JP3878305B2 - Zn alloy for high temperature soldering - Google Patents
Zn alloy for high temperature soldering Download PDFInfo
- Publication number
- JP3878305B2 JP3878305B2 JP33442797A JP33442797A JP3878305B2 JP 3878305 B2 JP3878305 B2 JP 3878305B2 JP 33442797 A JP33442797 A JP 33442797A JP 33442797 A JP33442797 A JP 33442797A JP 3878305 B2 JP3878305 B2 JP 3878305B2
- Authority
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- Japan
- Prior art keywords
- alloy
- weight
- melting point
- solder alloy
- soldering
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【0001】
【発明の属する技術分野】
本発明は、電子部品や機械部品の組立などにおける高温はんだ付用に好適なZn合金に関する。
【0002】
【従来の技術】
パワートランジスタ素子のダイボンディングを始めとする各種電子部品の組立工程におけるはんだ付では高温はんだ付が行われ、比較的高温の300℃前後の融点を有するはんだ合金(以下、単に「はんだ合金」という)が用いられている。このはんだ合金には、Pb−5重量%Sn合金に代表されるPb合金(Pb系はんだ合金)が従来より用いられている。
【0003】
近年、環境汚染に対する配慮からPbの使用を制限する動きが強くなってきている。こうした動きに対応して電子組立の分野においても、Pbを含まないはんだ合金が求められている。
【0004】
しかしながら、従来のPb系はんだ合金を代替できるはんだ合金はまだ提案されていない。
【0005】
【発明が解決しようとする課題】
本発明の目的は、上記事情に鑑み、上記Pb系はんだ合金を代替できるはんだ合金を提供することにある。
【0006】
【課題を解決するための手段】
本発明者は、上記課題を解決すべく、下記(1)、(2)の点にまず着目し、Zn−Al−Mg系3元共晶合金は、Pb−5重量%Sn合金と比べると融点がまだ高いが、Zn−Al−Mg系3元共晶合金を基本とする合金は、上記Pb系はんだ合金を代替できるはんだ合金になり得ると考えた。
【0007】
(1)Pb−5重量%Sn合金は、固相線温度と液相線温度がそれぞれ305℃、315℃である。
【0008】
(2)Zn−Al−Mg系3元共晶合金は、共晶温度が340℃付近にあるといわれている。
【0009】
そして、さらに研究を鋭意行った結果、Zn−Al−Mg系3元共晶の融点を適当にさらに下げるためには、該共晶にGaを添加することが有効であることを見出だし、本発明に到達した。
【0010】
すなわち、本発明は、Alを1〜7重量%、Mgを0.5〜6重量%、およびGaを0.1〜20重量%含み、残部がZnおよび不可避不純物からなるはんだ合金(Zn系はんだ合金)である。
【0011】
【発明の実施の形態】
本発明のZn系はんだ合金において、Al含有量を1〜7重量%、Mg含有量を0.5〜6重量%としたのは、これらの組成範囲を外れると、合金の融点が高くなりすぎるためである。上記組成範囲内では、Al含有量を3〜4重量%、Mg含有量を2.5〜3重量%とするのがさらに好ましい。それは、Zn−Al−Mg系3元共晶組成あるいはそれに近い組成となるからである。
【0012】
Gaは、Zn−Al−Mg系3元合金の融点を下げる元素である。Ga含有量は、0.1重量%未満では上記融点低下効果が小さすぎるので、0.1重量%以上、さらに好ましくは2重量%以上である。一方、20重量%を超えると融点が低くなりすぎてはんだ合金として不適当になるので、20重量%以下、さらに好ましくは13重量%以下である。
【0013】
Zn−Al−Mg共晶合金の融点を下げるには、例えばSnも有効である。しかし、Snを添加すると、Znとの共晶反応により200℃付近で液相が出現するので、高温はんだ付用としては低すぎてしまう。これに対してGaを0.1〜20重量%添加すると、融点が適度に低下し、より好適な組成範囲では265〜320℃程度に固相線温度を下げることができる。このように過度に融点が低下しないのは、GaがMgと反応して化合物を生成し、Zn−Al−Mg系3元共晶中にその化合物が取り込まれるためであると考えられる。
【0014】
本発明のZn系はんだ合金は、ビッカース硬度100ぐらいの高い硬度を有するために、加工性は劣る。従って、200℃程度で熱間成形してはんだ合金材とするか、粉末にした後でペースト状のはんだ合金材とするのがよい。
【0015】
【実施例】
[実施例1〜11、比較例1]
Zn地金、Al地金、Mg地金および金属Ga(以上の原料は、いずれも純度99.9重量%)を用い、大気溶解炉によりZn合金を溶製した。溶製したZn合金を化学分析し、その結果を表1に示す。
【0016】
上記溶製したZn合金について、融点を測定し、濡れ性を評価した。融点の測定は、マック・サイエンス(MAC SCIENCE)社製熱分析装置(DSC3100型)を用い、昇温・降温速度を10℃/分として行った。また、濡れ性の評価は、次の(1)、(2)、(3)のようにして行った。
【0017】
(1)上記融点測定で得た各液相線温度より20℃高い温度に窒素気流中で保持するZn合金浴を調製する。
【0018】
(2)Agめっきを施した銅片を上記浴中に5秒間浸漬した後、該銅片を取り出し観察する。
【0019】
(3)取り出した銅片のAgめっき面にZn合金融液が濡れ広がった場合に「良」と、濡れ広がらなかった場合に「不良」と評価する。
【0020】
上記測定・評価の結果を表1に示す。
【0021】
【表1】
【0022】
表1より、実施例のZn合金は、Gaの添加によって融点が適度に低下しており、より好適な組成範囲では、265〜320℃の固相線温度を有するとともに、濡れ性にも問題がないので、電子部品や機械部品の組立における高温はんだ付用に好適であることがわかる。
【0023】
【発明の効果】
本発明により、従来のPb系はんだ合金を代替できるはんだ合金を提供することができる。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a Zn alloy suitable for high-temperature soldering in assembly of electronic parts and mechanical parts.
[0002]
[Prior art]
Soldering in the assembly process of various electronic components including die bonding of power transistor elements is performed by high-temperature soldering, and a solder alloy having a relatively high melting point of about 300 ° C. (hereinafter simply referred to as “solder alloy”). Is used. As this solder alloy, a Pb alloy (Pb solder alloy) represented by a Pb-5 wt% Sn alloy has been used conventionally.
[0003]
In recent years, there has been a strong movement to restrict the use of Pb due to consideration for environmental pollution. Corresponding to such a movement, a solder alloy containing no Pb is also required in the field of electronic assembly.
[0004]
However, a solder alloy that can replace the conventional Pb solder alloy has not been proposed yet.
[0005]
[Problems to be solved by the invention]
In view of the above circumstances, an object of the present invention is to provide a solder alloy that can replace the Pb-based solder alloy.
[0006]
[Means for Solving the Problems]
In order to solve the above problems, the present inventor first pays attention to the following points (1) and (2), and the Zn—Al—Mg ternary eutectic alloy is compared with the Pb-5 wt% Sn alloy. Although the melting point is still high, it was considered that an alloy based on a Zn—Al—Mg ternary eutectic alloy can be a solder alloy that can replace the Pb solder alloy.
[0007]
(1) The Pb-5 wt% Sn alloy has a solidus temperature and a liquidus temperature of 305 ° C. and 315 ° C., respectively.
[0008]
(2) The Zn—Al—Mg ternary eutectic alloy is said to have a eutectic temperature in the vicinity of 340 ° C.
[0009]
As a result of further research, it has been found that it is effective to add Ga to the eutectic to appropriately lower the melting point of the Zn—Al—Mg ternary eutectic. The invention has been reached.
[0010]
That is, the present invention relates to a solder alloy (Zn-based solder) containing 1 to 7% by weight of Al, 0.5 to 6% by weight of Mg, and 0.1 to 20% by weight of Ga, with the balance being Zn and inevitable impurities. Alloy).
[0011]
DETAILED DESCRIPTION OF THE INVENTION
In the Zn-based solder alloy of the present invention, the Al content is set to 1 to 7% by weight, and the Mg content is set to 0.5 to 6% by weight. Because. Within the above composition range, it is more preferable that the Al content is 3 to 4% by weight and the Mg content is 2.5 to 3% by weight. This is because the Zn—Al—Mg ternary eutectic composition or a composition close thereto is obtained.
[0012]
Ga is an element that lowers the melting point of the Zn—Al—Mg ternary alloy. If the Ga content is less than 0.1% by weight, the melting point lowering effect is too small, so it is 0.1% by weight or more, more preferably 2% by weight or more. On the other hand, if it exceeds 20% by weight, the melting point becomes too low and becomes unsuitable as a solder alloy.
[0013]
For example, Sn is also effective for lowering the melting point of the Zn—Al—Mg eutectic alloy. However, when Sn is added, a liquid phase appears at around 200 ° C. due to a eutectic reaction with Zn, so that it is too low for high-temperature soldering. On the other hand, when Ga is added in an amount of 0.1 to 20% by weight, the melting point is appropriately lowered, and the solidus temperature can be lowered to about 265 to 320 ° C. in a more preferable composition range. The reason why the melting point does not decrease excessively in this way is considered to be that Ga reacts with Mg to form a compound, and the compound is taken into the Zn—Al—Mg ternary eutectic.
[0014]
Since the Zn-based solder alloy of the present invention has a high Vickers hardness of about 100, workability is inferior. Therefore, it is preferable to form a solder alloy material by hot forming at about 200 ° C., or to make a paste solder alloy material after powdering.
[0015]
【Example】
[Examples 1 to 11, Comparative Example 1]
Zn alloy, Al metal, Mg metal and metal Ga (the above raw materials are all 99.9% by weight in purity) were used to melt a Zn alloy in an atmospheric melting furnace. The molten Zn alloy was chemically analyzed, and the results are shown in Table 1.
[0016]
The melting point of the melted Zn alloy was measured to evaluate the wettability. The melting point was measured using a thermal analyzer (DSC3100 type) manufactured by MAC SCIENCE, with a temperature increase / decrease rate of 10 ° C./min. The wettability was evaluated as follows (1), (2), and (3).
[0017]
(1) A Zn alloy bath is prepared that is held in a nitrogen stream at a temperature 20 ° C. higher than each liquidus temperature obtained by the melting point measurement.
[0018]
(2) After immersing the copper piece subjected to Ag plating in the bath for 5 seconds, the copper piece is taken out and observed.
[0019]
(3) When the Zn compound financial liquid wets and spreads on the Ag plating surface of the copper piece taken out, it is evaluated as “good”, and when it does not spread out, it is evaluated as “bad”.
[0020]
The results of the measurement / evaluation are shown in Table 1.
[0021]
[Table 1]
[0022]
As shown in Table 1, the melting point of the Zn alloy of the examples is moderately decreased by the addition of Ga. In a more preferable composition range, the alloy has a solidus temperature of 265 to 320 ° C. and also has a problem with wettability. Therefore, it can be seen that it is suitable for high-temperature soldering in the assembly of electronic parts and machine parts.
[0023]
【The invention's effect】
The present invention can provide a solder alloy that can replace a conventional Pb solder alloy.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33442797A JP3878305B2 (en) | 1997-12-04 | 1997-12-04 | Zn alloy for high temperature soldering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33442797A JP3878305B2 (en) | 1997-12-04 | 1997-12-04 | Zn alloy for high temperature soldering |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH11172352A JPH11172352A (en) | 1999-06-29 |
JP3878305B2 true JP3878305B2 (en) | 2007-02-07 |
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Application Number | Title | Priority Date | Filing Date |
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JP33442797A Expired - Lifetime JP3878305B2 (en) | 1997-12-04 | 1997-12-04 | Zn alloy for high temperature soldering |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2002227489A1 (en) * | 2000-07-31 | 2002-02-13 | Honeywell International Inc. | Lead-free alloys with improved wetting properties |
JP3878978B2 (en) | 2002-10-24 | 2007-02-07 | コーア株式会社 | Lead-free solder and lead-free fittings |
JP2005026188A (en) | 2003-07-03 | 2005-01-27 | Koa Corp | Current fuse and manufacturing method of current fuse |
JP2007207558A (en) * | 2006-02-01 | 2007-08-16 | Nec Schott Components Corp | Fusible alloy type thermal fuse and circuit protection element |
JP5160201B2 (en) | 2007-11-20 | 2013-03-13 | 株式会社豊田中央研究所 | Solder material and manufacturing method thereof, joined body and manufacturing method thereof, power semiconductor module and manufacturing method thereof |
JP2010179336A (en) | 2009-02-05 | 2010-08-19 | Toyota Central R&D Labs Inc | Joint product, semiconductor module, and method for manufacturing the joint product |
JP5578326B2 (en) | 2011-03-29 | 2014-08-27 | 日立金属株式会社 | Lead component, manufacturing method thereof, and semiconductor package |
CN102632347B (en) * | 2012-01-09 | 2014-07-02 | 西安交通大学 | Aluminium matrix composite, brazing filler metal for aluminium alloy and brazing method |
US9520347B2 (en) | 2013-05-03 | 2016-12-13 | Honeywell International Inc. | Lead frame construct for lead-free solder connections |
CN103231180B (en) * | 2013-05-15 | 2015-04-22 | 郑州机械研究所 | Production method for aluminum alloy low-temperature brazing solder |
KR20160121562A (en) | 2014-02-20 | 2016-10-19 | 허니웰 인터내셔날 인코포레이티드 | Lead-free solder compositions |
CN111545948B (en) * | 2020-05-18 | 2021-12-07 | 河南机电职业学院 | Brazing alloy, brazing filler metal, preparation method and application of brazing filler metal and prepared brazing product |
-
1997
- 1997-12-04 JP JP33442797A patent/JP3878305B2/en not_active Expired - Lifetime
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Publication number | Publication date |
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JPH11172352A (en) | 1999-06-29 |
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