JP3956923B2 - Avalanche photodiode bias voltage control circuit - Google Patents

Avalanche photodiode bias voltage control circuit Download PDF

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JP3956923B2
JP3956923B2 JP2003327015A JP2003327015A JP3956923B2 JP 3956923 B2 JP3956923 B2 JP 3956923B2 JP 2003327015 A JP2003327015 A JP 2003327015A JP 2003327015 A JP2003327015 A JP 2003327015A JP 3956923 B2 JP3956923 B2 JP 3956923B2
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signal
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apd
light receiving
bias voltage
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JP2005093834A (en
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守保 市野
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Sumitomo Electric Industries Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode

Description

本発明は、光受信装置の受光素子として用いられるアバランシェフォトダイオードのバイアス電圧制御回路に関する。 The present invention relates to a bias voltage control circuitry of the avalanche photodiode used as the light receiving element of the optical receiver.

アバランシェフォトダイオード（Avalanche Photo Diode：以下、ＡＰＤという）は、高いバイアス電圧下におけるキャリアの雪崩降伏を利用した光ダイオードであって、自己増倍作用を有している。微弱信号光から比較的大きな光電流を取出すことができるＡＰＤの増倍係数をどの程度にするかによって、ＡＰＤの後段に接続される前置増幅器及び受光システムの設計が左右される。なお、増倍係数とは、１個の光子が入射して何個のキャリアを生成するかを表す係数で、自己増倍作用を有しないＰＩＮフォトダイオードのような場合は、通常、１以下である。   An avalanche photodiode (Avalanche Photo Diode: hereinafter referred to as APD) is a photodiode that uses avalanche breakdown of carriers under a high bias voltage and has a self-multiplier action. The design of the preamplifier and the light receiving system connected to the subsequent stage of the APD depends on how much the multiplication factor of the APD that can extract a relatively large photocurrent from the weak signal light is set. The multiplication coefficient is a coefficient indicating how many carriers are generated by incidence of one photon. In the case of a PIN photodiode having no self-multiplication effect, it is usually 1 or less. is there.

信号光に対して高い増倍係数を設定（バイアス電圧を大きくする）すると、それにつれて雑音信号も増大し雑音特性が劣化する。反対に増倍係数を小さくすると、所定の受光感度を得ることができなくなる。対雑音特性については、例えば、特許文献１に、信号対雑音比（ＳＮＲ）が最大となるように、バイアス電圧を制御することが開示されている。この開示技術は、ＡＰＤの出力信号を増幅した後、第１のフィルタで信号成分を抽出し、第２のフィルタで雑音成分を抽出する。抽出された信号成分と雑音成分からＳＮＲを演算し、演算されたＳＮＲが最大となるようなバイアス電圧を、ＡＰＤに印加するというものである。   When a high multiplication factor is set for the signal light (increasing the bias voltage), the noise signal increases accordingly, and the noise characteristics deteriorate. On the other hand, if the multiplication factor is reduced, a predetermined light receiving sensitivity cannot be obtained. Regarding noise-to-noise characteristics, for example, Patent Document 1 discloses that the bias voltage is controlled so that the signal-to-noise ratio (SNR) is maximized. In this disclosed technique, after the output signal of the APD is amplified, a signal component is extracted by a first filter, and a noise component is extracted by a second filter. The SNR is calculated from the extracted signal component and noise component, and a bias voltage that maximizes the calculated SNR is applied to the APD.

また、ＡＰＤの受光強度及び環境温度を基準として、ＡＰＤのバイアス電圧を制御する方法が、例えば、特許文献２に開示されている。この開示技術は、ＡＰＤとは別個にＰＩＮフォトダイオードを用意しておき、このＰＩＮフォトダイオードにより受光された光の強度を基準として、ＡＰＤのバイアス電圧を制御する方法である。なお、同文献２には、環境温度を検出する手段を設け、検出した温度を基準としてＡＰＤのバイアス電圧を制御することも開示している。   Further, for example, Patent Document 2 discloses a method for controlling the bias voltage of the APD with reference to the light receiving intensity of the APD and the environmental temperature. This disclosed technique is a method of preparing a PIN photodiode separately from the APD and controlling the bias voltage of the APD with reference to the intensity of light received by the PIN photodiode. The same document 2 also discloses that a means for detecting the environmental temperature is provided, and the APD bias voltage is controlled based on the detected temperature.

特開平９−３２１７１０号公報JP-A-9-321710 特開２０００−２４４４１８号公報JP 2000-244418 A

上述した特許文献１、２には、受光信号状態や環境温度の変化に応じてバイアス電圧を調整制御すること、すなわち、光電流の増倍係数を制御することが開示されている。他方、受光パワーが変化した場合や環境温度が変化した場合でも、増倍係数を一定に保持したい要求も常にある。しかし、図７の「光電流対逆電圧」に示されるように、バイアス電圧一定の条件下においては、得られる光電流、すなわち増倍係数は一定とはならない。特に、増倍係数が有意な値をもつバイアス電圧３０Ｖ〜６０Ｖでは、光電流値（微弱電流×増倍係数）は温度変化（光電流値は対数表示）に対して大きく変化する。   Patent Documents 1 and 2 described above disclose that the bias voltage is adjusted and controlled in accordance with changes in the received light signal state and the environmental temperature, that is, the multiplication factor of the photocurrent is controlled. On the other hand, there is always a need to keep the multiplication factor constant even when the received light power changes or the environmental temperature changes. However, as shown in “photocurrent vs. reverse voltage” in FIG. 7, the obtained photocurrent, that is, the multiplication factor, is not constant under the condition that the bias voltage is constant. In particular, at a bias voltage of 30 V to 60 V where the multiplication factor has a significant value, the photocurrent value (weak current × multiplication factor) changes greatly with respect to the temperature change (the photocurrent value is logarithmically displayed).

上述の特許文献２において、ＡＰＤと同じ受光信号を受光するＰＩＮフォトダイオードは、ＡＰＤと比べて温度依存性が小さく増倍係数もほぼ１に近い。したがって、このＰＩＮフォトダイオードの受光強度をモニタ光として、ＡＰＤに印加するバイアス電圧を制御することにより、環境温度の影響による増倍係数の変動を小さくすることが可能と考えられる。しかし、ＰＩＮフォトダイオードは、ＡＰＤとは別に用意しなければならず、また、受光条件が同一になるとは限らない。このため、ＰＩＮフォトダイオードが受光するモニタ光の光強度とＡＰＤが受光する光強度は、必ずしも対応関係にあるとは言えず、バイアス電圧の制御が適正に行なわれないことがある。   In the above-mentioned Patent Document 2, the PIN photodiode that receives the same light reception signal as that of the APD has a temperature dependency smaller than that of the APD and has a multiplication factor close to 1. Therefore, it is considered that the fluctuation of the multiplication factor due to the influence of the environmental temperature can be reduced by controlling the bias voltage applied to the APD using the received light intensity of the PIN photodiode as the monitor light. However, the PIN photodiode must be prepared separately from the APD, and the light receiving conditions are not always the same. For this reason, the light intensity of the monitor light received by the PIN photodiode and the light intensity received by the APD are not necessarily in a corresponding relationship, and the bias voltage may not be properly controlled.

本発明は、上述した実情に鑑みてなされたもので、ＡＰＤの他に別個に受光素子を用いることなく温度依存性の少ない信号光のモニタ光を取得し、このモニタ光を基準として、ＡＰＤの増倍係数を一定に保持することができるＡＰＤのバイアス電圧制御回路及び受光方法の提供を課題とする。   The present invention has been made in view of the above-described circumstances. In addition to the APD, the monitor light of the signal light having a small temperature dependency is obtained without using a light receiving element separately, and the APD is based on the monitor light. It is an object of the present invention to provide a bias voltage control circuit and a light receiving method for an APD that can keep a multiplication factor constant.

本発明によるＡＰＤのバイアス電圧制御回路は、バイアス電圧が印加され自己増倍作用を有する第１の受光領域と、バイアス電圧が印加されず自己増倍作用を有しない第２の受光領域をもつＡＰＤで信号光を受光する回路を備える。そして、第１の受光領域で受光した光に基づく第１の信号と、第２の受光領域で受光した光に基づくモニタ信号とを合成した合成信号を出力するトランスインピーダンス回路と、前記の合成信号から第１の信号を抽出しその強度を出力する回路と、前記の合成信号の平均値を出力する回路と、この平均値と第１の信号との強度の差に所定の利得を与え第２の信号を出力する回路を備え、第１の信号の強度と第２の信号とが等しくなるようにバイアス電圧を制御する。 APD bias voltage control circuit of the APD according to the invention, having a first light receiving area having a self-multiplication effect bias voltage is applied, the second light receiving region having no self-multiplication effect bias voltage is not applied A circuit for receiving signal light is provided. Then, a first signal based on light received by the first light receiving region, and a trans-impedance circuit which outputs a second synthesized signal obtained by synthesizing the monitor signal based on the light received by the light receiving region, the combined signal A circuit for extracting the first signal from the signal and outputting the intensity thereof, a circuit for outputting the average value of the synthesized signal, and giving a predetermined gain to the difference in intensity between the average value and the first signal. The bias voltage is controlled so that the intensity of the first signal is equal to the second signal .

また、第２の受光領域で受光したモニタ信号の強度のみを取出す回路をさらに設け、モニタ信号の強度に応じて、このモニタ信号に与える所定の利得を変える。  Further, a circuit for taking out only the intensity of the monitor signal received in the second light receiving area is further provided, and a predetermined gain given to the monitor signal is changed according to the intensity of the monitor signal.

本発明によるＡＰＤのバイアス電圧制御回路によれば、温度依存性の小さいモニタ信号を基準にＡＰＤの増倍係数を設定することができ、温度変化によらずに増倍係数を一定保持することが可能となる。この結果、ＡＰＤの温度特性と比較して、温度変化による影響がはるかに小さいＡＰＤの後段に接続される主増幅器、或いはシステム全体に対しても温度補償されたこととなり、安定した性能の光受信装置を得ることができる。
また、温度依存性の小さいモニタ信号を、他に光学素子を用いることなく、かつ、ＡＰＤの信号光の一部から得ることができるので、構成が簡単で均一な性能の光受信装置を得ることができる。 According to the APD bias voltage control circuit of the present invention, the APD multiplication factor can be set based on a monitor signal having a small temperature dependency, and the multiplication factor can be kept constant regardless of the temperature change. It becomes possible. As a result, compared to the temperature characteristics of the APD, temperature compensation is performed for the main amplifier connected to the subsequent stage of the APD or the entire system, which is much less affected by the temperature change, and stable optical reception is achieved. A device can be obtained.
Further, since a monitor signal having a small temperature dependency can be obtained from a part of the signal light of the APD without using any other optical element, an optical receiver having a simple configuration and uniform performance can be obtained. Can do.

図により本発明の実施の形態を説明する。図１（Ａ）及び図１（Ｂ）は本発明で用いるＡＰＤの概略を説明する平面図と断面図、図２はＡＰＤの受光領域と光感度特性を示す図、図３はＡＰＤの受光領域における受光性能と周波数特性を示す図である。図中、１はＡＰＤチップ、２はｎ＋基板、３はｎ層、４はｐ＋拡散領域、５、６は絶縁膜、７はｐ側電極、７ａは電極パッド、８はｎ側電極、Ｐｓは第１の受光領域、Ｐｍは第２の受光領域を示す。 Embodiments of the present invention will be described with reference to the drawings. 1A and 1B are a plan view and a cross-sectional view for explaining the outline of the APD used in the present invention, FIG. 2 is a diagram showing a light receiving region and photosensitivity characteristics of the APD, and FIG. 3 is a light receiving region of the APD. It is a figure which shows the light reception performance and frequency characteristic in this. In the figure, 1 is an APD chip, 2 is an n + substrate, 3 is an n layer, 4 is a p + diffusion region, 5 and 6 are insulating films, 7 is a p-side electrode, 7a is an electrode pad, 8 is an n-side electrode, Ps indicates a first light receiving region, and Pm indicates a second light receiving region.

図１（Ａ）に示すように、ＡＰＤチップ１の自己増倍作用を有する第１の受光領域Ｐｓは、例えば、中央部のごく限られた領域のみに設けられる。この中央部の第１の受光領域Ｐｓを囲むようにして形成されたリング状のｐ側電極７から引出された電極パッド７ａと、裏面側のチップ全面に形成されたｎ側電極８との間にバイアス電圧が印加される。このＡＰＤチップ１は、図１（Ｂ）に断面図で示すように、ｎ＋の基板２上にｎ層３を成長させ、ＳｉＯ２等の第１の絶縁膜５による拡散窓を設けた後、この拡散窓を通してｎ層３中にアクセプター原子を拡散させて、拡散させた領域のみにｐ＋拡散領域４を形成する。 As shown in FIG. 1A, the first light receiving region Ps having a self-multiplier action of the APD chip 1 is provided only in a very limited region at the center, for example. A bias is provided between the electrode pad 7a drawn from the ring-shaped p-side electrode 7 formed so as to surround the first light-receiving region Ps in the center and the n-side electrode 8 formed on the entire surface of the chip on the back surface side. A voltage is applied. As shown in the sectional view of FIG. 1B, the APD chip 1 has an n layer 3 grown on an n + substrate 2 and a diffusion window made of a first insulating film 5 such as SiO 2 is provided. The acceptor atoms are diffused into the n layer 3 through this diffusion window, and the p + diffusion region 4 is formed only in the diffused region.

ｐ＋拡散領域４の周辺部に上述したリング状のｐ側電極７を設け、この電極の引出しを第１の絶縁膜５上で行なう。リング状のｐ側電極７で囲まれた領域は、受光する信号光の波長λｓに対して非反射膜となるようにＳｉ３Ｎ４等の第２の絶縁膜６を所定の厚さで形成する。図１（Ｂ）のＡＰＤチップ１の断面構造から明らかなように、ｐ側電極７とｎ側電極８との間にバイアス電圧を印加した場合に、このバイアス電圧が作用するのは受光領域直下のみとなり、受光領域からはずれた部分には電圧が印加されない。 The ring-shaped p-side electrode 7 described above is provided in the periphery of the p + diffusion region 4, and this electrode is drawn out on the first insulating film 5. In a region surrounded by the ring-shaped p-side electrode 7, a second insulating film 6 such as Si 3 N 4 is formed with a predetermined thickness so as to be a non-reflective film with respect to the wavelength λs of the received signal light. To do. As is apparent from the cross-sectional structure of the APD chip 1 in FIG. 1B, when a bias voltage is applied between the p-side electrode 7 and the n-side electrode 8, the bias voltage acts directly under the light receiving region. Thus, no voltage is applied to the portion deviated from the light receiving region.

裏面側に形成されるｎ側電極８は、ほぼＡＰＤチップ１の全面に形成されるので、ｐ側電極７の外側の領域においても、その表面の絶縁膜６を、受光する信号光の波長λｍに対して透明となるように形成する。この結果、ｐ側電極７の外側の領域に入射した光も当然に光電子を生成することとなるが、この領域にはバイアス電圧が印加されず電界が作用していないので、増倍係数は１以下となる。本発明では、バイアス電圧による電界の作用で自己増倍作用を奏するｐ側電極７内の領域を第１の受光領域Ｐｓとし、バイアス電圧による電界が作用せず自己増倍作用を奏しないｐ側電極７の外側で光が入射される領域を第２の受光領域Ｐｍとする。   Since the n-side electrode 8 formed on the back surface side is formed substantially on the entire surface of the APD chip 1, the wavelength λm of the signal light received by the insulating film 6 on the front surface also in the region outside the p-side electrode 7. To be transparent. As a result, light incident on the region outside the p-side electrode 7 naturally generates photoelectrons, but since no bias voltage is applied to this region and no electric field acts, the multiplication factor is 1 It becomes as follows. In the present invention, the region in the p-side electrode 7 that exhibits the self-multiplier action by the action of the electric field by the bias voltage is defined as the first light receiving region Ps, and the p-side that does not act by the bias voltage and does not act by the self-multiplier action. A region where light is incident outside the electrode 7 is defined as a second light receiving region Pm.

図２は、ＡＰＤの感度特性を示す図で、図１（Ａ）に示した４５°の軸線ｂ−ｂを横軸で表し、縦軸に得られる出力光電流値をプロットする。横軸の第１の受光領域の範囲が、図１のｐ側電極７内の領域Ｐｓに対応し、この領域に光が主に入射した場合には大きな光電流値が得られる。この受光領域を外した両側の範囲はｐ側電極７ａの外側である第２の受光領域に対応し、この領域に光が入射した場合は、その光電流値は１／３以下の値にしかならない。また、この第２の領域には電界が作用していないので、その増倍係数の温度依存性も小さい。   FIG. 2 is a diagram showing the sensitivity characteristics of the APD. The axis bb of 45 ° shown in FIG. 1A is represented on the horizontal axis, and the output photocurrent value obtained is plotted on the vertical axis. The range of the first light receiving region on the horizontal axis corresponds to the region Ps in the p-side electrode 7 of FIG. 1, and a large photocurrent value is obtained when light mainly enters this region. The range on both sides excluding the light receiving region corresponds to the second light receiving region outside the p-side electrode 7a. When light enters this region, the photocurrent value is only 1/3 or less. Don't be. In addition, since no electric field acts on the second region, the temperature dependence of the multiplication coefficient is small.

図３は、第１の受光領域と第２の受光領域における受光性能の周波数特性を示す図である。この図から第１の受光領域の周波数特性は、高域（１ＧＨｚ以上の帯域）においても高周波信号に応答可能である。しかし、第２の受光領域の周波数特性は、その光電流の増倍係数が最大でも１であるのに加え、高域での劣化が著しく低域信号（０.５ＧＨｚ以下の帯域）での応答となる。   FIG. 3 is a diagram showing the frequency characteristics of the light receiving performance in the first light receiving region and the second light receiving region. From this figure, the frequency characteristic of the first light receiving region can respond to a high-frequency signal even in a high region (a band of 1 GHz or more). However, the frequency characteristic of the second light receiving region is that the multiplication factor of the photocurrent is 1 at the maximum, and the response in the low frequency signal (band of 0.5 GHz or less) is remarkably deteriorated in the high frequency range. It becomes.

したがって、第１及び第２の受光領域で受光した信号光の成分を、例えば、５００ＭＨｚ程度に遮断周波数を設定した高域通過フィルタを介することにより、第１の受光領域で受光した高域分を含む信号成分と、第２の受光領域で受光した低域分のモニタ成分とを分離して検出できることとなる。これら分離された２つの信号光の成分を適宜処理することで、ＡＰＤの増倍係数を一定にするようにバイアス電圧を設定する構成、入力レベルに応じてバイアス電圧を制御する構成が可能となる。   Therefore, the component of the signal light received in the first and second light receiving regions is passed through a high-pass filter whose cutoff frequency is set to about 500 MHz, for example, so that the high frequency component received in the first light receiving region is reduced. The signal component that is included and the low-frequency monitor component received in the second light receiving region can be separated and detected. By appropriately processing these two separated signal light components, a configuration in which the bias voltage is set so as to make the APD multiplication coefficient constant, and a configuration in which the bias voltage is controlled in accordance with the input level can be realized. .

図４及び図５は、本発明によるＡＰＤの増倍係数を一定に制御する例を説明する図である。図中、１０はＡＰＤ、１１は前置増幅器（ＴＩＡ）、１２はハイパスフィルタ（ＨＰＦ）、１３はロウパスフィルタ（ＬＰＦ）、１４はリミティング増幅器、１５はピークホールド検波器、１６，１７、１８は差動増幅器（Ｕ１，Ｕ２，Ｕ０）、１９はＤＣ／ＤＣコンバータを示す。   4 and 5 are diagrams illustrating an example in which the multiplication factor of the APD according to the present invention is controlled to be constant. In the figure, 10 is an APD, 11 is a preamplifier (TIA), 12 is a high pass filter (HPF), 13 is a low pass filter (LPF), 14 is a limiting amplifier, 15 is a peak hold detector, 16, 17, 18 Is a differential amplifier (U1, U2, U0), and 19 is a DC / DC converter.

ＡＰＤ１０は、図１に示したような、バイアス電圧の印加により自己増倍作用を有する第１の受光領域と、バイアス電圧が印加されず自己増倍作用を有しない第２の受光領域をもつ構成のＡＰＤである。このＡＰＤ１０で受光された信号光には、第１の受光領域で受光した信号光による信号成分Ｉｓと、第２の受光領域で受光した信号光（モニタ光となる）によるモニタ成分Ｉｍと、これに両成分に共通する雑音成分Ｉｎｏが加わって、（Ｉｓ＋Ｉｍ＋Ｉｎｏ）の成分が電気信号に変換されてトランスインピーダンス回路からなる前置増幅器１１（Trans-Impedance Amplifier：ＴＩＡ）に入力される。なお、雑音成分Ｉｎｏには、信号光そのものに含まれているもの、ＡＰＤで電流信号に変換される際に生じるもの、バイアス電圧に依存して増減するもの等、種々の要因による全ての成分を含んでいるものとする。 The APD 10 includes a first light receiving region that has a self-multiplier effect by applying a bias voltage and a second light-receiving region that has no self-multiplier effect when no bias voltage is applied, as shown in FIG. APD. The signal light received by the APD 10 includes a signal component Is based on the signal light received in the first light receiving region, a monitor component Im based on the signal light received in the second light receiving region (which becomes monitor light), and In addition, a noise component Ino common to both components is added, and a component (Is + Im + Ino) is converted into an electric signal and input to a pre-amplifier 11 (Trans-Impedance Amplifier: TIA) including a transimpedance circuit . The noise component Ino includes all components due to various factors such as those included in the signal light itself, those generated when converted into current signals by the APD, and those that increase or decrease depending on the bias voltage. It shall contain.

前置増幅器１１において、これらの成分（Ｉｓ＋Ｉｍ＋Ｉｎｏ）と対応する電流成分は、電流／電圧変換して電圧信号とされる。この後、ＨＰＦ１２とＬＰＦ１３を通され、ＨＰＦ１２を通過する信号は、低域のモニタ信号Ｉｍがカットされた信号Ｉｓと雑音信号Ｉｎｏからなる第１の信号（Ｉｓ＋Ｉｎｏ）となる。他方、ＬＰＦ１３を通過する信号は、信号Ｉｓ及び雑音信号Ｉｎｏに加えて低域のモニタ信号Ｉｍを含む信号（Ｉｍ＋Ｉｓ＋Ｉｎｏ）となる。   In the preamplifier 11, current components corresponding to these components (Is + Im + Ino) are converted into voltage signals by current / voltage conversion. Thereafter, the signal passing through the HPF 12 and the LPF 13 and passing through the HPF 12 is the first signal (Is + Ino) including the signal Is and the noise signal Ino from which the low-frequency monitor signal Im has been cut. On the other hand, the signal passing through the LPF 13 becomes a signal (Im + Is + Ino) including a low-frequency monitor signal Im in addition to the signal Is and the noise signal Ino.

ＨＰＦ１２を通過した第１の信号（Ｉｓ＋Ｉｎｏ）は、リミティング増幅器１４等の出力回路を経て伝送信号とされる。また、このＨＰＦ１２を通過した第１の信号は、整流回路からなるピークホールド検波器１５を介することにより、（Ｉｓ＋Ｉｎｏ）の強度を取出すことができる。他方、ＬＰＦ１３を通過した信号（Ｉｍ＋Ｉｓ＋Ｉｎｏ）は、その遮断周波数（低域遮断周波数）を小さい値に設定することで整流回路を兼ねることになり、ＬＰＦ１３から出力される信号は、（Ｉｍ＋Ｉｓ＋Ｉｎｏ）の強度成分のみとすることができる。この２つの信号は、利得Ｇを可変とする差動増幅器１６（Ｕ１増幅器）に入力される。   The first signal (Is + Ino) that has passed through the HPF 12 is converted into a transmission signal through an output circuit such as the limiting amplifier 14. Further, the intensity of (Is + Ino) can be extracted from the first signal that has passed through the HPF 12 via the peak hold detector 15 formed of a rectifier circuit. On the other hand, the signal (Im + Is + Ino) that has passed through the LPF 13 also serves as a rectifier circuit by setting its cut-off frequency (low cut-off frequency) to a small value, and the signal output from the LPF 13 has an intensity of (Im + Is + Ino). It can be an ingredient only. These two signals are input to a differential amplifier 16 (U1 amplifier) whose gain G is variable.

ＨＰＦ１２を通過した信号は、（Ｉｓ＋Ｉｎｏ）のみであり、ＬＰＦ１３を通過した信号は（Ｉｍ＋Ｉｓ＋Ｉｎｏ）であるので、この差をＵ１増幅器１６で検出することでモニタ信号Ｉｍのみを抽出し、所定の利得Ｇを与えた第２の信号（Ｇ×Ｉｍ）を出力することができる。この利得倍された第２の信号（Ｇ×Ｉｍ）と、ＨＰＦ１２を通過した第１の信号（Ｉｓ＋Ｉｎｏ）との差を、Ｕ２増幅器１７で検出する。そして、利得倍された第２の信号（Ｇ×Ｉｍ）とＨＰＦ１２を通過した第１の信号（Ｉｓ＋Ｉｎｏ）とが等しくなるように、ＡＰＤに加わるバイアス電圧をＤＣ／ＤＣコンバータ１９により制御する。   Since the signal that has passed through the HPF 12 is only (Is + Ino) and the signal that has passed through the LPF 13 is (Im + Is + Ino), only the monitor signal Im is extracted by detecting this difference with the U1 amplifier 16, and a predetermined gain G Can be output as a second signal (G × Im). The U2 amplifier 17 detects the difference between the gain-multiplied second signal (G × Im) and the first signal (Is + Ino) that has passed through the HPF 12. The bias voltage applied to the APD is controlled by the DC / DC converter 19 so that the gain-multiplied second signal (G × Im) is equal to the first signal (Is + Ino) that has passed through the HPF 12.

すなわち、バイアス電圧の印加により自己増倍作用を有する第１の受光領域で受光した光による第１の信号（雑音分を含む）の強度が、バイアス電圧が印加されず自己増倍作用を有しない第２の受光領域で受光した光によるモニタ信号の強度のＧ倍となるよう制御系を実現することができる。そして、モニタ信号には、温度依存性の成分は極めて少ない割合でしか含まれていないため、ＡＰＤの周囲温度が変化したとしても、ＡＰＤの増倍係数は一定に保持することができる。   That is, the intensity of the first signal (including noise) by the light received in the first light receiving region having a self-multiplier effect by applying a bias voltage does not have a self-multiplier effect when no bias voltage is applied. The control system can be realized so as to be G times the intensity of the monitor signal by the light received in the second light receiving region. Since the monitor signal contains only a very small percentage of temperature-dependent components, the APD multiplication factor can be kept constant even if the ambient temperature of the APD changes.

一方、通常のＡＰＤ制御においては、入力レベルが大きくなった場合は、増倍係数を低減して、ＡＰＤから取出される出力電流を抑える制御が行なわれる。しかし、上述した図４の例では、第１の信号（Ｉｓ＋Ｉｎｏ）の強度がモニタ信号ＩｍのＧ倍となるように制御系を設定している。したがって、常に増倍係数が一定となるように設定した場合、入力レベルが大きくなって取出される電流値が増加し、この増加電流によりＡＰＤ自身を破壊するということもある。また、ＡＰＤの電流値が増加した場合、後段に接続される電気回路を飽和状態で動作させることにもなり、正常動作が期待できなくなるという事態が生じる恐れもある。   On the other hand, in normal APD control, when the input level increases, control is performed to reduce the multiplication factor and suppress the output current drawn from the APD. However, in the example of FIG. 4 described above, the control system is set so that the intensity of the first signal (Is + Ino) is G times the monitor signal Im. Therefore, if the multiplication factor is set to be constant at all times, the input level increases and the extracted current value increases, and this increased current may destroy the APD itself. In addition, when the current value of the APD increases, the electric circuit connected to the subsequent stage is also operated in a saturated state, and there is a possibility that a normal operation cannot be expected.

図５の例は、ＡＰＤに入力される信号光の強度が増加した場合には、それに応じてバイアス電圧を低下させ、上述のような事態が生じるのを回避させることを可能とするものである。ＡＰＤ１０は、図４の場合と同様のものが用いられ、第１の受光領域で受光した信号光による信号成分Ｉｓと第２の受光領域で受光した信号光の一部（モニタ光）によるモニタ成分Ｉｍと、これに両成分に共通する雑音成分Ｉｎｏが加わって、（Ｉｓ＋Ｉｍ＋Ｉｎｏ）の成分が電気信号に変換されてＴＩＡ１１に入力される。   In the example of FIG. 5, when the intensity of the signal light input to the APD increases, the bias voltage is decreased accordingly, and the above situation can be avoided. . The APD 10 is the same as that shown in FIG. 4, and the signal component Is generated by the signal light received by the first light receiving region and the monitor component by a part of the signal light (monitor light) received by the second light receiving region. Im and a noise component Ino common to both components are added to this, and the component (Is + Im + Ino) is converted into an electrical signal and input to the TIA 11.

ＨＰＦ１２を通され、整流回路からなるピークホールド検波器１５を経て抽出された第１の信号（Ｉｓ＋Ｉｎｏ）と、ＬＰＦ１３を通された信号（Ｉｍ＋Ｉｓ＋Ｉｎｏ）の強度は、Ｕ０増幅器１８とＵ１増幅器１６の両方に入力される。Ｕ０増幅器１８では、第１の信号（Ｉｓ＋Ｉｎｏ）と信号（Ｉｍ＋Ｉｓ＋Ｉｎｏ）の強度差が検出され、モニタ信号Ｉｍの強度のみを取出す。このモニタ信号Ｉｍは、Ｕ１増幅器１６に制御信号として入力される。   The intensities of the first signal (Is + Ino) passed through the HPF 12 and extracted through the peak hold detector 15 consisting of a rectifier circuit and the signal (Im + Is + Ino) passed through the LPF 13 are both in the U0 amplifier 18 and the U1 amplifier 16. Is input. The U0 amplifier 18 detects an intensity difference between the first signal (Is + Ino) and the signal (Im + Is + Ino), and extracts only the intensity of the monitor signal Im. This monitor signal Im is input to the U1 amplifier 16 as a control signal.

Ｕ１増幅器１６からは、図４の場合と同様に、モニタ信号Ｉｍに所定の利得Ｇを与えた第２の信号（Ｇ×Ｉｍ）を出力させることができる。この利得倍された第２の信号（Ｇ×Ｉｍ）と、ＨＰＦ１２を通過した第１の信号（Ｉｓ＋Ｉｎｏ）との差を、Ｕ２増幅器１７で検出する。そして、利得倍された第２の信号（Ｇ×Ｉｍ）と、ＨＰＦ１２を通過した第１の信号（Ｉｓ＋Ｉｎｏ）とが等しくなるように、ＡＰＤ１０に加わるバイアス電圧をＤＣ／ＤＣコンバータ１９により制御する。 Similarly to the case of FIG. 4, the U1 amplifier 16 can output a second signal (G × Im) obtained by giving a predetermined gain G to the monitor signal Im. The U2 amplifier 17 detects the difference between the gain-multiplied second signal (G × Im) and the first signal (Is + Ino) that has passed through the HPF 12. The bias voltage applied to the APD 10 is controlled by the DC / DC converter 19 so that the gain-multiplied second signal (G × Im) is equal to the first signal (Is + Ino) that has passed through the HPF 12.

ＡＰＤ１０の第１の受光領域で受光される信号光の強度と、第２の受光領域で受光されるモニタ光の強度は、同じ光ビームから得られるとすれば、ビームスポットが移動しない限り、比例関係にある。したがって、信号光の強度が大となればモニタ光の強度も大となる。すなわち、信号Ｉｓの強度が大となればモニタ信号Ｉｍの強度も大となるので、Ｕ０増幅器１８からのモニタ信号Ｉｍの強度が増加したときは、Ｕ１増幅器１６の利得Ｇを低下させ、モニタ信号Ｉｍの強度が低下したときは、Ｕ１増幅器１６の利得Ｇを増加させ、利得倍された第２の信号（Ｇ×Ｉｍ）が一定になるようにする。全体としての閉ループでは、（Ｇ×Ｉｍ）＝（Ｉｓ＋Ｉｎｏ）になるように制御されるので、ＡＰＤの周囲温度が変化しても、ＡＰＤに加わる入力信号強度が変化しても、ＡＰＤの電流を所定値に保持することができる。   If the intensity of the signal light received by the first light receiving area of the APD 10 and the intensity of the monitor light received by the second light receiving area are obtained from the same light beam, they are proportional unless the beam spot moves. There is a relationship. Therefore, the intensity of the monitor light increases as the intensity of the signal light increases. That is, if the intensity of the signal Is increases, the intensity of the monitor signal Im also increases. Therefore, when the intensity of the monitor signal Im from the U0 amplifier 18 increases, the gain G of the U1 amplifier 16 is decreased and the monitor signal Im is increased. When the intensity of Im decreases, the gain G of the U1 amplifier 16 is increased so that the gain-multiplied second signal (G × Im) becomes constant. In the closed loop as a whole, control is performed so that (G × Im) = (Is + Ino). Therefore, even if the ambient temperature of the APD changes or the input signal strength applied to the APD changes, the current of the APD is changed. It can be held at a predetermined value.

図６は、ＡＰＤの受光方法を説明する図で、図６（Ａ）は通常の受光形態を示す図、図６（Ｂ）は本発明の受光方法の一例を説明する図、図６（Ｃ）は本発明の受光方法の他の例を説明する図である。図中、２０はＡＰＤの受光面、２１は集光レンズ、２２はハーフミラー、２３はミラー、Ｐｓは第１の受光領域、Ｐｍは第２の受光領域、Ｓは信号光を示す。   6A and 6B are diagrams for explaining a light receiving method of APD, FIG. 6A is a diagram showing a normal light receiving mode, FIG. 6B is a diagram explaining an example of a light receiving method of the present invention, and FIG. (A) is a figure explaining the other example of the light-receiving method of this invention. In the figure, 20 is a light receiving surface of the APD, 21 is a condenser lens, 22 is a half mirror, 23 is a mirror, Ps is a first light receiving region, Pm is a second light receiving region, and S is signal light.

ＡＰＤの受光面２０は、図１で説明したように、バイアス電圧の印加により自己増倍作用を有する第１の受光領域Ｐｓと、バイアス電圧が印加されず自己増倍作用を有しない第２の受光領域Ｐｍをもつ。信号光に対するＡＰＤの受光は、通常、図６（Ａ）に示すように第１の受光領域Ｐｓのみに信号光Ｓが入射されるように、集光レンズ２１等によりその集光径が絞られている。   As described with reference to FIG. 1, the light receiving surface 20 of the APD has a first light receiving region Ps that has a self-multiplier effect by applying a bias voltage, and a second light-receiving region Ps that has no self-multiplier effect when no bias voltage is applied. It has a light receiving area Pm. As shown in FIG. 6A, the light receiving diameter of the APD with respect to the signal light is normally reduced by the condensing lens 21 or the like so that the signal light S is incident only on the first light receiving region Ps. ing.

本発明では、図６（Ｂ）に示すように、集光レンズ２１等により照射される信号光Ｓが、第１の受光領域Ｐｓ以外に第２の受光領域Ｐｍにも一部が入射されるように、その集光径を拡大する。信号光Ｓは主として第１の受光領域Ｐｓで受光され、制御系の信号成分Ｉｓとされるが、拡大された集光径を有する信号光Ｓの一部が第２の受光領域Ｐｍでも受光される。第２の受光領域Ｐｍで受光された信号光Ｓの一部は、図４、５で説明したモニタ光とされ、制御系のモニタ成分Ｉｍとされる。   In the present invention, as shown in FIG. 6B, a part of the signal light S irradiated by the condenser lens 21 and the like is incident not only on the first light receiving area Ps but also on the second light receiving area Pm. Thus, the condensing diameter is enlarged. The signal light S is mainly received by the first light receiving region Ps and is used as the signal component Is of the control system, but a part of the signal light S having an enlarged condensed diameter is also received by the second light receiving region Pm. The A part of the signal light S received in the second light receiving region Pm is the monitor light described in FIGS. 4 and 5 and is the monitor component Im of the control system.

図６（Ｃ）は、集光レンズ２１等により照射される第１の受光領域Ｐｓへの信号光Ｓをハーフミラー２２により、その一部を光分岐する。ハーフミラー２２を透過した信号光Ｓは、第１の受光領域Ｐｓで受光され、制御系の信号成分Ｉｓとされる。光分岐された信号光Ｓの一部は、ミラー２３により第２の受光領域Ｐｍで受光してモニタ光とされ、制御系のモニタ成分Ｉｍとされる。   In FIG. 6C, the signal light S to the first light receiving region Ps irradiated by the condenser lens 21 or the like is partially branched by the half mirror 22. The signal light S transmitted through the half mirror 22 is received by the first light receiving region Ps and used as a signal component Is of the control system. A part of the branched signal light S is received by the mirror 23 in the second light receiving region Pm and used as monitor light, and is used as the monitor component Im of the control system.

上述したように、同一のＡＰＤのバイアス電圧による電界が作用せず自己増倍作用を奏しない領域を第２の受光領域とし、この領域で受光した信号光をモニタ光とすることにより、ＰＩＮダイオードを別に用意することなく、温度変化に関係なくＡＰＤの増倍係数を一定とする制御を行なうことができる。また、ＡＰＤの信号光と同一条件にある信号光の一部をモニタ光とすることができるので、均一の性能で高性能の制御を行なうことが可能となる。   As described above, the region where the electric field due to the bias voltage of the same APD does not act and does not exhibit the self-multiplier function is set as the second light receiving region, and the signal light received in this region is used as the monitor light, whereby the PIN diode Can be controlled to make the APD multiplication coefficient constant irrespective of the temperature change. In addition, since a part of the signal light under the same conditions as the signal light of the APD can be used as the monitor light, it is possible to perform high performance control with uniform performance.

本発明に用いるＡＰＤの一例を説明する図である。It is a figure explaining an example of APD used for the present invention. 本発明で用いるＡＰＤの受光領域と感度特性を示す図である。It is a figure which shows the light reception area | region and sensitivity characteristic of APD used by this invention. 本発明で用いるＡＰＤの受光領域における受光性能と周波数特性を示す図である。It is a figure which shows the light reception performance and frequency characteristic in the light reception area | region of APD used by this invention. 本発明の実施形態の一例を説明する図である。It is a figure explaining an example of an embodiment of the present invention. 本発明の実施形態の他の例を説明する図である。It is a figure explaining the other example of embodiment of this invention. 本発明のＡＰＤの受光方法の実施形態を説明する図である。It is a figure explaining embodiment of the light-receiving method of APD of this invention. 本発明の解決しようとする課題を説明するための、ＡＰＤの光電流と逆電圧の関係を示す図である。It is a figure which shows the relationship between the photocurrent and reverse voltage of APD for demonstrating the subject which this invention tends to solve.

符号の説明Explanation of symbols

１…ＡＰＤチップ、２…ｎ＋基板、３…ｎ層、４…ｐ＋拡散領域、５，６…絶縁膜、７…ｐ側電極、７ａ…電極パッド、８…ｎ側電極、１０…ＡＰＤ、１１…前置増幅器（ＴＩＡ）、１２…ハイパスフィルタ（ＨＰＦ）、１３…ロウパスフィルタ（ＬＰＦ）、１４…リミティング増幅器、１５…ピークホールド検波器、１６，１７，１８…差動増幅器（Ｕ１，Ｕ２，Ｕ０）、１９…ＤＣ／ＤＣコンバータ、２０…ＡＰＤの受光面、２１…集光レンズ、２２…ハーフミラー、２３…ミラー、Ｐｓ…第１の受光領域、Ｐｍ…第２の受光領域。 DESCRIPTION OF SYMBOLS 1 ... APD chip, 2 ... n + board | substrate, 3 ... n layer, 4 ... p + diffusion region, 5, 6 ... Insulating film, 7 ... P side electrode, 7a ... Electrode pad, 8 ... N side electrode, 10 ... APD , 11: Preamplifier (TIA), 12: High-pass filter (HPF), 13 ... Low-pass filter (LPF), 14 ... Limiting amplifier, 15 ... Peak hold detector, 16, 17, 18 ... Differential amplifier (U1) , U2, U0), 19 ... DC / DC converter, 20 ... light receiving surface of APD, 21 ... condensing lens, 22 ... half mirror, 23 ... mirror, Ps ... first light receiving region, Pm ... second light receiving region. .

Claims (2)

バイアス電圧が印加され自己増倍作用を有する第１の受光領域と、バイアス電圧が印加されず自己増倍作用を有しない第２の受光領域をもつアバランシェフォトダイオードで信号光を受光し、前記第１の受光領域で受光した光に基づく第１の信号と、前記第２の受光領域で受光した光に基づくモニタ信号とを合成した合成信号を出力するトランスインピーダンス回路と、
前記合成信号から第１の信号を抽出してその強度を出力する回路と、前記合成信号の平均値を出力する回路と、前記平均値と前記第１の信号の強度との差に所定の利得を与え第２の信号を出力する回路を備え、
前記第１の信号の強度と前記第２の信号とが等しくなるように前記バイアス電圧が制御されることを特徴とするアバランシェフォトダイオードのバイアス電圧制御回路。 Receiving a first light receiving area having a self-multiplication effect bias voltage is applied, the signal light in the avalanche photodiode having a second light receiving region having no self-multiplication effect bias voltage is not applied, the first a transimpedance circuit for outputting a first signal based on light received by the first light receiving region and the synthesized signal obtained by synthesizing the monitor signal based on the light received by the second light receiving region,
A circuit that extracts a first signal from the combined signal and outputs the intensity; a circuit that outputs an average value of the combined signal; and a predetermined gain in a difference between the average value and the intensity of the first signal And a circuit for outputting the second signal ,
The bias voltage control circuit for an avalanche photodiode, wherein the bias voltage is controlled so that the intensity of the first signal is equal to the second signal. 前記第２の受光領域で受光したモニタ信号の強度のみを取出す回路をさらに備え、前記モニタ信号の強度に応じて、前記所定の利得を変えることを特徴とする請求項１に記載のアバランシェフォトダイオードのバイアス電圧制御回路。 2. The avalanche photodiode according to claim 1, further comprising a circuit that extracts only the intensity of the monitor signal received in the second light receiving region, wherein the predetermined gain is changed according to the intensity of the monitor signal. Bias voltage control circuit.
JP2003327015A 2003-09-19 2003-09-19 Avalanche photodiode bias voltage control circuit Expired - Fee Related JP3956923B2 (en)

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US10/943,211 US20050092896A1 (en) 2003-09-19 2004-09-17 Light-receiving method of an avalanche photodiode and a bias control circuit of the same
US11/488,077 US7214924B2 (en) 2003-09-19 2006-07-18 Light-receiving method of an avalanche photodiode and a bias control circuit of the same
US11/712,497 US7282692B2 (en) 2003-09-19 2007-03-01 Light receiving method of an avalanche photodiode and a bias control circuit of the same

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