JP2003347534A - Radiation detection apparatus and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the occurrence of an Al spike in a second metal layer (switch TFT source drain wiring) and an ohmic contact layer (n<SP>+</SP>layer), and to achieve the low-resistance contact between an MIS type PD lower electrode and the drain electrode of a switch TFT. <P>SOLUTION: A photoelectric conversion element (an MIS type PD section) and a switch TFT section are laminated in the order of a first electrode layer of the same member, an insulating layer 305, a semiconductor layer 306, an ohmic contact layer 307, a second electrode layer, and a third electrode layer. Additionally, the first electrode layer is connected to the third one by a connection hole 311, and the drain electrode of the switch TFT is directly connected to the MIS type PD lower electrode 303, thus achieving the low-resistance contact. <P>COPYRIGHT: (C)2004,JPO

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a radiation detecting apparatus using radiation such as X-rays and gamma rays, and a method of manufacturing the same.
The present invention relates to a radiation detection device suitable for a medical image diagnostic device, a nondestructive inspection device, an analysis device using radiation, and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, imaging methods used in medical image diagnosis are roughly classified into general imaging for obtaining a still image and fluoroscopy for obtaining a moving image. Each shooting method is as required
It is selected including the photographing device.

[0003] In general photography, that is, a method of obtaining a still image, using a screen film system (hereinafter abbreviated as S / F) combining a fluorescent plate and a film, exposing and developing the film, and then fixing the film, A method in which an image is recorded on a stimulable phosphor as a latent image, and then the laser is scanned over the stimulable phosphor, and the output light output information is read by a sensor (computed radiography, hereinafter abbreviated as CR). Is common.

[0004] However, both of these methods have a drawback that a workflow for obtaining a radiographic image is complicated, and digitization is indirectly possible, but lacks immediacy. C used in medical imaging
Considering the digitized environment such as T and MIR, it is hard to say that the situation is consistent and sufficient.

[0005] An image intensifier (hereinafter, abbreviated as II) using an electron tube is mainly used for fluoroscopy, that is, for a moving image. Not only that, the field of view, that is, the detection area is still small, and there is a strong demand for a larger area in the medical image diagnostic field. Furthermore, a moving image obtained from a problem in the device configuration has much crosstalk, and improvement to a clear image is expected.

[0006] On the other hand, with the advance of liquid crystal TFT technology and the improvement of information infrastructure, photoelectric conversion elements and switch TFTs using non-single-crystal silicon, for example, amorphous silicon (hereinafter abbreviated as a-Si). Flat panel detector (hereinafter abbreviated as FPD) that combines a sensor array composed of the above and a phosphor that converts radiation into visible light or the like
Has been proposed, and the possibility of realizing digitalization with a large area is emerging.

The FPD is capable of instantly reading a radiation image and instantly displaying it on a display. Since the image can be directly taken out as digital information, it is convenient to store, process, and transfer data. There is a feature that said. In addition, various characteristics such as sensitivity depend on imaging conditions, but it has been confirmed that the characteristics are equal to or higher than those of the conventional S / F imaging method and CR imaging method.

FIG. 4 is a schematic equivalent circuit diagram of a conventional FPD. In the figure, 101 is a photoelectric conversion element portion, 102 is a switch TFT portion, 103 is a switch TFT driving wiring, 104 is a signal line, 105 is a bias wiring, 106 is a signal processing circuit, 107 is a TFT driving circuit, and 108 is A / D conversion. Department.

Radiation such as X-rays enters from the upper part of the paper and is converted into visible light by a phosphor (not shown). The converted light is converted into electric charges by the photoelectric conversion unit 101, and
Accumulates inside. After that, the transfer TFT 102 is operated by the TFT drive circuit 107 through the TFT drive wiring 103. As a result, the charge stored in the photoelectric conversion element unit 101 is transferred to the signal line 104, processed by the signal processing circuit 106, A / D converted by the A / D conversion unit 108, and output.

[0010] Basically, the element configuration as described above is generally used. In particular, as a photoelectric conversion element, a PIN photodiode (hereinafter abbreviated as PIN PD) or MIS is used.
An element such as a photodiode (hereinafter abbreviated as MIS PD) is used. This MIS type PD is disclosed in, for example, Japanese Patent No. 3066944, US Pat.
5256 and the like.

FIG. 5 is a schematic plan view of one pixel when the MIS PD is used as the photoelectric conversion element. In the figure, 201 is MI
The lower electrode of the S-type PD portion, 202 is a switch TFT drive wiring, 203 is a switch TFT gate electrode, 204 is a contact hole (connection hole), 205 is a sensor bias wiring, 206 is a signal line, and 207 is a source and drain of the switch TFT. Electrode (hereinafter abbreviated as SD electrode).

FIG. 6 is a schematic sectional view showing a case where the elements in one pixel shown in FIG. 5 are schematically arranged. 3 in the figure
01 is a glass substrate, 302 is a switch TFT drive wiring,
303 is an MIS type PD lower electrode, 304 is a switch TF
T gate electrode, 305 is a gate insulating film, 306 is intrinsic a
-Si film, 307 is a hole blocking layer, 308 is a bias wiring, 309 is a switch TFT SD electrode, 31
0 is a signal line, 311 is a connection hole (contact hole), 3
Reference numeral 20 denotes a protective film, 321 denotes an organic resin layer, and 322 denotes a phosphor layer.

The lower electrode 303, switch TFT gate electrode 304, bias wiring 308, and signal line 310 of the MIS PD section in FIG. 6 are respectively the lower electrode 201, switch TFT gate electrode 203 of the MIS PD section in FIG. , The bias wiring 205 and the signal line 206.

Next, a method of manufacturing an FPD using a MIS type PD will be described with reference to FIGS. 6 and 7 (a) to 7 (e). Note that the reference numerals in FIG. 7 correspond to those in FIG. FIG. 7 shows a configuration of one pixel. A conventional FPD is manufactured by the following steps.

(1) First, a switch TFT drive wiring 2 is formed on a glass substrate 301 by a first metal layer (gate wiring).
02, lower electrode 201 of MIS type PD, switch TFT
A gate electrode 203 is formed. As the first metal layer,
A laminated film of an Al—Nd alloy and Mo is used. In the case of a single layer film, Cr, Al or the like is used. FIG. 7A shows a schematic plan view in this case.

(2) Next, the gate insulating film 305, intrinsic a
-An Si film 306 and a hole blocking layer (ohmic contact layer) 307 are sequentially laminated (see FIG. 6).

(3) A contact hole (connection hole) 204 for joining the MIS type PD lower electrode 201 and the switch TFT SD electrode 207 is formed. FIG. 7B shows a schematic plan view in this case.

(4) A second metal layer is laminated, and a bias wiring 205 is formed by the first resist work. At this time, a region where a switch TFT SD electrode 207 and a signal line 206 described later are formed is left as an island region 210. FIG. 7C shows a schematic plan view in this case. Second
Al or A as the metal layer (source / drain wiring)
A laminated film of 1 and Mo is used. As a laminated structure of Al and Mo, an Al (lower) / Mo (upper) structure, a Mo / Al / Mo structure used in a liquid crystal display device (for example, JP-A-2001-85698), and the like are used. .

(5) A switch TFT SD electrode 207 and a signal line 206 are formed by a second resist work.
Subsequently, the n ⁺ semiconductor layer is removed. That is, a gap is formed between the switch TFT SD electrodes, and
The n + semiconductor layer of the S-type PD is left as an electrode as indicated by 211. FIG. 7D shows a schematic plan view in this case.

(6) Next, isolation between elements is performed. FIG.
(E) shows a schematic plan view in this case.

(7) Finally, the protective layer 320 is laminated, and a necessary region such as a wiring lead portion is removed. After that, the phosphor layer 322 is attached with the organic resin layer 321 or the like.

As is clear from FIGS. 5 and 6, the FPD manufactured as described above has the same layer structure as the MIS type PD and the switch TFT, so that the manufacturing method is simple, high yield, and low cost. There is an advantage that can be realized. Moreover, it has been evaluated that various characteristics such as sensitivity can be sufficiently satisfied.
As an apparatus used for general photographing, the above-mentioned FPD has been adopted in place of the conventional S / F method and CR method.

FIG. 8 shows a 1-bit equivalent circuit of the FPD using the MIS type PD. In the figure, C1 is the combined capacitance of the MIS type PD, C2 is the parasitic capacitance formed on the signal line, Vs is the sensor bias potential, Vr is the sensor reset potential, SW1
Is a Vs / Vr switch of MIS type PD, SW2
Is a switch TFT ON / OFF switch, SW3
Is a signal line reset switch, and Vout is an output voltage.

In the MIS PD, the potential Vr is set by the switch SW1 so that the semiconductor layer is depleted as a bias potential.
Is given. In this state, when the converted light from the phosphor enters the semiconductor layer, the positive charges blocked by the hole blocking layer are accumulated in the a-Si layer, and a potential difference Vt is generated. Thereafter, the switch TFT is switched by the switch SW2.
An ON voltage is applied and output as a voltage Vout. The output Vout is read by a read circuit (not shown) (the signal processing circuit 106 in FIG. 4), and thereafter, the signal line is reset by the switch SW3.

By sequentially turning on the switch TFTs for each line in FIG. 4 in accordance with the above-described driving method, the entire reading of one frame is completed. After that, the reset potential Vr is applied to the MIS PD by the switch SW1 to perform reset. Further, the bias potential Vs is applied again to perform the image reading accumulation operation. In this way, an image using radiation is obtained.

[0026]

However, in the above-mentioned conventional FPD, when Al is used as the second metal layer (source / drain wiring), as shown in FIG. 9A, a hole blocking layer (an ohmic contact layer) is formed. (N
⁺ Layer)) 307 is the second metal layer (switch T
Since it diffuses into Al of the FT SD drain electrode 309), Al spikes occur at the interface of the hole blocking layer 307, and there is a problem that yield and reliability are reduced.

As a countermeasure against spikes, as shown in FIG.
In the case of a laminated structure of (Al) and 309 (Mo), since Mo functions as a barrier metal, Al spikes can be prevented, but the resistance of Mo increases. Therefore, the MIS type PD lower electrode 303 which is the first metal layer
There is a problem that the contact resistance with the drain electrode of the switch TFT as the second metal layer increases.

The present invention has been made in view of the above-mentioned conventional problems, and has as its object to prevent Al spikes in the second metal layer (source / drain wiring) and the ohmic contact layer (n ⁺ layer), and Another object of the present invention is to provide a radiation detection device capable of making low-resistance contact between a drain electrode of a switch TFT and a MIS PD lower electrode, and a method of manufacturing the same.

[0029]

According to the present invention, there is provided a phosphor for converting a radiation signal into visible light.
In a radiation detection device including a photoelectric conversion element that converts the visible light into an electric signal and a switch TFT that reads a signal from the photoelectric conversion element, the photoelectric conversion element and the switch TFT are each formed of a first metal layer of the same member. , Insulating layer,
A semiconductor layer, an ohmic contact layer, a second metal layer, and a third metal layer are stacked in this order, and the first metal layer and the third metal layer are connected by a connection hole. I do.

According to another aspect of the present invention, there is provided a phosphor for converting a radiation signal into visible light, a photoelectric conversion element for converting the visible light into an electric signal, and reading a signal from the photoelectric conversion element. In the method for manufacturing a radiation detection device having a switch TFT, (1) a first
Forming a lower electrode of the photoelectric conversion element, a gate electrode of the switch TFT, and a drive wiring of the switch TFT with the metal layer of (2), sequentially stacking an insulating layer, a semiconductor layer, and an ohmic contact layer; (3) Laminating a second metal layer, (4) forming a connection hole, (5)
Laminating a third metal layer on the second metal layer,
(6) forming a bias wiring of the photoelectric conversion element, a source / drain electrode of the switch TFT, and a signal line with the second metal layer and the third metal layer.

[0031]

Next, embodiments of the present invention will be described in detail with reference to the drawings.

(First Embodiment) FIG. 1 shows an MIS of the present invention.
FIG. 2 is a schematic cross-sectional view illustrating a first embodiment of the radiation detection device using the mold PD. FIG. 1 shows a schematic cross section when each element in one pixel is schematically arranged. Also, 1
The plan view of the pixel is the same as that of the conventional case of FIG. In FIG. 1, reference numeral 301 denotes a glass substrate (insulating substrate), 302 denotes a switch TFT drive wiring, 303 denotes a MIS type PD lower electrode, 304 denotes a switch TFT gate electrode, 305 denotes a gate insulating film, 306 denotes an intrinsic a-Si film, and 307 denotes a gate insulating film. Is a hole blocking layer, 45 and 46 are signal lines, 311 is a connection hole (contact hole), 320 is a protective film, 321 is an organic resin layer, and 322 is a phosphor layer.

In this embodiment, the bias wiring of the MIS type PD section is a laminated structure of the Mo bias wiring 42 and the Al bias wiring 41, and the switch TFT SD electrode is the Mo switch TFT SD electrode 43 and the Al switch TFT.
The stacked structure of the SD electrode 44 and the signal line have a stacked structure of the Mo signal line 45 and the Al signal line 46.

As described above, in this embodiment, the switch TF
Since the surface of the hole blocking layer 307 is covered with the Mo layer 43 by forming the TSD electrode in a laminated structure,
Mo acts as a barrier metal and can prevent Al spikes. In addition, the Al layer 44 constituting the drain electrode of the switch TFT is
Since it is directly connected to the IS-type PD lower electrode 303, a low-resistance contact between the drain electrode of the switch TFT and the MIS-type PD lower electrode can be realized. The bias wiring and the signal line have a laminated structure for convenience in manufacturing.

Here, FIG. 1 shows the configuration of one pixel. However, actually, as shown in FIG. 4, a plurality of pixels of FIG. 1 are two-dimensionally arranged, and the TFT drive is performed similarly to FIG. wiring,
A radiation detection device is configured using a signal line, a bias wiring, a signal processing circuit, a TFT driving circuit, an A / D converter, a phosphor that converts radiation into visible light, and the like. X-rays, α-rays, γ-rays, and the like can be used as the radiation. These are the same in the following embodiments.

Next, a method of manufacturing the radiation detecting apparatus according to the present invention will be described with reference to FIGS. 1 and 2 (a) to 2 (e).
FIG. 2 shows a configuration of one pixel. In the present embodiment, the radiation detection device is manufactured in the following steps.

(1) First, a first metal layer is laminated on a glass substrate 301 by a sputtering method, and the switch TFT drive wiring 202, the MIS type PD lower electrode 201, and the switch TFT
A gate electrode 203 is formed. As the first metal layer,
In the case of a single layer film, Cr, Al or the like is used. The first
May be used as the metal layer of (1), a laminated film of Al-Nd alloy (lower; glass substrate side) and Mo (upper). FIG.
(A) shows a schematic plan view in this case. The switch TFT drive wiring 202, the MIS type PD lower electrode 201, and the switch TFT gate electrode 203 in FIG.
It corresponds to the IS type PD lower electrode 303 and the switch TFT gate electrode 304.

(2) Next, the gate insulating film 305, intrinsic a
An Si film 306 and a hole blocking layer (ohmic contact layer) 307 are sequentially laminated (see FIG. 1).

(3) Second metal layers 42 and 4 made of Mo
3 and 45 are laminated by a sputtering method. As the second metal layer, a refractory metal layer such as Ti, TiN, Ta, TaN, M
oTa, MoW, etc. may be used.

(4) Mo is etched by a wet etching method to form a contact hole (connection hole) 204 for joining the MIS type PD lower electrode 201 and the switch TFT SD electrode 207. Then, using the same resist, RIE (Reactive Ion Etching) or C
Hole blocking layer (ohmic contact layer) by dry etching method such as DE (Chemical Dry Etching)
307, the intrinsic a-Si film 306, and the gate insulating film 305 are etched.

For etching the contact holes (connection holes), CF ₄ ⁺ O ₂ or SF ₆ ⁺ O ₂ gas is used, and the substrate temperature is set at 25 to 35 ° C. FIG. 2B shows a schematic plan view in this case. The contact hole 204 and the switch TFT SD electrode 207 in FIG. 2 correspond to the contact hole 311 and the switch TFT SD electrodes 43 and 44 in FIG.

(5) Next, a third metal layer 4 made of Al
1, 44 and 46 are stacked by a sputtering method, and a bias wiring 205 is formed by a first photolithography method.
At this time, a region where a switch TFT SD electrode 207 and a signal line 206 described later are formed is left as an island region 210. Note that a stacked structure of Al (lower) / Mo (upper) can be used as the third metal layer. In this case, it is preferable to use the same material for the third metal layer and the first metal layer in order to reduce the contact resistance between the MIS PD lower electrode and the drain electrode of the switch TFT. FIG. 2C shows a schematic plan view in this case. 1. The bias wiring 205 and the signal line 206 in FIG. 2 correspond to the bias wirings 41 and 42 and the signal lines 45 and 46 in FIG.

(6) The switch TFT SD electrode 207 and the signal line 206 are formed by the second photolithography method, and subsequently, the n ⁺ semiconductor layer is removed. That is, a gap portion is formed between the switch TFT SD electrodes, and at the same time, the n ⁺ semiconductor layer of the MIS type PD portion is left as an electrode as shown by 211. FIG. 2D shows a schematic plan view in this case.

(7) Isolation between elements is performed. FIG. 2E shows a schematic plan view in this case.

(8) SiN film 25 as protective film 320
A film of 00 to 10000 ° is formed by a plasma CVD method.

(9) The wiring lead portion and the like are exposed by a photolithography method using RIE or CDE.
After that, the phosphor layer 322 is bonded with the organic resin layer 321 to complete the FPD according to the present embodiment.

(Second Embodiment) Next, the MIS of the present invention will be described.
A second embodiment of the radiation detecting apparatus using the type PD will be described. FIG. 3 is a schematic cross-sectional view when the elements in one pixel according to the present embodiment are schematically arranged. In addition,
1 are denoted by the same reference numerals. The plan view is the same as that of FIG. 3, reference numeral 301 denotes a glass substrate (insulating substrate), 302 denotes a switch TFT drive wiring, 303 denotes an MIS type PD lower electrode, 304 denotes a switch TFT gate electrode, 305 denotes a gate insulating film, 306 denotes an intrinsic a-Si film, and 307 denotes a gate insulating film. Is a hole blocking layer, 45,
46 is a signal line, 311 is a connection hole (contact hole),
320 is a protective film, 321 is an organic resin layer, and 322 is a phosphor layer.

Further, reference numeral 41 denotes a third metal layer (bias wiring) made of Al, reference numeral 42 denotes a second metal layer (bias wiring) made of Mo, and reference numeral 43 denotes a second metal layer made of Mo (switch TFT SD electrode). ) And 44 are third metal layers (switch TFT SD electrodes) made of Al. Reference numeral 45 denotes a second metal layer (signal line) made of Mo;
Is a third metal layer (signal line) made of Al.

Further, in this embodiment, as the first metal layer, an Al—Nd alloy (lower portion; glass substrate 301 side) and M
An o (upper) laminated film is used. Even if the first metal layer has a laminated structure, the Mo layer of the contact hole 311 is removed as shown in FIG.
A low-resistance contact between the lower electrode and the drain electrode of the switch TFT is possible.

Next, a method for manufacturing the radiation detecting apparatus according to the present embodiment will be described in detail with reference to FIGS.

(1) First, a first metal layer is laminated on a glass substrate 301 by a sputtering method, and as shown in FIG. 2A, a switch TFT drive wiring 202, a MIS type PD lower electrode 201, a switch TFT gate An electrode 203 is formed.
As the first metal layer, Al—Nd alloy (lower) and Mo
The (upper) laminated film is used. The switch TFT drive wiring 202 and the MIS type PD lower electrode 20 in FIG.
1. The switch TFT gate electrode 203 is shown in FIG.
TFT drive wiring 302, MIS type PD
It corresponds to the lower electrode 303 and the switch TFT gate electrode 304.

(2) Next, a gate insulating film 305, an intrinsic a-Si film 306, and a hole blocking layer (ohmic contact layer) 307 are sequentially laminated (see FIG. 3).

(3) A second metal layer made of Mo is laminated by a sputtering method. The second metal layer is a high melting point metal layer, and may be Ti, TiN, Ta, TaN, MoTa, MoW, or the like.

(4) Mo is etched by a wet etching method to form a contact hole (connection hole) 204 for joining the MIS type PD lower electrode 201 and the switch TFT SD electrode 207. Next, using the same resist, RIE (Reactive Ion Etching),
Alternatively, a hole blocking layer (ohmic contact layer) 307, an intrinsic a-Si film 306, and a gate insulating film 3 are formed by a dry etching method such as CDE (Chemical Dry Etching).
05 is etched. When using CDE, CF ₄ ⁺
The substrate temperature is set to 25 to 35 ° C. using O ₂ gas.

Next, using the same resist, the Mo layer as the upper metal of the first metal layer is etched. For this etching, SF ₆ ⁺ O ₂ gas is used, and the substrate temperature is 60 to 80 ° C. The schematic plan view in this case is shown in FIG.
(B). The contact hole 204 in FIG.
The switch TFT SD electrode 207 corresponds to the contact hole 311 and the switch TFT SD electrodes 43 and 44 in FIG.

(5) A third metal layer made of Al is laminated by a sputtering method, and a bias wiring 205 is formed by a first photolithography method. At this time, a region where a switch TFT SD electrode 207 and a signal line 206 described later are formed is left as an island region 210. FIG. 2C is a schematic plan view in this case. Note that A is used as the third metal layer.
It is also possible to use a laminated structure of 1 (lower) / Mo (upper). Note that the bias wiring 205 and the signal line 206 in FIG.
It corresponds to the signal lines 45 and 46.

(6) The switch TFT SD electrode 207 and the signal line 206 are formed by the second photolithography method, and subsequently, the n ⁺ semiconductor layer is removed. That is, a gap portion is formed between the switch TFT SD electrodes, and at the same time, the n ⁺ semiconductor layer of the MIS type PD portion is left as an electrode as shown by 211. FIG. 2D is a schematic plan view in this case.
It is.

(7) Isolation between elements is performed. FIG. 2E is a schematic plan view in this case.

(8) As the protective film 320, the SiN film 25
A film of 00 to 10000 ° is formed by a plasma CVD method.

(9) The wiring lead portion and the like are exposed by a photolithography method using RIE or CDE.
Thereafter, the phosphor layer 322 is bonded using the organic resin layer 321 to complete the FPD of the present embodiment.

In the present embodiment, Al spikes can be prevented from occurring as in the first embodiment, and even when the first metal layer has a laminated structure, the Mo of the first metal layer in the contact hole 311 can be prevented. Since the layer has been removed, M
A low-resistance contact between the lower electrode of the IS-type PD and the drain electrode of the switch TFT can be realized.

[0062]

As described above, according to the present invention, the occurrence of Al spikes in the source / drain wiring of the switch TFT and the ohmic contact layer (n ⁺ layer) can be prevented, and the yield and reliability are improved. can do.
Further, a low-resistance contact between the lower electrode of the MIS PD and the drain electrode of the switch TFT can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a manufacturing method according to the first embodiment of the present invention.

FIG. 3 is a schematic sectional view showing a second embodiment of the present invention.

FIG. 4 is a schematic equivalent circuit diagram showing a conventional FPD.

FIG. 5 is a schematic plan view of one pixel when an MIS PD is used as a photoelectric conversion element.

FIG. 6 is a schematic cross-sectional view when elements in one pixel in FIG. 5 are schematically arranged.

FIG. 7 is a view for explaining a method of manufacturing an FPD using a conventional MIS type PD.

FIG. 8 is a 1-bit equivalent circuit diagram of an FPD using a conventional MIS type PD.

FIG. 9 is a diagram illustrating a problem of an FPD using a conventional MIS type PD.

[Explanation of symbols]

101 Photoelectric conversion element 102 switch TFT part 103, 202, 302 Switch TFT drive wiring 104, 206, 310 signal lines 105, 205, 308 Bias wiring 106 signal processing circuit 107 TFT drive circuit 108 A / D converter 201, 303 MIS type PD lower electrode 203, 304 switch TFT gate electrode 204, 311 Contact hole 207 switch TFT SD electrode 301 glass substrate 305 Gate insulating film 306 Intrinsic a-Si film 307 Hole blocking layer 320 Protective film 321 Organic resin layer 322 phosphor layer 41 Third metal layer (bias wiring) 42 Second metal layer (bias wiring) 43 Second metal layer (Switch TFT SD electrode) 44 Third metal layer (switch TFT SD electrode)

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 29/78 613Z F-term (Reference) 2G088 EE01 FF02 FF04 GG19 JJ05 JJ33 JJ37 4M118 AA10 AB01 BA05 CA02 CA19 CA33 CB06 CB11 FB03 FB09 FB13 FB24 FB25 FB30 GA10 5F110 AA03 AA26 BB01 BB10 CC07 DD02 EE03 EE04 EE06 EE14 EE44 GG02 GG15 GG35 HK01 HK03 HK04 HK06 HK09 HK16 HK21 HK22 HK33 NN03 NN11 NN03 HL03 NN03 NN03 NN03 NN03 NN03 NN03 NN03 HL03

Claims (5)

[Claims] A phosphor for converting a radiation signal into visible light; a photoelectric conversion element for converting the visible light into an electric signal;
In the radiation detection device having a switch TFT for reading a signal of the photoelectric conversion element, the photoelectric conversion element and the switch TFT are respectively formed of a first metal layer, an insulating layer, a semiconductor layer, an ohmic contact layer, a second A radiation detection device, wherein a metal layer and a third metal layer are stacked in this order, and the first metal layer and the third metal layer are connected by a connection hole. 2. The radiation detecting apparatus according to claim 1, wherein the first metal layer and the third metal layer are made of the same material. 3. The radiation detecting apparatus according to claim 1, wherein the second metal layer is a high melting point metal layer. 4. A phosphor for converting a radiation signal into visible light, a photoelectric conversion element for converting the visible light into an electric signal,
In the method for manufacturing a radiation detection device having a switch TFT for reading a signal of the photoelectric conversion element, (1) a lower electrode of the photoelectric conversion element, a gate electrode of the switch TFT, and a switch by using a first metal layer on an insulating substrate. (2) a step of sequentially laminating an insulating layer, a semiconductor layer, and an ohmic contact layer; (3) a step of laminating a second metal layer; (4) a step of forming a connection hole; (5) a step of laminating a third metal layer on the second metal layer; (6) a bias wiring of the photoelectric conversion element and a source of the switch TFT by the second metal layer and the third metal layer. -A method for manufacturing a radiation detection apparatus, comprising: forming a drain electrode and a signal line. 5. The method according to claim 4, wherein the second metal layer is laminated, and then a connection hole is formed.