JP3907898B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3907898B2
JP3907898B2 JP35397199A JP35397199A JP3907898B2 JP 3907898 B2 JP3907898 B2 JP 3907898B2 JP 35397199 A JP35397199 A JP 35397199A JP 35397199 A JP35397199 A JP 35397199A JP 3907898 B2 JP3907898 B2 JP 3907898B2
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Japan
Prior art keywords
film
region
impurity
gate electrode
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP35397199A
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English (en)
Japanese (ja)
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JP2000236096A (ja
JP2000236096A5 (enExample
Inventor
久 大谷
舜平 山崎
政隆 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Priority to JP35397199A priority Critical patent/JP3907898B2/ja
Publication of JP2000236096A publication Critical patent/JP2000236096A/ja
Publication of JP2000236096A5 publication Critical patent/JP2000236096A5/ja
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Publication of JP3907898B2 publication Critical patent/JP3907898B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP35397199A 1998-12-18 1999-12-14 半導体装置の作製方法 Expired - Fee Related JP3907898B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35397199A JP3907898B2 (ja) 1998-12-18 1999-12-14 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP36156398 1998-12-18
JP10-361563 1998-12-18
JP35397199A JP3907898B2 (ja) 1998-12-18 1999-12-14 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000236096A JP2000236096A (ja) 2000-08-29
JP2000236096A5 JP2000236096A5 (enExample) 2004-11-11
JP3907898B2 true JP3907898B2 (ja) 2007-04-18

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ID=26579958

Family Applications (1)

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JP35397199A Expired - Fee Related JP3907898B2 (ja) 1998-12-18 1999-12-14 半導体装置の作製方法

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JP (1) JP3907898B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008310298A (ja) * 2007-05-16 2008-12-25 Advanced Lcd Technologies Development Center Co Ltd 表示装置および電子装置
JP6506973B2 (ja) * 2015-01-21 2019-04-24 株式会社ジャパンディスプレイ 表示装置
CN113437099B (zh) * 2021-05-13 2023-10-31 北京大学深圳研究生院 光电探测器及其制造方法及相应的光电探测方法

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JP2000236096A (ja) 2000-08-29

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