JP3870292B2 - Etching solution composition and method for producing reflector using the same - Google Patents
Etching solution composition and method for producing reflector using the same Download PDFInfo
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Description
【０００１】
【発明の属する技術分野】
本発明は、液晶ディスプレイの反射板に使用される金属反射膜を含む積層膜のエッチング液組成物とそれを用いた反射板の製造方法に関する。
【０００２】
【従来の技術】
液晶ディスプレイとして、消費電力削減のために太陽光や室内灯によって外光が明るい場合は外光を利用する反射型液晶ディスプレイが携帯用途に注目されている。この反射型液晶ディスプレイは、外光が明るい場合はバックライトを用いなくても、液晶ディスプレイに設置されている反射板によって明るい表示を観察者に提供することができ、外光が暗い場合にはフロントライトやバックライトを用いて明るい表示を提供することができる。反射型液晶ディスプレイにバックライトを用いる場合には、反射板に半透過反射性を付与しなければならないので、反射板に形成されている反射膜を局所的にエッチング液等を用いて除去して光を透過させている。
【０００３】
反射型液晶ディスプレイの反射膜材料としては、従来、アルミニウム、アルミニウム合金が使用され、それらのエッチング液としてはりん酸−硝酸−酢酸の混酸が使用されている。また、最近では、アルミニウムより高反射率である、銀、銀合金なども注目され、携帯電話用ディスプレイを中心に採用されてきている。
【０００４】
さらに、反射型液晶ディスプレイのミラー層には、金属反射膜の反射率向上や反射光の波長特性を改善するため、金属反射層の上に屈折率の異なる（屈折率の高い層、低い層）透光層を積層するが、ＳｉＯ２層を積層させたＳｉＯ２膜を含む積層膜、例えば上層から順に、屈折率が１．７程度のＳｉＯ２膜、屈折率が２．０よりも高い高屈折率膜であるＩＴＯ（インジウム錫酸化物）膜、ＳｉＯ２膜、銀合金、ＩＴＯ膜といった積層膜は従来のエッチング液では一液で同時にエッチングし、かつ高精細にパターニングすることは極めて困難であった。すなわち、ＳｉＯ２膜はふっ化水素酸系エッチング液、ＩＴＯ膜は有機酸・無機酸系エッチング液、銀および銀合金は無機酸系エッチング液(アルミエッチング液等)を使用して、それぞれの膜をエッチングする必要があるため、エッチング工程が煩雑化し、経済的とはいえなかった（特許文献１〜４参照）。
【０００５】
【特許文献１】
特開２００１−１９２７５２号公報
【特許文献２】
特開昭６３−１８４７２６号公報
【特許文献３】
特開昭５２−１０８３５１号公報
【特許文献４】
特開２００１−７７０９８号公報
【０００６】
【発明が解決しようとする課題】
従って、本発明の課題は、上記問題点を解決したＳｉＯ２膜を含む金属反射積層膜を同時に１液でエッチングすることができ、かつ各膜のサイドエッチング量を抑制し、さらに反射光を拡散させる機能を有する樹脂層にダメージを与えない安価なエッチング液組成物を提供することにある。
【０００７】
【課題を解決するための手段】
本発明者らは上記課題を解決すべく、鋭意、検討を重ねる中で、りん酸系混酸中にＳｉＯ２膜をエッチング可能なふっ化水素酸を含有せしめることにより、かかる課題を解決できることを見出し、更に研究を進めた結果、本発明を完成するに至った。
【０００８】
すなわち、本発明は、金属反射膜およびＳｉＯ２膜を含む２層以上の膜からなる金属反射積層膜を１液で同時にエッチングするエッチング液組成物であって、りん酸、硝酸、酢酸、ふっ化水素酸および水を配合してなる、前記エッチング液組成物に関する。
さらに、本発明は、りん酸濃度が２０．０〜５０．０重量％、硝酸濃度が１．０〜５．０重量％、酢酸濃度が２０．０〜５０．０重量％およびふっ化水素酸濃度が０．０１〜０．３０重量％である、前記エッチング液組成物に関する。
また、本発明は、金属反射積層膜が、ＳｉＯ２膜／高屈折率膜／ＳｉＯ２膜／銀合金を含むことを特徴とする、前記エッチング液組成物に関する。
また、本発明は、エッチング液組成物にさらに界面活性剤を含むことを特徴とする、前記エッチング液組成物に関する。
さらに、本発明は、絶縁基板上に金属反射膜およびＳｉＯ２膜を含む２層以上の膜からなる金属反射積層膜をスパッタリング法により各々の膜を積層し、りん酸、硝酸、酢酸、ふっ化水素酸および水を配合してなるエッチング液組成物を用いて該金属反射積層膜を１液で同時にエッチングすることを含む、反射板の製造方法に関する。
また、本発明は、エッチング液組成物のりん酸濃度が２０．０〜５０．０重量％、硝酸濃度が１．０〜５．０重量％、酢酸濃度が２０．０〜５０．０重量％およびふっ化水素酸濃度が０．０１〜０．３０重量％である、前記反射板の製造方法に関する。
さらに、本発明は、絶縁基板と金属反射積層膜の間に樹脂層を形成し、金属反射積層膜が、ＳｉＯ２膜／高屈折率膜／ＳｉＯ２膜／銀合金を含む、前記反射板の製造方法に関する。
また、本発明は、界面活性剤を含む、前記エッチング液組成物を用いることを特徴とする、前記反射板の製造方法に関する
【０００９】
りん酸、硝酸、酢酸、ふっ化水素酸および水を配合させてなる本発明のエッチング液組成物を用いることで、ＳｉＯ２膜および金属反射膜を含む金属反射積層膜のエッチングを各層それぞれのエッチング液を用いることなく、１液で同時にエッチングすることができる。従って、エッチング工程を減らすことが可能となり、操作が簡便になるとともに経済的である。また、本発明のエッチング液組成物は、積層する膜に応じて配合組成比を最適化することで、驚くほどに、サイドエッチング量が抑制され、優れた形状パターンを形成しながらも、光の拡散層である樹脂層にはダメージを与えないものである。
【００１０】
【発明の実施の形態】
以下に本発明の実施の形態について詳述する。
本発明のエッチング液組成物は、金属反射膜およびＳｉＯ２膜を含む２層または３層以上の金属反射積層膜をエッチングするものであり、金属反射膜としては、銀、銀合金、アルミニウム、アルミニウム合金等が挙げられる。銀、銀合金が、高反射率であるため好ましい。
また、金属反射膜の反射率向上や反射光の波長特性を改善するため、金属反射層の上に屈折率の異なる（屈折率の高い層、低い層）透光層を積層する。積層する膜としては、例えば、屈折率が２．０よりも高い高屈折率膜が挙げられる。高屈折率膜は、銀系反射膜の反射色が黄色味を帯びるのを防止するが、例えばＩＴＯ（インジウム錫酸化物）、ＩＺＯ（インジウム亜鉛酸化物）、ＩＣＯ（インジウム−セリウム酸化物）、窒化珪素、酸化チタン等の膜が挙げられ、好ましくは、ＩＴＯ膜である。なお、本明細書においては屈折率が２．０以上の透光膜を高屈折率膜という。
金属反射積層膜の例としては、ＳｉＯ２／ＩＴＯ／Ａｇの３層膜および、多層膜としては、ＳｉＯ２／ＩＴＯ／ＳｉＯ２／ＩＴＯ／Ａｇ、ＳｉＯ２／ＩＴＯ／Ａｇ／ＩＴＯ等が挙げられ、ＳｉＯ２／窒化珪素／銀合金やさらに窒化珪素に代えて酸化チタンでもよい。また、ＡｇはＡｇ合金を含むものであってもよい。
【００１１】
本発明のエッチング液組成物は、ガラス等からなる絶縁基板上にコーティング法にて光拡散層である樹脂層を成膜した上に、スパッタリング法にてＳｉＯ２膜、金属反射膜、高屈折率膜を含む金属反射積層膜を積層し、レジストを用いてパターンニングした後、反射積層膜をエッチングすることにより、所定部分が開口部となる反射板を製造することができる。
用いられる絶縁基板としては、ガラス、プラスチック等が挙げられ、用いられる樹脂層としては、アクリル樹脂等が挙げられる。
本発明のエッチング液組成物の配合量は、好ましくはりん酸濃度が、２０．０〜５０．０重量％であり、さらに好ましくは３５．０〜４５．０重量％、硝酸の濃度が、好ましくは１．０〜５．０重量％、さらに好ましくは２．０〜３．０重量％、酢酸の濃度が好ましくは２０．０〜５０．０重量％、さらに好ましくは３０．０〜４０．０重量％、ふっ化水素酸の濃度が、好ましくは０．０１〜０．３０重量％、さらに好ましくは０．１０〜０．２５重量％である。
【００１２】
りん酸、硝酸、酢酸およびふっ化水素酸の濃度が上記範囲内であれば、エッチング速度が速すぎることなく抑制され、各層のサイドエッチングおよびエッチングむらもなく、形状が良好である。
これらの成分の配合組成は、積層膜に応じて適宜変更し、最適化を行うが、上記範囲の組成物は、特に、金属反射膜として、銀、銀合金を用い、屈折率が２．０以上の高屈折率膜を含む積層膜に対して、好適に用いることができる。
また、本発明のエッチング液組成物には、エッチングを行なう面に対するぬれ性を改善するため、さらに界面活性剤を含んでもよい。界面活性剤は、アニオン系またはノニオン系が好ましく、さらに好ましくはアニオン系界面活性剤である。
アニオン系界面活性剤としては、ふっ素系界面活性剤としてフタージェント１１０（株式会社ネオス）、ＥＦ−１０４（三菱マテリアル株式会社）、非ふっ素系界面活性剤としてパーソフトＳＦ−Ｔ（日本油脂株式会社）等があげられる。また、ノニオン系界面活性剤としては、ふっ素系界面活性剤としてＥＦ−１２２Ａ（三菱マテリアル株式会社）、非ふっ素系界面活性剤としてフタージェント250（株式会社ネオス）等があげられる。
【００１３】
また、本発明に係るエッチング液組成物に使用する薬液は、りん酸、硝酸、酢酸およびふっ化水素酸であり、一般に半導体用薬品として広く用いられており、高純度な製品が安価で入手できるものである。そのため、薬液中の不純物によるデバイスの汚染の心配もなく、なおかつ、低コストであるというメリットがある。
本発明のエッチング液組成物のエッチング温度は、積層した各単膜のエッチングレートの差が開きすぎない条件として、３０〜４０℃で行うのが好ましい。
【００１４】
【実施例】
以下に、実施例と比較例を挙げて本発明を更に詳細に説明するが、本発明はこれら実施例に限定されるものでない。
［実施例１〜７］
図１（ａ）に示すように、ガラス等からなる絶縁基板上に光拡散層である樹脂層をコーティング法により成膜する。この上にスパッタリング法により屈折率が１．７であるＳｉＯ２膜／屈折率が２．１であるＩＴＯ膜／ＳｉＯ２膜／銀合金／ＩＴＯ膜からなる反射層を成膜した基板を準備した。
従来、光を反射することのできる金属膜(アルミニウム等)を絶縁基板上に形成していたが、凹凸形状がないため、鏡と同様に光をきれいに反射してしまい、本来のディスプレイ表示が見づらくなっていた。これを防ぐため、図１に示すように絶縁基板に樹脂層を成膜し、凹凸形状を設けることにより、適度な光の拡散効果を与え、ディスプレイ表示を見やすくする。
【００１５】
次に、基板を図１（ｂ）に示すように、レジストを用いてパターニングし、表１の実施例１〜７のエッチング液に浸漬した(エッチング温度４０℃)。その後、超純水で洗浄し、窒素ブローで乾燥後、ミラー層のエッチング時間を測定し、基板形状を光学顕微鏡にて観察した。結果を表１に示す。
【００１６】
［比較例１〜３］
実施例で用いたガラス基板上にスパッタリング法によって形成されたＳｉＯ２膜／ＩＴＯ膜／ＳｉＯ２膜／銀合金／ＩＴＯ膜／樹脂層を表１の比較例１〜３の各成分からなるエッチング液に浸漬し、実施例と同様にして処理を行った。結果を表１に併せて示す。
ここでエッチング液の調製には、８５重量％りん酸、９９重量％酢酸、７０重量％硝酸、５０重量％ふっ化水素酸および水を用いており、表１の実施例、比較例におけるエッチング液組成（重量％）の数値は用いた酸各々の１００％換算値である。
【００１７】
【表１】
表１から明らかに、本発明のエッチング液組成物を用いてエッチングすることにより、スパッタリング法によって形成されたＳｉＯ２膜／ＩＴＯ膜／ＳｉＯ２膜／銀合金／ＩＴＯ膜を光拡散層である樹脂層にダメージなく一括でエッチングすることができた。エッチング速度も抑制され、パターン形状も良好であった。
【００１９】
【発明の効果】
本発明のエッチング液組成物を使用することにより、各層それぞれのエッチング液を使用せずに１液で、金属反射膜およびＳｉＯ２膜を含む積層膜を光拡散層である樹脂層にダメージを与えることなくエッチングすることができ、かつ、ミラー層のサイドエッチングを抑制しパターン形状が良好な反射板を製造することができる。
【図面の簡単な説明】
【図１】 絶縁基板上にＳｉＯ２膜を含む金属反射積層膜を積層した後、エッチング液を用いてエッチングする工程を示す図である。
【符号の説明】
１ ＩＴＯ膜
２ ＳｉＯ２膜
３ 銀合金[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an etching solution composition for a laminated film including a metal reflection film used for a reflection plate of a liquid crystal display, and a method for producing a reflection plate using the same.
[0002]
[Prior art]
As a liquid crystal display, when external light is bright due to sunlight or room light in order to reduce power consumption, a reflective liquid crystal display that uses external light is attracting attention for portable use. This reflective liquid crystal display can provide a bright display to the observer by a reflector installed in the liquid crystal display without using a backlight when the external light is bright, and when the external light is dark Bright display can be provided by using a front light or a backlight. When using a backlight in a reflective liquid crystal display, the reflective plate must be given transflective properties, so the reflective film formed on the reflective plate must be removed locally using an etchant or the like. Light is transmitted.
[0003]
Conventionally, aluminum or an aluminum alloy is used as a reflective film material of a reflective liquid crystal display, and a mixed acid of phosphoric acid-nitric acid-acetic acid is used as an etching solution thereof. Recently, silver, silver alloy, and the like, which have a higher reflectance than aluminum, have attracted attention and have been adopted mainly for mobile phone displays.
[0004]
Furthermore, the mirror layer of the reflective liquid crystal display has a different refractive index on the metallic reflective layer (a layer with a high refractive index and a layer with a low refractive index) in order to improve the reflectance of the metallic reflective film and improve the wavelength characteristics of the reflected light. While laminating the transparent layer, laminated film including a SiO 2 film obtained by laminating an SiO 2 layer, in order for example from the upper layer, the refractive index of 1.7 of about SiO 2 film, higher elevation than the refractive index is 2.0 A laminated film such as an ITO (indium tin oxide) film, a SiO 2 film, a silver alloy, or an ITO film, which is a refractive index film, is etched with a conventional etching solution at the same time, and it is extremely difficult to pattern with high definition. there were. That is, a hydrofluoric acid etching solution is used for the SiO 2 film, an organic acid / inorganic acid etching solution is used for the ITO film, and an inorganic acid etching solution (aluminum etching solution, etc.) is used for silver and silver alloys. Therefore, the etching process is complicated and not economical (see Patent Documents 1 to 4).
[0005]
[Patent Document 1]
JP 2001-192752 A [Patent Document 2]
JP-A 63-184726 [Patent Document 3]
JP-A-52-108351 [Patent Document 4]
Japanese Patent Laid-Open No. 2001-77098
[Problems to be solved by the invention]
Accordingly, an object of the present invention is to simultaneously etch a metal reflective laminated film including a SiO 2 film, which solves the above-mentioned problems, with one liquid, and suppresses the side etching amount of each film, and further diffuses reflected light. Another object of the present invention is to provide an inexpensive etchant composition that does not damage the resin layer having the function of causing the resin layer to function.
[0007]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the present inventors have intensively studied and found that such problems can be solved by incorporating hydrofluoric acid capable of etching the SiO 2 film into the phosphoric acid-based mixed acid. As a result of further research, the present invention has been completed.
[0008]
That is, the present invention relates to an etching solution composition for simultaneously etching a metal reflective laminated film composed of two or more layers including a metal reflective film and a SiO 2 film with one liquid, which comprises phosphoric acid, nitric acid, acetic acid, fluoride. It is related with the said etching liquid composition formed by mix | blending a hydrogen acid and water.
Furthermore, the present invention provides a phosphoric acid concentration of 20.0-50.0% by weight, a nitric acid concentration of 1.0-5.0% by weight, an acetic acid concentration of 20.0-50.0% by weight, and hydrofluoric acid. It is related with the said etching liquid composition whose density | concentration is 0.01-0.30 weight%.
In addition, the present invention relates to the etching solution composition, wherein the metal reflective laminated film includes SiO 2 film / high refractive index film / SiO 2 film / silver alloy.
Moreover, this invention relates to the said etching liquid composition characterized by including surfactant further in an etching liquid composition.
Furthermore, the present invention provides a method of depositing each of a metal reflective laminated film comprising two or more layers including a metal reflective film and an SiO 2 film on an insulating substrate by sputtering, and phosphoric acid, nitric acid, acetic acid, fluoride. The present invention relates to a method for producing a reflector, which comprises simultaneously etching the metal reflective laminated film with one liquid using an etching liquid composition obtained by blending hydrogen acid and water.
In the present invention, the phosphoric acid concentration of the etching solution composition is 20.0 to 50.0% by weight, the nitric acid concentration is 1.0 to 5.0% by weight, and the acetic acid concentration is 20.0 to 50.0% by weight. And a hydrofluoric acid concentration of 0.01 to 0.30% by weight.
Furthermore, the present invention provides a resin layer formed between an insulating substrate and a metal reflective multilayer film, wherein the metal reflective multilayer film includes SiO 2 film / high refractive index film / SiO 2 film / silver alloy. It relates to a manufacturing method.
The present invention also relates to a method for producing the reflector, characterized in that the etching solution composition containing a surfactant is used.
By using the etching solution composition of the present invention containing phosphoric acid, nitric acid, acetic acid, hydrofluoric acid and water, etching of the metal reflective laminated film including the SiO 2 film and the metal reflective film is performed for each layer. Etching can be performed simultaneously with one liquid without using any liquid. Therefore, it is possible to reduce the etching process, and the operation is simple and economical. In addition, the etching composition of the present invention is surprisingly capable of reducing the amount of side etching by optimizing the composition ratio according to the film to be laminated, while forming an excellent shape pattern, The resin layer as the diffusion layer is not damaged.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail.
The etching solution composition of the present invention is for etching a metal reflective laminated film including two or three layers including a metal reflective film and a SiO 2 film. Examples of the metal reflective film include silver, silver alloy, aluminum, aluminum An alloy etc. are mentioned. Silver and a silver alloy are preferable because of high reflectivity.
Further, in order to improve the reflectance of the metal reflection film and the wavelength characteristics of the reflected light, a light-transmitting layer having a different refractive index (a layer having a high refractive index and a layer having a low refractive index) is laminated on the metal reflection layer. Examples of the laminated film include a high refractive index film having a refractive index higher than 2.0. The high refractive index film prevents the reflection color of the silver-based reflective film from becoming yellowish. For example, ITO (indium tin oxide), IZO (indium zinc oxide), ICO (indium-cerium oxide), Examples of the film include silicon nitride and titanium oxide, and an ITO film is preferable. In the present specification, a light-transmitting film having a refractive index of 2.0 or more is referred to as a high refractive index film.
Examples of the metal reflective laminated film include a SiO 2 / ITO / Ag three-layer film, and examples of the multilayer film include SiO 2 / ITO / SiO 2 / ITO / Ag, SiO 2 / ITO / Ag / ITO, and the like. SiO 2 / silicon nitride / silver alloy or titanium oxide may be used instead of silicon nitride. Ag may contain an Ag alloy.
[0011]
The etching solution composition of the present invention is obtained by forming a resin layer, which is a light diffusion layer, on an insulating substrate made of glass or the like by a coating method, and then forming a SiO 2 film, a metal reflective film, or a high refractive index by a sputtering method. A reflective plate having a predetermined portion as an opening can be manufactured by laminating a metal reflective multilayer film including a film, patterning with a resist, and then etching the reflective multilayer film.
Examples of the insulating substrate used include glass and plastic, and examples of the resin layer used include acrylic resin.
The amount of the etching solution composition of the present invention is preferably such that the phosphoric acid concentration is 20.0 to 50.0% by weight, more preferably 35.0 to 45.0% by weight, and the nitric acid concentration is preferably Is 1.0 to 5.0% by weight, more preferably 2.0 to 3.0% by weight, and the concentration of acetic acid is preferably 20.0 to 50.0% by weight, more preferably 30.0 to 40.0%. The concentration of wt% and hydrofluoric acid is preferably 0.01 to 0.30 wt%, more preferably 0.10 to 0.25 wt%.
[0012]
When the concentrations of phosphoric acid, nitric acid, acetic acid and hydrofluoric acid are within the above ranges, the etching rate is suppressed without being too fast, and there is no side etching and uneven etching of each layer, and the shape is good.
The compounding composition of these components is appropriately changed and optimized according to the laminated film, but the composition in the above range uses, in particular, silver or a silver alloy as the metal reflecting film and has a refractive index of 2.0. It can be suitably used for a laminated film including the above high refractive index film.
The etching solution composition of the present invention may further contain a surfactant in order to improve the wettability with respect to the surface to be etched. The surfactant is preferably anionic or nonionic, and more preferably an anionic surfactant.
As anionic surfactants, Fluorent-based surfactants such as Footent 110 (Neos Co., Ltd.) and EF-104 (Mitsubishi Materials Corporation), and non-fluorinated surfactants as Persoft SF-T (Nippon Yushi Co., Ltd.) ) Etc. Examples of the nonionic surfactant include EF-122A (Mitsubishi Materials Corporation) as a fluorine-based surfactant, and Footgent 250 (Neos Corporation) as a non-fluorine-based surfactant.
[0013]
The chemicals used in the etching solution composition according to the present invention are phosphoric acid, nitric acid, acetic acid and hydrofluoric acid, and are generally widely used as semiconductor chemicals, and high-purity products can be obtained at low cost. Is. Therefore, there is an advantage that there is no concern about contamination of the device due to impurities in the chemical solution, and the cost is low.
The etching temperature of the etching solution composition of the present invention is preferably carried out at 30 to 40 ° C. as a condition that the difference in etching rate between the laminated single films is not too large.
[0014]
【Example】
Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to these Examples.
[Examples 1 to 7]
As shown in FIG. 1A, a resin layer, which is a light diffusion layer, is formed on an insulating substrate made of glass or the like by a coating method. Refractive indices providing a substrate having a reflective layer is formed of ITO film / SiO 2 film / silver alloy / ITO film is SiO 2 film / refractive index 2.1 of 1.7 by sputtering on this .
Conventionally, a metal film (such as aluminum) that can reflect light has been formed on an insulating substrate, but because there is no uneven shape, it reflects light neatly like a mirror, making it difficult to see the original display. It was. In order to prevent this, a resin layer is formed on the insulating substrate as shown in FIG. 1 and an uneven shape is provided, thereby providing an appropriate light diffusion effect and making the display display easier to see.
[0015]
Next, as shown in FIG.1 (b), the board | substrate was patterned using the resist, and it immersed in the etching liquid of Examples 1-7 of Table 1 (etching temperature 40 degreeC). Thereafter, the substrate was washed with ultrapure water, dried with nitrogen blow, the etching time of the mirror layer was measured, and the substrate shape was observed with an optical microscope. The results are shown in Table 1.
[0016]
[Comparative Examples 1-3]
Etching solution comprising SiO 2 film / ITO film / SiO 2 film / silver alloy / ITO film / resin layer formed by sputtering on the glass substrate used in the examples, comprising the components of Comparative Examples 1 to 3 in Table 1. And was treated in the same manner as in the example. The results are also shown in Table 1.
Here, 85 wt% phosphoric acid, 99 wt% acetic acid, 70 wt% nitric acid, 50 wt% hydrofluoric acid and water were used for the preparation of the etching solution, and the etching solutions in the examples and comparative examples in Table 1 were used. The numerical value of the composition (% by weight) is a 100% conversion value of each acid used.
[0017]
[Table 1]
As is apparent from Table 1, the SiO 2 film / ITO film / SiO 2 film / silver alloy / ITO film formed by the sputtering method by etching using the etching solution composition of the present invention is a light diffusion layer resin. It was possible to etch all layers without damage. The etching rate was also suppressed and the pattern shape was good.
[0019]
【The invention's effect】
By using the etching solution composition of the present invention, the laminated film including the metal reflective film and the SiO 2 film is damaged to the resin layer as the light diffusion layer with one solution without using the etching solution of each layer. It is possible to manufacture a reflector plate that can be etched without any problem and that suppresses side etching of the mirror layer and has a good pattern shape.
[Brief description of the drawings]
FIG. 1 is a diagram showing a step of etching using an etchant after laminating a metal reflective laminated film including a SiO 2 film on an insulating substrate.
[Explanation of symbols]
1 ITO film 2 SiO 2 film 3 Silver alloy
Claims (4)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002357724A JP3870292B2 (en) | 2002-12-10 | 2002-12-10 | Etching solution composition and method for producing reflector using the same |
| CNB2003101201565A CN1325697C (en) | 2002-12-10 | 2003-12-09 | Etching agent composition and method for producing reflective plate using the same etching liquid composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002357724A JP3870292B2 (en) | 2002-12-10 | 2002-12-10 | Etching solution composition and method for producing reflector using the same |
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| JP2004190076A JP2004190076A (en) | 2004-07-08 |
| JP3870292B2 true JP3870292B2 (en) | 2007-01-17 |
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| CN (1) | CN1325697C (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4428995B2 (en) * | 2003-12-03 | 2010-03-10 | 関東化学株式会社 | Etching solution composition for metal film |
| KR100608386B1 (en) * | 2005-06-30 | 2006-08-08 | 주식회사 하이닉스반도체 | Method of manufacturing semiconductor device |
| TW200710471A (en) * | 2005-07-20 | 2007-03-16 | Samsung Electronics Co Ltd | Array substrate for display device |
| CN1869284B (en) * | 2006-04-06 | 2010-08-04 | 株洲南车时代电气股份有限公司 | Chemical grooving technical process and device using rotation corrosion liquid spraying method |
| DE602006014551D1 (en) * | 2006-10-31 | 2010-07-08 | Soitec Silicon On Insulator | Method for characterization of defects on silicon surfaces, etching solution for silicon surfaces and methods for treating silicon surfaces with the etching solution |
| EP1926132A1 (en) * | 2006-11-23 | 2008-05-28 | S.O.I.Tec Silicon on Insulator Technologies | Chromium-free etching solution for Si-substrates and SiGe-substrates, method for revealing defects using the etching solution and process for treating Si-substrates and SiGe-substrates using the etching solution |
| KR101402189B1 (en) * | 2007-06-22 | 2014-06-02 | 삼성전자주식회사 | Oxide thin film transistor and etchant of Zn oxide |
| CN107587135A (en) * | 2016-07-08 | 2018-01-16 | 深圳新宙邦科技股份有限公司 | A kind of molybdenum aluminium-molybdenum etching liquid |
| US10870799B2 (en) | 2017-08-25 | 2020-12-22 | Versum Materials Us, Llc | Etching solution for selectively removing tantalum nitride over titanium nitride during manufacture of a semiconductor device |
| CN109554711A (en) * | 2019-01-31 | 2019-04-02 | 武汉华星光电半导体显示技术有限公司 | Etchant |
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| SU1089465A1 (en) * | 1982-11-29 | 1984-04-30 | Государственный ордена Октябрьской Революции научно-исследовательский и проектный институт редкометаллической промышленности | Chemical etching reagent |
| JPS6041770A (en) * | 1983-08-17 | 1985-03-05 | Hitachi Ltd | Fuel cell system |
| JPS62211391A (en) * | 1986-03-12 | 1987-09-17 | Nippon Telegr & Teleph Corp <Ntt> | Etching solution composition for al-si film |
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| JP2004190076A (en) | 2004-07-08 |
| CN1325697C (en) | 2007-07-11 |
| CN1506495A (en) | 2004-06-23 |
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