JP3976835B2 - 電子ビーム露光方法及び電子ビーム露光装置 - Google Patents

電子ビーム露光方法及び電子ビーム露光装置 Download PDF

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Publication number
JP3976835B2
JP3976835B2 JP11808997A JP11808997A JP3976835B2 JP 3976835 B2 JP3976835 B2 JP 3976835B2 JP 11808997 A JP11808997 A JP 11808997A JP 11808997 A JP11808997 A JP 11808997A JP 3976835 B2 JP3976835 B2 JP 3976835B2
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electron beam
electron
optical system
substrate
beam group
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Japanese (ja)
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JPH10308341A5 (cg-RX-API-DMAC7.html
JPH10308341A (ja
Inventor
真人 村木
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Canon Inc
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Canon Inc
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Priority to JP11808997A priority Critical patent/JP3976835B2/ja
Priority to US09/069,748 priority patent/US6274877B1/en
Publication of JPH10308341A publication Critical patent/JPH10308341A/ja
Publication of JPH10308341A5 publication Critical patent/JPH10308341A5/ja
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JP11808997A 1997-05-08 1997-05-08 電子ビーム露光方法及び電子ビーム露光装置 Expired - Fee Related JP3976835B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11808997A JP3976835B2 (ja) 1997-05-08 1997-05-08 電子ビーム露光方法及び電子ビーム露光装置
US09/069,748 US6274877B1 (en) 1997-05-08 1998-04-30 Electron beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11808997A JP3976835B2 (ja) 1997-05-08 1997-05-08 電子ビーム露光方法及び電子ビーム露光装置

Publications (3)

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JPH10308341A JPH10308341A (ja) 1998-11-17
JPH10308341A5 JPH10308341A5 (cg-RX-API-DMAC7.html) 2005-03-10
JP3976835B2 true JP3976835B2 (ja) 2007-09-19

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JP11808997A Expired - Fee Related JP3976835B2 (ja) 1997-05-08 1997-05-08 電子ビーム露光方法及び電子ビーム露光装置

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158156A (ja) * 2000-11-17 2002-05-31 Advantest Corp 電子ビーム露光装置、電子ビーム露光方法、及び半導体素子製造方法
JP4756776B2 (ja) * 2001-05-25 2011-08-24 キヤノン株式会社 荷電粒子線露光装置、荷電粒子線露光方法およびデバイス製造方法
JP6383228B2 (ja) * 2014-09-19 2018-08-29 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのビーム位置測定方法及びマルチ荷電粒子ビーム描画装置
JP6951673B2 (ja) * 2015-06-23 2021-10-20 大日本印刷株式会社 荷電粒子ビーム描画装置およびその制御方法

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JPH10308341A (ja) 1998-11-17

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