JP4009034B2 - バリア膜製造方法 - Google Patents
バリア膜製造方法 Download PDFInfo
- Publication number
- JP4009034B2 JP4009034B2 JP03804199A JP3804199A JP4009034B2 JP 4009034 B2 JP4009034 B2 JP 4009034B2 JP 03804199 A JP03804199 A JP 03804199A JP 3804199 A JP3804199 A JP 3804199A JP 4009034 B2 JP4009034 B2 JP 4009034B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- thin film
- reducing gas
- nitrogen
- refractory metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000004888 barrier function Effects 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000007789 gas Substances 0.000 claims description 107
- 239000010409 thin film Substances 0.000 claims description 57
- 230000001603 reducing effect Effects 0.000 claims description 49
- 239000010408 film Substances 0.000 claims description 46
- 150000004767 nitrides Chemical class 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 33
- 239000003870 refractory metal Substances 0.000 claims description 32
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 8
- 238000010790 dilution Methods 0.000 claims description 3
- 239000012895 dilution Substances 0.000 claims description 3
- 238000005121 nitriding Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000010937 tungsten Substances 0.000 description 31
- 229910052721 tungsten Inorganic materials 0.000 description 31
- -1 tungsten nitride Chemical class 0.000 description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Images
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- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03804199A JP4009034B2 (ja) | 1999-02-17 | 1999-02-17 | バリア膜製造方法 |
| KR1020000006214A KR100773280B1 (ko) | 1999-02-17 | 2000-02-10 | 배리어막제조방법및배리어막 |
| DE60019660T DE60019660T2 (de) | 1999-02-17 | 2000-02-15 | Verfahren zum Aufbringen einer Sperrschicht |
| EP00103073A EP1029943B1 (en) | 1999-02-17 | 2000-02-15 | Process for producing barrier film |
| TW089102530A TW451357B (en) | 1999-02-17 | 2000-02-15 | Manufacturing method of barrier film and the barrier film |
| US09/504,923 US6743718B1 (en) | 1999-02-17 | 2000-02-16 | Process for producing barrier film and barrier film thus produced |
| US10/133,432 US20020123215A1 (en) | 1999-02-17 | 2002-04-29 | Process for producing barrier film and barrier film thus produced |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03804199A JP4009034B2 (ja) | 1999-02-17 | 1999-02-17 | バリア膜製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007163880A Division JP2007251211A (ja) | 2007-06-21 | 2007-06-21 | バリア膜製造方法、及びバリア膜 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000235963A JP2000235963A (ja) | 2000-08-29 |
| JP2000235963A5 JP2000235963A5 (enrdf_load_stackoverflow) | 2005-11-04 |
| JP4009034B2 true JP4009034B2 (ja) | 2007-11-14 |
Family
ID=12514462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03804199A Expired - Fee Related JP4009034B2 (ja) | 1999-02-17 | 1999-02-17 | バリア膜製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4009034B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001156024A (ja) * | 1999-09-13 | 2001-06-08 | Tokyo Electron Ltd | ＴｉＮ系薄膜およびその成膜方法、成膜装置、ＴｉＮ系薄膜を含む膜構造体およびその製造方法、ならびに半導体装置 |
| JP4674061B2 (ja) * | 2004-07-14 | 2011-04-20 | 株式会社アルバック | 薄膜形成方法 |
| US10504741B2 (en) * | 2017-02-28 | 2019-12-10 | Tokyo Electron Limited | Semiconductor manufacturing method and plasma processing apparatus |
-
1999
- 1999-02-17 JP JP03804199A patent/JP4009034B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000235963A (ja) | 2000-08-29 |
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