JP4016969B2 - 試料作製装置および試料作製方法 - Google Patents

試料作製装置および試料作製方法 Download PDF

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Publication number
JP4016969B2
JP4016969B2 JP2004167929A JP2004167929A JP4016969B2 JP 4016969 B2 JP4016969 B2 JP 4016969B2 JP 2004167929 A JP2004167929 A JP 2004167929A JP 2004167929 A JP2004167929 A JP 2004167929A JP 4016969 B2 JP4016969 B2 JP 4016969B2
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Japan
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sample
stage
tem
extracted
ion beam
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JP2004167929A
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Japanese (ja)
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JP2004309499A (ja
JP2004309499A5 (enExample
Inventor
馨 梅村
英巳 小池
聡 富松
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Hitachi Ltd
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Hitachi Ltd
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JP2004167929A 2004-06-07 2004-06-07 試料作製装置および試料作製方法 Expired - Fee Related JP4016969B2 (ja)

Priority Applications (1)

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JP2004167929A JP4016969B2 (ja) 2004-06-07 2004-06-07 試料作製装置および試料作製方法

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JP2004167929A JP4016969B2 (ja) 2004-06-07 2004-06-07 試料作製装置および試料作製方法

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JP33368198A Division JP3633325B2 (ja) 1998-11-25 1998-11-25 試料作製装置および試料作製方法

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JP2004309499A JP2004309499A (ja) 2004-11-04
JP2004309499A5 JP2004309499A5 (enExample) 2005-07-07
JP4016969B2 true JP4016969B2 (ja) 2007-12-05

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JP2004167929A Expired - Fee Related JP4016969B2 (ja) 2004-06-07 2004-06-07 試料作製装置および試料作製方法

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5033314B2 (ja) 2004-09-29 2012-09-26 株式会社日立ハイテクノロジーズ イオンビーム加工装置及び加工方法
JP4185062B2 (ja) 2005-03-04 2008-11-19 エスアイアイ・ナノテクノロジー株式会社 加工用ステージ及び集束ビーム加工装置並びに集束ビーム加工方法
JP4628153B2 (ja) * 2005-03-18 2011-02-09 富士通株式会社 ナノレベル構造組成観察装置及びナノレベル構造組成観察方法
JP5127148B2 (ja) 2006-03-16 2013-01-23 株式会社日立ハイテクノロジーズ イオンビーム加工装置
JP5710887B2 (ja) * 2010-03-18 2015-04-30 株式会社日立ハイテクサイエンス 複合荷電粒子加工観察装置
CN109283027B (zh) * 2018-11-05 2023-10-13 长沙岱勒新材料科技股份有限公司 金刚线金相试样制作装置及方法

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