JP3895277B2 - Sputtering target bonded to a sputtering target or backing plate with less generation of particles, and method of manufacturing the same - Google Patents
Sputtering target bonded to a sputtering target or backing plate with less generation of particles, and method of manufacturing the same Download PDFInfo
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- JP3895277B2 JP3895277B2 JP2002543041A JP2002543041A JP3895277B2 JP 3895277 B2 JP3895277 B2 JP 3895277B2 JP 2002543041 A JP2002543041 A JP 2002543041A JP 2002543041 A JP2002543041 A JP 2002543041A JP 3895277 B2 JP3895277 B2 JP 3895277B2
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- sputtering target
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Links
- 238000005477 sputtering target Methods 0.000 title claims description 82
- 239000002245 particle Substances 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000005507 spraying Methods 0.000 claims description 51
- 239000011248 coating agent Substances 0.000 claims description 42
- 238000000576 coating method Methods 0.000 claims description 42
- 238000004544 sputter deposition Methods 0.000 claims description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 229910000838 Al alloy Inorganic materials 0.000 claims description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 41
- 239000000463 material Substances 0.000 description 20
- 238000007750 plasma spraying Methods 0.000 description 19
- 230000003746 surface roughness Effects 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 230000003628 erosive effect Effects 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 239000007921 spray Substances 0.000 description 10
- 239000010935 stainless steel Substances 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- 238000007751 thermal spraying Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005422 blasting Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000861 Mg alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Description
【技術分野】
【０００１】
本発明は、成膜中にパーティクル発生の少ないスパッタリングターゲット又はバッキングプレート及びその製造方法に関する。
【技術分野】
【０００２】
近年、膜厚や成分を容易に制御できるスパッタリング法が、電子・電気部品用材料の成膜法の一つとして多く使用されている。
このスパッタリング法は正の電極と負の電極とからなるターゲットとを対向させ、不活性ガス雰囲気下でこれらの基板とターゲットの間に高電圧を印加して電場を発生させるものであり、この時電離した電子と不活性ガスが衝突してプラズマが形成され、このプラズマ中の陽イオンがターゲット（負の電極）表面に衝突してターゲット構成原子を叩きだし、この飛び出した原子が対向する基板表面に付着して膜が形成されるという原理を用いたものである。
【０００３】
このスパッタリング法による薄膜の形成に際し、パーティクルの発生という問題が大きく取り上げられるようになってきた。このパーティクルは、例えばスパッタリング法におけるターゲット起因のものについて説明すると、ターゲットをスパッタリングした場合、薄膜は基板以外に薄膜形成装置の内壁や内部にある部材等のいたるところに堆積する。ターゲットのエロージョン部以外の面及び側面も例外ではなく、スパッタ粒子が堆積しているのが観察される。
【０００４】
そしてこのような薄膜形成装置内にある部材等から剥離した薄片が直接基板表面に飛散して付着することがパーティクル発生の大きな原因の一つであると考えられている。
また、一般にはターゲットの側面は直接プラズマに向き合っている訳ではないので、側面からのパーティクルの発生を問題視している例は少ない。したがって、これまでターゲットの中央部と外周縁部の非エロージョン部に対策を講ずる例が多かったが、ターゲット使用効率向上のためスパッタ面の全面がスパッタされる傾向にあり、このような対策は逆にパーティクルを増加させる可能性がある。
最近では、ＬＳＩ半導体デバイスの集積度が上がる（１６Ｍビット、６４Ｍビットさらには２５６Ｍビット）一方、配線幅が０．２５μｍ以下になるなどにより微細化されつつあるので、上記のようなパーティクルによる配線の断線や短絡と言った問題が、より頻発するようになった。
【０００５】
このように、電子デバイス回路の高集積度化や微細化が進むにつれてパーティクルの発生は一層大きな問題となってきた。
一般に、スパッタリングターゲットはそれよりも寸法が大きいバッキングプレートに溶接、拡散接合あるいははんだ付け等の手段により接合されるが、スパッタリングの安定性から、バッキングプレートに接合するスパッタリングターゲットの側面が該バッキングプレートに向かって、通常末広がりの傾斜面を持つように形成されている。
既に知られているように、バッキングプレートは背面が冷却材と接触してターゲットを冷却する役目を持っており、熱伝導性の良いアルミニウムや銅又はこれらの合金等の材料が使用されている。
前記スパッタリングターゲットの側面は、スパッタリングによるエロージョンを受ける（摩耗）箇所ではない。しかし、ターゲットのエロージョン面に近接しているので、スパッタリング操作中に飛来するスパッタ粒子が付着し、より堆積するという傾向がある。
一般に、スパッタリングターゲットのエロージョン面は旋盤加工により平滑面としており、また前記傾斜している側面も同様に旋盤加工されている。
【０００６】
ところが、このような傾斜側面から、一旦付着したスパッタ粒子（堆積物）が再び剥離し、それが浮遊してパーティクル発生の原因となることが分かった。
また、このような堆積物の剥離は平坦な周辺のエロージョン面近傍よりもむしろ、そこから離れている箇所からの方が、堆積物の剥離が多くなっているのが観察された。
このような現象は、必ずしも明確に把握されていた訳でなく、また特に対策が講じられていた訳でもない。しかしながら、上記のように電子デバイス回路の高集積度化や微細化の要請から、このような箇所からのパーティクルの発生も大きな問題となってきた。
このような問題を解決しようとして、ターゲット側面及びバッキングプレートの近傍部分をブラスト処理し、アンカー効果により付着力を向上させる提案もなされた。
【０００７】
しかし、この場合、ブラスト材の残留による製品への汚染の問題、残留ブラスト材上に堆積した付着粒子の剥離の問題、さらには付着膜の選択的かつ不均一な成長による剥離の問題が新たに生じ、根本的解決にはならなかった。
また、特にこのようなブラスト処理しても、ターゲット側面及びバッキングプレートとの間には材質的な相違やそれによる熱膨張の差異、さらには材料間で明確な段差が生ずるので、パーティクル発生の原因となる傾向がある。そして、この場合には、上記のようにエロージョン部から距離があるので、これがパーティクル発生の原因となっていることに気付かないという問題がある。
このようなことから、本発明者らは先にスパッタリングターゲットの少なくとも側面に、中心線平均粗さＲａ１０〜２０μｍ の溶射皮膜を備えたパーティクル発生の少ないスパッタリングターゲットを提案した（特許文献１参照）。
【特許文献１】
特願２０００−３１４７７８
【０００８】
この技術自体は従来の方法に比べはるかに付着膜の剥離を防止し、パーティクル発生を抑制できる効果があった。しかし、この溶射皮膜形成のためにアーク溶射又はプラズマ溶射を使用していたが、前者は表面粗さが大きくなりすぎる傾向があり、そのばらつきも大きく付着膜の密着性が不均一であり、また後者は表面粗さが小さくアンカー効果が低く付着物との密着性が劣り、必ずしも満足のいくものではなかった。
また、このようなパーティクル発生を抑制のために形成される溶射皮膜の問題は前記のターゲット側面の問題だけではなく、その他のスパッタリングターゲットの面、バッキングプレート又はスパッタリング装置内の機器の不要な膜が堆積する面においても、同様の問題があった。
【発明の開示】
【発明が解決しようとする課題】
【０００９】
本発明は、上記のような問題から、溶射皮膜の改善を図り、より効果的にターゲット、バッキングプレートその他のスパッタリング装置内の機器の不要な膜が堆積する面から発生する該堆積物の剥離・飛散を直接的に防止できるスパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲットを得ることを目的とする。
上記の課題を解決するために、本発明者らは鋭意研究を行った結果、溶射皮膜工程の改善により、成膜中のパーティクル発生を効率良く抑制できるとの知見を得た。 本発明はこの知見に基づき、
【００１０】
１． スパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲットの不要な膜が堆積する面に、溶射皮膜の総膜厚が２００μｍ以上のアーク溶射皮膜及びさらにその上にプラズマ溶射皮膜を形成したことを特徴とするパーティクル発生の少ないスパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲット。
２．スパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲットの不要な膜が堆積する面に、溶射皮膜の総膜厚が２００μｍ以上のアルミニウムのアーク溶射皮膜及びさらにその上にマグネシウム含有アルミニウム合金プラズマ溶射皮膜を形成したことを特徴とするパーティクル発生の少ないスパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲット
３．中心線平均粗さＲａ１０〜２０μｍの溶射皮膜を備えていることを特徴とする上記１又は２記載のパーティクル発生の少ないスパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲット
４．スパッタリングターゲットの側面及びバッキングプレートの面に亘って連続的に溶射皮膜を備えていることを特徴とする上記１〜３のいずれかに記載のパーティクル発生の少ないスパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲット
５．スパッタリングターゲットのスパッタ面よりもやや離れた側面位置からバッキングプレート方向又はバッキングプレート面に亘って溶射皮膜を備えていることを特徴とする上記１〜４のいずれかに記載のパーティクル発生の少ないスパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲット
【００１１】
６．スパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲットの不要な膜が堆積する面に、溶射皮膜の総膜厚が２００μｍ以上のアーク溶射皮膜及びさらにその上にプラズマ溶射皮膜を形成したことを特徴とするパーティクル発生の少ないスパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲットの製造方法
７．中心線平均粗さＲａ１０〜２０μｍの溶射皮膜を備えていることを特徴とする上記６記載のパーティクル発生の少ないスパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲットの製造方法
８．スパッタリングターゲットの側面及びバッキングプレートの面に亘って連続的に溶射皮膜を備えていることを特徴とする上記６又は７に記載のパーティクル発生の少ないスパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲットの製造方法
９．スパッタリングターゲットのスパッタ面よりもやや離れた側面位置からバッキングプレート方向又はバッキングプレート面に亘って溶射皮膜を備えていることを特徴とする上記６〜８のいずれかに記載のパーティクル発生の少ないスパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲットの製造方法
１０．溶射皮膜としてアルミニウム又はアルミニウム合金を用いることを特徴とする上記６〜９のいずれかに記載のパーティクル発生の少ないスパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲットの製造方法
１１．アルミニウムのアーク溶射皮膜及びさらにその上にマグネシウム含有アルミニウム合金プラズマ溶射皮膜を形成したことを特徴とする上記６〜１０のいずれかに記載のパーティクル発生の少ないスパッタリングターゲット又はバッキングプレートに接合したスパッタリングターゲットの製造方法、を提供する。
【発明を実施するための最良の形態】
【００１２】
アルミニウム又はアルミニウム合金を溶射する方法としてアーク溶射とプラズマ溶射がある。アーク溶射もプラズマ溶射も原理的には同じで、アーク溶射はアークを熱源とし、プラズマ溶射はプラズマジェット炎で溶射材料を溶融し、高温の溶融粒子を飛行させ、材料表面に衝突、積層させて皮膜を形成する方法である。
しかし、このアーク溶射又はプラズマ溶射をスパッタリングターゲット、バッキングプレート又はスパッタリング装置内の機器の不要な膜が堆積する面に形成して、皮膜の剥離を調査したところ、非常に大きな差があることが分かった。
【００１３】
アーク溶射のみで溶射皮膜を形成したところ、アルミニウム又はアルミニウム合金の溶融部の面積が広く、耐剥離性は期待していたよりも悪く懸念の残る表面状態であった。そして、実際にスパッタリングした結果、堆積物の一部が剥離するのが観察された。
これに対し、プラズマ溶射のみで溶射皮膜を形成したところ、表面粗さが不足し、アンカー効果が低く、スパッタリングの際の付着膜との密着性が低くなり、結果としてパーティクル低減効果が低くなった。
このため、溶射の方法を種々検討した結果、アーク溶射皮膜及びさらにその上にプラズマ溶射皮膜を形成することにより、一定の面積をもつ表面に対して、均一且つ安定して最適な表面粗さの溶射皮膜を形成できることが分かった。
【００１４】
一般に、プラズマ溶射はアーク溶射に比べて溶融粒子の衝突エネルギーが大きく、溶融粒子が扁平化して表面粗さが小さくなってしまう。
この両溶射法の大きな違いは、熱源温度と溶融粒子の飛行速度である。プラズマ溶射は約１００００°Ｃ、溶融粒子の飛行速度が約７００ｍ／秒であり、他方
アーク溶射は約５０００°Ｃ、１００ｍ／秒程度と言われている。
このような、プラズマ溶射とアーク溶射の機能を生かし、始めにアーク溶射にて被覆される材料表面に表面粗さが大きめの溶射皮膜を形成した後、その上にプラズマ溶射を用いて、表面粗さを下げるように最適な表面粗さとする。
【００１５】
これによって、均一で安定した表面粗さのコントロールが容易に得ることが可能となった。なお、プラズマ溶射の後にアーク溶射を施した場合には、表面粗さが大きくなり過ぎ最適値を超える結果となったので、好ましくない。
本発明の溶射皮膜は、スパッタリングターゲット、バッキングプレート又はスパッタリング装置内の機器の不要な膜が堆積する面に形成することができる。この溶射皮膜により好適なアンカー効果を持たせるためには、中心線平均粗さＲａ１０〜２０μｍの溶射皮膜を備えていることが望ましい。
【００１６】
前記アーク溶射後にプラズマ溶射を行うことにより、容易に達成することができる。そして、これによりパーティクル発生を効果的に抑制できるという優れた効果が得られる。本発明の溶射を、例えばターゲットに適応する場合、矩形、円形、その他の形状のターゲットにも適用できる。この場合、非エロージョン部であるターゲットの側面に溶射皮膜を形成することも効果的である。
ターゲット側面は傾斜面とすることが多いが、垂直な面あるいはこれらの面に継続した平面を持つ構造のスパッタリングターゲットにも適用できる。本発明はこれらを全て含むものである。
特に、ターゲット側面からのパーティクル発生については、看過されがちであるが、スパッタリングターゲットの傾斜側面から、一旦付着したスパッタ粒子（堆積物）が再び剥離し、それが浮遊してパーティクル発生の原因となることが観察される。
しかも、このような堆積物の剥離が平坦な周辺のエロージョン面近傍よりもむしろ、そこから離れている箇所からの方が、堆積物の剥離が多くなっている。したがって、このような側面への溶射膜の形成は極めて容易であり、かつパーティクル発生を効果的に抑制できるメリットがある。
【００１７】
溶射皮膜の材料としては、アーク溶射及びプラズマ溶射が可能な材料であるならば、ターゲット材料と同質の材料を使用できるし、また他の材料を使用することもできる。この場合、制限となるのは基板へのスパッタリング薄膜が汚染されない材料であることが望ましいということだけである。
上記の通り、溶射皮膜は、固有のアンカー効果を示すので、溶射皮膜脆弱で溶射皮膜自体が剥離することにより汚染の原因とならない限り、特に制限を受けない。しかし、溶射皮膜としてアルミニウム又はアルミニウム合金を用いるのが、材料の入手と操作の簡便さ及び汚染の防止という観点から望ましいと言える。
その例を示すと、Ｔｉ、Ｚｒ、Ｈｆ、Ｎｂ、Ｔａ、Ｍｏ、Ｗ、Ａｌ、Ｃｕ、これらを主成分とする合金等を使用できる。
【００１８】
また、バッキングプレート材としては、通常使用されている銅、銅合金系、アルミニウム、アルミニウム合金系等を使用でき、これらに特に制限はない。スパッタ装置内の機器については、特に材料を特定する必要はなくステンレスその他の材料表面に溶射皮膜を形成することができる。
スパッタリングターゲットの側面が傾斜面である場合、特にバッキングプレートに接合するスパッタリングターゲットの側面が該バッキングプレートに向かって末広がりの傾斜面を持つスパッタリングターゲットにも使用できる。
特に、本発明の溶射皮膜は、スパッタリングターゲットの側面及びバッキングプレートの面に亘って連続的に溶射皮膜が形成されているのが望ましい。
【００１９】
上記の通り、ターゲット側面及びバッキングプレートとの間には材質的な相違やそれによる熱膨張の差異、さらには材料間で明確な段差が生じ、パーティクル発生の原因となるが、この部位により強固なアンカー効果を有する溶射皮膜を形成することにより、パーティクル発生を効果的に防止できる。
バッキングプレートへの連続した溶射皮膜の形成は、ターゲットの露出した面の全てであってもよいし、またターゲットとの接合部近傍であってもよい。本発明はこれらの全てを含む。スパッタリングターゲットの側面、下方平坦面及びバッキングプレートの面に亘って連続的に溶射皮膜が形成できるのは当然である。
【実施例】
【００２０】
次に、本発明の実施例及び比較例を説明する。なお、実施例はあくまで本発明の一例であり、この実施例に制限されるものではない。すなわち、本発明の技術思想に基づく、変形や他の態様は全て本発明に包含される。
【００２１】
（実施例１）
ステンレス板（ＳＵＳ３０４）に以下の条件溶射皮膜を形成した。
（アーク溶射条件）
電流：２０Ａ
電圧：２６０Ｖ
Ａｉｒ圧：０．５５ＭＰａ ( ≒８０ｐｓｉ )
使用ワイヤー：φ１．６ｍｍアルミニウムワイヤー（純度９９．６％）
ワイヤーフィード量：６ｇ／ｍｉｎ
溶射ガンとステンレス板との距離２００ｍｍ
【００２２】
（プラズマ溶射条件）
電流：７５０Ａ
電圧：３０Ｖ
Ａｒガス圧：０．３８ＭＰａ ( ≒５５ｐｓｉ )
Ｈｅガス圧：０．３５ＭＰａ ( ≒５０ｐｓｉ )
原料フィード量：６ｇ／ｍｉｎ
溶射ガンとステンレス板との距離２００ｍｍ
使用原料粉：アルミニウム粉＋５％マグネシウム合金粉（平均粒径７５μｍ）
溶射時間：アーク溶射３秒＋プラズマ溶射２秒
【００２３】
（比較例１）
次の条件でステンレス板にアーク溶射のみを施した。
（アーク溶射条件）
電流：２０Ａ
電圧：２６０Ｖ
Ａｉｒ圧：０．５５ＭＰａ ( ≒８０ｐｓｉ )
使用ワイヤー：φ１．６ｍｍアルミニウムワイヤー（純度９９．６％）
ワイヤーフィード量：６ｇ／ｍｉｎ
溶射ガンとステンレス板との距離２００ｍｍ
溶射時間：５秒
【００２４】
（比較例２）
（プラズマ溶射条件）
電流：７５０Ａ
電圧：３０Ｖ
Ａｒガス圧：０．３８ＭＰａ ( ≒５５ｐｓｉ )
Ｈｅガス圧：０．３５ＭＰａ ( ≒５０ｐｓｉ )
原料フィード量：６ｇ／ｍｉｎ
溶射ガンとステンレス板との距離２００ｍｍ
使用原料粉：アルミニウム粉＋５％マグネシウム合金粉（平均粒径７５μｍ）
溶射時間：５秒
【００２５】
上記実施例１及び比較例１、２の溶射された面積は直径１５０ｍｍ程度の範囲であった。実施例１及び比較例１、２の表面粗さの測定結果を表１に示す。表面粗さは１０箇所測定した。
表１に示すように、比較例１、２に比べて実施例１のアーク溶射＋プラズマ溶射は、目標とする表面あらさ１０〜２０μｍＲａにコントロールし易く、表面粗さのバラツキも少ない。
【００２６】
【表１】
（実施例２）
直径３００ｍｍ、厚み１０ｍｍの円盤状高純度チタンターゲット側面部分に、実施例１で示したアーク溶射＋プラズマ溶射条件で溶射皮膜を形成した。
但し、溶射ガンとワーク（ターゲット）との距離は約３００ｍｍとし、溶射膜厚さはワーク（ターゲット）の回転数を５０、６０、７０ｒｐｍに変化させることで制御した。
この側面溶射ターゲットをスパッタ装置に装着し、ＴｉＮ膜をリアクティブスパッタによって形成した。ＴｉＮ膜厚が４０μｍになるまでスパッタを行い、付着膜の様子を観察した。
【００２８】
（比較例３）
実施例２と同様に円盤状高純度チタンターゲット側面に、比較例１で示したようにアーク溶射のみで溶射皮膜を形成した。溶射ガンとワーク（ターゲット）との距離は約３００ｍｍとし、溶射膜厚さはワーク（ターゲット）の回転数を５０、６０、７０ｒｐｍに変化させることで制御した。
この側面溶射ターゲットをスパッタ装置に装着し、ＴｉＮ膜をリアクティブスパッタによって形成した。ＴｉＮ膜厚がおよそ４０μｍになるまでスパッタを行い、付着膜の様子を観察した。
【００２９】
（比較例４）
実施例２と同様に円盤状の高純度チタンターゲット側面に、比較例２で示したようにプラズマ溶射のみで溶射皮膜を形成した。溶射ガンとワーク（ターゲット）との距離は約３００ｍｍとし、溶射膜厚さはワーク（ターゲット）の回転数を５０、６０、７０ｒｐｍに変化させることで制御した。
この側面溶射ターゲットをスパッタ装置に装着し、ＴｉＮ膜をリアクティブスパッタによって形成した。ＴｉＮ膜厚がおよそ４０μｍになるまでスパッタを行い、付着膜の様子を観察した。
【００３０】
実施例２及び比較例３、４の結果を表２に示す。実施例２のアーク溶射＋プラズマ溶射法によって皮膜を形成した場合は、ワーク回転数を５０、６０ｒｐｍにしたものは、付着したＴｉＮ膜の剥離は観察されなかったが、溶射皮膜の薄い７０ｒｐｍのものは剥離が発生してしまった。溶射皮膜の膜厚としては２００μｍ程度以上必要であると考えられる。
比較例３のアーク溶射によるものは、表面粗さが大きく、斑のある表面状態であり、斑の部分からＴｉＮ膜の剥離が観察された。
また、比較例４のプラズマ溶射皮膜によるものは、表面粗さが小さくＴｉＮ膜を強固に付着させるだけのアンカー効果が低いものであり、ＴｉＮ膜の剥離が観察された。
【００３３】
【表２】
【００３２】
溶射皮膜の改善を図り、アーク溶射皮膜及びさらにその上にプラズマ溶射皮膜を形成することにより、ターゲット、バッキングプレート、その他のスパッタリング装置内の機器の、不要な膜が堆積する面から発生する該堆積物の剥離・飛散を直接的にかつ効果的に防止できるスパッタリングターゲット又はバッキングプレート及びスパッタリング方法を得ることができるという優れた効果を有する。【Technical field】
[0001]
The present invention relates to a sputtering target or backing plate that generates less particles during film formation and a method for manufacturing the same .
【Technical field】
[0002]
In recent years, a sputtering method capable of easily controlling the film thickness and components has been frequently used as one of film forming methods for materials for electronic and electrical parts.
In this sputtering method, a target composed of a positive electrode and a negative electrode is opposed to each other, and an electric field is generated by applying a high voltage between the substrate and the target in an inert gas atmosphere. Ionized electrons collide with inert gas to form a plasma, and cations in the plasma collide with the target (negative electrode) surface to strike out target constituent atoms, and the surface of the substrate where the ejected atoms face each other This is based on the principle that a film is formed by adhering to the film.
[0003]
When forming a thin film by this sputtering method, the problem of generation of particles has been greatly taken up. For example, when the particles are caused by the target in the sputtering method, when the target is sputtered, the thin film is deposited not only on the substrate but also on the inner wall of the thin film forming apparatus, members on the inside, and the like. Surfaces and side surfaces other than the erosion part of the target are no exception, and it is observed that sputtered particles are deposited.
[0004]
And it is considered that one of the major causes of the generation of particles is that the flakes peeled off from the members or the like in such a thin film forming apparatus are directly scattered and adhered to the substrate surface.
In general, since the side surface of the target does not directly face the plasma, there are few examples that consider the generation of particles from the side surface as a problem. Therefore, there have been many examples in the past where countermeasures have been taken for the center and non-erosion parts of the outer peripheral edge, but the entire surface of the sputtering surface tends to be sputtered in order to improve the efficiency of target use. There is a possibility of increasing particles.
Recently, the degree of integration of LSI semiconductor devices has increased (16M bits, 64M bits, or even 256M bits), while the wiring width has been reduced to 0.25 μm or less. Problems such as wire breaks and short circuits have become more frequent.
[0005]
As described above, the generation of particles has become a more serious problem as the degree of integration and miniaturization of electronic device circuits has progressed.
In general, a sputtering target is joined to a backing plate having a larger dimension by means such as welding, diffusion bonding, or soldering, but the side surface of the sputtering target to be joined to the backing plate is attached to the backing plate for the stability of sputtering. On the other hand, it is formed so as to have an inclined surface that normally spreads toward the end.
As already known, the backing plate has a function of cooling the target with the back surface in contact with the coolant, and a material such as aluminum, copper, or an alloy thereof having good thermal conductivity is used.
The side surface of the sputtering target is not a portion that receives erosion (wear) due to sputtering. However, since it is close to the erosion surface of the target, the sputtered particles flying during the sputtering operation tend to adhere and accumulate more.
In general, the erosion surface of the sputtering target is turned into a smooth surface by lathe processing, and the inclined side surface is similarly turned.
[0006]
However, it has been found that sputtered particles (deposits) once adhered from such an inclined side surface are separated again and float to cause generation of particles.
In addition, it was observed that the deposits peeled more from the place away from the flat erosion surface than from the flat peripheral erosion surface.
Such a phenomenon has not always been clearly grasped, and no particular measures have been taken. However, the generation of particles from such locations has become a major problem due to the demand for higher integration and miniaturization of electronic device circuits as described above.
In order to solve such a problem, a proposal has been made to improve the adhesive force by blasting the side surface of the target and the vicinity of the backing plate and using the anchor effect.
[0007]
However, in this case, there are new problems such as contamination of the product due to residual blasting material, peeling of adhered particles deposited on the residual blasting material, and peeling due to selective and non-uniform growth of the adhered film. It did not result in a fundamental solution.
In particular, even with such blasting, there is a difference in material between the target side surface and the backing plate, a difference in thermal expansion due to this, and a clear step between the materials. Tend to be. In this case, since there is a distance from the erosion portion as described above, there is a problem in that it is not noticed that this causes the generation of particles.
For this reason, the present inventors have previously proposed a sputtering target with less generation of particles having a thermal spray coating having a center line average roughness Ra of 10 to 20 μm on at least the side surface of the sputtering target ( see Patent Document 1 ).
[Patent Document 1]
Japanese Patent Application 2000-314778
[0008]
This technique itself has the effect of preventing the peeling of the adhered film and suppressing the generation of particles as compared with the conventional method. However, arc spraying or plasma spraying was used to form this sprayed coating. However, the former tends to have a surface roughness that is too large, the variation is large, and the adhesion of the deposited film is uneven. The latter was not always satisfactory because the surface roughness was small, the anchor effect was low, and the adhesion with the deposit was poor.
In addition, the problem of the thermal spray coating formed to suppress the generation of such particles is not only the problem of the target side surface, but also the other sputtering target surface, the backing plate, or an unnecessary film of equipment in the sputtering apparatus. There was a similar problem in terms of deposition.
DISCLOSURE OF THE INVENTION
[Problems to be solved by the invention]
[0009]
In view of the above problems, the present invention aims to improve the thermal spray coating and more effectively remove the deposit generated from the surface on which unnecessary films of the target, backing plate and other equipment in the sputtering apparatus are deposited. It is an object of the present invention to obtain a sputtering target that can directly prevent scattering or a sputtering target bonded to a backing plate.
In order to solve the above-mentioned problems, the present inventors have conducted intensive research, and as a result, have obtained knowledge that the generation of particles during film formation can be efficiently suppressed by improving the thermal spray coating process. The present invention is based on this finding,
[0010]
1. Particles characterized by forming an arc sprayed coating having a total thickness of 200 μm or more on the surface on which an unnecessary film of the sputtering target bonded to the sputtering target or backing plate is deposited, and further forming a plasma sprayed coating thereon. Sputtering target joined to a sputtering target or backing plate that generates little.
2. On the surface on which an unnecessary film of the sputtering target bonded to the sputtering target or the backing plate is deposited, an aluminum arc sprayed film having a total film thickness of 200 μm or more and further a magnesium-containing aluminum alloy plasma sprayed film is formed thereon. 2. Sputtering target bonded to a sputtering target or backing plate with less generation of particles. 3. A sputtering target bonded to the sputtering target with a low particle generation or a backing plate according to the above 1 or 2, wherein the thermal spray coating has a center line average roughness Ra of 10 to 20 μm. 4. A sputtering target with a low particle generation or a sputtering target bonded to the backing plate according to any one of the above 1 to 3, which has a thermal spray coating continuously over the side surface of the sputtering target and the surface of the backing plate. 5). The sputtering target with less generation of particles according to any one of the above 1 to 4, further comprising a thermal spray coating from the side surface position slightly away from the sputtering surface of the sputtering target to the backing plate direction or the backing plate surface. Or a sputtering target bonded to a backing plate
6). Particles characterized by forming an arc sprayed coating having a total thickness of 200 μm or more on the surface on which an unnecessary film of the sputtering target bonded to the sputtering target or backing plate is deposited, and further forming a plasma sprayed coating thereon. 6. A method for producing a sputtering target with little generation or a sputtering target bonded to a backing plate 7. A method of producing a sputtering target bonded to a sputtering target with little particle generation or a backing plate according to the above 6, characterized by comprising a thermal spray coating having a center line average roughness Ra of 10 to 20 μm. 8. A method for producing a sputtering target bonded to a sputtering target with little particle generation or a backing plate as described in 6 or 7 above, wherein a sprayed coating is continuously provided over the side surface of the sputtering target and the surface of the backing plate. 9. The sputtering target with less generation of particles according to any one of the above items 6 to 8, wherein the sputtering target is provided with a thermal spray coating from the side surface position slightly away from the sputtering surface of the sputtering target to the backing plate direction or the backing plate surface. Alternatively, a method for manufacturing a sputtering target bonded to a backing plate10 . Production process 11 of a sputtering target bonded to a small sputtering target or backing plate of particle generation according to the use of aluminum or aluminum alloy as a sprayed coating in any one of 6-9, wherein. The sputtering target bonded to a less sputtering target or backing plate of particle generation according to any of the 6-10, characterized in that the formation of the arc spray coating, and further magnesium containing aluminum alloy plasma sprayed coating thereon of aluminum A manufacturing method is provided.
BEST MODE FOR CARRYING OUT THE INVENTION
[0012]
As a method of spraying aluminum or an aluminum alloy, there are arc spraying and plasma spraying. In principle, arc spraying and plasma spraying are the same. Arc spraying uses an arc as a heat source, and plasma spraying involves melting the sprayed material with a plasma jet flame, flying high-temperature molten particles, and colliding and stacking the material surface. This is a method of forming a film.
However, when this arc spraying or plasma spraying was formed on the surface on which the unnecessary film of the sputtering target, backing plate or equipment in the sputtering apparatus was deposited, and the peeling of the film was investigated, it was found that there was a very large difference. It was.
[0013]
When the sprayed coating was formed only by arc spraying, the area of the molten part of aluminum or aluminum alloy was wide, and the peel resistance was a surface state that was worse and worse than expected. As a result of actual sputtering, it was observed that a part of the deposit was peeled off.
On the other hand, when the thermal spray coating was formed only by plasma spraying, the surface roughness was insufficient, the anchor effect was low, the adhesion with the adhesion film during sputtering was lowered, and as a result, the particle reduction effect was low. .
For this reason, as a result of various examinations of the thermal spraying method, by forming an arc sprayed coating and a plasma sprayed coating thereon, a uniform and stable surface with an optimum surface roughness can be obtained. It was found that a sprayed coating could be formed.
[0014]
Generally, plasma spraying has a larger impact energy of molten particles than arc spraying, resulting in flattening of the molten particles and a reduction in surface roughness.
The major difference between the two thermal spraying methods is the heat source temperature and the flying speed of the molten particles. It is said that plasma spraying is about 10,000 ° C. and the flying speed of molten particles is about 700 m / sec, while arc spraying is about 5000 ° C. and about 100 m / sec.
Taking advantage of the functions of plasma spraying and arc spraying, a thermal spray coating having a large surface roughness is first formed on the surface of the material to be coated by arc spraying, and then surface spraying is performed on the surface using plasma spraying. The surface roughness should be optimized to reduce the roughness.
[0015]
This makes it possible to easily obtain uniform and stable surface roughness control. In addition, when the arc spraying is performed after the plasma spraying, the surface roughness becomes excessively large and exceeds the optimum value, which is not preferable.
The thermal spray coating of the present invention can be formed on a surface on which an unnecessary film of a sputtering target, a backing plate, or an apparatus in a sputtering apparatus is deposited. In order to have a suitable anchor effect by this sprayed coating, it is desirable to provide a sprayed coating with a center line average roughness Ra of 10 to 20 μm.
[0016]
This can be easily achieved by performing plasma spraying after the arc spraying. And the outstanding effect that particle generation can be controlled effectively by this is acquired. When the thermal spraying of the present invention is applied to a target, for example, it can be applied to a target having a rectangular shape, a circular shape, or other shapes. In this case, it is also effective to form a sprayed coating on the side surface of the target that is a non-erosion part.
Although the target side surface is often an inclined surface, it can also be applied to a sputtering target having a structure having a vertical surface or a flat surface continuing to these surfaces. The present invention includes all of these.
In particular, the generation of particles from the side surface of the target tends to be overlooked, but the sputtered particles (deposits) once adhered from the inclined side surface of the sputtering target peel off again, which floats and causes particle generation. It is observed.
In addition, rather than the vicinity of the erosion surface around the flat peripheral surface, the separation of the deposits is more frequent from a place away from the flat erosion surface. Therefore, formation of a sprayed film on such a side surface is extremely easy, and there is a merit that particle generation can be effectively suppressed.
[0017]
As a material for the thermal spray coating, a material that is the same as the target material can be used as long as it is a material that can be arc sprayed and plasma sprayed, and other materials can also be used. In this case, the only limitation is that the sputtering thin film on the substrate is preferably a material that is not contaminated.
As described above, since the sprayed coating exhibits an inherent anchor effect, there is no particular limitation as long as the sprayed coating is brittle and the sprayed coating itself does not cause contamination. However, it can be said that it is desirable to use aluminum or an aluminum alloy as the sprayed coating from the viewpoints of obtaining materials and ease of operation and preventing contamination.
For example, Ti, Zr, Hf, Nb, Ta, Mo, W, Al, Cu, alloys containing these as main components, and the like can be used.
[0018]
Moreover, as a backing plate material, the copper, copper alloy type, aluminum, aluminum alloy type etc. which are normally used can be used, and there is no restriction | limiting in particular in these. For the equipment in the sputtering apparatus, it is not necessary to specify the material in particular, and a sprayed coating can be formed on the surface of other materials such as stainless steel.
In the case where the side surface of the sputtering target is an inclined surface, it can be used also for a sputtering target having an inclined surface in which the side surface of the sputtering target bonded to the backing plate spreads toward the backing plate.
In particular, it is desirable that the thermal spray coating of the present invention is formed continuously over the side surface of the sputtering target and the surface of the backing plate.
[0019]
As described above, there is a difference in material between the target side surface and the backing plate, a difference in thermal expansion due to the difference, and there is a clear step between the materials, which causes the generation of particles. By forming a sprayed coating having an anchor effect, particle generation can be effectively prevented.
The continuous sprayed coating may be formed on the backing plate over the entire exposed surface of the target or in the vicinity of the joint with the target. The present invention includes all of these. Naturally, the sprayed coating can be continuously formed over the side surface of the sputtering target, the lower flat surface, and the surface of the backing plate.
【Example】
[0020]
Next, examples and comparative examples of the present invention will be described. In addition, an Example is an example of this invention to the last, and is not restrict | limited to this Example. That is, all modifications and other aspects based on the technical idea of the present invention are included in the present invention.
[0021]
Example 1
The following condition sprayed coating was formed on a stainless steel plate (SUS304).
(Arc spraying conditions)
Current: 20A
Voltage: 260V
Air pressure: 0.55 MPa ( ≈80 psi )
Use wire: φ 1.6mm aluminum wire (purity 99.6%)
Wire feed rate: 6 g / min
200mm distance between spray gun and stainless steel plate
[0022]
(Plasma spraying conditions)
Current: 750A
Voltage: 30V
Ar gas pressure: 0.38 MPa ( ≈55 psi )
He gas pressure: 0.35 MPa ( ≈50 psi )
Raw material feed rate: 6 g / min
200mm distance between spray gun and stainless steel plate
Used raw material powder: Aluminum powder + 5% magnesium alloy powder (average particle size 75 μm)
Thermal spraying time: Arc spraying 3 seconds + Plasma spraying 2 seconds [0023]
(Comparative Example 1)
Only the arc spraying was performed on the stainless steel plate under the following conditions.
(Arc spraying conditions)
Current: 20A
Voltage: 260V
Air pressure: 0.55 MPa ( ≈80 psi )
Use wire: φ 1.6mm aluminum wire (purity 99.6%)
Wire feed rate: 6 g / min
200mm distance between spray gun and stainless steel plate
Thermal spraying time: 5 seconds [0024]
(Comparative Example 2)
(Plasma spraying conditions)
Current: 750A
Voltage: 30V
Ar gas pressure: 0.38 MPa ( ≈55 psi )
He gas pressure: 0.35 MPa ( ≈50 psi )
Raw material feed rate: 6 g / min
200mm distance between spray gun and stainless steel plate
Used raw material powder: Aluminum powder + 5% magnesium alloy powder (average particle size 75 μm)
Thermal spraying time: 5 seconds [0025]
The sprayed areas of Example 1 and Comparative Examples 1 and 2 were in the range of about 150 mm in diameter. Table 1 shows the measurement results of the surface roughness of Example 1 and Comparative Examples 1 and 2. The surface roughness was measured at 10 locations.
As shown in Table 1, compared with Comparative Examples 1 and 2, arc spraying + plasma spraying of Example 1 can be easily controlled to a target surface roughness of 10 to 20 μmRa, and there is little variation in surface roughness.
[0026]
[Table 1]
(Example 2)
A sprayed coating was formed on the side surface portion of a disc-shaped high-purity titanium target having a diameter of 300 mm and a thickness of 10 mm under the conditions of arc spraying + plasma spraying shown in Example 1.
However, the distance between the spray gun and the workpiece (target) was about 300 mm, and the sprayed film thickness was controlled by changing the number of revolutions of the workpiece (target) to 50, 60, and 70 rpm.
This side spray target was mounted on a sputtering apparatus, and a TiN film was formed by reactive sputtering. Sputtering was performed until the TiN film thickness reached 40 μm, and the appearance of the adhered film was observed.
[0028]
(Comparative Example 3)
As in Example 2, a sprayed coating was formed on the side surface of the disk-shaped high-purity titanium target only by arc spraying as shown in Comparative Example 1. The distance between the spray gun and the workpiece (target) was about 300 mm, and the sprayed film thickness was controlled by changing the rotation speed of the workpiece (target) to 50, 60, and 70 rpm.
This side spray target was mounted on a sputtering apparatus, and a TiN film was formed by reactive sputtering. Sputtering was performed until the TiN film thickness reached approximately 40 μm, and the appearance of the adhered film was observed.
[0029]
(Comparative Example 4)
As in Example 2, a sprayed coating was formed on the side surface of a disk-shaped high-purity titanium target only by plasma spraying as shown in Comparative Example 2. The distance between the spray gun and the workpiece (target) was about 300 mm, and the sprayed film thickness was controlled by changing the rotation speed of the workpiece (target) to 50, 60, and 70 rpm.
This side spray target was mounted on a sputtering apparatus, and a TiN film was formed by reactive sputtering. Sputtering was performed until the TiN film thickness reached approximately 40 μm, and the appearance of the adhered film was observed.
[0030]
The results of Example 2 and Comparative Examples 3 and 4 are shown in Table 2. When the coating was formed by the arc spraying + plasma spraying method of Example 2, peeling of the adhered TiN film was not observed when the workpiece rotation speed was 50, 60 rpm, but the spray coating was thin with 70 rpm. Peeling occurred. The film thickness of the thermal spray coating is considered to be about 200 μm or more.
The comparative example 3 produced by arc spraying had a large surface roughness and a mottled surface state, and peeling of the TiN film was observed from the mottled portion.
In addition, the plasma sprayed coating of Comparative Example 4 has a small surface roughness and a low anchor effect that allows the TiN film to adhere firmly, and peeling of the TiN film was observed.
[0033]
[Table 2]
[0032]
The deposition generated from the surface of the target, backing plate, and other devices in the sputtering apparatus where unnecessary films are deposited by improving the thermal spray coating and forming an arc spray coating and further a plasma spray coating thereon. It has the outstanding effect that the sputtering target or backing plate and sputtering method which can prevent the peeling and scattering of an object directly and effectively are obtained.
Claims (11)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000350475 | 2000-11-17 | ||
| JP2000350475 | 2000-11-17 | ||
| PCT/JP2001/004297 WO2002040733A1 (en) | 2000-11-17 | 2001-05-23 | Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2002040733A1 JPWO2002040733A1 (en) | 2004-03-25 |
| JP3895277B2 true JP3895277B2 (en) | 2007-03-22 |
Family
ID=18823699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002543041A Expired - Lifetime JP3895277B2 (en) | 2000-11-17 | 2001-05-23 | Sputtering target bonded to a sputtering target or backing plate with less generation of particles, and method of manufacturing the same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6858116B2 (en) |
| EP (1) | EP1312695B1 (en) |
| JP (1) | JP3895277B2 (en) |
| KR (1) | KR100631275B1 (en) |
| DE (1) | DE60139406D1 (en) |
| TW (1) | TWI249581B (en) |
| WO (1) | WO2002040733A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190040103A (en) | 2014-09-30 | 2019-04-16 | 가부시끼가이샤 도시바 | Sputtering target structure |
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| CN100396812C (en) * | 2001-12-19 | 2008-06-25 | 日矿金属株式会社 | Method for connecting magnetic substance target to backing plate, and magnetic substance target |
| JP2004165655A (en) * | 2002-10-25 | 2004-06-10 | Semiconductor Energy Lab Co Ltd | Sputtering system and method of manufacturing thin film |
| US20040084305A1 (en) * | 2002-10-25 | 2004-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering system and manufacturing method of thin film |
| JP4422975B2 (en) * | 2003-04-03 | 2010-03-03 | 株式会社コベルコ科研 | Sputtering target and manufacturing method thereof |
| US7297247B2 (en) * | 2003-05-06 | 2007-11-20 | Applied Materials, Inc. | Electroformed sputtering target |
| JP4502622B2 (en) * | 2003-10-22 | 2010-07-14 | 九州電力株式会社 | Thermal spraying method |
| US7682667B2 (en) | 2003-10-22 | 2010-03-23 | Nishinippon Plant Engineering And Construction Co., Ltd. | Method of thermal spraying |
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| JP4331727B2 (en) * | 2003-12-25 | 2009-09-16 | 日鉱金属株式会社 | Joining method and apparatus |
| US7670436B2 (en) | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
| CN101065511A (en) * | 2004-11-17 | 2007-10-31 | 日矿金属株式会社 | Sputtering target, sputtering target backing plate assembly and film deposition system |
| JP4894158B2 (en) * | 2005-04-20 | 2012-03-14 | 東ソー株式会社 | Vacuum equipment parts |
| US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
| US7857947B2 (en) * | 2005-07-27 | 2010-12-28 | Applied Materials, Inc. | Unique passivation technique for a CVD blocker plate to prevent particle formation |
| US7554052B2 (en) * | 2005-07-29 | 2009-06-30 | Applied Materials, Inc. | Method and apparatus for the application of twin wire arc spray coatings |
| US7762114B2 (en) * | 2005-09-09 | 2010-07-27 | Applied Materials, Inc. | Flow-formed chamber component having a textured surface |
| US9127362B2 (en) * | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US20070125646A1 (en) * | 2005-11-25 | 2007-06-07 | Applied Materials, Inc. | Sputtering target for titanium sputtering chamber |
| JP4910465B2 (en) * | 2006-04-18 | 2012-04-04 | 東ソー株式会社 | Vacuum device member, manufacturing method thereof, and vacuum device |
| US20070283884A1 (en) * | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
| KR101040076B1 (en) * | 2006-06-29 | 2011-06-09 | Jx닛코 닛세끼 킨조쿠 가부시키가이샤 | Sputtering target/backing plate conjunction element |
| JP5215192B2 (en) * | 2007-01-05 | 2013-06-19 | 株式会社東芝 | Sputtering target |
| US7981262B2 (en) * | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
| US9677170B2 (en) * | 2007-02-09 | 2017-06-13 | Jx Nippon Mining & Metals Corporation | Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for producing the same |
| US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
| US8968536B2 (en) * | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
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| US7901552B2 (en) * | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
| MX2010004438A (en) * | 2007-11-01 | 2010-05-05 | Sumitomo Metal Ind | Piercing plug, method for regenerating piercing plug, and regeneration facility line for piercing plug. |
| US20100089744A1 (en) * | 2008-10-10 | 2010-04-15 | Chia-Liang Chueh | Method for Improving Adhesion of Films to Process Kits |
| SG189977A1 (en) | 2010-10-27 | 2013-06-28 | Jx Nippon Mining & Metals Corp | Sputtering target backing plate assembly and method for producing same |
| JP6116632B2 (en) * | 2015-08-28 | 2017-04-19 | 三菱マテリアル株式会社 | Silicon target material for sputtering and method of forming a crack prevention layer on the target material |
| US10655212B2 (en) | 2016-12-15 | 2020-05-19 | Honeywell Internatonal Inc | Sputter trap having multimodal particle size distribution |
| US11584985B2 (en) * | 2018-08-13 | 2023-02-21 | Honeywell International Inc. | Sputter trap having a thin high purity coating layer and method of making the same |
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| JPH0774436B2 (en) * | 1990-09-20 | 1995-08-09 | 富士通株式会社 | Thin film formation method |
| JP2642556B2 (en) | 1992-02-05 | 1997-08-20 | 新日本製鐵株式会社 | Thermal spray coating formation method |
| US5965278A (en) * | 1993-04-02 | 1999-10-12 | Ppg Industries Ohio, Inc. | Method of making cathode targets comprising silicon |
| JPH09272965A (en) * | 1996-04-09 | 1997-10-21 | Toshiba Corp | Parts for vacuum film forming device, vacuum film forming device using the same, target and backing plate |
| US6030514A (en) * | 1997-05-02 | 2000-02-29 | Sony Corporation | Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor |
| JPH11236663A (en) | 1998-02-25 | 1999-08-31 | Seiko Epson Corp | Sputtering target, sputtering system and sputtering method |
| JP3791829B2 (en) * | 2000-08-25 | 2006-06-28 | 株式会社日鉱マテリアルズ | Sputtering target with less generation of particles |
-
2001
- 2001-05-23 WO PCT/JP2001/004297 patent/WO2002040733A1/en not_active Application Discontinuation
- 2001-05-23 KR KR1020037006646A patent/KR100631275B1/en active IP Right Grant
- 2001-05-23 DE DE60139406T patent/DE60139406D1/en not_active Expired - Lifetime
- 2001-05-23 JP JP2002543041A patent/JP3895277B2/en not_active Expired - Lifetime
- 2001-05-23 EP EP01934313A patent/EP1312695B1/en not_active Expired - Lifetime
- 2001-05-23 US US10/297,232 patent/US6858116B2/en not_active Expired - Lifetime
- 2001-10-23 TW TW090126159A patent/TWI249581B/en not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190040103A (en) | 2014-09-30 | 2019-04-16 | 가부시끼가이샤 도시바 | Sputtering target structure |
| KR20190040104A (en) | 2014-09-30 | 2019-04-16 | 가부시끼가이샤 도시바 | Electronic components manufacturing method |
| KR20190040377A (en) | 2014-09-30 | 2019-04-17 | 가부시끼가이샤 도시바 | Sputtering target structure manufacturing method |
| KR20200128593A (en) | 2014-09-30 | 2020-11-13 | 가부시끼가이샤 도시바 | Sputtering target structure manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030051835A (en) | 2003-06-25 |
| EP1312695B1 (en) | 2009-07-29 |
| EP1312695A4 (en) | 2005-11-09 |
| JPWO2002040733A1 (en) | 2004-03-25 |
| KR100631275B1 (en) | 2006-10-02 |
| EP1312695A1 (en) | 2003-05-21 |
| DE60139406D1 (en) | 2009-09-10 |
| WO2002040733A1 (en) | 2002-05-23 |
| US6858116B2 (en) | 2005-02-22 |
| US20030116425A1 (en) | 2003-06-26 |
| TWI249581B (en) | 2006-02-21 |
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