入口１６，１７にはゲートバルブ１２，１３がそれぞれ開閉自在に設置されている。基板６の搬入及び搬出は１枚ずつ一定間隔で繰り返し行われる。基板６は仕込室１の出口１７からアニール室２に搬出されるが、常温の基板６をアニール室２へ搬送した場合目的の温度まで基板６を上昇させるのに時間を要してしまう為、仕込室１において基板６の予備加熱を行う。仕込室１には予備加熱機構として、図２に示す複数のハロゲンランプ４と、ハロゲンランプ４の熱を効率よく基板６に伝える為のリフレクター５を設置する。リフレクター５は、基板６と同等かそれ以上の大きさにすることで基板６の温度の均一性を向上させることが可能となる。本実施例では、予備加熱機構としてハロゲンランプ４を用いているが、他の構成を用いてもよい。
【００２５】
仕込室１における処理手順について以下に説明する。
【００２６】
まず、入口１６から基板６を搬入し、図示しない真空ポンプにより仕込室１内部を真空排気する。次に搬入した基板６をハロゲンランプ４の下部に搬送し、ハロゲンランプ４により基板６の予備加熱を行う。予備加熱は一定時間行い、予備加熱を終了した基板６を出口１７からアニール室２へ搬出する。次に図示しないリーク弁により仕込室１内部を大気圧に開放し、再び入口１６から基板６を搬入して上記作業を繰り返す。基板６の搬出入は、ゲートバルブ１２，１３の開閉により行われるが、ゲートバルブ１２，１３は基板搬送直前に開き、直後に閉じるものとする。ゲートバルブ１２〜１５は開閉可能であって、その開閉のタイミングは制御装置１００により制御されている。又基板６を１つの室から他の室へ搬送する手段（不図示）を含み、該搬送手段の動作は制御装置１００で制御され、基板の所定の搬送がなされる。
【００２７】
アニール室２は基板６の搬出入を行う入口１８と出口１９とを有し、アニール室２の入口１８は仕込室１の出口１７に接続される。
【００２８】
図２に示すように、アニール室２には基板ストッカー２２が昇降自在に設けられ、基板６は基板ストッカー２２の各棚に１枚ずつ収容される。本実施例では基板ストッカー２２の昇降手段としてエレベータ機構７を取り付ける。エレベータ機構７は、基板ストッカー２２の下部領域に設けられ、基板ストッカー２２を支える支持板と、支持板の昇降を行う駆動装置により構成される。
【００２９】
基板ストッカー２２は、図３に示すように基板６が装填される複数の基板収容棚３０と、最上段に設けられた補助棚３１により構成される。各棚にはシースヒーター３２が設けられ、ヒーター３２の熱により基板６のアニール処理を行う。最上段に補助棚３１を設けるのは、装填された基板６を全て同条件で加熱する為であり、全ての基板６は自身が装填される棚の下部に設けられたヒーター３２と、その上段の棚の下部に設けられたヒーター３２により効率良くアニール処理が施される。本実施例では、基板６にアニール処理を施す加熱機構としてシースヒーター３２を採用しているが、他の加熱機構を用いてアニール処理を施してもよい。基板ストッカー２２には各棚に対応した複数の熱電対を設け、熱電対の測定温度を基に各シースヒーター３２の加熱コントロールを行う。しかし熱電対を各棚に設けると配線が複雑になる場合等は、ヒーター３２を複数のブロックに区分し、ブロック毎に熱電対を設けて各棚の温度制御を行ってもよい。温度制御は、ON-OF制御を用いてもPID制御を用いてもよい。ON-OF制御はONとOFを繰り返すことで所望の温度曲線に近づけるのに対し、PID制御は設定値と制御量の間の偏差に比例して操作量を上下させる比例動作P、偏差の継続時間に応じて操作量を上下させる積分動作I、偏差の変化具合に応じて操作量を上下させる微分動作Dの３つの動作を組み合わせた制御である為、本実施例ではPID制御を用いて精度よくアニール室の温度制御を行うものとする。
【００３０】
加熱機構であるヒーターは経時変化によって交換を余儀なくされる事が考えられるが、その場合は図1及び図2に示すようにメンテナンス用扉８を装置前面に設けることにより、メンテナンス時の作業性の向上を図ることが出来る。
【００３１】
アニール室２は、加熱機構により全体が高温に晒される為、アニール室外壁を冷却する必要が求められる。又、メンテナンス用扉８、ゲートバルブ１３，１４等に取付いている図示しないパッキンは、高温に晒されることによる影響が大きい為、特に冷却の必要がある。そこで、本実施例ではアニール室２の壁を２重構造にして、その間に冷却水を流すことで、壁全体を冷却する事を可能としている。
【００３２】
次に、アニール室２における処理手順について以下に説明する。
【００３３】
アニール室２は常に真空状態にあって、基板ストッカー２２に設けたヒーターは常にオンにしておく。又、基板６の搬出入時アニール室２に隣接する仕込室１及び取出室３は常に真空状態にしておく。
【００３４】
まず、エレベータ機構７により基板を搬入する収容位置であるストッカーの空いた棚をアニール室２の入口位置に整列し、仕込室１から搬出された基板６の受渡しを行う。基板６は、エレベータ機構７により基板ストッカー２２を上下させることで空いている棚に順次収容し、アニール処理を施す。
【００３５】
本発明でアニール室２に基板ストッカー２２を設けることにより、仕込室１から一定間隔で順次搬入される基板６をアニール室２に一定時間保存処理する事が可能となる。基板のアニール処理時間は、基板収容棚３０の数と、基板搬送の間隔により決定される為、棚数と搬送間隔は目的に合わせて調整する。又、装置を効率良く利用する為、基板ストッカー２２が常に満たされた状態となるように基板収容棚３０の数を設けることが望ましい。例えば基板６が１０分間隔で搬送され、所望のアニール処理時間が１２０分間である場合、基板収容棚３０を１２段設ければよい。これにより、アニール室２へ１０分間隔で搬入された基板６は、１２０分間のアニール処理を行った後、１０分間隔で順次取出室３へ搬出される為、アニール室２の基板ストッカー２２は常に満たされた状態となっている。
【００３６】
所定時間のアニール処理を施した基板６は、搬入同様エレベータ機構７により基板ストッカー２２を上下させることで、出口１９から取出室３に搬出する。アニール室２への基板６の搬出入は、出入口１８，１９位置で行われるが、本発明でエレベータ機構７により基板ストッカー２２の複数段の棚を上下させることにより、任意の棚への基板の搬出入が可能となる。
【００３７】
取出室３は基板の搬出入を行う入口２０と出口２１を有し、出入口にはゲートバルブ１４，１５がそれぞれ開閉自在に設置されている。取出室の入口２０はアニール室の出口１９に接続され、アニール処理を終了した基板６が取出室３に順次搬入される。基板６の搬出入は仕込室１及びアニール室２同様１枚ずつ一定間隔で繰り返し行われる。
【００３８】
アニール室２で高温に加熱された基板６は、一定時間をおいて順次取出室３に搬送される為、取出室３では一定時間内に基板６を冷却する事が求められる。一定時間内の真空中での自然冷却では基板６の温度降下は期待できない為、取出室３では基板６の強制急冷を行う。取出室３には基板６の強制急冷の為に、冷却機構を設ける。冷却機構は、図４に示すように冷却板９と、冷却板の昇降装置１１と図１に示すガス導入系１０により構成される。
【００３９】
冷却板９は例えば銅板のような熱伝導率の高い板に水路４０を設け、水路４０に冷却水を流したものである。同図において昇降装置１１はシリンダーを指し、圧縮空気の導入と放出を行うことで冷却板９の昇降を行う。冷却板９及び昇降装置１１は他の構成を用いてもよい。
【００４０】
次に、取出室３における強制急冷の手順について以下に説明する。まず、図示しない真空ポンプにより取出室３内部を真空排気した後、アニール室２から取出室３へ基板６の搬送を行う。次に取出室３に搬入した基板６を冷却板９の真上に搬送し、冷却板９を昇降装置１１により上昇させ基板６に接触させる。同時にガス導入系１０により取出室３に不活性ガスを導入することで基板６の強制冷却を行う。強制冷却は予備加熱同様一定時間行い、１枚目の基板６が取出室に搬入されてから２枚目の基板６が搬入されるまでの間に１枚目の基板６の強制冷却及び取出室３からの基板６の搬出、取出室３の真空排気を全て終了させる。仕込室１同様基板６の搬出入は、ゲートバルブ１４，１５の開閉により行い、ゲートバルブ１４，１５の開閉は基板搬送後すぐに行うものとする。
【００４１】
図７は基板ストッカー２２の基板収容棚３０を１２段設けた場合の本装置動作説明図である。以下同図を参照に基板を１０分間隔で搬送する場合について説明する。
【００４２】
まず、仕込室１に１枚目の基板６ａを搬入し、予備加熱を行う（ａ）。１０分後基板６ａをアニール室２に搬送し、２枚目の基板６ｂを仕込室１に搬送する（ｂ）。基板６ａはアニール室２に搬入されると同時にアニール処理が開始される。更に１０分後、２枚目の基板６ｂをアニール室２に搬入し、３枚目の基板６ｃを仕込室１に搬入する（ｃ）。同様に１０分毎に基板６ｃ〜６ｌを順次アニール室２へ搬入していく（ｄ）（ｅ）。１２枚目の基板６ｌがアニール室２に搬入されてから１０分後、１枚目の基板６ａは１２０分間のアニール処理を終了するので、１枚目の基板６ａを取出室３に搬出し、１３枚目の基板６ｍをアニール室２に搬入し、１４枚目の基板６ｎを仕込室１に搬入する（ｆ）。この時１３枚目の基板６ｍは、基板６ａを収容していた棚に搬入する。更に１０分後２枚目の基板６ｂが１２０分間のアニール処理を終了するので、２枚目の基板６ｂを取出室３に搬出し、１４枚目の基板６ｎをアニール室２に１５枚目の基板６ｏを仕込室１に搬入する（ｇ）。以下は同様の作業を繰り返す。
【００４３】
上記説明では１枚目から１１枚目までの基板は、アニール室２内の基板ストッカー２２が満たされない状態で処理が行われるが、装置動作開始時、アニール室２にダミー基板を１１枚装填しておき、アニール室２が常に満たされた状態となるようにしてもよい。アニール室への基板６の出し入れ搬送時バルブ１３と１４は開放されて、アニール室と仕込室と取出室は連結できるが、このときは仕込室と取出室は真空にされている。バルブ１２、１３、１４、１５の開閉、仕込室１、アニール室２及び取出室での基板の搬送、ストッカーの昇降及び真空排気それぞれを動作させるアクチュエータ及び搬送手段（不図示）は、制御装置１００の制御の下に所望のタイミングで作動される。即ち、制御装置は所望のタイミングでの作動を行うようプログラムされている。
【００４４】
即ち、仕込室１で所定の予備処理時間だけ予備処理された基板６ｍ（物品）を順次アニール室２に搬入し、アニール室２内の複数の物品収容位置を有するストッカー２２内に複数の物品６ａ〜６ｌを収容し、アニール室２内で所定のアニール時間だけアニールが完了した物品を順次アニール室２から搬出しているが、（ａ）所定の予備処理時間毎に予備処理された物品をアニール室内のストッカーの空き収容位置に収容すると共に、所定のアニール時間だけアニールされてしまっている物品をストッカー２２から取り出してアニール室２外へ搬出してストッカー２２に空き収容位置をつくり、そして（ｂ）該工程（ａ）の後に該所定の予備処理時間だけストッカー２２内の物品をアニールし、その後該工程（ａ）と（ｂ）をくり返している。この所定のアニール時間は所定の予備処理時間より長い。物品のアニール中、アニール室２は真空に維持され、アニール室２への物品の搬入と搬出の前記工程（ａ）の際、該アニール室の該搬入の口と搬出の口の外側の雰囲気は真空にされている。又、アニールは物品６の搬入・搬出の際も連続的に行われている。
【００４５】
上述してきたシステムは、真空中で物品を加熱処理するシステムであって、仕込室１、アニール用加熱室２及び取出室３からなり、仕込室１と加熱室２とは開閉可能な第１のバルブ１３を有する第１の開口１６、１７で連結され、加熱室２と取出室３とは開閉可能な第２のバルブ１４を有する第２の開口１９、２０で連結されているシステムである。そして、仕込室１の物品６を第１のバルブ１３開放時に第１の開口１６、１７から加熱室２に搬入する手段（不図示）、複数の物品収容位置を有する加熱室２内に配置されたストッカー２２、ストッカー２２の物品収容位置の少なくとも１つを第１の開口１６、１７に整列させて第１の開口１６、１７から搬入された物品６を整列された物品収容位置に収容するため、そしてストッカー２２の物品収容位置の少なくとも１つを第２の開口１９、２０に整列させて第２の開口１９、２０から整列された物品収容位置の物品を搬出するためストッカー２２を移動させる手段（図２、７）、加熱室２の物品６を第２のバルブ１４の開放時に第２の開口１９、２０から取出室３に搬出する手段（不図示）、及び搬入する手段、搬出する手段、ストッカー移動手段及び第１と第２のバルブの作動を制御する制御装置１００とからなる。この制御装置１００は、所定の搬入間隔時間の間隔毎（例えば上述の１０分間隔）に第１のバルブ１３を開放させ、物品６を仕込室１から第１の開口を介して加熱室２へと搬入するよう第１のバルブ１３と搬入手段を制御する第１の制御を行い、第１の開口を介して加熱室２への物品６の搬入時にストッカー２２の空き物品収容位置が第１の開口に整列するようストッカー移動手段７を制御する第２の制御を行い、ストッカー２２に収容されている複数の物品の少なくとも１つが所定の加熱時間（例えば上述の１２０分間）だけ加熱完了された時に、加熱完了した物品６の収容位置を第２の開口に整列するようストッカー移動手段７を制御する第３の制御を行い、ストッカー２２の加熱完了物品の収容位置が第２の開口に整列された時に、物品を加熱室２から第２の開口を介して取出室３へと搬出してストッカー２２に空き物品収容位置をつくるよう第２のバルブ１４と搬出手段を制御する第４の制御を行っている。
【００４６】
その際、アニール（加熱）完了物品（基板）の載置されているストッカー２２の棚位置を第２の開口にストッカー移動手段７を駆動して整列して（第３の制御）、先ずストッカー２２からアニール完了物品を取出室３へ取り出して、ストッカー２２に空き棚を生じさせた（第４の制御）後、その空き棚に仕込室１からの物品を収容する場合は、第１の開口と第２の開口が同じ水平レベルに構成されていると、前述の第２の制御は行う必要がない。第３の制御後に第１の開口と空き棚は既に整列されているからである。又、本システムでは、物品の加熱室への搬入・搬出の時にもアニール加熱は継続して行われている。その際に、アニール室の真空状態を継続して維持する。第１と第２の開口が開いている間は少なくとも仕込室１と取出室３の雰囲気は真空に保たれているよう、制御装置１００は、仕込室１と取出室３の真空排気手段（不図示）を作動している。
【００４７】
本発明装置の仕込室１及び取出室３は、アニール工程の前後工程を担当する処理装置に接続しインライン化してもよい。
【００４８】
例えば、水晶振動子の製造過程において電極蒸着工程、アニール工程及びケース封止工程を連続処理する場合、蒸着装置５０と仕込室１を、取出室３とシーム溶接装置５１をそれぞれ接続する。図５はその様子を示す模式図である。以下同図を参照に本装置の接続について説明するが、本装置は連続処理可能な任意の処理装置に接続されるものであり、接続可能な装置は上記装置に限られるものではない。
【００４９】
同図において、基板６は、蒸着装置５０から仕込室１、仕込室１からアニール室２、アニール室２から取出室３、取出室３からシーム溶接装置５１へと１枚ずつ搬送され、各装置及び各部屋からの基板の搬出入は全て同ピッチで行われる。
【００５０】
本装置における処理は前記説明の通りであるが、仕込室１への接続装置が真空装置である場合は、仕込室１における真空排気と大気開放の繰り返しは省略し、仕込室１は常に真空排気した状態とする。この場合、両装置間の雰囲気が等しければ必要に応じてゲートバルブ１２は省略しても構わない。又、取出室３への接続装置が真空装置である場合は、真空排気は取出室３からの基板搬出前に行う。
【００５１】
本装置は、蒸着装置５０から１枚ずつ搬出される基板６を順次処理する事が可能となる。又、シーム溶接装置５１は、本装置取出室３から１枚ずつ搬出される基板６を順次処理する事が可能となる。つまり、本装置と前後工程を担当する処理装置を接続する事で、基板６の待ち時間を解消し、装置全体の生産性を大きく向上させる事が可能となる。
【００５２】
本装置における基板搬送の間隔や、棚の数、１枚の基板に充填する素子の数は、アニール処理の前後の工程を担当する装置のタクトタイムや所望のアニール処理時間等目的に合わせて調整する。
【００５３】
次に、本発明アニール装置内の振動子を載置した処理基板と接続装置内の振動子を載置した処理基板が異なる場合について図６を参照に説明する。この場合、移載機６０，６１を介して両装置を接続し、処理単位を整合させる。
【００５４】
蒸着装置５０内の処理基板６２と本装置の処理基板６３が異なる場合、移載機６０は、搬入された蒸着装置５０の処理基板６２上の素子を本装置の処理基板６３に充填し直し、本装置の処理基板６３を搬出する。この時、本装置各部屋における基板６３の搬出入の間隔は移載機６０から基板６３が搬出される間隔と同間隔で行う。
【００５５】
本装置の処理基板６３とシーム溶接装置５１の処理基板６４が異なる場合、移載機６１は、本装置の処理基板６３上の素子をシーム溶接装置５１の処理基板６４に充填し直す。移載機６１は、シーム溶接装置５１のタクトタイムにあわせて処理基板を搬出する。
【００５６】
図１２〜図１６に、前記説明の仕込室１、アニール室２、取出室３を用いて基板の温度変化を測定した結果を示す。図は全て縦軸に温度を表し、横軸に時間を表している。
【００５７】
測定は、アニール室内基板ストッカー２２に基板収容棚３０を１２段設け、基板６として図８（b）に示すトレー７０にダミーキャリア７１と温度測定用熱電対７２を搭載し、ダミーキャリア７１の温度変化を測定した。又、各棚を３１０℃に設定して、２７０℃±２７℃の保証温度で基板にアニール処理を行った後、基板を１５０℃以下に降温して処理を終了させる場合を想定している。
【００５８】
図１２は、仕込室１に予備加熱機構を設けずに、常温の基板６をアニール室２に搬送した際の基板上昇温度を測定したものである。
【００５９】
図１２より、常温の基板６をアニール室２に搬送した場合、基板６が保証温度下限の２４３℃に到達するまでの間に９７分を要している。
【００６０】
図１３は、仕込室１に本発明予備加熱機構を設け、予備加熱を施した基板６をアニール室２に搬送した際の基板上昇温度を測定したものである。予備加熱機構には前記説明のハロゲンランプ４とリフレクター５を用い、その他の測定条件は図１２と同一とした。横軸の時間は、アニール室２に仕込室１から基板を搬入した時点を０分としている。
【００６１】
図１３より、本発明予備加熱機構により、基板の温度は仕込室において２５０℃まで上昇し、アニール室２に搬入してから５７分で保証温度下限の２４３℃に達していることがわかる。
【００６２】
図１４は図８（b）に示すトレー７０を熱容量の小さいＡｌ製とし、その他の測定条件は図１３と同一とした際の基板の温度変化を測定したものである。
【００６３】
図１４より、図８（b）に示すトレー７０をＡｌ製とすることで、アニール室２に搬入してから保証温度下限の２４３℃に達するまでに要する時間は４０分間に短縮されることがわかる。
【００６４】
図１５はアニール室内基板ストッカー２２の基板収容棚３０を下段３段、中段６段、上段３段の３ブロックに区分し、各ブロックに設けた熱電対により各棚の温度をPID制御し、その他の条件は図１４と同一とした際の基板の温度変化を示したものである。
【００６５】
図１５より、アニール室２の温度制御を行うことで、アニール室２に搬入してから保証温度下限の２４３℃に達するまでに要する時間は１８分間まで短縮されたことがわかる。
【００６６】
これより、本発明予備加熱機構を用いて仕込室１で予備加熱を行い、基板６のトレー７０を熱容量の小さい材質とし、更にアニール室２の温度制御を行うことで、常温の基板をアニール室２に搬送する場合に比べ、アニール室２における基板収容時間を７９分短縮することが可能となり、基板のアニール処理を短時間に行うことが可能となったことがわかる。
図１６はアニール室２で２７０℃±２７℃に加熱された基板６を取出室に搬送し、基板６を強制冷却した際の基板の温度変化を測定したものである。横軸の時間は、アニール室２から取出室３に基板を搬出した時点を０分としている。
【００６７】
取出室３には本発明急冷機構を設け、急冷機構には上記説明の冷却板９とガス導入系１０用い、不活性ガスとしてＨｅガスを導入した。
【００６８】
同図は、本発明冷却板のみ用いた際の温度変化を（a）に、冷却板９を用い更にＨｅガスの導入を行った際の温度変化を（b）に示している。
【００６９】
（a）より、本発明冷却板９を用いることで、取出室３に搬入してから２３分で基板温度を１５０℃まで低下させることが可能になる。（b）より、冷却板９に加えてＨｅガスを導入することにより２分１０秒で基板を１５０℃まで低下させることが可能となり、更に降温時間が短縮されることがわかる。
【００７０】
図１２〜図１６より、本発明予備加熱機構、急冷機構を用いることで、アニール工程に要する処理時間を減少させ、装置の生産性を向上させることが可能となったことがわかる。
【００７１】
他の実施例の説明、他の用途への転用例の説明
上記実施例では、図５に示す実施形態として本発明装置の仕込室及び取出室に連続処理を行う装置を直接接続する場合を、図６に示す実施形態として仕込室及び取出室に連続処理を行う装置を移載機を介して接続する場合を説明したが、本装置の仕込室にのみ移載機を接続しても、取出室にのみ移載機を接続してもよい。
【００７２】
上記実施例では、仕込室及び取出室に収容される基板は１枚であるが基板が複数枚であってもよく、仕込室において基板をより高温に上昇させたい場合や取出室において基板をより低温に冷却したい場合には、予備加熱の為のハロゲンランプ、強制冷却のための冷却板を複数個並列に設けてもよい。
【００７３】
【発明の効果】
本発明でアニール室に複数段の棚を昇降自在に設けた事により、任意の棚への基板の搬出入が可能となり、一定間隔で順次搬入される基板をアニール室に一定時間保存し処理する事が可能となる。これにより、アニール室において複数枚の基板を同時に処理しながらも、前後工程を担当する処理装置に直接接続する事が可能となり、生産ラインにおける基板の待ち時間を無くし、装置の生産性を著しく向上することが可能となる。
【００７４】
又、仕込室に予備加熱機構、取出室に急冷機構を設け、基板の予備加熱及び急冷を１枚ずつ行う為、短時間で加熱、冷却することが可能となり、アニール装置における基板の昇温及び降温時間を著しく短縮することができ、装置の生産性向上に更に貢献する。
【００７５】
更に、アニール室に設けたエレベータ機構により、連続して送られてくる処理対象物を空間に効率より収納でき、装置をコンパクトにする事が可能になるという効果を奏する。
【図面の簡単な説明】
【図１】本発明アニール装置の横断面と制御システムを示す概略図
【図２】本発明アニール装置の縦断面を示す概略図
【図３】基板ストッカーの構成を示す説明図
【図４】冷却板と昇降装置を示す概略図
【図５】本発明アニール装置の接続を示す模式図
【図６】移載機を介した本発明アニール装置の接続を示す模式図
【図７】本発明アニール装置動作説明図
【図８】（a）本発明トレー説明図（b）基板温度測定用ダミーキャリア説明図
【図９】従来のバッチ式アニール装置の概略図
【図１０】特開平７−１３７８０３号公報に開示される従来の処理システムを用いたアニール装置の概略図
【図１１】特開平９−２７５０８０号公報に開示される従来のアニール装置の概略図
【図１２】常温の基板をアニール室に搬送した際の基板温度実測データ
【図１３】本発明予備加熱機構により予備加熱を行った基板をアニール室に搬送した際の基板温度測定データ
【図１４】本発明基板のトレーを熱容量の小さいAl製として予備加熱を行った際の基板温度測定データ
【図１５】本発明アニール室を温度制御した際の基板温度測定データ
【図１６】本発明急冷機構により強制冷却を行った際の基板温度測定データ
【符号の説明】
１仕込室
２アニール室
３取出室
４ハロゲンランプ
５リフレクター
６基板
７エレベータ機構
８メンテナンス用扉
９冷却板
１０ガス導入系
１１昇降装置
１２ゲートバルブ
１３ゲートバルブ
１４ゲートバルブ
１５ゲートバルブ
１６仕込室入口
１７仕込室出口
１８アニール室入口
１９アニール室出口
２０取出室入口
２１取出室出口
２２基板ストッカー
３０基板収容棚
３１補助棚
３２シースヒーター
４０水路
５０蒸着装置
５１シーム溶接装置
６０移載機
６１移載機
６２蒸着装置処理基板
６３本装置処理基板
６４シーム溶接装置処理基板
７０トレー
７１ダミーキャリア
７２熱電対
１００真空槽
１０１基板
１０２棚
１０３ガス導入系
１１０熱処理部
１１１インターフェイス部
１１２枚葉式処理部
１１３加熱炉
１１４ボート移載室
１１５搬送アーム
１１６ボート
１２０基板投入用チャンバー
１２１搬送チャンバー
１２２アニールチャンバー
１２３搬送チャンバー
１２４基板取出し用チャンバー
１２５予備加熱ヒーター
１２６アニール処理手段
１２７冷却手段
１２８カセット
１２９カセット[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an annealing apparatus and an annealing method for performing a heat treatment in a vacuum.
[0002]
[Prior art]
In general, a quartz crystal resonator includes a step of cutting and polishing a crystal of artificial quartz, a first vapor deposition step of forming an oscillator by attaching an electrode film to the polished crystal, and incorporating the resonator into a case. A first annealing step for stabilizing the electrode film, a second vapor deposition step for adjusting the frequency of the vibrator, and a second annealing for stabilizing the electrode film subjected to the frequency adjustment. It is manufactured by a process and a process of sealing a case containing a vibrator.
[0003]
In the conventional manufacturing method, the annealing step is performed by a batch type annealing apparatus shown in FIG. A batch-type annealing apparatus is generally a vertical type, and a plurality of shelves 102 for storing a substrate 101 as a processing target and a heating unit are provided inside the vacuum chamber 100. A substrate 101 filled with a plurality of vibrators is placed on each shelf 102, evacuated by a vacuum pump (not shown), heated by a heating means for a predetermined time, and gas is introduced by a gas introduction system 103 to be large. The process was terminated after opening to atmospheric pressure.
[0004]
[Problems to be solved by the invention]
Since the annealing apparatus shown in FIG. 9 is a batch-type apparatus that simultaneously processes a plurality of substrates simultaneously, a processing apparatus (substrate) that performs a deposition process, a case incorporation process, and a case sealing process that are pre- and post-annealing processes. It takes time to exchange substrates with each other), and it is difficult to improve the throughput of the entire system.
[0005]
Regarding the above problem, a processing system has been proposed that enables in-line processing of a single wafer processing unit and a batch processing unit to enable consistent continuous processing. FIG. 10 is a schematic view of an annealing apparatus using the processing system disclosed in Japanese Patent Laid-Open No. 7-137803.
[0006]
The heat treatment unit 110 that performs the annealing process is connected to the single wafer processing unit 112 via the interface unit 111 that transfers the substrate. The heat treatment unit 110 includes a vertical heating furnace 113 and a boat transfer chamber 114, and the boat transfer chamber 114 is provided with a transfer arm 115. A large number of substrates 101 that have undergone the single wafer processing are loaded into a boat 116 that accommodates a plurality of substrates 101 in the interface unit 111. When one lot (the number of substrates 101 to be processed at once in the heating furnace 113) is loaded into the boat 116, the boat 116 is transferred from the interface unit 111 to the boat transfer chamber 114. The first boat is inserted from the boat transfer chamber 114 into the heating furnace 113 by the transfer arm 115, and the substrate 101 is heated. In the meantime, in the single wafer processing section 112, the substrates 101 are processed one by one, and are sequentially accommodated in the interface section 111 in multiple stages. Thus, when the first boat 116 finishes the heat treatment, the second boat 116 is accommodated for one lot, and the annealing treatment is sequentially performed.
[0007]
Since the processing system disclosed in the publication relates to a semiconductor manufacturing apparatus, the configuration of each apparatus is different, but the crystal processing is performed in that the substrate processing to be performed one by one and the substrate processing to be performed for a plurality of substrates are performed continuously. It is the same as the manufacture of the vibrator. However, in the process of manufacturing a crystal resonator, there are steps that are performed in the atmosphere, such as a step of incorporating the resonator into a case, and thus the above-described continuous processing system may not be applied.
[0008]
In this case, frequency fluctuations occur because the vibrator that is the object to be processed is exposed to the atmosphere, and the fluctuation value of the frequency is not constant because the exposure time varies depending on the vibrator. Is not resolved.
[0009]
Furthermore, when the processing system disclosed in the above publication is used, it is possible to perform consistent continuous processing between an apparatus that processes substrates one by one and an apparatus that collectively processes a plurality of substrates. Since the annealing process is started after the number of substrates that can be processed one by one has been stored in the batch annealing apparatus, the waiting time of the substrate is delayed until the annealing process is started in the batch annealing apparatus. And had a big impact on productivity. This also affects the substrate processing in which the subsequent process of the annealing process is performed one by one, and a plurality of substrates finish the annealing process at the same time. During this period, there was a problem that the substrate could have a waiting time.
[0010]
Furthermore, since the annealing apparatus shown in FIG. 9 heats and cools a plurality of substrates simultaneously from room temperature, there is a problem that it takes time to raise and lower the temperature of the substrate.
[0011]
Here, a conventional annealing apparatus provided with a substrate preheating means and a cooling means in order to shorten the temperature raising and lowering time of the substrate will be described with reference to FIG. The annealing apparatus shown in the figure is disclosed in Japanese Patent Laid-Open No. 9-275080, and is characterized in that a preheating heater and a cooling means are provided in the annealing chamber.
[0012]
The apparatus shown in FIG. 1 includes a substrate loading chamber 120, transfer chambers 121 and 123, an annealing chamber 122, and a substrate removal chamber 124. In the annealing chamber 122, a preheating heater 125 and annealing processing means are provided. 126 and a cooling means 127.
[0013]
The operation will be described below. First, a large number of unprocessed substrates are accommodated in the cassette 128 in the substrate loading chamber 120, and the substrates are transferred into the annealing chamber 122 one by one through the transfer chamber 121. In the annealing chamber 122, the substrate is preheated, annealed, and cooled, and the substrate to be processed is accommodated in the cassette 129 of the substrate extraction chamber 124 via the transfer chamber 123.
[0014]
When the annealing apparatus described in the publication is used, by providing the preheating heater 125 and the cooling means 127 in the annealing chamber 122, it is possible to shorten the temperature rising time and the temperature falling time of the substrate, and the short annealing processing time. However, the desired thin film can be obtained, but since the substrate is annealed one by one, if the annealing time is long, the productivity is very low, and it is practical to use the above equipment There is a problem that is not.
[0015]
The present invention can be connected to a processing apparatus that performs pre- and post-annealing processes without creating a waiting time of a substrate while maintaining the productivity of a batch-type annealing apparatus that accommodates and processes a plurality of substrates for a certain period of time. An object of the present invention is to provide a highly productive annealing apparatus that shortens the temperature rise and fall time.
[0016]
SUMMARY OF THE INVENTION
In order to solve the above problems, the present invention provides a plurality of shelves that can be moved up and down in the annealing apparatus, and sequentially accommodates the substrates in the plurality of shelves, so that the substrates can be loaded and unloaded one by one at regular intervals. In addition, the annealing process is performed in parallel with a plurality of sheets. In addition, the apparatus has a three-chamber configuration, a preparation chamber, an annealing chamber, and a take-out chamber. A take-out chamber provided with a mechanism is provided, and the substrates are heated and cooled in a short time by preheating and cooling the substrates one by one.
[0017]
Specifically, this apparatus annealing chamber comprises a substrate heating means, a substrate stocker provided with a plurality of stages of shelves for accommodating the substrate, and a substrate stocker elevating means. From the substrate that has reached a predetermined heating time after the heating means in the substrate stocker which is heated to a set temperature by using the heating means and is continuously carried one by one, and after the heat treatment in the substrate stocker. The lifting and lowering means is driven to carry out the sheet one by one continuously at a predetermined interval.
[0018]
The apparatus preparation chamber is characterized in that the substrate is heated to a predetermined temperature by a preheating means and then transported to the annealing chamber at regular intervals. The apparatus take-out chamber is a means for forcibly cooling the annealed substrate. The sheet is rapidly cooled to a predetermined temperature one by one.
[0019]
The annealing apparatus can be connected in-line to a processing apparatus that performs pre- and post-annealing processes. In this case, the annealing apparatus of the present invention sequentially carries in the substrates transported one by one from the processing apparatus that performs the previous process, and sequentially transports the substrates that have been processed for a predetermined time one by one to the processing apparatus that performs the next process. . The processing apparatus connected at this time may be an apparatus that performs processing in a vacuum or an apparatus that performs processing in the atmosphere.
[0020]
In the present invention, the valve opening / closing operation, substrate loading / unloading, stocker moving (lifting / lowering) means, vacuum evacuation operation, and heating operation are performed with a certain timing schedule, and each operation is programmed in a control device (processor). The system is controlled by the command of the control device.
[0021]
[Explanation of Examples]
Constitution
FIG. 1 is a schematic view showing a transverse section of the annealing apparatus of the present invention, and FIG. 2 is a schematic view showing a longitudinal section. This apparatus comprises an annealing chamber 2 installed in the center, a preparation chamber 1 and an extraction chamber 3 installed on the left and right, and each chamber has ports 17 and 19 having gate valves 13 and 14 that can be opened and closed. It is connected.
[0022]
The substrate 6 is carried in from the preparation chamber 1, annealed in the annealing chamber 2, and then carried out from the take-out chamber 3.
[0023]
In this embodiment, a tray 70 shown in FIG. 8A filled with a plurality of vibrators is transported as a substrate 6, but the substrate 6 to be processed by the apparatus of the present invention is limited to the tray 70 shown in FIG. Other items may be used. By using a material having a small heat capacity such as Al for the tray 70, it is possible to raise and lower the temperature of the filled vibrator in a short time.
[0024]
The preparation chamber 1 has an inlet 16 for carrying in the substrate 6 and an outlet 17 for carrying out, and gate valves 12 and 13 are respectively installed in the inlets 16 and 17 so as to be opened and closed. Loading and unloading of the substrate 6 are repeatedly performed at regular intervals one by one. The substrate 6 is carried out from the outlet 17 of the preparation chamber 1 to the annealing chamber 2. However, when the normal temperature substrate 6 is transported to the annealing chamber 2, it takes time to raise the substrate 6 to the target temperature. The substrate 6 is preheated in the preparation chamber 1. In the preparation chamber 1, as a preheating mechanism, a plurality of halogen lamps 4 shown in FIG. 2 and a reflector 5 for efficiently transferring the heat of the halogen lamps 4 to the substrate 6 are installed. By making the reflector 5 have a size equal to or larger than that of the substrate 6, the temperature uniformity of the substrate 6 can be improved. In this embodiment, the halogen lamp 4 is used as the preheating mechanism, but other configurations may be used.
[0025]
A processing procedure in the preparation chamber 1 will be described below.
[0026]
First, the substrate 6 is loaded from the inlet 16 and the inside of the preparation chamber 1 is evacuated by a vacuum pump (not shown). Next, the loaded substrate 6 is transported to the lower part of the halogen lamp 4, and the substrate 6 is preheated by the halogen lamp 4. Preheating is performed for a predetermined time, and the substrate 6 for which preheating has been completed is carried out from the outlet 17 to the annealing chamber 2. Next, the inside of the preparation chamber 1 is opened to atmospheric pressure by a leak valve (not shown), the substrate 6 is loaded again from the inlet 16, and the above operation is repeated. The loading / unloading of the substrate 6 is performed by opening and closing the gate valves 12 and 13. The gate valves 12 and 13 are opened immediately before the substrate transfer and are closed immediately after the substrate transfer. The gate valves 12 to 15 can be opened and closed, and the opening and closing timing is controlled by the control device 100. Further, it includes means (not shown) for transporting the substrate 6 from one chamber to another chamber, and the operation of the transport means is controlled by the control device 100 to perform predetermined transport of the substrate.
[0027]
The annealing chamber 2 has an inlet 18 and an outlet 19 for carrying the substrate 6 in and out. The inlet 18 of the annealing chamber 2 is connected to the outlet 17 of the preparation chamber 1.
[0028]
As shown in FIG. 2, a substrate stocker 22 is provided in the annealing chamber 2 so as to be movable up and down, and one substrate 6 is accommodated on each shelf of the substrate stocker 22. In this embodiment, the elevator mechanism 7 is attached as a lifting / lowering means for the substrate stocker 22. The elevator mechanism 7 is provided in a lower region of the substrate stocker 22 and includes a support plate that supports the substrate stocker 22 and a drive device that moves the support plate up and down.
[0029]
As shown in FIG. 3, the substrate stocker 22 includes a plurality of substrate storage shelves 30 on which substrates 6 are loaded and an auxiliary shelf 31 provided at the uppermost stage. Each shelf is provided with a sheath heater 32, and the substrate 6 is annealed by the heat of the heater 32. The reason why the auxiliary shelf 31 is provided in the uppermost stage is to heat all the loaded substrates 6 under the same conditions. All the substrates 6 are provided with a heater 32 provided at the lower part of the shelf in which the substrates 6 are loaded, and the upper stage thereof. The annealing process is efficiently performed by the heater 32 provided at the lower part of the shelf. In the present embodiment, the sheath heater 32 is employed as a heating mechanism for annealing the substrate 6, but the annealing process may be performed using another heating mechanism. The substrate stocker 22 is provided with a plurality of thermocouples corresponding to each shelf, and heating control of each sheath heater 32 is performed based on the measured temperature of the thermocouple. However, when wiring becomes complicated if a thermocouple is provided on each shelf, the heater 32 may be divided into a plurality of blocks, and a thermocouple may be provided for each block to control the temperature of each shelf. For temperature control, ON-OF control or PID control may be used. While ON-OF control approaches ON and OF by repeating ON and OF, the PID control is a proportional action P that raises and lowers the manipulated variable in proportion to the deviation between the set value and the controlled variable. Since this control is a combination of the integral action I that raises and lowers the manipulated variable according to time, and the differential action D that raises and lowers the manipulated quantity according to the change in deviation, this embodiment uses PID control for accuracy. It is assumed that the temperature of the annealing chamber is well controlled.
[0030]
Although it is conceivable that the heater, which is a heating mechanism, must be replaced due to changes over time, in that case, a maintenance door 8 is provided on the front of the apparatus as shown in FIGS. Improvements can be made.
[0031]
Since the annealing chamber 2 is entirely exposed to a high temperature by the heating mechanism, it is necessary to cool the outer wall of the annealing chamber. In addition, the packing (not shown) attached to the maintenance door 8, the gate valves 13, 14 and the like is greatly affected by being exposed to a high temperature, and thus needs to be cooled. Therefore, in the present embodiment, the wall of the annealing chamber 2 is made to have a double structure, and cooling water is allowed to flow between them so that the entire wall can be cooled.
[0032]
Next, a processing procedure in the annealing chamber 2 will be described below.
[0033]
The annealing chamber 2 is always in a vacuum state, and the heater provided in the substrate stocker 22 is always turned on. The loading chamber 1 and the unloading chamber 3 adjacent to the annealing chamber 2 when the substrate 6 is carried in and out are always kept in a vacuum state.
[0034]
First, an empty shelf of a stocker, which is an accommodation position where a substrate is carried in by the elevator mechanism 7, is aligned with the entrance position of the annealing chamber 2, and the substrate 6 carried out from the preparation chamber 1 is delivered. The substrates 6 are sequentially accommodated in empty shelves by moving the substrate stocker 22 up and down by the elevator mechanism 7 and subjected to annealing treatment.
[0035]
By providing the substrate stocker 22 in the annealing chamber 2 according to the present invention, the substrates 6 sequentially loaded from the preparation chamber 1 at regular intervals can be stored in the annealing chamber 2 for a certain period of time. Since the annealing time of the substrate is determined by the number of substrate storage shelves 30 and the interval of substrate transport, the number of shelves and the transport interval are adjusted according to the purpose. In order to use the apparatus efficiently, it is desirable to provide the number of substrate storage shelves 30 so that the substrate stocker 22 is always filled. For example, when the substrates 6 are transported at intervals of 10 minutes and the desired annealing time is 120 minutes, 12 stages of substrate storage shelves 30 may be provided. As a result, the substrate 6 carried into the annealing chamber 2 at intervals of 10 minutes is annealed for 120 minutes and then sequentially carried out to the extraction chamber 3 at intervals of 10 minutes. Always satisfied.
[0036]
The substrate 6 subjected to the annealing treatment for a predetermined time is carried out from the outlet 19 to the take-out chamber 3 by moving the substrate stocker 22 up and down by the elevator mechanism 7 as in the case of carrying in. Although the substrate 6 is carried into and out of the annealing chamber 2 at the entrances 18 and 19, by moving up and down a plurality of shelves of the substrate stocker 22 by the elevator mechanism 7 according to the present invention, the substrate can be placed on any shelf. Loading and unloading is possible.
[0037]
The take-out chamber 3 has an inlet 20 and an outlet 21 for carrying in and out the substrate, and gate valves 14 and 15 are installed at the entrance and exit, respectively, so as to be opened and closed. The inlet 20 of the take-out chamber is connected to the outlet 19 of the annealing chamber, and the substrate 6 that has been annealed is sequentially carried into the take-out chamber 3. The loading and unloading of the substrate 6 is repeatedly performed at regular intervals one by one, like the preparation chamber 1 and the annealing chamber 2.
[0038]
Since the substrate 6 heated to a high temperature in the annealing chamber 2 is sequentially transported to the extraction chamber 3 after a certain period of time, the extraction chamber 3 is required to cool the substrate 6 within a certain period of time. Since the temperature drop of the substrate 6 cannot be expected by natural cooling in a vacuum within a certain time, the substrate 6 is forcedly cooled in the take-out chamber 3. The extraction chamber 3 is provided with a cooling mechanism for forced quenching of the substrate 6. As shown in FIG. 4, the cooling mechanism includes a cooling plate 9, a cooling plate lifting device 11, and a gas introduction system 10 shown in FIG. 1.
[0039]
The cooling plate 9 is a plate in which a water channel 40 is provided on a plate having a high thermal conductivity such as a copper plate, and cooling water is allowed to flow through the water channel 40. In the figure, a lifting device 11 indicates a cylinder, and the cooling plate 9 is lifted and lowered by introducing and discharging compressed air. Other configurations may be used for the cooling plate 9 and the lifting device 11.
[0040]
Next, the procedure for forced quenching in the take-out chamber 3 will be described below. First, after the inside of the extraction chamber 3 is evacuated by a vacuum pump (not shown), the substrate 6 is transferred from the annealing chamber 2 to the extraction chamber 3. Next, the substrate 6 carried into the take-out chamber 3 is transported directly above the cooling plate 9, and the cooling plate 9 is raised by the lifting device 11 and brought into contact with the substrate 6. At the same time, the substrate 6 is forcibly cooled by introducing an inert gas into the extraction chamber 3 by the gas introduction system 10. The forced cooling is performed for a certain period of time as in the preheating, and the forced cooling and extraction chamber of the first substrate 6 is carried out after the first substrate 6 is carried into the take-out chamber until the second substrate 6 is carried in. 3, the unloading of the substrate 6 from 3 and the evacuation of the extraction chamber 3 are all completed. As with the preparation chamber 1, the substrate 6 is carried in and out by opening and closing the gate valves 14 and 15, and the gate valves 14 and 15 are opened and closed immediately after the substrate is transferred.
[0041]
FIG. 7 is an explanatory view of the operation of the apparatus when the substrate storage shelves 30 of the substrate stocker 22 are provided in 12 stages. Hereinafter, the case where the substrate is transported at intervals of 10 minutes will be described with reference to FIG.
[0042]
First, the first substrate 6a is carried into the preparation chamber 1 and preheating is performed (a). After 10 minutes, the substrate 6a is transferred to the annealing chamber 2, and the second substrate 6b is transferred to the preparation chamber 1 (b). The annealing process is started at the same time that the substrate 6a is carried into the annealing chamber 2. After another 10 minutes, the second substrate 6b is carried into the annealing chamber 2, and the third substrate 6c is carried into the preparation chamber 1 (c). Similarly, the substrates 6c to 6l are sequentially carried into the annealing chamber 2 every 10 minutes (d) and (e). Ten minutes after the twelfth substrate 6l is carried into the annealing chamber 2, the first substrate 6a finishes the 120-minute annealing process, so the first substrate 6a is taken out into the take-out chamber 3, The thirteenth substrate 6m is carried into the annealing chamber 2, and the fourteenth substrate 6n is carried into the preparation chamber 1 (f). At this time, the 13th substrate 6m is carried into the shelf in which the substrate 6a was accommodated. Further, 10 minutes later, the second substrate 6b finishes the annealing process for 120 minutes, so the second substrate 6b is taken out to the take-out chamber 3, and the 14th substrate 6n is put into the anneal chamber 2 to the 15th substrate. The substrate 6o is carried into the preparation chamber 1 (g). The same operation is repeated below.
[0043]
In the above description, the first to eleventh substrates are processed in a state where the substrate stocker 22 in the annealing chamber 2 is not filled. However, at the start of the operation of the apparatus, eleven dummy substrates are loaded into the annealing chamber 2. In addition, the annealing chamber 2 may be always filled. When the substrate 6 is put into and out of the annealing chamber, the valves 13 and 14 are opened so that the annealing chamber, the charging chamber, and the extracting chamber can be connected. At this time, the charging chamber and the extracting chamber are evacuated. Actuators and transfer means (not shown) for operating the valves 12, 13, 14, 15, opening / closing of the substrate in the preparation chamber 1, annealing chamber 2, and take-out chamber, raising / lowering of the stocker, and vacuum evacuation are not shown. It is operated at a desired timing under the control of That is, the control device is programmed to operate at a desired timing.
[0044]
That is, the substrate 6m (article) preliminarily processed in the preparation chamber 1 for a predetermined preliminary processing time is sequentially carried into the annealing chamber 2, and a plurality of articles 6a are stored in the stocker 22 having a plurality of article storage positions in the annealing chamber 2. The articles that contain ˜6 l and are annealed for a predetermined annealing time in the annealing chamber 2 are sequentially carried out from the annealing chamber 2. (A) Annealing the pre-processed articles every predetermined pretreatment time An article that has been stored in an empty storage position of the indoor stocker, and has been annealed for a predetermined annealing time, is taken out of the stocker 22 and carried out of the annealing chamber 2 to create an empty storage position in the stocker 22 and (b ) After the step (a), the article in the stocker 22 is annealed for the predetermined pretreatment time, and then the steps (a) and (b) are repeated. The predetermined annealing time is longer than the predetermined pretreatment time. During the annealing of the article, the annealing chamber 2 is maintained in a vacuum, and the atmosphere outside the carry-in port and the carry-out port of the anneal chamber during the step (a) of carrying the article into and out of the anneal chamber 2 is as follows. It is in a vacuum. Also, annealing is continuously performed when the article 6 is carried in and out.
[0045]
The system described above is a system for heat-treating an article in a vacuum, and includes a charging chamber 1, an annealing heating chamber 2, and a take-out chamber 3. The charging chamber 1 and the heating chamber 2 can be opened and closed first. The heating chamber 2 and the extraction chamber 3 are connected by first openings 16 and 17 having a valve 13, and are connected by second openings 19 and 20 having a second valve 14 that can be opened and closed. A means (not shown) for bringing the article 6 in the preparation chamber 1 into the heating chamber 2 from the first openings 16 and 17 when the first valve 13 is opened is disposed in the heating chamber 2 having a plurality of article accommodation positions. The stocker 22 and at least one of the article storage positions of the stocker 22 are aligned with the first openings 16 and 17 so that the articles 6 loaded from the first openings 16 and 17 are stored in the aligned article storage positions. , And means for moving the stocker 22 to align the at least one of the article storage positions of the stocker 22 with the second openings 19, 20 and unload the articles at the aligned article storage positions from the second openings 19, 20. (FIGS. 2 and 7), means (not shown) for unloading the article 6 in the heating chamber 2 from the second openings 19 and 20 to the take-out chamber 3 when the second valve 14 is opened, means for carrying in, means for carrying out , Stocker And a control unit 100 which controls moving means and the first and the actuation of the second valve. This control device 100 opens the first valve 13 at every predetermined carry-in interval time interval (for example, the above-mentioned 10-minute interval), and transfers the article 6 from the preparation chamber 1 to the heating chamber 2 through the first opening. 1st control which controls the 1st valve | bulb 13 and a carrying-in means to carry in is carried out, and the empty article accommodation position of the stocker 22 is 1st when carrying the goods 6 into the heating chamber 2 through the 1st opening. When the second control for controlling the stocker moving means 7 to align with the opening is performed, when at least one of the plurality of articles accommodated in the stocker 22 has been heated for a predetermined heating time (for example, 120 minutes described above). The third control is performed to control the stocker moving means 7 so that the storage position of the heated article 6 is aligned with the second opening, and the storage position of the heated article of the stocker 22 is aligned with the second opening. Sometimes things From the heating chamber 2 and out to the second through openings ejecting chamber 3 is performed a fourth control for controlling the discharge means and the second valve 14 to make room article storage location in the stocker 22.
[0046]
At that time, the shelf position of the stocker 22 on which the annealed (heated) completed article (substrate) is placed is aligned by driving the stocker moving means 7 to the second opening (third control). After the annealed article is taken out from the storage chamber 3 and an empty shelf is generated in the stocker 22 (fourth control), the article from the preparation chamber 1 is accommodated in the empty shelf. If the second openings are configured at the same horizontal level, the second control described above need not be performed. This is because the first opening and the empty shelf are already aligned after the third control. Moreover, in this system, annealing heating is continuously performed even when the article is carried into and out of the heating chamber. At that time, the vacuum state of the annealing chamber is continuously maintained. While the first and second openings are open, the control device 100 evacuates the preparation chamber 1 and the extraction chamber 3 with a vacuum evacuation means (not required) so that at least the atmosphere in the preparation chamber 1 and the extraction chamber 3 is kept in vacuum. (Shown) is operating.
[0047]
The preparation chamber 1 and the take-out chamber 3 of the apparatus of the present invention may be connected to a processing apparatus that is in charge of the pre- and post-annealing processes and inlined.
[0048]
For example, when the electrode vapor deposition process, the annealing process, and the case sealing process are continuously performed in the manufacturing process of the crystal resonator, the vapor deposition apparatus 50 and the preparation chamber 1 are connected to the take-out chamber 3 and the seam welding apparatus 51, respectively. FIG. 5 is a schematic diagram showing the state. Hereinafter, the connection of this apparatus will be described with reference to the same drawing, but this apparatus is connected to an arbitrary processing apparatus capable of continuous processing, and the connectable apparatus is not limited to the above apparatus.
[0049]
In the figure, the substrates 6 are transferred one by one from the vapor deposition apparatus 50 to the preparation chamber 1, from the preparation chamber 1 to the annealing chamber 2, from the annealing chamber 2 to the extraction chamber 3, and from the extraction chamber 3 to the seam welding apparatus 51. In addition, all the substrates are carried in and out of each room at the same pitch.
[0050]
The processing in this apparatus is as described above. However, when the connecting device to the preparation chamber 1 is a vacuum apparatus, repeated evacuation and release to the atmosphere in the preparation chamber 1 are omitted, and the preparation chamber 1 is always evacuated. It will be in the state. In this case, the gate valve 12 may be omitted if necessary if the atmosphere between the two apparatuses is equal. When the connecting device to the take-out chamber 3 is a vacuum device, the vacuum exhaust is performed before the substrate is taken out from the take-out chamber 3.
[0051]
This apparatus can sequentially process the substrates 6 carried out one by one from the vapor deposition apparatus 50. Further, the seam welding apparatus 51 can sequentially process the substrates 6 carried out one by one from the apparatus take-out chamber 3. That is, by connecting the present apparatus and the processing apparatus in charge of the preceding and following processes, it is possible to eliminate the waiting time of the substrate 6 and greatly improve the productivity of the entire apparatus.
[0052]
The substrate transport interval, the number of shelves, and the number of elements to be filled in one substrate in this equipment are adjusted according to the purpose such as the takt time of the equipment in charge of the process before and after annealing and the desired annealing time. To do.
[0053]
Next, a case where the processing substrate on which the vibrator in the annealing apparatus of the present invention is placed and the processing substrate on which the vibrator in the connection device is placed will be described with reference to FIG. In this case, both devices are connected via the transfer machines 60 and 61 to align the processing units.
[0054]
When the processing substrate 62 in the vapor deposition apparatus 50 is different from the processing substrate 63 of this apparatus, the transfer device 60 refills the processing substrate 63 of this apparatus with the elements on the processing substrate 62 of the carried vapor deposition apparatus 50, The processing substrate 63 of this apparatus is carried out. At this time, the interval of loading / unloading of the substrate 63 in each room of the apparatus is the same as the interval of unloading the substrate 63 from the transfer device 60.
[0055]
When the processing substrate 63 of the present apparatus is different from the processing substrate 64 of the seam welding apparatus 51, the transfer device 61 refills the processing substrate 64 of the seam welding apparatus 51 with the elements on the processing substrate 63 of the present apparatus. The transfer machine 61 carries out the processing substrate in accordance with the tact time of the seam welding device 51.
[0056]
12 to 16 show the results of measuring the temperature change of the substrate using the preparation chamber 1, the annealing chamber 2, and the take-out chamber 3 described above. In all the figures, the vertical axis represents temperature and the horizontal axis represents time.
[0057]
In the measurement, 12 stages of substrate storage shelves 30 are provided in the annealing chamber substrate stocker 22, a dummy carrier 71 and a temperature measuring thermocouple 72 are mounted on the tray 70 shown in FIG. 8B as the substrate 6, and the temperature of the dummy carrier 71 is measured. Changes were measured. Further, it is assumed that each shelf is set to 310 ° C., the substrate is annealed at a guaranteed temperature of 270 ° C. ± 27 ° C., and then the substrate is cooled to 150 ° C. or lower to finish the processing.
[0058]
FIG. 12 shows the measured substrate rising temperature when the normal temperature substrate 6 is transported to the annealing chamber 2 without providing the preheating mechanism in the preparation chamber 1.
[0059]
From FIG. 12, when the normal temperature substrate 6 is transported to the annealing chamber 2, it takes 97 minutes for the substrate 6 to reach the guaranteed minimum temperature of 243 ° C.
[0060]
FIG. 13 shows the substrate rising temperature when the preheating mechanism of the present invention is provided in the preparation chamber 1 and the preheated substrate 6 is transported to the annealing chamber 2. The halogen lamp 4 and the reflector 5 described above were used for the preheating mechanism, and other measurement conditions were the same as those in FIG. The time on the horizontal axis is 0 minutes when the substrate is loaded from the preparation chamber 1 into the annealing chamber 2.
[0061]
From FIG. 13, it can be seen that by the preheating mechanism of the present invention, the temperature of the substrate rose to 250 ° C. in the preparation chamber, and reached the guaranteed lower limit of 243 ° C. in 57 minutes after being loaded into the annealing chamber 2.
[0062]
FIG. 14 shows the change in temperature of the substrate when the tray 70 shown in FIG. 8B is made of Al with a small heat capacity and the other measurement conditions are the same as those in FIG.
[0063]
From FIG. 14, when the tray 70 shown in FIG. 8B is made of Al, the time required to reach the guaranteed temperature lower limit of 243 ° C. after being brought into the annealing chamber 2 can be shortened to 40 minutes. Recognize.
[0064]
FIG. 15 shows that the substrate storage shelf 30 of the annealing chamber substrate stocker 22 is divided into three blocks of a lower three stages, a middle six stages, and an upper three stages, and the temperature of each shelf is PID controlled by a thermocouple provided in each block. These conditions show the temperature change of the substrate when the same conditions as in FIG.
[0065]
From FIG. 15, it can be seen that by controlling the temperature of the annealing chamber 2, the time required from reaching the annealing chamber 2 to reaching the guaranteed temperature lower limit of 243 ° C. has been shortened to 18 minutes.
[0066]
As a result, preheating is performed in the preparation chamber 1 using the preheating mechanism of the present invention, the tray 70 of the substrate 6 is made of a material having a small heat capacity, and the temperature of the annealing chamber 2 is controlled, so that the substrate at room temperature is annealed. As compared with the case where the substrate is transported to the substrate 2, the substrate accommodation time in the annealing chamber 2 can be shortened by 79 minutes, and the substrate annealing process can be performed in a short time.
FIG. 16 shows the temperature change of the substrate 6 when the substrate 6 heated to 270 ° C. ± 27 ° C. in the annealing chamber 2 is transferred to the take-out chamber and the substrate 6 is forcibly cooled. The time on the horizontal axis is 0 minutes when the substrate is carried out from the annealing chamber 2 to the extraction chamber 3.
[0067]
The take-out chamber 3 was provided with the quenching mechanism of the present invention, and the quenching mechanism 9 was used with the cooling plate 9 and the gas introduction system 10 described above, and He gas was introduced as an inert gas.
[0068]
This figure shows the temperature change when only the cooling plate of the present invention is used in (a), and the temperature change when He gas is further introduced using the cooling plate 9 is shown in (b).
[0069]
From (a), it becomes possible by using this invention cooling plate 9 to reduce a substrate temperature to 150 degreeC in 23 minutes after carrying in to the taking-out chamber 3. FIG. From (b), it can be seen that by introducing He gas in addition to the cooling plate 9, the substrate can be lowered to 150 ° C. in 2 minutes and 10 seconds, and the temperature lowering time is further shortened.
[0070]
12 to 16, it can be seen that by using the preheating mechanism and the rapid cooling mechanism of the present invention, the processing time required for the annealing process can be reduced and the productivity of the apparatus can be improved.
[0071]
Explanation of other examples, explanation of examples of diversion to other applications
In the above embodiment, the embodiment shown in FIG. 5 shows a case where a device for performing continuous processing is directly connected to the preparation chamber and the take-out chamber of the apparatus of the present invention. The embodiment shown in FIG. Although the case where the apparatus to perform is connected via a transfer machine was demonstrated, you may connect a transfer machine only to the preparation chamber of this apparatus, or you may connect a transfer machine only to an extraction chamber.
[0072]
In the above embodiment, the number of substrates accommodated in the preparation chamber and the extraction chamber is one, but there may be a plurality of substrates. If the substrate is to be raised to a higher temperature in the preparation chamber or the substrate is more removed in the extraction chamber. When it is desired to cool to a low temperature, a plurality of halogen lamps for preheating and cooling plates for forced cooling may be provided in parallel.
[0073]
【The invention's effect】
By providing a plurality of shelves in the annealing chamber so as to be movable up and down in the present invention, it is possible to carry in / out the substrates to / from an arbitrary shelf, and the substrates sequentially carried in at regular intervals are stored and processed in the annealing chamber for a certain period of time. Things will be possible. As a result, it is possible to directly connect to the processing equipment in charge of the front and back processes while processing multiple substrates at the same time in the annealing chamber, eliminating the waiting time of the substrate in the production line and significantly improving the productivity of the equipment. It becomes possible to do.
[0074]
In addition, a preheating mechanism is provided in the preparation chamber and a rapid cooling mechanism is provided in the take-out chamber, so that the substrate is preheated and rapidly cooled one by one, so that heating and cooling can be performed in a short time. The temperature drop time can be significantly shortened, which further contributes to the improvement of device productivity.
[0075]
Further, the elevator mechanism provided in the annealing chamber can efficiently store the processing object continuously sent in the space, and the apparatus can be made compact.
[Brief description of the drawings]
FIG. 1 is a schematic view showing a cross section of an annealing apparatus of the present invention and a control system.
FIG. 2 is a schematic view showing a longitudinal section of the annealing apparatus of the present invention.
FIG. 3 is an explanatory diagram showing a configuration of a substrate stocker.
FIG. 4 is a schematic view showing a cooling plate and a lifting device.
FIG. 5 is a schematic view showing the connection of the annealing apparatus of the present invention.
FIG. 6 is a schematic diagram showing the connection of the annealing apparatus of the present invention via a transfer machine.
FIG. 7 is an explanatory diagram of the operation of the annealing apparatus of the present invention.
8A is an explanatory diagram of a tray of the present invention, and FIG. 8B is an explanatory diagram of a dummy carrier for substrate temperature measurement.
FIG. 9 is a schematic view of a conventional batch annealing apparatus.
FIG. 10 is a schematic view of an annealing apparatus using a conventional processing system disclosed in Japanese Patent Laid-Open No. 7-137803.
FIG. 11 is a schematic diagram of a conventional annealing apparatus disclosed in Japanese Patent Laid-Open No. 9-275080.
FIG. 12 Substrate temperature measurement data when a normal temperature substrate is transported to the annealing chamber
FIG. 13 shows substrate temperature measurement data when a substrate preheated by the preheating mechanism of the present invention is transferred to an annealing chamber.
FIG. 14 shows substrate temperature measurement data when preheating the tray of the substrate of the present invention with a small heat capacity made of Al.
FIG. 15 shows substrate temperature measurement data when controlling the temperature of the annealing chamber of the present invention.
FIG. 16 shows substrate temperature measurement data when forced cooling is performed by the rapid cooling mechanism of the present invention.
[Explanation of symbols]
1 preparation room
2 Annealing chamber
3 Extraction room
4 Halogen lamp
5 reflectors
6 Substrate
7 Elevator mechanism
8 Maintenance door
9 Cooling plate
10 Gas introduction system
11 Lifting device
12 Gate valve
13 Gate valve
14 Gate valve
15 Gate valve
16 Preparation room entrance
17 Preparation room exit
18 Annealing chamber entrance
19 Annealing chamber exit
20 Entrance of the extraction room
21 Unloading room exit
22 Substrate stocker
30 Substrate storage shelf
31 Auxiliary shelf
32 Sheath heater
40 waterways
50 Vapor deposition equipment
51 Seam welding equipment
60 Transfer machine
61 Transfer machine
62 Vapor deposition processing substrate
63 Equipment processing board
64 Seam welding equipment processing board
70 trays
71 dummy carrier
72 Thermocouple
100 vacuum chamber
101 substrate
102 shelves
103 Gas introduction system
110 Heat treatment section
111 Interface section
112 single wafer processing unit
113 Heating furnace
114 Boat transfer room
115 Transfer arm
116 boats
120 Chamber loading chamber
121 Transfer chamber
122 Annealing chamber
123 Transfer chamber
124 Chamber for substrate removal
125 Preheater
126 Annealing means
127 Cooling means
128 cassettes
129 cassette

Claims

An annealing apparatus for performing heat treatment on an article in a vacuum, the annealing apparatus being a charging chamber equipped with a preheating means, and an annealing chamber containing a stocker equipped with a means for storing and heating a plurality of articles. The substrate stocker has a three-chamber configuration comprising an annealing chamber provided with a means for raising and lowering the substrate stocker and a take-out chamber provided with a cooling means, and has a valve that can be opened and closed between the charging chamber and the annealing chamber. An annealing apparatus, wherein the annealing apparatus is connected by a first opening, and the annealing chamber and the take-out chamber are connected by a second opening having an openable / closable valve.

2. An annealing apparatus according to claim 1, wherein the preparation chamber has means for heating the article to a predetermined temperature by the preheating means and then transporting the article to the annealing chamber at regular intervals.

The annealing apparatus according to claim 2, wherein the preheating means in the preparation chamber includes a halogen lamp and a reflector provided at a position facing the article with respect to the halogen lamp.

The articles that have been preheated in the charging chamber and are carried in at regular intervals are driven to the plurality of article storage positions of the stocker, and the lifting and lowering means are driven to continuously store the articles one by one. 2. An annealing apparatus according to claim 1, further comprising a control device for driving said lifting means from an article that has reached a predetermined heating time after the heat treatment to continuously carry out the lifting means one by one at a predetermined interval to the take-out chamber. .

The article heating means in the annealing chamber includes a heater provided on each of a plurality of shelves in the stocker, and a heating control means for performing an annealing process on the article by controlling the heating of the heater. The annealing apparatus according to claim 1 or 4.

The heating means of the stocker has a thermocouple corresponding to each shelf in the stocker, and the heating control means performs temperature control for the articles on each shelf based on the temperature measurement result by the thermocouple. An annealing apparatus according to claim 5.

The heating means of the stocker has each thermocouple corresponding to each of the plurality of blocks of the shelf, and the heating control means controls the temperature of the articles on the shelf belonging to each block based on the temperature measurement result by the thermocouple. The annealing apparatus according to claim 5 or 6, wherein:

The stocker of the annealing chamber is composed of a plurality of shelves for storing the article, a heater installed on the lower surface of the shelf, an auxiliary shelf provided on the uppermost stage, and a heater installed on the lower surface of the auxiliary shelf. The annealing apparatus according to claim 1 or 4, wherein the annealing apparatus is provided.

The annealing apparatus according to claim 8, wherein the raising / lowering driving means of the annealing chamber is provided in a lower region of the stocker, and includes a support plate that supports the stocker and a drive device that moves the support plate up and down.

5. The annealing apparatus according to claim 1, wherein the annealing chamber has a structure in which the outer wall has a double structure, and the entire outer wall is cooled by flowing cooling water therebetween.

2. The annealing apparatus according to claim 1, wherein the take-out chamber forcibly cools the annealed article one by one to a predetermined temperature by the cooling means.

12. The annealing apparatus according to claim 11, wherein the cooling means of the take-out chamber is constituted by a cooling plate having a cooling water flow path therein, a lifting / lowering device for the cooling plate, and a gas introduction system.

13. The annealing apparatus according to claim 1, wherein the article is obtained by loading a plurality of production intermediate elements on a tray made of a material having a small heat capacity.

The annealing apparatus according to claim 1, further comprising means for maintaining the charging chamber and the take-out chamber in a vacuum state when the opening and closing valves of the first and second openings are opened.

The annealing apparatus is characterized in that a processing apparatus for performing a pre-annealing process is connected to the charging chamber, and a processing apparatus for performing a next process of the annealing process is connected to the take-out chamber to inline the entire apparatus. The annealing apparatus according to claim 1.

The annealing apparatus according to claim 15, wherein the processing apparatus is connected to the preparation chamber and the extraction chamber via a transfer machine.

In the annealing method that heats the article in a vacuum,
The article is preheated to a predetermined temperature in a charging chamber equipped with preheating means, and the preheated articles are successively carried into the annealing chamber one by one at a predetermined interval, and the article is put into the annealing chamber. At the same time, the annealing process for each article is started at the same time, a plurality of articles are annealed simultaneously in the processing chamber, and one article is placed at a predetermined interval from the article that has been subjected to the annealing process for a predetermined time. An annealing method characterized by continuously carrying the product from the annealing chamber into a cooling chamber and forcibly cooling the article in the cooling chamber.

18. The article is a substrate on which a crystal resonator is placed, the resonator is a substrate on which an electrode film is deposited, and the annealing treatment is a first annealing treatment that stabilizes the electrode film. The annealing method described.

The article is a substrate on which a crystal resonator is mounted. The resonator is frequency-adjusted with respect to the electrode film. The annealing treatment stabilizes the frequency-adjusted electrode film. The annealing method according to claim 17, which is an annealing treatment.

A system for heat-treating an article in a vacuum, comprising a charging chamber, a heating chamber, and a take-out chamber, wherein the charging chamber and the heating chamber are connected by a first opening having a first valve that can be opened and closed, In the system in which the heating chamber and the extraction chamber are connected by a second opening having a second valve that can be opened and closed,
Means for carrying the article in the charging chamber into the heating chamber from the first opening when the first valve is opened;
A stocker disposed in the heating chamber having a plurality of article storage positions;
In order to align at least one of the article storage positions of the stocker with the first opening and to store articles loaded from the first opening in the aligned article storage position, Means for moving the stocker to align at least one with the second opening and unload the article at the aligned article receiving position from the second opening;
Means for carrying out articles in the heating chamber from the second opening to the take-out chamber when the second valve is opened; means for carrying in; means for carrying out; means for moving the stocker; and first and second means It consists of a control device that controls the operation of the valve,
The control device opens the first valve at intervals of a predetermined carry-in interval time, and loads the article from the preparation chamber into the heating chamber through the first opening. Performing a first control to control the valve and the loading means;
The control device controls the stocker moving means so that an empty article storage position of the stocker is aligned with the first opening when an article is carried into the heating chamber through the first opening. And
The control device is configured to align the storage position of the heated article with the second opening when at least one of the plurality of articles contained in the stocker has been heated for a predetermined heating time. Perform a third control to control the moving means;
When the storage position of the heating completion article of the stocker is aligned with the second opening, the control device carries the article from the heating chamber to the take-out chamber through the second opening. The heat processing system which is performing the 4th control which controls this 2nd valve | bulb and this carrying-out means so that an empty article accommodation position may be made in a stocker.

A vacuum is maintained during the heat treatment of the article in the heating chamber, the charging chamber is maintained in vacuum when the first valve is opened, and the take-out chamber is maintained in vacuum when the second valve is opened. 21. The heat treatment system according to claim 20 , wherein the treatment is continuously performed when the article is carried into and out of the heating chamber.

The first valve is closed when the article is transferred from the outside of the atmospheric atmosphere to the charging chamber, and the second valve is closed when the article is transferred from the take-out chamber to the outside of the atmospheric atmosphere. 21. The heat treatment system according to claim 20, wherein the charging chamber is evacuated after the transfer to the charging chamber, and the extraction chamber is evacuated after the article is transferred from the extraction chamber to the outside of the atmospheric pressure atmosphere.

21. The heat treatment system according to claim 20, further comprising means for preheating the article in the charging chamber and means for cooling the article in the take-out chamber.

21. The heat treatment system according to claim 20, wherein a time required for the preliminary heating and a time required for the cooling are shorter than the predetermined loading interval time, and the predetermined heating time is longer than the predetermined loading interval time.

The heating chamber has a configuration in which one of the stocker's article receiving positions is aligned with both the first opening and the second opening at the same moving position of the stocker, and the controller is configured to control the third and fourth units. The heat treatment system according to claim 20 , wherein the second control is omitted after performing the control.

The heat treatment system according to claim 20 , wherein the article is a crystal resonator having an electrode film.

The heat treatment system according to claim 20, wherein when the stocker has an empty storage position, a dummy article is stored in the empty storage position.