JP4018461B2 - Radiation detection apparatus, method of manufacturing the same, and radiation imaging system - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a radiation detection apparatus that detects radiation such as X-rays and γ-rays, and more particularly to a radiation detection apparatus applied to a medical image diagnostic apparatus, a nondestructive inspection apparatus, an analysis apparatus using radiation, and a manufacturing method thereof. About.
[0002]
[Prior art]
Conventionally, imaging methods used in medical image diagnosis are roughly classified into general imaging for obtaining still images and fluoroscopic imaging for obtaining moving images. Each photographing method is selected including a photographing device as necessary.
[0003]
In recent years, advances in liquid crystal TFT technology and improvement of information infrastructure have been developed, and a sensor composed of photoelectric conversion elements and switch TFTs using non-single crystal silicon, for example, amorphous silicon (hereinafter abbreviated as a-Si). A flat panel detector (hereinafter abbreviated as FPD) that combines an array and a phosphor that converts radiation into visible light or the like has been proposed, and has a large area and a possibility of true digitization. .
[0004]
This FPD can read radiation images instantaneously and display them on a display in real time. Since the images can be directly taken out as digital information, data storage, processing, transfer, etc. There is a feature said that is convenient. In addition, although various characteristics such as sensitivity depend on imaging conditions, it has been confirmed that they are equivalent to or higher than conventional S / F imaging methods and CR imaging methods.
[0005]
A schematic equivalent circuit diagram of this FPD is shown in FIG. In the figure, 101 is a photoelectric conversion element section, 102 is a switch TFT section, 103 is a switch TFT drive wiring, 104 is a signal line, 105 is a bias wiring, 106 is a signal processing circuit, 107 is a TFT drive circuit, and 108 is an A / D. It is a conversion unit.
[0006]
Radiation such as X-rays enters from the top of the page and is converted into visible light by a phosphor (not shown). The converted light is converted into electric charge by the photoelectric conversion unit 101 and accumulated in the photoelectric conversion unit 101. After that, the TFT driving circuit 107 operates the transfer TFT 102 from the TFT driving wiring, transfers the accumulated charge to the signal line 104, is processed by the signal processing circuit 106, and is further A / D converted by 108 and output. The
[0007]
Basically, the element configuration as described above is common, and in particular, the photoelectric conversion element is a PIN photodiode (hereinafter abbreviated as PIN PD) or the MIS type employed by the present inventors. Various elements such as photodiodes (hereinafter abbreviated as MIS type PD) have been proposed.
[0008]
FIG. 11 is a schematic plan view of one pixel when the photoelectric conversion element is an MIS type PD. 203 is a lower electrode of the MIS type PD section, 202 is a switch TFT drive wiring, 204 is a gate electrode of the switch TFT, 208 is a sensor bias wiring, 210 is a signal line, and 209 is a source / drain electrode (hereinafter referred to as SD electrode) of the switch TFT. , 211 is a contact hole.
[0009]
FIG. 12 is a schematic cross-sectional view in which elements in one pixel shown in FIG. 11 are schematically arranged. 201 is a glass substrate, 202 is a switch TFT drive wiring, 203 is a MIS PD lower electrode, 204 is a switch TFT gate electrode, 205 is a gate insulating film, 206 is an intrinsic a-Si film, 207 is a hole blocking layer (n + layer, (Ohmic contact layer), 208 is a bias wiring, 209 is a transfer TFT SD electrode, 210 is a signal line, 220 is a protective film, 221 is an organic resin layer, and 222 is a phosphor layer.
[0010]
Next, an FPD manufacturing method using a conventional MIS type PD will be described with reference to FIGS. The numbers in the figure are the same as in FIG.
[0011]
In the first step, the switch TFT drive wiring 202, the MIS type PD lower electrode 203, and the switch TFT gate electrode 204 are formed on the glass substrate with the first metal layer. A schematic plan view thereof is shown in FIG.
[0012]
In the second step, a gate insulating film, an intrinsic a-Si film, and a hole blocking layer (ohmic contact layer) are sequentially stacked.
[0013]
In the third step, a contact hole (connection hole) 211 for joining the MIS type PD lower electrode 203 and the SD electrode 209 of the switch TFT is formed. A schematic plan view thereof is shown in FIG.
[0014]
In the fourth step, the second metal layer is stacked, and the bias wiring 208 is formed by the first resist work. At this time, the region where the SD electrode 209 of the switch TFT, which will be described later, and the signal line 210 are formed is left in an island shape. A schematic plan view thereof is shown in FIG.
[0015]
In the fifth step, the SD electrode 209 and the signal line 210 of the switch TFT are formed by the second resist work, and then the n + semiconductor layer is removed. That is, a gap portion between the SD electrodes of the switch TFT is formed, and at the same time, the n + semiconductor layer of the MIS type PD portion is left as an electrode. A schematic plan view thereof is shown in FIG.
[0016]
In the sixth step, element isolation is performed. A schematic plan view thereof is shown in FIG.
[0017]
In the seventh step, a protective layer is stacked and a necessary region such as a wiring lead portion is removed. Thereafter, the phosphor is bonded with an organic resin or the like.
[0018]
As is clear from FIGS. 11 and 12, the FPD manufactured as described above has the same layer structure as the MIS type PD and the switch TFT, so that the manufacturing method is simple, high yield and low price are realized. It is evaluated that there are advantages that can be achieved, and that various characteristics such as sensitivity are sufficiently satisfactory. For this reason, as a device used for general photography, the above-described FPD has been adopted instead of the conventional S / F method and CR method.
[0019]
Furthermore, as can be seen from FIGS. 13 to 17, the conventional example uses six masks. (1) first metal layer patterning, (2) connection hole patterning, (3) second metal layer patterning, (4) second metal layer patterning / ohmic contact layer patterning of TFT section, ( 5) For element isolation patterning and (6) Patterning of protective layer.
[0020]
[Problems to be solved by the invention]
However, the above-mentioned FPD has a large area and has been completely digitized, and is gradually beginning to be used mainly for general photography. However, further improvement is expected in terms of sensitivity. Moreover, in order to enable fluoroscopic imaging, further improvement in sensitivity is considered essential.
[0021]
FIG. 18 is a 1-bit equivalent circuit of FPD using MIS type PD. In the figure, C1 is the combined capacitance of the MIS type PD, C2 is the parasitic capacitance formed on the signal line, Vs is the sensor bias potential, Vr is the sensor reset potential, SW1 is the Vs / Vr selector switch of the MIS type PD, SW2 is the transfer A TFT ON / OFF switch, SW3 is a signal line reset switch, and Vout is an output voltage.
[0022]
A potential Vs is applied to the MIS type PD by SW1 so that the semiconductor layer is depleted as a bias potential. In this state, when converted light from the phosphor enters the semiconductor layer, positive charges blocked by the hole blocking layer are accumulated in the a-Si layer, and a potential difference Vt is generated. Thereafter, the ON voltage of the switch TFT is applied from SW2 and output as the voltage Vout. The output Vout is read by a reading circuit (not shown), and then the signal line is reset by SW3, and reading is performed sequentially.
[0023]
According to the driving method described above, the switch TFTs are sequentially turned on line by line to complete the full reading of one frame. Thereafter, the reset potential Vr is applied from the SW1 to the MIS type PD, reset is performed, the bias potential Vs is applied again, and the image reading accumulation operation starts.
[0024]
The saturation value of the output Vout of the MIS type PD is approximately proportional to the potential Vt. The potential Vt is determined by the product of the bias voltage difference: Vs−Vr and the internal gain: G. Internal Gain: G is determined by Cins / (Cins + Csemi). The output voltage Vout is output at a C1 / C2 capacitance ratio with respect to the potential Vt.
[0025]
The sensitivity of the MIS type PD can be roughly expressed by the ratio of the above-described saturation output voltage in the light incident state, that is, the signal component and the output voltage in the dark state, that is, the noise component.
[0026]
The signal component generally depends on 1) the PD aperture ratio, 2) the PD light incidence efficiency, in other words, the amount of light incident on the intrinsic a-Si film, and 3) the internal Gain.
[0027]
On the other hand, the following various factors have been confirmed for the noise component. (1) Shot noise: Shot noise proportional to the square root of the sensor aperture ratio. (2) KTC noise: KTC noise proportional to the square root of the C1 capacity. (3) Signal wiring noise: wiring noise proportional to the square root of wiring resistance and C2 capacitance. (4) IC noise: IC noise proportional to C2 capacity. (5) Gate wiring noise: wiring noise proportional to the square root of wiring resistance.
[0028]
Usually, in order to achieve an increase in sensitivity, it is naturally necessary to increase the signal component, decrease the noise component, or achieve both at the same time. However, the signal component and the noise component are related to each other, and as a result of improving the former, the latter is affected, and eventually the sensitivity is not improved in many cases.
[0029]
For example, in order to improve the signal component, in order to improve the above 1) PD aperture ratio, it can be realized by shrinking the wiring width or the space between the wirings. As a result, the wiring resistance or the parasitic capacitance of the signal line increases, resulting in an increase in noise components. That is, although the signal component is improved, the noise component also increases, which may cause a reduction in sensitivity. Furthermore, since the wiring rules become stricter as a result of miniaturization, productivity such as yield reduction is reduced.
[0030]
Similarly, in the above-described 2) light incidence efficiency, the ohmic contact layer bonded to the a-Si film, which is a photoelectric conversion layer, also needs a function as a carrier blocking layer and a function as an upper electrode. In addition, a film thickness of about 500 mm or more where light absorption cannot be ignored is required. As a result, the light absorption in the n + film causes a decrease in sensitivity. Naturally, when the n + film is thinned, the resistance of the n + film increases, resulting in a failure to function as a PD upper electrode.
[0031]
In order to improve the above-described 3) internal gain, it is necessary to increase the thickness of the a-Si film or reduce the thickness of the gate SiN film. However, increasing the thickness of the a-Si film causes a decrease in the transfer capability of the switch TFT, resulting in an increase in TFT size and a decrease in aperture ratio. In addition, there are limits to production problems such as stress and foreign matter generation. Further, the thinning of the SiN film has the same limit in consideration of the withstand voltage at the wiring intersections, etc. Even if the thinning can be achieved, the noise component increases due to the increase in the parasitic capacitance C2, which is conspicuous. Sensitivity improvement is not achieved.
[0032]
On the other hand, when reducing gate wiring resistance, focusing on noise reduction, it is necessary to increase the thickness or width of the gate wiring, but the former causes a decrease in dielectric strength at the wiring intersection, The latter will cause a decrease in the aperture ratio.
[0033]
In addition, in order to reduce the wiring resistance of the signal line, it is necessary to increase the thickness or width of the signal line. However, the former has an upper limit of production equipment due to an increase in stress, and also due to processing problems. There is a limit to thickening. In addition, the latter causes a decrease in the aperture ratio as described above.
[0034]
As described above, in the current configuration, the sensitivity is optimized in the design. In other words, it can be said that further improvement in sensitivity requires improvement of the fundamental structure, material, and manufacturing process.
[0035]
Accordingly, the present invention aims to provide a manufacturing method of a radiation detection apparatus by a simple process while improving the aperture ratio by adopting a laminated structure in a cassette type, mammography, etc. that require high definition. To do.
[0036]
[Means for Solving the Problems]
In order to solve the above-described problems, the present invention provides a method for manufacturing a radiation detection apparatus in which a radiation signal conversion element is laminated on a switch TFT, and includes a gate electrode of the switch TFT by a first metal layer. A step of forming a drive wiring, a step of sequentially stacking a first insulating layer, a first semiconductor layer, and an etch stop insulating layer, a step of etching the etch stop insulating layer, and a layer of ohmic contact layers A step of laminating a second metal layer, a step of forming a source / drain electrode and a signal line of the switch TFT, and a lower electrode of the radiation signal conversion element by the second metal layer; A step of sequentially stacking the insulating layer, the second semiconductor layer, and the second ohmic contact layer, and forming a connection hole penetrating at least the second insulating layer and the second semiconductor layer A step of laminating a third metal layer, a step of forming a bias wiring of the radiation signal conversion element by the third metal layer, a step of laminating a transparent electrode layer, and the transparent electrode layer, It includes a step of etching the second ohmic contact layer, a step of laminating a protective layer, and a step of forming a protective layer.
[0037]
Through the above steps, the sensitivity can be improved by improving the aperture ratio of the radiation detection apparatus, and at the same time, the manufacturing process is simplified, so that the cost is not increased and a high manufacturing yield can be achieved.
[0038]
DETAILED DESCRIPTION OF THE INVENTION
Next, embodiments of the present invention will be described with reference to the drawings.
[0039]
Example 1
First, a first embodiment of an X-ray detection apparatus using a MIS type PD will be described.
[0040]
FIG. 1 is a schematic plan view of one pixel when a photoelectric conversion element (radiation signal conversion element) is an MIS type PD. 202 is a switch TFT drive wiring, 204 is a gate electrode of the switch TFT, 208 is a sensor bias wiring, 210 is a signal line, 209 is a source / drain electrode (hereinafter abbreviated as SD electrode) of the switch TFT, and 303 is a second ohmic. A contact layer 304 is a transparent electrode layer.
[0041]
FIG. 2 is a schematic cross-sectional view in which elements in one pixel shown in FIG. 1 are typically arranged. For convenience of description of the manufacturing flow, a portion for connecting the switch TFT drive wiring and the signal line to the pad portion through the connection hole is also illustrated. 201 is a glass substrate, 202 is a switch TFT drive wiring, 204 is a switch TFT gate electrode, 205 is a first gate insulating film, 206 is a first intrinsic a-Si film, 207 is a first ohmic contact layer, 208 is Bias wiring, 209 is a transfer TFT SD electrode, 210 is a signal line, 220 is a protective film, 301 is a second gate insulating film, 302 is a second intrinsic a-Si film, 303 is a second ohmic contact layer, and 304 is A transparent electrode layer 306 is a connection hole.
[0042]
Next, a method for manufacturing the FPD of this example will be described.
[0043]
In the first step, the switch TFT drive wiring 202 and the switch TFT gate electrode 204 are formed on the glass substrate with the first metal layer. FIG. 3 is a schematic plan view thereof. As the first metal layer, Cr, Al, Mo, Ti, an Al—Nd alloy, and a laminated structure thereof are formed by a sputtering method.
[0044]
In the second step, a first gate insulating film 205, a first intrinsic a-Si film 206, and an insulating film for a channel stopper (etch stopper) are sequentially stacked by a plasma CVD method.
[0045]
In the third step, the channel stopper insulating film is etched by backside exposure.
[0046]
In the fourth step, an ohmic contact layer (n + layer) 207 is stacked by a plasma CVD method.
[0047]
In the fifth step, the second metal layer is laminated. As the second metal layer, Cr, Al, Mo, Ti, an Al—Nd alloy, and a laminated structure thereof are formed by a sputtering method.
[0048]
In the sixth step, the source / drain electrodes 209 and the signal lines 307 of the switch TFT and the lower electrode of the radiation signal conversion element are formed by resist work. FIG. 4 is a schematic plan view thereof.
[0049]
In the seventh step, the second gate insulating film 301, the second intrinsic a-Si film 302, and the second ohmic contact layer (n + layer) 303 are sequentially stacked by a plasma CVD method.
[0050]
In the eighth step, a contact hole (connection hole) 306 penetrating at least the second gate insulating film 301 and the second intrinsic a-Si film 302 is formed.
[0051]
In the ninth step, the third metal layer is laminated. As the third metal layer, Cr, Al, Mo, Ti, an Al—Nd alloy, and a laminated structure thereof are formed by a sputtering method.
[0052]
In the tenth step, the bias wiring 208 of the photoelectric conversion element is formed by resist work. FIG. 5 is a schematic plan view thereof.
[0053]
In the eleventh step, the transparent electrode layer 304 is laminated. As the transparent electrode layer, ITO (Indium Tin Oxide), ZnO, tin oxide (SnO ₂ ), or the like is used.
[0054]
In the twelfth step, the transparent electrode layer and the second ohmic contact layer are etched. FIG. 6 is a schematic plan view thereof.
[0055]
In the thirteenth step, a protective layer is stacked and a necessary region such as a wiring lead portion is removed.
[0056]
Thereafter, the phosphor is bonded with an organic resin or the like. As described above, the FPD of the present invention is manufactured.
[0057]
Further, as can be seen from FIGS. 3 to 6, this embodiment uses the same six masks as the conventional example. (1) First metal layer patterning; (2) Second metal layer patterning; (3) Connection hole patterning; (4) Third metal layer patterning; (5) Transparent electrode layer; For the ohmic contact layer patterning and (6) patterning of the protective layer.
[0058]
If such a manufacturing flow is used, it is possible to manufacture with the same number of masks as in the past, and it is possible to improve sensitivity by improving the aperture ratio. That is, since the manufacturing process is simple, the cost is not increased and a high manufacturing yield can be achieved.
[0059]
(Example 2)
Next, a second embodiment of the X-ray detection apparatus using the MIS type PD will be described.
[0060]
FIG. 7 is a schematic plan view of one pixel when the photoelectric conversion element is an MIS type PD. 202 is a switch TFT drive wiring, 204 is a gate electrode of the switch TFT, 208 is a sensor bias wiring, 210 is a signal line, 209 is a source / drain electrode (hereinafter abbreviated as SD electrode) of the switch TFT, and 303 is a second ohmic. A contact layer, 304 is a transparent electrode layer, and 305 is an element isolation part.
[0061]
FIG. 8 is a schematic cross-sectional view in which elements in one pixel shown in FIG. 7 are typically arranged. 201 is a glass substrate, 202 is a switch TFT drive wiring, 204 is a switch TFT gate electrode, 205 is a first gate insulating film, 206 is a first intrinsic a-Si film, 207 is a first ohmic contact layer, 208 is Bias wiring, 209 is a transfer TFT SD electrode, 210 is a signal line, 220 is a protective film, 301 is a second gate insulating film, 302 is a second intrinsic a-Si film, 303 is a second ohmic contact layer, and 304 is A transparent electrode layer, 305 is an element isolation part, and 306 is a connection hole.
[0062]
Next, a method for manufacturing the FPD of this example will be described.
[0063]
The second embodiment is the same as the first embodiment until the second gate insulating film, the second intrinsic a-Si film, and the second ohmic contact layer (n + layer) are sequentially stacked by the plasma CVD method.
[0064]
Next, a contact hole (connection hole) 306 is formed. At this time, pixel isolation is performed simultaneously with the formation of the contact hole.
[0065]
Next, a third metal layer is laminated. As the third metal layer, Cr, Al, Mo, Ti, an Al—Nd alloy, and a laminated structure thereof are formed by a sputtering method.
[0066]
Next, a bias wiring of the photoelectric conversion element is formed by resist work.
[0067]
Next, a transparent electrode layer is laminated. As the transparent electrode layer, ITO (Indium Tin Oxide), ZnO, tin oxide (SnO ₂ ), or the like is used.
[0068]
Next, the transparent electrode layer and the second ohmic contact layer are etched.
[0069]
Next, a protective layer is laminated, and a necessary region such as a wiring lead portion is removed.
[0070]
Thereafter, the phosphor is bonded with an organic resin or the like. As described above, the FPD of the present invention is manufactured.
[0071]
Furthermore, this embodiment uses the same six masks as the conventional example. Also, by separating the elements, crosstalk can be reduced as compared with the first embodiment.
[0072]
(Example 3)
FIG. 9 shows an application example of the radiation detection apparatus according to the present invention to an X-ray diagnosis system.
[0073]
The X-ray 6060 generated by the X-ray tube 6050 passes through the chest 6062 of the patient or subject 6061 and enters the radiation detection apparatus (image sensor) 6040. This incident X-ray includes information inside the body of the subject 6061. Corresponding to the incidence of X-rays, it is converted into visible light by a phosphor on the front or back surface, and this is photoelectrically converted to obtain an electrical signal. This electrical signal is digitally converted, image-processed by an image processor 6070, and can be observed on a display 6080 in a control room.
[0074]
Further, this image information can be transferred to a remote place by a transmission means such as a telephone line 6090, and can be displayed on a display 6081 such as a doctor room in another place or stored in a storage means such as an optical disk. It is also possible to do. It can also be recorded on the film 6110 by the film processor 6100.
[0075]
In the above embodiment, the X-ray imaging system has been described as an example, but the same applies to an apparatus configuration that converts radiation into light by a scintillator and photoelectrically converts the light. The radiation includes α, β, γ rays other than X-rays.
[0076]
【The invention's effect】
As described above, the present invention can be manufactured without increasing the number of process steps while simultaneously improving the aperture ratio by using a laminated structure. Moreover, crosstalk can be reduced by element isolation.
[Brief description of the drawings]
FIG. 1 is a schematic plan view of a first embodiment of the present invention.
2 is a schematic cross-sectional view of Example 1. FIG.
3 is a schematic plan view for explaining the manufacturing method of Example 1. FIG.
4 is a schematic plan view for explaining the manufacturing method of Example 1. FIG.
5 is a schematic plan view for explaining the manufacturing method of Example 1. FIG.
6 is a schematic plan view for explaining the manufacturing method of Example 1. FIG.
FIG. 7 is a schematic plan view of Example 2 of the present invention.
8 is a schematic cross-sectional view of Example 2. FIG.
FIG. 9 is a diagram showing an application example of the radiation detection apparatus according to the present invention to an X-ray diagnosis system.
FIG. 10 is a schematic equivalent circuit diagram of a conventional FPD.
FIG. 11 is a schematic plan view of one conventional pixel.
FIG. 12 is a schematic cross-sectional view of a conventional element array in one pixel.
FIG. 13 is a schematic plan view for explaining a conventional FPD manufacturing method.
FIG. 14 is a schematic plan view for explaining a conventional FPD manufacturing method.
FIG. 15 is a schematic plan view for explaining a conventional FPD manufacturing method.
FIG. 16 is a schematic plan view for explaining a conventional FPD manufacturing method.
FIG. 17 is a schematic plan view for explaining a conventional FPD manufacturing method.
FIG. 18 is a 1-bit equivalent circuit diagram of a conventional MIS FPD.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 101 Photoelectric conversion element part 102 Switch TFT part 103, 202 Switch TFT drive wiring 104, 210 Signal line 105, 208 Bias wiring 106 Signal processing circuit 107 TFT drive circuit 108 A / D conversion part 201 Glass substrate 203 MIS type PD lower electrode 204 Switch TFT gate electrode 205 Gate insulating film 206 Intrinsic a-Si film 207 Hole blocking layer 209 Switch TFT source / drain electrode 211 Contact hole 220 Protective film 221 Organic resin layer 222 Phosphor layer 301 Second gate insulating film 302 Second Intrinsic a-Si film 303 Second ohmic contact layer 304 Transparent electrode layer 305 Element isolation portion 306 Connection hole C1 Composite capacitance of MIS PD C2 Parasitic capacitance formed on signal line Vs Sensor bias potential Vr Sensor reset voltage Position SW1 Vs / Vr switch SW2 of MIS type PD SW2 ON / OFF switch SW3 of transfer TFT Signal line reset switch Vout Output voltage Vt Potential difference

Claims (4)

A radiation detection device comprising a radiation signal conversion element laminated on a switch TFT,
A gate electrode and a drive wiring of the switch TFT formed of a first metal layer;
A first insulating layer, a first semiconductor layer sequentially stacked on the first metal layer;
An ohmic contact layer stacked on the first semiconductor layer;
A source / drain electrode and a signal line of the switch TFT formed by a second metal layer laminated on the ohmic contact layer, and a lower electrode of the radiation signal conversion element;
A second insulating layer sequentially stacked on the ohmic contact layer or the second metal layer, a second semiconductor layer, and a second ohmic contact layer formed in a predetermined portion;
A connection hole formed through at least the second insulating layer and the second semiconductor layer;
A bias wiring of the radiation signal conversion element formed by a third metal layer laminated on the second ohmic contact layer;
A transparent electrode layer laminated on the bias wiring;
A protective layer formed on the upper surface;
A radiation detection apparatus comprising: 2. The radiation detection apparatus according to claim 1, wherein the switch TFT is an etch stopper type TFT. A radiation source for irradiating the subject or subject with radiation; and
The radiation detection apparatus according to claim 1 or 2, which detects the radiation,
Image processing means for digitally converting the detected signal and performing image processing;
A radiation imaging system comprising display means for displaying the processed image. A method of manufacturing a radiation detection apparatus in which a radiation signal conversion element is laminated on a switch TFT,
(A) forming a gate electrode and a drive wiring of the switch TFT with a first metal layer;
(B) sequentially stacking a first insulating layer, a first semiconductor layer, and an etch stop insulating layer;
(C) etching the etch stop insulating layer;
(D) laminating an ohmic contact layer;
(E) laminating a second metal layer;
(F) forming a source / drain electrode and a signal line of the switch TFT and a lower electrode of the radiation signal conversion element by a second metal layer;
(G) sequentially stacking a second insulating layer, a second semiconductor layer, and a second ohmic contact layer;
(H) forming a connection hole penetrating at least the second insulating layer and the second semiconductor layer;
(I) laminating a third metal layer;
(J) forming a bias wiring of the radiation signal conversion element by a third metal layer;
(K) laminating a transparent electrode layer;
(L) etching the transparent electrode layer and the second ohmic contact layer;
(M) a step of laminating a protective layer;
(N) forming a protective layer;
The manufacturing method of the radiation detection apparatus characterized by including.

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