JP3909236B2 - Thermoelectric element module, semiconductor element storage package and semiconductor module - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention is mainly used in the field of optical communication, and includes a thermoelectric element module including a temperature-controllable thermoelectric element, a semiconductor element housing package including the thermoelectric element module, and a semiconductor including the thermoelectric element module. It is about modules.
[0002]
[Prior art]
In recent years, data traffic represented by the Internet and e-mail has increased rapidly. In order to cope with the increase in the amount of information and the increase in speed, optical communication using optical fibers has been introduced in wired transmission with the advantages of low loss and wide bandwidth.
[0003]
In optical communication, a semiconductor laser element (LD) is generally used as the signal source. However, this LD generates a considerable amount of heat when in use, and the LD itself deteriorates due to this heat and the oscillation wavelength is not good. Since it becomes stable, thermoelectric element modules are often used to keep the LD at a temperature at which the oscillation wavelength is stable.
[0004]
As shown in the sectional view of FIG. 4, the thermoelectric element module has a configuration in which a plurality of thermoelectric elements 31 are arranged in parallel and are electrically connected in series via a metal member 34. The thermoelectric element 31 includes a P-type thermoelectric element and an N-type thermoelectric element. In the above configuration, the P-type thermoelectric element and the N-type thermoelectric element are alternately arranged and connected in series. The metal member 34 on the side where current flows from the N-type thermoelectric element to the P-type thermoelectric element due to the Peltier effect causes heat absorption, and the metal member 34 on the side where current flows from the P-type thermoelectric element to the N-type thermoelectric element. A fever occurs. That is, in the thermoelectric module, the temperature at one end of the thermoelectric module decreases according to the amount of current, the temperature at the other end increases, and the current phenomenon is reversed by reversing the direction of the current. It is.
[0005]
This thermoelectric element module is usually used to cool the LD by mounting the LD on the side where the temperature of the thermoelectric element module decreases, and on the side where the temperature of the thermoelectric element module increases when the temperature of the usage environment is low Is used to heat the LD, and in any case, it acts to keep the LD at a temperature that stabilizes the oscillation wavelength.
[0006]
In the thermoelectric module, the metal member 34 is usually made of copper (Cu) because heat generation increases when the electric resistance of the metal member 34 itself is large. Further, a substrate for sandwiching the thermoelectric elements 31 in parallel is necessary, and has a pair of insulator substrates 32 on the top and bottom. The insulator substrate 32 is made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, or a silicon carbide sintered body.
[0007]
Using such a thermoelectric element module, as shown in a sectional view in FIG. 5, a semiconductor element 16 such as an LD is placed on a thermoelectric element module 30 together with a photodiode 19 and a lens assembly 18 via a metal substrate 17. The thermoelectric element module 30 is mounted on the mounting portion 11a on the upper surface of the base 11, and the frame 11 is joined to the upper surface of the base 11 so as to surround the mounting portion 11a. The semiconductor module is completed by being housed in a package including a lid 13 that is attached to the upper surface of the frame 12 so as to cover the mounting portion 11a, and this semiconductor module is used as an oscillation device for optical communication. .
[0008]
The semiconductor module shown in FIG. 5 has a base 11 having a mounting portion 11a on which the thermoelectric element module 30 on which the semiconductor elements 16 and the like are mounted is placed on the upper surface, and an upper surface of the base 11 so as to surround the mounting portion 11a. A frame body 12 that is joined to the frame body 12; a lid body 13 that is joined to the upper surface of the frame body 12 by resistance welding or the like; and a semiconductor element 16 that is aligned with the optical axis and attached to the frame body 12. And an inserted tube 23 for attaching the attached optical fiber 21. The frame body 12 of the package body is provided with a cylindrical insertion tube 23 to which the optical fiber 21 is joined. The end of the insertion tube 23 on the package inner side is made of a light-transmitting material such as sapphire or glass. When the transparent window 20 is installed and the lid 13 is attached, the inside of the package is sealed in a vacuum state or a state filled with an inert gas such as nitrogen.
[0009]
[Problems to be solved by the invention]
The thermoelectric module 30 is required to cool something on one insulator substrate 32 side and to radiate heat from the insulator substrate 32 on the opposite side of the thermoelectric module 30 for the purpose of use of the parts. Used in combination with other parts. In the above example, a semiconductor element such as the semiconductor element 16 whose temperature is to be controlled is mounted on the insulator substrate 32 on one side via the metal substrate 17, and the insulator substrate 32 on the opposite side is attached to the base body 11 of the package body. ing.
[0010]
However, the conventional thermoelectric element module 30 is mainly composed of the insulator substrate 32 made of alumina ceramics and the metal member 34 made of Cu. For this reason, stress is generated due to the difference in the coefficient of thermal expansion between the materials such as the metal substrate 17, the package base base 11, and the insulator substrate 32 of the thermoelectric element module 30, but the thermoelectric element 31 having a particularly low strength. As a result, when a heat cycle test is performed over a long period of time, the solder 33 between the thermoelectric element 31 and the metal member 34 has a problem. Cracks occur, and the current supply to the thermoelectric elements 31 connected in series becomes unstable, so that the thermoelectric element module 30 that performs temperature control cannot be stably operated, and the performance is deteriorated. There was a point.
[0011]
When a semiconductor module in which a semiconductor element 16 such as an LD is mounted on a package in which such a thermoelectric element module 30 is mounted, the temperature control of the semiconductor element 16 becomes insufficient, so that the semiconductor element 16 itself deteriorates and the oscillation wavelength Has become unstable, and as a result, it cannot be used as a stable light source for optical communication.
[0012]
The present invention has been devised in view of the above problems, and its purpose is to firmly connect a thermoelectric element to a metal member and to operate the thermoelectric element bonded to the metal member normally and stably over a long period of time. An object of the present invention is to provide a thermoelectric module that can be used.
[0013]
Another object of the present invention is to provide a semiconductor storage package and a semiconductor module that can operate a semiconductor element mounted on the thermoelectric element module normally and stably over a long period of time by using the thermoelectric element module. There is.
[0014]
[Means for Solving the Problems]
The thermoelectric element module of the present invention is formed by joining both ends of a plurality of thermoelectric elements between a pair of insulator substrates with a metal member interposed therebetween, and a semiconductor element is mounted on one of the insulator substrates. In the thermoelectric element module, the metal member is bonded to the thermoelectric element via a brazing material or an adhesive, and abuts the end surface of the thermoelectric element with a convex portion having an area smaller than the end surface. A reservoir of the brazing material or adhesive is formed between the periphery and the end surface facing the periphery.
[0015]
In the thermoelectric element module of the present invention, in the above configuration, the height of the convex portion is 50 μm or more and 500 μm or less, and the ratio of the area of the upper surface of the convex portion to the area of the end face of the thermoelectric element is 40%. It is characterized by being above and below 70%.
[0016]
The package for housing a semiconductor element of the present invention includes a base, a thermoelectric element module having the above-described configuration placed with the other insulator substrate placed in contact with a placement portion on the top of the base, and an upper surface of the base. It is characterized by comprising a frame body joined so as to surround the mounting portion, and a lid attached to the upper surface of the frame body so as to cover the mounting portion.
[0017]
A semiconductor module according to the present invention includes a semiconductor element storage package having the above-described configuration, a semiconductor element mounted on one of the insulator substrates of the thermoelectric element module, and the lid attached to the upper surface of the frame. It is characterized by comprising.
[0018]
According to the thermoelectric element module of the present invention, a sufficient amount of brazing material or adhesive is accumulated between the end face of the thermoelectric element, the side surface of the convex portion of the metal member, and the surface of the metal member around the convex portion. A space having an appropriate volume is formed, and a brazing material or an adhesive is filled between the space and the end surface of the thermoelectric element and the surface of the metal member provided with the convex portion to form a reservoir, As a result, the thermoelectric element can be joined to the metal member in a three-dimensional manner by joining the thermoelectric element to the metal member provided with the convex portion via the brazing material or the adhesive. The module can be operated normally and stably over a long period of time.
[0019]
In addition, according to the thermoelectric element module of the present invention, by setting the height of the convex portion to 50 μm or more and 500 μm or less, the end surface of the thermoelectric element, the side surface of the convex portion of the metal member, and the surface of the metal member around the convex portion The space formed between them is filled with a necessary and sufficient amount of brazing material or adhesive to form an appropriate reservoir, and the thermoelectric element is firmly bonded to the surface of the metal member provided with the convex portions. It becomes possible. Further, the ratio of the area of the upper surface of the convex portion to the area of the end face of the thermoelectric element is 40% or more and 70% or less, so that the heat transfer from the thermoelectric element to the metal member or vice versa can be efficiently performed. Therefore, efficient temperature control can be performed.
[0020]
Also, the semiconductor element storage package of the present invention in which the thermoelectric element module of the present invention is placed, and the semiconductor module of the present invention in which a semiconductor element is mounted on the semiconductor element storage package of the present invention and a lid is attached. Therefore, since the heat transfer between the semiconductor element and the thermoelectric module can be performed normally, stably and efficiently over a long period of time, the semiconductor element mounted on the thermoelectric element module operates normally and stably over a long period of time. Can be made.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
[0022]
FIG. 1 is a cross-sectional view showing an example of an embodiment of a thermoelectric element module of the present invention, and FIG. 2 is an enlarged cross-sectional view of a main part of a joint portion between the thermoelectric element and the metal member in FIG. In these drawings, 1 is a thermoelectric element, 2 is an insulating substrate, 3 is solder as a brazing material or adhesive for bonding, 4 is a metal member, and 5 is a metallized metal layer.
[0023]
The thermoelectric element 1 is composed of a sintered body such as a Bi—Te material, an Fe—Si material, a Si—Ge material, or a Co—Sb material. If the thermoelectric element 1 is made of, for example, a Bi-Te-based material, the main characteristics are, for example, that the P-type thermoelectric element has a Seebeck coefficient of 200 μV / K, the N-type thermoelectric element has a Seebeck coefficient of −200 μV / K, P The specific resistivity of both type and N type thermoelectric elements is 1 mΩ · cm, and the thermal conductivity of both P type and N type thermoelectric elements is 1.5 W / mK. Since it is difficult to join the thermoelectric element 1 with a brazing material such as the solder 3 as it is, Ni plating or the like is applied to the end face as a surface treatment.
[0024]
The insulator substrate 2 acts as a support member for the thermoelectric element 1 and the metal member 4, and is formed of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, or a silicon carbide sintered body. . In addition, a metallized metal layer 5 is deposited on the surface of the insulator substrate 2, and the metallized metal layer 5 acts as a base metal when the metal member 4 is brazed to the insulator substrate 2.
[0025]
If the insulator substrate 2 is made of, for example, an aluminum oxide sintered body, an appropriate organic solvent / solvent is added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide to form a slurry. At the same time, this is formed into a sheet shape by a conventionally known doctor blade method or calendar roll method to obtain a ceramic green sheet (ceramic green sheet). It is manufactured by firing at 1600 ° C.
[0026]
The metal member 4 is provided with a convex portion 4 a that contacts the end surface of the thermoelectric element 1 on the surface opposite to the surface bonded to the insulator substrate 2. The convex portion 4 a functions to support the thermoelectric element 1. Have.
[0027]
The convex portion 4a is formed in a predetermined position and a predetermined size at a predetermined position on the surface of the metal member 4 by applying a conventionally known processing method such as an etching method or a pressing method to the metal member 4 made of copper, aluminum, or the like. Formed. Or it forms simultaneously when forming the metal member 4 by giving a rolling method, a punching method, etc. to an ingot (lump).
[0028]
In this way, when the end surface of the thermoelectric element 1 is brought into contact with the convex portion 4a provided on the metal member 4 and joined via the solder 3 as the brazing material, the end surface of the thermoelectric element 1, the side surface of the convex portion 4a, and the convex portion are formed. A space having an appropriate volume to be a reservoir of a sufficient amount of brazing material or adhesive is formed between the surface of the metal member 4 around the portion 4a, and the end face and the convex portion of the thermoelectric element 1 in this space Solder 3 fills and interposes between the surface of the metal member provided with 4a to form a reservoir, and as a result, via the solder 3 of thermoelectric element 1 to metal member 4 provided with protrusion 4a. All the joining becomes three-dimensional and the joining strength becomes extremely strong, and the thermoelectric element 1 can be reliably and firmly joined to the metal member 4 provided with the convex portions 4a.
[0029]
The protrusion 4a of the metal member 4 preferably has a height of 50 μm or more and 500 μm or less, and the ratio of the area of the upper surface of the protrusion 4a to the area of the end face of the thermoelectric element 1 is 40% or more and 70% or less. It is preferable.
[0030]
When the height of the convex portion 4a is less than 50 μm, the volume of the space formed between the end face of the thermoelectric element 1, the side surface of the convex portion 4a, and the surface of the metal member 4 around the convex portion 4a becomes small. There is a tendency that it is difficult to firmly join the thermoelectric element 1 to the metal member 4 provided with the convex portions 4a without forming a sufficient reservoir portion of the solder 3. On the other hand, if it exceeds 500 μm, the volume of the space formed between the end face of the thermoelectric element 1, the side surface of the convex portion 4a, and the surface of the metal member 4 around the convex portion 4a becomes too large, and the solder 3 is placed in the space. It is difficult to completely fill the thermoelectric element 1 with the metal member 4 provided with the convex portions 4a without forming a sufficient reservoir portion of the solder 3 because the solder cannot be completely filled. . Therefore, it is preferable that the height of the convex portion 4a be in the range of 50 μm to 500 μm.
[0031]
Further, when the area of the upper surface of the convex portion 4a is less than 40% of the area of the end face of the thermoelectric element 1, it becomes difficult to efficiently perform heat transfer from the thermoelectric element 1 to the metal member 4 or vice versa. Tend. Moreover, when it becomes 70% or more, the volume of the space formed between the end surface of the thermoelectric element 1, the side surface of the convex part 4a, and the surface of the metal member 4 around the convex part 4a becomes small, and sufficient solder 3 is collected. There is a tendency that it is difficult to firmly join the thermoelectric element 1 to the metal member 4 provided with the convex portions 4a without forming the portion. Therefore, the area of the upper surface of the convex part 4a is preferably 40% or more and 70% or less with respect to the area of the end face of the thermoelectric element 1.
[0032]
When the metal member 4 having the convex portion 4a is coated with nickel having good conductivity, corrosion resistance and good wettability with the solder 3 on its surface, the metal member 4 and the external electric circuit When the thermoelectric element 1 is bonded to the metal member 4 via the solder 3, the bonding can be strengthened. Accordingly, it is desirable to deposit nickel on the surface of the metal member 4 having the convex portions 4a by plating, which has good conductivity, corrosion resistance, and good wettability with the brazing material.
[0033]
FIG. 3 is a cross-sectional view showing an example of an embodiment of the semiconductor element storage package of the present invention provided with the thermoelectric element module 10 of the present invention and the semiconductor module of the present invention.
[0034]
In FIG. 3, reference numeral 11 denotes a base made of metal or the like, 12 denotes a frame joined to the upper surface of the base body 11, and 13 denotes a lid attached to the upper surface of the frame 12. The base body 11, the frame body 12, and the lid body 13 constitute a container for housing the thermoelectric element module 10 therein.
[0035]
The base 11 serves as a support member for supporting the thermoelectric element module 10, and has a mounting portion 11a for mounting the thermoelectric element module 10 at the center of the upper surface thereof. A thermoelectric element module 10 is bonded and fixed to 11a with an adhesive such as solder.
[0036]
The base 11 is made of a metal material such as an iron-nickel-cobalt alloy or a copper-tungsten alloy. It is manufactured by applying a conventionally well-known metal processing method such as a punching method.
[0037]
The base 11 has a metal having excellent corrosion resistance on its outer surface and good wettability to the brazing material, specifically, a nickel layer having a thickness of 2 to 6 μm and a gold layer having a thickness of 0.5 to 5 μm. If the base 11 is deposited by plating or the like, it is possible to effectively prevent the base 11 from being oxidatively corroded, and the thermoelectric element module 10 can be firmly bonded and fixed to the upper surface of the base 11. Accordingly, in order to effectively prevent the oxidative corrosion and firmly fix the thermoelectric element module 10 on the upper surface, the base 11 has a nickel layer having a thickness of 2 to 6 μm and a gold layer having a thickness of 0.5 to 5 μm on the surface. The layers are preferably deposited sequentially by plating or the like.
[0038]
A frame body 12 is joined to the upper surface of the base body 11 so as to surround the mounting portion 11a on which the thermoelectric element module 10 is mounted, and the thermoelectric element module 10 is accommodated inside the frame body 12. A void is formed for this purpose.
[0039]
The frame body 12 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy, and is formed by, for example, forming an ingot (lump) such as an iron-nickel-cobalt alloy into a frame shape by pressing. Attachment to 11 is performed by brazing the upper surface of the base 11 and the lower surface of the frame body 12 with a silver brazing material.
[0040]
Further, the frame body 12 has a through hole 22 and a notch 24 on the side wall thereof, and an iron-nickel-cobalt alloy, an iron-nickel alloy or the like is formed around the through hole 22 or the through hole 22 of the frame body 12. A cylindrical insertion tube 23 made of a metal material is attached. In addition, a transparent window 20 made of a translucent material such as sapphire or glass is fixed to the end of the insertion tube 23 inside the package, and an optical component having a built-in optical component such as a lens disposed on the outside thereof. The output signal light of the LD (not shown) is optically coupled to an optical fiber (not shown) by a not shown.
[0041]
The through hole 22 formed in the side wall of the frame body 12 is formed in a predetermined shape by, for example, drilling a hole in the frame body 12.
[0042]
A terminal body 25 is inserted into the notch 24 on the side wall of the frame body 12.
[0043]
The terminal body 25 is composed of an insulator 26 made of an electrically insulating material such as an aluminum oxide sintered body and a plurality of wiring layers 27, and the wiring layer 27 is electrically insulated from the metal frame 12 with a metal frame. It is for arrange | positioning from the inner side of 12 to the outer side. The terminal body 25 has a metal layer deposited beforehand on the side surface of the insulator 26, and the metal layer is attached to the inner wall surface of the cutout portion 24 of the frame body 12 via a brazing material such as silver solder. Thus, the frame 12 is inserted into the notch 24.
[0044]
The insulator 26 of the terminal body 25 is made, for example, by adding an appropriate organic solvent / solvent to a raw material powder such as aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc., and mixing it with a well-known doctor. A ceramic green sheet (ceramic green sheet) is obtained by forming into a sheet shape by a blade method or a calender roll method. After that, the ceramic green sheet is appropriately punched and laminated in a plurality of layers at high and low temperatures (about It is manufactured by firing at 1600 ° C.
[0045]
Further, the insulator 26 of the terminal body 25 is formed with a step portion 26a in an area located inside the frame body 12, and a plurality of wiring layers 27 are formed from the upper surface of the step portion 26a to the outside of the frame body 12. Is formed.
[0046]
The wiring layer 27 serves as a conductive path for connecting each electrode of the thermoelectric element module 10 to an external electric circuit. In the wiring layer 27, a region formed in the step portion 26a of the insulator 26 has a thermoelectric element. Each electrode of the module 10 is electrically connected through a lead wire 28, and an external lead terminal (not shown) connected to an external electric circuit is connected to a brazing material in a region located outside the frame body 12. It is attached via.
[0047]
The wiring layer 27 is formed of tungsten, molybdenum, manganese, or the like. For example, a metal paste obtained by adding and mixing an organic solvent / solvent to a powder of tungsten or the like is well known in advance in a ceramic green sheet to be an insulator 26. The insulator 26 is formed by printing and applying a predetermined pattern by a screen printing method.
[0048]
The wiring layer 27 is formed by depositing a metal having excellent corrosion resistance such as nickel and gold on the exposed surface and excellent wettability with the brazing material to a thickness of 1 to 20 μm by plating. Thus, the oxidative corrosion can be effectively prevented and the connection of the lead wire 28 to the wiring layer 27 can be strengthened. Therefore, it is preferable that a metal having excellent corrosion resistance such as nickel and gold and excellent wettability with the brazing material is deposited on the exposed surface of the wiring layer 27 to a thickness of 1 to 20 μm.
[0049]
On the other hand, external lead terminals are brazed and attached to the wiring layer 27 via a brazing material such as silver solder, and the external lead terminals serve as external electric circuits for each electrode of the thermoelectric module 10 accommodated in the container. The thermoelectric element module 10 that becomes a conductive path to be electrically connected and is accommodated in the container by connecting the external lead terminal to the external electric circuit is connected to the external electric circuit via the lead wire 28, the wiring layer 27, and the external lead terminal. It will be electrically connected.
[0050]
Further, a lid body 13 made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy is attached to the upper surface of the frame body 12, whereby the base body 11, the frame body 12, and the lid body 13 are attached. The thermoelectric element module 10 and an optical semiconductor element such as an LD mounted thereon and the semiconductor element are hermetically sealed inside the container. Thus, the semiconductor module of the present invention is configured, and like the semiconductor module shown in FIG. 5, an optical fiber is connected and used for an oscillation device or the like for optical communication.
[0051]
Attachment of the lid 13 to the upper surface of the frame 12 is performed by welding such as a seam weld method.
[0052]
It should be noted that the present invention is not limited to the embodiments described above, and various modifications may be made without departing from the spirit of the present invention. For example, in the example of the above-described embodiment, the protrusion 4a formed on the metal member 4 is formed integrally with the metal member 4, but the protrusion 4a is formed separately by the same material and method as the metal member. Alternatively, the protrusion 4a may be bonded and fixed to the metal member 4 via a brazing material or the like.
[0053]
【The invention's effect】
As described above, according to the thermoelectric element module of the present invention, both ends of a plurality of thermoelectric elements are joined to each other with a metal member interposed between a pair of insulator substrates. A thermoelectric element module on which a semiconductor element is mounted, wherein the metal member abuts the end surface of the thermoelectric element with a convex portion having an area smaller than the end surface, and the periphery of the convex portion and the end surface of the thermoelectric element facing the convex portion Since a reservoir of brazing material or adhesive is formed between the thermoelectric element and the thermoelectric element via the brazing material or adhesive, the thermoelectric element is three-dimensionally bonded to the metal member provided with the convex portion. Can be connected to the metal member very firmly, so that there is no problem in peeling trouble between the electrodes due to thermal distortion at the joint between the metal member and the thermoelectric element, and the thermoelectric element module can be used for a long time. In Or it can be operated normally and stably.
[0054]
In addition, according to the thermoelectric element module of the present invention, by setting the height of the convex portion to 50 μm or more and 500 μm or less, the end surface of the thermoelectric element, the side surface of the convex portion of the metal member, and the surface of the metal member around the convex portion The space formed between them is filled with a necessary and sufficient amount of brazing material or adhesive to form an appropriate reservoir, and the thermoelectric element is firmly bonded to the surface of the metal member provided with the convex portions. It becomes possible.
[0055]
Further, the ratio of the area of the upper surface of the convex portion to the area of the end face of the thermoelectric element is 40% or more and 70% or less, so that the heat transfer from the thermoelectric element to the metal member or vice versa can be efficiently performed. Therefore, efficient temperature control can be performed.
[0056]
Further, according to the semiconductor storage package of the present invention in which the thermoelectric element module of the present invention is placed, and the semiconductor module of the present invention, the reliability of the thermoelectric module can be improved and can be operated normally. Since the heat transfer between the semiconductor element and the thermoelectric module can be performed normally, stably and efficiently over a long period of time, the semiconductor element mounted on one surface of the thermoelectric element module can be normally and stably over a long period of time. It can be operated.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an example of an embodiment of a thermoelectric element module of the present invention.
FIG. 2 is an enlarged cross-sectional view of a main part of a joint portion between a thermoelectric element and a metal member in FIG.
FIG. 3 is a cross-sectional view showing an example of an embodiment of a semiconductor element housing package of the present invention provided with a thermoelectric element module of the present invention and a semiconductor module of the present invention.
FIG. 4 is a cross-sectional view showing an example of an embodiment of a conventional thermoelectric element module.
FIG. 5 is a cross-sectional view showing an example of an embodiment of a semiconductor module including a thermoelectric element module.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Thermoelectric element 2 ... Insulator board 3 ... Solder (brazing material or adhesive)
4 ... Metal member 4a ... Projection
11 ... Base
12 ... Frame
13: Lid
10 ... Thermoelectric module
16 ... Semiconductor element (semiconductor laser element: LD)

Claims (4)

A thermoelectric module in which both ends of a plurality of thermoelectric elements are joined with a metal member interposed between a pair of insulator substrates, and a semiconductor element is mounted on one of the insulator substrates, The metal member is joined to the thermoelectric element via a brazing material or an adhesive, and comes into contact with the end surface of the thermoelectric element with a convex portion having an area smaller than the end surface, and the periphery of the convex portion and the end surface facing the convex portion The thermoelectric element module is characterized in that a reservoir of the brazing material or adhesive is formed therebetween. The height of the convex part is 50 μm or more and 500 μm or less, and the ratio of the area of the upper surface of the convex part to the area of the end face of the thermoelectric element is 40% or more and 70% or less. 1. The thermoelectric element module according to 1. The thermoelectric element module according to claim 1 or 2, wherein the base, the thermoelectric element module placed on the top surface of the base body in contact with the other insulator substrate, and the placement portion on the top surface of the base body. A package for housing a semiconductor element, comprising: a frame body joined so as to surround the frame body; and a lid body attached to the upper surface of the frame body so as to cover the mounting portion. A package for housing a semiconductor element according to claim 3, a semiconductor element mounted on one of the insulator substrates of the thermoelectric element module, and the lid attached to the upper surface of the frame. A featured semiconductor module.

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