JP3871587B2 - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device Download PDF

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JP3871587B2
JP3871587B2 JP2002073394A JP2002073394A JP3871587B2 JP 3871587 B2 JP3871587 B2 JP 3871587B2 JP 2002073394 A JP2002073394 A JP 2002073394A JP 2002073394 A JP2002073394 A JP 2002073394A JP 3871587 B2 JP3871587 B2 JP 3871587B2
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resin
heat sink
semiconductor element
semiconductor device
coining
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JP2003273307A (en
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和洋 中村
英美 村山
篤 落谷
康友 赤澤
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日本インター株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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Description

【０００１】
【発明の属する技術分野】
本発明は、樹脂封止型半導体装置に関し、特に半導体素子が搭載・固着される放熱板の構造に関するものである。
【０００２】
【従来の技術】
図８（ａ），（ｂ）に従来のこの種の樹脂封止型半導体装置の構造例を示す。すなわち、図８は特公平７−４４２４７号公報に示されたもので、樹脂封止型半導体装置１は、放熱板２の上面に当たる半導体素子搭載部３上に半導体素子４が半田５により固着され、半導体素子１と外部リード６ａとが内部リード１２を介して電気的に導通され、半導体素子１と外部リード６ａの一部及び放熱板２から延在させた外部リード６ｂの一部が樹脂封止されて、樹脂モールド部７が形成された半導体装置である。
【０００３】
上記の構造例では、放熱板２が樹脂モールド部７に組み込まれている部分とそうでない部分の境界領域であって、その長手方向より見て横方向の両側に、放熱板２の側面の一部をコ字状に切り欠いて形成した互いに対向する一対のノッチ９と、このノッチ９間を結ぶ少なくとも１条の溝１０を有している。
さらに、上記の構造例では樹脂モールド部７との結合を容易にするために半導体素子搭載部３の外周縁に外方に向かって張り出すリブ８を備えている。
【０００４】
【発明が解決しようとする課題】
従来の樹脂封止型半導体装置は上記のように構成されているので、以下のような解決すべき課題があった。
（１）放熱板２の先端部のタブ１４に形成したねじ取付孔９を利用して樹脂封止型半導体装置１を回路基板等の外部部材に取り付ける場合に、半導体素子掲載部３上に半田固着された半導体素子４に加わる機械的応力を、前記溝１０及びノッチ９により緩和するようにしている。
しかるに、ノッチ９は、放熱板２の端縁を切り欠いて形成するため、一対のノッチ９の占める面積分だけ放熱板２の有効面積が減少し、半導体素子４の機能時に発生する熱の放熱効率を少なからず妨げる結果となっている。
【０００５】
（２）樹脂モールド部７と放熱板２との機械的結合は、放熱板２の外周縁に設けたリブ８とともに、ノッチ９と該ノッチ９間を結ぶ溝１０により強化している。
しかし、前記ノッチ９は、放熱板２が樹脂モールド部７に組み込まれている部分とそうでない部分の境界領域にのみ設けられ、また、溝１０の長さもノッチ９間を結ぶ長さに限定されるため、相対的にその距離が短くなり、樹脂モールド部７と放熱板２との十分な機械的結合を得るには未だ十分な対策となっていない。
【０００６】
（３）上記（２）により機械的結合が未だ不十分なところがあるために、樹脂モールド部７と放熱板２との接着不十分な境界から水分が浸入し、半導体素子４の耐湿特性を劣化させるおそれがある。
【０００７】
本発明は、上記の各課題を解決するためになされたもので、▲１▼ノッチを設けることなく、機械的応力及び熱的応力を緩和しつつ、放熱板の占める面積を有効に使用し、半導体素子の機能時に発生する熱の放熱効率を向上させること、▲２▼樹脂モールド部と放熱板との機械的結合をより一層強固なものにすること、▲３▼樹脂モールド部と放熱板との接着性を向上させ、半導体素子の耐湿特性を良好なものとすること、等を目的とした樹脂封止型半導体装置を提供するものである。
【０００８】
【課題を解決するための手段】
請求項１に記載の発明によれば、放熱板の半導体素子搭載部上に半導体素子が固着され、前記半導体素子と第１の外部リードとが内部リードを介して電気的に導通され、前記半導体素子と前記第１の外部リードの一部と前記放熱板から延びている第２の外部リードの一部とが樹脂封止されて樹脂モールド部が形成された樹脂封止型半導体装置であって、前記放熱板の外周縁部に第１の突き出し部と、第２の突き出し部とを設けると共に、前記第１の突き出し部の上面が前記放熱板の上面よりも低くなるように、かつ、前記第２の突き出し部の上面が前記第１の突き出し部の上面よりも低くなるように、かつ、前記第２の突き出し部の上面の面積が前記第１の突き出し部の上面の面積よりも小さくなるように、前記第１の突き出し部および前記第２の突き出し部を形成し、更に、２つの第２の突き出し部の間に跨る少なくとも１条の溝を設けたことを特徴とする樹脂封止型半導体装置が提供される。
【００１０】
請求項１に記載の樹脂封止型半導体装置では、放熱板の外周縁部に、第１の突き出し部と、第２の突き出し部とを備え、かつ、２つの第２の突き出し部の間に跨る少なくとも１条の溝を設けたので、樹脂封止型半導体装置を外部部材にねじ止めする際に加わる機械的応力及び熱的応力を緩和しつつ、半導体素子の機能時に発生する熱を放熱するための有効面積を損ねることなく放熱面積を十分確保することができる。
【００１１】
特に、２つの第２の突き出し部の間に跨る少なくとも１条の溝を設けたので、樹脂封止型半導体装置を放熱板の先端部のタブに設けた取付孔を介して外部部材にねじ止めする場合に、外部部材あるいは放熱板の取付孔周縁の平坦度に問題があったとしても該溝により機械的応力を吸収し、半導体素子に悪影響を与えることがなくなる。
【００１２】
詳細には、請求項１に記載の樹脂封止型半導体装置では、第２の突き出し部の上面を、第１の突き出し部の上面よりも相対的に低くしたので、第２の突き出し部の上面の高さと第１の突き出し部の上面の高さとを等しくするものに比較して封止樹脂との接着面積が増加し、樹脂と金属製の放熱板との機械的結合強化が図られる。
【００１３】
【実施例】
以下に、本発明の実施例を、図を参照して説明する。
図１は本発明の第１の実施例を示し、同図（ａ）は樹脂封止型半導体装置の一部を示す平面図、同図（ｂ）はその側面図である。
これらの図において、本発明の樹脂封止型半導体装置２１は、従来構造と同様に、一連のリードフレームから形成された放熱板２の半導体素子搭載部３上に、半導体素子４が半田５により固着され、半導体素子４と外部リード６ａとが内部リード１２により電気的に導通されている。また、前記半導体素子４と外部リード６ａ及び放熱板２から延在させた中央の外部リード６ｂの一部が樹脂封止され樹脂モールド部７を形成している。
【００１４】
そして、放熱板２の外周縁部に、第１の突き出し部２２（以下、第１のコイニング部という。）と、第２の突き出し部２３（以下、第２のコイニング部という。）とが設けられ、第２のコイニング部２３の上面が第１のコイニング部２２の上面よりも低くなるように、第１のコイニング部２２および第２のコイニング部２３が形成されている。これら第１のコイニング部２２及び第２のコイニング部２３の形状は特に限定されないが、例えば図２（ａ），（ｂ）に示すように放熱板２の外周縁部から外方に向かって烏口状に突き出す形状となっている。なお、図２（ａ）は図１（ａ）におけるＸ−Ｘ線に沿う断面図、図２（ｂ）は図１（ａ）におけるＹ−Ｙ線に沿う断面図である。
【００１５】
さらに、第２のコイニング部２３（図１では左右一対）に跨る少なくとも１条の溝２４が設けられている。この溝２４の条数についても限定されるものではなく、また、第２のコイニング部２３への掛かり方も種々の方法があり、例えば図３（ａ），（ｂ），（ｃ）等の掛かり方、乃至は跨り方がある。勿論、これらについても特に限定されるものではない。
【００１６】
また、溝２４の形状についても、例えば、図４（ａ）〜（ｄ）に示すようにコ字状溝（ａ）、Ｖ字状溝（ｂ）、Ｕ字状溝（ｃ）、２段溝（ｄ）等、種々の形状が考えられる。さらに、図５は溝２４の種々の平面配置形状を示し、（ａ）は両端の第２のコイニング部２３に対してクランク状に折れ曲がった形状のもの、（ｂ）は円弧状になったもの、（ｃ）は前縁部に対しても設けた第２のコイニング部２３と側縁部に設けた第２のコイニング部２３の間を斜めに繋ぐ形状のもの、（ｄ）は、（ｃ）と同様に配置した第２のコイニング２３の間をＬ字状の溝２４で繋いだものを示している。しかし、この溝２４の平面配置形状についても特に限定されるものではない。
【００１７】
次に、図６に本発明の第２の実施例を示す。このこの実施例では、図示のように、第２のコイニング部２３を、第１のコイニング部２２の長手方向両端に隣接して合計４箇所設け、かつ、幅方向で互いに対向する第２のコイニング部２３の間を跨ぐように深さの異なる２段型の溝２４を形成したものである。この溝２４は、図６（ｂ）のＡ部拡大図として図７に示すように、深さが相対的に浅く口幅の広い第１段の口縁溝２５と、相対的に底の深い第２段の円弧溝２６とが一連なるように設けられている。
【００１８】
なお、上記第１のコイニング部２２と第２のコイニング部２３の具体的寸法例を示せば次の通りである。図７において、ｔ１＝１．３ｍｍ、ｔ２＝０．６５ｍｍ、ｔ３＝０．３ｍｍである。この寸法例で分かるように、第１のコイニング部２２の深さｔ３は、放熱板２の板厚ｔ１の約１／４程度であり、また、第２のコイニング部２３の深さｔ２は、放熱板２の板厚ｔ１の約１／２程度であるが、これらの深さについては第１のコイニング部２２および第２のコイニング部２３の長さや形成するコイニング部の数等により適宜設計されるものである。
【００１９】
【発明の効果】
本発明は、以上のように構成したので概略以下のような効果を奏する。
（１）第１及び第２のコイニング部と、２つの第２のコイニング部の間に跨る溝の形成による相乗効果によって、ねじ取付孔を利用して樹脂封止型半導体装置を回路基板等の外部部材に取り付ける場合に、あるいは、半田等を利用して樹脂封止型半導体装置を回路基板等の外部部材に面付けする場合に、半導体素子に加わる機械的応力及び半導体素子の機能時の熱的応力を緩和することができる。
（２）従来構造のように放熱板の端縁の一部切り欠いて形成したノッチを有することなく、外方に向かって突き出し形状のコイニング部を形成するようにしたので、放熱板としての有効面積を効果的に使用することができ、半導体素子の機能時に発生する熱の放熱効率を向上させることができる。
（３）上面の高さの異なる第１のコイニング部と第２のコイニング部を設け、しかも２つの第２のコイニング部の間を跨ぐ溝を形成したので、接着面積が増加し、樹脂モールド部と放熱板との機械的結合をより一層強固なものにすることができる。
（４）上記（３）より樹脂モールド部と放熱板との接着性を向上させる結果、半導体素子の耐湿特性を良好なものとすることができる。
【図面の簡単な説明】
【図１】本発明の第１の実施例である樹脂封止型半導体装置を示し、（ａ）はその平面図、（ｂ）はその側面図である。
【図２】（ａ）は、図１（ａ）におけるＸ−Ｘ線に沿う拡大断面図、（ｂ）は、図１（ａ）におけるＹ−Ｙ線に沿う拡大断面図である。
【図３】（ａ），（ｂ），（ｃ）は、それぞれ第２のコイニング部に跨る溝の跨り方の例を示す斜視図である。
【図４】（ａ），（ｂ），（ｃ），（ｄ）は、それぞれ上記溝の断面形状の例を示す断面図である。
【図５】（ａ），（ｂ），（ｃ），（ｄ）は、それぞれ上記溝の平面形状の例を示す平面図である。
【図６】本発明の第２の実施例である樹脂封止型半導体装置を示し、（ａ）はその平面図、（ｂ）はその側面図である。
【図７】図６（ｂ）におけるＡ部拡大図である。
【図８】従来のこの種の樹脂封止型半導体装置の構造例を示し、（ａ）はその平面図、（ｂ）はその側面図である。
【符号の説明】
１，２１ 樹脂封止型半導体装置
２ 放熱板
３ 半導体素子搭載部
４ 半導体素子
５ 半田
６ａ，６ｂ 外部リード
７ 樹脂モールド部
８ リブ
９ ノッチ
１０，２４ 溝
１１ 取付孔
１２ 内部リード
１４ タブ
２２ 第１のコイニング部
２３ 第２のコイニング部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a structure of a heat sink on which a semiconductor element is mounted and fixed.
[0002]
[Prior art]
8A and 8B show structural examples of this type of conventional resin-encapsulated semiconductor device. That is, FIG. 8 is shown in Japanese Patent Publication No. 7-44247. In the resin-encapsulated semiconductor device 1, the semiconductor element 4 is fixed by the solder 5 on the semiconductor element mounting portion 3 that contacts the upper surface of the heat sink 2. The semiconductor element 1 and the external lead 6a are electrically connected via the internal lead 12, and the semiconductor element 1 and a part of the external lead 6a and a part of the external lead 6b extending from the heat sink 2 are sealed with resin. This is a semiconductor device in which the resin mold part 7 is formed by being stopped.
[0003]
In the above structural example, the heat sink 2 is a boundary region between a portion where the heat sink 2 is incorporated in the resin mold portion 7 and a portion where the heat sink 2 is not, and on one side of the heat sink 2 on both sides in the lateral direction as viewed from the longitudinal direction. It has a pair of notches 9 facing each other formed by cutting out the part in a U-shape and at least one groove 10 connecting the notches 9.
Further, in the above structural example, in order to facilitate the coupling with the resin mold portion 7, a rib 8 is provided on the outer peripheral edge of the semiconductor element mounting portion 3 so as to project outward.
[0004]
[Problems to be solved by the invention]
Since the conventional resin-encapsulated semiconductor device is configured as described above, there are the following problems to be solved.
(1) When the resin-encapsulated semiconductor device 1 is attached to an external member such as a circuit board using the screw attachment hole 9 formed in the tab 14 at the tip of the heat sink 2, solder is placed on the semiconductor element placement portion 3 Mechanical stress applied to the fixed semiconductor element 4 is relaxed by the groove 10 and the notch 9.
However, since the notch 9 is formed by notching the edges of the heat sink 2, the effective area of the heat sink 2 is reduced by the area occupied by the pair of notches 9, and the heat generated during the function of the semiconductor element 4 is dissipated. As a result, the efficiency is hindered.
[0005]
(2) The mechanical coupling between the resin mold portion 7 and the heat sink 2 is reinforced by the notches 9 and the grooves 10 connecting the notches 9 together with the ribs 8 provided on the outer peripheral edge of the heat sink 2.
However, the notch 9 is provided only at the boundary region between the portion where the heat sink 2 is incorporated in the resin mold portion 7 and the portion where the heat sink 2 is not, and the length of the groove 10 is also limited to the length connecting the notches 9. Therefore, the distance is relatively shortened, and it is not yet a sufficient measure to obtain a sufficient mechanical connection between the resin mold portion 7 and the heat radiating plate 2.
[0006]
(3) Since mechanical coupling is still insufficient due to the above (2), moisture permeates from an insufficiently bonded boundary between the resin mold part 7 and the heat sink 2, and the moisture resistance characteristics of the semiconductor element 4 are deteriorated. There is a risk of causing.
[0007]
The present invention has been made to solve the above-described problems, and (1) without using a notch, while effectively reducing the mechanical and thermal stress, effectively using the area occupied by the heat sink, Improving the heat dissipation efficiency of the heat generated during the function of the semiconductor element, (2) further strengthening the mechanical coupling between the resin mold part and the heat sink, and (3) the resin mold part and the heat sink. It is intended to provide a resin-encapsulated semiconductor device for the purpose of improving the adhesiveness of the semiconductor element and improving the moisture resistance of the semiconductor element.
[0008]
[Means for Solving the Problems]
According to the first aspect of the present invention, a semiconductor element is fixed onto the semiconductor element mounting portion of the heat sink, and the semiconductor element and the first external lead are electrically connected via the internal lead, and the semiconductor A resin-encapsulated semiconductor device in which an element, a part of the first external lead, and a part of a second external lead extending from the heat sink are resin-sealed to form a resin mold part. And providing a first protrusion and a second protrusion on the outer peripheral edge of the heat sink, such that the upper surface of the first protrusion is lower than the upper surface of the heat sink, and The upper surface of the second protrusion is lower than the upper surface of the first protrusion, and the area of the upper surface of the second protrusion is smaller than the area of the upper surface of the first protrusion. The first protrusion and the Forming a second projecting portion, further, the resin-sealed semiconductor device which is characterized in that a groove of at least one strip extending over between the two second projecting portions are provided.
[0010]
In resin-encapsulated semiconductor device according to claim 1, the outer peripheral edge of the heat radiating plate, and the first protruding portion, and a second protruding portion, and, between the two second projecting portions Since at least one groove is provided to straddle, heat generated during the function of the semiconductor element is dissipated while the mechanical stress and thermal stress applied when the resin-encapsulated semiconductor device is screwed to the external member are alleviated. Therefore, a sufficient heat radiation area can be ensured without impairing the effective area.
[0011]
In particular, since there is provided at least one strip groove spans between the two second projecting portions, screwed to the outer member through a mounting hole in which a resin sealed semiconductor device to tab of the distal end portion of the heat radiating plate In this case, even if there is a problem in the flatness of the peripheral edge of the mounting hole of the external member or the heat sink, mechanical stress is absorbed by the groove and the semiconductor element is not adversely affected.
[0012]
Specifically, in the resin-encapsulated semiconductor device according to claim 1, since the upper surface of the second protruding portion is relatively lower than the upper surface of the first protruding portion, the upper surface of the second protruding portion. Compared with the case where the height of the first protrusion is equal to the height of the upper surface of the first protruding portion, the adhesion area with the sealing resin is increased, and the mechanical coupling between the resin and the metal heat sink is enhanced.
[0013]
【Example】
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 shows a first embodiment of the present invention. FIG. 1A is a plan view showing a part of a resin-encapsulated semiconductor device, and FIG. 1B is a side view thereof.
In these drawings, the resin-encapsulated semiconductor device 21 according to the present invention has a semiconductor element 4 mounted on a semiconductor element mounting portion 3 of a heat sink 2 formed of a series of lead frames by solder 5 as in the conventional structure. The semiconductor element 4 and the external lead 6 a are electrically connected by the internal lead 12. A part of the semiconductor element 4, the external lead 6 a and the central external lead 6 b extending from the heat sink 2 are sealed with resin to form a resin mold portion 7.
[0014]
Then, provided on the outer peripheral edge portion of the heat radiating plate 2, the first protruding portion 22 (hereinafter, referred to. The first coining portion), a second protruding portion 23 (hereinafter, referred to as a second coining portion.) And is Thus, the first coining portion 22 and the second coining portion 23 are formed so that the upper surface of the second coining portion 23 is lower than the upper surface of the first coining portion 22. These shapes of the first coining portion 22 and the second coining portion 23 is not particularly limited, for example, FIG. 2 (a), the outward from the outer periphery of the heat radiating plate 2 as shown in (b) coronoid It has a shape protruding into a shape. 2A is a cross-sectional view taken along line XX in FIG. 1A, and FIG. 2B is a cross-sectional view taken along line YY in FIG.
[0015]
Further, at least one groove 24 straddling the second coining portion 23 (a pair of left and right in FIG. 1) is provided. The number of the grooves 24 is not limited, and there are various methods for engaging the second coining portion 23, such as those shown in FIGS. 3 (a), 3 (b), and 3 (c). There is a way of hanging or straddling. Of course, these are not particularly limited.
[0016]
As for the shape of the groove 24, for example, as shown in FIGS. 4A to 4D, a U-shaped groove (a), a V-shaped groove (b), a U-shaped groove (c), two stages Various shapes such as the groove (d) are conceivable. 5 shows various planar arrangement shapes of the groove 24, (a) is a shape bent in a crank shape with respect to the second coining portions 23 at both ends, and (b) is an arc shape. , (c) is a shape connecting the second coining portion 23 provided on the second coining portion 23 and the side edge portions provided with respect to the front edge obliquely, (d) is, (c ) and shows between the second coining 23 which are connected by the groove 24 of the L-shaped arranged similarly. However, the planar arrangement shape of the groove 24 is not particularly limited.
[0017]
Next, FIG. 6 shows a second embodiment of the present invention. In this embodiment, as shown in the figure, the second coining portions 23 are provided in total at four locations adjacent to both longitudinal ends of the first coining portion 22 and are opposed to each other in the width direction. it is obtained by forming a two-stage groove 24 having different depths so as to straddle between the parts 23. As shown in FIG. 7 as an enlarged view of the portion A in FIG. 6B , the groove 24 has a relatively shallow depth and a first stage edge groove 25 having a wide mouth width and a relatively deep bottom. The second stage arc groove 26 is provided in a series.
[0018]
An example of specific dimensions of the first coining portion 22 and the second coining portion 23 is as follows. In FIG. 7, t1 = 1.3 mm, t2 = 0.65 mm, and t3 = 0.3 mm. As can be seen from this dimension example, the depth t3 of the first coining portion 22 is about ¼ of the plate thickness t1 of the heat sink 2, and the depth t2 of the second coining portion 23 is The depth is about ½ of the thickness t1 of the heat radiating plate 2, but these depths are appropriately designed depending on the length of the first coining portion 22 and the second coining portion 23, the number of coining portions to be formed, and the like. Is.
[0019]
【The invention's effect】
Since the present invention is configured as described above, the following effects can be obtained.
(1) and the first and second coining part, by the synergistic effect of the formation of grooves spanning between the two second coining portion of the circuit board or the like of the resin-encapsulated semiconductor device by using a screw mounting hole When mounting on an external member, or when imposing a resin-encapsulated semiconductor device on an external member such as a circuit board using solder or the like, mechanical stress applied to the semiconductor element and heat during the function of the semiconductor element Stress can be relaxed.
(2) Effective as a heat sink because the coining part protruding outward is formed without having a notch formed by partially cutting the edge of the heat sink as in the conventional structure. The area can be used effectively, and the heat dissipation efficiency of the heat generated during the function of the semiconductor element can be improved.
(3) coining portion and a second coining portion different first height upper surface provided, and since the formation of the groove straddling between the two second coining portion, the adhesion area increases, the resin mold portion The mechanical coupling between the heat sink and the heat sink can be made even stronger.
(4) As a result of improving the adhesiveness between the resin mold part and the heat sink from (3) above, the moisture resistance characteristics of the semiconductor element can be improved.
[Brief description of the drawings]
1A and 1B show a resin-encapsulated semiconductor device according to a first embodiment of the present invention, in which FIG. 1A is a plan view and FIG. 1B is a side view thereof.
2A is an enlarged cross-sectional view taken along line XX in FIG. 1A, and FIG. 2B is an enlarged cross-sectional view taken along line YY in FIG.
FIGS. 3A, 3B, and 3C are perspective views illustrating an example of a method of straddling a groove that straddles a second coining portion. FIG.
FIGS. 4A, 4B, 4C, and 4D are cross-sectional views showing examples of the cross-sectional shape of the groove.
FIGS. 5A, 5B, 5C and 5D are plan views showing examples of the planar shape of the groove.
6A and 6B show a resin-encapsulated semiconductor device according to a second embodiment of the present invention, in which FIG. 6A is a plan view and FIG. 6B is a side view thereof.
FIG. 7 is an enlarged view of a part A in FIG. 6 (b).
8A and 8B show a structural example of a conventional resin-encapsulated semiconductor device of this type, where FIG. 8A is a plan view and FIG. 8B is a side view thereof.
[Explanation of symbols]
1, 21 Resin-sealed semiconductor device 2 Heat sink 3 Semiconductor element mounting part 4 Semiconductor element 5 Solder 6a, 6b External lead 7 Resin mold part 8 Rib 9 Notch 10, 24 Groove 11 Mounting hole 12 Internal lead 14 Tab 22 First Coining part 23 The second coining part

Claims (1)

放熱板の半導体素子搭載部上に半導体素子が固着され、前記半導体素子と第１の外部リードとが内部リードを介して電気的に導通され、前記半導体素子と前記第１の外部リードの一部と前記放熱板から延びている第２の外部リードの一部とが樹脂封止されて樹脂モールド部が形成された樹脂封止型半導体装置であって、前記放熱板の外周縁部に第１の突き出し部と、第２の突き出し部とを設けると共に、前記第１の突き出し部の上面が前記放熱板の上面よりも低くなるように、かつ、前記第２の突き出し部の上面が前記第１の突き出し部の上面よりも低くなるように、かつ、前記第２の突き出し部の上面の面積が前記第１の突き出し部の上面の面積よりも小さくなるように、前記第１の突き出し部および前記第２の突き出し部を形成し、更に、２つの第２の突き出し部の間に跨る少なくとも１条の溝を設けたことを特徴とする樹脂封止型半導体装置。A semiconductor element is fixed on the semiconductor element mounting portion of the heat sink, and the semiconductor element and the first external lead are electrically connected to each other through an internal lead. The semiconductor element and a part of the first external lead wherein a portion of the second external lead extending from the heat radiating plate is a resin-sealed resin-sealed semiconductor device resin-molded portion is formed with the first outer peripheral edge portion of the heat radiating plate And a second protruding portion, the upper surface of the first protruding portion is lower than the upper surface of the heat sink, and the upper surface of the second protruding portion is the first protruding portion. The first protrusion and the second protrusion so that the area of the upper surface of the second protrusion is smaller than the area of the upper surface of the first protrusion. Forming a second protrusion, and Resin-sealed semiconductor device which is characterized by providing at least one strip of grooves spanning between two of the second protruding portion.
JP2002073394A 2002-03-18 2002-03-18 Resin-sealed semiconductor device Expired - Fee Related JP3871587B2 (en)

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