JP3994513B2 - Sputtering equipment - Google Patents

Sputtering equipment Download PDF

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Publication number
JP3994513B2
JP3994513B2 JP09427998A JP9427998A JP3994513B2 JP 3994513 B2 JP3994513 B2 JP 3994513B2 JP 09427998 A JP09427998 A JP 09427998A JP 9427998 A JP9427998 A JP 9427998A JP 3994513 B2 JP3994513 B2 JP 3994513B2
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Japan
Prior art keywords
shutter
sample
target
sputtering
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP09427998A
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Japanese (ja)
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JPH11293456A (en
Inventor
謙 船戸
茂雄 林
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Priority to JP09427998A priority Critical patent/JP3994513B2/en
Publication of JPH11293456A publication Critical patent/JPH11293456A/en
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Description

【0001】
【発明の属する技術分野】
本発明はスパッタ装置、特にシャッタの構造に関するものである。
【0002】
【従来の技術】
従来、薄膜形成装置としてスパッタ装置が広く用いられている。このスパッタ装置は、スパッタ室内にターゲットと試料(基板)とを対向して配置し、両者の間に高電圧を印加することによりターゲットから粒子をたたき出し、試料表面に薄膜を形成するものである。
【0003】
ところで、ターゲットの取り替え初期や、スパッタ装置にターゲットを取り付けた状態での保管後、ターゲット表面に酸化層などの汚染層が形成されていることがある。このままで本スパッタを開始すると、ターゲット材料とともに汚染層もスパッタされ、試料に形成される膜は不純物を含んだものとなる。
【0004】
そこで、ターゲット表面の汚染層を取り除くためにプリスパッタが行なわれる。このプリスパッタ時の粒子が試料に付着するのを防止するため、図1に示すように、ターゲット1と試料2との間を遮蔽するシャッタ3を開閉可能に設け、シャッタ3を閉鎖した状態でプリスパッタを行い、プリスパッタ終了後にシャッタ3を開いて本スパッタを行なうようにしたスパッタ装置が知られている。上記シャッタ3は、ターゲット1と試料2との対向方向と平行な回転軸4に取り付けられ、この回転軸4を回転させることにより、シャッタ3がターゲット1と試料2との間を出入りするようになっている。
【0005】
【発明が解決しようとする課題】
ところが、上記のように回転軸4をターゲット1と試料2との対向方向と平行に配設すると、シャッタ3を開いた時に、シャッタ3が退避する空間6をスパッタ室5の側部に設ける必要があり、スパッタ室5の容積が大きくなってしまう。スパッタ室5はスパッタ処理のために所定の真空度に減圧されるが、上記のようにスパッタ室5が大きくなると、それだけ減圧工程に時間を要するという欠点がある。また、スパッタ室5が退避空間6のために複雑な形状となるため、製造コストが高くなるという欠点もある。
【0006】
そこで、本発明の目的は、シャッタとスパッタ室との干渉を防止しながら、スパッタ室を小型で単純な形状にできるスパッタ装置を提供することにある。
【0007】
【課題を解決するための手段】
上記目的を達成するため、請求項1に記載の発明は、スパッタ室内にターゲットと試料とを対向配置し、その間を遮蔽するシャッタを開閉可能に設けたスパッタ装置において、上記シャッタは、ターゲットと試料との対向方向に対して直交方向に延びる回転軸を中心として回転可能に配置されており、上記シャッタは、開位置において試料の側部へ退避するよう、その回転軸が試料より反ターゲット側に位置していることを特徴とするスパッタ装置を提供する。
【0008】
本発明のスパッタ装置では、シャッタがターゲットと試料との対向方向に対して直交方向に延びる回転軸を中心として回転するので、シャッタを開いた時、シャッタは試料またはターゲットの側部へ回転することになる。そのため、スパッタ室の側部にシャッタの退避空間を設ける必要がなく、スパッタ室の容積を従来に比べて小さくできるとともに、スパッタ室の形状を単純化できる。また、シャッタの開位置において試料の側部へ退避するよう、シャッタの回転軸を試料より反ターゲット側に配置することで、試料の背後にある空間を有効利用できるので、スパッタ室を一層小型化できる。
【0009】
請求項2のように、シャッタをそれぞれ別の回転軸に支持された複数のシャッタ部材で構成した場合には、1枚のシャッタで構成した場合に比べてシャッタを閉じた時の遮蔽面積が大きく、逆に開いた時の退避空間が小さくて済むので、スペース効率が良好となるという利点がある。
【0011】
さらに、請求項3のように、シャッタを試料を取り囲む半球殻状に形成した場合には、シャッタの遮蔽効果が高く、プリスパッタ時の粒子が試料に付着しにくいだけでなく、シャッタがスパッタ室の内壁や試料ホルダなどと干渉しにくい。
【0012】
【発明の実施の形態】
図2〜図5は本発明にかかるスパッタ装置の一例を示す。
10は箱型のチャンバーであり、その内部にはスパッタ室11が形成されている。チャンバー10は直方体または立方体形状、円筒形状などいかなる形状であってもよい。また、この実施例のスパッタ室11は円筒形状であるが、角形であてもよい。チャンバー10の下面側は開口しており、この開口部10aはリング状の絶縁材12を介して板状のターゲット13によって閉じられている。ターゲット13の背面にはバッキングプレート14が配置され、バッキングプレート14とターゲット13とがネジ15によってチャンバー10に締結されている。絶縁材12の材質としては、耐熱性に優れたセラミックや樹脂などが用いられる。なお、この絶縁材12とチャンバー10およびターゲット13との間は、Oリング等のシール材(図示せず)でシールされている。
【0013】
ターゲット13と対向するスパッタ室11の天井部には試料ホルダ16が設けられ、この試料ホルダ16の下面には基板などの試料17が着脱可能に保持される。試料ホルダ16は、スパッタ室11の天井部から下方へ垂設するシャフト部16aと、シャフト部16aの下端に固定された試料17を保持するための保持部16bとを有している。
【0014】
スパッタ室11内は図示しない減圧ポンプによって排気され、例えば10-4〜10-3Pa程度の真空度に保たれている。そして、スパッタ室11内にはアルゴンガスなどの不活性ガスが導入され、例えば0.5〜2Pa程度の圧力に設定されている。試料ホルダ16とバッキングプレート14との間には、陰極側をバッキングプレート14側に向けて高圧電源18が接続されている。なお、チャンバー10自体はアースに接続されている。電源18をONすると、周知のように、陰極であるターゲット13にプラズマ中のイオンが衝突し、ターゲット13の原子がたたき出され、このスパッタ原子が試料17に付着して膜を形成する。
【0015】
スパッタ室11には、ターゲット13と試料17との間を遮蔽するシャッタ20が開閉可能に設けられている。このシャッタ20は、左右一対のシャッタ部材21,22で構成されている。各シャッタ部材21,22は、チャンバー1の側壁1bに回転可能に取り付けられた回転軸21a,22aを備えており、回転軸21a,22aの内側端部には半径方向に延びるアーム部21b,22bを介して遮蔽部21c,22cがネジ23等によって固定されている(図4参照)。回転軸21a,22aの外周にはOリング24が装着され、チャンバー1の側壁1bとの間をシールしている。この実施例の遮蔽部21c,22cは半円筒状に形成されており、その曲率中心に回転軸21a,22aが配置されている。
【0016】
上記回転軸21a,22aは、ターゲット13と試料17との中心部を結ぶ対向軸方向に対して直交方向、すなわち図2の例では水平方向に延びている。この実施例では、回転軸21a,22aは試料17より上方(反ターゲット側)に位置している。そのため、図5のようにシャッタ20を開いた時、遮蔽部21c,22cが試料ホルダ16の背後に回り込み、試料ホルダ16の背後のデットスペースをシャッタ20の退避空間として有効利用できる。
【0017】
上記実施例では、シャッタを閉じた時(図2参照)、遮蔽部21c,22cの端面が当たるようにしたが、遮蔽部21c,22cに歪みや傾きがあると、端面が正確に密着せず、隙間が生じることがある。隙間があると、プリスパッタ時の粒子が試料17に付着する可能性がある。そこで、図6のように、一方の遮蔽部22cが他方の遮蔽部21cの外側に重なるように構成すれば、シャッタを閉じた時に隙間が発生せず、良好な遮蔽効果を発揮できる。
【0018】
上記実施例では、シャッタ部材21,22に略半円筒状の遮蔽部21c,22cを設けたが、この場合には遮蔽部21c,22cの軸方向両端がスパッタ室11の内壁に近づき、最悪の場合には干渉することがある(図3参照)。その場合、遮蔽部21c,22cの軸方向両端を切除してもよいが、遮蔽効果が低下する可能性がある。
【0019】
そこで、図7のように遮蔽部21c,22cを半球殻状としてもよい。この場合には、遮蔽部21c,22cがスパッタ室11の内壁や試料ホルダ16に干渉する恐れが少なく、シャッタの閉鎖時に遮蔽部21c,22cが試料17の全周を均等に取り囲むことができるので、遮蔽効果が高く、プリスパッタ時の粒子が試料17に付着しにくいという効果がある。特に、半球殻状の遮蔽部21c,22cは、スパッタ室11が円筒形で、試料ホルダ16が円形の場合に有効である。
【0020】
本発明は上記実施例に限定されるものではない。
図2の実施例では、ターゲット13自体がチャンバー10の開口部10aを閉じるようにしたが、図1のように開口部10aより小型のターゲットを用いてもよいことは勿論である。したがって、ターゲット13とチャンバー10との取付方法も、ターゲット13およびバッキングプレート14を重ね合わせてチャンバー10に対して締結する方法に限らない。
上記実施例ではシャッタを2個1組で構成したが、1個のシャッタのみで構成してもよいことは勿論である。また、シャッタの遮蔽部は円筒形状や球殻形状に限らず、平板状であってもよい。遮蔽部の形状は、試料ホルダやスパッタ室の形状に応じて任意に選択できるものである。
上記実施例では、シャッタが開位置において試料の側部へ退避するよう、その回転軸を試料より反ターゲット側に配置したが、シャッタが開位置においてターゲットの側部へ退避するよう、その回転軸をターゲットの背後に配置してもよい。この場合には、ターゲットの側部に退避空間を設ける必要がある。
【0021】
【発明の効果】
以上の説明で明らかなように、本発明のスパッタ装置によれば、シャッタがターゲットと試料との対向方向に対して直交方向に延びる回転軸を中心として回転するので、シャッタを開いた時、シャッタは試料またはターゲットの側部へ退避し、スパッタ室の側部にシャッタの退避空間を設ける必要がない。そのため、スパッタ室の容積を従来に比べて小さくでき、減圧工程を短縮できるとともに、スパッタ室の形状を単純化できるので、チャンバーを安価に製造できるという効果がある。
【図面の簡単な説明】
【図1】従来例のスパッタ装置の概略断面図である。
【図2】本発明にかかるスパッタ装置の第1実施例の縦断面図である。
【図3】図2に示されたスパッタ装置の横断面図である。
【図4】シャッタの取付部の拡大図である。
【図5】図2に示されたスパッタ装置のシャッタ開放時の概略断面図である。
【図6】本発明にかかるスパッタ装置の第2実施例の概略断面図である。
【図7】シャッタの他の例の斜視図である。
【符号の説明】
10 チャンバー
11 スパッタ室
13 ターゲット
16 試料ホルダ
17 試料
20 シャッタ
21,22 シャッタ部材
21a,22a 回転軸
21c,22c 遮蔽部
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a sputtering apparatus, and more particularly to a shutter structure.
[0002]
[Prior art]
Conventionally, sputtering apparatuses have been widely used as thin film forming apparatuses. In this sputtering apparatus, a target and a sample (substrate) are disposed facing each other in a sputtering chamber, and a high voltage is applied between them to knock out particles from the target and form a thin film on the surface of the sample.
[0003]
By the way, a contamination layer such as an oxide layer may be formed on the surface of the target after initial replacement of the target or after storage with the target attached to the sputtering apparatus. When the main sputtering is started in this state, the contamination layer is sputtered together with the target material, and the film formed on the sample contains impurities.
[0004]
Therefore, pre-sputtering is performed to remove the contamination layer on the target surface. In order to prevent the particles during the pre-sputtering from adhering to the sample, as shown in FIG. 1, a shutter 3 that shields between the target 1 and the sample 2 is provided so as to be openable and closable, and the shutter 3 is closed. There is known a sputtering apparatus that performs pre-sputtering and opens the shutter 3 after pre-sputtering to perform main sputtering. The shutter 3 is attached to a rotating shaft 4 parallel to the facing direction of the target 1 and the sample 2, and the shutter 3 is moved between the target 1 and the sample 2 by rotating the rotating shaft 4. It has become.
[0005]
[Problems to be solved by the invention]
However, when the rotating shaft 4 is disposed in parallel with the facing direction of the target 1 and the sample 2 as described above, a space 6 for retracting the shutter 3 when the shutter 3 is opened needs to be provided in the side portion of the sputtering chamber 5. As a result, the volume of the sputtering chamber 5 becomes large. The sputter chamber 5 is depressurized to a predetermined degree of vacuum for the sputter process. However, as the sputter chamber 5 becomes large as described above, there is a disadvantage that the depressurization process requires much time. Further, since the sputter chamber 5 has a complicated shape due to the retreat space 6, there is also a drawback that the manufacturing cost is increased.
[0006]
Accordingly, an object of the present invention is to provide a sputtering apparatus capable of making the sputtering chamber small and simple while preventing interference between the shutter and the sputtering chamber.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, a first aspect of the present invention is a sputtering apparatus in which a target and a sample are arranged opposite to each other in a sputtering chamber and a shutter that shields between the target and the sample can be opened and closed. The shutter is arranged so as to be rotatable about a rotation axis extending in a direction orthogonal to the opposite direction to the direction opposite to the sample. Provided is a sputtering apparatus characterized by being positioned .
[0008]
In the sputtering apparatus of the present invention, the shutter rotates about a rotation axis extending in a direction orthogonal to the facing direction of the target and the sample. Therefore, when the shutter is opened, the shutter rotates to the side of the sample or the target. become. Therefore, it is not necessary to provide a retracting space for the shutter in the side portion of the sputtering chamber, the volume of the sputtering chamber can be reduced as compared with the conventional case, and the shape of the sputtering chamber can be simplified. In addition, the space behind the sample can be used effectively by placing the shutter rotation shaft on the side opposite to the sample so that it retracts to the side of the sample when the shutter is open. it can.
[0009]
When the shutter is constituted by a plurality of shutter members each supported by a separate rotating shaft, the shielding area when the shutter is closed is larger than when the shutter is constituted by a single shutter. On the contrary, since the retreat space when opened is small, there is an advantage that the space efficiency is improved.
[0011]
Further, when the shutter is formed in a hemispherical shell shape surrounding the sample as in claim 3 , the shutter has a high shielding effect, and not only the particles during pre-sputtering are difficult to adhere to the sample, but also the shutter has a sputtering chamber. It is hard to interfere with the inner wall of the instrument and the sample holder.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
2 to 5 show an example of a sputtering apparatus according to the present invention.
Reference numeral 10 denotes a box-shaped chamber in which a sputtering chamber 11 is formed. The chamber 10 may have any shape such as a rectangular parallelepiped, a cube, or a cylinder. Further, the sputtering chamber 11 of this embodiment is cylindrical, but may be rectangular. The lower surface side of the chamber 10 is open, and the opening 10 a is closed by a plate-like target 13 via a ring-shaped insulating material 12. A backing plate 14 is disposed on the back surface of the target 13, and the backing plate 14 and the target 13 are fastened to the chamber 10 by screws 15. As the material of the insulating material 12, ceramic or resin having excellent heat resistance is used. The insulating material 12 and the chamber 10 and the target 13 are sealed with a sealing material (not shown) such as an O-ring.
[0013]
A sample holder 16 is provided on the ceiling of the sputtering chamber 11 facing the target 13, and a sample 17 such as a substrate is detachably held on the lower surface of the sample holder 16. The sample holder 16 has a shaft portion 16a that hangs downward from the ceiling portion of the sputtering chamber 11, and a holding portion 16b that holds the sample 17 fixed to the lower end of the shaft portion 16a.
[0014]
The inside of the sputtering chamber 11 is evacuated by a decompression pump (not shown), and is maintained at a degree of vacuum of about 10 −4 to 10 −3 Pa, for example. Then, an inert gas such as argon gas is introduced into the sputtering chamber 11 and is set to a pressure of about 0.5 to 2 Pa, for example. A high voltage power source 18 is connected between the sample holder 16 and the backing plate 14 with the cathode side facing the backing plate 14 side. The chamber 10 itself is connected to ground. When the power source 18 is turned on, as is well known, ions in the plasma collide with the target 13 which is a cathode, the atoms of the target 13 are knocked out, and the sputtered atoms adhere to the sample 17 to form a film.
[0015]
In the sputtering chamber 11, a shutter 20 that shields between the target 13 and the sample 17 is provided to be openable and closable. The shutter 20 includes a pair of left and right shutter members 21 and 22. Each of the shutter members 21 and 22 includes rotary shafts 21a and 22a that are rotatably attached to the side wall 1b of the chamber 1, and arm portions 21b and 22b that extend in the radial direction at the inner ends of the rotary shafts 21a and 22a. The shielding portions 21c and 22c are fixed by screws 23 or the like (see FIG. 4). An O-ring 24 is attached to the outer periphery of the rotary shafts 21a and 22a, and seals between the chamber 1 and the side wall 1b. The shielding portions 21c and 22c of this embodiment are formed in a semi-cylindrical shape, and rotating shafts 21a and 22a are arranged at the centers of curvature.
[0016]
The rotating shafts 21a and 22a extend in a direction orthogonal to the opposing axial direction connecting the center portions of the target 13 and the sample 17, that is, in the horizontal direction in the example of FIG. In this embodiment, the rotating shafts 21a and 22a are located above the sample 17 (on the opposite target side). Therefore, when the shutter 20 is opened as shown in FIG. 5, the shielding portions 21 c and 22 c wrap around the sample holder 16, and the dead space behind the sample holder 16 can be effectively used as a retracting space for the shutter 20.
[0017]
In the above embodiment, when the shutter is closed (see FIG. 2), the end surfaces of the shielding portions 21c and 22c are made to contact each other. However, if the shielding portions 21c and 22c are distorted or inclined, the end surfaces are not accurately adhered. , Gaps may occur. If there is a gap, particles during pre-sputtering may adhere to the sample 17. Therefore, as shown in FIG. 6, if one shield 22c is configured to overlap the other shield 21c, a gap is not generated when the shutter is closed, and a good shielding effect can be exhibited.
[0018]
In the above embodiment, the shutter members 21 and 22 are provided with the semi-cylindrical shielding portions 21c and 22c, but in this case, both ends in the axial direction of the shielding portions 21c and 22c approach the inner wall of the sputter chamber 11, which is the worst. In some cases, interference may occur (see FIG. 3). In that case, both ends in the axial direction of the shielding portions 21c and 22c may be cut off, but the shielding effect may be reduced.
[0019]
Therefore, the shielding portions 21c and 22c may be hemispherical as shown in FIG. In this case, the shielding portions 21c and 22c are less likely to interfere with the inner wall of the sputtering chamber 11 and the sample holder 16, and the shielding portions 21c and 22c can uniformly surround the entire circumference of the sample 17 when the shutter is closed. The shielding effect is high, and there is an effect that particles at the time of pre-sputtering hardly adhere to the sample 17. In particular, the hemispherical shielding portions 21c and 22c are effective when the sputtering chamber 11 is cylindrical and the sample holder 16 is circular.
[0020]
The present invention is not limited to the above embodiments.
In the embodiment shown in FIG. 2, the target 13 itself closes the opening 10a of the chamber 10, but it goes without saying that a target smaller than the opening 10a may be used as shown in FIG. Therefore, the method for attaching the target 13 and the chamber 10 is not limited to the method in which the target 13 and the backing plate 14 are overlapped and fastened to the chamber 10.
In the above embodiment, two shutters are configured as one set, but it is needless to say that the shutters may be configured with only one shutter. Moreover, the shielding part of the shutter is not limited to a cylindrical shape or a spherical shell shape, and may be a flat plate shape. The shape of the shielding part can be arbitrarily selected according to the shape of the sample holder or the sputtering chamber.
In the above embodiment, the rotation shaft is disposed on the side opposite to the target so that the shutter is retracted to the side of the sample in the open position, but the rotation shaft is disposed so that the shutter is retracted to the side of the target in the open position. May be placed behind the target. In this case, it is necessary to provide a retreat space on the side of the target.
[0021]
【The invention's effect】
As is apparent from the above description, according to the sputtering apparatus of the present invention, the shutter rotates around the rotation axis extending in the direction orthogonal to the facing direction of the target and the sample. Is retracted to the side of the sample or target, and there is no need to provide a retracting space for the shutter on the side of the sputtering chamber. Therefore, the volume of the sputtering chamber can be reduced as compared with the conventional case, the pressure reduction process can be shortened, and the shape of the sputtering chamber can be simplified, so that the chamber can be manufactured at low cost.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view of a conventional sputtering apparatus.
FIG. 2 is a longitudinal sectional view of a first embodiment of a sputtering apparatus according to the present invention.
3 is a cross-sectional view of the sputtering apparatus shown in FIG.
FIG. 4 is an enlarged view of a shutter mounting portion.
FIG. 5 is a schematic cross-sectional view of the sputtering apparatus shown in FIG. 2 when the shutter is opened.
FIG. 6 is a schematic cross-sectional view of a second embodiment of the sputtering apparatus according to the present invention.
FIG. 7 is a perspective view of another example of the shutter.
[Explanation of symbols]
10 Chamber 11 Sputtering chamber 13 Target 16 Sample holder 17 Sample 20 Shutters 21 and 22 Shutter members 21a and 22a Rotating shafts 21c and 22c Shielding portion

Claims (3)

スパッタ室内にターゲットと試料とを対向配置し、その間を遮蔽するシャッタを開閉可能に設けたスパッタ装置において、
上記シャッタは、ターゲットと試料との対向方向に対して直交方向に延びる回転軸を中心として回転可能に配置されており、
上記シャッタは、開位置において試料の側部へ退避するよう、その回転軸が試料より反ターゲット側に位置していることを特徴とするスパッタ装置。
In a sputtering apparatus in which a target and a sample are arranged opposite to each other in a sputtering chamber, and a shutter that shields between the opening and closing is provided,
The shutter is disposed so as to be rotatable about a rotation axis extending in a direction orthogonal to the facing direction of the target and the sample ,
The sputtering apparatus according to claim 1, wherein a rotation axis of the shutter is positioned on the side opposite to the target so as to retract to the side of the sample in the open position .
上記シャッタは、それぞれ別の回転軸に支持された複数のシャッタ部材で構成されていることを特徴とする請求項1に記載のスパッタ装置。The sputtering apparatus according to claim 1, wherein the shutter includes a plurality of shutter members supported by different rotating shafts. 上記シャッタは、試料を取り囲む半球殻状に形成されていることを特徴とする請求項1又は2に記載のスパッタ装置。The shutter is sputtering apparatus according to claim 1 or 2, characterized in that it is formed in a hemispherical surrounding the sample.
JP09427998A 1998-04-07 1998-04-07 Sputtering equipment Expired - Fee Related JP3994513B2 (en)

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JP09427998A JP3994513B2 (en) 1998-04-07 1998-04-07 Sputtering equipment

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Application Number Priority Date Filing Date Title
JP09427998A JP3994513B2 (en) 1998-04-07 1998-04-07 Sputtering equipment

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JP3994513B2 true JP3994513B2 (en) 2007-10-24

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Publication number Priority date Publication date Assignee Title
JP4855360B2 (en) * 2007-09-13 2012-01-18 株式会社アルバック Film forming apparatus and film forming method
JP5584409B2 (en) * 2008-02-21 2014-09-03 キヤノンアネルバ株式会社 Sputtering apparatus and control method thereof
JP5563377B2 (en) * 2009-12-22 2014-07-30 キヤノンアネルバ株式会社 Sputtering equipment
DE102016124336B4 (en) * 2016-12-14 2022-09-22 VON ARDENNE Asset GmbH & Co. KG Process and device for coating substrates
CN109536900B (en) * 2018-12-20 2021-02-05 兰州空间技术物理研究所 Cathode protection device for extensible and retractable vacuum coating machine
CN112899626A (en) * 2019-11-19 2021-06-04 杭州朗旭新材料科技有限公司 Planar magnetron sputtering cathode target surface protection shielding device

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