JP4009407B2 - Cleaning method for substrate processing apparatus - Google Patents
Cleaning method for substrate processing apparatus Download PDFInfo
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- JP4009407B2 JP4009407B2 JP2000129498A JP2000129498A JP4009407B2 JP 4009407 B2 JP4009407 B2 JP 4009407B2 JP 2000129498 A JP2000129498 A JP 2000129498A JP 2000129498 A JP2000129498 A JP 2000129498A JP 4009407 B2 JP4009407 B2 JP 4009407B2
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- 239000000758 substrate Substances 0.000 title claims description 29
- 238000004140 cleaning Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 21
- 239000011538 cleaning material Substances 0.000 claims description 20
- 229920006015 heat resistant resin Polymers 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 229920000642 polymer Polymers 0.000 claims description 5
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 3
- 239000004693 Polybenzimidazole Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 229920002480 polybenzimidazole Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- -1 polyphenylene Polymers 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 239000000126 substance Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000002966 varnish Substances 0.000 description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000009477 glass transition Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001718 carbodiimides Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- ZUZGODUFPWDRMR-UHFFFAOYSA-N 4-[2-[4-[1-(4-aminophenyl)propan-2-ylidene]cyclohexa-2,5-dien-1-ylidene]propyl]aniline Chemical compound C1=CC(=C(C)CC=2C=CC(N)=CC=2)C=CC1=C(C)CC1=CC=C(N)C=C1 ZUZGODUFPWDRMR-UHFFFAOYSA-N 0.000 description 1
- YMKWWHFRGALXLE-UHFFFAOYSA-N 4-methyl-1-phenyl-2,3-dihydro-1$l^{5}-phosphole 1-oxide Chemical compound C1CC(C)=CP1(=O)C1=CC=CC=C1 YMKWWHFRGALXLE-UHFFFAOYSA-N 0.000 description 1
- OJZDWCDQNYUXQP-UHFFFAOYSA-N 4-methyl-1-phenyl-2,3-dihydrophosphole Chemical compound C1CC(C)=CP1C1=CC=CC=C1 OJZDWCDQNYUXQP-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- AHWALFGBDFAJAI-UHFFFAOYSA-N phenyl carbonochloridate Chemical compound ClC(=O)OC1=CC=CC=C1 AHWALFGBDFAJAI-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- ILWRPSCZWQJDMK-UHFFFAOYSA-N triethylazanium;chloride Chemical compound Cl.CCN(CC)CC ILWRPSCZWQJDMK-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
Landscapes
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
Description
【０００１】
【発明の属する技術分野】
本発明は、各種装置をクリーニングする方法に関し、例えば、半導体、フラットパネルディスプレイ、プリント基板などの製造装置や検査装置など、異物を嫌う基板処理装置などのクリーニング方法に関する。
【０００２】
【従来の技術】
各種基板処理装置は、各搬送系と基板とを物理的に接触させながら搬送する。その際、基板や搬送系に異物が付着していると、後続の基板を次々に汚染することになり、定期的に装置を停止させ、洗浄処理をする必要があった。このため、稼働率低下や多大な労力が必要になるという問題があった。これらの問題を解決するため、粘着性の物質を固着した基板を搬送することにより基板処理装置内の付着した異物をクリーニング除去する方法が提案されている（例えば特開平１０−１５４６８６号）。
【０００３】
【発明が解決しようとする課題】
粘着性の物質を固着した基板を搬送することにより基板処理装置内の付着した異物をクリーニング除去する方法は、前述の課題を克服する有効な方法である。しかしこの方法ではクリーニング層として粘着剤物質を用いているため、粘着性物質と装置接触部とが強く接着しすぎて剥れない恐れがあり、基板を確実に搬送できなくなる恐れがあった。
さらに、通常粘着剤はガラス転移温度が１５０℃未満であるため、１５０℃以上かかる装置、例えばオゾンアッシャー、レジストコーター、酸化拡散炉、常圧ＣＶＤ（Chemical Vapor Deposition）装置、減圧ＣＶＤ装置、プラズマＣＶＤ装置などにおいては、耐熱性に劣り使用できない場合があるという問題があった。
また、基板にクリーニング層として粘着剤層を固着したものを装置内に搬送してクリーニングする方法の場合、クリーニング後、基板を回収しなけらばならず、使用済のクリーニング層を剥離分別するコストと手間がかかるという問題もあった。
本発明は、このような事情に照らし、特に基板処理装置内の温度が１５０℃以上ある装置内にも確実に搬送できると共に、該装置内に付着している異物を簡便かつ確実に除去できる上、さらにクリーニング後の基板の再利用上の問題もないクリーニング方法を提供することを目的としている。
【０００４】
【課題を解決するための手段】
本発明者らは、上記の目的を達成するために鋭意検討した結果、装置内の付着した異物をクリーニング除去するにあたり、耐熱性樹脂材からなるクリーニング材を装置内に搬送して被洗浄部位に接触させることにより、前記問題を生じることなく、さらに異物を簡便かつ確実に剥離除去できることを見出し、本発明を完成するに至つた。
【０００５】
即ち、本発明は、基板処理装置のクリーニング方法において、ポリキノキサリン、ポリベンゾイレンベンズイミダゾール、ポリフェニレン、ポリアミド、ポリイミド、ポリベンズイミダゾール、ポリカルボジイミドの中から選ばれる芳香族ポリマーを塗工し乾燥してフィルム化した、ガラス転移温度が２００℃以上の耐熱性樹脂材からなるクリーニング材を装置内に搬送して被洗浄部位に接触させてクリーニングすることを特徴とする基板処理装置のクリーニング方法（請求項１）、クリーニング材が、シート状であることを特徴とする基板処理装置のクリーニング方法（請求項２）、クリーニング材が、搬送部材の形状であることを特徴とする基板処理装置のクリーニング方法（請求項３）に係るものである。
【０００６】
【発明の実施の形態】
本発明のクリーニング方法に用いるクリーニング材は、耐熱性樹脂材、即ち耐熱性のある高分子樹脂からなる。かかる耐熱性樹脂は、高温下での搬送に耐えうることが必要であることから、そのガラス転移温度（以下、Ｔｇということがある）が１５０℃以上、特に２００℃以上であることが好ましい。Ｔｇが１５０℃未満であると、加温した装置内への搬送時にステージなどと吸着し搬送できないおそれがある。
該耐熱性樹脂は、上記の耐熱性を有する限り特に限定されないが、例えば、ポリキノキサリン、ポリベンゾイレンベンズイミダゾールなどのラダーポリマーや、ポリフェニレン、ポリアミド、ポリイミド、ポリベンズイミダゾール、ポリカルボジイミドなどの芳香族ポリマーなどが挙げられる。
特に、カルボジイミドは、４００℃以上の高温にさらしても揮発性ガスや分解モノマーを生成しないという点で、本発明で用いるクリーニング材として好適である。その中でも特に特願平１０−３０５２０１号記載の下式（１）
【化１】
またクリーニング材の厚さは特に限定されないが、一般に１００〜１０００μｍ程度で適宜選択することができる。厚さが小さすぎるとクリーニング材の剛直性が低くなり搬送しにくくなる場合があり、逆に大きすぎると装置内を搬送する際にアライナーでの確認ができない恐れがある。
【０００７】
また、上記クリーニング材には、その耐熱性を損なわない範囲で、表面平滑性を出すための平滑剤、レベリング剤、脱泡剤などの各種添加剤を必要に応じて添加してもよい。 また、導電性の付与や弾性率の調整、特に高弾性率化などを図るために、例えばアルミナ、シリカ、マグネシア、窒化ケイ素などのセラミック、その他カーボンなどからなる種々の無機粉末を必要に応じて１種又は２種以上配合してもよい。
【０００８】
またクリーニング材の形状は特に限定されず、シート状、装置内に搬送される処理基板などの搬送部材の形状などとすることができる。 かかる搬送部材としては、特に限定されないが、半導体ウエハ、ガラス基板、ＬＣＤ、ＰＤＰなどのフラットパネルディスプレイ用基板、その他コンパクトディスク、ＭＲヘッドなどの基板などが挙げられる。
【０００９】
本発明で用いるクリーニング材の製法は、特に限定されないが、例えば、耐熱性樹脂ワニスをシリコン基板上などに、公知の方法（キャスティング、スピンコーティング、ロールコーティングなど）を用いて、適当な厚さに塗工し、溶媒の除去に必要な温度で乾燥することで得られる。 例えば、乾燥温度は２０〜３５０℃、好ましくは５０〜２５０℃、最も好ましくは７０〜２００℃である。 乾燥温度が２０℃より低いと、樹脂中に溶剤が残存し、クリーニング性能が乏しくなる場合がある。 乾燥温度が３５０℃より高いと、耐熱性樹脂材の熱硬化が進む場合があり、樹脂の収縮や劣化が生じる場合があり好ましくない。
【００１０】
本発明においては、上記耐熱性を有するクリーニング材自体を装置内に搬送して、被洗浄部位に接触させてクリーニングすることができる。
【００１１】
【実施例】
以下、本発明を実施例に基づいて説明するが、本発明はこれらに限定されるものではない。 なお、以下、部とあるのは重量部を意味するものとする。
実施例１
攪拌装置、滴下漏斗、還流冷却器を取付けた５００ｍｌの四つ口フラスコに、１、４−ビス（４−アミノフェニルイソプロピリデン）ベンゼン（１７ｇ、４９．３５ｍｍｏｌ）、トリエチルアミン（９．９９ｇ、９８．７０ｍｍｏｌ）、テトラヒドロフラン１４６．２４ｇを仕込んだ。 フラスコを氷浴で冷却し、滴下漏斗にフェニルクロロホルメート（１５．４５ｇ、９８．７０ｍｍｏｌ）を入れ、１分かけて滴下した。 その後室温で１２０分間攪拌した。
カーバメートの生成をＩＲで確認した後、トリメチルクロロシラン（１０．７２ｇ、９８．７０ｍｍｏｌ）、トリエチルアミン（９．９９ｇ、９８．７０ｍｍｏｌ）、カルボジイミド化触媒（３−メチル−１−フェニル−２−ホスホレン−１−オキシド）（４７２．２ｍｇ、２．４７ｍｍｏｌ）を仕込み、６０℃で１時間、続いて６７℃で７時間攪拌してイソシアネート化及び重合を行った。
ＩＲスペクトルによりカルボジイミド化（式１の構造）を確認し、生成したトリエチルアミン塩酸塩を濾過により除去し、ワニスを得た。
上記ワニスをガラス板上にキャスティングし、９０℃にて３０分間、さらに２５０℃で３０分間乾燥してかとう性を有するフィルムを得た。 得られたフィルムの熱的特性を評価したところ、ガラス転移温度は、２２０．８℃であった。
【００１２】
上記ワニスを、８インチシリコンウエハ上にスピンコートにより塗工し、９０×３０ｍｉｎ、次いで２５０℃×３０ｍｉｎで乾燥して、厚みが４００μｍである８インチサイズの耐熱性樹脂材を作製した。 この後、この耐熱性樹脂材をシリコンウエハより剥離し、８インチサイズのクリーニング材とした。
得られたクリーニング材を、装置内の温度が２００℃に加温されているオゾンアッシャー内をクリーニング搬送させたところ、クリーニング材は問題なく搬送でき、搬送前に８インチウエハ内で０．２μｍ以上で２４０００個あった異物が、搬送後に６０００個まで減少しており、クリーニング効果が確認できた。
【００１３】
比較例１
２、４−トリレンジイソシアネート／２、６−トリレンジイソシアネート混合物（混合割合９０：１０）５ｇ（２８．７ｍｍｏｌ）を、テトラヒドロフラン２０ｇ中でカルボジイミド化触媒（３−メチル−１−フェニル−２−ホスホレン−１−オキシド）４３ｍｇ（０．２２ｍｍｏｌ）とともに６０℃で１５時間攪拌し、ポリカルボジイミド溶液を得た。
該ポリマー溶液をガラス板上にキャスティングし、９０℃で３０分間乾燥してフィルムを作製した。 得られたフィルムの熱的特性を評価したところ、Ｔｇは５３℃であった。
上記ワニスを実施例１と同様、８インチシリコンウエハ上にスピンコートにより塗工し、９０×３０ｍｉｎで乾燥して、厚みが４００μｍである８インチサイズの耐熱性樹脂材を作製し、この後、耐熱性樹脂材をシリコンウエハより剥離し、８インチサイズのクリーニング材とした。
得られたクリーニング材を、実施例１と同様に、装置内の温度が２００℃に加温されているオゾンアッシャー内を搬送させたところ、ウエハステージに固着し、搬送できなくなった。
【００１４】
【発明の効果】
以上のように本発明のクリーニング方法によれば、特に装置内温度が高温であっても装置内を確実に搬送できると共に、装置内に付着している異物を簡便かつ確実に除去でき、さらにクリーニング後の基板の再利用上の問題もない。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method for cleaning various apparatuses, for example, a cleaning method for a substrate processing apparatus that dislikes foreign matters, such as a manufacturing apparatus and an inspection apparatus for semiconductors, flat panel displays, and printed boards.
[0002]
[Prior art]
Various substrate processing apparatuses transport each transport system and the substrate in physical contact with each other. At this time, if foreign substances adhere to the substrate or the transport system, subsequent substrates are contaminated one after another, and it is necessary to periodically stop the apparatus and perform a cleaning process. For this reason, there existed a problem that an operation rate fall and a lot of labor were needed. In order to solve these problems, there has been proposed a method of cleaning and removing adhered foreign substances in the substrate processing apparatus by transporting a substrate to which an adhesive substance is fixed (for example, Japanese Patent Laid-Open No. 10-154686).
[0003]
[Problems to be solved by the invention]
The method of cleaning and removing the adhered foreign matter in the substrate processing apparatus by transporting the substrate to which the adhesive substance is fixed is an effective method for overcoming the above-described problems. However, in this method, since the adhesive material is used as the cleaning layer, the adhesive material and the apparatus contact portion may be strongly bonded to each other and may not be peeled off, and the substrate may not be reliably conveyed.
Furthermore, since the adhesive usually has a glass transition temperature of less than 150 ° C., the apparatus requires 150 ° C. or more, such as an ozone asher, resist coater, oxidation diffusion furnace, atmospheric pressure CVD (Chemical Vapor Deposition) apparatus, low pressure CVD apparatus, plasma CVD. In an apparatus etc., there existed a problem that it was inferior to heat resistance and could not be used.
In addition, in the case of a method in which a substrate with a pressure-sensitive adhesive layer fixed as a cleaning layer is transported into the apparatus and cleaned, the substrate must be collected after cleaning, and the cost of separating the used cleaning layer is separated. There was also a problem that it took time and effort.
In light of such circumstances, the present invention can be reliably transported into an apparatus having a substrate processing apparatus having a temperature of 150 ° C. or more, and can easily and reliably remove foreign substances adhering to the apparatus. Another object of the present invention is to provide a cleaning method that does not have a problem in reuse of a substrate after cleaning.
[0004]
[Means for Solving the Problems]
As a result of intensive studies to achieve the above-mentioned object, the present inventors have transported a cleaning material made of a heat-resistant resin material into the apparatus to be cleaned to remove the adhered foreign matter in the apparatus. It has been found that by bringing it into contact, foreign matters can be peeled off and removed easily and reliably without causing the above-mentioned problems, and the present invention has been completed.
[0005]
That is, the present invention provides a substrate processing apparatus cleaning method in which an aromatic polymer selected from polyquinoxaline, polybenzoylene benzimidazole, polyphenylene, polyamide, polyimide, polybenzimidazole, and polycarbodiimide is applied and dried. A cleaning method for a substrate processing apparatus, characterized in that a cleaning material made of a heat-resistant resin material having a glass transition temperature of 200 ° C. or higher is transported into the apparatus and brought into contact with a portion to be cleaned (claim). 1) A cleaning method for a substrate processing apparatus, wherein the cleaning material is in the form of a sheet (Claim 2), and a cleaning method for a substrate processing apparatus, wherein the cleaning material is in the shape of a conveying member ( According to Claim 3).
[0006]
DETAILED DESCRIPTION OF THE INVENTION
The cleaning material used in the cleaning method of the present invention is made of a heat-resistant resin material, that is, a heat-resistant polymer resin. Such heat-resistant resin, since it is necessary to withstand transport under high temperature, its glass transition temperature (hereinafter, Tg may be referred to) is 0.99 ° C. or more, and particularly preferably 200 ° C. or higher. If Tg is less than 150 ° C., it may be adsorbed with a stage or the like during conveyance into a heated apparatus and may not be conveyed.
The heat-resistant resin is not particularly limited as long as it has the above-mentioned heat resistance, for example , ladder polymers such as polyquinoxaline and polybenzoylene benzimidazole, and aromatics such as polyphenylene, polyamide, polyimide, polybenzimidazole, and polycarbodiimide. Examples thereof include polymers.
In particular, carbodiimide is suitable as a cleaning material used in the present invention in that it does not generate volatile gas or decomposition monomer even when exposed to a high temperature of 400 ° C. or higher. Among these, the following formula (1) described in Japanese Patent Application No. 10-305201
[Chemical 1]
Further, the thickness of the cleaning material is not particularly limited, but can be appropriately selected from about 100 to 1000 μm in general. If the thickness is too small, the rigidity of the cleaning material may be low and difficult to convey. On the other hand, if the thickness is too large, there is a possibility that confirmation with the aligner cannot be performed when the inside of the apparatus is conveyed.
[0007]
Moreover, you may add various additives, such as a smoothing agent, a leveling agent, and a defoaming agent for giving surface smoothness, in the range which does not impair the heat resistance to the said cleaning material as needed. In addition, various inorganic powders made of, for example, ceramics such as alumina, silica, magnesia, silicon nitride, and other carbons may be used as necessary in order to impart conductivity and adjust the elastic modulus, particularly increase the elastic modulus. You may mix | blend 1 type (s) or 2 or more types.
[0008]
The shape of the cleaning material is not particularly limited, and may be a sheet shape, a shape of a transport member such as a processing substrate transported into the apparatus, or the like. Such a transport member is not particularly limited, and examples thereof include semiconductor wafers, glass substrates, substrates for flat panel displays such as LCDs and PDPs, and other substrates such as compact disks and MR heads.
[0009]
The manufacturing method of the cleaning material used in the present invention is not particularly limited. For example, a heat-resistant resin varnish is formed on a silicon substrate and the like using a known method (casting, spin coating, roll coating, etc.) to an appropriate thickness. It is obtained by coating and drying at a temperature necessary for removing the solvent. For example, the drying temperature is 20 to 350 ° C, preferably 50 to 250 ° C, and most preferably 70 to 200 ° C. If the drying temperature is lower than 20 ° C., the solvent may remain in the resin, resulting in poor cleaning performance. When the drying temperature is higher than 350 ° C., the heat-resistant resin material may be thermally cured, which may cause the resin to shrink or deteriorate.
[0010]
In the present invention, the heat-resistant cleaning material itself can be transported into the apparatus and brought into contact with the site to be cleaned for cleaning.
[0011]
【Example】
Hereinafter, although the present invention is explained based on an example, the present invention is not limited to these. Hereinafter, “parts” means parts by weight.
Example 1
To a 500 ml four-necked flask equipped with a stirrer, dropping funnel, reflux condenser, 1,4-bis (4-aminophenylisopropylidene) benzene (17 g, 49.35 mmol), triethylamine (9.99 g, 98.98). 70 mmol) and 146.24 g of tetrahydrofuran were charged. The flask was cooled in an ice bath, and phenyl chloroformate (15.45 g, 98.70 mmol) was placed in the dropping funnel and added dropwise over 1 minute. Thereafter, the mixture was stirred at room temperature for 120 minutes.
After confirming the formation of carbamate by IR, trimethylchlorosilane (10.72 g, 98.70 mmol), triethylamine (9.99 g, 98.70 mmol), carbodiimidization catalyst (3-methyl-1-phenyl-2-phospholene-1 -Oxide) (472.2 mg, 2.47 mmol) was charged, and the mixture was stirred at 60 ° C. for 1 hour and then at 67 ° C. for 7 hours to carry out isocyanate and polymerization.
Carbodiimidization (structure of Formula 1) was confirmed by IR spectrum, and the generated triethylamine hydrochloride was removed by filtration to obtain a varnish.
The varnish was cast on a glass plate and dried at 90 ° C. for 30 minutes and further at 250 ° C. for 30 minutes to obtain a flexible film. When the thermal characteristics of the obtained film were evaluated, the glass transition temperature was 220.8 ° C.
[0012]
The varnish was applied onto an 8-inch silicon wafer by spin coating, and dried at 90 × 30 min, then at 250 ° C. × 30 min, to produce an 8-inch heat-resistant resin material having a thickness of 400 μm. Thereafter, the heat-resistant resin material was peeled from the silicon wafer to obtain an 8-inch size cleaning material.
When the cleaning material thus obtained was cleaned and transported in an ozone asher where the temperature inside the apparatus was heated to 200 ° C., the cleaning material could be transported without any problem, and 0.2 μm or more in an 8-inch wafer before transport. As a result, the number of foreign matters that had been 24,000 decreased to 6000 after the conveyance, and the cleaning effect could be confirmed.
[0013]
Comparative Example 1
5 g (28.7 mmol) of 2,4-tolylene diisocyanate / 2,6-tolylene diisocyanate mixture (mixing ratio 90:10) was mixed with 20 g of tetrahydrofuran in a carbodiimidization catalyst (3-methyl-1-phenyl-2-phospholene). -1-oxide) 43 mg (0.22 mmol) and stirred at 60 ° C. for 15 hours to obtain a polycarbodiimide solution.
The polymer solution was cast on a glass plate and dried at 90 ° C. for 30 minutes to produce a film. When the thermal characteristics of the obtained film were evaluated, Tg was 53 ° C.
As in Example 1, the varnish was applied onto an 8-inch silicon wafer by spin coating and dried at 90 × 30 min to produce an 8-inch sized heat-resistant resin material having a thickness of 400 μm. The heat-resistant resin material was peeled from the silicon wafer to obtain an 8-inch size cleaning material.
When the obtained cleaning material was transported in an ozone asher heated at 200 ° C. in the same manner as in Example 1, it adhered to the wafer stage and could not be transported.
[0014]
【The invention's effect】
As described above, according to the cleaning method of the present invention, the inside of the apparatus can be reliably transported even when the temperature inside the apparatus is high, and foreign substances adhering to the inside of the apparatus can be easily and reliably removed, and further cleaning can be performed. There is no problem in reusing the substrate later.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000129498A JP4009407B2 (en) | 2000-04-28 | 2000-04-28 | Cleaning method for substrate processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000129498A JP4009407B2 (en) | 2000-04-28 | 2000-04-28 | Cleaning method for substrate processing apparatus |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007067880A Division JP2007203296A (en) | 2007-03-16 | 2007-03-16 | Method for cleaning substrate treatment apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001300436A JP2001300436A (en) | 2001-10-30 |
| JP4009407B2 true JP4009407B2 (en) | 2007-11-14 |
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| JP2000129498A Expired - Fee Related JP4009407B2 (en) | 2000-04-28 | 2000-04-28 | Cleaning method for substrate processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2004048008A1 (en) * | 2002-11-25 | 2004-06-10 | Nitto Denko Corporation | Cleaning sheet and method for cleaning substrate processing apparatus |
| WO2019211354A1 (en) * | 2018-05-04 | 2019-11-07 | Basf Se | Process for extending the service life of a reactor comprising a distillation device |
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