JP4009034B2 - バリア膜製造方法 - Google Patents

バリア膜製造方法 Download PDF

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Publication number
JP4009034B2
JP4009034B2 JP03804199A JP3804199A JP4009034B2 JP 4009034 B2 JP4009034 B2 JP 4009034B2 JP 03804199 A JP03804199 A JP 03804199A JP 3804199 A JP3804199 A JP 3804199A JP 4009034 B2 JP4009034 B2 JP 4009034B2
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JP
Japan
Prior art keywords
gas
thin film
reducing gas
nitrogen
refractory metal
Prior art date
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Expired - Fee Related
Application number
JP03804199A
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English (en)
Japanese (ja)
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JP2000235963A5 (enExample
JP2000235963A (ja
Inventor
雅通 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP03804199A priority Critical patent/JP4009034B2/ja
Priority to KR1020000006214A priority patent/KR100773280B1/ko
Priority to EP00103073A priority patent/EP1029943B1/en
Priority to TW089102530A priority patent/TW451357B/zh
Priority to DE60019660T priority patent/DE60019660T2/de
Priority to US09/504,923 priority patent/US6743718B1/en
Publication of JP2000235963A publication Critical patent/JP2000235963A/ja
Priority to US10/133,432 priority patent/US20020123215A1/en
Publication of JP2000235963A5 publication Critical patent/JP2000235963A5/ja
Application granted granted Critical
Publication of JP4009034B2 publication Critical patent/JP4009034B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP03804199A 1999-02-17 1999-02-17 バリア膜製造方法 Expired - Fee Related JP4009034B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP03804199A JP4009034B2 (ja) 1999-02-17 1999-02-17 バリア膜製造方法
KR1020000006214A KR100773280B1 (ko) 1999-02-17 2000-02-10 배리어막제조방법및배리어막
TW089102530A TW451357B (en) 1999-02-17 2000-02-15 Manufacturing method of barrier film and the barrier film
DE60019660T DE60019660T2 (de) 1999-02-17 2000-02-15 Verfahren zum Aufbringen einer Sperrschicht
EP00103073A EP1029943B1 (en) 1999-02-17 2000-02-15 Process for producing barrier film
US09/504,923 US6743718B1 (en) 1999-02-17 2000-02-16 Process for producing barrier film and barrier film thus produced
US10/133,432 US20020123215A1 (en) 1999-02-17 2002-04-29 Process for producing barrier film and barrier film thus produced

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03804199A JP4009034B2 (ja) 1999-02-17 1999-02-17 バリア膜製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007163880A Division JP2007251211A (ja) 2007-06-21 2007-06-21 バリア膜製造方法、及びバリア膜

Publications (3)

Publication Number Publication Date
JP2000235963A JP2000235963A (ja) 2000-08-29
JP2000235963A5 JP2000235963A5 (enExample) 2005-11-04
JP4009034B2 true JP4009034B2 (ja) 2007-11-14

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP03804199A Expired - Fee Related JP4009034B2 (ja) 1999-02-17 1999-02-17 バリア膜製造方法

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JP (1) JP4009034B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156024A (ja) * 1999-09-13 2001-06-08 Tokyo Electron Ltd ＴｉＮ系薄膜およびその成膜方法、成膜装置、ＴｉＮ系薄膜を含む膜構造体およびその製造方法、ならびに半導体装置
JP4674061B2 (ja) * 2004-07-14 2011-04-20 株式会社アルバック 薄膜形成方法
US10504741B2 (en) * 2017-02-28 2019-12-10 Tokyo Electron Limited Semiconductor manufacturing method and plasma processing apparatus

Also Published As

Publication number Publication date
JP2000235963A (ja) 2000-08-29

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