JP2001300436A - Method for cleaning substrate treatment apparatus - Google Patents
Method for cleaning substrate treatment apparatusInfo
- Publication number
- JP2001300436A JP2001300436A JP2000129498A JP2000129498A JP2001300436A JP 2001300436 A JP2001300436 A JP 2001300436A JP 2000129498 A JP2000129498 A JP 2000129498A JP 2000129498 A JP2000129498 A JP 2000129498A JP 2001300436 A JP2001300436 A JP 2001300436A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- resistant resin
- heat
- substrate
- cleaning material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 29
- 238000004140 cleaning Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000011538 cleaning material Substances 0.000 claims abstract description 24
- 229920006015 heat resistant resin Polymers 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 12
- 230000009477 glass transition Effects 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000007689 inspection Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 description 8
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000002966 varnish Substances 0.000 description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 150000001718 carbodiimides Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- -1 polyphenylene Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- BNPJZQPPXJLGJR-UHFFFAOYSA-N 2,3-dihydro-1lambda5-phosphole 1-oxide Chemical compound O=P1CCC=C1 BNPJZQPPXJLGJR-UHFFFAOYSA-N 0.000 description 1
- ZUZGODUFPWDRMR-UHFFFAOYSA-N 4-[2-[4-[1-(4-aminophenyl)propan-2-ylidene]cyclohexa-2,5-dien-1-ylidene]propyl]aniline Chemical compound C1=CC(=C(C)CC=2C=CC(N)=CC=2)C=CC1=C(C)CC1=CC=C(N)C=C1 ZUZGODUFPWDRMR-UHFFFAOYSA-N 0.000 description 1
- YMKWWHFRGALXLE-UHFFFAOYSA-N 4-methyl-1-phenyl-2,3-dihydro-1$l^{5}-phosphole 1-oxide Chemical compound C1CC(C)=CP1(=O)C1=CC=CC=C1 YMKWWHFRGALXLE-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-M Carbamate Chemical compound NC([O-])=O KXDHJXZQYSOELW-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004693 Polybenzimidazole Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- AHWALFGBDFAJAI-UHFFFAOYSA-N phenyl carbonochloridate Chemical compound ClC(=O)OC1=CC=CC=C1 AHWALFGBDFAJAI-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920003255 poly(phenylsilsesquioxane) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- ILWRPSCZWQJDMK-UHFFFAOYSA-N triethylazanium;chloride Chemical compound Cl.CCN(CC)CC ILWRPSCZWQJDMK-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、各種装置をクリー
ニングする方法に関し、例えば、半導体、フラットパネ
ルディスプレイ、プリント基板などの製造装置や検査装
置など、異物を嫌う基板処理装置などのクリーニング方
法に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a method for cleaning various apparatuses, and more particularly to a method for cleaning a substrate processing apparatus which does not like foreign substances, such as a manufacturing apparatus for semiconductors, flat panel displays and printed circuit boards, and an inspection apparatus.
【０００２】[0002]
【従来の技術】各種基板処理装置は、各搬送系と基板と
を物理的に接触させながら搬送する。その際、基板や搬
送系に異物が付着していると、後続の基板を次々に汚染
することになり、定期的に装置を停止させ、洗浄処理を
する必要があった。このため、稼働率低下や多大な労力
が必要になるという問題があった。これらの問題を解決
するため、粘着性の物質を固着した基板を搬送すること
により基板処理装置内の付着した異物をクリーニング除
去する方法が提案されている（例えば特開平１０−１５
４６８６号）。2. Description of the Related Art Various substrate processing apparatuses transport substrates while physically contacting each transport system with a substrate. At that time, if foreign matter is attached to the substrate or the transport system, the subsequent substrate is contaminated one after another, and it is necessary to periodically stop the apparatus and perform a cleaning process. For this reason, there has been a problem that the operation rate is reduced and a large amount of labor is required. In order to solve these problems, there has been proposed a method of cleaning and removing adhered foreign matter in a substrate processing apparatus by transporting a substrate to which an adhesive substance is adhered (for example, Japanese Patent Application Laid-Open No. H10-15).
No. 4686).
【０００３】[0003]
【発明が解決しようとする課題】粘着性の物質を固着し
た基板を搬送することにより基板処理装置内の付着した
異物をクリーニング除去する方法は、前述の課題を克服
する有効な方法である。しかしこの方法ではクリーニン
グ層として粘着剤物質を用いているため、粘着性物質と
装置接触部とが強く接着しすぎて剥れない恐れがあり、
基板を確実に搬送できなくなる恐れがあった。さらに、
通常粘着剤はガラス転移温度が１５０℃未満であるた
め、１５０℃以上かかる装置、例えばオゾンアッシャ
ー、レジストコーター、酸化拡散炉、常圧ＣＶＤ（Chem
ical Vapor Deposition）装置、減圧ＣＶＤ装置、プラ
ズマＣＶＤ装置などにおいては、耐熱性に劣り使用でき
ない場合があるという問題があった。また、基板にクリ
ーニング層として粘着剤層を固着したものを装置内に搬
送してクリーニングする方法の場合、クリーニング後、
基板を回収しなけらばならず、使用済のクリーニング層
を剥離分別するコストと手間がかかるという問題もあっ
た。本発明は、このような事情に照らし、特に基板処理
装置内の温度が１５０℃以上ある装置内にも確実に搬送
できると共に、該装置内に付着している異物を簡便かつ
確実に除去できる上、さらにクリーニング後の基板の再
利用上の問題もないクリーニング方法を提供することを
目的としている。The method of cleaning and removing the adhered foreign matter in the substrate processing apparatus by transporting the substrate to which the adhesive substance is fixed is an effective method for overcoming the above-mentioned problem. However, in this method, since the pressure-sensitive adhesive substance is used as the cleaning layer, there is a possibility that the pressure-sensitive adhesive substance and the device contact portion are too strongly adhered and cannot be separated,
There was a risk that the substrate could not be transported reliably. further,
Usually, the pressure-sensitive adhesive has a glass transition temperature of less than 150 ° C., and therefore requires a temperature of 150 ° C. or more, such as an ozone asher, a resist coater, an oxidation diffusion furnace, and a normal pressure CVD (Chem.
However, there has been a problem that heat-resistant materials may not be used in some cases, such as a thermal vapor deposition (CVD) apparatus, a low-pressure CVD apparatus, and a plasma CVD apparatus. Further, in the case of a method in which a substrate having an adhesive layer fixed thereon as a cleaning layer is transported into the apparatus for cleaning, after cleaning,
There is also a problem that the substrate has to be collected, and the cost and labor for peeling and separating the used cleaning layer are high. In view of such circumstances, the present invention can reliably transport a substrate processing apparatus even in an apparatus having a temperature of 150 ° C. or higher, and can easily and reliably remove foreign matters adhering in the apparatus. It is another object of the present invention to provide a cleaning method that does not have a problem in reusing a substrate after cleaning.
【０００４】[0004]
【課題を解決するための手段】本発明者らは、上記の目
的を達成するために鋭意検討した結果、装置内の付着し
た異物をクリーニング除去するにあたり、耐熱性樹脂材
からなるクリーニング材を装置内に搬送して被洗浄部位
に接触させることにより、前記問題を生じることなく、
さらに異物を簡便かつ確実に剥離除去できることを見出
し、本発明を完成するに至つた。Means for Solving the Problems As a result of extensive studies to achieve the above object, the present inventors have found that a cleaning material made of a heat-resistant resin material is used for cleaning foreign substances adhered in the apparatus. By transporting inside and contacting the site to be cleaned, without causing the above problem,
Furthermore, they have found that foreign substances can be easily and reliably peeled and removed, and have completed the present invention.
【０００５】即ち、本発明は、基板処理装置のクリーニ
ング方法において、耐熱性樹脂材からなるクリーニング
材を装置内に搬送して被洗浄部位に接触させることを特
徴とする基板処理装置のクリーニング方法（請求項
１）、耐熱性樹脂材のガラス転移温度が１５０℃以上で
ある基板処理装置のクリーニング方法（請求項２）など
に係るものである。That is, the present invention provides a method of cleaning a substrate processing apparatus, which comprises transporting a cleaning material made of a heat-resistant resin material into the apparatus and bringing the cleaning material into contact with a portion to be cleaned. The present invention relates to a method for cleaning a substrate processing apparatus wherein the glass transition temperature of the heat-resistant resin material is 150 ° C. or more (claim 2).
【０００６】[0006]
【発明の実施の形態】本発明のクリーニング方法に用い
るクリーニング材は、耐熱性樹脂材、即ち耐熱性のある
高分子樹脂からなる。 かかる耐熱性樹脂は、高温化で
の搬送に耐えうることが必要であることから、そのガラ
ス転移温度（以下、Ｔｇということがある）が１５０℃
以上、特に２００℃以上であることが好ましい。 Ｔｇ
が１５０℃未満であると、加温した装置内への搬送時に
ステージなどと吸着し搬送できないおそれがある。該耐
熱性樹脂は、上記の耐熱性を有する限り特に限定されな
いが、例えば、フェニル−Ｔ、ポリキノキサリン、ポリ
ベンゾイレンベンズイミダゾールなどのラダーポリマー
や、ポリフェニレン、ポリアミド、ポリイミド、ポリベ
ンズイミダゾール、ポリカルボジイミドなどの芳香族ポ
リマーなどが挙げられる。特に、カルボジイミドは、４
００℃以上の高温にさらしても揮発性ガスや分解モノマ
ーを生成しないという点で、本発明で用いるクリーニン
グ材として好適である。 その中でも特に特願平１０−
３０５２０１号記載の下式（１）DESCRIPTION OF THE PREFERRED EMBODIMENTS The cleaning material used in the cleaning method of the present invention is made of a heat-resistant resin material, that is, a heat-resistant polymer resin. Since such a heat-resistant resin is required to be able to withstand transportation at a high temperature, its glass transition temperature (hereinafter, sometimes referred to as Tg) is 150 ° C.
The temperature is preferably 200 ° C. or higher. Tg
If it is lower than 150 ° C., it may be adsorbed on a stage or the like during transfer to a heated apparatus and cannot be transferred. The heat-resistant resin is not particularly limited as long as it has the above-mentioned heat resistance, for example, ladder polymers such as phenyl-T, polyquinoxaline, polybenzilenbenzimidazole, and polyphenylene, polyamide, polyimide, polybenzimidazole, polycarbodiimide. And the like. In particular, carbodiimide has a 4
It is suitable as a cleaning material used in the present invention because it does not generate volatile gas or decomposed monomers even when exposed to a high temperature of 00 ° C. or more. Among them, Japanese Patent Application No. 10-
The lower formula (1) described in No. 305201
【化１】 で表される構成単位を有するポリカルボジイミドが、高
い耐熱性（Ｔｇが２００℃以上）を有し、また接着性、
低温加工性及び耐湿性にも優れている点から、特に本発
明のクリーニング材として、より好適である。 但し、
本発明は何ら本構造を有するカルボジイミド樹脂に限定
されるものではない。またクリーニング材の厚さは特に
限定されないが、一般に１００〜１０００μｍ程度で適
宜選択することができる。 厚さが小さすぎるとクリー
ニング材の剛直性が低くなり搬送しにくくなる場合があ
り、逆に大きすぎると装置内を搬送する際にアライナー
での確認ができない恐れがある。Embedded image The polycarbodiimide having a structural unit represented by the formula (1) has high heat resistance (Tg is 200 ° C or higher),
Since they are excellent in low-temperature processability and moisture resistance, they are particularly suitable as the cleaning material of the present invention. However,
The present invention is not limited to a carbodiimide resin having this structure at all. In addition, the thickness of the cleaning material is not particularly limited, but generally can be appropriately selected from about 100 to 1000 μm. If the thickness is too small, the rigidity of the cleaning material may be reduced and the conveyance may be difficult, and if the thickness is too large, it may not be possible to confirm with an aligner when the cleaning material is conveyed in the apparatus.
【０００７】また、上記クリーニング材には、その耐熱
性を損なわない範囲で、表面平滑性を出すための平滑
剤、レベリング剤、脱泡剤などの各種添加剤を必要に応
じて添加してもよい。 また、導電性の付与や弾性率の
調整、特に高弾性率化などを図るために、例えばアルミ
ナ、シリカ、マグネシア、窒化ケイ素などのセラミッ
ク、その他カーボンなどからなる種々の無機粉末を必要
に応じて１種又は２種以上配合してもよい。Further, various additives such as a smoothing agent for improving the surface smoothness, a leveling agent, a defoaming agent and the like may be added to the cleaning material as needed as long as the heat resistance is not impaired. Good. Also, in order to impart conductivity and adjust the elastic modulus, particularly to achieve a high elastic modulus, for example, alumina, silica, magnesia, ceramics such as silicon nitride, and various inorganic powders such as carbon and the like as necessary. One or more kinds may be blended.
【０００８】またクリーニング材の形状は特に限定され
ず、シート状、装置内に搬送される処理基板などの搬送
部材の形状などとすることができる。 かかる搬送部材
としては、特に限定されないが、半導体ウエハ、ガラス
基板、ＬＣＤ、ＰＤＰなどのフラットパネルディスプレ
イ用基板、その他コンパクトディスク、ＭＲヘッドなど
の基板などが挙げられる。The shape of the cleaning material is not particularly limited, and may be in the form of a sheet, a conveying member such as a processing substrate conveyed into the apparatus, or the like. Such a transport member is not particularly limited, and examples thereof include a semiconductor wafer, a glass substrate, a flat panel display substrate such as an LCD and a PDP, and a substrate such as a compact disk and an MR head.
【０００９】本発明で用いるクリーニング材の製法は、
特に限定されないが、例えば、耐熱性樹脂ワニスをシリ
コン基板上などに、公知の方法（キャスティング、スピ
ンコーティング、ロールコーティングなど）を用いて、
適当な厚さに塗工し、溶媒の除去に必要な温度で乾燥す
ることで得られる。 例えば、乾燥温度は２０〜３５０
℃、好ましくは５０〜２５０℃、最も好ましくは７０〜
２００℃である。 乾燥温度が２０℃より低いと、樹脂
中に溶剤が残存し、クリーニング性能が乏しくなる場合
がある。 乾燥温度が３５０℃より高いと、耐熱性樹脂
材の熱硬化が進む場合があり、樹脂の収縮や劣化が生じ
る場合があり好ましくない。The manufacturing method of the cleaning material used in the present invention is as follows.
Although not particularly limited, for example, a heat-resistant resin varnish is formed on a silicon substrate or the like by using a known method (casting, spin coating, roll coating, or the like).
It is obtained by coating to an appropriate thickness and drying at a temperature necessary for removing the solvent. For example, the drying temperature is 20-350.
C., preferably 50-250.degree. C., most preferably 70-250.degree.
200 ° C. If the drying temperature is lower than 20 ° C., the solvent may remain in the resin and the cleaning performance may be poor. If the drying temperature is higher than 350 ° C., the heat curing of the heat-resistant resin material may proceed, and the resin may shrink or deteriorate, which is not preferable.
【００１０】本発明においては、上記耐熱性を有するク
リーニング材自体を装置内に搬送して、被洗浄部位に接
触させてクリーニングすることができる。In the present invention, the cleaning material having heat resistance can be conveyed into the apparatus and cleaned by contacting the cleaning target.
【００１１】[0011]
【実施例】以下、本発明を実施例に基づいて説明する
が、本発明はこれらに限定されるものではない。 な
お、以下、部とあるのは重量部を意味するものとする。 実施例１ 攪拌装置、滴下漏斗、還流冷却器を取付けた５００ｍｌ
の四つ口フラスコに、１、４−ビス（４−アミノフェニ
ルイソプロピリデン）ベンゼン（１７ｇ、４９．３５ｍ
ｍｏｌ）、トリエチルアミン（９．９９ｇ、９８．７０
ｍｍｏｌ）、テトラヒドロフラン１４６．２４ｇを仕込
んだ。 フラスコを氷浴で冷却し、滴下漏斗にフェニル
クロロホルメート（１５．４５ｇ、９８．７０ｍｍｏ
ｌ）を入れ、１分かけて滴下した。 その後室温で１２
０分間攪拌した。カーバメートの生成をＩＲで確認した
後、トリメチルクロロシラン（１０．７２ｇ、９８．７
０ｍｍｏｌ）、トリエチルアミン（９．９９ｇ、９８．
７０ｍｍｏｌ）、カルボジイミド化触媒（３−メチル−
１−フェニル−２−ホスホレン−１−オキシド）（４７
２．２ｍｇ、２．４７ｍｍｏｌ）を仕込み、６０℃で１
時間、続いて６７℃で７時間攪拌してイソシアネート化
及び重合を行った。ＩＲスペクトルによりカルボジイミ
ド化（式１の構造）を確認し、生成したトリエチルアミ
ン塩酸塩を濾過により除去し、ワニスを得た。上記ワニ
スをガラス板上にキャスティングし、９０℃にて３０分
間、さらに２５０℃で３０分間乾燥してかとう性を有す
るフィルムを得た。 得られたフィルムの熱的特性を評
価したところ、ガラス転移温度は、２２０．８℃であっ
た。EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples. Hereinafter, “parts” means “parts by weight”. Example 1 500 ml equipped with a stirrer, a dropping funnel and a reflux condenser
1,4-bis (4-aminophenylisopropylidene) benzene (17 g, 49.35 m)
mol), triethylamine (9.99 g, 98.70)
mmol) and 146.24 g of tetrahydrofuran. The flask was cooled in an ice bath and phenyl chloroformate (15.45 g, 98.70 mmol) was added to the dropping funnel.
l) was added and added dropwise over 1 minute. Then at room temperature 12
Stirred for 0 minutes. After confirming the formation of carbamate by IR, trimethylchlorosilane (10.72 g, 98.7)
0 mmol), triethylamine (9.99 g, 98.
70 mmol), a carbodiimidation catalyst (3-methyl-
1-phenyl-2-phospholene-1-oxide) (47
2.2 mg, 2.47 mmol).
After stirring at 67 ° C. for 7 hours, isocyanation and polymerization were carried out. The carbodiimidization (structure of formula 1) was confirmed by IR spectrum, and the generated triethylamine hydrochloride was removed by filtration to obtain a varnish. The varnish was cast on a glass plate and dried at 90 ° C. for 30 minutes and further at 250 ° C. for 30 minutes to obtain a film having flexibility. When the thermal properties of the obtained film were evaluated, the glass transition temperature was 220.8 ° C.
【００１２】上記ワニスを、８インチシリコンウエハ上
にスピンコートにより塗工し、９０×３０ｍｉｎ、次い
で２５０℃×３０ｍｉｎで乾燥して、厚みが４００μｍ
である８インチサイズの耐熱性樹脂材を作製した。 こ
の後、この耐熱性樹脂材をシリコンウエハより剥離し、
８インチサイズのクリーニング材とした。得られたクリ
ーニング材を、装置内の温度が２００℃に加温されてい
るオゾンアッシャー内をクリーニング搬送させたとこ
ろ、クリーニング材は問題なく搬送でき、搬送前に８イ
ンチウエハ内で０．２μｍ以上で２４０００個あった異
物が、搬送後に６０００個まで減少しており、クリーニ
ング効果が確認できた。The above varnish is applied on an 8-inch silicon wafer by spin coating, dried at 90 × 30 min, and then at 250 ° C. × 30 min to have a thickness of 400 μm.
8 inch heat resistant resin material was manufactured. Thereafter, the heat-resistant resin material is peeled from the silicon wafer,
An 8-inch cleaning material was used. When the obtained cleaning material was cleaned and transported in an ozone asher heated to a temperature of 200 ° C. in the apparatus, the cleaning material could be transported without any problem. Before transporting, the cleaning material was 0.2 μm or more in an 8-inch wafer. The number of foreign substances that had decreased from 24,000 to 6000 after transport was confirmed, and the cleaning effect was confirmed.
【００１３】比較例１ ２、４−トリレンジイソシアネート／２、６−トリレン
ジイソシアネート混合物（混合割合９０：１０）５ｇ
（２８．７ｍｍｏｌ）を、テトラヒドロフラン２０ｇ中
でカルボジイミド化触媒（３−メチル−１−フェニル−
２−ホスホレン−１−オキシド）４３ｍｇ（０．２２ｍ
ｍｏｌ）とともに６０℃で１５時間攪拌し、ポリカルボ
ジイミド溶液を得た。該ポリマー溶液をガラス板上にキ
ャスティングし、９０℃で３０分間乾燥してフィルムを
作製した。 得られたフィルムの熱的特性を評価したと
ころ、Ｔｇは５３℃であった。上記ワニスを実施例１と
同様、８インチシリコンウエハ上にスピンコートにより
塗工し、９０×３０ｍｉｎで乾燥して、厚みが４００μ
ｍである８インチサイズの耐熱性樹脂材を作製し、この
後、耐熱性樹脂材をシリコンウエハより剥離し、８イン
チサイズのクリーニング材とした。得られたクリーニン
グ材を、実施例１と同様に、装置内の温度が２００℃に
加温されているオゾンアッシャー内を搬送させたとこ
ろ、ウエハステージに固着し、搬送できなくなった。Comparative Example 1 5 g of a mixture of 2,4-tolylene diisocyanate / 2,6-tolylene diisocyanate (mixing ratio 90:10)
(28.7 mmol) in 20 g of tetrahydrofuran with the carbodiimidation catalyst (3-methyl-1-phenyl-).
43 mg of 2-phospholene-1-oxide) (0.22 m
mol.) at 60 ° C. for 15 hours to obtain a polycarbodiimide solution. The polymer solution was cast on a glass plate and dried at 90 ° C. for 30 minutes to produce a film. When the thermal characteristics of the obtained film were evaluated, Tg was 53 ° C. The varnish was applied on an 8-inch silicon wafer by spin coating in the same manner as in Example 1, dried at 90 × 30 min, and had a thickness of 400 μm.
Then, a heat-resistant resin material having a size of 8 inches was prepared, and then the heat-resistant resin material was peeled off from the silicon wafer to obtain a cleaning material having a size of 8 inches. When the obtained cleaning material was conveyed in an ozone asher heated to 200 ° C. in the apparatus in the same manner as in Example 1, it was fixed on the wafer stage and could not be conveyed.
【００１４】[0014]
【発明の効果】以上のように本発明のクリーニング方法
によれば、特に装置内温度が高温であっても装置内を確
実に搬送できると共に、装置内に付着している異物を簡
便かつ確実に除去でき、さらにクリーニング後の基板の
再利用上の問題もない。As described above, according to the cleaning method of the present invention, it is possible to reliably transport the inside of the apparatus even if the temperature inside the apparatus is high, and to easily and surely remove foreign matter adhering to the inside of the apparatus. It can be removed and there is no problem in reusing the substrate after cleaning.
Claims (4)
て、耐熱性樹脂材からなるクリーニング材を装置内に搬
送して被洗浄部位に接触させることを特徴とする基板処
理装置のクリーニング方法。1. A method for cleaning a substrate processing apparatus, comprising: transporting a cleaning material made of a heat-resistant resin material into the apparatus and bringing the cleaning material into contact with a portion to be cleaned.
℃以上であることを特徴とする請求項１記載の基板処理
装置のクリーニング方法。2. The heat-resistant resin material has a glass transition temperature of 150.
2. The method for cleaning a substrate processing apparatus according to claim 1, wherein the temperature is not lower than C.
を特徴とする請求項１又は２記載の基板処理装置のクリ
ーニング方法。3. The method for cleaning a substrate processing apparatus according to claim 1, wherein the cleaning material is in a sheet form.
ることを特徴とする請求項１又は２記載の基板処理装置
のクリーニング方法。4. The method according to claim 1, wherein the cleaning material has a shape of a transport member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000129498A JP4009407B2 (en) | 2000-04-28 | 2000-04-28 | Cleaning method for substrate processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000129498A JP4009407B2 (en) | 2000-04-28 | 2000-04-28 | Cleaning method for substrate processing apparatus |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007067880A Division JP2007203296A (en) | 2007-03-16 | 2007-03-16 | Method for cleaning substrate treatment apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001300436A true JP2001300436A (en) | 2001-10-30 |
| JP4009407B2 JP4009407B2 (en) | 2007-11-14 |
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ID=18638767
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000129498A Expired - Fee Related JP4009407B2 (en) | 2000-04-28 | 2000-04-28 | Cleaning method for substrate processing apparatus |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004048008A1 (en) * | 2002-11-25 | 2004-06-10 | Nitto Denko Corporation | Cleaning sheet and method for cleaning substrate processing apparatus |
| CN112055722A (en) * | 2018-05-04 | 2020-12-08 | 巴斯夫欧洲公司 | Method for extending the service life of a reactor comprising a distillation apparatus |
-
2000
- 2000-04-28 JP JP2000129498A patent/JP4009407B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004048008A1 (en) * | 2002-11-25 | 2004-06-10 | Nitto Denko Corporation | Cleaning sheet and method for cleaning substrate processing apparatus |
| US7846258B2 (en) | 2002-11-25 | 2010-12-07 | Nitto Denko Corporation | Cleaning sheet and method of cleaning substrate processing equipment |
| CN112055722A (en) * | 2018-05-04 | 2020-12-08 | 巴斯夫欧洲公司 | Method for extending the service life of a reactor comprising a distillation apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4009407B2 (en) | 2007-11-14 |
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